CN106249934B - Touch control display apparatus - Google Patents
Touch control display apparatus Download PDFInfo
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- CN106249934B CN106249934B CN201510859102.3A CN201510859102A CN106249934B CN 106249934 B CN106249934 B CN 106249934B CN 201510859102 A CN201510859102 A CN 201510859102A CN 106249934 B CN106249934 B CN 106249934B
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- insulating layer
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- shading region
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Classifications
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/13338—Input devices, e.g. touch panels
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
Abstract
The present invention discloses a kind of touch control display apparatus, comprising: first substrate has an at least pixel unit, and pixel unit includes non-shading region and shading region and includes: transistor is set on first substrate；First insulating layer is set to first substrate and is located on transistor；Touching signals line is set on the first insulating layer；Second insulating layer is set on the first insulating layer and on touching signals line, and wherein there is second insulating layer recess to correspond to non-shading region；And first electrode, it is set in second insulating layer and in recess；The second substrate, opposite first substrate are arranged；And display medium, it is set between first substrate and the second substrate.
Description
Technical field
The present invention relates to a kind of display devices, and more particularly to a kind of display device of embedded touch.
Background technique
With scientific and technological continuous progress so that various information equipments are constantly weeded out the old and bring forth the new, such as mobile phone, tablet computer,
Ultra-thin pen electricity and satellite navigation etc..Other than generally inputting or manipulating with keyboard or mouse, grasped using touch technology
Controlling information equipment is a kind of suitable intuition and welcome control mode.Wherein, touch control display apparatus has hommization and intuition
The input operation interface of change, so that the user of any age level can directly be chosen with finger or stylus or manipulation information is set
It is standby.
One of touch control display apparatus is in the interior of the interior setting sensing electrode of display panel (such as liquid crystal display panel)
Embedded touch-control (in cell touch) display device.However, and current embedded touch display device is not that everyway enables
People is satisfied.
Therefore, industry still needs to a kind of display device that can further promote display quality.
Summary of the invention
The embodiment of the present invention provides a kind of touch control display apparatus, comprising: and first substrate has an at least pixel unit, as
Plain unit includes non-shading region and shading region and includes: transistor is set on first substrate；First insulating layer is set to the first base
Plate and be located at transistor on；Touching signals line is set on the first insulating layer；Second insulating layer is set on the first insulating layer and touching
It controls on signal wire, wherein there is second insulating layer recess to correspond to non-shading region；And first electrode, it is set in second insulating layer and recessed
In mouthful；The second substrate, opposite first substrate are arranged；And display medium, it is set between first substrate and the second substrate.
The embodiment of the present invention also provides a kind of touch control display apparatus, comprising: and first substrate has an at least pixel unit,
Pixel unit includes non-shading region and shading region and includes: transistor is set on first substrate；First insulating layer is set to first
Substrate and be located at transistor on；First electrode is set on the first insulating layer；Second insulating layer is set on the first insulating layer and the
On one electrode；Touching signals line is set in second insulating layer；Third insulating layer, is set in second insulating layer and covering touch-control is believed
Number line, wherein third insulating layer has the first recess of corresponding non-shading region；And second electrode, it is set on third insulating layer and the
In one recess；The second substrate, opposite first substrate are arranged；And display medium, it is set between first substrate and the second substrate.
For feature and advantage of the invention can be clearer and more comprehensible, preferred embodiment is cited below particularly out, and appended by cooperation
Attached drawing is described in detail below.
Detailed description of the invention
Figure 1A is the top view of the touch control display apparatus of the embodiment of the present invention；
Figure 1B is the magnified partial view of the region 1B of Figure 1A；
The cross-sectional view that Fig. 2A is drawn for the line segment 2A-2A ' along Figure 1A~Figure 1B；
The cross-sectional view that Fig. 2 B is drawn for the line segment 2B-2B ' along Figure 1A~Figure 1B；
The cross-sectional view that Fig. 2 C is drawn by another embodiment of the present invention along the line segment 2A-2A ' of Figure 1A~Figure 1B；
The cross-sectional view that Fig. 3 A is drawn by another embodiment of the present invention along the line segment 2A-2A ' of Figure 1A~Figure 1B；
The cross-sectional view that Fig. 3 B is drawn by another embodiment of the present invention along the line segment 2B-2B ' of Figure 1A~Figure 1B；
The cross-sectional view that Fig. 3 C is drawn by another embodiment of the present invention along the line segment 2B-2B ' of Figure 1A~Figure 1B.
Symbol description
100 display devices；
102 substrates；
104 grid lines；
105 open regions；
106 data lines；
108 pixel units；
110 transistors；
112 drain electrodes；
114 source electrodes；
The surface 114S；
116 channel regions；
118 gate electrodes；
120 touching signals lines；
The upper surface 120S；
The non-shading region 121A；
The shading region 121B；
122 first substrates；
124 gate dielectrics；
126 semiconductor layers；
128 first insulating layers；
130 second insulating layers；
The upper surface 130S；
132 openings；
134 pixel electrodes；
136 linings；
138 third insulating layers；
The upper surface 138S；
140 recesses；
142 openings；
144 common electrodes；
146 the second substrates；
148 display mediums；
150 substrates；
152 light shield layers；
154 chromatic filter layers；
156 protective layers；
158 spacers；
160 linings；
162 openings；
164 the 4th insulating layers；
The upper surface 164S；
166 openings；
168 recesses；
200 display devices；
300A display device；
300B display device；
The direction A1；
The direction A2；
T1 thickness；
T2 thickness；
T3 thickness；
T4 thickness；
T5 thickness；
2A-2A ' line segment；
2B-2B ' line segment；
The region 1B；
D1 first distance；
D2 second distance.
Specific embodiment
It elaborates below for the touch control display apparatus of the embodiment of the present invention.It is to be understood that narration below mentions
For many different embodiments or example, to implement the different patterns of the embodiment of the present invention.Specific element as described below and
Arrangement mode only simply clearly describes the embodiment of the present invention.Certainly, these only to illustrate rather than the limit of the embodiment of the present invention
It is fixed.In addition, duplicate label or mark may be used in different embodiments.These repeat simply clearly to describe this
Inventive embodiments, not representing has any relevance between the different embodiments and/or structure discussed.Furthermore when addressing one
First material layer be located in a second material layer or on when, the feelings that are directly contacted including first material layer with second material layer
Shape.Alternatively, may also between be separated with the situations of one or more other materials layers, in this case, first material layer and the second material
It may be not directly contacted between layer.
It must be it is to be understood that the element or device of attached drawing can exist with various forms known to this skilled worker.In addition,
When certain layer is in other layers or substrate "upper", it is possible to refer to that " direct " on other layers or substrate, or refers to certain layer in other layers
Or on substrate, or refer to the other layers of sandwiched between other layers or substrate.
In addition, the term of relativity, such as " lower " or " bottom " and " higher " or " top " may be used in embodiment,
To describe relativeness of the element for another element of attached drawing.It is appreciated that, if the device overturning of attached drawing made
It turns upside down, then the element described in " lower " side will be as the element in " higher " side.
Here, " about ", " about ", " on the whole " term be generally represented within the 20% of a given value or range, preferably
It is within 10%, and is more preferably within 5% or within 3% or within 2% or within 1% or within 0.5%.It gives herein
Quantity be quantity about, that is, in the case where no certain illustrated " about ", " about ", " on the whole ", can still imply " about ",
" about ", meaning " on the whole ".
It is appreciated that, although term " first ", " second ", " third " etc. can be used herein to describe various elements, group
At ingredient, region, layer and/or part, these elements, constituent, region, layer and/or part should not be limited by these terms
It is fixed, and these terms are intended merely to distinguish different elements, constituent, region, layer and/or part.Therefore, following discussion
A first element, constituent, region, layer and/or part can without departing from teachings of the present invention be referred to as one
Second element, constituent, region, layer and/or part.
Unless otherwise defined, whole term (including technology and scientific words) as used herein have with belonging to this piece invention
The normally understood identical connotation of general technology person institute.It is appreciated that these terms, such as determines in usually used dictionary
The term of justice should be interpreted to have one and the relevant technologies and background of the invention or the consistent meaning of context, without should be with
One idealization or excessively formal mode are interpreted, unless especially definition herein.
The embodiment of the present invention can cooperate attached drawing to understand together, and attached drawing of the invention is also considered as a part of invention description.
It is to be understood that attached drawing of the invention is not with actual device and the scale of element.Embodiment may be exaggerated in the accompanying drawings
Shape and thickness clearly to show feature of the invention.In addition, the structure and device in attached drawing are drawn in a schematic manner
Show, clearly to show feature of the invention.
In the present invention, the term of relativity such as "lower", "upper", "horizontal", " vertical ", " under ", " on ", " top
Portion ", " bottom " etc. should be understood orientation depicted in this section and relevant drawings.The term of this relativity merely to
Facilitate purposes of discussion, not representing device that it is described need to be manufactured or be operated with particular orientation.And about engagement, connection
Term such as " connection ", " interconnection " etc., unless defined, otherwise can refer to two structures is directly to contact, or also can refer to
Two structures and non-direct contact, wherein there is other structures to be set between this two structures.And this term about engagement, connection
It may also comprise all removable or all fixed two structures situation of two structures.
It should be noted that " substrate " word may include established element and being covered on substrate on transparent substrate below
On various film layers, side can form any desired transistor unit thereon, but here for attached drawing is simplified, only with flat
Whole substrate indicates it.In addition, " substrate surface " is to include the film layer of the top and exposure on transparent substrate, such as an insulating layer
And/or metal wire.
The embodiment of the present invention is by shortening the distance between pixel electrode and common electrode, to increase pixel electrode together
With the capacitor between electrode, and the thus display quality of lifting device.
Figure 1A~Figure 1B is the top view of the substrate 102 of the display device 100 of the embodiment of the present invention.Such as Figure 1A~Figure 1B institute
Show, substrate 102 includes the scan line (grid line) 104 extended along first direction A1, and the data intersected with this scan line 104
Line 106.In other words, this grid line 104 extends along direction A1, and on the whole vertical (perpendicular) or orthogonal
(orthogonal) direction of this scan line (grid line) extending direction A1 is direction A2.In addition, substrate 102 further includes corresponding every
The thin film transistor (TFT) 110 of one pixel unit 108 (such as sub-pixel 108) setting.In addition, pixel unit 108 further includes out
Mouth region 105 (corresponding subsequent non-shading region).
Above-mentioned data line 106 provides signal to sub-pixel 108 by thin film transistor (TFT) 110, and this scan line (grid line)
104 by the offer scanning pulse signal of thin film transistor (TFT) 110 to sub-pixel 108, and above-mentioned signal is cooperated to control sub-pixel together
108。
Above-mentioned thin film transistor (TFT) 110 includes drain electrode 112, source electrode 114, is set to drain electrode 112 and source electrode electricity
Channel region 116 and gate electrode 118 between pole 114.This 118 self-scanning line 104 of gate electrode prolongs second direction A2 extension
And go out, and this drain electrode 112 is then the part of data line 106.
In addition, substrate 102 further includes a touching signals line 120, this touching signals line 120 on the whole with above-mentioned data line 106
It overlaps.
It is noted that not being painted subsequent pixel in above-mentioned Figure 1A~Figure 1B to clearly describe the embodiment of the present invention
Electrode and common electrode.
Fig. 2A is the cross-sectional view of the display device 100 of the embodiment of the present invention, which is the line segment along such as Figure 1A~Figure 1B
The cross-sectional view that 2A-2A ' is drawn.The cross-sectional view that Fig. 2 B is drawn for the line segment 2B-2B ' along Figure 1A~Figure 1B.Such as Fig. 2 B institute
Showing, substrate 102 (or pixel unit 108) has a non-shading region 121A (open region 105 of corresponding diagram 1A) and shading region 121B,
Non- shading region refers to light shield layer and the non-shelter of metal.In addition, as shown in Figure 2 A, substrate 102 may include a first substrate 122, this
First substrate 122 may include transparent substrate, for example, glass substrate, ceramic substrate, plastic substrate or other any suitable bases
Plate.And thin film transistor (TFT) 110 includes the gate electrode 118 on this first substrate 122, and be set to gate electrode 118 and
Gate dielectric 124 on first substrate 122.
This gate electrode 118 can be amorphous silicon, compound crystal silicon, one or more metals, metal nitride, conductive metal oxide
Object or combinations of the above.Above-mentioned metal may include but be not limited to molybdenum (molybdenum), tungsten (tungsten), titanium
(titanium), tantalum (tantalum), platinum (platinum) or hafnium (hafnium).Above-mentioned metal nitride may include but unlimited
In molybdenum nitride (molybdenum nitride), tungsten nitride (tungsten nitride), titanium nitride (titanium
) and tantalum nitride (tantalum nitride) nitride.Above-mentioned conductive metal oxide may include but be not limited to ruthenium metal oxygen
Compound (ruthenium oxide) and indium tin oxide (indium tin oxide).This gate electrode 118 can pass through
Chemical vapour deposition technique (CVD) above-mentioned, sputtering method, resistive heating evaporation, e-beam evaporation or other any suitable
Depositional mode is formed, for example, in one embodiment, can be sunk between 525~650 DEG C with Low Pressure Chemical Vapor Deposition (LPCVD)
Long-pending and obtained amorphous silicon conductive material layer or compound crystal silicon conductive material layer, thickness range can be aboutTo about
This gate dielectric 124 can for silica, silicon nitride, silicon oxynitride, high dielectric constant (high-k) dielectric material,
Or other any suitable dielectric materials or combinations of the above.The material of this high dielectric constant (high-k) dielectric material can be
Metal oxide, metal nitride, metal silicide, transition metal oxide, transition metal nitride, transition metal silication
Object, the nitrogen oxides of metal, metal aluminate, zirconium silicate, zircoaluminate.For example, this high dielectric constant (high-k) dielectric
Material can be LaO, AlO, ZrO, TiO, Ta2O5、Y2O3、SrTiO3(STO)、BaTiO3(BTO)、BaZrO、HfO2、HfO3、
HfZrO、HfLaO、HfSiO、HfSiON、LaSiO、AlSiO、HfTaO、HfTiO、HfTaTiO、HfAlON、(Ba,Sr)TiO3
(BST)、Al2O3, other suitable materials other high-k dielectric materials or said combination.This gate dielectric 124 can
It is formed by chemical vapour deposition technique (CVD) or method of spin coating, this chemical vapour deposition technique may be, for example, low pressure chemical phase
Sedimentation (low pressure chemical vapor deposition, LPCVD), low temperature chemical vapor deposition method (low
Temperature chemical vapor deposition, LTCVD), be rapidly heated chemical vapour deposition technique (rapid
Thermal chemical vapor deposition, RTCVD), plasma auxiliary chemical vapor deposition method (plasma
Enhanced chemical vapor deposition, PECVD), the atomic layer deposition method of atomic layer chemical vapor deposition method
(atomic layer deposition, ALD) or other common methods.
Thin film transistor (TFT) 110 further includes the semiconductor layer 126 on gate dielectric 124, this semiconductor layer 126 and grid
Pole electrode 118 is overlapped, and above-mentioned drain electrode 112 and source electrode 114 are respectively arranged on the two sides of semiconductor layer 126, and respectively
With partly overlapping for 126 two sides of semiconductor layer.
This semiconductor layer 126 may include elemental semiconductor, including silicon, germanium (germanium)；Compound semiconductor, including
Gallium nitride (gallium nitride, GaN), silicon carbide (silicon carbide), GaAs (gallium arsenide),
Gallium phosphide (gallium phosphide), indium phosphide (indium phosphide), indium arsenide (indium arsenide) and/
Or indium antimonide (indium antimonide)；Alloy semiconductor, including sige alloy (SiGe), phosphorus arsenic gallium alloy (GaAsP),
Arsenic aluminium indium alloy (AlInAs), arsenic aluminum gallium alloy (AlGaAs), arsenic indium gallium alloy (GaInAs), phosphorus indium gallium alloy (GaInP) and/
Or the combination of phosphorus arsenic indium gallium alloy (GaInAsP) or above-mentioned material.
The material of above-mentioned drain electrode 112 and source electrode 114 may include copper, aluminium, molybdenum, tungsten, gold, chromium, nickel, platinum, titanium,
Iridium, rhodium, above-mentioned alloy, combinations of the above or the good metal material of other electric conductivity, may be, for example, molybdenum aluminium molybdenum (Mo/Al/Mo)
Or the three-decker of titanium aluminium titanium (Ti/Al/Ti).In other embodiments, the material of above-mentioned drain electrode 112 and source electrode 114
Material can be a nonmetallic materials, and only material to be used is conductive.This drain electrode 112 and source electrode 114
Material can pass through chemical vapour deposition technique above-mentioned (CVD), sputtering method, resistive heating evaporation, e-beam evaporation or other
Any suitable depositional mode is formed.In some embodiments, above-mentioned drain electrode 112 can phase with the material of source electrode 114
Together, and can by with along with deposition step formed.However, in other embodiments, above-mentioned drain electrode 112 and source electrode
114 can also be formed by different deposition steps, and its material can be different from each other.
With continued reference to Fig. 2A, substrate 102 further includes the first insulation for covering thin film transistor (TFT) 110 and gate dielectric 124
Layer 128.This first insulating layer 128 can be silicon nitride, silica or silicon oxynitride.First insulating layer 128 can pass through chemical gas
Phase sedimentation (CVD) or method of spin coating are formed, this chemical vapour deposition technique may be, for example, Low Pressure Chemical Vapor Deposition (low
Pressure chemical vapor deposition, LPCVD), low temperature chemical vapor deposition method (low temperature
Chemical vapor deposition, LTCVD), the chemical vapour deposition technique that is rapidly heated (rapid thermal
Chemical vapor deposition, RTCVD), plasma auxiliary chemical vapor deposition method (plasma enhanced
Chemical vapor deposition, PECVD), the atomic layer deposition method (atomic of atomic layer chemical vapor deposition method
Layer deposition, ALD) or other common methods.
Then, alternative on this first insulating layer 128 to be equipped with second insulating layer 130.The material of this second insulating layer 130
Can for organic insulating materials (photosensitive resin) or inorganic insulating materials (silicon nitride, silica, silicon oxynitride, silicon carbide,
The combination of aluminium oxide or above-mentioned material).In addition, above-mentioned second insulating layer 130 and can be etched respectively by etching step twice
One insulating layer 128, to form opening 132.This opening 132 extends downward into source electrode by the upper surface 130S of second insulating layer 130
Electrode 114, and expose the part of the surface 114S of source electrode 114.In other words, this opening 132 exposes transistor 110.
Then, above-mentioned touching signals line 120 is set in second insulating layer 130.The material of above-mentioned touching signals line 120 can wrap
Include copper, aluminium, molybdenum, tungsten, gold, chromium, nickel, platinum, titanium, iridium, rhodium, above-mentioned alloy, combinations of the above or the good metal of other electric conductivity
Material may be, for example, the three-decker of molybdenum aluminium molybdenum (Mo/Al/Mo) or titanium aluminium titanium (Ti/Al/Ti).In other embodiments, above-mentioned
The material of touching signals line 120 can be a nonmetallic materials, and only material to be used is conductive.This touching signals line
120 material can by chemical vapour deposition technique above-mentioned (CVD), sputtering method, resistive heating evaporation, e-beam evaporation,
Or other any suitable depositional modes are formed.
With continued reference to Fig. 2A~Fig. 2 B, display device 100 further includes pixel electrode 134, this pixel electrode 134 extends into out
In mouth 132 and it is electrically connected transistor 110.Specifically, this pixel electrode 134 be set to second insulating layer 130 on (or first insulation
On layer 128), on the side wall of opening 132 and on the surface 114S of source electrode 114, and be electrically connected source electrode 114.In addition,
Display device 100 further includes set on the lining between touching signals line 420 and second insulating layer 130 (or first insulating layer 128)
136.This lining 136 can be identical with the material of pixel electrode 134, and can be formed by depositing with along with photolithographic etching step.
The material of this lining 136 and pixel electrode 134 may include transparent conductive material, for example, indium tin oxide (ITO), tin oxide
(SnO), indium zinc oxide (IZO), indium gallium zinc (IGZO), indium tin zinc oxide (ITZO), antimony tin (ATO), antimony oxide zinc
(AZO), combinations of the above or other any suitable transparent conductive oxide materials.
With continued reference to Fig. 2A, display device 100 further includes being set on (or on the first insulating layer 128) second insulating layer 130
And cover the third insulating layer 138 of touching signals line 120 and pixel electrode 134.And above-mentioned second insulating layer 130 is set to first absolutely
Between edge layer 128 and third insulating layer 138.This third insulating layer 138 has opening 142, this opening 142 is by third insulating layer
138 upper surface 138S extends downward into the upper surface 120S of touching signals line 120.
In addition, as shown in Figure 2 B, third insulating layer 138 also has recess 140 in open region 105, this recess 140 is substantially right
Answer non-shading region 121A.In some embodiments, this recess 140 can be formed by using more greyscale photo masks.Specifically, more
Greyscale photo mask can be divided into interference-type photomask (Gray Tone Mask) and semi-modulation type photomask (half tone mask) two
Kind.Interference-type photomask is to produce exposure machine resolution ratio slit below, then the light of a part is covered by this slit position
Source, to reach the effect of half-exposure.And semi-modulation type photomask is the film for utilizing " translucent ", Lai Jinhang half-exposure.More than because
Both of which is that " exposed portion ", " half-exposure part " and " unexposed portion " can be showed after primary exposure process
Three kinds of exposure level, therefore be capable of forming the photoresist (emulsion) of two kinds of thickness after development.By using in this way
Photoresist difference in thickness, and cooperate subsequent etch manufacture craft, above-mentioned recess can be formed in third insulating layer 138
140。
In addition, in other embodiments, third insulating layer 138 can also be by multilayer and the different insulating layer group of etching selectivity
At, and by knowing that photolithographic etching step forms above-mentioned recess 140 more than twice.
Display device 100 further includes the common electrode for being set on third insulating layer 138 and being electrically connected touching signals line 120
144.Specifically, common electrode 144 be set to third insulating layer 138 on, and extend to opening 142 side wall on and touching signals
On the upper surface 120S of line 120, to be electrically connected touching signals line 120.In addition, when this common electrode 144 is not used as touch-control still
Common electrode, and the sensing electrode as display device.
In addition, common electrode 144 is also set in above-mentioned recess 140.And it is as shown in Figure 2 B, the embodiment of the present invention will common electricity
Pole 144 is set in recess 140, can shorten the distance between pixel electrode 134 and common electrode 144, to increase pixel electrode 134
With the capacitor between common electrode 144, and the thus display quality of lifting device.
In addition, the third insulating layer with continued reference to Fig. 2 B, in non-shading region 121A (open region 105 of corresponding diagram 1A)
138 between common electrode 144 and pixel electrode 134 have thickness T1, and be located at shading region 121B in third insulating layer 138
With thickness T2, and this thickness T1 is less than thickness T2.
As shown in Figure 2 B, the embodiment of the present invention is by making thickness T1 be less than thickness T2, can shorten pixel electrode 134 and common
The distance between electrode 144, to increase the capacitor between pixel electrode 134 and common electrode 144, and thus lifting device is aobvious
Show quality.
In addition, in some embodiments, not contacted at touching signals line 120 directly in common electrode 144, third insulating layer
138 have thickness T3 between common electrode 144 and touching signals line 120, and thickness T2 is equal with thickness T3.
The embodiment of the present invention by making above-mentioned thickness T2 be equal to thickness T3, make touching signals line 120 and common electrode 144 it
Between keep a fixed range, therefore the coupling effect (coupling between touching signals line 120 and common electrode 144 can be reduced
Effect), thus can further lifting device display quality.
In some embodiments, thickness T1 is aboutThickness T2 is aboutExtremelyAnd it is thick
Spending T3 is aboutExtremely
In addition, display device 100 further includes the second substrate 146 that opposing substrate 102 is arranged with continued reference to Fig. 2A~Fig. 2 B
And the display medium 148 between substrate 102 and the second substrate 146.
Above-mentioned display device 100 can be touch liquid crystal display, for example, Thin Film Transistor-LCD.Alternatively, this
Liquid crystal display can be twisted nematic (Twisted Nematic, TN) type liquid crystal display, STN Super TN (Super
Twisted Nematic, STN) type liquid crystal display, double-layer ultra-torsion nematic (Double layer Super Twisted
Nematic, DSTN) type liquid crystal display, vertical orientation (Vertical Alignment, VA) type liquid crystal display, horizontal electricity
Field-effect (In-Plane Switching, IPS) type liquid crystal display, cholesterol (Cholesteric) type liquid crystal display, indigo plant
Phase (Blue Phase) type liquid crystal display, marginal field effect (FFS) type liquid crystal display or other any suitable liquid crystal
Display.
In some embodiments, the second substrate 146 is colorized optical filtering laminar substrate.Specifically, as chromatic filter layer base
The second substrate 146 of plate may include a substrate 150, the light shield layer 152 on this substrate 150, be set to this light shield layer 152 and base
The protective layer 156 of chromatic filter layer 154 and covering light shield layer 152 and chromatic filter layer 154 on plate 150.
In addition, in some embodiments, the region of the light shield layer 152 of the corresponding above-mentioned the second substrate 146 of substrate 102 is to hide
Light area 121B, and the non-shading region 121A of aforesaid substrate 102 refers in display device 100 equipped with the secondary picture including transistor 110
The region of 108 display of element.
Aforesaid substrate 150 may include transparent substrate, may be, for example, glass substrate, ceramic substrate, plastic substrate or other
What suitable transparent substrate, above-mentioned light shield layer 152 may include black photoresist, black printed ink, black resin.On and
Stating chromatic filter layer 154 may include red filter layer, green color filter, blue color filter layer or other any suitable colored filters
Photosphere.
Display device 100 can further include set on the spacer 158 between substrate 102 and the second substrate 146, this spacer
158 is the primary structures to spacer substrate 102 and the second substrate 146, substrate 102 when preventing display device 100 to be pressed
It is contacted with the second substrate 146.
Fig. 2 C is the cross-sectional view of the display device 200 of another embodiment of the present invention.It should be noted that hereinafter with phase above
With or similar element or film layer will be indicated with the same or similar label, material, manufacturing method and function all with institute above
State it is same or similar, so part will not be described in great detail below.
Embodiment shown in fig. 2 C is with the embodiment of earlier figures 2A~Fig. 2 B the difference is that substrate 102 further includes being set to open
The lining 160 on pixel electrode 134 in mouth 132.In addition, the above-mentioned filling of third insulating layer 138 opening 132, and lining 160
Between pixel electrode 134 and third insulating layer 138.
The material of this lining 160 may include copper, aluminium, molybdenum, tungsten, gold, chromium, nickel, platinum, titanium, iridium, rhodium, above-mentioned alloy, above-mentioned
Combination or the good metal material of other electric conductivity, may be, for example, the three of molybdenum aluminium molybdenum (Mo/Al/Mo) or titanium aluminium titanium (Ti/Al/Ti)
Layer structure.In other embodiments, the material of above-mentioned lining 160 can be a nonmetallic materials, and only material to be used has and leads
Electrical property.The material of this lining 160 can be deposited by chemical vapour deposition technique above-mentioned (CVD), sputtering method, resistance heating
Method, e-beam evaporation or other any suitable depositional modes are formed.In some embodiments, above-mentioned touching signals line 120
Can be identical with the material of lining 160, and can by with along with deposition step formed.However, in other embodiments, above-mentioned touch-control
Signal wire 120 can also be formed from lining 160 by different deposition steps, and its material can be different from each other.
It should be noted that in addition to above-mentioned Figure 1A~embodiment shown in fig. 2 C, the common electrode of the embodiment of the present invention, as
Plain electrode and touching signals line can also have other configurations, as shown in the embodiment of fig. 3.The scope of the present invention not with Figure 1A~
Embodiment shown in fig. 2 C is limited.This part will be in being shown in detail below.
Fig. 3 A is drawn by the display device 300A of another embodiment of the present invention along the line segment 2A-2A ' of Figure 1A~Figure 1B
Cross-sectional view.Fig. 3 B is drawn by the display device 300A of another embodiment of the present invention along the line segment 2B-2B ' of Figure 1A~Figure 1B
Cross-sectional view.It should be noted that hereinafter will be with the same or similar label table with the same or similar element above or film layer
Show, material, manufacturing method and function all with it is described previously same or similar, so part will not be described in great detail below.
As shown in Figure 3B, substrate 102 has a non-shading region 121A and shading region 121B.In addition, substrate 102 may include one
First substrate 122, this first substrate 122 may include transparent substrate, for example, glass substrate, ceramic substrate, plastic substrate or its
Its any suitable substrate.And it is as shown in Figure 3A, thin film transistor (TFT) 110 includes the gate electrode on this first substrate 122
118, and the gate dielectric 124 on gate electrode 118 and first substrate 122.
Thin film transistor (TFT) 110 further includes the semiconductor layer 126 on gate dielectric 124, this semiconductor layer 126 and grid
Pole electrode 118 is overlapped, and above-mentioned drain electrode 112 and source electrode 114 are respectively arranged on the two sides of semiconductor layer 126, and respectively
With partly overlapping for 126 two sides of semiconductor layer.
The material of above-mentioned drain electrode 112 and source electrode 114 may include copper, aluminium, molybdenum, tungsten, gold, chromium, nickel, platinum, titanium,
Iridium, rhodium, above-mentioned alloy, combinations of the above or the good metal material of other electric conductivity, may be, for example, molybdenum aluminium molybdenum (Mo/Al/Mo)
Or the three-decker of titanium aluminium titanium (Ti/Al/Ti).In other embodiments, the material of above-mentioned drain electrode 112 and source electrode 114
Material can be a nonmetallic materials, and only material to be used is conductive.This drain electrode 112 and source electrode 114
Material can pass through chemical vapour deposition technique above-mentioned (CVD), sputtering method, resistive heating evaporation, e-beam evaporation or other
Any suitable depositional mode is formed.In some embodiments, above-mentioned drain electrode 112 can phase with the material of source electrode 114
Together, and can by with along with deposition step formed.However, in other embodiments, above-mentioned drain electrode 112 and source electrode
114 can also be formed by different deposition steps, and its material can be different from each other.
With continued reference to Fig. 3 A, substrate 102 further includes the first insulation for covering thin film transistor (TFT) 110 and gate dielectric 124
Layer 128.This first insulating layer 128 can be silicon nitride, silica or silicon oxynitride.First insulating layer 128 can pass through chemical gas
Phase sedimentation (CVD) or method of spin coating are formed, this chemical vapour deposition technique may be, for example, Low Pressure Chemical Vapor Deposition (low
Pressure chemical vapor deposition, LPCVD), low temperature chemical vapor deposition method (low temperature
Chemical vapor deposition, LTCVD), the chemical vapour deposition technique that is rapidly heated (rapid thermal
Chemical vapor deposition, RTCVD), plasma auxiliary chemical vapor deposition method (plasma enhanced
Chemical vapor deposition, PECVD), the atomic layer deposition method (atomic of atomic layer chemical vapor deposition method
Layer deposition, ALD) or other common methods.
Then, alternative on this first insulating layer 128 to be equipped with second insulating layer 130.The material of this second insulating layer 130
Can for organic insulating materials (photosensitive resin) or inorganic insulating materials (silicon nitride, silica, silicon oxynitride, silicon carbide,
The combination of aluminium oxide or above-mentioned material).
With continued reference to Fig. 3 A~Fig. 3 B, substrate 102 further includes being set in second insulating layer 130 (or the first insulating layer 128
On) common electrode 144.This common electrode 144 may include transparent conductive material, for example, indium tin oxide (ITO), tin oxide
(SnO), indium zinc oxide (IZO), indium gallium zinc (IGZO), indium tin zinc oxide (ITZO), antimony tin (ATO), antimony oxide zinc
(AZO), combinations of the above or other any suitable transparent conductive oxide materials.In addition, this common electrode 144 is not made still
Common electrode when for touch-control, and the sensing electrode as display device, wherein the driving method of its touch-control can be self-capacitance
Driving method (self-capacitive type).
It further include being set in second insulating layer 130 (or the first insulating layer with continued reference to Fig. 3 A~Fig. 3 B, display device 300A
On 128) and cover common electrode 144 third insulating layer 138.This third insulating layer 138 can for silicon nitride, silica or
Silicon oxynitride.And above-mentioned second insulating layer 130 is set between the first insulating layer 128 and third insulating layer 138.This third insulating layer
138 have opening 162, this opening 162 extends downward into common electrode 144 by the upper surface 138S of third insulating layer 138.
Then, above-mentioned touching signals line 120 is set on third insulating layer 138.This touching signals line 120 passes through above-mentioned opening
162 electrical connection common electrodes 144.
The material of above-mentioned touching signals line 120 may include copper, aluminium, molybdenum, tungsten, gold, chromium, nickel, platinum, titanium, iridium, rhodium, above-mentioned
Alloy, combinations of the above or the good metal material of other electric conductivity, may be, for example, molybdenum aluminium molybdenum (Mo/Al/Mo) or titanium aluminium titanium (Ti/
Al/Ti three-decker).In other embodiments, the material of above-mentioned touching signals line 120 can be a nonmetallic materials, as long as
The material used is conductive.The material of this touching signals line 120 can pass through chemical vapour deposition technique above-mentioned
(CVD), sputtering method, resistive heating evaporation, e-beam evaporation or other any suitable depositional modes are formed.
It further include being set on third insulating layer 138 and covering touch-control letter with continued reference to Fig. 3 A~Fig. 3 B, display device 300A
4th insulating layer 164 of number line 120.This 4th insulating layer 164 can be silicon nitride, silica or silicon oxynitride.In addition, such as
Shown in Fig. 3 A, substrate 102 further includes opening 166, this opening 166 extends through the 4th insulating layer 164, third insulating layer 138, the
Two insulating layers 130 and the first insulating layer 128, and expose transistor 110, that is, opening 166 exposes the part of source electrode 114
Surface 114S.
It further include being set on the 4th insulating layer 164 and being electrically connected crystal with continued reference to Fig. 3 A~Fig. 3 B, display device 300A
The pixel electrode 134 of pipe 110.The material of this pixel electrode 134 may include transparent conductive material, for example, indium tin oxide
(ITO), tin oxide (SnO), indium zinc oxide (IZO), indium gallium zinc (IGZO), indium tin zinc oxide (ITZO), antimony tin
(ATO), antimony oxide zinc (AZO), combinations of the above or other any suitable transparent conductive oxide materials.
As shown in Figure 3A, this pixel electrode 134 passes through 166 electrical connection transistor 110 of opening.Specifically, pixel electrode
134 be set to the 4th insulating layer 164 on, and extend to opening 166 side wall on and the surface 114S of source electrode 114 on, with electricity
Connect the source electrode 114 of transistor 110.
In addition, as shown in Figure 3B, the 4th insulating layer 164 also has recess 140, and this recess 140 is generally corresponding to non-shading
Area 121A (open region 105 of corresponding diagram 1A).And pixel electrode 134 is also set in above-mentioned recess 140.As shown in Figure 3A, this hair
Pixel electrode 134 is set in recess 140 by bright embodiment, can shorten the distance between common electrode 144 and pixel electrode 134,
To increase the capacitor between common electrode 144 and pixel electrode 134, and the thus display quality of lifting device.
In addition, with continued reference to Fig. 3 B, the distance between common electrode 144 and the pixel electrode 134 that is set in recess 140 in
It is first distance D1 in non-shading region 121A, and in the 121B of shading region, the upper surface 164S of the 4th insulating layer 164 and common electricity
The distance between pole 144 is second distance D2, and this first distance D1 is less than second distance D2.
As shown in Figure 3B, the embodiment of the present invention can shorten common electrode by making first distance D1 be less than second distance D2
The distance between 144 and pixel electrode 134, to increase the storage capacitors between common electrode 144 and pixel electrode 134 and electricity
, and the thus display quality of lifting device.
In addition, in some embodiments, as shown in Figure 3B, recess 140 runs through the 4th insulating layer 164, and is located at recess 140
In pixel electrode 134 directly contact the upper surface 138S of third insulating layer 138.
In addition, with continued reference to Fig. 3 A, display device 300A further include the second substrate 146 that opposing substrate 102 is arranged and
Display medium 148 between substrate 102 and the second substrate 146.
Above-mentioned display device 300A can be touch liquid crystal display, for example, Thin Film Transistor-LCD.Alternatively, this
Liquid crystal display can be twisted nematic (Twisted Nematic, TN) type liquid crystal display, STN Super TN (Super
Twisted Nematic, STN) type liquid crystal display, double-layer ultra-torsion nematic (Double layer Super Twisted
Nematic, DSTN) type liquid crystal display, vertical orientation (Vertical Alignment, VA) type liquid crystal display, horizontal electricity
Field-effect (In-Plane Switching, IPS) type liquid crystal display, cholesterol (Cholesteric) type liquid crystal display, indigo plant
Phase (Blue Phase) type liquid crystal display, marginal field effect (FFS) type liquid crystal display or other any suitable liquid crystal
Display.
In some embodiments, the second substrate 146 is colorized optical filtering laminar substrate.Specifically, as chromatic filter layer base
The second substrate 146 of plate may include a substrate 150, the light shield layer 152 on this substrate 150, be set to this light shield layer 152 and base
The protective layer 156 of chromatic filter layer 154 and covering light shield layer 152 and chromatic filter layer 154 on plate 150.
In addition, the region of the light shield layer 152 of the corresponding above-mentioned the second substrate 146 of substrate 102 is shading region 121B, and substrate
102 non-shading region 121A, which refers to, is equipped with the region that the sub-pixel 108 including transistor 110 is shown in display device 300A.
Aforesaid substrate 150 may include transparent substrate, may be, for example, glass substrate, ceramic substrate, plastic substrate or other
What suitable transparent substrate, above-mentioned light shield layer 152 may include black photoresist, black printed ink, black resin.On and
Stating chromatic filter layer 154 may include red filter layer, green color filter, blue color filter layer or other any suitable colored filters
Photosphere.
Display device 300A can further include set on the spacer 158 between substrate 102 and the second substrate 146, this spacer
158 is the primary structures to spacer substrate 102 and the second substrate 146, substrate 102 when preventing display device 300A to be pressed
It is contacted with the second substrate 146.
Fig. 3 C is drawn by the display device 300B of another embodiment of the present invention along the line segment 2B-2B ' of Figure 1A~Figure 1B
Cross-sectional view.It should be noted that hereinafter will be with the same or similar label table with the same or similar element above or film layer
Show, material, manufacturing method and function all with it is described previously same or similar, so part will not be described in great detail below.
Embodiment shown in Fig. 3 C is with the embodiment of earlier figures 3B the difference is that third insulating layer 138 also has recess
168, this recess 168 is generally corresponding to non-shading region 121A.In addition, above-mentioned 4th insulating layer, 164 compliance is set to third insulating layer
Recess 140 is formed in 138 recess 168.
In addition, as shown in Figure 3 C, the third insulating layer being located in non-shading region 121A (open region 105 of corresponding diagram 1A)
138 between common electrode 144 and pixel electrode 134 have thickness T4, and be located at shading region 121B in third insulating layer 138
With thickness T5, and this thickness T4 is less than thickness T5.In some embodiments, thickness T4 isAnd thickness T5 is
2000 to
As shown in Figure 3 C, the embodiment of the present invention can shorten common electrode 144 and pixel by making thickness T4 be less than thickness T5
The distance between electrode 134, to increase the capacitor between common electrode 144 and pixel electrode 134, and thus lifting device is aobvious
Show quality.
In conclusion the embodiment of the present invention can increase pixel by shortening the distance between pixel electrode and common electrode
Capacitor between electrode and common electrode, and can thus lifting device display quality.In addition, by making touching signals line together
With a fixed range is kept between electrode, the coupling effect (coupling between touching signals line and common electrode can be reduced
Effect), thus can further lifting device display quality.
It is moreover observed that those skilled in the art scholar knows very well, drain electrode described in the embodiment of the present invention and source
It is extremely interchangeable, because the voltage level that its definition is connect with itself is related.
It is worth noting that, it is limit of the invention that above-described component size, component parameters and component shape are all non-
Condition processed.Having usually intellectual in this technical field can need to adjust these setting values according to different.In addition, of the invention
Touch control display apparatus and its manufacturing method are not limited in the illustrated state of Figure 1A~Fig. 3 C.The present invention can only include Figure 1A
One or more any features of one or more any embodiments of~Fig. 3 C.In other words, and the feature of not all diagram must be same
When be implemented in touch control display apparatus and its manufacturing method of the invention.
Although disclosing the present invention in conjunction with above embodiments, it will be appreciated that having in any technical field
Usual skill, without departing from the spirit and scope of the present invention, when can change, substitute with retouching.In addition, guarantor of the invention
Shield range is not necessarily limited by manufacture craft, machine, manufacture, material composition, device, side in specification in the specific embodiment
Method and step, any those of ordinary skill in the art can understand the existing or following institute from disclosure of the present invention
Manufacture craft, machine, manufacture, material composition, device, method and the step developed, as long as can the embodiment here
It is middle implement more or less the same function or obtain more or less the same result all can be used according to the invention.Therefore, protection scope of the present invention
Including above-mentioned manufacture craft, machine, manufacture, material composition, device, method and step.In addition, each claim is constituted individually
Embodiment, and protection scope of the present invention also includes the combination of each claim and embodiment.
Claims (10)
1. a kind of touch control display apparatus, comprising:
First substrate has an at least pixel unit, which includes a non-shading region and a shading region and include:
Transistor is set on the first substrate；
First insulating layer is set to the first substrate and is located on the transistor；
Touching signals line is set on first insulating layer；
Second insulating layer is set on first insulating layer and on the touching signals line, and wherein the second insulating layer has recess pair
It should non-shading region；And
First electrode is set in the second insulating layer and in the recess；
Wherein the second insulating layer has a first thickness in the non-shading region,
Wherein the second insulating layer is located at the shading region with a second thickness, and the first thickness is less than the second thickness；
The second substrate, the opposite first substrate are arranged；And
Display medium is set between the first substrate and the second substrate.
2. touch control display apparatus as described in claim 1, wherein the pixel unit also includes:
Second electrode is set between first insulating layer and the second insulating layer, which there is an opening to expose should
Transistor, and the second electrode is electrically connected the transistor by the opening.
3. touch control display apparatus as claimed in claim 2, wherein the second insulating layer is in the first electrode and the touching signals
There is a third thickness, which is more than or equal to the third thickness between line.
4. touch control display apparatus as claimed in claim 3, the wherein pixel unit further include:
First lining is set between the touching signals line and first insulating layer.
5. touch control display apparatus as claimed in claim 4, wherein the pixel unit also includes:
Second lining, in the second electrode in the opening and second lining is set to the second electrode and second insulation
Between layer.
6. a kind of touch control display apparatus, comprising:
First substrate has an at least pixel unit, which includes a non-shading region and a shading region and include:
Transistor is set on the first substrate；
First insulating layer is set to the first substrate and is located on the transistor；
First electrode is set on first insulating layer；
Second insulating layer is set on first insulating layer and in the first electrode；
Touching signals line is set in the second insulating layer；
Third insulating layer in the second insulating layer and covers the touching signals line, and wherein the third insulating layer has a pair
Should non-shading region the first recess；And
Second electrode is set on the third insulating layer and in first recess；
Wherein there is between the first electrode and the second electrode in first recess first distance,
Wherein in the shading region, there is a second distance between the upper surface and the first electrode of the third insulating layer, and
The first distance is less than the second distance；
The second substrate, the opposite first substrate are arranged；And
Display medium is set between the first substrate and the second substrate.
7. touch control display apparatus as claimed in claim 6, wherein first recess runs through the third insulating layer, and be located at this
The second electrode in one recess contacts a upper surface of the second insulating layer.
8. touch control display apparatus as claimed in claim 6,
The second insulating layer being wherein located in the non-shading region has one first between the first electrode and the second electrode
Thickness,
Wherein being located at the second insulating layer in the shading region has a second thickness, and the first thickness is less than second thickness
Degree.
9. touch control display apparatus as claimed in claim 6, wherein the second insulating layer has one to be located at the of the non-shading region
Two recesses, and second recess is corresponding with first recess.
10. touch control display apparatus as claimed in claim 6, wherein the second insulating layer has the first opening, and the touch-control is believed
Number line is electrically connected the first electrode by first opening.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562171592P | 2015-06-05 | 2015-06-05 | |
| US62/171,592 | 2015-06-05 |
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| CN106648241A (en) * | 2016-12-26 | 2017-05-10 | 南京中电熊猫液晶显示科技有限公司 | IGZO-based touch panel and manufacturing method thereof |
| CN110196521A (en) * | 2019-05-30 | 2019-09-03 | 京东方科技集团股份有限公司 | Array substrate and preparation method thereof, display device |
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| CN106249493A (en) | 2016-12-21 |
| TW201643644A (en) | 2016-12-16 |
| TWI591524B (en) | 2017-07-11 |
| TW201643639A (en) | 2016-12-16 |
| CN106249493B (en) | 2019-10-11 |
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| TWI581150B (en) | 2017-05-01 |
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