TW201642985A - Joining apparatus, joining system, joining method, and computer storage - Google Patents

Abstract

The purpose of the present invention is to properly bond multiple chips arranged on a substrate to the substrate. The bonding apparatus includes a processing chamber (100) receiving a wafer (W), an arranging unit (150) installed inside the processing chamber (100), and on which the wafer (W) is arranged, a heating mechanism (151) installed on the arranging unit (150) to heat the wafer (W), and a gas supplying unit (171) installed inside the processing chamber (100) and supplying pressure gas to the interior of the processing chamber (100). The gas supplying unit (171) supplies the pressure gas such that a flow amount of the pressure gas directly sprayed to the wafer (W) on the arranging unit (150) is less than a flow amount of the pressure gas that is not directly sprayed to the wafer (W) on the arranging unit (150). A bonding device includes: a processing chamber for storing a wafer (W); a table (150) provided inside the processing chamber, for holding the wafer by suction; a heating mechanism 156 provided in the table (150), for heating the wafer (W); a vacuum line (152) provided in the table (150), for sucking the wafer (W) by vacuuming; an electrode (155) provided in the table (150), for electrostatically sucking the wafer (W); and a gas supply mechanism for supplying a pressurized gas to the inside of the processing chamber. In the bonding device, after the wafer (W) is sucked on the table (150) by vacuuming by the vacuum line (152), voltage is applied to the electrode (155) to make the wafer (W) be electrostatically sucked on the table (150). Subsequently, the inside of the processing chamber is pressured by the pressurized gas supplied from the gas supply mechanism and the wafer (W) and a plurality of chips are bonded.

Description

Bonding device, bonding system, bonding method, and computer memory medium

The present invention relates to a bonding apparatus for bonding a plurality of wafers disposed on a substrate to the substrate, a bonding system including the bonding device, a bonding method using the bonding device, and a computer memory medium.

In recent years, in semiconductor devices, the integration of semiconductor wafers (hereinafter referred to as "wafers") has progressed. When a plurality of highly integrated wafers are placed in a horizontal plane and the wafers are formed by wiring, the wiring length is increased, and the electric resistance of the wiring is increased, and the wiring delay is increased.

Therefore, a semiconductor element has been proposed by using a three-dimensional integrated technique in which wafers are stacked in three dimensions. In the three-dimensional integrated technique, bumps of the stacked wafers are bonded to each other, and the laminated wafers are electrically connected.

As a three-dimensional integrated method, for example, a method in which a plurality of wafers are bonded to a semiconductor wafer (hereinafter referred to as "wafer") is used for lamination. In this method, for example, as disclosed in Patent Document 1, The bonding device shown is bonded while being heated while the wafer and the wafer are being heated. That is, after a plurality of wafers are placed on the wafer, and the plate-like body is brought into contact with the plurality of wafers, the wafer and the wafer are heated while the wafer and the wafer are heated, and the wafer and the plurality of wafers are bonded to each other. Wafer.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2004-122216

However, when a plurality of wafers are placed on a wafer, there is a case where the heights of the plurality of wafers do not coincide. In this case, as in Patent Document 1, when the plate-shaped body is used, the wafer and the plurality of wafers cannot be uniformly pressed. For example, when the pressure when pushing the wafer and the wafer is too small, the bonding strength between the wafer and the wafer is not sufficient. On the other hand, for example, when the pressure at the time of pushing the wafer and the wafer is too large, the bump is deformed, and the semiconductor element is damaged.

Therefore, it is considered that, for example, in the inside of the processing chamber, while the wafer on the mounting table is heated, pressurized gas is supplied to the inside of the processing chamber, and the wafer and the plurality of wafers are pressed. In this case, for example, even if the heights of the plurality of wafers on the wafer do not coincide, since the plurality of wafers are pressed by the pressurized gas filled in the inside of the processing chamber, the uniformity can be uniformly Pressure pushes wafer and multiple crystals sheet.

As described above, when the pressurized gas is supplied to the inside of the processing chamber, when the pressurized gas is not controlled, there is a case where, for example, the wafer on the mounting table is directly or not directly sprayed. The part with pressurized gas. In this case, the wafer cannot be uniformly pressed in-plane, and the wafer and the plurality of wafers cannot be properly bonded.

However, the heated wafer may be warped. In this case, the wafer on the mounting table cannot be uniformly heated in the wafer surface, and the pressing cannot be performed uniformly. As a result, the wafer and the plurality of wafers cannot be properly bonded.

The present invention has been made in view of the above circumstances, and an object of the invention is to appropriately bond a plurality of wafers disposed on a substrate to the substrate.

In order to achieve the above object, the present invention provides a bonding apparatus for bonding a plurality of wafers disposed on a substrate to the substrate, the method comprising: a processing chamber for accommodating a substrate; and a mounting table disposed in the processing chamber a substrate; a heating mechanism disposed on the mounting table to heat the substrate; and a gas supply unit disposed inside the processing chamber to supply pressurized gas to the inside of the processing chamber, the gas supply unit The pressurized gas is supplied so that the flow rate of the pressurized gas directly injected onto the substrate on the mounting table is smaller than the flow rate of the pressurized gas which is not directly injected onto the substrate on the mounting table.

According to the invention, the substrate is carried into the processing chamber After sealing the inside of the processing chamber, the substrate is placed on a mounting table heated by a heating mechanism to a predetermined temperature. Thereafter, pressurized gas is supplied from the gas supply portion to the inside of the processing chamber, and the inside of the processing chamber is pressurized to a predetermined pressure. Therefore, the substrate and the plurality of wafers are pressed at a predetermined pressure while being heated to a predetermined temperature, whereby the substrate and the plurality of wafers can be appropriately bonded.

Further, the flow rate of the pressurized gas which is directly ejected from the gas supply unit to the substrate on the mounting table is controlled so as to be smaller than the flow rate of the pressurized gas which is not directly ejected from the gas supply unit to the substrate on the mounting table. In this way, the substrate can be uniformly pressed in the surface of the substrate, so that the substrate and the plurality of wafers can be appropriately bonded.

The gas supply unit may be disposed above the mounting table, has a cylindrical shape with a lower surface, and supplies pressurized gas from the side peripheral surface.

The gas supply unit may be disposed above the mounting table, and has a spherical shape in which a plurality of gas supply holes are formed, and a flow impedance of the gas supply hole of the pressurized gas directly injected onto the substrate on the mounting table, It is greater than the flow impedance of the gas supply hole of the pressurized gas that is not directly injected onto the substrate on the mounting table.

The gas supply unit may have a filter in which a plurality of gas flow holes are formed.

The gas supply unit may be disposed above the mounting table, and a predetermined gap is formed between the gas supply unit and the processing chamber.

The processing chamber may have an upper chamber and a lower chamber divided in a vertical direction, and the upper chamber has a tapered shape that expands concentrically from above to below, and is in a side view. , having a shape in which the inclined surface is convex toward the inside.

According to another aspect of the invention, a joint system including the joint device includes a processing station including the joint device and a temperature control device, wherein the temperature adjustment device adjusts a plurality of the joint devices The temperature of the substrate after the wafer bonding; and the loading/unloading station can hold a plurality of substrates, and the substrate is carried in and out of the processing station.

According to another aspect of the invention, there is provided a bonding method for bonding a plurality of wafers disposed on a substrate to the substrate, wherein the first method includes: carrying the substrate into the processing chamber and sealing the substrate After the inside of the processing chamber, the substrate is placed on a mounting table heated to a predetermined temperature by a heating mechanism; and the second project is provided from the gas supply unit provided inside the processing chamber to the processing chamber The pressurized gas is supplied internally, and the inside of the processing chamber is pressurized to a predetermined pressure to bond the substrate and the plurality of wafers. In the second process, the substrate is directly injected from the gas supply unit to the substrate on the mounting table. The flow rate of the pressurized gas is less than the flow rate of the pressurized gas which is not directly injected onto the substrate on the mounting table from the gas supply portion.

The gas supply unit may be disposed above the mounting table and has a cylindrical shape with a lower surface. In the second process, pressurized gas is supplied from a side peripheral surface of the gas supply unit.

The gas supply unit may be disposed above the mounting table and has a spherical shape in which a plurality of gas supply holes are formed. In the second process, the gas supply unit is directly supplied from the gas supply hole having a relatively large flow resistance. The flow rate of the pressurized gas injected onto the substrate on the mounting table is smaller than the flow rate of the pressurized gas supplied from the gas supply hole having a relatively small flow resistance and not directly injected onto the substrate on the mounting table.

In the second process, the pressurized gas may be supplied through the filter provided in the gas supply unit.

The gas supply unit may be disposed above the mounting table, and a predetermined gap is formed between the gas supply unit and the processing chamber.

Further, according to another aspect of the invention, there is provided a program for operating on a computer that controls a control unit of the engagement device by performing the engagement method by a bonding device.

Moreover, according to another aspect of the present invention, a readable computer memory medium storing the aforementioned program is provided.

In order to achieve the above object, the present invention provides a bonding method for bonding a plurality of wafers disposed on a substrate to the substrate, and is characterized in that: in the first aspect, the substrate is carried into the processing chamber and sealed. After the inside of the processing chamber, the substrate is heated to a predetermined temperature by a heating means, and the substrate is evacuated by a vacuum line provided in the mounting table; the second project is provided in the foregoing After the voltage is applied to the electrodes of the mounting table to electrostatically adsorb the substrate, the vacuuming of the substrate by the vacuum line is stopped; and the third project is performed from the gas supply mechanism. The inside of the processing chamber supplies pressurized gas, and presses the inside of the processing chamber to a predetermined pressure to bond the substrate and the plurality of wafers. In the third process, the pressure inside the vacuum line and the processing chamber The internal pressure is equal.

The inventors thought that when the substrate on the mounting table is heated, the pressurized gas is supplied to the inside of the processing chamber, and the substrate and the plurality of wafers are pressed and joined, and the warpage of the substrate due to heating is suppressed. The substrate is electrostatically adsorbed on the mounting table. In order to electrostatically adsorb the substrate, the substrate must be brought close to the mounting table as much as possible. Therefore, the inventors have further thought that after the substrate is vacuum-adsorbed to the substrate (the first item of the present invention), the electrostatic adsorption substrate (the second aspect of the present invention) engineering). In this case, since the warpage of the substrate is suppressed, the substrate on the mounting table can be uniformly heated in the surface of the substrate, and the pressing can be performed uniformly.

When the substrate is vacuum-adsorbed, it is necessary to form a suction port or a suction groove at a position corresponding to the vacuum line on the mounting surface of the mounting table. Here, when pressurized gas is supplied to the inside of the processing chamber to pressurize the inside of the processing chamber, the pressed substrate is recessed at a position where the suction port or the suction groove is formed. Therefore, the substrate and the plurality of wafers cannot be properly bonded.

Therefore, in the third aspect of the present invention, when the inside of the chamber is pressurized by the pressurized gas, the pressure inside the vacuum line is made equal to the pressure inside the processing chamber. In this case, even if a suction port or a suction groove is formed, there is no case where the substrate is recessed. Therefore, the substrate and the plurality of wafers can be bonded as appropriate.

The aforementioned vacuum line can also be connected to the foregoing via a valve The exhaust line connecting the inside of the chamber is exhausted, and after the second process and before the third process, the valve is opened to connect the vacuum line to the exhaust line, and in the third project, The pressure inside the vacuum line is equal to the pressure inside the processing chamber.

After the third process, the inside of the vacuum line and the inside of the processing chamber may be exhausted from the exhaust line in a state in which the valve is opened.

According to another aspect of the invention, there is provided a program for operating on a computer that controls a control unit of the engagement device in such a manner that the engagement method is performed by the engagement device.

Further, according to another aspect of the present invention, a readable computer memory medium storing the aforementioned program is provided.

Furthermore, another aspect of the invention provides a bonding apparatus for bonding a plurality of wafers disposed on a substrate to the substrate, characterized in that: a processing chamber for accommodating a substrate; and a mounting table disposed in the processing chamber The inside of the substrate is adsorbed and held; the heating means is disposed on the mounting table to heat the substrate; the vacuum line is disposed on the mounting table, and the substrate is evacuated and adsorbed; and the electrode is disposed on the mounting table for electrostatically adsorbing the substrate; a gas supply mechanism that supplies a pressurized gas to the inside of the processing chamber; and a control unit that controls the bonding device to perform a first process of loading the substrate into the processing chamber and sealing the processing chamber After the inside, the substrate is vacuum-adsorbed by the vacuum line in the mounting table heated by the heating means to a predetermined temperature. In the second step, after the voltage is applied to the electrode and the substrate is electrostatically adsorbed, the substrate is stopped. Vacuuming the substrate by the vacuum line; and third, supplying pressurized gas to the inside of the processing chamber from the gas supply mechanism, pressurizing the inside of the processing chamber to a predetermined pressure, and making the vacuum line The internal pressure is equal to the pressure inside the processing chamber, and the substrate is bonded to a plurality of wafers.

The joining device may further include an exhaust line for exhausting the inside of the processing chamber, wherein the vacuum line and the exhaust line are connected via a valve, and the control unit is in the second project After the third process, the valve is opened to connect the vacuum line to the exhaust line, and in the third process, the pressure inside the vacuum line is equal to the pressure inside the processing chamber. Control the aforementioned engagement device.

In the control unit, after the third process, the inside of the vacuum line and the inside of the processing chamber may be exhausted from the exhaust line while the valve is opened. Engagement device.

According to another aspect of the invention, a joint system including the joint device includes a processing station including the joint device and a temperature control device, and the temperature adjustment device adjusts the joint device The temperature of the substrate after the plurality of wafers are joined; and the loading and unloading station can hold a plurality of substrates, and the substrate is carried in and out of the processing station.

According to the present invention, a plurality of wafers disposed on a substrate can be appropriately bonded to the substrate.

1‧‧‧ joint system

2‧‧‧ moving into and out of the station

3‧‧‧ Processing station

30‧‧‧Joining device

31‧‧‧temperature adjustment device

32‧‧‧ Position adjustment device

33‧‧‧Transfer device

41‧‧‧ wafer transfer device

50‧‧‧Control Department

100‧‧‧Processing chamber

101‧‧‧ upper chamber

102‧‧‧lower chamber

104‧‧‧ top board

105‧‧‧Bevel

106‧‧‧Outer Ring

150‧‧‧mounting table

151‧‧‧ heating mechanism

151a‧‧‧ attracting ditch

152‧‧‧vacuum pipeline

155‧‧‧electrode

156‧‧‧ heating mechanism

170‧‧‧ gas supply mechanism

171‧‧‧ Gas Supply Department

175‧‧‧keeper

175a‧‧‧ gas supply hole

176‧‧‧Filter

178‧‧ mechanical stop mechanism

180‧‧‧Exhaust mechanism

181‧‧‧Exhaust line

190‧‧‧Connected pipeline

191‧‧‧ valve

200‧‧‧Gas Supply Department

201‧‧‧Central area

202‧‧‧peripheral area

C‧‧‧ wafer

F‧‧‧ film

W‧‧‧ wafer

Fig. 1 is a plan view showing a schematic configuration of a joining system of the embodiment.

Fig. 2 is a side view showing the outline of the internal structure of the joining system of the embodiment.

[Fig. 3] A perspective view of a wafer and a plurality of wafers.

[Fig. 4] A side view of a wafer and a plurality of wafers.

Fig. 5 is a longitudinal cross-sectional view showing a schematic configuration of a joining device.

Fig. 6 is a plan view showing the outline of a configuration of a joining device.

Fig. 7 is a longitudinal cross-sectional view showing the internal structure of a processing chamber.

Fig. 8 is an explanatory view showing a state in which pressure is applied to the upper chamber of the embodiment.

Fig. 9 is an explanatory view showing a state in which pressure is applied to the upper chamber of the comparative example.

FIG. 10 is a longitudinal cross-sectional view showing a schematic configuration of a gas supply unit.

Fig. 11 is an explanatory view showing a flow of a pressurized gas in a gas supply unit.

Fig. 12 is an explanatory view showing the flow of pressurized gas inside the processing chamber.

Fig. 13 is a flow chart showing the main construction of the joining process.

Fig. 14 is an explanatory view showing the temperature of the heating means, the temperature of the wafer, and the internal pressure of the processing chamber in each of the processes of the bonding process.

Fig. 15 is an explanatory view of a joining operation by a joining device.

Fig. 16 is an explanatory view of a joining operation by a joining device.

Fig. 17 is an explanatory view of a joining operation by a joining device.

Fig. 18 is a longitudinal cross-sectional view showing the outline of a configuration of a gas supply unit according to another embodiment.

Fig. 19 is an explanatory view showing a schematic longitudinal cross-sectional view of a configuration of a periphery of a mounting table.

FIG. 20 is a flow chart showing the main process of the joining process.

Fig. 21 is an explanatory view showing the temperature of the heating means, the temperature of the wafer, the internal pressure of the processing chamber, and the internal pressure of the suction groove in each of the joining processes.

Fig. 22 is an explanatory view showing the operation of a vacuum line and an exhaust line.

Fig. 23 is an explanatory view showing the operation of a vacuum line and an exhaust line.

Fig. 24 is an explanatory view showing the operation of a vacuum line and an exhaust line.

Fig. 25 is an explanatory view of a joining operation by a joining device.

Fig. 26 is an explanatory view showing the operation of a vacuum line and an exhaust line.

Fig. 27 is an explanatory view showing the operation of a vacuum line and an exhaust line.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. Further, the inventors are not limited by the embodiments shown below.

<1. Composition of the joint system>

First, the configuration of the joining system of the present embodiment will be described. Fig. 1 is a plan view showing the outline of the configuration of the joining device 1. Fig. 2 is a side view showing the outline of the internal structure of the joining device 1. In addition, in the following, in order to clarify the positional relationship, the X-axis direction, the Y-axis direction, and the Z-axis direction orthogonal to each other are defined, and the Z-axis positive direction is set to the vertical upward direction.

In the bonding system 1, as shown in FIGS. 3 and 4, a wafer W as a substrate and a plurality of wafers C are bonded. The wafer W is, for example, a semiconductor wafer (element wafer) in which a device is formed, such as a germanium wafer or a compound semiconductor wafer. On the surface of the wafer W, a plurality of bumps are formed. Further, a plurality of bumps are formed on the surface of the wafer C so that the wafer C is turned over so that the surface on which the plurality of bumps are formed faces the wafer W side. That is, the surface on which the plurality of bumps are formed in the wafer W and the surface on which the plurality of bumps are formed in the wafer C are disposed to face each other. The bumps of the wafer W and the bumps of the wafer C are formed at corresponding positions, and the wafer W and the plurality of wafers C are bonded by the bump bonding. Further, the bumps are made of, for example, copper. In this case, bonding of the wafer W to the plurality of wafers C causes copper to be bonded to the copper.

In the surface of the wafer W carried into the bonding system 1, a plurality of wafers C are arranged in advance at predetermined positions. Further, a film F is adhered from a plurality of wafers C, and a position of a plurality of wafers C is fixed to the wafer W. In addition, for the means for fixing a plurality of wafers C to the wafer W, It is not limited to the film F, and any means such as coating can be used.

As shown in Fig. 1, the joining system 1 has a configuration in which, for example, a loading/unloading station 2 is carried out, and a cassette Cs for storing a plurality of wafers W with the outside is carried out; and the processing station 3 There are various processing devices that perform predetermined processing on the wafer W on which a plurality of wafers C are mounted.

The cassette loading and unloading station 2 is provided with a cassette mounting table 10. In the cassette mounting table 10, a plurality of, for example, two cassette mounting plates 11 are provided. The cassette mounting plates 11 are arranged side by side in a row in the Y-axis direction (upper and lower directions in FIG. 1). In the cassette mounting plate 11, the cassette Cs can be placed when the cassette Cs is carried in and out of the joint system 1. In this way, the loading/unloading station 2 is configured to hold a plurality of wafers W. In addition, the number of the cassette mounting plates 11 is not limited to this embodiment, and can be arbitrarily determined.

The loading/unloading station 2 is provided with a wafer conveying unit 20 adjacent to the cassette mounting table 10. The wafer transfer unit 20 is provided with a wafer transfer device 22 that can move freely on the transfer path 21 extending in the Y-axis direction. The wafer transfer device 22 is also movably movable around the vertical direction and the vertical axis (theta direction), and the cassette Cs on the respective cassette mounting plates 11 and the position adjusting device 32 of the processing station 3 to be described later are moved. The wafer W is transferred between the transfer devices 33.

The processing station 3 is provided with an engagement device 30, a temperature adjustment device 31, a position adjustment device 32, and a transfer device 33. For example, on the front side of the processing station 3 (the negative side in the Y-axis direction in Fig. 1), the connection is provided. The closing device 30 is provided with a temperature adjusting device 31 on the back side of the processing station 3 (the positive side in the Y-axis direction in Fig. 1). Further, the position adjustment device 32 and the transfer device 33 are provided on the loading/unloading station 2 side of the processing station 3 (the positive side in the X-axis direction in Fig. 1). The position adjusting device 32 and the shifting device 33 are arranged in two layers from the top as shown in Fig. 2 . Further, the number or arrangement of the devices of the joining device 30, the temperature adjusting device 31, the position adjusting device 32, and the transferring device 33 can be arbitrarily set.

The bonding device 30 is a device that bonds the wafer W to a plurality of wafers C. The configuration of the bonding device 30 will be described later.

The temperature adjustment device 31 is a device that adjusts the temperature of the wafer W after the bonding device 30 performs heating. The temperature adjustment device 31 is provided with a cooling member such as a Boerule element, and is provided with a temperature adjustment plate (not shown) capable of temperature adjustment.

The position adjusting device 32 is a device that adjusts the orientation of the wafer W in the circumferential direction. The position adjusting device 32 has a chuck (not shown) that rotates and holds the wafer W, and a detecting portion (not shown) that detects the position of the notch portion of the wafer W. Further, in the position adjustment mechanism 32, while the wafer W held by the chuck is rotated, the position of the notch portion of the wafer W is detected by the detecting portion, thereby adjusting the position of the notch portion, thereby adjusting The orientation of the wafer W in the circumferential direction.

The transfer device 33 is a device for temporarily placing the wafer W.

As shown in FIG. 1, in the area surrounded by the joining device 30, the temperature adjusting device 31, the position adjusting device 32, and the shifting device 33, A wafer transfer region 40 is formed. In the wafer transfer region 40, for example, a wafer transfer device 41 is disposed.

The wafer transfer device 41 has, for example, a transfer arm that is movable in the vertical direction, the horizontal direction (the X-axis direction, the Y-axis direction), and the vertical axis (the θ direction). The wafer transfer device 41 moves in the wafer transfer region 40, and can transport the wafer W to the surrounding bonding device 30, the temperature adjustment device 31, the position adjustment device 32, and the transfer device 33.

In the above-described joint system 1, a control unit 50 is provided. The control unit 50 is, for example, a computer and has a program storage unit (not shown). In the program storage unit, a program for controlling the joining process of the wafer W and the plurality of wafers C in the bonding system 1 is stored. Further, in the program storage unit, a program for controlling the operation of the drive system such as the various processing devices or the transfer device described above to realize the joining process described later in the joining system 1 is also stored. In addition, the aforementioned program is a computer readable memory medium H recorded on a computer-readable hard disk (HD), floppy disk (FD), compact disk (CD), magneto-optical disk (MO), memory card, and the like. Alternatively, the memory medium H may be attached to the control unit 50.

<2. Composition of the joint device>

Next, the configuration of the above-described joining device 30 will be described. FIG. 5 is a schematic longitudinal cross-sectional view showing the configuration of the joining device 30. Fig. 6 is a plan view showing the outline of the configuration of the joining device 30.

As shown in Fig. 5, the joining device 30 has a processing container 100 that can be sealed inside. Processing chamber 100 having an upper chamber 101 With the lower chamber 102. The upper chamber 101 is disposed above the lower chamber 102.

As shown in Fig. 7, the upper chamber 101 has a hollow structure in which an opening is formed on the lower side. Below the upper chamber 101, a sealing material 103 for maintaining the airtightness of the inside of the processing chamber 100 is annularly provided. The sealing member 103 is provided to protrude from the lower surface of the upper chamber 101. Further, the lower chamber 102 has a hollow structure in which an opening is formed on the inner side and the inner side of the lower surface, respectively. The lower surface of the upper chamber 101 and the upper surface of the lower chamber 102 are disposed to face each other. Further, the inside of the processing chamber 100 is formed into a sealed space such that the sealing member 103 abuts against the upper surface of the lower chamber 102.

Further, as shown in FIG. 8, the upper chamber 101 has a top plate 104, a slope portion 105, and an outer peripheral ring 106. The upper end portion of the inclined surface portion 105 is connected to the outer edge portion of the top plate 104, and the lower end portion of the inclined surface portion 105 is connected to the inner edge portion of the outer peripheral ring 106. The diameter of the top plate 104 is smaller than the inner diameter of the outer peripheral ring 106, and the inclined surface portion 105 has a tapered shape that expands concentrically from the upper side toward the lower side in a side view. Further, the inclined surface portion 105 has a shape that is convex toward the inner side, that is, the inner side of the processing chamber 100, in a side view.

Here, for example, when the inside of the processing chamber 100 is pressurized, pressure is applied to the outer side of the processing chamber 100 from the inside of the processing chamber 100. In this case, for example, as shown in FIG. 9, when the inclined surface portion 105a has a shape convex outward in the side view, a force in the stretching direction acts on the inclined surface portion 105a. In order to counter the tensile force, For example, it is necessary to increase the thickness of the inclined surface portion 105a or the like and increase the strength of the inclined surface portion 105a.

On the other hand, in the present embodiment, as shown in FIG. 8, the inclined surface portion 105 has a shape that is convex toward the inner side in the side view. Therefore, a force in the compression direction acts on the inclined surface portion 105. In this way, for example, the thickness of the inclined surface portion 105 can be made thinner, and the strength of the inclined surface portion 105 can be suppressed to be smaller than the strength of the inclined surface portion 105a, and the manufacturing cost of the upper chamber 101 can be reduced.

Further, as shown in FIG. 7, the inner side surface of the upper chamber 101 and the inner side surface of the lower chamber 102 have a substantially streamline shape in a side view. Since the stress can be suppressed from being concentrated at specific positions of the upper chamber 101 and the lower chamber 102, the inner side surfaces of the upper chambers 101 and the inner side surfaces of the lower chambers 102 are prevented from being as sharp as possible.

As shown in FIG. 5, the upper chamber 101 is supported by the upper chamber base 110, which is disposed above the upper chamber 101. The upper chamber base 110 has a larger diameter than the upper surface of the upper chamber 101.

On the outer peripheral ring 106 of the upper chamber 101, a rib 111 is provided between the upper chamber base 110 and the upper chamber base 110, for example, at four places. That is, in the upper chamber base 110, the upper chamber 101 and the rib 111 are fixed and supported.

Further, the upper chamber 101 has a tapered shape that expands concentrically from the upper side toward the lower side, and has an oblique shape in a side view. The shape in which the face portion is convex toward the inside. In the outer peripheral portion of the upper chamber 101, a rib 111 is provided between the upper chamber base 110 and the upper chamber base 110, for example, at four places. That is, in the upper chamber base 110, the upper chamber 101 and the rib 111 are fixed and supported.

Here, since the upper chamber 101 is supported at the central portion of the upper chamber base 110, in the case where, for example, the inside of the processing chamber 100 is pressurized, when there is no rib 111, the stress It will concentrate on the central portion of the upper chamber base 110. From this point of view, in the present embodiment, the internal pressure of the processing chamber 100 is dispersed and transmitted to the central portion and the outer peripheral portion of the upper chamber base 110 via the upper chamber 101 and the rib 111. Therefore, stress concentration on the specific position of the upper chamber base 110 can be suppressed.

At an upper portion of the upper portion of the upper chamber base 110, an upper cooling mechanism 112 for cooling the upper chamber base 110 is provided. More specifically, in the central portion of the upper surface of the upper chamber base 110, in order to achieve weight reduction of the upper chamber base 110, a concave portion is formed, and an upper cooling mechanism 112 is provided in the concave portion. . Inside the upper cooling mechanism 112, a refrigerant flow path (not shown) through which a cooling medium such as cooling water flows is formed. Further, the upper cooling mechanism 112 is not limited to the embodiment, and various configurations can be adopted as long as the upper chamber base 110 can be cooled. For example, in the upper cooling mechanism 112, a cooling member such as a Boeing element may be built in.

The lower chamber 102 is supported by the lower chamber base 120, which is disposed below the lower chamber 102. surface. The lower chamber base 120 has a larger diameter than the lower portion of the lower chamber 102.

At a central portion of the lower surface of the lower chamber base 120, a lower cooling mechanism 121 for cooling the lower chamber base 120 is provided. Inside the lower cooling mechanism 121, a refrigerant flow path (not shown) through which a cooling medium such as cooling water flows is formed. Further, the lower cooling mechanism 121 is not limited to the embodiment, and various configurations can be adopted as long as the lower chamber base 120 can be cooled. For example, in the lower cooling mechanism 121, a cooling member such as a Bering element may be built in.

In the upper chamber base 110, a moving mechanism 130 for moving the upper chamber base 110, that is, the upper chamber 101, in the vertical direction is provided. The moving mechanism 130 has a shaft 131, a support plate 132, and a vertical moving portion 133. The shaft 131 is disposed at, for example, four locations on the outer circumference of the upper chamber base 110. Moreover, each of the shafts 131 extends in the vertical direction and penetrates the lower chamber base 120 to be supported by the support plate 132. The support plate 132 is disposed below the lower chamber base 120. The support plate 132 is provided with, for example, a vertical moving portion 133 of a cylinder or the like. By the vertical moving portion 133, the support plate 132 and the shaft 131 are moved in the vertical direction, and the upper chamber base 110 and the upper chamber 101 are configured to be movable in the vertical direction.

The shaft 131 is provided with a locking mechanism 140 that restricts the movement of the shaft 131. As shown in FIG. 6, the locking mechanism 140 is disposed at, for example, four locations corresponding to the shaft 131. Further, the locking mechanism 140 is disposed on the lower chamber base 120.

As shown in FIGS. 5 and 6, the lock mechanism 140 has a lock pin 141, a horizontal moving portion 142, and a housing 143. The lock pin 141 is inserted into a through hole formed in the shaft 131. At the base end portion of the lock pin 141, a horizontal moving portion 142 such as an air cylinder that moves the lock pin 141 in the horizontal direction is provided. A housing 143 is provided on the outer peripheral surface of the shaft 131, and the housing 143 supports a locking pin 141 that is inserted into the through hole of the shaft 131.

As shown in FIG. 7, a mounting table 150 on which the wafer W is placed is provided inside the processing container 100. A plurality of gap pins (not shown) are provided on the mounting table 150, and the wafer W is supported by the plurality of gap pins. Further, a plurality of guide pins (not shown) are provided on the mounting table 150, and the position of the wafer W in the horizontal direction is fixed by the plurality of guide pins. Inside the mounting table 150, a heating mechanism 151 that heats the wafer W is provided. As the heating mechanism 151, for example, a heater is used. Further, the mounting table 150 may be divided into a plurality of regions, and the heating mechanism 151 may be divided into a plurality of portions so as to correspond to the regions to be separated. In this case, the plurality of areas separated by the mounting table 150 can be temperature-regulated for each area.

As shown in FIG. 7, inside the processing container 100, the mounting table 150 which adsorbs and holds the wafer W is provided. The mounting table 150 is configured to vacuum-adsorb the wafer W and perform electrostatic adsorption.

As shown in FIG. 19, on the upper surface of the mounting table 150, a suction groove 151a for suctioning the wafer W is formed. The configuration of the attraction groove 151a is not limited as long as the wafer W is completely adsorbed. The arrangement of the mounting table 150 is sufficient.

A vacuum line 152 is connected to the suction groove 151a. The vacuum line 152 passes through the mounting table 150 and is further provided through a mounting base 158, a lower chamber base 120, and a lower cooling mechanism 121 which will be described later. In the vacuum line 152, a valve 153 is provided. Further, the vacuum line 152 is connected to a vacuum device 154 such as a vacuum pump. Further, the wafer W is adsorbed to the mounting table 150 by the negative pressure generated by the suction of the vacuum device 154.

Inside the mounting table 150, an electrode 155 for electrostatically adsorbing the wafer W is provided. For example, a DC high voltage power supply (not shown) is connected to the electrode 155. Further, a Johnson-Rahbeck force is generated on the upper surface of the mounting table 150 by applying a voltage to the electrode 155, and the wafer W is adsorbed to the mounting table 150. Further, the number of the electrodes 155 is not limited to the embodiment, and can be arbitrarily set. Further, the mounting table 150 may be a Johnson Singer type unipolar electrostatic chuck or a bipolar electrostatic chuck.

Further, inside the mounting table 150, a heating mechanism 156 that heats the wafer W is provided. As the heating mechanism 156, for example, a heater is used. Further, the mounting table 150 may be divided into a plurality of regions, and the heating mechanism 156 may be divided into a plurality of portions so as to correspond to the regions to be separated. In this case, the plurality of areas separated by the mounting table 150 can be temperature-regulated for each area.

Further, a heat shield (not shown) may be provided below the mounting table 150. With the heat shield, the heating mechanism 151 can be suppressed The heat transfer when the wafer W is heated is transferred to the mounting base 153 or the lower chamber base 120 which will be described later.

The mounting table 150 is supported by the mounting base 153 provided below the mounting table 150 via a plurality of rods 152. The stage base 153 is placed on the lower chamber base 120. Further, by providing an air layer between the mounting table 150 and the stage base 153 as described above, heat transfer to the stage base 153 or the lower chamber when the wafer W is heated by the heating mechanism 151 can be suppressed. The case of the pedestal 120.

The stage base 153 is not fixed to the lower chamber base 120. In this case, for example, even if the inside of the processing chamber 100 is heated during the joining process, the stage base 153 can be freely thermally expanded, and thermal stress or deflection due to fixing can be suppressed.

The mounting table 150 is supported by the mounting base 158 provided below the mounting table 150 via a plurality of rods 157. The stage base 158 is placed on the lower chamber base 120. Further, by providing an air layer between the mounting table 150 and the stage base 158 as described above, heat transfer to the stage base 158 or the lower chamber when the wafer W is heated by the heating mechanism 156 can be suppressed. The case of the pedestal 120.

The stage base 158 is not fixed to the lower chamber base 120. In this case, for example, even if the inside of the processing chamber 100 is heated during the joining process, the stage base 158 can be freely thermally expanded, and thermal stress or deflection due to fixing can be suppressed.

As shown in FIG. 5, under the mounting table 150, for example, it is provided at three places to support and lift the wafer W from below. Pin 160. The lift pin 160 is a insertion mount 150, a mount base 153, a lower chamber base 120, and a lower cooling mechanism 121, and is supported by a support plate 161 provided below the lower cooling mechanism 121. The support plate 161 is provided with an elevation drive unit 162 in which, for example, a motor or the like is built. By the elevation drive unit 162, the support plate 161 and the lift pins 160 are lifted and lowered, and the lift pins 160 are protruded from the upper surface of the mounting table 150.

In the processing chamber 100, a gas supply mechanism 170 that supplies pressurized gas to the inside of the processing chamber 100 is provided. The gas supply mechanism 170 includes a gas supply unit 171, a gas supply line 172, and a gas supply unit 173. The gas supply unit 171 is provided above the central axis of the mounting table 150 and supplies pressurized gas to the inside of the processing chamber 100. The gas supply unit 171 is connected to the gas supply device 173 via the gas supply line 172. The gas supply line 172 is provided through the upper chamber 101, the upper chamber base 110, and the upper cooling mechanism 112. The gas supply device 173 stores the pressurized gas inside and supplies the pressurized gas to the gas supply unit 171.

As shown in FIG. 10, a plurality of gas supply holes 172a for supplying a pressurized gas to the gas supply unit 171 are formed on the side peripheral surface of the lower end portion of the gas supply line 172. The gas supply hole 172a is formed, for example, in two layers, and is formed in four rows at equal intervals in the circumferential direction. Further, the number or arrangement of the gas supply holes 172a is not limited to the embodiment, and can be arbitrarily determined.

Further, in the side peripheral surface of the gas supply line 172, a mechanical stopper mechanism to be described later is formed above the gas supply hole 172a. A pair of insertion holes 172b and 172b through which the bolts 180 of 178 are inserted. The pair of insertion holes 172b and 172b are formed to face the radial direction of the gas supply line 172.

Further, at the lower end of the gas supply line 172, a male screw 174 screwed to a female screw 175b of a holder 175 to be described later is provided. The male thread 174 is, for example, welded to the lower end of the gas supply line 172.

The gas supply unit 171 has a holder 175, a filter 176, a lock nut 177, and a mechanical stopper mechanism 178 (mechanical stopper mechanism). The holder 175 has a cylindrical shape that is closed below. On the side peripheral surface of the holder 175, a plurality of, for example, four gas supply holes 175a for supplying a pressurized gas are formed.

The filter 176 is provided along the inner circumferential surface of the retainer 175, and is provided to cover at least the gas supply hole 175a. Further, the filter 176 is provided to cover a plurality of gas supply holes 172a of the gas supply line 172. In the filter 176, a plurality of gas flow holes (not shown) for allowing pressurized gas to flow from the gas supply hole 172a to the gas supply hole 175a are formed. Further, the gas passage holes are small in diameter, and the filter 176 suppresses the flow of particles from the gas supply line 172 into the inside of the processing chamber 100, and suppresses the flow of particles inside the processing chamber 100 to the gas supply. Line 172 side.

Further, as shown in FIG. 11, in the gas supply unit 171, the pressurized gas supplied from the gas supply hole 172a of the gas supply line 172 passes through the gas flow hole of the filter 176, and is ventilated from the holder 175. The body supply hole 175a is supplied to the inside of the processing chamber 100. That is, as shown in FIG. 12, the gas supply unit 171 supplies pressurized gas to the inside of the processing chamber 100 in a substantially horizontal direction. Further, the pressurized gas supplied from the gas supply unit 171 is not directly injected onto the wafer W on the mounting table 150. In FIG. 12, the broken line portion indicates the range in which the pressurized gas is directly injected onto the wafer W on the mounting table 150, and the pressurized gas from the gas supply portion 171 is supplied to the upper side by this range.

As shown in FIG. 10, in the lower portion of the holder 175, a female screw 175b is formed so as to penetrate the retainer 175 in the thickness direction. The female thread 175b is formed at a position corresponding to the male thread 174 such that the male thread 174 is screwed to the female thread 175b, and the retainer 175 is attached to the gas supply line 172. Further, from the lower side of the retainer 175, the lock nut 177 is attached to the male screw 174, and the retainer 175 is fixed. The retainer 175 and the filter 176 are configured to be detachable from the main body portion 179. Thereby, the maintenance of the filter 176 can be easily performed, for example.

Further, the mechanical stopper mechanism 178 has a body portion 179 and a bolt 180. The upper surface of the holder 175 and the upper surface of the filter 176 are respectively formed with openings to cover the upper surface of the holder 175 and the upper surface of the filter 176, and the body portion 179 is provided. The bolt 180 is inserted into the pair of insertion holes 172b and 172b of the gas supply line 172, and is fixed to the main body portion 179. Further, the position of the gas supply portion 171 in the vertical direction is fixed by the mechanical stopper mechanism 178.

The vertical direction of the gas supply unit 171 is fixed in this manner. The position of the position is such that a predetermined gap is formed between the upper surface of the gas supply portion 171 (the upper surface of the main body portion 179) and the lower surface of the upper chamber 101. When the pressurized gas is supplied to the inside of the processing chamber 100 from the gas supply unit 171, the gas supply unit 171 can be prevented from coming into contact with the upper chamber 101 to generate particles. The situation.

As shown in FIG. 5, in the processing chamber 100, an exhaust mechanism 190 that exhausts the inside of the processing chamber is provided. The exhaust mechanism 190 has an exhaust line 191 and an exhaust device 192. The exhaust line 191 is attached to the upper surface of the lower chamber base 120, and is connected to, for example, an exhaust port formed at two places, and is provided through the lower chamber base 120 and the lower cooling mechanism 121. Further, the exhaust line 191 is, for example, an exhaust device 192 connected to a vacuum pump or the like.

Further, the operation of each of the joining devices 30 is controlled by the above-described control unit 50.

<3. Action of the joint system>

Next, a bonding processing method using the wafer W and the plurality of wafers C by the bonding system 1 configured as described above will be described. Fig. 13 is a flow chart showing an example of the main construction of the joining process. FIG. 14 is an explanatory view showing the temperature of the heating mechanism 151 (mounting table 150) in each process of the joining process, the temperature of the wafer W, and the pressure inside the processing chamber 100.

Further, in the present embodiment, as shown in FIGS. 3 and 4, a plurality of wafers C are carried on the surface of the wafer W carried into the bonding system 1. It is preliminarily placed at a predetermined position, and the position of the plurality of wafers C is fixed by the film F.

First, the cassette Cs in which a plurality of wafers W are accommodated is placed on a predetermined cassette mounting plate 11 of the loading/unloading station 2. Thereafter, the wafer W in the cassette Cs is taken out by the wafer transfer device 22 and transported to the position adjusting device 32 of the processing station 3. In the position adjusting device 32, the position of the notch portion of the wafer W is adjusted to adjust the orientation of the wafer W in the circumferential direction (the project S1 of Fig. 13). When the direction of the circumferential direction of the wafer W is adjusted by the process S1 as described above, for example, when the bonding process of the processes S2 to S8 described later is defective, it is possible to easily follow the wafer history and cause a specific defect, thereby improving The conditions of the bonding process.

The process S1 is as shown in Fig. 14. In the joining device 30, the temperature of the heating mechanism 151 is maintained at a predetermined temperature, for example, 300 °C. The temperature of the heating mechanism 151 is maintained at a predetermined temperature by a joining process (the processes S2 to S8 described later). Further, by the joining process, the temperature of the upper cooling mechanism 112 and the temperature of the lower cooling mechanism 121 are also maintained at a normal temperature, for example, 25 ° C, and the upper chamber base 110 and the lower chamber base 120 are respectively cooled. Further, the temperature of the wafer W is, for example, 25 ° C at a normal temperature. Further, although the processing chamber 100 is closed, the internal pressure thereof is, for example, 0.1 MPa (atmospheric pressure).

Thereafter, in the joining device 30, as shown in FIG. 15, the upper chamber 101 is moved upward by the moving mechanism 130, and the processing chamber 100 is opened. Further, the wafer W is carried into the processing chamber 100 by the wafer transfer device 41, and is received in advance to stand by Lifting pin 160.

Next, as shown in FIG. 16, the upper chamber 101 is moved downward by the moving mechanism 130, and the processing chamber 100 is closed. At this time, the sealing material 103 is brought into contact with the upper surface of the lower chamber 102, and the inside of the processing chamber 100 is sealed (item S2 of Fig. 13).

Then, as shown in FIG. 16, the temperature of the wafer W is adjusted by lowering the lift pin 160 by the elevation drive unit 162, that is, the temperature leveling of the wafer W is performed (the process S3 of FIG. 13). In the process S3, since the atmosphere inside the chamber 100 is heated by the heating mechanism 151, the wafer W is also heated. Further, the wafer W was adjusted to about 300 ° C before being placed on the mounting table 150. Further, the temperature adjustment of the wafer W may be controlled so as to adjust the falling speed of the lift pins 160, or the lift pins 160 may be adjusted in a stepwise manner.

Here, in the case of the process S3, when the wafer W is placed on the heated stage 150 without performing the temperature leveling of the wafer W, the temperature of the wafer W rises sharply, and the wafer W is generated. Warping. From this point of view, warpage of the wafer W can be suppressed by performing temperature leveling of the wafer W. Further, from the viewpoint of suppressing the warpage of the wafer W, the wafer W may be heated to a temperature of around 300 ° C and does not need to be strictly adjusted to 300 ° C.

Thereafter, as shown in FIG. 17, the wafer W is placed on the mounting table 150. As a result, the wafer W is heated to 300 °C.

When the wafer W is heated to 300 ° C, it is locked by the machine The horizontal moving portion 142 of the structure 140 inserts the locking pin 141 into the through hole of the shaft 131. As a result, the shaft 131 is fixed in the vertical direction (the construction S4 of Fig. 13).

Further, the fixing of the shaft 131 by the lock mechanism 140 is performed before the gas supply unit 171 supplies the pressurized gas to the inside of the processing chamber 100 in a later-described process S5. The upper chamber 101 is thermally expanded by heat from the heating mechanism 151. Therefore, in a state where the thermal expansion of the upper chamber 101 is stabilized, the position of the upper chamber 101 can be appropriately fixed by fixing the shaft 131.

Thereafter, as shown in FIG. 12, pressurized gas is supplied from the gas supply portion 171 to the inside of the processing chamber 100, and the inside of the processing chamber 100 is pressurized to a predetermined pressure, for example, 0.9 MPa (Project S5 of Fig. 13). . At this time, the pressurized gas supplied from the gas supply unit 171 is not directly injected onto the wafer W on the mounting table 150. Further, the pressurization may be performed, for example, at a fixed pressurization speed, or may be performed in a stepwise manner by repeating the pressure maintenance and the pressure increase for a predetermined period of time. Further, the pressurization control may be performed, for example, by adjusting the opening degree of a valve (not shown) provided in the gas supply line 172, or may control the electric air conditioner provided in the gas supply line 172. The whole device (not shown) is carried out in a manner.

Further, in the engineering S5, in the upper chamber 101, pressure is applied vertically upward, and a force vertically above also acts on the upper chamber base 110. This point of view, as described above, is due to the insertion of the locking pin 141 Up to the through hole, the lower surface of the locking pin 141 abuts against the lower surface of the through hole, and the shaft 131 does not move vertically upward. Therefore, the upper chamber base 110 and the upper chamber 101 do not move vertically upward, and the inside of the processing chamber 100 can be appropriately sealed, and the internal pressure can be maintained at a predetermined pressure.

Moreover, the interior of the processing chamber 100 is maintained at 0.9 MPa, for example, 30 minutes. At this time, as described above, the pressurized gas is supplied from the gas supply unit 171 to the inside of the processing chamber 100 in a substantially horizontal direction, and the pressurized gas supplied from the gas supply unit 171 is not directly injected onto the mounting table 150. Wafer on the W. In this manner, since the pressure is uniformly applied to the wafer surface of the wafer W by the pressurized gas filled in the inside of the processing chamber 100, even if the heights of the plurality of wafers C on the wafer W do not match, The wafer W and the plurality of wafers C may be uniformly pressed by the pressurized gas at an appropriate pressure. Therefore, the wafer W and the plurality of wafers C can be appropriately pressed while being heated to a predetermined temperature, and the wafer W and the plurality of wafers C can be appropriately bonded (the process S6 of FIG. 13).

Thereafter, the supply of the pressurized gas from the gas supply mechanism 170 is stopped, and the inside of the processing chamber 100 is exhausted by the exhaust mechanism 190 (the process S7 of Fig. 13). Further, the inside of the processing chamber 100 was depressurized to 0.1 MPa. Further, the pressure reduction may be performed, for example, at a fixed decompression speed, or may be repeated stepwise by maintaining pressure maintenance and pressure drop for a predetermined period of time. Moreover, the control of the decompression can be performed, for example, by adjusting a valve provided in the gas supply line 172 (not shown). The degree of opening and closing of the gas supply line 172 may be controlled or may be controlled by means of an electric air conditioner (not shown) provided in the gas supply line 172.

Further, in the item S7, the wafer W is raised by the lift pins 160. At this time, the wafer W is cooled.

Moreover, when the inside of the processing chamber 100 is depressurized to 0.1 MPa, the fixing of the shaft 131 by the locking mechanism 140 is released, and the upper chamber 101 is moved to the upper side by the moving mechanism 130 to open the processing chamber. Room 100. Thereafter, the wafer W is transported to the outside of the processing chamber 100 by the wafer transfer device 41. In addition, when the wafer W is carried out from the processing chamber 100, the processing chamber 100 is closed again.

Thereafter, the wafer W is transferred to the temperature adjustment device 31 by the wafer transfer device 41. In the temperature adjustment device 31, the wafer W is temperature-regulated to a normal temperature of, for example, 25 ° C (engineering S8 of Fig. 13).

Thereafter, the wafer W is transported to the transfer device 33 by the wafer transfer device 41, and is further transported to the cassette of the predetermined cassette mounting plate 11 by the wafer transfer device 22 of the loading/unloading station 2. Cs. As a result, the bonding process of the series of wafers W and the plurality of wafers C is completed.

According to the above embodiment, in the process S5, the pressurized gas is supplied from the gas supply unit 171 to the inside of the processing chamber 100 in a substantially horizontal direction, and the pressurized gas supplied from the gas supply unit 171 is not directly The wafer W is ejected onto the mounting table 150. As a result, due to borrowing Pressure is uniformly applied to the wafer surface of the wafer W by the pressurized gas filled in the interior of the processing chamber 100. Therefore, even if the heights of the plurality of wafers C on the wafer W are not uniform, the addition can be performed by the addition. The pressure gas uniformly presses the wafer W and the plurality of wafers C with an appropriate pressure. Therefore, the wafer W and the plurality of wafers C can be appropriately bonded while being heated by a predetermined pressure while heating the wafer W and the plurality of wafers C, thereby appropriately bonding the wafer W and the plurality of wafers C.

Further, since the retainer 175 of the gas supply portion 171 has a cylindrical shape that is closed below, the pressurized gas of the gas supply portion 171 is not supplied to the lower side. Therefore, it is possible to more reliably suppress the direct injection of the pressurized gas from the gas supply unit 171 onto the wafer W on the mounting table 150.

Further, since the pressurized gas from the gas supply unit 171 is not directly injected onto the wafer W on the mounting table 150, the wafer W can be prevented from being damaged.

In addition, in order to make the pressurized gas supplied to the wafer W uniform, for example, a punching plate is provided between the gas supply unit 171 and the wafer W on the mounting table 150. However, in this case, there are many parameters to be considered in the arrangement of the hole diameter or the hole of the punching plate, and it is difficult to make the pressurized gas uniform. Therefore, this embodiment is useful.

Further, in the joining system 1, the loading/unloading station 2 can hold a plurality of wafers W, and the wafer W can be continuously transported from the loading/unloading station 2 to the processing station 3. Moreover, due to the joint system 1, there is a joint Since the device 30 and the temperature adjusting device 31, the above-described processes S1 to S8 can be sequentially performed to continuously bond the wafer W and the plurality of wafers C. Further, in the bonding device 30, other processing may be performed in the other temperature adjusting device 31 while the predetermined processing is being performed. That is, a plurality of wafers W can be processed in parallel within the bonding system 1. Therefore, the bonding of the wafer W and the plurality of wafers C can be performed efficiently, and the productivity of the bonding process can be improved.

<4. Other Embodiments>

In the above embodiment, the configuration of the gas supply unit 171 in the bonding apparatus 30 is not limited to the above embodiment. The flow rate of the pressurized gas which is directly injected from the gas supply unit 171 onto the wafer W on the mounting table 150 is smaller than the flow rate of the pressurized gas which is not directly injected from the gas supply unit 171 to the wafer W on the mounting table 150, that is, The effects of the above embodiments can be enjoyed. That is, the wafer W and the plurality of wafers C can be uniformly pressed with an appropriate pressure, so that the wafer W and the plurality of wafers C can be appropriately bonded.

For example, although the gas supply unit 171 has the holder 175 and the filter 176, the holder 175 may be omitted, and the pressurized gas may be supplied from the filter 176 to the inside of the processing chamber 100.

Moreover, as shown in FIG. 18, the gas supply part 200 may have a spherical shape. In the illustrated example, the gas supply unit 200 has a hemispherical shape that is convex downward, but may have a global shape. Further, the gas supply unit 200 is a plurality of gas supply holes covering the gas supply line 172. The way 172a is set.

The gas supply unit 200 is partitioned into a central region 201 formed vertically below the gas supply line 172 and an outer peripheral region 202 formed annularly above the central region 201. In the center region 201, a plurality of gas supply holes (not shown) are formed, and the pressurized gas from the plurality of gas supply holes is directly injected onto the wafer W on the mounting table 150. In the outer peripheral region 202, a plurality of gas supply holes (not shown) are formed, and the pressurized gas from the plurality of gas supply holes is not directly sprayed onto the wafer W on the mounting table 150. Moreover, the flow impedance of the plurality of gas supply holes in the central region 201 is greater than the flow impedance of the plurality of gas supply holes in the peripheral region 202.

In this case, the flow rate of the pressurized gas directly injected onto the wafer W on the mounting table 150 becomes smaller than the flow rate of the pressurized gas that is not directly injected onto the wafer W on the mounting table 150. Therefore, the same effects as those of the above-described embodiment can be obtained, and the wafer W and the plurality of wafers C can be uniformly pressed with an appropriate pressure.

Further, even in the present embodiment, the same filter as the filter 176 may be provided inside the gas supply unit 200. Further, the gas supply unit 200 may be provided with the same mechanical stopper mechanism as the mechanical stopper mechanism 178 described above.

In the processing chamber 100, a gas supply mechanism 170 that supplies pressurized gas to the inside of the processing chamber 100 is provided. The gas supply mechanism 170 includes a gas supply unit 171, a gas supply line 172, and a gas supply unit 173. The gas supply unit 171 is provided on the mounting table 150 Above, a pressurized gas is supplied to the inside of the processing chamber 100. The gas supply unit 171 is connected to the gas supply device 173 via the gas supply line 172. The gas supply line 172 is provided through the upper chamber 101, the upper chamber base 110, and the upper cooling mechanism 112. The gas supply device 173 stores the pressurized gas inside and supplies the pressurized gas to the gas supply unit 171.

In the processing chamber 100, an exhaust mechanism 180 that exhausts the inside of the processing chamber is provided. The exhaust mechanism 180 has an exhaust line 181, a valve 182, and an exhaust unit 183. The exhaust line 181 is provided on the upper surface of the lower chamber base 120, and is connected to, for example, an exhaust port formed at two places, and is provided through the lower chamber base 120 and the lower cooling mechanism 121. In the exhaust line 181, a valve 182 is provided. Further, the exhaust line 181 is, for example, an exhaust device 183 connected to a vacuum pump or the like.

As shown in FIG. 19, the vacuum line 152 and the exhaust line 181 are connected by a connecting line 190. The connection line 190 is connected to the suction line 151a from the valve 153 in the vacuum line 152, and is connected to the exhaust port side from the valve 182 in the exhaust line 181. Further, a valve 191 is provided in the connection line 190.

Further, the operation of each of the joining devices 30 is controlled by the above-described control unit 50.

<3. Action of the joint system>

Next, a bonding processing method using the wafer W and the plurality of wafers C by the bonding system 1 configured as described above will be described. Figure 20 shows the A flow chart of an example of a major project of joint processing. Fig. 21 is an explanatory view showing the temperature of the heating mechanism 156 (mounting table 150) in each of the joining processes, the temperature of the wafer W, the pressure inside the processing chamber 100, and the pressure inside the suction groove 151a.

Further, in the present embodiment, as shown in FIGS. 3 and 4, a plurality of wafers C are placed in advance on a predetermined position on the surface of the wafer W carried into the bonding system 1, and the film F is used. The position of a plurality of wafers C is fixed.

First, the cassette Cs in which a plurality of wafers W are accommodated is placed on a predetermined cassette mounting plate 11 of the loading/unloading station 2. Thereafter, the wafer W in the cassette Cs is taken out by the wafer transfer device 22 and transported to the position adjusting device 32 of the processing station 3. In the position adjusting device 32, the position of the notch portion of the wafer W is adjusted to adjust the orientation of the wafer W in the circumferential direction (the construction S1 of Fig. 20). When the direction of the circumferential direction of the wafer W is adjusted by the process S1 as described above, for example, when the bonding process of the processes S2 to S10 described later is defective, it is possible to easily follow the wafer history and cause a specific defect, thereby improving The conditions of the bonding process.

The process S1 is as shown in Fig. 21. In the joining device 30, the temperature of the heating mechanism 156 is maintained at a predetermined temperature, for example, 300 °C. The temperature of the heating mechanism 156 is maintained at a predetermined temperature by a joining process (the processes S2 to S8 described later). Further, by the joining process, the temperature of the upper cooling mechanism 112 and the temperature of the lower cooling mechanism 121 are also maintained at a normal temperature, for example, 25 ° C, and the upper chamber base 110 and the lower chamber base 120 are respectively cooled. The temperature of the wafer W is normal temperature, for example 25 ° C. Although the processing chamber 100 is closed, the internal pressure is, for example, 0.1 MPa (atmospheric pressure). The pressure inside the suction groove 151a is also, for example, 0.1 MPa.

Thereafter, in the joining device 30, as shown in FIG. 11, the upper chamber 101 is moved upward by the moving mechanism 130, and the processing chamber 100 is opened. Further, the wafer W is carried into the processing chamber 100 by the wafer transfer device 41, and is taken up to the lift pin 160 that has been raised in advance and is waiting.

Next, as shown in FIG. 12, the upper chamber 101 is moved downward by the moving mechanism 130, and the processing chamber 100 is closed. At this time, the sealing material 103 is brought into contact with the upper surface of the lower chamber 102, and the inside of the processing chamber 100 is sealed (the item S2 in Fig. 20).

Then, as shown in FIG. 12, by raising and lowering the lift pin 160, the temperature of the wafer W is adjusted by the elevation drive unit 162, that is, the temperature leveling of the wafer W is performed (the process S3 of FIG. 20). In the process S3, since the atmosphere inside the chamber 100 is heated by the heating mechanism 156, the wafer W is also heated. Further, the wafer W was adjusted to about 300 ° C before being placed on the mounting table 150. Further, the temperature adjustment of the wafer W may be controlled so as to adjust the falling speed of the lift pins 160, or the lift pins 160 may be adjusted in a stepwise manner.

Here, in the case of the process S3, when the wafer W is placed on the heated stage 150 without performing the temperature leveling of the wafer W, the temperature of the wafer W rises sharply, and the wafer W is generated. Warping. The From the viewpoint, the warpage of the wafer W can be suppressed by performing the temperature leveling of the wafer W. Further, from the viewpoint of suppressing the warpage of the wafer W, the wafer W may be heated to a temperature of around 300 ° C and does not need to be strictly adjusted to 300 ° C.

Thereafter, as shown in FIG. 13, the wafer W is adsorbed and held on the mounting table 150. As a result, the wafer W is heated to 300 °C.

When the wafer W is adsorbed and held by the mounting table 150, vacuum adsorption and electrostatic adsorption are performed in this order. As described above, although the temperature of the wafer W in the process S3 is leveled as a countermeasure against the warpage of the wafer W by heating, since the warpage of the wafer W is more reliably suppressed, the stage 150 is placed on the stage 150. Electrostatically adsorbing wafer W. Further, since the electrostatic adsorption of the wafer W is performed by generating a strong Rabeck force on the upper surface of the mounting table 150, it is necessary to bring the wafer W closer to the mounting table 150 as much as possible. Therefore, the wafer W is vacuum-adsorbed before the electrostatic adsorption of the wafer W.

Specifically, as shown in FIG. 22, the valve 153 of the vacuum line 152 is opened, and the vacuum apparatus 154 is actuated to vacuum-adsorb the wafer W to the mounting table 150 (item S4 of FIG. 20). At this time, the pressure inside the suction groove 151a is, for example, 0.02 MPa. Further, in the process S4, the valve 182 of the exhaust line 181 and the valve 191 of the connection line 190 are respectively closed.

Thereafter, a voltage is applied to the electrode 155 to generate a strong Rabeck force, and the wafer W is electrostatically adsorbed to the mounting table 150 (item S5 of FIG. 20). When the wafer W is electrostatically adsorbed, as shown in FIG. 23, the valve 153 of the vacuum line 152 is closed to stop the vacuum adsorption of the wafer W. At this time, suck The pressure inside the groove 151a is, for example, returned to 0.1 MPa.

Thereafter, as shown in Fig. 24, the valve 191 of the connection line 190 is opened to connect the vacuum line 152 with the exhaust line 181 (item S6 of Fig. 20). As a result, the inside of the suction groove 151a (the inside of the vacuum line 152) and the inside of the processing chamber 100 (the inside of the exhaust line 181) are equal in pressure.

In parallel with the communication between the vacuum line 152 and the exhaust line 181 in the process S6, the lock pin 141 is inserted into the through hole of the shaft 131 by the horizontal moving portion 142 of the lock mechanism 140. As a result, the shaft 131 is fixed in the vertical direction.

Further, the fixing of the shaft 131 by the lock mechanism 140 is performed before the gas supply unit 171 supplies the pressurized gas to the inside of the processing chamber 100 in a later-described process S7. The upper chamber 101 is thermally expanded by heat from the heating mechanism 156. Therefore, in a state where the thermal expansion of the upper chamber 101 is stabilized, the position of the upper chamber 101 can be appropriately fixed by fixing the shaft 131.

Thereafter, as shown in FIG. 25, pressurized gas is supplied from the gas supply unit 171 to the inside of the processing chamber 100, and the inside of the processing chamber 100 is pressurized to a predetermined pressure, for example, 0.9 MPa (engineering S7 of Fig. 20). . The pressurization may be performed, for example, at a fixed pressurization speed, or may be repeated stepwise by maintaining the pressure maintenance and the pressure rise for a predetermined period of time. Further, the pressurization control may be performed, for example, by adjusting the opening degree of a valve (not shown) provided in the gas supply line 172, or may control the electric air conditioner provided in the gas supply line 172. Whole device Show it in a way.

In the construction S7, as shown in FIG. 26, since the valve 191 of the connection line 190 is opened, the pressurized gas inside the processing chamber 100 flows through the exhaust line 181, the connection line 190, and the vacuum line 152. To the suction groove 151a. As a result, the pressure inside the suction groove 151a and the inside of the processing chamber 100 become equal, that is, the pressure inside the suction groove 151a is, for example, 0.9 MPa.

Here, in the process S7, for example, when the vacuum line 152 and the exhaust line 181 are not communicated and the wafer W is evacuated from the suction groove 151a, the wafer is applied to the suction groove 151a in the wafer surface. The pressure of W is different from the pressure applied to the wafer W on a portion other than the suction groove 151a. As a result, there is a possibility that the wafer W and the plurality of wafers C cannot be uniformly bonded in the wafer surface.

Further, for example, when the vacuum line 152 and the exhaust line 181 are not communicated, even if the vacuum of the wafer W from the suction groove 151a is stopped, and the pressure inside the suction groove 151a is set to, for example, 0.1 MPa, it is applied. A pressure difference is generated in the pressure above and below the wafer W. As a result, the wafer W is deflected downward in the suction groove 151a, and the wafer W and the plurality of wafers C cannot be properly bonded.

In this embodiment, since the inside of the suction groove 151a is equal to the pressure inside the processing chamber 100, the pressure applied to the wafer W is formed uniformly in the wafer surface, and In the suction groove 151a, the wafer W does not deflect downward.

Further, in the construction S7, in the upper chamber 101, pressure is applied vertically upward, and further, a force vertically above is applied to the upper chamber base 110. From this point of view, since the lock pin 141 is inserted into the through hole as described above, the lower surface of the lock pin 141 abuts against the lower surface of the through hole, and the shaft 131 does not move vertically upward. Therefore, the upper chamber base 110 and the upper chamber 101 do not move vertically upward, and the inside of the processing chamber 100 can be appropriately sealed, and the internal pressure can be maintained at a predetermined pressure.

Moreover, the interior of the processing chamber 100 is maintained at 0.9 MPa, for example, 30 minutes. In this way, even if the heights of the plurality of wafers C on the wafer W are not uniform, since the plurality of wafers C are pressed by the pressurized gas filled in the interior of the processing chamber 100, the uniformity can be uniformly The appropriate pressure pushes the wafer W and the plurality of wafers C. Therefore, the wafer W and the plurality of wafers C can be appropriately pressed while being heated to a predetermined temperature, and the wafer W and the plurality of wafers C can be appropriately bonded (the construction S8 of FIG. 20).

Thereafter, the supply of the pressurized gas from the gas supply mechanism 170 is stopped, and the inside of the suction groove 151a and the inside of the processing chamber 100 are exhausted by the exhaust mechanism 180 (the process S9 of Fig. 20). Specifically, as shown in FIG. 27, in a state where the valve 191 of the connection line 190 is opened, the valve 182 of the exhaust line 181 is opened to operate the exhaust unit 183. As a result, the inside of the suction groove 151a and the inside of the processing chamber 100 are respectively exhausted, for example, to a pressure of 0.1 MPa. In addition, the pressure reduction may be performed, for example, at a fixed decompression speed, or may be performed. The pressure maintenance and the pressure drop for a predetermined period of time are repeated and performed stepwise. Further, the pressure reduction control may be performed, for example, by adjusting the opening degree of a valve (not shown) provided in the gas supply line 172, or may control the electric air conditioner provided in the gas supply line 172. The whole device (not shown) is carried out in a manner.

Further, in the item S9, the wafer W is raised by the lift pins 160. At this time, the wafer W is cooled.

Moreover, when the inside of the processing chamber 100 is decompressed to 0.1 MPa, the fixing of the shaft 131 by the locking mechanism 140 is released, and the upper chamber 101 is further moved to the upper side by the moving mechanism 130, and is opened. The chamber 100. Thereafter, the wafer W is transported to the outside of the processing chamber 100 by the wafer transfer device 41. In addition, when the wafer W is carried out from the processing chamber 100, the processing chamber 100 is closed again.

Thereafter, the wafer W is transferred to the temperature adjustment device 31 by the wafer transfer device 41. In the temperature adjustment device 31, the wafer W is temperature-regulated to a normal temperature of, for example, 25 ° C (engineering S10 of Fig. 20).

Thereafter, the wafer W is transported to the transfer device 33 by the wafer transfer device 41, and is further transported to the cassette of the predetermined cassette mounting plate 11 by the wafer transfer device 22 of the loading/unloading station 2. Cs. As a result, the bonding process of the series of wafers W and the plurality of wafers C is completed.

According to the above embodiment, in the process S4, after the wafer W is vacuum-adsorbed on the mounting table 150, it is placed in the project S5. Since the stage 150 electrostatically adsorbs the wafer W, warpage of the wafer W due to heating can be suppressed. In this way, in the project S7, the wafer W of the mounting table 150 can be uniformly heated in the wafer surface, and the pressing can be performed uniformly. Therefore, the wafer W and the plurality of wafers C can be appropriately bonded.

Further, since the vacuum line 152 and the exhaust line 181 are connected in the process S6, in the process S7, even if the pressurized gas is supplied to the inside of the processing chamber 100, the processing chamber 100 can be made. The internal pressure is equal to the pressure inside the suction groove 151a. As a result, the pressure applied to the wafer W is uniform in the wafer surface, and the wafer W is not deflected downward in the suction groove 151a. Therefore, the wafer W and the plurality of wafers C can be bonded more appropriately.

Further, in the joining system 1, the loading/unloading station 2 can hold a plurality of wafers W, and the wafer W can be continuously transported from the loading/unloading station 2 to the processing station 3. Further, since the bonding system 1 has the bonding device 30 and the temperature adjusting device 31, the above-described processes S1 to S10 can be sequentially performed to continuously bond the wafer W and the plurality of wafers C. Further, in the bonding device 30, other processing may be performed in the other temperature adjusting device 31 while the predetermined processing is being performed. That is, a plurality of wafers W can be processed in parallel within the bonding system 1. Therefore, the bonding of the wafer W and the plurality of wafers C can be performed efficiently, and the productivity of the bonding process can be improved.

<4. Other Embodiments>

In the above embodiment, although it is in the engineering S7, the processing is performed. When the inside of the chamber 100 is pressurized, the pressure inside the suction chamber 151a and the inside of the processing chamber 100 are equal such that the vacuum line 152 communicates with the exhaust line 181, but the pressure is equal. , is not limited to this.

For example, the inside of the suction groove 151a may be actively supplied with pressurized gas. However, in this case, it is necessary to have another gas supply mechanism, and it is necessary to monitor the pressure inside the suction groove 151a and the pressure inside the processing chamber 100, so that the device configuration becomes large.

From this point of view, in the above embodiment, the connection line 190 and the valve 191 are provided only between the vacuum line 152 and the exhaust line 181, and in the item S7, the inside of the suction groove 151a and the inside of the processing chamber 100 can be made. The pressure is equal. Therefore, it is useful to simplify the device configuration.

Further, in the above-described embodiment, in the process S9, when the inside of the suction groove 151a and the inside of the processing chamber 100 are exhausted, it is not necessary to provide an individual exhaust mechanism, and a common exhaust device 183 can be used. Therefore, this view is also useful.

In the above embodiment, the suction groove 151a is formed on the upper surface of the mounting table 150 in an arbitrary arrangement. However, a plurality of suction ports (not shown) may be uniformly formed in the surface, that is, the mounting table 150. The top surface may also be porous. In this case, in the process S7, the wafer W and the plurality of wafers C can be more uniformly pressed in the wafer surface.

In the above embodiment, in the joining device 30, the moving mechanism 130 moves the upper chamber 101, but only the upper chamber The chamber 101 may be moved relative to the lower chamber 102. For example, the moving mechanism 130 can also move the lower chamber 102 or move both the upper chamber 101 and the lower chamber 102.

Further, the processing chamber 100 is divided into the upper chamber 101 and the lower chamber 102 in the vertical direction, but may be divided in the horizontal direction.

Further, although the mounting table 150 is provided with only the wafer W, the wafer W may be vacuum-adsorbed, for example, or the wafer W may be electrostatically adsorbed.

Further, in the bonding process of the above embodiment, the predetermined temperature (300 ° C) of the wafer W, the pressurization pressure inside the processing chamber 100 (0.9 MPa), and the pressurization time inside the processing chamber 100 ( Each of the 30 minutes) is exemplified and arbitrarily set according to various conditions.

Hereinabove, the preferred embodiments of the present invention have been described with reference to the accompanying drawings, but the invention is not limited thereto. It is obvious that various modifications and variations can be made without departing from the spirit and scope of the invention.

100‧‧‧Processing chamber

101‧‧‧ upper chamber

102‧‧‧lower chamber

103‧‧‧ sealing material

150‧‧‧mounting table

151‧‧‧ heating mechanism

152‧‧‧vacuum pipeline

153‧‧‧Station base

160‧‧‧lifting pin

170‧‧‧ gas supply mechanism

171‧‧‧ Gas Supply Department

172‧‧‧ gas supply pipeline

Claims (21)

A bonding apparatus for bonding a plurality of wafers disposed on a substrate to the substrate, the bonding apparatus having a processing chamber for accommodating a substrate, and a mounting table disposed inside the processing chamber and mounted a substrate; a heating mechanism provided on the mounting table to heat the substrate; and a gas supply unit disposed inside the processing chamber to supply a pressurized gas to the inside of the processing chamber, wherein the gas supply unit is configured to directly inject The flow rate of the pressurized gas to the substrate on the mounting table is less than the flow rate of the pressurized gas that is not directly injected onto the substrate on the mounting table, and the pressurized gas is supplied. The joining device according to the first aspect of the invention, wherein the gas supply unit is disposed above the mounting table, has a cylindrical shape with a lower surface, and supplies pressurized gas from the side peripheral surface. The bonding apparatus according to the first aspect of the invention, wherein the gas supply unit is disposed above the mounting table, has a spherical shape in which a plurality of gas supply holes are formed, and is directly injected onto the substrate on the mounting table. The flow impedance of the gas supply hole of the pressurized gas is greater than the flow impedance of the gas supply hole of the pressurized gas that is not directly injected onto the substrate on the mounting table. The joining device according to any one of claims 1 to 3, wherein the gas supply unit has a filter in which a plurality of gas flow holes are formed. The joining device according to any one of claims 1 to 3, wherein the gas supply unit is disposed above the mounting table, and a predetermined portion is formed between the gas supply unit and the processing chamber. gap. The joining device according to any one of claims 1 to 3, wherein the processing chamber has an upper chamber and a lower chamber divided in a vertical direction, and the upper chamber has a downward direction from above. The diameter is a conical shape that expands concentrically, and has a shape in which the inclined surface is convex inward in side view. A joining system comprising the joining device according to any one of claims 1 to 3, wherein the joining system has a processing station including the joining device and a temperature adjusting device, and the temperature adjusting device The temperature of the substrate after the plurality of wafers are bonded by the bonding device is adjusted; and the loading and unloading station can hold a plurality of substrates, and the substrate can be carried in and out of the processing station. A bonding method for bonding a plurality of wafers disposed on a substrate to the substrate, the bonding method comprising: a first project of loading a substrate into a processing chamber and sealing the processing chamber After the interior, the substrate is placed on a mounting table heated by a heating mechanism to a predetermined temperature; and In the second aspect, a pressurized gas is supplied to the inside of the processing chamber from a gas supply unit provided inside the processing chamber, and the inside of the processing chamber is pressurized to a predetermined pressure to bond the substrate to the plurality of wafers. In the second process, the flow rate of the pressurized gas directly injected from the gas supply unit onto the substrate on the mounting table is less than the pressure of the substrate that is not directly injected from the gas supply unit onto the mounting table. The flow of gas. The joining method of the eighth aspect of the invention, wherein the gas supply unit is disposed above the mounting table and has a cylindrical shape that is closed below, and in the second project, from the side of the gas supply unit The pressurized gas is supplied to the circumferential surface. The joining method of the eighth aspect of the invention, wherein the gas supply unit is disposed above the mounting table and has a spherical shape in which a plurality of gas supply holes are formed, and in the second project, the relative flow impedance The flow rate of the pressurized gas supplied from the larger gas supply hole and directly injected onto the substrate on the mounting table is less than that supplied from the gas supply hole having a relatively small flow resistance and is not directly injected to the mounting table. The flow rate of the pressurized gas on the upper substrate. The joining method according to any one of the above-mentioned claims, wherein in the second aspect, the pressurized gas is supplied through a filter provided in the gas supply unit. The joining method according to any one of claims 8 to 10, wherein the gas supply unit is disposed above the mounting table, and a predetermined portion is formed between the gas supply unit and the processing chamber. gap. A readable computer memory medium storing a program for controlling the bonding device by means of a bonding device for performing the bonding method according to any one of claims 8 to 10 The computer on the control unit operates. A bonding method for bonding a plurality of wafers disposed on a substrate to the substrate, the bonding method comprising: a first project of loading a substrate into a processing chamber and sealing the processing chamber After the inside, in the mounting table heated by the heating means to a predetermined temperature, the substrate is vacuumed by the vacuum line provided in the mounting table, and the second project is applied to the electrodes provided on the mounting table. After the substrate is electrostatically adsorbed by the voltage, the vacuuming of the substrate by the vacuum line is stopped; and in the third process, the pressurized gas is supplied from the gas supply mechanism to the inside of the processing chamber, and the inside of the processing chamber is pressurized. The substrate and the plurality of wafers are bonded to a predetermined pressure. In the third process, the pressure inside the vacuum line is equal to the pressure inside the processing chamber. For example, the joining method of claim 14 of the patent scope, wherein The vacuum line is connected to an exhaust line that exhausts the inside of the processing chamber via a valve, and after the second process and before the third process, the valve is opened to open the vacuum line and the exhaust gas. The pipeline is connected, and in the third process, the pressure inside the vacuum line is made equal to the pressure inside the processing chamber. The joining method of claim 15, wherein after the third process, the inside of the vacuum line and the inside of the processing chamber are discharged from the exhaust line in a state in which the valve is opened. gas. A readable computer memory medium storing a program for controlling the bonding device by means of a bonding device for performing the bonding method according to any one of claims 14 to 16. The computer on the control unit operates. A bonding apparatus for bonding a plurality of wafers disposed on a substrate to the substrate, the bonding apparatus having a processing chamber for accommodating a substrate, and a mounting table disposed inside the processing chamber for adsorption and retention a substrate; a heating mechanism disposed on the mounting table to heat the substrate; a vacuum line disposed on the mounting table to evacuate the substrate and adsorbed; and an electrode disposed on the mounting table for electrostatically adsorbing the substrate; and a gas supply mechanism The inside of the processing chamber supplies pressurized gas And a control unit that controls the bonding device to perform the first process of heating the substrate to the predetermined temperature after the substrate is carried into the processing chamber and sealed inside the processing chamber. In the mounting table, the substrate is vacuum-adsorbed by the vacuum line; in the second project, after applying a voltage to the electrode to electrostatically adsorb the substrate, the vacuuming of the substrate by the vacuum line is stopped; and the third process is performed from the gas. The supply mechanism supplies pressurized gas to the inside of the processing chamber, pressurizes the inside of the processing chamber to a predetermined pressure, and equalizes the pressure inside the vacuum line to the pressure inside the processing chamber, and bonds the substrate to A plurality of wafers. The joining device of claim 18, further comprising an exhaust line for exhausting the inside of the processing chamber, wherein the vacuum line and the exhaust line are connected via a valve, and the control unit is After the second project and before the third project, the valve is opened to communicate the vacuum line with the exhaust line, and in the third process, the pressure inside the vacuum line and the processing chamber are The internal pressure is equal, and the aforementioned engaging means is controlled. The joining device according to claim 19, wherein the control unit is configured to open the inside of the vacuum line and the treatment from the exhaust line in a state in which the valve is opened after the third process The inside of the chamber is exhausted to control the aforementioned joining device. A joint system, such as the application for patent scope 18~ A joining device according to any one of the preceding claims, wherein the joining system is characterized in that: the processing station is provided with the joining device and the temperature adjusting device, and the temperature adjusting device adjusts the joining of the plurality of wafers by the joining device The temperature of the substrate; and the loading/unloading station can hold a plurality of substrates, and the substrate is carried in and out of the processing station.