JP4633325B2 - Substrate bonding equipment - Google Patents

Substrate bonding equipment Download PDF

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JP4633325B2
JP4633325B2 JP2002293285A JP2002293285A JP4633325B2 JP 4633325 B2 JP4633325 B2 JP 4633325B2 JP 2002293285 A JP2002293285 A JP 2002293285A JP 2002293285 A JP2002293285 A JP 2002293285A JP 4633325 B2 JP4633325 B2 JP 4633325B2
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Prior art keywords
substrates
conductive plate
substrate
plate
bonding
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JP2004122216A (en
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泰三 阿部
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Ayumi Industry Co Ltd
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Ayumi Industry Co Ltd
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Description

【0001】
【発明の属する技術分野】
この発明は、基板の接合方法およびその装置に係り、詳しくは重ね合わせた複数枚の基板を平面加熱によって、熱変形のおそれがなく、均一に加圧、加熱接合することができる接合方法およびその装置に関するものである。
【0002】
【従来の技術】
基板の接合方法としては、従来から図2のように、基板a、bを載置する支持台82と、この支持台82の上方に所要の間隔を有して対向するように配置されている加重受け84と、上記所要の間隔を有して対向する支持台82と加重受け84の間の両側面側に縦方向に配置されている加熱源(ヒータ)86、86と、上記支持台82に載置された基板a、bの加熱接合時に基板a、bに加重を付与するために、ロッド90を介して上記加重受け84に昇降機構88が取り付けられた加熱接合装置が用いられている。
【0003】
そして、支持台82上に基板a、bを重ね合わせたのち、上方の加重受け84を昇降機構88により下降させ、基板a上に当接させて基板a、bを加圧し、同時に加熱源(ヒータ)86、86に通電することによって、基板a、bを接合する方法が行われている。また、上記において、支持台82にもロッド90aを介して昇降機構88aが取り付けられ、加熱接合の際に基板a、bを両面から加圧する方法も行われている。
【0004】
しかしながら、この接合においては、基板a、bに対する加熱が外周加熱源86、86からの間接加熱であり、しかも加熱室内全体に熱が放散するため、基板a、bの接合に要する温度に達するするまでに熱ロスが大きく、また基板の温度分布にもバラツキが生じて基板a、bの完全な接合には非常に長時間を要し、さらに、接合後の冷却時間も長くかかるという問題がある。
【0005】
また、基板同志の接合における上記のような問題を解消する方法として、近年、基板の全面を均一に加熱する方法や装置が提案されている(特許文献1および2)。
【0006】
【特許文献1】
特開平8−110504号公報 ([0007]、[0015])
【特許文献2】
特開平8−136937号公報 (請求項1、2、[0014])
【0007】
【発明が解決しようとする課題】
上記の開示文献は、何れも基板同志の接合における基板の全面を均一に加熱する方法として、通電により発熱する発熱体を用いるというものであるが、発熱体は、耐熱性を有するセラミック、石英、合成樹脂材等の絶縁物の薄板に炭素を印刷して面状発熱体の形態に形成したものをステンレスの薄板表面に貼り付け固定したものである。しかしながら、この発熱体における導電体は、絶縁物の薄板にカーボンをパターン状に印刷されたものであるため、発熱体が面状発熱体とはいっても、導電体のある部分とない部分では温度差があり、基板の全面を均一な温度で加熱することは困難である。また、高温(200℃程度)になると、絶縁物とヒータとなるカーボンの熱膨張差によって、ヒータが破損したり、あるいは加熱時に大きな加重をかけると、絶縁物が破損するなどの問題がある。
【0008】
この発明は、上述したような従来の技術の問題点を解消して、基板の全面に対して均一な温度分布をもって均一に加熱できるとともに、その際に均一な加重を付与することで短時間で基板の接合を行うことのできる方法と装置を提供するものである。
【0009】
【課題を解決するための手段】
本願の請求項1に係る接合装置は、重ね合わせた複数枚の基板を加熱、加圧によって接合する基板の接合装置であって、複数枚の基板を挟着する上下2枚の導電性板状体が所要の間隔を有して配置され、上記複数枚の基板を載置する下側の導電性板状体および該下側の導電性板状体に載置された上記複数枚の基板を押圧する上側の導電性板状体は、何れもその両端を電極に接続するとともに、絶縁体を介して加重受けに連接され、該加重受けには昇降機構が連接していることを特徴とするものである。
【0010】
請求項2に記載の発明は、上記請求項1において、導電性板状体がカーボン板状体であることを特徴とし、請求項3に記載の発明は、基板が金属、半導体、絶縁物からなり、それらの同種または異種の組合せであることを特徴とする。
【0012】
上記請求項に記載の発明によれば、接合しようとする少なくとも2枚の基板を挟着した上下の導電性の板状体に、加重機構により加重を加えつつ、電極より通電して該板状体を発熱させることにより、短い昇温時間で基板全面に均一に熱が伝播して温度分布が良好であり、また導電性の板状体を用いることにより、基板の熱変形も殆ど生ずることがなく、さらに導電性の板状体を用いることで、これがクッションの役目を果して、均一に加圧するこができるので、基板全面を均一に加圧接合することができるのである。
【0013】
【発明の実施の形態】
以下、本発明の実施の形態の一例を図に基づいて説明する。図1は、基板接合装置の概略をし、少なくとも2枚の重ね合わせた基板を加圧、加熱して接合するものである。図において、2は上側の導電性板状体であって、その両端に電極6、6が接続されている。また、4は上記上側の導電性板状体2と所要の間隔を有して配置されている下側の導電性板状体であって、同じように電極8、8がその両端に配置されている。
【0014】
10は、絶縁体12上に取り付けた加重受けで、昇降機構14によって昇降し、上側の導電性板状体2上に接触してこれを加圧することができるようになっている。接合される基板a、bが載置される下側の導電性板状体4には、その下面に絶縁体18を介して加重受け16が取り付けられてあり、昇降機構20によって作動するように構成されている。
【0015】
上述した接合装置の動作について説明すると、下側の導電性板状体4に対して上側の導電性板状体2を若干の間隔を有するように配置した状態で、下側の導電性板状体4上に接合しようとする基板a、bを重ね合わせて載置したのち、上側の導電性板状体2を下降させて、両板状体2、4で基板a、bを挟着する。その後、昇降機構14により絶縁体12が上側の導電性板状体2に当接するまで加重受け10を下降させる。次いで、加重受け10をさらに下降させると同時に、下側の導電性板状体4に当接している加重受け16をも昇降機構20で押し上げて両加重受け10、16で両板状体2、4を加圧しながら、両板状体2、4に電極6、8から電流を流し、両板状体2、4を発熱させることで基板a、bを加熱して接合させるのである。
【0016】
上記において、導電性板状体2、4としては、カーボン板あるいはステンレスのような導電性材料の板状体を用い、それらに通電して発熱させるので、熱容量が小さいために昇温時間が早いだけでなく、加圧によって板状体が基板全面を均一に押圧した状態で直接に面加熱接合するので、基板上の温度分布良好で基板の熱変形がなく、良好な接合基板を得ることができる。
【0017】
また、接合する基板としては、Ni、Sn、Cu、Be、Fe等の金属板状体、Si、Ge、Si化合物、GaAs、GaP、ITO(InSnO3 )等の半導体、Al2 3 、ZrO2 、SiNx 、SiO2 等の絶縁体(セラミックス)がある。この基板の接合は、図1においてはa、b2枚の接合の例を示したが、3枚以上であっても同様に接合することができる。そして、図1に示す装置による接合は、真空中、大気中何れの雰囲気であっても実施可能である。さらに、基板の間にシール材やスペーサが介在する場合であっても同じように実施することが可能である。加重受けの一方側に取り付けられている絶縁体は、発熱した熱の加重受けへの熱伝導を防ぐためのものであり、磁器、石英、アクリル樹脂やポリスチレン樹脂、などの板状体が用いられる。
【0018】
【発明の効果】
以上説明したように、この発明によれば、通電によって発熱するカーボン板状体のような導電性板状体を用いることによって、挟着した少なくとも2枚の基板の全面を短時間で均一に加熱できるとともに、この挟着によって加熱の際の基板への加圧も均一な分布加重で施すことができて良好な接合を可能とするのである。
【図面の簡単な説明】
【図1】本発明に係る接合装置の一実施例を示す概略正面図である。
【図2】従来の接合装置の概略図である。
【符号の説明】
a、b 基板
2、4 導電性板状体
6、8 電極
10、16 加重受け
12、18 絶縁体
14、20 昇降機構
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a substrate bonding method and apparatus, and more particularly, a bonding method capable of uniformly pressurizing and heat-bonding a plurality of stacked substrates without causing a thermal deformation by plane heating and the same. It relates to the device.
[0002]
[Prior art]
Conventionally, as shown in FIG. 2, the substrate is bonded to a support 82 on which the substrates a and b are placed, and is disposed above the support 82 so as to face each other with a predetermined interval. The load receiver 84, heating sources 86 and 86 arranged in the vertical direction on both side surfaces between the load support 84 and the support table 82 and the load support 84 facing each other with the required interval, and the support table 82. In order to apply a load to the substrates a and b when the substrates a and b placed on the substrate are heated and bonded, a heating and bonding apparatus in which an elevating mechanism 88 is attached to the weight receiver 84 via a rod 90 is used. .
[0003]
Then, after superimposing the substrates a and b on the support base 82, the upper load receiver 84 is lowered by the elevating mechanism 88 and is brought into contact with the substrate a to pressurize the substrates a and b, and at the same time, a heating source ( The heaters 86 and 86 are energized to join the substrates a and b. In the above, a lifting mechanism 88a is also attached to the support 82 via a rod 90a, and a method of pressing the substrates a and b from both sides at the time of heat bonding is also performed.
[0004]
However, in this bonding, the heating to the substrates a and b is indirect heating from the peripheral heating sources 86 and 86, and the heat is dissipated throughout the heating chamber, so that the temperature required for bonding the substrates a and b is reached. There is a problem that the heat loss is large until the temperature distribution of the substrates varies, and it takes a very long time to completely bond the substrates a and b, and the cooling time after the bonding also takes a long time. .
[0005]
In addition, as a method for solving the above-described problems in bonding between substrates, in recent years, methods and apparatuses for uniformly heating the entire surface of the substrate have been proposed (Patent Documents 1 and 2).
[0006]
[Patent Document 1]
JP-A-8-110504 ([0007], [0015])
[Patent Document 2]
JP-A-8-136937 (Claims 1, 2, [0014])
[0007]
[Problems to be solved by the invention]
In each of the above disclosure documents, a heating element that generates heat by energization is used as a method of uniformly heating the entire surface of the substrate in bonding between the substrates, but the heating element is composed of ceramic, quartz, A thin plate of insulating material such as a synthetic resin material printed with carbon and formed in the form of a planar heating element is attached and fixed to the surface of a stainless steel thin plate. However, since the conductor in this heating element is a thin plate of insulator printed with carbon in a pattern, the heating element is a planar heating element, but the temperature does not exist in the part with or without the conductor. There is a difference, and it is difficult to heat the entire surface of the substrate at a uniform temperature. In addition, when the temperature is high (about 200 ° C.), there is a problem that the heater is damaged due to a difference in thermal expansion between the insulator and the carbon serving as the heater, or that the insulator is damaged when a large load is applied during heating.
[0008]
The present invention solves the problems of the prior art as described above, and can uniformly heat the entire surface of the substrate with a uniform temperature distribution, and in that case, a uniform load is applied in a short time. A method and an apparatus capable of bonding substrates are provided.
[0009]
[Means for Solving the Problems]
A bonding apparatus according to claim 1 of the present application is a bonding apparatus for substrates that bonds a plurality of stacked substrates by heating and pressurizing, and has two upper and lower conductive plates sandwiching the plurality of substrates. A plurality of substrates placed on the lower conductive plate-like body, and a lower conductive plate-like body on which the plurality of substrates are placed; The upper conductive plate to be pressed has both ends connected to electrodes, and is connected to a weighted receiver via an insulator, and a lifting mechanism is connected to the weighted receiver. Is.
[0010]
A second aspect of the present invention is characterized in that, in the first aspect, the conductive plate-like body is a carbon plate-like body, and the third aspect of the invention is that the substrate is made of a metal, a semiconductor, or an insulator. It is characterized by being the same kind or different kind combination.
[0012]
According to the first aspect of the present invention, the upper and lower conductive plates sandwiching at least two substrates to be joined are energized from the electrodes while being applied with a weighting mechanism. By heating the substrate, heat is uniformly propagated over the entire surface of the substrate in a short heating time, and the temperature distribution is good. By using a conductive plate, the substrate is almost thermally deformed. In addition, by using a conductive plate-like body, this serves as a cushion and can be uniformly pressurized, so that the entire surface of the substrate can be uniformly pressure-bonded.
[0013]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, an example of an embodiment of the present invention will be described with reference to the drawings. FIG. 1 schematically shows a substrate bonding apparatus, in which at least two stacked substrates are bonded by pressing and heating. In the figure, reference numeral 2 denotes an upper conductive plate-like body, to which electrodes 6 are connected at both ends. Reference numeral 4 denotes a lower conductive plate-like member disposed with a predetermined distance from the upper conductive plate-like member 2, and the electrodes 8 and 8 are arranged at both ends in the same manner. ing.
[0014]
Reference numeral 10 denotes a weighted receiver attached on the insulator 12, which is moved up and down by an elevating mechanism 14 so as to contact and pressurize the upper conductive plate-like body 2. The lower conductive plate 4 on which the substrates a and b to be bonded are placed has a weight receiver 16 attached to its lower surface via an insulator 18 so that it can be operated by an elevating mechanism 20. It is configured.
[0015]
The operation of the above-described bonding apparatus will be described. In the state where the upper conductive plate 2 is disposed with a slight gap with respect to the lower conductive plate 4, the lower conductive plate After the substrates a and b to be bonded are superposed and placed on the body 4, the upper conductive plate 2 is lowered and the substrates a and b are sandwiched between the two plates 2 and 4. . Thereafter, the weight receiver 10 is lowered by the elevating mechanism 14 until the insulator 12 contacts the upper conductive plate-like body 2. Next, the load receiver 10 is further lowered, and at the same time, the load receiver 16 that is in contact with the lower conductive plate-like body 4 is also pushed up by the elevating mechanism 20 and the two plate-like bodies 2 are moved by the load receivers 10 and 16. While pressurizing 4, currents are passed from the electrodes 6, 8 to both the plate-like bodies 2, 4, and both the plate-like bodies 2, 4 are heated to heat and bond the substrates a, b.
[0016]
In the above, as the conductive plate-like bodies 2 and 4, a plate-like body made of a conductive material such as a carbon plate or stainless steel is used. In addition, since the plate-like body is directly surface-heat bonded in a state where the entire surface of the substrate is uniformly pressed by pressing, the temperature distribution on the substrate is good, the substrate is not thermally deformed, and a good bonded substrate can be obtained. it can.
[0017]
In addition, as a substrate to be joined, a metal plate such as Ni, Sn, Cu, Be, Fe, a semiconductor such as Si, Ge, Si compound, GaAs, GaP, ITO (InSnO 3 ), Al 2 O 3 , ZrO 2 , insulators (ceramics) such as SiN x and SiO 2 . In FIG. 1, an example of bonding a and b is shown for the bonding of the substrates. However, even if there are three or more, the bonding can be performed similarly. And the joining by the apparatus shown in FIG. 1 can be implemented in any atmosphere in a vacuum or air. Further, even when a sealant or a spacer is interposed between the substrates, the same implementation is possible. The insulator attached to one side of the weighted receiver is for preventing heat conduction of the generated heat to the weighted receiver, and a plate-like body such as porcelain, quartz, acrylic resin or polystyrene resin is used. .
[0018]
【The invention's effect】
As described above, according to the present invention, by using a conductive plate-like body such as a carbon plate-like body that generates heat by energization, the entire surfaces of at least two sandwiched substrates are uniformly heated in a short time. At the same time, this clamping allows the substrate to be pressurized during heating with a uniform distributed weight, thus enabling good bonding.
[Brief description of the drawings]
FIG. 1 is a schematic front view showing an embodiment of a joining apparatus according to the present invention.
FIG. 2 is a schematic view of a conventional joining apparatus.
[Explanation of symbols]
a, b Substrate 2, 4 Conductive plate-like body 6, 8 Electrode 10, 16 Weighted receptacle 12, 18 Insulator 14, 20 Lifting mechanism

Claims (3)

重ね合わせた複数枚の基板を加熱、加圧によって接合する基板の接合装置であって、
複数枚の基板を挟着する上下2枚の導電性板状体が所要の間隔を有して配置され、
上記複数枚の基板を載置する下側の導電性板状体および該下側の導電性板状体に載置された上記複数枚の基板を押圧する上側の導電性板状体は、何れもその両端を電極に接続して発熱するとともに、それぞれ絶縁体を介して前記下側の導電性板状体および前記上側の導電性板状体とは別体であって前記下側の導電性板状体および前記上側の導電性板状体とは独立に移動可能な加重受けに連接され、該加重受けには昇降機構が連接し
前記上側の導電性板状体は、前記加重受けとは独立して上下に移動可能である接合装置。
A substrate bonding apparatus for bonding a plurality of stacked substrates by heating and pressing,
Two upper and lower conductive plates sandwiching a plurality of substrates are arranged with a required interval,
The lower conductive plate on which the plurality of substrates are placed and the upper conductive plate that presses the plurality of substrates placed on the lower conductive plate are: also the rewritable heating by connecting the both ends to the electrode, the conductive of the lower a separate from each conductive plate-like body of the upper the lower conductive plate-like body and through the insulator The weight plate and the upper conductive plate are connected to a movable weight receiver that can move independently, and the weight receiver is connected to a lifting mechanism ,
The upper conductive plate-like member, the movable der Ru bonding apparatus vertically the weight receiving and independently.
導電性板状体がカーボン板状体であることを特徴とする請求項1に記載の接合装置。  The joining apparatus according to claim 1, wherein the conductive plate is a carbon plate. 基板が金属、半導体、絶縁物からなり、それらの同種または異種の組合せであることを特徴とする請求項1に記載の接合装置。  The bonding apparatus according to claim 1, wherein the substrate is made of a metal, a semiconductor, or an insulator, and is the same type or a combination of different types thereof.
JP2002293285A 2002-10-07 2002-10-07 Substrate bonding equipment Expired - Lifetime JP4633325B2 (en)

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JP2008335522A Division JP2009131902A (en) 2008-12-27 2008-12-27 Joining device for substrate

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JP5577652B2 (en) * 2009-09-01 2014-08-27 株式会社ニコン Bonding apparatus, bonding method, and manufacturing method of semiconductor device
TWI636843B (en) 2015-01-09 2018-10-01 東京威力科創股份有限公司 Joining apparatus, joining system, joining method, and computer storage
KR102459563B1 (en) 2015-01-09 2022-10-26 도쿄엘렉트론가부시키가이샤 Bonding apparatus, bonding system, bonding method and computer storage medium

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