TW201640111A - Qcm sensor to be cleaned by heating and use thereof in an ovpd coating system - Google Patents

Qcm sensor to be cleaned by heating and use thereof in an ovpd coating system Download PDF

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TW201640111A
TW201640111A TW105108458A TW105108458A TW201640111A TW 201640111 A TW201640111 A TW 201640111A TW 105108458 A TW105108458 A TW 105108458A TW 105108458 A TW105108458 A TW 105108458A TW 201640111 A TW201640111 A TW 201640111A
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sensor
active surface
steam
vibrating body
concentration
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TW105108458A
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TWI709748B (en
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Birgit Irmgard Beccard
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Aixtron Se
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/02Analysing fluids
    • G01N29/036Analysing fluids by measuring frequency or resonance of acoustic waves
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/02Analysing fluids
    • G01N29/022Fluid sensors based on microsensors, e.g. quartz crystal-microbalance [QCM], surface acoustic wave [SAW] devices, tuning forks, cantilevers, flexural plate wave [FPW] devices
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2291/00Indexing codes associated with group G01N29/00
    • G01N2291/02Indexing codes associated with the analysed material
    • G01N2291/021Gases
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2291/00Indexing codes associated with group G01N29/00
    • G01N2291/02Indexing codes associated with the analysed material
    • G01N2291/025Change of phase or condition
    • G01N2291/0256Adsorption, desorption, surface mass change, e.g. on biosensors
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2291/00Indexing codes associated with group G01N29/00
    • G01N2291/02Indexing codes associated with the analysed material
    • G01N2291/028Material parameters
    • G01N2291/02809Concentration of a compound, e.g. measured by a surface mass change

Abstract

The invention relates to a device for determining the concentration of a vapor in a volume (2) and controlling the mass flow of the vapor conveyed through the volume (2) by a carrier gas, wherein the volume (2) can be heated to a temperature above the condensation temperature of the vapor by means of a heating apparatus (8), said device comprising a sensor (1) which provides a sensor signal dependent on the concentration or the partial pressure of the vapor, wherein the sensor (1) has an oscillatory body (17), which can be made to oscillate and the oscillation frequency of which is influenced by a mass accumulation formed on an active surface (18) of the oscillatory body (17) by the condensed vapor, and comprising an evaluating apparatus, which determines the concentration or the partial pressure from the change in the oscillator frequency over time. In order to be able to clean the sensor, the active surface (18) according to the invention is electrically conductive and has electrical contacts (19, 20) for introducing an electrical heating current (I), by means of which the active surface (18) can be heated.

Description

可加熱清潔之QCM感測器及其在OVPD塗佈系統中之應用 Heatable and cleanable QCM sensor and its application in OVPD coating system

本發明係有關於一種裝置,其用於測定一容積內之蒸汽的濃度或分壓,特別用於測定或控制該由載氣運送過該容積之蒸汽的質量流量,其中該容積可被加熱裝置加熱至高於該蒸汽之冷凝溫度的溫度,包括:感測器,該感測器提供與該蒸汽之濃度或分壓相關的感測器信號,其中該感測器具有可振盪之振動體,該振動體之振盪頻率受該振動體之活性面上由冷凝蒸汽形成的質量累積影響;及分析裝置,該分析裝置根據該振盪器頻率與時間相關的變化獲得該濃度或該分壓。 The present invention relates to a device for determining the concentration or partial pressure of steam within a volume, in particular for determining or controlling the mass flow of steam transported by the carrier gas through the volume, wherein the volume can be heated Heating to a temperature above the condensation temperature of the steam, comprising: a sensor providing a sensor signal associated with the concentration or partial pressure of the vapor, wherein the sensor has an oscillatable vibrating body, The oscillation frequency of the vibrating body is affected by the mass accumulation formed by the condensed vapor on the active surface of the vibrating body; and an analyzing device that obtains the concentration or the partial pressure according to the time-dependent change of the oscillator frequency.

此外,本發明係有關於一種感測器之應用以及一種清潔OVPD塗佈系統中之感測器之活性面的方法。 Furthermore, the present invention relates to the use of a sensor and a method of cleaning the active surface of a sensor in an OVPD coating system.

「高溫微量天平感測器晶體(High Temperature Microbalance Sensor Crystal)」在市場上有售。該感測器應用於PVD、CVD、ALD及OLED之沉積裝置。由GaPO4(磷酸鎵)構成之單晶體具有壓電特性且可藉由施加交流電壓而發生約5.8Mhz之振盪。由該晶體形成之振動體具有面向蒸汽之活性面,蒸汽可在該活性面上冷凝。冷凝物/沉積物形成一層且進而形成質量累積,該質量累積對振動體之振動行為有影響。具體而言,振動體頻率發生變化。根據單位時間內之頻率變化,可推斷出活性面之前的氣相蒸汽 濃度,以便能測定蒸汽分壓。 "High Temperature Microbalance Sensor Crystal" is commercially available. The sensor is applied to deposition devices of PVD, CVD, ALD and OLED. A single crystal composed of GaPO 4 (gallium phosphate) has piezoelectric characteristics and can oscillate by about 5.8 Mhz by applying an alternating voltage. The vibrating body formed by the crystal has an active surface facing the steam on which the vapor can be condensed. The condensate/sediment forms a layer and thus a mass buildup which has an effect on the vibration behavior of the vibrating body. Specifically, the frequency of the vibrating body changes. Based on the frequency change per unit time, the vapor phase vapor concentration before the active surface can be inferred so that the vapor partial pressure can be determined.

關於QCM感測器及其在OVPD方法中之應用的描述見於DE 10 2014 102 484。 A description of the QCM sensor and its application in the OVPD method is found in DE 10 2014 102 484.

DE 1 598 401描述一種壓電晶體,該晶體上成形有電加熱元件。習知將帶有可加熱之感測器面的QCM感測器用於脫附(Desorptionsstudien),且其間將溫度加熱至120℃。 DE 1 598 401 describes a piezoelectric crystal on which an electrical heating element is formed. It is customary to use a QCM sensor with a heatable sensor face for desorption and to heat the temperature to 120 °C.

本發明亦有關於一種如DE 10 2011 051 931 A1所描述之OLED塗佈裝置。在沉積反應器內設有基座,其表面被冷卻且承載待塗佈之基板。載氣-蒸汽混合物自進氣機構被送入製程室,該進氣機構被加熱至高於蒸汽冷凝溫度之溫度。蒸汽在基板表面冷凝,其中,層的品質一方面與製程室內之蒸汽的濃度(分壓)相關,另一方面亦與基板表面溫度相關。實施沉積OLED層於基板上之方法時,最好使蒸汽以時間上恆定之流率流入製程室。在蒸汽發生器中藉由加熱固態或液態起始材料來產生蒸汽。該起始材料可以氣膠形式被送入蒸發容積。用於將蒸汽送入製程室之載氣通過該蒸發容積。該載氣由質量流量控制器送入蒸發裝置之管道系統。透過第二感測器獲得受蒸汽之濃度(分壓)影響的感測器信號。 The invention also relates to an OLED coating device as described in DE 10 2011 051 931 A1. A susceptor is provided in the deposition reactor, the surface of which is cooled and carries the substrate to be coated. The carrier gas-steam mixture is fed from the intake mechanism to the process chamber, which is heated to a temperature above the vapor condensation temperature. The vapor condenses on the surface of the substrate, wherein the quality of the layer is related on the one hand to the concentration of the vapor in the process chamber (partial pressure) and on the other hand to the surface temperature of the substrate. When carrying out the method of depositing an OLED layer on a substrate, it is preferred to allow steam to flow into the process chamber at a time constant flow rate. Steam is produced in a steam generator by heating a solid or liquid starting material. The starting material can be fed to the evaporation volume in the form of a gas gel. A carrier gas for feeding steam into the process chamber passes through the evaporation volume. The carrier gas is fed to the piping system of the evaporation unit by the mass flow controller. A sensor signal affected by the concentration (partial pressure) of the vapor is obtained through the second sensor.

WO 2010/130775 A1、US 2006/0179918 A1及US 8,215,171 B1揭露所謂之QCM(Quartz crystal microbalance,石英晶體微量天平)感測器。此等感測器應用於真空蒸發裝置,即所謂的VTE(Vacuum thermal evaporation,真空熱蒸發)系統。QCM感測器由石英晶體構成,該石英晶體在其諧振頻率下受激勵而發生振動。例如蒸發含金屬(例如金)物體或者蒸發含非金屬物體時,一定蒸汽量在石英所形成之振動體的表面區段冷凝。該振動體在先前技 術中保持約50℃之溫度。實施塗佈程序期間,振動體表面生長冷凝物層。此附加質量使振動體失諧,致使頻率隨時間變化。此結果係根據所謂的Sauerbrey方程式而得到。在該QCM感測器之習知應用中,塗佈程序在此振盪器頻率達到預定終值時結束。 A so-called QCM (Quartz crystal microbalance) sensor is disclosed in WO 2010/130775 A1, US 2006/0179918 A1 and US Pat. No. 8,215,171 B1. These sensors are applied to a vacuum evaporation device, a so-called VTE (Vacuum thermal evaporation) system. The QCM sensor consists of a quartz crystal that is excited to vibrate at its resonant frequency. For example, when evaporating a metal-containing (e.g., gold) object or evaporating a non-metallic object, a certain amount of vapor condenses in the surface portion of the vibrating body formed by the quartz. The vibrating body is in the prior art The temperature was maintained at about 50 °C during the operation. During the coating procedure, a condensate layer is grown on the surface of the vibrating body. This additional mass detunes the vibrating body, causing the frequency to change over time. This result is based on the so-called Sauerbrey equation. In a conventional application of the QCM sensor, the coating procedure ends when the oscillator frequency reaches a predetermined final value.

實施過一定次數之塗佈程序後須更換或清潔感測器以保持其振動能力,因為沉積於石英晶體上之層起阻尼作用,會影響頻率及振幅。 After a certain number of coating procedures have been applied, the sensor must be replaced or cleaned to maintain its ability to vibrate because the layer deposited on the quartz crystal acts as a damping effect that affects frequency and amplitude.

為了自振動體之活性面移除沉積物或冷凝物,有人提出將振動體加熱至高於該冷凝物或沉積物之蒸發溫度的溫度。相關加熱裝置具有加熱管,該加熱管不僅須加熱振動體,亦須加熱保持該振動體之保持裝置。故,清潔程序極為耗時。在不良條件下,清潔振動體之活性面所需要的時間可能超過塗佈程序所需之時間。 In order to remove deposits or condensate from the active side of the vibrating body, it has been proposed to heat the vibrating body to a temperature above the evaporating temperature of the condensate or deposit. The associated heating device has a heating tube that not only heats the vibrating body but also heats the holding device that holds the vibrating body. Therefore, the cleaning process is extremely time consuming. Under poor conditions, the time required to clean the active side of the vibrating body may exceed the time required for the coating procedure.

本發明之目的在於改良塗佈裝置之效率,尤其在於縮短振動體之活性表面的清潔用時。 It is an object of the present invention to improve the efficiency of a coating apparatus, particularly to reduce the cleaning time of the active surface of the vibrating body.

該目的透過申請專利範圍所給出之發明而達成。 This object is achieved by the invention given in the scope of the patent application.

該塗佈裝置具有QCM感測器作為感測器,該QCM感測器具有可振盪之振動體,其振盪頻率受該振動體之表面上由冷凝蒸汽形成的質量累積(特別是層)影響。該振盪器頻率一方面與該層之厚度相關,另一方面亦與該層之品質即物理及化學特性相關。該感測器安裝於氣體輸送管線之一容積內,特別是有機起始材料之蒸汽由載氣流運送過該氣體輸送管線。根據該振動體所形成之振盪器之諧振頻率與時間相關的變化率可推導出該輸送管線容積內部的蒸汽濃度。根據被受控送入該容積且通過該輸送管線容積之載氣 的流率,以及根據所獲得的蒸汽濃度或所獲得的分壓,可獲得蒸汽進入塗佈裝置之流率(質量/時間)。由晶體構成之振動體的表面上在數分鐘內便會形成質量累積,若不預先清除該質量累積,則無法繼續使用感測器。先前技術大約以30分鐘之時長將整個晶體加熱至約350℃之溫度。而後須再度冷卻該晶體。需要提供大量的熱(能量)。需要使此部分熱穿過晶體並到達覆有待蒸發之層的活性表面。 The coating apparatus has a QCM sensor having a oscillatable vibrating body whose oscillation frequency is affected by mass accumulation (particularly layer) formed by condensed steam on the surface of the vibrating body. The oscillator frequency is related on the one hand to the thickness of the layer and on the other hand to the quality of the layer, ie the physical and chemical properties. The sensor is mounted in a volume of a gas delivery line, and in particular the vapor of the organic starting material is carried by the carrier gas stream through the gas delivery line. The vapor concentration inside the volume of the transfer line can be derived from the rate of change of the resonant frequency of the oscillator formed by the vibrating body. According to the carrier gas that is controlled to be fed into the volume and through the volume of the transfer line The flow rate, and depending on the vapor concentration obtained or the partial pressure obtained, the flow rate (mass/time) of steam entering the coating device can be obtained. Mass accumulation occurs in a few minutes on the surface of the vibrating body composed of crystals, and the sensor cannot be used unless the mass accumulation is removed in advance. The prior art heated the entire crystal to a temperature of about 350 ° C for about 30 minutes. The crystal must then be cooled again. A large amount of heat (energy) needs to be provided. It is desirable to heat this portion through the crystal and to the active surface overlying the layer to be evaporated.

根據本發明,該振動體具有活性面,該活性面導電且可傳導加熱電流,故僅需加熱該振動體之直接鄰接該表面的層,便可使活性面達到一個能蒸發該沉積物或冷凝物之溫度。該導電面占一稜柱體或圓柱體之由邊緣限定之平表面的至少90%,便已足夠。該導電面可由該振動體之表面的導電塗層形成。該等電極/接點較佳設於該面之邊緣上,即以最大程度相互遠離設置。該活性面可具有圓形輪廓。但其亦可具有非圓形輪廓。在此情況下,在該表面上的兩相對邊緣點間存在最大長度之距離。該等接點相互隔開的距離較佳超過此距離之長度的一半。若該振動體為一長條形物體,則該等電極/接點較佳設於窄面上。但其亦可設於寬面上。該等電極/接點間之電阻較佳介於0.5歐姆與5歐姆之間。該等電極/接點透過饋電線連接電能源,該電能源所產生之電流可通過該導電層以加熱該活性面。清潔該感測器所需之能量遠低於須將整個振動體及保持該振動體之保持裝置加熱的前述方法。僅需加熱該活性面及該振動體之直接鄰接該活性面的容積區段。該塗層可由金屬(例如金)構成。該等接點可熔合或壓製或黏接於該塗層上。該經塗佈之表面面向蒸汽。若大致僅加熱該表面而非整個晶體(例如石英體),則特別有益。加熱時間及接下來的冷卻時間皆處於1-2分鐘範圍。冷卻時,此部 分熱可自經加熱之表面邊界層進入振動體。按本發明進行構建之裝置不僅可用於塗佈裝置之輸送管線中,該裝置亦可直接用於該塗佈裝置以測量蒸汽濃度或蒸汽分壓。其間,該振動體之特別經塗佈的活性表面面向沉積程序,例如面向載有基板之基座。 According to the present invention, the vibrating body has an active surface which is electrically conductive and can conduct a heating current, so that only the layer directly adjacent to the surface of the vibrating body needs to be heated, so that the active surface can be evaporated to the deposit or condensed. The temperature of the object. It is sufficient that the conductive surface occupies at least 90% of the flat surface defined by the edges of a prism or cylinder. The conductive surface may be formed by a conductive coating on the surface of the vibrating body. Preferably, the electrodes/contacts are provided on the edge of the face, i.e., at a maximum extent away from each other. The active surface can have a circular contour. However, it can also have a non-circular profile. In this case, there is a maximum length distance between the two opposite edge points on the surface. The distance separating the contacts is preferably more than half the length of the distance. If the vibrating body is an elongated object, the electrodes/contacts are preferably provided on a narrow surface. But it can also be set on a wide surface. The resistance between the electrodes/contacts is preferably between 0.5 ohms and 5 ohms. The electrodes/contacts are connected to the electrical energy source via a feed line through which current generated by the electrical energy source can heat the active surface. The energy required to clean the sensor is much lower than the aforementioned method of heating the entire vibrating body and the holding device holding the vibrating body. It is only necessary to heat the active surface and the volume section of the vibrating body directly adjacent to the active surface. The coating can be composed of a metal such as gold. The contacts can be fused or pressed or bonded to the coating. The coated surface faces the steam. It is particularly beneficial if the surface is heated only substantially, rather than the entire crystal, such as a quartz body. Both the heating time and the subsequent cooling time are in the range of 1-2 minutes. When cooling, this part The heat separation can enter the vibrating body from the heated surface boundary layer. The apparatus constructed in accordance with the present invention can be used not only in the transfer line of the coating apparatus, but also directly in the coating apparatus to measure the vapor concentration or the vapor partial pressure. In the meantime, the specially coated active surface of the vibrating body faces the deposition process, for example facing the susceptor carrying the substrate.

本發明特別有關於前述感測器在OVPD塗佈裝置之供氣系統中的應用,該OVPD塗佈裝置具有沉積反應器,該沉積反應器中設有可冷卻之基座以容置一或數個待塗佈之基板。關於此種供氣系統之技術方案,請參閱DE 10 2014 102 484之全部揭露內容,該案的內容為本申請所揭露內容之組成部分。 The invention particularly relates to the use of the aforementioned sensor in a gas supply system of an OVPD coating apparatus, the OVPD coating apparatus having a deposition reactor having a chillable susceptor for accommodating one or several The substrate to be coated. With regard to the technical solution of such a gas supply system, please refer to the entire disclosure of DE 10 2014 102 484, the content of which is an integral part of the disclosure of this application.

以下結合所附圖式闡述本發明之實施例。 Embodiments of the invention are described below in conjunction with the drawings.

1‧‧‧感測器 1‧‧‧ sensor

2‧‧‧容積 2‧‧‧ volume

3‧‧‧蒸發元件 3‧‧‧Evaporation components

4‧‧‧噴射器 4‧‧‧Injector

5‧‧‧氣膠發生器 5‧‧‧ gas gel generator

6‧‧‧控制器 6‧‧‧ Controller

7‧‧‧質量流量控制器 7‧‧‧Quality Flow Controller

8‧‧‧加熱裝置 8‧‧‧ heating device

9‧‧‧沉積反應器 9‧‧‧Deposition reactor

10‧‧‧進氣機構 10‧‧‧Air intake mechanism

11‧‧‧基板 11‧‧‧Substrate

12‧‧‧基座 12‧‧‧ Pedestal

13‧‧‧輸送管線 13‧‧‧Transportation pipeline

14‧‧‧蒸汽饋送管線 14‧‧‧Steam feed line

15‧‧‧冷卻通道 15‧‧‧Cooling channel

16‧‧‧排氣孔 16‧‧‧ venting holes

17‧‧‧晶體 17‧‧‧ crystal

18‧‧‧活性表面 18‧‧‧Active surface

19‧‧‧電接點 19‧‧‧Electrical contacts

20‧‧‧電接點 20‧‧‧Electrical contacts

21‧‧‧電流源 21‧‧‧current source

22‧‧‧塗層 22‧‧‧ Coating

23‧‧‧電極 23‧‧‧Electrode

24‧‧‧電極 24‧‧‧ electrodes

25‧‧‧邊緣 25‧‧‧ edge

I‧‧‧加熱電流 I‧‧‧heating current

圖1為OLED塗佈裝置之結構示意圖;圖2為感測器1之俯視圖;圖3為沿圖2中III-III線所截取之剖面圖;及圖4為第二實施例對應於圖3之視圖。 1 is a schematic structural view of an OLED coating apparatus; FIG. 2 is a plan view of the sensor 1; FIG. 3 is a cross-sectional view taken along line III-III of FIG. 2; and FIG. 4 is a second embodiment corresponding to FIG. The view.

圖1所示之塗佈裝置具有沉積反應器9。該沉積反應器為一氣密容器,其內設有可將總壓力設為0.1mbar至100mbar之製程室。具體可在該製程室設置0.1mbar至10mbar之控制總壓力。沉積反應器9內部設有基座12,該基座具有可通冷卻液之冷卻通道15,以便使基座12保持明確的沉積溫度。基座頂面平放有待塗佈之基板11。 The coating apparatus shown in Fig. 1 has a deposition reactor 9. The deposition reactor is an airtight container having a process chamber capable of setting the total pressure to 0.1 mbar to 100 mbar. Specifically, a total control pressure of 0.1 mbar to 10 mbar can be set in the process chamber. The interior of the deposition reactor 9 is provided with a susceptor 12 having a cooling passage 15 through which a coolant can be passed to maintain the susceptor 12 at a definite deposition temperature. The substrate 11 to be coated is laid flat on the top surface of the base.

基座12上方設有蓮蓬頭式進氣機構10,該進氣機構 可將蒸汽-載氣混合物導入設於基座12與進氣機構10間之製程室。進氣機構10保持高於蒸汽冷凝溫度之溫度,從而使得氣態起始材料被送入製程室且蒸汽可在基板11上冷凝。蒸汽之冷凝物形成OLED層。 A showerhead type air intake mechanism 10 is disposed above the base 12, and the air intake mechanism The vapor-carrier gas mixture can be introduced into a process chamber disposed between the susceptor 12 and the air intake mechanism 10. The intake mechanism 10 maintains a temperature above the vapor condensation temperature such that the gaseous starting material is fed into the process chamber and the vapor can condense on the substrate 11. The condensate of steam forms an OLED layer.

進氣機構10由蒸汽饋送管線14提供載氣-蒸汽混合物,該載氣-蒸汽混合物產生於蒸汽發生器2、3、4。加熱裝置8使蒸汽發生器2、3、4及蒸汽饋送管線14保持一溫度,此溫度高於蒸汽冷凝溫度,但低於蒸汽分解溫度。 The intake mechanism 10 provides a carrier gas-steam mixture from a steam feed line 14, which is produced in the steam generators 2, 3, 4. The heating device 8 maintains the steam generators 2, 3, 4 and the steam feed line 14 at a temperature above the steam condensation temperature but below the steam decomposition temperature.

藉由質量流量控制器7將明確流量之載氣(例如氮氣)透過形成一入口之輸送管線13導入蒸發器2、3、4。 A carrier gas (e.g., nitrogen) of a clear flow rate is introduced into the evaporators 2, 3, 4 through the mass flow controller 7 through a transfer line 13 forming an inlet.

在實施例中,該蒸發器具有噴射室,噴射器4通入該噴射室以將待蒸發之固體或待蒸發之液體以氣膠形式送入該噴射室。該氣膠進入高溫蒸發元件3並於該處蒸發。該液體或固體來自於儲存容器,由輸送裝置運送。噴射器4可為氣膠發生器5之組成部分,該氣膠發生器將該固體或液體以氣膠形式送入載氣流。待蒸發之固態或液態起始材料的輸送率或載氣之質量流量由控制器6規定。 In an embodiment, the evaporator has a spray chamber into which the sprayer 4 opens to feed the solid to be evaporated or the liquid to be evaporated into the spray chamber in the form of a gas gel. The gas gel enters the high temperature evaporation element 3 where it evaporates. The liquid or solid is from a storage container and is transported by a conveyor. The ejector 4 can be an integral part of the guttata generator 5 which delivers the solid or liquid as a gas gel into the carrier gas stream. The delivery rate of the solid or liquid starting material to be evaporated or the mass flow rate of the carrier gas is specified by the controller 6.

在蒸發元件3中為待蒸發之固體或待蒸發之液體(特別是所產生之氣膠)提供熱量以改變該固體或液體之聚集態。起始材料以由載氣運送之蒸汽形式經形成一出口之管線14離開蒸發元件3。起始材料到達設有感測元件1之容積2,該感測元件能測定容積2內部之蒸汽的質量濃度或分壓。由此,根據質量流量控制器7中所設定之載氣質量流量可測定通過連接於容積2後面之管線14(即出口管線)之蒸汽的質量流量。 In the evaporation element 3, heat is supplied to the solid to be evaporated or the liquid to be evaporated, in particular the produced gas gel, to change the state of aggregation of the solid or liquid. The starting material exits the evaporation element 3 via a line 14 forming an outlet in the form of steam carried by the carrier gas. The starting material reaches a volume 2 provided with a sensing element 1, which is capable of determining the mass concentration or partial pressure of the vapor inside the volume 2. Thus, the mass flow rate of the steam passing through the line 14 (i.e., the outlet line) connected to the volume 2 can be determined based on the carrier gas mass flow rate set in the mass flow controller 7.

控制器6獲得感測器1之感測器信號或者透過測量值變換而由該感測器信號1獲得且與蒸汽質量流量成比例之測量信號作為輸入變數。 The controller 6 obtains the sensor signal of the sensor 1 or a measurement signal obtained by the sensor signal 1 and proportional to the steam mass flow as an input variable.

藉由改變待蒸發之固體或待蒸發之液體的輸送率或者藉由改變待蒸發之材料的蒸發溫度並改變質量流量控制器7中所提供之質量流量值,可調節蒸汽質量流量並使其在時間上保持恆定。 The steam mass flow can be adjusted and adjusted by changing the delivery rate of the solid to be evaporated or the liquid to be evaporated or by changing the evaporation temperature of the material to be evaporated and changing the mass flow value provided in the mass flow controller 7. Keep it constant in time.

然而,感測器1亦可應用於沉積反應器9,以便測定排氣孔16與基板11間之容積內部的蒸汽濃度或蒸汽分壓。 However, the sensor 1 can also be applied to the deposition reactor 9 to determine the vapor concentration or vapor partial pressure inside the volume between the vent hole 16 and the substrate 11.

圖2及圖3示出感測器1之第一實施例。感測器1具有晶體17,該晶體形成振動體。在晶體17之底面設有電極23、24,該等電極連接於振盪裝置以促使晶體17進行約5.8Mhz之振動。該晶體為壓電晶體,特別是磷酸鎵。電極23、24上被施加交流電壓,藉以激勵該壓電晶體發生振動。 2 and 3 show a first embodiment of the sensor 1. The sensor 1 has a crystal 17 which forms a vibrating body. Electrodes 23, 24 are provided on the bottom surface of the crystal 17, and the electrodes are connected to an oscillating means to cause the crystal 17 to vibrate at about 5.8 Mhz. The crystal is a piezoelectric crystal, in particular gallium phosphate. An alternating voltage is applied to the electrodes 23, 24 to excite the piezoelectric crystal to vibrate.

晶體17呈圓柱形,直徑為10mm至15mm,厚度為0.1mm至0.5mm。在晶體17與接點23、24相對之寬面上塗佈有導電層22。該導電層可為金屬層。導電塗層22覆蓋該表面的至少90%,較佳覆蓋整個表面。塗層22較佳延伸至晶體17之端面的邊緣25。 The crystal 17 has a cylindrical shape with a diameter of 10 mm to 15 mm and a thickness of 0.1 mm to 0.5 mm. A conductive layer 22 is coated on the opposite side of the crystal 17 and the contacts 23, 24. The conductive layer can be a metal layer. The conductive coating 22 covers at least 90% of the surface, preferably covering the entire surface. The coating 22 preferably extends to the edge 25 of the end face of the crystal 17.

塗層22具有自由表面18。該表面為感測器1曝露於蒸汽之活性表面。蒸汽可在活性表面18上冷凝,以便對感測器1之振盪頻率施加影響。 The coating 22 has a free surface 18. This surface is the active surface of the sensor 1 exposed to steam. Steam can condense on the active surface 18 to exert an influence on the oscillation frequency of the sensor 1.

設有將感測器1之活性表面18選擇性加熱至清潔溫度(例如350℃)之措施。但亦可將活性表面18加熱至450℃甚或最 高達850℃之溫度。此會導致活性表面18上的沉積物蒸發。 A measure is provided to selectively heat the active surface 18 of the sensor 1 to a cleaning temperature (e.g., 350 ° C). However, the active surface 18 can also be heated to 450 ° C or even the most Up to 850 ° C temperature. This can result in evaporation of deposits on the active surface 18.

以電的方式提供加熱活性表面18所需之能量。為此,在塗層22上相互遠離之位置上設有如圖2所示之電接點19、20。電接點19、20以最大程度相互遠離設置。因此,該等電接點較佳位於邊緣25上。圖2示出兩個相互平行分佈之接點帶19、20。然而,接點帶19、20較佳亦直接沿邊緣25分佈,即呈弧形。 The energy required to heat the active surface 18 is provided electrically. To this end, electrical contacts 19, 20 as shown in Fig. 2 are provided at locations remote from each other on the coating 22. The electrical contacts 19, 20 are disposed at a maximum distance from one another. Therefore, the electrical contacts are preferably located on the edge 25. Figure 2 shows two contact strips 19, 20 which are distributed parallel to one another. However, the contact strips 19, 20 are preferably also distributed directly along the edge 25, i.e., in an arc shape.

電接點19、20透過饋電線連接電能源21,該電能源能產生加熱電流I。 The electrical contacts 19, 20 are connected to the electrical energy source 21 via a feed line, which generates a heating current I.

加熱電流I透過電接點19、20被饋入導電層22。導電層22具有介於0.5歐姆與5歐姆間之電阻,使得接點19、20上出現電壓下降。由此,電能在層22內部轉化為熱,使得活性表面18被加熱,從而可將沉積物蒸發。 The heating current I is fed into the conductive layer 22 through the electrical contacts 19, 20. Conductive layer 22 has a resistance between 0.5 ohms and 5 ohms such that a voltage drop occurs across contacts 19, 20. Thereby, electrical energy is converted into heat inside the layer 22, so that the active surface 18 is heated, so that the deposit can be evaporated.

若僅將感測器1(特別是晶體17)之直接鄰接活性表面18的容積區域加熱,則特別有益。當加熱時間較短時,晶體17內部形成較陡的溫度梯度,完成熱能提供後,該溫度梯度使得經加熱之活性表面18能快速冷卻。 It is particularly advantageous if only the volume area of the sensor 1 (especially the crystal 17) directly adjoins the active surface 18 is heated. When the heating time is short, a relatively steep temperature gradient is formed inside the crystal 17, which allows the heated active surface 18 to cool rapidly after the completion of the thermal energy supply.

若晶體17具有適當的導電能力,便不必額外塗覆導電層22。電熱能可透過合適的接點19、20被直接送入振動體17。 If the crystal 17 has an appropriate conductivity, it is not necessary to additionally coat the conductive layer 22. The electrothermal energy can be directly supplied to the vibrating body 17 through the appropriate contacts 19, 20.

圖4示出本發明之第二實施例,其與第一實施例之區別大致僅在於電接點19、20之配置方式。在此,電接點19、20沿振動體17之端面的邊緣25延伸,該端面上完整塗佈有導電塗層22。接點19、20沿圓形邊緣25呈弧形例如延伸90°之角度。該等接點局部亦沿振動體17之鄰接該端面的圓柱面延伸。 Fig. 4 shows a second embodiment of the invention, which differs from the first embodiment only in the arrangement of the electrical contacts 19, 20. Here, the electrical contacts 19, 20 extend along the edge 25 of the end face of the vibrating body 17, which is completely coated with a conductive coating 22. The joints 19, 20 are curved along the circular edge 25, for example at an angle of 90[deg.]. The contacts also partially extend along the cylindrical surface of the vibrating body 17 adjacent to the end face.

在本發明之方法及本發明之裝置中,部分亦採用熱運 行(HQCM)之QCM(Quartz crystal monitor,石英晶體監控器)的活性表面藉由局部加熱該活性面而達到一溫度,在此溫度下,沉積於該活性表面上之沉積物被清除。此點係藉由將電流選擇性導入振動體17之直接鄰接該活性面的容積區域或導入塗覆於振動體17上之導電層22而實現。 In the method of the present invention and the apparatus of the present invention, part of the heat transfer is also employed. The active surface of the QCM (Quartz crystal monitor) of HQCM reaches a temperature by locally heating the active surface, at which temperature the deposit deposited on the active surface is removed. This is achieved by selectively introducing a current into the volume region of the vibrating body 17 directly adjacent to the active surface or into the conductive layer 22 coated on the vibrating body 17.

若振動體17具有相應的導電能力,則被加熱容積侷限於直接鄰接活性面18之層。 If the vibrating body 17 has a corresponding electrical conductivity, the heated volume is limited to the layer directly adjacent to the active surface 18.

前述實施方案係用於說明本申請整體所包含之發明,該等發明至少透過以下特徵組合分別獨立構成相對於先前技術之進一步方案:一種裝置,其特徵在於,該活性面18導電且具有電接點19、20以導入加熱電流I,該活性面18可藉由該加熱電流被加熱。 The foregoing embodiments are intended to illustrate the invention as embodied in the present application, and the inventions are each independently constructed at least separately from the prior art by a combination of the following features: a device characterized in that the active surface 18 is electrically conductive and has electrical connections. Points 19, 20 are used to introduce a heating current I, which can be heated by the heating current.

一種裝置,其特徵在於,該導電面18占一稜柱體或圓柱體之由邊緣25限定之平表面的至少90%。 A device characterized in that the conductive surface 18 occupies at least 90% of the flat surface defined by the edge 25 of a prism or cylinder.

一種裝置,其特徵在於,該導電面18由該振動體17之表面的導電塗層形成。 A device characterized in that the conductive surface 18 is formed by a conductive coating on the surface of the vibrating body 17.

一種裝置,其特徵在於,該二接點19、20在該活性面18上相互隔開的距離超過自一邊緣到另一邊緣之最大距離的一半。 A device characterized in that the two contacts 19, 20 are spaced apart from each other on the active surface 18 by more than half the maximum distance from one edge to the other.

一種裝置,其特徵在於,該等接點19、20間之電阻介於0.5歐姆與5歐姆之間。 A device characterized in that the resistance between the contacts 19, 20 is between 0.5 ohms and 5 ohms.

一種裝置,其特徵在於,該等接點19、20設於該活性面18之緣邊25的兩個相對區段之區域。 A device characterized in that the contacts 19, 20 are provided in the region of two opposite sections of the rim 25 of the active surface 18.

一種應用,其特徵在於,藉由將電流I導入該導電面18以及由此而實現的將該活性面18加熱,來蒸發在測量該濃度或該分壓時在該活性面18上冷凝且對該振動體17之振盪頻率有影響的塗層。 An application characterized in that by introducing a current I into the electrically conductive surface 18 and thereby heating the active surface 18, evaporation evaporates on the active surface 18 when measuring the concentration or the partial pressure and The oscillating frequency of the vibrating body 17 has an effect on the coating.

一種方法,其特徵在於,將加熱電流I導入直接鄰接該活性面18之導電層,藉由該加熱電流將該活性面18加熱至高於該冷凝物/沉積物之蒸發溫度的溫度,從而以蒸發方式自該活性面18移除該冷凝物/沉積物。 A method, characterized in that a heating current I is introduced into a conductive layer directly adjacent to the active surface 18, and the heating surface 18 is heated by the heating current to a temperature higher than an evaporation temperature of the condensate/sediment to thereby evaporate The condensate/sediment is removed from the active face 18.

一種方法,其特徵在於,使用由GaPO4構成之振動體17,尤其使用至少可被加熱至450℃,較佳可被加熱至850℃之溫度的振動體17。 A method characterized by using a vibrating body 17 composed of GaPO 4 , in particular, a vibrating body 17 which can be heated to a temperature of at least 450 ° C, preferably to a temperature of 850 ° C.

一種裝置、應用或方法,其特徵在於,該用於測定蒸汽之濃度或分壓的裝置為OLED塗佈裝置的一部分且用於確保蒸汽以時間上恆定之流率流入製程室。 A device, application or method, characterized in that the means for determining the concentration or partial pressure of steam is part of an OLED coating apparatus and is used to ensure that steam flows into the process chamber at a temporally constant flow rate.

所有已揭露特徵(作為單項特徵或特徵組合)皆為發明本質所在。故本申請之揭露內容亦包含相關/所附優先權檔案(在先申請副本)所揭露之全部內容,該等檔案所述特徵亦一併納入本申請之申請專利範圍。附屬項以其特徵對本發明針對先前技術之改良方案的特徵予以說明,其目的主要在於在該等請求項基礎上進行分案申請。 All of the disclosed features (as a single feature or combination of features) are the essence of the invention. Therefore, the disclosure of the present application also contains all the contents disclosed in the related/attached priority file (copy of the prior application), and the features described in the files are also included in the scope of the patent application of the present application. The subsidiary item is characterized by its characteristics for the features of the prior art improvement of the prior art, and its purpose is mainly to carry out a divisional application on the basis of the claims.

1‧‧‧感測器 1‧‧‧ sensor

17‧‧‧晶體 17‧‧‧ crystal

18‧‧‧活性表面 18‧‧‧Active surface

19‧‧‧電接點 19‧‧‧Electrical contacts

20‧‧‧電接點 20‧‧‧Electrical contacts

21‧‧‧電流源 21‧‧‧current source

22‧‧‧塗層 22‧‧‧ Coating

25‧‧‧邊緣 25‧‧‧ edge

I‧‧‧加熱電流 I‧‧‧heating current

Claims (14)

一種裝置,其用於測定一容積(2)內之蒸汽的濃度或分壓,特別用於測定或控制由載氣運送過該容積(2)之該蒸汽的質量流量,其中該容積(2)可被加熱裝置(8)加熱至高於該蒸汽之冷凝溫度的溫度,包括:感測器(1),該感測器提供與該蒸汽之濃度或分壓相關的感測器信號,其中該感測器(1)具有可振盪之振動體(17),該振動體之振盪頻率受該振動體(17)之活性面(18)上由冷凝蒸汽形成的質量累積影響;及分析裝置,該分析裝置根據該振盪器頻率與時間相關的變化獲得該濃度或該分壓,其特徵在於,該活性面(18)導電且具有電接點(19、20)以導入加熱電流(I),該活性面(18)可藉由該加熱電流被加熱。 A device for determining the concentration or partial pressure of steam in a volume (2), in particular for determining or controlling the mass flow of the steam carried by the carrier gas through the volume (2), wherein the volume (2) a temperature that can be heated by the heating device (8) to a temperature above the condensation temperature of the steam, comprising: a sensor (1) that provides a sensor signal associated with the concentration or partial pressure of the vapor, wherein the sensor The detector (1) has an oscillatable vibrating body (17) whose oscillation frequency is affected by the mass accumulation formed by the condensed steam on the active surface (18) of the vibrating body (17); and an analyzing device, the analysis The device obtains the concentration or the partial pressure according to the time-dependent change of the oscillator frequency, characterized in that the active surface (18) is electrically conductive and has electrical contacts (19, 20) for introducing a heating current (I), the activity The face (18) can be heated by the heating current. 如請求項1之裝置,其中,藉由該分析裝置測定或控制由載氣運送過該容積(2)之該蒸汽的質量流量。 The apparatus of claim 1, wherein the mass flow rate of the steam carried by the carrier gas through the volume (2) is measured or controlled by the analysis device. 如請求項1之裝置,其中,該導電面(18)占一稜柱體或圓柱體之由邊緣(25)限定之平表面的至少90%。 The device of claim 1, wherein the conductive surface (18) occupies at least 90% of a flat surface defined by the edge (25) of a prism or cylinder. 如請求項3之裝置,其中,該導電面(18)由該振動體(17)之表面的導電塗層形成。 The device of claim 3, wherein the conductive surface (18) is formed by a conductive coating on a surface of the vibrating body (17). 如請求項1之裝置,其中,該二接點(19、20)在該活性面(18)上相互隔開的距離超過自一邊緣到另一邊緣之最大距離的一半。 The device of claim 1, wherein the two contacts (19, 20) are spaced apart from each other on the active surface (18) by more than half the maximum distance from one edge to the other edge. 如請求項1之裝置,其中,該等接點(19、20)間之電阻介於0.5歐姆與5歐姆之間。 The device of claim 1, wherein the resistance between the contacts (19, 20) is between 0.5 ohms and 5 ohms. 如請求項1之裝置,其中,該等接點(19、20)設於該活性面(18)之緣邊(25)的兩個相對區段之區域。 The device of claim 1, wherein the contacts (19, 20) are disposed in regions of two opposing segments of the rim (25) of the active surface (18). 一種感測器之應用,該感測器提供與蒸汽之濃度或分壓相關的 感測器信號,其中該感測器(1)具有可振盪之振動體(17),該振動體之振盪頻率受該振動體(17)之活性面(18)上由冷凝蒸汽形成的質量累積影響,且該振動體之活性面(18)導電且具有電接點(19、20)以導入加熱電流(I),該活性面(18)可藉由該加熱電流被加熱,該感測器在一裝置上用於測定一容積(2)內之蒸汽的濃度或分壓,其中該容積(2)可被加熱裝置(8)加熱至高於該蒸汽之冷凝溫度的溫度。 An application of a sensor that provides correlation with the concentration or partial pressure of steam a sensor signal, wherein the sensor (1) has an oscillatable vibrating body (17) whose oscillation frequency is accumulated by the mass formed by the condensed vapor on the active surface (18) of the vibrating body (17) Influencing, and the active surface (18) of the vibrating body is electrically conductive and has electrical contacts (19, 20) for introducing a heating current (I), and the active surface (18) can be heated by the heating current, the sensor It is used on a device to determine the concentration or partial pressure of steam in a volume (2) which can be heated by a heating device (8) to a temperature above the condensation temperature of the steam. 如請求項8之感測器之應用,其中,測定或控制該由載氣運送過該容積(2)之蒸汽的質量流量。 The application of the sensor of claim 8, wherein the mass flow of the steam carried by the carrier gas through the volume (2) is measured or controlled. 一種清潔如請求項1之裝置之感測器(1)的活性面(18)之方法,其特徵在於,將該活性面(18)加熱至高於該冷凝物/沉積物之蒸發溫度的溫度,從而以蒸發方式自該活性面(18)移除該冷凝物/沉積物。 A method of cleaning an active surface (18) of a sensor (1) of the apparatus of claim 1, characterized in that the active surface (18) is heated to a temperature above the evaporation temperature of the condensate/sediment, The condensate/sediment is thus removed from the active surface (18) by evaporation. 如請求項10之方法,其中,使用由GaPO4構成之振動體(17),尤其使用至少可被加熱至450℃,較佳可被加熱至850℃之溫度的振動體(17)。 The method of claim 10, wherein the vibrating body (17) composed of GaPO 4 is used, in particular, a vibrating body (17) which is at least heated to 450 ° C, preferably heated to a temperature of 850 ° C, is used. 如請求項1之裝置,其中,該用於測定蒸汽之濃度或分壓的裝置為OLED塗佈裝置的一部分且用於確保蒸汽以時間上恆定之流率流入製程室。 The apparatus of claim 1, wherein the means for determining the concentration or partial pressure of the vapor is part of an OLED coating apparatus and is for ensuring that steam flows into the process chamber at a temporally constant flow rate. 如請求項8之應用,其中,該用於測定蒸汽之濃度或分壓的裝置為OLED塗佈裝置的一部分且用於確保蒸汽以時間上恆定之流率流入製程室。 The application of claim 8, wherein the means for determining the concentration or partial pressure of the vapor is part of an OLED coating apparatus and is for ensuring that steam flows into the process chamber at a temporally constant flow rate. 如請求項10之方法,其中,該用於測定蒸汽之濃度或分壓的裝置為OLED塗佈裝置的一部分且用於確保蒸汽以時間上恆定之流率流入製程室。 The method of claim 10, wherein the means for determining the concentration or partial pressure of the vapor is part of an OLED coating apparatus and is for ensuring that steam flows into the process chamber at a temporally constant flow rate.
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