TW201639648A - Method for producing an EUV module, EUV module and EUV lithography system - Google Patents

Abstract

The invention relates to a method for coating a surface (101) of an EUV submodule (120, 130) of ceramic material (100) that is intended for use in an EUV lithography system (500). Firstly, metallic solder (114) is applied to the surface (101) of the ceramic substrate (100) over its full surface area. Then a thermal treatment is performed for producing a material bond (116) between the ceramic material (100) and the metallic solder (114). The invention also relates to a method for producing an EUV module (200). For this purpose, at least two EUV submodules (120, 130) respectively coated over their full surface area by the method described above are joined by soldering or adhesive bonding. The invention relates furthermore to an EUV submodule (120, 130), to an EUV module (200) and to an EUV lithography system.

Description

Method for manufacturing EUV module, EUV module and EUV lithography system

The present invention relates to a method of manufacturing an EUV module for an EUV lithography system, an EUV module, and an EUV lithography system.

Among these methods, a semiconductor photolithographic method is used for fabricating a semiconductor element, wherein the structural pattern to be formed is projected to a photosensitive layer by a reduction ratio by means of a mask (doubler mask). The functional layer is then transferred to the functional layer by an etching process after developing the photosensitive layer. The manufacture of increasingly fine structures makes it necessary to use light with shorter and shorter wavelengths for lithography processes. Therefore, the existing lithography method interacts with electromagnetic radiation into the range of Extremely Ultraviolet Light (EUV). The term EUV radiation is used to refer to electromagnetic radiation having a wavelength between 30 nm (nano) and 5 nm, in particular 13.5 nm. EUV radiation is typically generated by a plasma source or as a synchrotron. Because EUV radiation is highly absorbed by most known materials, projection exposure systems in EUV lithography typically use reflective components. A specially designed mirror system is used for this purpose, which directs the radiation onto the reticle in a suitable manner and then onto the desired area of the semiconductor wafer. The known EUV lithography system simultaneously The reflective refracting reticle in the form of a reflective carrier layer having a structured absorbent layer disposed thereon or in the form of an absorbent carrier layer having a structured reflective layer disposed thereon is operated.

When the lithographic micro- or nano-structure is imaged onto the surface of the wafer, it is typically not the entire wafer being exposed, but only a narrow area. Generally, the wafer surfaces are exposed one by one or through a slit. This involves both the wafer and the reticle being scanned in steps and moving parallel or anti-parallel relative to each other.

The components of the projection optical unit for the EUV lithography system are made of modern technical ceramics, such as Silicon Carbide (SiC) or Silicon-infiltrated silicon carbide (Si: SiC), and in particular Suitable for receiving sensors. These materials combine many positive technical characteristics: good stiffness (providing superior vibration characteristics), good thermal conductivity, low thermal expansion (excellent geometric stability under load), and light weight. The structural elements are fabricated from a sintered body and are reinforced by subsequent calcination at a high temperature in the range of 1600 °C. The ceramic components thus produced are relatively closed and have a high density. Nonetheless, these ceramic components cannot be used in this untreated state in an EUV system. One reason for this is that even subsequent abrasive or sandblasted surfaces sometimes have only low strength and may cause particulate contamination in the EUV lithography system. Moreover, there are often shallow pores and cracks in large ceramic components. Furthermore, free, incompletely reacted antimony contaminants on the surfaces of the ceramic components may be present in the EUV lithography system by the hydrogen radicals (divided by the EUV radiation) The H ₂ molecules are generated and decomposed and deposited on the surfaces of the optical components in the EUV lithography system; this can result in undesirable transmission losses. Moreover, the surfaces of the untreated ceramic components are generally very rough, which makes them significantly more difficult to clean in a vacuum compatible manner. See also Figure 1 for these problematic characteristics of the untreated ceramic components mentioned above. 1 shows a ceramic substrate 100 having non-critical pores 102 in the volume of the substrate 100 and having key portions on the substrate surface 101 to sharpen the pores 104. Moreover, shallow cracks 106 and free crucibles 108 are visible on the substrate surface 101. Of particular importance is the weak bond zone 110 near the substrate surface 101 as it may become separate and as free moving particles may interfere with the function of the EUV lithography system. The problematic characteristics of the aforementioned untreated ceramic components are caused by the process and are unavoidable. There is a need for a surface coating of such ceramic components that bonds loose particles, protects the ruthenium elements from the hydrogen radicals, seals cracks and pores, and reduces the surface roughness to possible cleaning procedures without any The extent of the problem. As is known from the prior art, as shown in Fig. 2, the surface 101 of the polished ceramic component 100 is coated with a metal coating 112 of nickel-phosphorus alloys (NiP). This coating is carried out, for example, by electroplating or chemical treatment (chemical nickel). The anchoring of the NiP layer 112 occurs purely mechanically, wherein the interlocking engagement is formed by the surface roughness. The interlocking connection is generated by means of at least two connection partners that are connected to each other. Therefore, the connection partners cannot be spread even when the force is transmitted or the force transmission is interrupted.

However, the low layer bonding provided by the interlocking engagement and the imperfect surrounding area of the ceramic component limit such forces that may be transferred into the ceramic component 100 via the NiP layer 112, and may, for example, be bonded with an adhesive or These allowable temperature gradients occur with soldering or brazing. Therefore, the expansion coefficient of NiP is quite different from that of Si:SiC. The result is that the electroplated or chemically coated ceramic components cannot be bonded by adhesive bonding or soldering to form larger subassemblies and accessories for gripping the inductor (also known as clamping assemblies), which are not sufficient Firmly attached to the ceramic component coated with NiP. To form a larger sub-assembly from a ceramic component, by adhesive bonding or soldering Many of the components joined must therefore be carried out in the uncoated state, i.e. without the NiP layer. The fully joined ceramic sub-assemblies are coated with the NiP alloy only after bonding. However, this causes a problem that the ceramic sub-assembly composed of the heterogeneous material can no longer be coated with a NiP alloy of sufficient quality due to the bonding result. For example, the NiP layer deposited by electroplating on the adhesive bond is not sufficiently adhered and the adhesive is damaged by the coating.

Metal solders for joining ceramic components to each other have been described many times before. A series of proposals for manufacturing complex ceramic components by welding individual parts have become known. For example, according to DE 197 34 211 A1, the ceramic components to be joined are first metallized and then welded. The term metallization is used for heat treatment, and thereby curing, metal solder on the surfaces of the ceramic components. However, this metallization will only occur at such locations on the ceramic components to be welded to each other in this case. The entire surface of the ceramic components is not sealed by the metal solder.

In the present application, the term "EUV sub-module" is used synonymously with the ceramic component, and the EUV module is used synonymously with a secondary assembly comprising a plurality of ceramic components or a plurality of bonded EUV sub-modules.

In view of the above disadvantages, in joining the ceramic component to form a secondary assembly prior to the absolutely necessary coating, the object is to provide a method of making a sufficiently stable connection between the ceramic components while enclosing the bonded ceramic component. surface. A further object is to provide a secondary assembly having the aforementioned positive characteristics.

This object is achieved in accordance with the present invention by a method of coating the surface of an EUV sub-module of a ceramic material suitable for use in an EUV module of an EUV lithography system. The method according to the invention has at least the following steps: first, a metal solder is applied over the entire surface area of the surface of the EUV sub-module Above the domain. Next, a heat treatment is performed to create a material bond between the ceramic material and the metal solder. All connections in which the linking partners are held together by atomic or molecular forces are known as material bonding connections. They are also non-removable connections and can only be separated by means of breaking the connection. This method has many advantages. In one aspect, the loose particles of the ceramic EUV sub-module are bonded and the cracks and pores in the ceramic material are closed. Furthermore, the encapsulation protects the free ruthenium element from the action of hydrogen radicals. To ensure this protection, the metal solder must be applied over the entire surface area of the surface. A major advantage of the method according to the invention is the bonding of the material. Only such material bonds can be bonded to the EUV sub-module by adhesive bonding or soldering to form an EUV module. Furthermore, the closure smoothes the surface of the EUV sub-module; this makes it easier to clean.

In a specific embodiment, the metal solder is applied by screen printing, spraying, dipping, or stretching.

In a specific embodiment, the heat treatment is carried out in a vacuum at 700 ° C to 1500 ° C for 5 minutes to 60 minutes. This temperature range and the time of exposure to this thermal energy are particularly advantageous because a particularly stable material bond connection is thus produced between the metal solder layer and the ceramic substrate.

In a specific embodiment, the reactive metal solder is coated as the metal solder, in particular silver and copper having an additive of titanium (Ti), manganese (Mn), zirconium (Zr), and/or hafnium (Hf). Melt. The heat treatment is carried out in this case at 700 ° C to 900 ° C, preferably for 5 minutes to 10 minutes. The drying step may be carried out at 100 ° C to 120 ° C for 5 minutes to 10 minutes before the heat treatment. Depending on the metallization width, the bonding strength of such materials can be up to 50 MPa (megapascals).

In an alternative embodiment, a non-reactive metal solder, particularly a tungsten solder paste Coating as the metal solder. The heat treatment is carried out at 1000 ° C to 1500 ° C, preferably for 30 minutes to 60 minutes. This high temperature is necessary because no chemical reactions occur, but the tungsten atoms must diffuse into the ceramic substrate, and the atoms of the substrate must diffuse into the microstructure of the tungsten solder. The drying step may be carried out at 100 ° C for 10 minutes to 15 minutes before the heat treatment.

In a specific embodiment, the surface of the EUV sub-module coated with the metal solder over the entire surface area is subsequently coated with nickel (Ni) at least in certain regions. A stable metal bond is created between the nickel and the metallized surface. This aspect also increases the resistance of the surface to hydrogen and hydrogen radicals. On the other hand, the nickel layer improves the wettability of the metallized surface of the solder. The areas to which the nickel is applied also allow for stable bonding by means of adhesive bonding and soldering.

In a specific embodiment, the subsequent coating using nickel is performed by an electroplating process by physical vapor deposition (PVD) or by chemical vapor deposition (CVD). Furthermore, nickel is also particularly suitable for subsequent coating since it can be coated very well with a constant layer thickness. Alternatively or in addition, the fully metallized surface of the EUV sub-module may subsequently be coated with copper or gold in certain areas.

The objects mentioned at the outset are also achieved in accordance with the present invention by a method of generating an EUV module from an EUV sub-module. First, at least two EUV sub-modules coated in accordance with the present invention are provided. The EUV sub-modules provided are then joined. Joining relatively small and lightweight EUV sub-modules to form relatively large and heavy EUV modules has several advantages. In the manufacture of such ceramic substrates for such EUV sub-modules, a certain number of defective products are unavoidable. If the EUV module is fabricated directly as a single component, the bonding process between the EUV sub-modules may be omitted. However, if the large single EUV module has to be discarded due to manufacturing defects, the cost will be much higher than if the EUV sub-module with only small defects must be discarded.

In one embodiment, the EUV sub-modules provided are joined by soldering, particularly with a hard solder. Hard solders refer to alloys based on high silver content of nickel silver or copper, which are typically supplied in the form of strips, rods, wires, films, and sometimes pastes. Hard solder pastes already contain flux, so as in the case of other solder forms, there is no need to add additional solder paste. In contrast to soft solders (based on tin/lead), hard solders are particularly suitable for metal connections that are subject to high mechanical and thermal loads. Alternatively or in addition, the EUV sub-modules provided are joined by adhesive bonding, particularly ceramic adhesives. Ceramic adhesives are particularly advantageous because they hardly escape gas in a vacuum. In the case of ceramic adhesives (also referred to as ceramic cements), in principle the ceramic powder is mixed with an inorganic binder system such as water glass or a phosphate compound. Some of the adhesives are provided as a paste, while others are slightly mixed from the powder and liquid ingredients prior to use. There are two groups of ceramic adhesives. The first type is physically bonded by volatilization of a solvent, typically water. These adhesives have mineral fillers such as alumina (Al ₂ O ₃ ), zirconia (ZrO ₂ ), and magnesium oxide (MgO). Second, precise chemical curing by concentration reaction.

Alternatively, an organic binder may be used for the bonding, for example, a methyl methacrylate (MMA) adhesive or an epoxy resin adhesive.

The objects mentioned at the outset are also achieved in accordance with the invention by the coated EUV sub-modules provided in the EUV lithography system. The EUV sub-module has a ceramic body covered with metal solder over the entire surface area. There is a material bond between the ceramic body and the metal solder. This material bonding is absolutely necessary so that the EUV sub-modules may later be stably joined to each other by means of adhesive bonding or welding.

In a specific embodiment, the EUV sub-module has the metallization, that is, the metal solder in the cured state, between 5 μm (micrometer) and 300 μm, preferably between A thickness of between 10 μm and 200 μm. This thickness is sufficient for bonding by means of adhesive bonding or soldering; it must not be below the lower limit of 5 μm, otherwise there is a risk of holes in the metallization. Avoiding these holes is critical to ensure complete closure of the EUV sub-module. The thickness of the minimum necessary for the metallization depends on the basic roughness of the ceramic substrate. The lower the basic roughness, the thinner the metallization can be selected. The significant thickness of the metallization should generally be considered positive with respect to the quality of the closure. However, a thickness of 300 μm or more or more may have a risk that the organic components of the tungsten solder paste which can be stretched by the tungsten solder paste cannot be completely burned out during the conditioning, that is, during the heat treatment. This reduces the quality of the bond between the ceramic substrate and the metallization and poses a risk of contamination of the EUV lithography system.

In a specific embodiment, the ceramic material comprises alumina (Al ₂ O ₃ ), tantalum carbide (SiC), and/or niobium infiltrated niobium carbide (Si: SiC). Si: SiC is particularly advantageous for use in EUV sub-modules in lithography systems due to its superior vibration characteristics, very good thermal conductivity, low thermal expansion, and excellent geometric stability under load. Yet another advantage lies in the light weight compared to metallic materials.

In a specific embodiment, the reactive metal solder is applied to the EUV sub-module as a metal solder, in particular having a titanium oxide (Ti), manganese (Mn), zirconium (Zr), and hafnium (Hf). A silver-copper eutectic of the additive of the group.

In an alternative embodiment, a non-reactive metal solder, in particular a tungsten solder paste, is applied to the EUV sub-module as the metal solder.

In a specific embodiment, the EUV sub-module has at least one layer covering at least some regions of the metallization (ie, the metal solder in the cured state), particularly nickel, nickel-phosphorus alloy, copper, or gold. Another metal layer. The advantages of subsequent nickel coating are as mentioned above. and.

The objects stated at the outset are also achieved in accordance with the present invention by an EUV module having at least two EUV sub-modules joined to each other as described above. The EUV sub-modules are joined to each other with a tensile strength of between 5 MPa and 50 MPa. The factors depending on the degree of tensile strength depend on the type of bonding means. This strong bond is a basic prerequisite for a stable EUV module.

In a specific embodiment, at least one clamping assembly engages the EUV sub-module or with the EUV module. The clamping assembly can be an inductor mount.

In a specific embodiment, the clamping assembly is joined by soldering, particularly with a hard solder. Alternatively or in addition, the clamping assembly may be joined by adhesive bonding, particularly with ceramic adhesives and/or organic adhesives.

Moreover, the EUV lithography system is claimed in accordance with the present invention. This has at least one EUV module designed to carry at least one inductor, used as a measurement architecture or as a measurement standard. Moreover, the EUV lithography system has at least one force frame for carrying at least one optical component, in particular a mirror. The exact position of the optical component can be determined by means of the sensor. The force frame is usually made of steel. In addition to the force framework terminology, the framework language is also used. The plurality of EUV modules are spaced apart from each other and decoupled. The EUV modules are also separated and decoupled from the force frame.

100‧‧‧Substrate

101‧‧‧ substrate surface

102‧‧‧Pores in the volume of the substrate

104‧‧‧ Partially worn pores on the surface of the substrate

106‧‧‧Shallow cracks

108‧‧‧Free 矽

110‧‧‧ Weak bonding area on the surface of the substrate

112‧‧‧Ni-P alloy

114‧‧‧Metal solder

115‧‧‧ another metal layer

116‧‧‧Material bonding in the area of the transition zone

120‧‧‧First EUV sub-module

130‧‧‧Second EUV sub-module

140‧‧‧Intersection between the first and second EUV sub-modules

150‧‧‧Intersection between the EUV module and the clamping assembly

160‧‧‧Clamping components

170‧‧‧ sensor

200‧‧‧EUV module

204‧‧‧Mechanical decoupling of EUV modules and force frames

300‧‧‧ force framework

302‧‧‧Optical components

304‧‧‧Mechanical decoupling of force frames and fixed surroundings

400‧‧‧Fixed surroundings

500‧‧‧EUV lithography system

502‧‧‧EUV light source

504‧‧‧beam shaping and lighting system

506‧‧‧Projection system

510‧‧‧Photomask

514‧‧‧ wafer

516‧‧‧EUV radiation

520‧‧‧vacuum housing

610, 612, 614, 616, 618‧‧‧ mirrors in beam shaping and illumination systems

624‧‧‧The optical axis of the projection system

636‧‧‧Mirror

M1, M2, M3, M4, M5‧‧‧ mirrors in projection systems

Various exemplary embodiments are described in greater detail below based on the figures. Elements that are the same, the same type, or function in the same manner have the same reference numerals in the drawings. The illustrations and relative sizes of the elements shown in the figures are not to be regarded as true. Instead, individual components may be better for better representation and for better The understanding is to enlarge the size or reduce the size display.

Figure 1 shows a ground ceramic substrate prior to the coating.

Figure 2 shows a ground ceramic substrate having a coating according to the prior art.

Figure 3 shows a cutaway view of an EUV sub-module coated in accordance with the present invention.

Figure 4 shows a cutaway view of an alternative EUV sub-module coated in accordance with the present invention.

Figure 5 shows, in schematic form, an EUV module according to the invention joined from two EUV sub-modules coated in accordance with the present invention.

Figure 6 shows, in schematic form, an EUV module in accordance with the present invention having a bonded clamp assembly and an inductor.

Figure 7 shows, in schematic form, a cutaway view from the EUV lithography system that is critical to the invention.

Figure 8 shows the entire EUV lithography system in schematic form.

1 shows a conventional ceramic substrate 100 having non-critical pores 102 in a substrate 100 and having key portions on the substrate surface 101 to sharpen the pores 104. Moreover, shallow cracks 106 and free crucibles 108 are visible on the substrate surface 101. It is apparent that particularly critical is the weak bond zone 110 near the substrate surface 101 as it may become separate and as free moving particles may interfere with the function of the EUV lithography system. The material of the substrate 100 is bismuth osmium carbide (Si: SiC). The substrate 100 shown in Fig. 1 is simultaneously the starting product of the coating method according to the present invention (the results of which are shown in Figs. 3 and 4), and the starting product according to the coating method of the prior art (the results are shown in the figure). 2)).

Figure 2 shows the results from the coating of the ceramic substrate 100 of Figure 1 in accordance with the method of the prior art. A metal coating of nickel phosphorus alloy (NiP) 112 has been applied to surface 101 of abrasive ceramic component 100. This coating is carried out, for example, by electroplating or chemical treatment (chemical nickel). The anchoring of the NiP layer 112 occurs purely mechanically, wherein the interlocking engagement is formed by the surface roughness. The interlocking connection is generated by means of at least two connection partners that are connected to each other. Therefore, the connection partners cannot be spread even when the force is transmitted or the force transmission is interrupted.

However, the low layer bonding provided by the interlocking engagement and the imperfect surrounding area of the ceramic component limit such forces that may be transferred into the ceramic component 100 via the NiP layer 112, and may, for example, be bonded with an adhesive or These allowable temperature gradients occur with soldering or brazing. Therefore, the expansion coefficient of NiP is quite different from that of Si:SiC. The result is that the electroplated or chemically coated ceramic components cannot be joined by soldering and bonded to the limited range by means of adhesive bonding to form larger secondary assemblies and accessories for clamping inductors (also known as clamping assemblies). ), it can only be attached to the ceramic component coated with NiP insufficiently firmly.

3 shows a cutaway view of an EUV sub-module 120, 130 coated in accordance with the present invention for use in an EUV lithography system. First, the metal solder 114 is applied over the entire surface area of the substrate surface 101 by screen printing, spraying, dipping, or stretching. Next, heat treatment is performed to make a material bond between the ceramic material 100 and the metal solder 114. The material bond is present in the transition zone 116 between the metallization (i.e., the metal solder 114 in the cured state) and the ceramic substrate 100. The heat treatment is carried out in a vacuum at a temperature ranging from 700 ° C to 1500 ° C for 5 minutes to 60 minutes.

Two groups of materials may be used as the metal solder 114 in accordance with the present invention. On the one hand, it is possible to use reactive metal solders, in particular titanium (Ti), manganese (Mn), zirconium (Zr), and/or A silver-copper eutectic of an additive of hydrazine (Hf). This heat treatment is carried out in this case at 700 ° C to 900 ° C for 5 minutes to 10 minutes. On the other hand, a non-reactive metal solder, particularly a tungsten solder paste, may be used as the metal solder 114. This heat treatment is carried out in this case at 1000 ° C to 1500 ° C for 30 minutes to 60 minutes.

The metal solder 114 in the cured state closes the surface 101 of the ceramic substrate 100, and thereby bonds, for example, the free crucible 108 and the weak bonding region 110 of the substrate 100. After this improvement, the EUV sub-modules 120, 130 are suitable for vacuum.

The metallization, that is, the thickness of the metal solder 114 in the cured state is between 5 μm and 300 μm. Even a thickness of 5 μm is sufficient to impart such properties of the metal to the surface of the ceramic EUV sub-module.

4 shows a cutaway view of an EUV sub-module 120, 130 that is alternatively applied in accordance with the present invention. The surface 101 coated with the metal solder 114 is subsequently coated with nickel (Ni) at least in certain regions. This subsequent coating with nickel is carried out by physical vapor deposition (PVD) or by chemical vapor deposition (CVD) in an electroplating process. The nickel coating 115 enters a stable connection with the metal solder 114 in the cured state, and is suitable for the subsequent bonding process in a manner similar to the metal solder 114 in the cured state.

Figure 5 shows, in schematic form, an EUV module 200 in accordance with the present invention joined from two EUV sub-modules 120, 130 coated in accordance with the present invention. To fabricate the EUV module 200, two coated EUV sub-modules 120, 130 are first provided. Then, the two EUV sub-modules 120, 130 are joined. This bonding may be performed by soldering, in particular using a hard solder. Alternatively, the bonding may be carried out by adhesive bonding, in particular using a ceramic adhesive. The junction area 140 between the first EUV sub-module 120 and the second EUV sub-module 130 is between 5 MPa and 50 MPa. The tensile strength between the two EUV sub-modules 120, 130 is connected. The individual values of the tensile strength depend on the choice of solder and the choice of adhesive. The welded joint has a tensile strength of up to 50 MPa. The bond is bonded using an adhesive which is particularly suitable for ceramic adhesives operating in high purity vacuum, having a tensile strength of between 5 MPa and 10 MPa.

Figure 6 shows, in schematic form, an EUV module 200 in accordance with the present invention having a bonded clamp assembly 160. This clamp assembly 160 is designed as an inductor mount in an exemplary embodiment of the invention. The clamping assembly 160 may be bonded to the metal solder 114 of the EUV module 200 in a cured state by soldering (especially using hard solder) and/or by adhesive bonding (especially using a ceramic adhesive). A land 150 having the aforementioned tensile strength is formed between the EUV module 200 and the clamp assembly 160. Disposed on the clamping assembly 160 is an inductor 170. In an exemplary embodiment not shown, a plurality of clamp assemblies 160 having a plurality of inductors 170 are attached to the EUV module 200.

Figure 7 shows, in schematic form, a cutaway view from the EUV lithography system 500 that is critical to the invention. The EUV module 200 is separated from the force frame 300 by a mechanical decoupling 204. The EUV module 200 carries the inductor 170 by the clamping assembly 160. The force frame 300 carries an optical component 302, in particular a mirror. Moreover, the actuators (not shown in this illustration) for actuating the optical assembly 302 are clamped to the force frame 300. In an exemplary embodiment not shown, the plurality of inductors 170 are attached to the EUV module 200 by a plurality of clamping assemblies 160. Thus, EUV module 200 is also referred to as a sensor frame, measurement architecture, or measurement standard. The force frame 300 is separated from the solid surrounding environment 400 by a mechanical decoupling 304. In this case it is decisive that the EUV module is separated from the force frame 300. This spacing allows the spatial position of the optical assembly 302 to be sensed by the inductor 170 of the sensor frame 200 without any problem. In this case, with this The respective positions of the mirrors associated with the sensor frame 200 may be measured by the position sensor 170 by means of an actuator (not shown in the illustration) and by means of a controller (not shown in the figure) being set to The required value. This detailed information is disclosed in DE 102011077315 A1.

In an exemplary embodiment not shown, the EUV lithography system 500 has a plurality of EUV modules 200. Each EUV module 200 may subsequently be designed to sense the location of various groups of optical components 302. The plurality of EUV modules 200 of the EUV lithography system 500 are completely mechanically decoupled from one another.

FIG. 8 schematically shows an EUV lithography system 500 as a whole that includes a beam shaping and illumination system 504 and a projection system 506. A beam shaping and illumination system 504 and projection system 506 are respectively provided in the vacuum housing, each vacuum housing being evacuated by means of a vacuuming device not more specifically shown. The vacuum housings are surrounded by a mechanical chamber (not more specifically shown) in which the drive means for mechanically moving or adjusting the optical elements are provided. A power controller and the like can also be provided in this machine room.

The EUV lithography system 500 has an EUV light source 502. A plasma source or synchrotron that emits radiation 516 in the EUV range can be provided, for example, as an EUV source 502. In beam shaping and illumination system 504, EUV radiation 516 is focused and the desired operating wavelength is filtered from EUV radiation 516. The EUV radiation 516 produced by the EUV source 502 has a relatively low air transmission, such that the beam guiding spaces in the beam shaping and illumination system 504 and in the projection system 506 are evacuated.

The beam shaping and illumination system 504 shown in FIG. 8 has five mirrors 610, 612, 614, 616, 618. After passing through the beam shaping and illumination system 504, the EUV radiation 516 is directed onto the reticle (double reticle) 510. The mask 510 is also formed as a reflective optical element and can be provided Placed outside of the systems 504, 506. Furthermore, EUV radiation 516 may be directed to reticle 510 by means of mirror 636. The reticle 510 has a structure whose reduced image is depicted on the wafer 514 or the like by means of the projection system 506.

Projection system 506 has six mirrors M1-M6 for depicting an image of reticle 510 on wafer 514. In this case, the individual mirrors M1-M6 of the projection system 506 may be symmetrically disposed relative to the optical axis 624 of the projection system 506. It should be noted that the number of mirrors of the EUV lithography system 500 is not limited to the number indicated. It is also possible to provide more or fewer mirrors. Furthermore, the mirrors M1-M6 are generally curved on the front side for beam shaping.

In addition, projection system 506 also has a number of inductors 170, particularly position sensor devices, for determining the position of one of the mirrors M1-M6.

For example, assume that projection system 506 has six mirrors M1-M6 (N1=6), five of which can be actuated (N2=5) and each of these actuable mirrors can be assigned six positions. The sensor device 170 (N4 = 6) obtains the number N3 of position sensor devices 170 in the projection system 506 (N3 = N4 x N2 = 6 x 5 = 30).

Without limiting the generality and for reasons of simplifying the representation, FIG. 8 shows only one position sensor device 170.

The position sensor device 170 is coupled to an evaluation device not shown. The evaluation device is designed to determine the position of the actuatable mirrors of the mirrors M1-M6 by means of the output signals of the position sensor device 170. The evaluation device, like the position sensor device 170, can be disposed in the vacuum housing 520 of the projection system 506. In this case, the evaluation device is integrated into the signal processing unit, for example. Alternatively, the evaluation device may also be disposed external to the vacuum housing 520 of the projection system 506.

At least one EUV module 200 (not shown in FIG. 8) in accordance with one of the foregoing exemplary embodiments is disposed in projection system 506.

100‧‧‧Ceramic substrate

114‧‧‧Metal solder

120, 130‧‧‧ EUV sub-module

140‧‧‧ junction area

200‧‧‧EUV module

Claims (15)

A method of coating a ceramic material (100) on a surface (101) of an EUV sub-module (120, 130), which is suitable for an extreme ultraviolet (EUV) lithography system, comprising: - a metal solder (114) Applying over the entire surface area of the surface (101); - applying a heat treatment to create a material bond (116) between the ceramic material (100) and the metal solder (114). The metal solder (114) is applied by screen printing, spraying, dipping, or stretching, as in the method of claim 1. A method of manufacturing an EUV module (200), comprising: - providing at least two EUV sub-modules (120, 130), respectively coated by a method as described in claim 1 or 2; The EUV sub-modules (120, 130) provided are joined. The method of claim 3, wherein the EUV sub-modules (120, 130) are provided by soldering (especially using hard solder) and/or by adhesive bonding (especially Bonded with ceramic adhesive). An EUV sub-module (120, 130) suitable for an EUV lithography system, having a ceramic body (100) and having a metal solder (114) covering the entire surface area of the ceramic body (100) A material bond (116) between the ceramic body (100) and the metal solder (114). The EUV sub-module (120, 130) of claim 5, wherein the metal solder (114) has a thickness of between 5 μm and 300 μm, preferably between 20 μm and 200 μm. . The EUV sub-module (120, 130) according to claim 5 or 6, wherein the material of the ceramic body (100) is selected from the group consisting of alumina (Al ₂ O ₃ ), tantalum carbide (SiC) ), and a group of niobium infiltrated niobium carbide (Si: SiC). The EUV sub-module (120, 130) according to any one of the items 5 to 7, wherein a reactive metal solder is coated as the metal solder (114), in particular a silver-copper. The eutectic has an additive selected from the group consisting of titanium (Ti), manganese (Mn), zirconium (Zr), and hafnium (Hf). The EUV sub-module (120, 130) according to any one of claims 5 to 7, wherein a non-reactive metal solder, in particular a tungsten solder paste, is applied as the metal solder ( 114). The EUV sub-module (120, 130) of any one of clauses 5 to 9, wherein at least in some regions, at least one other metal layer (115) covers the metal solder ( 114) The material of the other metal layer (115) is selected from the group consisting of nickel, nickel phosphorus alloy (NiP), copper, and gold. An EUV module (200) comprising at least two EUV sub-modules (120, 130) according to any one of claims 5 to 10 joined to each other. The EUV module (200) of claim 11, wherein the EUV sub-modules (120, 130) are soldered, in particular by hard solder and/or by an adhesive, in particular Bonded by a ceramic adhesive. The method of any one of clauses 1 to 4, wherein at least one clamping component (160), in particular at least one sensor mounting bracket, and the EUV sub-module (120, 130) or Engaged with the EUV module (200). The method of claim 13, wherein the clamping component (160) is joined by soldering (especially using hard solder) and/or by adhesive bonding (especially using a ceramic adhesive). An EUV lithography system (500) comprising at least one EUV module (200) as described in claim 11 or 12, as a measurement architecture designed to carry at least one inductor (170) Or a measurement standard, and as at least one force frame (300) carrying at least one optical component (302), the position of the optical component can be determined by means of the inductor (170).