DE102014224418A1 - Holding device and lithography system - Google Patents

Abstract

Holding means (204, 500, 600) for holding a member (206, 504, 604) in a socket (202) in a lithography apparatus (100), the member (206, 504, 604) being made of a first material having a first thermal Expansion coefficient is made and the holding device (204, 500, 600) has at least one holding element (208, 502, 602), which is made of a second material having a second coefficient of thermal expansion, wherein the holding element (208, 502, 602) arranged thereto is to at least partially hold the element (206, 504, 604) in the socket (202), and at least one connecting element (300, 506, 606) connected between the element (206, 504, 604) and the retaining element (208 , 502, 602), wherein a first side (302) of the connecting element (300, 506, 606) with the element (206, 504, 604) and a second side (304) of the connecting element (300, 506, 606) is connected to the holding element (208, 502, 602), wherein the connecting element (300 , 506, 606) is made of a material adapted to compensate for a difference between the first thermal expansion coefficient and the second coefficient of thermal expansion, wherein the material of the connecting element (300, 506, 606) is a mixture of a bondable metal matrix and a inert material, wherein a metal content of the element (206, 504, 604) to the holding element (208, 502, 602) changes such that the coefficient of thermal expansion of the connecting element (300, 506, 606) from the element (206, 504 , 604) to the retaining element (208, 502, 602) changes.

Description

The present invention relates to a holding device for holding an element in a socket in a lithography system. Furthermore, the present invention relates to a lithography system.

In lithography systems, it may be necessary to hold elements by means of a frame and different frame techniques. The setting techniques, which are common both in applications for vacuum ultraviolet lithography (VUV lithography) and extreme ultraviolet lithography (EUV lithography) applications, often carried out such that different thermal expansion coefficients of the materials used by a thermal decoupling (Such as introduced elastomers, leaf springs, solid joints, etc.) can be compensated. For example, this describes EP 0 964 281 A1 such a version. Alternatively, arrangements with so-called thermal zero-crossing may be used. However, these solutions can often be difficult to implement due to space constraints or are only limited use for cohesive connections. Furthermore, bonded connections can introduce stress zones into an element, which can only be rendered ineffective by means of generously dimensioned oversizes or overflows for an optical beam path.

Against this background, an object of the present invention is to provide an improved holding device and an improved lithography system.

Accordingly, a holding device is provided for holding an element in a socket in a lithography system, wherein the element is made of a first material having a first thermal expansion coefficient. The holding device has at least one holding element, which is made of a second material having a second coefficient of thermal expansion, wherein the holding element is adapted to hold the element at least partially in the socket, and at least one connecting element, which between the element and the holding element is arranged. A first side of the connecting element is connected to the element and a second side of the connecting element is connected to the holding element, wherein the connecting element is made of a material which is adapted to compensate for a difference between the first thermal expansion coefficient and the second coefficient of thermal expansion the material of the connecting element comprises a mixture of a bondable metal matrix and an inert grain material, wherein a metal content changes from the element to the holding element such that the thermal expansion coefficient of the connecting element changes from the element to the holding element.

In embodiments, the element is an optical element such. As a mirror or lens for lithographic applications. A corresponding optical element is in particular furnished lithographic structure with the aid of UV radiation, for. B. VUV or EUV radiation to map.

The retaining device described above has the particular advantage that thermally induced stresses of a cohesive connected fitting technology are minimized in such a way that possible overflows can be reduced to a small oversize. This allows in particular a cost advantage through material savings. Furthermore, the holding device has a lower volume requirement. This allows a more compact design of the socket or a lithographic system in which the socket is used. In addition, the material savings also saves weight. Furthermore, stress states in an active region of the element can be avoided.

The connecting element of the holding device allows the difference between the first coefficient of thermal expansion and the second coefficient of thermal expansion to be compensated in such a way that a thermally induced stress in the element is minimized by the holder. This is made possible by the fact that an adaptive connecting element is provided at the transition between the partial bodies (element and retaining element), which have different thermal expansion coefficients, which is essentially formed by a composite of grain material with the lowest possible thermal expansion coefficients and a matrix material. In particular, the matrix material may have a sufficient binding capability for the grain material, do not attack the grain material, have sufficient mechanical strength, be admixed in powder form to the grain material, and consolidated at hot pressing temperatures into a substantially consistent material. However, it may be mechanically stable up to the application temperature of the holding device. Such a connecting element is for example in the EP 0 394 828 A1 described. On the EP 0 394 828 A1 is hereby incorporated by reference ("incorporated by reference").

Preferably, the thermal expansion coefficient of the connecting element changes continuously. Alternatively, the coefficient of thermal expansion of the connecting element may change stepwise from the element to the retaining element, for example by a layer sequence.

The bondable metal matrix of the mixture can be formed, for example, by an at least binary metal alloy. Furthermore, at least in the zone adjacent to the element, it can have an approximately equal or lower coefficient of thermal expansion than the element (especially a thermal expansion coefficient which leads to no or a negative thermal expansion).

The term "thermal expansion coefficient or thermal expansion" is understood to mean, in particular, the proportionality constant between a temperature change and a relative change in length of a solid. With it, therefore, the relative change in length is described at a temperature change. The thermal expansion coefficient is a substance-specific size. In particular, the first thermal expansion coefficient, i. H. the coefficient of thermal expansion of the material of the element, less than the second thermal expansion coefficient, d. H. the thermal expansion coefficient of the material of the holding element, be.

Furthermore, a gradient of the thermal expansion in the connecting element in the direction perpendicular to the joining surfaces or bonding surfaces due to the correspondingly selected material components and / or material types in the connecting element can amount to a maximum of 40% / mm. This can be achieved in particular in that the connecting element is designed as a layered body of more or less discrete layers, in which the layer sequence is selected accordingly. Alternatively or additionally, the expansion coefficient of the connecting element may also change more or less continuously from the first side to the second side.

The grain material may be embedded in an alloy matrix, in particular of multi-material alloys. In particular, the alloy matrix may be selected so that it forms a composite material with the grain material during sintering together, which may have a thermal expansion adapted to the partial bodies to be connected, ie the element and the retaining element. Examples of suitable materials may be the EP 0 394 828 A1 , in particular the local Table 1 and Table 2 are taken. On the EP 0 394 828 A1 is hereby incorporated by reference.

The holding element can in particular be held directly in a socket or coupled with a socket. Alternatively, the retaining element can also be indirectly, for example via an intermediate element, coupled with the socket. In particular, the holding device can serve as an intermediate device between a socket and the element. For example, the holding device may be configured to connect the element via an intermediate element of the socket.

The term "element" may in particular be understood to mean any element which is held in a lithography system. For example, the element may be an optical element, that is, an element that is used in a beam path of the lithography system. For example, the element may be a lens, a mirror, a retardation plate, a glass plate, a plate configured to change characteristics of an optical beam, a deformable plate or the like.

The element may be made of a first material having a first thermal expansion coefficient. In particular, the element can also be formed from two or more joined materials.

According to one embodiment, the connecting element has on its first side and on its second side a boundary zone whose thermal expansion coefficient on the first side 30-100%, preferably 35-90%, more preferably 70-80%, of the first coefficient of thermal expansion and on the second side 15-100%, preferably 25-85%, more preferably 55-75%, of the second thermal expansion coefficient. In particular, the boundary zone on the first and / or second side may have a thickness of between 0.5 mm and 5 mm, preferably between 0.5 and 2 mm, more preferably between 0.5 and 1 mm.

The thickness of the boundary zone may be, for example, 20-100% on the first side and 10-100% on the second side of the largest cross-sectional dimension of a corresponding bonding surface. The term "bonding surface or joint surface" is understood in particular to mean the surface with which the connecting element is connected or joined to the element or to the retaining element.

In particular, the material of the bondable metal matrix may have a thermal expansion coefficient that is approximately equal to or less than the first thermal expansion coefficient. Also, the thermal expansion coefficient of the material of the bondable metal matrix may be infinitesimal (ie no thermal expansion) or negative up to an application temperature of the fixture.

In particular, the grain material may have a thermal expansion coefficient that is approximately equal to or less than the first thermal expansion coefficient. Also, the thermal expansion coefficient of the grain material may have a negative thermal expansion up to an application temperature of the holding device.

According to a further embodiment, the inert grain material of the mixture consists, at least in the boundary zone on the first side, of a material different from the first material and has a lower coefficient of thermal expansion than the first material up to an application temperature of the holding device.

For example, the second material may have a thermal expansion coefficient greater than 2% lower.

According to a further embodiment, the grain material of the connecting element, at least in the boundary zone adjacent to the element up to the application temperature of the holding device, has a thermal expansion coefficient of 22-95% of that of the first material.

According to a further embodiment, the thermal expansion coefficient of the boundary zone on the first side up to the application temperature of the holding device is 35-90%, in particular 70-80%, of that of the first material.

According to a further embodiment, the thermal expansion coefficient of the boundary zone on the second side up to the application temperature of the holding device is 25-85%, in particular 55-75%, of that of the second material.

According to another embodiment, a proportion of the grain material in the matrix material is between 5 and 98%.

According to a further embodiment, the element and the connecting element are connected to each other by means of a material connection. According to a further embodiment, a binding layer is arranged between the first side of the connecting element and the element.

In particular, the tie layer may be an active solder or a gold coating. Preferably, the connection between the element and the connecting element is free of organic constituents.

According to a further embodiment, the holding element and the connecting element are connected to each other by means of a material connection. According to a further embodiment, a bonding layer is arranged between the second side of the connecting element and the retaining element.

In particular, the connection between the holding element and the connecting element is free of organic constituents. For example, a binding layer may be formed of an active solder, for example, the binding layer may comprise nickel. In particular, the binding layer may also be referred to as an active binding layer.

Preferably, the cohesive connection between the element and the connecting element and / or the holding element and the connecting element may be selected such that it is suitable for use in an ultra-high vacuum (UHV) environment.

According to a further embodiment, the connecting element has a plurality of layers of different grain and / or matrix materials.

In particular, each layer of the plurality of layers can be manufactured separately. The individual layers can be combined by soldering, diffusion welding or (isostatic) hot pressing. Preferably, in each case one bonding layer can be provided between in each case two layers of the plurality of layers. Furthermore, in particular to the element, a bonding layer can be provided. The Bonding layer can be made, for example, from Co; 25 Cr Ti; 19 Mn; 5 Ni; 13 Cu; 7 Cr; 7.5 Mn; 7 Ti; 2 Ni or also be formed by known active solder or MnCu or MnCo-base alloys. Other examples of materials suitable for a tie layer are shown in Table 3 of the EP 0394 828 A1 and in the DE 36 08 559 A1 to which reference is hereby incorporated by reference (incorporated by reference).

According to a further embodiment, each layer has a thermal expansion coefficient and the respective coefficients of thermal expansion differ from one another. In particular, the thermal expansion coefficients of the plurality of layers may be graded.

According to a further embodiment, the connecting element has at least one insert which is connected to the matrix material by means of a bonding layer.

The provision of inserts in the connecting element can contribute to a further stress relief. Furthermore, an adaptation of the transition between the different coefficients of thermal expansion in the connecting piece can thereby also be improved. Preferably, one or more inserts of non-metallic inert high temperature resistant material with low thermal expansion may be provided. In particular, the one or more inserts may be formed of a material that may also be used as a grain material. Preferably, the inserts are made of the same material as the grain material in the metal matrix.

According to a further embodiment, the retaining element is at least partially formed of a metallic material. For example, the holding element made of aluminum, copper, steel, a steel alloy such as AlMg5EQF25, X2CrNiMo (1712-2), SF-CuF29, CuSn6H180, CuSn8F39, CuZn40PbF43, X14CrMoS17, X17CrNl16-2, X5CrNi18.10, Ni36 / Invar, pure titanium, in particular be formed with the material designations 3.7025, 3.7035, 3.7055, 3.7065 and / or of a titanium alloy such as TiAl6V4.

According to a further embodiment, the element is at least partially formed from a material which is selected from the group: glass, glass ceramic and / or ceramic. For example, the element of Si; SiC; SiO ₂ ; SiN; Titanium silicate glass (eg ULE ^™ ), CaF ₂ ; Quartz; Fused silica (eg Suprasil ^™ ); Borosilicate glass (eg BK7); Zerodur; MgF _{2 be} formed.

According to a further embodiment, the connecting element is resistant to ultraviolet radiation, in particular at wavelengths below 300 nm. According to a further embodiment, a connection of the connecting element to the element and a connection of the connecting element to the holding element to ultraviolet radiation, in particular at wavelengths below 300 nm, resistant.

In particular, the connecting element, the connection between the connecting element and the element and the connection between the connecting element and the holding element can be resistant to ultraviolet radiation at wavelengths between 5 nm and 300 nm.

The term "resistant" is understood in particular to mean that the connecting element, the element, the holding element and the connections between them are resistant to ultraviolet radiation. In particular, the term "resistant" may mean that the connector, member, support member, and interconnects therebetween are susceptible to exposure to ultraviolet light and, in particular, no outgassing occurs by exposure to ultraviolet light. This has the particular advantage that the holding device can be used in a VUV lithography system or an EUV lithography system.

Further, the connector, member, retainer, and connections therebetween may be suitable for use in an ultra-high vacuum. Ie. the connecting element, the element, the holding element and the connections therebetween can in particular be selected such that no outgassing occurs in operating conditions in the UHV. This also has the advantage that the holding device can be used in a VUV lithography system or an EUV lithography system.

According to a further embodiment, a plurality of holding elements are arranged distributed uniformly over a circumference of the element, wherein each of the plurality of holding elements is connected to the element via a respective connecting element.

Furthermore, a lithography system with a holding device described above is proposed, wherein the element is an optical element. In particular, an application temperature or an operating temperature of the holding device in a lithography system can be at 100 ° C. to 150 ° C.

Further possible implementations of the invention also include not explicitly mentioned combinations of features or embodiments described above or below with regard to the exemplary embodiments. The skilled person will also add individual aspects as improvements or additions to the respective basic form of the invention.

Further advantageous embodiments and aspects of the invention are the subject of the dependent claims and the embodiments of the invention described below. Furthermore, the invention will be explained in more detail by means of preferred embodiments with reference to the attached figures.

1 shows a schematic view of an EUV lithography system according to an embodiment;

2 shows a schematic perspective view of an assembly of a socket and a holding device according to a first embodiment;

3 shows a schematic cross-sectional view of the arrangement;

4 shows a schematic detail view of the holding device according to the first embodiment;

5 shows a schematic cross-sectional view of a section of a holding device according to a second embodiment; and

6 shows a schematic cross-sectional view of a section of a holding device according to a second embodiment.

In the figures, the same or functionally identical elements have been given the same reference numerals, unless stated otherwise. It should also be noted that the illustrations in the figures are not necessarily to scale.

1 shows a schematic view of an EUV lithography system 100 according to an embodiment, which is a beam-forming system 102 , a lighting system 104 and a projection system 106 includes. The beam-forming system 102 , the lighting system 104 and the projection system 106 are each provided in a vacuum housing, which is evacuated by means of an evacuation device, not shown. The vacuum housings are surrounded by a machine room, not shown, in which the drive devices are provided for the mechanical method or adjustment of the optical elements. Furthermore, electrical controls and the like may be provided in this engine room.

The beam-forming system 102 has an EUV light source 108 , a collimator 110 and a monochromator 112 on. As an EUV light source 108 For example, a plasma source or a synchrotron can be provided, which radiation in the EUV range (extreme ultraviolet range), ie z. B. in the wavelength range of 5 nm to 120 nm, preferably emit between 10 nm and 30 nm. Additionally or alternatively, a VUV light source can be provided, which radiation in the VUV range (vacuum ultraviolet range), ie z. B. in the wavelength range of 100 nm to 200 nm emits. The from the EUV light source 108 Exiting radiation is first through the collimator 110 bundled, after which by the monochromator 112 the desired operating wavelength is filtered out. Thus, the beam shaping system fits 102 the wavelength and spatial distribution of the EUV light source 108 emitted light. The from the EUV light source 108 generated EUV radiation 114 has a relatively low transmissivity by air, which is why the beam guiding spaces in the beam-forming system 102 , in the lighting system 104 and in the projection system 106 are evacuated.

The lighting system 104 has a first mirror in the example shown 116 and a second mirror 118 on. These mirrors 116 . 118 For example, they can be designed as facet mirrors for pupil shaping and guide the EUV radiation 114 on a photomask 120 ,

The photomask 120 is also designed as a reflective optical element and can be outside the systems 102 . 104 . 106 be arranged. The photomask 120 has a structure which by means of of the projection system 106 reduced to a wafer 122 or the like is mapped. For this purpose, the projection system in the beam guiding room 106 for example, a third mirror 124 and a fourth mirror 126 on. It should be noted that the number of mirrors of the EUV lithography system 100 is not limited to the number shown, and it may also be provided more or less mirror. Furthermore, the mirrors are usually curved on their front for beam shaping. Additionally or alternatively, lenses and other optical elements may be provided for beam shaping.

2 shows a schematic perspective view of an arrangement 200 from a version 202 and a holding device 204 according to a first embodiment with the aid of which an element 206 is held in the socket.

The element 206 For example, a mirror 116 . 118 . 124 . 126 , a monochromator 112 , or a photomask 120 be. Alternatively, the element 206 also a lens or retardation plate. In particular, the element 206 made of a first material having a first thermal expansion coefficient. For example, the element 206 be made of glass, glass ceramic and / or ceramic. In particular, the element of Si; SiC; SiO2; SiN; ULE, CaF2; Quartz; SUPRASIL; BK7; Zerodur; MgF2 be formed.

The element 206 is by means of a plurality of holding elements 208 in the version 202 caught. The version 202 For example, several socket sections such as an intermediate ring 210 and / or an outer ring 212 exhibit. In particular, each of the plurality of retaining elements 208 via a respective connecting element 302 ( 3 ) with the element 206 connected. The holding element 208 may be referred to in particular as a tab or feet.

In particular, holding element 208 made of a second material having a second thermal expansion coefficient. For example, the retaining element 208 be formed of a metallic material. In particular, the holding element of aluminum, steel, copper, AlMg5EQF25; TiAl6V4; SF-CuF29; CuSn6H180; CuSn8F39; CuZn40PbF43; X14CrMoS17; X17CrN16-, X5CrNi18.10, Ni36 / Invar; Pure titanium 3.7025 / 3.7035 / 3.7055 / 3.7065; X2CrNiMo (1712-2).

The coefficients of thermal expansion or coefficients of thermal expansion for selected materials can be found in Table 1 below. Table 1: material Thermal expansion coefficient (× 10 ^-6 / K) material Thermal expansion coefficient (× 10 ^-6 / K) AlMg5EQF25 24 X17CrNl16-2 10.3 X2CrNiMo (1712-2) 16 X5CrNi18.10 16.7 SF-CuF29 17 Ni36 / Invar 1.8 CuSn6H180 18.5 Pure titanium 3.7025 / 3.7035 / 3.7055 / 3.7065 8.9 CuSn8F39 18.5 CaF ₂ 18.9 CuZn40PbF43 21.1 Si 2.33 X14CrMoS17 9.9 ULE 0.03 TiAl6V4 9 Quartz Suprasil 0.51

The thermal expansion coefficients for other materials are known in the literature and can also Table 1 and Table 2 of EP 0 394 828 A1 which are hereby incorporated by reference.

The element 206 in particular, a rotationally symmetric edge 214 having a symmetry axis S. Furthermore, the element 206 a main level H ( 3 ), which are its edge 214 pierces with a closed curve.

Like in the 2 is shown, the plurality of holding elements 208 evenly over a circumference of the element 202 be arranged distributed. Preferably, the holding elements 208 be formed symmetrically to the symmetry axis S containing levels. In particular, the retaining elements 208 be arranged perpendicular to the main plane H. Also, the retaining elements 208 in the main plane H radial to the edge 214 of the element 206 be arranged. Alternatively, the retaining elements 208 tangential to the edge 214 of the element 206 be arranged. In addition, the retaining elements 208 be designed as spring joints, in particular as a leaf spring.

3 shows a schematic cross-sectional view of the arrangement 200 out 2 , Like from the 3 can be removed is each of the plurality of holding elements 208 via a connecting element 300 coupled with the element. In particular, the connecting element 300 Also referred to as a connector, adapter or intermediate element.

The connecting element 300 is especially on a first page 302 with the element 206 and on a second page 304 with the holding element 208 connected. A section of the links between the element 206 , the connecting element 300 and the holding element 208 is in the 4a shown.

In the 4a is on the left side of the holding device 202 the holding element 208 shown schematically. On the right is the element 206 shown schematically. Between the holding element 208 and the element 206 is the connecting element 300 arranged.

The connecting element 300 consists of a mixture of a bondable metal matrix and an inert grain material. In particular, the connecting element 300 multiple layers 400 . 402 . 404 exhibit, in which a metal content from the first side 302 to the second 304 changes. This causes the thermal expansion coefficient of the connecting element 300 from the element 206 to the holding element 208 changes. Between the element 206 and the connecting element 300 in particular, a binding layer 404 be arranged.

For example, the holding element may be formed of Incoloy MA956 (Fe 20 Cr 4.5 Al 0.5 Ti 0.5 Y203) and the element 206 from a ceramic (eg SiC). The binding layer 404 may for example be an active foil (Ag4Ti) with a thickness of 0.2 mm.

In particular, a thickness of the connecting element 300 between 1 mm and three times the maximum cross-sectional dimension of the connecting element 300 , preferably the simplest of the largest cross-sectional dimension, be.

The connecting element 300 includes two layers ( 400 and 402 ): The to the SiC element 206 adjacent layer 402 may consist of a mixture of grain material (69 ReSi + 31 Re3Si) with a grain diameter of 0.025 to 0.04 mm and of a matrix material (Fe 24.5 Ni 1.73 Cr 0.37 Mn 0.2 Si 0.04 C 2 , 32 Ti) with a grain diameter of 0.006 mm. The grain content in the matrix material is for example 80%.

Preferably, the mixture of grain material and matrix material adjacent to the element 206 a lower thermal expansion coefficient than the material of the element 206 exhibit. This can be in the border area to the element 206 especially if it has a brittle bonding layer ( 5 . 6 ), provide for a thermal expansion sink. For example, the second material may have a thermal expansion coefficient greater than 2% lower.

Furthermore, a gradient of the thermal expansion in the connecting element 300 in the direction perpendicular to the joining surfaces or binding surfaces, ie perpendicular to the first side 302 and the second page 404 , due to the appropriately selected material proportions and / or types of material in the connecting element 300 maximum 40% / mm.

The to the Incoloy holding element 208 bordering layer 400 consists of a mixture of the same grain material but with a grain diameter of 0.025 to 0.1 mm with the same matrix material. Here, the grain content in the matrix material is 65%.

In particular, the proportion of the grain material in the matrix material may be between 5 and 98%.

In particular, a shape and / or a size of the grains of the grain material may be arbitrary. For example, a particle diameter between 0.01 mm to 3 mm can be selected. Additionally or alternatively, needle-shaped grains with a diameter between 0.001 mm and 0.1 mm and a length of up to 1 mm may also be used. In particular, the grain material, a grain diameter and / or a grain fraction within the connecting element 300 be staggered. Also, you can have multiple layers 400 . 402 , in particular up to 9 layers, be provided, wherein the grain fraction and / or grain diameter to that of the element 206 and the holding element 208 decrease, which has the larger thermal expansion coefficient.

The connecting element 300 can each on its first page 302 and his second page 304 have a boundary zone whose thermal expansion coefficient on the first side 302 30-100%, preferably 35-90%, more preferably 70-80%, of the first thermal expansion coefficient and on the second side 304 15-100%, preferably 25-85%, more preferably 55-75%, of the second thermal expansion coefficient.

In particular, the border zone may be on the first and / or second side 302 . 304 a thickness of between 0.5 mm and 5 mm, preferably between 0.5 and 2 mm, more preferably between 0.5 and 1 mm.

Also, the thickness of the boundary zone, for example, on the first page 302 20-100% and on the second page 304 10-100% of the largest cross-sectional dimension of a corresponding binding surface, ie the first side 302 or the second page 304 be.

4b shows on the Y-axis a relative length expansions of the individual materials of the composite body holding element 208 , Connecting element 300 and element 206 at a temperature increase to 1200K. The length expansion reduction in the intermediate piece to 16% (in 400 ) and 37% (in 402 ) to be joined, metallic and ceramic body part reduces the thermal stresses in the SiC element 206 ,

Without connector 300 can depending on how the item 206 is installed in the lithographic system (symmetry axis S parallel or perpendicular to Erdanziehung) and, depending on which shape of the holding element 208 (Tabs, ring, circle segment) is used, one by a direct cohesive connection between element 206 and holding element 208 in the element 206 induced voltage between 0.0019 N / mm ² and 0.0043 N / mm ^{2 can be} induced. With the connecting element 300 This induced voltage can be reduced by up to 70%.

Further examples of suitable grain-bondable metal matrix combinations for the fastener 300 depending on the materials for retaining element 208 and element 206 are in Table 4 of EP 0 394 828 A1 on pages 14 to 17 together with suitable particle sizes, suitable number of layers and a boundary composition on the first and second side.

Furthermore, the shows 6 of the EP 0 394 828 A1 , which is hereby incorporated by reference, a curve of a thermal expansion coefficient for various grain materials and matrix materials as a function of the temperature. With the aid of such a diagram, with knowledge of the operating temperature or the application temperature, a choice of suitable grain and matrix materials can be made. In particular, the operating temperatures in a lithography plant may be between 20 ° C and 200 ° C, preferably between 100 ° C and 150 ° C.

5 shows a schematic cross-sectional view of a section of a holding device 500 according to a second embodiment. At the holding device 500 is a holding element 502 made of copper with an element 504 made of ceramic via a connecting element 506 connected, which consists of a grain-containing matrix with continuously changed composition and with a ceramic insert 508 exists and has a binding layer 510 and possibly 510 ' with the adjacent retaining element 502 and element 504 related. The edge of the element 504 may be bevelled, for example, which reduces cracking from the interface.

The deposit 508 In particular, it may preferably be in the form of plates or flat cones having a thickness greater than 0.1 mm to about 8 mm and a smaller diameter (eg 10% lower) than the connecting element 506 have yourself. In particular, the diameter of the insert 508 between 20 and 90% of the diameter of the connecting element 506 be.

6 shows a schematic cross-sectional view of a section of a holding device 600 according to a third embodiment. At the holding device 600 is a layered fastener 606 with a metallic holding element 602 and an element 604 made of glass over binding layers 610 . 610 ' connected. The connecting element 600 has in particular an insert 608 made of ceramic. The connecting element also has a plurality of layers 612 . 614 . 616 on, with the layers 612 . 614 . 616 can be composed differently. In particular, the grain material may have a decreasing grain size relative to the metallic holding element 602 towards. A suitable composition for the layers 612 . 614 . 616 For example, the EP 0 394 828 A1 be removed.

The surface of the ceramic insert 608 as well as the element 604 may be provided with a bonding layer of Cu 11.5 Co 17.5 Mn 18.4 Ti 18.4 Cr 5.4 Ni 0.11 Fe in a thickness of 0.08 mm. Another tie layer 610 ' said composition can be between the metallic holding element 602 and the connecting element 606 be provided. The entire holding device is preferred 600 formed by diffusion welding, soldering or hot isostatic pressing (HIP). Suitable conditions and methods may be used in particular EP 0 394 828 A1 be removed.

The following are examples of materials that can be used as a bondable metal matrix of the connecting element. For example, the bondable metal matrix at least in the boundary zone adjacent to the element of one of the alloys Fe 18.5 Ni 0.01 Mn 0.1 Si 9 Co 4.9 Mo 0.62 Ti 0.1 P 0.05 Ca 0, 02 Zr 0.01 S 0.003 B; Fe 30 Ni 8 Cr 25 Co; Fe 3.94 Ni 2.5 Cr 0.01 Mn 0.13 Si 0.168 C 0.39 V 0.026 S 0.01 P; preferably Fe 34 Ni 3.5 Co; Fe 31 Ni 0.38 Mn 6 Co; Fe 32 Ni 5 Co; Fe 39.56 Ni 0.22 Mn 0.12 Si 0.22 Al 0.04 Cu; especially Fe 24.5 Ni 1.73 Cr 0.37 Mn 0.2 Si 0.04 C 2.32 Ti; Fe 23.5 Ni 1.77 Cr; Fe 23.5 Ni 1.77 Cr 0.53 Mn 0.34 Si 0.05 C 3.28 Ti; Fe 24.5 Ni 1.73 Cr. Further examples of materials of the bondable metal matrix are shown in Table 2 of the EP 0 394 828 A1 on pages 11 to 13, together with their respective coefficients of thermal expansion, to which reference is hereby made.

The following are examples of materials that can be used as the inert grain material of the connector. For example, the grain material of the connecting element, at least in the boundary zone adjacent to the element by B ₄ C; HfC; AlN; BN; HfN; TaN; WC2CO; preferably by HfO 2.5 Fe 0.3 Mg 0.1 Ti 0.1 Ca; W ₂ C 25 WC + 2 CO (98 + 2%) ZrB ₂ + Cr (5 to 20% by volume); Ta ₂ O ₅ ; W ₂ C + WC (0 to 60%); ZrO ₂ 0.37 W 0.37 Co 0.37 C 6.4 Ti; in particular by W ₂ C; BaO.TiO ₂ ; Nb ₂ O ₅ ; Ti ₂ O ₃ ; WO ₂ ; Nb ₂ O ₅ .V ₂ O ₅ ; Ta ₂ O ₅ .V ₂ O ₅ ; 2ZnO · V ₂ O ₅ ; SrO.ZrO ₂ ; and specifically by ZrO ₂ 6.4 Ti or ZrO ₂ 2.01 Ti. Further examples of materials that can be used as the inert grain material of the connecting element are shown in Table 1 of the EP 0 394 828 A1 on pages 8 to 10 together with their respective coefficients of thermal expansion, to which reference is hereby made.

Although the present invention has been described with reference to embodiments, it is variously modifiable.

LIST OF REFERENCE NUMBERS

100

EUV lithography system

102

Beam shaping system

104

lighting system

106

projection system

108

EUV-light source

110

collimator

112

monochromator

114

EUV radiation

116, 118, 124, 126

mirror

120

photomask

122

wafer

200

arrangement

202

version

204

holder

206

element

208

retaining element

210

intermediate ring

212

outer ring

214

edge

300

connecting element

302

first page

304

second page

400, 402

layers

404

bonding layer

500, 600

holder

502, 602

retaining element

504, 604

element

506, 606

connecting element

508, 608

inlay

510, 510 ', 610, 610'

bonding layer

612, 614, 616

layers

H

Main plane

S

axis of symmetry

QUOTES INCLUDE IN THE DESCRIPTION

This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Cited patent literature

• EP 0964281 A1 [0002]
• EP 0394828 A1 [0007, 0007, 0012, 0012, 0032, 0062, 0082, 0083, 0086, 0087, 0088, 0089]
• DE 3608559 A1 [0032]

Claims (17)

Holding device ( 204 . 500 . 600 ) for holding an element ( 206 . 504 . 604 ) in one version ( 202 ) in a lithography plant ( 100 ), where the element ( 206 . 504 . 604 ) is made of a first material having a first thermal expansion coefficient and the holding device ( 204 . 500 . 600 ): at least one retaining element ( 208 . 502 . 602 ), which is made of a second material having a second coefficient of thermal expansion, wherein the retaining element ( 208 . 502 . 602 ) is adapted to the element ( 206 . 504 . 604 ) at least partially in the version ( 202 ), and at least one connecting element ( 300 . 506 . 606 ), that between the element ( 206 . 504 . 604 ) and the retaining element ( 208 . 502 . 602 ), wherein a first side ( 302 ) of the connecting element ( 300 . 506 . 606 ) with the element ( 206 . 504 . 604 ) and a second page ( 304 ) of the connecting element ( 300 . 506 . 606 ) with the retaining element ( 208 . 502 . 602 ), wherein the connecting element ( 300 . 506 . 606 ) is made of a material that is adapted to compensate for a difference between the first coefficient of thermal expansion and the second coefficient of thermal expansion, wherein the material of the connecting element ( 300 . 506 . 606 ) has a mixture of a bondable metal matrix and an inert grain material, wherein a metal content of the element ( 206 . 504 . 604 ) to the retaining element ( 208 . 502 . 602 ) changes so that the coefficient of thermal expansion of the connecting element ( 300 . 506 . 606 ) of the element ( 206 . 504 . 604 ) to the retaining element ( 208 . 502 . 602 ) changes. Holding device according to claim 1, wherein the connecting element ( 300 . 506 . 606 ) on its first page ( 302 ) and its second page ( 304 ) has a boundary zone whose thermal expansion coefficient on the first side ( 302 ) 30-100% of the first thermal expansion coefficient and on the second side ( 304 ) Is 15-100% of the second thermal expansion coefficient. Holding device according to claim 2, wherein the inert grain material of the mixture at least in the boundary zone on the first side ( 302 ) consists of a different material from the first material and up to an application temperature of the holding device ( 204 . 500 . 600 ) has a lower thermal expansion coefficient than the first material. Holding device according to claim 3, wherein the grain material of the connecting element ( 300 . 506 . 606 ) at least in the element ( 206 . 504 . 604 ) adjacent boundary zone to the application temperature of the holding device ( 204 . 500 . 600 ) has a thermal expansion coefficient of 22-95% of that of the first material. Holding device according to one of claims 2 to 4, wherein the thermal expansion coefficient of the boundary zone on the first side ( 302 ) up to the application temperature of the holding device ( 204 . 500 . 600 ) Is 35-90%, in particular 70-80%, of that of the first material, and / or the thermal expansion coefficient of the boundary zone on the second side ( 304 ) up to the application temperature of the holding device ( 204 . 500 . 600 ) Is 25-85%, especially 55-75%, of that of the second material. Holding device according to one of claims 1 to 5, wherein a proportion of the grain material in the matrix material is between 5 and 98%. Holding device according to one of claims 1 to 6, wherein the element ( 206 . 504 . 604 ) and the connecting element ( 300 . 506 . 606 ) are connected to each other by means of a material connection and / or between the first side ( 302 ) of the connecting element ( 300 . 506 . 606 ) and the element ( 206 . 504 . 604 ) a binding layer ( 510 . 510 ' . 610 . 610 ' ) is arranged. Holding device according to one of claims 1 to 7, wherein the retaining element ( 208 . 502 . 602 ) and the connecting element ( 300 . 506 . 606 ) are connected to each other by means of a material connection and / or between the second side ( 304 ) of the connecting element ( 300 . 506 . 606 ) and the retaining element ( 208 . 502 . 602 ) a binding layer ( 510 . 510 ' . 610 . 610 ' ) is arranged. Holding device according to one of claims 1 to 8, wherein the connecting element ( 300 . 606 ) a plurality of layers ( 400 . 402 . 612 . 614 . 616 ) of different grain and / or matrix materials. Holding device according to claim 9, wherein each layer ( 400 . 402 . 612 . 614 . 616 ) has a thermal expansion coefficient and the respective thermal expansion coefficients differ from each other. Holding device according to one of claims 1 to 10, wherein the connecting element ( 506 . 606 ) at least one deposit ( 508 . 608 ), which by means of a bonding layer ( 510 . 510 ' . 610 . 610 ' ) is connected to the matrix material. Holding device according to one of claims 1 to 11, wherein the retaining element ( 208 . 502 . 602 ) is at least partially formed of a metallic material. Holding device according to one of claims 1 to 12, wherein the element ( 206 . 504 . 604 ) is at least partially formed of a material selected from the group consisting of glass, glass ceramic and / or ceramic. Holding device according to one of claims 1 to 13, wherein the connecting element ( 300 . 506 . 606 ) is resistant to ultraviolet radiation, in particular at wavelengths below 300 nm. Holding device according to one of claims 1 to 14, wherein a compound of the connecting element ( 300 . 506 . 606 ) with the element ( 206 . 504 . 604 ) and a connection of the connecting element ( 300 . 506 . 606 ) with the retaining element ( 208 . 502 . 602 ) are resistant to ultraviolet radiation, in particular at wavelengths below 300 nm. Holding device according to one of claims 1 to 15, wherein a plurality of holding elements ( 208 . 502 . 602 ) evenly over a circumference of the element ( 206 . 504 . 604 ) are arranged distributed, wherein each of the plurality of retaining elements ( 208 . 502 . 602 ) via a respective connecting element ( 300 . 506 . 606 ) with the element ( 206 . 504 . 604 ) connected is. Lithography plant ( 100 ) with a holding device ( 204 . 500 . 600 ) according to any one of claims 1 to 16, wherein the element ( 206 . 504 . 604 ) is an optical element.

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