TW201633516A - Semiconductor device and method for manufacturing same - Google Patents

Abstract

This semiconductor device is provided with: a substrate which is provided with a terminal on the upper surface; a semiconductor element which is arranged on the upper surface of the substrate and has an electrode that is electrically connected to the terminal of the substrate; a transparent member which is obtained by integrally forming a transparent flat plate that covers the upper part of the semiconductor element with a plurality of leg parts for providing a predetermined gap between the flat plate and the upper surface of the substrate; and a sealing member which is arranged so as to surround the semiconductor element between the upper surface of the substrate and the lower surface of the transparent member, said lower surface facing the upper surface of the substrate.

Description

Semiconductor device and method of manufacturing same

The present invention relates to a semiconductor device in which a semiconductor element is sealed by a sealing member and a method of manufacturing the same.

In a semiconductor device having a functional region such as an optical sensor, it is known that a semiconductor element is mounted on a substrate, a space is provided in an upper portion of the semiconductor element, and a cover is covered, and a non-conductive resin is filled between the cover and the substrate. (refer to Patent Document 1).

Patent Document 1: Japanese Laid-Open Patent Publication No. 2006-278726

According to the invention described in Patent Document 1, since the cover system covering the upper portion of the semiconductor element is composed of a plurality of members such as a holder and a lens barrel, the cost is high.

A semiconductor device according to a first aspect of the present invention includes: a substrate having a terminal provided thereon; a semiconductor element disposed on the upper surface of the substrate and having an electrode electrically connected to a terminal of the substrate; and a transparent member covered by a transparent plate covering the upper portion of the semiconductor element And a plurality of legs for forming a predetermined gap between the flat plate and the upper surface of the substrate; and a sealing member disposed around the periphery of the semiconductor element between the upper surface of the substrate and the lower surface of the transparent member facing the upper surface of the substrate.

According to a second aspect of the invention, in the semiconductor device of the first aspect, the electrode of the semiconductor element is preferably provided on the upper surface of the semiconductor element, and the electrode of the semiconductor element and the terminal of the substrate are electrically connected by a metal wire.

According to a third aspect of the present invention, in the semiconductor device of the first or second aspect, the leg portion is preferably attached to the upper surface of the substrate.

According to a fourth aspect of the invention, in the semiconductor device of any one of the first to third aspect, preferably, the semiconductor element has a rectangular shape; the substrate has a rectangular shape larger than the semiconductor element; the transparent member has a rectangular shape larger than the semiconductor element; and the semiconductor The element is disposed at a central portion of the substrate such that each side of the semiconductor element is located inside each side of the substrate; the leg portion is disposed at four corners of the transparent member; and the sealing member seals between the adjacent leg portions.

According to a fifth aspect of the invention, in the semiconductor device of the third aspect or the fourth aspect, preferably, the outer circumferential side surface of the sealing member and the four side edges of the substrate are formed in the same plane.

According to a sixth aspect of the invention, in the semiconductor device of any one of the first to fifth aspects, the upper surface and the lower surface of the transparent member are preferably parallel to each other.

A method of manufacturing a semiconductor device according to a seventh aspect of the present invention, comprising: a step of preparing a plurality of semiconductor device formation regions for respectively forming a semiconductor device; and forming a material substrate of the terminal in each semiconductor device formation region; a step of arranging a semiconductor element having an electrode thereon in each semiconductor device formation region; a step of bonding each electrode of the semiconductor element and a terminal formed on the material substrate; and having a plurality of legs and covering the upper portion of the semiconductor element The member is disposed in each of the semiconductor device forming regions of the material substrate, and separates the transparent members disposed in the plurality of semiconductor device forming regions from each other; and on the material substrate and the transparent member opposite to the material substrate a step of providing a sealing member; and a step of separating the material substrate from each semiconductor device forming region.

According to a seventh aspect of the invention, in the method of manufacturing the semiconductor device of the seventh aspect, the sealing member is preferably disposed between the upper surface of the material substrate and the lower surface of the transparent member facing the upper surface of the material substrate. In the step, a sealing member is injected between the transparent members which are disposed in the plurality of semiconductor device forming regions of the material substrate and separated from each other, and the opening of the material substrate, the lower surface of the transparent member, and the side of the leg portion are sealed.

According to a ninth aspect of the present invention, in the method of manufacturing the semiconductor device of the seventh aspect, the method of manufacturing the transparent member is further provided, and the step of manufacturing the transparent member includes: preparing to have a plurality of a step of transparent member material sheet of the area of the transparent member; a step of forming a first groove having a width of the gap of the foot portion in the transparent member material sheet by moving the cutting tool in one direction; by moving the cutting tool Moving in a direction orthogonal to one direction, forming a step of forming a second groove orthogonal to the first groove with respect to the unprocessed portion of the transparent member material sheet in which the first groove is not formed; and the transparent member The step of cutting the material sheet along the extending direction of the groove.

According to the present invention, since the upper portion of the semiconductor element is covered with the transparent member having a plurality of leg portions, the cost increase of the semiconductor device can be suppressed.

1,1A~1D‧‧‧Semiconductor device

1r‧‧‧Semiconductor device formation area

10‧‧‧Circuit board (substrate)

10P‧‧‧material circuit board (material substrate)

11‧‧‧ Terminal

20‧‧‧Semiconductor components

22‧‧‧Electrode

30P‧‧‧Transparent member intermediate assembly board

32,34‧‧‧ slots

40‧‧‧Transparent components

41‧‧‧ top board

42‧‧‧foot

50‧‧‧ Sealing members

50p‧‧‧Resin materials

S‧‧‧Voids

Fig. 1(a) is a perspective view schematically showing an appearance of a semiconductor device according to an embodiment, and Fig. 1(b) is a perspective view schematically showing a semiconductor device having an internal structure of a device viewed through a transparent member.

2(a) is a plan view of the semiconductor device shown in FIG. 1, and FIG. 2(b) is a cross-sectional view taken along line IIb-IIb of FIG. 2(a).

Fig. 3 is a perspective view showing the appearance of a transparent member.

4(a) to 4(c) are perspective views for explaining a method of manufacturing a transparent member.

5 is a plan view showing a semiconductor device manufacturing method as viewed from above, showing a step of mounting a semiconductor element on a substrate.

Figure 6 is a diagram showing the steps following Figure 5.

Figure 7 is a diagram showing the steps following Figure 6.

Figure 8 is a diagram showing the steps following Figure 7.

Figure 9 is a diagram showing the steps following Figure 8.

Fig. 10 (a) and (b) are views showing a modification.

Fig. 11 (a) and (b) are views showing a modification.

(Structure of semiconductor device)

Hereinafter, an embodiment of a semiconductor device of the present invention will be described with reference to the drawings.

Fig. 1(a) is a perspective view schematically showing the appearance of a semiconductor device according to an embodiment, and the description of the internal structure of the device through the transparent member to be described later is omitted. Fig. 1(b) is a perspective view schematically showing a semiconductor device through which the internal structure of the device is observed through a transparent member to be described later. Fig. 2(a) is a plan view, as seen from above, of the semiconductor device shown in Fig. 1, showing the internal structure of the device viewed through the transparent member in a schematic manner. Fig. 2(b) is a cross-sectional view taken along line IIb-IIb of Fig. 2(a). 3 is a perspective view showing the appearance of a transparent member.

For convenience of explanation, the left and right direction, the front and rear direction, and the up and down direction of the semiconductor device are as shown in the drawing. Further, in Fig. 2(a), the sealing member is described as a mesh bottom.

The semiconductor device 1 includes a circuit board 10 which is a substrate, a semiconductor element 20, a transparent member 40, and a sealing member 50.

The semiconductor element 20 has a functional region 21 such as a light receiving region on the upper surface 20a, and die bonding On the upper surface 10a of the circuit board 10 (see Fig. 2(b)). A plurality of electrodes 22 are arranged around the functional region 21 of the semiconductor element 20. On the upper surface 10a of the circuit board 10, terminals 11 are arranged around the semiconductor element 20 (see Fig. 2(b)). Each of the electrodes 22 of the semiconductor element 20 is electrically connected to the terminal 11 of the circuit substrate 10 by a metal wire 23. The connection between the electrode 22 and the terminal 11 is a wire bonding method using a metal wire such as gold, silver, copper, or alloy. The lower terminal portion 10b (see FIG. 2(b)) of the circuit board 10 is formed with an external terminal portion 12 that is connected to the corresponding terminal 11 through a through hole (not shown).

The semiconductor element 20 has a rectangular shape in a plan view, and the circuit board 10 has a rectangular shape that is larger than the semiconductor element 20 in a plan view. The semiconductor element 20 is disposed substantially at the center of the circuit board 10, and the opposite sides of the semiconductor element 20 are disposed inside the same length from the corresponding side of the circuit board 10.

The transparent member 40 shown in FIG. 3 is disposed on the upper surface 10a of the circuit board 10. For convenience of explanation, in Fig. 3, the transparent members are illustrated as being opposite to each other. The transparent member 40 includes a top plate 41 which is a flat plate having a rectangular shape, and a leg portion 42 which extends downward at four corners of the top plate 41. The leg portion 42 is integrally formed with the top plate 41. That is, the transparent member 40 is integrally formed, and the individually formed top plate 41 and the leg portion 42 are not combined.

In the present embodiment, the shape of the transparent member 40 is the same as the shape of the circuit board 10 in plan view. That is, the four side faces 40c, 40d (see FIG. 1(a)) of the transparent member 40 and the four side faces 10c, 10d (see FIG. 1(a)) of the circuit board 10 are formed in the same plane. Further, the side on which the side surface 40c of the transparent member 40 is formed is a long side, and the side on which the side surface 40d is formed is a short side. The transparent member 40 is formed of a transparent resin such as transparent glass or acrylic resin. Therefore, in the transparent member 40, not only the top plate 41 but also the leg portion 42 is also transparent. In Fig. 3, the leg portion 42 is in the shape of a corner post. However, the feet The shape of the portion 42 may also be a cylindrical shape, a conical trapezoidal shape, a pyramidal trapezoidal shape, or the like.

The upper surface 41a and the lower surface 41b of the top plate 41 are formed flat over the entire surface. The upper surface 41a and the lower surface 41b of the top plate 41 are parallel. That is, the top plate 41 is a parallel flat plate and does not have a positive or negative bending force. Therefore, the top plate 41 does not converge and diverge the light transmitted through the top plate 41. The lower surface 42a of the leg portion 42 is parallel to the upper surface 41a and the lower surface 41b of the top plate 41. For convenience of explanation, the side surface of the side surface of the leg portion 42 where the adjacent leg portions 42 face each other is referred to as an inner side surface 42b.

The lower surface 42a (see FIG. 3) of each leg portion 42 is attached to the upper surface 10a of the circuit board 10 by an adhesive (not shown). The height (the length in the up and down direction) from the lower surface 42a of the leg portion 42 to the lower surface 41b of the top plate 41, that is, the leg length h of the leg portion 42, is formed to be larger than the terminal 11 and the electrode as shown in Fig. 2(b). 22 The height of the metal wire 23 to be connected. That is, the lower surface 41b of the top plate 41 is located above the maximum height portion 23a of the metal wire 23 which protrudes from the upper surface 20a of the semiconductor element 20. As described above, the transparent member 40 is disposed at the center in the left-right direction and the front-rear direction of the circuit board 10, and covers the entire semiconductor element 20. As shown in FIG. 2(b), a gap portion S is formed between the upper surface 20a of the semiconductor element 20 and the lower surface 41b of the top plate 41 of the transparent member 40.

As shown in FIG. 2(a), each leg portion 42 is disposed on the outer side of the semiconductor element 20 in plan view. Further, as shown in FIG. 2(b), the terminals 11 formed on the upper surface 10a of the circuit board 10 are located between the adjacent leg portions 42.

The sealing member 50 is formed on the upper surface 10a of the circuit board 10 so as to surround the outer periphery of the semiconductor element 20, and seals the opening of the side surface of the semiconductor device 1. Specifically, the sealing member 50 seals the space between the adjacent leg portions 42, that is, the upper surface 10a of the circuit board 10, the lower surface 41b of the top plate 41, and the inner side surface 42b of the leg portion 42. The method of forming the sealing member 50 will be described later.

As shown in FIG. 2(b), the sealing member 50 is provided between the upper surface 10a of the circuit board 10 and the lower surface 41b of the top plate 41. The sealing member 50 covers a predetermined range of the terminal 11 of the circuit board 10 and the terminal 11 side of the metal wire 23. In the present embodiment, the inner circumferential side surface 50a of the sealing member 50 opposed to the side surface of the semiconductor element 20 is not in contact with the side surface of the semiconductor element 20, but may be in contact with the side surface of the semiconductor element 20. In the present embodiment, the sealing member 50 does not cover a predetermined length formed on the electrode 22 side of the upper surface 20a of the semiconductor element 20 and the electrode 22 side of the metal wire 23. However, the sealing member 50 may be configured to cover a predetermined range of the electrode 22 side of the metal wire 23 and the electrode 22 as long as the functional region 21 of the semiconductor element 20 is not covered.

The semiconductor device 1 shown in Figs. 1 and 2 is manufactured in plural numbers. The circuit board 10, the semiconductor element 20, and the transparent member 40 are individually manufactured. Hereinafter, an example of a method of manufacturing a plurality of transparent members 40 in high yield and at low cost will be described.

(Manufacturing method of transparent member)

An example of a method of manufacturing the transparent member 40 when the four semiconductor elements 20 are manufactured at a time will be described with reference to Figs. 3 and 4(a) to 4(c). For convenience of explanation, the dimensions of the respective portions of the transparent member 40 are defined as shown in FIG. That is, the height of the transparent member 40 is H, the length of the leg of the leg portion 42 is h, the dimension of the leg portion 42 in the left-right direction is d1, and the dimension of the leg portion 42 in the front-rear direction is d2. The inner side surface 42b of the right and left leg portions 42 is spaced apart from each other by W1, and the inner side surface 42b of the front and rear leg portions 42 is spaced apart from each other by W2.

A flat plate (not shown) having a plurality of transparent members 40, that is, a rectangular transparent member material plate, is prepared. The thickness of the transparent member material sheet is the same as the height H (the length in the up and down direction) of the transparent member 40 illustrated in FIG.

The rectangular transparent member material plate is processed, as shown in Fig. 4(a), formed A plurality of slots 32 extending in the front-rear direction. The width of the groove 32 is the same as the interval W1 between the inner side faces 42b of the left and right leg portions 42 of the transparent member 40. That is, the width of the groove 32 is the same as the gap between the left and right leg portions 42 of the transparent member 40. The depth of the groove 32 is the same as the leg length h of the foot portion 42. Each of the grooves 32 adjacent to each other in the left and right directions is formed in parallel so as to separate twice (2d1) from the dimension d1 of the leg portion 42 of the transparent member 40 in the left-right direction. That is, each of the grooves 32 is processed so as to form the groove unprocessed portion 31 having a length 2d1 between the adjacent grooves 32. The groove 32 is formed by, for example, moving the cutting tool in the front-rear direction.

In the both side portions of the transparent member material sheet in the left-right direction, the groove 32 is formed at the same position as the dimension d1 of the left and right direction of the leg portion 42 of the transparent member 40 from the left and right side faces 37 to the end portions of the grooves 32. That is, when the grooves 32 are formed, that is, the walls KBL, KBR having the width d1 are formed on the left and right end edges of the transparent member material sheet, and the wall KBC having the width of d1 × 2 is formed in the central portion of the transparent member material sheet, That is, the groove unprocessed portion 31.

Then, when the left and right walls KBL, KBR and the central wall KBC are formed in the front and rear directions at two positions in the front-rear direction, that is, the length W2, that is, the groove 34 having the width W2, as shown in FIG. 4(b), that is, in the transparent The surface of the member material sheet forms nine projections 42Xa to 42Xd. The groove 34 is formed, for example, by moving the cutting tool in the left-right direction, as in the case of forming the groove 32.

The projection 42Xa at the four corners of the transparent member material sheet has a rectangular cross section of the same length d1 × d2 as the leg portion 42 of Fig. 3 . The projection 42Xb at the center portion is a rectangular cross section of length (2 × d1) × (2 × d2). The projection 42Xc at the rear ends before the central projection 42Xb is sandwiched in the front-rear direction is a rectangular cross section of d2 × (2 × d1). The projection 42Xd at the left and right ends of the central projection 42Xb sandwiching the right and left directions is a rectangular cross section of d1 × (2 × d2). The groove 34 is formed at a position at which the size of each of the above portions is set. The width W2 of the groove 34 is the interval W2 between the inner side faces 42b of the leg portions 42 before and after the transparent member 40. Deep groove 34 The degree is the same as the foot length h of the foot 42.

In the above manner, the transparent member intermediate collecting plate 30P shown in Figs. 4(b) and 4(c) is formed of a transparent member material sheet.

Further, the widths of the left and right walls KBL and KBR may be made larger than d1 in advance, and after the grooves 32 are formed, the left and right side faces 37 are cut so that the widths of the walls KBL and KBR become d1. Further, the lengths of the front and rear projections 42Xc in the front and rear directions may be made larger than d2 in advance, and after the grooves 34 are formed, the front and rear side faces 37 are cut so that the length of the projections 42Xc in the front and rear directions becomes d2.

After the transparent member intermediate collecting plate 30P is formed, the transparent member intermediate collecting plate 30P is cut at the cutting position indicated by the two-dot chain line in Fig. 4(c). This cutting position is the intermediate position between the adjacent grooves 32 and the intermediate position between the adjacent grooves 34. Thereby, a plurality of transparent members 40 can be efficiently produced.

In the above description, the case where the grooves 32, 34 are formed in the transparent member material sheet is exemplified. This is an example of manufacturing four transparent members 40 for use in four semiconductor devices at a time. It is also possible to further increase the number of grooves 32, 34 formed in the transparent member material sheet. Further, only one of the grooves 32 formed in the transparent member material sheet may be cut by the intermediate positions of the adjacent grooves 34 to obtain the transparent member 40. This is an example of manufacturing two transparent members 40 for two semiconductor devices at a time.

The method of manufacturing the transparent member 40 described above is suitable for the case where the transparent member 40 is formed of glass. In the case where the transparent member 40 is formed of a resin, the transparent member intermediate collecting plate 30P in which the grooves 32, 34 are formed as shown in Fig. 4 (b) can be formed by a die method or the like.

(Method of Manufacturing Semiconductor Device)

A method of manufacturing a semiconductor device will be described with reference to FIGS. 5 to 9.

A material circuit substrate (material substrate) 10P for forming a plurality of semiconductor device forming regions 1r is prepared. In Fig. 5, each semiconductor device formation region is indicated by symbol 1r. In the semiconductor device forming region 1r of the material circuit board 10P, a terminal 11 and an external terminal portion 12 through which the through hole is connected to the terminal 11 are formed (see FIG. 2(b)).

In the following, a case where three semiconductor devices 1 in the left-right direction and three in the front-rear direction are formed on the material circuit board 10P is exemplified, but a larger or smaller number of semiconductor devices 1 can be formed on the material circuit substrate 10P. The planar shape of each semiconductor device forming region 1r is the same as the size and shape of the semiconductor device 1 in plan view. In other words, each of the semiconductor device forming regions 1r is a region in which two long sides extending in the left-right direction and two short sides extending in the front-rear direction are surrounded.

As shown in FIG. 5, in each semiconductor device formation region 1r, the semiconductor element 20 is die-bonded to fix the semiconductor element 20 to the material substrate, that is, the material circuit substrate 10P. Next, the electrode 22 of the semiconductor element 20 is connected to the terminal 11 of the semiconductor device forming region 1r formed in the material circuit substrate 10P by wire bonding.

As shown in FIG. 6, the transparent member 40 is fixed in each semiconductor device formation region 1r. The lower surface 42a (see FIG. 3) of the leg portion 42 of the transparent member 40 is then fixed to the material circuit board 10P by an adhesive (not shown). A gap is provided between the front and rear and the left and right adjacent transparent members 40.

As shown in FIG. 7, the semiconductor device forming region 1r adjacent to each other in the left-right direction, that is, the semiconductors between the left and right adjacent transparent members 40 and the left end side and the right end side while moving the dispenser in the front-rear direction A liquid resin material 50p is injected into the side edge side of one of the device forming regions 1r. The resin material 50p is a sealing member 50 before curing. The resin material 50p faces the upper surface of the material circuit board 10P, the lower surface 41b of the top plate 41 (see FIG. 2(b)), and the inner side of the leg portion 42. The surface 42b (see FIG. 2(b)) is wet-diffused, and flows from the outer side of the short side of the transparent member 40 toward the inner side of the semiconductor device forming region 1r.

As shown in FIG. 8, while moving the dispenser in the left-right direction, the semiconductor device forming regions 1r adjacent to each other in the front-rear direction, that is, between the front and rear transparent members 40 and the front end side and the rear end side A liquid resin material 50p is injected into one side edge side of the semiconductor device forming region 1r. The resin material 50p flows to the inner side of the semiconductor device forming region 1r from the outer side of the long side of the transparent member 40 while being diffused and diffused to the upper surface of the material circuit board 10P, the lower surface 41b of the top plate 41, and the inner side surface 42b of the leg portion 42.

By injecting the resin material 50p in the above manner, a void portion S is formed between the upper surface 20a of the semiconductor element 20 and the lower surface 41b of the top plate 41 of the transparent member 40 (see Fig. 2(b)).

Further, as the resin material 50p, for example, an epoxy resin or a silicone resin can be used. A filler such as glass fiber may be dispersed in the resin.

After the injection of the resin material 50p is completed, the resin material 50p is hardened by heat or ultraviolet rays.

Next, as shown in FIG. 9, the material circuit board 10P is cut in the left-right direction and the front-back direction at the position of the cutting line shown by the two-dot chain line. The cutting line indicated by the two-dot chain line in Fig. 9 overlaps with the boundary line of each semiconductor device forming region 1r. By this cutting, the outer peripheral side surface of the sealing member 50 and the four side surfaces of the circuit board 10 are respectively formed in the same surface. Through the above steps, a plurality of semiconductor devices 1 shown in FIG. 1 can be formed.

According to the above embodiment, the following effects can be achieved.

(1) A transparent member covering the upper portion of the semiconductor element 20 is a transparent member 40 integrally formed with a plurality of leg portions 42 placed on the upper surface 10a of the circuit board 10. Thereby simplifying the coverage of the semiconductor The configuration of the transparent member 40 at the upper portion of the element 20 can suppress the increase in cost of the semiconductor device 1. Further, the spacers are disposed at the four corners of the upper surface 10a of the circuit board 10, and the positioning and the alignment of the transparent member 40 can be easily and efficiently performed as compared with the case where the flat member is placed on the spacer to manufacture the semiconductor device 1. The mounting of the circuit substrate 10.

(2) In the transparent member 40, the leg portion 42 is formed integrally with the top plate 41. Therefore, compared with the configuration in which the member corresponding to the portion of the top plate 41 is supported by four spacers different from the member, the alignment of the four spacers is not required, so that the number of assembly steps can be reduced and the manufacturing can be reduced. cost.

(3) When the semiconductor device 1 is manufactured, a plurality of semiconductor device forming regions 1r for forming the semiconductor device 1 and a material circuit substrate (material substrate) in which the terminals 11 are formed in each of the semiconductor device forming regions 1r are prepared. 10P. Next, the semiconductor element 20 having the electrode 22 on the upper surface 20a is disposed in each of the semiconductor device formation regions 1r of the material circuit board 10P. The electrodes 22 of the semiconductor elements 20 are connected to the terminals 11 formed on the material circuit substrate 10P by wire bonding. A plurality of transparent members 40 each having a plurality of leg portions 42 and covering the upper portion of the semiconductor element 20 are disposed apart from each other in each semiconductor device forming region 1r of the material circuit substrate 10P. A sealing member 50 is provided on the upper surface of the material circuit substrate 10P and the lower surface of the transparent member 40 opposed to the upper surface of the material circuit substrate 10P, that is, the lower surface 41b of the top plate 41. Next, the material circuit board 10P is separated from each of the semiconductor device forming regions 1r.

Thereby, the positioning of the transparent member 40 and the mounting of the material circuit substrate 10P can be performed easily and efficiently, which simplifies the process of the semiconductor device 1. Moreover, an increase in the manufacturing cost of the semiconductor device 1 can be suppressed.

(4) facing the upper surface of the material circuit substrate 10P and the material circuit substrate 10P In the step of providing the sealing member 50 between the lower surface of the transparent member 40, that is, the lower surface 41b of the top plate 41, the transparent members 40 disposed in the respective semiconductor device forming regions 1r of the material circuit substrate 10P are injected with resin material therebetween. 50p, the upper surface of the material circuit board 10P and the lower surface of the transparent member 40, that is, the lower surface 41b of the top plate 41 and the inner side surface 42b of the leg portion 42 are sealed. Thereby, the sealing of the plurality of semiconductor devices 1 by the sealing member 50 can be efficiently performed, and the process of the semiconductor device 1 can be simplified. Moreover, an increase in the manufacturing cost of the semiconductor device 1 can be suppressed.

(5) Each time the transparent member 40 is manufactured, a transparent member material sheet having an area in which a plurality of transparent members 40 can be formed is prepared. Next, a groove 32 having a width W1 of the gap amount of the leg portion 42 is formed on the transparent member material sheet. A groove 34 having a width W2 of the gap amount of the leg portion 42 and orthogonal to the groove 32 is formed in the transparent member material sheet. Next, the transparent member material sheet is cut along the extending direction of the grooves 32, 34. That is, the step of manufacturing the transparent member 40 includes the steps of: preparing a transparent member material sheet having an area capable of forming a plurality of transparent members 40; forming a foot portion on the transparent member material sheet by moving the cutting tool in one direction a step of the gap 32 of the width W1 of the gap amount of 42; by moving the cutting tool in a direction orthogonal to one direction, the groove unprocessed portion 31 of the transparent member material sheet in which the groove 32 is not formed is formed to have the leg portion 42 a step of width W2 and a groove 34 orthogonal to the groove 32; and a step of cutting the transparent member material plate along the extending direction of the grooves 32, 34.

Thereby, the transparent member 40 can be manufactured at low cost, and the manufacturing cost of the semiconductor device 1 can be suppressed. Further, since the leg portion 42 is integrally formed with the top plate 41, the strength of the transparent member 40 is improved. Therefore, the thickness of the top plate 41 can be made thin, so that the semiconductor device 1 can be miniaturized.

(Modification)

(1) In the above description, the four side faces 40c, 40d of the transparent member 40 (refer to Fig. 1 (a)) and the circuit base The four side faces 10c, 10d (see Fig. 1 (a)) of the panel 10 are formed in the same plane. That is, in the above description, the shape of the transparent member 40 is the same as the shape of the circuit board 10 in plan view. However, the invention is not limited thereto. For example, in the semiconductor device 1A shown in the perspective view of FIG. 10(a), the size of the transparent member 40 may be smaller than the size of the circuit substrate 10 in plan view. That is, the size of the transparent member 40 may be smaller than the size of the semiconductor device forming region 1r (refer to FIG. 5) in plan view.

In this case, as shown in FIG. 10(a), the upper surface of the sealing member 50 may be lower than the top plate 41 of the transparent member 40, as shown in the perspective view of the semiconductor device 1B shown in FIG. 10(b), the upper surface of the sealing member 50 may be The top plate 41 of the transparent member 40 is formed in the same plane.

Further, as shown in FIGS. 11(a) and 11(b), the upper surface of the sealing member 50 may be higher than the top plate 41 of the transparent member 40. In this case, as shown in the semiconductor device 1C shown in the perspective view of FIG. 11(a), the sealing member 50 may not cover the top plate 41 of the transparent member 40, the semiconductor device 1D shown in the perspective view of FIG. 11(b), and the sealing member 50. It is also possible to cover a portion of the upper surface of the top plate 41 of the transparent member 40, such as the periphery of the upper surface of the top plate 41. Further, in the case shown in FIG. 11(b), for example, if the functional region 21 (see FIG. 1(b)) of the semiconductor element 20 is a light receiving region or the like, it is necessary to shield the incident light to the functional region 21. The sealing member 50 is provided in a manner.

(2) In the above description, the functional region 21 of the semiconductor element 20 is exemplified as the light receiving region, but the semiconductor device 20 may be a photographic element. Further, the present invention is also applicable to a semiconductor element 20 having a function other than light such as a light-emitting element, such as an acceleration sensor or the like.

(3) In the above description, the gap portion S is configured to be sealed by the sealing member 50, but the present invention is not limited thereto. For example, if the functional region 21 such as the MEMS pressure sensor must be exposed to the external ambient atmosphere of the semiconductor device 1, the void portion S may not be sealed by the sealing member 50. Further, the function region 21 may be exposed to the half by providing an opening or the like in one portion of the transparent member 40. The external ambient atmosphere of the conductor device 1.

(4) In the above description, the semiconductor element 20 will be described with a quad type in which the electrodes 22 are arranged on the four sides. However, the present invention is also applicable to a semiconductor element 20 of a dual type in which electrodes 22 are arranged only on one side of the opposite side.

In addition, the semiconductor device of the present invention can be variously modified within the scope of the invention. In general, a transparent plate covering the upper portion of the semiconductor element and a predetermined gap between the plate and the substrate are provided. The transparent member integrally formed by the plurality of legs may be a sealing member disposed around the periphery of the semiconductor element between the upper surface of the substrate and the lower surface of the transparent member facing the substrate.

The disclosure of the prior priority is hereby incorporated by reference.

Japanese Patent Application No. 252065 of 2014 (applied on December 12, 2014)

1‧‧‧Semiconductor device

10‧‧‧Circuit board (substrate)

10c, 10d‧‧‧ side

20‧‧‧Semiconductor components

20a‧‧‧above

21‧‧‧ functional area

22‧‧‧Electrode

23‧‧‧Metal wire

40‧‧‧Transparent components

40c, 40d‧‧‧ side

41a‧‧‧above

42b‧‧‧ inside side

50‧‧‧ Sealing members

Claims (9)

A semiconductor device comprising: a substrate having a terminal disposed thereon; a semiconductor element disposed on the substrate and having an electrode electrically connected to the terminal of the substrate; and a transparent member covered by a transparent plate covering the upper portion of the semiconductor element Forming a plurality of legs integrally formed with a predetermined gap between the plate and the upper surface of the substrate; and a sealing member surrounding the semiconductor between the substrate and the underside of the transparent member opposite to the substrate Set around the component. The semiconductor device of claim 1, wherein the electrode of the semiconductor device is disposed on the semiconductor device, and the electrode of the semiconductor device and the terminal of the substrate are electrically connected by a metal wire. The semiconductor device of claim 1 or 2, wherein the foot is attached to the substrate. The semiconductor device according to any one of claims 1 to 3, wherein the semiconductor device has a rectangular shape; the substrate has a rectangular shape larger than the semiconductor element; the transparent member has a rectangular shape larger than the semiconductor element; The semiconductor element is disposed at a central portion of the substrate such that each side of the semiconductor element is located inside each side of the substrate; the leg portion is disposed at four corners of the transparent member; the sealing member is adjacent The feet are sealed. The semiconductor device according to claim 3, wherein the outer peripheral side surface of the sealing member and the four side edges of the substrate are formed in the same plane. The semiconductor device according to any one of claims 1 to 5, wherein the upper surface and the lower surface of the transparent member are planes parallel to each other. A method of manufacturing a semiconductor device, comprising: a step of preparing a plurality of semiconductor device formation regions for respectively forming a semiconductor device, and forming a material substrate of a terminal in each semiconductor device formation region; and the semiconductors on the material substrate a step of arranging a semiconductor element having an electrode thereon in a device formation region; a step of bonding the electrode of the semiconductor element to the terminal formed on the material substrate; and having a plurality of legs and covering the upper portion of the semiconductor device a transparent member disposed in each of the semiconductor device forming regions of the material substrate, and separating the transparent members disposed in each of the plurality of semiconductor device forming regions from each other; and on the material substrate and the material substrate a step of providing a sealing member between the opposite sides of the transparent member; and a step of separating the material substrate from the semiconductor device forming regions. The method of manufacturing a semiconductor device according to claim 7, wherein the step of disposing a sealing member between the upper surface of the material substrate and the lower surface of the transparent member opposite to the material substrate is disposed on the material substrate The transparent member, which is separated from each other of the plurality of semiconductor device forming regions, is injected into the sealing member, and the opening of the material substrate, the transparent member, and the side of the leg portion are sealed. The method of manufacturing a semiconductor device according to claim 7 or 8, further comprising the step of manufacturing the transparent member; the step of manufacturing the transparent member comprises: preparing a transparent member material having an area capable of forming a plurality of transparent members a step of forming a first groove having a width of the gap of the leg portion by moving the cutting tool in one direction; wherein the cutting tool is orthogonal to the one direction Moving in the direction of the unprocessed portion of the transparent member material sheet on which the first groove is not formed, forming a second groove having a width of the leg portion and orthogonal to the first groove; and The step of cutting the transparent member material sheet along the extending direction of the groove.