JP2016115768A - Semiconductor device and manufacturing method of the same - Google Patents

Semiconductor device and manufacturing method of the same Download PDF

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JP2016115768A
JP2016115768A JP2014252063A JP2014252063A JP2016115768A JP 2016115768 A JP2016115768 A JP 2016115768A JP 2014252063 A JP2014252063 A JP 2014252063A JP 2014252063 A JP2014252063 A JP 2014252063A JP 2016115768 A JP2016115768 A JP 2016115768A
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semiconductor device
bridge
substrate
semiconductor element
semiconductor
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伸一 眞▲崎▼
Shinichi Mazaki
伸一 眞▲崎▼
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Aoi Electronics Co Ltd
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Aoi Electronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting

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Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing breakage of a transparent member with excellent productivity.SOLUTION: A semiconductor device 1 includes: a substrate 10; a semiconductor element 20; a pair of bridge shape support bodies 30 having a plurality of legs 31 placed on one face of the substrate 10 and arranged to be mutually separated; and a transparent member 40 disposed at a side opposite to the leg 31 of the bridge shape support body 30, extending while covering a top part of the semiconductor element from one part to the other part of the pair of bridge shape support medium 30.SELECTED DRAWING: Figure 1

Description

この発明は、半導体素子が封止部材により封止された半導体デバイスおよびその製造方法に関する。   The present invention relates to a semiconductor device in which a semiconductor element is sealed with a sealing member and a method for manufacturing the same.

光学センサ等の機能領域を有する半導体デバイスにおいては、電子機器の小型化に伴い、小型化および薄型化が図られており、最近では、半導体素子を基板上に搭載し、半導体素子を枠状の蓋部材で覆い、蓋部材と半導体素子の周囲の間に絶縁性の封止樹脂を充填する構造が採用されている。   In a semiconductor device having a functional area such as an optical sensor, the electronic device has been reduced in size and thickness with the downsizing of electronic equipment. Recently, a semiconductor element is mounted on a substrate, and the semiconductor element is frame-shaped. A structure in which an insulating sealing resin is filled between the cover member and the periphery of the semiconductor element is employed.

半導体素子の大きさに応じて異なる大きさの蓋部材を作製することは、金型費用等の増大を伴う。そこで、半導体素子の４つのコーナー部のそれぞれに対応して、基板上にスペーサを１ずつ、すなわち４つのスペーサを配置し、４つのスペーサの上面に延在される透明板を配置して、半導体素子を覆った構造としたものがある（例えば、特許文献１参照）。   Producing lid members of different sizes depending on the size of the semiconductor element is accompanied by an increase in mold costs and the like. Therefore, in correspondence with each of the four corner portions of the semiconductor element, one spacer is arranged on the substrate, that is, four spacers are arranged, and a transparent plate extending on the upper surface of the four spacers is arranged, and the semiconductor is arranged. There is a structure in which an element is covered (see, for example, Patent Document 1).

米国特許第７，４１７，２９４号明細書US Pat. No. 7,417,294

特許文献１に記載された発明では、基板上に４つのスペーサを位置決めして固定する工程の作業性が悪く、生産性に劣る。また、透明板の支持部が点状となり、面で受けることができないので、透明板を薄くした場合、透明板が破損する恐れがある。   In the invention described in Patent Document 1, the workability of the process of positioning and fixing the four spacers on the substrate is poor and the productivity is poor. Moreover, since the support part of a transparent plate becomes dotted and cannot receive on a surface, when a transparent plate is made thin, there exists a possibility that a transparent plate may be damaged.

この発明の半導体デバイスは、一面上に端子が設けられた基板と、基板の一面上に配置され、基板の端子に電気的に接続された電極を有する半導体素子と、基板の一面上に載置される複数の脚部を有し、相互に離間して配置された一対の橋状支持体と、橋状支持体の脚部とは反対面側に配置され、一対の橋状支持体の一方から半導体素子の上部を覆って橋状支持体の他方にまで延在された透明部材と、を備える。
この発明の半導体デバイスの製造方法は、半導体デバイスがそれぞれ形成される複数の半導体デバイス形成領域を有し、各半導体デバイス形成領域内に端子が形成された素材基板を準備し、素材基板の各半導体デバイス形成領域内に、上面に電極を有する半導体素子を配置し、半導体素子それぞれの電極と素材基板に形成された端子をワイヤボンディングし、素材基板の各半導体デバイス形成領域内に、それぞれ複数の脚部を有する一対の橋状支持体を、相互に離間して設け、脚部と反対側の面に、一方の橋状支持体から半導体素子の上部を覆って他方の橋状支持体まで透明部材を延在し、素材基板を半導体デバイス形成領域毎に分離する方法である。 A semiconductor device according to the present invention includes a substrate provided with terminals on one surface, a semiconductor element having electrodes disposed on one surface of the substrate and electrically connected to the terminals of the substrate, and mounted on one surface of the substrate. A pair of bridge-shaped supports having a plurality of legs that are spaced apart from each other, and one of the pair of bridge-shaped supports disposed on the opposite side of the legs of the bridge-shaped support And a transparent member that covers the upper part of the semiconductor element and extends to the other of the bridge-like support.
The method of manufacturing a semiconductor device according to the present invention provides a material substrate having a plurality of semiconductor device formation regions each having a semiconductor device formed therein, and a terminal formed in each semiconductor device formation region. A semiconductor element having an electrode on the upper surface is disposed in the device formation region, the electrodes of the semiconductor element and terminals formed on the material substrate are wire-bonded, and a plurality of legs are provided in each semiconductor device formation region of the material substrate. A pair of bridge-shaped supports having a portion are provided so as to be spaced apart from each other, and a transparent member is provided on a surface opposite to the leg portion from one bridge-shaped support to the upper portion of the semiconductor element to the other bridge-shaped support. In which the material substrate is separated for each semiconductor device formation region.

この発明によれば、基板上には一対の橋状支持体を配置すればよいので、生産性が向上する。また、透明部材を橋状支持体の上面で支持するので、透明部材を支持する支持面が大きくなり、透明部材の破損を抑制することができる。   According to the present invention, since a pair of bridge-shaped supports may be disposed on the substrate, productivity is improved. Moreover, since a transparent member is supported on the upper surface of a bridge-shaped support body, the support surface which supports a transparent member becomes large, and the damage of a transparent member can be suppressed.

本発明に係る半導体デバイスの一実施の形態の外観斜視図。1 is an external perspective view of an embodiment of a semiconductor device according to the present invention. （ａ）は、図１に図示された半導体デバイスの上方からの平面図、（ｂ）は（ａ）のＩＩｂ−ＩＩｂ線断面図。2A is a plan view from above of the semiconductor device shown in FIG. 1, and FIG. 2B is a sectional view taken along line IIb-IIb in FIG. 図１に図示された半導体デバイスの構成部材である橋状支持体の外観斜視図。FIG. 2 is an external perspective view of a bridge-like support that is a component of the semiconductor device illustrated in FIG. 1. （ａ）、（ｂ）は、図３に図示された橋状支持体の製造方法を説明するための斜視図。(A), (b) is a perspective view for demonstrating the manufacturing method of the bridge-shaped support body illustrated in FIG. 図１に図示された半導体デバイスの製造方法を説明するための上方からの平面図であり、基板上に半導体素子を載置する工程を示す。It is a top view from the upper side for demonstrating the manufacturing method of the semiconductor device illustrated by FIG. 1, and shows the process of mounting a semiconductor element on a board | substrate. 図５に続く工程を示す図。The figure which shows the process of following FIG. 図６に続く工程を示す図。The figure which shows the process of following FIG. 図７に続く工程を示す図。The figure which shows the process of following FIG. 図８に続く工程を示す図。The figure which shows the process of following FIG. 図９に続く工程を示す図。The figure which shows the process following FIG. 本発明の半導体デバイスの実施形態２の外観斜視図。The external appearance perspective view of Embodiment 2 of the semiconductor device of this invention. 本発明の半導体デバイスの実施形態３を示し、（ａ）は、半導体デバイスの上方からの平面図、（ｂ）は（ａ）のＸＩＩｂ−ＸＩＩｂ線断面図。Embodiment 3 of the semiconductor device of this invention is shown, (a) is a top view from the upper side of a semiconductor device, (b) is the XIIb-XIIb sectional view taken on the line of (a). 図１２に図示された半導体デバイスの製造方法の一例を説明するための平面図。FIG. 13 is a plan view for explaining an example of a manufacturing method of the semiconductor device illustrated in FIG. 12. 図１２図示された半導体デバイスの他の製造方法を説明するための平面図。FIG. 12 is a plan view for explaining another method for manufacturing the semiconductor device shown in FIG. 12;

−実施形態１−
［半導体デバイスの構造］
以下、この発明の半導体デバイスの一実施の形態を図面と共に説明する。
図１は、この発明の半導体デバイスの一実施の形態を示す外観斜視図であり、図２（ａ）は、図１に図示された半導体デバイスの上方からの平面図であり、図２（ｂ）は図２（ａ）のＩＩｂ−ＩＩｂ線断面図である。また、図３は、図１に図示された半導体デバイスの構成部材である橋状支持体の外観斜視図である。
半導体デバイス１は、回路基板（基板）１０と、半導体素子２０と、一対の橋状支持体３０と、透明部材４０と、封止部材５０とを備えている。
半導体素子２０は上面２０ａに、例えば、受光領域などの機能領域２１を有し、回路基板１０の上面（一面）１０ａ上に不図示のダイボンド材によりダイボンディングされている。半導体素子２０の機能領域２１の周囲には、複数の電極２２が配列されている。回路基板１０の上面１０ａには、半導体素子２０の周囲に配列された端子１１（図２（ｂ）参照）が形成されている。半導体素子２０の各電極２２は、回路基板１０の端子１１にワイヤ２３により電気的に接続されている。電極２２と端子１１との接続は、金、銀、銅またはそれらの合金等のワイヤを用いたワイヤボンディング法によるものである。回路基板１０の上面１０ａに対向する下面１０ｂ（図２（ｂ）参照）には、不図示のビアホールを介して、それぞれ、対応する端子１１に接続された外部端子部１２が形成されている。 Embodiment 1
[Structure of semiconductor device]
Hereinafter, an embodiment of a semiconductor device of the present invention will be described with reference to the drawings.
FIG. 1 is an external perspective view showing an embodiment of a semiconductor device according to the present invention, and FIG. 2A is a plan view from above of the semiconductor device shown in FIG. ) Is a cross-sectional view taken along line IIb-IIb in FIG. FIG. 3 is an external perspective view of a bridge-like support that is a component of the semiconductor device shown in FIG.
The semiconductor device 1 includes a circuit board (substrate) 10, a semiconductor element 20, a pair of bridge-shaped supports 30, a transparent member 40, and a sealing member 50.
The semiconductor element 20 has a functional region 21 such as a light receiving region on the upper surface 20a, and is die-bonded on the upper surface (one surface) 10a of the circuit board 10 by a die bonding material (not shown). A plurality of electrodes 22 are arranged around the functional region 21 of the semiconductor element 20. Terminals 11 (see FIG. 2B) arranged around the semiconductor element 20 are formed on the upper surface 10 a of the circuit board 10. Each electrode 22 of the semiconductor element 20 is electrically connected to the terminal 11 of the circuit board 10 by a wire 23. The connection between the electrode 22 and the terminal 11 is based on a wire bonding method using a wire such as gold, silver, copper, or an alloy thereof. On the lower surface 10b (see FIG. 2B) facing the upper surface 10a of the circuit board 10, external terminal portions 12 connected to the corresponding terminals 11 are formed through via holes (not shown).

半導体素子２０は平面視で矩形形状を有しており、回路基板１０は、平面視で、半導体素子２０より一回り大きい矩形形状を有している。半導体素子２０は、回路基板１０のほぼ中央に配置されており、半導体素子２０の相対向する側辺は、それぞれ、回路基板1０の対応する側辺から等しい長さだけ内側に配置されている。   The semiconductor element 20 has a rectangular shape in plan view, and the circuit board 10 has a rectangular shape that is slightly larger than the semiconductor element 20 in plan view. The semiconductor element 20 is disposed substantially at the center of the circuit board 10, and the opposite sides of the semiconductor element 20 are respectively disposed on the inner side by an equal length from the corresponding side of the circuit board 10.

［橋状支持体の構造］
回路基板１０の左右方向に延在された長辺１０ｃと平行に一対の橋状支持体３０が配置されている。図３に図示されるように、各橋状支持体３０は、回路基板１０の長辺１０ｃと平行な方向に延在された部材であり、左右方向に延在された一対の側面３０ａを有する。橋状支持体３０の左右両端には、それぞれ、下方に延出する脚部３１が形成されている。図３では、脚部３１は、ほぼ角柱形状とされている。しかし、円柱形状あるいは円錐台、角錐台等の形状としてもよい。
なお、以下において、左右方向、前後方向および上下方向を図示の通りとする。 [Bridge-like support structure]
A pair of bridge-shaped supports 30 is arranged in parallel with the long side 10c extending in the left-right direction of the circuit board 10. As shown in FIG. 3, each bridge-like support 30 is a member extending in a direction parallel to the long side 10 c of the circuit board 10, and has a pair of side surfaces 30 a extending in the left-right direction. . Leg portions 31 extending downward are formed at the left and right ends of the bridge-shaped support body 30, respectively. In FIG. 3, the leg portion 31 has a substantially prismatic shape. However, it may have a cylindrical shape, a truncated cone shape, a truncated pyramid shape, or the like.
In the following, the left-right direction, the front-rear direction, and the up-down direction are as illustrated.

橋状支持体３０の脚部３１間は、凹部３２とされている。つまり、各脚部３１の下面３１ａの間は、溝状に除去されて凹部３２が形成されており、一対の各側面３０ａは、ほぼコ字形状を有する。橋状支持体３０の上面３０ｂは全長に亘り平坦に形成されている。   The space between the leg portions 31 of the bridge-shaped support body 30 is a recess 32. That is, between the lower surfaces 31a of the leg portions 31, the recesses 32 are formed by being removed in a groove shape, and the pair of side surfaces 30a have a substantially U-shape. The upper surface 30b of the bridge-shaped support body 30 is formed flat over the entire length.

各脚部３１の下面３１ａ（図３参照）が不図示の接着剤により回路基板１０の上面１０ａに接着されている。脚部３１の下面３１ａから上面３０ｂまでの高さ（上下方向の長さ）ｔは、端子１１と電極２２を接続するワイヤ２３の高さ（図２（ｂ）参照）より大きく形成されている。すなわち、橋状支持体３０の上面３０ｂは、ワイヤ２３が、半導体素子２０の上面２０ａから突出する最大の高さの部分２３ａの上方に位置している。   The lower surface 31a (see FIG. 3) of each leg 31 is bonded to the upper surface 10a of the circuit board 10 with an adhesive (not shown). The height (length in the vertical direction) t from the lower surface 31a to the upper surface 30b of the leg 31 is formed to be greater than the height of the wire 23 connecting the terminal 11 and the electrode 22 (see FIG. 2B). . In other words, the upper surface 30 b of the bridge-shaped support body 30 is located above the maximum height portion 23 a where the wire 23 protrudes from the upper surface 20 a of the semiconductor element 20.

橋状支持体３０は、それぞれ、その前後方向における外側の側面３０ａを回路基板１０の長辺１０ｃと面一にして回路基板１０の長辺１０ｃと、半導体素子２０の長辺２０ｂとの間に配置されている。回路基板１０の長辺１０ｃの左右方向の長さと橋状支持体３０の左右方向の長さとは等しく、各橋状支持体３０の両側の端面３０ｃは、それぞれ、回路基板１０の短辺１０ｄと面一となっている。橋状支持体３０の幅（前後方向の長さ）ｗは、回路基板１０の長辺１０ｃと半導体素子２０の長辺２０ｂとの間隔より小さく、各橋状支持体３０の内側の側面３０ａと半導体素子２０の長辺２０ｂとの間には、隙間が形成されている。   Each of the bridge-shaped supports 30 has an outer side surface 30a in the front-rear direction, which is flush with the long side 10c of the circuit board 10, and between the long side 10c of the circuit board 10 and the long side 20b of the semiconductor element 20. Has been placed. The length in the left-right direction of the long side 10c of the circuit board 10 is equal to the length in the left-right direction of the bridge-shaped support body 30, and the end faces 30c on both sides of each bridge-shaped support body 30 are respectively connected to the short side 10d of the circuit board 10 and It is the same. The width (length in the front-rear direction) w of the bridge-shaped support body 30 is smaller than the distance between the long side 10 c of the circuit board 10 and the long side 20 b of the semiconductor element 20, and the side surface 30 a inside each bridge-shaped support body 30. A gap is formed between the long side 20 b of the semiconductor element 20.

透明部材４０は、一対の橋状支持体３０の上面３０ｂ上に接着されて固定されている。
透明部材４０は、一対の長辺４０ａと一対の短辺４０ｂを有する、平面視で矩形形状の薄板部材である。透明部材４０の短辺４０ｂの長さは、各橋状支持体３０の外側の側面３０ａ間の長さより小さく、一対の橋状支持体３０の内側の側面３０ａ間の長さより大きい。換言すれば、透明部材４０の短辺４０ｂの長さは、透明部材４０の各長辺４０ａが、橋状支持体３０の幅ｗの領域内に位置するような長さとされている。つまり、透明部材４０は、一対の橋状支持体３０に跨って延在される。透明部材４０の左右方向の長さは、両側の短辺４０ｂが、それぞれ、回路基板１０の短辺１０ｄの内側と半導体素子２０の短辺２０ｃの外側の領域内に位置するような長さに形成されている。つまり、透明部材４０の左右方向の長さは、回路基板１０の左右方向の長さより短く、半導体素子２０の左右方向の長さより大きく形成されている。 The transparent member 40 is bonded and fixed on the upper surface 30 b of the pair of bridge-shaped supports 30.
The transparent member 40 is a thin plate member that has a pair of long sides 40a and a pair of short sides 40b and has a rectangular shape in plan view. The length of the short side 40 b of the transparent member 40 is smaller than the length between the outer side surfaces 30 a of each bridge-shaped support body 30 and larger than the length between the inner side surfaces 30 a of the pair of bridge-shaped support bodies 30. In other words, the length of the short side 40 b of the transparent member 40 is set such that each long side 40 a of the transparent member 40 is located in the region of the width w of the bridge-shaped support 30. That is, the transparent member 40 extends across the pair of bridge-shaped supports 30. The length of the transparent member 40 in the left-right direction is such that the short sides 40b on both sides are located in regions inside the short side 10d of the circuit board 10 and outside the short side 20c of the semiconductor element 20, respectively. Is formed. That is, the length of the transparent member 40 in the left-right direction is shorter than the length of the circuit board 10 in the left-right direction, and larger than the length of the semiconductor element 20 in the left-right direction.

このように、透明部材４０は、一対の橋状支持体３０の一方の上面３０ｂから他方の上面３０ｂに延在して載置され、かつ、離間して配置された一対の橋状支持体３０における、左右方向および前後方向のほぼ中央に配置されて、半導体素子２０全体を覆っている。   As described above, the transparent member 40 is placed so as to extend from the one upper surface 30b of the pair of bridge-shaped supports 30 to the other upper surface 30b, and is disposed apart from each other. Are arranged at substantially the center in the left-right direction and the front-rear direction, covering the entire semiconductor element 20.

透明部材４０は、透明なガラスまたはアクリル樹脂等の透明な樹脂により形成される。
橋状支持体３０も、透明部材４０と同様な透明な部材により形成することができる。しかし、橋状支持体３０は、セラミックスや有色の樹脂部材により形成してもよい。 The transparent member 40 is formed of transparent resin such as transparent glass or acrylic resin.
The bridge-shaped support body 30 can also be formed of a transparent member similar to the transparent member 40. However, the bridge-like support 30 may be formed of ceramics or a colored resin member.

封止部材５０は、回路基板１０の上面１０ａ上に、半導体素子２０の外周を囲み、半導体素子２０の一対の長辺２０ｂおよび一対の短辺２０ｃのそれぞれに、接触するように形成されている。半導体素子２０の各長辺２０ｂに接触する封止部材５０の部分は、橋状支持体３０の凹部３２から注入されて固化されたものである。半導体素子２０の各短辺２０ｃに接触する封止部材５０の部分は、回路基板１０と透明部材４０の隙間から注入されて固化されたものである。封止部材５０の形成方法ついては、後述する。
封止部材５０の外形は回路基板の外形と同一であり、封止部材５０の外周の側辺は、回路基板１０の一対の長辺１０ｃおよび一対の短辺１０ｄと面一になっている。
なお、図２（ｂ）において、凹部３２内に注入された封止部材５０の上面と橋状支持体３０の凹部３２の底面（図では上方の面）との間に隙間は形成されていないが、図２（ｂ）では、凹部３２を明示するために分離して示されている。 The sealing member 50 is formed on the upper surface 10a of the circuit board 10 so as to surround the outer periphery of the semiconductor element 20 and to be in contact with each of the pair of long sides 20b and the pair of short sides 20c. . The portion of the sealing member 50 that contacts each long side 20b of the semiconductor element 20 is injected from the recess 32 of the bridge-shaped support 30 and solidified. The portion of the sealing member 50 that contacts each short side 20 c of the semiconductor element 20 is injected from the gap between the circuit board 10 and the transparent member 40 and solidified. A method for forming the sealing member 50 will be described later.
The outer shape of the sealing member 50 is the same as the outer shape of the circuit board, and the outer peripheral sides of the sealing member 50 are flush with the pair of long sides 10 c and the pair of short sides 10 d of the circuit board 10.
In FIG. 2B, no gap is formed between the upper surface of the sealing member 50 injected into the recess 32 and the bottom surface (upper surface in the figure) of the recess 32 of the bridge-shaped support 30. However, in FIG. 2 (b), it is shown separately to clearly show the recess 32.

図２（ｂ）に図示されるように、封止部材５０は、半導体素子２０の上面２０ａとほぼ同じ厚さか、それよりも薄く形成されている。封止部材５０は、回路基板１０の端子１１およびワイヤ２３における端子１１との接合部を覆っている。図２（ｂ）に図示された一実施の形態では、封止部材５０は、半導体素子２０の上面２０ａに形成された電極２２およびワイヤ２３における電極２２との接合部を覆っていない。しかし、封止部材５０は、半導体素子２０の機能領域２１を覆わなければ、ワイヤ２３における電極２２との接合部および電極２２を覆うように構成してもよい。図２（ｂ）に図示されるように、半導体素子２０の上面２０ａと透明部材４０の内面４０ｃとの間には空隙部Ｓが形成されている。   As illustrated in FIG. 2B, the sealing member 50 is formed to have a thickness that is substantially the same as or thinner than the upper surface 20 a of the semiconductor element 20. The sealing member 50 covers the joint portion between the terminal 11 of the circuit board 10 and the terminal 11 in the wire 23. In one embodiment illustrated in FIG. 2B, the sealing member 50 does not cover the electrode 22 formed on the upper surface 20 a of the semiconductor element 20 and the bonding portion between the wire 23 and the electrode 22. However, the sealing member 50 may be configured to cover the bonding portion of the wire 23 with the electrode 22 and the electrode 22 as long as the functional region 21 of the semiconductor element 20 is not covered. As illustrated in FIG. 2B, a gap S is formed between the upper surface 20 a of the semiconductor element 20 and the inner surface 40 c of the transparent member 40.

［橋状支持体の製造方法］
図４（ａ）、（ｂ）を参照して、図３に図示された橋状支持体の製造方法を説明する。
複数の橋状支持体形成領域３０ｒ（図４（ｂ）参照）の面積を有する平板である支持体素材板（図示せず）を準備する。各橋状支持体形成領域３０ｒは、平面視で橋状支持体３０と同一の大きさおよび形状を有し、高さｔは、図３に図示される橋状支持体３０の高さｔ（上下方向の長さ）と同一である。 [Method for producing bridge-shaped support]
With reference to FIG. 4 (a), (b), the manufacturing method of the bridge-shaped support body illustrated in FIG. 3 is demonstrated.
A support material plate (not shown) that is a flat plate having an area of a plurality of bridge-like support formation regions 30r (see FIG. 4B) is prepared. Each bridge-like support forming region 30r has the same size and shape as the bridge-like support 30 in a plan view, and the height t is the height t of the bridge-like support 30 shown in FIG. The length in the vertical direction).

支持体素材板を加工して、前後方向に延在された複数の溝３２ｒが設けられた支持体中間集合板３０Ｐを形成する。支持体中間集合板３０Ｐの溝３２ｒの長さｌは、橋状支持体３０の凹部３２の脚部間（左右方向の長さ）ｌ（図３参照）、換言すれば、脚部３１の間隙と同じである。支持体中間集合板３０Ｐの溝３２ｒの深さｇは、橋状支持体３０の凹部３２の深さｇ（図３参照）と同じである。各溝３２ｒは、橋状支持体３０の脚部３１の幅（左右方向の長さ）ｄの２倍（２ｄ）離間して平行に形成する。つまり、各溝３２ｒは、隣接する溝３２ｒ間に長さ２ｄの溝未加工部３１ｒが形成されるよう加工される。支持体中間集合板３０Ｐの左右方向の両側部において、溝３２ｒは、側面３７から溝３２ｒの端部までの長さｄが、橋状支持体３０の脚部３１の長さｄ（図３参照）と同一となる位置に設けられる。溝３２ｒを形成する際は、支持体中間集合板３０Ｐの各側面３７から溝３２ｒの端部までの長さをｄより大きくしておき、溝３２ｒを形成後に、長さｄとなるように、支持体中間集合板３０Ｐの各側面３７を切削してもよい。   The support material plate is processed to form a support intermediate assembly plate 30P provided with a plurality of grooves 32r extending in the front-rear direction. The length l of the groove 32r of the support intermediate assembly plate 30P is defined between the legs of the recess 32 of the bridge-shaped support 30 (length in the left-right direction) 1 (see FIG. 3), in other words, the gap between the legs 31. Is the same. The depth g of the groove 32r of the support intermediate assembly plate 30P is the same as the depth g of the recess 32 of the bridge-shaped support 30 (see FIG. 3). Each groove 32r is formed in parallel with a separation (twice (2d)) of the width (length in the left-right direction) d of the leg portion 31 of the bridge-shaped support body 30. That is, each groove 32r is processed so that a groove unprocessed portion 31r having a length of 2d is formed between adjacent grooves 32r. On both sides in the left-right direction of the support intermediate assembly plate 30P, the length d of the groove 32r from the side surface 37 to the end of the groove 32r is the length d of the leg portion 31 of the bridge-like support 30 (see FIG. 3). ) At the same position. When forming the groove 32r, the length from each side surface 37 of the support intermediate assembly plate 30P to the end of the groove 32r is made larger than d, and after forming the groove 32r, the length d becomes Each side surface 37 of the support intermediate assembly plate 30P may be cut.

図４（ａ）に図示された支持体中間集合板３０Ｐを形成した後、間隔ｗの切断線ｃ1−ｃ1で、前後方向に平行に、支持体中間集合板３０Ｐを切断する。切断線ｃ1−ｃ1の間隔ｗは、橋状支持体３０の前後方向の幅ｗと同一である。また、支持体中間集合板３０Ｐの溝未加工部３１ｒの左右方向の中心位置で、切断線ｃ１−ｃ１に直交する切断線ｃ２−ｃ２で支持体中間集合板３０Ｐを切断する。切断の順序は、切断線ｃ１−ｃ１での切断が先であっても、切断線ｃ２−ｃ２での切断が先であってもよい。これにより、図３に図示された複数の橋状支持体３０を効率的に作製することができる。 After the support intermediate assembly plate 30P illustrated in FIG. 4A is formed, the support intermediate assembly plate 30P is cut in parallel with the front-rear direction at a cutting line c 1 -c 1 with a spacing w. The interval w between the cutting lines c 1 -c 1 is the same as the width w in the front-rear direction of the bridge-shaped support body 30. Further, the support intermediate assembly plate 30P is cut along a cutting line c 2 -c 2 perpendicular to the cutting line c 1 -c 1 at the center position in the left-right direction of the unmachined portion 31r of the support intermediate assembly plate 30P. The cutting order may be the cutting at the cutting line c 1 -c 1 or the cutting at the cutting line c 2 -c 2 . As a result, the plurality of bridge-shaped supports 30 illustrated in FIG. 3 can be efficiently manufactured.

上記では、支持体素材板に溝３２ｒを２つ形成する場合で例示したが、さらに、支持体素材板に形成する溝３２ｒの数を増やしてもよい。溝３２ｒを増やす場合には、隣接する溝３２ｒ間に左右方向の長さ２ｄの溝未加工部３１ｒが形成されるようにする。
また、支持体素材板に形成する溝３２ｒを１つだけとし、切断線ｃ１−ｃ１だけの切断により、橋状支持体３０を得るようにしてもよい。
上記橋状支持体３０の製造方法は、橋状支持体３０を、ガラス、セラミックス等により形成する場合に適する。橋状支持体３０を樹脂により形成する場合には、図４（ａ）に図示される溝３２ｒが形成された支持体中間集合板３０Ｐをモールド法により形成してもよい。 In the above, the case where two grooves 32r are formed on the support material plate is illustrated, but the number of grooves 32r formed on the support material plate may be further increased. When the number of grooves 32r is increased, a non-grooved portion 31r having a length 2d in the left-right direction is formed between adjacent grooves 32r.
Alternatively, only one groove 32r may be formed on the support material plate, and the bridge-shaped support 30 may be obtained by cutting only the cutting line c 1 -c 1 .
The manufacturing method of the bridge-shaped support 30 is suitable when the bridge-shaped support 30 is formed of glass, ceramics, or the like. When the bridge-shaped support 30 is formed of resin, the support intermediate assembly plate 30P in which the grooves 32r illustrated in FIG. 4A are formed may be formed by a molding method.

［半導体デバイスの製造方法］
図５〜１０を参照して、半導体デバイスの製造方法を説明する。
複数の半導体デバイス形成領域１ｒの面積を有する素材回路基板（素材基板）１０Ｐを準備する。素材回路基板１０Ｐの各半導体デバイス形成領域１ｒ内には、端子１１および端子１１にビアホールを介して接続された外部端子部１２（図２（ｂ）参照）が形成されている。
なお、以下では、素材回路基板１０Ｐ上に、左右方向４×前後方向３個の半導体デバイス１を形成する場合として例示するが、素材回路基板１０Ｐ上には、これ以上またはこれ以下の数の半導体デバイス１を形成することが可能である。各半導体デバイス形成領域１ｒの平面形状は、半導体デバイス１を平面視した大きさおよび形状と同一である。すなわち、各半導体デバイス形成領域１ｒは、左右方向に延在する２つの長辺と、前後方向に延在する２つの短辺で囲まれた矩形の形状を有する。 [Method for Manufacturing Semiconductor Device]
A method for manufacturing a semiconductor device will be described with reference to FIGS.
A material circuit board (material substrate) 10P having an area of a plurality of semiconductor device forming regions 1r is prepared. In each semiconductor device formation region 1r of the material circuit board 10P, the terminal 11 and the external terminal portion 12 (see FIG. 2B) connected to the terminal 11 via a via hole are formed.
In the following, a case where four semiconductor devices 1 in the left and right direction × 3 in the front and rear direction are formed on the material circuit board 10P will be described as an example, but more or less semiconductors are formed on the material circuit board 10P. The device 1 can be formed. The planar shape of each semiconductor device formation region 1r is the same as the size and shape of the semiconductor device 1 in plan view. That is, each semiconductor device formation region 1r has a rectangular shape surrounded by two long sides extending in the left-right direction and two short sides extending in the front-rear direction.

図５に図示されるように、各半導体デバイス形成領域１ｒに、半導体素子２０をダイボンディングして素材回路基板（素材基板）１０Ｐに半導体素子２０を固定する。そして、ワイヤボンディングにより、半導体素子２０の電極２２と素材回路基板（素材基板）１０Ｐの半導体デバイス形成領域１ｒに形成された端子１１とを接続する。   As shown in FIG. 5, the semiconductor element 20 is die-bonded to each semiconductor device forming region 1r to fix the semiconductor element 20 to the material circuit board (material substrate) 10P. Then, the electrodes 22 of the semiconductor element 20 and the terminals 11 formed in the semiconductor device formation region 1r of the material circuit board (material substrate) 10P are connected by wire bonding.

次に、図６に図示されるように、各半導体デバイス形成領域１ｒ内に、一対の橋状支持体３０を固定する。一対の橋状支持体３０は、半導体素子２０の長辺２０ｂと平行に、対向して固定される。各橋状支持体３０の外側の側面３０ａが、半導体デバイス形成領域１ｒの前後方向の境界線（長辺）上に一致するように位置決めされる。橋状支持体３０が素材回路基板１０に位置決めされて配置されると、橋状支持体３０の内側の側面３０ａと半導体素子２０の長辺２０ｂとの間に、間隙ができる。換言すれば、各橋状支持体３０は、その内側の側面３０ａが半導体素子２０の長辺２０ｂに接触しないように配置される。橋状支持体３０は、不図示の接着剤により、脚部３１の下面３１ａ（図３参照）が素材回路基板１０Ｐに接着されて固定される。   Next, as shown in FIG. 6, a pair of bridge-shaped supports 30 is fixed in each semiconductor device formation region 1r. The pair of bridge-shaped supports 30 are fixed to face each other in parallel with the long side 20 b of the semiconductor element 20. The outer side surface 30a of each bridge-shaped support body 30 is positioned so as to coincide with the boundary line (long side) in the front-rear direction of the semiconductor device forming region 1r. When the bridge-shaped support body 30 is positioned and arranged on the material circuit board 10, a gap is formed between the inner side surface 30 a of the bridge-shaped support body 30 and the long side 20 b of the semiconductor element 20. In other words, each bridge-shaped support body 30 is disposed such that the inner side surface 30 a does not contact the long side 20 b of the semiconductor element 20. The bridge-like support 30 is fixed by adhering the lower surface 31a (see FIG. 3) of the leg 31 to the material circuit board 10P with an adhesive (not shown).

次に、図７に図示されるように、各半導体デバイス形成領域１ｒ内の一対の橋状支持体３０の上面３０ｂに透明部材４０を不図示の接着剤を用いて接着する。上述した通り、透明部材４０の短辺４０ｂの長さは、各橋状支持体３０の外側の側面３０ａ間の長さより小さく、一対の橋状支持体３０の内側の側面３０ａ間の長さより大きい。従って、透明部材４０は、一対の橋状支持体３０に亘って延在される、換言すれば、両側の橋状支持体３０の上面３０ｂ上に跨って配置される。また、透明部材４０は、その外形形状が、半導体素子２０の外形形状より一回り大きく形成されており、透明部材４０は、半導体素子２０上方で半導体素子２０全体を覆って配置される。   Next, as illustrated in FIG. 7, the transparent member 40 is bonded to the upper surfaces 30 b of the pair of bridge-shaped supports 30 in each semiconductor device forming region 1 r using an adhesive (not shown). As described above, the length of the short side 40 b of the transparent member 40 is smaller than the length between the outer side surfaces 30 a of each bridge-shaped support body 30 and larger than the length between the inner side surfaces 30 a of the pair of bridge-shaped support bodies 30. . Accordingly, the transparent member 40 extends over the pair of bridge-shaped supports 30, in other words, is disposed over the upper surface 30 b of the bridge-shaped supports 30 on both sides. The transparent member 40 is formed so that its outer shape is slightly larger than the outer shape of the semiconductor element 20, and the transparent member 40 is arranged above the semiconductor element 20 so as to cover the entire semiconductor element 20.

次に、図８に図示されるように、ディスペンサを前後方向に移動しながら、左右方向に隣接する半導体デバイス形成領域１ｒ間、および左端側と右端側の半導体デバイス形成領域１ｒの一側縁側に、液状の樹脂材料５０ｐを注入する。樹脂材料５０ｐは、各半導体デバイス形成領域１ｒ内の透明部材４０の短辺４０ｂの外方から半導体デバイス形成領域１ｒの内方側に向かって素材回路基板１０Ｐ上を流動して、各半導体素子２０の短辺２０ｃに当接する。   Next, as illustrated in FIG. 8, while moving the dispenser in the front-rear direction, between the semiconductor device forming regions 1 r adjacent in the left-right direction and to one side edge side of the semiconductor device forming regions 1 r on the left end side and the right end side. A liquid resin material 50p is injected. The resin material 50p flows on the material circuit board 10P from the outer side of the short side 40b of the transparent member 40 in each semiconductor device forming region 1r toward the inner side of the semiconductor device forming region 1r. It contacts the short side 20c.

次に、図９に図示されるように、ディスペンサを左右方向に移動しながら、前後方向に隣接する半導体デバイス形成領域１ｒ間、および前端側と後端側の半導体デバイス形成領域１ｒの一側縁側に、液状の樹脂材料５０ｐを注入する。樹脂材料５０ｐは、各半導体デバイス形成領域１ｒ内の各橋状支持体３０の凹部３２（図３等参照）から素材回路基板１０Ｐ上を流動して、各半導体素子２０の長辺２０ｂに当接する。   Next, as illustrated in FIG. 9, while moving the dispenser in the left-right direction, between the semiconductor device forming regions 1 r adjacent in the front-rear direction, and one side edge side of the semiconductor device forming region 1 r on the front end side and the rear end side Then, a liquid resin material 50p is injected. The resin material 50p flows on the material circuit board 10P from the recesses 32 (see FIG. 3 and the like) of the respective bridge-like supports 30 in the respective semiconductor device formation regions 1r and comes into contact with the long sides 20b of the respective semiconductor elements 20. .

図８および図９に示す樹脂材料５０ｐの注入工程において、樹脂材料５０ｐの注入量は、樹脂材料５０ｐの上面が半導体素子２０の上面２０ａと同一面となるか、またはそれよりも低い位置となる程度にする。但し、樹脂材料５０ｐが半導体素子２０の上面２０ａを覆っても、半導体素子２０の機能領域２１を覆わなければよい。これにより、半導体素子２０の上面２０ａと透明部材４０との間に空隙部Ｓ（図２（ｂ）参照）が形成される。
なお、樹脂材料５０ｐとしては、例えば、エポキシ樹脂、シリコーン樹脂を用いることができる。樹脂中にガラス繊維などのフィラを分散してもよい。 In the step of injecting the resin material 50p shown in FIG. 8 and FIG. 9, the amount of the resin material 50p injected is such that the upper surface of the resin material 50p is flush with the upper surface 20a of the semiconductor element 20 or lower. To a degree. However, even if the resin material 50 p covers the upper surface 20 a of the semiconductor element 20, it does not have to cover the functional region 21 of the semiconductor element 20. As a result, a gap S (see FIG. 2B) is formed between the upper surface 20a of the semiconductor element 20 and the transparent member 40.
For example, an epoxy resin or a silicone resin can be used as the resin material 50p. A filler such as glass fiber may be dispersed in the resin.

樹脂材料５０ｐの注入が完了したら、樹脂材料５０ｐを熱や紫外線により硬化する。
そして、図１０に示すように、各半導体デバイス形成領域１ｒの境界線に重なる二点鎖線で示す切断線の位置で、素材回路基板１０Ｐを左右方向および前後方向に切断する。これにより、図１に図示された複数の半導体デバイス１を形成することができる。 When the injection of the resin material 50p is completed, the resin material 50p is cured by heat or ultraviolet rays.
Then, as shown in FIG. 10, the material circuit board 10P is cut in the left-right direction and the front-rear direction at the position of the cutting line indicated by the two-dot chain line that overlaps the boundary line of each semiconductor device formation region 1r. Thereby, a plurality of semiconductor devices 1 illustrated in FIG. 1 can be formed.

上記一実施の形態によれば、下記の効果を奏する。
（１）一対の橋状支持体３０を、それぞれ、回路基板１０上に配置された半導体素子２０の対向する長辺２０ｂの外側に、長辺２０ｂと平行に配置し、橋状支持体３０上に、橋状支持体３０の一方から他方に延在する透明部材４０を配置して、半導体素子２０を覆う構造とした。回路基板１０上に一対の橋状支持体３０を配置する構造であるので、４つのスペーサを配置する構造に比し、橋状支持体３０の位置決めおよび回路基板１０への取り付けを容易、かつ、能率的に行うことができる。 According to the one embodiment, the following effects are obtained.
(1) A pair of bridge-like supports 30 are arranged outside the long sides 20b facing each other of the semiconductor elements 20 arranged on the circuit board 10 in parallel with the long sides 20b. In addition, a transparent member 40 extending from one side of the bridge-shaped support body 30 to the other is disposed to cover the semiconductor element 20. Since the pair of bridge-like supports 30 is arranged on the circuit board 10, the bridge-like support 30 can be easily positioned and attached to the circuit board 10 as compared with the structure in which four spacers are arranged. Can be done efficiently.

（２）透明部材４０は、橋状支持体３０の平坦な上面３０ｂにより支持される構造である。このため、透明部材４０が、４つのスペーサで支持される構造に比し、透明部材４０を支持する支持面が大きくなり、透明部材４０への負荷に対する剛性を大きくすることができる。 (2) The transparent member 40 has a structure that is supported by the flat upper surface 30 b of the bridge-shaped support body 30. For this reason, compared with the structure in which the transparent member 40 is supported by the four spacers, the support surface for supporting the transparent member 40 is increased, and the rigidity against the load on the transparent member 40 can be increased.

（３）橋状支持体３０は、長手方向の両端部に脚部３１が形成され、脚部３１間に凹部３２が形成された構造を有する。このため、凹部３２から液状の樹脂材料５０ｐを注入することができ、透明部材４０への負荷に対する剛性を大きくしたものでありながら、封止を容易かつ能率的に行うことができる。 (3) The bridge-shaped support body 30 has a structure in which legs 31 are formed at both ends in the longitudinal direction and recesses 32 are formed between the legs 31. For this reason, the liquid resin material 50p can be injected from the recess 32, and sealing can be performed easily and efficiently while increasing the rigidity against the load on the transparent member 40.

（４）液状の樹脂材料５０ｐは、対向する二対の側辺のうち、一対の側辺に対しては、橋状支持体３０の凹部３２から注入される。樹脂材料５０ｐは、硬化時に応力が発生し易いが、一対の側辺に配置された橋状支持体３０は、樹脂材料５０ｐが硬化する際の応力を吸収する。このため、４つの側辺のいずれにも支持部材を有していない構造に比し、透明部材４０にかかる応力を低減する。また、封止部材５０の変形が発生すると透明部材４０が水平に対して傾く恐れがあるが、一実施の形態では、封止部材５０の変形を抑制するので、透明部材４０の傾きも抑制することができる。 (4) The liquid resin material 50p is injected from the concave portion 32 of the bridge-shaped support body 30 with respect to the pair of side sides of the two pairs of side sides facing each other. Although the resin material 50p is likely to generate stress at the time of curing, the bridge-shaped support body 30 disposed on the pair of side sides absorbs stress when the resin material 50p is cured. For this reason, compared with the structure which does not have a supporting member in any of four sides, the stress concerning the transparent member 40 is reduced. Further, when the deformation of the sealing member 50 occurs, the transparent member 40 may be inclined with respect to the horizontal. However, in one embodiment, the deformation of the sealing member 50 is suppressed, and thus the inclination of the transparent member 40 is also suppressed. be able to.

（５）半導体素子２０の対向する一対の長辺２０ｂに沿って、それぞれ、橋状支持体３０を離間して配置する構造であり、橋状支持体３０の離間長さは、自由に変更できる構造である。このため、短辺２０ｃの長さが異なる半導体素子２０に対応することができ、開発費や金型費を削減することができる。 (5) The structure is such that the bridge-shaped support bodies 30 are spaced apart from each other along the pair of opposing long sides 20b of the semiconductor element 20, and the separation length of the bridge-shaped support bodies 30 can be freely changed. Structure. For this reason, it can respond to the semiconductor element 20 from which the length of the short side 20c differs, and can reduce development cost and metal mold | die cost.

（６）橋状支持体３０を下記の方法で作製した。
支持体素材板を加工して、前後方向に延在された複数の溝３２ｒが設けられた支持体中間集合板３０Ｐを形成する。そして、支持体中間集合板３０Ｐを、溝３２ｒの延在方向と直交する方向に、橋状支持体３０の幅ｗの間隔で切断して橋状支持体３０を作製する。この方法は、橋状支持体３０を１つずつ作製する場合に比し、能率的である。 (6) The bridge-like support 30 was produced by the following method.
The support material plate is processed to form a support intermediate assembly plate 30P provided with a plurality of grooves 32r extending in the front-rear direction. Then, the support intermediate assembly plate 30P is cut in the direction orthogonal to the extending direction of the grooves 32r at intervals of the width w of the bridge support 30 to produce the bridge support 30. This method is more efficient than the case where the bridge-shaped supports 30 are produced one by one.

（７）橋状支持体３０を、上記（６）に示す工程に、さらに、下記の工程を付加した方法で作製した。
支持体素材板に複数の溝３２ｒを形成する。隣接する溝３２ｒは、その間に、脚部３１の幅ｄの２倍の長さの溝未加工部３１ｒを存して形成する。また、溝未加工部３１ｒを、その中心位置で溝３２ｒの延在方向と平行な方向に切断する。
この方法とすれば、一度に形成できる橋状支持体３０の数が溝３２ｒの数に応じて増加するので、さらに、橋状支持体３０の作製が能率的となる。 (7) The bridge-like support 30 was produced by a method in which the following steps were further added to the step shown in (6) above.
A plurality of grooves 32r are formed in the support material plate. The adjacent grooves 32r are formed with a groove unprocessed portion 31r having a length twice as large as the width d of the leg portion 31 therebetween. Further, the groove non-processed portion 31r is cut in a direction parallel to the extending direction of the groove 32r at the center position.
According to this method, the number of bridge-shaped supports 30 that can be formed at a time increases according to the number of grooves 32r, so that the production of the bridge-shaped supports 30 becomes more efficient.

−実施形態２−
図１１は、本発明の半導体デバイスの実施形態２の断面図である。
実施形態２として示す半導体デバイス１Ａは、一対の橋状支持体３０の間に形成された封止部材５０の厚さが、図１に図示された半導体デバイス１とは異なる。
図１１に図示されるように、半導体デバイス１Ａの前後方向の側部（長辺側の側部）に形成される封止部材５０Ａと、半導体デバイス１Ａの左右方向の側部（短辺側の側部）に形成される封止部材５０Ｂとは、厚さ（上下方向の長さ）が異なる。
長辺側の側部に形成される封止部材５０Ａは、上述したように、橋状支持体３０の凹部３２から注入して形成され、半導体素子２０の厚さと同一か、または、それよりも薄く形成されている。
一方、短辺側の側部に形成される封止部材５０Ｂは、回路基板１０と透明部材４０の上下方向の間隙の全体を充填する厚さに形成されている。 Embodiment 2
FIG. 11 is a cross-sectional view of a semiconductor device according to a second embodiment of the present invention.
In the semiconductor device 1A shown as the second embodiment, the thickness of the sealing member 50 formed between the pair of bridge-shaped supports 30 is different from that of the semiconductor device 1 illustrated in FIG.
As shown in FIG. 11, the sealing member 50A formed on the front and rear side (long side) of the semiconductor device 1A, and the left and right side (short side) of the semiconductor device 1A The thickness (length in the vertical direction) is different from the sealing member 50B formed on the side portion.
As described above, the sealing member 50A formed on the side portion on the long side is formed by injecting from the concave portion 32 of the bridge-shaped support body 30, and is equal to or greater than the thickness of the semiconductor element 20. Thinly formed.
On the other hand, the sealing member 50 </ b> B formed on the side portion on the short side is formed to have a thickness that fills the entire gap in the vertical direction between the circuit board 10 and the transparent member 40.

封止部材５０Ａ、５０Ｂのように、厚さが異なる封止部材５０Ａ、５０Ｂを形成するには、液状の樹脂材料５０ｐの粘度または回路基板１０の加熱温度を調整すればよい。
実施形態２の半導体デバイス１Ａの他の構造は、図１に示す実施形態１の半導体デバイス１と同様である。
従って、実施形態２の半導体デバイス１Ａは、実施形態１の半導体デバイス１と同様な効果を奏する In order to form the sealing members 50A and 50B having different thicknesses like the sealing members 50A and 50B, the viscosity of the liquid resin material 50p or the heating temperature of the circuit board 10 may be adjusted.
The other structure of the semiconductor device 1A of the second embodiment is the same as that of the semiconductor device 1 of the first embodiment shown in FIG.
Therefore, the semiconductor device 1A of the second embodiment has the same effects as the semiconductor device 1 of the first embodiment.

また、実施形態２として示す半導体デバイス１Ａでは、封止部材５０Ａは、橋状支持体３０の凹部３２に充填され、封止部材５０Ｂは、回路基板１０と透明部材４０との間隙に充填されている。これにより、半導体素子２０は、その周囲全体が、外部から完全に密封されている。
このため、実施形態２の半導体デバイス１Ａは、外部の湿気、大気中に混合する成分、異物または気体の流れ等の外部環境の影響を無くすことができる。 In the semiconductor device 1A shown as the second embodiment, the sealing member 50A is filled in the concave portion 32 of the bridge-shaped support body 30, and the sealing member 50B is filled in the gap between the circuit board 10 and the transparent member 40. Yes. As a result, the entire periphery of the semiconductor element 20 is completely sealed from the outside.
For this reason, the semiconductor device 1A according to the second embodiment can eliminate the influence of the external environment such as external moisture, components mixed in the atmosphere, foreign matter, or gas flow.

−実施形態３−
図１２は、本発明の半導体デバイスの実施形態３を示し、図１２（ａ）は、半導体デバイスの上方からの平面図であり、図１２（ｂ）は、図１２（ａ）のＸＩＩｂ−ＸＩＩｂ線断面図である。
実施形態３の半導体デバイス１Ｂは、橋状支持体３０が、回路基板１０の外周の内側に配置され、封止部材５０Ｃは、その外周が回路基板１０の外周と面一とされ、かつ、橋状支持体３０の全体を覆っている構造を有する。 Embodiment 3
12 shows Embodiment 3 of the semiconductor device of the present invention, FIG. 12 (a) is a plan view from above of the semiconductor device, and FIG. 12 (b) is XIIb-XIIb of FIG. 12 (a). It is line sectional drawing.
In the semiconductor device 1B of the third embodiment, the bridge-shaped support body 30 is disposed inside the outer periphery of the circuit board 10, and the sealing member 50C has the outer periphery flush with the outer periphery of the circuit board 10, and the bridge It has a structure that covers the entire support 30.

図１２（ａ）、（ｂ）に図示されるように、各橋状支持体３０は、外側の側面３０ａが回路基板１０の長辺１０ｃより内側に配置され、両側の端面３０ｃは、回路基板１０の短辺１０ｄより内側に配置されている。
また、封止部材５０Ｃの各側辺５０ｆは、回路基板１０の長辺１０ｃおよび短辺１０ｄと面一となっている。さらに、封止部材５０Ｃは、各橋状支持体３０の上面３０ｂ上にも形成され、透明部材４０の外周まで延在されている。換言すれば、封止部材５０Ｃは、各側辺５０ｆから、透明部材４０の一対の長辺４０ａおよび一対の短辺４０ｂに接触する位置まで延在され、これにより、各橋状支持体３０の全体を覆っている。 As shown in FIGS. 12A and 12B, each bridge-like support 30 has an outer side surface 30 a disposed on the inner side of the long side 10 c of the circuit board 10, and both end surfaces 30 c are formed on the circuit board. It is arranged inside 10 short sides 10d.
Further, each side 50 f of the sealing member 50 </ b> C is flush with the long side 10 c and the short side 10 d of the circuit board 10. Furthermore, the sealing member 50 </ b> C is also formed on the upper surface 30 b of each bridge-shaped support body 30 and extends to the outer periphery of the transparent member 40. In other words, the sealing member 50C extends from each side 50f to a position where it contacts the pair of long sides 40a and the pair of short sides 40b of the transparent member 40. Covers the whole.

図１３は、図１２に図示された半導体デバイス１Ｂの製造方法の一例を説明するための平面図である。
実施形態３の半導体デバイス１Ｂも、基本的には、実施形態１の半導体デバイス１と同様な方法により形成することができる。
但し、半導体デバイス形成領域１ｒの境界は、隣接する橋状支持体３０の側面３０ａの中心線Ｃｘ−Ｃｘおよび橋状支持体３０の端面３０ｃの中心線Ｃｙ−Ｃｙ上に設定される。また、封止樹脂５０Ｃの注入は、樹脂材料５０ｐを橋状支持体３０の上面３０ｂを覆う厚さで、かつ、透明部材４０の一対の長辺４０ａおよび一対の短辺４０ｂに接触するように形成する。
そして、図１３に二点鎖線で図示されるように、隣接する半導体デバイス形成領域１ｒの中心線Ｃｘ−ＣｘおよびＣｙ−Ｃｙで切断すると、実施形態３の半導体デバイス１Ｂが得られる。 FIG. 13 is a plan view for explaining an example of the manufacturing method of the semiconductor device 1B shown in FIG.
The semiconductor device 1B of the third embodiment can also be formed basically by the same method as the semiconductor device 1 of the first embodiment.
However, the boundary of the semiconductor device forming region 1 r is set on the center line C x -C x of the side surface 30 a of the adjacent bridge-shaped support body 30 and the center line C y -C y of the end surface 30 c of the bridge-shaped support body 30. The Further, the injection of the sealing resin 50C is performed so that the resin material 50p is in a thickness that covers the upper surface 30b of the bridge-shaped support body 30 and is in contact with the pair of long sides 40a and the pair of short sides 40b of the transparent member 40. Form.
Then, as illustrated by a two-dot chain line in FIG. 13, the semiconductor device 1 < / b > B of Embodiment 3 is obtained by cutting along the center lines C x -C x and C y -C y of the adjacent semiconductor device formation region 1 r. .

図１４は、半導体デバイス１Ｂの他の製造方法を説明するための平面図である。
回路基板１０の前後方向における側辺１０ｅと橋状支持体３０の外側の側面３０ａとの距離をｋとし、橋状支持体３０の幅（前後方向の長さ）をｗとする。予め、幅（前後方向の長さ）が２（ｗ＋ｋ）の橋状支持体３０ｗを作製しておく。図１４（ａ）に図示されるように、回路基板１０の前後方向における両側辺１０ｅに沿って幅ｗの橋状支持体３０を配置して固定する。隣接する半導体デバイス形成領域１ｒ間には、幅２（ｗ＋ｋ）の橋状支持体３０ｗを配置して固定する。 FIG. 14 is a plan view for explaining another method for manufacturing the semiconductor device 1B.
The distance between the side 10e in the front-rear direction of the circuit board 10 and the outer side surface 30a of the bridge-like support 30 is k, and the width (length in the front-rear direction) of the bridge-like support 30 is w. A bridge-shaped support 30w having a width (length in the front-rear direction) of 2 (w + k) is prepared in advance. As shown in FIG. 14A, a bridge-like support body 30 having a width w is disposed and fixed along both side edges 10e of the circuit board 10 in the front-rear direction. Between the adjacent semiconductor device forming regions 1r, a bridge-like support 30w having a width of 2 (w + k) is arranged and fixed.

そして、橋状支持体３０ｗの中央部を、切断の中心線を、前後方向における橋状支持体３０ｗの中心線に合わせて幅２ｋの長さ切断する。このとき、回路基板１０を切断しないようにする。これにより、図１４（ｂ）に図示されるように、各デバイス形成領域１ｒ内に、幅ｗを有する橋状支持体３０が形成される。この橋状支持体３０は、デバイス形成領域１ｒの前後方向における境界１０ｆから距離ｋだけ内側に側面３０ａが位置する。他の工程は、図１３に関して説明した工程と同様である。   And the center part of the bridge-shaped support body 30w is cut | disconnected by the length of width 2k according to the centerline of cutting | disconnection to the centerline of the bridge-shaped support body 30w in the front-back direction. At this time, the circuit board 10 is not cut. Thereby, as shown in FIG. 14B, the bridge-shaped support body 30 having the width w is formed in each device forming region 1r. The bridge-like support 30 has a side surface 30a located on the inner side by a distance k from the boundary 10f in the front-rear direction of the device formation region 1r. Other steps are the same as those described with reference to FIG.

実施形態３における他の構成は、実施形態１と同様である。
よって、実施形態３の半導体デバイス１Ｂも、実施形態１の半導体デバイス１と同様な効果を奏する。
また、実施形態３の半導体デバイス１Ｂは、実施形態２の半導体デバイス１Ａよりもさらに密封強度が大きいので、一層厳しい使用環境においても信頼性を確保することが可能である。 Other configurations in the third embodiment are the same as those in the first embodiment.
Therefore, the semiconductor device 1B of the third embodiment also has the same effect as the semiconductor device 1 of the first embodiment.
In addition, since the semiconductor device 1B of the third embodiment has higher sealing strength than the semiconductor device 1A of the second embodiment, it is possible to ensure reliability even in a more severe use environment.

なお、実施形態３において、封止部材５０Ｃを透明部材４０の外周に接触する位置まで延在されている構造として例示した。しかし、封止部材５０Ｃを透明部材４０より厚く形成し、透明部材４０の上面上に延在してもよい。封止部材５０Ｃは、半導体素子２０の機能領域２１の内側に達しない位置まで、透明部材４０の上面上に延在して形成することができる。   In the third embodiment, the sealing member 50 </ b> C is illustrated as a structure extending to a position in contact with the outer periphery of the transparent member 40. However, the sealing member 50 </ b> C may be formed thicker than the transparent member 40 and extend on the upper surface of the transparent member 40. The sealing member 50 </ b> C can be formed to extend on the upper surface of the transparent member 40 to a position that does not reach the inside of the functional region 21 of the semiconductor element 20.

また、上記各実施形態では、半導体素子２０の機能領域２１を受光領域として例示したが、本発明は、発光素子等、受光以外の他の機能を有する半導体素子２０に対しても適用することができる。   In each of the above embodiments, the functional region 21 of the semiconductor element 20 is exemplified as the light receiving region. However, the present invention can also be applied to the semiconductor element 20 having a function other than light receiving, such as a light emitting element. it can.

上記各実施形態では、半導体素子２０の周囲を囲んで設けられた封止部材５０、５０Ａ〜５０Ｃを備える構造として例示したが、封止部材５０、５０Ａ〜５０Ｃを備えていない構造としてもよい。   In each said embodiment, although illustrated as a structure provided with the sealing members 50 and 50A-50C provided surrounding the circumference | surroundings of the semiconductor element 20, it is good also as a structure which is not provided with the sealing members 50 and 50A-50C.

上記各実施形態では、半導体素子２０は、４つの側辺に電極２２が配列されたクオード型として説明した。しかし、本発明は、相対向する一対の側辺のみに電極２２が配列されたデュアル型の半導体素子２０に対しても適用することができる。 In the above embodiments, the semiconductor device 20 has been described as a click O over de type electrode 22 are arranged in four sides. However, the present invention can also be applied to the dual-type semiconductor element 20 in which the electrodes 22 are arranged only on a pair of opposite sides.

上記各実施形態では、一対の橋状支持体３０のそれぞれを、半導体素子２０の長辺２０ｂに沿って配置した構造として例示した。しかし、一対の橋状支持体３０のそれぞれを、半導体素子２０の短辺２０ｃに沿って配置するようにしてもよい。   In the above embodiments, each of the pair of bridge-shaped supports 30 is exemplified as a structure arranged along the long side 20 b of the semiconductor element 20. However, each of the pair of bridge-shaped supports 30 may be disposed along the short side 20 c of the semiconductor element 20.

上記各実施形態では、橋状支持体３０は、長手方向の両端に脚部３１が形成された構造として例示した。しかし、脚部３１は、端部より内側の位置に形成してもよい。また、橋状支持体３０に、３つ以上の脚部３１を形成するようにしてもよい。   In each of the above embodiments, the bridge-shaped support body 30 is exemplified as a structure in which the leg portions 31 are formed at both ends in the longitudinal direction. However, the leg portion 31 may be formed at a position inside the end portion. Further, three or more leg portions 31 may be formed on the bridge-shaped support body 30.

その他、本発明の半導体デバイスは、発明の趣旨の範囲内において、種々、変形して構成することが可能であり、要は、基板上に配置された半導体素子の側辺に沿って、複数の脚部を有する一対の橋状支持体が配置され、透明部材が、一対の橋状支持体の一方から半導体素子の上部を覆って橋状支持体の他方まで延在され、基板の一面上に、半導体素子の周囲を囲んで封止部材が設けられたものであればよい。   In addition, the semiconductor device of the present invention can be variously modified and configured within the scope of the gist of the invention. In short, a plurality of semiconductor devices are arranged along the side of the semiconductor element arranged on the substrate. A pair of bridge-shaped supports having legs are disposed, and a transparent member extends from one of the pair of bridge-shaped supports to the other of the bridge-shaped supports so as to cover the upper part of the semiconductor element and is on one surface of the substrate. Any semiconductor device may be used as long as the sealing member is provided around the periphery of the semiconductor element.

１、１Ａ 半導体デバイス
１ｒ 半導体デバイス形成領域
１０ 回路基板（基板）
１０ａ 上面（一面）
１０ｂ 下面
１０ｃ 長辺
１０ｄ 短辺
１０ｅ 側辺
１０ｆ 境界
１０Ｐ 素材回路基板（素材基板）
１１ 端子
１２ 外部端子部
２０ 半導体素子
２０ａ 上面（一面）
２０ｂ 長辺
２０ｃ 短辺
２１ 機能領域
２２ 電極
２３ ワイヤ
３０ 橋状支持体
３０ａ 側面
３０ｂ 上面
３０ｃ 端面
３０Ｐ 支持体中間集合板
３０ｒ 橋状支持体形成領域
３１ 脚部
３１ａ 下面
３１ｒ 溝未加工部
３２ 凹部
３２ｒ 溝
３７ 側面
４０ 透明部材
４０ａ 長辺
４０ｂ 短辺
４０ｃ 内面
５０ 封止部材
５０Ａ 封止部材
５０Ｂ 封止部材
５０ｐ 樹脂材料
Ｓ 空隙部

DESCRIPTION OF SYMBOLS 1, 1A Semiconductor device 1r Semiconductor device formation area 10 Circuit board (board | substrate)
10a Top surface (one side)
10b Lower surface 10c Long side 10d Short side 10e Side 10f Boundary 10P Material circuit board (material board)
11 Terminal 12 External terminal portion 20 Semiconductor element 20a Upper surface (one surface)
20b Long side 20c Short side 21 Functional region 22 Electrode 23 Wire 30 Bridge-like support body 30a Side surface 30b Upper surface 30c End surface 30P Support intermediate plate 30r Bridge-like support formation region 31 Leg portion 31a Lower surface 31r Groove unprocessed portion 32 Recessed portion 32r Groove 37 side surface 40 transparent member 40a long side 40b short side 40c inner surface 50 sealing member 50A sealing member 50B sealing member 50p resin material S gap

Claims (15)

一面上に端子が設けられた基板と、
前記基板の前記一面上に配置され、前記基板の前記端子に電気的に接続された電極を有する半導体素子と、
前記基板の一面上に載置される複数の脚部を有し、相互に離間して配置された一対の橋状支持体と、
前記橋状支持体の前記脚部とは反対面側に配置され、一対の前記橋状支持体の一方から前記半導体素子の上部を覆って前記橋状支持体の他方にまで延在された透明部材と、を備える半導体デバイス。 A substrate with terminals on one side;
A semiconductor element having an electrode disposed on the one surface of the substrate and electrically connected to the terminal of the substrate;
A plurality of leg portions mounted on one surface of the substrate, and a pair of bridge-like supports disposed apart from each other;
Transparent disposed on the opposite side of the leg of the bridge-shaped support and extending from one of the pair of bridge-shaped supports to the other of the bridge-shaped support covering the upper portion of the semiconductor element A semiconductor device comprising: a member; 請求項１に記載の半導体デバイスにおいて、
さらに、前記基板の前記一面上に、前記半導体素子の周囲を囲んで設けられた封止部材を備える半導体デバイス。 The semiconductor device according to claim 1,
Furthermore, a semiconductor device comprising a sealing member provided on the one surface of the substrate so as to surround the semiconductor element. 請求項１または２に記載の半導体デバイスにおいて、
前記半導体素子の前記電極は、前記基板の前記一面と対向する面と反対側の面である上面に設けられ、前記半導体素子の前記電極と前記基板の前記端子とは、ワイヤにより電気的に接続されている半導体デバイス。 The semiconductor device according to claim 1 or 2,
The electrode of the semiconductor element is provided on an upper surface which is a surface opposite to the surface facing the one surface of the substrate, and the electrode of the semiconductor element and the terminal of the substrate are electrically connected by a wire. Semiconductor devices. 請求項１乃至３のいずれか１項に記載の半導体デバイスにおいて、
前記半導体素子の前記上面と前記透明部材との間は、空隙とされている半導体デバイス。 The semiconductor device according to any one of claims 1 to 3,
A semiconductor device in which a gap is provided between the upper surface of the semiconductor element and the transparent member. 請求項１乃至４のいずれか１項に記載の半導体デバイスにおいて、
前記橋状支持体の前記脚部は、前記基板の前記一面に接着されている半導体デバイス。 The semiconductor device according to any one of claims 1 to 4,
The leg portion of the bridge-like support is a semiconductor device bonded to the one surface of the substrate. 請求項１乃至５のいずれか１項に記載の半導体デバイスにおいて、
前記半導体素子は矩形形状を有し、
前記基板は、前記半導体素子より大きい矩形形状を有し、
前記半導体素子は、前記基板の中央部に、前記半導体素子の各側辺を前記基板の各側辺の内側にして配置され、
一対の前記橋状支持体は、それぞれ、前記基板の一側辺と、前記一側辺に対向する対向側辺に沿って配置されている半導体デバイス。 The semiconductor device according to any one of claims 1 to 5,
The semiconductor element has a rectangular shape,
The substrate has a rectangular shape larger than the semiconductor element;
The semiconductor element is disposed in a central portion of the substrate with each side of the semiconductor element inside each side of the substrate.
The pair of bridge-shaped supports is a semiconductor device disposed along one side of the substrate and a side opposite to the one side. 請求項５に記載の半導体デバイスにおいて、
前記橋状支持体は、それぞれ、長手方向に延在する外側面が前記基板の一側辺または前記対向側辺の内側に配置されている半導体デバイス。 The semiconductor device according to claim 5, wherein
Each of the bridge-shaped supports is a semiconductor device in which an outer side surface extending in the longitudinal direction is disposed on one side of the substrate or on the inner side of the opposite side. 請求項５に記載の半導体デバイスにおいて、
前記橋状支持体は、それぞれ、長手方向に延在する外側面が前記基板の一側辺または前記対向側辺と面一である半導体デバイス。 The semiconductor device according to claim 5, wherein
Each of the bridge-shaped supports is a semiconductor device in which an outer side surface extending in a longitudinal direction is flush with one side of the substrate or the opposite side. 請求項６乃至８のいずれか１項に記載の半導体デバイスにおいて、
前記半導体素子は、離間して配置された一対の前記橋状支持体の内側の側辺の間に配置されている半導体デバイス。 The semiconductor device according to any one of claims 6 to 8,
The semiconductor element is a semiconductor device disposed between the inner sides of a pair of bridge-shaped supports that are spaced apart from each other. 請求項６乃至９のいずれか１項に記載の半導体デバイスにおいて、
前記封止部材の外周側面は、前記基板の４つの側辺のそれぞれに面一である半導体デバイス。 The semiconductor device according to any one of claims 6 to 9,
The outer peripheral side surface of the sealing member is a semiconductor device that is flush with each of the four side sides of the substrate. 半導体デバイスがそれぞれ形成される複数の半導体デバイス形成領域を有し、前記各半導体デバイス形成領域内に端子が形成された素材基板を準備し、
前記素材基板の前記各半導体デバイス形成領域内に、上面に電極を有する半導体素子を配置し、
前記半導体素子それぞれの前記電極と前記素材基板に形成された前記端子をワイヤボンディングし、
前記素材基板の前記各半導体デバイス形成領域内に、それぞれ複数の脚部を有する一対の橋状支持体を、相互に離間して設け、
前記脚部と反対側の面に、一方の前記橋状支持体から前記半導体素子の上部を覆って他方の前記橋状支持体まで透明部材を延在し、
前記素材基板を前記半導体デバイス形成領域毎に分離する半導体デバイスの製造方法。 Having a plurality of semiconductor device formation regions in which semiconductor devices are respectively formed, preparing a material substrate in which terminals are formed in each of the semiconductor device formation regions,
In each semiconductor device forming region of the material substrate, a semiconductor element having an electrode on the upper surface is disposed,
Wire bonding the electrodes of the semiconductor elements and the terminals formed on the material substrate,
In each of the semiconductor device formation regions of the material substrate, a pair of bridge-like supports each having a plurality of legs are provided apart from each other,
A transparent member extends from the one bridge-shaped support to the other bridge-shaped support on the surface opposite to the leg portion, covering the upper part of the semiconductor element,
A method for manufacturing a semiconductor device, wherein the material substrate is separated for each semiconductor device formation region. 請求項１１に記載の半導体デバイスの製造方法において、
さらに、前記橋状支持体それぞれの前記脚部の間、および前記橋状支持体の離間した領域に封止樹脂を設ける工程を備える半導体デバイスの製造方法。 In the manufacturing method of the semiconductor device according to claim 11,
Furthermore, the manufacturing method of a semiconductor device provided with the process of providing sealing resin between the said leg parts of each said bridge-shaped support body, and the space | interval area | region of the said bridge-shaped support body. 請求項１１または１２に記載の半導体デバイスの製造方法において、
前記橋状支持体を配置する工程は、
複数の橋状支持体形成領域の面積を有する支持体素材板を準備する工程と
前記支持体素材板に、前記脚部間の長さを有する溝を延在して形成する工程と、
前記溝部の延在方向に直交する方向で、前記支持体素材板を切断して前記橋状支持体を作製する工程を含む半導体デバイスの製造方法。 In the manufacturing method of the semiconductor device according to claim 11 or 12,
The step of arranging the bridge-shaped support includes
A step of preparing a support material plate having an area of a plurality of bridge-shaped support formation regions; a step of forming a groove having a length between the legs in the support material plate; and
The manufacturing method of a semiconductor device including the process of cut | disconnecting the said support body raw material board in the direction orthogonal to the extension direction of the said groove part, and producing the said bridge | bridging support body. 請求項１３に記載の半導体デバイスの製造方法において、
前記支持体素材板に前記溝を延在して形成する工程は、前記溝間に、前記脚部の幅の２倍の長さの溝未加工部を存して複数の前記溝を形成する工程であり、
前記橋状支持体を形成する工程は、さらに、
前記溝未加工部を、前記溝未加工部の延在方向に直交する方向の中央位置で、前記溝未加工部の延在方向に沿って切断する工程を含む半導体デバイスの製造方法。 The method of manufacturing a semiconductor device according to claim 13,
In the step of extending the grooves in the support material plate, a plurality of grooves are formed between the grooves with a groove unprocessed portion having a length twice the width of the leg portion. Process,
The step of forming the bridge-like support further comprises:
A method for manufacturing a semiconductor device, comprising: cutting the groove unprocessed portion along a direction in which the groove unprocessed portion extends at a central position in a direction orthogonal to the direction in which the groove unprocessed portion extends. 請求項１１または１２に記載の半導体デバイスの製造方法において、
前記素材基板の前記各半導体デバイス形成領域内に、それぞれ複数の脚部を有する一対の橋状支持体を、相互に離間して設ける工程は、
前記一対の橋状支持体の少なくとも一方を、所定幅よりも幅広の橋状支持体を前記半導体デバイス形成領域内に配置した後、切断により所定幅に形成する工程を含む半導体デバイスの製造方法。

In the manufacturing method of the semiconductor device according to claim 11 or 12,
A step of providing a pair of bridge-shaped supports each having a plurality of legs in the respective semiconductor device formation regions of the material substrate, being separated from each other,
A method for manufacturing a semiconductor device, comprising: forming at least one of the pair of bridge-shaped supports in a predetermined width by cutting a bridge-shaped support wider than a predetermined width in the semiconductor device formation region.

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