TW201633414A - 用於在半導體晶圓上形成柱狀凸塊的方法 - Google Patents

用於在半導體晶圓上形成柱狀凸塊的方法 Download PDF

Info

Publication number
TW201633414A
TW201633414A TW104123915A TW104123915A TW201633414A TW 201633414 A TW201633414 A TW 201633414A TW 104123915 A TW104123915 A TW 104123915A TW 104123915 A TW104123915 A TW 104123915A TW 201633414 A TW201633414 A TW 201633414A
Authority
TW
Taiwan
Prior art keywords
metal
layer
paste
photoresist layer
opening
Prior art date
Application number
TW104123915A
Other languages
English (en)
Other versions
TWI669763B (zh
Inventor
柏吉斯古伊Ｆ
特西爾希歐多爾傑拉得
克帝斯安東尼保羅
湯普森莉莉安查爾
Original Assignee
飛立帕奇帕國際股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 飛立帕奇帕國際股份有限公司 filed Critical 飛立帕奇帕國際股份有限公司
Publication of TW201633414A publication Critical patent/TW201633414A/zh
Application granted granted Critical
Publication of TWI669763B publication Critical patent/TWI669763B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/03—Manufacturing methods
    • H01L2224/034—Manufacturing methods by blanket deposition of the material of the bonding area
    • H01L2224/0341—Manufacturing methods by blanket deposition of the material of the bonding area in liquid form
    • H01L2224/03426—Chemical solution deposition [CSD], i.e. using a liquid precursor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/03—Manufacturing methods
    • H01L2224/034—Manufacturing methods by blanket deposition of the material of the bonding area
    • H01L2224/03444—Manufacturing methods by blanket deposition of the material of the bonding area in gaseous form
    • H01L2224/0345—Physical vapour deposition [PVD], e.g. evaporation, or sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/03—Manufacturing methods
    • H01L2224/034—Manufacturing methods by blanket deposition of the material of the bonding area
    • H01L2224/03444—Manufacturing methods by blanket deposition of the material of the bonding area in gaseous form
    • H01L2224/03452—Chemical vapour deposition [CVD], e.g. laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/03—Manufacturing methods
    • H01L2224/034—Manufacturing methods by blanket deposition of the material of the bonding area
    • H01L2224/0346—Plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/03—Manufacturing methods
    • H01L2224/034—Manufacturing methods by blanket deposition of the material of the bonding area
    • H01L2224/0346—Plating
    • H01L2224/03462—Electroplating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/03—Manufacturing methods
    • H01L2224/034—Manufacturing methods by blanket deposition of the material of the bonding area
    • H01L2224/0346—Plating
    • H01L2224/03464—Electroless plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/03—Manufacturing methods
    • H01L2224/0347—Manufacturing methods using a lift-off mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/03—Manufacturing methods
    • H01L2224/036—Manufacturing methods by patterning a pre-deposited material
    • H01L2224/0361—Physical or chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/03—Manufacturing methods
    • H01L2224/039—Methods of manufacturing bonding areas involving a specific sequence of method steps
    • H01L2224/03912—Methods of manufacturing bonding areas involving a specific sequence of method steps the bump being used as a mask for patterning the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05073—Single internal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05075—Plural internal layers
    • H01L2224/0508—Plural internal layers being stacked
    • H01L2224/05082—Two-layer arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05124—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05139—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05144—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05155—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05166—Titanium [Ti] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05171—Chromium [Cr] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05172—Vanadium [V] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05184—Tungsten [W] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05639—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05644—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05647—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05655—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05666—Titanium [Ti] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05671—Chromium [Cr] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05672—Vanadium [V] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05684—Tungsten [W] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1131—Manufacturing methods by local deposition of the material of the bump connector in liquid form
    • H01L2224/1132—Screen printing, i.e. using a stencil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/1147—Manufacturing methods using a lift-off mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/1147—Manufacturing methods using a lift-off mask
    • H01L2224/11474—Multilayer masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/115—Manufacturing methods by chemical or physical modification of a pre-existing or pre-deposited material
    • H01L2224/11505—Sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/118—Post-treatment of the bump connector
    • H01L2224/11848—Thermal treatments, e.g. annealing, controlled cooling
    • H01L2224/11849—Reflowing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/119—Methods of manufacturing bump connectors involving a specific sequence of method steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/119—Methods of manufacturing bump connectors involving a specific sequence of method steps
    • H01L2224/11901—Methods of manufacturing bump connectors involving a specific sequence of method steps with repetition of the same manufacturing step
    • H01L2224/11902—Multiple masking steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13005—Structure
    • H01L2224/13006—Bump connector larger than the underlying bonding area, e.g. than the under bump metallisation [UBM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13005—Structure
    • H01L2224/13007—Bump connector smaller than the underlying bonding area, e.g. than the under bump metallisation [UBM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1301—Shape
    • H01L2224/13012—Shape in top view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1301—Shape
    • H01L2224/13012—Shape in top view
    • H01L2224/13013—Shape in top view being rectangular or square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1301—Shape
    • H01L2224/13012—Shape in top view
    • H01L2224/13014—Shape in top view being circular or elliptic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13075—Plural core members
    • H01L2224/1308—Plural core members being stacked
    • H01L2224/13082—Two-layer arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13199—Material of the matrix
    • H01L2224/132—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13199—Material of the matrix
    • H01L2224/13294—Material of the matrix with a principal constituent of the material being a liquid not provided for in groups H01L2224/132 - H01L2224/13291
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13298—Fillers
    • H01L2224/13299—Base material
    • H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13298—Fillers
    • H01L2224/13299—Base material
    • H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13298—Fillers
    • H01L2224/13299—Base material
    • H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13305—Gallium [Ga] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13298—Fillers
    • H01L2224/13299—Base material
    • H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13309—Indium [In] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13298—Fillers
    • H01L2224/13299—Base material
    • H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13311—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13298—Fillers
    • H01L2224/13299—Base material
    • H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13313—Bismuth [Bi] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13298—Fillers
    • H01L2224/13299—Base material
    • H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13316—Lead [Pb] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13298—Fillers
    • H01L2224/13299—Base material
    • H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13317—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/13318—Zinc [Zn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13298—Fillers
    • H01L2224/13299—Base material
    • H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13317—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/1332—Antimony [Sb] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13298—Fillers
    • H01L2224/13299—Base material
    • H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13317—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/13324—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13298—Fillers
    • H01L2224/13299—Base material
    • H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13339—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13298—Fillers
    • H01L2224/13299—Base material
    • H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13344—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13298—Fillers
    • H01L2224/13299—Base material
    • H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13347—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13298—Fillers
    • H01L2224/13299—Base material
    • H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13355—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13298—Fillers
    • H01L2224/13299—Base material
    • H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13363—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/13364—Palladium [Pd] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H01L2224/1401—Structure
    • H01L2224/1403—Bump connectors having different sizes, e.g. different diameters, heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H01L2224/1405—Shape
    • H01L2224/14051—Bump connectors having different shapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00015—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01022—Titanium [Ti]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01031—Gallium [Ga]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01048—Cadmium [Cd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01083—Bismuth [Bi]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/38—Effects and problems related to the device integration
    • H01L2924/381—Pitch distance

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Abstract

本案所含之請求標的揭示用於在半導體晶圓上的凸塊下金屬墊上形成垂直金屬柱及在該金屬柱之頂表面上施用不連續焊帽的方法，其中該金屬柱是由至少一光阻層所界定而成。該方法包括加熱多元素金屬膏，該多元素金屬膏含有可變量的金屬粉末、熔點降低劑及助焊劑，以使金屬粉末燒結成金屬柱並同時使該金屬柱附著於該凸塊下金屬墊。

Description

用於在半導體晶圓上形成柱狀凸塊的方法
本發明大體上關於用於製造半導體元件的改良結構及方法，且特別是關於用來在半導體基板上形成金屬柱的結構及方法。此等結構及方法特別適用於晶圓級晶片尺寸封裝技術及覆晶封裝技術中的電子元件凸植(bumping)。
金屬柱或金屬凸塊是一種垂直互連技術，可利用所屬技術領域中熟悉技術者已知的金屬柱電鍍技術將金屬柱或金屬凸塊附接於半導體晶片或其他微電子元件的接合墊或重分佈金屬墊。如所屬技術領域中熟知般，文中所使用的術語「墊(pad)」為沈積在基板上的層狀金屬結構。
當晶片/元件仍處於晶圓形態時，在晶片/元件上放置金屬柱。若開發出能可靠且有效地在晶圓晶種層上形成金屬柱的方法，金屬柱(例如，銅、金或其他金屬/合金)具有用來作為功能性的凸塊下金屬層(under bump Metallurgy，UBM)及作為具有焊帽之鍍覆式垂直延伸部分的潛力。通常，焊球型覆晶(FC)式及/或晶片尺寸封裝(CSP)式的互連線(或稱「焊點凸塊」)需要合 適的UBM墊來作為晶圓/基板金屬層與焊點凸塊本身之間的接合層及/或擴散阻障層。此等類型的焊球互連線亦要求在元件表面上有足夠的面積，以使得在處理過程中或後續將該元件組裝至另一基板材料時，該等焊球互連線不會擠在一起。
相較於典型的焊點凸塊或焊球CSP互連線， 金屬柱或金屬凸塊提供牢固但可靈活調整的垂直結構(例如在z方向上的結構)。在需要窄互連線寬及需要控制兩表面間(例如，元件與其搭配基板)之間隔距離的應用中，該等金屬柱狀凸塊作為固定間隔中介層以控制該距離，同時較小的焊帽可作為元件與基板之間的節點連接。控制此間隔距離對於整體系統性能及可靠性來說是很重要的。
目前使用多步驟製程來形成金屬柱，該多步驟 製程包括以電沈積法(例如，電鍍或鍍覆)來形成由一或更多個金屬層所組成的金屬柱，且該製程可選用性地包括附加的焊「帽」電沈積步驟。通常利用電沈積法將金屬柱直接鍍在位於半導體晶圓上的下方金屬接合墊上之金屬晶種層上。採用此一連串電鍍沈積步驟的整體製程可能所費不貲且費時。故本案受讓人將另一種包含相同的金屬柱電沈積製程但具有印刷焊帽的方法引入產業中。雖然此方法免除了印刷焊料的需求，但仍保留耗時的金屬柱鍍覆製程。在共有且同在審查中的美國專利案12/828003號中描述有關電鍍金屬柱的附加資料且以引用方式將該案內容全文併入本案。
已知的金屬柱狀凸塊製造方法使用光定義遮 罩材料(例如，光阻)來進行電鍍並形成由電鍍焊料堆高而成的柱狀結構。鍍覆焊料是一種緩慢又昂貴的製程，該製程需要相當多的製程控制。鍍覆製程亦限制焊料較佳使用一般的二元焊料合金(binary solder alloy)。已知相較於二元焊料合金，在製造環境中電鍍較複雜的材料以形成柱狀凸塊的焊料部分是極難以控制的。
相較於相等的FC或CSP焊點凸塊間隔，焊金 屬柱狀凸塊結構亦提供改善的熱傳遞作用及導熱性。對於微電子產業中的某些市場而言，金屬柱狀凸塊結構有潛力作為具成本效益又可靠的互連線選項。然而，需要可靠且成本較低的製造方法來取代電沈積法以用於建構可靠、具經濟效益的固定間隔的金屬柱狀結構。
以下實施方式本質上僅做示範之用且不欲用 來限制本發明或限制本發明的應用及用途。當用於本文中時，「示例性」一詞意旨「作為示範、實例或解說之用」。 因此，文中所述的任何「示例性」實施例未必是優於其他實施例的優先或較佳實施例。文中所述的所有實施例皆為示例性實施例，以供所屬技術領域中熟悉該項技藝者能夠製造或使用本發明且並非用來限制本發明範圍，本發明範圍是由該等請求項所界定。此外，本發明不欲受前述技術領域、先前技術、發明內容或以下實施方式中任何明示或暗示的理論所侷限。
一種用於在半導體元件的金屬基層上建構金 屬柱的方法，該方法包括：在該金屬基層上沈積光阻層，及在該光阻層中建立開口，該開口的總體積是配置用來暴露出金屬基層且進一步配置用來定義金屬柱。該方法進一步包括使用多元素金屬膏實質填滿該光阻層中之開口的總體積，該多元素金屬膏包含金屬部分及非金屬部分，加熱該多元素金屬膏以達到該多元素金屬膏之金屬部分的燒結溫度，藉以至少部分地驅除該多元素金屬膏的非金屬部分，其中該光阻層中之開口總體積的底部部分保有該多元素金屬膏的已燒結金屬部分，且該總體積的頂部部分是空的。在燒結後，使用焊料膏實質填滿該總體積之空的頂部部分，加熱該焊料膏以達到該焊料膏的再流動溫度，藉以形成焊帽，及剝除該光阻層。
一種用於在半導體元件的金屬基層上建構金 屬柱的方法，該方法包括：在該金屬基層上沈積光阻層，在該光阻層中建立開口，且該開口具有一總體積，及使用多元素金屬膏實質填滿該光阻層中之開口的總體積，該多元素金屬膏包含金屬部分及非金屬部分。隨後，加熱該多元素金屬膏以達到該多元素金屬膏之金屬部分的燒結溫度，藉以至少部分地驅除該多元素金屬膏的該非金屬部分，其中該光阻層中之開口總體積的底部部分保有該多元素金屬膏的已燒結金屬部分，且該總體積的頂部部分是空的。
10‧‧‧步驟
20‧‧‧步驟
30‧‧‧步驟
40‧‧‧步驟
50‧‧‧步驟
60‧‧‧步驟
70‧‧‧剝除步驟
90‧‧‧蝕刻步驟
95‧‧‧步驟
100‧‧‧半導體元件
110‧‧‧外接合層
114‧‧‧金屬基層
114’‧‧‧金屬基層殘留部分、凸塊下金屬層、UBM墊
115‧‧‧鈍化金屬
116‧‧‧已圖案化金屬接合墊
117‧‧‧第一層、黏著層
120‧‧‧光阻層
121‧‧‧開口
130‧‧‧粉末/助焊劑/MPD混合物
130’‧‧‧金屬柱
131‧‧‧粉末狀金屬/合金、金屬粉末
132‧‧‧助焊劑/MPD混合物
140‧‧‧焊料
140’‧‧‧焊帽
150‧‧‧附加接合金屬層
200‧‧‧圖案化的機械性模板
為了更完整瞭解本發明，現提供以下圖式以作參考：第1A圖至第1G圖圖示在半導體晶圓元件上的下方金屬墊上覆有金屬基層，並示出在該金屬基層頂部上建構金屬柱狀凸塊結構的方法；第2A圖至第2G圖圖示在半導體晶圓元件上的下方金屬墊上覆有金屬基層，並示出使用電沈積形成增加厚度之粘合層以在該金屬基層頂部上建構金屬柱狀凸塊結構的方法；第3A圖至第3G圖圖示在半導體晶圓元件上的下方金屬墊上覆有已經過定義的金屬基層，並示出在已定義的金屬基層頂部及周圍建構金屬柱狀凸塊結構的方法；第4圖圖示在燒結該金屬柱之後，使用模板來調整位在金屬柱狀凸塊結構頂部上的焊帽之高度；文中舉出的範例圖示特定的示例性實施例，且此等範例不欲以任何方式構成限制。
在此案文件中，關係用語(例如第一及第二)及類似用語可能僅是用來區分一實體或動作與另一實體或動作，而未必要求或暗示此等實體或動作之間有任何實際的此種關係或順序。除非請求項的文字做出特別界定，否則數字序數(例如「第一」、「第二」、「第三」，等等)單純表示複數個體中的不同個體，且無暗示任何順序 或序列。除非請求項的文字做出特別界定，否則在任何請求項中的文字順序並無暗示必須採用此順序的時間或邏輯順序來執行製程步驟。在不偏離本發明範圍的情況下，可採任意順序來互換所揭示的製程步驟，只要此種互換不會與請求項的文字相抵觸且在邏輯上不是無意義即可。
此外，根據上下文，除非有載明，否則用於描 述不同元件之間關係的用語(例如「連接」或「耦接」)未暗示此等元件之間必須有直接的物理連接。例如，兩元件彼此之間可透過一或更多個附加元件而進行物理連接、電性連接、邏輯連接或任何其他方式的連接。
文中所使用的「約」或「大約」一詞意指當提 到一數字為「約」或「大約」時包括所述數字加或減該所述數字的1%~10%。例如，約50度可意指45~55度或僅只49度~51度，視情況而定。每當文中出現此範圍時，例如「45~55」，意指該指定範圍內的每個整數；例如，「45%~55%」意指該百分比可為45%、46%，等等，至達到並包括55%。當文中描述的範圍包括小數值時，例如「1.2%~10.5%」，該範圍意指在該指定範圍內示出的每一個最小增量的小數值；例如，「1.2%~10.5%」意指該百分比可為1.2%、1.3%、1.4%、1.5%，等等，至達到並包括10.5%；同時「1.20%至10.50%」意指該百分比可為1.20%、1.21%、1.22%、1.23%，等等，至達到並包括10.50%。
當用於文中時，「實質上」一詞意指很大範圍 或很大程度上。例如，「實質上」一般是指至少約90%加或減10%，常為至少約95%，經常為至少99%，且更常為至少約99.9%。
「合金」一詞意指含有兩種或更多種金屬的物 質，且視情況需要可含有附加的非金屬，當熔融時，在該合金中該合金的元素融合在一起或彼此互溶。在文中，合金是作為多元素「混合物」的相反對照，多元素混合物為含有兩種或更多種金屬及/或金屬合金及/或非金屬的物質(例如，膏狀物)，在多種元素混合物中，該混合物的元素完全不會或尚未融合在一起，或完全不會或尚未彼此互溶。
技術趨勢持續朝向進一步電子元件微型化邁 進且不斷提高功能性以符合技術進展。晶圓級金屬柱技術透過特殊的柱狀設計來符合高功率的應用。藉由電沈積達成晶圓級金屬柱狀凸塊技術是一種已完善建立的方法，儘管該技術相對昂貴，但可為積體電路及在積體電路晶片之間提供高密度、小間距的互連線，同時允許進行高產量組裝製程。
以下文中所述的燒結方法提供更有效率的手 段使用燒結製程來達成金屬柱的建構，相較於所述技術領域中接受的習知電鍍法而言，燒結方法較不昂貴且較快速。文中使用的「燒結(sinter)」一詞意指藉由加熱材料到達液化點但不熔化材料來形成固態材料塊的製程。燒 結本身發生在礦物沉積物中或用來作為金屬、陶瓷、塑膠及其他材料的製造製程。燒結材料中的原子擴散通過較大粒子的物理邊界而與較大粒子融合在一起並形成一整個固體塊。由於燒結溫度無需達到材料的熔點，通常選擇加壓燒結法(sintering under pressure)作為用於具有無法輕易達到之高熔點之材料的塑形製程。冶金粉末相關製程中有關燒結方面的研究稱為粉末冶金學。
有數種不同技術可用來進行燒結。示例性的技 術稱為「液相燒結法」，液相燒結法可用在難以使用一般方法配合使用溫度及壓力進行燒結的材料上。液相燒結法不是利用壓力，而是在金屬粉末中使用添加物，該添加物會比金屬粉末更早融化。該添加物被稱為熔點降低劑(MPD)。
所屬技術領域中所知的液相燒結製程具有三 階段。第一階段是「重排(rearrangement)」。當MPD熔化時，毛細作用會使液態MPD吸入金屬粉末的孔洞內及金屬粉末之間的空隙中，從而允許金屬粉末的晶粒偏移並重排成更有利於堆砌的配置。第二階段是「溶解-析出(solution-precipitation)」。在毛細壓力高的區域中(例如，粒子緊密靠在一起的區域中)，金屬粉末原子將先溶解且隨後在較低化學勢的區域(粒子不緊密或不密接的區域)中析出。此作用稱為「接觸壓扁(contact flattening)」，是以類似於固態燒結法中之晶粒間界擴散作用的方式使該系統緻密化。亦會進行「奧斯華粗化機 制(ostwald ripening)」，在奧斯華粗化機制中，較小粒子將優先溶解且隨後沈析在較大粒子上而導致緻密化。第三階段是「最終緻密化作用」，在最終緻密化作用中，原子從效率堆砌區域移動至正在建立中之一般基質中的孔洞內。對於實際使用液相燒結法而言，固態金屬粉末必需至少微溶於液相中，及在進行固態粒子的任何主要燒結步驟之前，應先熔化該MPD，否則晶粒將不會進行重排。
「焊接(soldering)」是一種藉著使填充在 金屬物品間之空隙中的填充金屬熔化與流動而使兩個或更多個金屬物品接合在一起的製程，所使用之填充金屬的熔點低於該接合金屬的熔點。若在燒結/加熱製程期間，該較低熔點成分(或MPD成分)熔化且在未熔融的金屬成分周圍流動，而使該結構接合在一起，則文中所述的柱狀凸塊形成製程亦可描述為焊接製程。文中描述用來形成柱狀凸塊結構的方法包括使用任何焊接型的製程，在該製程中，具有「焊料潤濕」步驟以使較低熔點成分填充在該柱狀結構的其他金屬成分周圍並使該等其他金屬成分接合在一起。
第1A圖至第1G圖圖示可使用液相燒結製程 製造金屬柱狀凸塊之方法的示例性實施例。在該等圖式中，皆以相同元件符號來代表相同的元件。
第1A圖圖示已鈍化或再鈍化的半導體元件 100，該半導體元件100具有(多個)金屬基層114覆蓋在 已存在的已圖案化金屬接合墊116及鈍化金屬115上。鈍化層115可由該產業中所使用之任何種類或厚度的無機鈍化層或有機鈍化層(包括用於重分佈金屬墊的鈍化層)所組成。在步驟10中，使用所屬技術領域中已知的任何適當沈積方法在鈍化層115上沈積一或更多個金屬基層114。例如，可用來沈積的非限制性方法包括，但不限於，物理及化學薄膜沈積技術(例如，物理氣相沈積法)、電鍍法、化學溶液沈積法、化學氣相沈積法及蒸鍍法。
該(等)金屬基層114可包括複數個層，且各層 是由不同的金屬或金屬合金所組成。作為非限制性的實例，該金屬基層114可包括含有約1500Å之鈦(Ti)的第一層117(例如，黏著層)及由約10000Å之銅(Cu)所形成之外接合層110。可使用其他金屬來建構該金屬基層114中的黏著層、阻障層及接合層/可焊層，及該等其他金屬可包括，但不限於，Al、Ti、Cu、W、Cr、V、Ni、NiV、Au、Ag及上述金屬之合金。在實務上，該外接合層110的厚度範圍可從50Å以下至100000Å以上。較佳者，該外接合層的厚度範圍為10000Å至70000Å，且更佳範圍為5000Å至15000Å。
外接合層110在本文中亦稱為接合層。為求簡 明及易於解說，該金屬基層114以下可視為是銅單接合層110覆蓋住鈦黏著層117。應注意，在以下描述的等效製程中，金屬基層114的數個部分最終可能形成卓越的凸塊下金屬層(UBM)，並將在該凸塊下金屬層上附加金屬柱。
第1B圖圖示塗覆有光阻層120的半導體元件 100。在步驟20中，使用標準光微影製程在整個金屬基層114上沈積(例如，層疊、旋塗或噴塗，等等)可光定義的光阻層120。該光阻層120可為所述技術領域中任何已知的合適光阻層。再者，利用所屬技術領域中任何已知的適當化學或機械方法在光阻層120中建構或顯露出開口121。該等開口121定義出將要建構的金屬柱之尺寸及形狀。通常，開口121的深度將會是期望的金屬柱高度(圖中未示出)加上期望的焊帽高度(圖中未示出)。開口121的深度亦可實質高於或矮於所期望的金屬柱高度(圖中未示出)加上所期望的焊帽高度(圖中未示出)。開口121可為圓形、橢圓形、具橢圓末端的長形或多角形(例如，三角形、矩形、五角形、八角形)及類似形狀，且開口121具有預定的總體積。在該光阻層中之開口121的總體積可介於2000立方微米至50,000,000立方微米的範圍間。
第1C圖圖示在光阻層120中具有開口121的 半導體100，在步驟30期間，使用多元素金屬膏(例如，金屬粉末/MPD/助焊劑混合物130)填滿該開口121的總體積。該粉末/助焊劑/MPD混合物130包含金屬部分(例如將要構成金屬柱(圖中未示出)的粉末狀金屬/合金131)及助焊劑/MPD混合物132。可用於粉末/助焊劑/MPD混合物130中之金屬/合金的非限制性示範實例包括Cu、Ni、Pd、Pb、Al、Au、Ag、Zn、Sn、Bi、Sb、Cd、Ga及。在中。該多元素金屬膏中之金屬粒子的 直徑尺寸範圍可介於0.4微米至60微米。由該開口121的直徑及目前填充開口的技術或未來可能發展出用來填充開口之技術的能力來確定此範圍內之較佳粒子尺寸的初步決定。
助焊劑(flux)是該多元素金屬膏的非金屬部 分且可為所述技術領域中任何已知合適的揮發性化學清潔劑、助流劑(flowing agent)或純化劑(purifying agent)。助焊劑在溫度下執行其功能，且在燒結溫度下可以液體或蒸汽的形式驅除該助焊劑。當用於本文中時，該助焊劑可為任何常用的合適助焊劑材料，或可為未來開發出用來製造半導體元件的任何合適之助焊劑材料。
該MPD是一種熔點降低劑(melting point depressant)且可以是熔點比金屬粉末131之熔點要低的任何金屬/合金。可與本案以上所揭示之請求標的聯合使用的MPD之非限制性示範實例包括：Sn、Ag、Cu、Ni、Bi、Pb、Sb、Cd、In、Ga及Zn的金屬/合金。此外，由錫、銀及銅所形成的合金(「SAC」合金)亦可用來作為MPD。
當該粉末/助焊劑MPD混合物130處於未加 熱的形態時，利用所屬技術領域中任何適當的方法，例如印刷或模板印刷(stenciling)，將粉末/助焊劑MPD混合物130物理性地施用在開口121中。依照欲製造期望尺寸之金屬柱的需要，該粉末/助焊劑/MPD混合物130所含的成分可能改變含量。考慮到該(等)開口121已指定的 物理深度及周長，助焊劑的量可在該(等)開口121之總體積的約10%至約90%之間做變化。相對於助焊劑的量而言，該金屬粉末131加MPD的量(兩者合計約佔總體積的90%至10%)越多，最終成品的金屬柱會越高，將於以下內容做進一步解釋。
第1D圖圖示於步驟40經燒結後的半導體元 件100。當該金屬粉末/MPD/助焊劑混合物130的溫度升高至超過該MPD的熔點，但維持低於該金屬粉末131的熔點時，該助焊劑發揮其作為助流且抗氧化劑的功能，及最後以液體或蒸汽的形式驅除該助焊劑。該金屬柱130，的合併燒結體積質量(即，該金屬粉末加熱任何殘餘的MPD)留在該光阻層120之開口121的底部部分中，且同時藉由同一個燒結製程使該金屬柱130’附著於該接合層110。因此，當該金屬粉末/MPD/助焊劑混合物130中之助焊劑的體積是落在該總體積範圍尾端的10%時，則該開口121之總體積的底部部分保持填充有該剩餘90%之總體積，該剩餘90%之總體積包含已燒結的金屬粉末與MPD並轉變成金屬柱。反之，當該金屬粉末/MPD/助焊劑混合物130中之助焊劑的體積是該總體積範圍的90%時，則該開口121的底部部分保持填充有該剩餘10%之總體積的混合物130，該剩餘10%之總體積的混合物130包含已燒結的金屬粉末與殘餘的MPD。因此，該金屬柱130’的尺寸可隨著該光阻層120的厚度及隨著該金屬粉 末/MPD/助焊劑混合物130中之金屬粉末131與MPD132呈現的體積而改變。
第1E圖圖示於步驟50中印刷焊料140之後的 半導體元件100。在燒結並導致金屬粉末/MPD/助焊劑混合物130減少之後，使一定量的焊料140沈積在該光阻層120中之開口121現已變空的頂部部分中。可利用所屬技術領域中任何已知的適當方法來沈積焊料140。用來沈積的非限制性示例方法可為印刷法或模板印刷法。在沈積該焊料之前，可先在(多種)溶液(例如但不限於，溶劑、去離子水或皂化化學劑)中清洗該晶圓且隨後乾燥該晶圓，藉以清除留在該開口121頂部部分處之燒結金屬部分上的助焊劑殘留物。在進行焊料沈積之前，亦可使用乾式清洗方法(例如但不限於，電漿預處理)來清洗該晶圓。
第1F圖圖示於步驟60進行再流動加熱後的 半導體元件100，在該步驟中加熱該半導體元件至達到該焊料140的再流動溫度。該再流動步驟可使焊料140形成與該金屬柱130’接合的焊帽140’。
第1G圖圖示在進行剝除步驟70以從該已平 靜地半導體元件100上去除所有的光阻層120及所有過多的露出金屬基層114之後，而呈現最終形態的半導體元件100。在進行剝除步驟之後，位在金屬柱130’下方的金屬基層殘留部分114’構成該凸塊下金屬層(UBM)114’。應注意，在第1G圖的實施例中，該金屬 柱130’全部位在該凸塊下金屬層(UBM)114’上且僅與該凸塊下金屬層(UBM)114’的上表面接合。
第2A圖至第2G圖圖示可使用燒結製程來製 造金屬柱狀凸塊的延伸方法之示例性實施例。在該等圖式中皆以相同元件編號來表示相同的元件，並以相似的元件符號來表示與第1A圖至第1G圖中之該等元件與步驟相似的元件與步驟。關於以下討論內容，第2A圖至第2G圖實質對應至第1A圖至第1G圖。第2A圖至第2G圖之方法與第1A圖至第1G圖之方法之間的顯著差異是在步驟80中的沈積附加接合金屬層150(見，第2B’圖)，該附加接合金屬層150將會成為位在該金屬柱130’下方之UBM(114’+150)的一部分(請見第2G圖)。由於第1A圖至第1G圖與第2A圖至第2G圖之間有些重複內容，因此將不再對第2A圖至第2G圖進行詳細討論。
第2B’圖圖示經過步驟80後之半導體元件 100，其中附加接合層150沈積在開口121中之UPM 114’的位置處。為了節省成本與時間，希望可在半導體元件100的整個表面上塗覆較薄的接合層110，並在進行步驟30以將該金屬粉末/助焊劑/MPD混合物130施用於開口121中之前，先在步驟80中以額外沈積循環迴路(deposition loop)的方式使用添加方法(例如，電鍍法、無電鍍法及諸如此類方法)增加該接合層110的厚度。在此實施例中，金屬基層110是作為習知的晶種層。
第3A圖至第3G圖圖示可使用燒結製程來製 造金屬柱狀凸塊的等效方法之示例性實施例。在該等圖式中皆以相同元件符號來表示相同的元件，並以相似的元件符號來表示與第1A圖至第1G圖中所示之該等元件及步驟相似的元件及步驟。關於以下討論內容，第3A圖至第3G圖實質對應至第1A圖至第1G圖。第3A圖至第3G圖之方法與第1A圖至第1G圖之方法之間的顯著差異在於，在進行步驟20以形成光阻層120之前，先使用附加的光阻遮罩且隨後進行蝕刻步驟90來建構位於該金屬柱130’下方的習知凸塊下金屬層(UBM)114’(見第3A’圖)。由於第1A圖至第1G圖與第2A圖至第2G圖之間有些重複內容，故將不再對該等圖式進行詳細討論。
第3A’圖圖示在步驟10中沈積黏著層117及 接合層110(即，共同組成該金屬基層114)之後的半導體元件100。在步驟90中，藉由塗覆習知的光阻劑並遮住預期的UBM位置而從該半導體元件100的表面上去除大部份的金屬基層114。因此，利用蝕刻來去除該接合層110及黏著層117，只留下覆蓋在既有金屬接合墊116之區域中及位在該UBM周圍任何希望保留之附加延伸區域中的接合層110及黏著層117，從而形成該習知的UBM墊114’。殘留的金屬基層110變成UBM 114’。
需指出的是，當於第3B圖的步驟20中沈積光 阻層120時，光阻層120可圍繞在該UBM 114’之周長的周圍(如圖所示)，或光阻層120可使有些光阻層位在該 UBM 114’的較廣面積上(圖中未示出)。該光阻層則完全或幾乎覆蓋住該半導體元件100既有的鈍化層115(若有的話)。使該光阻圍繞在該UBM 114’周長四周的配置方式可使後續步驟30中所沈積的金屬粉末/助焊劑/MPD混合物130包圍著UPM 114’並與該UPM 114’的側邊緣接合。
文中所揭示之所有實施例及等效方法的共同 點在於具有附加步驟，該附加步驟可用來擴大該印刷焊料140的高度(z方向)和體積，以使該印刷焊料140的高度和體積超過且高於由該光阻層120之厚度所界定的高度。在第1D圖、第2D圖及第3D圖所示的步驟40中燒結該金屬粉末/助焊劑/MPD混合物130之後，在步驟95中，可在該光阻層120上配置圖案化的機械性模板200(見第4圖中的元件符號200)。可在該圖案化模板200中沈積附加的焊料膏140，藉著填充該開口121的空頂部且在開口121頂部添加沈積量而增加該焊料的總體積，從而提高在進行再流動步驟之後該整體焊帽140’的高度。
上述請求標的僅供示範說明之用且不應解釋 為是限制。在不偏離後附請求項中所闡明之本發明真正精神與範圍的情況下，當可對文中所述請求標的做出各種修飾及變化而無需遵照所圖示及描述的示例性實施例及應用。
10‧‧‧步驟
20‧‧‧步驟
30‧‧‧步驟
40‧‧‧步驟
50‧‧‧步驟
60‧‧‧步驟
70‧‧‧剝除步驟
100‧‧‧半導體元件
110‧‧‧外接合層
114‧‧‧金屬基層
114’‧‧‧金屬基層殘留部分、凸塊下金屬層、UBM墊
115‧‧‧鈍化金屬
116‧‧‧已圖案化金屬接合墊
117‧‧‧第一層、黏著層
120‧‧‧光阻層
121‧‧‧開口
130‧‧‧粉末/助焊劑/MPD混合物
130’‧‧‧金屬柱
131‧‧‧粉末狀金屬/合金、金屬粉末
132‧‧‧助焊劑/MPD混合物
140‧‧‧焊料
140’‧‧‧焊帽

Claims (27)

  1. 一種用於在一半導體元件之一金屬基層上建構一金屬柱的方法，該方法包括以下步驟：在該金屬基層上沈積一光阻層；在該光阻層中建立一開口，該開口具有一總體積以配置用來暴露出該金屬基層且進一步配置用來定義該金屬柱；使用一多元素金屬膏實質填滿該光阻層中之該開口的該總體積，該多元素金屬膏包含一金屬部分及一非金屬部分；加熱該多元素金屬膏以達到該多元素金屬膏之該金屬部分的一燒結溫度，藉以至少部分地驅除該多元素金屬膏的該非金屬部分，其中該光阻層中之該開口的該總體積的一底部部分保有該多元素金屬膏的該已燒結金屬部分，且該總體積的一頂部部分是空的；使用一焊料膏實質填滿該總體積的該空的頂部部分；加熱該焊料膏以達到該焊料膏的一再流動溫度，藉以形成一焊帽；及剝除該光阻層。
  2. 如請求項1所述之方法，其中該多元素金屬膏包括：金屬粉末以作為該金屬部分；及一助焊劑材 料及一溶劑之其中一者或兩者以作為該非金屬部分。
  3. 如請求項2所述之方法，其中該多元素金屬膏亦包括一熔點降低劑(MPD)。
  4. 如請求項3所述之方法，其中該MPD選自於由以下金屬所構成的金屬群組中：Sn、Ag、Cu、Ni、Bi、Pb、Sb、Cd、In、Ga、Zn及上述金屬之合金。
  5. 如請求項2所述之方法，其中該金屬部分選自於由以下金屬所構成的金屬群組中：Cu、Ni、Pd、Pb、Al、Au、Ag、Zn、Sn、Bi、Sb、Cd、Ga、In及上述金屬之合金。
  6. 如請求項1所述之方法，其中該金屬基層包括複數個金屬層，該複數個金屬層各自是由一不同的金屬或金屬合金所形成，其中該複數個金屬層進一步包括與該光阻層接觸的一外接合層及包括一或更多個內層。
  7. 如請求項6所述之方法，其中該金屬基層的該外接合層為銅。
  8. 如請求項6所述之方法，其中該最內層為選自於以下群組中的一金屬：Al、Ti、Cu、W、Cr、Ni、v、Au及上述金屬之合金。
  9. 如請求項6所述之方法，進一步包括沈積附加金屬在該外接合層上，藉以增加該光阻層中之該開 口內的該外接合層的該厚度。
  10. 如請求項6所述之方法，其中該金屬基層的該外接合層選自於以下群組中：Cu、Au、Ni、Ag及上述金屬之合金。
  11. 如請求項1所述之方法，其中該金屬基層是一由銅所形成的單層。
  12. 如請求項1所述之方法，其中該光阻層中的該開口定義出具有一形狀的該金屬柱，該形狀選自以下形狀所構成之群組中的一形狀：具有多角端或圓頭端的圓形、橢圓形、長橢圓形、五角形、六角形、八角形及矩形。
  13. 如請求項1所述之方法，其中在沈積該焊料膏之前，先清除該光阻層中之該開口的該頂部部分的助焊劑殘餘物。
  14. 如請求項13所述之方法，其中使用溶劑、去離子水、皂化化學劑或電漿預處理製程之其中至少一者來清除該光阻層中之該開口的該頂部部分的助焊劑殘餘物。
  15. 如請求項1所述之方法，其中使用該光阻作為該模板進行印刷或模板印刷以使該多元素金屬膏實質填滿該光阻層中之該開口的該總體積。
  16. 如請求項1所述之方法，其中在一過度液 相燒結製程中同時完成驅除該金屬膏之該非金屬部分的步驟及使該金屬膏之該金屬部分再流動的步驟。
  17. 如請求項1所述之方法，其中在形成該金屬柱及去除該光阻層之後，蝕刻該金屬基層的一暴露部分。
  18. 如請求項1所述之方法，其中在沈積該光阻層之前，對該金屬基層進行光定義及蝕刻以形成一凸塊下金屬墊。
  19. 如請求項1所述之方法，其中使用該光阻作為該模板進行印刷或模板印刷以使該焊料膏實質填滿該總體積的該空的頂部部分。
  20. 如請求項19所述之方法，進一步包括利用印刷法或模板印刷法之其中一者將該焊料膏印入置於該光阻層頂部上的一模板中，以在該光阻層中的該開口上方沈積一規定量的附加焊料，該模板配置用以在該光阻層中的該開口頂部沈積一規定量的焊料膏。
  21. 如請求項1所述之方法，其中該金屬柱是建構在位於該半導體元件之一下方金屬接合墊及該半導體元件之一重分佈金屬墊其中一者頂部上的該金屬基層上。
  22. 如請求項21所述之方法，其中該金屬柱是建構在該金屬基層上且亦位在與該金屬接合墊相鄰的 一鈍化層之一部分上。
  23. 如請求項22所述之方法，其中該鈍化層可由一或更多個層所組成，該一或更多個層是由該產業中所使用之任何種類或厚度的無機鈍化材料或有機鈍化材料所形成，該鈍化材料包括用於重分佈金屬墊的鈍化材料。
  24. 如請求項1所述之方法，其中加熱該多元素金屬膏以達到該燒結溫度的步驟使該多元素金屬膏的該金屬部分至少部分燒結在一起且使該金屬部分與該金屬基層接合。
  25. 如請求項1所述之方法，其中該光阻層中的該開口具有範圍在2000立方微米至50000000立方微米的一總體積。
  26. 如請求項2所述之方法，其中該多元素金屬膏的該金屬粉末部分具有直徑範圍介於0.4微米至60微米間的一顆粒尺寸。
  27. 一種用於在一半導體元件之一金屬基層上建構一金屬柱的方法，該方法包括以下步驟：在該金屬基層上沈積一光阻層；在該光阻層中建立一開口，且該開口具有一總體積；使用一多元素金屬膏實質填滿該光阻層中之該開口 的該總體積，該多元素金屬膏包含一金屬部分及一非金屬部分；加熱該多元素金屬膏以達到該多元素金屬膏之該金屬部分的一燒結溫度，藉以至少部分地驅除該多元素金屬膏的該非金屬部分，其中該光阻層中之該開口的該總體積的一底部部分保有該多元素金屬膏的該已燒結金屬部分，且該總體積的一頂部部分是空的。
TW104123915A 2015-03-11 2015-07-23 用於在半導體晶圓上形成柱狀凸塊的方法 TWI669763B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/644,473 US9831201B2 (en) 2015-03-11 2015-03-11 Methods for forming pillar bumps on semiconductor wafers
US14/644,473 2015-03-11

Publications (2)

Publication Number Publication Date
TW201633414A true TW201633414A (zh) 2016-09-16
TWI669763B TWI669763B (zh) 2019-08-21

Family

ID=56888128

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104123915A TWI669763B (zh) 2015-03-11 2015-07-23 用於在半導體晶圓上形成柱狀凸塊的方法

Country Status (2)

Country Link
US (1) US9831201B2 (zh)
TW (1) TWI669763B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI772335B (zh) * 2017-07-18 2022-08-01 台灣積體電路製造股份有限公司 半導體裝置及其製造方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10224299B2 (en) 2016-12-29 2019-03-05 Intel Corporation Sintered solder for fine pitch first-level interconnect (FLI) applications
US10424552B2 (en) 2017-09-20 2019-09-24 Texas Instruments Incorporated Alloy diffusion barrier layer
CN108046209B (zh) * 2017-11-13 2020-04-03 北京理工大学 一种以su-8胶为回流焊阻焊层的mems元件低温封装方法
US11329018B2 (en) * 2019-10-23 2022-05-10 International Business Machines Corporation Forming of bump structure
WO2021240305A1 (en) * 2020-05-29 2021-12-02 Stmicroelectronics S.R.L. Method of manufacturing semiconductor devices and corresponding semiconductor device

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5716663A (en) 1990-02-09 1998-02-10 Toranaga Technologies Multilayer printed circuit
CA2196024A1 (en) 1996-02-28 1997-08-28 Craig N. Ernsberger Multilayer electronic assembly utilizing a sinterable composition and related method of forming
US5922397A (en) 1997-03-03 1999-07-13 Ormet Corporation Metal-plating of cured and sintered transient liquid phase sintering pastes
US6130195A (en) * 1997-11-03 2000-10-10 Kyzen Corporation Cleaning compositions and methods for cleaning using cyclic ethers and alkoxy methyl butanols
US7527090B2 (en) 2003-06-30 2009-05-05 Intel Corporation Heat dissipating device with preselected designed interface for thermal interface materials
KR101485105B1 (ko) * 2008-07-15 2015-01-23 삼성전자주식회사 반도체 패키지
KR20120032463A (ko) 2009-04-02 2012-04-05 오르멧 서키츠 인코퍼레이티드 혼합된 합금 충전재를 함유하는 전도성 조성물
US9627254B2 (en) 2009-07-02 2017-04-18 Flipchip International, Llc Method for building vertical pillar interconnect
US8840700B2 (en) 2009-11-05 2014-09-23 Ormet Circuits, Inc. Preparation of metallurgic network compositions and methods of use thereof
KR20130002980A (ko) 2010-03-02 2013-01-08 가부시끼가이샤 도꾸야마 메탈라이즈드 기판의 제조 방법
US8902565B2 (en) 2010-05-26 2014-12-02 Kemet Electronics Corporation Electronic component termination and assembly by means of transient liquid phase sintering and polymer solder pastes
US20140110153A1 (en) 2012-01-17 2014-04-24 Panasonic Corporation Wiring board and method for manufacturing the same
US9583453B2 (en) 2012-05-30 2017-02-28 Ormet Circuits, Inc. Semiconductor packaging containing sintering die-attach material
US20140120356A1 (en) 2012-06-18 2014-05-01 Ormet Circuits, Inc. Conductive film adhesive
US9005330B2 (en) 2012-08-09 2015-04-14 Ormet Circuits, Inc. Electrically conductive compositions comprising non-eutectic solder alloys
CN105142825A (zh) 2012-09-27 2015-12-09 阿洛梅特公司 形成具有功能梯度材料的新颖组合物的金属或陶瓷制品的方法和包含所述组合物的制品
WO2014082100A1 (en) 2012-11-16 2014-05-30 Ormet Circuits Inc. Alternative compositions for high temperature soldering applications
JP6423369B2 (ja) 2013-02-15 2018-11-14 オーメット サーキッツ インク 多層電子基体ｚ軸内部接続構造物

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI772335B (zh) * 2017-07-18 2022-08-01 台灣積體電路製造股份有限公司 半導體裝置及其製造方法

Also Published As

Publication number Publication date
TWI669763B (zh) 2019-08-21
US9831201B2 (en) 2017-11-28
US20160268223A1 (en) 2016-09-15

Similar Documents

Publication Publication Date Title
TWI669763B (zh) 用於在半導體晶圓上形成柱狀凸塊的方法
US7829380B2 (en) Solder pillar bumping and a method of making the same
US9627254B2 (en) Method for building vertical pillar interconnect
US9012266B2 (en) Copper post solder bumps on substrates
US9013037B2 (en) Semiconductor package with improved pillar bump process and structure
US20110003470A1 (en) Methods and structures for a vertical pillar interconnect
Koh et al. Copper pillar bump technology progress overview
CN105977166A (zh) 用于在半导体装置的金属基极层上产生金属柱的方法
TWI538136B (zh) 半導體封裝件及其製造方法
US11127704B2 (en) Semiconductor device with bump structure and method of making semiconductor device
JP2008500181A (ja) はんだの組成物、及びはんだ接続部を製造する方法
US8637391B2 (en) Flip chip semiconductor assembly with variable volume solder bumps
JP2022553666A (ja) バンプ構造の形成
US20100029074A1 (en) Maskless Process for Solder Bump Production
TW200845251A (en) Bump structure for semiconductor device
TW533556B (en) Manufacturing process of bump
CN116884862B (zh) 一种基于3d打印的凸点制作方法及芯片封装结构
JP5577378B2 (ja) 半田バンプ形成方法