TW201633393A - Wafer processing method - Google Patents
Wafer processing method Download PDFInfo
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- TW201633393A TW201633393A TW104141528A TW104141528A TW201633393A TW 201633393 A TW201633393 A TW 201633393A TW 104141528 A TW104141528 A TW 104141528A TW 104141528 A TW104141528 A TW 104141528A TW 201633393 A TW201633393 A TW 201633393A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- Microelectronics & Electronic Packaging (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
本發明係關於晶圓的加工方法，尤其，關於對晶圓的外周部進行切削來修邊的加工方法。 The present invention relates to a method of processing a wafer, and more particularly to a method of processing for trimming an outer peripheral portion of a wafer.
對於晶圓等的被處理基板施加背面研磨的話，有晶圓的外周部(邊緣)形成為銳角，背面研磨後的晶圓破損之狀況。因此，在對晶圓進行背面研磨之前，利用預先去除晶圓的外周部之一部分，減低晶圓之外周部的破損(例如，參照後述之專利文獻1)。 When the back surface polishing is applied to the substrate to be processed such as a wafer, the outer peripheral portion (edge) of the wafer is formed at an acute angle, and the wafer after the back surface polishing is broken. Therefore, before the back surface polishing of the wafer, the portion of the outer peripheral portion of the wafer is removed in advance, and the damage of the outer peripheral portion of the wafer is reduced (for example, refer to Patent Document 1 described later).
作為進行修邊的時機，有在將黏合於晶圓之表面的支持基板，貼合於該表面之前進行之狀況，與將支持基板貼合於晶圓的表面之後進行之狀況。 The timing of trimming is performed after the support substrate adhered to the surface of the wafer is bonded to the surface, and the support substrate is bonded to the surface of the wafer.
〔專利文獻1〕日本特開2007-152906號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2007-152906
然而，在將支持基板貼合於晶圓的表面之前進行修邊的話，因修邊所產生的粒子會附著於晶圓的表面，需要在將支持基板貼合於晶圓的表面之前洗淨晶圓的工程。 However, if the support substrate is trimmed before being bonded to the surface of the wafer, the particles generated by the trimming will adhere to the surface of the wafer, and it is necessary to wash the crystal before bonding the support substrate to the surface of the wafer. Round engineering.
另一方面，在將支持基板貼合於晶圓的表面之後進行修邊的話，則成為隔著支持基板對晶圓進行切削，以切削刀切削之部分的體積變大，加工速度降低，產品的生產效率會降低。又，對於為了提升加工速度來說，需要使用較大的鑽石刀，也有對於正在修邊之晶圓的傷害增大，會導致加工品質的降低的問題。 On the other hand, when the support substrate is bonded to the surface of the wafer and then trimmed, the wafer is cut by the support substrate, and the volume of the portion cut by the cutter is increased, and the processing speed is lowered. Production efficiency will decrease. Further, in order to increase the processing speed, it is necessary to use a large diamond knife, and there is also a problem that the damage to the wafer being trimmed is increased, resulting in a decrease in processing quality.
本發明係有鑑於前述情況所發明者，目的為可利用簡易的方法解決如上所述的問題，對於晶圓的外周部進行修邊。 The present invention has been made in view of the above circumstances, and it is an object of the invention to solve the above problems by a simple method and to trim the outer peripheral portion of the wafer.
本發明是形成在表面形成複數裝置的裝置區域與包圍前述裝置區域的外周剩餘區域之晶圓的加工方法，具備：表面保護膠帶黏合工程，係僅於前述外周剩餘區域中隔著接著層，黏合表面保護膠帶；及切削工程，係藉由旋轉的切削刀對晶圓之表面的外周部進行切削，形成具有所定寬度及所定深度的外周切削部。 The present invention relates to a method of forming a wafer in which a device region of a plurality of devices is formed on a surface and a peripheral remaining region surrounding the device region, and includes a surface protection tape bonding process, which is bonded only by an adhesive layer in the remaining peripheral region. The surface protection tape and the cutting process cut the outer peripheral portion of the surface of the wafer by a rotating cutter to form an outer peripheral cutting portion having a predetermined width and a predetermined depth.
前述表面保護膠帶具有覆蓋晶圓的表面整面的面積時，在前述切削工程中，對前述表面保護膠帶進行切削，並且對晶圓的外周部進行切削為佳。 When the surface protective tape has an area covering the entire surface of the wafer, it is preferable to cut the surface protective tape and cut the outer peripheral portion of the wafer in the cutting process.
又，前述表面保護膠帶具有至少覆蓋前述裝置區域的大小時，在前述表面保護膠帶黏合工程中，藉由將前述表面保護膠帶黏合於晶圓的表面，使晶圓的最外周部涵蓋全周而露出；在前述切削工程中，對露出之晶圓的最外周部進行切削為佳。 Moreover, when the surface protection tape has a size covering at least the device area, in the surface protection tape bonding process, the surface protection tape is bonded to the surface of the wafer so that the outermost peripheral portion of the wafer covers the entire circumference. Exposed; in the above cutting process, it is preferable to cut the outermost peripheral portion of the exposed wafer.
在本發明之晶圓的加工方法中，僅於晶圓之包圍裝置區域的外周剩餘區域中隔著接著層，黏合表面保護膠帶之後，實施切削工程，藉由切削刀對晶圓的外周部進行切削，故可防止切削時所產生的粒子附著於裝置區域之狀況。藉此，也不需要具備例如無塵室之作業及昂貴的洗淨功能的裝置，經濟實惠。 In the method for processing a wafer according to the present invention, after the surface protection tape is adhered to the remaining portion of the periphery of the surrounding region of the wafer, the surface protection tape is bonded, and the outer peripheral portion of the wafer is processed by the cutter. By cutting, it is possible to prevent the particles generated during cutting from adhering to the device area. Therefore, it is not necessary to have a device such as a clean room and an expensive washing function, which is economical.
在實施切削工程時，相較於例如將支持基板貼合於晶圓來進行切削之狀況，切削的部分的體積變小，故即使提高切削刀的加工速度，施加於晶圓的傷害也會變小，可獲得高加工品質。又，在從切削工程後的晶圓剝離表面保護膠帶時，因裝置區域不會殘留接著層，故不需要切削工程後之裝置區域的洗淨。 When the cutting process is performed, the volume of the cut portion is reduced as compared with, for example, the case where the support substrate is bonded to the wafer for cutting. Therefore, even if the processing speed of the cutting blade is increased, the damage applied to the wafer is changed. Small, high processing quality can be obtained. Moreover, when the surface protection tape is peeled off from the wafer after the cutting process, since the adhesive layer does not remain in the device region, the cleaning of the device region after the cutting process is not required.
在上述之表面保護膠帶具有覆蓋晶圓之表面整面的面積時，對於晶圓之表面的表面保護膠帶的支持面積變廣，故實施切削工程，與表面保護膠帶一起對晶圓的外周部進行切削時，表面保護膠帶的黏合狀態穩定。 When the surface protective tape described above has an area covering the entire surface of the wafer, the support area of the surface protective tape on the surface of the wafer is widened, so that the cutting process is performed, and the outer peripheral portion of the wafer is performed together with the surface protective tape. When cutting, the surface protection tape is stuck in a stable state.
又，在上述之表面保護膠帶具有至少覆蓋裝 置區域時，在實施切削工程時，只要以切削刀對從表面保護膠帶的周緣露出之晶圓的最外周部進行切削即可，故表面保護膠帶不會與切削刀接觸，切削的部分的體積變更小，可獲得高加工品質，並且可防止接著劑附著於切削刀。 Moreover, the surface protection tape described above has at least a cover When the area is set, the cutting tool can be used to cut the outermost peripheral portion of the wafer exposed from the periphery of the surface protective tape with a cutting blade. Therefore, the surface protective tape does not come into contact with the cutting blade, and the volume of the cut portion is small. The change is small, high processing quality can be obtained, and the adhesion of the adhesive to the cutting blade can be prevented.
1‧‧‧晶圓 1‧‧‧ wafer
2a‧‧‧表面 2a‧‧‧ surface
2b‧‧‧背面 2b‧‧‧back
3‧‧‧預定分割線 3‧‧‧Predetermined dividing line
4‧‧‧裝置 4‧‧‧ device
5‧‧‧裝置區域 5‧‧‧Device area
6‧‧‧外周剩餘區域 6‧‧‧ remaining areas of the periphery
6a‧‧‧第1外周剩餘區域 6a‧‧‧1st remaining area of the periphery
6b‧‧‧第2外周剩餘區域 6b‧‧‧2nd remaining area of the periphery
7‧‧‧外周部 7‧‧‧The outer part
7a‧‧‧最外周部 7a‧‧‧The outermost part
8，9‧‧‧外周切削部 8,9‧‧‧peripheral cutting department
10‧‧‧表面保護膠帶 10‧‧‧Surface protection tape
11‧‧‧接著層 11‧‧‧Next layer
12，12a‧‧‧保持台 12,12a‧‧‧ Keeping the table
13‧‧‧切削刀 13‧‧‧Cutter
14‧‧‧支持基板 14‧‧‧Support substrate
15‧‧‧研磨手段 15‧‧‧Abrasive means
150‧‧‧主軸 150‧‧‧ Spindle
151‧‧‧座 151‧‧‧
152‧‧‧研磨輪 152‧‧‧ grinding wheel
153‧‧‧研磨砥石 153‧‧‧ grinding diamonds
16‧‧‧接著劑 16‧‧‧Adhesive
20‧‧‧表面保護膠帶 20‧‧‧Surface protection tape
21‧‧‧接著層 21‧‧‧Next layer
〔圖1〕揭示晶圓之一例的立體圖。 Fig. 1 is a perspective view showing an example of a wafer.
〔圖2〕揭示加工方法的第1例之表面保護膠帶黏合工程的剖面圖。 Fig. 2 is a cross-sectional view showing the surface protective tape bonding process of the first example of the processing method.
〔圖3〕揭示加工方法的第1例之切削工程的剖面圖。 Fig. 3 is a cross-sectional view showing a cutting process of a first example of the processing method.
〔圖4〕揭示藉由加工方法的第1例之切削工程，對晶圓的外周部施加修邊的剖面圖。 FIG. 4 is a cross-sectional view showing the trimming of the outer peripheral portion of the wafer by the cutting process of the first example of the processing method.
〔圖5〕揭示加工方法的第1例之研磨工程的剖面圖。 Fig. 5 is a cross-sectional view showing a polishing process of a first example of the processing method.
〔圖6〕揭示加工方法的第2例之表面保護膠帶黏合工程的剖面圖。 Fig. 6 is a cross-sectional view showing a surface protective tape bonding process of a second example of the processing method.
〔圖7〕揭示加工方法的第2例之切削工程的剖面圖。 Fig. 7 is a cross-sectional view showing a cutting process of a second example of the machining method.
〔圖8〕揭示藉由加工方法的第2例之切削工程，對晶圓的外周部施加修邊之狀態的剖面圖。 FIG. 8 is a cross-sectional view showing a state in which a trimming is applied to the outer peripheral portion of the wafer by the cutting process of the second example of the processing method.
圖1所示之晶圓1係被加工物之一例，例如藉由圓板狀的矽基板所構成。於晶圓1的表面2a，形成有在藉由格子狀的預定分割線3所區隔之各區域形成裝置4的裝置區域5，與包圍裝置區域5的外周剩餘區域6。 The wafer 1 shown in Fig. 1 is an example of a workpiece, for example, a disk-shaped ruthenium substrate. On the surface 2a of the wafer 1, a device region 5 in which the device 4 is formed in each region separated by a predetermined dividing line 3 in a lattice shape, and a peripheral remaining region 6 in the surrounding device region 5 are formed.
於晶圓1的背面2b，並未形成裝置4，成為藉由研磨砥石等研磨的被研磨面。於晶圓1的外周緣，如圖2所示，從表面2a涵蓋背面2b，形成有倒角成圓弧狀的外周部7。以下，針對進行對晶圓1之外周部7的一部分進行切削去除的修邊，將晶圓1薄化成所希望之完成厚度的加工方法，進行說明。 On the back surface 2b of the wafer 1, the device 4 is not formed, and the surface to be polished is polished by grinding a vermiculite or the like. As shown in FIG. 2, the outer peripheral edge of the wafer 1 covers the back surface 2b from the surface 2a, and the outer peripheral portion 7 which is chamfered in an arc shape is formed. Hereinafter, a description will be given of a processing method in which the trimming of a part of the outer peripheral portion 7 of the wafer 1 is performed, and the wafer 1 is thinned to a desired thickness.
如圖2所示，將保護形成於晶圓1的表面2a之裝置4的表面保護膠帶10，黏合於晶圓1的表面2a。表面保護膠帶10係具有覆蓋晶圓1的表面2a整面的面積。於表面保護膠帶10，僅於與圖1所示之晶圓1的外周剩餘區域6接觸之周緣部分形成有接著層11，接著層11係以對於例如由矽等所成的基板具有接著力的糊膏所構成。另一方面，於與表面保護膠帶10的裝置4接觸之面，並未形成接著層。 As shown in FIG. 2, the surface protective tape 10 for protecting the device 4 formed on the surface 2a of the wafer 1 is bonded to the surface 2a of the wafer 1. The surface protection tape 10 has an area covering the entire surface of the surface 2a of the wafer 1. In the surface protective tape 10, only the peripheral layer portion which is in contact with the peripheral remaining region 6 of the wafer 1 shown in FIG. 1 is formed with an adhesive layer 11, and the layer 11 is followed by an adhesive force for a substrate formed of, for example, tantalum or the like. Made up of paste. On the other hand, an adhesive layer is not formed on the surface in contact with the device 4 of the surface protective tape 10.
將如此構成之表面保護膠帶10黏合於晶圓1 時，僅於晶圓1的外周剩餘區域6中隔著接著層11將表面保護膠帶10黏合於表面2a。表面保護膠帶10中未形成接著層的部分，係以吸收裝置4之凹凸的方式，密接於晶圓1。再者，於圖2中，揭示表面保護膠帶10對於凹凸不空出空間而密接之樣子，但是，作為接觸凹凸的一部分之狀態亦可。藉此，藉由表面保護膠帶10，覆蓋晶圓1的表面2a整面而保護裝置4。再者，利用對於晶圓1的外周剩餘區域6直接塗布接著劑，透過該接著劑，將不具有接著劑的膠帶黏合於外周剩餘區域6，覆蓋晶圓1的表面2a整面亦可。 Bonding the surface protective tape 10 thus constructed to the wafer 1 At this time, the surface protective tape 10 is bonded to the surface 2a only via the adhesive layer 11 in the outer peripheral remaining region 6 of the wafer 1. The portion of the surface protective tape 10 where the adhesive layer is not formed is adhered to the wafer 1 so as to absorb the unevenness of the device 4. In addition, in FIG. 2, it is disclosed that the surface protection tape 10 is in close contact with each other in the space where the unevenness does not exist, but it may be in a state of being a part of the contact unevenness. Thereby, the device 4 is protected by covering the entire surface 2a of the wafer 1 with the surface protective tape 10. Further, the adhesive is applied directly to the outer peripheral remaining region 6 of the wafer 1, and the adhesive without the adhesive is adhered to the outer peripheral remaining region 6 through the adhesive to cover the entire surface 2a of the wafer 1.
實施表面保護膠帶黏合工程之後，如圖3所示，藉由可旋轉的切削刀13對於晶圓1的外周部7進行修邊。再者，作為使用的切削刀13，刀的刀刃以平面形狀構成的型式者為佳。 After the surface protection tape bonding process is performed, as shown in FIG. 3, the outer peripheral portion 7 of the wafer 1 is trimmed by the rotatable cutter 13. Further, as the cutting blade 13 to be used, it is preferable that the blade of the blade is formed in a planar shape.
具體來說，將晶圓1的背面2b側載置於保持台12，藉由未圖示的吸引源，以保持台12吸引保持晶圓1。接下來，使保持台12移動至切削刀13的下方，一邊使切削刀13於例如箭頭B方向旋轉，一邊使切削刀13往接近晶圓1的表面2a的方向下降，將切削刀13的刀刃從表面保護膠帶10側切入。 Specifically, the back surface 2b side of the wafer 1 is placed on the holding stage 12, and the holding stage 12 is sucked and held by the holding stage 12 by a suction source (not shown). Then, the holding table 12 is moved below the cutting blade 13, and the cutting blade 13 is rotated in the direction of the arrow B, and the cutting blade 13 is lowered toward the surface 2a of the wafer 1, and the cutting edge of the cutting blade 13 is used. Cut in from the side of the surface protection tape 10.
接下來，保持台12將中心軸的轉軸於例如箭頭A方向旋轉。如此一來，隨著切削刀13下降，晶圓1 的外周部7與表面保護膠帶10及接著層11一起被逐漸削除，晶圓1的外周部7被修邊成環狀。修邊中係藉由表面保護膠帶10覆蓋晶圓1之表面2a整面，故藉由切削刀13的切入所發生的粒子不會附著於圖1所示之裝置區域5。 Next, the holding table 12 rotates the rotation axis of the center shaft in, for example, the direction of the arrow A. As a result, as the cutter 13 descends, the wafer 1 The outer peripheral portion 7 is gradually removed together with the surface protective tape 10 and the adhesive layer 11, and the outer peripheral portion 7 of the wafer 1 is trimmed into a ring shape. In the trimming, the surface 2a of the wafer 1 is covered by the surface protective tape 10, so that particles generated by the cutting of the cutting blade 13 do not adhere to the device region 5 shown in Fig. 1.
如此一來藉由修邊，如圖4所示，晶圓1的外周部7的一部分被去除，於晶圓1的外周緣中形成具有所定寬度及所定深度之環狀的溝即外周切削部8。再者，所定寬度係設定為圖1所示之外周剩餘區域6之範圍內的寬度。又，所定深度係設定為從晶圓1的表面2a到所希望之完成厚度的深度。 As a result of trimming, as shown in FIG. 4, a part of the outer peripheral portion 7 of the wafer 1 is removed, and an outer peripheral cutting portion having a predetermined width and a predetermined depth is formed on the outer periphery of the wafer 1. 8. Further, the predetermined width is set to a width within the range of the outer peripheral remaining region 6 shown in FIG. Further, the predetermined depth is set to a depth from the surface 2a of the wafer 1 to a desired finished thickness.
實施切削工程之後，如圖5所示，藉由研磨被加工物的研磨手段15，將晶圓1研磨成為所希望之完成厚度。研磨手段15係具備具有垂直方向之軸心的主軸150、於主軸150的下端中隔著座151而安裝的研磨輪152、及於研磨輪152的下部中固接成環狀的複數研磨砥石153。 After the cutting process is performed, as shown in FIG. 5, the wafer 1 is polished to a desired finished thickness by the polishing means 15 for polishing the workpiece. The polishing means 15 includes a main shaft 150 having an axial center in the vertical direction, a grinding wheel 152 attached to the lower end of the main shaft 150 via a seat 151, and a plurality of grinding stones 153 fixed in a ring shape in a lower portion of the grinding wheel 152. .
研磨晶圓1時，從圖4所示之晶圓1的表面2a剝離表面保護膠帶10。之後，如圖5所示，透過接著劑16等，將支持基板14貼合於表面2a。接下來，藉由未圖示的吸引源，以保持台12a吸引保持支持基板14側，使晶圓1的背面2b朝上露出。再者，支持基板14例如以矽基板、玻璃基板等形成。 When the wafer 1 is polished, the surface protection tape 10 is peeled off from the surface 2a of the wafer 1 shown in FIG. Thereafter, as shown in FIG. 5, the support substrate 14 is bonded to the surface 2a through the adhesive 16 or the like. Next, the support substrate 14 is sucked and held by the holding stage 12a by a suction source (not shown), and the back surface 2b of the wafer 1 is exposed upward. Further, the support substrate 14 is formed, for example, by a tantalum substrate, a glass substrate, or the like.
之後，使保持台12a於例如箭頭A方向旋轉，並且研磨手段15一邊使研磨輪152於例如箭頭A方向旋轉，一邊使研磨砥石153下降至接觸晶圓1的背面2b為止。然後，一邊以研磨砥石152按壓背面2b，一邊對晶圓1進行研磨到晶圓1的外周緣中殘存之外周部7的外周切削部8為止，將外周部7完全去除。如此一來，將晶圓1作成為所希望之完成厚度。被作成為所希望之厚度的晶圓1，之後，利用公知的方法，與支持基板14一起被切割，成為最後產品。 Thereafter, the holding table 12a is rotated in the direction of the arrow A, for example, and the polishing means 15 lowers the grinding stone 153 to contact the back surface 2b of the wafer 1 while rotating the grinding wheel 152 in the direction of the arrow A, for example. Then, while the back surface 2b is pressed by the grinding vermiculite 152, the wafer 1 is polished until the outer peripheral cutting portion 8 of the outer peripheral portion 7 remains in the outer peripheral edge of the wafer 1, and the outer peripheral portion 7 is completely removed. In this way, the wafer 1 is made to have a desired finished thickness. The wafer 1 having a desired thickness is formed, and then cut together with the support substrate 14 by a known method to become the final product.
如此，在晶圓的加工方法的第1例中，實施表面保護膠帶10具有覆蓋晶圓1之表面2a整面的面積，僅於外周剩餘區域6中隔著接著層11將表面保護膠帶10黏合於晶圓1的表面2a的表面保護膠帶黏合工程後，實施以切削刀13對於晶圓1之連表面保護膠帶10一起的外周部7，進行修邊的切削工程，故使對於晶圓1之表面保護膠帶10的黏合狀態穩定之狀況下，可不讓切削時產生的粒子附著於裝置區域5，容易對外周部7進行修邊。如先前般，相較於將支持基板貼合於晶圓1來進行修邊之狀況，以切削刀13進行切削之部分的體積變小，故可將切削刀13的加工速度設定為較高。 As described above, in the first example of the method for processing a wafer, the surface protective tape 10 is provided to cover the entire surface of the surface 2a of the wafer 1, and the surface protective tape 10 is bonded only to the outer peripheral portion 6 via the adhesive layer 10. After the surface protection tape bonding work on the surface 2a of the wafer 1 is performed, the outer peripheral portion 7 of the wafer 1 with the surface protective tape 10 attached thereto is subjected to a trimming process, so that the wafer 1 is processed. When the bonding state of the surface protective tape 10 is stabilized, it is possible to prevent the particles generated during cutting from adhering to the device region 5, and it is easy to trim the outer peripheral portion 7. As before, the volume of the portion to be cut by the cutting blade 13 is reduced as compared with the case where the supporting substrate is bonded to the wafer 1 to perform trimming, so that the processing speed of the cutting blade 13 can be set high.
實施切削工程之後，需要包含晶圓1之外周部7與背面2b的晶圓1整體的洗淨，但是，晶圓1的表面2a被表面保護膠帶10保護，故例如可使用刷子或藥品來容易洗淨。又，在表面保護膠帶黏合工程中，僅於外周 剩餘區域中隔著接著層黏合表面保護膠帶，在表面保護膠帶10與裝置區域5之間不存在有接著層，故即使從切削後的晶圓1的表面2a剝離表面保護膠帶10，裝置區域5也不會殘留接著層，不需要裝置區域5的洗淨。 After the cutting process is performed, it is necessary to wash the entire wafer 1 including the outer peripheral portion 7 and the rear surface 2b of the wafer 1. However, the surface 2a of the wafer 1 is protected by the surface protective tape 10, so that it is easy to use, for example, a brush or a medicine. Wash. Also, in the surface protection tape bonding project, only in the periphery In the remaining area, the surface protective tape is adhered via the adhesive layer, and there is no adhesive layer between the surface protective tape 10 and the device region 5, so even if the surface protective tape 10 is peeled off from the surface 2a of the cut wafer 1, the device region 5 The subsequent layer is not left, and the cleaning of the device area 5 is not required.
接著，針對圖6所示之對晶圓1之外周部7進行修邊，將晶圓1薄化成所希望之完成厚度的加工方法的第2例，進行說明。再者，在晶圓的加工方法的第2例中，將圖1所示之外周剩餘區域6中，位於裝置區域5的附近的部分作為第1外周剩餘區域6a，將位於比第1外周剩餘區域6a在直徑方向更外側，被施加修邊的部分作為第2外周剩餘區域6b來進行說明。 Next, a second example of a processing method in which the outer peripheral portion 7 of the wafer 1 is trimmed and the wafer 1 is thinned to a desired thickness is shown. Further, in the second example of the wafer processing method, the portion of the outer peripheral remaining region 6 shown in FIG. 1 located in the vicinity of the device region 5 is located as the first outer peripheral remaining region 6a, and will be located outside the first outer periphery. The region 6a is further outward in the diameter direction, and the portion to which the trimming is applied is described as the second outer peripheral remaining region 6b.
如圖6所示，於晶圓1的表面2a黏合比晶圓1直徑小的表面保護膠帶20。表面保護膠帶20具有至少覆蓋圖1所示之裝置區域5的大小。又，於表面保護膠帶20，僅於接觸第1外周剩餘區域6a的周緣部分，形成接著層21。 As shown in FIG. 6, the surface protection tape 20 which is smaller than the diameter of the wafer 1 is bonded to the surface 2a of the wafer 1. The surface protection tape 20 has a size that covers at least the device area 5 shown in FIG. Further, in the surface protection tape 20, the adhesive layer 21 is formed only in contact with the peripheral portion of the first outer peripheral remaining region 6a.
將如此構成之表面保護膠帶20黏合於晶圓1時，僅於第1外周剩餘區域6a中隔著接著層21將表面保護膠帶20黏合於晶圓1的表面2a。藉此，使包含第2外周剩餘區域6b的最外周部7a，涵蓋晶圓1的全周，從表 面保護膠帶20的周緣露出於外側。再者，利用對於晶圓1的第1外周剩餘區域6a直接塗布接著劑，透過該接著劑，將不具有接著劑的膠帶黏合於第1外周剩餘區域6a亦可。 When the surface protective tape 20 thus configured is bonded to the wafer 1, the surface protective tape 20 is bonded to the surface 2a of the wafer 1 only via the adhesive layer 21 in the first outer peripheral remaining region 6a. Thereby, the outermost peripheral portion 7a including the second outer peripheral remaining region 6b covers the entire circumference of the wafer 1, and the table The peripheral edge of the face protection tape 20 is exposed to the outside. In addition, the adhesive agent may be directly applied to the first outer peripheral remaining region 6a of the wafer 1, and the adhesive may be adhered to the first outer peripheral remaining region 6a by the adhesive.
實施表面保護膠帶黏合工程之後，如圖7所示，藉由切削刀13對於晶圓1的外周緣中露出之最外周部7a進行切削。與晶圓的加工方法的第1例相同，以保持台12吸引保持晶圓1時，使保持台12往切削刀13的下方移動。接下來，一邊使切削刀13於例如箭頭B方向旋轉，一邊使切削刀13往接近晶圓1的表面2a的方向下降，將切削刀13的刀刃直接切入晶圓1的最外周部7a。 After the surface protection tape bonding process is performed, as shown in FIG. 7, the outermost peripheral portion 7a exposed in the outer periphery of the wafer 1 is cut by the cutter 13. Similarly to the first example of the wafer processing method, when the holding stage 12 sucks and holds the wafer 1, the holding table 12 is moved below the cutting blade 13. Then, while the cutting blade 13 is rotated in the direction of the arrow B, for example, the cutting blade 13 is lowered in the direction approaching the surface 2a of the wafer 1, and the cutting edge of the cutting blade 13 is directly cut into the outermost peripheral portion 7a of the wafer 1.
接下來，保持台12使中心軸的轉軸於例如箭頭A方向旋轉，並且隨著旋轉的切削刀13下降，最外周部7a逐漸被削除，對晶圓1的最外周部7a全部進行修邊。此時，因為表面保護膠帶20僅覆蓋晶圓1的表面2a的裝置區域5，切削刀13不會接觸表面保護膠帶20。 Next, the holding table 12 rotates the rotation axis of the center shaft in, for example, the direction of the arrow A, and as the rotating cutter 13 descends, the outermost peripheral portion 7a is gradually removed, and the outermost peripheral portion 7a of the wafer 1 is completely trimmed. At this time, since the surface protective tape 20 covers only the device region 5 of the surface 2a of the wafer 1, the cutting blade 13 does not contact the surface protective tape 20.
如此一來，藉由修邊，如圖8所示，晶圓1的最外周部7a的一部分被去除，於晶圓1的外周緣中形成具有所定寬度及所定深度之環狀的溝即外周切削部9。之後，與晶圓的加工方法的第1例相同，將支持基板黏合於該表面2a之後實施研磨工程，對晶圓1進行背面研磨至晶圓1的外周緣中殘存之最外周部7a的外周切削部為 止，完全去除該最外周部7a。然後，被作成為所希望之厚度的晶圓1，之後，與加工方法的第1例相同，與支持基板一起被切割，成為最後產品。 As a result, as shown in FIG. 8, a part of the outermost peripheral portion 7a of the wafer 1 is removed, and a peripheral groove having a predetermined width and a predetermined depth is formed on the outer periphery of the wafer 1, that is, the outer periphery. Cutting portion 9. Thereafter, in the same manner as in the first example of the wafer processing method, the support substrate is bonded to the surface 2a, and then the polishing process is performed, and the wafer 1 is back-polished to the outer periphery of the outermost peripheral portion 7a remaining in the outer periphery of the wafer 1. Cutting part is Then, the outermost peripheral portion 7a is completely removed. Then, the wafer 1 having a desired thickness is formed, and then, similarly to the first example of the processing method, it is cut together with the support substrate to become the final product.
如此，在晶圓的加工方法的第2例中，實施表面保護膠帶20具有至少覆蓋裝置區域5的大小，僅於第1外周剩餘區域6a中隔著接著層21，於晶圓1的表面2a黏合表面保護膠帶20，使包含第2外周剩餘區域6b的最外周部7a，涵蓋晶圓1之外周緣的全周露出的表面保護膠帶黏合工程，故在實施切削工程，以切削刀13對最外周部7a進行修邊時，表面保護膠帶20不會接觸切削刀13。因此，以切削刀13切削之部分的體積變更小，故可將切削刀13的加工速度設定為較高。又，不對接著層21進行切削，故可防止接著劑附著於切削刀13之狀況。 As described above, in the second example of the method of processing a wafer, the surface protective tape 20 is provided to cover at least the size of the device region 5, and is disposed on the surface 2a of the wafer 1 only via the adhesive layer 21 in the first outer peripheral remaining region 6a. The surface protection tape 20 is bonded to the outermost peripheral portion 7a including the second outer peripheral remaining region 6b, and the surface protective tape that covers the entire periphery of the outer periphery of the wafer 1 is bonded, so that the cutting work is performed on the cutting blade 13 When the outer peripheral portion 7a is trimmed, the surface protection tape 20 does not contact the cutting blade 13. Therefore, since the volume change of the portion cut by the cutter 13 is small, the machining speed of the cutter 13 can be set high. Moreover, since the subsequent layer 21 is not cut, it is possible to prevent the adhesive from adhering to the cutting blade 13.
1‧‧‧晶圓 1‧‧‧ wafer
2a‧‧‧表面 2a‧‧‧ surface
2b‧‧‧背面 2b‧‧‧back
4‧‧‧裝置 4‧‧‧ device
6‧‧‧外周剩餘區域 6‧‧‧ remaining areas of the periphery
7‧‧‧外周部 7‧‧‧The outer part
10‧‧‧表面保護膠帶 10‧‧‧Surface protection tape
11‧‧‧接著層 11‧‧‧Next layer
12‧‧‧保持台 12‧‧‧ Keeping the table
13‧‧‧切削刀 13‧‧‧Cutter
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| US8173518B2 (en) * | 2009-03-31 | 2012-05-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of wafer bonding |
| JP5500942B2 (en) * | 2009-10-28 | 2014-05-21 | 株式会社ディスコ | Wafer processing method |
| JP2011124266A (en) * | 2009-12-08 | 2011-06-23 | Disco Abrasive Syst Ltd | Method of processing wafer |
| JP2012231057A (en) * | 2011-04-27 | 2012-11-22 | Disco Abrasive Syst Ltd | Method for processing wafer |
| JP2013008915A (en) * | 2011-06-27 | 2013-01-10 | Toshiba Corp | Substrate processing method and substrate processing apparatus |
| JP5840003B2 (en) * | 2012-01-23 | 2016-01-06 | 株式会社ディスコ | Wafer processing method |
| JP2013247135A (en) * | 2012-05-23 | 2013-12-09 | Disco Abrasive Syst Ltd | Wafer processing method |
-
2015
- 2015-01-08 JP JP2015002218A patent/JP2016127232A/en active Pending
- 2015-12-10 TW TW104141528A patent/TWI686854B/en active
- 2015-12-30 CN CN201511020218.4A patent/CN105789126A/en active Pending
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2016
- 2016-01-04 KR KR1020160000529A patent/KR20160085704A/en not_active Application Discontinuation
- 2016-01-05 US US14/988,438 patent/US9595463B2/en active Active
- 2016-01-05 DE DE102016200023.3A patent/DE102016200023A1/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI790319B (en) * | 2017-12-19 | 2023-01-21 | 日商東京威力科創股份有限公司 | Substrate processing system and substrate processing method |
Also Published As
| Publication number | Publication date |
|---|---|
| US9595463B2 (en) | 2017-03-14 |
| JP2016127232A (en) | 2016-07-11 |
| US20160204016A1 (en) | 2016-07-14 |
| DE102016200023A1 (en) | 2016-07-14 |
| TWI686854B (en) | 2020-03-01 |
| KR20160085704A (en) | 2016-07-18 |
| CN105789126A (en) | 2016-07-20 |
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