TW201628080A - 矽濃度或蝕刻選擇比的測量方法及測量裝置 - Google Patents
矽濃度或蝕刻選擇比的測量方法及測量裝置 Download PDFInfo
- Publication number
- TW201628080A TW201628080A TW104143777A TW104143777A TW201628080A TW 201628080 A TW201628080 A TW 201628080A TW 104143777 A TW104143777 A TW 104143777A TW 104143777 A TW104143777 A TW 104143777A TW 201628080 A TW201628080 A TW 201628080A
- Authority
- TW
- Taiwan
- Prior art keywords
- etching
- concentration
- measuring
- crystal oscillator
- rate
- Prior art date
Links
- 238000005259 measurement Methods 0.000 title abstract description 45
- 238000000691 measurement method Methods 0.000 title abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 6
- 229910052710 silicon Inorganic materials 0.000 title abstract 6
- 239000010703 silicon Substances 0.000 title abstract 6
- 238000005530 etching Methods 0.000 claims abstract description 383
- 239000013078 crystal Substances 0.000 claims abstract description 151
- 238000012545 processing Methods 0.000 claims abstract description 34
- 238000004364 calculation method Methods 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 29
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 184
- 239000007788 liquid Substances 0.000 claims description 121
- 230000010355 oscillation Effects 0.000 claims description 97
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 92
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 68
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 55
- 229910052732 germanium Inorganic materials 0.000 claims description 54
- 238000000034 method Methods 0.000 claims description 54
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 51
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 51
- 238000010438 heat treatment Methods 0.000 claims description 29
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 27
- 229910052704 radon Inorganic materials 0.000 claims description 24
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 claims description 24
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 23
- 229910052707 ruthenium Inorganic materials 0.000 claims description 23
- 238000004891 communication Methods 0.000 claims description 21
- 238000007789 sealing Methods 0.000 claims description 21
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 20
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 20
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims description 11
- 229910052684 Cerium Inorganic materials 0.000 claims description 8
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 8
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 8
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 8
- 238000003825 pressing Methods 0.000 claims description 6
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 5
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 5
- 238000012546 transfer Methods 0.000 claims description 4
- 229910052792 caesium Inorganic materials 0.000 claims description 3
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- 239000010948 rhodium Substances 0.000 claims 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 72
- 239000000463 material Substances 0.000 description 17
- 238000003380 quartz crystal microbalance Methods 0.000 description 16
- 229910052691 Erbium Inorganic materials 0.000 description 13
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 13
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 8
- 239000004810 polytetrafluoroethylene Substances 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 239000007864 aqueous solution Substances 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 229920001971 elastomer Polymers 0.000 description 5
- 238000005070 sampling Methods 0.000 description 5
- 229910052727 yttrium Inorganic materials 0.000 description 5
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000009835 boiling Methods 0.000 description 4
- 239000004918 carbon fiber reinforced polymer Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000003085 diluting agent Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229920002430 Fibre-reinforced plastic Polymers 0.000 description 3
- 239000004696 Poly ether ether ketone Substances 0.000 description 3
- 238000002835 absorbance Methods 0.000 description 3
- 238000009529 body temperature measurement Methods 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 239000011151 fibre-reinforced plastic Substances 0.000 description 3
- 229910021397 glassy carbon Inorganic materials 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 229920002530 polyetherether ketone Polymers 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229920001973 fluoroelastomer Polymers 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910000457 iridium oxide Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 239000002990 reinforced plastic Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N5/00—Analysing materials by weighing, e.g. weighing small particles separated from a gas or liquid
- G01N5/04—Analysing materials by weighing, e.g. weighing small particles separated from a gas or liquid by removing a component, e.g. by evaporation, and weighing the remainder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Immunology (AREA)
- Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Pathology (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014265311 | 2014-12-26 | ||
| JP2014265323 | 2014-12-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201628080A true TW201628080A (zh) | 2016-08-01 |
Family
ID=56150452
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104143777A TW201628080A (zh) | 2014-12-26 | 2015-12-25 | 矽濃度或蝕刻選擇比的測量方法及測量裝置 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6668257B2 (ja) |
| TW (1) | TW201628080A (ja) |
| WO (1) | WO2016104433A1 (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109937356A (zh) * | 2016-11-14 | 2019-06-25 | 日本电波工业株式会社 | 物质检测系统及物质检测方法 |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7432092B2 (ja) * | 2018-07-20 | 2024-02-16 | 東京エレクトロン株式会社 | ３ｄ ｎａｎｄ構造における窒化ケイ素のエッチング及びシリカ堆積制御 |
| KR20230044277A (ko) * | 2020-08-31 | 2023-04-03 | 후지필름 가부시키가이샤 | 반도체 디바이스의 제조 방법, 반도체 제조 장치의 세정 방법, 및 세정액의 청정도의 측정 방법 |
| CN112928037B (zh) * | 2021-01-22 | 2023-11-24 | 上海华虹宏力半导体制造有限公司 | 检测方法 |
| CN113050564B (zh) * | 2021-03-12 | 2022-04-26 | 中国科学院近代物理研究所 | 核孔膜蚀刻线自反馈联动生产控制装置 |
| TW202310033A (zh) * | 2021-08-05 | 2023-03-01 | 日商東京威力科創股份有限公司 | 預測方法、預測程式、預測裝置、學習方法、學習程式及學習裝置 |
| GB202212191D0 (en) * | 2022-08-22 | 2022-10-05 | Lam Res Ag | Apparatus and method |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1092789A (ja) * | 1996-09-13 | 1998-04-10 | Nippon Steel Corp | エッチング速度評価方法 |
| EP0990267B1 (en) * | 1998-03-02 | 2005-11-09 | Koninklijke Philips Electronics N.V. | Etching method |
| JP2003273062A (ja) * | 2002-03-13 | 2003-09-26 | Miyota Kk | エッチングレート管理モニター |
| JP3975333B2 (ja) * | 2002-03-29 | 2007-09-12 | セイコーエプソン株式会社 | 処理装置および半導体装置の製造方法 |
| JP5491111B2 (ja) * | 2009-09-17 | 2014-05-14 | セイコー・イージーアンドジー株式会社 | マイクロセンシング装置 |
| US8008087B1 (en) * | 2010-03-25 | 2011-08-30 | Eci Technology, Inc. | Analysis of silicon concentration in phosphoric acid etchant solutions |
| JP2013041923A (ja) * | 2011-08-12 | 2013-02-28 | Apprecia Technology Inc | 燐酸溶液中の珪素濃度測定装置及び測定方法 |
-
2015
- 2015-12-21 WO PCT/JP2015/085688 patent/WO2016104433A1/ja active Application Filing
- 2015-12-21 JP JP2016566352A patent/JP6668257B2/ja not_active Expired - Fee Related
- 2015-12-25 TW TW104143777A patent/TW201628080A/zh unknown
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109937356A (zh) * | 2016-11-14 | 2019-06-25 | 日本电波工业株式会社 | 物质检测系统及物质检测方法 |
| US11156571B2 (en) | 2016-11-14 | 2021-10-26 | Nihon Dempa Kogyo Co., Ltd. | Substance detection system and substance detection method |
| CN109937356B (zh) * | 2016-11-14 | 2021-12-28 | 日本电波工业株式会社 | 物质检测系统及物质检测方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2016104433A1 (ja) | 2016-06-30 |
| JP6668257B2 (ja) | 2020-03-18 |
| JPWO2016104433A1 (ja) | 2017-10-05 |
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