TW201618248A - Wafer level transfer molding and apparatus for performing the same - Google Patents
Wafer level transfer molding and apparatus for performing the same Download PDFInfo
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- 238000001721 transfer moulding Methods 0.000 title description 15
- 238000002347 injection Methods 0.000 claims abstract description 114
- 239000007924 injection Substances 0.000 claims abstract description 114
- 238000000465 moulding Methods 0.000 claims abstract description 80
- 238000000034 method Methods 0.000 claims abstract description 44
- 150000001875 compounds Chemical class 0.000 claims abstract description 22
- 238000013022 venting Methods 0.000 claims abstract description 20
- 239000012778 molding material Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 55
- YQOLEILXOBUDMU-KRWDZBQOSA-N (4R)-5-[(6-bromo-3-methyl-2-pyrrolidin-1-ylquinoline-4-carbonyl)amino]-4-(2-chlorophenyl)pentanoic acid Chemical compound CC1=C(C2=C(C=CC(=C2)Br)N=C1N3CCCC3)C(=O)NC[C@H](CCC(=O)O)C4=CC=CC=C4Cl YQOLEILXOBUDMU-KRWDZBQOSA-N 0.000 description 46
- 229940125844 compound 46 Drugs 0.000 description 45
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- 238000000748 compression moulding Methods 0.000 description 4
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- 229910052732 germanium Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002991 molded plastic Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
- Injection Moulding Of Plastics Or The Like (AREA)
- Casting Or Compression Moulding Of Plastics Or The Like (AREA)
Abstract
Description
本揭露係關於晶圓級轉移成型及用於進行晶圓級轉移成型之設備。 This disclosure relates to wafer level transfer molding and equipment for wafer level transfer molding.
在一般的積體電路封裝中,封裝組件,例如元件晶粒與封裝基板,係經由覆晶接合而形成堆疊。為了保護堆疊的封裝組件,會在元件晶粒周圍設置模塑料。 In a typical integrated circuit package, package components, such as component dies and package substrates, are stacked via flip chip bonding. To protect the stacked package components, a molding compound is placed around the component die.
習知的成型方法包含壓縮成型與轉移成型。壓縮成型可用於包覆成型(over-molding)。由於壓縮成型無法用於填充堆疊晶粒之間的間隙,因此需在壓縮成型時使用另外的步驟以施加底膠填充。另一方面,轉移成型可用於將塑型底膠填充至堆疊的封裝組件之間以及堆疊的封裝組件之上。然而,由於模塑料的流徑不均勻,因而轉移塑型無法用於含有圓形晶圓之晶粒或封裝上。 Conventional molding methods include compression molding and transfer molding. Compression molding can be used for over-molding. Since compression molding cannot be used to fill the gap between the stacked dies, an additional step is required in compression molding to apply the underfill. Transfer molding, on the other hand, can be used to fill a plastic underfill between stacked package components and stacked package components. However, due to the non-uniform flow path of the molding compound, the transfer molding cannot be used on a die or package containing a circular wafer.
本揭露的一些實施例係提供一種方法,其包括將封裝結構設置在模套中,該封裝結構中的元件晶粒之頂部表面係接觸該模套中的釋放膜;將模塑料經由注入埠注入該模套的內部空間中,該注入埠係在該模套的第一側上;以及在注入該模塑料的過程中,經由該模套之第一通氣孔與第二通氣孔通氣,該第一通氣孔具有第一流速, 以及該第二通氣孔具有第二流速,該第二流速係不同於該第一流速。 Some embodiments of the present disclosure provide a method comprising disposing a package structure in a mold sleeve, a top surface of the element die in the package structure contacting a release film in the mold sleeve; injecting the molding compound through the injection cassette In the inner space of the mold sleeve, the injection raft is on the first side of the mold sleeve; and during the injection of the molding compound, the first vent hole and the second vent hole are ventilated through the mold sleeve, the first a vent has a first flow rate, And the second vent has a second flow rate that is different from the first flow rate.
本揭露的一些實施例係提供一種方法,其包括將封裝結構設置在模套的內部空間中,該封裝結構的元件晶粒的頂部表面係接觸該模套中的釋放膜,其中該模套係包括注入埠;以及具有不同尺寸的第一通氣孔與第二通氣孔;將該封裝結構與該模套設置在腔室中,其中該第一通氣孔與該第二通氣孔將該內部空間互連至該模套外部之部分的該腔室;將該腔室抽真空;以及將模塑料經由該注入埠注入該模套的該內部空間中。 Some embodiments of the present disclosure provide a method comprising disposing a package structure in an interior space of a mold sleeve, a top surface of the component die of the package structure contacting a release film in the mold sleeve, wherein the mold sleeve is Including an injection port; and a first vent hole and a second vent hole having different sizes; the package structure and the die sleeve are disposed in the chamber, wherein the first vent hole and the second vent hole mutually interleave the internal space a chamber connected to a portion of the outer portion of the mold sleeve; evacuating the chamber; and injecting molding compound into the inner space of the mold sleeve via the injection bowl.
本揭露的一些實施例係提供一種設備,其包括模套,其包括頂部;以及邊緣環,其具有環形,其中該邊緣環係在該頂部下方並且連接至該頂部,以及其中該邊緣環係包圍該頂部下方的內部空間;注入埠,其連接至該模套的該內部空間;以及第一通氣孔與第二通氣孔,其係位在該邊緣環,其中該第一通氣孔具有第一尺寸,該第二通氣孔具有第二尺寸,該第二尺寸係不同於該第一尺寸。 Some embodiments of the present disclosure provide an apparatus including a mold sleeve including a top portion; and an edge ring having an annular shape, wherein the edge ring is below the top portion and coupled to the top portion, and wherein the edge ring system is surrounded An inner space below the top portion; an injection port connected to the inner space of the mold sleeve; and a first vent hole and a second vent hole that are tied to the edge ring, wherein the first vent hole has a first size The second vent has a second size that is different from the first size.
本揭露的一些實施例係提供一種方法,其包括將封裝結構設置在模套的內部空間中,該模套包括頂部,以及在該頂部下方且連接至該頂部的邊緣環,其中該邊緣環係包圍該頂部下方的該內部空間;以及將成型材料從該模套的第一注入埠與第二注入埠注入該內部空間中,該第一注入埠與該第二注入埠具有不同的尺寸。 Some embodiments of the present disclosure provide a method comprising disposing a package structure in an interior space of a mold sleeve, the mold sleeve including a top portion, and an edge ring below the top portion and coupled to the top portion, wherein the edge ring system Surrounding the inner space below the top portion; and injecting molding material from the first injection port and the second injection port of the mold sleeve into the inner space, the first injection port and the second injection port having different sizes.
本揭露的一些實施例係提供一種方法,其包括將封裝結構設置在模套的內部空間中,該模套係包括頂部,以及在該頂部下方且連接至該頂部的邊緣環,其中該邊緣環係包圍該頂部下方的該內部空間;在第一時間,開始從第一注入埠配送成型材料至該內部空間中,其中該第一注入埠係穿過該模套的該頂部;以及在晚於該第一時間的第二時間,開始從第二注入埠配送該成型材料至該內部空間中,其中該第二注入埠係穿過該模套的該頂部,以及相較於該第一注入 埠,該第二注入埠係較遠離開模套的該頂部之中心。 Some embodiments of the present disclosure provide a method comprising disposing a package structure in an interior space of a mold sleeve, the mold sleeve including a top portion, and an edge ring below the top portion and coupled to the top portion, wherein the edge ring Surrounding the interior space below the top; at the first time, dispensing the molding material from the first injection cassette into the interior space, wherein the first injection cassette passes through the top of the mold sleeve; and later than At the second time of the first time, the molding material is dispensed from the second injection cassette into the inner space, wherein the second injection line passes through the top of the mold sleeve, and compared to the first injection That is, the second injection raft is farther away from the center of the top of the mold sleeve.
本揭露的一些實施例係提供一種方法,其包括將封裝結構設置在模套的內部空間中,該模套係包括頂部,以及在該頂部下方且連接至該頂部的邊緣環,其中該邊緣環係包圍在該頂部下方的該內部空間;以及將成型材料從第一注入埠與第二注入埠注入該內部空間中,其中該第一注入埠與該第二注入埠係穿過該模套的該頂部,以及相較於經由該第二注入埠,有較多的該成型材料係經由該第一注入埠注入。 Some embodiments of the present disclosure provide a method comprising disposing a package structure in an interior space of a mold sleeve, the mold sleeve including a top portion, and an edge ring below the top portion and coupled to the top portion, wherein the edge ring And surrounding the inner space below the top; and injecting molding material into the inner space from the first injection port and the second injection port, wherein the first injection port and the second injection port pass through the mold sleeve The top portion and the molding material are injected through the first injection chamber compared to the second injection chamber.
10‧‧‧封裝結構 10‧‧‧Package structure
20‧‧‧晶圓 20‧‧‧ wafer
22‧‧‧晶粒 22‧‧‧ Grain
26‧‧‧模套 26‧‧‧ mold sets
26A‧‧‧頂部 26A‧‧‧ top
26B‧‧‧邊緣環 26B‧‧‧Edge ring
27‧‧‧釋放膜 27‧‧‧ release film
126‧‧‧模套 126‧‧‧ mold sets
30‧‧‧注入埠 30‧‧‧Injection
32‧‧‧通氣孔 32‧‧‧Ventinel
40‧‧‧配送器 40‧‧‧Distributor
46‧‧‧模塑料 46‧‧‧Molded plastic
52‧‧‧管路 52‧‧‧pipe
36‧‧‧真空環境 36‧‧‧vacuum environment
42‧‧‧直徑 42‧‧‧diameter
44‧‧‧幫浦 44‧‧‧
48‧‧‧閥 48‧‧‧Valves
50‧‧‧腔室 50‧‧‧ chamber
54‧‧‧控制器 54‧‧‧ Controller
20’‧‧‧中心晶片 20’‧‧‧Center wafer
38‧‧‧中心 38‧‧‧ Center
31、33‧‧‧直線 31, 33‧‧‧ Straight line
23‧‧‧黏著劑 23‧‧‧Adhesive
24‧‧‧表面組件 24‧‧‧Surface components
由以下詳細說明與附隨圖式得以最佳了解本揭露之各方面。注意,根據產業之標準實施方式,各種特徵並非依比例繪示。實際上,為了清楚討論,可任意增大或縮小各種特徵的尺寸。 The aspects of the disclosure are best understood by the following detailed description and accompanying drawings. Note that various features are not drawn to scale in accordance with standard implementations of the industry. In fact, the dimensions of the various features may be arbitrarily increased or decreased for clarity of discussion.
圖1係根據一些實施例說明晶圓級轉移成型的剖面圖。 1 is a cross-sectional view illustrating wafer level transfer molding in accordance with some embodiments.
圖2係根據一些實施例說明模套(mold chase)的透視圖。 2 is a perspective view illustrating a mold chase in accordance with some embodiments.
圖3係根據一些實施例說明具有不同尺寸之通氣孔的晶圓級轉移成型製程的俯視圖。 3 is a top plan view of a wafer level transfer molding process with vents of different sizes, in accordance with some embodiments.
圖4係根據其他實施例說明具有連接至不同通氣孔之不同開啟的閥之晶圓級轉移成型製程的俯視圖。 4 is a top plan view of a wafer level transfer molding process having different open valves connected to different vents, in accordance with other embodiments.
圖5至9係根據一些實施例說明時間延遲的晶圓級轉移成型製程之中間步驟的俯視圖。 5 through 9 are top views illustrating intermediate steps of a time delayed wafer level transfer molding process in accordance with some embodiments.
圖10係根據一些實施例說明設備的剖面圖。 Figure 10 is a cross-sectional view illustrating the apparatus in accordance with some embodiments.
圖11與12係分別說明圖10所示之設備的俯視圖與透視圖。 11 and 12 are top and perspective views, respectively, of the apparatus shown in Fig. 10.
圖13與14係根據其他實施例分別說明設備的俯視圖與 概示圖。 13 and 14 respectively illustrate a top view of the device according to other embodiments. Overview map.
圖15係根據一些實施例說明成型的封裝結構。 Figure 15 illustrates a molded package structure in accordance with some embodiments.
圖16係根據一些實施例說明晶圓級轉移成型製程的剖面圖,其中元件晶粒的主動組件係面對釋放膜。 16 is a cross-sectional view illustrating a wafer level transfer molding process in which active components of the element die face the release film, in accordance with some embodiments.
圖17係根據一些實施例說明成型的封裝結構,其中元件晶粒的主動組件係經由所得的成型封裝結構而暴露。 Figure 17 illustrates a molded package structure in which active components of the component die are exposed via the resulting molded package structure, in accordance with some embodiments.
以下揭示內容提供許多不同的實施例或範例,用於實施本申請案之不同特徵。元件與配置的特定範例之描述如下,以簡化本申請案之揭示內容。當然,這些僅為範例,並非用於限制本申請案。例如,以下描述在第二特徵上或上方形成第一特徵可包含形成直接接觸的第一與第二特徵之實施例,亦可包含在該第一與第二特徵之間形成其他特徵的實施例,因而該第一與第二特徵並非直接接觸。此外,本申請案可在不同範例中重複元件符號與/或字母。此重複係為了簡化與明確化之目的,而非說明不同實施例與/或所討論架構之間的關係。 The following disclosure provides many different embodiments or examples for implementing the various features of the present application. Specific examples of components and configurations are described below to simplify the disclosure of the present application. Of course, these are merely examples and are not intended to limit the application. For example, the following description of forming an initial feature on or over a second feature may include forming first and second features of direct contact, and may also include embodiments for forming other features between the first and second features. Thus, the first and second features are not in direct contact. Furthermore, the application may repeat the component symbols and/or letters in different examples. This repetition is for the purpose of simplification and clarification, and is not intended to illustrate the relationship between the various embodiments and/or the structures discussed.
再者,本申請案可使用空間相對用語,例如「之下」、「低於」、「較低」、「高於」、「較高」等類似用語之簡單說明,以描述圖式中一元件或特徵與另一元件或特徵的關係。空間相對用語係用以包括除了圖式中描述的元件位向之外,還有使用中或操作中之不同位向。元件還可被轉至其他位向(旋轉90度或是其他位向),並且可使用本揭露所使用的空間相對用語加以解釋。 Furthermore, this application may use spatially relative terms such as "below", "below", "lower", "higher", "higher" and the like to describe one of the patterns. The relationship of an element or feature to another element or feature. Spatial relative terms are used to include different orientations in use or in operation, in addition to the orientation of the components described in the drawings. The component can also be rotated to other orientations (rotated 90 degrees or other orientations) and can be interpreted using the spatial relative terms used in this disclosure.
根據本揭露的各種實施例,本揭露係提供用於晶圓級轉移成型製程的設備以及進行晶圓級轉移成型的方法。本揭露討論實施例的變化。在各種圖式與所說明的實施例中,相同的元件符號係用於代表相同的元件。 In accordance with various embodiments of the present disclosure, the present disclosure provides apparatus for wafer level transfer molding processes and methods of wafer level transfer molding. This disclosure discusses variations of the embodiments. In the various figures and illustrated embodiments, the same element symbols are used to represent the same elements.
圖1係根據本揭露的一些實施例說明晶圓級轉移成型製程的剖面圖。參閱圖1,在模套26中,設置封裝結構10。封裝結構10包含晶圓20與接合至晶圓20的晶粒22。在一些實施例中,晶圓20係元件晶圓,其包含複數個元件晶片,其包含主動元件(例如電晶體)於其中。元件晶圓20亦可包含被動元件於其中,例如電阻器、電容器、電感、與/或變壓器。晶圓20亦包含半導體基板(未繪示),例如矽基板、矽鍺基板、矽碳基板、或是III-V化合物半導體基板。在其他實施例中,晶圓20係中介晶圓(interposer wafer),其無主動元件於其中。在晶圓20係中介晶圓的實施例中,晶圓20亦可包含半導體基板。中介晶圓20可包含或可不包含被動元件於其中,例如電阻器、電容器、電感、與/或變壓器。晶圓20的俯視圖可為圓形,例如,如圖2所示,然而晶圓20亦可具有其他俯視形狀,例如矩形。元件晶粒22可包含主動元件於其中。根據一些實施例,元件晶粒22包含記憶體晶粒,例如靜態隨機存取記憶體(SRAM)晶粒、動態隨機存取記憶體(DRAM)晶粒、以及類似物。或者,晶粒22可為包含堆疊晶粒的封裝。 1 is a cross-sectional view illustrating a wafer level transfer molding process in accordance with some embodiments of the present disclosure. Referring to FIG. 1, in the mold sleeve 26, a package structure 10 is provided. The package structure 10 includes a wafer 20 and die 22 bonded to the wafer 20. In some embodiments, wafer 20 is a component wafer that includes a plurality of component wafers including active components (eg, transistors) therein. Component wafer 20 may also include passive components therein, such as resistors, capacitors, inductors, and/or transformers. The wafer 20 also includes a semiconductor substrate (not shown) such as a germanium substrate, a germanium substrate, a germanium carbon substrate, or a III-V compound semiconductor substrate. In other embodiments, wafer 20 is an interposer wafer with no active components therein. In an embodiment where the wafer 20 is an interposer wafer, the wafer 20 may also include a semiconductor substrate. The interposer wafer 20 may or may not include passive components therein, such as resistors, capacitors, inductors, and/or transformers. The top view of the wafer 20 can be circular, for example, as shown in FIG. 2, however the wafer 20 can have other topographic shapes, such as a rectangular shape. The component die 22 can include an active component therein. According to some embodiments, component die 22 includes memory die, such as static random access memory (SRAM) die, dynamic random access memory (DRAM) die, and the like. Alternatively, die 22 can be a package containing stacked dies.
模套26包含頂部(覆蓋物)26A,其由俯視圖視之可具有圓形形狀(圖2至9)。如圖1所示,由可撓材料所製成的釋放膜27係附接至模套26的內表面。晶粒22的頂部表面係與釋放膜27的底部表面接觸。據此,晶粒22的頂部表面上沒有空間。根據一些實施例,釋放膜27亦可延伸至模套26的內部側壁。另一方面,相鄰晶粒22之間的間隙保留未被釋放膜27填充。據此,在成型製程中,後續施加的模塑料流經相鄰晶粒22之間的間隙,並且可能流至晶粒22與下方晶圓20之間的間隙中,但不會流至晶粒22上方。由於晶粒22之間的間隙窄,因此不讓模塑料流至晶粒22上方,會形成窄的模塑料路徑。這增加成型製程的困難,因而根據本揭露的實施例使用圖4至10所示之方案,以確保有效且均勻的成型。 The die sleeve 26 includes a top (cover) 26A which may have a circular shape as seen from a top view (Figs. 2-9). As shown in FIG. 1, a release film 27 made of a flexible material is attached to the inner surface of the die sleeve 26. The top surface of the die 22 is in contact with the bottom surface of the release film 27. Accordingly, there is no space on the top surface of the die 22. According to some embodiments, the release film 27 may also extend to the inner sidewall of the die sleeve 26. On the other hand, the gap between adjacent crystal grains 22 remains unfilled by the release film 27. Accordingly, in the molding process, the subsequently applied molding compound flows through the gap between the adjacent crystal grains 22, and may flow into the gap between the crystal grains 22 and the lower wafer 20, but does not flow to the crystal grains. 22 above. Since the gap between the crystal grains 22 is narrow, the molding compound is prevented from flowing over the crystal grains 22, and a narrow molding material path is formed. This increases the difficulty of the molding process, and thus the schemes shown in Figures 4 to 10 are used in accordance with embodiments of the present disclosure to ensure efficient and uniform molding.
模套26進一步包含邊緣環26B(如圖2所示),其包圍晶粒22。邊緣環26B係連接至頂部26A的邊緣,並且從頂部26A的邊緣向下延伸。邊緣環26B係包圍頂部26A下方的區域,本文中,該區域係指模套26的內部空間。據此,晶粒22與釋放膜27係位在模套26的內部空間。模套26可由鋁、不鏽鋼、陶瓷、或類似物而形成。邊緣環26B的底端可接觸晶圓20之頂部表面,因而模套26的內部空間係密封的。 The die sleeve 26 further includes an edge ring 26B (shown in FIG. 2) that surrounds the die 22. Edge ring 26B is attached to the edge of top 26A and extends downwardly from the edge of top 26A. The edge ring 26B surrounds the area under the top portion 26A, which is referred to herein as the interior space of the mold sleeve 26. Accordingly, the die 22 and the release film 27 are tied to the inner space of the die sleeve 26. The die sleeve 26 may be formed of aluminum, stainless steel, ceramic, or the like. The bottom end of the edge ring 26B can contact the top surface of the wafer 20 such that the interior space of the mold sleeve 26 is sealed.
在一些實施例中,如圖1所示,在模套26下方設置模套126,其係下模套。模套26與126可結合使用,用於成型封裝10。在其他實施例中,未使用下模套126。根據本揭露的其他實施例,邊緣環26B的底部邊緣係設置在晶圓20的邊緣部分上。在這些實施例中,未使用下模套。 In some embodiments, as shown in FIG. 1, a die sleeve 126 is disposed beneath the die sleeve 26 that is attached to the die sleeve. Die sleeves 26 and 126 can be used in combination to form package 10. In other embodiments, the lower die sleeve 126 is not used. According to other embodiments of the present disclosure, the bottom edge of the edge ring 26B is disposed on an edge portion of the wafer 20. In these embodiments, the lower die sleeve is not used.
圖1進一步說明注入埠30與通氣孔32,其係在模套26的對側上。此外,注入埠30與通氣孔32係在邊緣環26B上,並且包含開口,其連接模套26之內部空間至模套26的外部空間。由於圖1係剖面圖,故僅繪示單一通氣孔32。然而,邊緣環26B上可設置複數個通氣孔32,如圖2至8所示。成型配送器40係連接至注入埠30,並且用於將模塑料(molding compound)46導至注入埠30。成型配送器40可包含儲存槽(未繪示),用於儲存模塑料46。 Figure 1 further illustrates the injection weir 30 and the vent 32 which are attached to the opposite side of the die sleeve 26. Further, the injection port 30 and the vent hole 32 are attached to the edge ring 26B, and include an opening that connects the inner space of the die sleeve 26 to the outer space of the die sleeve 26. Since FIG. 1 is a cross-sectional view, only a single vent 32 is shown. However, a plurality of venting holes 32 may be provided in the edge ring 26B as shown in FIGS. 2 to 8. The forming dispenser 40 is coupled to the injection cassette 30 and is used to direct a molding compound 46 to the injection cassette 30. The forming dispenser 40 can include a storage tank (not shown) for storing the molding compound 46.
圖2係說明模套26的概示圖。在一些實施例中,通氣孔32(包含32-1至32-m)具有一致的尺寸,其中該尺寸可為直徑或長度/寬度,取決於通氣孔32的形狀。例如,通氣孔32具有圓形開口或是八角形開口。在其他實施例中,通氣孔32具有不同的尺寸,以及通氣孔32的尺寸係與個別通氣孔32所在之位置相關。 FIG. 2 is a schematic view showing the die sleeve 26. In some embodiments, the vents 32 (including 32-1 to 32-m) have a uniform size, wherein the size can be diameter or length/width, depending on the shape of the vent 32. For example, the vent 32 has a circular opening or an octagonal opening. In other embodiments, the vents 32 have different sizes, and the size of the vents 32 is related to the location of the individual vents 32.
經由通氣孔32,可將模套26的內部空間抽真空。例如,可將管路52(圖4)連接至通氣孔32,經由管路52進行抽真空。或者,如圖1與圖3所示,整個模套26與相對的封裝結構10係設置在真空 環境36中,該真空環境可為腔室,因而所有通氣孔32係用於同時將模套26的內部空間抽真空。在有真空環境36的實施例中,沒有連接至個別通氣孔32的管。經由具有不同尺寸的通氣孔32,可將成型材料更均勻地施加在晶圓20上。 The inner space of the mold sleeve 26 can be evacuated via the vent holes 32. For example, line 52 (Fig. 4) can be coupled to vent 32 and evacuated via line 52. Alternatively, as shown in FIGS. 1 and 3, the entire mold sleeve 26 and the opposite package structure 10 are disposed in a vacuum. In the environment 36, the vacuum environment can be a chamber, and thus all of the vents 32 are used to simultaneously evacuate the interior space of the mold sleeve 26. In the embodiment with vacuum environment 36, there are no tubes connected to individual vents 32. The molding material can be more uniformly applied to the wafer 20 via the vent holes 32 having different sizes.
圖3係根據一些實施例說明模套26、晶圓20與晶粒22的俯視圖。如圖3所示,晶粒22將模套26的內部空間分為複數個水平與垂直方向的走道,其中在後續的成型製程中,模塑料流經這些走道以及晶粒22與晶圓20之間的間隙。注入埠30與通氣孔32-1可在邊緣環26B的對側上。可在邊緣環26B的直徑42上對稱設置通氣孔32,其中直徑42具有注入埠30作為其兩端之一。在一些實施例中,通氣孔32-1位於直徑42的另一端。在本揭露的其他實施例(未繪示)中,另一端無通氣孔32。相反地,兩個通氣孔係對稱於直徑42的另一端,並且比所有其他的通氣孔32更接近直徑42的另一端。 3 is a top plan view of the mold sleeve 26, the wafer 20, and the die 22, in accordance with some embodiments. As shown in FIG. 3, the die 22 divides the internal space of the die sleeve 26 into a plurality of horizontal and vertical walkways, wherein the molding compound flows through the walkways and the die 22 and the wafer 20 in a subsequent molding process. The gap between them. Injection pockets 30 and vents 32-1 can be on opposite sides of edge ring 26B. The venting opening 32 may be symmetrically disposed on the diameter 42 of the edge ring 26B, wherein the diameter 42 has an injection weir 30 as one of its ends. In some embodiments, the vent 32-1 is located at the other end of the diameter 42. In other embodiments (not shown) of the present disclosure, the other end has no venting opening 32. Conversely, the two vents are symmetrical about the other end of the diameter 42 and are closer to the other end of the diameter 42 than all other vents 32.
如圖3所示,通氣孔32係表示為32-1至32-m,其中m係序列號,其可為等於或大於2的整數。為求方便,通氣孔32可指通氣孔32-n,其中整數n係序列號,其範圍自1至m,如圖3所示。隨著序列號n增加,通氣孔32-n至注入埠30的距離減少。根據一些實施例,具有序列號(n+1)的各個通氣孔之尺寸/面積係等於或小於具有序列號n的通氣孔之尺寸/面積。通氣孔32-1至32-m具有越來越小的尺寸。例如,在一些實施例中,各個通氣孔32-(n+1)的尺寸/面積係大於所有通氣孔32-1至32-n的尺寸/面積。據此,在通氣孔32的所有尺寸中,通氣孔32-1可具有最大的尺寸W1。通氣孔32-m最接近注入埠30,其具有最小的尺寸Wm。在一些實施例中,W1/Wm比例係大於1,並且可大於約5。 As shown in FIG. 3, vent 32 is represented as 32-1 to 32-m, where m is a sequence number, which may be an integer equal to or greater than two. For convenience, vent 32 may refer to vent 32-n, where the integer n is a serial number ranging from 1 to m, as shown in FIG. As the serial number n increases, the distance from the vent 32-n to the injection enthalpy 30 decreases. According to some embodiments, the size/area of each vent having the serial number (n+1) is equal to or less than the size/area of the vent having the serial number n. The vent holes 32-1 to 32-m have smaller and smaller sizes. For example, in some embodiments, the size/area of each vent 32-(n+1) is greater than the size/area of all vents 32-1 through 32-n. Accordingly, among all the sizes of the vent holes 32, the vent holes 32-1 may have the largest dimension W1. The vent 32-m is closest to the injection weir 30, which has the smallest dimension Wm. In some embodiments, the W1/Wm ratio is greater than one and can be greater than about 5.
可理解的是,由於通氣孔32具有相同的環境36之壓力以及模套26的內部空間之相同壓力,因而通氣孔32的尺寸可與氣體的 流速直接相關。因此,隨著個別通氣孔32的序列號增加,通氣孔32-1至32-m可具有越來越小的氣體流速。再者,通氣孔32-1可具有最高流速,並且空氣孔32-m可具有最小流速。 It can be understood that since the vent hole 32 has the same pressure of the environment 36 and the same pressure of the inner space of the die sleeve 26, the size of the vent hole 32 can be compatible with the gas. The flow rate is directly related. Therefore, as the serial number of the individual vent holes 32 increases, the vent holes 32-1 to 32-m may have smaller and smaller gas flow rates. Again, the vent 32-1 can have the highest flow rate and the air holes 32-m can have a minimum flow rate.
在圖3的實施例中,通氣孔32可未直接連接至任何幫浦或閥,並且由真空環境36與模套26之內部空間的壓力差造成經由通氣孔32的通氣。另一方面,可經由幫浦44(圖1與3)將真空環境36抽真空。 In the embodiment of FIG. 3, the vent 32 may not be directly connected to any of the pumps or valves, and the pressure differential between the vacuum environment 36 and the interior space of the mold sleeve 26 causes aeration via the vent 32. Alternatively, the vacuum environment 36 can be evacuated via the pump 44 (Figs. 1 and 3).
根據一些實施例,例如,由於模套26係設置在環境36中且通氣孔32將模套26的內部空間連接至環境36,因而成型製程包含經由幫浦44將氣體/空氣抽出環境36。因此,當模塑料46(以箭號表示)注入模套26的內部空間中時,該內部空間的真空造成模塑料46被向前拉出並且填充晶粒22之間的間隙以及晶粒22與晶圓20之間的間隙。在這些實施例中,無幫浦或閥直接連接至通氣孔32。 According to some embodiments, for example, since the mold sleeve 26 is disposed in the environment 36 and the vent 32 connects the interior space of the mold sleeve 26 to the environment 36, the molding process includes pumping the gas/air out of the environment 36 via the pump 44. Therefore, when the molding compound 46 (indicated by an arrow) is injected into the inner space of the mold sleeve 26, the vacuum of the inner space causes the molding compound 46 to be pulled forward and fills the gap between the crystal grains 22 and the crystal grains 22 and The gap between the wafers 20. In these embodiments, no pump or valve is directly connected to the vent 32.
如圖3所示,在注入模塑料46的期間,由於通氣孔32具有不同尺寸,因而影響模塑料46的流動。例如,模注入埠30至通氣孔32-1的路徑係比其至任何其他通氣孔32更長。因此,相較於其他通氣孔32,通氣孔32-1的最大通氣尺寸有助於模塑料46更快流至通氣孔32-1。相較於所有通氣孔32具有相同尺寸,通氣孔32的設計使模塑料46得以均勻分布至模套26之內部空間的所有部分,因而模塑料46得以更同步的方式到達模套26的內部空間之所有部分。 As shown in FIG. 3, during the injection of the molding compound 46, since the vent holes 32 have different sizes, the flow of the molding compound 46 is affected. For example, the path of the mold injection 埠 30 to the vent 32-1 is longer than it is to any other vent 32. Therefore, the maximum venting size of the vent 32-1 facilitates faster flow of the molding compound 46 to the vent 32-1 than the other vents 32. The venting holes 32 are designed to allow the molding compound 46 to be evenly distributed to all portions of the inner space of the die sleeve 26, so that the molding compound 46 reaches the inner space of the die sleeve 26 in a more synchronized manner than all of the venting holes 32 having the same size. All parts.
圖4至9係根據其他實施例說明成型製程的中間階段與其設備的剖面圖。除非特別說明,否則在這些實施例中的材料以及組件之形成方法係與圖1至3所示之具有相同元件符號的相同組件實質相同。因此,關於圖4至9所示之製程與組件之材料的細節可參閱圖1至3所示之實施例的說明內容。 4 through 9 illustrate cross-sectional views of intermediate stages of the forming process and apparatus thereof, in accordance with other embodiments. The materials and the forming methods of the components in these embodiments are substantially the same as those of the same components having the same component symbols as those shown in FIGS. 1 to 3 unless otherwise specified. Therefore, details regarding the materials of the processes and components shown in FIGS. 4 to 9 can be referred to the description of the embodiments shown in FIGS. 1 to 3.
圖4係根據其他實施例說明模套26、晶圓20與晶粒22 的俯視圖。在這些實施例中,並非經由共同分享的環境36而通氣(如圖3所示),而是以48-1至48-m所代表之複數個閥48連接至個別的通氣孔32-1至32-m。在一些實施例中,通氣孔32-1至32-m具有相同的尺寸/面積。在其他實施例中,通氣孔32-1至32-m可具有不同的尺寸與面積,並且隨著序列號增加,個別的通氣孔32可具有越來越小的尺寸。 4 illustrates a mold sleeve 26, wafer 20, and die 22 in accordance with other embodiments. Top view. In these embodiments, instead of venting via a shared environment 36 (as shown in FIG. 3), a plurality of valves 48, represented by 48-1 to 48-m, are coupled to the individual vents 32-1 to 32-m. In some embodiments, the vents 32-1 through 32-m have the same size/area. In other embodiments, the vents 32-1 through 32-m can have different sizes and areas, and as the serial number increases, the individual vents 32 can have smaller and smaller dimensions.
根據本揭露的實施例,通氣孔32係經由個自的閥48與管路52而連接至腔室50,該些管路52係以線段表示。例如,腔室50係經由幫浦44而抽真空。據此,腔室50具有低壓,例如低於約10torr。該些閥48係有差異地開啟以具有不同的開口尺寸,因而流經不同閥48的氣流有差異。根據一些實施例,隨著序列號的增加,其個自的閥48-1至48-m的開口(或孔洞、或是開口的直徑)越來越小。換言之,隨著序列號的增加,其個自閥48-1至48-m的流速越來越小。 In accordance with an embodiment of the present disclosure, vent 32 is coupled to chamber 50 via a valve 48 and line 52, the lines 52 being indicated by line segments. For example, chamber 50 is evacuated via pump 44. Accordingly, chamber 50 has a low pressure, such as less than about 10 torr. The valves 48 are differentially opened to have different opening sizes, and thus the flow of air through the different valves 48 is different. According to some embodiments, as the serial number increases, the opening (or the diameter of the hole, or opening) of the valves 48-1 to 48-m thereof becomes smaller and smaller. In other words, as the serial number increases, the flow rate from the valves 48-1 to 48-m becomes smaller and smaller.
由於閥48-1至48-m的不同流速,往通氣孔32-1拉出模塑料46的速度係大於往其他通氣孔拉出模塑料46的速度。再者,從通氣孔32-1至通氣孔32-m,模塑料46的流速越來越小,以補償從個自通氣孔32至注入埠30之越來越短的距離。因此,模塑料46可同時填充至模套26之內部空間的不同部分。 Due to the different flow rates of the valves 48-1 to 48-m, the speed at which the molding compound 46 is pulled out toward the vent 32-1 is greater than the speed at which the molding compound 46 is pulled out to the other vents. Furthermore, from the vent 32-1 to the vent 32-m, the flow rate of the molding compound 46 is getting smaller and smaller to compensate for the shorter and shorter distance from the vent 32 to the injection ram 30. Therefore, the molding compound 46 can be simultaneously filled into different portions of the inner space of the die sleeve 26.
圖5至9係根據其他實施例說明對封裝結構10進行成型的中間階段之俯視圖。參閱圖5,以48-1至48-m所表示的複數個閥48係連接至個別通氣孔32-1至32-n。通氣孔32-1至32-m可具有相同尺寸,或是具有彼此不同的尺寸。複數個通氣孔32係經由閥48-1至48-m而連接至真空腔室50。閥48亦連接至控制器54,並且受到控制器54的控制,控制器54係用於控制每一個閥48在理想的時間點開啟與關閉。從控制器54至閥48的電性連接係如56所示。 5 through 9 illustrate top views of intermediate stages of forming package structure 10 in accordance with other embodiments. Referring to Figure 5, a plurality of valves 48, indicated at 48-1 through 48-m, are coupled to individual vents 32-1 through 32-n. The vent holes 32-1 to 32-m may have the same size or have different sizes from each other. A plurality of vents 32 are connected to the vacuum chamber 50 via valves 48-1 through 48-m. Valve 48 is also coupled to controller 54 and is controlled by controller 54 which is used to control each valve 48 to open and close at a desired point in time. The electrical connections from controller 54 to valve 48 are as shown at 56.
參閱圖5,模塑料46係注入至模套26中。在第一時間點T1,閥48-1開啟,因而空氣經由閥48-1通氣,如閥48-1上的箭號所 示。所有其他的閥48-2至48-m仍保持關閉。時間點T1可為模塑料46開始注入至模套26的相同時間點。或者,時間點T1在模塑料46開始注入至模套26的時間點之前或之後。據此,如圖5所示,模塑料46主要流入箭號46-1所標註之單一方向,其係平行於從注入埠30至通氣孔32-1的方向。此時,流至通氣孔32-1之外的通氣孔的模塑料46流量為最少。 Referring to Figure 5, a molding compound 46 is injected into the mold sleeve 26. At the first time point T1, the valve 48-1 is opened, and thus the air is vented via the valve 48-1, such as the arrow on the valve 48-1. Show. All other valves 48-2 to 48-m remain closed. The time point T1 can be the same point in time at which the molding compound 46 begins to be injected into the mold sleeve 26. Alternatively, the time point T1 is before or after the point in time at which the molding compound 46 starts to be injected into the die sleeve 26. Accordingly, as shown in FIG. 5, the molding compound 46 mainly flows in a single direction indicated by the arrow 46-1, which is parallel to the direction from the injection port 30 to the vent hole 32-1. At this time, the flow rate of the molding compound 46 flowing to the vent holes other than the vent holes 32-1 is the smallest.
參閱圖6,在第二時間點T2,其係在第一時間點T1之後,閥48-2開啟。閥48-1保持開啟,因而空氣同時經由閥48-1與48-2通氣,如閥48-1與48-2上之箭號所指。可控制閥48-1與48-2,而使通氣孔32-1的流速等於、大於或小於通氣孔32-2的流速。所有其他的閥48-3至48-m係保持關閉。據此,如圖6所示,模塑料46主要流入箭號46-1與46-2所標示之方向。此時,流至通氣孔32-1與31-2之外的通氣孔之模塑料46流量為最少。影響時間點T1與T2之間時間差的各種因子係包含但不限於模塑料46的黏性、晶粒22之間的間隙尺寸、閥48的尺寸、以及幫浦44的功率。 Referring to Figure 6, at a second time point T2, which is after the first time point T1, valve 48-2 is open. Valve 48-1 remains open so that air is simultaneously vented via valves 48-1 and 48-2, as indicated by the arrows on valves 48-1 and 48-2. Valves 48-1 and 48-2 can be controlled such that the flow rate of vent 32-1 is equal to, greater than, or less than the flow rate of vent 32-2. All other valves 48-3 to 48-m remain closed. Accordingly, as shown in Fig. 6, the molding compound 46 mainly flows into the directions indicated by the arrows 46-1 and 46-2. At this time, the flow rate of the molding compound 46 flowing to the vent holes other than the vent holes 32-1 and 31-2 is the smallest. The various factors that affect the time difference between time points T1 and T2 include, but are not limited to, the viscosity of the molding compound 46, the size of the gap between the grains 22, the size of the valve 48, and the power of the pump 44.
接著,如圖7所示,在第三時間點T3,其係在第二時間點T2之後,閥48-3開啟。閥48-1與48-2保持開啟,因而空氣經由閥48-1、48-2與48-3通氣,如閥48-1、48-2與48-3上之箭號所顯示。可控制閥48-1、48-2與48-3,而使通氣孔32-1的流速等於、大於或小於通氣孔32-2與/或32-3的流速。除了閥48-1、48-2與48-3之外的所有其他閥48係保持關閉。據此,如圖7所示,模塑料46主要流入箭號46-1、46-2與46-3所標示之方向。此時,流至通氣孔32-1、32-2與32-3之外的通氣孔32的模塑料46流量為最少。影響時間點T2與T3之間時間差的各種因子係包含(但不限於)模塑料46的黏性、晶粒22之間的間隙尺寸、閥48的尺寸、以及幫浦44的功率。因此,可經由實驗找到最佳的時間差(T3-T2)。 Next, as shown in Fig. 7, at the third time point T3, after the second time point T2, the valve 48-3 is opened. Valves 48-1 and 48-2 remain open, so air is vented via valves 48-1, 48-2 and 48-3, as indicated by the arrows on valves 48-1, 48-2 and 48-3. Valves 48-1, 48-2 and 48-3 can be controlled such that the flow rate of vent 32-1 is equal to, greater than, or less than the flow rate of vent 32-2 and/or 32-3. All other valves 48 except valves 48-1, 48-2 and 48-3 remain closed. Accordingly, as shown in Fig. 7, the molding compound 46 mainly flows into the directions indicated by the arrows 46-1, 46-2, and 46-3. At this time, the flow rate of the molding compound 46 flowing to the vent holes 32 other than the vent holes 32-1, 32-2 and 32-3 is the smallest. The various factors that affect the time difference between time points T2 and T3 include, but are not limited to, the viscosity of the molding compound 46, the gap size between the grains 22, the size of the valve 48, and the power of the pump 44. Therefore, the best time difference (T3-T2) can be found experimentally.
在後續步驟中,依序開啟閥48-4至48-m,各個閥48係在序列號較小的閥之開啟時間之後開啟。例如,參閱圖8,在時間點T4,其係在時間點T3之後,閥48-4開啟。當閥48-m開啟時,持續依序開啟閥48直到時間點Tm,如圖9所示。此時,模塑料46可未完全填充模套26的內部空間。在時間點Tm之後,所有閥48-1至48-m保持開啟,並且持續注入模塑料46,直到模塑料46完全填滿模套26(可能包含晶粒22與晶圓20之間的間隙)。 In a subsequent step, valves 48-4 through 48-m are sequentially opened, and each valve 48 is opened after the opening time of the valve having the smaller serial number. For example, referring to Fig. 8, at time point T4, which is after time point T3, valve 48-4 is opened. When the valve 48-m is opened, the valve 48 is continuously opened until the time point Tm, as shown in FIG. At this time, the molding compound 46 may not completely fill the internal space of the mold sleeve 26. After time point Tm, all of the valves 48-1 through 48-m remain open and the molding compound 46 continues to be injected until the molding compound 46 completely fills the mold sleeve 26 (possibly including the gap between the die 22 and the wafer 20) .
各個時間點T2至Tm的遲滯相對於其超前的時間點係受控於控制器54,其中可經由實驗找到最佳的時間點T1至Tm,並且只要成型的封裝結構以及模塑料的型式保持不變,即可用於相同形式的產品。 The hysteresis of each time point T2 to Tm is controlled by the controller 54 with respect to its advanced time point, wherein the optimum time points T1 to Tm can be found experimentally, and as long as the formed package structure and the type of the molding compound remain unchanged Change, you can use the same form of product.
圖10係根據本揭露的其他實施例說明設備的剖面圖。在這些實施例中,注入埠30並未設置於模套26的側邊上,而是設置在模套26的頂部26上。通氣孔32係分布在邊緣環26B上,並且可均勻分布,因而通氣孔32彼此具有一致的間距。再者,在這些實施例中,釋放膜27接觸晶粒22的頂部表面,因而模塑料流經晶粒22之間的間隙以及晶粒22與晶圓20之間的間隙,但未流至晶粒22上方。 Figure 10 is a cross-sectional view illustrating the apparatus in accordance with other embodiments of the present disclosure. In these embodiments, the injection pockets 30 are not disposed on the sides of the mold sleeve 26, but rather on the top 26 of the mold sleeve 26. The vent holes 32 are distributed on the edge ring 26B and are evenly distributed, so that the vent holes 32 have a uniform spacing from each other. Moreover, in these embodiments, the release film 27 contacts the top surface of the die 22 such that the molding compound flows through the gap between the die 22 and the gap between the die 22 and the wafer 20, but does not flow to the crystal. Above the grain 22.
如圖10所示,為了使模塑料46導入模套26中,晶圓20中的中心晶片20’未與上方晶粒22接合,因而有空間供模塑料導入模套26中。再者,模套26可設置在真空環境36中,其係連接至幫浦44,用於將真空環境36抽真空。 As shown in Fig. 10, in order to introduce the molding compound 46 into the mold sleeve 26, the center wafer 20' in the wafer 20 is not joined to the upper die 22, so that a space for molding the plastic is introduced into the mold sleeve 26. Further, the die sleeve 26 can be disposed in a vacuum environment 36 that is coupled to the pump 44 for evacuating the vacuum environment 36.
圖11係說明圖10所示之設備的俯視圖。在一些實施例中,模套26的俯視形狀係類似於晶圓20的俯視形狀。模套26的頂部可為圓形,並且具有中心38,其亦可實質對準晶圓20的中心。此外,模套26可包括以30-1至30-n表示的多個注入埠,其中整數n可為任何合適的數目。在本揭露的說明中,較接近中心38的注入埠30係指內埠, 而較遠離中心38的注入埠30係指外埠。可理解「內」與「外」之詞係彼此相對的。例如,相較於注入埠30-1,注入埠30-2為外埠,而相較於注入埠30-3,注入埠30-2為內埠。注入埠30-1係最接近中心,因而在本文中係指中心埠30-1。注入埠30-n係最接近模套26的邊緣,因而在本文中係指邊緣埠。 Figure 11 is a plan view showing the apparatus shown in Figure 10. In some embodiments, the top shape of the die sleeve 26 is similar to the top view shape of the wafer 20. The top of the die sleeve 26 can be circular and have a center 38 that can also be substantially aligned with the center of the wafer 20. Additionally, the die sleeve 26 can include a plurality of injection turns represented by 30-1 through 30-n, where the integer n can be any suitable number. In the description of the present disclosure, the injection 埠 30 closer to the center 38 refers to the internal hemorrhoid. The injection 埠30, which is farther away from the center 38, refers to the external hemorrhoid. It can be understood that the words "inside" and "outside" are relative to each other. For example, the injection crucible 30-2 is an outer crucible compared to the injection crucible 30-1, and the injecting crucible 30-2 is an inner crucible as compared to the injection crucible 30-3. The injection enthalpy 30-1 is closest to the center and thus refers herein to the center 埠 30-1. The implanted 埠 30-n is closest to the edge of the die sleeve 26 and thus refers herein to the edge 埠.
在一些實施例中,注入埠30係實質對準直線31,其係與圓形模套26的頂部26A之中心交叉。將模塑料46(圖10)經由複數個注入埠30注入模套26中,模塑料46流至模套26的邊緣。在一些實施例中,中心埠30-1的尺寸W1’可為直徑或是長度/寬度,其係大於邊緣埠30-n的尺寸Wn’。W1’/Wn’可大於1,並且亦可大於約5。注入埠30-1至30-n亦可有越來越小的尺寸,各個外埠的尺寸可小於其內埠。據此,經由注入埠30所注入較接近模套26邊緣的的模塑料46,比起經由注入埠30所注入接近中心38的模塑料46更多。相較於經由邊緣埠30-n所注入的部分模塑料46,經由中心埠30-1所注入的部分模塑料46需要移動較長的距離(並且填充較大的空間)。據此,藉由設計具有不同尺寸的注入埠30,經由不同注入埠30所注入的模塑料46部分可實質同時(以圖11所示之箭號方向)流至模套26的邊緣。因此,模塑料46形成空隙的可能性就降低了。 In some embodiments, the injection cassette 30 is substantially aligned with the line 31 that intersects the center of the top 26A of the circular die sleeve 26. Molding compound 46 (Fig. 10) is injected into mold sleeve 26 via a plurality of injection rams 30 which flow to the edges of mold sleeve 26. In some embodiments, the dimension W1' of the center turn 30-1 can be a diameter or a length/width that is greater than the dimension Wn' of the edge turns 30-n. W1'/Wn' may be greater than 1, and may also be greater than about 5. The injection turns 30-1 to 30-n may also have smaller and smaller dimensions, and each outer turn may be smaller in size than the inner turn. Accordingly, the molding compound 46 injected through the injection crucible 30 closer to the edge of the mold sleeve 26 is more than the molding compound 46 injected into the center 38 via the injection crucible 30. The portion of the molding compound 46 injected through the center weir 30-1 needs to be moved a long distance (and filled with a larger space) than the portion of the molding compound 46 injected through the edge weir 30-n. Accordingly, by designing the injection crucibles 30 having different sizes, portions of the molding compound 46 injected through the different injection crucibles 30 can flow to the edges of the mold sleeve 26 substantially simultaneously (in the direction of the arrow shown in FIG. 11). Therefore, the possibility that the molding compound 46 forms a void is lowered.
在一些例示實施例中,可同時經由埠30注入模塑料46。在其他實施例中,在不同時間,從不同注入埠30注入模塑料46。在一些例示實施例中,中心埠30-1先開始注入模塑料46,而其他注入埠30比其相對內埠延遲注入。在所有內注入埠30已經開始注入之後的一時間,邊緣埠30-n可開始注入。在一些例示實施例中,邊緣埠30-n之開始注入之時間比中心埠30-1開始注入之時間延遲大於約70秒。 In some exemplary embodiments, the molding compound 46 may be simultaneously injected via the crucible 30. In other embodiments, the molding compound 46 is injected from different injection ports 30 at different times. In some exemplary embodiments, the center turn 30-1 begins to inject molding compound 46 while the other injection ports 30 are delayed in injection relative to their inner bores. At a time after all of the implants 30 have begun to be implanted, the edge turns 30-n can begin to implant. In some exemplary embodiments, the time at which the edge 埠 30-n begins to implant is greater than the time delay at which the center 埠 30-1 begins to implant is greater than about 70 seconds.
圖10與11亦係說明成型配送器40,其係連接注入埠30,並且用於將模塑料46導入至注入埠30。成型配送器40包含控制器 41,其係用於控制經由不同注入埠30之注入時間。 10 and 11 also illustrate a forming dispenser 40 that is coupled to the injection bowl 30 and that is used to introduce the molding compound 46 to the injection bowl 30. Forming dispenser 40 includes a controller 41, which is used to control the injection time via different injection ports 30.
圖12係說明圖10與11所示之結構的概示圖。在一些實施例中,通氣孔32(包含32-1至32-m)具有一致尺寸,其中尺寸可為直徑或是長度/寬度,取決於通氣孔32的形狀。在其他實施例中,通氣孔32依個別通氣孔32所在之位置具有不同的尺寸。例如,通氣孔32-1與注入埠30距離最遠,也與注入埠30所對準的直線31距離最遠。在通氣孔32的所有尺寸中,通氣孔32-1可具有最大尺寸W1。最接近注入埠30與直線31的通氣孔32-m可具有最小的尺寸Wm。通氣孔32-1至32-m具有越來越小的尺寸。在一些實施例中,W1/Wm的比例可大於1,或是大於約5。經由通氣孔32,可將模套26的內部空間抽真空。例如,管路(未繪示)可連接至通氣孔32,並且可經由該管路進行抽真空。或者,如圖10所示,整個模套26可設置在真空的環境36中,因而所有通氣孔32係用於同時將模套26的內部空間抽真空。在具有真空環境36的實施例中,不需要連接至個別通氣孔32的管路。藉由不同尺寸的通氣孔32,可更均勻配送模塑料46於整個晶圓20。 Figure 12 is a schematic view showing the structure shown in Figures 10 and 11. In some embodiments, the vents 32 (including 32-1 to 32-m) have a uniform size, wherein the dimensions may be diameter or length/width, depending on the shape of the vent 32. In other embodiments, the vents 32 have different sizes depending on where the individual vents 32 are located. For example, the vent 32-1 is the farthest from the injection weir 30 and also the farthest from the line 31 aligned with the injection weir 30. Among all the sizes of the vent holes 32, the vent holes 32-1 may have a maximum size W1. The vent 32-m closest to the injection port 30 and the straight line 31 may have the smallest dimension Wm. The vent holes 32-1 to 32-m have smaller and smaller sizes. In some embodiments, the ratio of W1/Wm can be greater than one or greater than about 5. The inner space of the mold sleeve 26 can be evacuated via the vent holes 32. For example, a conduit (not shown) can be coupled to the vent 32 and can be evacuated via the conduit. Alternatively, as shown in FIG. 10, the entire mold sleeve 26 can be disposed in a vacuum environment 36 such that all of the vents 32 are used to simultaneously evacuate the interior space of the mold sleeve 26. In embodiments having a vacuum environment 36, no tubing connected to the individual vents 32 is required. The molding compound 46 can be more evenly distributed over the entire wafer 20 by the vent holes 32 of different sizes.
圖13與14係根據其他實施例分別說明用於晶圓級成型的設備俯視圖與概示圖。除非特別說明,否則這些實施例中的材料與製程係與圖10至12所示之實施例中相同元件符號所指之相同元件實質相同。圖13與14所示之實施例的細節係如圖10至12所示之實施例的討論內容。參閱圖13,複數個注入埠30-1至30-m可分佈於且對準直線31與33,其係彼此垂直。直線31與33可皆通過模套26的中心38。同理於圖10至12的實施例,較接近中心38的注入埠30之尺寸可大於較遠離中心38的注入埠30之尺寸。再者,經由注入埠30注入模塑料46可比經由其相對外注入埠30注入模塑料46提早進行。 13 and 14 illustrate top and bottom views, respectively, of a device for wafer level forming, in accordance with other embodiments. Unless otherwise stated, the materials and processes in the embodiments are substantially the same as those in the embodiment shown in FIGS. 10 to 12. The details of the embodiment shown in Figures 13 and 14 are discussed in the embodiments of Figures 10 through 12. Referring to Figure 13, a plurality of implants 30-1 through 30-m may be distributed and aligned with lines 31 and 33, which are perpendicular to each other. Both lines 31 and 33 can pass through the center 38 of the die sleeve 26. By the same embodiment of Figures 10 through 12, the size of the injection weir 30 closer to the center 38 can be greater than the size of the injection weir 30 that is further from the center 38. Furthermore, injection of the molding compound 46 via the injection port 30 can be performed earlier than injection of the molding compound 46 via the opposite outer injection port 30.
圖14係說明圖13之設備的概示圖。在一些實施例中,通氣孔32具有一致尺寸。在其他實施例中,通氣孔32具有不同尺寸。 例如,與注入埠30及直線31與33相距最遠的通氣孔32-1可具有最大尺寸,而與注入埠30及直線31與33相距最近的通氣孔32-m可具有最小尺寸。 Figure 14 is a schematic diagram showing the apparatus of Figure 13; In some embodiments, the vents 32 have a uniform size. In other embodiments, the vents 32 have different sizes. For example, the vent 32 - 1 that is furthest from the injection 埠 30 and the straight lines 31 and 33 may have the largest size, and the vent 32 - m closest to the injection 埠 30 and the straight lines 31 and 33 may have the smallest size.
在圖3、4、9或10中所示的注入步驟發生之後,模塑料46完全填滿模套26的內部空間。接著,進行硬化製程,以固化模塑料46。依模塑料46的形式,可經由紫外光(UV)硬化、熱硬化、紅外線硬化、或類似方法,進行硬化。在硬化之後,自模套26取出成型的封裝結構10。在所得的結構中,如圖15所示,模塑料46填充晶粒22之間的間隙並且可能填充晶粒22與晶圓20之間的間隙。晶粒22的頂部表面暴露,模塑料並未覆蓋晶粒22。 After the injection step shown in Figures 3, 4, 9 or 10 occurs, the molding compound 46 completely fills the interior space of the mold sleeve 26. Next, a hardening process is performed to cure the molding compound 46. In the form of a molded plastic 46, it can be hardened by ultraviolet (UV) hardening, thermal hardening, infrared hardening, or the like. After hardening, the formed package structure 10 is removed from the mold sleeve 26. In the resulting structure, as shown in FIG. 15, the molding compound 46 fills the gap between the grains 22 and may fill the gap between the die 22 and the wafer 20. The top surface of the die 22 is exposed and the molding compound does not cover the die 22.
圖16與17係根據其他實施例說明將封裝結構10進行接合。在這些實施例中,晶粒22係待接合而成為複合晶圓。晶粒22係附貼至晶圓20,其係這些實施例中的載體。載體20可為矽載體或是非半導體載體,例如玻璃載體或是陶瓷載體。當晶圓20為矽晶圓時,其亦可為無電路形成於其中的空白載體。黏著劑23將晶粒22貼附至載體20。 16 and 17 illustrate the joining of the package structure 10 in accordance with other embodiments. In these embodiments, the die 22 is to be bonded to form a composite wafer. The die 22 is attached to the wafer 20, which is the carrier in these embodiments. The carrier 20 can be a tantalum carrier or a non-semiconductor carrier such as a glass carrier or a ceramic carrier. When the wafer 20 is a germanium wafer, it may also be a blank carrier in which no circuit is formed. Adhesive 23 attaches die 22 to carrier 20.
在圖16中,封裝結構10係設置在模套26的內部空間中,晶粒22係面朝上並且接觸釋放膜27。晶粒22包含面向釋放膜27的主動表面組件24。表面組件24可包含金屬墊、金屬柱、焊區、重佈線、與/或類似物,其可暴露且接觸釋放膜27。接著,使用圖2至9所示之實質相同的方法,進行成型製程。在成型製程之後,移除釋放膜27與模套26。 In FIG. 16, the package structure 10 is disposed in the inner space of the die sleeve 26 with the die 22 facing upward and contacting the release film 27. The die 22 includes an active surface assembly 24 that faces the release film 27. Surface component 24 can include a metal pad, a metal post, a pad, a redistribution, and/or the like that can expose and contact release film 27. Next, the molding process is carried out using substantially the same method as shown in FIGS. 2 to 9. After the molding process, the release film 27 and the mold sleeve 26 are removed.
圖17係說明所得的複合晶圓,其包含封裝結構10與模塑料46。在所得的複合晶圓中,晶粒22具有暴露的主動組件。據此,在複合晶圓上,可進行其他製程步驟,例如形成扇出重佈線(未繪示)。 Figure 17 illustrates the resulting composite wafer comprising package structure 10 and molding compound 46. In the resulting composite wafer, die 22 has exposed active components. Accordingly, on the composite wafer, other process steps can be performed, such as forming fan-out rewiring (not shown).
本揭露的實施例具有一些有利的特徵。在本揭露的實施例中,使用轉移成型方法,以釋放膜接觸成型的封裝結構的晶粒之頂部表面。在所得的成型封裝中,元件晶粒的頂部表面係暴露的,而不需要進行研磨製程以暴露元件晶粒22的頂部表面。此外,模塑料填充晶粒22與晶圓20之間的間隙,因而不需要其他的底膠填充步驟。模塑料均勻填充模套,因而改良成型製程的效率。 The disclosed embodiments have some advantageous features. In an embodiment of the present disclosure, a transfer molding process is used to release the top surface of the die of the film contact molded package structure. In the resulting molded package, the top surface of the die of the component is exposed without the need for a polishing process to expose the top surface of the die 22 . In addition, the molding compound fills the gap between the die 22 and the wafer 20, thus eliminating the need for additional underfill filling steps. The molding compound uniformly fills the mold sleeve, thereby improving the efficiency of the molding process.
根據本揭露的一些實施例,方法包含將封裝結構設置在模套中,封裝結構中的元件晶粒之頂部表面係接觸模套中的釋放膜。將模塑料經由注入埠注入模套的內部空間中,該注入埠係在模套的一側上。在注入模塑料的過程中,經由模套的第一通氣孔與第二通氣孔進行通氣步驟。第一通氣孔具有第一流速,以及第二通氣孔具有不同於第一流速的第二流速。 In accordance with some embodiments of the present disclosure, a method includes disposing a package structure in a mold sleeve, the top surface of the component die in the package structure contacting the release film in the mold sleeve. The molding compound is injected into the inner space of the mold sleeve through the injection crucible, which is attached to one side of the mold sleeve. In the process of injecting the molding compound, the venting step is performed through the first vent hole and the second vent hole of the die sleeve. The first vent has a first flow rate and the second vent has a second flow rate different than the first flow rate.
根據本揭露的其他實施例,方法包含將封裝結構設置模套的內部空間,封裝結構中的元件晶粒之頂部表面係接觸模套中的釋放膜。模套包含注入埠,以及具有不同尺寸的第一通氣孔與第二通氣孔。方法進一步包含將封裝結構與模套設置在腔室中,其中第一通氣孔與第二通氣孔各自將內部空間互連至模套外的一部分腔室。腔室係真空的。將模塑料經由注入埠而注入至模套的內部空間中。 In accordance with other embodiments of the present disclosure, a method includes disposing a package structure into an interior space of a mold sleeve, the top surface of the component die in the package structure contacting a release film in the mold sleeve. The mold sleeve includes an injection port, and a first vent hole and a second vent hole having different sizes. The method further includes disposing the package structure and the mold sleeve in the chamber, wherein the first venting aperture and the second venting aperture each interconnect the interior space to a portion of the chamber outside the mold sleeve. The chamber is vacuumed. The molding compound is injected into the inner space of the mold sleeve through the injection crucible.
根據本揭露的其他實施例,模套包含頂部,以及具有環形的邊緣環,其中邊緣環係在下方並且連接至頂部的邊緣。邊緣環包圍頂部下的內部空間。注入埠係連接至模套的內部空間。第一通氣孔與第二通氣孔係在邊緣環,其中第一通氣孔具有第一尺寸,以及第二通氣孔具有不同於第一尺寸的第二尺寸。 According to other embodiments of the present disclosure, the mold sleeve includes a top portion and an edge ring having an annular shape with the edge ring attached below and attached to the edge of the top portion. The edge ring encloses the inner space below the top. The injection tether is connected to the inner space of the mold sleeve. The first vent and the second vent are tied to the edge ring, wherein the first vent has a first size and the second vent has a second size different from the first size.
根據實施例,模套包含頂部,以及具有環形的邊緣環。邊緣環係下方並且連接至頂部的邊緣。邊緣環包含通氣孔。邊緣環進一步包圍模套之頂部下方的內部空間。複數個注入埠係連接至模 套的內部空間。複數個注入埠係實質對準通過模套的頂部之中心的直線。複數個注入埠具有不同尺寸。 According to an embodiment, the die sleeve comprises a top portion and an edge ring having an annular shape. Below the edge ring and attached to the edge of the top. The edge ring contains a vent. The edge ring further surrounds the interior space below the top of the mold sleeve. Multiple injection tethers connected to the mold Set of interior spaces. A plurality of injection tethers are substantially aligned with a line passing through the center of the top of the die set. A plurality of injection ports have different sizes.
根據其他實施例,模套係包含具有圓形邊緣的頂部,以及連接至頂部之圓形邊緣的邊緣環。模套的頂部與邊緣環係定義其中的內部空間。複數個通氣孔係穿過模套的邊緣環,其中複數個通氣孔具有不同的尺寸。中心注入埠係穿過模套的頂部並且連接至模套的內部空間。中心注入埠係實質對準模套的頂部之中心。 According to other embodiments, the die set includes a top having a rounded edge and an edge ring attached to the rounded edge of the top. The top and edge loops of the sleeve define the internal space. A plurality of venting holes pass through the edge ring of the die sleeve, wherein the plurality of venting holes have different sizes. The center injection tether is passed through the top of the mold sleeve and connected to the inner space of the mold sleeve. The center injecting the tether is substantially aligned with the center of the top of the die.
根據其他實施例,方法包含提供模套,其包含頂部以及在頂部下方且連接至頂部的邊緣環。邊緣環包圍在頂部下方的內部空間。將封裝結構設置在內部空間中。封裝結構包含晶圓,以及接合至晶圓的複數個晶粒。在第一時間,成型材料開始從第一注入埠注入內部空間,該第一注入埠係穿過模套的頂部。在第一時間之後的第二時間,成型材料開始從第二注入埠注入內部空間,該第二注入埠係穿過模套的頂部。相較於第一注入埠,第二注入埠係較遠離模套之頂部的中心。 According to other embodiments, a method includes providing a mold sleeve including a top and an edge ring that is below the top and connected to the top. The edge ring encloses the interior space below the top. Set the package structure in the internal space. The package structure includes a wafer and a plurality of dies bonded to the wafer. At the first time, the molding material begins to be injected into the interior space from the first injection port, which passes through the top of the mold sleeve. At a second time after the first time, the molding material begins to be injected into the interior space from the second injection crucible, which passes through the top of the mold sleeve. The second injection raft is relatively farther from the center of the top of the mold sleeve than the first injection enthalpy.
前述說明概述一些實施例的特徵,因而該技藝之技術人士可更加理解本揭露的各方面。該技藝的技術人士應理解其可輕易使用本揭露作為設計或修飾其他製程與結構的基礎,而產生與本申請案相同之目的以及/或達到相同優點。該技藝之技術人士亦應理解此均等架構並不脫離本揭露的精神與範圍,並且其可進行各種改變、取代與變化而不脫離本揭露的精神與範圍。 The foregoing description summarizes the features of some embodiments, and those skilled in the art can understand the aspects of the disclosure. Those skilled in the art will appreciate that the present disclosure can be readily utilized as a basis for designing or modifying other processes and structures to achieve the same objectives and/or the same advantages as the present application. It should be understood by those skilled in the art that the present invention is not limited to the spirit and scope of the disclosure, and various changes, substitutions and changes can be made without departing from the spirit and scope of the disclosure.
10‧‧‧封裝結構 10‧‧‧Package structure
20‧‧‧晶圓 20‧‧‧ wafer
22‧‧‧晶粒 22‧‧‧ Grain
26‧‧‧模套 26‧‧‧ mold sets
26A‧‧‧頂部 26A‧‧‧ top
26B‧‧‧邊緣環 26B‧‧‧Edge ring
27‧‧‧釋放膜 27‧‧‧ release film
126‧‧‧模套 126‧‧‧ mold sets
30‧‧‧注入埠 30‧‧‧Injection
32‧‧‧通氣孔 32‧‧‧Ventinel
40‧‧‧配送器 40‧‧‧Distributor
36‧‧‧真空環境 36‧‧‧vacuum environment
44‧‧‧幫浦 44‧‧‧
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US14/302,728 US9802349B2 (en) | 2012-03-02 | 2014-06-12 | Wafer level transfer molding and apparatus for performing the same |
US14/599,815 US9893044B2 (en) | 2012-03-02 | 2015-01-19 | Wafer-level underfill and over-molding |
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US3108339A (en) * | 1959-05-20 | 1963-10-29 | Harry R Bucy | Die casting mold breather |
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US6245595B1 (en) * | 1999-07-22 | 2001-06-12 | National Semiconductor Corporation | Techniques for wafer level molding of underfill encapsulant |
US6770236B2 (en) | 2000-08-22 | 2004-08-03 | Apic Yamada Corp. | Method of resin molding |
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