TW201616687A - 覆晶式led封裝體 - Google Patents
覆晶式led封裝體 Download PDFInfo
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- TW201616687A TW201616687A TW103139012A TW103139012A TW201616687A TW 201616687 A TW201616687 A TW 201616687A TW 103139012 A TW103139012 A TW 103139012A TW 103139012 A TW103139012 A TW 103139012A TW 201616687 A TW201616687 A TW 201616687A
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- 238000004806 packaging method and process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 claims description 21
- 239000008393 encapsulating agent Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 10
- 239000012780 transparent material Substances 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 239000003822 epoxy resin Substances 0.000 claims description 2
- 229920000515 polycarbonate Polymers 0.000 claims description 2
- 239000004417 polycarbonate Substances 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- 239000000843 powder Substances 0.000 claims description 2
- 238000002834 transmittance Methods 0.000 claims 1
- 238000005538 encapsulation Methods 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
一種覆晶式LED封裝體,包括LED晶粒以及將所述LED晶粒封裝其內的封裝膠體,LED晶粒具有P電極和N電極,所述P電極和N電極均外露于所述封裝膠體之外。
Description
本發明涉及一種封裝體,特別是指一種覆晶式LED封裝體。
隨著LED產業不斷發展,覆晶式發光二極體以其封裝體積小、發光面積大等優勢正逐步替代常規發光二極體,而廣泛應用於LED照明產業。
目前高功率的覆晶式LED封裝體包括一基板及形成在所述基板上的半導體結構,為了提高覆晶式LED封裝體的發光亮度,會在覆晶式LED封裝體的半導體結構上形成多個槽狀結構區域並配合負載的電極,此種覆晶式LED封裝體一旦形成,製造過程無法重工、結構無法改變,當需要將其運用於不同亮度及功率的場合時,只有重新製作,造成成本提升、資源的浪費。
有鑑於此,有必要提供一種結構簡單、成本低廉的覆晶式LED封裝體。
一種覆晶式LED封裝體,包括LED晶粒以及將所述LED晶粒封裝其內的封裝膠體,LED晶粒具有P電極和N電極,所述P電極和N電極均外露于所述封裝膠體之外。
如此設置的覆晶式LED封裝體因封裝膠內的多個LED晶粒的P電極和N電極均外露,如此,在不同強度及功率的應用場合,藉由該等P電極和N電極與不同功率的電路連接方式的電路板配合而實現覆晶式LED晶粒的不同功率及不同亮度。當然,可以理解的,也可以藉由選擇不同數量的LED晶粒70與同一電路板的連接來實現LED封裝體的不同功率及不同亮度。如此,便提升了LED封裝體的通用性,進而降低了其製造成本。
圖1係本發明第一實施例中覆晶式LED封裝體與電路板配合的正視圖。
圖2係圖1所示覆晶式LED封裝體的仰視圖。
圖3係圖1所示覆晶式LED封裝體中晶粒結構的剖視圖。
圖4係本發明第二實施例中覆晶式LED封裝體與電路板配合的正視圖。
如圖1所示,為本發明第一實施例覆晶式LED封裝體100與電路板相配合的正視圖。該覆晶式LED封裝體100包括一封裝膠體60、包覆于封裝膠體內部的LED晶粒70。所述覆晶式LED封裝體100與一電路板80電性連接。
請同時參考圖2,所述封裝膠體60為環氧樹脂、聚碳酸酯等透明材料。所述封裝膠體60包覆多個所述LED晶粒70進而形成一覆晶式LED封裝體100。所述的LED晶粒70彼此之間藉由透明封裝膠體60粘結形成單一封裝組件。可以理解的,在本發明中,所述封裝膠體60中可包含螢光粉用於改變出光光效。每一LED晶粒70包括一個P電極231以及一個N電極211。所述P電極231及N電極211相對於覆晶式LED封裝體100的出光面設置且均裸露于封裝膠體60之外。每一P電231和每一N電極211電連接至電路板80。
如此設置的覆晶式LED封裝體100因封裝膠體60內的多個LED晶粒70的P電極231和N電極211均外露,如此,在不同強度及功率的應用場合,藉由該等P電極231和N電極211與不同功率的電路連接方式的電路板配合而實現覆晶式LED晶粒100的不同功率及不同亮度。當然,可以理解的,也可以藉由選擇不同數量的LED晶粒70與同一電路板的連接來實現LED封裝體100的不同功率及不同亮度。如此,便提升了LED封裝體100的通用性,進而降低了其製造成本。
本實施例展示了一串聯式電路板80與LED封裝體100的配合。所述電路板80上形成有正極81和負極82。所述正極81和負極82的數量為多個,且所述每一P電極231對應連接至正極81,所述每一N電極211對應連接至每一負極82。
所述LED晶粒70為覆晶式結構,其彼此之間藉由封裝膠體60粘結成一封裝元件,以滿足高效率高功率的出光需求,在本實施例中,所述覆晶式LED封裝體100中的LED晶粒70的數量為兩個,可以理解的是,為了滿足更大功率的發光需求,所述LED晶粒70的數量可以根據需要選擇。
請同時參考圖3,所述每一LED晶粒70包括一基板10以及形成在基板10之上的半導體層20。
所述基板10為藍寶石基板或為其他透明材料製成,以便於光線的出設。
所述半導體層20包括依次自上而下排列的N型半導體層21、發光活性層22及P型半導體層23。所述P型半導體層23上形成有P電極231,N型半導體層21上形成有N電極211。
所述N型半導體層21和P型半導體層23的材料為氮化鎵(GaN)。N型半導體層21主要提供電子,P型半導體層23主要提供電洞。發光活性層22為氮化鎵基材料,主要使電子和電洞聚集而產生光。
可以理解的,在上述半導體層20中,出於晶粒結構的設計需要,可在半導體層20中設置緩衝層、歐姆接觸層、擴散層、反射層等,此結構為本領域的常規技術手段,不再贅述。
如圖4所示,本發明第二實施例中覆晶式LED封裝體100a,其與第一實施例覆晶式LED封裝體100相似,其不同之處在於:第二實施例中展示了一並聯式電路板80a與LED封裝體100的配合,所述電路板80a為一並聯式電路結構,其包括正極81a和負極82a,所述正極81a和負極82a的數量為多個,且所述每一正極81a和每一負極82a分別對應與LED晶粒70的每一P電極231和每一N電極211連接。
10‧‧‧基板
20‧‧‧半導體層
21‧‧‧N型半導體層
22‧‧‧發光活性層
23‧‧‧P型半導體層
231‧‧‧P電極
211‧‧‧N電極
60‧‧‧封裝膠體
70‧‧‧LED晶粒
80、80a‧‧‧電路板
81、81a‧‧‧正極
82、82a‧‧‧負極
100、100a‧‧‧覆晶式LED封裝體
無
231‧‧‧P電極
211‧‧‧N電極
60‧‧‧封裝膠體
70‧‧‧LED晶粒
80‧‧‧電路板
81‧‧‧正極
82‧‧‧負極
100‧‧‧覆晶式LED封裝體
Claims (6)
- 一種覆晶式LED封裝體,包括LED晶粒以及將所述LED晶粒封裝其內的封裝膠體,LED晶粒具有P電極和N電極,其改良在於:所述P電極和N電極均外露于所述封裝膠體之外。
- 如申請專利範圍第1項所述覆晶式LED封裝體,其中:所述LED晶粒為覆晶式結構。
- 如申請專利範圍第1項所述覆晶式LED封裝體,其中:所述LED晶粒包括有基板和形成於基板上的半導體層。
- 如申請專利範圍第3項所述覆晶式LED封裝體,其中:所述半導體層包括自基板之上依次排列的N型半導體層、發光活性層和P型半導體層。
- 如申請專利範圍第1項所述覆晶式LED封裝體,其中:所述封裝膠體為為環氧樹脂、聚碳酸酯等透光性能良好的透明材料。
- 如申請專利範圍第1項所述覆晶式LED封裝體,其中:所述封裝膠體中還包括有螢光粉。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410556311.6A CN105591006A (zh) | 2014-10-20 | 2014-10-20 | 覆晶式led封装体 |
Publications (2)
Publication Number | Publication Date |
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TW201616687A true TW201616687A (zh) | 2016-05-01 |
TWI573296B TWI573296B (zh) | 2017-03-01 |
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TW103139012A TWI573296B (zh) | 2014-10-20 | 2014-11-11 | 覆晶式led封裝體 |
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US (1) | US20160111400A1 (zh) |
CN (1) | CN105591006A (zh) |
TW (1) | TWI573296B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102016106571A1 (de) * | 2016-04-11 | 2017-10-12 | Osram Opto Semiconductors Gmbh | Lichtemittierender Halbleiterchip, lichtemittierendes Bauelement und Verfahren zur Herstellung eines lichtemittierenden Bauelements |
CN105895785B (zh) * | 2016-04-25 | 2018-06-29 | 湘能华磊光电股份有限公司 | 倒装led芯片集成封装的光源组件结构及其制作方法 |
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US8999736B2 (en) * | 2003-07-04 | 2015-04-07 | Epistar Corporation | Optoelectronic system |
KR100828891B1 (ko) * | 2006-02-23 | 2008-05-09 | 엘지이노텍 주식회사 | Led 패키지 |
KR100956888B1 (ko) * | 2008-01-24 | 2010-05-11 | 삼성전기주식회사 | 발광 다이오드 패키지 및 그 제조 방법 |
TW201010122A (en) * | 2008-08-21 | 2010-03-01 | Univ Nat Central | Flip-chip light-emitting diode having the epitaxy strengthening layer, and fabrication method thereof |
TWI390777B (zh) * | 2009-07-23 | 2013-03-21 | Edison Opto Corp | 發光二極體組件之製造方法 |
TWI393273B (zh) * | 2009-08-27 | 2013-04-11 | Edison Opto Corp | 發光二極體組件之製造方法 |
CN101982883A (zh) * | 2010-09-01 | 2011-03-02 | 晶科电子(广州)有限公司 | 一种由倒装发光单元阵列组成的发光器件及其制造方法 |
US8652860B2 (en) * | 2011-01-09 | 2014-02-18 | Bridgelux, Inc. | Packaging photon building blocks having only top side connections in a molded interconnect structure |
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BR112013029686A2 (pt) * | 2011-05-24 | 2017-01-17 | Koninkl Philips Nv | estrutura de flip chip de diodo emissor de luz e método de formação de uma estrutura de flip chip de diodo emissor de luz |
US9322515B2 (en) * | 2011-06-29 | 2016-04-26 | Korry Electronics Co. | Apparatus for controlling the re-distribution of light emitted from a light-emitting diode |
JP2013153068A (ja) * | 2012-01-25 | 2013-08-08 | Shinko Electric Ind Co Ltd | 配線基板、発光装置及び配線基板の製造方法 |
WO2013118002A1 (en) * | 2012-02-10 | 2013-08-15 | Koninklijke Philips N.V. | Molded lens forming a chip scale led package and method of manufacturing the same |
US20130207136A1 (en) * | 2012-02-13 | 2013-08-15 | Hsin-Hui Cheng | Chip-on-board leds package with different wavelengths |
CN202616230U (zh) * | 2012-04-28 | 2012-12-19 | 天津三安光电有限公司 | 发光二极管封装结构 |
CN103531670B (zh) * | 2012-07-06 | 2016-09-07 | 哈尔滨化兴软控科技有限公司 | 发光二极管制造方法 |
DE102013208387A1 (de) * | 2013-05-07 | 2014-11-13 | Robert Bosch Gmbh | Silber-Komposit-Sinterpasten für Niedertemperatur Sinterverbindungen |
DE202014011392U1 (de) * | 2013-05-13 | 2020-02-21 | Seoul Semiconductor Co., Ltd. | LED-Gehäuse; Fahrzeuglampe sowie Hintergrundbeleuchtung mit diesem |
TWI626395B (zh) * | 2013-06-11 | 2018-06-11 | 晶元光電股份有限公司 | 發光裝置 |
US20150060911A1 (en) * | 2013-09-05 | 2015-03-05 | Unistars Corporation | Optoelectronic semiconductor device and fabricating method thereof |
KR101787921B1 (ko) * | 2013-09-05 | 2017-10-18 | 파나소닉 아이피 매니지먼트 가부시키가이샤 | 발광 장치 |
CN103872223A (zh) * | 2014-01-26 | 2014-06-18 | 上海瑞丰光电子有限公司 | 一种led晶片级封装方法 |
JP6303805B2 (ja) * | 2014-05-21 | 2018-04-04 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
US9691949B2 (en) * | 2014-05-30 | 2017-06-27 | Cree, Inc. | Submount based light emitter components and methods |
-
2014
- 2014-10-20 CN CN201410556311.6A patent/CN105591006A/zh active Pending
- 2014-11-11 TW TW103139012A patent/TWI573296B/zh active
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2015
- 2015-08-21 US US14/832,725 patent/US20160111400A1/en not_active Abandoned
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Publication number | Publication date |
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CN105591006A (zh) | 2016-05-18 |
TWI573296B (zh) | 2017-03-01 |
US20160111400A1 (en) | 2016-04-21 |
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