TW201616595A - Vacuum lock system and substrate processing method - Google Patents

Vacuum lock system and substrate processing method Download PDF

Info

Publication number
TW201616595A
TW201616595A TW103145594A TW103145594A TW201616595A TW 201616595 A TW201616595 A TW 201616595A TW 103145594 A TW103145594 A TW 103145594A TW 103145594 A TW103145594 A TW 103145594A TW 201616595 A TW201616595 A TW 201616595A
Authority
TW
Taiwan
Prior art keywords
chamber
substrate
vacuum
environment
robot
Prior art date
Application number
TW103145594A
Other languages
Chinese (zh)
Other versions
TWI563588B (en
Inventor
Lawrence Lei
Shen Jian Liu
Original Assignee
Advanced Micro Fabrication Equipment Shanghai Co L
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Fabrication Equipment Shanghai Co L filed Critical Advanced Micro Fabrication Equipment Shanghai Co L
Publication of TW201616595A publication Critical patent/TW201616595A/en
Application granted granted Critical
Publication of TWI563588B publication Critical patent/TWI563588B/zh

Links

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

A vacuum lock system for conveying substrates comprises a chamber body, a substrate holding assembly and an elevating mechanism. The chamber body includes a first chamber and a second chamber. The sidewall of the second chamber is formed with two openings selectively connected to atmosphere environment or vacuum environment. The first chamber proforms plasma processing on substrates therein. The substrate holding assembly is set in the chamber body and includes a separation board and a first and a second supporting elements for sustaining the substrates. The elevating mechanism drives the substrate holding assembly to move between a first position and a second position. The first position is a position where a bottom opening of the first chamber is sealed by the separation board, the first supporting element is set in the first chamber and the second supporting element corresponds to the two openings of the sidewall of the second chamber; the second position is a position where the first supporting element corresponds to the two openings. The present invention can increase the efficiency of substrate processing, and reduce the operation burden on robots.

Description

真空鎖系統及基片處理方法Vacuum lock system and substrate processing method

本發明涉及半導體加工設備及方法,特別涉及一種真空鎖系統及基片處理方法。The present invention relates to a semiconductor processing apparatus and method, and more particularly to a vacuum lock system and a substrate processing method.

在半導體元件的製造工序中,通常使用各種真空處理腔室在真空環境中對作為被處理基片的半導體晶片實施如薄膜沉積、蝕刻、氧化或氮化、熱處理等特定處理。而從外部向這樣的真空處理腔室進行半導體晶片的傳送,通常是通過具備將其內部壓力在大氣氣壓狀態和真空狀態之間切換的負載鎖定裝置來進行。一般來說,負載鎖定裝置設置於真空搬送室和大氣壓環境的外部如晶片盒或工廠介面之間。真空搬送室與各個真空處理腔室連結而形成集成的真空處理裝置,利用該真空搬送室中的機械手可將晶片向各個真空處理腔室傳送。負載鎖定裝置切換至大氣氣壓狀態時來自大氣壓環境的晶片搬入負載鎖定裝置中,之後負載鎖定裝置切換為真空狀態,其中的晶片搬送至真空搬送室。In the manufacturing process of a semiconductor element, a specific process such as thin film deposition, etching, oxidation or nitridation, heat treatment, or the like is performed on a semiconductor wafer as a substrate to be processed in a vacuum environment using various vacuum processing chambers. The transfer of the semiconductor wafer to the vacuum processing chamber from the outside is usually performed by a load lock device that switches the internal pressure between the atmospheric pressure state and the vacuum state. Typically, the load lock device is disposed between the vacuum transfer chamber and the exterior of the atmospheric environment, such as a wafer cassette or factory interface. The vacuum transfer chamber is coupled to each of the vacuum processing chambers to form an integrated vacuum processing device with which the wafer can be transferred to the various vacuum processing chambers. When the load lock device is switched to the atmospheric pressure state, the wafer from the atmospheric pressure environment is carried into the load lock device, and then the load lock device is switched to the vacuum state, and the wafer therein is transferred to the vacuum transfer chamber.

為了進一步提高負載鎖定裝置的效率,習知技術中還提出了兼具晶片處理以及晶片傳輸功能的負載鎖定裝置。如在負載鎖定裝置上方設置電漿體處理腔室完成對基片的如去光阻等工藝,通過真空機器人將已蝕刻的基板從真空蝕刻處理腔室傳送到負載鎖定裝置上方電漿體處理腔室進行熱處理工藝,以移除表面沉積的鹵素殘留物或光阻。之後對電漿體處理腔室通氣成大氣壓使其中的壓力與工廠介面的壓力相稱,再通過機器人將鹵素殘留物或光阻殘餘移除後的晶片傳送至工廠介面的晶圓盒FOUP。In order to further improve the efficiency of the load lock device, a load lock device having both wafer processing and wafer transfer functions has been proposed in the prior art. If a plasma processing chamber is disposed above the load lock device to complete a process such as photoresist removal on the substrate, the etched substrate is transferred from the vacuum etching processing chamber to the plasma processing chamber above the load lock device by a vacuum robot. The chamber is subjected to a heat treatment process to remove surface-deposited halogen residues or photoresist. The plasma processing chamber is then vented to atmospheric pressure so that the pressure therein is commensurate with the pressure of the factory interface, and the wafer after removal of the halogen residue or photoresist residue is transferred to the wafer interface FOUP of the factory interface by the robot.

這種負載鎖定裝置雖然進一步提高了其利用效率,然而,機器人的機械手要對不同高度的負載鎖定裝置和電漿體處理腔室分別進行基板的搬送,無疑對機器人的運動造成負擔,因此需要對此類負載鎖定裝置加以改進以簡化負載鎖定裝置及機器人的結構及操作方式。Although the load lock device further improves the utilization efficiency, the robot manipulator has to carry out the substrate transfer to the load lock device and the plasma processing chamber of different heights, which undoubtedly imposes a burden on the movement of the robot, and therefore requires Such load lock devices have been modified to simplify the structure and operation of the load lock device and the robot.

本發明的主要目的在於克服習知技術的缺陷,提供一種能夠減輕傳送機器人運動負擔且兼具基片處理和基片傳輸功能的真空鎖系統。SUMMARY OF THE INVENTION A primary object of the present invention is to overcome the deficiencies of the prior art and to provide a vacuum lock system capable of reducing the load of the transfer robot and having both a substrate processing and a substrate transfer function.

為達成上述目的,本發明提供一種傳送基片的真空鎖系統,包含腔室主體、基片支撐組件和升降機構。其中,所述腔室主體包括垂直堆疊的第一室和第二室,其中所述第二室側壁上形成可選擇性地連接至大氣氣氛環境或真空處理環境的兩個開口,所述第一室用於對置於其中的基片進行電漿體處理,其具有與所述第一室連通的底部開口。所述基片支撐組件以可升降的方式設置於所述腔室主體中,其包括垂直堆疊的分別用於承載基片的第一支撐件和第二支撐件,以及位於所述第一支撐件和第二支撐件之間的、尺寸大於所述第一支撐件的隔離板。所述升降機構用於驅動所述基片支撐組件在一第一位置和一第二位置之間移動,所述第一位置為所述隔離板密封所述第一室的底部開口、所述第一支撐件置於所述第一室內且所述第二支撐件對應所述第二室側壁上形成的兩個開口處,所述第二位置為所述第一支撐件對應所述第二室側壁上形成的兩個開口處。To achieve the above object, the present invention provides a vacuum lock system for transferring a substrate, comprising a chamber body, a substrate support assembly, and a lifting mechanism. Wherein the chamber body includes a first chamber and a second chamber that are vertically stacked, wherein the second chamber sidewall forms two openings selectively connectable to an atmospheric atmosphere or a vacuum processing environment, the first The chamber is for plasma treatment of a substrate placed therein having a bottom opening in communication with the first chamber. The substrate support assembly is disposed in the chamber body in a liftable manner, and includes a first support member and a second support member respectively stacked vertically for carrying the substrate, and the first support member And a spacer between the second support member and having a size larger than the first support member. The lifting mechanism is configured to drive the substrate supporting assembly to move between a first position and a second position, the first position is a sealing opening of the first chamber, the first opening a support member is disposed in the first chamber and the second support member corresponds to two openings formed on sidewalls of the second chamber, and the second position is that the first support member corresponds to the second chamber Two openings formed on the side walls.

優選地,當所述基片支撐組件位於所述第一位置時,通過所述第二室將經所述第一室處理的基片傳送至所述大氣氣氛環境以及將來自所述大氣氣氛環境的基片傳送至所述真空處理環境;當所述基片支撐組件位於所述第二位置時,將所述第一支撐件上完成電漿體處理的基片移除並將經所述真空處理環境處理的基片傳送至所述第一支撐件。Preferably, when the substrate support assembly is in the first position, the substrate processed by the first chamber is transferred to the atmospheric atmosphere environment and from the atmospheric atmosphere environment through the second chamber Substrate transferred to the vacuum processing environment; when the substrate support assembly is in the second position, removing the plasma-processed substrate on the first support and passing the vacuum The environmentally treated substrate is transferred to the first support.

優選地,所述真空鎖系統還包括由所述升降機構驅動且可相對該基片支撐組件移動的升降銷組件;當該基片支撐組件位於所述第二位置時,所述升降銷組件下端抵靠於所述第二室底部、上端位於所述第一支撐件上方以抬起其上的基片,當該基片支撐組件位於所述第一位置時,所述升降銷組件下端懸空、上端位於所述第一支撐件下方。Preferably, the vacuum lock system further includes a lift pin assembly driven by the lift mechanism and movable relative to the substrate support assembly; the lower end of the lift pin assembly when the substrate support assembly is in the second position a substrate abutting against the bottom of the second chamber and an upper end above the first support member to lift the substrate, and when the substrate support assembly is in the first position, the lower end of the lift pin assembly is suspended, The upper end is located below the first support.

優選地,所述第二室具有以開閉的方式對所述兩個開口進行密封的門閥機構,以使所述第二室可選擇性地連接至大氣氣氛環境或真空處理環境。Preferably, the second chamber has a gate valve mechanism that seals the two openings in an open and closed manner such that the second chamber is selectively connectable to an atmospheric or vacuum processing environment.

優選地,所述第一室和第二室各自具有排氣裝置以獨立控制其中的壓力,使得所述第一室在真空環境下對其中的基片進行電漿體處理,所述第二室在向所述大氣氣氛環境傳送基片時切換為大氣氣壓環境,在向所述真空處理環境傳送基片時切換為真空環境。Preferably, the first chamber and the second chamber each have an exhaust device to independently control the pressure therein such that the first chamber performs a plasma treatment on the substrate therein in a vacuum environment, the second chamber The substrate is switched to an atmospheric pressure environment when the substrate is transferred to the atmosphere, and is switched to a vacuum environment when the substrate is transferred to the vacuum processing environment.

優選地,所述第一支撐件具有加熱器,用於加熱放置於所述第一支撐件上的基片;所述加熱器通過一絕熱件與所述隔離板隔離。Preferably, the first support has a heater for heating a substrate placed on the first support; the heater is isolated from the insulation plate by a heat insulator.

優選地,所述第一室為祛光阻電漿體處理室。Preferably, the first chamber is a tantalum photoresist plasma processing chamber.

優選地,所述第二支撐件具有上下設置的兩層插槽,以分別放置兩片基片,其中一層插槽用於放置來自所述大氣氣氛環境的基片,另一層插槽用於放置經所述第一室處理完畢的基片。Preferably, the second support member has two layers of slots disposed above and below to respectively place two substrates, wherein one layer of the socket is for placing the substrate from the atmospheric atmosphere environment, and the other layer is for placing the substrate. The substrate processed through the first chamber.

優選地,所述真空鎖系統為兩個,兩個所述真空鎖系統相鄰並行排列且其第一室共用排氣裝置。Preferably, the vacuum lock system is two, and the two vacuum lock systems are arranged adjacent to each other in parallel and the first chamber thereof shares the exhaust device.

優選地,所述真空鎖系統一側與真空環境的機械手工作腔相連,另一側與大氣氣氛環境中的機械手工作腔相連。Preferably, one side of the vacuum lock system is connected to the robot working chamber of the vacuum environment, and the other side is connected to the robot working chamber in an atmospheric atmosphere environment.

優選地,所述真空環境的機械手工作腔內包括第一機械手和第二機械手,所述第一機械手和第二機械手用於在所述基片支撐組件和所述真空處理環境之間,以及在所述基片支撐組件的第一支撐件和第二支撐件之間傳送基片;所述大氣氣氛環境中的機械手工作腔包括第三機械手和第四機械手,所述第三機械手和所述第四機械手用於在所述第二支撐件和所述大氣氣氛環境之間傳送基片。Preferably, the robot working chamber of the vacuum environment includes a first robot and a second robot, the first robot and the second robot being used in the substrate supporting assembly and the vacuum processing environment Transferring a substrate between the first support member and the second support member of the substrate support assembly; the robot working chamber in the atmosphere atmosphere environment includes a third robot and a fourth robot The third robot and the fourth robot are used to transfer the substrate between the second support and the atmosphere.

優選地,當所述真空鎖系統為兩個時,所述第一機械手和所述第二機械手均為雙臂機械手。Preferably, when the vacuum lock system is two, the first robot and the second robot are both two-arm robots.

根據本發明的另一方面,還提供了一種基片處理方法,為利用上述真空鎖系統所進行的基片處理方法,其包括:According to another aspect of the present invention, there is also provided a substrate processing method for a substrate processing method using the above vacuum lock system, comprising:

步驟S1:將所述基片支撐組件下降至所述第二位置,將所述真空處理環境處理的基片放置在所述第一支撐件上;Step S1: lowering the substrate supporting assembly to the second position, and placing the vacuum processing environment-treated substrate on the first supporting member;

步驟S2:將所述基片支撐組件上升至所述第一位置,通過所述真空鎖系統的第一室對放置在其中的經所述真空處理環境處理的基片進行電漿體處理;Step S2: raising the substrate supporting assembly to the first position, and performing plasma treatment on the substrate processed by the vacuum processing environment placed therein through the first chamber of the vacuum lock system;

步驟S3:將所述基片支撐組件下降至所述第二位置;拾取所述第一支撐件上經所述第一室處理完成的基片;Step S3: lowering the substrate supporting assembly to the second position; picking up the substrate on the first supporting member processed by the first chamber;

步驟S4:將所述基片支撐組件上升至所述第一位置,將經所述第一室處理完成的基片通過所述真空鎖系統的第二室傳送至所述大氣氣氛環境,通過所述真空鎖系統的第二室將來自所述大氣氣氛環境的另一基片傳送至所述真空處理環境。Step S4: raising the substrate supporting assembly to the first position, transferring the substrate processed by the first chamber to the atmosphere of the atmosphere through the second chamber of the vacuum lock system, passing through the A second chamber of the vacuum lock system delivers another substrate from the atmosphere to the vacuum processing environment.

優選的,所述步驟S1和S3中所述第二室內為真空環境,其中步驟S1中,通過第二機械手將所述真空處理環境處理的基片放置在所述第一支撐件上;步驟S3中,通過第一機械手拾取所述第一支撐件上的經所述第一室處理完成的基片;Preferably, the second chamber in the steps S1 and S3 is a vacuum environment, wherein in step S1, the vacuum processing environment-treated substrate is placed on the first support member by a second robot; In S3, the substrate processed by the first chamber on the first support member is picked up by a first robot;

步驟S4中將經所述第一室處理完成的基片傳送至所述大氣氣氛環境以及通過所述真空鎖系統的第二室將來自所述大氣氣氛環境的另一基片傳送至所述真空處理環境的步驟包括:Transferring the substrate processed by the first chamber to the atmospheric atmosphere environment and transferring another substrate from the atmospheric atmosphere environment to the vacuum through a second chamber of the vacuum lock system in step S4 The steps to handle the environment include:

通過所述第一機械手將經其已拾取的經所述第一室處理完成的基片放置於所述第二支撐件;Placing a substrate processed by the first chamber that has been picked up by the first robot to the second support member;

切換所述第二室內為大氣壓環境,之後通過第三機械手拾取該第二支撐件上的經所述第一室處理完畢的基片並傳送至所述大氣氣氛環境,通過第四機械手將來自所述大氣氣氛環境的另一未處理基片放置於所述第二支撐件;Switching the second chamber into an atmospheric environment, and then picking up the substrate processed by the first chamber on the second support by a third robot and transmitting to the atmospheric atmosphere, through a fourth robot Another unprocessed substrate from the atmospheric atmosphere environment is placed on the second support;

切換所述第二室內為真空環境。Switching the second chamber into a vacuum environment.

優選地,所述真空鎖系統為兩個,兩個所述真空鎖系統相鄰並行排列且其第一室共用排氣裝置,所述第一機械手和所述第二機械手均為雙臂機械手,以在步驟S1,S3和S4中分別在兩個所述真空鎖系統的基片支撐組件和所述真空處理環境之間,以及在兩個所述基片支撐組件的第一支撐件和第二支撐件之間同步進行基片傳送動作。Preferably, the vacuum lock system is two, two of the vacuum lock systems are adjacently arranged in parallel and the first chamber shares the exhaust device, and the first robot and the second robot are both arms a robot, in steps S1, S3 and S4 between the substrate support assembly of the two vacuum lock systems and the vacuum processing environment, and the first support of the two substrate support assemblies The substrate transfer operation is synchronized with the second support member.

本發明的有益效果在於通過升降機構的設置使基片支撐組件在位於上部的第一室和位於下部的第二室之間移動,使得機械手無需上升至第一室拾取和傳送基片,減小了了機械手在不同高度傳送基片的負擔,簡化了機械手的操作複雜度提高了工作效率。The invention has the beneficial effects that the substrate supporting assembly is moved between the first chamber located at the upper portion and the second chamber located at the lower portion by the arrangement of the lifting mechanism, so that the robot does not need to rise to the first chamber to pick up and transport the substrate, The burden of transferring the substrate at different heights by the robot is reduced, which simplifies the operation complexity of the robot and improves work efficiency.

為使本發明的內容更加清楚易懂,以下結合說明書附圖,對本發明的內容作進一步說明。當然本發明並不局限於該具體實施例,本領域內的技術人員所熟知的一般替換也涵蓋在本發明的保護範圍內。In order to make the content of the present invention clearer and easier to understand, the contents of the present invention will be further described below in conjunction with the accompanying drawings. Of course, the invention is not limited to the specific embodiment, and general replacements well known to those skilled in the art are also encompassed within the scope of the invention.

圖1和圖2是根據本發明一實施例的真空鎖系統的剖視圖。真空鎖系統具有腔室主體10,基片支撐組件20和升降機構30。腔室主體10包括第一室11和第二室12,第一室11與第二室12垂直堆疊在一起。其中,第一室11用於對置於其中的基片進行電漿體處理,例如其可以是從該基片表面移除光阻的祛光阻電漿體處理室。可以理解的是,第一室11也可以是諸如去除蝕刻殘留物的其他電漿體處理室。第一室11內可設置用於輸入反應氣體的供氣裝置(如氣體噴淋頭,未圖示)及排氣裝置112。供氣裝置可與遠端電漿體源連接以將其產生的反應氣體的電漿體提供至第一室,或可與RF射頻源連接而在第一室11內將反應氣體電離為電漿體。第一室11的底部具有與第二室12連通的開口。第二室12用於在相鄰的環境之間進行基片交換,其側壁形成兩個開口121和122,其中開口121適於連接至大氣氣氛環境,如基片存儲盒等工廠周遭環境,而開口122適於連接至真空處理環境,如用於對基片進行各類真空處理的真空處理腔。通過對兩個開口121和122的密封控制,可以選擇性地切換第二室12與真空處理環境或大氣氣氛環境連通,以在兩種不同氣壓的環境間傳送基板。較佳地,第二室12具有門閥機構123和124,門閥機構123和124以開閉的方式分別對兩個開口121和122進行密封,以使得第二室12可選擇性地連接至大氣氣氛環境或真空處理環境。此外,第二室12還具有排氣裝置125(如真空泵),用於控制第二室12內的壓力切換為大氣環境壓力或真空環境壓力。由於第一室11和第二室12各自具有排氣裝置以獨立控制其中的壓力,可實現第一室11在真空環境下對其中的基片進行電漿體處理,第二室12在向大氣氣氛環境傳送基片時切換為大氣氣壓環境,在向真空處理環境傳送基片時切換為真空環境。1 and 2 are cross-sectional views of a vacuum lock system in accordance with an embodiment of the present invention. The vacuum lock system has a chamber body 10, a substrate support assembly 20 and a lifting mechanism 30. The chamber body 10 includes a first chamber 11 and a second chamber 12, and the first chamber 11 and the second chamber 12 are vertically stacked. Wherein, the first chamber 11 is used for plasma treatment of the substrate placed therein, for example, it may be a photoresist photoresist processing chamber for removing photoresist from the surface of the substrate. It will be appreciated that the first chamber 11 may also be another plasma processing chamber such as an etch residue. A gas supply device (such as a gas shower head, not shown) and an exhaust device 112 for inputting a reaction gas may be disposed in the first chamber 11. The gas supply means may be connected to the remote plasma source to supply the plasma of the reaction gas generated thereby to the first chamber, or may be coupled to the RF source to ionize the reaction gas into the plasma in the first chamber 11. body. The bottom of the first chamber 11 has an opening that communicates with the second chamber 12. The second chamber 12 is for substrate exchange between adjacent environments, the side walls of which form two openings 121 and 122, wherein the opening 121 is adapted to be connected to an atmospheric atmosphere environment, such as a factory surrounding environment such as a substrate storage case, and The opening 122 is adapted to be connected to a vacuum processing environment, such as a vacuum processing chamber for various types of vacuum processing of the substrate. By sealing control of the two openings 121 and 122, the second chamber 12 can be selectively switched into communication with a vacuum processing environment or an atmospheric atmosphere environment to transfer the substrate between two different air pressure environments. Preferably, the second chamber 12 has gate valve mechanisms 123 and 124 which respectively seal the two openings 121 and 122 in an open and closed manner so that the second chamber 12 can be selectively connected to the atmospheric atmosphere environment. Or vacuum processing environment. In addition, the second chamber 12 also has an exhaust device 125 (such as a vacuum pump) for controlling the pressure in the second chamber 12 to be switched to atmospheric ambient pressure or vacuum ambient pressure. Since the first chamber 11 and the second chamber 12 each have an exhaust device to independently control the pressure therein, the first chamber 11 can be subjected to plasma treatment of the substrate therein in a vacuum environment, and the second chamber 12 is in the atmosphere. The atmosphere is switched to an atmospheric pressure environment when the substrate is transferred, and is switched to a vacuum environment when the substrate is transferred to the vacuum processing environment.

基片支撐組件20以可升降地方式設置在腔室主體10中。其中,基片支撐組件20包括第一支撐件21、第二支撐件22和隔離板23。第一支撐件21、隔離板23和第二支撐件22自上而下垂直堆疊。第一和第二支撐件21,22均用於承載基片。隔離板23的尺寸要大於第一支撐件21,用於在第一支撐件21置於第一室內時密封第一室11底部與第二室12連通的開口而將第一室11與第二室12隔離。為了進一步改善隔離板23的密封效果,隔離板23優選在其邊緣處具有O形密封圈25。由於通過第二室12進行的基片傳送,包括傳送至大氣氣氛環境和真空處理環境兩個方向的傳送,為提高傳送效率,在本發明的一較佳實施例中,第二支撐件22具有上下設置的兩層插槽221、222,用於分別放置兩片基片。其中上層插槽221用於放置來自大氣氣氛環境、將要傳送至真空處理環境的基片,而下層插槽222用於放置經第一室11處理完畢的、將要傳送至大氣氣氛環境的基片或者上層插槽221用於放置經第一室11處理完畢的、將要傳送至大氣氣氛環境的基片,而下層插槽222用於放置來自大氣氣氛環境、將要傳送至真空處理環境的基片。另一方面,由於第一室11對置於其中的基片進行電漿體處理時,需對基片進行加熱。因此,在第一支撐件21中設置加熱器(未圖示),如加熱絲,來配合第一室11的電漿體處理對放置於第一支撐件上的基片進行加熱。加熱器通過一絕熱件和隔離板23隔離,防止熱量洩漏。The substrate support assembly 20 is disposed in the chamber body 10 in a liftable manner. Wherein, the substrate supporting assembly 20 includes a first supporting member 21, a second supporting member 22, and a partitioning plate 23. The first support member 21, the partitioning plate 23, and the second support member 22 are vertically stacked from top to bottom. Both the first and second support members 21, 22 are used to carry the substrate. The partitioning plate 23 is larger in size than the first supporting member 21 for sealing the opening of the bottom of the first chamber 11 in communication with the second chamber 12 when the first supporting member 21 is placed in the first chamber, and the first chamber 11 and the second chamber Room 12 is isolated. In order to further improve the sealing effect of the separator 23, the separator 23 preferably has an O-ring 25 at its edge. In order to improve the transfer efficiency, the second support member 22 has a transfer of the substrate through the second chamber 12, including transfer to both the atmospheric atmosphere environment and the vacuum processing environment. To improve the transfer efficiency, in a preferred embodiment of the present invention, the second support member 22 has Two layers of slots 221, 222 disposed above and below are used to respectively place two substrates. The upper slot 221 is for placing a substrate from an atmospheric atmosphere, which is to be transferred to a vacuum processing environment, and the lower slot 222 is for placing a substrate that has been processed by the first chamber 11 and is to be transferred to an atmospheric atmosphere or The upper slot 221 is for placing a substrate that has been processed through the first chamber 11 and that is to be transported to an atmospheric atmosphere, and the lower slot 222 is for placing a substrate from the atmospheric atmosphere that is to be transferred to the vacuum processing environment. On the other hand, since the first chamber 11 is subjected to plasma treatment of the substrate placed therein, the substrate needs to be heated. Therefore, a heater (not shown), such as a heating wire, is provided in the first support member 21 to heat the substrate placed on the first support member in cooperation with the plasma treatment of the first chamber 11. The heater is isolated by a heat insulating member and a separator 23 to prevent heat leakage.

升降機構30用於驅動基片支撐組件20在第一位置(如圖1所示)和第二位置(如圖2所示)之間移動。具體的,這裡所說的第一位置指的是第一支撐件21置於第一室11內、隔離板23將第一室11的底部開口密封、第二支撐件22則位於第二室12內且對應於第二室12的兩個開口121和122處;第二位置指的是第一支撐件21位於第二室12內且對應於兩個開口121,122處。因此,當基片支撐組件20上升至第一位置時,隔離板23將第一室11與第二室12隔離,第一室11和第二室12分別進行不同的操作,即第一室11對置於其中的基片進行電漿體處理,第二室12則將來自大氣氣氛環境的基片傳送至真空處理環境以及將經第一室11處理的基片傳送至大氣氣氛環境;當第一室11中基片處理完畢後,通過升降機構30的動作使基片支撐組件20下降至第二位置,就可方便地將第二室12內第一支撐件21上的經第一室11處理的基片拾取移出,將經真空處理環境處理的基片放置在第一支撐件21上,實現第一支撐件21上基片的替換。當升降機構30再次升起基片支撐組件20至第一位置時,被替換下來的經第一室11處理的基片放入第二室12中的第二支撐件22內以被傳送至大氣氣氛環境。由於基片傳送的過程始終在相同高度(第二室)進行,大大減輕了機械手(或機器人)的運動負擔。The lift mechanism 30 is used to drive the substrate support assembly 20 to move between a first position (shown in Figure 1) and a second position (shown in Figure 2). Specifically, the first position referred to herein means that the first support member 21 is placed in the first chamber 11, the partition plate 23 seals the bottom opening of the first chamber 11, and the second support member 22 is located in the second chamber 12. Inside and corresponding to the two openings 121 and 122 of the second chamber 12; the second position means that the first support 21 is located in the second chamber 12 and corresponds to the two openings 121, 122. Therefore, when the substrate supporting assembly 20 is raised to the first position, the partitioning plate 23 isolates the first chamber 11 from the second chamber 12, and the first chamber 11 and the second chamber 12 respectively perform different operations, that is, the first chamber 11 The substrate placed therein is subjected to a plasma treatment, and the second chamber 12 transfers the substrate from the atmospheric atmosphere to the vacuum processing environment and transfers the substrate processed through the first chamber 11 to an atmospheric atmosphere; After the processing of the substrate in the chamber 11 is completed, the substrate support assembly 20 is lowered to the second position by the action of the lifting mechanism 30, so that the first chamber 11 on the first support member 21 in the second chamber 12 can be conveniently disposed. The processed substrate is picked up and removed, and the substrate processed by the vacuum processing environment is placed on the first support member 21 to effect replacement of the substrate on the first support member 21. When the lifting mechanism 30 raises the substrate supporting assembly 20 to the first position again, the replaced substrate processed by the first chamber 11 is placed in the second support 22 in the second chamber 12 to be transferred to the atmosphere. Atmosphere. Since the process of substrate transfer is always performed at the same height (second chamber), the mechanical load of the robot (or robot) is greatly reduced.

請繼續參考圖1及圖2,本實施例中,升降銷組件31以穿過隔離板23的方式設置於基片支撐組件上。升降銷組件31同樣連接至升降機構由其驅動而可相對基片支撐組件20上下移動。升降銷組件31具有多個升降銷,每個升降銷具有水準的支撐部。當基片支撐組件20上升至第一位置時,升降銷組件31下端懸空、上端位於第一支撐件21下方,較佳的是抵靠在隔離板23的上表面。當基片支撐組件20位於第二位置時,升降銷組件31的下端抵靠於第二室12的底部、上端則位於第一支撐件21上方,其水準的支撐部將第一支撐件21上的基片抬起,以利於基片的傳送。With continued reference to FIGS. 1 and 2, in the present embodiment, the lift pin assembly 31 is disposed on the substrate support assembly in a manner to pass through the spacer 23. The lift pin assembly 31 is also coupled to the lift mechanism for driving up and down relative to the substrate support assembly 20. The lift pin assembly 31 has a plurality of lift pins, each lift pin having a level of support. When the substrate support assembly 20 is raised to the first position, the lower end of the lift pin assembly 31 is suspended and the upper end is located below the first support member 21, preferably against the upper surface of the partition plate 23. When the substrate supporting assembly 20 is in the second position, the lower end of the lifting pin assembly 31 abuts against the bottom of the second chamber 12, and the upper end is located above the first supporting member 21, and the level of the supporting portion thereof will be on the first supporting member 21. The substrate is lifted to facilitate the transfer of the substrate.

接下來將結合圖3a~3e對本發明實施例的真空鎖系統進行基片處理的過程加以詳細說明,該過程中涉及W1、W2、W3和W4四片基片的處理,其中Wi表示來自大氣氣氛環境的未處理基片,Wi'表示經真空處理環境處理的基片,Wi''表示經第一室處理的基片,i=1,2,3,4。Next, the process of substrate processing of the vacuum lock system of the embodiment of the present invention will be described in detail with reference to FIGS. 3a to 3e, which involves processing of four substrates of W1, W2, W3 and W4, wherein Wi represents atmospheric atmosphere. An unprocessed substrate of the environment, Wi' denotes a substrate processed by a vacuum processing environment, and Wi'' denotes a substrate processed by the first chamber, i = 1, 2, 3, 4.

真空鎖系統一側連接大氣氣氛環境,一側連接真空處理環境。本實施例中,真空鎖系統一側與真空環境的機械手工作腔50相連,另一側與大氣氣氛環境中的機械手工作腔40相連。機械手工作腔50可與多個真空處理腔連接,這些真空處理腔用於對經機械手工作腔50傳送的基片進行真空處理。機械手工作腔40可與例如大氣氣氛的基片儲存盒連接。真空處理環境的機械手工作腔50內包括第一機械手51和第二機械手52。大氣氣氛環境的機械手工作腔40內包括第三機械手41和第四機械手42。其中第一機械手51和第二機械手52用於在基片支撐組件20和真空處理環境之間,以及在基片支撐組件20的第一支撐件21和第二支撐件22之間傳送基片。第三機械手41和第四機械手42用於在第二支撐件22和大氣氣氛環境之間傳送基片。通過這些機械手配合升降機構30、閥門機構及相應排氣裝置的操作,可實現所期望的基片傳送及處理動作。One side of the vacuum lock system is connected to the atmosphere atmosphere, and one side is connected to the vacuum processing environment. In this embodiment, one side of the vacuum lock system is connected to the robot working chamber 50 of the vacuum environment, and the other side is connected to the robot working chamber 40 in the atmosphere environment. The robotic working chamber 50 can be coupled to a plurality of vacuum processing chambers for vacuum processing the substrate transported through the robotic working chamber 50. The robotic working chamber 40 can be coupled to a substrate storage case such as an atmospheric atmosphere. The first robot 51 and the second robot 52 are included in the robot working chamber 50 of the vacuum processing environment. The third robot 41 and the fourth robot 42 are included in the robot working chamber 40 of the atmospheric atmosphere environment. Wherein the first robot 51 and the second robot 52 are used to transfer a base between the substrate support assembly 20 and the vacuum processing environment, and between the first support 21 and the second support 22 of the substrate support assembly 20. sheet. The third robot 41 and the fourth robot 42 are used to transfer the substrate between the second support 22 and the atmospheric atmosphere. By the operation of these robots in conjunction with the lift mechanism 30, the valve mechanism, and the corresponding exhaust device, desired substrate transfer and processing operations can be achieved.

首先,請參照圖3a,升降機構30將基片支撐組件20下降至第二位置,經第一室11處理完畢的基片W1''置於第二室中。此時,第二室12與真空處理環境間進行基片的傳送,因此通過門閥機構123密封開口121,通過門閥機構124打開開口122。通過控制排氣裝置125使第二室內保持為真空環境。由於此時第一室11不進行電漿體處理,第一支撐件21的加熱器不再工作;第一室11的排氣裝置112可與機械手工作腔50連通,從而通過機械手工作腔50的排氣裝置53和第二室的排氣裝置125,實現機械手工作腔50、第一室11和第二室12內達到均衡的真空環境。機械手工作腔50內的第一機械手51從第一支撐件21上拾取基片W1'',然後,第二機械手52將經真空處理環境中處理的基片W2'放置於第一支撐件21上,本實施例中,此時第二支撐件22的上層插槽221上已經放置了另一片來自大氣氣氛環境的未處理基片W3。First, referring to Fig. 3a, the lifting mechanism 30 lowers the substrate supporting assembly 20 to the second position, and the substrate W1'' processed through the first chamber 11 is placed in the second chamber. At this time, the substrate is transferred between the second chamber 12 and the vacuum processing environment, so that the opening 121 is sealed by the gate valve mechanism 123, and the opening 122 is opened by the gate valve mechanism 124. The second chamber is maintained in a vacuum environment by controlling the exhaust device 125. Since the first chamber 11 is not subjected to the plasma treatment at this time, the heater of the first support member 21 is no longer operated; the exhaust device 112 of the first chamber 11 can communicate with the robot working chamber 50, thereby passing through the robot working chamber. The exhaust unit 53 of the 50 and the exhaust unit 125 of the second chamber achieve a balanced vacuum environment within the robot working chamber 50, the first chamber 11 and the second chamber 12. The first robot 51 in the robot working chamber 50 picks up the substrate W1" from the first support member 21. Then, the second robot 52 places the substrate W2' processed in the vacuum processing environment on the first support. On the member 21, in this embodiment, another unprocessed substrate W3 from the atmosphere environment has been placed on the upper slot 221 of the second support member 22.

接著,如圖3b所示,升降機構30將基片支撐組件上升至第一位置,基片W2'被置於第一室11中進行例如去光阻的電漿體處理P。因此,此時第一室11的排氣裝置112將第一室11內的反應副產物排出並控制其內的真空度,因此不再與機械手工作腔50連通。真空側第一機械手51將其拾取的已處理基片W1''放置於第二支撐件22的下層插槽222內,第二機械手52則拾取上層插槽221中的未處理基片W3並傳送至真空處理環境的相應真空處理腔內。Next, as shown in FIG. 3b, the elevating mechanism 30 raises the substrate supporting assembly to the first position, and the substrate W2' is placed in the first chamber 11 to perform, for example, photoresist processing P. Therefore, at this time, the exhaust device 112 of the first chamber 11 discharges the reaction by-products in the first chamber 11 and controls the degree of vacuum therein, and thus no longer communicates with the robot working chamber 50. The vacuum side first robot 51 places the picked-up processed substrate W1'' in the lower layer slot 222 of the second support member 22, and the second robot hand 52 picks up the unprocessed substrate W3 in the upper layer slot 221. And transferred to the corresponding vacuum processing chamber of the vacuum processing environment.

然後,請參照圖3c,本步驟中將第二室12內切換為大氣環境。具體地,通過門閥機構124密封開口122而隔斷第二室12與真空環境的機械手工作腔50的連通;通過門閥機構123密封開口121而隔斷第二室12與大氣環境的機械手工作腔40的連通,通過第二室的排氣裝置125通入大氣以改變第二室12內的氣壓,使其為常壓。此過程中,機械手工作腔50和第一室11仍保持為真空環境。Then, referring to FIG. 3c, in this step, the inside of the second chamber 12 is switched to the atmospheric environment. Specifically, the opening 122 is sealed by the gate valve mechanism 124 to block the communication between the second chamber 12 and the robot working chamber 50 of the vacuum environment; the opening 121 is sealed by the gate valve mechanism 123 to block the second chamber 12 and the robot working chamber 40 of the atmospheric environment. The communication is communicated to the atmosphere through the exhaust unit 125 of the second chamber to change the air pressure in the second chamber 12 to be normal pressure. During this process, the robot working chamber 50 and the first chamber 11 remain in a vacuum environment.

請繼續參考圖3d,本步驟中進行第二室12與大氣氣氛環境間的基片傳送。具體的,門閥機構124仍然密封開口122,門閥機構123打開開口121使得第二室12與大氣環境的機械手工作腔40連通。第二室12的排氣裝置125關閉,不通入或排出氣體。第三機械手41拾取第二支撐件22的下層插槽222中的經第一室處理的基片W1''並傳送至大氣氣氛環境如存儲盒中,第四機械手42將大氣氣氛環境中的未處理基片W4置於第二支撐件22的上層插槽221上。With continued reference to Figure 3d, substrate transfer between the second chamber 12 and the atmosphere environment is performed in this step. Specifically, the gate valve mechanism 124 still seals the opening 122, and the gate valve mechanism 123 opens the opening 121 such that the second chamber 12 is in communication with the robotic working chamber 40 of the atmosphere. The exhaust unit 125 of the second chamber 12 is closed, and no gas is introduced or exhausted. The third robot 41 picks up the first chamber-processed substrate W1'' in the lower layer slot 222 of the second support member 22 and transports it to an atmospheric atmosphere such as a storage case, and the fourth robot 42 is placed in an atmospheric atmosphere. The unprocessed substrate W4 is placed on the upper layer slot 221 of the second support member 22.

接下來,如圖3e所示,將第二室12內切換為真空環境。具體地,通過門閥機構124密封開口124而隔斷第二室12與真空環境的機械手工作腔50的連通;通過門閥機構123密封開口121而隔斷第二室12與大氣環境的機械手工作腔40的連通,通過第二室的排氣裝置125進行排氣以改變第二室12內的氣壓為真空。此過程中,機械手工作腔50和第一室11仍保持為真空環境。Next, as shown in FIG. 3e, the inside of the second chamber 12 is switched to a vacuum environment. Specifically, the opening 124 is sealed by the gate valve mechanism 124 to block the communication between the second chamber 12 and the robot working chamber 50 of the vacuum environment; the opening 121 is sealed by the gate valve mechanism 123 to block the second chamber 12 and the robot working chamber 40 of the atmospheric environment. The communication is exhausted through the exhaust unit 125 of the second chamber to change the air pressure in the second chamber 12 to a vacuum. During this process, the robot working chamber 50 and the first chamber 11 remain in a vacuum environment.

當圖3a~3e所示的各步驟完成後,升降機構30又將基片支撐組件20下降至第二位置,再次進行第二室12與真空處理環境的基片傳送(如圖3a所示)。After the steps shown in Figures 3a to 3e are completed, the lifting mechanism 30 again lowers the substrate supporting assembly 20 to the second position, and again performs substrate transfer of the second chamber 12 and the vacuum processing environment (as shown in Figure 3a). .

需要說明的是,本發明中第二支撐件的插槽數量以及大氣氣氛環境的機械手工作腔內的機械手數量可根據實際需求設定。例如在上述實施例中,第二支撐件22具有兩個插槽,但在實際應用中,第二支撐件22僅具有一個插槽也足以完成上述基片處理過程。在此情況下,在圖3b所示的步驟中,第二機械手52先將第二支撐件22插槽中的未處理基片W3並傳送至真空處理環境的相應真空處理腔內,然後第一機械手51再將其拾取的已處理基片W1''放置於第二支撐件22的該插槽中。而在圖3d所示的步驟中,第三機械手41先拾取第二支撐件22插槽中的經第一室處理的基片W1''並傳送至大氣氣氛環境如存儲盒中,然後第四機械手42再將大氣氣氛環境中的未處理基片W4置於第二支撐件22的該插槽中。It should be noted that, in the present invention, the number of slots of the second support member and the number of robots in the working chamber of the robot in the atmospheric atmosphere environment can be set according to actual needs. For example, in the above embodiment, the second support member 22 has two slots, but in practical applications, the second support member 22 has only one slot sufficient to complete the above-described substrate processing. In this case, in the step shown in FIG. 3b, the second robot 52 first transfers the unprocessed substrate W3 in the slot of the second support member 22 to the corresponding vacuum processing chamber of the vacuum processing environment, and then A robot 51 then places the processed substrate W1'' that it has picked up into the slot of the second support member 22. In the step shown in FIG. 3d, the third robot 41 first picks up the first chamber-processed substrate W1'' in the slot of the second support member 22 and transmits it to an atmospheric atmosphere such as a storage box, and then The four robots 42 then place the untreated substrate W4 in the atmosphere environment in the slot of the second support member 22.

另一方面,當第二支撐件22具有兩個插槽時,大氣氣氛環境的機械手工作腔40內可僅包括一個機械手,在圖3d所示步驟中,這一大氣氣氛環境側的機械手先將大氣氣氛環境中的未處理基片W4置於第二支撐件22的上層插槽221上,再拾取第二支撐件22的下層插槽222中的經第一室處理的基片W1''並傳送至大氣氣氛環境如存儲盒中。On the other hand, when the second support member 22 has two slots, the robotic working chamber 40 of the atmospheric atmosphere environment may include only one robot. In the step shown in Fig. 3d, the machine on the atmospheric atmosphere environment side The hand first places the untreated substrate W4 in the atmospheric atmosphere on the upper slot 221 of the second support member 22, and then picks up the first chamber-processed substrate W1' in the lower slot 222 of the second support member 22. 'And transfer to an atmospheric atmosphere such as a storage box.

圖4和圖5顯示為本發明另一實施例的雙真空鎖系統的剖視圖及俯視圖。在本實施例中,真空鎖系統1的數量為2個,這兩個真空鎖系統1相鄰並行排列。真空處理腔2和兩個真空鎖系統1耦接至真空機械手工作腔50(或基片搬送室)。在本實施例中,真空機械手工作腔50具有5個側邊,其中2個相鄰側邊分別耦接2個真空鎖系統1,剩下3個側邊每個連接一對真空處理腔2。兩個真空鎖系統1的另一側經大氣環境機械手工作腔40連接至基片存儲盒。每一個真空鎖系統的結構與上述實施例相同,在此不另作贅述。但需特別注意的是,這兩個真空鎖系統的第一室11共用排氣裝置112,可採用分離的反應氣體分配組成、分離的RF射頻源或其他工藝參數,從而兩個第一室11相當於形成一個一體的電漿體處理腔。由於共用了一些設備和資源,如排氣裝置和反應氣體等,雙真空鎖系統能夠同時一次處理兩片基片,能夠有效改善低產能及高生產成本的缺陷。4 and 5 show a cross-sectional view and a plan view of a dual vacuum lock system in accordance with another embodiment of the present invention. In the present embodiment, the number of the vacuum lock systems 1 is two, and the two vacuum lock systems 1 are arranged adjacent to each other in parallel. The vacuum processing chamber 2 and the two vacuum lock systems 1 are coupled to a vacuum robot working chamber 50 (or a substrate transfer chamber). In this embodiment, the vacuum manipulator working chamber 50 has five sides, wherein two adjacent sides are respectively coupled to two vacuum lock systems 1, and the remaining three sides are each connected to a pair of vacuum processing chambers 2 . The other side of the two vacuum lock systems 1 is coupled to the substrate storage cassette via an atmospheric environment robotic working chamber 40. The structure of each vacuum lock system is the same as that of the above embodiment, and will not be further described herein. However, it should be noted that the first chamber 11 of the two vacuum lock systems share the exhaust device 112, and the separated reaction gas distribution composition, the separated RF RF source or other process parameters may be used, so that the two first chambers 11 It is equivalent to forming an integrated plasma processing chamber. By sharing some equipment and resources, such as exhaust and reactive gases, the dual vacuum lock system can process two substrates at the same time, which can effectively improve the defects of low productivity and high production cost.

需要說明的是,對於雙真空鎖系統,真空環境的機械手工作腔50的第一機械手51和第二機械手52均為雙臂機械手,從而可同時傳送兩片基片。具體的,在圖3a所示步驟中,雙臂第一機械手51從兩個真空鎖系統的第一支撐件上同時分別拾取基片W1'',雙臂第二機械手52則同時將真空處理環境處理的兩片基片W2'分別放置在兩個第一支撐件21上。在圖3b所示的步驟中,雙臂第一機械手51同時將其拾取的基片W1''分別放置於兩個第二支撐件22的下層插槽222內,雙臂第二機械手52則同時拾取兩個上層插槽221中的未處理基片W3並傳送至真空處理環境的相應真空處理腔內。由此,實現在兩個真空鎖系統的基片支撐組件和真空處理環境之間,以及在兩個基片支撐組件的第一支撐件和第二支撐件之間同步進行基片傳送動作。第三機械手41和第四機械手42則可以是單臂或雙臂機械手,此處不加以限制。It should be noted that, for the double vacuum lock system, the first robot 51 and the second robot 52 of the robot working chamber 50 in the vacuum environment are both dual-arm robots, so that two substrates can be simultaneously transported. Specifically, in the step shown in FIG. 3a, the two-arm first robot 51 simultaneously picks up the substrate W1'' from the first support members of the two vacuum lock systems, and the second-arm second-hand robot 52 simultaneously vacuums. The two substrates W2' treated in the processing environment are placed on the two first supports 21, respectively. In the step shown in FIG. 3b, the two-arm first robot 51 simultaneously places the substrate W1'' picked up in the lower slot 222 of the two second support members 22, and the second robot 52 of the two arms. The unprocessed substrate W3 of the two upper slots 221 is then picked up and transferred to the corresponding vacuum processing chamber of the vacuum processing environment. Thereby, the substrate transfer operation is effected between the substrate support assembly of the two vacuum lock systems and the vacuum processing environment, and between the first support member and the second support member of the two substrate support assemblies. The third robot 41 and the fourth robot 42 may be single-arm or dual-arm robots, which are not limited herein.

根據本發明的另一方面,提供了具有上述真空鎖系統或雙真空鎖系統的真空處理系統。真空處理系統除了具有至少一個真空鎖系統外,還包括真空環境中的對基片進行處理的至少一個真空處理腔(如圖5中的真空處理腔2)以及在真空環境中與至少一個真空處理腔相連的真空傳送室或真空機械手工作腔(如圖5中的機械手工作腔50)。每一個真空鎖系統一側通過真空機械手工作腔與至少一個真空處理腔相連,另一側通過大氣氣氛環境中的機械手工作腔與大氣氣氛環境如基片存儲盒相連。According to another aspect of the invention, a vacuum processing system having the above described vacuum lock system or dual vacuum lock system is provided. The vacuum processing system includes, in addition to at least one vacuum lock system, at least one vacuum processing chamber (such as vacuum processing chamber 2 in FIG. 5) for processing the substrate in a vacuum environment and at least one vacuum processing in a vacuum environment. The chamber is connected to a vacuum transfer chamber or a vacuum robot working chamber (such as the robot working chamber 50 in FIG. 5). One side of each vacuum lock system is connected to at least one vacuum processing chamber through a vacuum robot working chamber, and the other side is connected to an atmospheric atmosphere environment such as a substrate storage case through a robot working chamber in an atmospheric atmosphere environment.

根據本發明的另一方面,提供了一種利用上述單一真空鎖系統或雙真空鎖系統進行的基片處理方法。圖3a~圖3e顯示的是上述真空鎖系統對多片基片進行處理的實施例,接下來將結合圖6以單一真空鎖系統對一片基片處理為例說明本發明的基片處理方法。該基片處理方法包括以下步驟:According to another aspect of the present invention, a substrate processing method using the above single vacuum lock system or double vacuum lock system is provided. 3a to 3e show an embodiment in which the above-described vacuum lock system processes a plurality of substrates. Next, a substrate processing method of the present invention will be described by taking a single vacuum lock system to treat a substrate as an example. The substrate processing method includes the following steps:

步驟S1:將基片支撐組件下降至第二位置,將真空處理環境處理的基片放置在第一支撐件上。本步驟中,通過第二機械手將真空處理環境處理完畢的基片傳送到第一支撐件上,以在後續步驟中對該基片進一步進行電漿體處理。本步驟中,通過第二室和第一室的排氣裝置將第二室和第一室保持在與真空處理環境均衡的真空環境。Step S1: Lowering the substrate supporting assembly to the second position, and placing the vacuum processing environment-treated substrate on the first supporting member. In this step, the vacuum processed environment-treated substrate is transferred to the first support by a second robot to further perform plasma treatment on the substrate in a subsequent step. In this step, the second chamber and the first chamber are maintained in a vacuum environment equal to the vacuum processing environment by the exhausting means of the second chamber and the first chamber.

步驟S2:將基片支撐組件上升至第一位置,通過真空鎖系統的第一室對放置在其中的經真空處理環境處理的基片進行電漿體處理。本步驟中,通過第一室的排氣裝置將第一室保持在符合工藝條件要求的真空環境,必要時通過基片支撐組件的加熱器對基片加熱。Step S2: Raising the substrate support assembly to the first position, and subjecting the vacuum treated environment treated substrate placed therein to plasma treatment through the first chamber of the vacuum lock system. In this step, the first chamber is maintained in a vacuum environment conforming to the process conditions by the venting means of the first chamber, and the substrate is heated by a heater of the substrate supporting assembly as necessary.

步驟S3:將基片支撐組件下降至第二位置;拾取第一支撐件上經第一室處理完成的基片。本步驟中,通過第一機械手進行經第一室處理的基片的拾取動作。此時,通過第二室和第一室保持在真空環境。Step S3: lowering the substrate supporting assembly to the second position; picking up the substrate processed by the first chamber on the first supporting member. In this step, the pickup operation of the substrate processed by the first chamber is performed by the first robot. At this time, the vacuum is left in the vacuum through the second chamber and the first chamber.

步驟S4:將基片支撐組件上升至第一位置,將經第一室處理完成的基片通過第二室傳送至大氣氣氛環境,通過第二室將來自大氣氣氛環境的另一基片傳送至真空處理環境。Step S4: raising the substrate supporting assembly to the first position, transferring the substrate processed by the first chamber to the atmospheric atmosphere through the second chamber, and transferring another substrate from the atmospheric atmosphere to the second chamber through the second chamber Vacuum treatment environment.

步驟S4中將基片支撐組件上升至第一位置後的基片傳送步驟包括:The substrate transfer step after the substrate supporting assembly is raised to the first position in step S4 includes:

首先,通過第一機械手將經其已拾取的經第一室處理的基片放置於第二支撐件。First, the first chamber-treated substrate that has been picked up by it is placed on the second support by the first robot.

然後,切換第二室內為大氣壓環境,之後通過第三機械手拾取該第二支撐件上的經第一室處理的基片並傳送至大氣氣氛環境,通過第四機械手將來自大氣氣氛環境的另一未處理基片放置於第二支撐件。Then, the second chamber is switched to an atmospheric environment, and then the first chamber-processed substrate on the second support is picked up by a third robot and transferred to an atmospheric atmosphere, and the fourth robot is used to bring the atmosphere from the atmosphere. Another untreated substrate is placed on the second support.

接下來,切換第二室內為真空環境。Next, the second chamber is switched to a vacuum environment.

優選地,第二支撐件具有上下兩層插槽,將來自大氣氣氛環境的未處理基片放置於第二支撐件的其中一層插槽,將經第一室處理完畢的基片放置於第二支撐件的另一層插槽。Preferably, the second support member has two upper and lower slots, the unprocessed substrate from the atmospheric atmosphere is placed in one of the slots of the second support, and the substrate processed through the first chamber is placed on the second Another layer of slots for the support.

優選地,第二室內的環境切換均包括兩個步驟,首先將第二室側壁的兩個開口均密封,進行氣體通入或氣體排出步驟,之後相應將與大氣氣氛環境或與真空處理環境連通的開口打開保持另一個開口密封,從而實現第二室內的環境切換。Preferably, the environmental switching of the second chamber comprises two steps. First, the two openings of the sidewall of the second chamber are sealed, and a gas inflow or gas discharge step is performed, and then the air atmosphere environment or the vacuum processing environment is correspondingly connected. The opening of the opening opens to keep the other opening sealed, thereby enabling environmental switching of the second chamber.

上述步驟完成了一片基片的處理過程。在實際應用中,如圖3a~3e所示,為提高工作效率,多片不同基片同時由真空鎖系統及真空處理環境進行處理,因此步驟S1中第二機械手將真空處理環境處理的基片W2'放置在第一支撐件上之前,先要由第一機械手拾取第一支撐件上的另一已經由第一室處理的基片W1''。同樣的,在步驟S3中第一機械手拾取基片W2'經第一室處理後的W2''之後,第二機械手將真空處理環境處理的另一基片W3'放置在第一支撐件上。而在步驟S4中,第一機械手繼續將拾取的基片W2''傳送到第二支撐件的同時,第二機械手也可將第二支撐件上另一來自大氣氣氛環境的未處理基片W4傳送到真空處理環境中。The above steps complete the processing of a piece of substrate. In practical applications, as shown in Figures 3a to 3e, in order to improve the working efficiency, a plurality of different substrates are simultaneously processed by the vacuum lock system and the vacuum processing environment, so the second robot in step S1 will process the vacuum processing environment. Before the sheet W2' is placed on the first support, another substrate W1" that has been processed by the first chamber on the first support is picked up by the first robot. Similarly, after the first robot picks up the W2'' of the substrate W2' processed by the first chamber in step S3, the second robot places another substrate W3' processed by the vacuum processing environment on the first support. on. In step S4, while the first robot continues to transfer the picked substrate W2" to the second support, the second robot can also apply another untreated base from the atmosphere to the second support. Sheet W4 is transferred to a vacuum processing environment.

若利用雙真空鎖系統進行基片處理,則第一機械手和第二機械手均為雙臂機械手,以在上述步驟S1、S3和步驟S4中分別在兩個基片支撐組件和真空處理環境之間,以及兩個基片支撐組件的第一和第二支撐件之間,進行同步的基片傳送動作。If the substrate processing is performed by the double vacuum lock system, the first robot and the second robot are both two-arm robots, respectively, in the above steps S1, S3 and S4 in the two substrate support assemblies and vacuum processing A synchronized substrate transfer action is performed between the environments and between the first and second supports of the two substrate support assemblies.

雖然本發明已以較佳實施例揭示如上,然所述諸多實施例僅為了便於說明而舉例而已,並非用以限定本發明,本領域中具有通常知識者在不脫離本發明精神和範圍的前提下可作若干的更動與潤飾,本發明所主張的保護範圍應以申請專利範圍所述為准。The present invention has been described in the above preferred embodiments, and the present invention is not intended to limit the scope of the present invention, and is not intended to limit the scope of the invention. A number of changes and refinements may be made, and the scope of protection claimed by the present invention shall be as described in the scope of the patent application.

1‧‧‧真空鎖系統
10‧‧‧腔室主體
11‧‧‧第一室
112、53‧‧‧排氣裝置
12‧‧‧第二室
121‧‧‧開口
123、124‧‧‧門閥機構
125‧‧‧排氣裝置
2‧‧‧真空處理腔
20‧‧‧基片支撐組件
21‧‧‧第一支撐件
22‧‧‧第二支撐件
221、222‧‧‧插槽
23‧‧‧隔離板
25‧‧‧密封圈
30‧‧‧升降機構
31‧‧‧升降銷組件
40、50‧‧‧機械手工作腔
41‧‧‧第三機械手
42‧‧‧第四機械手
51‧‧‧第一機械手
52‧‧‧第二機械手
P‧‧‧電漿體處理
S1、S2、S3、S4‧‧‧步驟
W1、W1''、W2、W2'、W2''、W3、W3'、W4、Wi、Wi'、Wi''‧‧‧基片
1‧‧‧Vacuum lock system
10‧‧‧ chamber body
11‧‧‧First Room
112, 53‧‧‧ exhaust
12‧‧‧ second room
121‧‧‧ openings
123, 124‧‧ ‧ door valve mechanism
125‧‧‧Exhaust device
2‧‧‧ Vacuum processing chamber
20‧‧‧Substrate support assembly
21‧‧‧First support
22‧‧‧second support
221, 222‧‧‧ slots
23‧‧‧Isolation board
25‧‧‧ sealing ring
30‧‧‧ Lifting mechanism
31‧‧‧ Lifting pin assembly
40, 50‧‧‧manipulator working chamber
41‧‧‧third robot
42‧‧‧fourth manipulator
51‧‧‧First robot
52‧‧‧second robot
P‧‧‧Plastic treatment
S1, S2, S3, S4‧‧‧ steps
W1, W1'', W2, W2', W2'', W3, W3', W4, Wi, Wi', Wi''‧‧‧ substrates

圖1為本發明一實施例的真空鎖系統當基片支撐組件位於第二位置時的結構示意圖; 圖2為本發明一實施例的真空鎖系統當基片支撐組件位於第一位置時的結構示意圖; 圖3a~3e為本發明一實施例基片傳送時真空鎖系統的結構示意圖; 圖4為本發明一實施例雙真空鎖系統的結構示意圖; 圖5為本發明一實施例雙真空鎖系統的俯視圖; 圖6為本發明一實施例基片處理方法的流程圖。1 is a schematic structural view of a vacuum lock system when a substrate support assembly is in a second position according to an embodiment of the present invention; FIG. 2 is a view showing a structure of a vacuum lock system when a substrate support assembly is in a first position according to an embodiment of the present invention; 3a-3e are schematic structural views of a vacuum lock system for transferring a substrate according to an embodiment of the present invention; FIG. 4 is a schematic structural view of a double vacuum lock system according to an embodiment of the present invention; FIG. 5 is a double vacuum lock according to an embodiment of the present invention; A top view of the system; Fig. 6 is a flow chart of a method of processing a substrate according to an embodiment of the present invention.

10‧‧‧腔室主體 10‧‧‧ chamber body

11‧‧‧第一室 11‧‧‧First Room

112‧‧‧排氣裝置 112‧‧‧Exhaust device

12‧‧‧第二室 12‧‧‧ second room

121、122‧‧‧開口 121, 122‧‧‧ openings

123、124‧‧‧門閥機構 123, 124‧‧ ‧ door valve mechanism

125‧‧‧排氣裝置 125‧‧‧Exhaust device

20‧‧‧基片支撐組件 20‧‧‧Substrate support assembly

21‧‧‧第一支撐件 21‧‧‧First support

22‧‧‧第二支撐件 22‧‧‧second support

221、222‧‧‧插槽 221, 222‧‧‧ slots

23‧‧‧隔離板 23‧‧‧Isolation board

25‧‧‧密封圈 25‧‧‧ sealing ring

30‧‧‧升降機構 30‧‧‧ Lifting mechanism

31‧‧‧升降銷組件 31‧‧‧ Lifting pin assembly

W1、W2‧‧‧基片 W1, W2‧‧‧ substrates

Claims (15)

一種傳送基片的真空鎖系統,包含: 腔室主體,其包括垂直堆疊的第一室和第二室,其中所述第二室側壁上形成可選擇性地連接至大氣氣氛環境或真空處理環境的兩個開口,所述第一室用於對置於其中的基片進行電漿體處理,其具有與所述第二室連通的底部開口; 基片支撐組件,以可升降的方式設置於所述腔室主體中,其包括垂直堆疊的分別用於承載基片的第一支撐件和第二支撐件,以及位於所述第一支撐件和第二支撐件之間的、尺寸大於所述第一支撐件的隔離板; 升降機構,用於驅動所述基片支撐組件在一第一位置和一第二位置之間移動,所述第一位置為所述隔離板密封所述第一室的底部開口、所述第一支撐件置於所述第一室內且所述第二支撐件對應所述第二室側壁上形成的兩個開口處,所述第二位置為所述第一支撐件對應所述第二室側壁上形成的兩個開口處。A vacuum lock system for transferring a substrate, comprising: a chamber body including a vertically stacked first chamber and a second chamber, wherein the second chamber sidewall is formed to be selectively connectable to an atmospheric atmosphere or a vacuum processing environment Two openings, the first chamber is for plasma treatment of the substrate placed therein, and has a bottom opening communicating with the second chamber; the substrate supporting assembly is disposed in a liftable manner The chamber body includes vertically stacked first and second supports for carrying the substrate, respectively, and a dimension between the first support and the second support is larger than the a spacer of the first support; a lifting mechanism for driving the substrate support assembly to move between a first position and a second position, the first position sealing the first chamber a bottom opening, the first support is placed in the first chamber and the second support corresponds to two openings formed on the sidewall of the second chamber, the second position is the first support Corresponding to the second chamber side wall Into the two openings. 如請求項1所述的真空鎖系統,其中當所述基片支撐組件位於所述第一位置時,通過所述第二室將經所述第一室處理的基片傳送至所述大氣氣氛環境以及將來自所述大氣氣氛環境的基片傳送至所述真空處理環境;當所述基片支撐組件位於所述第二位置時,將所述第一支撐件上完成電漿體處理的基片移出並將經所述真空處理環境處理的基片傳送至所述第一支撐件。The vacuum lock system of claim 1, wherein the substrate processed by the first chamber is transferred to the atmosphere through the second chamber when the substrate support assembly is in the first position Environment and transferring a substrate from the atmospheric atmosphere environment to the vacuum processing environment; when the substrate support assembly is in the second position, completing the base of the plasma treatment on the first support The sheet is removed and the substrate treated by the vacuum processing environment is transferred to the first support. 如請求項1所述的真空鎖系統,還包括由所述升降機構驅動且可相對所述基片支撐組件移動的升降銷組件;當所述基片支撐組件位於所述第二位置時,所述升降銷組件下端抵靠於所述第二室底部、上端位於所述第一支撐件上方以抬起其上的基片,當所述基片支撐組件位於所述第一位置時,所述升降銷組件下端懸空、上端位於所述第一支撐件下方。The vacuum lock system of claim 1, further comprising a lift pin assembly driven by the lift mechanism and movable relative to the substrate support assembly; when the substrate support assembly is in the second position, The lower end of the lift pin assembly abuts against the bottom of the second chamber, and the upper end is located above the first support to lift the substrate thereon, when the substrate support assembly is in the first position, The lower end of the lift pin assembly is suspended, and the upper end is located below the first support member. 如請求項1所述的真空鎖系統,其中所述第二室具有以開閉的方式對所述兩個開口進行密封的門閥機構,以使所述第二室可選擇性地連接至大氣氣氛環境或真空處理環境。The vacuum lock system of claim 1, wherein the second chamber has a gate valve mechanism that seals the two openings in an open and closed manner to selectively connect the second chamber to an atmospheric atmosphere environment Or vacuum processing environment. 如請求項4所述的真空鎖系統,其中所述第一室和第二室各自具有排氣裝置以獨立控制其中的壓力,使得所述第一室在真空環境下對其中的基片進行電漿體處理,所述第二室在向所述大氣氣氛環境傳送基片時切換為大氣氣壓環境,在向所述真空處理環境傳送基片時切換為真空環境。The vacuum lock system of claim 4, wherein the first chamber and the second chamber each have an exhaust device to independently control a pressure therein such that the first chamber energizes a substrate therein in a vacuum environment In the slurry treatment, the second chamber is switched to an atmospheric pressure environment when the substrate is transferred to the atmospheric atmosphere environment, and switched to a vacuum environment when the substrate is transferred to the vacuum processing environment. 如請求項1所述的真空鎖系統,其中所述第一支撐件具有加熱器,用於加熱放置於所述第一支撐件上的基片;所述加熱器通過一絕熱件與所述隔離板隔離。A vacuum lock system according to claim 1, wherein said first support member has a heater for heating a substrate placed on said first support member; said heater is insulated from said substrate by a heat insulating member Board isolation. 如請求項1所述的真空鎖系統,其中所述第一室為祛光阻電漿體處理室。The vacuum lock system of claim 1, wherein the first chamber is a tantalum photoresist plasma processing chamber. 如請求項1所述的真空鎖系統,其中所述第二支撐件具有上下設置的兩層插槽,以分別放置兩片基片,其中一層插槽用於放置來自所述大氣氣氛環境的基片,另一層插槽用於放置經所述第一室處理完畢的基片。The vacuum lock system of claim 1, wherein the second support member has two layers of slots disposed above and below to respectively place two substrates, wherein one of the slots is for placing a base from the atmosphere atmosphere environment. A sheet, another layer of slots for placing the substrate processed through the first chamber. 如請求項1所述的真空鎖系統,其中所述真空鎖系統為兩個,兩個所述真空鎖系統相鄰並行排列且其第一室共用排氣裝置。The vacuum lock system of claim 1, wherein the vacuum lock system is two, and the two vacuum lock systems are adjacently arranged in parallel and the first chamber shares an exhaust device. 如請求項1-9任一項所述的真空鎖系統,其中所述真空鎖系統一側與真空環境的機械手工作腔相連,另一側與大氣氣氛環境中的機械手工作腔相連。The vacuum lock system of any of claims 1-9, wherein one side of the vacuum lock system is coupled to a robotic working chamber of a vacuum environment and the other side is coupled to a robotic working chamber in an atmospheric atmosphere environment. 如請求項10所述的真空鎖系統,其中所述真空環境的機械手工作腔內包括第一機械手和第二機械手,所述第一機械手和第二機械手用於在所述基片支撐組件和所述真空處理環境之間,以及在所述基片支撐組件的第一支撐件和第二支撐件之間傳送基片;所述大氣氣氛環境中的機械手工作腔包括第三機械手和第四機械手,所述第三機械手和所述第四機械手用於在所述第二支撐件和所述大氣氣氛環境之間傳送基片。The vacuum lock system of claim 10, wherein the robotic working chamber of the vacuum environment includes a first robot and a second robot, the first robot and the second robot being used in the base Transferring a substrate between the sheet support assembly and the vacuum processing environment, and between the first support member and the second support member of the substrate support assembly; the robotic working chamber in the atmospheric atmosphere environment includes a third A robot and a fourth robot, the third robot and the fourth robot for transferring a substrate between the second support and the atmosphere. 如請求項11所述的真空鎖系統,其中當所述真空鎖系統為兩個時,所述第一機械手和所述第二機械手均為雙臂機械手。The vacuum lock system of claim 11, wherein when the vacuum lock system is two, the first robot and the second robot are both dual-arm robots. 一種基片處理方法,為利用如權利要求1~8任一項所述的真空鎖系統所進行的基片處理方法,其包括: 步驟S1:將所述基片支撐組件下降至所述第二位置,將所述真空處理環境處理的基片放置在所述第一支撐件上; 步驟S2:將所述基片支撐組件上升至所述第一位置,通過所述真空鎖系統的第一室對放置在其中的經所述真空處理環境處理的基片進行電漿體處理; 步驟S3:將所述基片支撐組件下降至所述第二位置;拾取所述第一支撐件上經所述第一室處理完成的基片傳送至所述第二支撐件; 步驟S4:將所述基片支撐組件上升至所述第一位置,將經所述第一室處理完成的基片通過所述真空鎖系統的第二室傳送至所述大氣氣氛環境,通過所述真空鎖系統的第二室將來自所述大氣氣氛環境的另一基片傳送至所述真空處理環境。A substrate processing method for a substrate processing method using the vacuum lock system according to any one of claims 1 to 8, comprising: step S1: lowering the substrate supporting assembly to the second Positioning the substrate processed by the vacuum processing environment on the first support; Step S2: raising the substrate support assembly to the first position, through the first chamber of the vacuum lock system Performing a plasma treatment on the substrate treated by the vacuum processing environment placed therein; Step S3: lowering the substrate support assembly to the second position; picking up the first support member Transferring the first chamber processed substrate to the second support; Step S4: raising the substrate support assembly to the first position, passing the substrate processed by the first chamber through the A second chamber of the vacuum lock system is transferred to the atmospheric atmosphere environment, and another substrate from the atmospheric atmosphere environment is transferred to the vacuum processing environment through a second chamber of the vacuum lock system. 如請求項13所述的基片處理方法,其中所述步驟S1和S3中所述第二室內為真空環境,其中步驟S1中,通過第二機械手將所述真空處理環境處理的基片放置在所述第一支撐件上;步驟S3中,通過第一機械手拾取所述第一支撐件上的經所述第一室處理完成的基片;步驟S4中將經所述第一室處理完成的基片傳送至所述大氣氣氛環境以及通過所述真空鎖系統的第二室將來自所述大氣氣氛環境的另一基片傳送至所述真空處理環境的步驟包括:通過所述第一機械手將經其已拾取的經所述第一室處理完成的基片放置於所述第二支撐件;切換所述第二室內為大氣壓環境,之後通過第三機械手拾取該第二支撐件上的經所述第一室處理完畢的基片並傳送至所述大氣氣氛環境,通過第四機械手將來自所述大氣氣氛環境的另一未處理基片放置於所述第二支撐件;切換所述第二室內為真空環境。The substrate processing method of claim 13, wherein the second chamber in the steps S1 and S3 is a vacuum environment, wherein in the step S1, the substrate processed by the vacuum processing environment is placed by a second robot On the first support member; in step S3, the substrate processed by the first chamber on the first support member is picked up by the first robot; the first chamber is processed in step S4. The step of transferring the completed substrate to the atmospheric atmosphere environment and transferring another substrate from the atmospheric atmosphere environment to the vacuum processing environment through the second chamber of the vacuum lock system includes: passing the first The robot places the substrate that has been processed by the first chamber and is processed by the second support member; the second chamber is switched to an atmospheric environment, and then the second support member is picked up by the third robot. Passing the substrate processed by the first chamber and transferring to the atmospheric atmosphere environment, and placing another unprocessed substrate from the atmospheric atmosphere environment on the second support member by a fourth robot; Switching the second room Vacuum environment. 如請求項14所述的基片處理方法,其中所述真空鎖系統為兩個,兩個所述真空鎖系統相鄰並行排列且其第一室共用排氣裝置,所述第一機械手和所述第二機械手均為雙臂機械手,以在步驟S1,S3和S4中分別在兩個所述真空鎖系統的基片支撐組件和所述真空處理環境之間,以及在兩個所述基片支撐組件的第一支撐件和第二支撐件之間同步進行基片傳送動作。The substrate processing method of claim 14, wherein the vacuum lock system is two, two of the vacuum lock systems are adjacently arranged in parallel and a first chamber thereof shares an exhaust device, the first robot and The second robots are both dual-arm manipulators in steps S1, S3 and S4 between the substrate support assembly of the two vacuum lock systems and the vacuum processing environment, and at the two The substrate transfer operation is performed synchronously between the first support member and the second support member of the substrate supporting assembly.
TW103145594A 2014-10-17 2014-12-25 Vacuum lock system and substrate processing method TW201616595A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410553794.4A CN105575848B (en) 2014-10-17 2014-10-17 Vacuum lock system and processing method for substrate

Publications (2)

Publication Number Publication Date
TW201616595A true TW201616595A (en) 2016-05-01
TWI563588B TWI563588B (en) 2016-12-21

Family

ID=55885845

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103145594A TW201616595A (en) 2014-10-17 2014-12-25 Vacuum lock system and substrate processing method

Country Status (2)

Country Link
CN (1) CN105575848B (en)
TW (1) TW201616595A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI827654B (en) * 2018-08-28 2024-01-01 美商蘭姆研究公司 Confinement ring for substrate processing system and method of using the confinement ring in the substrate processing system

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107611054B (en) * 2016-07-12 2020-02-14 北京北方华创微电子装备有限公司 Reaction chamber
CN108470704B (en) * 2017-02-23 2021-01-29 北京北方华创微电子装备有限公司 Pass piece cavity and semiconductor processing equipment
CN111373519B (en) * 2017-11-16 2021-11-23 应用材料公司 High-pressure steam annealing treatment equipment
CN112725747B (en) * 2019-10-29 2022-10-18 中国电子科技集团公司第四十八研究所 Magnetron sputtering machine
CN112779510B (en) * 2019-11-11 2022-11-11 中国电子科技集团公司第四十八研究所 Magnetron sputtering coating equipment
CN113035752B (en) * 2021-03-05 2022-11-11 上海广川科技有限公司 Load lock device and substrate conveying method
CN114695222B (en) * 2022-06-02 2022-08-16 江苏邑文微电子科技有限公司 Wafer transfer system and method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6750155B2 (en) * 2001-08-08 2004-06-15 Lam Research Corporation Methods to minimize moisture condensation over a substrate in a rapid cycle chamber
JP4520677B2 (en) * 2001-08-31 2010-08-11 キヤノンアネルバ株式会社 Multi-chamber sputtering equipment
JP4540953B2 (en) * 2003-08-28 2010-09-08 キヤノンアネルバ株式会社 Substrate heating apparatus and multi-chamber substrate processing apparatus
JP4524132B2 (en) * 2004-03-30 2010-08-11 東京エレクトロン株式会社 Vacuum processing equipment
DE102005039452B4 (en) * 2005-08-18 2007-08-09 Asys Automatic Systems Gmbh & Co. Kg Transfer device in handling or processing systems for large-area substrates
TWI413153B (en) * 2006-01-27 2013-10-21 Advanced Micro Fab Equip Inc Semiconductor processing chamber
JP5108557B2 (en) * 2008-02-27 2012-12-26 東京エレクトロン株式会社 Load lock device and substrate cooling method
US20110064545A1 (en) * 2009-09-16 2011-03-17 Applied Materials, Inc. Substrate transfer mechanism with preheating features

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI827654B (en) * 2018-08-28 2024-01-01 美商蘭姆研究公司 Confinement ring for substrate processing system and method of using the confinement ring in the substrate processing system

Also Published As

Publication number Publication date
TWI563588B (en) 2016-12-21
CN105575848A (en) 2016-05-11
CN105575848B (en) 2018-08-28

Similar Documents

Publication Publication Date Title
TW201616595A (en) Vacuum lock system and substrate processing method
TWI585025B (en) Vacuum lock system and its handling method for substrate
KR102534391B1 (en) Buffer station for thermal control of semiconductor substrates transferred therethrough and method of transferring semiconductor substrates
TWI773092B (en) Wafer transport assembly with integrated buffers
JP7254924B2 (en) Systems and methods for processing workpieces
KR200491849Y1 (en) Load lock chamber with slit valve doors
KR100902330B1 (en) Apparatus for Semiconductor Process
JPH10107121A (en) Substrate processing device, substrate transfer machine and substrate transfer device
JP7106681B2 (en) Dual load lock chamber
JP2008060577A (en) Substrate-processing apparatus having buffer mechanism, and substrate-transfer apparatus
JPH10242234A (en) Manufacturing apparatus
TWI762518B (en) Systems and methods for workpiece processing
WO2012003715A1 (en) Mocvd system having multiple epitaxial reactor chambers and operation method thereof
JP7345334B2 (en) Etching method and substrate processing system
JP2019520701A (en) 12-sided transfer chamber, and processing system having such a transfer chamber
JP4531247B2 (en) Vacuum processing equipment
JP7307240B1 (en) Vacuum wafer transfer system
CN106033737B (en) Vacuum lock system and substrate transfer approach
JP7442349B2 (en) Board transfer system and load lock module
JP5892828B2 (en) Vacuum processing equipment
KR100749755B1 (en) Apparatus for processing semiconductor wafer
KR102318392B1 (en) Apparatus for treating substrate and method for treating substrate
JPH054282Y2 (en)
KR100843103B1 (en) Apparatus for Semiconductor Process
JP4356480B2 (en) Transport equipment and semiconductor manufacturing equipment