TWI413153B - Semiconductor processing chamber - Google Patents

Semiconductor processing chamber Download PDF

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TWI413153B
TWI413153B TW98125566A TW98125566A TWI413153B TW I413153 B TWI413153 B TW I413153B TW 98125566 A TW98125566 A TW 98125566A TW 98125566 A TW98125566 A TW 98125566A TW I413153 B TWI413153 B TW I413153B
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chamber
processing
workpiece
transfer
processing chamber
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TW98125566A
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TW200949899A (en
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Steve Chen
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Advanced Micro Fab Equip Inc
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Abstract

A semiconductor processing system comprising load lock, transfer chamber and one or several processing chambers. The transfer chamber is between load lock and processing chambers, and processing chambers can be placed around the transfer chamber. The transfer chamber is equipped with transferring apparatus. This invention can complete the loading and exchanging job of workpieces only by the movements of transferring apparatus, and without the vertical movements of lad lock or processing chambers. Thus the loading and exchanging of workpieces can be faster and cheaper, and the throughput can be raised. In this invention, a processing chamber with specially designed intake and exhaust system is published. With reactant gas screens forming among the processing stations in the processing chamber, the uniformity of the processing stations can be improved, thus the cross-interference of reactant gases between different processing stations can be avoided.

Description

半導體處理腔室Semiconductor processing chamber

本發明係關於半導體製造設備技術領域,尤其係關於一種半導體製程處理系統及其處理方法。The present invention relates to the field of semiconductor manufacturing equipment, and more particularly to a semiconductor processing system and a processing method thereof.

目前有兩種常用的半導體製程處理系統,一種係對工件進行批量處理之系統,而另一種則對工件進行單片處理。在批量處理系統中,多片工件被同時水平地或垂直地置放並進行處理。There are currently two commonly used semiconductor process processing systems, one for batch processing of workpieces and the other for single piece processing of workpieces. In a batch processing system, multiple pieces of workpiece are placed and processed horizontally or vertically simultaneously.

由於裝置內同時處理多片工件,因此工件之間的間距極為有限。此需要以低氣壓處理來消除氣體壓力梯度,一般而言,在工件間距大於其厚度四分之一的情況下,壓力應當小於500毫托,而此時之沉積速率會小於100A/min。此意謂需要更長的加工時間。Since multiple pieces of workpiece are processed simultaneously in the device, the spacing between the workpieces is extremely limited. This requires low pressure treatment to eliminate the gas pressure gradient. In general, where the workpiece spacing is greater than one quarter of its thickness, the pressure should be less than 500 mTorr, and the deposition rate at this time will be less than 100 A/min. This means that longer processing time is required.

雖然單片處理系統在產品處理均一性、熱效應以及單批加工速度方面具有優勢,但其低產能以及昂貴的生產成本顯然係難以克服的致命缺陷。While monolithic processing systems have advantages in product handling uniformity, thermal effects, and single batch processing speeds, their low throughput and costly production costs are clearly fatal defects that are difficult to overcome.

為解決以上問題美國專利第5855681號之背景部分提供了一種批量處理之系統。如圖12所示,此種批量處理系統101具有處理腔室102,處理腔室中102具有多個處理平臺103,如此處理腔室102就可同時一次處理多片工件,而不必考量工件之間的間距問題。In order to solve the above problem, the background portion of U.S. Patent No. 5,855,681 provides a system for batch processing. As shown in FIG. 12, such a batch processing system 101 has a processing chamber 102 having a plurality of processing platforms 103 in the processing chamber, such that the processing chamber 102 can simultaneously process a plurality of workpieces without having to consider between workpieces. The spacing problem.

但此類系統亦同樣存在某些問題,而影響工件的處理速度及品質,不能有效地進行大批量工件之同時處理。其中,主要影響處理品質的問題在於各個處理平臺之處理條件的均一性。處理條件之均一性主要有兩方面的影響,即反應氣體及溫度。一般若處理平臺之間密閉,則形成平臺之間的熱隔絕,各處理平臺之間的溫度均一難以控制;若處理平臺之間不密閉,則各處理平臺之間的反應氣體可能形成相互交互干擾,影響各處理平臺之間處理氣氛的均一性。However, such systems also have certain problems, which affect the processing speed and quality of the workpiece, and cannot effectively process large batches of workpieces at the same time. Among them, the main problem affecting the processing quality lies in the uniformity of the processing conditions of each processing platform. The homogeneity of the treatment conditions has two main effects, namely the reaction gas and temperature. Generally, if the processing platforms are sealed, heat isolation between the platforms is formed, and the temperature uniformity between the processing platforms is difficult to control; if the processing platforms are not sealed, the reaction gases between the processing platforms may form mutual interference. , affecting the uniformity of the processing atmosphere between the processing platforms.

因此,目前的包含多個處理平臺之處理腔室仍不能均一地進行大批量工件之同時處理。Therefore, the current processing chambers including multiple processing platforms are still unable to uniformly process large batches of workpieces at the same time.

此外,美國專利第6860965號提供了另一種工件批量處理系統。如圖13所示,該系統簡化傳送室111,實現機台較小的占地面積。但該系統裝載系統112複雜,工件裝載速度較慢,工序中需要留出一段時間用於等待工件之裝卸,影響生產效率。此需要提供一種快速的工件裝卸裝置及方法,以減少裝卸過程之等待時間,加快工件處理效率。In addition, U.S. Patent No. 6,860,965 provides another workpiece batch processing system. As shown in Figure 13, the system simplifies the transfer chamber 111 to achieve a smaller footprint. However, the system loading system 112 is complicated, the workpiece loading speed is slow, and it is necessary to leave a period of time in the process for waiting for the loading and unloading of the workpiece, which affects the production efficiency. There is a need to provide a fast workpiece handling device and method to reduce the waiting time of the loading and unloading process and speed up workpiece processing efficiency.

同時該專利中之工件處理裝置只能擁有一處理腔室113。因此減小了每一機台能夠同時處理的工件之數量,增加了生產成本。At the same time, the workpiece processing apparatus of this patent can only have one processing chamber 113. Therefore, the number of workpieces that can be processed simultaneously by each machine is reduced, and the production cost is increased.

除此以外,現有的工件批量處理裝置亦存在一共同問題,即機械結構複雜,不易維護,且傳送裝置在裝卸或交換工件時,傳送成本較高,使得單位產能下降。In addition, the existing workpiece batch processing device also has a common problem, that is, the mechanical structure is complicated and difficult to maintain, and when the conveying device is loaded or unloaded or exchanged, the transmission cost is high, and the unit productivity is lowered.

本發明之目的在於提供一種解決目前工件量產裝置可靠性不高、機械結構複雜之問題的半導體製程處理系統。SUMMARY OF THE INVENTION It is an object of the present invention to provide a semiconductor process processing system that solves the problems of low reliability and complicated mechanical structure of current mass production devices.

本發明係藉由以下技術方法實現:一種半導體製程處理系統,包括傳送室及處理腔室,傳送室設有傳送裝置,處理腔室具有裝卸口,該傳送裝置具有至少兩個可分別伸縮之傳送臂,該傳送臂可同時指向該處理腔室之同一裝卸口,並且可分別在垂直方向調整至正對該同一裝卸口之位置,以完成工件之取放。The invention is achieved by the following technical method: a semiconductor process processing system comprising a transfer chamber and a processing chamber, the transfer chamber being provided with a transfer device, the processing chamber having a loading and unloading port, the transfer device having at least two separately retractable transports The arm can be simultaneously pointed to the same loading and unloading port of the processing chamber, and can be respectively adjusted in the vertical direction to the position of the same loading and unloading port to complete the pick-and-place of the workpiece.

其中該等兩個傳送臂處於指向裝卸口之上下位置。該等兩個傳送臂可在傳送室及處理腔室之間的水平面上旋轉,並且傳送裝置之兩個傳送臂可隨傳送裝置之主軸上下移動;傳送裝置之每一傳送臂均可自由地前後伸縮。The two transfer arms are located above and below the loading and unloading port. The two transfer arms are rotatable on a horizontal plane between the transfer chamber and the processing chamber, and the two transfer arms of the transfer device can move up and down with the spindle of the transfer device; each transfer arm of the transfer device can be freely moved back and forth Telescopic.

該半導體製程處理系統亦包括至少一真空鎖,該真空鎖設有多個工件架,該傳送臂可同時指向真空鎖之不同工件架之位置,以完成工件之取放。每一真空鎖設有兩個或四個工件架。真空鎖分為上下兩層,處於下層之工件架設有易於散熱之墊片用以增強散熱效果。The semiconductor process processing system also includes at least one vacuum lock, the vacuum lock is provided with a plurality of workpiece holders, and the transfer arms can simultaneously point to different workpiece holder positions of the vacuum lock to complete the pick-and-place of the workpiece. Each vacuum lock is provided with two or four workpiece holders. The vacuum lock is divided into upper and lower layers, and the workpiece rack in the lower layer is provided with a gasket which is easy to dissipate heat to enhance the heat dissipation effect.

本發明之另一目的在於提供一種解決目前工件量產裝置處理均一不高、不能高品質地進行工件批量處理之問題的半導體製程處理系統。Another object of the present invention is to provide a semiconductor process processing system that solves the problem that the current workpiece mass production apparatus is not uniform in processing and can not perform batch processing of workpieces with high quality.

本發明藉由以下技術方法實現上述目的:一種半導體處理腔室,包括多個處理平臺,處理平臺周圍設有用於排氣之放射狀的槽,處理腔室周圍設有排氣通道,處理腔室之排氣通道及處理平臺之放射狀的槽相連通,構成一排氣系統。The present invention achieves the above object by the following technical method: a semiconductor processing chamber comprising a plurality of processing platforms, a radial groove for exhausting around the processing platform, an exhaust passage around the processing chamber, and a processing chamber The exhaust passage communicates with the radial grooves of the processing platform to form an exhaust system.

其中,該處理腔室包括腔室頂蓋及腔室基盤,一抽氣隔離板設置於腔室頂蓋與腔室基盤之間,其中腔室頂蓋具有若干凸起之噴淋頭,該抽氣隔離板上具有與該噴淋頭對應的若干抽氣隔離孔,在抽氣隔離板下方的腔室基盤中具有與每一抽氣隔離孔相對應的加熱基座,該對應的噴淋頭、抽氣隔離孔及加熱基座形成處理平臺。抽氣隔離板之周邊設有多個放射狀的槽。該放射狀的槽之分佈為靠近抽氣隔離板周邊之一側較靠近抽氣隔離盤中心的一側疏。抽氣隔離板周圍亦設置有與腔室頂蓋之凹陷部的延伸部相對應的多個排氣口。Wherein, the processing chamber comprises a chamber top cover and a chamber base plate, and a suction isolation plate is disposed between the chamber top cover and the chamber base plate, wherein the chamber top cover has a plurality of raised shower heads The gas separation plate has a plurality of suction isolation holes corresponding to the shower head, and a heating base corresponding to each suction isolation hole in the chamber base below the suction insulation plate, the corresponding shower head The suction isolation hole and the heating base form a processing platform. A plurality of radial grooves are provided around the suction isolation plate. The radial groove is distributed near the side of the suction isolation plate on the side closer to the center of the suction isolation plate. A plurality of exhaust ports corresponding to the extensions of the recesses of the chamber cover are also disposed around the suction partition.

在腔室基盤上設有至少一用於排氣之排氣槽,且排氣槽與抽氣隔離板之排氣口相連通。腔室基盤底部設有與該排氣槽相通之排氣通道,該排氣通道與排氣裝置相連。At least one exhaust groove for exhausting is provided on the chamber base, and the exhaust groove is in communication with the exhaust port of the suction partition. The bottom of the chamber base is provided with an exhaust passage communicating with the exhaust passage, and the exhaust passage is connected to the exhaust device.

處理平臺周圍排出之氣流形成的氣幕形成過程為:氣體由本發明之噴淋頭送入每一處理平臺,由於進氣系統之氣壓以及排氣裝置對氣體之抽取,氣體自每一處理平臺之放射狀槽中流出,由於氣壓的作用,氣體之流速可很快,在處理平臺周圍形成氣幕。加熱基座周圍設有向上噴射之惰性氣體氣幕。The air curtain forming process formed by the airflow discharged around the processing platform is: gas is sent to each processing platform by the sprinkler of the present invention, and the gas is extracted from each processing platform due to the air pressure of the intake system and the extraction of the gas by the exhaust device. The radial flow out of the tank, due to the action of air pressure, the flow rate of the gas can be very fast, forming a gas curtain around the treatment platform. An inert gas curtain is sprayed around the heating base.

另一技術方案為:一種半導體處理腔室,包括多個處理平臺,亦包括一抽氣隔離板置放在處理平臺上,該抽氣隔離板具有多個與處理平臺對應的抽氣隔離孔,在半導體處理過程中,藉由抽氣隔離孔使得各處理平臺之反應環境相互隔離。Another technical solution is: a semiconductor processing chamber, including a plurality of processing platforms, and a gas isolating plate disposed on the processing platform, the pumping insulating plate having a plurality of pumping isolation holes corresponding to the processing platform. In the semiconductor processing process, the reaction environments of the processing platforms are isolated from each other by evacuating the isolation holes.

其中,該半導體處理腔室亦包括腔室頂蓋及腔室基盤,處理平臺設置於腔室基盤內,抽氣隔離板設置於腔室頂蓋與腔室基盤之間。其中腔室頂蓋具有若干凸起之帶有細孔的噴淋頭。該抽氣隔離板上之抽氣隔離孔與該噴淋頭相對應,並且在半導體工件處理過程中,噴淋頭緊靠抽氣隔離板之抽氣隔離孔。在抽氣隔離板下方的腔室基盤中具有與每一抽氣隔離孔相對應的加熱基座,該對應的噴淋頭、抽氣隔離孔及加熱基座形成處理平臺。抽氣隔離孔之周邊設有若干放射狀槽,該放射狀的槽之分佈為靠近抽氣隔離板周邊之一側較靠近抽氣隔離板中心的一側疏。抽氣隔離板周圍亦設置有與腔室頂蓋之凹陷部的延伸部相對應的多個排氣口。抽氣隔離板之周圍設有多個對稱的排氣口。在腔室基盤上靠近抽氣隔離板周圍設有至少一用於排氣之排氣槽。腔室基盤底部設有與該排氣槽相通之排氣通道,該排氣通道與排氣裝置相連。Wherein, the semiconductor processing chamber also includes a chamber top cover and a chamber base, the processing platform is disposed in the chamber base, and the suction isolation plate is disposed between the chamber top cover and the chamber base. The chamber top cover has a plurality of raised showerheads with fine holes. The suction isolation hole on the air separation spacer corresponds to the shower head, and during the processing of the semiconductor workpiece, the shower head abuts against the suction isolation hole of the air separation spacer. A heating base corresponding to each of the suction isolation holes is formed in the chamber base below the suction isolation plate, and the corresponding shower head, the suction isolation hole and the heating base form a processing platform. A plurality of radial grooves are arranged around the suction isolation hole, and the radial grooves are distributed near a side of the periphery of the suction isolation plate and closer to the center of the suction insulation plate. A plurality of exhaust ports corresponding to the extensions of the recesses of the chamber cover are also disposed around the suction partition. A plurality of symmetrical exhaust ports are arranged around the suction isolation plate. At least one exhaust groove for exhausting is provided on the chamber base adjacent to the suction partition. The bottom of the chamber base is provided with an exhaust passage communicating with the exhaust passage, and the exhaust passage is connected to the exhaust device.

該處理腔室中氣流流向為:反應氣體由噴淋頭送入每一處理平臺,對置放在加熱基座上之半導體工件進行處理,由於進氣系統之氣壓以及排氣裝置對反應氣體之抽取,反應氣體自每一處理平臺之抽氣隔離板的放射狀槽中流出,進入腔室頂蓋之凹陷部,並向凹陷部之延伸部流動,經抽氣隔離板之周圍的排氣口流至腔室基盤之排氣槽中,再藉由與排氣槽相通之排氣通道進入排氣裝置。The flow direction of the gas in the processing chamber is: the reaction gas is sent from the shower head to each processing platform, and the semiconductor workpiece placed on the heating base is processed, due to the gas pressure of the intake system and the reaction gas to the exhaust gas Extracting, the reaction gas flows out from the radial groove of the suction isolation plate of each processing platform, enters the concave portion of the top cover of the chamber, and flows to the extension portion of the concave portion, and the exhaust port around the suction isolation plate It flows into the exhaust groove of the chamber base and enters the exhaust device through an exhaust passage communicating with the exhaust groove.

腔室基盤正對傳送室一側設有用於裝卸工件之裝卸口。加熱基座底部通有惰性氣體以防止微粒塵埃在加熱基座下方沉積及薄膜生長。The chamber base is provided with a loading and unloading port for loading and unloading the workpiece on the side of the transfer chamber. An inert gas is passed through the bottom of the heated base to prevent particulate dust from depositing under the heated base and film growth.

本發明之再一目的在於提供一種解決目前工件量產裝置工件裝卸速度慢,工件處理效率低之問題的處理系統。Still another object of the present invention is to provide a processing system that solves the problems of slow loading and unloading of workpieces in a workpiece mass production apparatus and low processing efficiency of workpieces.

本發明藉由以下技術方法實現上述目的:一種半導體製程處理系統之工件的傳遞方法,該半導體製程處理系統包括傳送室及處理腔室,傳送室內設置有傳送裝置,該傳送裝置具有至少兩個位於上下位置且可分別沿水平方向伸縮之傳送臂,該方法包括:(1)傳送裝置之一傳送臂自處理腔室內的一工件裝卸口取出一片工件;(2)緊跟步驟(1)完成後,傳送裝置之另外一傳送臂將另外一片工件藉由該工件裝卸口放入處理腔室內。The present invention achieves the above object by the following technical method: a method of transferring a workpiece of a semiconductor process processing system, the semiconductor process processing system comprising a transfer chamber and a processing chamber, the transfer chamber being provided with a transfer device having at least two a transfer arm that is vertically movable and retractable in a horizontal direction, the method comprising: (1) one of the transfer devices transporting a piece of the workpiece from a workpiece loading and unloading opening in the processing chamber; (2) following the completion of the step (1) Another transfer arm of the transfer device places another piece of workpiece into the processing chamber through the workpiece loading and unloading port.

其中,該傳送裝置可在傳送室內之水平面上旋轉。傳送裝置之兩個傳送臂可隨傳送裝置的主軸上下移動。傳送裝置每次藉由工件之裝卸口裝入或卸出一片工件。半導體製程處理系統亦包括真空鎖,傳送裝置每次在真空鎖中可取出兩片工件。Wherein the transfer device is rotatable on a horizontal plane within the transfer chamber. The two transfer arms of the conveyor can move up and down with the spindle of the conveyor. The transfer device loads or unloads a piece of workpiece each time through the loading and unloading port of the workpiece. The semiconductor process processing system also includes a vacuum lock, and the transfer device can take two pieces of the workpiece each time in the vacuum lock.

本發明之另一技術方案為:一種半導體製程處理系統之工件裝載方法,該半導體製程處理系統包括真空鎖、傳送室、具有n個處理平臺之處理腔室,處理腔室內設置有工件交換平臺,其中傳送室具有指向同一方向並且位於上下位置之至少兩個傳送臂的傳送裝置,在處理腔室內無工件之情況下裝載工件的步驟如下:(1)傳送裝置利用其兩個傳送臂自真空鎖中拿出兩片工件;(2)將兩個傳送臂旋轉至處理腔室之裝卸口處,其中第一傳送臂正對裝卸口,將該第一傳送臂所持之工件放在工件交換平臺上,工件交換平臺旋轉n分之一圈;(3)傳送裝置之第二傳送臂調整至正對裝卸口處,將該第二傳送臂所持之工件放在工件交換平臺上;(4)兩個傳送臂返回真空鎖再取兩片工件,工件交換平臺旋轉n分之一圈;(5)重複上述步驟(2)、(3)、(4),直至處理腔室裝滿。Another technical solution of the present invention is: a workpiece loading method of a semiconductor process processing system, the semiconductor process processing system includes a vacuum lock, a transfer chamber, a processing chamber having n processing platforms, and a workpiece exchange platform is disposed in the processing chamber. Where the transfer chamber has transfer means for at least two transfer arms pointing in the same direction and in the up and down position, the steps of loading the workpiece without the workpiece in the processing chamber are as follows: (1) The transfer device utilizes its two transfer arms from the vacuum lock Two pieces of workpiece are taken out; (2) two transfer arms are rotated to the loading and unloading port of the processing chamber, wherein the first transfer arm faces the loading and unloading port, and the workpiece held by the first transfer arm is placed on the workpiece exchange platform , the workpiece exchange platform rotates n minutes; (3) the second transfer arm of the transfer device is adjusted to the front loading and unloading port, and the workpiece held by the second transfer arm is placed on the workpiece exchange platform; (4) two The transfer arm returns to the vacuum lock and takes two pieces of workpiece, and the workpiece exchange platform rotates n minutes; (5) repeat the above steps (2), (3), (4) until the processing chamber is full.

其中,處理平臺之個數n為自然數。處理腔室之數目為兩個或三個。真空鎖設有上下兩層結構,其中上層為交換層用於工件之傳送及交換,而下層則設有易於散熱之墊片用以散熱。真空鎖內容納兩片或四片工件。Among them, the number n of processing platforms is a natural number. The number of processing chambers is two or three. The vacuum lock is provided with two upper and lower layers, wherein the upper layer is an exchange layer for the transfer and exchange of workpieces, and the lower layer is provided with a gasket for easy heat dissipation for heat dissipation. The vacuum lock contains two or four pieces of workpiece.

在步驟(5)完成後且等待所有的工件經處理後,亦進一步包括工件交換步驟,該工件交換步驟包括:a.傳送裝置返回真空鎖,並自真空鎖中用第一傳送臂取出一片未處理的工件;b.旋轉傳送裝置,使其返回處理腔室位置,並使第二傳送臂正對處理腔室之裝卸口處;c.傳送裝置用第二傳送臂藉由裝卸口自工件交換平臺取出一片處理後之工件;d.調整傳送裝置位置,使第一傳送臂正對裝卸口,傳送裝置用第一傳送臂藉由裝卸口向工件交換平臺放入一片未處理的工件;e.傳送裝置之第二傳送臂返回真空鎖,並將第二傳送臂取得之處理後的工件放入真空鎖。After the completion of the step (5) and waiting for all the workpieces to be processed, the workpiece exchange step further includes: a. the transfer device returns to the vacuum lock, and the first transfer arm is taken out from the vacuum lock. Processing the workpiece; b. rotating the conveyor to return to the processing chamber position and causing the second transfer arm to face the loading and unloading port of the processing chamber; c. transferring the second transfer arm to the workpiece by the loading and unloading port The platform takes out a piece of processed workpiece; d. adjusts the position of the conveying device so that the first conveying arm faces the loading and unloading port, and the conveying device uses the first conveying arm to insert an unprocessed workpiece into the workpiece exchange platform through the loading and unloading port; e. The second transfer arm of the transfer device returns to the vacuum lock, and the processed workpiece obtained by the second transfer arm is placed in the vacuum lock.

工件交換平臺設有n對傳送臂,其中工件交換平臺可旋轉使得每對傳送臂與一處理平臺相對應。The workpiece exchange platform is provided with n pairs of transfer arms, wherein the workpiece exchange platform is rotatable such that each pair of transfer arms corresponds to a processing platform.

一種半導體製程處理系統之工件卸載方法,該半導體製程處理系統包括真空鎖、傳送室、具有n個處理平臺之處理腔室,處理腔室內設置有工件交換平臺,其中傳送室具有指向同一方向並且位於上下位置之至少兩個傳送臂的傳送裝置,在處理腔室為滿之情況下卸載工件的步驟如下:(1)傳送裝置用第一傳送臂藉由裝卸口自工件交換平臺取出一片工件;(2)工件交換平臺旋轉n分之一圈,調整第二傳送臂位置使其正對裝卸口;(3)傳送裝置用第二傳送臂藉由裝卸口自工件交換平臺取出一片工件;(4)傳送裝置之第二傳送臂返回真空鎖並將取得之兩片工件放入真空鎖;(5)重複上述步驟,直至處理腔室卸載完畢。A workpiece unloading method for a semiconductor process processing system, the semiconductor process processing system comprising a vacuum lock, a transfer chamber, a processing chamber having n processing platforms, and a processing unit having a workpiece exchange platform, wherein the transfer chamber has a pointing direction and is located The conveying device of the at least two transfer arms in the upper and lower positions, when the processing chamber is full, the steps of unloading the workpiece are as follows: (1) the conveying device uses the first transfer arm to take out a piece of workpiece from the workpiece exchange platform through the loading and unloading port; 2) The workpiece exchange platform rotates n minutes, adjusts the position of the second transfer arm to face the loading and unloading port; (3) the conveyor uses the second transfer arm to take out a piece of workpiece from the workpiece exchange platform through the loading and unloading port; (4) The second transfer arm of the transfer device returns the vacuum lock and places the two pieces of the workpiece into the vacuum lock; (5) repeats the above steps until the process chamber is unloaded.

其中,處理平臺之個數n為4自然數。處理腔室之數目為兩個或三個。真空鎖設有上下兩層結構,其中上層為交換層用於工件之傳送及交換,而下層則設有易於散熱之墊片用以散熱。工件交換平臺設有n對傳送臂,其中工件交換平臺可旋轉使得每對傳送臂與一處理平臺相對應。Among them, the number n of processing platforms is 4 natural numbers. The number of processing chambers is two or three. The vacuum lock is provided with two upper and lower layers, wherein the upper layer is an exchange layer for the transfer and exchange of workpieces, and the lower layer is provided with a gasket for easy heat dissipation for heat dissipation. The workpiece exchange platform is provided with n pairs of transfer arms, wherein the workpiece exchange platform is rotatable such that each pair of transfer arms corresponds to a processing platform.

一種半導體製程處理系統之工件交換方法,該半導體製程處理系統包括真空鎖、傳送室、具有n個處理平臺之處理腔室,處理腔室內設置有工件交換平臺,其中傳送室具有指向同一方向並且位於上下位置之至少兩個傳送臂的傳送裝置,在處理腔室有工件之情況下交換工件的步驟如下:(1)傳送裝置返回真空鎖,並自真空鎖中用第一傳送臂取出一片未處理之工件;(2)旋轉傳送裝置,使其返回處理腔室位置,並使第二傳送臂正對處理腔室之裝卸口處;(3)傳送裝置用第二傳送臂藉由裝卸口自工件交換平臺取出一片處理後之工件;(4)調整傳送裝置位置,使第一傳送臂正對裝卸口,傳送裝置用第一傳送臂藉由裝卸口向工件交換平臺放入一片未處理的工件;(5)傳送裝置之第二傳送臂返回真空鎖,並將第二傳送臂取得之處理後的工件放入真空鎖。A workpiece exchange method for a semiconductor process processing system, the semiconductor process processing system comprising a vacuum lock, a transfer chamber, a processing chamber having n processing platforms, and a processing unit having a workpiece exchange platform, wherein the transfer chamber has the same direction and is located The transfer device for at least two transfer arms in the upper and lower positions, the steps of exchanging the workpiece in the case where the processing chamber has a workpiece are as follows: (1) the transfer device returns to the vacuum lock, and the unloaded one piece is taken out from the vacuum lock by the first transfer arm (2) rotating the transfer device to return to the processing chamber position, and the second transfer arm is facing the loading and unloading port of the processing chamber; (3) the second transfer arm of the transfer device is attached to the workpiece by the loading and unloading port The exchange platform takes out a piece of the processed workpiece; (4) adjusts the position of the conveying device so that the first conveying arm faces the loading and unloading port, and the conveying device uses the first conveying arm to insert an unprocessed workpiece into the workpiece exchange platform through the loading and unloading port; (5) The second transfer arm of the transfer device returns to the vacuum lock, and the processed workpiece obtained by the second transfer arm is placed in the vacuum lock.

其中,處理平臺之個數n為4自然數。處理腔室之數目為兩個或三個。真空鎖設有上下兩層結構,其中上層為交換層用於工件之傳送及交換,而下層則設有易於散熱之墊片用以散熱。真空鎖內容納兩片或四片工件。工件交換平臺設有n對傳送臂,其中工件交換平臺可旋轉使得每對傳送臂與一處理平臺相對應。Among them, the number n of processing platforms is 4 natural numbers. The number of processing chambers is two or three. The vacuum lock is provided with two upper and lower layers, wherein the upper layer is an exchange layer for the transfer and exchange of workpieces, and the lower layer is provided with a gasket for easy heat dissipation for heat dissipation. The vacuum lock contains two or four pieces of workpiece. The workpiece exchange platform is provided with n pairs of transfer arms, wherein the workpiece exchange platform is rotatable such that each pair of transfer arms corresponds to a processing platform.

本發明採用獨特的傳送裝置工件傳送結構,可更加迅速地裝卸工件,提高產能。本發明之處理腔室採用特殊設計的進排氣系統,使得各處理平臺之間形成反應氣體幕障,可提昇各平臺之間的均一度,避免了不同處理平臺之間的反應氣體交互干擾。The invention adopts a unique conveying device workpiece conveying structure, which can load and unload workpieces more quickly and improve productivity. The processing chamber of the invention adopts a specially designed intake and exhaust system, so that a reaction gas curtain is formed between the processing platforms, which can improve the uniformity between the platforms and avoid the reaction gas interaction between different processing platforms.

請參看圖1,圖1為本發明半導體製程處理系統之立體結構示意圖。本發明由一標準的工廠介面1、兩個真空鎖2、一傳送室3、一或多個處理腔室4構成。其中,工廠介面1與真空鎖2相鄰。傳送室3位於真空鎖2與處理腔室4之間。多個處理腔室4可圍繞傳送室3設置。每一處理腔室4中包含有多個處理平臺5,每一處理平臺5可處理一片半導體工件。在如圖1所示之實施例中,半導體製程處理系統包括兩個處理腔室4,兩個處理腔室4圍繞傳送室3設置。每一處理腔室4上方均設置有一腔室頂蓋8,為便於本發明之說明,其中一處理腔室4之腔室頂蓋8處於閉合狀態,另一腔室頂蓋8處於打開狀態。自閉合狀態之腔室頂蓋8上可看到,處理腔室4之腔室頂蓋8上設有一反應氣體供應裝置6,該反應氣體供應裝置6可藉由進氣管自腔室頂蓋8之頂部向處理腔室4內不同之處理平臺5輸入反應氣體。自打開之腔室頂蓋8中可看到,腔室頂蓋8內部具有一凹陷部9,凹陷部9四周各有一延伸部10。在凹陷部9中具有與處理平臺1之個數相同的多個凸起之噴淋頭11,噴淋頭11上設有若干均勻密佈之細孔12以供反應氣體供應裝置6提供的反應氣體輸入處理平臺5內。另外,在處理腔室4之支架側邊亦設有進行工件處理所需之控制、排氣以及動力裝置7,為簡潔起見,此處不詳述。本發明每一處理腔室4可共用一套清潔源及反應氣體提供裝置、排氣泵及終端探測器。在電漿化學氣相沉積之情況下,同一處理腔室4之處理平臺5之間亦可共用一套射頻能量輸入裝置。Please refer to FIG. 1. FIG. 1 is a schematic perspective view of a semiconductor process processing system according to the present invention. The invention consists of a standard factory interface 1, two vacuum locks 2, a transfer chamber 3, and one or more processing chambers 4. Among them, the factory interface 1 is adjacent to the vacuum lock 2. The transfer chamber 3 is located between the vacuum lock 2 and the processing chamber 4. A plurality of processing chambers 4 can be disposed around the transfer chamber 3. Each processing chamber 4 contains a plurality of processing platforms 5, each of which can process a semiconductor workpiece. In the embodiment shown in FIG. 1, the semiconductor process processing system includes two processing chambers 4, two process chambers 4 disposed about the transfer chamber 3. A chamber top cover 8 is disposed above each of the processing chambers 4. For ease of description of the present invention, the chamber top cover 8 of one of the processing chambers 4 is in a closed state and the other chamber top cover 8 is in an open state. As can be seen from the chamber top cover 8 of the self-closing state, a reaction gas supply device 6 is disposed on the chamber top cover 8 of the processing chamber 4, and the reaction gas supply device 6 can be opened from the chamber by the intake pipe. The top of 8 inputs the reaction gases to different processing platforms 5 in the processing chamber 4. As can be seen in the open top cover 8 of the chamber, the interior of the chamber cover 8 has a recess 9 with an extension 10 around each other. In the recessed portion 9, there are a plurality of raised shower heads 11 having the same number as the processing platform 1, and the shower head 11 is provided with a plurality of uniformly dense pores 12 for the reaction gas supplied from the reaction gas supply device 6. Input into the processing platform 5. In addition, the control, exhaust, and power unit 7 required for processing the workpiece are also provided on the side of the holder of the processing chamber 4, which will not be described in detail herein for the sake of brevity. Each of the processing chambers 4 of the present invention can share a set of cleaning sources and reactive gas supply devices, exhaust pumps, and terminal detectors. In the case of plasma chemical vapor deposition, a set of RF energy input devices can also be shared between the processing platforms 5 of the same processing chamber 4.

請參看圖2,圖2為本發明半導體製程處理系統在省略處理腔室頂蓋時之俯視圖。圖2中之實施例中,傳送室3為五邊形的,可在其周圍最多設置三個處理腔室4,圖2之實施例中設置了兩個,當然亦可只有一處理腔室4。在其他某些實施例中,傳送室3亦可為其他不同形狀,例如六邊形。相應的,傳送室3周圍最多可設置之處理腔室4的數目亦可不同。如圖2所示之實施例中處理腔室4是具有帶有四個倒角之四邊形,其內部設置有四個處理平臺5。當然在其他的某些實施例中,處理腔室4亦可擁有其他不同的形狀以及不同數目的處理平臺5。Please refer to FIG. 2. FIG. 2 is a plan view of the semiconductor process processing system of the present invention when the processing chamber top cover is omitted. In the embodiment of Fig. 2, the transfer chamber 3 is pentagonal, and up to three processing chambers 4 can be disposed around it. In the embodiment of Fig. 2, two are provided, and of course, only one processing chamber 4 is provided. . In other embodiments, the transfer chamber 3 can also have other different shapes, such as a hexagon. Correspondingly, the number of processing chambers 4 that can be placed around the transfer chamber 3 can also be different. In the embodiment shown in Fig. 2, the processing chamber 4 has a quadrilateral shape with four chamfers, and four processing platforms 5 are disposed inside. Of course, in some other embodiments, the processing chamber 4 can also have other different shapes and a different number of processing platforms 5.

請參看圖3,圖3為本發明半導體製程處理系統中之處理腔室的結構分解示意圖。在圖3中,處理腔室包括腔室頂蓋8、抽氣隔離板13、工件交換平臺25、加熱基座19以及腔室基盤18。其中,加熱基座19藉由其中心軸31安裝在腔室基盤18之軸孔31'中,抽氣隔離板13、工件交換平臺25及腔室基盤18沿如圖所示之共同的軸心線上下安裝在一起,腔室頂蓋8與腔室基盤18機械連接在一起並且可打開或閉合。當腔室頂蓋8蓋在腔室基盤18上時,腔室頂蓋8及腔室基盤18內部形成一密閉的工件處理腔室。需要說明,本發明中之處理腔室內部可設置有多個工件處理平臺,為便於說明,在圖3所示之實施例中,僅以四個工件處理平臺為例。Please refer to FIG. 3. FIG. 3 is a schematic exploded view of the processing chamber in the semiconductor process processing system of the present invention. In FIG. 3, the processing chamber includes a chamber top cover 8, a suction isolation panel 13, a workpiece exchange platform 25, a heating base 19, and a chamber base 18. Wherein, the heating base 19 is mounted in the shaft hole 31' of the chamber base plate 18 by its central shaft 31, and the suction separating plate 13, the workpiece exchange platform 25 and the chamber base plate 18 are along the common axis as shown. Mounted together under the line, the chamber top cover 8 is mechanically coupled to the chamber base 18 and can be opened or closed. When the chamber top cover 8 is placed over the chamber base 18, a closed workpiece processing chamber is formed within the chamber top cover 8 and the chamber base 18. It should be noted that, in the processing chamber of the present invention, a plurality of workpiece processing platforms may be disposed. For convenience of description, in the embodiment shown in FIG. 3, only four workpiece processing platforms are taken as an example.

腔室頂蓋8向內凹陷,形成一凹陷部9,該凹陷部9四周有延伸之突起狀的延伸部10。當處理半導體工件時,腔室頂蓋8與腔室頂蓋合上,內部形成一密閉反應腔體,反應氣體會在凹陷部9內流動,並最終排出處理腔室(容後詳述)。腔室頂蓋8之凹陷部9內設置有四個自凹陷部9凸起之噴淋頭11,噴淋頭11上均勻分佈著供反應氣體輸入之細孔12。The chamber top cover 8 is recessed inwardly to form a recess 9 having a projecting extension 10 extending around it. When the semiconductor workpiece is processed, the chamber top cover 8 is closed with the chamber top cover, and a closed reaction chamber is formed inside, and the reaction gas flows in the recessed portion 9 and finally exits the processing chamber (described later in detail). Four recesses 11 projecting from the recessed portion 9 are disposed in the recessed portion 9 of the chamber top cover 8. The fine holes 12 for the input of the reaction gas are evenly distributed on the shower head 11.

抽氣隔離板13上設置有與噴淋頭11之個數及位置相對應的若干抽氣隔離孔16。抽氣隔離孔16之孔徑上寬下窄,對應地,腔室頂蓋8上之噴淋頭11直徑小於該抽氣隔離孔16之上端直徑,大於該抽氣隔離孔16之下端直徑,此種設置使得當腔室頂蓋8蓋在腔室基盤18時,噴淋頭11及抽氣隔離孔16有較緊密之接觸。另外,抽氣隔離板13周圍亦設置有四個與腔室頂蓋8之凹陷部9的延伸部10相連通之排氣口14。The suction isolation panel 13 is provided with a plurality of suction isolation holes 16 corresponding to the number and position of the shower heads 11. The diameter of the suction isolation hole 16 is wider and narrower. Correspondingly, the diameter of the shower head 11 on the chamber top cover 8 is smaller than the diameter of the upper end of the suction isolation hole 16, which is larger than the diameter of the lower end of the suction isolation hole 16. The arrangement is such that when the chamber top cover 8 is placed over the chamber base 18, the shower head 11 and the suction isolation aperture 16 are in closer contact. Further, four exhaust ports 14 communicating with the extending portion 10 of the recessed portion 9 of the chamber top cover 8 are also provided around the air suction partitioning plate 13.

工件交換平臺25用於在各處理平臺5之間傳送工件,其具有一轉軸孔33及沿轉軸孔33周邊均勻設置的與工件平臺數目相對應對數之可開合的傳送臂37,每一對傳送臂37上用於置放工件。工件交換平臺25可旋轉,並可使每一對傳送臂37正好位於一處理平臺5之上方。本實施例中,抽氣隔離板排氣口工件交換平臺25具有四對可開合之傳送臂37與抽氣隔離板13之抽氣隔離孔16相對應。The workpiece exchange platform 25 is configured to transfer a workpiece between the processing platforms 5, and has a rotating shaft hole 33 and a transfer arm 37 which is uniformly disposed along the periphery of the rotating shaft hole 33 and which is opposite to the number of workpiece platforms. The transfer arm 37 is used to place a workpiece. The workpiece exchange platform 25 is rotatable and allows each pair of transfer arms 37 to be positioned just above a processing platform 5. In the present embodiment, the suction isolation plate exhaust port workpiece exchange platform 25 has four pairs of openable transfer arms 37 corresponding to the suction isolation holes 16 of the suction insulation plate 13.

加熱基座19具有一呈圓形之加熱平臺,加熱平臺下面之中心位置處有一支撐桿31,可在腔室基盤18中沿軸孔31'上下升降。加熱平臺上置放用於處理之工件。為配合工件交換平臺25在加熱基座19上取放工件,加熱基座19上亦設有多個可沿腔室基盤18之軸孔20'上下移動的頂針20。頂針20的個數及排列方式可有多種,在如圖3該之實施例中,每一加熱基座19上具有三個呈三角形分佈之頂針20。The heating base 19 has a circular heating platform, and a support rod 31 is disposed at a central position below the heating platform, and can be lifted up and down along the shaft hole 31' in the chamber base 18. A workpiece for processing is placed on the heating platform. In order to cooperate with the workpiece exchange platform 25 to pick up and place the workpiece on the heating base 19, the heating base 19 is also provided with a plurality of ejector pins 20 movable up and down along the shaft hole 20' of the chamber base plate 18. The number and arrangement of the thimbles 20 can be various. In the embodiment of FIG. 3, each of the heating bases 19 has three thimbles 20 distributed in a triangular shape.

結合參看圖3及圖4,腔室基盤18中間設有一與工件交換平臺25之轉軸孔33共軸心的軸孔33',工件交換平臺25藉由一轉動機構(未圖示)安裝在腔室基盤18中之軸孔33'上。腔室基盤18內設置有4個工件處理平臺5,每一工件處理平臺裏面設置一軸孔31'及三個軸孔20',加熱基座19之支撐桿31可在軸孔31'內上下升降,頂針20可在軸孔20'內上下升降。腔室基盤18正對一工件處理平臺5之一側設置有一供工件進出的工件裝卸口23。腔室基盤18上在工件裝卸口23相對兩側各設置有一用於排氣之排氣槽17。腔室基盤18底部亦設置有與排氣通道21相連通之排氣裝置22。請再結合參看圖7,圖7為圖4中所示之腔室基盤18沿I-I線剖開之剖視圖。由圖7可知,排氣槽17及排氣通道21之間藉由一連接槽27使二者連通在一起。因此,排氣槽17、排氣通道21及排氣裝置22相互連通。Referring to Figures 3 and 4, a shaft hole 33' coaxial with the shaft hole 33 of the workpiece exchange platform 25 is disposed in the middle of the chamber base 18. The workpiece exchange platform 25 is mounted in the chamber by a rotating mechanism (not shown). On the shaft hole 33' in the chamber base 18. Four workpiece processing platforms 5 are disposed in the chamber base 18, and each of the workpiece processing platforms is provided with a shaft hole 31' and three shaft holes 20'. The support rod 31 of the heating base 19 can be lifted up and down in the shaft hole 31'. The thimble 20 can be raised and lowered in the shaft hole 20'. The chamber base plate 18 is provided with a workpiece loading and unloading port 23 for the workpiece to enter and exit on one side of a workpiece processing platform 5. An exhaust groove 17 for exhausting is provided on the chamber base 18 on opposite sides of the workpiece loading and unloading port 23. The bottom of the chamber base 18 is also provided with an exhaust device 22 that communicates with the exhaust passage 21. Referring again to FIG. 7, FIG. 7 is a cross-sectional view of the chamber base 18 shown in FIG. 4 taken along line I-I. As can be seen from Fig. 7, the exhaust groove 17 and the exhaust passage 21 are connected to each other by a connecting groove 27. Therefore, the exhaust groove 17, the exhaust passage 21, and the exhaust device 22 communicate with each other.

圖6為本發明之抽氣隔離板13的結構示意圖,如圖6所示,抽氣隔離板13之抽氣隔離孔16的周邊設有若干放射狀的槽24,抽氣隔離板13周圍亦設置有與腔室頂蓋8之凹陷部9的延伸部10相連通之多個排氣口14。6 is a schematic structural view of the air separation panel 13 of the present invention. As shown in FIG. 6, a plurality of radial slots 24 are formed around the air separation barrier 16 of the air separation panel 13, and the air separation panel 13 is also surrounded. A plurality of exhaust ports 14 are provided in communication with the extensions 10 of the recesses 9 of the chamber top cover 8.

請結合參看圖3,在工件處理時,腔室頂蓋8蓋在腔室基盤18上形成一處理腔,在處理腔內,抽氣隔離板13置放在腔室基盤18上,並且抽氣隔離板13之每一抽氣隔離孔16恰好位於加熱基座19之上方,腔室頂蓋8之噴淋頭11與抽氣隔離板13的抽氣隔離孔16緊靠,加熱基座19與抽氣隔離板13緊靠,被處理之工件放在加熱基座19與抽氣隔離板13之間,工件交換平臺25之傳送臂37可藉由各種方式之設置使傳送臂37位於不阻擋加熱基座19之位置,從而不影響自噴淋頭11上噴出之反應氣體直接噴射到位於加熱基座19上的工件上。由此,噴淋頭11、抽氣隔離板13及加熱基座19形成一處理平臺5。反應氣體供應裝置6自腔室頂蓋8之頂部藉由噴淋頭11上的細孔12給處理平臺5輸入反應氣體。反應氣體自噴淋頭11上噴出來,對置放在加熱基座19上之半導體工件進行處理,由於抽氣隔離板13上設置有放射狀槽24,使得腔室頂蓋8上之噴淋頭11與抽氣隔離板13不能完全密閉,自噴淋頭11上之密佈的細孔12上進入處理平臺5之反應氣體在處理過工件後,經過由此等放射狀槽24構成之抽氣隔離板孔隙漏出,進入腔室頂蓋8向內凹陷之凹陷部9,並向凹陷部9之延伸部10流動,由於延伸部10與抽氣隔離板13之多個排氣口14相連通,再由於排氣裝置22之作用,漏出的氣體自動流至抽氣隔離板13上之多個排氣口14處,因為多個排氣口14與設置在腔室基盤18上之排氣槽17相連通,且由於排氣槽17及排氣通道21相連通,氣體就由此通路進入了排氣通道21,最終被排氣裝置22抽出,形成一完整的進氣排氣系統。由於反應氣體供應裝置6之氣壓以及排氣裝置22對反應氣體之抽取,整個進氣排氣系統之反應氣體的流速可很快,在處理平臺5周圍形成氣幕,使得各個平臺之間之反應氣體不至於互相干擾。Referring to FIG. 3, in the processing of the workpiece, the chamber cover 8 covers a processing chamber on the chamber base 18, and in the processing chamber, the air separation panel 13 is placed on the chamber base 18, and the air is pumped. Each of the suction isolation holes 16 of the insulation plate 13 is located just above the heating base 19, and the shower head 11 of the chamber top cover 8 abuts against the suction isolation hole 16 of the air separation insulation plate 13, and the heating base 19 is The suction isolation plate 13 is abutted, and the workpiece to be processed is placed between the heating base 19 and the suction insulation plate 13. The transfer arm 37 of the workpiece exchange platform 25 can be arranged in various ways so that the transfer arm 37 is not blocked. The position of the susceptor 19 is such that the reaction gas ejected from the shower head 11 is not directly sprayed onto the workpiece on the heating susceptor 19. Thereby, the shower head 11, the suction partitioning plate 13, and the heating base 19 form a processing platform 5. The reaction gas supply means 6 inputs the reaction gas from the top of the chamber top cover 8 to the processing platform 5 through the fine holes 12 in the shower head 11. The reaction gas is ejected from the shower head 11, and the semiconductor workpiece placed on the heating base 19 is processed. Since the exhaust spacer 13 is provided with a radial groove 24, the shower on the chamber top cover 8 is sprayed. The head 11 and the air separation panel 13 are not completely sealed, and the reaction gas entering the processing platform 5 from the fine pores 12 on the shower head 11 is subjected to the evacuation of the radial grooves 24 after the processing of the workpiece. The pores of the separator plate leak out, enter the recessed portion 9 recessed inwardly of the chamber top cover 8 , and flow toward the extension portion 10 of the recess portion 9 , because the extension portion 10 communicates with the plurality of exhaust ports 14 of the air suction partition plate 13 , Further, due to the action of the exhaust device 22, the leaked gas automatically flows to the plurality of exhaust ports 14 on the suction partitioning plate 13 because of the plurality of exhaust ports 14 and the exhaust slots 17 provided on the chamber base plate 18. In communication, and because the exhaust slot 17 and the exhaust passage 21 are in communication, the gas thus enters the exhaust passage 21 and is finally withdrawn by the exhaust unit 22 to form a complete intake and exhaust system. Due to the gas pressure of the reaction gas supply device 6 and the extraction of the reaction gas by the exhaust device 22, the flow rate of the reaction gas of the entire intake and exhaust system can be fast, forming a gas curtain around the treatment platform 5, so that the reaction between the various platforms The gases do not interfere with each other.

進一步地,考量到處理腔室4內部氣壓大小之不同而對反應氣體之流速產生的影響,本發明將放射狀槽24之分佈設置為靠近抽氣隔離板13周邊之一側較靠近抽氣隔離板13中心軸孔35的一側疏。如此對於每一放射狀槽24中流出之反應氣體流到排氣裝置22的難易程度係一致的,因而氣流亦更加均勻。Further, considering the influence of the difference in the internal pressure of the processing chamber 4 on the flow velocity of the reaction gas, the present invention sets the distribution of the radial grooves 24 to be close to the suction side of one side of the suction isolation plate 13 One side of the central shaft hole 35 of the plate 13 is sparse. Thus, the ease with which the reaction gas flowing out of each of the radial grooves 24 flows to the exhaust device 22 is uniform, and thus the air flow is more uniform.

由於處理腔室4內之處理平臺5係對稱設置的,每一處理平臺5排出之反應氣體所受到之阻礙係一致的。本發明藉由靠近抽氣隔離板13周圍設置在腔室基盤18上之排氣槽17使得排出之氣體被均勻、迅速地被抽出,保證了多片工件之間的處理均一性。而且本發明採用了噴淋頭11與抽氣隔離板13之間的由放射狀槽14構成之孔隙來作為處理平臺5之排氣口,使得處理平臺5中之氣流更為均勻,而且排出之氣體形成氣幕,在腔室內部開放之條件下形成氣幕隔離,使得各處理平臺之處理環境相對獨立。此外亦可在加熱基座19周圍設有向上噴射之惰性反應氣體氣幕,進一步防止反應氣體自加熱基座19與抽氣隔離板13之間的縫隙洩漏或進入。藉由此等措施,可有效地避免處理平臺5之間反應氣體之相互干擾。Since the processing platforms 5 in the processing chamber 4 are symmetrically disposed, the reaction gases discharged from each of the processing platforms 5 are consistently blocked. The present invention allows the discharged gas to be uniformly and rapidly extracted by the exhaust groove 17 provided on the chamber base 18 near the suction partitioning plate 13, thereby ensuring uniformity of processing between the plurality of workpieces. Moreover, the present invention adopts the aperture formed by the radial groove 14 between the shower head 11 and the suction partitioning plate 13 as the exhaust port of the processing platform 5, so that the airflow in the processing platform 5 is more uniform and discharged. The gas forms a gas curtain, and the air curtain isolation is formed under the condition that the chamber is open, so that the processing environment of each processing platform is relatively independent. Further, an inert reaction gas curtain which is sprayed upward may be provided around the heating base 19 to further prevent the reaction gas from leaking or entering from the gap between the heating base 19 and the suction partitioning plate 13. By such measures, mutual interference of the reaction gases between the processing platforms 5 can be effectively avoided.

請參看圖2,圖2為本發明半導體製程處理系統在省略處理腔室頂蓋時之俯視圖。工件由工件匣經流水線送至本發明之半導體製程處理系統,工廠介面1自工件匣中取出工件置放到真空鎖2中。傳送室3中設有一傳送裝置15,該傳送裝置15具有至少兩個可分別伸縮之傳送臂(容後詳述)。在圖中所示之實施例中,傳送裝置15係一具有兩個傳送臂之雙臂機器人,當然亦可係包括兩個以上傳送臂之機器人。該傳送裝置15將工件自真空鎖2中取出,置放到處理腔室4中之處理平臺5內。在一處理腔室4之所有處理平臺5內置放完工件時,該處理腔室4就可進行工件處理。處理完以後,再由傳送室3中之傳送裝置15取出處理完之工件,同時在原位放入未處理之工件再進行下一批次之處理。取出之工件放入真空鎖2中冷卻。冷卻完後再經由工廠介面1將其置放到流水線上之工件匣中送入下一製程步驟進行處理。Please refer to FIG. 2. FIG. 2 is a plan view of the semiconductor process processing system of the present invention when the processing chamber top cover is omitted. The workpiece is fed from the workpiece through the assembly line to the semiconductor process processing system of the present invention, and the factory interface 1 takes the workpiece from the workpiece and places it into the vacuum lock 2. A transfer device 15 is provided in the transfer chamber 3, and the transfer device 15 has at least two transfer arms that can be respectively telescoped (described in detail later). In the embodiment shown in the figures, the conveyor 15 is a two-arm robot having two transfer arms, and of course a robot comprising two or more transfer arms. The transfer device 15 takes the workpiece out of the vacuum lock 2 and places it in the processing platform 5 in the processing chamber 4. When all of the processing platforms 5 of a processing chamber 4 have built-in workpieces, the processing chamber 4 can perform workpiece processing. After the treatment, the processed workpiece is taken out by the conveying device 15 in the transfer chamber 3, while the unprocessed workpiece is placed in the original position and the next batch is processed. The removed workpiece is placed in the vacuum lock 2 for cooling. After cooling, it is placed in the workpiece 匣 of the assembly line through the factory interface 1 and sent to the next process step for processing.

請參看圖8,圖8為本發明之真空鎖2及傳送室3之結構示意圖。本發明具有兩個真空鎖2,真空鎖2位於五邊形傳送室3靠近工廠介面1之兩個相鄰邊。其中每一真空鎖2被分隔成四個槽,每一槽中可容納一片工件。真空鎖2及其每一槽可被抽成真空。工廠介面1可一次或多次地將真空鎖2中之四個槽內的工件裝上或取走。在另外某些實施例中真空鎖2可被分割成交換層及冷卻層,前者用於工件在真空鎖2及處理腔室4之間的轉送,而後者則用於冷卻處理完之工件,並將其送至非真空環境中以供工廠介面1取走。Please refer to FIG. 8. FIG. 8 is a schematic structural view of the vacuum lock 2 and the transfer chamber 3 of the present invention. The invention has two vacuum locks 2 located in the pentagon transfer chamber 3 adjacent to two adjacent sides of the factory interface 1. Each of the vacuum locks 2 is divided into four slots, each of which can accommodate a workpiece. The vacuum lock 2 and each of its slots can be evacuated. The factory interface 1 can load or remove the workpieces in the four slots of the vacuum lock 2 one or more times. In still other embodiments, the vacuum lock 2 can be divided into an exchange layer for transferring the workpiece between the vacuum lock 2 and the processing chamber 4, and a cooling layer for cooling the finished workpiece, and Take it to a non-vacuum environment for removal from factory interface 1.

如圖8中之傳送室3是一五邊形的真空腔室。在傳送室3內具有一傳送裝置15,傳送裝置15之兩個傳送臂可在水平面上同步旋轉或獨立旋轉各自角度(比如,兩個傳送臂可旋轉成相互呈180度),以及在垂直方向各自沿主軸上下移動,並可在水平方向上前後伸縮。工作時,工廠介面1自工件傳送盒中提取工件至真空鎖2中,再由傳送室3中之傳送裝置15將工件裝入處理腔室4。The transfer chamber 3 in Fig. 8 is a pentagonal vacuum chamber. There is a transfer device 15 in the transfer chamber 3, and the two transfer arms of the transfer device 15 can rotate synchronously or independently rotate the respective angles on a horizontal plane (for example, the two transfer arms can be rotated 180 degrees to each other), and in the vertical direction Each moves up and down along the main axis and can be stretched back and forth in the horizontal direction. In operation, the factory interface 1 extracts the workpiece from the workpiece transfer cassette into the vacuum lock 2, and the workpiece is loaded into the processing chamber 4 by the transfer device 15 in the transfer chamber 3.

圖9為本發明之傳送裝置位於處理腔室內的俯視圖,該傳送裝置15具有兩個傳送臂151、152,該等兩個傳送臂151、152位於同一主軸之上下位置。傳送裝置15之兩個傳送臂151、152可在真空鎖2(圖2)及處理腔室4(圖2)之間的水平面上同步旋轉或獨立旋轉。傳送裝置15每次由某一傳送臂(傳送臂151或傳送臂152)向一處理腔室藉由其工件之裝卸口23裝入或卸出一片工件,且傳送裝置15每次在一或多個真空鎖2中可取出兩片工件。傳送裝置15之每一臂151、152可隨傳送裝置15之主軸在垂直方向上下移動調整位置,並且傳送裝置15之每一臂151、152均可自由地在水平方向上前後伸縮。傳送裝置15之兩個傳送臂151、152可同時指向某一方向,比如,同時指向同一真空鎖或同一處理腔室,亦可各自單獨旋轉指向不同的方向,比如,兩個傳送臂分別指向同一真空鎖之兩個不同的製程架,或分別指向不同的兩個真空鎖之製程架;或者,一傳送臂指向一真空鎖,用於向該真空鎖內取或放半導體工件,而另一傳送臂指向一處理腔室,用於向該處理腔室內取或放半導體工件;或者,兩個傳送臂分別指向設置於傳送室邊上之兩個不同的處理腔室,用於分別向兩個處理腔室內取或放半導體工件。因此,本發明之傳送裝置的多個傳送臂可靈活地單獨執行半導體工件之取放動作,可同時自一或多個真空鎖內裝載或卸載兩片半導體工件,亦可連續地無等待時間地向一或多個處理腔室內完成半導體工件之裝載、卸載或交換動作,尤其適用於整合有多個真空鎖或處理腔室之半導體製程處理系統,因而整個半導體製程處理系統之產出量(throughput)被大大提高。因此,本發明之傳送裝置15在工件交換或裝卸過程中,只需要藉由調整傳送裝置15之傳送臂151、152的垂直位置,真空鎖2工件支架與及處理腔室4中之工件交換平臺25在垂直位置固定,只藉由傳送裝置15之運動完成工件交換。Figure 9 is a top plan view of the transfer apparatus of the present invention in a processing chamber having two transfer arms 151, 152 positioned above and below the same spindle. The two transfer arms 151, 152 of the transfer device 15 can be rotated synchronously or independently on a horizontal plane between the vacuum lock 2 (Fig. 2) and the processing chamber 4 (Fig. 2). The transfer device 15 loads or unloads a workpiece by a transfer arm (transfer arm 151 or transfer arm 152) to a processing chamber through its workpiece loading and unloading port 23, and the transfer device 15 is one or more at a time. Two pieces of workpiece can be taken out in the vacuum lock 2. Each of the arms 151, 152 of the conveyor 15 can be moved up and down in the vertical direction with the spindle of the conveyor 15, and each arm 151, 152 of the conveyor 15 can freely expand and contract in the horizontal direction. The two transfer arms 151, 152 of the conveying device 15 can be pointed in a certain direction at the same time, for example, simultaneously pointing to the same vacuum lock or the same processing chamber, or can be individually rotated to point in different directions, for example, the two transfer arms respectively point to the same Two different process racks of vacuum locks, or respectively directed to different two vacuum lock process racks; or one transfer arm pointing to a vacuum lock for taking or placing semiconductor workpieces into the vacuum lock, and another transfer The arm is directed to a processing chamber for taking or placing a semiconductor workpiece into the processing chamber; or the two transfer arms are respectively directed to two different processing chambers disposed on the side of the transfer chamber for respectively processing The semiconductor workpiece is taken or placed in the chamber. Therefore, the plurality of transfer arms of the transfer device of the present invention can flexibly perform the pick-and-place operation of the semiconductor workpiece separately, and can simultaneously load or unload two semiconductor workpieces from one or more vacuum locks, or continuously without waiting time. Loading, unloading or swapping of semiconductor workpieces into one or more processing chambers, particularly for semiconductor process processing systems incorporating multiple vacuum locks or processing chambers, thus throughput of the entire semiconductor process processing system (throughput) ) was greatly improved. Therefore, the transfer device 15 of the present invention only needs to adjust the vertical position of the transfer arms 151, 152 of the transfer device 15 during the workpiece exchange or loading and unloading process, the workpiece holder of the vacuum lock 2 and the workpiece exchange platform in the processing chamber 4. 25 is fixed in the vertical position, and the workpiece exchange is completed only by the movement of the conveying device 15.

請參看圖10,抽氣隔離板13與加熱基座19之間設有與每一抽氣隔離孔16相對應的工件交換平臺25。在如圖10所示之實施例中,該工件交換平臺25共有四對傳送臂37與四個抽氣隔離孔16相對應。該工件交換平臺25可旋轉使其每一對傳送臂37位於處理平臺5之上方,傳送臂37上方用以置放半導體工件,藉由配合圖3中之頂針19之動作,可很容易地將半導體工件自工件交換平臺25之傳送臂37上置放到加熱基座19上,或反之,將半導體工件自加熱基座19上置放到工件交換平臺25之傳送臂37上,此種工件之傳遞動作在先前技術中很普遍,可有多種方式,此處不詳述。該工件交換平臺25亦可旋轉使得其中一對與裝卸口23正對,以配合傳送室3內之傳送裝置15將工件置放於工件交換平臺25之一對傳送臂37上或自傳送臂37上卸載工件。Referring to FIG. 10, a workpiece exchange platform 25 corresponding to each of the suction isolation holes 16 is provided between the suction separation plate 13 and the heating base 19. In the embodiment shown in FIG. 10, the workpiece exchange platform 25 has a total of four pairs of transfer arms 37 corresponding to the four suction isolation holes 16. The workpiece exchange platform 25 is rotatable such that each pair of transfer arms 37 is located above the processing platform 5, and above the transfer arm 37 is used for placing a semiconductor workpiece, which can be easily assembled by the action of the ejector pin 19 in FIG. The semiconductor workpiece is placed onto the heating base 19 from the transfer arm 37 of the workpiece exchange platform 25, or conversely, the semiconductor workpiece is placed on the transfer arm 37 of the workpiece exchange platform 25 from the heating base 19, such a workpiece The transfer action is very common in the prior art, and there are many ways, which are not detailed here. The workpiece exchange platform 25 can also be rotated such that one of the pair faces the loading and unloading port 23 to fit the transfer device 15 in the transfer chamber 3 to one of the transfer arms 37 of the workpiece exchange platform 25 or from the transfer arm 37. Unload the workpiece.

處理完畢後,再將工件取出腔室。先配合圖3中之頂針19的動作,使工件落置於工件交換平臺25上之四對傳送臂37上。藉由轉動工件交換平臺25,使工件交換平臺25上之每一對傳送臂37依次移至正對工件裝卸口23之一側,再由傳送裝置15之傳送臂藉由工件裝卸口23自每一對傳送臂37上取出處理過之工件,並傳送至真空鎖2。After the treatment is completed, the workpiece is taken out of the chamber. First, in conjunction with the action of the ejector pin 19 in Fig. 3, the workpiece is placed on the four pairs of transfer arms 37 on the workpiece exchange platform 25. By rotating the workpiece exchange platform 25, each pair of transfer arms 37 on the workpiece exchange platform 25 is sequentially moved to one side of the workpiece loading and unloading port 23, and then the transfer arm of the transfer device 15 is driven by the workpiece loading and unloading port 23 The processed workpiece is taken out from a pair of transfer arms 37 and transferred to the vacuum lock 2.

下面結合所附圖式介紹傳送裝置裝卸工件之流程。如圖11所示,此處以兩個真空鎖201、202、一含有傳送裝置15之傳送室3以及兩個處理腔室401、402的結構為例。在本實施例中兩個真空鎖201、202各有四個槽(未圖示)。傳送裝置15具有兩個傳送臂151、152;兩個處理腔室401及402分別具有一裝卸口231、232正對傳送室3,處理腔室401、402內分別具有四個處理平臺,即處理平臺511、512、513、514以及處理平臺521、522、523、524。The flow of loading and unloading the workpiece by the conveyor will be described below in conjunction with the drawings. As shown in Fig. 11, here, the structure of two vacuum locks 201, 202, a transfer chamber 3 containing the transfer device 15, and two processing chambers 401, 402 is taken as an example. In the present embodiment, the two vacuum locks 201, 202 each have four slots (not shown). The conveying device 15 has two conveying arms 151, 152; the two processing chambers 401 and 402 respectively have a loading and unloading port 231, 232 facing the transfer chamber 3, and the processing chambers 401, 402 respectively have four processing platforms, that is, processing Platforms 511, 512, 513, 514 and processing platforms 521, 522, 523, 524.

一開始真空鎖201、202內各有四片工件,兩個處理腔室401、402內無工件。傳送裝置15利用其兩個傳送臂151、152分別自真空鎖201之兩個槽中拿出一片工件,此時兩個傳送臂151、152處於上下垂直位置。再將兩個傳送臂151、152在水平方向上旋轉至面向處理腔室401之裝卸口231處,接著調整傳送臂151之垂直位置,使其正對裝卸口231,並藉由前後伸縮傳送臂151將傳送臂151所持之工件放在工件交換平臺25上的一對傳送臂37上,工件交換平臺25旋轉四分之一圈;接下來傳送裝置15之另外一傳送臂152在垂直方向上調整至正對裝卸口231處,將傳送臂152所持之工件放在工件交換平臺25上的下一對傳送臂37上,工件交換平臺25再旋轉四分之一圈。而後傳送裝置15再返回原位,自真空鎖201之另外兩個槽中取出兩片工件,並將傳送臂151、152旋轉至正對裝卸口231處。重複前述過程,將工件先後放在工件交換平臺25上,工件交換平臺25旋轉一周後,四對傳送臂37上均承載有工件,再藉由工件交換平臺25之上下升降及配合頂針20的動作將工件一起放在處理平臺511、512、513、514上。如此完成一處理腔室401之工件裝載工作。再將傳送裝置15退至真空鎖202之位置,重複上述步驟完成處理腔室402之工件裝載工作。Initially, there are four workpieces in each of the vacuum locks 201, 202, and there are no workpieces in the two processing chambers 401, 402. The conveying device 15 takes out one piece of the workpiece from the two slots of the vacuum lock 201 by its two transfer arms 151, 152, respectively, and the two transfer arms 151, 152 are in the up and down vertical positions. The two transfer arms 151, 152 are further rotated in the horizontal direction to the loading and unloading opening 231 facing the processing chamber 401, and then the vertical position of the transfer arm 151 is adjusted so as to face the loading and unloading port 231, and the front and rear telescopic transfer arms are 151, the workpiece held by the transfer arm 151 is placed on a pair of transfer arms 37 on the workpiece exchange platform 25, and the workpiece exchange platform 25 is rotated by a quarter turn; then the other transfer arm 152 of the transfer device 15 is adjusted in the vertical direction. Up to the loading and unloading port 231, the workpiece held by the transfer arm 152 is placed on the next pair of transfer arms 37 on the workpiece exchange platform 25, and the workpiece exchange platform 25 is rotated a quarter turn. Then, the conveying device 15 returns to the original position, and two pieces of the workpiece are taken out from the other two grooves of the vacuum lock 201, and the conveying arms 151, 152 are rotated to face the loading and unloading port 231. The foregoing process is repeated, and the workpieces are successively placed on the workpiece exchange platform 25. After the workpiece exchange platform 25 is rotated one week, the four pairs of transfer arms 37 are loaded with the workpieces, and then the workpiece exchange platform 25 is lifted up and down and the ejector pins 20 are engaged. The workpieces are placed together on the processing platforms 511, 512, 513, 514. The workpiece loading work of a processing chamber 401 is thus completed. The conveyor 15 is then retracted to the position of the vacuum lock 202, and the above steps are repeated to complete the workpiece loading operation of the processing chamber 402.

裝載完成後,真空鎖201、202可藉由需要自工件匣中重新裝載工件。以上實施例中,真空鎖201、202中之工件取放之順序係自由的,並不一定需要自上而下或自下而上。After the loading is completed, the vacuum locks 201, 202 can be reloaded from the workpiece by requiring the workpiece to be reloaded. In the above embodiment, the order of picking and placing the workpieces in the vacuum locks 201, 202 is free, and does not necessarily need to be from top to bottom or bottom to top.

處理腔室401、402處理完成後,需要將處理腔室401、402中之已處理過的工件取出,並換上未處理之工件。具體過程如下:傳送裝置15自真空鎖201中用其傳送臂152自真空鎖201中之一槽中取出一片未處理的工件,將傳送裝置15旋轉至處理腔室401之裝卸口231處。此時假設傳送臂152在傳送臂151下方,傳送臂151正對裝卸口231。傳送臂151自工件交換平臺25上正對裝卸口231之一對傳送臂37上取出一片處理過的工件,取走後,正對裝卸口231之一對傳送臂37上無工件,可等待放入一片新的未處理之工件,接著,傳送臂152上升到正對裝卸口231之位置,並將其自真空鎖中取出之一片新的未處理之工件放在工件交換平臺25上剛取走處理過的工件之一對傳送臂37上,從而可只藉由傳送裝置15之上下傳送臂151、152的動作,在工件交換平臺25之同一對傳送臂37上用一片新的未處理之工件來換上一片處理過的工件。然後,工件交換平臺25再旋轉四分之一圈。傳送裝置15返回原位,其傳送臂151將其自工件交換平臺25上取到之工件放在真空鎖201中的槽中,傳送臂152再自真空鎖201中之另一槽中取出一片工件。重複以上步驟,直到一處理腔室之四片工件全部交換完成後,工件交換平臺25再統一將工件置放到處理平臺上。緊接著再進行處理腔室402之工件交換工作。After the processing chambers 401, 402 are processed, the processed workpieces in the processing chambers 401, 402 need to be removed and replaced with unprocessed workpieces. The specific process is as follows: The conveying device 15 takes out an unprocessed workpiece from a slot in the vacuum lock 201 from the vacuum lock 201 with its transfer arm 152, and rotates the conveying device 15 to the loading and unloading port 231 of the processing chamber 401. At this time, it is assumed that the transfer arm 152 is below the transfer arm 151, and the transfer arm 151 is facing the loading and unloading port 231. The transfer arm 151 takes out a piece of processed workpiece from the transfer arm 37 on the workpiece exchange platform 25 opposite to the loading and unloading port 231. After being removed, there is no workpiece on the transfer arm 37 of the pair of loading and unloading ports 231, and can be waited for A new unprocessed workpiece is inserted, and then the transfer arm 152 is raised to the position facing the loading and unloading port 231, and a new unprocessed workpiece is taken out from the vacuum lock and placed on the workpiece exchange platform 25. One of the processed workpieces is placed on the transfer arm 37 so that a new unprocessed workpiece can be used on the same pair of transfer arms 37 of the workpiece exchange platform 25 by only the action of the transfer arms 151, 152 above and below the transfer device 15. Replace it with a piece of processed workpiece. The workpiece exchange platform 25 is then rotated a quarter turn. The conveying device 15 returns to the original position, and its conveying arm 151 places the workpiece taken from the workpiece exchange platform 25 in the groove in the vacuum lock 201, and the conveying arm 152 takes out a workpiece from the other groove in the vacuum lock 201. . The above steps are repeated until the four pieces of workpieces in one processing chamber are all exchanged, and the workpiece exchange platform 25 unifies the workpiece on the processing platform. The workpiece exchange operation of the processing chamber 402 is then performed.

真空鎖設計之另外一較佳實施例係將真空鎖設計成兩層,其中上層為交換層用於工件之傳送及交換,而下層則設有易於散熱之石英墊,如此之設計可加快工件之冷卻速度。假定有4片工件在處理腔室中處理。工廠介面1會置放一未處理之工件在交換層,傳送裝置15用傳送臂152自真空鎖之交換層中取出未處理之工件並旋轉至處理腔室401的裝卸口231位置。傳送臂151正對裝卸口231,傳送臂152在傳送臂151下方。傳送臂151將工件交換平臺25上處理完之工件取出,然後傳送臂152上升至正對裝卸口231之位置,將其自真空鎖中取出之工件放在工件交換平臺25上,工件交換平臺25轉動四分之一。傳送裝置15旋轉至真空鎖202,傳送臂151將處理完之工件放入其冷卻層,傳送臂152自真空鎖202之交換層中揀起一處新的未處理之工件。真空鎖201及202之交換層自工廠介面1取得新的未處理工件。真空鎖202之冷卻層冷卻該工件並送至非真空環境中以便工廠介面1拾取。以上完成了一片工件之交換。接著傳送裝置15在完成交換後又返回真空鎖201。重複同樣的步驟,直至處理腔室401中之工件交換完成,再進行處理腔室402之工件交換過程。Another preferred embodiment of the vacuum lock design is to design the vacuum lock into two layers, wherein the upper layer is an exchange layer for workpiece transfer and exchange, and the lower layer is provided with a quartz pad that is easy to dissipate heat, so that the design can accelerate the workpiece. Cooling rate. It is assumed that there are 4 workpieces processed in the processing chamber. The factory interface 1 places an unprocessed workpiece in the exchange layer, and the transfer device 15 removes the unprocessed workpiece from the vacuum lock exchange layer by the transfer arm 152 and rotates to the position of the loading and unloading port 231 of the processing chamber 401. The transfer arm 151 faces the loading and unloading port 231, and the transfer arm 152 is below the transfer arm 151. The transfer arm 151 takes out the processed workpiece on the workpiece exchange platform 25, and then the transfer arm 152 rises to the position facing the loading and unloading port 231, and places the workpiece taken out from the vacuum lock on the workpiece exchange platform 25, and the workpiece exchange platform 25 Turn a quarter. The transfer device 15 is rotated to a vacuum lock 202 which places the processed workpiece into its cooling layer and the transfer arm 152 picks up a new unprocessed workpiece from the exchange layer of the vacuum lock 202. The exchange layers of the vacuum locks 201 and 202 take new unprocessed workpieces from the factory interface 1. The cooling layer of the vacuum lock 202 cools the workpiece and sends it to a non-vacuum environment for picking up by the factory interface 1. The above completed the exchange of a piece of work. The conveyor 15 then returns to the vacuum lock 201 after the exchange is completed. The same steps are repeated until the exchange of workpieces in the processing chamber 401 is completed, and the workpiece exchange process of the processing chamber 402 is performed.

以上實施例中僅介紹了具有四個處理平臺之處理腔室,對於每一處理腔室具有其他數目個處理平臺之半導體製程處理系統亦可依上例簡單類推出其裝卸方法。In the above embodiment, only the processing chambers with four processing platforms are introduced. For the semiconductor processing system with other processing platforms for each processing chamber, the loading and unloading method can also be introduced according to the simple example of the above.

由於本發明之傳送裝置具有至少兩個位於上下位置關係之傳送臂,並且傳送臂可沿傳送裝置主軸在垂直方向上調節其上下位置,因此,在傳送裝置自真空鎖或處理腔室內拾取工件時,可只藉由傳送裝置之運動,而不需要真空鎖或處理腔室在垂直方向調整,即可完成工件裝卸或交換動作。詳言之,半導體製程處理系統在工件裝卸或交換之過程中,只需要調節傳送裝置之多個傳送臂在垂直方向的位置,而不需要如先前技術中之半導體製程處理系統要調整真空鎖或處理腔室在垂直方向的位置。並且,只藉由傳送裝置之上下傳送臂的動作,使之分別對準處理腔室之裝卸口,可很容易地在處理腔室內之工件交換平臺的同一對傳送臂上用一片新的未處理之工件來換上一片處理過之工件,從而可更加迅速及低成本地裝卸及交換工件,提高產能。Since the conveying device of the present invention has at least two transfer arms in an up and down positional relationship, and the transfer arm can adjust its up and down position in the vertical direction along the transfer device main shaft, when the transfer device picks up the workpiece from the vacuum lock or the processing chamber The workpiece loading and unloading or exchange action can be completed only by the movement of the conveying device without the need of a vacuum lock or a vertical adjustment of the processing chamber. In particular, the semiconductor process processing system only needs to adjust the position of the plurality of transfer arms of the transfer device in the vertical direction during the loading or unloading or exchange of the workpiece, without the need to adjust the vacuum lock or the semiconductor process processing system as in the prior art. The position of the processing chamber in the vertical direction. Moreover, it is easy to use a new unprocessed on the same pair of transfer arms of the workpiece exchange platform in the processing chamber by merely aligning the upper and lower transfer arms of the transfer device to the loading and unloading ports of the processing chamber. The workpiece is replaced with a piece of processed workpiece, so that the workpiece can be loaded and unloaded and exchanged more quickly and at low cost, thereby increasing productivity.

本發明運用上述之傳送裝置於半導體製程處理系統中,具有很多優點:與先前技術(美國專利第5855681號)所揭露之雙刀片雙臂(dual blades dual arms)之傳送裝置相比,本發明之傳送裝置的製作成本更低,且在傳送半導體工件之過程中,定位更靈活且準確度更高;另外,本發明之傳送裝置的至少兩個傳送臂係沿主軸上下設置的,不同於先前技術之傳送裝置之雙臂係依水平方向設置的,因而本發明之傳送室可設置得很小,不僅便於傳送室之設計,而且使整個半導體製程處理系統之占地面積變小,大大降低製造成本及維護成本。再者,本發明之傳送裝置的多個傳送臂可靈活地單獨執行半導體工件之取放動作,可同時自一或多個真空鎖內裝載或卸載兩片半導體工件,亦可連續地無等待時間地向一或多個處理腔室內完成半導體工件之裝載、卸載或交換動作,尤其適用於整合有多個真空鎖或處理腔室之半導體製程處理系統,因而整個半導體製程處理系統之產出量被大大提高。The present invention has a number of advantages in utilizing the above-described transfer device in a semiconductor process processing system: compared to a dual blade dual arms transfer device disclosed in the prior art (U.S. Patent No. 5,855, 568), the present invention The transfer device is less expensive to manufacture, and the positioning is more flexible and more accurate during the transfer of the semiconductor workpiece; in addition, at least two transfer arms of the transfer device of the present invention are disposed above and below the main axis, different from the prior art The arms of the conveyor are arranged in a horizontal direction, so that the transfer chamber of the present invention can be set small, which not only facilitates the design of the transfer chamber, but also reduces the footprint of the entire semiconductor process processing system, greatly reducing the manufacturing cost. And maintenance costs. Furthermore, the plurality of transfer arms of the transfer device of the present invention can flexibly perform the pick-and-place operation of the semiconductor workpiece separately, and can simultaneously load or unload two semiconductor workpieces from one or more vacuum locks, or continuously without waiting time. Loading, unloading or exchanging semiconductor workpieces into one or more processing chambers, especially for semiconductor process processing systems incorporating multiple vacuum locks or processing chambers, so that the throughput of the entire semiconductor process processing system is Greatly improve.

以上介紹之僅為基於本發明之幾個較佳實施例,並不能以此來限定本發明之範圍。任何對本發明之裝置作本技術領域內熟知之部件之替換、組合、分立,以及對本發明實施步驟作本技術領域內熟知之等同改變或替換均不超出本發明之揭示以及保護範圍。The above description is only based on several preferred embodiments of the present invention and is not intended to limit the scope of the present invention. Any alterations, combinations, and variations of the components of the present invention which are well-known in the art may be made without departing from the scope of the invention and the scope of the invention.

1...工廠介面1. . . Factory interface

2...真空鎖2. . . Vacuum lock

3...傳送室3. . . Transfer room

4...處理腔室4. . . Processing chamber

5...處理平臺5. . . Processing platform

6...反應氣體供應裝置6. . . Reaction gas supply device

7...控制、排氣以及動力裝置7. . . Control, exhaust and powerplant

8...腔室頂蓋8. . . Chamber cover

9...凹陷部9. . . Depression

10...延伸部10. . . Extension

11...噴淋頭11. . . Sprinkler

12...細孔12. . . Fine hole

13...抽氣隔離板13. . . Pumping insulation board

14...排氣口14. . . exhaust vent

15...傳送裝置15. . . Conveyor

16...抽氣隔離孔16. . . Pumping isolation hole

17...排氣槽17. . . Exhaust tank

18...腔室基盤18. . . Chamber base

19...加熱基座19. . . Heating base

20...頂針20. . . thimble

20'...軸孔20'. . . Shaft hole

21...排氣通道twenty one. . . Exhaust passage

22...排氣裝置twenty two. . . Exhaust

23...裝卸口twenty three. . . Loading and unloading port

24...放射狀槽twenty four. . . Radial slot

25...交換平臺25. . . Exchange platform

27...連接槽27. . . Connection slot

31...中心軸31. . . The central axis

31'...軸孔31'. . . Shaft hole

33...轉軸孔33. . . Shaft hole

33'...軸孔33'. . . Shaft hole

37...傳送臂37. . . Transfer arm

101...批量處理系統101. . . Batch processing system

102...處理腔室102. . . Processing chamber

103...處理平臺103. . . Processing platform

111...傳送室111. . . Transfer room

112...系統112. . . system

113...處理腔室113. . . Processing chamber

151...傳送臂151. . . Transfer arm

152...傳送臂152. . . Transfer arm

201...真空鎖201. . . Vacuum lock

202...真空鎖202. . . Vacuum lock

231...裝卸口231. . . Loading and unloading port

232...裝卸口232. . . Loading and unloading port

401...處理腔室401. . . Processing chamber

402...處理腔室402. . . Processing chamber

511...處理平臺511. . . Processing platform

512...處理平臺512. . . Processing platform

513...處理平臺513. . . Processing platform

514...處理平臺514. . . Processing platform

521...處理平臺521. . . Processing platform

522...處理平臺522. . . Processing platform

523...處理平臺523. . . Processing platform

524...處理平臺524. . . Processing platform

圖1為本發明半導體製程處理系統之立體結構示意圖。1 is a schematic perspective view of a semiconductor process processing system of the present invention.

圖2為本發明半導體製程處理系統在省略處理腔室頂蓋時之俯視圖。2 is a top plan view of the semiconductor process processing system of the present invention with the processing chamber top cover omitted.

圖3為本發明半導體製程處理系統之處理腔室的結構分解示意圖。3 is a schematic exploded view showing the structure of a processing chamber of a semiconductor process processing system of the present invention.

圖4為本發明半導體製程處理系統之一處理腔室在腔室頂蓋打開狀態時的示意圖。4 is a schematic view of a processing chamber of one of the semiconductor process processing systems of the present invention in a state in which the chamber top cover is open.

圖5為本發明半導體製程處理系統之腔室基盤的底面示意圖。5 is a schematic bottom view of a chamber base of a semiconductor process processing system of the present invention.

圖6為本發明處理腔室之抽氣隔離板的結構示意圖。Figure 6 is a schematic view showing the structure of the suction partitioning plate of the processing chamber of the present invention.

圖7為圖4中所示之腔室基盤沿I-I線剖開的剖視圖。Figure 7 is a cross-sectional view of the chamber base shown in Figure 4 taken along line I-I.

圖8為本發明真空鎖及傳送室之結構示意圖。Figure 8 is a schematic view showing the structure of a vacuum lock and a transfer chamber of the present invention.

圖9為本發明之傳送裝置位於處理腔室內的俯視圖。Figure 9 is a top plan view of the transfer device of the present invention positioned within the processing chamber.

圖10為本發明之工件交換平臺位於處理腔室內的俯視圖。Figure 10 is a top plan view of the workpiece exchange platform of the present invention located within the processing chamber.

圖11為本發明之半導體工件裝載過程示意圖。Figure 11 is a schematic view showing the loading process of the semiconductor workpiece of the present invention.

圖12為一現有半導體製程處理系統之示意圖。12 is a schematic diagram of a conventional semiconductor process processing system.

圖13為另一現有半導體製程處理系統之示意圖。Figure 13 is a schematic illustration of another prior art semiconductor process processing system.

1...工廠介面1. . . Factory interface

2...真空鎖2. . . Vacuum lock

3...傳送室3. . . Transfer room

4...處理腔室4. . . Processing chamber

5...處理平臺5. . . Processing platform

6...反應氣體供應裝置6. . . Reaction gas supply device

7...控制、排氣以及動力裝置7. . . Control, exhaust and powerplant

8...腔室頂蓋8. . . Chamber cover

9...凹陷部9. . . Depression

10...延伸部10. . . Extension

11...噴淋頭11. . . Sprinkler

12...細孔12. . . Fine hole

13...抽氣隔離板13. . . Pumping insulation board

15...傳送裝置15. . . Conveyor

24...放射狀槽twenty four. . . Radial slot

Claims (13)

一種半導體處理腔室,包括多個處理平臺,其中亦包括一抽氣隔離板置放在處理平臺上,該抽氣隔離板具有多個與處理平臺對應的抽氣隔離孔,在半導體處理過程中,藉由抽氣隔離孔使得各處理平臺之反應環境相互隔離。 A semiconductor processing chamber includes a plurality of processing platforms, and further includes a pumping isolation plate disposed on the processing platform, the pumping spacer having a plurality of pumping isolation holes corresponding to the processing platform during semiconductor processing The reaction environments of the processing platforms are isolated from each other by evacuating the isolation holes. 如請求項1之半導體處理腔室,其中處理腔室亦包括腔室頂蓋及腔室基盤,處理平臺設置於腔室基盤內,抽氣隔離板設置於腔室頂蓋與腔室基盤之間。 The semiconductor processing chamber of claim 1, wherein the processing chamber further comprises a chamber top cover and a chamber base, the processing platform is disposed in the chamber base, and the suction isolation plate is disposed between the chamber top cover and the chamber base . 如請求項2之半導體處理腔室,其中腔室頂蓋具有若干凸起之帶有細孔的噴淋頭。 The semiconductor processing chamber of claim 2, wherein the chamber top cover has a plurality of raised showerheads with fine holes. 如請求項3之半導體處理腔室,其中該抽氣隔離板上之抽氣隔離孔與該噴淋頭相對應,並且在半導體工件處理過程中,噴淋頭緊靠抽氣隔離板之抽氣隔離孔。 The semiconductor processing chamber of claim 3, wherein the suction isolation hole on the suction isolation plate corresponds to the shower head, and in the process of processing the semiconductor workpiece, the shower head abuts against the suction isolation plate Isolation hole. 如請求項4之半導體處理腔室,其中在抽氣隔離板下方之腔室基盤中具有與每一抽氣隔離孔相對應的加熱基座,該對應的噴淋頭、抽氣隔離孔及加熱基座形成處理平臺。 The semiconductor processing chamber of claim 4, wherein the chamber base below the suction isolation panel has a heating base corresponding to each of the suction isolation holes, the corresponding shower head, the suction isolation hole, and the heating The pedestal forms a processing platform. 如請求項1之半導體處理腔室,其中抽氣隔離孔之周邊設有若干放射狀槽,該放射狀的槽之分佈為靠近抽氣隔離板周邊之一側較靠近抽氣隔離板中心的一側疏。 The semiconductor processing chamber of claim 1, wherein the periphery of the suction isolation hole is provided with a plurality of radial grooves, and the radial grooves are distributed near one of the peripheral sides of the suction isolation plate and closer to the center of the suction insulation plate. Side sparse. 如請求項2之半導體處理腔室,其中該腔室頂蓋上設置有凹陷部,且凹陷部周邊設有延伸部。 The semiconductor processing chamber of claim 2, wherein the chamber top cover is provided with a recessed portion, and the recessed portion is provided with an extension portion. 如請求項7之半導體處理腔室,其中該抽氣隔離板周圍 亦設置有與腔室頂蓋之凹陷部的延伸部相連通之排氣口。 The semiconductor processing chamber of claim 7, wherein the pumping separator is surrounded An exhaust port is also provided in communication with the extension of the recess of the chamber top cover. 如請求項8之半導體處理腔室,其中抽氣隔離板之周圍設有多個對稱的排氣口。 A semiconductor processing chamber according to claim 8 wherein a plurality of symmetrical exhaust ports are provided around the evacuation barrier. 如請求項2之半導體處理腔室,其中在腔室基盤上靠近抽氣隔離板周圍設有至少一用於排氣之排氣槽。 A semiconductor processing chamber according to claim 2, wherein at least one venting groove for exhausting is provided on the chamber base adjacent to the venting partition. 如請求項10之半導體處理腔室,其中腔室基盤底部設有與該排氣槽相通之排氣通道,該排氣通道與排氣裝置相連。 The semiconductor processing chamber of claim 10, wherein the bottom of the chamber base is provided with an exhaust passage communicating with the exhaust passage, the exhaust passage being connected to the exhaust. 如請求項11之半導體處理腔室,其中該處理腔室中氣流流向為:反應氣體由噴淋頭送入每一處理平臺,對置放在加熱基座上之半導體工件進行處理,由於進氣系統之氣壓以及排氣裝置對反應氣體之抽取,反應氣體自每一處理平臺之抽氣隔離板的放射狀槽中流出,進入腔室頂蓋之凹陷部,並向凹陷部之延伸部流動,經抽氣隔離板之周圍的排氣口流至腔室基盤之排氣槽中,再藉由與排氣槽相通之排氣通道進入排氣裝置。 The semiconductor processing chamber of claim 11, wherein the flow of the gas in the processing chamber is: the reaction gas is sent from the shower head to each processing platform, and the semiconductor workpiece placed on the heating base is processed due to the intake air. The air pressure of the system and the extraction of the reaction gas by the exhaust device, the reaction gas flows out from the radial groove of the suction isolation plate of each processing platform, enters the concave portion of the top cover of the chamber, and flows to the extension portion of the concave portion, The exhaust port around the suction isolation plate flows into the exhaust groove of the chamber base, and then enters the exhaust device through the exhaust passage communicating with the exhaust groove. 如請求項12之半導體處理腔室,其中加熱基座底部通有惰性氣體以防止微粒塵埃在加熱基座下方沉積及薄膜生長。 The semiconductor processing chamber of claim 12, wherein the bottom of the heated susceptor is filled with an inert gas to prevent particulate dust from depositing under the heated pedestal and film growth.
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