TW200949899A - Semiconductor processing chamber - Google Patents

Semiconductor processing chamber Download PDF

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Publication number
TW200949899A
TW200949899A TW98125566A TW98125566A TW200949899A TW 200949899 A TW200949899 A TW 200949899A TW 98125566 A TW98125566 A TW 98125566A TW 98125566 A TW98125566 A TW 98125566A TW 200949899 A TW200949899 A TW 200949899A
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Taiwan
Prior art keywords
chamber
processing
workpiece
transfer
processing chamber
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TW98125566A
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Chinese (zh)
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TWI413153B (en
Inventor
Steve Chen
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Advanced Micro Fab Equip Inc
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Priority to TW98125566A priority Critical patent/TWI413153B/en
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Publication of TWI413153B publication Critical patent/TWI413153B/en

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Abstract

A semiconductor processing system comprising load lock, transfer chamber and one or several processing chambers. The transfer chamber is between load lock and processing chambers, and processing chambers can be placed around the transfer chamber. The transfer chamber is equipped with transferring apparatus. This invention can complete the loading and exchanging job of workpieces only by the movements of transferring apparatus, and without the vertical movements of lad lock or processing chambers. Thus the loading and exchanging of workpieces can be faster and cheaper, and the throughput can be raised. In this invention, a processing chamber with specially designed intake and exhaust system is published. With reactant gas screens forming among the processing stations in the processing chamber, the uniformity of the processing stations can be improved, thus the cross-interference of reactant gases between different processing stations can be avoided.

Description

200949899 六、發明說明: 【發明所屬之技術領域】 本發明係關於半導體製造設備技術領域,尤其係關於一 種半導體製程處理系統及其處理方法。 【先前技術】 目前有兩種常用的半導體製程處理系統,一種係對工件 進行批量處理之系統,而另一種則對工件進行單片處理。 在批量處理系統中,多片工件被同時水平地或垂直地置放 並進行處理。 由於裝置内同時處理多片工件’因此工件之間的間距極 為有限。此需要以低氣壓處理來消除氣體壓力梯度,一般 而言’在工件間距大於其厚度四分之一的情況下,壓力應 §小於500毫托’而此時之沉積速率會小於1 〇〇八/瓜。此 意謂需要更長的加工時間。 雖然單片處理系統在產品處理均一性、熱效應以及單批 加工速度方面具有優勢,但其低產能以及昂貴的生產成本 顯然係難以克服的致命缺陷。 為解決以上問題美國專利第5855681號之背景部分提供 了 一種批量處理之系統。如圖12所示,此種批量處理系統 101具有處理腔室102,處理腔室中2〇2具有多個處理平臺 103’如此處理腔室102就可同時一次處理多片工件,而不 必考量工件之間的間距問題。 但此類系統亦同樣存在某些問題,而影響工件的處理速 度及品質,不能有效地進行大批量工件之同時處理。其 141659.doc 200949899 中’主要影響處理品皙的 A ^ 質的問碭在於各個處理平臺之處理條 件的均一性。處理條件 ’、 ”牛之均一性主要有兩方面的影響, 反應氣體及溫度。_般若虑 右處理千臺之間密閉,則形成平軎 之間的熱隔絕,各處理IA 量 * 處理千臺之間的溫度均一難以控制;若 處理平臺之間不密閉, , 各處理平臺之間的反應氣體可能 形成相互交互干擾,旦鄉 〜響各處理平臺之間處理氣氛的均_ 性。 因此’目前的包含多個虚揮 夕1U慝理千臺之處理腔室仍不能 地進行大批量工件之同時處理。 此外’美國專利第6_65號提供 理系統。如圖13所千外么 什批量處 … 簡化傳送室111,實現機台 較小的占地面積。但該系統裝載系統m複雜,工件裝載 速度較慢,工料需要留出―段時間詩等待工件2 卸’影響生產效率。此雲盈担乂衫 . 匕需要提供一種快速的工件装卸梦f 及方法’以減少裝卸過程等 率。 μ等待時間,加快工件處理效 同時該專利中之工件虛採骷 τι件慝理裝置只能擁有一處理腔官 113。因此減小了每一機么处 J母機〇犯夠同時處理的工件 增加了生產成本。 量’ 除此以外,現有的工件批量處理裝置亦存在_ ::機械結構複雜,不易維護’且傳送裝置在裝卸或二 、工件時,傳送成本較高,使得單位產能下降。— 【發明内容】 本發明之目的在於提供一種解決目前工件量產裝置可靠 141659.doc 200949899 十生不古 她 阿、機械結構複雜之問題的半導體製程處理系統。 系:發Γ系藉由以下技術方法實現:一種半導體製程處理 、、匕括傳送室及處理腔室,傳送室設有傳送裝置,處 理:室具有裝卸口,該傳送裝置具有至少兩個可分別伸縮 ^專送臂’該傳送臂可同時指向該處理腔室之同—裝卸 口 ’並且可分別在垂直方向調整至正對該同一裝卸口之位 置,以完成工件之取放。200949899 VI. Description of the Invention: [Technical Field] The present invention relates to the field of semiconductor manufacturing equipment, and more particularly to a semiconductor processing system and a processing method thereof. [Prior Art] There are currently two commonly used semiconductor process processing systems, one for batch processing of workpieces and the other for single-piece processing of workpieces. In a batch processing system, multiple pieces of workpiece are placed horizontally or vertically and processed. Since the multiple pieces of the workpiece are processed simultaneously in the apparatus, the spacing between the workpieces is extremely limited. This requires low pressure treatment to eliminate the gas pressure gradient. Generally speaking, 'in the case where the workpiece pitch is more than a quarter of its thickness, the pressure should be less than 500 mTorr' and the deposition rate will be less than 1 〇〇8. /melon. This means that longer processing time is required. While monolithic processing systems have advantages in product handling uniformity, thermal effects, and single batch processing speeds, their low throughput and costly production costs are clearly fatal defects that are difficult to overcome. In order to solve the above problem, a background processing system is provided in the background section of U.S. Patent No. 5,855,681. As shown in FIG. 12, the batch processing system 101 has a processing chamber 102. The processing chamber has a plurality of processing platforms 103'. Thus, the processing chamber 102 can simultaneously process a plurality of workpieces without considering the workpiece. The problem between the spacing. However, such systems also have certain problems, which affect the processing speed and quality of the workpiece, and cannot effectively process large batches of workpieces at the same time. Its 141659.doc 200949899's main problem affecting the quality of processing products is the uniformity of the processing conditions of each processing platform. The treatment conditions ', 'the cow's homogeneity mainly has two aspects, the reaction gas and the temperature. _                                       The temperature uniformity between them is difficult to control; if the processing platforms are not sealed, the reaction gases between the processing platforms may form mutual interaction interference, and the processing atmosphere between the processing platforms will be the same. The processing chamber containing a plurality of imaginary 1U 千 台 仍 仍 still can not handle the simultaneous processing of large quantities of workpieces. In addition, 'US Patent No. 6_65 provides a rational system. As shown in Figure 13, the volume is in the batch... Simplified The transfer chamber 111 realizes a small footprint of the machine. However, the loading system of the system is complicated, the loading speed of the workpiece is slow, and the work material needs to leave a period of time to wait for the workpiece 2 to be unloaded, which affects the production efficiency.衫. 匕 Need to provide a fast workpiece handling dream and method 'to reduce the loading and unloading process rate. μ waiting time, speed up the workpiece processing efficiency and the patent in this patent 虚 骷 骷The processing device can only have one processing chamber 113. Therefore, reducing the number of workpieces that are processed at the same time in each machine is increased. The quantity is 'In addition, the existing workpiece batch processing device also exists. _ :: The mechanical structure is complicated and difficult to maintain 'and the transfer device is loaded or unloaded or the workpiece is high, so the transmission cost is high, so that the unit capacity is reduced. - [Disclosed] The object of the present invention is to provide a solution for solving the current mass production apparatus 141659.doc 200949899 The semiconductor process processing system of the problem of complex mechanical structure. The system is realized by the following technical methods: a semiconductor process, a transfer chamber and a processing chamber. The chamber is provided with a conveying device, and the processing chamber has a loading and unloading port, and the conveying device has at least two telescopic arms respectively. The conveying arm can simultaneously point to the same-loading port of the processing chamber and can be respectively in the vertical direction. Adjust to the position of the same loading and unloading port to complete the pick and place of the workpiece.

其中該等兩個傳送臂處於指向裝卸口之上下位置。該等 兩個傳送臂可在傳送室及處理腔室之間的水平面上旋轉, 並且傳送裝置之兩個傳送臂可隨傳送裝置之主軸上下移 動,傳送裝置之每一傳送臂均可自自地前後伸縮。 "亥半導體製程處理系統亦包括至少一真空鎖,該真空鎖 叹有多個工件架,該傳送臂可同時指向真空鎖之不同工件 架之位置’以完成工件之取放。每一真空鎖設有兩個或四 個工件架。真空鎖分為上下兩層,處於下層之工件架設有 易於散熱之墊片用以增強散熱效果。The two transfer arms are located above and below the loading and unloading port. The two transfer arms are rotatable on a horizontal plane between the transfer chamber and the processing chamber, and the two transfer arms of the transfer device can move up and down with the spindle of the transfer device, and each transfer arm of the transfer device can be self-propelled Flex before and after. The "Hai Semiconductor Process Processing System also includes at least one vacuum lock that has a plurality of workpiece holders that can simultaneously point to the position of the different workpiece holders of the vacuum lock to complete the pick and place of the workpiece. Each vacuum lock has two or four workpiece holders. The vacuum lock is divided into upper and lower layers, and the workpiece rack in the lower layer is provided with a gasket which is easy to dissipate heat to enhance the heat dissipation effect.

本發明之另一目的在於提供一種解決目前工件量產裝置 處理均一不高、不能高品質地進行工件批量處理之問題的 半導體製程處理系統。 本發明藉由以下技術方法實現上述目的:一種半導體處 理腔室,包括多個處理平臺,處理平臺周園設有用於排氣 之放射狀的槽,處理腔室周圍設有排氣通道,處理腔室之 排氣通道及處理平臺之放射狀的槽相連通,構成—排氣系 統0 141659.doc 200949899 其中,該處理腔室包括腔室頂蓋及腔室基盤,—抽氣隔 離板設置於腔室頂蓋與腔室基盤之間,其中腔室頂蓋具有 若干凸起之噴淋頭,該抽氣隔離板上具有與該噴淋頭對應 的若干抽氣隔離孔,在抽氣隔離板下方的腔室基盤中具有 與每一抽氣隔離孔相對應的加熱基座,該對應的噴淋頭、 抽氣隔離孔及加熱基座形成處理平臺。抽氣隔離板之周邊 設有多個放射狀的槽。該放射狀的槽之分佈為靠近抽氣隔 m 參 離板周邊之-側較靠近抽氣隔離盤中心的一側疏。抽氣隔 離板周圍亦設置有與腔室頂蓋之凹陷部的延伸部相對應的 多個排氣口。 〜 在腔室基盤上設有至少一用於排氣之排氣槽,且排氣槽 與抽氣隔離板之排氣口相連通。腔室基盤底部設有與該排 氣槽相通之排氣通道,該排氣通道與排氣裝置相連。 處理平臺周圍排出之氣流形成的氣幕形成過程為:氣體 由本發明之噴淋頭送入每一處理平臺,由於進氣系統之氣 壓以及排氣裝置對氣體之抽取,氣體自每一處理平臺之放 射狀槽中流出,由於氣壓的作用,氣體之流速可很快,在 處理平臺周圍形成氣幕。加熱基座周圍設有向上噴射之惰 性氣體氣幕。 、,另一技術方案I·· 一種半導體處理腔室,&括多個處理 平臺’亦包括-抽氣隔離板置放在處理平臺上,該抽氣隔 離板具有多個與處理平臺對應的抽氣隔離孔,在半導體處 理過程中’藉由抽氣隔離孔使得各處理平臺之反應環境相 互隔離。 141659.doc 200949899 其中,該半導體處理腔室亦包括腔室頂蓋及腔室基盤, 處理平臺設置於腔室基盤内,抽氣隔離板設置於腔室頂蓋 與腔室基盤之間。其中腔室頂蓋具有若干凸起之帶有細孔 的噴淋頭。該抽氣隔離板上之抽氣隔離孔與該噴淋頭相對 應,並且在+導體工件處理過程中,纟淋頭緊靠抽氣隔離 板之抽氣隔離孔。在抽氣隔離板下方的腔室基盤中具有與 每一抽氣隔離孔相對應的加熱基座,該對應的喷淋頭、抽 氣隔離孔及加熱基座形成處理平臺。抽氣隔離孔之周邊設 有若干放射狀槽’該放射狀的槽之分佈為靠近抽氣隔離板 周邊之債!較罪近抽氣隔離板中心的一側疏。抽氣隔離板 周圍亦》又置有與腔室頂蓋之凹陷部的延伸部相對應的多個 2氣口。抽氣隔離板之周圍設有多個對稱的排氣口。在腔 至基盤上靠近抽氣隔離板周圍設有至少—用於排氣之排氣 槽。腔室基盤底部設有與該排氣槽相通之排氣通道,該排 氣通道與排氣裝置相連。 〆處里腔至中氧流流向為:反應氣體由嘴淋頭送入每一 處理平臺,對置放在加熱基座上之半導體工件進行處理, 由:進氣系統之氣壓以及排氣裝置對反應氣體之抽取,反 應氣體自每—處理平臺之抽氣隔離板的放射狀槽中流出, 進,腔室頂蓋之凹陷部’並向凹陷部之延伸部流動,經抽 乳隔離板之周圍的排氣口流至腔室基盤之排氣槽中,再藉 由與排氣槽相通之排氣通道進入排氣裝置。 腔室基盤正對傳送室一側設有用於裝卸工件之裝卸口。 加熱基座底部通有惰性氣體以防止微粒塵埃在加熱基座下 141659.doc 200949899 方沉積及薄膜生長。 本發明之再一目的在於提供一種解決目前工件量產裝置 工件裝卸速度慢,工件處理效率低之問題的處理系統。 本發明藉由以下技術方法實現上述目的:—種半導體製 程處理系統之工件的傳遞方法,該半導體製程處理系統包 括傳送室及處理腔室,傳送室内設置有傳送裝置,該傳送 裝置具有至少兩個位於上下位置且可分別沿水平方向伸縮 9 之傳送臂,該方法包括:⑴傳送裝置之一傳送臂自處理腔 室内的一工件裝卸口取出一片 月工件,(2)緊跟步驟⑴完成 :’專送裝置之另外一傳送臂將另外一片工件藉由該工件 裝卸口放入處理腔室内。 =,該傳送裝置可在傳送室内之水平面上旋轉。傳送 置每次藉由工件之移動。傳送裝 =理系:亦包括真空鎖,傳送裝置每次在真空鎖中可取 ffi兩月工件。 工術方案為:一種半導體製程處理系統之 室、具有η個處理亥平半臺導之體處製程處理系統包括真空鎖、傳送 件交換平臺,苴…處理腔室’處理腔室内設置有工 位置之至小雨/ #送室具有指向同-方向並且位於上下 至夕兩個傳送臂的傳送裝置 之情況下裝截工彼以, 主門丄仟 送臂自真空鎖中^步驟如下··⑴傳送裝置利用其兩個傳 理腔室之裝卸口 I,件;Ο)將兩個傳送臂旋轉至處 再中第一傳送臂正對裝卸口,將該第 141659.doc 200949899 一傳送臂所持之工件放在工件交換平臺上,卫件交 二分之-圈;(3)傳送裝置之第二傳送臂調整至正: 卸口處’將該第二傳送臂所持之卫件放在工件交換平ί 臺旋轉η分之一圈;(5)重複片工件’工件交換平 處理㈣* 複上述㈣(2)、(3)、⑷,直至 其令,處理平臺之絲„為自職。處理腔 兩個或三偏。真空鎖設有上下兩層結構,其中:為 層用於工件之傳送及交換 為父換 m Μ玄〜 卜層則叹有易於散熱之墊片 用以政熱。真空鎖内容納兩片或四片^ 在步驟(5)完成後且等待 步包括工件交換步驟,:二 後,亦進- 返回真dr交換步驟包括、.傳送裝置 返口真二鎖,並自真空鎖中用第一傳送臂取 的工件,· b.旋轉傳送裝置 1 篦-值、关辟 使其返回處理腔室位置,並使 傳:=;:處理腔室之裝卸口處;,裝置用第1 傳送臂藉由裝㈠臺取出弟 件;d_調整傳送裝 冑理後之工 送裝置用帛使第傳送臂正對裝卸口,傳 裝置用弟一傳送臂藉由裝卸口向工件交換平臺放入一H 未處理的工件;e.傳送裝置之第二 將第二傳送臂取得之處理後的工件放入真空鎖真工鎖,並 工件交換平臺設有_傳㈣,^ 鎖植 轉使得每對傳送臂與一處理平臺相對應。平臺可旋 一種半導體製程處理系統之 程處理系統包括真空鎖、傳^ #載方法’該半導體製 、至、具有η個處理平臺之處 14l659.doc 200949899 理腔室’處理腔室内設置有工件交換平臺, 有指向同一方向並且位於 、送至具 送裝置,在處理腔室為滿二=個傳送臂的傳 -“件;⑺工件臺旋轉自工件交換平臺取出 送臂位置使其正董… 之一圈,調整第二傳 ::使其正對裝卸口 ’· (3)傳送裝置用第二傳送臂藉由 傳送工件交換平臺取出一片工件;(4)傳送裝置之第_ 參 傳送臂返回真空鎖並將取得之兩片工件放 2 複上述步驟,直至處理腔室卸載完畢。 冑,⑺重 兩平臺之個數…自然數。處理腔室之數目為 ^下兩層結構’其中上層為交換 用以散Γ牛之傳运及父換’而下層則設有易於散熱之塾片 2政熱。工件交換平臺設有_傳送臂,其中工件交換 千臺可旋轉使得每對傳送臂與—處理平臺相對應。 一種半導體製程處理系統之工件交換方法,該半導 程處理系統包括真空鎖、傳送室、具有n個處理平臺之 理腔室’處理腔室内設置有工件交換平臺 =向同-方向並且位於上下位置之至少兩個傳:::: 送裝置’在處理腔室有工件之情況下交換工件的步驟如 下.⑴傳送裝置返回真空鎖,並自真空鎖中用第一傳送臂 取^一片未處理之工件;⑺旋轉傳送裝置,使其返回處理 腔至位置’並使第二傳送臂正對處理腔室之裝卸口處;(3) 傳送裝置用第二傳送臂藉由裝卸σ自卫件交換平臺取出一 片處理後之工件;(4)調整傳送裝置位置,使第—傳送臂正 141659.doc -11 - 200949899 對裝卸口, 平臺放入一 回真空鎖, 鎖0 傳送裝置用第一傳送臂藉由裝卸口向工件交換 片未處理的工件,’(5)傳送裝置之第二傳送臂返 並將第二傳送臂取得之處理後的工件放入真空 其中,處理平臺之個數n為4自然數。處理腔室之數目為 兩個或三個。真空鎖設有上下兩層結構1中上層為交換 層用於工件之傳送及交換,而下層則設有易於散熱之塾片 用以散熱。真空鎖内交細I + μ >、 兴二頻円今納兩片或四片工件。工件交換平臺 設有η對傳送臂,其中工彼六认τ ± ' 再〒件交換平臺可旋轉使得每對傳送 臂與一處理平臺相對應。 本發明採㈣特的傳送裝置工件傳送結構,可更加迅速 地裝卸工件,提高產能。本發明之處理腔室採用特殊設計 的進排氣系統’使得各處理平臺之間形成反應氣體幕障, 可提昇各平臺之間的均—度,避免了不同處理平臺之間的 反應氣體交互干擾。 【實施方式】 請參看圖1,圖!為本發明半導體製程處理系統之立體結 構示意圖本發明由一標準的工廠介面1、兩個真空鎖2、 -傳送室3、-或多個處理腔室4構成。其中,工廠介面i 與真空鎖2相鄰。傳送室3位於真空鎖2與處理腔室*之間。 多個處理腔室4可圍繞傳送室3設置。每一處理腔室4中包 含有多個處理平臺5,每一處理平臺5可處理一片半導體工 件。在如圖1所示之實施例中,半導體製程處理系統包括 兩個處理腔室4,兩個處理腔室4圍繞傳送室3設置。每一 141659.doc •12· 200949899 處理腔室4上方均設置有一腔室頂蓋8,為便於本發明之說 明,其中一處理腔室4之腔室頂蓋8處於閉合狀態,另一腔 室頂蓋8處於打開狀態。自閉合狀態之腔室頂蓋8上可看 到,處理腔室4之腔室頂蓋8上設有一反應氣體供應裝置 6,4反應氣體供應裝置6可藉由進氣管自腔室頂蓋8之頂 部向處理腔室4内不同之處理平臺5輸人反應氣體。自打開 之腔至頂蓋8中可看到,腔室頂蓋8内部具有一凹陷部9, 凹卩9四周各有一延伸部1〇。在凹陷部9中具有與處理平 里1之個數相同的多個凸起之噴淋頭丨丨,喷淋頭丨丨上設有 若干均勻密佈之細孔12以供反應氣體供應裝置6提供的反 應氣體輸人處理平臺5内。另外,在處理腔室4之支架側邊 亦設有進行工件處理所需之控制、排氣以及動力裝置7, 為簡潔起見,此處不詳述。本發明每一處理腔室4可共用 一套清潔源及反應氣體提供裝置、排氣泵及終端探測器。 在電漿化學氣相沉積之情況下,同-處理腔室4之處理平 參 臺5之間亦可共用一套射頻能量輸入裝置。 請參看圖2,圖2為本發明半導體製程處理系統在省略處 理腔室頂蓋時之俯視圖。圖2中之實施例中,傳送室3為五 邊形的,可在其周圍最多設置三個處理腔室4,圖2之實施 例中設置了兩個,當然亦可只有一處理腔室4。在其他某 些實施例中,傳送室3亦可為其他不同形狀,例如六邊 形。相應的,傳送室3周圍最多可設置之處理腔室4的數目 亦可不同。如圖2所示之實施例中處理腔室4是具有帶有四 個倒角之四邊形,其内部設置有四個處理平臺5。當然在 141659.doc •13- 200949899 其他的某些實施例中,處理腔室4亦可擁有其他不同的形 狀以及不同數目的處理平臺5。 請參看圖3,圖3為本發明半導體製程處理系統中之處理 腔室的結構分解示意圖。在圖3中,處理腔室包括腔室頂 蓋8、抽氣隔離板13、工件交換平臺乃、加熱基座19以及 腔室基盤18。其中,加熱基座19藉由其中心軸叫裝在腔 室基盤18之軸孔31'中,抽氣隔離板13、工件交換平臺25及 腔室基盤18沿如圖所示之共同的轴心線上下安裝在一起, 腔室頂蓋8與腔室基盤18機械連接在一起並且可打開或閉 合。當腔室頂蓋8蓋在腔室基盤18上時,腔室頂蓋8及腔室 基盤18内部形成一密閉的工件處理腔室。需要說明,本發 明中之處理腔室内部可設置有多個工件處理平臺,為便於 說明,在圖3所示之實施例中,僅以四個工件處理平臺為 例。 腔室頂蓋8向内凹陷,形成一凹陷部9,該凹陷部9四周 有延伸之突起狀的延伸部〗當處理半導體工件時,腔室 頂蓋8與腔室頂蓋合上,内部形成一密閉反應腔體,反應 氣體會在凹陷部9内流動,並最終排出處理腔室(容後詳 述)。腔室頂蓋8之凹陷部9内設置有四個自凹陷部9凸起之 .噴淋頭11,噴淋頭U上均勻分佈著供反應氣體輸入之細孔 12。 抽氣隔離板13上設置有與喷淋頭u之個數及位置相對應 的若千抽氣隔離孔16。抽氣隔離孔16之孔徑上寬下窄對 應地,腔室頂蓋8上之噴淋頭u直徑小於該抽氣隔離孔“ 141659.doc -14· 200949899 之上端直徑’大於該減_孔16之下端直徑,此種設置 使得當腔室頂蓋8蓋在腔室基盤18時,喷淋頭Μ抽氣隔 離孔16有較緊密之接觸。另冰 ,^ _ m另外,抽虱隔離板13周圍亦設置Another object of the present invention is to provide a semiconductor process processing system which solves the problem that the current workpiece mass production apparatus is not uniform in processing and can not perform batch processing of workpieces with high quality. The present invention achieves the above object by the following technical method: a semiconductor processing chamber comprising a plurality of processing platforms, the processing platform is provided with a radial groove for exhausting, and an exhaust passage is arranged around the processing chamber, and the processing chamber is provided. The exhaust passage of the chamber and the radial groove of the processing platform are connected to each other to constitute an exhaust system. 0 141659.doc 200949899 wherein the processing chamber includes a chamber top cover and a chamber base plate, and the suction isolation plate is disposed in the cavity Between the top cover of the chamber and the base plate of the chamber, wherein the top cover of the chamber has a plurality of raised shower heads, and the suction separating plate has a plurality of suction isolation holes corresponding to the shower head, below the suction isolation plate The chamber base has a heating base corresponding to each of the suction isolation holes, and the corresponding shower head, the suction isolation hole and the heating base form a processing platform. A plurality of radial grooves are provided around the suction isolation panel. The radial groove is distributed near the side of the periphery of the suction partition m near the center of the suction isolation plate. A plurality of exhaust ports corresponding to the extension of the recess of the chamber cover are also disposed around the suction partition. ~ At least one exhaust groove for exhausting is provided on the chamber base, and the exhaust groove is connected to the exhaust port of the suction partition. The bottom of the chamber base is provided with an exhaust passage communicating with the exhaust passage, and the exhaust passage is connected to the exhaust device. The air curtain forming process formed by the airflow discharged around the processing platform is: gas is sent to each processing platform by the sprinkler of the present invention, and the gas is extracted from each processing platform due to the air pressure of the intake system and the extraction of the gas by the exhaust device. The radial flow out of the tank, due to the action of air pressure, the flow rate of the gas can be very fast, forming a gas curtain around the treatment platform. An inert gas curtain is sprayed around the heating base. Another technical solution I·· a semiconductor processing chamber, & includes a plurality of processing platforms ′′ also includes a pumping insulation panel disposed on the processing platform, the pumping insulation panel having a plurality of processing platforms corresponding to the processing platform The suction isolation holes are used to isolate the reaction environments of the processing platforms from each other during the semiconductor processing process by pumping the isolation holes. 141659.doc 200949899 wherein the semiconductor processing chamber also includes a chamber top cover and a chamber base, the processing platform is disposed in the chamber base, and the suction isolation plate is disposed between the chamber top cover and the chamber base. The chamber top cover has a plurality of raised showerheads with fine holes. The suction isolation hole on the suction isolation plate corresponds to the shower head, and during the processing of the + conductor workpiece, the shower head abuts against the suction isolation hole of the suction isolation plate. A heating base corresponding to each of the suction isolation holes is formed in the chamber base below the suction isolation plate, and the corresponding shower head, the suction isolation hole and the heating base form a processing platform. The periphery of the suction isolation hole is provided with a plurality of radial grooves. The distribution of the radial grooves is close to the periphery of the suction insulation plate! It is thinner than the side of the center of the suction isolation plate. A plurality of air ports corresponding to the extensions of the recesses of the chamber top cover are also disposed around the air separation panel. A plurality of symmetrical exhaust ports are arranged around the suction isolation plate. At least a venting groove for exhausting is provided around the chamber to the base plate adjacent to the suction partition. The bottom of the chamber base is provided with an exhaust passage communicating with the exhaust passage, and the exhaust passage is connected to the exhaust device. The flow direction from the inner cavity to the middle oxygen flow is: the reaction gas is sent from the nozzle to each processing platform, and the semiconductor workpiece placed on the heating base is processed by: the air pressure of the intake system and the exhaust device pair The reaction gas is extracted, and the reaction gas flows out from the radial groove of the suction isolation plate of each processing platform, into the recessed portion of the top cover of the chamber and flows to the extension portion of the depressed portion, and is surrounded by the pumping isolation plate The exhaust port flows into the exhaust groove of the chamber base, and then enters the exhaust device through an exhaust passage communicating with the exhaust groove. The chamber base is provided with a loading and unloading port for loading and unloading the workpiece on the side of the transfer chamber. The bottom of the heated base is filled with an inert gas to prevent particulate dust from falling under the heated base. 141659.doc 200949899 Square deposition and film growth. Still another object of the present invention is to provide a processing system which solves the problems of slow loading and unloading of workpieces in a workpiece mass production apparatus and low processing efficiency of workpieces. The present invention achieves the above object by the following technical method: a method for transferring a workpiece of a semiconductor process processing system, the semiconductor process processing system comprising a transfer chamber and a processing chamber, the transfer chamber being provided with a transfer device having at least two a transfer arm located at an upper and lower position and capable of telescopically extending 9 in a horizontal direction, the method comprising: (1) one of the transfer devices transporting the arm from a workpiece loading and unloading port in the processing chamber for one month, and (2) following step (1): Another transfer arm of the delivery device places another piece of workpiece into the processing chamber through the workpiece loading and unloading port. =, the conveyor can be rotated on a horizontal plane within the transfer chamber. The transfer is set by the movement of the workpiece each time. Conveying equipment = system: also includes vacuum lock, the transfer device can take ffi two months workpiece in the vacuum lock. The engineering scheme is: a chamber of a semiconductor process processing system, a process processing system having n processing chambers, including a vacuum lock, a transfer part exchange platform, a processing chamber, and a processing position in the processing chamber. Until the light rain / #送室 has a conveyor that points in the same direction and is located between the top and bottom of the two transfer arms, the main door is sent from the vacuum lock. The steps are as follows: (1) The device utilizes the loading and unloading ports I of the two processing chambers, and the two transfer arms are rotated to the position where the first transfer arm is facing the loading and unloading port, and the workpiece held by the transfer arm is the 141659.doc 200949899 Placed on the workpiece exchange platform, the guards pay a two-point circle; (3) the second transfer arm of the conveyor is adjusted to the positive: at the unloading port 'place the guards held by the second transfer arm on the workpiece exchange plane Rotate η minute turn; (5) Repeat piece workpiece 'work piece exchange flat process (4)* Repeat the above (4) (2), (3), (4) until it is ordered, the processing platform wire „ is self-employed. Or triple bias. The vacuum lock is provided with two layers of upper and lower layers, among which: For the transfer and exchange of the workpiece for the father to change m Μ 玄 ~ 卜 layer sighs the easy to dissipate the gasket for political heat. The vacuum lock contains two or four pieces ^ after the completion of step (5) and the waiting step includes Workpiece exchange step, after: second, also forward-return true dr exchange step includes, the transfer device returns the true second lock, and the workpiece taken from the vacuum lock with the first transfer arm, · b. rotary transfer device 1 篦- The value is turned off to return to the processing chamber position, and the transmission: =;: the loading and unloading port of the processing chamber; the device uses the first transfer arm to take out the device by the (1) table; d_ adjust the transfer device The second working device is used to make the transfer arm face the loading and unloading port, and the transfer device uses the transfer arm to insert an H unprocessed workpiece into the workpiece exchange platform through the loading and unloading port; e. The second of the transfer device is second The workpiece obtained by the transfer arm is placed in a vacuum lock real lock, and the workpiece exchange platform is provided with _transmission (four), and the lock is transferred so that each pair of transfer arms corresponds to a processing platform. The platform can rotate a semiconductor process processing system. Process processing system including vacuum lock, transfer method System, to, with n processing platforms 14l659.doc 200949899 The processing chamber is equipped with a workpiece exchange platform, which is located in the same direction and is located in the delivery device, and the processing chamber is full two = one Transfer arm transmission - "piece; (7) workpiece table rotation from the workpiece exchange platform to take out the arm position to make it Dong Dong... One circle, adjust the second pass:: make it facing the loading and unloading port' (3) The two transfer arms take a piece of the workpiece by transferring the workpiece exchange platform; (4) the first transfer arm of the transfer device returns the vacuum lock and the two pieces of the obtained workpiece are placed in the above steps until the process chamber is unloaded.胄, (7) Heavy The number of two platforms... natural number. The number of processing chambers is ^lower two-layer structure' where the upper layer is exchanged for the transport of the yak and the father's and the lower layer is provided with the heat-dissipating plaque. The workpiece exchange platform is provided with a transfer arm in which thousands of workpiece exchanges are rotatable such that each pair of transfer arms corresponds to a processing platform. A workpiece exchange method for a semiconductor process processing system, the semi-duct processing system comprising a vacuum lock, a transfer chamber, and a processing chamber having n processing platforms. The processing chamber is provided with a workpiece exchange platform = the same direction and the upper and lower positions At least two passes:::: The sending device 'The steps of exchanging the workpiece in the case where the processing chamber has a workpiece are as follows. (1) The transfer device returns to the vacuum lock, and the first transfer arm is taken from the vacuum lock to take an unprocessed a workpiece; (7) rotating the transfer device to return it to the processing chamber to the position 'and the second transfer arm is facing the loading and unloading port of the processing chamber; (3) the transfer device is removed by the loading and unloading σ self-defense member exchange platform a piece of processed workpiece; (4) adjust the position of the conveyor so that the first transfer arm is 141659.doc -11 - 200949899 to the loading and unloading port, the platform is placed in a vacuum lock, and the lock 0 is transported by the first transfer arm The loading and unloading port exchanges the unprocessed workpiece to the workpiece, '(5) the second transfer arm of the transfer device returns and the processed workpiece obtained by the second transfer arm is placed in a vacuum, and the processing platform is The number n is a natural number of 4. The number of processing chambers is two or three. The vacuum lock is provided with an upper and lower two-layer structure. The upper layer is an exchange layer for the transfer and exchange of workpieces, and the lower layer is provided with a heat-dissipating fin for heat dissipation. Vacuum lock inside the fine I + μ >, Xing two-frequency 円 円 two or four pieces of workpiece. The workpiece exchange platform is provided with a pair of transfer arms, wherein the workpiece exchange circuit is rotatable such that each pair of transfer arms corresponds to a processing platform. The invention adopts the special transfer device workpiece transfer structure of (4), which can load and unload the workpiece more quickly and improve the production capacity. The processing chamber of the invention adopts a specially designed intake and exhaust system' to form a reaction gas curtain between the processing platforms, which can improve the uniformity between the platforms, and avoid the reaction gas interaction between different processing platforms. . [Embodiment] Please refer to Figure 1, Figure! BRIEF DESCRIPTION OF THE DRAWINGS The present invention consists of a standard factory interface 1, two vacuum locks 2, a transfer chamber 3, or a plurality of processing chambers 4. Among them, the factory interface i is adjacent to the vacuum lock 2. The transfer chamber 3 is located between the vacuum lock 2 and the processing chamber*. A plurality of processing chambers 4 can be disposed around the transfer chamber 3. Each processing chamber 4 contains a plurality of processing platforms 5, each of which can process a single semiconductor workpiece. In the embodiment shown in Fig. 1, the semiconductor process processing system includes two processing chambers 4, and two processing chambers 4 are disposed around the transfer chamber 3. Each of the 141659.doc • 12· 200949899 is provided with a chamber top cover 8 above the processing chamber 4. For the convenience of the description of the present invention, the chamber top cover 8 of one processing chamber 4 is in a closed state, and the other chamber is in a closed state. The top cover 8 is in an open state. It can be seen from the chamber top cover 8 of the self-closing state that a reaction gas supply device 6 is disposed on the chamber top cover 8 of the processing chamber 4, and the reaction gas supply device 6 can be closed from the chamber by the intake pipe. The top of 8 inputs a reactive gas to a different processing platform 5 within the processing chamber 4. As can be seen from the open cavity to the top cover 8, the interior of the chamber top cover 8 has a recess 9 around which each of the recesses 9 has an extension 1〇. In the recessed portion 9, there are a plurality of raised shower heads of the same number as the processing flats 1, and the shower heads are provided with a plurality of uniformly dense pores 12 for the reaction gas supply device 6 to provide. The reaction gas is input into the processing platform 5 . Further, control, exhaust, and power means 7 for performing workpiece processing are also provided on the side of the holder of the processing chamber 4, which will not be described in detail herein for the sake of brevity. Each of the processing chambers 4 of the present invention can share a set of cleaning source and reactive gas supply means, exhaust pump and terminal detector. In the case of plasma chemical vapor deposition, a set of RF energy input devices can also be shared between the processing platform 5 of the same-processing chamber 4. Referring to FIG. 2, FIG. 2 is a top plan view of the semiconductor processing system of the present invention with the processing of the top cover of the chamber omitted. In the embodiment of Fig. 2, the transfer chamber 3 is pentagonal, and up to three processing chambers 4 can be disposed around it. In the embodiment of Fig. 2, two are provided, and of course, only one processing chamber 4 is provided. . In some other embodiments, the transfer chamber 3 can also have other different shapes, such as a hexagon. Accordingly, the maximum number of processing chambers 4 that can be disposed around the transfer chamber 3 can also be different. In the embodiment shown in Fig. 2, the processing chamber 4 has a quadrilateral shape with four chamfers, and four processing platforms 5 are disposed inside. Of course, in some other embodiments, 141659.doc • 13- 200949899, the processing chamber 4 can also have other different shapes and a different number of processing platforms 5. Please refer to FIG. 3. FIG. 3 is a schematic exploded view of the processing chamber in the semiconductor process processing system of the present invention. In Fig. 3, the processing chamber includes a chamber top cover 8, a suction isolation panel 13, a workpiece exchange platform, a heating base 19, and a chamber base 18. Wherein, the heating base 19 is mounted in the shaft hole 31' of the chamber base 18 by its central axis, and the suction separating plate 13, the workpiece exchange platform 25 and the chamber base plate 18 are along the common axis as shown. Mounted together under the line, the chamber top cover 8 is mechanically coupled to the chamber base 18 and can be opened or closed. When the chamber top cover 8 is placed over the chamber base 18, a closed workpiece processing chamber is formed within the chamber top cover 8 and the chamber base 18. It should be noted that a plurality of workpiece processing platforms may be disposed inside the processing chamber in the present invention. For the convenience of description, in the embodiment shown in FIG. 3, only four workpiece processing platforms are taken as an example. The chamber top cover 8 is recessed inwardly to form a recessed portion 9 having an extended protrusion-like extension around the recessed portion 9. When the semiconductor workpiece is processed, the chamber top cover 8 is closed with the chamber top cover, and the inside is formed. In a closed reaction chamber, the reaction gas flows in the recess 9 and eventually exits the processing chamber (described in detail later). The recessed portion 9 of the chamber top cover 8 is provided with four protrusions from the recessed portion 9. The shower head 11 has a fine hole 12 for the input of the reaction gas uniformly distributed on the shower head U. The suction isolation panel 13 is provided with a plurality of evacuation isolation holes 16 corresponding to the number and position of the shower heads u. Correspondingly, the diameter of the suction isolation hole 16 is wider and narrower, and the diameter of the shower head u on the chamber top cover 8 is smaller than the diameter of the suction isolation hole "141659.doc -14· 200949899 upper end diameter" is larger than the reduction hole 16 The lower end diameter is such that when the chamber top cover 8 is placed over the chamber base 18, the sprinkler head venting isolation hole 16 has a closer contact. Another ice, ^ _ m, the twitch isolation plate 13 Also set around

有四個與腔室頂蓋8之凹陷邱qm A 陷。卩9的延伸部10相連通之排氣口 14。There are four recessed qm A traps with the chamber top cover 8. The exhaust port 14 of the extension portion 10 of the crucible 9 communicates with each other.

工件交換平臺25用於在各處理平臺5之間傳送工件,其 -有轉軸孔33及沿轉軸孔3 3周邊均勻設置的與工件平臺 數目相對應對數之可開合的傳送臂37,每—對傳送臂^上 用於置放工件。工件交換平臺25可旋轉,並可使每一對傳 送臂37正好位於—處理平臺5之上方。本實施例中,抽氣 隔離板排氣口工件交換平臺25具有 四對可開合之傳送臂37 與抽氣隔離板13之抽氣隔離孔16相對應。 加熱基座19具有一呈圓形之加熱平臺,加熱平臺下面之 中〜位置處有-支撐桿3 ! ’可在腔室基盤i 8中沿轴孔3 i,上 下升降。加熱平臺上置放用於處理之工件。為配合工件交 換平臺25在加熱基座19上取放工件,加熱基座19上亦設有 夕個可沿腔室基盤丨8之轴孔2〇’上下移動的頂針2〇。頂針2〇 的個數及排列方式可有多種,在如圖3該之實施例中,每 一加熱基座19上具有三個呈三角形分佈之頂針2〇。 結合參看圖3及圖4,腔室基盤18中間設有一與工件交換 平臺25之轉軸孔33共軸心的轴孔33,,工件交換平臺25藉由 一轉動機構(未圖示)安裝在腔室基盤18中之轴孔33,上。腔 至基盤18内設置有4個工件處理平臺5,每一工件處理平臺 裏面設置一軸孔31'及三個轴孔20,,加熱基座19之支撐桿 141659.doc -15- 200949899 31可在軸孔,内上下升降,頂針2〇可在軸孔別•内上下升 降。腔室基盤18正對一工件處理平臺5之一側f史置有一供 工件進出的工件裝卸口 23。腔室基盤18上在工件裝卸口23 相對兩側各設置有一用於排氣之排氣槽17。腔室基盤以底 部亦設置有與排氣通道21相連通之排氣裝置22。請再結合 參看圖7,圖7為圖4中所示之腔室基盤“沿^線剖開之剖 視圖。由圖7可知,排氣槽17及排氣通道21之間藉由一連The workpiece exchange platform 25 is configured to transfer the workpiece between the processing platforms 5, and has a rotating shaft hole 33 and a transfer arm 37 which is uniformly disposed along the periphery of the rotating shaft hole 33 and which is opposite to the number of workpiece platforms. The transfer arm is used to place the workpiece. The workpiece exchange platform 25 is rotatable and each pair of transfer arms 37 can be positioned just above the processing platform 5. In the present embodiment, the suction separation plate exhaust port workpiece exchange platform 25 has four pairs of openable transfer arms 37 corresponding to the suction isolation holes 16 of the suction insulation plate 13. The heating base 19 has a circular heating platform, and a support bar 3! in the middle to the lower position of the heating platform can be raised and lowered along the shaft hole 3 i in the chamber base i 8 . A workpiece for processing is placed on the heating platform. In order to cooperate with the workpiece exchange platform 25 to pick up and place the workpiece on the heating base 19, the heating base 19 is also provided with a thimble 2 可 which is movable up and down along the shaft hole 2' of the chamber base 丨8. There may be a plurality of ejector pins 2 arranging and arranging. In the embodiment shown in Fig. 3, each of the heating bases 19 has three thimbles 2 which are distributed in a triangular shape. Referring to Figures 3 and 4, a shaft hole 33 coaxial with the shaft hole 33 of the workpiece exchange platform 25 is disposed in the middle of the chamber base plate 18. The workpiece exchange platform 25 is mounted in the chamber by a rotating mechanism (not shown). A shaft hole 33 in the chamber base 18, on. There are four workpiece processing platforms 5 disposed in the cavity to the substrate 18. Each of the workpiece processing platforms is provided with a shaft hole 31' and three shaft holes 20, and the support rod 141659.doc -15-200949899 31 of the heating base 19 can be The shaft hole is lifted up and down, and the ejector pin 2 can be raised and lowered in the shaft hole. The chamber base 18 faces a side of a workpiece processing platform 5 with a workpiece loading and unloading port 23 for the workpiece to enter and exit. An exhaust groove 17 for exhausting is provided on the chamber base 18 on opposite sides of the workpiece loading and unloading port 23. The chamber base is also provided with an exhaust device 22 in communication with the exhaust passage 21 at the bottom. Please refer to FIG. 7 again. FIG. 7 is a cross-sectional view of the chamber substrate shown in FIG. 4 taken along the line. As can be seen from FIG. 7, the exhaust groove 17 and the exhaust passage 21 are connected by one.

接槽27使二者連通在一起。因此,排氣槽口、排氣通道2ι 及排氣裝置22相互連通。 圖6為本發明之抽氣隔離板13的結構示意圖,如圖6所 不,抽氣隔離板13之抽氣隔離孔16的周邊設有若干放射狀 的槽24,抽氣隔離板13周圍亦設置有與腔室頂蓋8之凹陷 部9的延伸部1〇相連通之多個排氣口 14。The slots 27 connect the two together. Therefore, the exhaust slot, the exhaust passage 2, and the exhaust device 22 communicate with each other. 6 is a schematic structural view of the air separation panel 13 of the present invention. As shown in FIG. 6, the air separation barrier 16 of the air separation panel 13 is provided with a plurality of radial slots 24, and the air separation panel 13 is also surrounded. A plurality of exhaust ports 14 are provided in communication with the extensions 1 of the recesses 9 of the chamber top cover 8.

請結合參看圖3,在工件處理時,腔室頂蓋8蓋在腔室基 盤18上形成一處理腔,在處理腔内,抽氣隔離板13置放在 腔至基盤18上,並且抽氣隔離板13之每一抽氣隔離孔Μ恰 好位於加熱基座19之上方,腔室頂蓋8之喷淋頭丨丨與抽氣 隔離板13的抽氣隔離孔16緊靠,加熱基座19與抽氣隔離板 U緊罪,被處理之工件放在加熱基座19與抽氣隔離板η之 間,工件交換平臺25之傳送臂37可藉由各種方式之設置使 傳送臂37位於不阻播加熱基座ip之位置,從而不影響自噴 淋頭π上喷出之反應氣體直接喷射到位於加熱基座19上的 工件上。由此,噴淋頭U、抽氣隔離板13及加熱基座19形 成一處理平臺5。反應氣體供應裝置6自腔室頂蓋8之頂部 141659.doc •16· 200949899 ❹ 藉由喷淋頭11上的細孔12給處理平臺5輸入反應氣體,反 應氣體自喷淋頭11上喷出來,對置放在加熱基座丨9上之半 導體工件進行處理’由於抽氣隔離板13上設置有放射狀槽 24’使得腔室頂蓋8上之喷淋頭丨〗與抽氣隔離板13不能完 全密閉’自喷淋頭11上之密佈的細孔12上進入處理平臺5 之反應氣體在處理過工件後,經過由此等放射狀槽24構成 之抽氣隔離板孔隙漏出,進入腔室頂蓋8向内凹陷之凹陷 9,並向凹陷部9之延伸部1 〇流動,由於延伸部1 〇與抽氣 隔離板13之多個排氣口 14相連通,再由於排氣裝置22之作 用’漏出的氣體自動流至抽氣隔離板13上之多個排氣口 14 處,因為多個排氣口 14與設置在腔室基盤18上之排氣槽17 相連通,且由於排氣槽17及排氣通道21相連通,氣體就由 此通路進入了排氣通道21,最終被排氣裝置22抽出,形成 π正的進軋排氣系統。由於反應氣體供應裝置6之氣壓 以及排氣裝置22對反應氣體之抽取,整個進氣排氣系統之 反應氣體的流速可很快,在處理平臺5周圍形成氣幕,使 得各個平臺之間之反應氣體不至於互相干擾。 進一步地,考量到處理腔室4内部氣壓大小之不同而對 反應氣體之流速產生的影響,本發明將放射狀槽Μ之分佈 設置為靠近抽氣隔離板13周邊之一侧較靠近抽氣隔二3 中心轴孔35的-側疏。如此對於每一放射狀槽2钟流出之 反應氣體流到排氣裝置22的難易程度係一 2 亦更加均勻。 η因而錢 由於處理腔室4内之處理平臺5係對稱設置的,每一處理 141659.doc •17. 200949899 平臺5排出之反應氣體所受到之阻礙係一致的。本發明藉 由靠近抽氣隔離板13周圍設置在腔室基盤18上之排氣槽17 使得排出之氣體被均勻、迅速地被抽出’保證了多片工件 之間的處理均一性。而且本發明採用了噴淋頭丨丨與抽氣隔 離板13之間的由放射狀槽14構成之孔隙來作為處理平臺5 之排氣口,使得處理平臺5中之氣流更為均勻,而且排出 之氣體形成氣幕,在腔室内部開放之條件下形成氣幕隔 離,使得各處理平臺之處理環境相對獨立。此外亦可在加Referring to FIG. 3, in the processing of the workpiece, the chamber cover 8 covers a processing chamber on the chamber base 18, and in the processing chamber, the air separation panel 13 is placed on the chamber to the base 18, and the air is pumped. Each of the suction isolation holes of the insulation plate 13 is located just above the heating base 19, and the shower head 腔 of the chamber top cover 8 abuts against the suction isolation hole 16 of the air separation plate 13, and the heating base 19 is heated. In contrast to the suction isolation plate U, the workpiece to be processed is placed between the heating base 19 and the suction isolation plate η, and the transfer arm 37 of the workpiece exchange platform 25 can be placed in various ways to prevent the transfer arm 37 from being placed. The position of the susceptor ip is heated so as not to affect the direct injection of the reaction gas ejected from the shower head π onto the workpiece on the heating base 19. Thus, the shower head U, the suction partitioning plate 13, and the heating base 19 form a processing platform 5. The reaction gas supply device 6 is from the top of the chamber top cover 141659.doc •16· 200949899 输入 The reaction gas is supplied to the processing platform 5 through the fine holes 12 in the shower head 11, and the reaction gas is ejected from the shower head 11. The semiconductor workpiece placed on the heating base 丨9 is processed. 'Because the venting spacer 13 is provided with a radial groove 24', the shower head 腔 and the venting spacer 13 on the chamber top cover 8 are provided. The reaction gas that has entered the processing platform 5 from the fine pores 12 on the sprinkler 11 can not be completely sealed. After the workpiece is processed, the pores of the suction separator formed by the radial grooves 24 are leaked out and enter the chamber. The top cover 8 is recessed inwardly by the recess 9 and flows toward the extension 1 of the recessed portion 9, since the extension portion 1 is in communication with the plurality of exhaust ports 14 of the air separation panel 13, and further by the exhaust device 22 The function "leakage gas" automatically flows to the plurality of exhaust ports 14 on the suction partitioning plate 13, because the plurality of exhaust ports 14 communicate with the exhaust slots 17 provided on the chamber base 18, and due to the exhaust The tank 17 and the exhaust passage 21 are in communication, and the gas enters the exhaust passage through the passage The passage 21 is finally withdrawn by the exhaust unit 22 to form a π positive inlet and outlet exhaust system. Due to the gas pressure of the reaction gas supply device 6 and the extraction of the reaction gas by the exhaust device 22, the flow rate of the reaction gas of the entire intake and exhaust system can be fast, forming a gas curtain around the treatment platform 5, so that the reaction between the various platforms The gases do not interfere with each other. Further, considering the influence of the difference in the magnitude of the internal pressure of the processing chamber 4 on the flow velocity of the reaction gas, the present invention sets the distribution of the radial groove to be close to the suction side of one side of the suction isolation plate 13 The two sides of the center shaft hole 35 are sparse. Thus, the ease with which the reaction gas flowing out of each of the radial slots for 2 hours flows to the exhaust unit 22 is more uniform. η and thus money Since the processing platform 5 in the processing chamber 4 is symmetrically arranged, each process 141659.doc • 17. 200949899 The reaction gases discharged from the platform 5 are consistently obstructed. The present invention ensures that the discharged gas is uniformly and rapidly extracted by the exhaust groove 17 provided around the suction partitioning plate 13 on the chamber base plate 18 to ensure uniformity of processing between the plurality of workpieces. Moreover, the present invention adopts the aperture formed by the radial groove 14 between the shower head 丨丨 and the suction separating plate 13 as the exhaust port of the processing platform 5, so that the airflow in the processing platform 5 is more uniform and discharged. The gas forms a gas curtain, and the air curtain isolation is formed under the condition that the chamber is open, so that the processing environment of each processing platform is relatively independent. Also in addition

熱基座19周目設有向上噴射之惰性反應氣體氣幕進一步 防止反應氣體自加熱基座19與抽氣隔離板13之間的縫隙茂 漏或進人。藉由此等措施’可有效地避免處理平臺5之間 反應氣體之相互干擾。The hot base 19 is provided with an inert reaction gas curtain which is sprayed upward to further prevent the reaction gas from leaking or entering from the gap between the heating base 19 and the suction partitioning plate 13. By such measures, the mutual interference of the reaction gases between the processing platforms 5 can be effectively avoided.

言月/看圖2 ’圖2為本發明半導體製程處理系統在省略 理腔室頂蓋時之俯視圖。工件由工件£經流水線送至本 明之半導體製程處理系統,4介面i自卫件g中取出 件置放到真空鎖2中。傳送室3中設有一傳送裝置Μ,該 $裝置具有至少兩個可分別伸縮之傳送臂(容後詳述) 示之實施射,傳送裝置15係-具有兩個傳送 雙臂機器人’當然亦可係包括兩個 人。該傳送裝置15將工件自真%……之機 腔室4中之處理平臺5内。在自—真處取出’置放到處: 内署访― 處理腔至4之所有處理平臺 完以後元Π時,該處理腔室4就可進行工件處理… :…#由傳送室3中之傳送裝置】 件,同時在原位放入未處理之工件再推,_ 仵再進行下一批次之肩 141659.doc -18- 200949899 理。取出之工件放入真空鎖2中冷卻。冷卻完後再經由工 廠介面1將其置放到流水線上之工件匣中送入下一製程步 驟進行處理。 請參看圖8,圖8為本發明之真空鎖2及傳送室3之結構示 意圖。本發明具有兩個真空鎖2,真空鎖2位於五邊形傳送 室3靠近工廠介面1之兩個相鄰邊。其中每一真空鎖2被分 隔成四個槽,每一槽中可容納一片工件。真空鎖2及其每 一槽可被抽成真空。工腐1介面1可一次或多次地將真空鎖2 眷 中之四個槽内的工件裝上或取走。在另外某些實施例中真 空鎖2可被分割成交換層及冷卻層,前者用於工件在真空 鎖2及處理腔室4之間的轉送,而後者則用於冷卻處理完之 工件’並將其送至非真空環境中以供工廠介面1取走。 如圖8中之傳送室3是一五邊形的真空腔室。在傳送室3 内具有一傳送裝置15,傳送裝置15之兩個傳送臂可在水平 面上同步旋轉或獨立旋轉各自角度(比如,兩個傳送臂可 ❿ 旋轉成相互呈I80度),以及在垂直方向各自沿主軸上下移 動,並可在水平方向上前後伸縮。工作時,工廠介面^自 工件傳送盒中提取工件至真空鎖2中,再由傳送室3中之 送裝置I5將工件裝入處理腔室4。 圖9為本發明之傳送裝置位於處理腔室内的俯視圖1 傳送裝置15具有兩個傳送臂151、152 ,該等兩個傳送臂z m52位於同-主轴之上下位置。傳送裝置15之兩個 延臂m、152可在真空鎖2(圖2)及處理腔室4(圖”之 水平面上同步旋轉或獨立旋轉。傳送裝置15每次 0的 街呆一傳 141659.doc -19- 200949899 送I (傳送臂151或傳送臂152)向一處理腔室藉由其工件之 裝卸口 23裝入或卸出一片工件’且傳送裝置15每次在-或 多個真空鎖2中可取出兩片工件。傳送裝置15之每一臂 bl、152可隨傳送裝置15之主軸在垂直方向上下移動調整 、,置並且傳送農置15之每一臂⑸、152均可自由地在水 平方向上前後伸縮。傳送裝置15之兩個傳送臂isi、^可 同夺4曰向某彳向,比如,同時指向同一真空鎖或同一處 理腔室’亦可各自單獨旋轉指向不同的方向,比如,兩個 傳送臂刀別扣向同一真空鎖之兩個不同的製程架,或分W ❹ 指向不同的兩個真空鎖之製程架;或者,—傳送臂指向一 真工鎖,用於向該真空鎖内取或放半導體工件而另一傳 送濛扎向一處理腔室,用於向該處理腔室内取或放半導體 工件;或者,兩個傳送臂分別指向設置於傳送室邊上之兩 個不同的處理腔室,用於分別向兩個處理腔室内取或放半 導體工件。因此’本發明之傳送裝置的多個傳送臂可靈活 :單獨執仃半導體工件之取放動作,可同時自一或多個真 工鎖内裝載或卸載兩片半導體卫件,亦可連續地無等待肖❹ 間地向-或多個處理腔室内完成半導體工件之裒載、卸載 或交換動作,尤其適用於整合有多個真空鎖或處理腔室之 半導體製程處理系統,因而整個半導體製程處理系統之產 出量(throughput)被大大提高。因此,本發明之傳送裝置Η 在工件乂換或裝卸過程中’只需要藉由調整傳送裝置^之 料臂151、m的垂直位置’真空鎖2工件支架與及處理 腔至4中之工件交換平臺25在垂直位置固定’只藉由傳送 141659.doc -20- 200949899 裝置15之運動完成工件交換。 請參看圖10,抽氣隔離板13與加熱基座19之間設有與每 一抽氣隔離孔16相對應的工件交換平臺25。在如圖1〇所示 之實施例中,該工件交換平臺25共有四對傳送臂37與四個 抽氣隔離孔16相對應。該工件交換平臺25可旋轉使其每一 對傳送臂37位於處理平臺5之上方,傳送㈣上方用以置 放半導體工件,藉由配合圖3中之頂針19之動作,可很容 胃地將半導體工件自工件交換平臺25之傳送臂37上置放到 加熱基座19上,或反之,將半導體工件自加熱基座19上置 放到工件交換平臺25之傳送臂37上,此種工件之傳遞動作 在先前技術中很普遍’可有多種方式,此處不詳述。該工 件交換平臺25亦可旋轉使得其中一對與裝卸口 ^正對以 配合傳送室3内之傳送裝置15將工件置放於工件交換平臺 25之—對傳送臂37上或自傳送臂37上卸載工件。 處理完畢後,再將工件取出腔室。先配合圖3中之頂針 ❹ 19的動作,使工件落置於工件交換平臺25上之四對傳送臂 37上。藉由轉動工件交換平臺25,使工件交換平臺25上之 每一對傳送臂37依次移至正對工件裝卸口 23之一側,再 傳送裝置”之傳送臂藉由工件裝㈣3自每—對傳送臂” 上取出處理過之工件,並傳送至真空鎖2。 下面結合所附圖式介紹傳送裝置裝卸工件之流程。如 所示,此處以兩個真空鎖2()1、202、—含有傳送裳置= 之傳送室3以及兩個處理腔室4〇1、術的結構為例。、5 實施例中兩個真空鎖201、2〇2各有四個槽(未圖示) 141659.doc •21· 200949899 裝置15具有兩個傳送臂丨^、152;兩個處理腔室4〇ι及4〇2 分別具有一裝卸口 231、232正對傳送室3,處理腔室4〇1、 402内分別具有四個處理平臺,即處理平臺 513、514以及處理平臺 521、522、523、524。 ❹ 一開始真空鎖2〇1、202内各有四片工件,兩個處理腔室 4〇卜402内無工件。傳送裝置15利用其兩個傳送臂丨51、 152分別自真空鎖2G1之兩個槽中拿出―片工件,此時兩個 傳送臂151、152處於上下垂直位置。再將兩個傳送臂 151、152在水平方向上旋轉至面向處理腔室4〇ι之裝卸口 231處,接著調整傳送臂151之垂直位置,使其正對裝卸口 231,並藉由前後伸縮傳送臂151將傳送臂i5i所持之工件 放在工件交換平臺25上的-對傳送臂37上,工件交換平臺 25旋轉四分之-圈;接下來傳送裝置。之另外一傳送臂 152在垂直方向上調整至正對裝卸口 231處,將傳送臂… 所持之工件放在工件交換平臺25上的下—對傳送㈣上, 工件交換平臺25再旋轉四分之一圈。而後傳送裝置b再返 回原位,自真空鎖2()1之另外兩個槽中取出兩片 :傳:臂151、152旋轉至正對裝卸口-處。重複前述過 轉將=先後放在工件交換平臺25上,工件交換平㈣ 2 對傳送臂37上均承載有工件,再藉由工件 父換平臺25之上下升降及配合頂⑽的 ::理平臺511、512、513,上。如此完成-1= 401之工件裝載I作。再將傳送裝置15退至真 = 置’重複上述步驟完成處理腔室4〇2之工 之位 141659.doc -22- 200949899 裝載完成後,真空鎖201、202可藉由需要自工件匣中重 新裝載工件。以上實施例中,真空鎖2〇1、2〇2中之工件取 放之順序係自由的,並不—定需要自上而下或自下而上。 ❹ 處理腔室401、402處理完成後,需要將處理腔室401°、 402中之已處理過的工件取出,並換上未處理之工件。具 體過程如下:傳送裝置15自真空鎖2〇1中用其傳送臂152自 真空鎖2(Π中之-槽中取出—片未處理的工件,將傳送裳 ㈣旋轉至處理腔室術之|卸口231處。此時假設傳送臂 152在傳送臂151下方,傳送臂151正對裝卸口 hi。傳送臂 151自工件交換平臺25上正對裝仲口 231之一對傳送臂η上 取出一片處理過的工件,取走後,正對裝卸口 231之—對 傳送臂37上無工件,可等待放入一片新的未處理之工件, 接著,傳送臂152上升到正對裝卸口 231之位置,並將复自 真空鎖中取出之-片新的未處理之I件放在卫件交財臺 25上剛取走處理過的工件之一對傳送臂37上,從而可只藉 由傳送裝置15之上下傳送臂151、152的動作,在工件交‘ 平臺25之同-對傳送臂37上用_片新的未處理之工件來換 上一片處理過的工件m交換平臺25再旋轉四分 =一圈。傳送裝置15返回原位,其傳送臂151將其自工件 交換平臺25上取到之工件放在真空鎖2〇1中的槽中傳送 臂152再自真空鎖2〇1中之另一槽中取出—片工件。重複以 上:驟’直到-處理腔室之四片工件全部交換完成後,工 件交換平臺25再統一將工件置放到處理平臺上。緊接著再 進行處理腔室4〇2之工件交換工作。 141659.doc -23- 200949899 ❿ 真空鎖設計之另外一較佳實施例係將真空鎖設計成兩 層,其中上層為交換層用於工件之傳送及交換,而下層則 設有易於散熱之石英墊,如此之設計可加快工件之冷卻速 度。假定有4片工件在處理腔室中處理。工廠介面i會置放 -未處理之工件在交換層,傳送裝置15用傳送们52自真 空鎖之交換層中取出未處理之工件並旋轉至處理腔室4〇1 的裝卸口 231位置。傳送臂151正對農卸口 23ι,傳送臂〖a 在傳送臂下方。傳送臂151將工件交換平臺25上處理完 之工件取出,然後傳送臂152上升至正對裝卸口 231之位 置’將其自真空鎖中取出之工件放在工件交換平㈣上, 工件交換平臺25轉動四分之一。傳送裝置15旋轉至真空鎖 ,傳送臂151將處理完之工件放人其冷卻層傳送臂 152自真空鎖2〇2之交換層中棟起一處新的未處理之工件。 真工鎖2G1及2G2之乂換層自工廠介面1取得新的未處理工 件。真空鎖202之冷卻層冷卻該工件並送至非真空環境中 ❹ :便工廠介面1拾取。以上完成了-片工件之交換。接著 傳送裝置15在完成交描sy、c 士 父換後又返回真空鎖201。重複同樣的 步驟,直至處理腔室4〇]φ &gt; U1中之工件父換完成,再進行處理 腔室402之工件交換過程。 以亡實施例中僅介紹了具有四個處理平臺之處理腔室, 對於母-處理腔室具有其他數目個處理 處理系統亦可依上例簡單類推出其裝却方法。程 由於本發明之傳送裝置具有至少兩個位於上下位置關係 之傳送臂’並且傳送臂可沿傳送裝置主軸在垂直方向上調 I41659.doc -24- 200949899</ RTI> Fig. 2 is a plan view of the semiconductor process processing system of the present invention with the top cover of the chamber omitted. The workpiece is sent from the workpiece to the semiconductor process processing system of the present invention through the assembly line, and the workpiece is removed from the 4 interface i self-defense member g and placed in the vacuum lock 2. A transfer device 设有 is provided in the transfer chamber 3, the device has at least two transfer arms that can be respectively telescoped (described in detail later), and the transfer device 15 has two transfer robots. The system consists of two people. The conveyor 15 places the workpiece from the processing platform 5 in the machine chamber 4 of the true %. In the self-reality take out 'placed everywhere: inside the visit - all processing platforms of the processing chamber to 4 after the completion of the processing, the processing chamber 4 can be processed by the workpiece... :...# transmitted from the transfer chamber 3 The device is placed in the original position and placed in the unprocessed workpiece and then pushed, _ 仵 then the next batch of shoulders 141659.doc -18- 200949899. The removed workpiece is placed in the vacuum lock 2 for cooling. After cooling, it is placed in the workpiece 匣 placed on the assembly line via the factory interface 1 and sent to the next process step for processing. Referring to Figure 8, Figure 8 is a schematic view showing the structure of the vacuum lock 2 and the transfer chamber 3 of the present invention. The present invention has two vacuum locks 2 located in the pentagon transfer chamber 3 adjacent to two adjacent sides of the factory interface 1. Each of the vacuum locks 2 is divided into four slots, each of which can accommodate one workpiece. The vacuum lock 2 and each of its slots can be evacuated. The work etch 1 interface 1 can load or remove the workpieces in the four slots of the vacuum lock 2 一次 one or more times. In still other embodiments, the vacuum lock 2 can be divided into an exchange layer for transferring the workpiece between the vacuum lock 2 and the processing chamber 4, and a cooling layer for cooling the finished workpiece. Take it to a non-vacuum environment for removal from factory interface 1. The transfer chamber 3 in Fig. 8 is a pentagonal vacuum chamber. There is a transfer device 15 in the transfer chamber 3, and the two transfer arms of the transfer device 15 can rotate synchronously or independently rotate the respective angles on a horizontal plane (for example, the two transfer arms can be rotated to each other at an I80 degree), and in the vertical direction. The directions move up and down along the main axis and can be stretched back and forth in the horizontal direction. In operation, the factory interface extracts the workpiece from the workpiece transfer cassette into the vacuum lock 2, and the workpiece is loaded into the processing chamber 4 by the delivery device I5 in the transfer chamber 3. Figure 9 is a plan view of the transfer device of the present invention in the processing chamber. Figure 1 The transfer device 15 has two transfer arms 151, 152 which are located above the same-spindle. The two extension arms m, 152 of the conveyor 15 can be rotated synchronously or independently on the horizontal surface of the vacuum lock 2 (Fig. 2) and the processing chamber 4 (Fig. 2). The conveyor device 15 is 141,659 each time. Doc -19- 200949899 Sending I (transfer arm 151 or transfer arm 152) to a processing chamber by loading or unloading a piece of workpiece by its workpiece loading and unloading port 23' and the transfer device 15 is in each or more than one vacuum lock Two pieces of workpiece can be taken out in 2. Two arms bl, 152 of the conveying device 15 can be moved up and down in the vertical direction with the main axis of the conveying device 15, and each arm (5), 152 of the agricultural device 15 can be freely disposed. Stretching back and forth in the horizontal direction. The two transfer arms iis, ^ of the conveying device 15 can be directed to the same direction, for example, simultaneously pointing to the same vacuum lock or the same processing chamber, and can also be individually rotated to point in different directions. For example, two transfer arm cutters are not buckled to two different process racks of the same vacuum lock, or W ❹ points to different two vacuum lock process racks; or, the transfer arm points to a real lock for Taking or placing a semiconductor workpiece into the vacuum lock while another transfer Monza to a processing chamber for taking or placing a semiconductor workpiece into the processing chamber; or two transfer arms respectively pointing to two different processing chambers disposed on the side of the transfer chamber for respectively The semiconductor workpiece is taken or placed in the processing chamber. Therefore, the plurality of transfer arms of the transfer device of the present invention can be flexibly: the pick-and-place operation of the semiconductor workpiece can be performed separately, and two pieces can be loaded or unloaded from one or more real locks at the same time. The semiconductor device can also continuously perform the loading, unloading or switching operation of the semiconductor workpiece into the processing chamber or the plurality of processing chambers, especially for the semiconductor process in which multiple vacuum locks or processing chambers are integrated. The processing system, and thus the throughput of the entire semiconductor process processing system, is greatly improved. Therefore, the transfer device of the present invention only needs to be adjusted by the transfer arm 151 during the workpiece exchange or loading and unloading process. The vertical position of m 'vacuum lock 2 workpiece holder and the workpiece exchange platform 25 in the processing chamber to 4 are fixed in the vertical position' only by transmitting 141659.doc -20- 200949899 device 1 The movement of 5 completes the workpiece exchange. Referring to Fig. 10, a workpiece exchange platform 25 corresponding to each of the suction isolation holes 16 is provided between the suction separation plate 13 and the heating base 19, as shown in Fig. In the embodiment, the workpiece exchange platform 25 has four pairs of transfer arms 37 corresponding to the four suction isolation holes 16. The workpiece exchange platform 25 is rotatable such that each pair of transfer arms 37 is located above the processing platform 5, and transmits (4) The upper portion is used for placing the semiconductor workpiece, and by the action of the ejector pin 19 in FIG. 3, the semiconductor workpiece can be placed on the heating base 19 from the transfer arm 37 of the workpiece exchange platform 25, or vice versa. The semiconductor workpiece is placed on the transfer arm 37 of the workpiece exchange platform 25 from the heating susceptor 19, and the transfer of such a workpiece is common in the prior art. There are many ways, which are not described in detail herein. The workpiece exchange platform 25 can also be rotated such that one pair is aligned with the loading and unloading port to engage the transfer device 15 in the transfer chamber 3 to place the workpiece on the transfer arm 37 or on the transfer arm 37. Unload the workpiece. After the treatment is completed, the workpiece is taken out of the chamber. First, in conjunction with the action of the ejector pin 19 in Fig. 3, the workpiece is placed on the four pairs of transfer arms 37 on the workpiece exchange platform 25. By rotating the workpiece exchange platform 25, each pair of transfer arms 37 on the workpiece exchange platform 25 is sequentially moved to one side of the workpiece loading and unloading port 23, and the transfer arm of the transfer device is loaded by the workpiece (4) 3 from each pair. The processed workpiece is taken out on the transfer arm and transferred to the vacuum lock 2. The flow of loading and unloading the workpiece by the conveyor will be described below in conjunction with the drawings. As shown here, the structure of the two vacuum locks 2 () 1, 202, - the transfer chamber 3 containing the transfer skirt = and the two processing chambers 4, 1, is exemplified. 5 In the embodiment, the two vacuum locks 201, 2〇2 each have four slots (not shown) 141659.doc • 21· 200949899 The device 15 has two transfer arms 、, 152; two processing chambers 4〇 ι and 4〇2 respectively have a loading and unloading port 231, 232 facing the transfer chamber 3, and processing chambers 4, 1, 402 respectively have four processing platforms, namely, processing platforms 513, 514 and processing platforms 521, 522, 523, 524. ❹ At the beginning, there are four workpieces in each of the vacuum locks 2〇1 and 202, and there are no workpieces in the two processing chambers. The conveying device 15 uses its two transfer arms 51, 152 to take out the "pieces" from the two slots of the vacuum lock 2G1, respectively, and the two transfer arms 151, 152 are in the up and down vertical positions. Then, the two transfer arms 151, 152 are rotated in the horizontal direction to the loading and unloading port 231 facing the processing chamber 4, and then the vertical position of the transfer arm 151 is adjusted so as to face the loading and unloading port 231, and the front and rear telescopic The transfer arm 151 places the workpiece held by the transfer arm i5i on the transfer arm 37 on the workpiece exchange platform 25, and the workpiece exchange platform 25 is rotated by a quarter turn; the transfer device is next. The other transfer arm 152 is vertically adjusted to face the loading and unloading port 231, and the workpiece held by the transfer arm is placed on the lower-to-transfer (4) of the workpiece exchange platform 25, and the workpiece exchange platform 25 is rotated by a further four quarters. A circle. Then, the transport device b is returned to its original position, and two pieces are taken out from the other two slots of the vacuum lock 2 () 1 : the arms 151, 152 are rotated to the right side of the loading and unloading port. Repeating the above-mentioned over-rotation will be placed on the workpiece exchange platform 25 successively, and the workpiece exchange is flat (4). 2 The transfer arm 37 carries the workpiece on the transfer arm 37, and then the upper and lower platform 25 is lifted and lowered by the workpiece parent and the top (10) is matched: 511, 512, 513, on. This completes the workpiece loading I of -1 = 401. Then, the conveyor 15 is retracted to true = "Repeat the above steps to complete the processing chamber 4 〇 2 work position 141659.doc -22- 200949899 After the loading is completed, the vacuum locks 201, 202 can be re-started from the workpiece by the need Load the workpiece. In the above embodiment, the order of the workpieces in the vacuum locks 2〇1, 2〇2 is free, and it is not necessary to be top-down or bottom-up.处理 After the processing chambers 401, 402 are processed, the processed workpieces in the processing chambers 401°, 402 need to be taken out and replaced with unprocessed workpieces. The specific process is as follows: the conveying device 15 uses the transfer arm 152 from the vacuum lock 2〇1 to take out the unloaded workpiece from the vacuum lock 2 (the slot in the slot), and rotates the transport skirt (four) to the processing chamber. At the time of the unloading port 231, it is assumed that the transfer arm 152 is below the transfer arm 151, and the transfer arm 151 is facing the loading and unloading port hi. The transfer arm 151 is taken out from the workpiece exchange platform 25 on the transfer arm 231. After the processed workpiece is removed, the loading and unloading port 231 has no workpiece on the transfer arm 37, and can wait for a new unprocessed workpiece to be placed. Then, the transfer arm 152 rises to the position of the loading and unloading port 231. And removing the new unprocessed I piece from the vacuum lock on the guard money delivery station 25, just removing one of the processed workpieces on the transfer arm 37, so that only the transfer device can be used The action of the upper and lower transfer arms 151, 152 is replaced by a new unprocessed workpiece on the transfer arm 37 with a new unprocessed workpiece on the transfer arm 37. = one turn. The conveyor 15 returns to its original position, its transfer arm 151 takes it from the workpiece The workpiece taken on the platform 25 is placed in the slot in the vacuum lock 2〇1, and the transfer arm 152 is taken out from the other slot in the vacuum lock 2〇1. The above workpiece is repeated: until the processing chamber After all the four workpieces have been exchanged, the workpiece exchange platform 25 unifies the workpiece on the processing platform, and then the workpiece exchange work of the processing chamber 4〇2 is performed. 141659.doc -23- 200949899 真空 Vacuum lock design In another preferred embodiment, the vacuum lock is designed in two layers, wherein the upper layer is an exchange layer for transferring and exchanging workpieces, and the lower layer is provided with a quartz pad which is easy to dissipate heat, so that the design can accelerate the cooling rate of the workpiece. Four workpieces are processed in the processing chamber. The factory interface i places the unprocessed workpieces in the exchange layer, and the transfer device 15 removes the unprocessed workpiece from the vacuum lock exchange layer by the transfer 52 and rotates it to the processing chamber. The loading port 231 of the chamber 4〇1 is located. The transfer arm 151 is opposite to the agricultural discharge port 23, and the transfer arm 〖a is under the transfer arm. The transfer arm 151 takes out the workpiece processed on the workpiece exchange platform 25, and then the transfer arm 152 rises to The position of the loading and unloading port 231 is placed on the workpiece exchange flat (4), and the workpiece exchange platform 25 is rotated by a quarter. The conveying device 15 is rotated to the vacuum lock, and the transfer arm 151 will process the workpiece. The cooling layer transfer arm 152 is placed in a new unprocessed workpiece from the exchange layer of the vacuum lock 2〇2. The real work lock 2G1 and 2G2 are replaced by a new unprocessed workpiece from the factory interface 1. The cooling layer of the vacuum lock 202 cools the workpiece and sends it to a non-vacuum environment. 便: The factory interface 1 picks up. The above completes the exchange of the workpieces. Then the transfer device 15 returns after completing the crossover sy, c. Vacuum lock 201. The same procedure is repeated until the workpiece replacement in the processing chamber 4〇]φ &gt; U1 is completed, and the workpiece exchange process of the processing chamber 402 is performed. In the example of the death, only the processing chamber with four processing platforms is introduced. For the other processing systems of the mother-processing chamber, the loading method can also be introduced according to the simple example of the above. Since the conveying device of the present invention has at least two transfer arms ' in an up and down positional relationship and the transfer arms can be vertically adjusted along the main axis of the transfer device I41659.doc -24- 200949899

節其上下位置’因此,在傳送裝置自真空鎖或處理腔室内 拾取工件時,可只藉由傳送裝置之運動,而不需要真空鎖 或處理腔室在垂直方向調整,即可完成工件裝卸或交換動 作。詳言之’半導體製程處理系統在工件裝却或交換之過 程中’只需要調節傳送裝置之多個傳送臂在垂直方向的位 置’而不需要如先前技術中之半導體製程處理系統要調整 真空鎖或處理腔室在垂直方向的位置。並且,只藉由傳送 裝置之上下傳送臂的動作’使之分別對準處理腔室之裝卸 口,可报容易地在處理腔室内之卫件交換平臺的同—對傳 送臂上用一片新的未處理之工件來換上一片處理過之工 件’從而可更加迅速及低成本地裝卸及交換工件,提高產 本發明運用上述之傳送裝置於半導體製程處理系統中,具 有很多優,點:與先前技術(美國專利第5855681號)所揭露之雙 刀片雙臂(dual blades dual arms)之傳送裝置相比,本發明之像 送裝置的製作成本更低,且在傳送半導體工件之過程中,定 位更靈活且準確度更高;另外,本發明之傳送裝置的至少兩 個傳送臂係沿主軸上下設置的,不同於先前技術之傳送裝置 之雙臂係依水平方向設置的,因而本發明之傳送室可設置得 报小,不僅便於傳送室之設計’而且使整個半導體製程處理 系統之占地面積變小,大大降低製造成本及維護成本。再 者,本發明之傳送裝置的多個傳送臂可靈活地單獨執行半導 體工件之取放動作,可同時自一或多個真空鎖内裝載或卸載 兩片半導體工件,亦可連續地無等待時間地向—或多個處理腔 141659.doc -25- 200949899 室内完成半導體工件之裝載、卸載或交換動作,尤其適用 於整合有多個真空鎖或處理腔室之半導體製程處理系統, 因而整個半導體製程處理系統之產出量被大大提高。 以上介紹之僅為基於本發明之幾個較佳實施例,並不能 以此來限定本發明之範圍。任何對本發明之裝置作本技術 領域内熟知之部件之替換、組合、分立,以及對本發明實 施步驟作本技術領域内熟知之等同改變或替換均不超出本 發明之揭示以及保護範圍。 【圖式簡單說明】 圖1為本發明半導體製程處理系統之立體結構示意圖。 圖2為本發明半導體製程處理系統在省略處理腔室頂蓋 時之俯視圖。 圖3為本發明半導體製程處理系統之處理腔室的結構分 解示意圖。 圖4為本發明半導體製程處理系統之一處理腔室在腔室 頂蓋打開狀態時的示意圖。 圖5為本發明半導體製程處理系統之腔室基盤的底面示 意圖。 圖6為本發明處理腔室之抽氣隔離板的結構示意圖。 圖7為圖4中所示之腔室基盤沿^線剖開的剖視圖。 圖8為本發明真空鎖及傳送室之結構示意圖。 圖9為本發明之傳送裝置位於處理腔室内的俯視圖。 圖10為本發明之工件交換平臺位於處理腔室内的俯視 圖。 141659.doc -26· 200949899 圖^為本發明之半導體工件裝載過程示意圖。 圖12為一現有半導體製程處理系統之示意圖。 圖13為另一現有半導體製程處理系統之示意圖。 【主要元件符號說明】 1 工廠介面 2 真空鎖 3 傳送室 4 處理腔室The upper and lower positions of the section. Therefore, when the conveyor picks up the workpiece from the vacuum lock or the processing chamber, the workpiece can be loaded or unloaded only by the movement of the conveyor without the vacuum lock or the vertical adjustment of the processing chamber. Exchange actions. In detail, the 'semiconductor process processing system only needs to adjust the position of the plurality of transfer arms of the transfer device in the vertical direction during the loading or exchange of the workpieces' without the need to adjust the vacuum locks in the semiconductor process processing system as in the prior art. Or the position of the processing chamber in the vertical direction. Moreover, only by aligning the movement of the upper and lower transfer arms of the transfer device with the loading and unloading ports of the processing chamber, it is possible to easily use a new one on the same-to-transfer arm of the guard exchange platform in the processing chamber. The unprocessed workpiece is replaced with a processed workpiece', so that the workpiece can be loaded and unloaded and exchanged more quickly and at low cost, and the present invention is improved in the semiconductor process processing system using the above-mentioned transfer device, and has many advantages: The image transfer device of the present invention is less expensive to manufacture than the dual blade dual arms transfer device disclosed in the technique (U.S. Patent No. 5,855, 568), and is positioned more during the transfer of the semiconductor workpiece. More flexible and more accurate; in addition, at least two transfer arms of the conveyor of the present invention are disposed above and below the main shaft, and the arms of the prior art transfer device are disposed in a horizontal direction, and thus the transfer chamber of the present invention Can be set to report small, not only facilitates the design of the transfer chamber' but also makes the footprint of the entire semiconductor process processing system smaller, greatly reducing This cause and maintenance costs. Furthermore, the plurality of transfer arms of the transfer device of the present invention can flexibly perform the pick-and-place operation of the semiconductor workpiece separately, and can simultaneously load or unload two semiconductor workpieces from one or more vacuum locks, or continuously without waiting time. Ground-to-multiple processing chambers 141659.doc -25- 200949899 The loading, unloading or exchange of semiconductor workpieces is done indoors, especially for semiconductor process processing systems incorporating multiple vacuum locks or processing chambers, thus the entire semiconductor process The throughput of the processing system is greatly increased. The above description is only based on several preferred embodiments of the present invention and is not intended to limit the scope of the present invention. Any alterations, combinations, and variations of the components of the present invention which are well known in the art may be made without departing from the scope of the invention and the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view showing the structure of a semiconductor process processing system of the present invention. 2 is a top plan view of the semiconductor process processing system of the present invention with the processing chamber top cover omitted. 3 is a schematic diagram showing the structure of a processing chamber of a semiconductor process processing system of the present invention. Figure 4 is a schematic illustration of the processing chamber of one of the semiconductor process processing systems of the present invention in the open state of the chamber header. Figure 5 is a schematic illustration of the bottom surface of a chamber substrate of a semiconductor process processing system of the present invention. Figure 6 is a schematic view showing the structure of the suction partitioning plate of the processing chamber of the present invention. Figure 7 is a cross-sectional view of the chamber base plate shown in Figure 4 taken along line. Figure 8 is a schematic view showing the structure of a vacuum lock and a transfer chamber of the present invention. Figure 9 is a top plan view of the transfer device of the present invention positioned within the processing chamber. Figure 10 is a top plan view of the workpiece exchange platform of the present invention located within the processing chamber. 141659.doc -26· 200949899 Figure 2 is a schematic view of the semiconductor workpiece loading process of the present invention. 12 is a schematic diagram of a conventional semiconductor process processing system. Figure 13 is a schematic illustration of another prior art semiconductor process processing system. [Main component symbol description] 1 Factory interface 2 Vacuum lock 3 Transfer chamber 4 Processing chamber

5 處理平臺 6 反應氣體供應裝置 7 控制、排氣以及動力敦置 8 腔室頂蓋 9 凹陷部 !〇 延伸部 11 噴淋頭 12 細孔 13 抽氣隔離板 14 排氣口 15 傳送裝置 16 抽氣隔離孔 17 排氣槽 18 腔室基盤 19 加熱基座 2〇 頂針 141659.doc -27- 200949899 20, 軸孔 21 排氣通道 22 排氣裝置 23 裝卸口 24 放射狀槽 25 交換平臺 27 連接槽 31 中心軸 31' 軸孔 33 轉軸孔 33, 軸孔 37 傳送臂 101 批量處理系統 102 處理腔室 103 處理平臺 111 傳送室 112 系統 113 處理腔室 151 傳送臂 152 傳送臂 201 真空鎖 202 真空鎖 231 裝卸口 232 裝卸口5 Treatment platform 6 Reactive gas supply unit 7 Control, venting and powering 8 Chamber top cover 9 Recessed part 〇 Extension 11 Sprinkler 12 Fine hole 13 Venting isolation plate 14 Exhaust port 15 Conveying device 16 Pumping Gas isolation hole 17 Exhaust tank 18 Chamber base 19 Heating base 2 thimble 141659.doc -27- 200949899 20, Shaft hole 21 Exhaust passage 22 Exhaust device 23 Loading and unloading port 24 Radial groove 25 Exchange platform 27 Connection groove 31 Center shaft 31' Shaft hole 33 Shaft hole 33, Shaft hole 37 Transfer arm 101 Batch processing system 102 Processing chamber 103 Processing platform 111 Transfer chamber 112 System 113 Processing chamber 151 Transfer arm 152 Transfer arm 201 Vacuum lock 202 Vacuum lock 231 Loading and unloading port 232 loading and unloading port

141659.doc -28- 200949899 401 處理腔室 402 處理腔室 511 處理平臺 512 處理平臺 513 處理平臺 514 處理平臺 521 處理平臺 522 處理平臺 ® 523 處理平臺 524 處理平臺 參 141659.doc141659.doc -28- 200949899 401 Processing Chamber 402 Processing Chamber 511 Processing Platform 512 Processing Platform 513 Processing Platform 514 Processing Platform 521 Processing Platform 522 Processing Platform ® 523 Processing Platform 524 Processing Platform Reference 141659.doc

Claims (1)

200949899 七、申請專利範圍: 一種半導體處理腔室,包括多個處理平臺,其特徵在 於:亦包括一抽氣隔離板置放在處理平臺上,該抽氣隔 離板具有多個與處理平臺對應的抽氣隔離孔,在半導體 處理過程中,藉由抽氣隔離孔使得各處理平臺之反應環 境相互隔離。 2. Φ 3. 如請求項1之半導體處理腔室,其特徵在於:處理腔室 亦包括腔室頂蓋及腔室基盤,處理平臺設置於腔室基盤 内,抽氣隔離板設置於腔室頂蓋與腔室基盤之間。 如請求項2之半導體處理腔室,其特徵在於:其中腔室 頂蓋具有若干凸起之帶有細孔的噴淋頭。 4. 如請求項3之半導體處理腔室,其特徵在於:該抽氣隔 離板上之抽氣隔離孔與該噴淋頭相對應,並且在半導體 工件處理過程中,喷淋頭緊靠抽氣隔離板之抽氣隔離 孔。 ❹ 5.如請求項4之半 _ 二 穴何做隹於:在抽氣隔 離板下方之腔至基盤中具有與每—抽氣隔離孔相對應的 加熱基座’該對應时淋頭、抽氣隔離孔及加熱基座形 成處理平臺。 6· ^請求項丨之半導體處理腔室,其特徵在於·抽氣隔離 ,之周邊設有若干放射狀槽,該放射狀的槽之分佈為靠 近抽氣隔離板周邊之-側較靠近減隔離板巾心的—側 疏。 7.如請求項2之半導體處理腔室,其特徵在於:該腔室頂 141659.doc 200949899 蓋上設置有凹陷部,且凹陷部周邊設有延伸部。 8. 如請求項7之半導體處理腔室’其特徵在於:該抽氣隔 離板周圍亦设置有與腔室頂蓋之凹陷部的延伸部相連通 之排氣口。 9. 如請求項8之半導體處理腔室,其特徵在於:抽氣隔離 板之周圍設有多個對稱的排氣口。 10. 如請求項2之半導體處理腔室,其特徵在於:在腔室基 盤上罪近抽氣隔離板周圍設有至少一用於排氣之排氣 槽。 11. 如凊求項10之半導體處理腔室,其特徵在於:腔室基盤 底邻^有與该排氣槽相通之排氣通道,該排氣通道與排 氣裝置相連。 12. 如請求項丨丨之半導體處理腔室,其特徵在於:該處理腔 室中氣流流向為:反應氣體由喷淋頭送入每一處理平 臺,對置放在加熱基座上之半導體工件進行處理,由於 進氣系統之氣壓以及排氣裝置對反應氣體之抽取,反應 氣體自每一處理平臺之抽氣隔離板的放射狀槽中流出, 進入腔室頂蓋之凹陷部,並向凹陷部之延伸部流動,經 抽氣隔離板之周圍的排氣口流至腔室基盤之排氣槽中, 再藉由與排氣槽相通之排氣通道進入排氣裝置。 13. 如叫求項12之半導體處理腔室,其特徵在於:加熱基座 底部通有惰性氣體以防止微粒塵埃在加熱基座下方沉積 及薄膜生長。 141659.doc200949899 VII. Patent application scope: A semiconductor processing chamber, comprising a plurality of processing platforms, characterized in that: a pumping isolation board is also disposed on the processing platform, and the pumping insulation board has a plurality of processing platforms corresponding to the processing platform. The gas isolating holes are used to isolate the reaction environments of the processing platforms from each other by evacuating the isolation holes during semiconductor processing. 2. Φ 3. The semiconductor processing chamber of claim 1, wherein the processing chamber further comprises a chamber top cover and a chamber base, the processing platform is disposed in the chamber base, and the suction isolation plate is disposed in the chamber Between the top cover and the chamber base. A semiconductor processing chamber according to claim 2, wherein the chamber top cover has a plurality of raised showerheads with fine holes. 4. The semiconductor processing chamber of claim 3, wherein the pumping isolation aperture on the pumping isolation panel corresponds to the showerhead, and the showerhead is in close proximity to the pumping during processing of the semiconductor workpiece. The suction isolation hole of the isolation plate. ❹ 5. If the request item 4 is half _ two holes, what to do: in the cavity below the suction isolation plate to the base plate has a heating base corresponding to each of the suction isolation holes. The gas isolation hole and the heating base form a processing platform. 6. The semiconductor processing chamber of the request item is characterized in that: the air is isolated, and a plurality of radial grooves are arranged around the radial groove, and the radial groove is distributed close to the periphery of the suction isolation plate and is closer to the isolation. The heart of the plate towel - side sparse. 7. The semiconductor processing chamber of claim 2, wherein the chamber top 141659.doc 200949899 is provided with a recessed portion and an extension portion is provided around the recessed portion. 8. The semiconductor processing chamber of claim 7 wherein: the exhaust isolation plate is also provided with an exhaust port in communication with the extension of the recess of the chamber cover. 9. The semiconductor processing chamber of claim 8 wherein the venting spacer is provided with a plurality of symmetrical exhaust ports. 10. The semiconductor processing chamber of claim 2, wherein at least one venting groove for exhausting is provided around the sinister isolation panel on the chamber substrate. 11. The semiconductor processing chamber of claim 10, wherein the bottom of the chamber substrate has an exhaust passage in communication with the exhaust passage, the exhaust passage being coupled to the exhaust device. 12. The semiconductor processing chamber of claim 1, wherein the flow direction of the gas in the processing chamber is: a reaction gas is sent from a shower head to each processing platform, and the semiconductor workpiece is placed on the heating base. After the treatment, due to the air pressure of the intake system and the extraction of the reaction gas by the exhaust device, the reaction gas flows out from the radial groove of the suction isolation plate of each processing platform, enters the concave portion of the top cover of the chamber, and is recessed. The extension of the portion flows, and the exhaust port around the suction partition flows into the exhaust groove of the chamber base, and then enters the exhaust device through the exhaust passage communicating with the exhaust groove. 13. The semiconductor processing chamber of claim 12, wherein the bottom of the heated susceptor is filled with an inert gas to prevent particulate dust from depositing under the heated pedestal and film growth. 141659.doc
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TWI563588B (en) * 2014-10-17 2016-12-21
TWI585025B (en) * 2015-07-22 2017-06-01 Advanced Micro-Fabrication Equipment Inc Vacuum lock system and its handling method for substrate
CN110527946A (en) * 2019-09-04 2019-12-03 苏州沃盾纳米科技有限公司 Coating apparatus

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US5647945A (en) * 1993-08-25 1997-07-15 Tokyo Electron Limited Vacuum processing apparatus
SG70035A1 (en) * 1996-11-13 2000-01-25 Applied Materials Inc Systems and methods for high temperature processing of semiconductor wafers
US6143082A (en) * 1998-10-08 2000-11-07 Novellus Systems, Inc. Isolation of incompatible processes in a multi-station processing chamber
US6827789B2 (en) * 2002-07-01 2004-12-07 Semigear, Inc. Isolation chamber arrangement for serial processing of semiconductor wafers for the electronic industry

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Publication number Priority date Publication date Assignee Title
TWI563588B (en) * 2014-10-17 2016-12-21
TWI585025B (en) * 2015-07-22 2017-06-01 Advanced Micro-Fabrication Equipment Inc Vacuum lock system and its handling method for substrate
CN110527946A (en) * 2019-09-04 2019-12-03 苏州沃盾纳米科技有限公司 Coating apparatus
CN110527946B (en) * 2019-09-04 2024-03-19 立讯电子科技(昆山)有限公司 Coating device

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