TW201614662A - Non-volatile memory device and operating method thereof - Google Patents

Non-volatile memory device and operating method thereof

Info

Publication number
TW201614662A
TW201614662A TW104107180A TW104107180A TW201614662A TW 201614662 A TW201614662 A TW 201614662A TW 104107180 A TW104107180 A TW 104107180A TW 104107180 A TW104107180 A TW 104107180A TW 201614662 A TW201614662 A TW 201614662A
Authority
TW
Taiwan
Prior art keywords
operating method
memory device
volatile memory
memory cells
verify operation
Prior art date
Application number
TW104107180A
Other languages
English (en)
Inventor
Dong-Hun Lee
Original Assignee
Sk Hynix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sk Hynix Inc filed Critical Sk Hynix Inc
Publication of TW201614662A publication Critical patent/TW201614662A/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
TW104107180A 2014-10-13 2015-03-06 Non-volatile memory device and operating method thereof TW201614662A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020140137818A KR20160043436A (ko) 2014-10-13 2014-10-13 불휘발성 메모리 장치 및 이의 동작 방법

Publications (1)

Publication Number Publication Date
TW201614662A true TW201614662A (en) 2016-04-16

Family

ID=55655911

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104107180A TW201614662A (en) 2014-10-13 2015-03-06 Non-volatile memory device and operating method thereof

Country Status (4)

Country Link
US (1) US20160104540A1 (zh)
KR (1) KR20160043436A (zh)
CN (1) CN105513639A (zh)
TW (1) TW201614662A (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016024678A (ja) * 2014-07-22 2016-02-08 株式会社東芝 メモリシステム
US10304551B2 (en) * 2016-06-27 2019-05-28 Sandisk Technologies Llc Erase speed based word line control
KR102609177B1 (ko) * 2016-07-04 2023-12-06 삼성전자주식회사 불휘발성 메모리 시스템의 동작 방법 및 불휘발성 메모리 장치의 동작 방법
KR102263175B1 (ko) * 2017-03-29 2021-06-10 에스케이하이닉스 주식회사 전압 생성 회로를 포함하는 메모리 장치
KR20190012012A (ko) * 2017-07-26 2019-02-08 에스케이하이닉스 주식회사 메모리 장치 및 그것의 동작 방법
KR20190040604A (ko) * 2017-10-11 2019-04-19 에스케이하이닉스 주식회사 메모리 시스템 및 메모리 시스템의 동작 방법
CN111886651B (zh) * 2020-04-28 2021-09-14 长江存储科技有限责任公司 存储器件及其擦除和验证方法
WO2021232223A1 (en) * 2020-05-19 2021-11-25 Yangtze Memory Technologies Co., Ltd. 3d nand flash and operation method thereof
CN113223596B (zh) * 2021-05-25 2022-06-17 长江存储科技有限责任公司 一种三维非易失性存储器及其数据擦除验证方法

Also Published As

Publication number Publication date
KR20160043436A (ko) 2016-04-21
CN105513639A (zh) 2016-04-20
US20160104540A1 (en) 2016-04-14

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