TW201614502A - Selectable memory access time - Google Patents

Selectable memory access time

Info

Publication number
TW201614502A
TW201614502A TW104125961A TW104125961A TW201614502A TW 201614502 A TW201614502 A TW 201614502A TW 104125961 A TW104125961 A TW 104125961A TW 104125961 A TW104125961 A TW 104125961A TW 201614502 A TW201614502 A TW 201614502A
Authority
TW
Taiwan
Prior art keywords
memory access
access time
memory
time interval
interval duration
Prior art date
Application number
TW104125961A
Other languages
English (en)
Other versions
TWI605341B (zh
Inventor
Toru Tanzawa
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of TW201614502A publication Critical patent/TW201614502A/zh
Application granted granted Critical
Publication of TWI605341B publication Critical patent/TWI605341B/zh

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/061—Improving I/O performance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0629—Configuration or reconfiguration of storage systems
    • G06F3/0634—Configuration or reconfiguration of storage systems by changing the state or mode of one or more devices
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0653—Monitoring storage devices or systems
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671—In-line storage system
    • G06F3/0673—Single storage device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Memory System (AREA)
TW104125961A 2014-09-23 2015-08-10 可選擇記憶體存取時間之技術 TWI605341B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/493,682 US9646660B2 (en) 2014-09-23 2014-09-23 Selectable memory access time

Publications (2)

Publication Number Publication Date
TW201614502A true TW201614502A (en) 2016-04-16
TWI605341B TWI605341B (zh) 2017-11-11

Family

ID=55525751

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104125961A TWI605341B (zh) 2014-09-23 2015-08-10 可選擇記憶體存取時間之技術

Country Status (5)

Country Link
US (1) US9646660B2 (zh)
JP (1) JP6374097B2 (zh)
CN (1) CN106575205B (zh)
TW (1) TWI605341B (zh)
WO (1) WO2016048586A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI655578B (zh) * 2017-04-27 2019-04-01 力旺電子股份有限公司 具反熔絲型差動記憶胞之隨機碼產生器及相關感測方法

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US9666300B2 (en) * 2011-09-01 2017-05-30 XiaMen HaiCun IP Technology LLC Three-dimensional one-time-programmable memory comprising off-die address/data-translator
US10088880B2 (en) * 2015-08-27 2018-10-02 Intel Corporation Thermal monitoring of memory resources
KR102465169B1 (ko) * 2015-12-21 2022-11-11 에스케이하이닉스 주식회사 전자 장치
US10528099B2 (en) * 2016-10-10 2020-01-07 Micron Technology, Inc. Configuration update for a memory device based on a temperature of the memory device
CN109408961B (zh) * 2018-10-24 2023-04-18 湖北大学 忆阻器阵列模型的处理方法和装置
JP7095566B2 (ja) 2018-11-20 2022-07-05 Tdk株式会社 メモリコントローラ及びこれを備えるフラッシュメモリシステム
US11710519B2 (en) * 2021-07-06 2023-07-25 Macronix International Co., Ltd. High density memory with reference memory using grouped cells and corresponding operations

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JPH02294856A (ja) 1989-05-10 1990-12-05 Seiko Epson Corp コンピュータ装置
US6282137B1 (en) * 1999-09-14 2001-08-28 Agere Systems Guardian Corp. SRAM method and apparatus
US6314014B1 (en) 1999-12-16 2001-11-06 Ovonyx, Inc. Programmable resistance memory arrays with reference cells
US7418540B2 (en) * 2004-04-28 2008-08-26 Intel Corporation Memory controller with command queue look-ahead
US8065457B2 (en) * 2005-09-09 2011-11-22 Advanced Micro Devices, Inc. Delayed memory access request arbitration
JP2007183816A (ja) * 2006-01-06 2007-07-19 Elpida Memory Inc メモリ制御装置
US7755961B2 (en) 2006-07-07 2010-07-13 Rao G R Mohan Memories with selective precharge
US7739539B2 (en) * 2006-10-13 2010-06-15 Atmel Corporation Read-data stage circuitry for DDR-SDRAM memory controller
US7558097B2 (en) 2006-12-28 2009-07-07 Intel Corporation Memory having bit line with resistor(s) between memory cells
US9122648B2 (en) 2007-08-22 2015-09-01 Advanced Micro Devices, Inc. Temperature throttling mechanism for DDR3 memory
JP2009140322A (ja) * 2007-12-07 2009-06-25 Elpida Memory Inc タイミング制御回路および半導体記憶装置
JP5063337B2 (ja) * 2007-12-27 2012-10-31 株式会社日立製作所 半導体装置
JP2009211735A (ja) * 2008-02-29 2009-09-17 Toshiba Corp 不揮発性記憶装置
WO2010004647A1 (ja) * 2008-07-11 2010-01-14 株式会社ルネサステクノロジ 半導体装置及びｒｆｉｄモジュール
US8009455B2 (en) 2009-01-20 2011-08-30 Ovonyx, Inc. Programmable resistance memory
KR101573723B1 (ko) * 2009-05-13 2015-12-03 삼성전자주식회사 적응적으로 메모리 채널의 신호 강도를 조정하는 데이터 저장 장치 및 그것의 설정 방법
KR101535228B1 (ko) 2009-05-13 2015-07-08 삼성전자주식회사 빌트 오프 테스트 장치
KR20120045197A (ko) * 2010-10-29 2012-05-09 에스케이하이닉스 주식회사 온도에 의존하는 저장 매체를 포함하는 메모리 장치 및 그 구동방법
JP2012203969A (ja) * 2011-03-25 2012-10-22 Toshiba Corp 不揮発性半導体記憶装置
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JP2016520226A (ja) * 2013-05-16 2016-07-11 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッドＡｄｖａｎｃｅｄ Ｍｉｃｒｏ Ｄｅｖｉｃｅｓ Ｉｎｃｏｒｐｏｒａｔｅｄ 領域特有のメモリアクセススケジューリングを有するメモリシステム

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI655578B (zh) * 2017-04-27 2019-04-01 力旺電子股份有限公司 具反熔絲型差動記憶胞之隨機碼產生器及相關感測方法

Also Published As

Publication number Publication date
CN106575205A (zh) 2017-04-19
JP2017528814A (ja) 2017-09-28
US20160085444A1 (en) 2016-03-24
US9646660B2 (en) 2017-05-09
WO2016048586A1 (en) 2016-03-31
JP6374097B2 (ja) 2018-08-15
TWI605341B (zh) 2017-11-11
CN106575205B (zh) 2020-06-23

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