TW201612342A - Sputtering target, optical functional film and layered wiring film - Google Patents

Sputtering target, optical functional film and layered wiring film

Info

Publication number
TW201612342A
TW201612342A TW104120555A TW104120555A TW201612342A TW 201612342 A TW201612342 A TW 201612342A TW 104120555 A TW104120555 A TW 104120555A TW 104120555 A TW104120555 A TW 104120555A TW 201612342 A TW201612342 A TW 201612342A
Authority
TW
Taiwan
Prior art keywords
film
sputtering target
optical functional
layered wiring
functional film
Prior art date
Application number
TW104120555A
Other languages
Chinese (zh)
Other versions
TWI654328B (en
Inventor
Atsushi Saito
shou-bin Zhang
Ichiro Shiono
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Publication of TW201612342A publication Critical patent/TW201612342A/en
Application granted granted Critical
Publication of TWI654328B publication Critical patent/TWI654328B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/04—Alloys based on tungsten or molybdenum
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C22C38/12—Ferrous alloys, e.g. steel alloys containing tungsten, tantalum, molybdenum, vanadium, or niobium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/05—Alloys based on copper with manganese as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/113—Anti-reflection coatings using inorganic layer materials only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

The sputtering target of the present invention includes as metal elements: one or two selected from Mo and In; and one or two selected from Cu and Fe as major components. The contents of one or two selected from Mo and In and one or two selected from Cu and Fe are 5-80 at% and 20-95 at%, respectively. Part or all of the metal elements are oxide.
TW104120555A 2014-06-27 2015-06-25 Sputtering target, optical functional film and layered wiring film TWI654328B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2014132524 2014-06-27
JP2014-132524 2014-06-27
JP2015116826A JP6801168B2 (en) 2014-06-27 2015-06-09 Sputtering target, optical functional film, and laminated wiring film
JP2015-116826 2015-06-09

Publications (2)

Publication Number Publication Date
TW201612342A true TW201612342A (en) 2016-04-01
TWI654328B TWI654328B (en) 2019-03-21

Family

ID=54938233

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104120555A TWI654328B (en) 2014-06-27 2015-06-25 Sputtering target, optical functional film and layered wiring film

Country Status (4)

Country Link
JP (1) JP6801168B2 (en)
CN (1) CN106062241B (en)
TW (1) TWI654328B (en)
WO (1) WO2015199155A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6380057B2 (en) * 2014-11-28 2018-08-29 住友金属鉱山株式会社 Conductive substrate and method for manufacturing the same
JP6997945B2 (en) * 2016-12-27 2022-01-18 日立金属株式会社 Laminated wiring film and its manufacturing method and Mo alloy sputtering target material
JP2019137875A (en) * 2018-02-06 2019-08-22 三菱マテリアル株式会社 Sputtering target, and manufacturing method of sputtering target
JP7081394B2 (en) * 2018-08-28 2022-06-07 三菱マテリアル株式会社 Sputtering target and manufacturing method of sputtering target

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2714069B2 (en) * 1988-11-28 1998-02-16 株式会社東芝 Liquid crystal display
JPH10301499A (en) * 1997-04-22 1998-11-13 Ulvac Seimaku Kk Blanks or black matrix and their production
JP2001296531A (en) * 2000-04-17 2001-10-26 Matsushita Electric Ind Co Ltd Liquid crystal panel
JP4009086B2 (en) * 2000-10-31 2007-11-14 株式会社フルヤ金属 Sputtering target, light shielding film, color filter, and display element body
JP4419037B2 (en) * 2000-11-27 2010-02-24 三菱マテリアル株式会社 Sputtering target for forming black matrix light-shielding film
JP2004291464A (en) * 2003-03-27 2004-10-21 Bridgestone Corp Gas barrier anti-reflective film and method for manufacturing it
CN100452205C (en) * 2005-02-07 2009-01-14 株式会社神户制钢所 Recording film for use in optical information recording medium, optical information recording medium, and sputtering target
JP5081960B2 (en) * 2010-08-31 2012-11-28 Ｊｘ日鉱日石金属株式会社 Oxide sintered body and oxide semiconductor thin film
CN101994085A (en) * 2010-11-25 2011-03-30 昆明理工大学 High-heat stability amorphous film of copper-refractory metal and preparation method thereof
CN102747332A (en) * 2011-04-21 2012-10-24 鸿富锦精密工业（深圳）有限公司 Preparation method of coated article and coated article prepared by it
CN102560186B (en) * 2012-02-21 2013-04-17 苏州晶纯新材料有限公司 Copper-indium-gallium alloy and preparation method thereof
JP6050050B2 (en) * 2012-08-14 2016-12-21 山陽特殊製鋼株式会社 Fe-Co alloy sputtering target material and method for producing the same
CN103114264B (en) * 2012-12-28 2015-04-08 中国神华能源股份有限公司 Preparation method for copper-indium alloy target for sputtering
CN103325879B (en) * 2013-07-03 2016-06-01 黑龙江汉能薄膜太阳能有限公司 Efficient triple stack layers hetero-junction thin-film solar cell and its preparation method
JP6369750B2 (en) * 2013-09-10 2018-08-08 日立金属株式会社 LAMINATED WIRING FILM, MANUFACTURING METHOD THEREOF, AND NI ALLOY SPUTTERING TARGET MATERIAL

Also Published As

Publication number Publication date
JP2016027195A (en) 2016-02-18
CN106062241A (en) 2016-10-26
TWI654328B (en) 2019-03-21
WO2015199155A1 (en) 2015-12-30
JP6801168B2 (en) 2020-12-16
CN106062241B (en) 2019-10-18

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees