TW201611347A - 覆晶式發光二極體封裝結構 - Google Patents
覆晶式發光二極體封裝結構 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
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Abstract
一種覆晶式發光二極體封裝結構,包括基板及位於基板之上的LED晶片,所述LED晶片包括P電極和N電極,還包括固定於基板的第一電極和第二電極,所述第一電極和第二電極分別具有位於基板頂面之上的第一凸起和第二凸起,所述P電極與N電極分別通過導電膠固定於所述第一凸起和第二凸起的頂面且P電極及N電極的底面邊緣超出所述第一凸起及第二凸起的頂面邊緣。
Description
本發明涉及一種半導體發光元件,特別涉及一種覆晶式發光二極體封裝結構。
發光二極體因具有生產成本低、結構簡單、低能耗低污染、體積小及容易安裝等優勢被大量用於照明光源及顯示技術中。
習知的覆晶式發光二極體包括依次堆疊設置的N型半導體層、發光層、P型半導體層及形成在覆晶式發光二極體形同一側並與N型半導體層及P型半導體層電連接的N電極及P電極。在覆晶式發光二極體封裝時,所述覆晶式發光二極體通過導電膠固定在基板上,並將覆晶式發光二極體電極與基板上對應電極連接。然而在通常情況下,因為導電膠會沿著導熱率大的N電極及P電極流動而使N電極與P電極之間虛焊而導致爬錫現象產生,進而導致N電極與P電極之間容易發生短路,使得覆晶式發光二極體結構不能正常工作,而且因爬錫而露出至覆晶式發光二極體外部的導電膠會吸收覆晶式發光二極體邊緣發出的光線,導致覆晶式發光二極體出光效率降低。
有鑑於此,有必要提供一種性能穩定出光效率高的覆晶式發光二極體封裝結構。
一種覆晶式發光二極體封裝結構,包括基板及位於基板之上的LED晶片,所述LED晶片包括P電極和N電極,還包括固定於基板的第一電極和第二電極,所述第一電極和第二電極分別具有位於基板頂面之上的第一凸起和第二凸起,所述P電極與N電極分別通過導電膠固定於所述第一凸起和第二凸起的頂面且P電極及N電極的底面邊緣超出所述第一凸起及第二凸起的頂面邊緣。
本發明所述覆晶式發光二極體的封裝結構可以避免所述LED晶片封裝過程中導電膠爬錫而造成LED晶片短路,提升覆晶式發光二極體的穩定性及出光效率。
圖1係本發明第一實施例所示覆晶式發光二極體封裝基板的剖視圖。
圖2係本發明第一實施例所示覆晶式發光二極體封裝結構剖視圖。
圖3係本發明第二實施例所示覆晶式發光二極體的封裝結構的剖視圖。
如圖1-2所示,本發明第一實施例中的覆晶式發光二極體封裝結構包括基板10、貫穿於基板10內的第一電極20和第二電極30,以及位於基板10之上與第一電極20及第二電極30電連接的LED晶片40。
所述基板10由絕緣材料製成,呈平板狀。所述的第一電極20及第二電極30分別自基板10底部貫穿頂部,將基板10分割為相互獨立的第一基板11、第二基板12和第三基板13。所述的第一電極20及第二電極30之間通過第二基板12間隔。
所述LED晶片40為為覆晶式發光二極體結構。所述LED晶片40包括由金屬材質製成的一P電極41和一N電極42。所述LED晶片40通過導電膠60固定於所述第一電極20或第二電極30之上。
所述第一電極20和第二電極30由導熱及導電性能良好的材料製成,且第一電極20及第二電極30的高度大於基板10的高度。所述第一電極20包括位於基板10底部的一第一焊接部21、位於基板10頂部的一第一凸起22,以及連接第一焊接部21和第一凸起22的第一連接部23。同理,所述第二電極30包括位於基板10底部的一第二焊接部31、位於基板10頂部的一第二凸起32,以及連接第二焊接部31及第二凸起32的第二連接部33。所述第一連接部23和第二連接部33的縱截面呈矩形。所述第一凸起22、第二凸起32以及第一焊接部21、第二焊接部31的縱截面亦呈矩形。所述第一焊接部21及第二焊接部31的縱截面面積分別大於所述第一凸起22及第二凸起32的縱截面面積。所述第一凸起22和第二凸起32用於承載LED晶片40,所述第一凸起22和第二凸起32的頂面面積之和小於所述P電極41和N電極42的底面積之和。
在固晶過程中,先將LED晶片40固定於基板10上,所述LED晶片40的P電極41及N電極42通過導電膠60與第一凸起22或第二凸起32連接。因第一凸起22和第二凸起32的頂部面積小於所述P電極41及N電極42的底面積之和,即所述P電極41及所述N電極42底部邊緣超出所述第一凸起22及第二凸起32的頂部邊緣。所以通過導電膠60固定所述LED晶片40於第一凸起22及第二凸起32之上時,第一凸起22及第二凸起32的邊緣可引導導電膠60在重力的作用下沿其周緣往下流動,從而使得導電膠60填滿塗設於第一凸起22和第二凸起32與LED晶片40之間外,溢出的導電膠60收容於第一凸起22和第二凸起32週邊處並與P電極41、N電極42接觸將LED晶片40進一步固定連接。如此,避免了大量導電膠60因爬錫而造成LED晶片40的P電極41與N電極42發生短路。進一步地,導電膠60流向第一凸起22及第二凸起32外側周緣處可避免導電膠60包裹LED晶片40週邊,從而提高出光效率。
如圖3所示,為本發明第二實施例所述覆晶式發光二極體封裝結構,其與第一實施例中所述覆晶式發光二極體封裝結構相似。其不同在於:所述基板10上形成有封裝膠體層50,所述封裝膠體層50中包含有螢光粉。所述封裝膠體層50覆蓋所述LED晶片40,用於保護所述LED晶片40免受如水汽、灰塵等侵害。
10‧‧‧基板
20‧‧‧第一電極
30‧‧‧第二電極
40‧‧‧LED晶片
41‧‧‧P電極
42‧‧‧N電極
無
10‧‧‧基板
20‧‧‧第一電極
30‧‧‧第二電極
31‧‧‧第二焊接部
32‧‧‧第二凸起
33‧‧‧第二連接部
40‧‧‧LED晶片
41‧‧‧P電極
42‧‧‧N電極
50‧‧‧封裝膠體層
60‧‧‧導電膠
Claims (9)
- 一種覆晶式發光二極體封裝結構,包括基板及位於基板之上的LED晶片,所述LED晶片包括P電極和N電極,還包括固定於基板的第一電極和第二電極,其改良在於:所述第一電極和第二電極分別具有位於基板頂面之上的第一凸起和第二凸起,所述P電極與N電極分別通過導電膠固定於所述第一凸起和第二凸起的頂面且P電極及N電極的底面邊緣超出所述第一凸起及第二凸起的頂面邊緣。
- 如申請專利範圍第1項所述覆晶式發光二極體封裝結構,其中:所述第一電極和第二電極進一步包括位於基板底部的第一焊接部和第二焊接部,以及連接第一焊接部和第一凸起的第一連接部、連接第二焊接部和第二凸起的第二連接部。
- 如申請專利範圍第1項所述覆晶式發光二極體封裝結構,其中:所述第一電極和第二電極將基板分割為相互獨立的第一基板、第二基板和第三基板,所述第二基板位於第一電極和第二電極之間並將第一電極與第二電極間隔。
- 如申請專利範圍第2項所述覆晶式發光二極體封裝結構,其中:所述第一凸起、第二凸起以及第一焊接部和第二焊接部的縱截面呈矩形,所述第一焊接部、第二焊接部的縱截面面積分別大於所述第一凸起、第二凸起的縱截面面積。
- 如申請專利範圍第2項所述覆晶式發光二極體封裝結構,其中:所述第一連接部和第二連接部的縱截面呈矩形。
- 如申請專利範圍第1項所述覆晶式發光二極體封裝結構,其中:所述基板上還形成有封裝膠體層,所述封裝膠體層包覆所述LED晶片。
- 如申請專利範圍第1項所述覆晶式發光二極體封裝結構,其中:所述基板由絕緣材料製成。
- 如申請專利範圍第1項所述覆晶式發光二極體封裝結構,其中:所述P電極和N電極由金屬材料製成。
- 如申請專利範圍第1項所述覆晶式發光二極體封裝結構,其中:所述第一電極和第二電極由導熱及導電性能良好的材料製成。
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CN201410445082.0A CN105428510B (zh) | 2014-09-03 | 2014-09-03 | 覆晶式发光二极管封装结构 |
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US5998232A (en) * | 1998-01-16 | 1999-12-07 | Implant Sciences Corporation | Planar technology for producing light-emitting devices |
JP4317697B2 (ja) * | 2003-01-30 | 2009-08-19 | パナソニック株式会社 | 光半導体ベアチップ、プリント配線板、照明ユニットおよび照明装置 |
US7919787B2 (en) * | 2003-06-27 | 2011-04-05 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Semiconductor device with a light emitting semiconductor die |
KR100975521B1 (ko) * | 2003-10-04 | 2010-08-12 | 삼성전자주식회사 | 발광 소자 조립체 |
JP2006100787A (ja) * | 2004-08-31 | 2006-04-13 | Toyoda Gosei Co Ltd | 発光装置および発光素子 |
US7417220B2 (en) * | 2004-09-09 | 2008-08-26 | Toyoda Gosei Co., Ltd. | Solid state device and light-emitting element |
JP2006147630A (ja) * | 2004-11-16 | 2006-06-08 | Matsushita Electric Works Ltd | 半導体装置およびその評価方法 |
US20060208364A1 (en) * | 2005-03-19 | 2006-09-21 | Chien-Jen Wang | LED device with flip chip structure |
US8878219B2 (en) * | 2008-01-11 | 2014-11-04 | Cree, Inc. | Flip-chip phosphor coating method and devices fabricated utilizing method |
JP5378130B2 (ja) * | 2009-09-25 | 2013-12-25 | 株式会社東芝 | 半導体発光装置 |
US8556672B2 (en) * | 2010-01-29 | 2013-10-15 | Citizen Electronics Co., Ltd. | Method of producing light-emitting device and light-emitting device |
JP2011233650A (ja) * | 2010-04-26 | 2011-11-17 | Toshiba Corp | 半導体発光装置 |
CN102800778B (zh) * | 2011-05-27 | 2015-03-18 | 东莞市福地电子材料有限公司 | 一种芯片倒装的发光二极管及其制造方法 |
TWI455665B (zh) * | 2012-11-05 | 2014-10-01 | Ritedia Corp | 覆晶式發光二極體封裝模組及其製法 |
US9548424B2 (en) * | 2013-02-04 | 2017-01-17 | Industrial Technology Research Institute | Light emitting diode |
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CN105428510B (zh) | 2018-01-30 |
CN105428510A (zh) | 2016-03-23 |
US9147809B1 (en) | 2015-09-29 |
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