TW201601229A - Solder pin - Google Patents

Solder pin Download PDF

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Publication number
TW201601229A
TW201601229A TW104114975A TW104114975A TW201601229A TW 201601229 A TW201601229 A TW 201601229A TW 104114975 A TW104114975 A TW 104114975A TW 104114975 A TW104114975 A TW 104114975A TW 201601229 A TW201601229 A TW 201601229A
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Taiwan
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pressing surface
wire
chamfered portion
concave
convex
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TW104114975A
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Chinese (zh)
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TWI609437B (en
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Jumpei Onishi
Soichiro Oka
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Toto Ltd
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Publication of TWI609437B publication Critical patent/TWI609437B/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
    • H01L2224/78302Shape
    • H01L2224/78305Shape of other portions

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Abstract

The object of the present is to inhibit cracks on a solder wire and improve bonding strength at the same time. The solution according to an embodiment of the present invention is to provide a solder pin which is characterized by comprising: a pressing surface for pressing a solder wire; an insertion hole with the solder wire inserted therethrough; a tapered hole connected to the insertion hole and the pressing surface and expanding toward the pressing surface; and a chamfered portion disposed between the tapered hole and the pressing surface. The surface of the chamfered portion has a concave-convex shape. Sharpness of a convex portion of the concave-convex shape is less than that of a concave portion of the concave-convex shape.

Description

銲針Solder pin

所揭示的實施形態是關於銲針(bonding capillary)。The disclosed embodiment relates to a bonding capillary.

以往將半導體晶片與導線架(lead frame)電性連接的方法之一已知有打線接合(wire bonding)。打線接合是藉由在半導體晶片及導線架的電極間架設被稱為銲線(bonding wire)的金屬線將半導體晶片與導線架電性連接的方法。One of the methods for electrically connecting a semiconductor wafer to a lead frame has been known as wire bonding. Wire bonding is a method of electrically connecting a semiconductor wafer and a lead frame by arranging a metal wire called a bonding wire between the electrodes of the semiconductor wafer and the lead frame.

在打線接合中使用被稱為銲針的筒狀的工具(tool)。具體上,藉由將銲線穿通於銲針的內部並由頂端使其突出,使用銲針的頂端面將突出的銲線按壓於電極。進而將超音波施加於銲針使頂端面振動,將銲線塗在電極。據此,銲線被接合於電極。A cylindrical tool called a welding pin is used in the wire bonding. Specifically, the wire is passed through the inside of the welding pin and protruded from the tip end, and the protruding wire is pressed against the electrode using the tip end surface of the welding pin. Further, ultrasonic waves are applied to the welding pins to vibrate the tip end surface, and the bonding wires are applied to the electrodes. According to this, the bonding wire is bonded to the electrode.

作為銲針為了防止銲線之附著於頂端面,已知有在插通有銲線的插通孔的開口部周緣設置規定的曲率的R部(例如參照專利文獻1)。In order to prevent the bonding wire from adhering to the tip end surface, it is known that the R portion having a predetermined curvature is provided around the opening of the insertion hole through which the bonding wire is inserted (see, for example, Patent Document 1).

[專利文獻1] 日本國特開平9-326411號公報[Patent Document 1] Japanese Patent Publication No. 9-326411

但是,當使用具有上述的R部的銲針進行打線接合時,有很難得到接合強度之問題。此乃因由於設置R部而使對銲線的抓緊力降低,很難將銲線塗在電極。However, when the wire bonding is performed using the welding pin having the above-described R portion, it is difficult to obtain the joint strength. This is because it is difficult to apply the bonding wire to the electrode because the holding force of the wire is lowered due to the provision of the R portion.

這種接合強度的問題在使用Al(鋁)製的銲線進行打線接合的情形下變得顯著。此乃因與作為銲線的材料一般被使用的Au(金)比較,Al容易氧化,由於形成於表面的氧化膜而使與電極的接合容易被阻礙。The problem of such joint strength becomes remarkable in the case of wire bonding using a bonding wire made of Al (aluminum). This is because Al is easily oxidized as compared with Au (gold) which is generally used as a material of the bonding wire, and bonding to the electrode is easily hindered by the oxide film formed on the surface.

而且,在Al製的銲線也有與Au製的銲線比較容易產生裂痕(crack)之問題。因此,在使用Al製的銲線進行打線接合的情形下,使提高接合強度與抑制裂痕的產生並存較佳。Further, in the bonding wire made of Al, there is a problem that cracks are likely to occur in comparison with the bonding wire made of Au. Therefore, in the case where wire bonding is performed using a bonding wire made of Al, it is preferable to increase the bonding strength and suppress the occurrence of cracks.

實施形態的一態樣其目的為提供一種銲針,可抑制裂痕之產生於銲線,同時可提高接合強度。An object of the embodiment is to provide a welding pin which can suppress the occurrence of cracks in the bonding wire and at the same time improve the bonding strength.

與實施形態的一態樣有關的銲針,其特徵在於包含:緊壓銲線的緊壓面;插通有前述銲線的插通孔;連接前述插通孔與前述緊壓面,朝前述緊壓面擴展的錐形孔;設置於前述錐形孔與前述緊壓面之間的倒角部,前述倒角部在表面具有凹凸形狀,且前述凹凸形狀中的凸部的尖銳度比前述凹凸形狀中的凹部的尖銳度小。A welding pin according to an embodiment of the embodiment, comprising: a pressing surface for pressing the bonding wire; an insertion hole through which the bonding wire is inserted; connecting the insertion hole and the pressing surface toward the foregoing a tapered hole extending from the pressing surface; a chamfered portion provided between the tapered hole and the pressing surface, wherein the chamfered portion has a concave-convex shape on the surface, and the sharpness of the convex portion in the concave-convex shape is longer than the foregoing The sharpness of the concave portion in the uneven shape is small.

因可藉由在錐形孔與緊壓面之間設置倒角部緩和給予銲線的應力,故可抑制裂痕之產生於銲線。而且,因可藉由在倒角部的表面設置凹凸形狀,提高將銲線塗在電極時的對銲線的抓緊力,故可提高接合強度。另一方面,在僅設置凹凸形狀下有因凹凸形狀中的凸部的尖銳而使金屬線(wire)刮傷之虞,由於該傷痕而有在金屬線容易產生裂痕之虞。因此,使凹凸形狀中的凸部的尖銳度比凹部的尖銳度小。據此,可抑制起因於凹凸形狀的裂痕的產生。Since the stress applied to the bonding wire can be relieved by providing a chamfered portion between the tapered hole and the pressing surface, generation of cracks in the bonding wire can be suppressed. Further, since the uneven shape can be provided on the surface of the chamfered portion, the gripping force against the bonding wire when the bonding wire is applied to the electrode can be improved, so that the bonding strength can be improved. On the other hand, in the case where only the uneven shape is provided, the wire is scratched due to the sharpness of the convex portion in the uneven shape, and the metal wire is likely to be cracked due to the flaw. Therefore, the sharpness of the convex portion in the uneven shape is made smaller than the sharpness of the concave portion. According to this, it is possible to suppress the occurrence of cracks due to the uneven shape.

而且,其特徵在於:前述倒角部的凹凸形狀為偏斜度(skewness)為-0.164以下且平均高度為0.035μm以上0.092μm以下。Further, the concavo-convex shape of the chamfered portion has a skewness of -0.164 or less and an average height of 0.035 μm or more and 0.092 μm or less.

據此,在使用Al製的銲線進行打線接合的情形下,可適宜地抑制第一銲(first bonding)程序後的裂痕之產生於銲線。而且,在第二銲(second bonding)程序後的尾部(tail)部分中可得到充分的接合強度。According to this, in the case where the wire bonding is performed using the bonding wire made of Al, it is possible to suitably suppress the occurrence of cracks after the first bonding process on the bonding wire. Moreover, sufficient joint strength can be obtained in the tail portion after the second bonding process.

而且,其特徵在於:前述緊壓面具有凹凸形狀,且前述緊壓面的凹凸形狀中的凸部的尖銳度比前述倒角部的凹凸形狀中的凸部的尖銳度大。Further, the pressing surface has a concavo-convex shape, and the sharpness of the convex portion in the concavo-convex shape of the pressing surface is larger than the sharpness of the convex portion in the concavo-convex shape of the chamfered portion.

緊壓面與倒角部比較很難使裂痕產生於銲線。因此,在緊壓面中由重視抓緊力的提高而不是重視防止裂痕的產生的觀點,以上述構成也可以。藉由以上述構成,可更提高對銲線的抓緊力。It is difficult to cause cracks to be generated on the weld line when the pressing surface is opposite to the chamfered portion. Therefore, in the pressing surface, the above-described configuration may be employed in view of the improvement of the gripping force rather than the prevention of the occurrence of cracks. With the above configuration, the gripping force on the bonding wire can be further improved.

而且,其特徵在於:前述緊壓面中的凹凸形狀為平均高度為0.113μm以上。Further, the uneven shape in the pressing surface has an average height of 0.113 μm or more.

據此,在使用Al製的銲線進行打線接合的情形下,在第二銲程序後的縫接(stitch)部分中可得到充分的接合強度。According to this, in the case where the wire bonding is performed using the bonding wire made of Al, a sufficient bonding strength can be obtained in the stitch portion after the second welding process.

而且,其特徵在於:前述倒角部具有平滑地連續於前述錐形孔及前述緊壓面的曲面,且前述曲面的曲率半徑為4.55μm以上20.30μm以下。Further, the chamfered portion has a curved surface that smoothly continues to the tapered hole and the pressing surface, and the curved surface has a radius of curvature of 4.55 μm or more and 20.30 μm or less.

據此,在使用Al製的銲線進行打線接合的情形下,可適宜地抑制裂痕之產生於銲線。而且,可適宜地抑制第二銲程序後的銲線的切斷不良的發生。According to this, in the case where the wire bonding is performed using the bonding wire made of Al, it is possible to suitably suppress the occurrence of cracks in the bonding wire. Further, it is possible to suitably suppress the occurrence of the cutting failure of the bonding wire after the second welding process.

而且,其特徵在於:前述倒角部具有平滑地連續於前述錐形孔及前述緊壓面的曲面,且前述曲面的曲率半徑為12.8μm以上20.30μm以下。Further, the chamfered portion has a curved surface that smoothly continues to the tapered hole and the pressing surface, and the curved surface has a radius of curvature of 12.8 μm or more and 20.30 μm or less.

據此,在使用Al製的銲線進行打線接合的情形下,即使銲線的線弧長度(loop length)為3mm以上,也可適宜地抑制裂痕之產生於銲線。而且,可適宜地抑制第二銲程序後的銲線的切斷不良的發生。According to this, in the case where the wire bonding is performed using the bonding wire made of Al, even if the loop length of the bonding wire is 3 mm or more, it is possible to suitably suppress the occurrence of cracks in the bonding wire. Further, it is possible to suitably suppress the occurrence of the cutting failure of the bonding wire after the second welding process.

而且,其特徵在於:前述錐形孔的錐角為100°以下。Further, it is characterized in that the taper angle of the tapered hole is 100 or less.

據此,在前述插通孔與前述錐形孔的邊界角部中可適宜地抑制裂痕之產生於銲線。According to this, in the boundary corner portion between the insertion hole and the tapered hole, it is possible to suitably suppress the occurrence of cracks in the bonding wire.

而且,其特徵在於:前述緊壓面的外徑為前述銲線的線徑的4.0倍以上5.7倍以下。Further, the outer diameter of the pressing surface is 4.0 times or more and 5.7 times or less the wire diameter of the bonding wire.

據此,可得到所希望的接合強度。According to this, the desired joint strength can be obtained.

依照實施形態的一態樣,可抑制裂痕之產生於銲線,同時可提高接合強度。According to an aspect of the embodiment, it is possible to suppress the occurrence of cracks in the bonding wire and to improve the bonding strength.

以下,參照添附圖式詳細地說明本案所揭示的銲針的實施形態。此外,本發明不是藉由以下所示的實施形態而被限定。Hereinafter, an embodiment of the welding pin disclosed in the present invention will be described in detail with reference to the accompanying drawings. Further, the present invention is not limited by the embodiments described below.

(實施形態) 首先,就與本實施形態有關的銲針的全體構成參照圖1及圖2進行說明。圖1是顯示與本實施形態有關的銲針之模式側視圖。而且,圖2是圖1所示的H1部之模式放大視圖。(Embodiment) First, the overall configuration of a welding pin according to this embodiment will be described with reference to Figs. 1 and 2 . Fig. 1 is a schematic side view showing a welding pin according to the embodiment. 2 is a schematic enlarged view of the H1 portion shown in FIG. 1.

如圖1所示,與本實施形態有關的銲針1(以下記載為[銲針1])具有插通有銲線(以下記載為[金屬線])的插通孔11。此外,銲針1藉由例如陶瓷(ceramic)形成。作為銲針1的材料例如可舉出氧化鋁(alumina)等。或者作為銲針1的材料可舉出包含氧化鋁,與氧化鋯(zirconia)及氧化鉻(chromia)的至少任一個的複合材料等。As shown in Fig. 1, the welding pin 1 (hereinafter referred to as "welding pin 1") according to the present embodiment has an insertion hole 11 through which a bonding wire (hereinafter referred to as "metal wire") is inserted. Further, the welding pin 1 is formed by, for example, ceramic. The material of the welding pin 1 is, for example, alumina or the like. Alternatively, as the material of the welding pin 1, a composite material containing alumina and at least one of zirconia and chromia may be mentioned.

銲針1包含圓筒部12、圓錐部13、瓶頸部14。圓錐部13為配設於圓筒部12的一端的部位,具有朝頂端側縮徑的形狀。瓶頸部14為配設於圓錐部13的頂端的部位,具有比圓錐部13的頂端徑更小的直徑。插通孔11以貫通該等圓筒部12、圓錐部13及瓶頸部14的方式被設置。The welding pin 1 includes a cylindrical portion 12, a conical portion 13, and a neck portion 14. The conical portion 13 is a portion disposed at one end of the cylindrical portion 12 and has a shape that is reduced in diameter toward the distal end side. The neck portion 14 is a portion disposed at the distal end of the conical portion 13 and has a smaller diameter than the distal end diameter of the conical portion 13 . The insertion hole 11 is provided to penetrate the cylindrical portion 12, the conical portion 13, and the neck portion 14.

如圖2所示,在瓶頸部14的頂端面之緊壓面30與插通孔11之間設有錐形孔20。錐形孔20以自插通孔11朝緊壓面30擴徑的方式被進行錐形加工。As shown in FIG. 2, a tapered hole 20 is provided between the pressing surface 30 of the tip end surface of the neck portion 14 and the insertion hole 11. The tapered hole 20 is tapered in such a manner as to expand from the insertion hole 11 toward the pressing surface 30.

如上述構成的銲針1藉由使用緊壓面30將自錐形孔20朝外部突出的金屬線按壓於電極,藉由超音波使緊壓面30振動而將金屬線塗在電極,使金屬線接合於電極。The welding pin 1 configured as described above presses the wire protruding from the tapered hole 20 to the outside by using the pressing surface 30, and the pressing surface 30 is vibrated by ultrasonic waves to apply the metal wire to the electrode to make the metal The wire is bonded to the electrode.

此處,作為金屬線的材料一般使用Au(金)。對此,半導體晶片的電極之墊電極(pad electrode)一般使用Al(鋁)。如此若將異種的金屬彼此之Au與Al接合,則有在接合界面產生空隙(void)使接合強度降低之虞。而且,由於使用昂貴的Au,因此也有半導體元件(semiconductor device)的製造成本變高的問題。Here, as the material of the metal wire, Au (gold) is generally used. In this regard, a pad electrode of an electrode of a semiconductor wafer is generally made of Al (aluminum). When the dissimilar metals are bonded to Au and Al in this manner, voids are generated at the joint interface to lower the joint strength. Moreover, since expensive Au is used, there is also a problem that the manufacturing cost of a semiconductor device becomes high.

因此近年來,以與半導體晶片的墊電極同原料,且比Au廉價的Al當作金屬線的材料使用被提出。Therefore, in recent years, use of a material which is the same as a pad electrode of a semiconductor wafer and which is cheaper than Au is used as a metal wire has been proposed.

但是,Al與Au比較強度低。因此,後述的第一銲程序後,有在金屬線的折彎部分容易產生裂痕的問題。而且,Al與Au比較容易氧化,由於形成於表面的氧化膜而使與電極的接合容易被阻礙。因此,也有得到充分的接合強度不容易之問題。However, Al has a lower strength than Au. Therefore, after the first welding procedure described later, there is a problem that cracks are likely to occur in the bent portion of the metal wire. Further, Al is more likely to be oxidized than Au, and the bonding to the electrode is easily hindered by the oxide film formed on the surface. Therefore, there is also a problem that sufficient joint strength is not easy.

因此,在與本實施形態有關的銲針1中,藉由在緊壓面30與錐形孔20的邊界部分設置倒角部,抑制裂痕之產生於金屬線的折彎部分。而且,在與本實施形態有關的銲針1中,藉由在上述倒角部設置微細的凹凸形狀,使緊壓面30振動而提高將金屬線塗在電極時的對金屬線的抓緊力,據此提高接合強度。Therefore, in the welding pin 1 according to the present embodiment, the chamfered portion is provided at the boundary portion between the pressing surface 30 and the tapered hole 20, and the occurrence of cracks in the bent portion of the wire is suppressed. Further, in the welding pin 1 according to the present embodiment, by providing a fine uneven shape on the chamfered portion, the pressing surface 30 is vibrated to improve the gripping force on the metal wire when the metal wire is applied to the electrode. Thereby the joint strength is increased.

另一方面,在僅設置凹凸形狀下有因凹凸形狀中的凸部的尖銳而使金屬線損傷之虞,由於金屬線損傷而有在金屬線容易產生裂痕之虞。因此,在與本實施形態有關的銲針1中,使上述凹凸形狀中的凸部的尖銳度比凹部的尖銳度小。據此,可抑制起因於凹凸形狀的裂痕的產生。此外,[尖銳度]是意味著凸部及凹部的尖銳的程度。因此,[使凸部的尖銳度比凹部的尖銳度小]是意味著使凸部的尖銳比凹部的尖銳平緩。On the other hand, in the case where only the uneven shape is provided, the metal wire is damaged due to the sharpness of the convex portion in the uneven shape, and the metal wire is likely to be cracked due to the damage of the metal wire. Therefore, in the welding pin 1 according to the present embodiment, the sharpness of the convex portion in the uneven shape is made smaller than the sharpness of the concave portion. According to this, it is possible to suppress the occurrence of cracks due to the uneven shape. Further, [sharpness] means the degree of sharpness of the convex portion and the concave portion. Therefore, [making the sharpness of the convex portion smaller than the sharpness of the concave portion] means that the sharpness of the convex portion is sharper than the sharpness of the concave portion.

在以下中,就形成於緊壓面30與錐形孔20的邊界部分的倒角部及形成於倒角部的表面的凹凸形狀的構成參照圖3及圖4具體地說明。圖3是顯示瓶頸部14的頂端部分之模式側剖面圖。而且,圖4是圖3所示的H2部之模式放大視圖。Hereinafter, the configuration of the chamfered portion formed at the boundary portion between the pressing surface 30 and the tapered hole 20 and the uneven shape formed on the surface of the chamfered portion will be specifically described with reference to FIGS. 3 and 4 . 3 is a schematic side cross-sectional view showing a tip end portion of the neck portion 14. 4 is a schematic enlarged view of the H2 portion shown in FIG. 3.

如圖3所示,緊壓面30形成自外緣部朝中央部稍微隆起的凸面狀。而且,錐形孔20形成於緊壓面30的中央部。因此在銲針1中,錐形孔20與緊壓面30的邊界部分為最突出於頂端側的部分,在該部分中在金屬線容易產生裂痕。As shown in FIG. 3, the pressing surface 30 is formed in a convex shape which is slightly raised from the outer edge portion toward the central portion. Further, a tapered hole 20 is formed in a central portion of the pressing surface 30. Therefore, in the welding pin 1, the boundary portion between the tapered hole 20 and the pressing surface 30 is the portion which most protrudes from the tip end side, in which the metal wire is liable to be cracked.

倒角部40設於錐形孔20與緊壓面30的邊界部分。如圖4所示,倒角部40具有由錐形孔20到緊壓面30平滑連續的曲面。The chamfered portion 40 is provided at a boundary portion between the tapered hole 20 and the pressing surface 30. As shown in FIG. 4, the chamfered portion 40 has a curved surface that is smoothly continuous from the tapered hole 20 to the pressing surface 30.

圖5是顯示緊壓面30的表面形狀之模式側剖面圖。而且,圖6是顯示倒角部40的表面形狀之模式側剖面圖。如圖5及圖6所示,在緊壓面30及倒角部40於表面形成有微細的凹凸形狀。該等凹凸形狀都是凸部31、41的尖銳度比凹部32、42的尖銳度小而形成。Fig. 5 is a schematic side sectional view showing the surface shape of the pressing surface 30. Moreover, FIG. 6 is a schematic side cross-sectional view showing the surface shape of the chamfered portion 40. As shown in FIGS. 5 and 6, the pressing surface 30 and the chamfered portion 40 are formed with a fine uneven shape on the surface. These uneven shapes are formed such that the sharpness of the convex portions 31 and 41 is smaller than the sharpness of the concave portions 32 and 42.

而且,圖5所示的緊壓面30的凹凸形狀其凸部31的尖銳度比圖6所示的倒角部40的凹凸形狀中的凸部41的尖銳度大而形成。據此,在與本實施形態有關的銲針1中,可使緊壓面30之對金屬線的抓緊力比倒角部40之對金屬線的抓緊力還提高。Further, the uneven shape of the pressing surface 30 shown in FIG. 5 is formed such that the sharpness of the convex portion 31 is larger than the sharpness of the convex portion 41 in the uneven shape of the chamfered portion 40 shown in FIG. 6 . According to this, in the welding pin 1 according to the present embodiment, the gripping force of the pressing wire 30 against the wire can be improved more than the gripping force of the opposing wire of the chamfering portion 40.

其次,就上述的構成的作用與打線接合的動作一起參照圖7及圖8進行說明。圖7是顯示第一銲程序的樣子之模式側剖面圖。而且,圖8是顯示第二銲程序的樣子之模式側剖面圖。Next, the action of the above configuration will be described with reference to FIGS. 7 and 8 together with the operation of the wire bonding. Fig. 7 is a schematic side sectional view showing the state of the first welding procedure. Moreover, Fig. 8 is a schematic side sectional view showing the state of the second welding program.

打線接合包含第一銲程序、線弧(loop)形成程序及第二銲程序。第一銲程序是將金屬線接合於一方的電極之程序。線弧形成程序是在第一銲程序後,藉由以規定的軌道使銲針1移動,在電極間形成金屬線的線弧之程序。第二銲程序是在線弧形成程序後,將金屬線接合於另一方的電極之程序。藉由該等程序,在電極間架設有金屬線,使半導體晶片與導線架電性連接。The wire bonding includes a first welding process, a loop forming process, and a second welding process. The first welding procedure is a procedure for joining metal wires to one of the electrodes. The line arc forming program is a program for forming a line arc of a metal line between electrodes by moving the welding pin 1 in a predetermined orbit after the first welding procedure. The second welding procedure is a procedure in which the wire is joined to the other electrode after the in-line arc forming process. By these procedures, a metal wire is placed between the electrodes to electrically connect the semiconductor wafer to the lead frame.

在圖7顯示取代習知的Au製的金屬線(以下記載為[Au金屬線]),使用Al製的金屬線(以下記載為[Al金屬線])進行打線接合的情形下的第一銲程序的樣子。FIG. 7 shows a first welding in the case where wire bonding is performed by using a metal wire made of Au (hereinafter referred to as [Au metal wire]) and using a metal wire made of Al (hereinafter referred to as [Al metal wire]). The look of the program.

此處,在使用習知的Au金屬線的打線接合中,第一銲程序係進行球形接合(ball bonding)。球形接合是藉由放電使金屬線的頂端熔融形成Au的球(ball),藉由使該球熱壓接合(thermocompression bonding)於電極將金屬線與電極接合的方法。在球形接合使用銲針。Here, in the wire bonding using the conventional Au metal wire, the first welding process performs ball bonding. The spherical bonding is a method in which a tip of a metal wire is melted by discharge to form a ball of Au, and a metal wire is bonded to the electrode by thermocompression bonding the electrode to the electrode. A soldering pin is used for the ball joint.

另一方面,當使用Al金屬線進行打線接合時,進行上述的球形接合很困難。此乃因Al與Au比較容易氧化,很難像Au般形成球。因此,在使用Al金屬線進行打線接合的情形下,一般使用不會形成球而將金屬線接合於電極的楔形接合工具(wedge bonding tool)(例如參照日本國特開2001-156100號公報)。On the other hand, when the wire bonding is performed using an Al metal wire, it is difficult to perform the above-described spherical bonding. This is because Al and Au are more susceptible to oxidation and it is difficult to form a ball like Au. Therefore, in the case of wire bonding using an Al metal wire, a wedge bonding tool in which a metal wire is bonded to an electrode without forming a ball is generally used (for example, refer to Japanese Laid-Open Patent Publication No. 2001-156100).

但是,因楔形接合工具與銲針比較構造複雜故昂貴且耐久性也低。因此,在本實施形態中擬使用與楔形接合工具比較廉價且耐久性也高的銲針之銲針1進行利用Al金屬線的打線接合。據此,可提高半導體元件的生產性。However, since the wedge bonding tool is complicated in structure compared with the welding pin, it is expensive and has low durability. Therefore, in the present embodiment, it is intended to perform wire bonding using an Al metal wire using a welding pin 1 of a welding pin which is relatively inexpensive and has high durability as a wedge bonding tool. According to this, the productivity of the semiconductor element can be improved.

如圖7所示,銲針1首先使用緊壓面30將Al金屬線W按壓於一方的電極,例如導線架的導線電極(lead electrode)100。此時,在倒角部40與導線電極100之間設置有規定的間隔,以使在倒角部40與導線電極100之間Al金屬線W不被切斷。As shown in FIG. 7, the welding pin 1 first presses the Al metal wire W to one of the electrodes, such as the lead electrode 100 of the lead frame, using the pressing surface 30. At this time, a predetermined interval is provided between the chamfered portion 40 and the wire electrode 100 so that the Al metal wire W is not cut between the chamfered portion 40 and the wire electrode 100.

接著,銲針1的圓筒部12(參照圖1)被施壓超音波。據此,緊壓面30振動Al金屬線W被塗在導線電極100。據此,Al金屬線W被接合於導線電極100。Next, the cylindrical portion 12 (see FIG. 1) of the welding pin 1 is pressed with ultrasonic waves. According to this, the pressing surface 30 vibrates the Al metal wire W to be applied to the wire electrode 100. According to this, the Al metal wire W is bonded to the wire electrode 100.

接著,藉由銲針1一邊描繪規定的軌道一邊移動,形成金屬線的線弧。此時,在接合於Al金屬線W的導線電極100的部分與未被接合的部分的交界處,例如圖7所示的區域B形成有折彎部分。裂痕在該折彎部分中容易產生。Next, the welding pin 1 moves while drawing a predetermined track to form a line arc of the metal wire. At this time, a bent portion is formed at a boundary between a portion of the wire electrode 100 bonded to the Al metal wire W and a portion not joined, for example, the region B shown in FIG. Cracks are easily generated in the bent portion.

對於此點的對策係在與本實施形態有關的銲針1中,在錐形孔20與緊壓面30的邊界部分設置有倒角部40。據此,與未設置有倒角部40的情形比較,應力集中於區域B被緩和,故可抑制在Al金屬線W的折彎部分產生裂痕。In this case, in the welding pin 1 according to the present embodiment, the chamfered portion 40 is provided at a boundary portion between the tapered hole 20 and the pressing surface 30. According to this, the stress concentration in the region B is moderated as compared with the case where the chamfered portion 40 is not provided, and it is possible to suppress the occurrence of cracks in the bent portion of the Al metal wire W.

而且如上述,因Al金屬線W由於形成於表面的氧化膜而使與電極的接合容易被阻礙,故也有不容易得到比Au金屬線還充分的接合強度之問題。Further, as described above, since the Al metal wire W is easily prevented from being bonded to the electrode by the oxide film formed on the surface, it is difficult to obtain a sufficient bonding strength than the Au metal wire.

對於此點的對策係在與本實施形態有關的銲針1中,擬在倒角部40的表面設置微細的凹凸形狀。據此,倒角部40之對Al金屬線W的抓緊力提高,因此即使是使用與Au金屬線比較難以得到接合強度的Al金屬線W的情形,也能得到充分的接合強度。In this case, in the welding pin 1 according to the present embodiment, it is intended to provide a fine uneven shape on the surface of the chamfered portion 40. As a result, the gripping force of the chamfered portion 40 against the Al metal wire W is improved. Therefore, even when the Al metal wire W having difficulty in obtaining joint strength is used as compared with the Au metal wire, sufficient joint strength can be obtained.

而且,倒角部40的凹凸形狀為凸部41的尖銳度比凹部42的尖銳度小而形成。因此,依照與本實施形態有關的銲針1,可抑制起因於凹凸形狀的裂痕的產生,同時可得到高的接合強度。Further, the concavo-convex shape of the chamfered portion 40 is formed such that the sharpness of the convex portion 41 is smaller than the sharpness of the concave portion 42. Therefore, according to the welding pin 1 according to the present embodiment, it is possible to suppress the occurrence of cracks due to the uneven shape and to obtain high joint strength.

而且,在與本實施形態有關的銲針1中,也擬在緊壓面30設置微細的凹凸形狀。緊壓面30與倒角部40比較很難在Al金屬線W產生裂痕。因此,由重視抓緊力的提高而不是重視防止裂痕的產生的觀點,緊壓面30的凹凸形狀其凸部31的尖銳度比倒角部40的凹凸形狀中的凸部41的尖銳度大而形成(參照圖5及圖6)。據此,可更提高對Al金屬線W的抓緊力。Further, in the welding pin 1 according to the present embodiment, it is also intended to provide a fine uneven shape on the pressing surface 30. It is difficult for the pressing surface 30 to cause cracks in the Al metal wire W as compared with the chamfered portion 40. Therefore, from the viewpoint of paying attention to the improvement of the gripping force rather than the prevention of the occurrence of cracks, the uneven shape of the pressing surface 30 has a sharpness of the convex portion 31 larger than the sharpness of the convex portion 41 in the uneven shape of the chamfered portion 40. Formed (see Figures 5 and 6). According to this, the gripping force to the Al metal wire W can be further improved.

接著,銲針1進行第二銲程序。首先,銲針1如圖8所示,使用緊壓面30將Al金屬線W按壓於另一方的電極,例如半導體晶片的墊電極200。在第二銲程序中,在將Al金屬線W接合於墊電極200後,需切斷Al金屬線W。因此,倒角部40與墊電極200的間隔設定為比第一銲程序時短。Next, the welding pin 1 performs a second welding process. First, as shown in FIG. 8, the welding pin 1 presses the Al metal wire W to the other electrode, for example, the pad electrode 200 of the semiconductor wafer, using the pressing surface 30. In the second soldering process, after the Al metal wire W is bonded to the pad electrode 200, the Al metal wire W needs to be cut. Therefore, the interval between the chamfered portion 40 and the pad electrode 200 is set to be shorter than that in the first welding procedure.

接著,銲針1藉由超音波使緊壓面30振動而將Al金屬線W塗在墊電極200。據此,Al金屬線W被接合於墊電極200。Next, the welding pin 1 vibrates the pressing surface 30 by ultrasonic waves to apply the Al metal wire W to the pad electrode 200. According to this, the Al metal wire W is bonded to the pad electrode 200.

接著,銲針1僅上升規定距離。此時Al金屬線W如圖8所示,不僅在比倒角部40還外側的縫接部分S,在比倒角部40還內側的尾部部分T中也成為被接合於墊電極200的狀態。因此,銲針1一上升,伴隨該上升Al金屬線W就會被由銲針1引出。所引出的Al金屬線W成為在下次的第一銲程序中被接合於導線電極100的部分。Then, the welding pin 1 is raised only by a predetermined distance. As shown in FIG. 8, the Al metal wire W is also joined to the pad electrode 200 in the tail portion T on the inner side of the chamfered portion 40, not only in the seam portion S outside the chamfered portion 40 but also in the slit portion S outside the chamfered portion 40. . Therefore, as the welding pin 1 rises, the rising Al metal wire W is drawn by the welding pin 1. The drawn Al metal wire W is a portion joined to the wire electrode 100 in the next first welding process.

然後,藉由例如銲針1左右移動,使Al金屬線W在縫接部分S與尾部部分T之間被切斷。Then, the Al metal wire W is cut between the sewing portion S and the tail portion T by, for example, the welding needle 1 moving left and right.

如此,在第二銲程序中為了由銲針1引出Al金屬線W,需在尾部部分T中將Al金屬線W暫時地接合於墊電極200。但是如上述,因在Al金屬線W容易形成有氧化膜,故不容易確保尾部部分T的接合強度。Thus, in order to extract the Al metal wire W from the welding pin 1 in the second welding process, the Al metal wire W needs to be temporarily joined to the pad electrode 200 in the tail portion T. However, as described above, since the oxide film is easily formed on the Al metal wire W, it is not easy to secure the bonding strength of the tail portion T.

相對於此,在與本實施形態有關的銲針1中,藉由在倒角部40設置微細的凹凸形狀,可提高倒角部40之對Al金屬線W的抓緊力,因此在尾部部分T中也能得到充分的接合強度。On the other hand, in the welding pin 1 according to the present embodiment, by providing the fine concavo-convex shape in the chamfered portion 40, the gripping force on the Al metal wire W of the chamfered portion 40 can be increased, so that the tail portion T is A good joint strength can also be obtained.

如上述,與本實施形態有關的銲針1包含:緊壓面30、插通孔11、錐形孔20、倒角部40。緊壓面30為將銲線緊壓的面。插通孔11為插通有上述銲線的孔。錐形孔20為連接插通孔11與緊壓面30的孔,具有朝緊壓面30擴展的形狀。倒角部40設置於錐形孔20與緊壓面30之間。倒角部40在表面具有凹凸形狀,且凹凸形狀中的凸部41的尖銳度比凹凸形狀中的凹部42的尖銳度小。As described above, the welding pin 1 according to the present embodiment includes the pressing surface 30, the insertion hole 11, the tapered hole 20, and the chamfered portion 40. The pressing surface 30 is a surface that presses the bonding wire. The insertion hole 11 is a hole through which the above-mentioned bonding wire is inserted. The tapered hole 20 is a hole that connects the insertion hole 11 and the pressing surface 30, and has a shape that expands toward the pressing surface 30. The chamfered portion 40 is disposed between the tapered hole 20 and the pressing surface 30. The chamfered portion 40 has a concavo-convex shape on the surface, and the sharpness of the convex portion 41 in the concavo-convex shape is smaller than the sharpness of the concave portion 42 in the concavo-convex shape.

因此,依照與本實施形態有關的銲針1,可抑制裂痕之產生於銲線,同時可提高接合強度。Therefore, according to the welding pin 1 according to the present embodiment, it is possible to suppress the occurrence of cracks in the bonding wire and to improve the bonding strength.

(實施例) 其次,就與本實施形態有關的銲針1的實施例參照圖9~圖11進行說明。圖9是舉例說明倒角部的表面的粗糙度曲線之圖表。圖10是顯示分別使倒角部40中的凹凸形狀的偏斜度及平均高度以及緊壓面30中的凹凸形狀的平均高度變化的情形的評價結果之圖。而且,圖11是顯示使倒角部40的曲率半徑變化的情形的評價結果之圖。(Embodiment) Next, an embodiment of the welding pin 1 according to the present embodiment will be described with reference to Figs. 9 to 11 . Fig. 9 is a graph illustrating a roughness curve of the surface of the chamfered portion. FIG. 10 is a view showing evaluation results of a case where the skewness and the average height of the uneven shape in the chamfered portion 40 and the average height of the uneven shape in the pressed surface 30 are changed. Moreover, FIG. 11 is a view showing an evaluation result of a case where the radius of curvature of the chamfered portion 40 is changed.

緊壓面30及倒角部40的凹凸形狀以例如平均高度Rc及偏斜度Rsk表示。平均高度Rc及偏斜度Rsk是根據JIS B 0601-2001算出。The uneven shape of the pressing surface 30 and the chamfered portion 40 is expressed by, for example, an average height Rc and a skewness Rsk. The average height Rc and the skewness Rsk are calculated in accordance with JIS B 0601-2001.

偏斜度Rsk是表示凹凸形狀中的凸部與凹部的對稱性的值。若凹凸形狀為對稱的,則偏斜度Rsk成為0。而且,當偏斜度Rsk為負時,凹凸形狀中的凸部的尖銳度比凹部的尖銳度小,換言之,意味著以平面視看凹凸形狀的情形下的凸部的頂端部分的面積比凹部的底部分的面積大。The skewness Rsk is a value indicating the symmetry of the convex portion and the concave portion in the uneven shape. If the uneven shape is symmetrical, the skewness Rsk becomes zero. Further, when the skewness Rsk is negative, the sharpness of the convex portion in the uneven shape is smaller than the sharpness of the concave portion, in other words, the area of the tip end portion of the convex portion in the case where the uneven shape is viewed in a plan view is larger than the concave portion The bottom portion has a large area.

在本實施形態中,使用雷射顯微鏡(laser microscope)(OLYMPUS公司製、OLS4000)測定了緊壓面30及倒角部40的粗糙度曲線。測定條件如下所示: 測定倍率:50倍 評價長度(粗糙度測定):500μm~800μm 截取(cutoff)(相位補償形高通濾波器)λc:25μmIn the present embodiment, the roughness curves of the pressing surface 30 and the chamfered portion 40 were measured using a laser microscope (OLS4000, manufactured by OLYMPUS). The measurement conditions are as follows: Measurement magnification: 50 times Evaluation length (roughness measurement): 500 μm to 800 μm Cutoff (phase compensation type high-pass filter) λc: 25 μm

由藉由上述的條件測定的粗糙度曲線,藉由以下的式(1)求平均高度Rc,藉由以下的式(2)求偏斜度Rsk。From the roughness curve measured by the above conditions, the average height Rc is obtained by the following formula (1), and the skewness Rsk is obtained by the following formula (2).

公式(1) Formula 1)

公式(2) Formula (2)

此處在式(1)中,m為輪廓曲線要素的數目,Zti為輪廓曲線要素的高度的平均值。而且在式(2)中,Zq為均方根高度,Zn為粗糙度曲線中的高度的值。Here, in the formula (1), m is the number of contour curve elements, and Zti is the average value of the heights of the contour curve elements. Further, in the formula (2), Zq is a root mean square height, and Zn is a value of a height in the roughness curve.

以雷射顯微鏡測定倒角部40的表面得到的粗糙度曲線的一例如圖9所示。在圖9中,縱軸表示高度(微米:μm),橫軸表示測定位置(μm)。在圖9所示的粗糙度曲線中,倒角部40的凹凸形狀的偏斜度Rsk為-0.164,倒角部40的凹凸形狀的平均高度Rc為0.073。An example of the roughness curve obtained by measuring the surface of the chamfered portion 40 by a laser microscope is shown in Fig. 9 . In Fig. 9, the vertical axis represents the height (micrometer: μm), and the horizontal axis represents the measurement position (μm). In the roughness curve shown in FIG. 9, the skewness Rsk of the uneven shape of the chamfered portion 40 is -0.164, and the average height Rc of the uneven shape of the chamfered portion 40 is 0.073.

在圖10顯示分別使倒角部40的偏斜度Rsk及平均高度Rc以及緊壓面30的平均高度Rc變化的情形下的[裂痕]、[尾部接合]及[縫接接合]的各項目的評價結果。FIG. 10 shows items of [crack], [tail joint], and [sewing joint] in the case where the skewness Rsk and the average height Rc of the chamfered portion 40 and the average height Rc of the pressing surface 30 are changed, respectively. Evaluation results.

此處,[裂痕]項目是表示在第一銲程序後在Al金屬線W是否產生裂痕的項目。在該[裂痕]項目中設不產生裂痕的情形為[○]。而且,[尾部接合]項目及[縫接接合]項目是表示第二銲程序後,在圖8所示的尾部部分T及縫接部分S中是否得到充分的接合強度之項目。在該等[尾部接合]項目及[縫接接合]項目中,設得到充分的接合強度的情形為[○]。Here, the [crack] item is an item indicating whether or not a crack has occurred in the Al metal wire W after the first welding procedure. The case where no crack is generated in the [crack] item is [○]. Further, the [tail joint] item and the [stitch joint] item are items indicating whether or not sufficient joint strength is obtained in the tail portion T and the seam portion S shown in Fig. 8 after the second welding program. In the [tail joint] item and the [stitch joint] item, the case where sufficient joint strength is obtained is [○].

如圖10所示,在比較例1及2中,在第二銲程序後的尾部部分T及縫接部分S中無法得到充分的接合強度。而且,在比較例3~6中,在第一銲程序後的Al金屬線W產生了裂痕。As shown in FIG. 10, in Comparative Examples 1 and 2, sufficient joint strength could not be obtained in the tail portion T and the seam portion S after the second welding procedure. Further, in Comparative Examples 3 to 6, cracks occurred in the Al metal wire W after the first welding process.

另一方面,在實施例1~5中,在第一銲程序後的Al金屬線W不產生裂痕,且在第二銲程序後的尾部部分T及縫接部分S中得到了充分的接合強度。On the other hand, in the first to fifth embodiments, the Al metal wire W after the first welding process was not cracked, and sufficient joint strength was obtained in the tail portion T and the seam portion S after the second welding process. .

由該結果,倒角部40中的凹凸形狀為偏斜度Rsk為-0.164以下,且平均高度Rc為0.035μm以上0.092μm以下較佳。而且,緊壓面30中的凹凸形狀的平均高度Rc為0.113μm以上較佳。As a result, the uneven shape in the chamfered portion 40 has a skewness Rsk of -0.164 or less, and an average height Rc of preferably 0.035 μm or more and 0.092 μm or less. Further, the average height Rc of the uneven shape in the pressing surface 30 is preferably 0.113 μm or more.

在使倒角部40中的凹凸形狀的偏斜度Rsk為未滿-1.4的情形下,使倒角部40的平均高度Rc為例如0.035μm以上在加工原理上很困難。因此,在倒角部40中的凹凸形狀的偏斜度Rsk中-1.4以上較佳。When the skewness Rsk of the uneven shape in the chamfered portion 40 is less than -1.4, the average height Rc of the chamfered portion 40 is, for example, 0.035 μm or more, which is difficult in the processing principle. Therefore, it is preferable that the skewness Rsk of the uneven shape in the chamfered portion 40 is -1.4 or more.

緊壓面30中的凹凸形狀的平均高度Rc能以4.642μm以下。若緊壓面30中的凹凸形狀的平均高度Rc比4.642μm高,則在倒角部40的形成後,平均高度Rc為0.092μm以上的凹凸形狀往往會留在倒角部40。因此,緊壓面30中的凹凸形狀的平均高度Rc為4.642μm以下較佳。此外,緊壓面30中的凹凸形狀的平均高度Rc 4.642μm是藉由將倒角部40的曲率半徑的下限值4.55μm(參照圖11)與倒角部40中的凹凸形狀的平均高度Rc的上限值0.092μm(參照圖10)相加而導出。The average height Rc of the concavo-convex shape in the pressing surface 30 can be 4.462 μm or less. When the average height Rc of the uneven shape in the pressing surface 30 is higher than 4.642 μm, the uneven shape having an average height Rc of 0.092 μm or more after the chamfered portion 40 is formed tends to remain in the chamfered portion 40. Therefore, the average height Rc of the uneven shape in the pressing surface 30 is preferably 4.642 μm or less. Further, the average height Rc 4.642 μm of the concavo-convex shape in the pressing surface 30 is the average height of the concavo-convex shape in the chamfered portion 40 by the lower limit value of the radius of curvature of the chamfered portion 40 of 4.55 μm (refer to FIG. 11). The upper limit value of Rc is 0.092 μm (see Fig. 10) and is added.

緊壓面30中的凹凸形狀例如藉由噴砂加工而形成。當緊壓面30中的凹凸形狀藉由噴砂加工形成時,可使緊壓面30的凹凸形狀的平均高度Rc為0.45μm。當緊壓面30的凹凸形狀的平均高度Rc超過0.45μm而形成時,例如表面的陶瓷粒子往往會損失(粒子脫落)。因此,緊壓面30中的凹凸形狀的平均高度Rc為0.45μm以下更佳。The concavo-convex shape in the pressing surface 30 is formed, for example, by sandblasting. When the concavo-convex shape in the pressing surface 30 is formed by sandblasting, the average height Rc of the concavo-convex shape of the pressing surface 30 can be made 0.45 μm. When the average height Rc of the concavo-convex shape of the pressing surface 30 is more than 0.45 μm, for example, ceramic particles on the surface tend to be lost (particle falling off). Therefore, the average height Rc of the uneven shape in the pressing surface 30 is preferably 0.45 μm or less.

在圖11顯示使倒角部40的曲率半徑變化的情形下的[裂痕]及[金屬線切斷不良]的各項目的評價結果。FIG. 11 shows the evaluation results of the respective items of [crack] and [metal wire cutting failure] in the case where the radius of curvature of the chamfered portion 40 is changed.

此處[裂痕]項目是與圖10所示的[裂痕]項目一樣的項目。而且,[金屬線切斷不良]項目是表示在第二銲程序後Al金屬線W是否被適切地切斷的項目。在該[金屬線切斷不良]項目中,設不產生Al金屬線W的切斷不良的情形為[○]。Here, the [crack] item is the same item as the [crack] item shown in FIG. Further, the [metal wire cutting failure] item is an item indicating whether or not the Al metal wire W is appropriately cut after the second welding process. In the [metal wire cutting failure] item, the case where the cutting failure of the Al metal wire W does not occur is [○].

如圖11所示,在比較例7及8中,在第一銲程序後的Al金屬線W產生了裂痕。而且,在比較例9中,在第二銲程序後產生了Al金屬線W的切斷不良。As shown in FIG. 11, in Comparative Examples 7 and 8, the Al metal wire W after the first welding process was cracked. Further, in Comparative Example 9, the cutting failure of the Al metal wire W occurred after the second welding process.

另一方面,在實施例6~10中,在第一銲程序後的Al金屬線W不產生裂痕,且在第二銲程序後也不產生Al金屬線W的切斷不良。On the other hand, in Examples 6 to 10, the Al metal wire W after the first welding process was not cracked, and the cutting failure of the Al metal wire W did not occur after the second welding process.

由該結果,倒角部40的曲率半徑為4.55μm以上20.3μm以下較佳。From this result, the radius of curvature of the chamfered portion 40 is preferably 4.55 μm or more and 20.3 μm or less.

圖12是顯示使倒角部40的曲率半徑變化的情形下的[裂痕]項目的評價結果之圖。 就第一銲的接合點(例如導線電極100上的點)與第二銲的接合點(例如墊電極200上的點)的線弧長度為3mm以上的情形進行了評價。此處線弧長度為連結兩接合部的中心線的假想線的長度。如此在線弧長度較長的封裝等中,在線弧形成程序中施加於Al金屬線W的張力變大,裂痕變得更容易產生。FIG. 12 is a view showing an evaluation result of the [crack] item in a case where the radius of curvature of the chamfered portion 40 is changed. The case where the line arc length of the joint of the first welding (for example, the point on the wire electrode 100) and the joint of the second welding (for example, the point on the pad electrode 200) is 3 mm or more is evaluated. Here, the length of the line arc is the length of the imaginary line connecting the center lines of the two joint portions. In such a package having a long arc length, the tension applied to the Al metal wire W in the in-line arc forming process becomes large, and the crack becomes more likely to occur.

在圖12中[裂痕]項目是與圖10、圖11所示的[裂痕]項目一樣的項目。The [crack] item in Fig. 12 is the same item as the [crack] item shown in Figs. 10 and 11 .

如圖12所示,在比較例10中在第一銲程序後的Al金屬線W產生了裂痕。 另一方面,在實施例11~13中在第一銲程序後的Al金屬線W不產生裂痕。 由該結果,倒角部40的曲率半徑以12.8μm以上20.3μm以下較佳。 據此,即使第一銲的接合點與第二銲的接合點的線弧長度為3mm以上,也可適宜地抑制裂痕之產生於Al金屬線W。而且,可適宜地抑制第二銲程序後的銲線的切斷不良的發生。As shown in FIG. 12, in Comparative Example 10, cracks occurred in the Al metal wire W after the first welding process. On the other hand, in Examples 11 to 13, the Al metal wires W after the first soldering process did not cause cracks. From this result, the radius of curvature of the chamfered portion 40 is preferably 12.8 μm or more and 20.3 μm or less. According to this, even if the line arc length of the joint of the first welding and the second welding is 3 mm or more, the occurrence of cracks in the Al metal wire W can be suitably suppressed. Further, it is possible to suitably suppress the occurrence of the cutting failure of the bonding wire after the second welding process.

圖13是顯示使錐形孔20的錐角θ1(參照圖3)變化的情形下的[裂痕]項目的評價結果之圖。 藉由錐角θ1規定插通孔11與錐形孔20的邊界角部50的角度θ2。若錐角θ1相對大,則邊界角部50的角度θ2相對變小。因此,若錐角θ1過大,則例如在Al金屬線W中抵接邊界角部50的部分產生裂痕。FIG. 13 is a view showing an evaluation result of the [crack] item in a case where the taper angle θ1 (see FIG. 3) of the tapered hole 20 is changed. The angle θ2 of the boundary corner portion 50 of the insertion hole 11 and the tapered hole 20 is defined by the taper angle θ1. When the taper angle θ1 is relatively large, the angle θ2 of the boundary corner portion 50 is relatively small. Therefore, if the taper angle θ1 is too large, for example, a crack is generated in a portion of the Al metal wire W that abuts against the boundary corner portion 50.

在圖13中[裂痕]項目是表示在第一銲程序後的Al金屬線W中在抵接邊界角部50的部分是否產生裂痕的項目。在該[裂痕]項目中,設不產生裂痕的情形為[○]。In Fig. 13, the [crack] item is an item indicating whether or not a crack is generated in the portion of the Al metal wire W after the first welding process that abuts the boundary corner portion 50. In the [crack] item, the case where no crack is generated is [○].

如圖13所示,在比較例11及12中,由於錐形孔20的錐角θ1過大,因此在第一銲程序後的Al金屬線W產生了裂痕。 另一方面,在實施例14及15中在第一銲程序後的Al金屬線W不產生裂痕。 由該結果,錐形孔20的錐角θ1以100°以下較佳。 據此,可適宜地抑制裂痕之產生於Al金屬線W。As shown in FIG. 13, in Comparative Examples 11 and 12, since the taper angle θ1 of the tapered hole 20 was excessively large, cracks occurred in the Al metal wire W after the first welding procedure. On the other hand, in Examples 14 and 15, the Al metal wire W after the first welding process was not cracked. From this result, the taper angle θ1 of the tapered hole 20 is preferably 100 or less. According to this, it is possible to suitably suppress the occurrence of cracks in the Al metal wire W.

錐形孔20的錐角θ1以0°以上較佳。若使倒角部40的曲率半徑為規定的值(例如4.55μm以上20.3μm以下,或12.8μm以上20.3μm以下),則即使是錐形孔20的錐角θ1為0°或接近0°的情形,也抑制在Al金屬線W中在抵接倒角部40的部分產生裂痕。The taper angle θ1 of the tapered hole 20 is preferably 0° or more. When the radius of curvature of the chamfered portion 40 is a predetermined value (for example, 4.55 μm or more and 20.3 μm or less, or 12.8 μm or more and 20.3 μm or less), even if the taper angle θ1 of the tapered hole 20 is 0° or close to 0°. In other cases, it is also suppressed that cracks are generated in the portion of the Al metal wire W that abuts against the chamfered portion 40.

在接合時,在Al金屬線W與導線電極100的邊界面(以下僅稱為[邊界面])產生用以接合Al金屬線W與導線電極100的能量。能量分布(energy distribution)影響接合強度。At the time of bonding, energy for bonding the Al metal wire W and the wire electrode 100 is generated at the boundary surface of the Al metal wire W and the wire electrode 100 (hereinafter simply referred to as [boundary surface]). The energy distribution affects the joint strength.

圖14是顯示接合時的模擬的結果的一例之模式的斜視圖。 圖15是顯示在接合時能量分布的模擬結果的一例之模式的俯視圖。 圖16是顯示使線徑Dw與緊壓面外徑Dp變化的情形下的[接合強度]項目的評價結果之圖。 圖14是由斜下方看接合部之圖。在圖14所示的例子中,邊界面為略橢圓形。在圖14藉由模擬求得的能量分布被以等高線顯示於邊界面上。FIG. 14 is a perspective view showing a mode of an example of a result of simulation at the time of joining. Fig. 15 is a plan view showing an example of a simulation result of energy distribution at the time of joining. FIG. 16 is a view showing evaluation results of the [joint strength] item in the case where the wire diameter Dw and the outer diameter Dp of the pressing surface are changed. Fig. 14 is a view of the joint portion as seen obliquely from below. In the example shown in Fig. 14, the boundary surface is slightly elliptical. The energy distribution obtained by the simulation in Fig. 14 is displayed on the boundary surface as a contour line.

例如藉由使緊壓面外徑Dp(參照圖3)與線徑Dw(參照圖7及圖8)的比率Rd(=Dp/Dw)變化而使能量分布變化。此處,緊壓面外徑Dp是指如圖3所示,使瓶頸部14的外周部的延長面與包含錐形孔20的端部的平面交叉而產生的假想圓(imaginary circle)Cr的直徑。For example, the energy distribution is changed by changing the ratio Rd (= Dp/Dw) of the pressing surface outer diameter Dp (see FIG. 3) to the wire diameter Dw (see FIGS. 7 and 8). Here, the pressing surface outer diameter Dp is an imaginary circle Cr which is formed by intersecting the extended surface of the outer peripheral portion of the neck portion 14 with the plane of the end portion including the tapered hole 20 as shown in FIG. 3 . diameter.

在圖15(a)顯示有線徑Dw與緊壓面外徑Dp之間的比率Rd為未滿6倍的情形的模擬結果。在圖15(b)顯示有線徑Dw與緊壓面外徑Dp之間的比率Rd為6倍以上的情形的模擬結果。 在圖15(a)及圖15(b)圖示有能量分布的一半。Fig. 15(a) shows a simulation result in a case where the ratio Rd between the wire diameter Dw and the outer diameter Dp of the pressing surface is less than 6 times. Fig. 15(b) shows a simulation result in a case where the ratio Rd between the wire diameter Dw and the outer diameter Dp of the pressing surface is 6 times or more. 15 (a) and 15 (b) show half of the energy distribution.

圖16的[縫接接合]項目是表示第二銲程序後在圖8所示的縫接部分S中是否得到充分的接合強度的項目。在[縫接接合]項目中,設得到充分的接合強度的情形為[○]。使用於本評價的檢體(specimen)的緊壓面30中的凹凸形狀的平均高度Rc為0.20μm以上0.23μm以下。The [sewing joint] item of Fig. 16 is an item indicating whether or not sufficient joint strength is obtained in the seam portion S shown in Fig. 8 after the second welding procedure. In the [sewing joint] item, the case where sufficient joint strength is obtained is [○]. The average height Rc of the concavo-convex shape in the pressing surface 30 used in the specimen of the present evaluation is 0.20 μm or more and 0.23 μm or less.

如圖13所示,在比率Rd較大的比較例13及15中無法得到規定的接合強度。此乃因對線徑Dw緊壓面30的面積過大,在邊界面產生的每一單位面積的能量生成量小。此情形無法得到規定的接合強度,Al金屬線W在邊界面中往往會自導線電極100剝離。As shown in FIG. 13, in Comparative Examples 13 and 15 in which the ratio Rd was large, a predetermined joint strength could not be obtained. This is because the area of the wire diameter Dw pressing surface 30 is too large, and the amount of energy generated per unit area generated on the boundary surface is small. In this case, the predetermined joint strength cannot be obtained, and the Al metal wire W tends to be peeled off from the wire electrode 100 in the boundary surface.

另一方面,在比率Rd較小的比較例14中也無法得到規定的接合強度。此乃因對線徑Dw緊壓面30的面積過小,無法得到充分的接合面積。 相對於此,在實施例16~19中比率Rd為4.0倍以上5.7倍以下。在實施例16~19中可得到所希望的接合強度。 由以上的結果,比率Rd為4.0倍以上5.7倍以下較佳。 據此,可得到所希望的接合強度。On the other hand, in Comparative Example 14 in which the ratio Rd was small, a predetermined joint strength could not be obtained. This is because the area of the wire diameter Dw pressing surface 30 is too small, and a sufficient joint area cannot be obtained. On the other hand, in Examples 16 to 19, the ratio Rd was 4.0 times or more and 5.7 times or less. The desired joint strength was obtained in Examples 16 to 19. From the above results, the ratio Rd is preferably 4.0 times or more and 5.7 times or less. According to this, the desired joint strength can be obtained.

(製造方法) 其次,就與本實施形態有關的銲針1的製造方法的一例參照圖17進行說明。圖17是舉例說明銲針1的製造方法的一部分之流程圖。在圖17顯示銲針1的製造方法之中形成倒角部40的程序以及在緊壓面30與倒角部40形成凹凸形狀的程序。(Manufacturing Method) Next, an example of a method of manufacturing the welding pin 1 according to the present embodiment will be described with reference to Fig. 17 . Fig. 17 is a flow chart illustrating a part of a method of manufacturing the welding pin 1. FIG. 17 shows a procedure for forming the chamfered portion 40 and a procedure for forming the concavo-convex shape on the pressing surface 30 and the chamfered portion 40 in the method of manufacturing the welding pin 1.

如圖17所示,首先藉由在緊壓面30與錐形孔20的邊界部分施以R倒角加工,在該邊界部分形成倒角部40(步驟S101)。R倒角加工是藉由例如刷子研磨進行。刷子研磨的條件例如有研磨壓力及研磨時間,可藉由使該等條件最佳化,形成具有所希望的曲率半徑的倒角部40。As shown in Fig. 17, first, by applying a R chamfering process at a boundary portion between the pressing surface 30 and the tapered hole 20, a chamfered portion 40 is formed at the boundary portion (step S101). R chamfering is performed by, for example, brush grinding. The conditions for brush polishing include, for example, polishing pressure and polishing time, and by optimizing these conditions, a chamfered portion 40 having a desired radius of curvature is formed.

接著,藉由對緊壓面30及倒角部40施以噴砂加工,在緊壓面30及倒角部40的表面形成凹凸形狀(步驟S102)。Then, by applying sandblasting to the pressing surface 30 and the chamfered portion 40, irregularities are formed on the surfaces of the pressing surface 30 and the chamfered portion 40 (step S102).

接著,藉由僅對倒角部40進行刷子研磨,使倒角部40的凹凸形狀中的凸部41的尖銳度比緊壓面30的凹凸形狀中的凸部31的尖銳度小(步驟S103)。據此,製造在緊壓面30與錐形孔20之間具備倒角部40,並且在緊壓面30及倒角部40的表面具有微細的凹凸形狀的銲針1。Then, by only brushing the chamfered portion 40, the sharpness of the convex portion 41 in the uneven shape of the chamfered portion 40 is smaller than the sharpness of the convex portion 31 in the uneven shape of the pressed surface 30 (step S103) ). As a result, the chamfered portion 40 is provided between the pressing surface 30 and the tapered hole 20, and the welding pin 1 having a fine uneven shape on the surface of the pressing surface 30 and the chamfered portion 40 is manufactured.

此外,上述的製造方法的程序為一例,也可以藉由其他的程序形成倒角部40及凹凸形狀。例如在步驟S102中進行噴砂加工後,在步驟S103中僅對倒角部40進行刷子研磨前,對緊壓面30及倒角部40的兩方進行刷子研磨也可以。據此,在緊壓面30及倒角部40的表面可確實形成凸部31、41的頂端部分的面積比凹部32、42的底部分的面積大的凹凸形狀,換言之,凸部31、41的尖銳度比凹部32、42的尖銳度小的凹凸形狀。此外,對緊壓面30及倒角部40的刷子研磨在步驟S103之後進行也可以。Further, the program of the above-described manufacturing method is an example, and the chamfered portion 40 and the uneven shape may be formed by another program. For example, after the blasting process is performed in step S102, both the pressing surface 30 and the chamfering portion 40 may be brush-polished before the brushing of the chamfered portion 40 in step S103. According to this, the surface of the pressing surface 30 and the chamfered portion 40 can be surely formed into a concavo-convex shape in which the area of the distal end portion of the convex portions 31 and 41 is larger than the area of the bottom portion of the concave portions 32 and 42. In other words, the convex portions 31 and 41 are formed. The sharpness is smaller than the sharpness of the concave portions 32 and 42. Further, the brush polishing of the pressing surface 30 and the chamfered portion 40 may be performed after the step S103.

(變形例) 在上述的實施形態中雖然使用所謂瓶頸型的銲針進行了說明,但本案所揭示的銲針未必需要瓶頸型的銲針。例如不具備瓶頸部亦即頂端部分不被細細地刮入的通常型的銲針也可以。(Modification) Although the above-described embodiment has been described using a so-called bottle neck type welding pin, the welding pin disclosed in the present invention does not necessarily require a neck pin type welding pin. For example, a normal type of welding needle which does not have a neck portion, that is, a tip end portion which is not scraped finely may be used.

而且,在上述的實施形態中雖然就在緊壓面與倒角部形成有凹凸形狀的情形的例子進行了說明,但在緊壓面未必需要形成有凹凸形狀。而且,在倒角部與錐形孔形成有凹凸形狀也可以。Further, in the above-described embodiment, an example in which the concavo-convex shape is formed on the pressing surface and the chamfered portion has been described. However, it is not necessary to form the concavo-convex shape on the pressing surface. Further, a concave-convex shape may be formed in the chamfered portion and the tapered hole.

而且,在上述的實施形態中雖然舉將半導體晶片的墊電極與導線架的導線電極電性連接的情形為例進行了說明,但本案所揭示的銲針也能適用於對上述以外的對象物接合銲線的情形。Further, in the above-described embodiment, the case where the pad electrode of the semiconductor wafer is electrically connected to the lead electrode of the lead frame has been described as an example. However, the soldering pin disclosed in the present invention can also be applied to an object other than the above. The case of bonding the wire.

更進一步的效果或變形例可容易由熟習該項技術者導出。因此,本發明的更廣泛的態樣不是被限定於如以上所示且記述的特定的詳細及代表的實施形態。因此,在不脫離藉由添附的申請專利範圍及其均等物定義的總括的發明的概念的精神或範圍各式各樣的變更為可能。Further effects or variations can be readily derived by those skilled in the art. Therefore, the broader aspects of the invention are not limited to the specific details and embodiments shown and described. Therefore, various changes may be made without departing from the spirit or scope of the concept of the invention as defined by the appended claims.

1‧‧‧銲針
11‧‧‧插通孔
12‧‧‧圓筒部
13‧‧‧圓錐部
14‧‧‧瓶頸部
20‧‧‧錐形孔
30‧‧‧緊壓面
31、41‧‧‧凸部
32、42‧‧‧凹部
40‧‧‧倒角部
50‧‧‧頂端面
100‧‧‧導線電極
200‧‧‧墊電極
B‧‧‧區域
Cr‧‧‧假想圓
Dp‧‧‧緊壓面外徑
Dw‧‧‧線徑
θ1‧‧‧錐形孔的錐角
θ2‧‧‧邊界角部的角度
S‧‧‧縫接部分 
T‧‧‧尾部部分
W‧‧‧Al金屬線
1‧‧‧ soldering needle
11‧‧‧ inserted through hole
12‧‧‧Cylinder
13‧‧‧Cone
14‧‧‧ Bottleneck
20‧‧‧Conical hole
30‧‧‧Squeezing surface
31, 41‧‧ ‧ convex
32, 42‧‧‧ recess
40‧‧‧Chamfering
50‧‧‧ top surface
100‧‧‧ wire electrode
200‧‧‧ pads electrode
B‧‧‧Area
Cr‧‧‧ imaginary circle
Dp‧‧‧ pressing surface outer diameter
Dw‧‧‧ Wire diameter θ1‧‧‧ Cone angle of the tapered hole θ2‧‧‧ Angle of the corner of the boundary
S‧‧‧Sewed part
T‧‧‧ tail part
W‧‧‧Al wire

圖1是顯示與本實施形態有關的銲針之模式側視圖。 圖2是圖1所示的H1部之模式放大視圖。 圖3是顯示瓶頸(bottleneck)部的頂端部分之模式側剖面圖。 圖4是圖3所示的H2部之模式放大視圖。 圖5是顯示緊壓面的表面形狀之模式側剖面圖。 圖6是顯示倒角部的表面形狀之模式側剖面圖。 圖7是顯示第一銲程序的樣子之模式側剖面圖。 圖8是顯示第二銲程序的樣子之模式側剖面圖。 圖9是舉例說明倒角部的表面的粗糙度曲線(roughness curve)之圖表。 圖10是顯示分別使倒角部中的凹凸形狀的偏斜度及平均高度以及緊壓面中的凹凸形狀的平均高度變化的情形的評價結果之圖。 圖11是顯示使倒角部的曲率半徑變化的情形的評價結果之圖。 圖12是顯示使倒角部的曲率半徑變化的情形的評價結果之圖。 圖13是顯示使錐形孔的角度變化的情形的評價結果之圖。 圖14是顯示接合(bonding)的模擬的結果的一例之模式的斜視圖。 圖15(a)、(b)是顯示接合的模擬的結果的一例之模式的俯視圖。 圖16是顯示使緊壓面外徑與線徑的比率變化的情形的評價結果之圖。 圖17是舉例說明銲針的製造方法的一部分之流程圖。Fig. 1 is a schematic side view showing a welding pin according to the embodiment. Fig. 2 is a schematic enlarged view of the H1 portion shown in Fig. 1. Fig. 3 is a schematic side sectional view showing a tip end portion of a bottleneck portion. Fig. 4 is a schematic enlarged view of the H2 portion shown in Fig. 3. Fig. 5 is a schematic side sectional view showing the surface shape of the pressing surface. Fig. 6 is a schematic side sectional view showing the surface shape of the chamfered portion. Fig. 7 is a schematic side sectional view showing the state of the first welding procedure. Fig. 8 is a schematic side sectional view showing the state of the second welding procedure. Fig. 9 is a graph illustrating a roughness curve of the surface of the chamfered portion. FIG. 10 is a view showing evaluation results of a case where the skewness and the average height of the uneven shape in the chamfered portion and the average height of the uneven shape in the pressed surface are changed. FIG. 11 is a view showing an evaluation result of a case where the radius of curvature of the chamfered portion is changed. FIG. 12 is a view showing an evaluation result of a case where the radius of curvature of the chamfered portion is changed. Fig. 13 is a view showing an evaluation result of a case where the angle of the tapered hole is changed. Fig. 14 is a perspective view showing a mode of an example of a result of a simulation of bonding. 15(a) and 15(b) are plan views showing an example of a result of a simulation of joining. Fig. 16 is a view showing an evaluation result of a case where the ratio of the outer diameter of the pressing surface to the wire diameter is changed. Fig. 17 is a flow chart illustrating a part of a method of manufacturing a welding pin.

1‧‧‧銲針 1‧‧‧ soldering needle

11‧‧‧插通孔 11‧‧‧ inserted through hole

20‧‧‧錐形孔 20‧‧‧Conical hole

30‧‧‧緊壓面 30‧‧‧Squeezing surface

40‧‧‧倒角部 40‧‧‧Chamfering

100‧‧‧導線電極 100‧‧‧ wire electrode

B‧‧‧區域 B‧‧‧Area

Dw‧‧‧線徑 Dw‧‧‧ wire diameter

W‧‧‧Al金屬線 W‧‧‧Al wire

Claims (12)

一種銲針,其特徵在於包含: 緊壓銲線的緊壓面; 插通有該銲線的插通孔; 連接該插通孔與該緊壓面,朝該緊壓面擴展的錐形孔;以及 設置於該錐形孔與該緊壓面之間的倒角部, 該倒角部在表面具有凹凸形狀,且該凹凸形狀中的凸部的尖銳度比該凹凸形狀中的凹部的尖銳度小。A welding pin, comprising: a pressing surface of a tight bonding wire; an insertion hole through which the bonding wire is inserted; and a tapered hole extending to the pressing surface and connecting the insertion hole and the pressing surface And a chamfered portion disposed between the tapered hole and the pressing surface, the chamfered portion having a concave-convex shape on the surface, and the sharpness of the convex portion in the concave-convex shape is sharper than the concave portion in the concave-convex shape Small. 如申請專利範圍第1項之銲針,其中該倒角部的凹凸形狀為偏斜度為-0.164以下且平均高度為0.035μm以上0.092μm以下。In the welding pin according to the first aspect of the invention, the uneven shape of the chamfered portion has a skewness of -0.164 or less and an average height of 0.035 μm or more and 0.092 μm or less. 如申請專利範圍第1項或第2項之銲針,其中該緊壓面具有凹凸形狀,且該緊壓面的凹凸形狀中的凸部的尖銳度比該倒角部的凹凸形狀中的凸部的尖銳度大。The welding pin of claim 1 or 2, wherein the pressing surface has a concave-convex shape, and a sharpness of the convex portion in the concave-convex shape of the pressing surface is convex than a convex shape in the concave-convex shape of the chamfered portion The sharpness of the ministry is large. 如申請專利範圍第3項之銲針,其中該緊壓面中的凹凸形狀為平均高度為0.113μm以上。The welding pin of claim 3, wherein the uneven shape in the pressing surface has an average height of 0.113 μm or more. 如申請專利範圍第1項或第2項之銲針,其中該倒角部具有平滑地連續於該錐形孔及該緊壓面的曲面,且該曲面的曲率半徑為4.55μm以上20.30μm以下。The welding pin of claim 1 or 2, wherein the chamfered portion has a curved surface that is smoothly continuous to the tapered hole and the pressing surface, and the radius of curvature of the curved surface is 4.55 μm or more and 20.30 μm or less. . 如申請專利範圍第1項或第2項之銲針,其中該倒角部具有平滑地連續於該錐形孔及該緊壓面的曲面,且該曲面的曲率半徑為12.8μm以上20.30μm以下。The welding pin of claim 1 or 2, wherein the chamfered portion has a curved surface that is smoothly continuous with the tapered hole and the pressing surface, and the radius of curvature of the curved surface is 12.8 μm or more and 20.30 μm or less. . 如申請專利範圍第1項或第2項之銲針,其中該錐形孔的錐角為100°以下。The welding pin of claim 1 or 2, wherein the tapered hole has a taper angle of 100 or less. 如申請專利範圍第1項或第2項之銲針,其中該緊壓面的外徑為該銲線的線徑的4.0倍以上5.7倍以下。The welding pin of claim 1 or 2, wherein the outer diameter of the pressing surface is 4.0 times or more and 5.7 times or less of the wire diameter of the bonding wire. 如申請專利範圍第1項或第2項之銲針,其中該緊壓面具有凹凸形狀,且該緊壓面的凹凸形狀中的凸部的尖銳度比該倒角部的凹凸形狀中的凸部的尖銳度大,該緊壓面中的凹凸形狀為平均高度為0.113μm以上,該倒角部具有平滑地連續於該錐形孔及該緊壓面的曲面,且該曲面的曲率半徑為4.55μm以上20.30μm以下。The welding pin of claim 1 or 2, wherein the pressing surface has a concave-convex shape, and a sharpness of the convex portion in the concave-convex shape of the pressing surface is convex than a convex shape in the concave-convex shape of the chamfered portion The sharpness of the portion is large, and the uneven shape in the pressing surface has an average height of 0.113 μm or more, and the chamfered portion has a curved surface smoothly continuous to the tapered hole and the pressing surface, and the radius of curvature of the curved surface is 4.55 μm or more and 20.30 μm or less. 如申請專利範圍第1項或第2項之銲針,其中該緊壓面具有凹凸形狀,且該緊壓面的凹凸形狀中的凸部的尖銳度比該倒角部的凹凸形狀中的凸部的尖銳度大,該緊壓面中的凹凸形狀為平均高度為0.113μm以上,該倒角部具有平滑地連續於該錐形孔及該緊壓面的曲面,且該曲面的曲率半徑為12.8μm以上20.30μm以下。The welding pin of claim 1 or 2, wherein the pressing surface has a concave-convex shape, and a sharpness of the convex portion in the concave-convex shape of the pressing surface is convex than a convex shape in the concave-convex shape of the chamfered portion The sharpness of the portion is large, and the uneven shape in the pressing surface has an average height of 0.113 μm or more, and the chamfered portion has a curved surface smoothly continuous to the tapered hole and the pressing surface, and the radius of curvature of the curved surface is 12.8 μm or more and 20.30 μm or less. 如申請專利範圍第9項之銲針,其中該錐形孔的錐角為100°以下,該緊壓面的外徑為該銲線的線徑的4.0倍以上5.7倍以下。The welding pin according to claim 9 wherein the taper angle of the tapered hole is 100° or less, and the outer diameter of the pressing surface is 4.0 times or more and 5.7 times or less of the wire diameter of the wire. 如申請專利範圍第10項之銲針,其中該錐形孔的錐角為100°以下,該緊壓面的外徑為該銲線的線徑的4.0倍以上5.7倍以下。The welding pin of claim 10, wherein the tapered hole has a taper angle of 100 or less, and an outer diameter of the pressing surface is 4.0 times or more and 5.7 times or less of a wire diameter of the wire.
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