JP2006032532A - Manufacturing method of semiconductor device and manufacturing apparatus thereof - Google Patents

Manufacturing method of semiconductor device and manufacturing apparatus thereof Download PDF

Info

Publication number
JP2006032532A
JP2006032532A JP2004207096A JP2004207096A JP2006032532A JP 2006032532 A JP2006032532 A JP 2006032532A JP 2004207096 A JP2004207096 A JP 2004207096A JP 2004207096 A JP2004207096 A JP 2004207096A JP 2006032532 A JP2006032532 A JP 2006032532A
Authority
JP
Japan
Prior art keywords
bonding pad
bonding
pad portion
hole
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004207096A
Other languages
Japanese (ja)
Inventor
Kazuhiko Matsushita
和彦 松下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2004207096A priority Critical patent/JP2006032532A/en
Publication of JP2006032532A publication Critical patent/JP2006032532A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02123—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body inside the bonding area
    • H01L2224/02125—Reinforcing structures
    • H01L2224/02126—Collar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165—Reinforcing structures
    • H01L2224/02166—Collar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H01L2224/78302—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Abstract

<P>PROBLEM TO BE SOLVED: To prevent a junction from falling into an electrically opened state caused by the growth of a void in an alloy layer between a metal thin wire and a bonding pad. <P>SOLUTION: Just before a bonding pad 1 contacts and connects with a ball 4 at the head of a metal thin wire 2 which passes the first through hole 3 of a capillary 5, the bonding pad 1 is scratched on the surface by a needlelike protruding object 7 projected from a second through hole 6. Thus, the state of an uneven alloy layer is made to form by losing a part of the bonding pad 1 required for connection so as to prevent a junction from falling into an electrically opened defective state by suppressing the influence by the generated void. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、半導体装置を製造する組立工程において、半導体素子のボンディングパッド部、特に最上層に電極部として構成したボンディングパッド部の表面層とこの半導体素子を収納するパッケージのリード部等とを金属細線によって接続するワイヤーボンディングに使用される半導体装置の製造方法および製造装置に関するものである。   The present invention relates to a bonding pad portion of a semiconductor element, particularly a surface layer of the bonding pad portion formed as an electrode portion on the uppermost layer and a lead portion of a package for housing the semiconductor element in an assembly process for manufacturing a semiconductor device. The present invention relates to a manufacturing method and a manufacturing apparatus of a semiconductor device used for wire bonding connected by a thin wire.

従来、半導体素子は外部環境から守るためにパッケージに収納して構成した半導体装置として使用されている。この半導体素子への電源供給や信号の入出力を行うために、半導体素子上に設けられたボンディングパッド部とパッケージのリード部等を電気的に接続することが必要となる。この接続をするために用いられる方法の１つとしてワイヤーボンド接続法が広く知られている。ワイヤーボンディングによる接続は複数のリード部を有するパッケージのフレーム上に半導体素子を接着し、半導体素子上のボンディングパッド部とパッケージのリード部とをアルミニウム、金またはそれらの合金等からなる金属細線により接続する手法である。   Conventionally, a semiconductor element is used as a semiconductor device that is housed in a package in order to protect it from the external environment. In order to supply power to the semiconductor element and to input / output signals, it is necessary to electrically connect a bonding pad portion provided on the semiconductor element and a lead portion of the package. A wire bond connection method is widely known as one of the methods used for this connection. Connection by wire bonding is performed by bonding a semiconductor element onto a frame of a package having a plurality of lead parts, and connecting the bonding pad part on the semiconductor element and the lead part of the package by a thin metal wire made of aluminum, gold, or an alloy thereof. It is a technique to do.

図２は従来の半導体装置の製造方法に用いる金属細線とボンディングパッド部のワイヤーボンディングの接続を説明する図であり、（ａ）はワイヤーボンディングを行う半導体装置の製造装置でボンディングツール先端部分の断面図、（ｂ）はボンディングツール先端部分と半導体素子のボンディングパッド部とを金属細線により接続する領域を拡大した断面図を示している。   FIG. 2 is a diagram for explaining a wire bonding connection between a fine metal wire and a bonding pad used in a conventional method for manufacturing a semiconductor device. FIG. 2A is a sectional view of a bonding tool tip portion in a semiconductor device manufacturing apparatus for wire bonding. FIG. 4B is an enlarged cross-sectional view of a region where the tip end portion of the bonding tool and the bonding pad portion of the semiconductor element are connected by a thin metal wire.

図２（ａ）に示すように金属細線２は、一般的にキャピラリ５と呼ばれるボンディングパッド部１との接合を担う役割を持ったボンディングツールに貫通した孔に挿入されて、その貫通した孔から突出した金属細線２の先端部分に電気スパークなどによってボール部４が形成されている。このボール部４が果たす役割として、貫通した孔への金属細線２の逆引き込み防止やボンディングパッド部１への接合の際のボール径を決定する要因となる。   As shown in FIG. 2 (a), the fine metal wire 2 is inserted into a hole penetrating a bonding tool having a role of joining the bonding pad portion 1 generally called a capillary 5, and from the penetrating hole. A ball portion 4 is formed at the tip end portion of the protruding metal thin wire 2 by electric spark or the like. The role played by this ball portion 4 is a factor that prevents the reverse pulling of the fine metal wire 2 into the through-hole and determines the ball diameter at the time of joining to the bonding pad portion 1.

また、図２（ｂ）に示すようにボンディングツールのキャピラリ５を下降させてボンディングパッド部１上にボール部４を接触させながら超音波や熱を加え、さらにキャピラリ５をボール部４に対し押し付けながら接着をする。   2B, the capillary 5 of the bonding tool is lowered to apply ultrasonic waves or heat while bringing the ball portion 4 into contact with the bonding pad portion 1, and further presses the capillary 5 against the ball portion 4. Adhere while.

近年の拡散プロセスの微細化技術により、半導体素子のチップ面積の縮小が顕著になってきており、それに伴い電極となるボンディングパッド部１の配列によりチップサイズを律則することがないようパッドサイズおよびパッドピッチの縮小が必然的に求められてきている。   With the recent miniaturization technique of the diffusion process, the reduction of the chip area of the semiconductor element has become remarkable, and accordingly, the pad size and the chip size are not restricted by the arrangement of the bonding pad portions 1 serving as electrodes. Reduction of the pad pitch is inevitably required.

そして、この小さなパッドサイズへの接合性を上げるために、ボンディングパッド部１の構造見直し、ワイヤーボンディングの条件見直しなど様々な改善が進められ、機械的強度不足やボール部４の不着など信頼性の面で問題となることを回避するため、ボンディングパッド部１を長方形に形成したり、また、金属細線２とボンディングパッド部１の接続性を上げるために最上層のボンディングパッド部層を厚く形成したり、ワイヤーボンディング時の周波数を上げるなどの効率よく接続するための手段が用いられてきた。
特開平９−２４６３１１号公報 In order to improve the bondability to this small pad size, various improvements such as a review of the structure of the bonding pad portion 1 and a review of wire bonding conditions have been promoted, and reliability such as insufficient mechanical strength and non-bonding of the ball portion 4 has been promoted. In order to avoid problems in terms of surface, the bonding pad portion 1 is formed in a rectangular shape, and the uppermost bonding pad portion layer is formed thick in order to improve the connectivity between the fine metal wire 2 and the bonding pad portion 1. Or means for efficient connection such as increasing the frequency during wire bonding has been used.
Japanese Patent Laid-Open No. 9-246311

このような構成の従来の半導体装置の製造方法では、さらなる拡散プロセスの微細化に伴い狭パッド技術および接合を良化させるパッド構造技術が進み、小さい面積にワイヤーボンディングすることが可能となってきた。これらの技術によって、ボンディングパッド部と金属細線との接合状態は合金層の成長を飛躍的に向上させる結果となっている。   In the conventional method of manufacturing a semiconductor device having such a configuration, as the diffusion process is further miniaturized, the narrow pad technology and the pad structure technology for improving the bonding advance, and it has become possible to perform wire bonding in a small area. . With these techniques, the bonding state between the bonding pad portion and the fine metal wire results in a dramatic improvement in the growth of the alloy layer.

しかしながら、合金層の成長増大による弊害として合金層内部にボイド（空孔）が発生し、ワイヤーボンディングの接合に与える影響が顕著となって問題になりつつある。このボイドの発生により従来条件でのワイヤーボンディングを実施することが困難となっている。実際に、前述したような条件で、ワイヤーボンディングを実施し熱処理を加えた後、研磨処理にて断面を光学顕微鏡で観察したところ、合金層上部にボイドの発生が確認されており、さらにボイドが進行することにより合金層上部で金属細線とボンディングパッド部との接続が電気的に開放状態となり重大な信頼性不良をおこすことが確認されている。   However, as an adverse effect due to the increased growth of the alloy layer, voids (voids) are generated inside the alloy layer, and the influence on the bonding of wire bonding is becoming prominent and becoming a problem. Generation of this void makes it difficult to perform wire bonding under conventional conditions. Actually, after wire bonding was performed under the conditions described above and heat treatment was performed, the cross section was observed with an optical microscope in the polishing process, and it was confirmed that voids were generated on the upper part of the alloy layer. By proceeding, it has been confirmed that the connection between the fine metal wire and the bonding pad portion is electrically opened at the upper part of the alloy layer, causing a serious reliability failure.

本発明は、前記従来技術の問題を解決することに指向するものであり、ボンディングパッド部を従来の平坦な構造から意図的に金属細線と接合される部位を削り、金属細線とボンディングパッド部間の合金層の成長を妨げて、ボイドによって接合された部位が電気的に開放状態となることを防止する半導体装置の製造方法および製造装置を提供することを目的とする。   The present invention is directed to solving the above-described problems of the prior art, and the bonding pad portion is intentionally cut from a conventional flat structure to a portion where the thin metal wire is bonded to the thin metal wire and the bonding pad portion. An object of the present invention is to provide a semiconductor device manufacturing method and a manufacturing apparatus that prevent growth of the alloy layer and prevent a portion bonded by a void from being electrically opened.

前記の目的を達成するために、本発明に係る半導体装置の製造方法および製造装置は、半導体素子のボンディングパッド部と電気的に接続されるパッケージのリード部と接続する金属細線が第１の貫通孔を通り、その先端部分のボール部とボンディングパッド部とを接続するボンディングツールにおいて、金属細線とボンディングパッド部とを接続するボンディングツールの金属細線を挿入する第１の貫通孔を垂線として、ボンディングパッド部上の垂線との交点を頂点とした任意の円錐面に設けた第２の貫通孔より、金属細線の先端に形成されたボール部とボンディングパッド部が接触する直前に、ボンディングパッド部のボール部と接触する部分へ弾性部材により針状の突起物を突出しボンディングパッド部に凹凸面を形成することを特徴とする。   In order to achieve the above object, in a method and an apparatus for manufacturing a semiconductor device according to the present invention, a thin metal wire connected to a lead portion of a package electrically connected to a bonding pad portion of a semiconductor element is first penetrated. In a bonding tool that passes through a hole and connects the ball part at the tip and the bonding pad part, the first through hole for inserting the metal fine line of the bonding tool that connects the metal fine line and the bonding pad part is used as a perpendicular. Immediately before the ball pad formed at the tip of the fine metal wire comes into contact with the bonding pad portion from the second through-hole provided in an arbitrary conical surface having the intersection with the perpendicular line on the pad portion as a vertex, the bonding pad portion A needle-like protrusion is projected by an elastic member to the part that comes into contact with the ball part, and an uneven surface is formed on the bonding pad part. To.

このように、本発明による半導体装置の製造方法および製造装置では、ボンディングツールの第１の貫通孔を通った金属細線の先端のボール部とボンディングパッド部を接触して接続する直前に、第２の貫通孔から突出した針状の突起物によりボンディングパッド部表面を傷を付けることで部分的に除去して、接続に必要な一部分に不均一な合金層の状態を形成させ、合金層に発生したボイドによる影響をなくすことができる。   As described above, in the method and apparatus for manufacturing a semiconductor device according to the present invention, the second portion immediately before the ball portion and the bonding pad portion at the tip of the thin metal wire passing through the first through hole of the bonding tool are brought into contact with each other and connected. The surface of the bonding pad is partially removed by scratching the surface of the bonding pad with the needle-like protrusions protruding from the through-holes, forming a non-uniform alloy layer in the part necessary for connection, and occurring in the alloy layer It is possible to eliminate the influence of the voids.

本発明によれば、ボンディングツールのキャピラリを下降させてボンディングパッド部上にボール部を接触させながら超音波や熱を加え、さらにキャピラリをボール部に対し押し付けながら接続する際、意図的にボンディングパッド部のボール部との接合部分の表面を一部削って凹凸パターンの表面として、その結果、金属細線とボンディングパッド部の接合部分の合金層の状態を不均一に成長させて、これにより発生したボイドの成長を抑えて接合部分が電気的に開放状態となる不良を防ぐことができるという効果を奏する。   According to the present invention, when bonding is performed intentionally when a capillary of a bonding tool is lowered and ultrasonic waves and heat are applied while bringing the ball portion into contact with the bonding pad portion, and further the capillary is pressed against the ball portion. Part of the surface of the joint part with the ball part of the part is scraped to form the surface of the concavo-convex pattern, and as a result, the state of the alloy layer in the joint part of the metal fine wire and the bonding pad part grows unevenly, which is caused by this There is an effect that it is possible to prevent a defect in which the joint portion is electrically opened by suppressing the growth of the void.

以下、図面を参照して本発明における実施の形態を詳細に説明する。   Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

図１は本発明の実施の形態における半導体装置の製造方法に用いる金属細線とボンディングパッド部のワイヤーボンディング接続を説明する図である。ここで、前記従来例を示す図２において説明した構成部材に対応し実質的に同等の機能を有するものには同一の符号を付してこれを示す。   FIG. 1 is a view for explaining wire bonding connection between a fine metal wire and a bonding pad used in a method for manufacturing a semiconductor device according to an embodiment of the present invention. Here, components corresponding to the components described in FIG. 2 showing the conventional example and having substantially the same functions are denoted by the same reference numerals.

図１（ａ）は本実施の形態におけるワイヤーボンディングに用いるキャピラリと呼ばれるボンディングツールとボンディングパッド部の断面図、（ｂ）はキャピラリをボンディングパッド部側から見た図である。   FIG. 1A is a cross-sectional view of a bonding tool called a capillary used for wire bonding in this embodiment and a bonding pad portion, and FIG. 1B is a view of the capillary as seen from the bonding pad portion side.

図１（ａ）に示すように本実施の形態のキャピラリ５は、従来と同様に金属細線２が通る第１の貫通孔３を有しているが、それ以外に第２の貫通孔６を有していることが特徴である。本実施の形態では従来の装置に具備されたキャピラリ５を下降させてボンディングパッド部１上にボール部４を接触させながら超音波や熱を加え、さらにキャピラリ５をボール部４に対し押し付けながら接着する間際に、第２の貫通孔６から金属でできた針状突起物７を突出させボンディングパッド部１の表面層の接合に必要な部分を一部削って、これにより接合の際にできる合金層を不均一に成長をさせることができる。   As shown in FIG. 1 (a), the capillary 5 of the present embodiment has a first through hole 3 through which the fine metal wire 2 passes as in the conventional case, but in addition to this, the second through hole 6 is provided. It has a feature. In this embodiment, the capillary 5 provided in the conventional apparatus is lowered, ultrasonic waves and heat are applied while the ball part 4 is brought into contact with the bonding pad part 1, and further, the capillary 5 is pressed against the ball part 4 and bonded. An alloy that is formed at the time of joining is obtained by projecting a needle-like projection 7 made of metal from the second through-hole 6 and cutting off a portion necessary for joining the surface layer of the bonding pad portion 1. The layer can be grown non-uniformly.

本実施の形態の図１（ａ）に示すように、第２の貫通孔６の中心線上に金属細線２の先に形成されたボール部４とボンディングパッド部１上の交点があるため、接合される部位に必然的に接触することが可能となる。このような形態にすることによりワイヤーボンディングを実施した際に針状突起物７により形成したボンディングパッド部１の表面上の針跡傷により、合金層のできる状態が不均一になり、ボイドが発生した状態であってもボイドの成長によってボイド同士がつながり合金層部分において電気的な開放状態に至ることをなくすことができる。   As shown in FIG. 1A of the present embodiment, there is an intersection point on the bonding pad portion 1 and the ball portion 4 formed at the tip of the thin metal wire 2 on the center line of the second through-hole 6. It becomes possible to inevitably come into contact with the part to be done. By adopting such a configuration, when wire bonding is performed, needle marks on the surface of the bonding pad portion 1 formed by the needle-like protrusions 7 make the alloy layer non-uniform and voids are generated. Even in such a state, it is possible to prevent the voids from being connected by the growth of the voids and reaching an electrically open state in the alloy layer portion.

以上のことから、キャピラリ５の第２の貫通孔６に金属でできた針状突起物７を配設し、螺旋状の弾性部材（例えば、コイルバネ等）（図示せず）により突出することによって、従来、平面であったボンディングパッド部１の面に凹凸パターンが形成されたボンディングパッド部１の表面構造ができ、該当する金属細線２とボンディングパッド部１の接合における合金層の成長を不均一な状態にでき、発生したボイドの成長によって金属細線２とボンディングパッド部１との接続が電気的な開放状態となる不良を防止することができる。   From the above, the needle-like protrusion 7 made of metal is disposed in the second through hole 6 of the capillary 5 and protruded by a spiral elastic member (for example, a coil spring or the like) (not shown). Thus, the surface structure of the bonding pad portion 1 in which the concave / convex pattern is formed on the surface of the bonding pad portion 1 which has been a flat surface can be formed, and the growth of the alloy layer in the bonding of the corresponding metal thin wire 2 and the bonding pad portion 1 is uneven. It is possible to prevent such a failure that the connection between the fine metal wire 2 and the bonding pad portion 1 is in an electrically open state due to the growth of the generated void.

なお、突出した針状突起物７はボンディングパッド部１上に凹凸パターンを形成した後は第２の貫通孔６内に回収され、その後、ボンディングパッド部１上の凹凸パターン形成部分にボール部４との接合による合金層が形成される。   The protruding needle-like protrusions 7 are collected in the second through holes 6 after forming the concave / convex pattern on the bonding pad portion 1, and then the ball portion 4 is formed on the concave / convex pattern forming portion on the bonding pad portion 1. An alloy layer is formed by bonding with the.

本発明に係る半導体装置の製造方法および製造装置は、金属細線とボンディングパッド部の接合部分の合金層の状態を不均一に成長させて、発生したボイドによる影響をなくし接合部分が電気的に開放状態となる不良を防ぐことができ、半導体装置を製造する組立工程のボンディングパッド部表面層と半導体素子を収納するパッケージのリード部とを金属細線で接続するワイヤーボンディングに用いて有用である。   The method and apparatus for manufacturing a semiconductor device according to the present invention grows the state of the alloy layer in the joint portion between the fine metal wire and the bonding pad portion unevenly, eliminates the influence of the generated void, and electrically opens the joint portion. It can be used for wire bonding in which a bonding pad portion surface layer in an assembly process for manufacturing a semiconductor device and a lead portion of a package containing a semiconductor element are connected by a thin metal wire.

（ａ）は本実施の形態におけるワイヤーボンディングに用いるキャピラリとボンディングパッド部の断面図、（ｂ）はキャピラリをボンディングパッド部側から見た図(A) is sectional drawing of the capillary and bonding pad part which are used for the wire bonding in this Embodiment, (b) is the figure which looked at the capillary from the bonding pad part side （ａ）はボンディングツール先端部分の断面図、（ｂ）はボンディングツール先端部分とボンディングパッド部を金属細線で接続する領域拡大断面図(A) is a sectional view of a bonding tool tip portion, (b) is an enlarged sectional view of a region where a bonding tool tip portion and a bonding pad portion are connected by a thin metal wire.

符号の説明Explanation of symbols

１ ボンディングパッド部
２ 金属細線
３ 第１の貫通孔
４ ボール部
５ キャピラリ
６ 第２の貫通孔
７ 針状突起物
８ 保護膜
９ 第１層間絶縁膜
１０ 第２層間絶縁膜 DESCRIPTION OF SYMBOLS 1 Bonding pad part 2 Metal fine wire 3 1st through-hole 4 Ball | bowl part 5 Capillary 6 2nd through-hole 7 Needle-like protrusion 8 Protective film 9 1st interlayer insulation film 10 2nd interlayer insulation film

Claims (4)

金属細線とボンディングパッド部とを接続するボンディングツールの前記金属細線を挿入する第１の貫通孔を垂線として、前記ボンディングパッド部上の前記垂線との交点を頂点とした任意の円錐面に設けた第２の貫通孔より、前記金属細線の先端に形成されたボール部と前記ボンディングパッド部が接触する直前に、前記ボンディングパッド部の前記ボール部と接触する部分へ針状の突起物を突出して前記ボンディングパッド部に凹凸面を形成することを特徴とする半導体装置の製造方法。   The first through-hole for inserting the metal fine wire of the bonding tool for connecting the metal fine wire and the bonding pad portion is a vertical line, and is provided on an arbitrary conical surface having an intersection with the vertical line on the bonding pad portion as a vertex. A needle-like protrusion protrudes from the second through hole into a portion of the bonding pad portion that contacts the ball portion immediately before the ball portion formed at the tip of the fine metal wire contacts the bonding pad portion. A method of manufacturing a semiconductor device, comprising forming an uneven surface on the bonding pad portion. 前記針状の突起物を、前記第２の貫通孔より弾性部材によって突出することを特徴とする請求項１記載の半導体装置の製造方法。   2. The method of manufacturing a semiconductor device according to claim 1, wherein the needle-like protrusion is protruded by an elastic member from the second through hole. 金属細線とボンディングパッド部とを接続するボンディングツールを用いる半導体装置の製造装置であって、前記ボンディングツールの前記金属細線を挿入する第１の貫通孔を垂線として、前記ボンディングパッド部上の前記垂線との交点を頂点とした任意の円錐面に設けた第２の貫通孔と、前記ボンディングパッド部の前記金属細線の先端に形成されたボール部と接触する部分へ前記第２の貫通孔より突出する針状の突起物とを備え、前記ボール部と前記ボンディングパッド部が接触する直前に、前記ボンディングパッド部に凹凸面を形成することを特徴とする半導体装置の製造装置。   A manufacturing apparatus of a semiconductor device using a bonding tool for connecting a thin metal wire and a bonding pad portion, wherein the perpendicular on the bonding pad portion is a first through hole into which the thin metal wire of the bonding tool is inserted. Projecting from the second through hole to a portion of the bonding pad portion that comes into contact with the ball portion formed at the tip of the thin metal wire and the second through hole provided in an arbitrary conical surface having the intersection with An apparatus for manufacturing a semiconductor device, characterized in that an irregular surface is formed on the bonding pad portion immediately before the ball portion and the bonding pad portion contact each other. 前記針状の突起物に、前記第２の貫通孔より突出する弾性部材を備えたことを特徴とする請求項３記載の半導体装置の製造装置。   The semiconductor device manufacturing apparatus according to claim 3, wherein the needle-like protrusion includes an elastic member protruding from the second through hole.
JP2004207096A 2004-07-14 2004-07-14 Manufacturing method of semiconductor device and manufacturing apparatus thereof Pending JP2006032532A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004207096A JP2006032532A (en) 2004-07-14 2004-07-14 Manufacturing method of semiconductor device and manufacturing apparatus thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004207096A JP2006032532A (en) 2004-07-14 2004-07-14 Manufacturing method of semiconductor device and manufacturing apparatus thereof

Publications (1)

Publication Number Publication Date
JP2006032532A true JP2006032532A (en) 2006-02-02

Family

ID=35898538

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004207096A Pending JP2006032532A (en) 2004-07-14 2004-07-14 Manufacturing method of semiconductor device and manufacturing apparatus thereof

Country Status (1)

Country Link
JP (1) JP2006032532A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111447740A (en) * 2019-01-17 2020-07-24 日本特殊陶业株式会社 Package with a metal layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111447740A (en) * 2019-01-17 2020-07-24 日本特殊陶业株式会社 Package with a metal layer

Similar Documents

Publication Publication Date Title
JP2004088005A (en) Capillary for wire bonding and wire-bonding method using same
JP2735022B2 (en) Bump manufacturing method
US7597231B2 (en) Wire bonding capillary tool having multiple outer steps
JPH03183139A (en) Method for wire bonding
JP2005159267A (en) Semiconductor and wire bonding method
JPH1064941A (en) Capillary for wire bonding device
JPH05226408A (en) Tab integrated circuit
JP2006032532A (en) Manufacturing method of semiconductor device and manufacturing apparatus thereof
JP2000183263A (en) Manufacture of semiconductor package
JP2005197488A (en) Projection electrode, bonding capillary and semiconductor chip
JPH06283564A (en) Wire bonding method
JPH05267385A (en) Wire bonding apparatus
JPH11288960A (en) Wire-bonding connection and tool for bonding surface removal removal
JP2003282629A (en) Ultrasonic flip chip mounting method
JP2005302941A (en) Manufacturing method of semiconductor device
JP2009054950A (en) Bump forming method
JP2006351846A (en) Semiconductor device and its manufacturing method
JPS6178128A (en) Bonding tool for manufacture of semiconductor device
JP2008066370A (en) Wire bonding method
JP2006278454A (en) Method of forming stud bump
JPH07263477A (en) Capillary for connecting coated bonding fine wire
KR100715978B1 (en) Wire bonding capillary with a device for producing spark
JPH10199913A (en) Wire-bonding method
JPH11307571A (en) Structure and method of wire bonding
JPH11186316A (en) Device and method of wire bonding, and lead frame