TW201600633A - 成膜裝置及其所使用之基板支座 - Google Patents
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Abstract
在基板上形成化合物半導體膜的成膜裝置,係在處理容器內將複數個基板(W)保持於基板支座(34)的狀態下,一邊對基板支座(34)進行感應加熱而以該熱加熱基板(W),一邊對處理容器內供給處理氣體,而進行成膜。基板支座(34),係具有沿著圓周方向所配列之用於收容基板(W)而進行定位的複數個凹部(37),在凹部(37)之相鄰的彼此之間,係形成有連結該些的連結凹部(38)。
Description
本發明,係關於藉由感應加熱,而在基板上形成SiC膜等之化合物半導體膜的成膜裝置及其所使用之基板支座。
期望SiC、GaN、GaAs、AlN等之化合物半導體比Si更能夠實現省能源或小型化,進而被關注作為下一代半導體。在該些化合物半導體之製造中,係大多使用在基板上形成化合物半導體膜,而使其磊晶成長的手法(例如,專利文獻1)。
在形成化合物半導體膜時,為了一邊在基板上保持良好的結晶性一邊使具有與基板結晶相同之方位關係的單結晶成長,而有以1000℃以上的高溫且長時間進行成膜之必要。
因此,與在矽基板上形成金屬膜等般的單片成膜不同,從生產率提升之觀點來看,採用了在基板支座上配置複數個基板而對該些複數個基板以一次性方式進行成膜處理的半批方式,又,根據高溫加熱之必要性採用感
應加熱方式(例如,專利文獻2)。在專利文獻2中,基板支座,係形成為圓板狀,沿著其圓周方向配置複數個基板。在像這樣之半批方式的情況下,一般,基板之定位,係藉由在基板支座設置複數個凹部,而在其中配置基板的方式,來予以進行。
專利文獻1:日本特開2001-024221號公報
專利文獻2:日本特開2008-159947號公報
然而,發現了存在下述情形:在複數個凹部(該複數個凹部,係在基板支座沿著圓周方向而形成)配置基板,進行感應加熱而形成化合物半導體膜時,副產物會附著於基板支座,且飛散至基板。特別是,使用石墨來作為基板支座,在基板上形成SiC膜時,像這樣的現象較為顯著。像這樣飛散的副產物粒子,係當粒子尺寸比較大,而附著於基板上時,則元件將受到致命影響。
因此,本發明之目的,係提供一種可抑制副產物粒子從基板支座飛散至基板的成膜裝置及其所使用之基板支座。
根據本發明之一觀點,提供一種成膜裝置,
在基板上形成化合物半導體膜,該成膜裝置,其特徵係,具備有:處理容器,進行成膜處理;基板支座,在前述處理容器內,由保持複數個基板的導電性材料所構成;感應加熱線圈,在前述處理容器內形成感應磁場而用於對前述基板支座進行感應加熱;高頻電源,對前述感應加熱線圈施加高頻電力;氣體供給手段,對前述處理容器內供給化合物半導體成膜用的處理氣體;及排氣手段,對前述處理容器內進行排氣,前述基板支座,係具有沿著圓周方向所配列之用於收容基板而進行定位的複數個凹部,在前述凹部之相鄰的彼此之間,係形成有連結該些的連結凹部。
根據本發明之其他觀點,提供一種基板支座,在供給預定處理氣體,而在基板上形成化合物半導體膜的成膜裝置中,用於在處理容器內保持複數個基板,對藉由感應加熱所保持之基板進行加熱的基板支座,其特徵係,具有沿著圓周方向所配列之用於收容基板而進行定位的複數個凹部,在前述凹部之相鄰的彼此之間,係形成有連結該些的連結凹部。
作為前述化合物半導體膜,係SiC膜的情況較適用。此時,作為前述基板支座,可適當地使用由石墨或SiC所構成者,或是將SiC膜塗佈於石墨製之本體而形成者。前述SiC膜之塗佈,係可藉由一邊在前述處理容器內配置前述石墨製之本體,並對前述處理容器內供給前述處理氣體,一邊進行感應加熱的方式,予以形成。
前述凹部與前述連接凹部連續地構成環狀凹
部為較佳。前述連接凹部之輪廓為曲線狀為較佳。
根據本發明,由於在基板支座設置用於收容基板而進行定位的複數個凹部,且在前述凹部之相鄰接的彼此之間,設置有連結該些的連結凹部,故流過較多的感應電流之凹部間的壁變得不存在,從而可減少副產物粒子的飛散量。因此,可減少附著於基板上之副產物粒子的個數。
10‧‧‧處理容器
12‧‧‧排氣管線
14‧‧‧真空泵
16、16’、161、261‧‧‧感應加熱線圈
18‧‧‧高頻電源
20‧‧‧處理氣體供給系統
21‧‧‧處理氣體供給配管
30‧‧‧載置台
34‧‧‧基板支座
37‧‧‧凹部
38‧‧‧連接凹部
100‧‧‧成膜裝置
W‧‧‧基板
[圖1]表示本發明之一實施形態之成膜裝置的剖面圖。
[圖2]表示圖1之成膜裝置所使用之基板支座之一例的平面圖。
[圖3]表示圖2之基板支座之一部分的立體圖。
[圖4]表示以往之成膜裝置所使用之基板支座的平面圖。
[圖5]用於說明在以往之成膜裝置中,在基板支座上的基板發生落下(downfall)之機制的圖。
[圖6]表示在以往的基板支座中相對於累積膜厚之落下之個數的圖。
[圖7]表示在石墨製之基材預塗敷SiC膜,而進一步使用形成有連結凹部的基板支座,進行SiC膜之成膜時之累積成膜時間與落下個數之關係的圖。
[圖8]表示基板支座之其他例的平面圖。
[圖9]表示感應加熱線圈之其他例的圖。
[圖10]表示感應加熱線圈之另外其他例的圖。
[圖11]表示感應加熱線圈之又另外其他例的圖。
以下,參閱添加圖面來說明本發明之實施形態。
圖1,係表示本發明之一實施形態之成膜裝置的剖面圖;圖2,係表示圖1之成膜裝置所使用之基板支座之一例的平面圖;圖3,係表示圖2之基板支座之一部分的立體圖。在此,係以使SiC在由SiC所構成的基板(晶圓)上磊晶成長,而形成作為化合物半導體膜之SiC膜之半批式的成膜裝置為例來進行說明。
成膜裝置100,係具有在內部形成減壓空間,且用以對基板施予成膜處理之呈大致長方體形狀的處理容器10。處理容器10,係由石英等的介電質所構成。
在處理容器10,係連接有排氣管線12,在排氣管線12,係設置有作為排氣手段的真空泵14與作為壓力調整手段的電導可變閥13。且,藉由真空泵14經由排氣管線12對處理容器10內進行排氣,而使處理容器10內調整為預定之真空狀態(減壓狀態)。又,在處理容器10,係設置有壓力計11,根據壓力計11的測定值,以電導可變閥13實施處理容器內之壓力的調整。
在處理容器10之上側,係設置有呈漩渦狀的感應加熱線圈16,在感應加熱線圈16,係經由供電線17而連接有高頻電源18。又,在供電線17,係設置有進行阻抗調整的匹配電路19。而且,藉由從高頻電源18經由供電線17而對感應加熱線圈16供給高頻電力的方式,產生感應磁場,感應電流會流至處理容器10內的導電體,而使得該導電體被感應加熱。
又,成膜裝置100,係具有將氣體供給至處理容器10內的處理氣體供給系統20,從處理氣體供給系統20延伸的處理氣體供給配管21,係被連接於處理容器10。
處理氣體供給系統20,係具有:供給源,供給SiH4氣體、C3H8氣體、H2氣體、TMA(三甲基鋁)氣體、N2氣體;及配管系統,從該些供給源連接於處理氣體供給配管,在配管系統,係設置有開關閥及質流控制器等的流量控制器。且,在處理容器10內的基板上,藉由磊晶成長形成SiC膜時,對處理容器10內供給SiH4氣體、C3H8氣體及H2氣體以作為用於成膜的原料氣體。又,因應所需,可藉由供給TMA氣體或N2氣體的方式,調整所形成之SiC膜的電性特性。另外,該些處理氣體只是一例,亦可使用其他氣體形成SiC膜。
在處理容器10內,係於處理容器10內水平地設置有圓板狀載置台30,該圓板狀載置台30,係載置有保持複數片基板W的基板支座。載置台30,係藉由從
其中心延伸於下方的筒狀旋轉軸31而被加以支撐。旋轉軸31,係貫穿處理容器10之底部而達其下方,並藉由未圖示的旋轉驅動機構而旋轉。而且,載置台30,係隨著旋轉軸31之旋轉而旋轉。旋轉軸31與處理容器10的底部之間,係藉由流體封材32而氣密地密封。
在載置台30之上面,係可以水平狀態載置直徑小於載置台30之呈圓板狀的基板支座34,且在該基板支座34保持有複數個基板W。在本例中,8片基板W,係等間隔地配列於基板支座34的圓周方向。其中,保持於基板支座34之基板W的片數,並不限於此。該基板支座34,係被支撐於升降構件35,升降軸36,係在旋轉軸31中從升降構件35的下面延伸至下方。而且,藉由未圖示之升降機構,經由升降軸36、升降構件35來使基板支座34升降,便可連同基板支座34一起搬送複數個基板W。基板支座34,係從設置於處理容器10之側壁的搬入搬出口(未圖示)被搬入搬出,便可在處理容器10的外部對基板支座34進行基板W之移載。搬入搬出口,係藉由閘閥(未圖示)予以開關。又,基板支座34亦可隨著載置台30之旋轉而旋轉,複數個基板W便進行公轉。
載置台30及基板支座34,係由如石墨或SiC般的耐熱性高,且容易藉由感應加熱來加熱的導電性材料所構成。如圖2、3所示,在基板支座34的表面,係形成有用以收容基板W而進行定位的複數個凹部37。凹部37,係對應於基板W之排列,等間隔地配列於基板支座
34的圓周方向,相鄰之凹部37彼此,係以連結凹部38來予以連接。亦即,在相接的凹部37之間,係不存在壁,凹部37與連接凹部38連續地構成環狀凹部。
另外,亦可將基板支座34固定於載置台30,而在處理容器10內搬入.搬出基板W。又,並非使基板支座34與載置台30一起旋轉,亦可構成為僅使基板支座34旋轉,又,亦可不使基板支座34旋轉。而且,亦可具有基板W自轉的機構。
在像這樣構成的成膜裝置中,係首先開啟閘閥,藉由搬送裝置的搬送臂,從搬入搬出口將載置有複數個基板W的基板支座34搬入至處理容器10內,而載置於載置台30上。然後,關閉閘閥,使處理容器10內成為密閉狀態。此時,複數個基板W,係被收容於各凹部37(各凹部37,係被形成於基板支座34的表面),而予以定位。
接下來,藉由未圖示的旋轉驅動機構一邊使基板支座34與載置台30一起旋轉,一邊使高頻電源18成為ON,並對感應加熱線圈16供給高頻電力。藉此,藉由感應加熱,予以加熱由導電體所構成的載置台30及基板支座34,以使該些溫度上升。
此時,由於載置台30及基板支座34,係由如石墨或SiC般之耐熱性高、可容易藉由感應加熱來加熱且易藉由輻射來加熱基板W的材料所構成,因此,可效率良好地加熱基板W,予以加熱至例如1500~1750℃的高
溫。
如此一來,在基板W被加熱的狀態下,從處理氣體供給系統20,經由處理氣體供給配管21,對處理容器10內供給SiH4氣體、C3H8氣體及H2氣體。在必需調整SiC膜之電性特性的情況下等,係因應所需,加入TMA氣體或N2氣體。
在上述處理氣體中,雖然C3H8氣體之分解溫度高,為1200℃以上,但在本實施形態中,係如上述由於基板W被加熱至例如1500~1750℃的高溫,因此,被供給至處理容器10內的處理氣體可在基板W上分解,而藉由磊晶成長在基板W上形成SiC膜。
如此一來,由於在將複數片基板W保持於基板支座34的狀態下,可同時處理複數片基板W,因此,處理效率比單片式的成膜裝置高。
在該成膜時,副產物會附著於基板支座34的表面。特別是在基板支座34是由石墨所構成的情況下,係容易形成作為副產物的3C-SiC結晶。
如圖4所示,在以往的成膜裝置中,雖係單純使用了基板支座34’(該基板支座34’,係設置有複數個對應於基板W的圓形凹部37’),但在像這樣的形狀中,係在相鄰的凹部37’之間存在有狹窄的壁41。由於在像這樣狹窄的部分有流過較多感應電流之傾向,故在壁41會流有比其他部分更多的電流,而溫度比其他部分上升。另一方面,由於作為副產物而附著於石墨製之基板支
座的3C-SiC結晶,係對於石墨之密接性差,故如圖5所示,副產物42會更容易在被加熱至更高溫度之壁41的部分剝離,成為副產物粒子43而飛散,附著於基板W上。像這樣飛散的副產物粒子43,係當粒子尺寸比較大而附著於基板W上時,形成為被稱為落下的缺陷。當落下發生時,該部分的元件將受到致命的影響。而且,像這樣的落下,係當相對於基板支座之副產物的膜厚超過預定厚度時,急遽增加。圖6,係表示在以往的基板支座中相對於累積膜厚之落下個數的圖。如該圖所示,從累積膜厚超過大約120μm來看,可知落下之個數急遽上升。
因此,在本實施形態中,係去掉流過較多感應電流的壁41,並使得收容基板W之凹部37之相鄰的彼此以連接凹部38來予以連接,凹部37與連接凹部38連續地構成環狀凹部。
藉此,可去除流過較多感應電流而溫度高於其他部分的部位,且可減少副產物粒子的飛散量。因此,可減少附著於基板上之副產物粒子的個數。
又,由於感應電流,係容易在尖的部分或稜角的部分變大,故連接凹部38之輪廓是形成為曲線狀為較佳。
在基板支座34是以SiC所構成的情況下,雖然副產物會形成為4H-SiC結晶,而比3C-SiC結晶更難以剝離,但由於在高溫部分仍會產生副產物粒子之飛散,因此,如本實施形態般之構造的基板支座是有效的。從使副
產物粒子之飛散量本身減少的觀點來看,相較於使用石墨作為基板支座34,使用SiC是較為有利。
但是,由於SiC比石墨昂貴,因此,作為基板支座34,使用在石墨製之基材預塗敷SiC膜者為較佳。預塗敷處理,係可藉由下述方式加以進行:在將基板支座34設置於處理容器10內的載置台30上,且不保持基板W的狀態下,一邊使高頻電源18成為ON,對感應加熱線圈16供給高頻電力,加熱載置台30及基板支座37,一邊從處理氣體供給系統20,經由處理氣體供給配管21,對處理容器10內供給SiH4氣體、C3H8氣體及H2氣體。
如此一來,藉由進行預塗敷的方式,在石墨製的基材形成密接性良好的SiC預塗敷膜,且藉由接下來的成膜處理,可減少作為副產物而形成於基板支座34的3C-SiC結晶,且可進一步減少落下。
實際上,作為基板支座,在使用了以連接凹部連接基板收容用複數個凹部之本實施形態之基板支座的情況,及在使用了獨立形成基板收容用複數個凹部而不使用連接凹部之以往之基板支座的情況下,比較落下之個數密度。另外,基板支座之材質,係設成為石墨,成膜溫度設成為1630℃、成膜時間設成為60min。作為其結果,在以往的情形下,落下雖為數十個/cm2級別,但已確認可改善為0.7個/cm2。又,使用基板支座(該基板支座,係在具有本實施形態之形狀的石墨製基材,形成膜厚34μm
的SiC預塗敷膜)來測定落下之個數密度的結果,已確認可進一步改善為0.1個/cm2。
接下來,求出使用基板支座(該基板支座,係在像上述之石墨製之基板,形成膜厚34μm的SiC預塗敷膜)而以基板溫度1725℃進行SiC膜之成膜時之累積成膜時間與落下個數的關係。其結果表示於圖7。如圖7所示,已確認下述情形:雖然落下個數多少有偏差,有時暫時增加,但即使累積成膜時間增加,亦維持落下個數大約10個以下。
另外,本發明係不限定於上述實施形態,可進行各種變形。例如,在上述實施形態中,雖表示了在基板支座上,沿著圓周方向形成複數個凹部,而僅在圓周方向配置基板的情形,但並不排除在其他位置配置基板,例如如圖8所示,除了圓周方向之凹部37之外,在中央也亦可設置收容基板的凹部137,並配置基板。又,基板支座上之圓周方向之凹部的個數,亦即配置於圓周方向之基板的個數亦不限於上述實施形態。
又,在上述實施形態中,作為感應加熱手段,雖表示了在處理容器10之上側設置呈漩渦狀之感應加熱線圈16的例子,但並不限定於此,如圖9所示,亦可在處理容器10之下側設置漩渦狀的感應加熱線圈16’,或亦可在處理容器10之上下兩側設置漩渦狀的感應加熱線圈。又,如圖10所示,亦可設置對處理容器10縱向捲繞的感應加熱線圈161,進一步,如圖11所示,亦可設
置對處理容器10橫向捲繞的感應加熱線圈261。又,並非捲繞線圈,亦可為以包圍處理容器的方式,配列若干四角狀線圈的感應加熱線圈。
又,在上述實施形態中,雖係表示關於在基板上形成SiC膜以作為化合物半導體膜的情況,但不限於此,亦可適用於形成GaN膜、GaAs膜、A1N膜等之其他化合物半導體膜的情況。作為基板,為了藉由磊晶成長形成該些化合物半導體膜,而只要使用通常所用的手段即可。
30‧‧‧載置台
34‧‧‧基板支座
37‧‧‧凹部
38‧‧‧連接凹部
Claims (16)
- 一種成膜裝置,在基板上形成化合物半導體膜的成膜裝置,該成膜裝置,其特徵係,具備有:處理容器,進行成膜處理;基板支座,在前述處理容器內,由保持複數個基板的導電性材料所構成;感應加熱線圈,在前述處理容器內形成感應磁場而用於對前述基板支座進行感應加熱;高頻電源,對前述感應加熱線圈施加高頻電力;氣體供給手段,對前述處理容器內供給化合物半導體成膜用的處理氣體;及排氣手段,對前述處理容器內進行排氣,前述基板支座,係具有沿著圓周方向所配列之用於收容基板而進行定位的複數個凹部,在前述凹部之相鄰的彼此之間,係形成有連結該些的連結凹部。
- 如申請專利範圍第1項之成膜裝置,其中,前述化合物半導體膜,係SiC膜。
- 如申請專利範圍第2項之成膜裝置,其中,前述基板支座,係由石墨所構成。
- 如申請專利範圍第2項之成膜裝置,其中,前述基板支座,係由SiC所構成。
- 如申請專利範圍第2項之成膜裝置,其中,前述基板支座,係在石墨製之本體塗佈SiC膜而形成者。
- 如申請專利範圍第5項之成膜裝置,其中,前述SiC膜之塗佈,係藉由一邊在前述處理容器內配置前述石墨製之本體,並對前述處理容器內供給前述處理氣體,一邊進行感應加熱的方式,來予以形成。
- 如申請專利範圍第1項之成膜裝置,其中,前述凹部與前述連接凹部連續地構成環狀凹部。
- 如申請專利範圍第1項之成膜裝置,其中,前述連接凹部的輪廓,係曲線狀。
- 一種基板支座,在供給預定之處理氣體,而在基板上形成化合物半導體膜的成膜裝置中,用於在處理容器內保持複數個基板,對藉由感應加熱的方式所保持之基板進行加熱的基板支座,其特徵係,具有沿著圓周方向而配列之用於收容基板而進行定位的複數個凹部,在前述凹部之相鄰的彼此之間,係形成有連結該些的連結凹部。
- 如申請專利範圍第9項之基板支座,其中,前述化合物半導體膜,係SiC膜。
- 如申請專利範圍第10項之基板支座,其中,該基板支座,係由石墨所構成。
- 如申請專利範圍第10項之基板支座,其中,該基板支座,係由SiC所構成。
- 如申請專利範圍第10項之基板支座,其中,該基板支座,係在石墨製之本體塗佈SiC膜而形成者。
- 如申請專利範圍第13項之基板支座,其中,前述SiC膜之塗佈,係藉由一邊在前述處理容器內配置前述石墨製之本體,並對前述處理容器內供給前述處理氣體,一邊進行感應加熱的方式,來予以形成。
- 如申請專利範圍第9項之基板支座,其中,前述凹部與前述連接凹部連續地構成環狀凹部。
- 如申請專利範圍第9項之基板支座,其中,前述連接凹部的輪廓,係曲線狀。
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JP5051875B2 (ja) * | 2006-12-25 | 2012-10-17 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
JP2011077476A (ja) * | 2009-10-02 | 2011-04-14 | Sumco Corp | エピタキシャル成長用サセプタ |
KR20110136583A (ko) * | 2010-06-15 | 2011-12-21 | 삼성엘이디 주식회사 | 서셉터 및 이를 구비하는 화학 기상 증착 장치 |
-
2014
- 2014-01-28 JP JP2014013137A patent/JP2015141966A/ja active Pending
- 2014-10-28 WO PCT/JP2014/078600 patent/WO2015114896A1/ja active Application Filing
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2015
- 2015-01-21 TW TW104101958A patent/TW201600633A/zh unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN112210827A (zh) * | 2019-07-12 | 2021-01-12 | 三菱电机株式会社 | 碳化硅外延生长装置及碳化硅外延晶片的制造方法 |
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JP2015141966A (ja) | 2015-08-03 |
WO2015114896A1 (ja) | 2015-08-06 |
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