TW201546924A - Height detecting apparatus - Google Patents
Height detecting apparatus Download PDFInfo
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- TW201546924A TW201546924A TW104107426A TW104107426A TW201546924A TW 201546924 A TW201546924 A TW 201546924A TW 104107426 A TW104107426 A TW 104107426A TW 104107426 A TW104107426 A TW 104107426A TW 201546924 A TW201546924 A TW 201546924A
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- 238000010408 sweeping Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 52
- 230000007246 mechanism Effects 0.000 description 11
- 238000001514 detection method Methods 0.000 description 9
- 238000003384 imaging method Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000002407 reforming Methods 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 229910009372 YVO4 Inorganic materials 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
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- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
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- 229920003002 synthetic resin Polymers 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0608—Height gauges
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/50—Using chromatic effects to achieve wavelength-dependent depth resolution
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Laser Beam Processing (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
本發明是有關於一種用以檢測保持在裝配於雷射加工機等加工機之工作夾台上之半導體晶圓等被加工物之高度位置的高度位置檢測裝置。 The present invention relates to a height position detecting device for detecting a height position of a workpiece such as a semiconductor wafer mounted on a work chuck of a processing machine such as a laser processing machine.
在半導體晶圓製程中,是在呈略圓板狀的半導體晶圓表面上由排列成格子狀之分割預定線劃分成複數個區域,並在這些劃分的區域中形成IC、LSI等裝置。而且,藉由沿著分割預定線將半導體晶圓切斷而分割形成器件的區域,以製造出一個個半導體器件。 In the semiconductor wafer process, a plurality of regions are divided by a predetermined dividing line arranged in a lattice shape on a surface of a substantially disk-shaped semiconductor wafer, and devices such as ICs and LSIs are formed in the divided regions. Further, the regions in which the devices are formed are divided by cutting the semiconductor wafer along the dividing line to manufacture individual semiconductor devices.
作為沿著上述半導體晶圓等之分割預定線分割的方法,已嘗試使用對晶圓具有穿透性之脈衝雷射光線,將聚光點對位於用來分割之區域的內部而照射脈衝雷射光線之雷射加工方法。使用該雷射加工方法之分割方法是從晶圓之其中一面側將聚光點對位於內部,而照射對晶圓具有穿透性之例如波長為1064nm的脈衝雷射光線,以在晶圓的內部沿著分割預定線連續地形成改質層,再沿著因為形成該改質層而使強度降低之分割預定線施加外力,藉此以 將被加工物分割(參照例如專利文獻1)。如此當沿著形成於被加工物上之分割預定線而在內部形成改質層時,將雷射光線之聚光點從被加工物之上面定位於預定之深度位置是很重要的。 As a method of dividing along a predetermined dividing line of the above-mentioned semiconductor wafer or the like, it has been attempted to irradiate a pulsed laser by using a pulsed laser beam having transparency to the wafer, and concentrating the focused spot on the inside of the region for division. Laser processing method of light. The method of segmentation using the laser processing method is to align the spot of the spot from one side of the wafer and irradiate the pulsed laser light having a wavelength of 1064 nm, for example, on the wafer. The reforming layer is continuously formed along the dividing line, and an external force is applied along the dividing line that reduces the strength due to the formation of the modifying layer. The workpiece is divided (see, for example, Patent Document 1). Thus, when the reforming layer is formed inside along the dividing line formed on the workpiece, it is important to position the spot of the laser light from the upper side of the workpiece at a predetermined depth position.
又,作為分割半導體晶圓等之板狀被加工物的方法,已有藉由沿著形成於被加工物上之分割預定線照射脈衝雷射光線而形成雷射加工溝,再透過機械破斷裝置沿著該雷射加工溝割斷的方法被提出(參照例如專利文獻2)。如此沿著形成於被加工物上之分割預定線而形成雷射加工溝時,將雷射光線之聚光點定位於被加工物之預定高度位置也是很重要的。 Further, as a method of dividing a plate-shaped workpiece such as a semiconductor wafer, a laser processing light is formed by irradiating a pulsed laser beam along a predetermined dividing line formed on a workpiece, and then mechanically broken. A method in which the device is cut along the laser processing groove is proposed (see, for example, Patent Document 2). When the laser processing groove is formed along the planned dividing line formed on the workpiece, it is also important to position the light collecting point of the laser light at a predetermined height position of the workpiece.
然而,因為半導體晶圓等之板狀加工物上會有隆起而其厚度不均,因此難以施以均一的雷射加工。也就是說,當沿著分割預定線將改質層形成於晶圓內部時,如果晶圓的厚度不平均,就會因為照射雷射光線時的折射率的關係而無法在預定的深度位置均一地形成改質層。又,若沿著形成於晶圓上之分割預定線形成雷射加工溝的情況中,也是其厚度不平均時,就無法形成均一深度的雷射加工溝。 However, since the plate-like workpiece such as a semiconductor wafer has a bulge and its thickness is uneven, it is difficult to apply uniform laser processing. That is to say, when the modified layer is formed inside the wafer along the dividing line, if the thickness of the wafer is not uniform, it is impossible to be uniform at a predetermined depth position due to the refractive index when irradiating the laser light. The ground layer is formed into a modified layer. Further, in the case where the laser processing grooves are formed along the planned dividing line formed on the wafer, even if the thickness is not uniform, it is impossible to form a laser processing groove having a uniform depth.
為了解決上述問題,在下述專利文獻3揭示了可檢測出保持於工作夾台上之半導體晶圓等之被加工物的上面高度之高度位置檢測裝置。 In order to solve the above problem, Patent Document 3 listed below discloses a height position detecting device that can detect the height of the upper surface of a workpiece such as a semiconductor wafer held on a work chuck.
專利文獻1:日本專利特許第3408805號公報 Patent Document 1: Japanese Patent No. 3408805
專利文獻2:日本專利特開2010-272697號公報 Patent Document 2: Japanese Patent Laid-Open Publication No. 2010-272697
專利文獻3:日本專利特開2011-82354號公報 Patent Document 3: Japanese Patent Laid-Open Publication No. 2011-82354
然而,如上述專利文獻3所揭示的高度位置檢測裝置,因為是由發光手段斜射的光在被加工物上面反射,再依其反射光的受光位置檢測出高度位置的技術,因此會有因高度變化而照射在偏離分割預定線的位置上,無法檢測出正確位置之上面高度的問題。 However, the height position detecting device disclosed in Patent Document 3 has a technique in which the light obliquely reflected by the light-emitting means is reflected on the workpiece and the height position is detected depending on the light-receiving position of the reflected light. The change is irradiated at a position deviating from the planned dividing line, and the problem of the upper height of the correct position cannot be detected.
本發明是有鑒於上述事實而作成的,其主要之技術課題為提供一種高度位置檢測裝置,該高度位置檢測裝置可正確地檢測出保持在被加工物保持手段上之半導體晶圓等被加工物中所設定區域之高度位置。 The present invention has been made in view of the above circumstances, and a main technical object thereof is to provide a height position detecting device that can accurately detect a workpiece such as a semiconductor wafer held on a workpiece holding means. The height position of the area set in .
為解決上述主要之技術課題,根據本發明,提供一種高度位置檢測裝置,具備:保持被加工物之被加工物保持手段、檢測保持於該被加工物保持手段之被加工物的高度位置之高度位置檢測手段、以及使該被加工物保持手段和該高度位置檢測手段相對移動之移動手段。其特徵在於:該高度位置檢測手段具備:具有預定之波長頻帶的光源;傳送由該光源所發出之光的第1單模光纖;與該第1單模光纖連結之光纖耦合器;在該光源和該光纖耦合器之間 連接該第1單模光纖,且由該波長頻帶將單一波長的光以預定之週期依序掃描並傳送的法比-培羅特可調式濾波器(Fabry-Perot tunable filter);將由該法比-培羅特可調式濾波器發出之單一波長的光聚光並將其照射於保持在該被加工物保持手段上之被加工物上的色差透鏡;傳送在被加工物上反射並透過該色差透鏡在該光纖耦合器分歧之回授光的第2單模光纖;接收由該第2單模光纖發出之回授光並將與所接收之光的強度對應的信號輸出的光接收元件;以及具備用以儲存設定有波長和高度關係之表之記憶體的控制手段。該控制手段可與該法比-培羅特可調式濾波器掃描單一波長的光之預定周期同步,求出該光接收元件所接收之單一波長的光的波長,再藉由將該波長與記錄於該表之波長和高度對照,求出保持於該被加工物保持手段之被加工物的高度位置。 In order to solve the above-mentioned main problems, the present invention provides a height position detecting device including: a workpiece holding means for holding a workpiece, and a height at a height position of a workpiece held and held by the workpiece holding means The position detecting means and the moving means for relatively moving the workpiece holding means and the height position detecting means. The height position detecting means includes: a light source having a predetermined wavelength band; a first single mode fiber that transmits light emitted by the light source; and a fiber coupler coupled to the first single mode fiber; Between the fiber coupler and the fiber coupler a Fabry-Perot tunable filter that connects the first single-mode fiber and sequentially scans and transmits a single wavelength of light at a predetermined period in the wavelength band; a chromatic aberration lens that illuminates a single wavelength of light emitted by the Pelott tunable filter and illuminates it on a workpiece held on the workpiece holding means; the reflection is reflected on the workpiece and transmitted through the chromatic aberration a second single mode fiber in which the lens is diffracted by the fiber coupler, and a light receiving element that receives the feedback light emitted from the second single mode fiber and outputs a signal corresponding to the intensity of the received light; There is a control means for storing a memory having a table in which wavelength and height are set. The control means can synchronize the predetermined period of the single-wavelength light with the Fabry-Perot tunable filter to determine the wavelength of the single-wavelength light received by the light-receiving element, and then record the wavelength and record The height position of the workpiece held by the workpiece holding means is obtained by comparing the wavelength and the height of the table.
較佳的是,令上述移動手段進行之被加工物保持手段和高度位置檢測手段的相對移動方向為X座標時,控制手段會對應於X座標,求出保持於被加工物保持手段之被加工物的高度位置,且儲存於記憶體中。 Preferably, when the relative movement direction of the workpiece holding means and the height position detecting means by the moving means is the X coordinate, the control means determines the workpiece to be processed by the workpiece holding means in accordance with the X coordinate. The height position of the object and stored in the memory.
較佳的是,上述高度位置檢測手段裝配於加工機,前述加工機由下述所構成:用以保持被加工物之被加工物保持手段、對保持於被加工物保持手段之被加工物施以加工之加工手段、使被加工物保持手段和加工手段往X軸方向相對移動之X軸移動手段、以及使被加工物保持手段和加工手段往與X軸方向直交之Y軸方向相對移動的Y軸移動手段。 Preferably, the height position detecting means is attached to a processing machine, and the processing machine is configured to hold a workpiece holding means for holding a workpiece and to apply a workpiece to be held by the workpiece holding means. The machining means, the X-axis moving means for relatively moving the workpiece holding means and the processing means in the X-axis direction, and the workpiece holding means and the processing means relatively moving in the Y-axis direction orthogonal to the X-axis direction Y-axis moving means.
根據本發明之高度位置檢測裝置,由於控制手段可與法比-培羅特可調式濾波器掃描單一波長的光之預定周期同步,求出光接收元件所接收之單一波長的光的波長,並將波長與記錄於該表的波長和高度對照,以求出保持於該被加工物保持手段上之被加工物的高度位置,因此可以解決光照射在偏離被加工物之檢測位置的位置並檢測到偏離檢測位置的位置之高度的問題。 According to the height position detecting device of the present invention, since the control means can synchronize the predetermined period of the light of the single wavelength with the Fabi-Perot adjustable filter, the wavelength of the light of the single wavelength received by the light receiving element is obtained, and The wavelength is compared with the wavelength and height recorded in the table to determine the height position of the workpiece held by the workpiece holding means, so that the position of the light irradiation at the detection position deviating from the workpiece can be solved and detected. The problem of the height to the position deviating from the detection position.
1‧‧‧雷射加工機 1‧‧ ‧ laser processing machine
2‧‧‧靜止基台 2‧‧‧Standing abutment
3‧‧‧工作夾台機構 3‧‧‧Working table mechanism
31、322、41、423‧‧‧導軌 31, 322, 41, 423 ‧ ‧ rails
32‧‧‧第1滑塊 32‧‧‧1st slider
321、331、511‧‧‧被導引槽 321, 331, 511‧‧‧ guided slots
33‧‧‧第2滑塊 33‧‧‧2nd slider
34‧‧‧圓筒構件 34‧‧‧Cylinder components
35‧‧‧蓋板 35‧‧‧ Cover
36‧‧‧工作夾台 36‧‧‧Working table
361‧‧‧吸附夾頭 361‧‧‧Adsorption chuck
362‧‧‧夾具 362‧‧‧ fixture
37‧‧‧X軸移動手段 37‧‧‧X-axis moving means
37‧‧‧加工進給手段 37‧‧‧Processing means of feeding
371、381、431‧‧‧公螺桿 371, 381, 431‧‧ ‧ male screw
372、382、432、532‧‧‧脈衝馬達 372, 382, 432, 532‧‧ pulse motor
373、383‧‧‧軸承塊 373, 383‧ ‧ bearing blocks
374‧‧‧X軸方向位置檢出手段 374‧‧‧X-axis position detection means
374a、384a、551‧‧‧線性標度尺 374a, 384a, 551‧‧‧ linear scales
374b、384b、552‧‧‧讀取頭 374b, 384b, 552‧‧ ‧ read head
38‧‧‧第1Y軸移動手段 38‧‧‧1st Y-axis moving means
384‧‧‧Y軸方向位置檢測手段 384‧‧‧Y-axis position detection means
4‧‧‧雷射光線照射單元支撐機構 4‧‧‧Laser light irradiation unit support mechanism
42‧‧‧可動支撐基台 42‧‧‧ movable support abutment
421‧‧‧移動支撐部 421‧‧‧Mobile Support
422‧‧‧裝設部 422‧‧‧Installation Department
43‧‧‧第2Y軸移動手段 43‧‧‧2nd Y-axis moving means
5‧‧‧雷射光線照射單元 5‧‧‧Laser light irradiation unit
51‧‧‧單元夾持器 51‧‧‧Unit holder
52‧‧‧雷射光線照射手段 52‧‧‧Laser light exposure
521‧‧‧套管 521‧‧‧ casing
522‧‧‧聚光器 522‧‧‧ concentrator
53‧‧‧Z軸移動手段 53‧‧‧Z-axis moving means
55‧‧‧Z軸方向位置檢測手段 55‧‧‧Z-axis direction detection means
6‧‧‧攝像手段 6‧‧‧Photography
7‧‧‧高度位置檢測裝置 7‧‧‧ Height position detecting device
70‧‧‧高度位置檢測手段 70‧‧‧ Height position detection means
71‧‧‧光源 71‧‧‧Light source
72‧‧‧第1單模光纖 72‧‧‧1st single mode fiber
73‧‧‧光纖耦合器 73‧‧‧Fiber coupler
74‧‧‧法比-培羅特可調式濾波器 74‧‧‧Fabe-Perot Adjustable Filter
75‧‧‧色差透鏡 75‧‧‧chromatic aberration lens
76‧‧‧交流電源施加手段 76‧‧‧AC power supply means
77‧‧‧第2單模光纖 77‧‧‧2nd single mode fiber
78‧‧‧放大器 78‧‧‧Amplifier
79‧‧‧光接收元件 79‧‧‧Light receiving components
9‧‧‧控制手段 9‧‧‧Control means
91‧‧‧中央處理裝置 91‧‧‧Central processing unit
92‧‧‧唯讀記憶體 92‧‧‧Read-only memory
93、103‧‧‧隨機存取記憶體 93, 103‧‧‧ Random access memory
93a‧‧‧第1記憶區域 93a‧‧‧1st memory area
93b‧‧‧第2記憶區域 93b‧‧‧2nd memory area
93c、103c‧‧‧第3記憶區域 93c, 103c‧‧‧3rd memory area
94‧‧‧輸入介面 94‧‧‧Input interface
95‧‧‧輸出介面 95‧‧‧Output interface
10‧‧‧半導體晶圓 10‧‧‧Semiconductor wafer
10a‧‧‧表面 10a‧‧‧ surface
10b‧‧‧背面 10b‧‧‧back
101‧‧‧分割預定線 101‧‧‧ dividing line
102‧‧‧器件 102‧‧‧Device
F‧‧‧環狀框架 F‧‧‧Ring frame
T‧‧‧保護膠帶 T‧‧‧Protection tape
W‧‧‧被加工物 W‧‧‧Processed objects
圖1是裝配了依照本發明所構成之高度位置檢測裝置的雷射加工機的立體圖。 BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a perspective view of a laser processing machine equipped with a height position detecting device constructed in accordance with the present invention.
圖2是顯示裝配於圖1所示之雷射加工機的高度位置檢測裝置之構成的方塊圖。 Fig. 2 is a block diagram showing the configuration of a height position detecting device mounted in the laser processing machine shown in Fig. 1.
圖3是顯示沿著施加於構成圖2所示之高度位置檢測裝置的法比-培羅特可調式濾波器之交流波,以預定週期依序掃描並傳送各波長的光之狀態的說明圖。 3 is an explanatory view showing a state in which an alternating wave applied to a Fabry-Perot-adjustable filter constituting the height position detecting device shown in FIG. 2 sequentially scans and transmits light of each wavelength at a predetermined cycle. .
圖4是顯示構成圖2所示之高度位置檢測裝置的色差透鏡之聚光狀態的說明圖。 Fig. 4 is an explanatory view showing a condensed state of a chromatic aberration lens constituting the height position detecting device shown in Fig. 2;
圖5是裝配於圖1所示之雷射加工機之控制手段的方塊構成圖。 Fig. 5 is a block diagram showing the control means of the laser processing machine shown in Fig. 1.
圖6是設定波長和高度之關係的控制表。 Fig. 6 is a control table for setting the relationship between the wavelength and the height.
圖7是作為被加工物之半導體晶圓的立體圖。 Fig. 7 is a perspective view of a semiconductor wafer as a workpiece.
圖8是顯示圖7所示之半導體晶圓黏貼在裝設於環狀框架之保護膠帶的狀態的立體圖。 Fig. 8 is a perspective view showing a state in which the semiconductor wafer shown in Fig. 7 is adhered to a protective tape attached to an annular frame.
圖9(a)、(b)是顯示圖7所示之半導體晶圓保持於圖1所示之雷射加工機的工作夾台的預定位置之狀態中的座標位置之關係的說明圖。 FIGS. 9(a) and 9(b) are explanatory diagrams showing the relationship of the coordinate position in a state in which the semiconductor wafer shown in FIG. 7 is held at a predetermined position of the working chuck of the laser processing machine shown in FIG. 1.
圖10是顯示了相對於和根據圖2所示之高度位置檢測裝置所檢測出的高度位置數據而作成之XY座標對應之基準位置之偏差的說明圖。 Fig. 10 is an explanatory view showing a deviation from a reference position corresponding to an XY coordinate created based on height position data detected by the height position detecting device shown in Fig. 2;
圖11是以裝配於圖1所示之雷射加工機的高度位置檢測裝置所實施的高度位置檢測步驟的說明圖。 Fig. 11 is an explanatory view showing a height position detecting step performed by the height position detecting device of the laser processing machine shown in Fig. 1.
圖12(a)、(b)是透過圖1所示之雷射加工機在圖7所示之半導體晶圓上形成改質層之雷射加工步驟的說明圖。 12(a) and 12(b) are explanatory views showing a laser processing step of forming a modified layer on the semiconductor wafer shown in Fig. 7 by the laser processing machine shown in Fig. 1.
以下,參照附圖詳細地說明依照本發明所構成的高度位置檢測裝置之較佳的實施形態。 DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of a height position detecting device constructed in accordance with the present invention will be described in detail with reference to the accompanying drawings.
圖1中,顯示了作為裝配有依照本發明所構成之高度位置檢測裝置的加工機之雷射加工機1的立體圖。圖1所示之雷射加工機1具備:靜止基台2;可在沿箭頭X所示之X軸方向上移動地配置於該靜止基台2,並用於保持被加工物的工作夾台機構3;可在與箭頭X所示之X軸方向直交之以箭頭Y所示之Y軸方向上移動地配置於該靜止基台2的雷射光線照射單元支撐機構4;以及可在箭頭Z所示之Z軸方向上移動地配置於該雷射光線照射單元支撐機構4的雷射光線照射單元5。 In Fig. 1, a perspective view of a laser processing machine 1 as a processing machine equipped with a height position detecting device constructed in accordance with the present invention is shown. The laser processing machine 1 shown in Fig. 1 includes a stationary base 2, a movable clamping mechanism that is movable on the stationary base 2 in the X-axis direction indicated by an arrow X, and is used to hold the workpiece. 3; a laser beam irradiation unit supporting mechanism 4 disposed on the stationary base 2 in a Y-axis direction orthogonal to the X-axis direction indicated by an arrow X; and The laser beam irradiation unit 5 of the laser beam irradiation unit support mechanism 4 is disposed to move in the Z-axis direction.
上述工作夾台機構3具備:在靜止基台2上沿著X 軸方向平行配置的一對導軌31、31;配置成可在該導軌31、31上於X軸方向上移動之第1滑塊32;配置成可在該第1滑塊32上於Y軸方向上移動之第2滑塊33;由圓筒構件34支撐於該第2滑塊33上的蓋板35;及作為被加工物保持手段的工作夾台36。該工作夾台36具有由多孔性材料所形成之吸附夾頭361,並形成為以未圖示之吸引手段將被加工物之例如圓盤狀之半導體晶圓保持於吸附夾頭361上。如此所構成之工作夾台36藉由配置於圓筒構件34內之未圖示的脈衝馬達而得以旋轉。再者,工作夾台36上配設有用於固定後述之環狀框架的夾具362。 The above working clamping mechanism 3 is provided along the X on the stationary base 2 a pair of guide rails 31 and 31 arranged in parallel in the axial direction; a first slider 32 arranged to be movable in the X-axis direction on the guide rails 31 and 31; and arranged in the Y-axis direction on the first slider 32 The second slider 33 that moves upward, the cover plate 35 that is supported by the cylindrical member 34 on the second slider 33, and the work chuck 36 that is a workpiece holding means. The work chuck 36 has an adsorption chuck 361 formed of a porous material, and is formed to hold a semiconductor wafer of a workpiece such as a disk shape on the adsorption chuck 361 by a suction means (not shown). The work chuck 36 configured as described above is rotated by a pulse motor (not shown) disposed in the cylindrical member 34. Further, a clamp 362 for fixing an annular frame to be described later is disposed on the work chuck 36.
上述第1滑塊32於其下面設有與上述一對導軌31、31嵌合的一對被導引槽321、321,並且於其上面設有沿Y軸方向平行地形成之一對導軌322、322。如此所構成的第1滑塊32藉由被導引槽321、321嵌合在一對導軌31、31上,構成為可沿一對導軌31、31在X軸方向上移動。本實施形態之工作夾台機構3具備用於使第1滑塊32沿著一對導軌31、31在X軸方向上移動之X軸移動手段37。X軸移動手段37包含有:平行配設於上述一對導軌31和31之間的公螺桿371、及用以驅動該公螺桿371旋轉之脈衝馬達372等驅動源。公螺桿371之其一端可自由旋轉地受固定於上述靜止基台2之軸承塊373所支撐,其另一端則與上述脈衝馬達372的輸出軸傳動連結。再者,公螺桿371螺合於貫通母螺孔,該貫通母螺孔形成於突出設置於第1滑塊32之中央部下面之圖未示的母螺塊。因此,藉由脈衝馬達372使公螺桿371正轉及 逆轉驅動,藉此可使第1滑塊32沿著導軌31、31在X軸方向上移動。 The first slider 32 is provided on the lower surface thereof with a pair of guided grooves 321 and 321 which are fitted to the pair of guide rails 31 and 31, and a pair of guide rails 322 are formed in parallel on the upper surface thereof in the Y-axis direction. 322. The first slider 32 configured as described above is fitted to the pair of guide rails 31 and 31 by the guide grooves 321 and 321 so as to be movable in the X-axis direction along the pair of guide rails 31 and 31. The work clamping mechanism 3 of the present embodiment includes an X-axis moving means 37 for moving the first slider 32 along the pair of guide rails 31, 31 in the X-axis direction. The X-axis moving means 37 includes a male screw 371 disposed in parallel between the pair of guide rails 31 and 31, and a drive source such as a pulse motor 372 for driving the male screw 371 to rotate. One end of the male screw 371 is rotatably supported by a bearing block 373 fixed to the stationary base 2, and the other end thereof is drivingly coupled to an output shaft of the pulse motor 372. Further, the male screw 371 is screwed into the through female screw hole, and the through female screw hole is formed in a female screw (not shown) which is protruded from the lower surface of the central portion of the first slider 32. Therefore, the male screw 371 is rotated forward by the pulse motor 372. By reverse driving, the first slider 32 can be moved in the X-axis direction along the guide rails 31 and 31.
雷射加工機1具備用以檢測出上述工作夾台36之X軸方向位置的X軸方向位置檢測手段374。X軸方向位置檢測手段374由沿著導軌31配置之線性標度尺374a、和配置於第1滑塊32上並且與第1滑塊32一起沿線性標度尺374a移動之讀取頭374b所構成。該X軸方向位置檢測手段374的讀取頭374b在圖示之實施形態中每1μm傳送1脈衝的脈衝信號至後述之控制手段。然後後述之控制手段計算輸入之脈衝信號,藉此檢測出工作夾台36之X軸方向位置。 The laser processing machine 1 is provided with an X-axis direction position detecting means 374 for detecting the position of the working chuck 36 in the X-axis direction. The X-axis direction position detecting means 374 is composed of a linear scale 374a disposed along the guide rail 31 and a reading head 374b disposed on the first slider 32 and moving along the linear scale 374a together with the first slider 32. Composition. In the illustrated embodiment, the read head 374b of the X-axis direction position detecting means 374 transmits a pulse signal of one pulse per 1 μm to a control means to be described later. Then, the control means described later calculates the input pulse signal, thereby detecting the position of the working chuck 36 in the X-axis direction.
上述第2滑塊33在其底面設置可與設置在上述第1滑塊32之上面的一對導軌322、322嵌合的一對被導引槽331、331,並構成為藉由將該被導引槽331、331嵌合至一對導軌322、322,而可在Y軸方向上移動。工作夾台機構3具備了用來使第2滑塊33沿著設置在第1滑塊32上的一對導軌322、322在Y軸方向上移動的第1Y軸移動手段38。第1Y軸移動手段38包含:平行配置在上述一對導軌322和322之間的公螺桿381、及用於驅動該公螺桿381旋轉的脈衝馬達382等的驅動源。公螺桿381之其一端可自由旋轉地由固定於上述第1滑塊32之上面的軸承塊383所支撐,其另一端則與上述脈衝馬達382的輸出軸傳動連結。再者,公螺桿381螺合於貫通母螺孔,該貫通母螺孔形成於突出設置於第2滑塊33之中央部下面的未圖示之母螺塊。因此,藉由以脈衝馬達382正轉及逆轉驅動公螺桿381,可使第2滑塊33沿著導 軌322、322在Y軸方向上移動。 The second slider 33 is provided on the bottom surface thereof with a pair of guided grooves 331 and 331 that are engageable with the pair of guide rails 322 and 322 provided on the upper surface of the first slider 32, and is configured to be The guide grooves 331, 331 are fitted to the pair of guide rails 322, 322 to be movable in the Y-axis direction. The work chuck mechanism 3 includes a first Y-axis moving means 38 for moving the second slider 33 along the pair of guide rails 322 and 322 provided on the first slider 32 in the Y-axis direction. The first Y-axis moving means 38 includes a male screw 381 which is disposed between the pair of guide rails 322 and 322 in parallel, and a drive source such as a pulse motor 382 for driving the rotation of the male screw 381. One end of the male screw 381 is rotatably supported by a bearing block 383 fixed to the upper surface of the first slider 32, and the other end thereof is drivingly coupled to an output shaft of the pulse motor 382. Further, the male screw 381 is screwed into the through female screw hole formed in a female nut (not shown) projecting from the lower surface of the central portion of the second slider 33. Therefore, by driving the male screw 381 by the forward rotation and the reverse rotation of the pulse motor 382, the second slider 33 can be guided along the guide. The rails 322, 322 move in the Y-axis direction.
雷射加工機1具備用以檢測上述第2滑塊33之Y軸方向位置的Y軸方向位置檢測手段384。Y軸方向位置檢測手段384由沿著導軌322配置之線性標度尺384a、及配置於第2滑塊33並且與第2滑塊33一起沿線性標度尺384a移動之讀取頭384b所構成。該Y軸方向位置檢測手段384的讀取頭384b在圖示之實施形態中每1μm傳送1脈衝的脈衝信號至後述之控制手段。然後後述之控制手段藉由計算輸入之脈衝信號,而檢測出工作夾台36之Y軸方向位置。 The laser processing machine 1 includes a Y-axis direction position detecting means 384 for detecting the position of the second slider 33 in the Y-axis direction. The Y-axis direction position detecting means 384 is composed of a linear scale 384a disposed along the guide rail 322 and a read head 384b disposed on the second slider 33 and moving along the linear scale 384a together with the second slider 33. . In the illustrated embodiment, the read head 384b of the Y-axis direction position detecting means 384 transmits a pulse signal of one pulse per 1 μm to a control means to be described later. Then, the control means described later detects the position of the working chuck 36 in the Y-axis direction by calculating the input pulse signal.
上述雷射光線照射單元支撐機構4具備:沿著以箭頭Y所示之分度進給方向(Y軸方向)平行配置在靜止基台2的一對導軌41、41;及可沿著以箭頭Y所示之方向移動地配置在該導軌41、41之可動支撐基台42。該可動支撐基台42由可移動地配置在導軌41、41之移動支撐部421、及組裝在該移動支撐部421之裝設部422所構成。裝設部422在一個側面設有朝箭頭Z所示之Z軸方向(聚光點位置調整方向)延伸之一對平行的導軌423、423。雷射光線照射單元支撐機構4具備用以使可動支撐基台42沿著一對導軌41、41在Y軸方向上移動之第2Y軸移動手段43。第2Y軸移動手段43包含平行配置在上述一對導軌41、41之間的公螺桿431、和用於驅動該公螺桿431旋轉的脈衝馬達432等的驅動源。公螺桿431之其一端由固定於上述靜止基台2之未圖示的軸承塊所支撐且可自由旋轉,其另一端則與上述脈衝馬達432的輸出軸傳動連結。再者,公螺桿431螺合於貫通母螺孔,該貫通 母螺孔形成於突出設置於構成可動支撐基台42之移動支撐部421的中央部下面之圖未示的母螺塊。因此,藉由以脈衝馬達432正轉及逆轉驅動公螺桿431,可使可動支撐基台42沿著導軌41、41在Y軸方向上移動。 The laser beam irradiation unit support mechanism 4 includes a pair of guide rails 41 and 41 arranged in parallel along the index feed direction (Y-axis direction) indicated by an arrow Y on the stationary base 2; The movable support base 42 of the guide rails 41, 41 is disposed in the direction indicated by Y. The movable support base 42 is composed of a movement support portion 421 that is movably disposed on the guide rails 41 and 41, and a mounting portion 422 that is assembled to the movement support portion 421. The mounting portion 422 is provided on one side surface with a pair of parallel guide rails 423 and 423 extending in the Z-axis direction (converging point position adjustment direction) indicated by an arrow Z. The laser beam irradiation unit support mechanism 4 includes a second Y-axis moving means 43 for moving the movable supporting base 42 in the Y-axis direction along the pair of rails 41, 41. The second Y-axis moving means 43 includes a male screw 431 disposed in parallel between the pair of guide rails 41, 41, and a drive source such as a pulse motor 432 for driving the rotation of the male screw 431. One end of the male screw 431 is rotatably supported by a bearing block (not shown) fixed to the stationary base 2, and the other end thereof is drivingly coupled to the output shaft of the pulse motor 432. Furthermore, the male screw 431 is screwed into the through female screw hole, and the through screw The female screw hole is formed in a female nut (not shown) which is protruded from a central portion of the moving support portion 421 constituting the movable support base 42. Therefore, the movable support base 42 can be moved in the Y-axis direction along the guide rails 41, 41 by the forward rotation and the reverse rotation of the male screw 431 by the pulse motor 432.
本實施形態之雷射光線照射單元5具備:單元夾持器51、及安裝於該單元夾持器51上之雷射光線照射手段52。單元夾持器51設置有可與設置在上述裝設部422之一對導軌423、423滑動嵌合的一對被導引槽511、511,並藉由將該被導引槽511、511嵌合至一對導軌423、423,可移動地支撐於Z軸方向上。 The laser beam irradiation unit 5 of the present embodiment includes a unit holder 51 and a laser beam irradiation means 52 attached to the unit holder 51. The unit holder 51 is provided with a pair of guided grooves 511 and 511 slidably fitted to the pair of guide rails 423 and 423 provided in one of the mounting portions 422, and is embedded by the guided grooves 511 and 511. It is coupled to a pair of guide rails 423, 423 movably supported in the Z-axis direction.
雷射光線照射單元5具備用以使單元夾持器51沿著一對導軌423、423在Z軸方向上移動之Z軸移動手段53。Z軸移動手段53包含:配設在一對導軌423、423之間的公螺桿(未圖示);及用於驅動該公螺桿旋轉的脈衝馬達532等的驅動源,並藉由脈衝馬達532正轉及逆轉驅動未圖示之公螺桿,藉此可使單元夾持器51及雷射光線照射手段52沿著導軌423、423在Z軸方向上移動。再者,在本實施形態中,藉由驅動馬達532正轉,使雷射光線照射手段52移動至上方,並藉由驅動馬達532逆轉,使雷射光線照射手段52移動至下方。 The laser beam irradiation unit 5 is provided with a Z-axis moving means 53 for moving the unit holder 51 in the Z-axis direction along the pair of rails 423, 423. The Z-axis moving means 53 includes a male screw (not shown) disposed between the pair of guide rails 423 and 423, and a drive source for driving the pulse motor 532 or the like for rotating the male screw, and is provided by a pulse motor 532. The male screw (not shown) is driven in the forward rotation and the reverse rotation, whereby the unit holder 51 and the laser beam irradiation means 52 are moved in the Z-axis direction along the guide rails 423 and 423. Further, in the present embodiment, the laser light irradiation means 52 is moved upward by the forward rotation of the drive motor 532, and the laser light irradiation means 52 is moved downward by the drive motor 532 being reversed.
雷射光線照射單元5具備用以檢測雷射光線照射手段52之Z軸方向位置的Z軸方向位置檢測手段55。Z軸方向位置檢測手段55由與上述導軌423、423平行配置之線性標度尺551、及安裝於上述單元夾持器51並且與單元夾持器 51一起沿線性標度尺551移動之讀取頭552所構成。該Z軸方向位置檢測手段55的讀取頭552在圖示之實施形態中每1μm傳送1脈衝的脈衝信號至後述之控制手段。 The laser beam irradiation unit 5 includes a Z-axis direction position detecting means 55 for detecting the position of the laser beam irradiation means 52 in the Z-axis direction. The Z-axis direction position detecting means 55 is provided by a linear scale 551 disposed in parallel with the above-described guide rails 423, 423, and attached to the unit holder 51 and to the unit holder The 51 is formed by a read head 552 that moves along the linear scale 551. In the illustrated embodiment, the read head 552 of the Z-axis direction position detecting means 55 transmits a pulse signal of one pulse per 1 μm to a control means to be described later.
雷射光線照射手段52包含實質上配置成水平的圓筒狀之套管521。該套管521內配設有未圖示之脈衝雷射光線振盪手段,該脈衝雷射光線振盪手段具備由YAG雷射振盪器或YVO4雷射振盪器所構成之脈衝雷射光線振盪器或重複頻率設定手段。上述套管521的前端部裝設有用以將雷射光線振盪手段所振盪出的脈衝雷射光線聚光的聚光器522。 The laser beam irradiation means 52 includes a cylindrical sleeve 521 which is substantially horizontally arranged. A pulsed laser ray oscillating means (not shown) is disposed in the sleeve 521, and the pulsed laser ray oscillating means is provided with a pulsed laser ray oscillator or a repeater composed of a YAG laser oscillator or a YVO4 laser oscillator Frequency setting means. The front end portion of the sleeve 521 is provided with a concentrator 522 for collecting the pulsed laser light oscillated by the laser beam oscillating means.
在構成上述雷射光線照射手段52之套管521的前端部,配置有藉由雷射光線照射手段52檢測用來雷射加工之加工區域之攝像手段6。該攝像手段6除了以可見光進行拍攝之一般攝像元件(CCD)之外,還具有可對被加工物照射紅外線之紅外線照明手段、可捕捉到該紅外線照明手段所照射的紅外線之光學系統、及輸出對應於可由該光學系統所捕捉到的紅外線之電信號的攝像元件(紅外線CCD)等構成,並可將所拍攝到之圖像信號傳送至後述之控制機構。 At the front end portion of the sleeve 521 constituting the above-described laser beam irradiation means 52, an imaging means 6 for detecting a processing area for laser processing by the laser beam irradiation means 52 is disposed. In addition to a general imaging element (CCD) that images in visible light, the imaging device 6 has an infrared illumination device that can irradiate infrared rays to a workpiece, an optical system that can capture infrared rays that are irradiated by the infrared illumination device, and an output. The image pickup device (infrared CCD) or the like corresponding to the electric signal of the infrared ray captured by the optical system is configured, and the captured image signal can be transmitted to a control mechanism to be described later.
又,在構成上述雷射光線照射手段52之套管521的前端部,配置有用以檢測保持於工作夾台36之被加工物的上面高度位置之高度位置檢測裝置7。該高度位置檢測裝置7具備如圖2所示之高度位置檢測手段70。圖2所示之高度位置檢測手段70具備:具有預定之波長頻帶之光源71;傳送由該光源71所發出之光的第1單模光纖72;與該第1單模 光纖72連結之光纖耦合器73;在光源71和光纖耦合器73之間連接第1單模光纖72,且由波長頻帶將單一波長的光以預定之週期依序掃描並傳送之法比-培羅特可調式濾波器74;以及將由該法比-培羅特可調式濾波器74發出之單一波長的光聚光並照射於保持在工作夾台36上之被加工物W上的色差透鏡75。又,上述光源71發出波長頻帶為例如300~900nm的光。上述法比-培羅特可調式濾波器74連接於預定頻率(例如50kHz)之交流電源施加手段76,且如圖3所示,沿著交流波以預定週期依序掃描並傳送各波長的光。再者,沿著交流波之各波長的光宜使用交流波之接近直線的區域之400~800nm。又,如圖4所示,上述色差透鏡75發揮使聚光點位置因應於入射之光的波長而不同的功能,例如波長為400nm的光聚光於P1,波長為600nm的光聚光於P2,波長為800nm的光聚光於P3。再者,圖示之實施形態中,以波長為600nm的聚光點P2為中心,波長為400nm之聚光點P1和波長為800nm之聚光點P3之間隔設定為100μm。 Further, a height position detecting device 7 for detecting the height of the upper surface of the workpiece held by the work chuck 36 is disposed at the front end portion of the sleeve 521 constituting the laser beam irradiation means 52. The height position detecting device 7 includes a height position detecting means 70 as shown in FIG. The height position detecting means 70 shown in Fig. 2 includes: a light source 71 having a predetermined wavelength band; and a first single mode fiber 72 for transmitting light emitted from the light source 71; and the first single mode The optical fiber coupler 73 is connected to the optical fiber 72; the first single-mode optical fiber 72 is connected between the light source 71 and the optical fiber coupler 73, and the single-wavelength light is sequentially scanned and transmitted by the wavelength band in a predetermined cycle. a Rotary tunable filter 74; and a chromatic aberration lens 75 that condenses and illuminates a single wavelength of light emitted by the Fabry-Perot tunable filter 74 onto the workpiece W held on the working chuck 36 . Further, the light source 71 emits light having a wavelength band of, for example, 300 to 900 nm. The above-described Biot-Perot tunable filter 74 is connected to an AC power application means 76 of a predetermined frequency (for example, 50 kHz), and as shown in FIG. 3, sequentially scans and transmits light of each wavelength at a predetermined cycle along the alternating wave. . Further, it is preferable to use 400 to 800 nm of a region close to a straight line of an alternating wave along the light of each wavelength of the alternating wave. Further, as shown in FIG. 4, the chromatic aberration lens 75 functions to make the position of the condensed spot different depending on the wavelength of the incident light. For example, light having a wavelength of 400 nm is condensed on P1, and light having a wavelength of 600 nm is condensed on P2. Light having a wavelength of 800 nm is concentrated on P3. Further, in the illustrated embodiment, the interval between the condensed spot P1 having a wavelength of 400 nm and the condensed spot P3 having a wavelength of 800 nm is set to 100 μm centering on the condensed spot P2 having a wavelength of 600 nm.
參照圖2繼續說明,經由上述色差透鏡75照射且在被加工物W之上面反射之回授光透過色差透鏡75被引導至光纖耦合器73。圖示之高度位置檢測手段70具備:用以傳送被引導至光纖耦合器73而分歧之回授光的第2單模光纖77;將從該第2單模光纖77發出之回授光放大的放大器78;及接收以該放大器78所放大之回授光並將對應於接收之光的強度的信號輸出的光接收元件79,光接收元件79則將對應於接收到之回授光的各波長之光強度傳送至後述的控制 手段。 Continuing with the description of FIG. 2, the feedback light that is irradiated through the chromatic aberration lens 75 and reflected on the workpiece W is transmitted through the chromatic aberration lens 75 to the optical fiber coupler 73. The height position detecting means 70 shown in the drawing includes a second single-mode optical fiber 77 for transmitting light that is guided to the optical fiber coupler 73 and diverging light, and a light-receiving light emitted from the second single-mode optical fiber 77. An amplifier 78; and a light receiving element 79 that receives the feedback light amplified by the amplifier 78 and outputs a signal corresponding to the intensity of the received light, and the light receiving element 79 corresponds to each wavelength of the received feedback light. The light intensity is transmitted to the control described later means.
雷射加工機1具備圖5所示之控制手段9。控制手段9由電腦所構成,具備:按照控制程式進行演算處理之中央處理裝置(CPU)91、儲存控制程式等之唯讀記憶體(ROM)92、可將演算結果儲存之可讀寫之隨機存取記憶體(RAM)93、輸入介面94、以及輸出介面95。可於控制手段9的輸入介面94輸入來自上述X軸方向位置檢測手段374、Y軸方向位置檢測手段384、Z軸移動手段53、攝像手段6、光接收元件79等之檢測信號。然後,從控制手段9的輸出介面95輸出控制信號到上述脈衝馬達372、脈衝馬達382、脈衝馬達432、脈衝馬達532、以及雷射光線照射手段52等。再者,上述隨機存取記憶體(RAM)93具備:用以儲存圖6所示之設定波長和高度關係之控制表的第1記憶區域93a、記憶後述被加工物之設計值數據的第2記憶區域93b、記憶對於後述被加工物之XY座標之基準位置之偏差的第3記憶區域93c、或其他之記憶區域。再者,圖6所示之設定有波長和高度關係的控制表是令波長為600nm時所設定之高度位置為(0),在波長較600nm短時為+(μm),波長較600nm長時為-(μm)。如此所構成之控制手段9可與上述法比-培羅特可調式濾波器74掃描單一波長的光之預定周期同步,求出光接收元件79所接收之波長中光強度最強的波長,並且將該波長和圖6所示之控制表所設定的波長和高度對照,藉此求出相對於保持於工作夾台36之被加工物W的高度位置、亦即相對於波長為600nm時所設定之高度位置(0)(基準位置)的 偏差。 The laser processing machine 1 is provided with the control means 9 shown in FIG. The control means 9 is composed of a computer, and includes a central processing unit (CPU) 91 that performs arithmetic processing in accordance with a control program, a read-only memory (ROM) 92 that stores a control program, and the like, and a readable and writable random number that can store the calculation result. An access memory (RAM) 93, an input interface 94, and an output interface 95 are provided. A detection signal from the X-axis direction position detecting means 374, the Y-axis direction position detecting means 384, the Z-axis moving means 53, the imaging means 6, the light receiving element 79, and the like can be input to the input interface 94 of the control means 9. Then, a control signal is outputted from the output interface 95 of the control means 9 to the pulse motor 372, the pulse motor 382, the pulse motor 432, the pulse motor 532, the laser beam irradiation means 52, and the like. Further, the random access memory (RAM) 93 includes a first memory area 93a for storing a control table of a set wavelength and a height relationship shown in FIG. 6, and a second memory design data for storing a workpiece to be described later. The memory area 93b stores a third memory area 93c that deviates from the reference position of the XY coordinates of the workpiece to be described later, or another memory area. Further, the control table in which the relationship between the wavelength and the height is set as shown in FIG. 6 is such that the height position set at a wavelength of 600 nm is (0), and when the wavelength is shorter than 600 nm, it is + (μm), and when the wavelength is longer than 600 nm. Is -(μm). The control means 9 thus constructed can be synchronized with a predetermined period in which the above-described Fabi-Perot adjustable filter 74 scans light of a single wavelength, and obtains the wavelength of the light having the strongest intensity among the wavelengths received by the light receiving element 79, and This wavelength is compared with the wavelength and height set by the control table shown in FIG. 6, thereby obtaining the height position with respect to the workpiece W held by the work chuck 36, that is, when the wavelength is 600 nm. Height position (0) (reference position) deviation.
裝配有高度位置檢測裝置7的雷射加工機1是如上構成,且以下針對其作用進行說明。圖7顯示了作為被加工物之半導體晶圓的立體圖。圖7所示之半導體晶圓10是由例如厚度為200μm的矽晶圓所製成,並在表面10a上藉由形成為格子狀之複數條分割預定線101所劃分出的複數個區域中形成IC、LSI等器件102。如此所形成之半導體晶圓10如圖8所示,於表面10a側黏貼裝設在環狀框架F之由聚烯烴(polyolefin)等合成樹脂片所構成之例如厚度為300μm的保護膠帶T(保護膠帶黏貼步驟)。因此,半導體晶圓10之背面10b為上側。 The laser processing machine 1 equipped with the height position detecting device 7 has the above configuration, and the operation thereof will be described below. Fig. 7 shows a perspective view of a semiconductor wafer as a workpiece. The semiconductor wafer 10 shown in FIG. 7 is formed of, for example, a germanium wafer having a thickness of 200 μm, and is formed on a plurality of regions defined by a plurality of predetermined dividing lines 101 formed in a lattice shape on the surface 10a. Device 102 such as IC or LSI. As shown in FIG. 8, the semiconductor wafer 10 thus formed is adhered to a protective tape T having a thickness of 300 μm, which is made of a synthetic resin sheet such as polyolefin, which is attached to the annular frame F, on the surface 10a side. Tape sticking step). Therefore, the back surface 10b of the semiconductor wafer 10 is the upper side.
針對使用上述之雷射加工裝置1,沿著上述半導體晶圓10之分割預定線101照射雷射光線,並沿著分割預定線101在半導體晶圓10內部形成改質層之雷射加工的實施形態進行說明。再者,在半導體晶圓10內部形成改質層時,如果半導體晶圓的厚度不均勻,就會無法在預定深度上均一地形成改質層。因此,在施行雷射加工前,會透過上述高度位置檢測裝置7測量保持於工作夾台36上之半導體晶圓10的上面高度位置。 With respect to the laser processing apparatus 1 described above, laser light is irradiated along the dividing line 101 of the semiconductor wafer 10, and laser processing of forming a modified layer is formed inside the semiconductor wafer 10 along the dividing line 101. The form is explained. Further, when the modified layer is formed inside the semiconductor wafer 10, if the thickness of the semiconductor wafer is not uniform, the modified layer cannot be uniformly formed at a predetermined depth. Therefore, the height position of the upper surface of the semiconductor wafer 10 held on the work chuck 36 is measured by the above-described height position detecting device 7 before the laser processing is performed.
為了測量保持於工作夾台36上之半導體晶圓10的上面高度位置,首先將半導體晶圓10的保護膠帶T側載置於上述圖1所示之雷射加工機的工作夾台36上。然後,藉由將圖未示之吸引手段作動,隔著保護膠帶T將半導體晶圓10吸引保持在工作夾台36上(晶圓保持步驟)。因此,隔著保護 膠帶T保持於工作夾台36上的半導體晶圓10的背面10b為上側。如此進行,只要實施了晶圓保持步驟,就可以使加工進給手段37作動而將吸引保持半導體晶圓10的工作夾台36定位到攝像手段6的正下方。 In order to measure the height position of the semiconductor wafer 10 held on the work chuck 36, the protective tape T side of the semiconductor wafer 10 is first placed on the work chuck 36 of the laser processing machine shown in Fig. 1 described above. Then, by driving the suction means not shown, the semiconductor wafer 10 is sucked and held on the work chuck 36 via the protective tape T (wafer holding step). Therefore, protection The back surface 10b of the semiconductor wafer 10 on which the tape T is held on the work chuck 36 is on the upper side. In this manner, as long as the wafer holding step is performed, the processing feed means 37 can be actuated to position the work chuck 36 that sucks and holds the semiconductor wafer 10 directly below the image pickup means 6.
當將工作夾台36定位於攝像手段6的正下方時,可以藉由攝像手段6及控制手段9執行檢測半導體晶圓10之用來雷射加工的加工區域的校準(alignment)作業。亦即,攝像手段6及控制手段9會完成在半導體晶圓10之第1方向上形成的分割預定線101是否定位為平行於X軸方向的校準。又,對於在半導體晶圓10上所形成之直交於第1方向的方向上之分割預定線101,也是同樣完成校準。此時,雖然半導體晶圓10之形成有分割預定線101的表面10a是位於下側,但是因為攝像手段6是如上述具備由紅外線照明手段與可捕捉紅外線之光學系統以及將對應於紅外線之電信號輸出的攝像元件(紅外線CCD)等所構成之攝像手段,所以可由背面10b穿透而拍攝分割預定線101。 When the work chuck 36 is positioned directly below the image pickup means 6, an alignment operation for detecting the processing area of the semiconductor wafer 10 for laser processing can be performed by the image pickup means 6 and the control means 9. That is, the imaging means 6 and the control means 9 complete the alignment of the planned dividing line 101 formed in the first direction of the semiconductor wafer 10 parallel to the X-axis direction. Further, the alignment is also completed in the same manner as the planned dividing line 101 formed on the semiconductor wafer 10 in the direction orthogonal to the first direction. At this time, although the surface 10a of the semiconductor wafer 10 on which the planned dividing line 101 is formed is located on the lower side, the image capturing means 6 is provided with an optical system capable of capturing infrared rays and an electric light corresponding to infrared rays as described above. Since the image pickup device (infrared CCD) of the signal output constitutes an imaging means, the division candidate line 101 can be imaged by the back surface 10b.
如上述進行校準時,工作夾台36上之半導體晶圓10成為定位在圖9(a)所示之座標位置的狀態。再者,圖9(b)顯示了將工作夾台36亦即分割預定線由圖9(a)所示之狀態旋轉90度後的狀態。 When the calibration is performed as described above, the semiconductor wafer 10 on the work chuck 36 is in a state of being positioned at the coordinate position shown in Fig. 9(a). Further, Fig. 9(b) shows a state in which the work chuck 36, that is, the divided line is rotated by 90 degrees from the state shown in Fig. 9(a).
又,形成於定位在圖9(a)及圖9(b)所示之座標位置之狀態下的半導體晶圓10的各分割預定線101的進給開始位置座標值(A1,A2,A3...An)和進給終止位置座標值(B1,B2,B3...Bn)及進給開始位置座標值(C1,C2,C3...Cn)和 進給終止位置座標值(D1,D2,D3...Dn)是其設計值的數據儲存於控制手段9之隨機存取記憶體(RAM)93的第2記憶區域93b中。 Further, the feed start position coordinate values (A1, A2, A3.) of the respective planned dividing lines 101 of the semiconductor wafer 10 which are formed in the state of being positioned at the coordinate positions shown in Figs. 9(a) and 9(b). ..An) and the feed end position coordinate values (B1, B2, B3...Bn) and the feed start position coordinate values (C1, C2, C3...Cn) and The feed end position coordinate values (D1, D2, D3, ... Dn) are data of design values stored in the second memory area 93b of the random access memory (RAM) 93 of the control means 9.
若是如上述地檢測出形成在保持於工作夾台36上之半導體晶圓10的分割預定線101,並進行檢測位置之校準後,則移動工作夾台36並將圖9(a)中最上方之分割預定線101定位於高度位置檢測裝置7之色差透鏡75的正下方。而且,進而如圖11所示般,將半導體晶圓10之分割預定線101的一端(圖11中為左端)之進給開始位置座標值(A1)(參照圖9(a))定位於色差透鏡75的正下方。接著,使高度位置檢測裝置7作動,並且使工作夾台36朝圖11中箭頭X1所示之方向以預定的進給速度(例如,200mm/秒)移動,並根據X軸方向位置檢測手段374所產生的檢測信號移動到進給終止位置座標值(B1)(高度位置檢測步驟)。此結果,可以如上述地檢測出半導體晶圓10之圖9(a)中相對於最上位的分割預定線101的高度位置、亦即相對於波長為600nm時所設定之高度位置(0)(基準位置)的偏差。而且,控制手段9會根據對於波長為600nm時所設定之高度位置(0)(基準位置)的偏差,如圖10所示地求出對半導體晶圓10之XY座標上之基準位置的偏差,並將對此XY座標上之基準位置的偏差儲存於上述隨機存取記憶體(RAM)103的第3記憶區域93c中。如此,沿著形成於半導體晶圓10之所有的分割預定線101實施高度位置檢測步驟,並將對各分割預定線101的XY座標上之基準位置的偏差儲存於上述隨機存取記憶體(RAM)103的第3記 憶區域103c中。如以上所述,高度位置檢測裝置7是求出透過色差透鏡75而垂直地照射於保持於工作夾台36上之被加工物W的上面的光之回授光中光強度最高的波長,藉此檢測出被加工物W的高度位置,因此可以解決光照射在偏離分割預定線101的位置而檢測出偏離分割預定線101的位置之高度的問題。 If the planned dividing line 101 formed on the semiconductor wafer 10 held on the working chuck 36 is detected as described above and the alignment of the detected position is performed, the working chuck 36 is moved and the top of FIG. 9(a) is moved. The division planned line 101 is positioned directly below the color difference lens 75 of the height position detecting device 7. Further, as shown in FIG. 11, the feed start position coordinate value (A1) (refer to FIG. 9(a)) of one end (the left end in FIG. 11) of the planned dividing line 101 of the semiconductor wafer 10 is positioned at the color difference. Directly below the lens 75. Next, the height position detecting device 7 is actuated, and the work chuck 36 is moved at a predetermined feed speed (for example, 200 mm/sec) in the direction indicated by an arrow X1 in Fig. 11, and the position detecting means 374 is based on the X-axis direction. The generated detection signal is moved to the feed end position coordinate value (B1) (height position detecting step). As a result, the height position of the semiconductor wafer 10 in FIG. 9(a) with respect to the uppermost dividing line 101, that is, the height position (0) set with respect to the wavelength of 600 nm can be detected as described above ( Deviation of the reference position). Further, the control means 9 obtains a deviation from the reference position on the XY coordinates of the semiconductor wafer 10 as shown in FIG. 10 based on the deviation of the height position (0) (reference position) set at the wavelength of 600 nm. The deviation of the reference position on the XY coordinate is stored in the third memory area 93c of the random access memory (RAM) 103. In this manner, the height position detecting step is performed along all the planned dividing lines 101 formed on the semiconductor wafer 10, and the deviation of the reference position on the XY coordinates of each divided line 101 is stored in the random access memory (RAM). The third record of 103 Recall in area 103c. As described above, the height position detecting device 7 is a wavelength at which the light intensity of the light that is transmitted perpendicularly to the upper surface of the workpiece W held by the working chuck 36 by the chromatic aberration lens 75 is the highest. Since the height position of the workpiece W is detected, it is possible to solve the problem that the light is irradiated at a position deviated from the division planned line 101 and the height of the position deviated from the division planned line 101 is detected.
若是如以上沿著形成於半導體晶圓10之所有的分割預定線101實施了高度位置檢測步驟後,則實施在半導體晶圓10的內部沿著分割預定線101形成改質層的雷射加工。 If the height position detecting step is performed along all of the planned dividing lines 101 formed on the semiconductor wafer 10 as described above, laser processing for forming a modified layer along the dividing line 101 in the inside of the semiconductor wafer 10 is performed.
要實施雷射加工,首先要移動工作夾台36並將圖9(a)中最上方之分割預定線101定位於雷射光線照射手段52之聚光器522的正下方。然後,再如圖12(a)所示,將分割預定線101的一端(圖12(a)中為左端)之進給開始位置座標值(A1)(參照圖9(a))定位於聚光器522的正下方。控制手段9使Z軸移動手段53作動,並將聚光器522所照射之脈衝雷射光線的聚光點P從半導體晶圓10的背面10b(上面)對位於預定的深度位置。其次,控制手段9使雷射光線照射手段52作動,且從聚光器522照射脈衝雷射光線,並且使工作夾台36朝箭頭X1所示方向以預定的加工進給速度移動(雷射加工步驟)。接著,如圖12(b)所示,聚光器522的照射位置到達分割預定線101的另一端(圖12(b)中為右端)後,停止脈衝雷射光線的照射,並且停止工作夾台36的移動。該雷射加工步驟中,控制手段9會根據相對於與儲存於隨機存取記憶體 (RAM)103的第3記憶區域103c中之分割預定線101的XY座標對應之基準位置的偏差,來控制Z軸移動手段53的脈衝馬達532,並且如圖12(b)所示,使聚光器522對應半導體晶圓10之分割預定線101上之高度位置而在上下方向上移動。此結果是在半導體晶圓10的內部,如圖12(b)所示,從背面10b(上面)在預定的深度位置上與背面10b(上面)平行地形成改質層110。 To perform the laser processing, the working chuck 36 is first moved and the uppermost dividing line 101 in Fig. 9(a) is positioned directly below the concentrator 522 of the laser beam irradiation means 52. Then, as shown in FIG. 12(a), the feed start position coordinate value (A1) (refer to FIG. 9(a)) of one end (the left end in FIG. 12(a)) of the division planned line 101 is positioned at the poly. Directly below the light 522. The control means 9 activates the Z-axis moving means 53 and positions the condensed spot P of the pulsed laser beam irradiated by the concentrator 522 from the back surface 10b (upper surface) of the semiconductor wafer 10 at a predetermined depth position. Next, the control means 9 activates the laser beam irradiation means 52, and irradiates the pulsed laser beam from the concentrator 522, and moves the work chuck 36 at a predetermined machining feed speed in the direction indicated by the arrow X1 (laser processing) step). Next, as shown in FIG. 12(b), after the irradiation position of the concentrator 522 reaches the other end of the division planned line 101 (the right end in FIG. 12(b)), the irradiation of the pulsed laser light is stopped, and the operation clamp is stopped. The movement of the table 36. In the laser processing step, the control means 9 is based on the relative storage and storage in the random access memory. The deviation of the reference position corresponding to the XY coordinates of the division planned line 101 in the third memory area 103c of the (RAM) 103 controls the pulse motor 532 of the Z-axis moving means 53, and as shown in FIG. 12(b), The optical device 522 moves in the up and down direction in accordance with the height position on the planned dividing line 101 of the semiconductor wafer 10. As a result, inside the semiconductor wafer 10, as shown in FIG. 12(b), the reforming layer 110 is formed in parallel with the back surface 10b (upper surface) from the back surface 10b (upper surface) at a predetermined depth position.
再者,可將上述雷射加工步驟的加工條件設定如下。 Furthermore, the processing conditions of the above laser processing steps can be set as follows.
雷射:YVO4脈衝雷射 Laser: YVO4 pulsed laser
波長:1040nm Wavelength: 1040nm
重複頻率:200kHz Repeat frequency: 200kHz
平均輸出:1W Average output: 1W
聚光點直徑:φ 1μm Converging point diameter: φ 1μm
加工進給速度:300mm/秒 Processing feed rate: 300mm / sec
如以上,若是沿著在半導體晶圓10的第1方向上延伸之所有分割預定線101執行上述雷射加工步驟後,則使工作夾台36旋轉90度,並沿著在對上述第1方向直交之方向上延伸的各分割預定線101執行上述雷射加工步驟。如此,若是沿著形成於半導體晶圓10上之所有分割預定線101執行上述雷射加工步驟後,則保持有半導體晶圓10的工作夾台36回到最初吸引保持半導體晶圓10的位置,並在此處解除對半導體晶圓10的吸引保持。然後,半導體晶圓10被未圖示之搬運手段搬運至分割步驟。 As described above, if the laser processing step is performed along all the planned dividing lines 101 extending in the first direction of the semiconductor wafer 10, the working chuck 36 is rotated by 90 degrees and along the first direction. Each of the division planned lines 101 extending in the direction of the orthogonal direction performs the above-described laser processing step. In this manner, after the laser processing step is performed along all the planned dividing lines 101 formed on the semiconductor wafer 10, the working chuck 36 holding the semiconductor wafer 10 returns to the position where the semiconductor wafer 10 is initially attracted and held. Here, the suction and holding of the semiconductor wafer 10 is released. Then, the semiconductor wafer 10 is transported to a dividing step by a transport means (not shown).
以上,雖然例示了將本發明之保持於工作夾台之被加工物的高度位置檢測裝置適用於雷射加工機的例子,但本發明可適用於將保持於工作夾台上之被加工物進行加工之種種加工機。 As described above, although the height position detecting device for the workpiece held by the work chuck of the present invention is applied to the laser processing machine, the present invention is applicable to the workpiece to be held on the work chuck. Processing all kinds of processing machines.
36‧‧‧工作夾台 36‧‧‧Working table
70‧‧‧高度位置檢測手段 70‧‧‧ Height position detection means
71‧‧‧光源 71‧‧‧Light source
72‧‧‧第1單模光纖 72‧‧‧1st single mode fiber
73‧‧‧光纖耦合器 73‧‧‧Fiber coupler
74‧‧‧法比-培羅特可調式濾波器 74‧‧‧Fabe-Perot Adjustable Filter
75‧‧‧色差透鏡 75‧‧‧chromatic aberration lens
76‧‧‧交流電源施加手段 76‧‧‧AC power supply means
77‧‧‧第2單模光纖 77‧‧‧2nd single mode fiber
78‧‧‧放大器 78‧‧‧Amplifier
79‧‧‧光接收元件 79‧‧‧Light receiving components
W‧‧‧被加工物 W‧‧‧Processed objects
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