JP2011122894A - Apparatus for measuring workpiece held at chuck table and laser beam machine - Google Patents

Apparatus for measuring workpiece held at chuck table and laser beam machine Download PDF

Info

Publication number
JP2011122894A
JP2011122894A JP2009279824A JP2009279824A JP2011122894A JP 2011122894 A JP2011122894 A JP 2011122894A JP 2009279824 A JP2009279824 A JP 2009279824A JP 2009279824 A JP2009279824 A JP 2009279824A JP 2011122894 A JP2011122894 A JP 2011122894A
Authority
JP
Japan
Prior art keywords
light
path
chuck
laser
reflected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009279824A
Other languages
Japanese (ja)
Inventor
Yudai Hata
Keiji Nomaru
Daiki Sawabe
大樹 沢辺
雄大 畑
圭司 能丸
Original Assignee
Disco Abrasive Syst Ltd
株式会社ディスコ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Abrasive Syst Ltd, 株式会社ディスコ filed Critical Disco Abrasive Syst Ltd
Priority to JP2009279824A priority Critical patent/JP2011122894A/en
Publication of JP2011122894A publication Critical patent/JP2011122894A/en
Pending legal-status Critical Current

Links

Images

Abstract

A measuring device capable of accurately measuring the upper surface position of a workpiece held on a chuck table and a laser processing machine equipped with the measuring device are provided.
A collimation lens 63 converts light from a light source 61 into parallel light by a first light branching means 62 that guides light reflected from the light source 61 to a first path and guides reflected light that travels back through the first path to a second path. Second light branching means 64 that divides the formed light into a third path and a fourth path, and light guided to the third path and held in the third path is held by the chuck table 36. The objective lens 65 that leads to the workpiece W, the condenser lens 66, the reflection mirror 67 that reflects the parallel light guided to the fourth path and reverses the reflected light to the fourth path, and the second path A diffraction grating 69 that diffracts the reflected light guided to the light source, and an image sensor 71 that detects light intensity in a predetermined wavelength region of the reflected light diffracted by the diffraction grating 69.
[Selection] Figure 2

Description

  The present invention relates to a measuring apparatus and a laser processing machine for measuring the height of a workpiece such as a semiconductor wafer held on a chuck table mounted on a processing machine such as a laser processing machine.

  In the semiconductor device manufacturing process, a plurality of regions are partitioned by dividing lines called streets arranged in a lattice pattern on the surface of a substantially wafer-shaped semiconductor wafer, and devices such as ICs, LSIs, etc. are partitioned in the partitioned regions. Form. Then, the semiconductor wafer is cut along the streets to divide the region in which the device is formed to manufacture individual semiconductor devices.

  As a method of dividing along the street of the above-described semiconductor wafer or the like, there is a laser processing method in which a pulse laser beam having transparency to the wafer is used, and the pulse laser beam is irradiated with a focusing point inside the region to be divided. Has been tried. The dividing method using this laser processing method is to irradiate a pulse laser beam having a wavelength of 1064 nm, for example, having a light converging point from one surface side of the wafer and having the light converging point inside, so that a street is formed inside the wafer. The deteriorated layer is continuously formed along the surface, and the workpiece is divided by applying an external force along the street whose strength is reduced by the formation of the deteriorated layer. (For example, refer to Patent Document 1.) When the altered layer is formed inside along the street formed on the workpiece as described above, a laser beam condensing point is formed at a predetermined depth position from the upper surface of the workpiece. It is important to position.

  Further, as a method of dividing a plate-like workpiece such as a semiconductor wafer, a laser machining groove is formed by irradiating a pulse laser beam along a street formed on the workpiece, and along the laser machining groove. A method of cleaving with a mechanical braking device has been proposed. (For example, refer to Patent Document 2.) Even when the laser processing groove is formed along the street formed on the workpiece, the laser beam condensing point is positioned at a predetermined height position of the workpiece. is important.

  However, plate-like workpieces such as semiconductor wafers have undulations, and their thickness varies, making it difficult to perform uniform laser processing. That is, when forming an altered layer along the street inside the wafer, if the wafer thickness varies, the altered layer is uniformly formed at a predetermined depth position due to the refractive index when irradiating a laser beam. I can't. Further, even when the laser processing groove is formed along the street formed on the wafer, if the thickness varies, the laser processing groove having a uniform depth cannot be formed.

  In order to solve the above-mentioned problem, a measuring apparatus capable of reliably measuring the upper surface height of a workpiece such as a semiconductor wafer held on a chuck table is disclosed in Patent Document 3 below. The measuring device disclosed in Patent Document 3 below uses the fact that white light that has passed through a chromatic aberration lens has a focal length that differs depending on the wavelength, and determines the focal length by specifying the wavelength by the reflected light. The height position of the workpiece held on the table can be accurately measured.

Japanese Patent No. 3408805 JP-A-10-305420 JP 2008-170366 A

  Thus, when white light is condensed by the chromatic aberration lens, a condensing point corresponding to each wavelength is positioned on the optical axis, but as the wavelength becomes longer, it is positioned on the inner side (optical axis side) of the condensing lens. In particular, since the NA value becomes small, there is a problem that the focal point is blurred and the accurate surface height position cannot be detected.

  The present invention has been made in view of the above facts, and a main technical problem thereof is a measuring apparatus and a measuring apparatus capable of accurately measuring the height of a workpiece such as a semiconductor wafer held on a chuck table. It is to provide a laser processing machine equipped with.

In order to solve the main technical problem, according to the present invention, in the workpiece measuring device held on the chuck table for detecting the position of the workpiece held on the chuck table equipped in the processing machine,
A light emitting source that emits light having a predetermined wavelength region;
First light branching means for guiding light from the light emitting source to the first path and for guiding reflected light that travels backward through the first path to the second path;
A collimation lens that forms light guided to the first path into parallel light;
Second light branching means for dividing light formed into parallel light by the collimation lens into a third path and a fourth path;
An objective lens that is disposed in the third path and guides the light guided to the third path to a workpiece held by the chuck table;
Parallel light disposed between the second light branching means and the objective lens is guided to the third path, and a focusing point is positioned on the objective lens so that light from the objective lens is reflected. A condenser lens that generates pseudo-parallel light;
A reflecting mirror that is disposed in the fourth path and reflects parallel light guided to the fourth path and reverses the reflected light to the fourth path;
Reflected by the reflecting mirror, the fourth path, the second light branching unit, the collimation lens, and the first path are reversed to be guided from the first light branching unit to the second path. The reflected light is reflected by the workpiece held on the chuck table, and the first lens and the condenser lens, the second light branching unit, the collimation lens, and the first path are reversed. A diffraction grating that diffracts the interference with the reflected light guided to the second path from the optical branching means;
An image sensor for detecting light intensity in a predetermined wavelength range of reflected light diffracted by the diffraction grating;
A spectral interference waveform is obtained based on a detection signal from the image sensor, a waveform analysis is performed based on the spectral interference waveform and a theoretical waveform function, and an optical path length to the reflection mirror in the fourth path is calculated. An optical path length difference from the optical path length to the workpiece held on the chuck table in the third path is obtained, and the workpiece held on the chuck table from the surface of the chuck table based on the optical path length difference Control means for obtaining a distance to the upper surface of
An apparatus for measuring a workpiece held on a chuck table is provided.

  The waveform analysis performed by the control means obtains the optical path length difference having a high correlation coefficient between the spectral interference waveform and the theoretical waveform function.

Further, according to the present invention, a chuck table having a holding surface for holding a workpiece, a laser beam irradiation means for irradiating a workpiece held on the chuck table with a laser beam, and a workpiece held on the chuck table. In a laser processing machine comprising a measuring device for detecting the position of a workpiece,
The measuring device includes a light emitting source that emits light having a predetermined wavelength region;
First light branching means for guiding light from the light emitting source to the first path and for guiding reflected light that travels backward through the first path to the second path;
A collimation lens that forms light guided to the first path into parallel light;
Second light branching means for dividing light formed into parallel light by the collimation lens into a third path and a fourth path;
An objective lens that is disposed in the third path and guides the light guided to the third path to a workpiece held by the chuck table;
Parallel light disposed between the second light branching means and the objective lens is guided to the third path, and a focusing point is positioned on the objective lens so that light from the objective lens is reflected. A condenser lens that generates pseudo-parallel light;
A reflecting mirror that is disposed in the fourth path and reflects parallel light guided to the fourth path and reverses the reflected light to the fourth path;
Reflected by the reflecting mirror, the fourth path, the second light branching unit, the collimation lens, and the first path are reversed to be guided from the first light branching unit to the second path. The reflected light is reflected by the workpiece held on the chuck table, and the first lens and the condenser lens, the second light branching unit, the collimation lens, and the first path are reversed. A diffraction grating that diffracts the interference with the reflected light guided to the second path from the optical branching means;
An image sensor for detecting light intensity in a predetermined wavelength range of reflected light diffracted by the diffraction grating;
A spectral interference waveform is obtained based on a detection signal from the image sensor, a waveform analysis is performed based on the spectral interference waveform and a theoretical waveform function, and an optical path length to the reflection mirror in the fourth path is calculated. An optical path length difference from the optical path length to the workpiece held on the chuck table in the third path is obtained, and the workpiece held on the chuck table from the surface of the chuck table based on the optical path length difference And a control means for obtaining a distance to the upper surface of
The laser beam irradiating unit includes a laser beam oscillating unit that oscillates a laser beam, and a dichroic that is disposed between the condenser lens and the objective lens and changes the direction of the laser beam oscillated from the laser beam oscillating unit toward the objective lens. A mirror,
A laser beam machine characterized by the above is provided.

The workpiece measuring apparatus held on the chuck table according to the present invention is configured as described above, obtains a spectral interference waveform based on a detection signal from an image sensor, and based on the spectral interference waveform and a theoretical waveform function. Waveform analysis is performed to obtain an optical path length difference between an optical path length as a reference to the reflecting mirror in the fourth path and an optical path length to the workpiece held on the chuck table in the third path, and the optical path Since the distance from the surface of the chuck table to the upper surface of the workpiece held on the chuck table is obtained based on the length difference, the upper surface position of the workpiece held on the chuck table can be accurately measured.
Further, since the laser processing machine according to the present invention is equipped with the above-described measuring device, it is possible to accurately perform laser processing at a predetermined position based on the upper surface position of the workpiece held on the chuck table.

The perspective view of the laser processing machine comprised according to this invention. FIG. 2 is a block configuration diagram of a position measurement device and laser beam irradiation means constituting a position measurement / laser irradiation unit equipped in the laser processing machine shown in FIG. Explanatory drawing which shows the spectral interference waveform calculated | required by the control means which comprises the position measuring device shown in FIG. Explanatory drawing which shows the optical path length difference to the surface of the workpiece calculated | required by the control means which comprises the position measuring apparatus shown in FIG. Explanatory drawing of the optical path length difference which shows the optical path length difference to the surface of the workpiece calculated | required by the control means which comprises the position measuring apparatus shown in FIG. 2, the optical path length to the surface of a workpiece, and the thickness of a workpiece . FIG. 2 is a perspective view of a semiconductor wafer as a workpiece to be processed by the laser processing machine shown in FIG. FIG. 7 is an explanatory diagram showing a relationship with a coordinate position in a state where the semiconductor wafer shown in FIG. 6 is held at a predetermined position of the chuck table of the laser beam machine shown in FIG. 1. Explanatory drawing of the height position detection process implemented by the measuring device of the workpiece hold | maintained at the chuck table with which the laser beam machine shown in FIG. 1 was equipped. FIG. 8 is an explanatory view of a processing step for forming a deteriorated layer on the semiconductor wafer shown in FIG. 7 by the laser processing machine shown in FIG. 1.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Preferred embodiments of a workpiece measuring apparatus and a laser beam machine held on a chuck table configured according to the invention will be described in detail below with reference to the accompanying drawings.

  FIG. 1 is a perspective view of a laser beam machine equipped with a measuring device for measuring the position of a workpiece held on a chuck table configured according to the present invention. A laser beam machine 1 shown in FIG. 1 includes a stationary base 2 and a chuck table mechanism that is disposed on the stationary base 2 so as to be movable in a machining feed direction (X-axis direction) indicated by an arrow X and holds a workpiece. 3, a laser beam irradiation unit support mechanism 4 disposed on the stationary base 2 so as to be movable in an indexing feed direction (Y axis direction) indicated by an arrow Y orthogonal to the X axis direction, and the laser beam irradiation unit support mechanism 4 And a position measurement / laser irradiation unit 5 disposed so as to be movable in a condensing point position adjustment direction (Z-axis direction) indicated by an arrow Z.

  The chuck table mechanism 3 includes a pair of guide rails 31 and 31 disposed in parallel along the X-axis direction on the stationary base 2, and is arranged on the guide rails 31 and 31 so as to be movable in the X-axis direction. A first sliding block 32 provided, a second sliding block 33 movably disposed on the first sliding block 32 in the Y-axis direction, and a cylindrical member on the second sliding block 33 And a chuck table 36 as a workpiece holding means. The chuck table 36 includes a suction chuck 361 formed of a porous material, and holds, for example, a circular semiconductor wafer as a workpiece on a holding surface which is the upper surface of the suction chuck 361 by suction means (not shown). It is supposed to be. The chuck table 36 configured as described above is rotated by a pulse motor (not shown) disposed in the cylindrical member 34. The chuck table 36 is provided with a clamp 362 for fixing an annular frame that supports a workpiece such as a semiconductor wafer via a protective tape.

  The first sliding block 32 has a pair of guided grooves 321 and 321 fitted to the pair of guide rails 31 and 31 on the lower surface thereof, and is parallel to the upper surface along the X-axis direction. A pair of formed guide rails 322 and 322 are provided. The first sliding block 32 configured in this manner moves in the X-axis direction along the pair of guide rails 31, 31 when the guided grooves 321, 321 are fitted into the pair of guide rails 31, 31. Configured to be possible. The chuck table mechanism 3 in the illustrated embodiment includes a processing feed means 37 for moving the first slide block 32 along the pair of guide rails 31, 31 in the X-axis direction. The processing feed means 37 includes a male screw rod 371 disposed in parallel between the pair of guide rails 31 and 31, and a drive source such as a pulse motor 372 for rotationally driving the male screw rod 371. One end of the male screw rod 371 is rotatably supported by a bearing block 373 fixed to the stationary base 2, and the other end is connected to the output shaft of the pulse motor 372 by transmission. The male screw rod 371 is screwed into a penetrating female screw hole formed in a female screw block (not shown) provided on the lower surface of the central portion of the first sliding block 32. Therefore, the first sliding block 32 is moved along the guide rails 31 and 31 in the X-axis direction by driving the male screw rod 371 forward and backward by the pulse motor 372.

  The laser beam machine 1 in the illustrated embodiment includes a machining feed amount detection means 374 for detecting the machining feed amount of the chuck table 36. The processing feed amount detection means 374 includes a linear scale 374a disposed along the guide rail 31, and a read head disposed along the linear scale 374a along with the first sliding block 32 disposed along the first sliding block 32. 374b. In the illustrated embodiment, the reading head 374b of the feed amount detecting means 374 sends a pulse signal of one pulse every 1 μm to the control means described later. Then, the control means to be described later detects the machining feed amount of the chuck table 36 by counting the input pulse signals. When the pulse motor 372 is used as the drive source of the machining feed means 37, the machining feed amount of the chuck table 36 is counted by counting the drive pulses of the control means to be described later that outputs a drive signal to the pulse motor 372. Can also be detected. When a servo motor is used as a drive source for the machining feed means 37, a pulse signal output from a rotary encoder that detects the rotation speed of the servo motor is sent to a control means described later, and the pulse signal input by the control means. By counting, the machining feed amount of the chuck table 36 can also be detected.

  The second sliding block 33 is provided with a pair of guided grooves 331 and 331 which are fitted to a pair of guide rails 322 and 322 provided on the upper surface of the first sliding block 32 on the lower surface thereof. By fitting the guided grooves 331 and 331 to the pair of guide rails 322 and 322, the guided grooves 331 and 331 are configured to be movable in the Y-axis direction. The chuck table mechanism 3 in the illustrated embodiment has a first index for moving the second slide block 33 along the pair of guide rails 322 and 322 provided in the first slide block 32 in the Y-axis direction. A feeding means 38 is provided. The first index feed means 38 includes a male screw rod 381 disposed in parallel between the pair of guide rails 322 and 322, and a drive source such as a pulse motor 382 for rotationally driving the male screw rod 381. It is out. One end of the male screw rod 381 is rotatably supported by a bearing block 383 fixed to the upper surface of the first sliding block 32, and the other end is connected to the output shaft of the pulse motor 382. The male screw rod 381 is screwed into a penetrating female screw hole formed in a female screw block (not shown) provided on the lower surface of the central portion of the second sliding block 33. Therefore, by driving the male screw rod 381 forward and backward by the pulse motor 382, the second slide block 33 is moved along the guide rails 322 and 322 in the Y-axis direction.

  The laser beam machine 1 in the illustrated embodiment includes index feed amount detection means 384 for detecting the index machining feed amount of the second sliding block 33. The index feed amount detecting means 384 includes a linear scale 384a disposed along the guide rail 322 and a read head disposed along the linear scale 384a along with the second sliding block 33 disposed along the second sliding block 33. 384b. In the illustrated embodiment, the reading head 384b of the feed amount detection means 384 sends a pulse signal of one pulse every 1 μm to the control means described later. Then, the control means described later detects the index feed amount of the chuck table 36 by counting the input pulse signals. When the pulse motor 382 is used as the drive source of the first indexing and feeding means 38, the drive table of the chuck table 36 is counted by counting the drive pulses of the control means to be described later that outputs a drive signal to the pulse motor 382. The index feed amount can also be detected. When a servo motor is used as a drive source for the machining feed means 37, a pulse signal output from a rotary encoder that detects the rotation speed of the servo motor is sent to a control means described later, and the pulse signal input by the control means. It is possible to detect the index feed amount of the chuck table 36 by counting.

  The laser beam irradiation unit support mechanism 4 includes a pair of guide rails 41 and 41 disposed in parallel along the Y-axis direction on the stationary base 2 and a direction indicated by an arrow Y on the guide rails 41 and 41. A movable support base 42 is provided so as to be movable. The movable support base 42 includes a movement support portion 421 that is movably disposed on the guide rails 41, 41, and a mounting portion 422 that is attached to the movement support portion 421. The mounting portion 422 is provided with a pair of guide rails 423 and 423 extending in the Z-axis direction on one side surface in parallel. The laser beam irradiation unit support mechanism 4 in the illustrated embodiment includes a second index feed means 43 for moving the movable support base 42 along the pair of guide rails 41 and 41 in the Y-axis direction. The second index feed means 43 includes a male screw rod 431 disposed in parallel between the pair of guide rails 41, 41, and a drive source such as a pulse motor 432 for rotationally driving the male screw rod 431. It is out. One end of the male screw rod 431 is rotatably supported by a bearing block (not shown) fixed to the stationary base 2, and the other end is connected to the output shaft of the pulse motor 432. The male screw rod 431 is screwed into a female screw hole formed in a female screw block (not shown) provided on the lower surface of the central portion of the moving support portion 421 constituting the movable support base 42. For this reason, when the male screw rod 431 is driven to rotate forward and reversely by the pulse motor 432, the movable support base 42 is moved along the guide rails 41, 41 in the Y-axis direction.

  The position measurement and laser irradiation unit 5 in the illustrated embodiment includes a unit holder 51 and a cylindrical unit housing 52 attached to the unit holder 51, and the unit holder 51 is connected to the movable support base 42. The mounting portion 422 is movably disposed along a pair of guide rails 423 and 423. A unit housing 52 attached to the unit holder 51 irradiates a laser beam to the workpiece held by the chuck table 36 and a position measuring device for detecting the height position of the workpiece held by the chuck table 36. Laser beam irradiation means is provided. The position measuring device and the laser beam irradiation means will be described with reference to FIG.

  The position measuring device 6 in the illustrated embodiment emits light having a predetermined wavelength region, guides the light from the light source 61 to the first path 6a, and reverses the first path 6a. The first light splitting means 62 that guides the reflected light to the second path 6b, the collimation lens 63 that forms the light guided to the first path 6a into parallel light, and the collimation lens 63 form the parallel light. And a second light branching means 64 for dividing the light into a third path 6c and a fourth path 6d.

  As the light emitting source 61, for example, an LED, an SLD, an LD, a halogen power source, an ASE power source, or a supercontinuum power source that emits light having a wavelength of 820 to 870 nm can be used. As the first optical branching unit 62, a polarization maintaining fiber coupler, a polarization maintaining fiber circulator, a single mode fiber coupler, a single mode fiber coupler circulator, or the like can be used. In the illustrated embodiment, the second optical branching unit 64 is constituted by a beam splitter 641 and a direction conversion mirror 642. The path from the light emitting source 61 to the first light branching means 62 and the first path 6a are constituted by optical fibers.

  The third path 6c includes an objective lens 65 that guides the light guided to the third path 6c to the workpiece W held on the chuck table 36, the objective lens 65, and the second light branching unit. A condensing lens 66 is disposed between the two. This condensing lens 66 condenses the parallel light guided from the second light branching means 64 to the third path 6c, positions the condensing point in the objective lens 65, and quasi-parallels the light from the objective lens 65. Generate into light. As described above, the condenser lens 66 is disposed between the objective lens 65 and the second light branching means 64 to generate the light from the objective lens 65 as quasi-parallel light, which is held on the chuck table 36. When reflected light reflected by the workpiece W travels backward through the objective lens 65, the condenser lens 66, the second light branching means 64, and the collimation lens 63, the light is converged on the optical fiber constituting the first path 6a. Can do. The objective lens 65 is mounted on a lens case 651. The lens case 651 is moved in the vertical direction in FIG. 2, that is, on the chuck table 36 by a first condensing point position adjusting means 650 comprising a voice coil motor, a linear motor or the like. It can be moved in the condensing point position adjustment direction (Z-axis direction) perpendicular to the holding surface. The first condensing point position adjusting unit 67 is controlled by a control unit described later.

  The fourth path 6d is provided with a reflection mirror 67 that reflects the parallel light guided to the fourth path 6d and reverses the reflected light to the fourth path 6d. The reflecting mirror 67 is attached to the lens case 650 of the objective lens 65 in the illustrated embodiment.

  In the second path 6b, a collimation lens 68, a diffraction grating 69, a condenser lens 70, and a line image sensor 71 are disposed. The collimation lens 68 is reflected by the reflecting mirror 67 and travels backward from the first light branching means 62 to the second path 6d, the second light branching means 64, the collimation lens 63, and the first path 6a. The reflected light guided to 6b and reflected by the workpiece W held on the chuck table 36 are reflected through the objective lens 65, the condenser lens 66, the second light branching means 64, the collimation lens 63, and the first path 6a. Reversely, the reflected light guided from the first light branching means 62 to the second path 6b is formed into parallel light. The diffraction grating 69 diffracts the interference of the both reflected lights formed in the parallel light by the collimation lens 68 and sends a diffraction signal corresponding to each wavelength to the line image sensor 71 via the condenser lens 70. The line image sensor 71 detects the light intensity at each wavelength of the reflected light diffracted by the diffraction grating 69 and sends a detection signal to the control means 80.

  The control means 80 obtains a spectral interference waveform from the detection signal from the image sensor 71, executes waveform analysis based on the spectral interference waveform and a theoretical waveform function, and is held by the chuck table 36 in the third path 6c. An optical path length difference between the optical path length to the workpiece W and the optical path length to the reflecting mirror 67 in the fourth path 6d is obtained, and the workpiece held on the chuck table 36 from the surface of the chuck table 36 based on the optical path length difference. The distance to the upper surface of the workpiece W is obtained. That is, the control unit 80 obtains a spectral interference waveform as shown in FIG. 3 based on the detection signal from the image sensor 71. In FIG. 3, the horizontal axis indicates the wavelength of the reflected light, and the vertical axis indicates the light intensity.

Hereinafter, an example of waveform analysis performed by the control unit 80 based on the spectral interference waveform and a theoretical waveform function will be described.
The optical path length from the beam splitter 641 of the second optical branching means 64 in the third path 6c to the surface of the chuck table 35 is (L1), and the beam of the second optical branching means 64 in the fourth path 6d. The optical path length from the splitter 641 to the reflection mirror 67 is (L2), and the difference between the optical path length (L2) and the optical path length (L1) is the optical path length difference (d = L2-L1). In the illustrated embodiment, the optical path length difference (d = L2−L1) is set to 500 μm, for example.

  Next, the control means 80 performs waveform analysis based on the spectral interference waveform and the theoretical waveform function. This waveform analysis can be executed based on, for example, Fourier transformation theory or wavelet transformation theory. In the embodiment described below, examples using the Fourier transformation formulas shown in the following formulas 1, 2, and 3 are used. explain.

In the above equation, λ is a wavelength, d is the optical path length difference (L2−L1), and W (λi) is a window function.
The above Equation 1 shows that the wave period is closest (highly correlated) in comparison between the theoretical waveform of cos and the spectral interference waveform (I (λ n )), that is, the spectral interference waveform and the theoretical waveform function. An optical path length difference (d) having a high correlation coefficient is obtained. Further, the above formula 2 is obtained by comparing the theoretical waveform of sin and the spectral interference waveform (I (λ n )) with the closest wave period (high correlation)), that is, the spectral interference waveform and the theoretical waveform. An optical path length difference (d) having a high correlation coefficient with the function is obtained. Then, the above Equation 3 obtains the average value of the result of Equation 1 and the result of Equation 2.

  The control means 80 obtains the optical path length difference (d) having a high signal intensity as shown in FIG. 4 by executing the calculation based on the above-described Equations 1, 2, and 3. In FIG. 4, the horizontal axis indicates the optical path length difference (d), and the vertical axis indicates the signal intensity. 4A shows the case where the optical path length difference (d) is 630 μm. In this case, the distance from the surface of the chuck table 36 to the surface (upper surface) of the workpiece W is 130 μm in the illustrated embodiment. . FIG. 4B shows a case where the optical path length difference (d) is 580 μm. In this case, the distance from the surface of the chuck table 36 to the surface (upper surface) of the workpiece W is 80 μm in the illustrated embodiment. . As described above, the distance from the surface of the chuck table 36 to the upper surface of the workpiece W is determined by performing waveform analysis based on the spectral interference waveform and the theoretical waveform function to obtain the optical path length difference (d). Can be sought. The control unit 80 displays the analysis result shown in FIG.

In the above-described embodiment, the case where the workpiece W does not transmit light in the wavelength region as in the case of a silicon wafer has been described. Next, the workpiece W is formed of a material that transmits light, such as sapphire or glass. The case where this is done will be described.
In the case of the workpiece W through which light is transmitted, the light irradiated to the workpiece W is reflected by the reflected light reflected by the surface (upper surface) of the workpiece W and by the rear surface (lower surface) of the workpiece W. Reflected light is generated, and both the reflected light travels backward from the first light branching means 62 through the objective lens 65, the condenser lens 66, the second light branching means 64, the collimation lens 63, and the first path 6a. 2 path 6b. On the other hand, as described above, the reflected light reflected by the reflecting mirror 67 also travels backward from the first light branching means 62 through the fourth path 6d, the second light branching means 64, the collimation lens 62, and the first path 6a. It is guided to the second path 6b. In this way, each reflected light guided to the second path 6 b is formed into parallel light by the collimation lens 68, and the diffracted light diffracted by the diffraction grating 69 further passes through the condenser lens 70 to the line image sensor 71. Led. The line image sensor 71 detects the light intensity at each wavelength of the reflected light diffracted by the diffraction grating 69 and sends a detection signal to the control means 80. When the above-described waveform analysis is executed based on the spectral interference waveform and the theoretical waveform function of the reflected light reflected by the front surface (upper surface) and the back surface (lower surface) of the workpiece W and the reflection mirror 67 in this way, FIG. As shown in FIG. 5, three optical path length differences (d) having high signal intensity are obtained. In FIG. 5, the horizontal axis represents the optical path length difference (d), and the vertical axis represents the signal intensity. In the example shown in FIG. 5, the signal intensity is high at the position where the optical path length difference (d) is 620 μm, the optical path length difference (d) is 500 μm, and the optical path length difference (d) is 120 μm. The signal intensity (A) at the position where the optical path length difference (d) is 620 μm represents the surface (upper surface) of the workpiece W. In this case, the distance from the surface of the chuck table 36 to the surface (upper surface) of the workpiece W is In the illustrated embodiment, it is 120 μm. Further, the signal intensity (B) at the position where the optical path length difference (d) is 500 μm represents the back surface (lower surface) of the workpiece W, and in this case, from the surface of the chuck table 36 to the back surface (lower surface) of the workpiece W. The distance is zero (0) in the illustrated embodiment. On the other hand, the signal intensity (C) at the position where the optical path length difference (d) is 120 μm represents the thickness of the workpiece W, and it is directly required that the thickness of the workpiece W is 120 μm. The control means 80 displays the analysis result shown in FIG.

  Returning to FIG. 2 and continuing the description, the laser beam irradiation means 9 disposed in the unit housing 52 of the position measurement / laser irradiation unit 5 shown in FIG. 1 oscillates from the pulse laser beam oscillation means 91 and the pulse laser beam oscillation means 91. A dichroic mirror 92 for changing the direction of the pulsed laser beam directed toward the objective lens 65 is provided. The pulse laser beam oscillating means 91 includes a pulse laser beam oscillator 911 made of a YAG laser oscillator or a YVO4 laser oscillator and a repetition frequency setting means 912 attached thereto, and oscillates a pulse laser beam having a wavelength of 1064 nm, for example. The dichroic mirror 92 is disposed between the condenser lens 66 and the objective lens 65, and allows the light from the condenser lens 66 to pass through. However, the pulse laser beam oscillated from the pulse laser beam oscillation means 91 is passed to the objective lens 65. Change direction. Accordingly, the pulse laser beam (LB) oscillated from the pulse laser beam oscillating means 91 is changed in direction by 90 degrees by the dichroic mirror 92 and enters the objective lens 65, and is condensed by the objective lens 65 and held on the chuck table 36. The workpiece W is irradiated. Accordingly, the objective lens 65 has a function as a condensing lens constituting the laser beam irradiation means 7.

  Referring back to FIG. 1, the laser processing machine 1 in the illustrated embodiment is configured so that the unit holder 51 is moved along the arrow Z along a pair of guide rails 423 and 423 provided on the mounting portion 422 of the movable support base 42. The second condensing point position adjusting means 53 for moving in the condensing point position adjusting direction (Z-axis direction) shown in FIG. 1, that is, the direction perpendicular to the holding surface of the chuck table 36 is provided. The second condensing point position adjusting means 53 is driven by a male screw rod (not shown) disposed between a pair of guide rails 423 and 423, a pulse motor 532 for rotating the male screw rod, and the like. The position measuring and laser irradiation unit 5 is moved along the guide rails 423 and 423 in the Z-axis direction by driving a male screw rod (not shown) forward and backward by a pulse motor 532. In the illustrated embodiment, the position measurement / laser irradiation unit 5 is moved upward by driving the pulse motor 532 forward, and the position measurement / laser irradiation unit 5 is moved downward by driving the pulse motor 532 in the reverse direction. It is supposed to move.

  An imaging means 95 is disposed at the front end of the unit housing 52 that constitutes the position measurement / laser irradiation unit 5. The imaging unit 95 includes an infrared illumination unit that irradiates a workpiece with infrared rays, an optical system that captures infrared rays emitted by the infrared illumination unit, in addition to a normal imaging device (CCD) that captures visible light. An image pickup device (infrared CCD) that outputs an electrical signal corresponding to the infrared light captured by the optical system is used, and the picked-up image signal is sent to the control means 80 described later.

The laser beam machine 1 in the illustrated embodiment is configured as described above, and the operation thereof will be described below.
FIG. 6 shows a perspective view of a semiconductor wafer 10 as a workpiece to be laser processed. A semiconductor wafer 10 shown in FIG. 6 is made of a silicon wafer, and a plurality of areas are defined by a plurality of streets 101 arranged in a lattice pattern on the surface 10a, and devices such as IC and LSI are defined in the partitioned areas. 102 is formed.

An embodiment of laser processing in which the above-described laser processing machine 1 is used to irradiate a laser beam along the street 101 of the semiconductor wafer 10 to form a deteriorated layer along the street 101 inside the semiconductor wafer 10 will be described. In addition, when the altered layer is formed inside the semiconductor wafer 10, if the thickness of the semiconductor wafer varies, the altered layer can be uniformly formed at a predetermined depth due to the refractive index as described above. Can not. Therefore, before the laser processing, the position of the upper surface of the semiconductor wafer 10 held on the chuck table 36 is measured by the position measuring device 6 described above.
That is, first, the semiconductor wafer 10 is placed on the chuck table 36 of the laser processing machine 1 shown in FIG. 1 with the back surface 10b facing up, and the semiconductor wafer 10 is sucked and held on the chuck table 36. The chuck table 36 that sucks and holds the semiconductor wafer 10 is positioned immediately below the imaging unit 95 by the processing feeding unit 37.

  When the chuck table 36 is positioned immediately below the image pickup means 95, the image pickup means 95 and the control means 8 execute an alignment operation for detecting a processing region to be laser processed on the semiconductor wafer 10. That is, the image pickup means 95 and the control means 8 include a street 101 formed in a predetermined direction of the semiconductor wafer 10 and a position measuring device 6 that constitutes the position measurement / laser irradiation unit 5 of the semiconductor wafer 10 along the street 101. Image processing such as pattern matching for performing alignment with the objective lens 65 is executed, and alignment of detection positions is performed. Similarly, the alignment of the detection position is performed on the street 101 formed in the direction orthogonal to the predetermined direction formed in the semiconductor wafer 10. At this time, the surface 10a on which the street 101 of the semiconductor wafer 10 is formed is located on the lower side. However, as described above, the imaging unit 95 is an infrared illumination unit, an optical system for capturing infrared rays, and an electrical signal corresponding to infrared rays. Since the image pickup means (infrared CCD) or the like is provided, the street 101 can be imaged through the back surface 10b.

  When alignment is performed as described above, the semiconductor wafer 10 on the chuck table 36 is positioned at the coordinate position shown in FIG. FIG. 7B shows a state in which the chuck table 36, that is, the semiconductor wafer 10, is rotated 90 degrees from the state shown in FIG.

  It should be noted that the feed start position coordinate values (A1, A2, A3... Of each street 101 formed on the semiconductor wafer 10 in the state positioned at the coordinate positions shown in FIG. 7 (a) and FIG. 7 (b). An), feed end position coordinate value (B1, B2, B3 ... Bn), feed start position coordinate value (C1, C2, C3 ... Cn) and feed end position coordinate value (D1, D2, D3 ... For Dn), the data of the design value is stored in the memory of the control means 80.

  As described above, when the street 101 formed on the semiconductor wafer 10 held on the chuck table 36 is detected and the detection position is aligned, the chuck table 36 is moved to move the chuck table 36 (a). , The uppermost street 101 is positioned immediately below the objective lens 65 of the position measuring device 6 constituting the position measuring / laser irradiation unit 5. Further, as shown in FIG. 8, the feed start position coordinate value (A1) (see FIG. 7A) that is one end (the left end in FIG. 8) of the street 101 is positioned immediately below the objective lens 65. Then, the position measuring device 6 is operated, and the chuck table 36 is moved in the direction indicated by the arrow X1 in FIG. 8 to the feed end position coordinate value (B1) (height position detecting step). As a result, the height position of the upper surface of the semiconductor wafer 10 is measured by the position measuring device 6 along the uppermost street 101 in FIG. The measured optical path length difference (d) and height position are stored in the memory of the control means 80. In this way, the height position detection process is performed along all the streets 101 formed in the semiconductor wafer 10, and the height position of the upper surface of each street 101 is stored in the memory of the control means 80.

If the height position detection process is performed along all the streets 101 formed on the semiconductor wafer 10 as described above, laser processing for forming a deteriorated layer along the street 101 inside the semiconductor wafer 10 is performed. To do.
In order to carry out this laser processing, first, the chuck table 36 is moved, and the uppermost street 101 in FIG. 7A is used as a condensing lens of the laser beam irradiation means 9 constituting the position measurement / laser irradiation unit 5. It is positioned directly below the functioning objective lens 65. Further, as shown in FIG. 9A, the feed start position coordinate value (A1) (see FIG. 9A) which is one end of the street 101 (the left end in FIG. 9A) is used as the objective lens 65. Position directly below. Then, the condensing point P of the pulse laser beam irradiated from the objective lens 65 constituting the laser beam irradiation means 7 is set to a predetermined depth position from the back surface 10b (upper surface) of the semiconductor wafer 10. Next, the laser beam irradiation means 9 is operated, and the chuck table 36 is moved at a predetermined processing feed rate in the direction indicated by the arrow X1 while irradiating a pulse laser beam from the objective lens 65 (laser processing step). Then, as shown in FIG. 9B, when the irradiation position of the objective lens 65 reaches the other end of the street 101 (the right end in FIG. 9B), the irradiation of the pulse laser beam is stopped and the chuck table 36 is stopped. Stop moving. In this laser processing step, the control means 80 controls the first focusing point position adjusting means 650 based on the height position of the back surface 10b (upper surface) of the street 101 of the semiconductor wafer 10 stored in the memory. The position measuring / laser irradiation unit 5 is moved in the Z-axis direction (condensing point position adjusting direction), and the objective lens 65 constituting the laser beam irradiation means 9 is moved to the street of the semiconductor wafer 10 as shown in FIG. 101 is moved in the vertical direction corresponding to the height position of the back surface 10b (upper surface). In the control of the first condensing point position adjusting unit 650, the control unit 80 controls the optical path length difference (d) to be a predetermined value. As a result, an altered layer 110 is formed in the semiconductor wafer 10 in parallel with the back surface 10b (upper surface) at a predetermined depth from the back surface 10b (upper surface), as shown in FIG. 9B.

In addition, the processing conditions in the said laser processing process are set as follows, for example.
Laser: YVO4 pulse laser Wavelength: 1064nm
Repetition frequency: 100 kHz
Pulse output: 2.5μJ
Condensing spot diameter: φ1μm
Processing feed rate: 100 mm / sec

  As described above, when the laser processing step is executed along all the streets 101 extending in the predetermined direction of the semiconductor wafer 10, the chuck table 36 is rotated by 90 degrees to make the above-mentioned predetermined direction. The laser processing step is executed along each street 101 extending in the orthogonal direction. Thus, if the laser processing step is performed along all the streets 101 formed on the semiconductor wafer 10, the chuck table 36 holding the semiconductor wafer 10 first holds the semiconductor wafer 10 by suction. The semiconductor wafer 10 is released from the suction holding state. Then, the semiconductor wafer 10 is transferred to the dividing step by a transfer means (not shown).

  As mentioned above, although the example which applied the measuring device of the workpiece hold | maintained at the chuck table by this invention to the laser processing machine was shown, the measuring device by this invention is other processing machines, such as a cutting machine equipped with the cutting blade. You may apply to.

2: stationary base 3: chuck table mechanism 36: chuck table 37: processing feed means 374: processing feed amount detection means 38: first index feed means 4: laser beam irradiation unit support mechanism 42: movable support base 43: first 2 index feeding means 5: height measurement / laser irradiation unit 53: focusing point position adjusting means 6: position measuring device 61: light source 62: first light branching means 63: collimation lens 64: second light branching Means 65: Objective lens 66: Condensing lens 67: Reflection mirror 68: Collimation lens 69: Diffraction grating 70: Condensing lens 71: Line image sensor 80: Control means 9: Laser beam irradiation means 91: Pulse laser beam oscillation means 92: Dichroic Mirror 10: Semiconductor wafer

Claims (3)

  1. In the workpiece measuring device held on the chuck table for detecting the position of the workpiece held on the chuck table mounted on the processing machine,
    A light emitting source that emits light having a predetermined wavelength region;
    First light branching means for guiding light from the light emitting source to the first path and for guiding reflected light that travels backward through the first path to the second path;
    A collimation lens that forms light guided to the first path into parallel light;
    Second light branching means for dividing light formed into parallel light by the collimation lens into a third path and a fourth path;
    An objective lens that is disposed in the third path and guides the light guided to the third path to a workpiece held by the chuck table;
    Parallel light disposed between the second light branching means and the objective lens is guided to the third path, and a focusing point is positioned on the objective lens so that light from the objective lens is reflected. A condenser lens that generates pseudo-parallel light;
    A reflecting mirror that is disposed in the fourth path and reflects parallel light guided to the fourth path and reverses the reflected light to the fourth path;
    Reflected by the reflecting mirror, the fourth path, the second light branching unit, the collimation lens, and the first path are reversed to be guided from the first light branching unit to the second path. The reflected light is reflected by the workpiece held on the chuck table, and the first lens and the condenser lens, the second light branching unit, the collimation lens, and the first path are reversed. A diffraction grating that diffracts the interference with the reflected light guided to the second path from the optical branching means;
    An image sensor for detecting light intensity in a predetermined wavelength range of reflected light diffracted by the diffraction grating;
    A spectral interference waveform is obtained based on a detection signal from the image sensor, a waveform analysis is performed based on the spectral interference waveform and a theoretical waveform function, and an optical path length to the reflection mirror in the fourth path is calculated. An optical path length difference from the optical path length to the workpiece held on the chuck table in the third path is obtained, and the workpiece held on the chuck table from the surface of the chuck table based on the optical path length difference Control means for obtaining a distance to the upper surface of
    An apparatus for measuring a workpiece held on a chuck table.
  2.   The measurement of the workpiece held on the chuck table according to claim 1, wherein the waveform analysis performed by the control means obtains the optical path length difference having a high correlation coefficient between the spectral interference waveform and a theoretical waveform function. apparatus.
  3. A chuck table having a holding surface for holding a workpiece, laser beam irradiation means for irradiating the workpiece held on the chuck table with a laser beam, and detecting a height position of the workpiece held on the chuck table A laser processing machine comprising:
    The measuring device includes a light emitting source that emits light having a predetermined wavelength region;
    First light branching means for guiding light from the light emitting source to the first path and for guiding reflected light that travels backward through the first path to the second path;
    A collimation lens that forms light guided to the first path into parallel light;
    Second light branching means for dividing light formed into parallel light by the collimation lens into a third path and a fourth path;
    An objective lens that is disposed in the third path and guides the light guided to the third path to a workpiece held by the chuck table;
    Parallel light disposed between the second light branching means and the objective lens is guided to the third path, and a focusing point is positioned on the objective lens so that light from the objective lens is reflected. A condenser lens that generates pseudo-parallel light;
    A reflecting mirror that is disposed in the fourth path and reflects parallel light guided to the fourth path and reverses the reflected light to the fourth path;
    Reflected by the reflecting mirror, the fourth path, the second light branching unit, the collimation lens, and the first path are reversed to be guided from the first light branching unit to the second path. The reflected light is reflected by the workpiece held on the chuck table, and the first lens and the condenser lens, the second light branching unit, the collimation lens, and the first path are reversed. A diffraction grating that diffracts the interference with the reflected light guided to the second path from the optical branching means;
    An image sensor for detecting light intensity in a predetermined wavelength range of reflected light diffracted by the diffraction grating;
    A spectral interference waveform is obtained based on a detection signal from the image sensor, a waveform analysis is performed based on the spectral interference waveform and a theoretical waveform function, and an optical path length to the reflection mirror in the fourth path is calculated. An optical path length difference from the optical path length to the workpiece held on the chuck table in the third path is obtained, and the workpiece held on the chuck table from the surface of the chuck table based on the optical path length difference And a control means for obtaining a distance to the upper surface of
    The laser beam irradiating unit includes a laser beam oscillating unit that oscillates a laser beam, and a dichroic that is disposed between the condenser lens and the objective lens and changes the direction of the laser beam oscillated from the laser beam oscillating unit toward the objective lens. A mirror,
    Laser processing machine characterized by that.
JP2009279824A 2009-12-09 2009-12-09 Apparatus for measuring workpiece held at chuck table and laser beam machine Pending JP2011122894A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009279824A JP2011122894A (en) 2009-12-09 2009-12-09 Apparatus for measuring workpiece held at chuck table and laser beam machine

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009279824A JP2011122894A (en) 2009-12-09 2009-12-09 Apparatus for measuring workpiece held at chuck table and laser beam machine

Publications (1)

Publication Number Publication Date
JP2011122894A true JP2011122894A (en) 2011-06-23

Family

ID=44286929

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009279824A Pending JP2011122894A (en) 2009-12-09 2009-12-09 Apparatus for measuring workpiece held at chuck table and laser beam machine

Country Status (1)

Country Link
JP (1) JP2011122894A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014099521A (en) * 2012-11-15 2014-05-29 Disco Abrasive Syst Ltd Laser processing method and laser processing device
KR20140122181A (en) 2013-04-05 2014-10-17 가부시기가이샤 디스코 Laser machining apparatus
KR20140141455A (en) 2013-05-31 2014-12-10 가부시기가이샤 디스코 Laser machining apparatus
CN104748686A (en) * 2015-04-21 2015-07-01 中国科学院光电技术研究所 Device and method for using pinhole diffraction waves to position to-be-measured part
DE102018214743A1 (en) 2017-09-06 2019-03-07 Disco Corporation Height detection device and laser processing device
DE102019220030A1 (en) 2018-12-27 2020-07-02 Disco Corporation THICKNESS MEASURING DEVICE
DE102019220031A1 (en) 2018-12-26 2020-07-02 Disco Corporation THICKNESS MEASURING DEVICE
KR20200086624A (en) 2019-01-09 2020-07-17 가부시기가이샤 디스코 Thickness measuring apparatus

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63317706A (en) * 1987-06-22 1988-12-26 Dainippon Screen Mfg Co Ltd Measuring method for minute height difference and measuring apparatus thereof
JP2553276B2 (en) * 1991-03-27 1996-11-13 エイチイー・ホールディングス・インコーポレーテッド・ディービーエー・ヒューズ・エレクトロニクス Three-wavelength optical measuring device and method
JP2006132996A (en) * 2004-11-02 2006-05-25 Shiyoufuu:Kk Fourier domain optical coherence tomography for dental measurement
JP2008170366A (en) * 2007-01-15 2008-07-24 Disco Abrasive Syst Ltd Device of measuring workpiece held by chuck table, and laser beam processing machine
JP2008209299A (en) * 2007-02-27 2008-09-11 Disco Abrasive Syst Ltd Device for measuring workpiece held in chuck table, and laser processing machine
JP2009063446A (en) * 2007-09-06 2009-03-26 Disco Abrasive Syst Ltd Device for detecting height position of workpiece held on chuck table
JP2009070920A (en) * 2007-09-11 2009-04-02 Disco Abrasive Syst Ltd Height position detector for work held on chuck table
JP2009262219A (en) * 2008-04-28 2009-11-12 Disco Abrasive Syst Ltd Laser beam machining apparatus
JP2009270939A (en) * 2008-05-08 2009-11-19 Keyence Corp Optical displacement gauge

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63317706A (en) * 1987-06-22 1988-12-26 Dainippon Screen Mfg Co Ltd Measuring method for minute height difference and measuring apparatus thereof
JP2553276B2 (en) * 1991-03-27 1996-11-13 エイチイー・ホールディングス・インコーポレーテッド・ディービーエー・ヒューズ・エレクトロニクス Three-wavelength optical measuring device and method
JP2006132996A (en) * 2004-11-02 2006-05-25 Shiyoufuu:Kk Fourier domain optical coherence tomography for dental measurement
JP2008170366A (en) * 2007-01-15 2008-07-24 Disco Abrasive Syst Ltd Device of measuring workpiece held by chuck table, and laser beam processing machine
JP2008209299A (en) * 2007-02-27 2008-09-11 Disco Abrasive Syst Ltd Device for measuring workpiece held in chuck table, and laser processing machine
JP2009063446A (en) * 2007-09-06 2009-03-26 Disco Abrasive Syst Ltd Device for detecting height position of workpiece held on chuck table
JP2009070920A (en) * 2007-09-11 2009-04-02 Disco Abrasive Syst Ltd Height position detector for work held on chuck table
JP2009262219A (en) * 2008-04-28 2009-11-12 Disco Abrasive Syst Ltd Laser beam machining apparatus
JP2009270939A (en) * 2008-05-08 2009-11-19 Keyence Corp Optical displacement gauge

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014099521A (en) * 2012-11-15 2014-05-29 Disco Abrasive Syst Ltd Laser processing method and laser processing device
US9434023B2 (en) 2013-04-05 2016-09-06 Disco Corporation Laser machining apparatus
KR20140122181A (en) 2013-04-05 2014-10-17 가부시기가이샤 디스코 Laser machining apparatus
KR102113353B1 (en) * 2013-04-05 2020-05-20 가부시기가이샤 디스코 Laser machining apparatus
JP2014200822A (en) * 2013-04-05 2014-10-27 株式会社ディスコ Laser beam machining apparatus
KR20140141455A (en) 2013-05-31 2014-12-10 가부시기가이샤 디스코 Laser machining apparatus
KR102114504B1 (en) * 2013-05-31 2020-05-22 가부시기가이샤 디스코 Laser machining apparatus
JP2014233731A (en) * 2013-05-31 2014-12-15 株式会社ディスコ Laser processor
CN104748686A (en) * 2015-04-21 2015-07-01 中国科学院光电技术研究所 Device and method for using pinhole diffraction waves to position to-be-measured part
CN104748686B (en) * 2015-04-21 2017-07-11 中国科学院光电技术研究所 A kind of device and method that part positioning to be measured is carried out using pinhole difiration ripple
KR20190027333A (en) 2017-09-06 2019-03-14 가부시기가이샤 디스코 Height detection apparatus and laser machining apparatus
DE102018214743A1 (en) 2017-09-06 2019-03-07 Disco Corporation Height detection device and laser processing device
DE102019220031A1 (en) 2018-12-26 2020-07-02 Disco Corporation THICKNESS MEASURING DEVICE
KR20200080144A (en) 2018-12-26 2020-07-06 가부시기가이샤 디스코 Thickness measuring apparatus
DE102019220030A1 (en) 2018-12-27 2020-07-02 Disco Corporation THICKNESS MEASURING DEVICE
KR20200081240A (en) 2018-12-27 2020-07-07 가부시기가이샤 디스코 Thickness measuring apparatus
KR20200086624A (en) 2019-01-09 2020-07-17 가부시기가이샤 디스코 Thickness measuring apparatus

Similar Documents

Publication Publication Date Title
KR101975607B1 (en) Laser machining apparatus
JP6645960B2 (en) Method of measuring depth of penetration of laser beam into workpiece and laser processing device
TWI326627B (en) Laser process in manufacturing method and device thereof
DE102005019358B4 (en) Laser beam processing machine
TWI408023B (en) Laser processing device
JP4734101B2 (en) Laser processing equipment
JP5036276B2 (en) Laser processing equipment
DE102007061248B4 (en) Meter and laser beam machine for wafers
KR101845187B1 (en) Laser dicing device and dicing method
JP5912293B2 (en) Laser processing equipment
CN101314197B (en) Laser beam machining apparatus
EP1653477B1 (en) Surface texture measuring instrument
JP2004188422A (en) Device and method for machining laser beam
JP4885658B2 (en) Drilling hole depth detection device and laser processing machine
US8581144B2 (en) Laser processing apparatus and laser processing method
KR101321453B1 (en) Real time target topography tracking during laser processing
EP1347266A2 (en) Device for measuring an object
DE102008024468B4 (en) Laser processing machine
CN1902026B (en) Laser beam machining system
US8040520B2 (en) Device for detecting the edges of a workpiece, and a laser beam processing machine
CN101226892B (en) Measuring apparatus and laser beam machining apparatus
TWI522600B (en) Method of spot shape detection for laser light
JP4640174B2 (en) Laser dicing equipment
US7994452B2 (en) Laser beam machining apparatus
WO2005065880A1 (en) Laser processing method and device

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20121126

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130812

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130820

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131018

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20140617