TW201533157A - Resin composition, cured film and manufacturing method thereof, patterned cured film and manufacturing method thereof, and electronic part - Google Patents

Resin composition, cured film and manufacturing method thereof, patterned cured film and manufacturing method thereof, and electronic part Download PDF

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TW201533157A
TW201533157A TW104103820A TW104103820A TW201533157A TW 201533157 A TW201533157 A TW 201533157A TW 104103820 A TW104103820 A TW 104103820A TW 104103820 A TW104103820 A TW 104103820A TW 201533157 A TW201533157 A TW 201533157A
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resin composition
group
cured film
component
film
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Keishi Ono
Tetsuya Enomoto
Masayuki Ohe
Keiko Suzuki
Kazuya Soejima
Etsuharu Suzuki
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Hitachi Chem Dupont Microsys
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    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
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    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1046Polyimides containing oxygen in the form of ether bonds in the main chain
    • C08G73/1053Polyimides containing oxygen in the form of ether bonds in the main chain with oxygen only in the tetracarboxylic moiety
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1067Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
    • C08G73/1071Wholly aromatic polyimides containing oxygen in the form of ether bonds in the main chain
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    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D179/00Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09D161/00 - C09D177/00
    • C09D179/04Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C09D179/08Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031Organic compounds not covered by group G03F7/029
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    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/037Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02107Forming insulating materials on a substrate
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means

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Abstract

This invention provides a resin composition including: (a) a polyimide precursor having a structure unit represented by the following formula (1) and (b) a photo-polymerizable compound having ethyleny unsaturated groups and isocyanuric ring structures. In the formula (1), R1 is a tetravalent organic group, R2 is a divalent organic group. R3 and R4 are independently a hydrogen atom, an alkyl group with a carbon number of 1 to 20, a cycloalkyl group with a carbon number of 3 to 20 or a monovalent organic group having a carbon-carbon unsaturated double bonds, respectively.

Description

含有聚醯亞胺前驅體的樹脂組成物、硬化膜的製造方法及電 子零件 Resin composition containing polyimide precursor, method for producing cured film, and electricity Subpart

本發明是有關於一種含有聚醯亞胺前驅體的樹脂組成物、使用該樹脂組成物的硬化膜的製造方法及電子零件。 The present invention relates to a resin composition containing a polyimide precursor, a method for producing a cured film using the resin composition, and an electronic component.

隨著半導體積體電路的微細化,而需要用以降低介電常數的稱為低介電常數(low-k)層的層間絕緣膜。由於low-k層具有空孔結構,故而存在機械強度降低的問題。為了保護此種機械強度弱的層間絕緣膜,而使用由聚醯亞胺樹脂形成的硬化膜。對於該硬化膜,要求厚膜形成性(例如5μm以上)或高彈性模數化(例如4GPa以上)等特性。但是,存在如下情況:隨著厚膜化及高彈性模數化,硬化後的應力增大,半導體晶圓的翹曲變大,而導致在搬送或晶圓固定時產生不良情況。 As the semiconductor integrated circuit is miniaturized, an interlayer insulating film called a low dielectric constant (low-k) layer for lowering the dielectric constant is required. Since the low-k layer has a pore structure, there is a problem that mechanical strength is lowered. In order to protect such an interlayer insulating film having a weak mechanical strength, a cured film formed of a polyimide resin is used. The cured film is required to have properties such as thick film formability (for example, 5 μm or more) or high elastic modulus (for example, 4 GPa or more). However, as the thickness is increased and the modulus of elasticity is increased, the stress after hardening increases, and the warpage of the semiconductor wafer becomes large, which causes a problem in transportation or wafer fixing.

作為使由聚醯亞胺樹脂形成的硬化膜進行低應力化的方法,例如可列舉使用使具有特定官能基的鄰苯二甲酸化合物與酸成分進行共聚縮合而成的聚醯胺的方法(例如專利文獻1)。然而,近年來謀求在低溫下的硬化,於使上述聚醯胺進行低溫硬化 的情況下,在獲得具有充分性能的硬化膜的方面尚存改善餘地。 As a method of reducing the stress of the cured film formed of the polyimide resin, for example, a method of copolymerizing and condensing a phthalic acid compound having a specific functional group with an acid component is used (for example, Patent Document 1). However, in recent years, hardening at a low temperature has been sought, and the above polyamine has been subjected to low-temperature hardening. In the case of obtaining a cured film having sufficient performance, there is still room for improvement.

[先前技術文獻] [Previous Technical Literature]

[專利文獻] [Patent Literature]

[專利文獻1]國際公開WO2006/008991號公報 [Patent Document 1] International Publication WO2006/008991

另外,為了實現低應力化,而對i射線透射率高的含有氟的聚醯亞胺前驅體進行研究。然而,本發明者等人的研究結果為,判明將含有該等聚醯亞胺前驅體的樹脂組成物加熱硬化後獲得的硬化膜容易吸收抗蝕劑製程中使用的有機溶劑而膨潤。此處所謂膨潤是指如下現象:於將聚醯亞胺硬化膜在一定溫度(例如70℃)的N-甲基吡咯啶酮中浸漬一定時間(例如20分鐘)時,硬化膜會吸收溶劑而使體積膨脹。 Further, in order to achieve low stress, a fluorine-containing polyimide precursor having a high i-ray transmittance has been studied. However, as a result of investigation by the inventors of the present invention, it has been found that the cured film obtained by heat-hardening the resin composition containing the polyimide precursors is easily swelled by absorbing the organic solvent used in the resist process. The term "swelling" as used herein refers to a phenomenon in which a cured film absorbs a solvent when the polyimide film is immersed in N-methylpyrrolidone at a certain temperature (for example, 70 ° C) for a certain period of time (for example, 20 minutes). Expand the volume.

本發明的目的在於提供一種樹脂組成物,該樹脂組成物即便在300℃以下的低溫下進行硬化的情況下,亦可獲得低應力及低膨潤的硬化膜。 An object of the present invention is to provide a resin composition which can obtain a cured film having low stress and low swelling even when it is cured at a low temperature of 300 ° C or lower.

根據本發明,可提供以下樹脂組成物。 According to the present invention, the following resin composition can be provided.

1.一種樹脂組成物,其包含下述(a)成分及(b)成分:(a)具有下述式(1)所表示的結構單元的聚醯亞胺前驅體, A resin composition comprising the following component (a) and component (b): (a) a polyimide intermediate having a structural unit represented by the following formula (1),

(式中,R1為四價有機基,R2為二價有機基;R3及R4分別獨立為氫原子、碳數1~20的烷基、碳數3~20的環烷基、或具有 碳-碳不飽和雙鍵的一價有機基);(b)具有乙烯性不飽和基及異三聚氰酸環結構的光聚合性化合物。 (wherein R 1 is a tetravalent organic group, and R 2 is a divalent organic group; and R 3 and R 4 each independently represent a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, a cycloalkyl group having 3 to 20 carbon atoms, Or a monovalent organic group having a carbon-carbon unsaturated double bond; (b) a photopolymerizable compound having an ethylenically unsaturated group and an iso-cyanuric acid ring structure.

2.如1所述的樹脂組成物,其中上述式(1)的R2為下述式(2)所表示的二價有機基, 2. The resin composition according to 1, wherein R 2 of the above formula (1) is a divalent organic group represented by the following formula (2),

(式中,R5~R12分別獨立為氫原子、氟原子、或一價有機基,R5~R12的至少一者為氟原子、甲基或三氟甲基)。 (wherein R 5 to R 12 each independently represent a hydrogen atom, a fluorine atom or a monovalent organic group, and at least one of R 5 to R 12 is a fluorine atom, a methyl group or a trifluoromethyl group).

3.如1或2所述的樹脂組成物,其中上述式(1)的R2為下述式(3)所表示的二價有機基, 3. The resin composition according to the above formula (1), wherein R 2 of the above formula (1) is a divalent organic group represented by the following formula (3),

(式中,R13及R14分別獨立為氟原子或三氟甲基)。 (wherein R 13 and R 14 are each independently a fluorine atom or a trifluoromethyl group).

4.如1至3中任一項所述的樹脂組成物,其中上述光聚合性化合物包含下述式(4)所表示的結構, 4. The resin composition according to any one of 1 to 3, wherein the photopolymerizable compound contains a structure represented by the following formula (4).

(式中,R24為氫原子或甲基,X為伸烷基,n為1~25的整數)。 (wherein R 24 is a hydrogen atom or a methyl group, X is an alkylene group, and n is an integer of 1 to 25).

5.如4所述的樹脂組成物,其中上述光聚合性化合物為下述式(5)所表示的化合物, 5. The resin composition according to 4, wherein the photopolymerizable compound is a compound represented by the following formula (5),

(式中,R21~R23分別獨立為一價有機基,至少一者為上述式(4)所表示的基)。 (wherein R 21 to R 23 are each independently a monovalent organic group, and at least one is a group represented by the above formula (4)).

6.如1至5中任一項所述的樹脂組成物,其中上述(b)成分相對於上述(a)成分100質量份而含有0.01質量份~50質量份。 In the resin composition according to any one of the above aspects, the component (b) is contained in an amount of from 0.01 part by mass to 50 parts by mass per 100 parts by mass of the component (a).

7.如1至6中任一項所述的樹脂組成物,其更包含藉由照射活性光線而產生自由基的化合物作為(c)成分。 7. The resin composition according to any one of 1 to 6, which further comprises a compound which generates a radical by irradiation with active light as the component (c).

8.如7所述的樹脂組成物,其中上述藉由照射活性光線而產生自由基的化合物為肟酯化合物。 8. The resin composition according to 7, wherein the compound which generates a radical by irradiation with active light is an oxime ester compound.

9.如1至8中任一項所述的樹脂組成物,其更包含除(b)成分以外的光聚合性化合物作為(e)成分。 9. The resin composition according to any one of 1 to 8, which further comprises a photopolymerizable compound other than the component (b) as the component (e).

10.如9所述的樹脂組成物,其中上述光聚合性化合物為(甲基)丙烯酸系化合物。 10. The resin composition according to 9, wherein the photopolymerizable compound is a (meth)acrylic compound.

11.一種硬化膜的製造方法,包括如下步驟:將如1至10中任一項所述的樹脂組成物塗佈至基板上並加以乾燥而形成塗膜;及對上述塗膜進行加熱處理。 A method for producing a cured film, comprising the steps of: applying a resin composition according to any one of 1 to 10 to a substrate and drying the film to form a coating film; and subjecting the coating film to heat treatment.

12.一種圖案硬化膜的製造方法,包括如下步驟:將如1至10中任一項所述的樹脂組成物塗佈至基板上並加以乾燥而形成塗膜;於對上述塗膜照射活性光線後,進行顯影而獲得圖案樹脂膜;及對上述圖案樹脂膜進行加熱處理。 A method of producing a patterned cured film, comprising the steps of: applying a resin composition according to any one of 1 to 10 onto a substrate and drying to form a coating film; and irradiating the coating film with active light Thereafter, development is performed to obtain a pattern resin film; and the pattern resin film is subjected to heat treatment.

13.一種硬化膜,其是藉由如11所述的硬化膜的製造方法而獲得。 A cured film obtained by the method for producing a cured film according to 11.

14.一種圖案硬化膜,其是藉由如12所述的圖案硬化膜的製造方法而獲得。 A pattern cured film obtained by the method for producing a pattern cured film as described in 12.

15.一種電子零件,其具有如13所述的硬化膜或如14所述的圖案硬化膜。 An electronic component having a cured film as described in 13 or a patterned cured film as described in 14.

根據本發明,可提供一種樹脂組成物,該樹脂組成物即便在300℃以下的低溫下進行硬化的情況下,亦可獲得低應力及低膨潤的硬化膜。 According to the invention, it is possible to provide a resin composition which can obtain a cured film having low stress and low swelling even when it is cured at a low temperature of 300 ° C or lower.

1‧‧‧層間絕緣層(層間絕緣膜) 1‧‧‧Interlayer insulation (interlayer insulation film)

2‧‧‧配線層 2‧‧‧Wiring layer

3‧‧‧絕緣層(絕緣膜) 3‧‧‧Insulation (insulation film)

4‧‧‧表面保護層(表面保護膜) 4‧‧‧Surface protection layer (surface protection film)

5‧‧‧焊墊部 5‧‧‧ solder pad

6‧‧‧再配線層 6‧‧‧Rewiring layer

7‧‧‧導電性球 7‧‧‧Electrical ball

8‧‧‧芯 8‧‧ ‧ core

9‧‧‧面塗層 9‧‧‧Face coating

10‧‧‧障壁金屬 10‧‧‧Bound metal

11‧‧‧軸環 11‧‧‧ collar

12‧‧‧底膠 12‧‧‧Bottom

圖1是使用本發明的樹脂組成物所製造的電子零件(半導體裝置)的一實施方式的概略剖面圖。 Fig. 1 is a schematic cross-sectional view showing an embodiment of an electronic component (semiconductor device) manufactured using the resin composition of the present invention.

以下,對本發明的樹脂組成物及使用該樹脂組成物的硬化膜的製造方法進行說明。此外,本發明並不受該實施方式限定。 Hereinafter, a resin composition of the present invention and a method for producing a cured film using the resin composition will be described. Further, the invention is not limited by the embodiment.

本發明的樹脂組成物包含下述(a)成分及(b)成分。 The resin composition of the present invention contains the following components (a) and (b).

[(a)成分] [(a) ingredient]

具有下述式(1)所表示的結構單元的聚醯亞胺前驅體 Polyimine precursor having a structural unit represented by the following formula (1)

(式(1)中,R1為四價有機基,R2為二價有機基;R3及R4分別獨立為氫原子、碳數1~20的烷基、碳數3~20的環烷基、或具有碳-碳不飽和雙鍵的一價有機基) (In the formula (1), R 1 is a tetravalent organic group, and R 2 is a divalent organic group; and R 3 and R 4 each independently represent a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, and a ring having 3 to 20 carbon atoms; An alkyl group or a monovalent organic group having a carbon-carbon unsaturated double bond)

[(b)成分] [(b) ingredients]

具有乙烯性不飽和基及異三聚氰酸環結構的光聚合性化合物先前是在370℃左右的高溫下進行胺前驅體的加熱硬化,但本發明的樹脂組成物由於包含(a)成分及(b)成分兩者,故而即便在300℃以下的低溫下進行硬化的情況下,亦可獲得應力低且不易產生膨潤的硬化膜。於未使用(a)成分的情況下,例如使用聚苯并唑前驅體的情況下,即便併用(b)成分,針對應力及膨潤的效果亦低。 The photopolymerizable compound having an ethylenically unsaturated group and an iso-cyanuric acid ring structure is previously subjected to heat hardening of an amine precursor at a high temperature of about 370 ° C, but the resin composition of the present invention contains (a) a component and Since both of the components (b) are cured at a low temperature of 300 ° C or lower, a cured film having low stress and being less likely to swell can be obtained. In the case where the component (a) is not used, for example, polybenzoic acid is used. In the case of the azole precursor, even if the component (b) is used in combination, the effect on stress and swelling is low.

以下,對本發明的樹脂組成物的各成分進行說明。 Hereinafter, each component of the resin composition of the present invention will be described.

(a)成分:具有下述式(1)所表示的結構單元的聚醯亞胺前驅體 Component (a): Polyimine precursor having a structural unit represented by the following formula (1)

式(1)中的R1是源自用作原料的四羧酸或其二酐的結構。就硬化膜的應力、i射線透射率的觀點而言,R1較佳為下述式(2a)~式(2e)所表示的基中的任一者。 R 1 in the formula (1) is a structure derived from a tetracarboxylic acid or a dianhydride thereof used as a raw material. From the viewpoint of the stress and the i-ray transmittance of the cured film, R 1 is preferably any one of the groups represented by the following formulas (2a) to (2e).

[化7] [Chemistry 7]

(式(2d)中,X及Y分別獨立地表示不與鍵結的苯環共軛的二價基或單鍵;式(2e)中,Z為醚鍵(-O-)或硫醚鍵(-S-)) (In the formula (2d), X and Y each independently represent a divalent group or a single bond which is not conjugated to the bonded benzene ring; in the formula (2e), Z is an ether bond (-O-) or a thioether bond (-S-))

式(2d)的X及Y的「不與鍵結的苯環共軛的二價基」例如為-O-、-S-、或下述式所表示的二價基。 The "divalent group which is not conjugated to the bonded benzene ring" of X and Y of the formula (2d) is, for example, -O-, -S- or a divalent group represented by the following formula.

(式中,R12為碳原子或矽原子;R13分別獨立為氫原子或氟原子等鹵素原子) (wherein R 12 is a carbon atom or a halogen atom; and R 13 is independently a halogen atom such as a hydrogen atom or a fluorine atom)

該等中,R1更佳為源自均苯四甲酸二酐、2,3,6,7-萘四羧酸二酐或3,3',4,4'-聯苯四羧酸二酐的結構。該等可單獨使用或組合兩種以上而使用。 Among these, R 1 is more preferably derived from pyromellitic dianhydride, 2,3,6,7-naphthalenetetracarboxylic dianhydride or 3,3',4,4'-biphenyltetracarboxylic dianhydride. Structure. These may be used alone or in combination of two or more.

於不使硬化膜的應力、i射線透射率降低的範圍內,R1的原料亦可與如下二酐組合而使用:3,3',4,4'-二苯甲酮四羧酸二酐、1,2,5,6-萘四羧酸二酐、2,3,5,6-吡啶四羧酸二酐、1,4,5,8-萘四羧酸二酐、3,4,9,10-苝四羧酸二酐、間聯三苯-3,3',4,4'-四羧酸二酐、對聯三苯-3,3',4,4'-四羧酸二酐、1,1,1,3,3,3-六氟-2,2-雙(2,3-二羧基苯基)丙烷二酐、1,1,1,3,3,3-六氟-2,2-雙(3,4-二羧基苯基)丙烷二酐、2,2-雙(2,3-二羧基苯基)丙烷二酐、2,2-雙(3,4-二羧基苯基) 丙烷二酐、2,2-雙{4'-(2,3-二羧基苯氧基)苯基}丙烷二酐、2,2-雙{4'-(3,4-二羧基苯氧基)苯基}丙烷二酐、1,1,1,3,3,3-六氟-2,2-雙{4'-(2,3-二羧基苯氧基)苯基}丙烷二酐、1,1,1,3,3,3-六氟-2,2-雙{4'-(3,4-二羧基苯氧基)苯基}丙烷二酐、4,4'-氧雙鄰苯二甲酸二酐、4,4'-磺醯基雙鄰苯二甲酸二酐等。 In the range where the stress and the i-ray transmittance of the cured film are not lowered, the raw material of R 1 may be used in combination with the following dianhydride: 3,3',4,4'-benzophenonetetracarboxylic dianhydride. 1,2,5,6-naphthalenetetracarboxylic dianhydride, 2,3,5,6-pyridinetetracarboxylic dianhydride, 1,4,5,8-naphthalenetetracarboxylic dianhydride, 3,4, 9,10-decane tetracarboxylic dianhydride, m-triphenyl-3,3',4,4'-tetracarboxylic dianhydride, conjugated triphenyl-3,3',4,4'-tetracarboxylic acid Anhydride, 1,1,1,3,3,3-hexafluoro-2,2-bis(2,3-dicarboxyphenyl)propane dianhydride, 1,1,1,3,3,3-hexafluoro -2,2-bis(3,4-dicarboxyphenyl)propane dianhydride, 2,2-bis(2,3-dicarboxyphenyl)propane dianhydride, 2,2-bis(3,4-di Carboxyphenyl) propane dianhydride, 2,2-bis{4'-(2,3-dicarboxyphenoxy)phenyl}propane dianhydride, 2,2-bis{4'-(3,4-di Carboxyphenoxy)phenyl}propane dianhydride, 1,1,1,3,3,3-hexafluoro-2,2-bis{4'-(2,3-dicarboxyphenoxy)phenyl} Propane dianhydride, 1,1,1,3,3,3-hexafluoro-2,2-bis{4'-(3,4-dicarboxyphenoxy)phenyl}propane dianhydride, 4,4' - Oxydiphthalic dianhydride, 4,4'-sulfonyl diphthalic dianhydride, and the like.

式(1)中的R2是源自用作原料的二胺的結構。(a)成分中,式(1)中的R2較佳為下述式(2)所表示的二價有機基。 R 2 in the formula (1) is a structure derived from a diamine used as a raw material. In the component (a), R 2 in the formula (1) is preferably a divalent organic group represented by the following formula (2).

(式(2)中,R5~R12分別獨立為氫原子、氟原子、或一價有機基,R5~R12的至少一者為氟原子、甲基或三氟甲基) (In the formula (2), R 5 to R 12 each independently represent a hydrogen atom, a fluorine atom or a monovalent organic group, and at least one of R 5 to R 12 is a fluorine atom, a methyl group or a trifluoromethyl group)

作為R5~R12的一價有機基,例如可列舉碳數1~10(較佳為碳數1~6)的烷基、碳數1~10(較佳為碳數1~6)的氟烷基。 Examples of the monovalent organic group of R 5 to R 12 include an alkyl group having 1 to 10 carbon atoms (preferably 1 to 6 carbon atoms) and a carbon number of 1 to 10 (preferably having 1 to 6 carbon atoms). Fluoroalkyl.

(a)成分中,式(1)中的R2更佳為下述式(3)所表示的二價有機基。低溫硬化時的膨潤現象有於使用i射線透射率高的含有氟的聚醯亞胺前驅體時容易產生的傾向。 In the component (a), R 2 in the formula (1) is more preferably a divalent organic group represented by the following formula (3). The swelling phenomenon at the time of low-temperature curing tends to occur when a fluorine-containing polyimide precursor having a high i-ray transmittance is used.

(式(3)中,R13及R14分別獨立為氟原子或三氟甲基) (In the formula (3), R 13 and R 14 are each independently a fluorine atom or a trifluoromethyl group)

(a)成分中,式(1)中的R2為式(3)所表示的結構單元的比率較佳為1mol%(莫耳百分比)~100mol%,更佳為10mol%~100mol%,進而較佳為30mol%~100mol%。 In the component (a), the ratio of R 2 in the formula (1) to the structural unit represented by the formula (3) is preferably from 1 mol% (% by mole) to 100 mol%, more preferably from 10 mol% to 100 mol%, and further It is preferably from 30 mol% to 100 mol%.

作為式(2)或(3)所表示的結構,可列舉2,2'-雙(三氟甲基)-4,4'-二胺基聯苯、2,2'-雙(氟)-4,4'-二胺基聯苯、4,4'-二胺基八氟聯苯。該等可單獨使用或組合兩種以上而使用。 Examples of the structure represented by the formula (2) or (3) include 2,2'-bis(trifluoromethyl)-4,4'-diaminobiphenyl and 2,2'-bis(fluoro)- 4,4'-diaminobiphenyl, 4,4'-diamino octafluorobiphenyl. These may be used alone or in combination of two or more.

另外,亦可使用賦予除式(2)、(3)以外的結構的二胺化合物。例如,可列舉:對苯二胺、間苯二胺、對苯二甲胺、間苯二甲胺、1,5-二胺基萘、聯苯胺、4,4'-(或3,4'-、3,3'-、2,4'-、2,2'-)二胺基二苯醚、4,4'-(或3,4'-、3,3'-、2,4'-、2,2'-)二胺基二苯基碸、4,4'-(或3,4'-、3,3'-、2,4'-、2,2'-)二胺基二苯硫醚、鄰聯甲苯胺、鄰聯甲苯胺碸、4,4'-亞甲基-雙(2,6-二乙基苯胺)、4,4'-亞甲基-雙(2,6-二異丙基苯胺)、2,4-二胺基均三甲苯、1,5-二胺基萘、4,4'-二苯甲酮二胺、雙-{4-(4'-胺基苯氧基)苯基}碸、2,2-雙{4-(4'-胺基苯氧基)苯基}丙烷、3,3'-二甲基-4,4'-二胺基二苯基甲烷、3,3',5,5'-四甲基-4,4'-二胺基二苯基甲烷、雙{4-(3'-胺基苯氧基)苯基}碸、2,2-雙(4-胺基苯基)丙烷、二胺基聚矽氧烷等。該等可單獨使用或組合兩種以上而使用。 Further, a diamine compound which imparts a structure other than the formulas (2) and (3) can also be used. For example, p-phenylenediamine, m-phenylenediamine, p-xylylenediamine, m-xylylenediamine, 1,5-diaminonaphthalene, benzidine, 4,4'- (or 3,4' -, 3,3'-, 2,4'-, 2,2'-)diaminodiphenyl ether, 4,4'- (or 3,4'-, 3,3'-, 2,4' -, 2, 2'-) diaminodiphenyl fluorene, 4,4'- (or 3,4'-, 3,3'-, 2,4'-, 2,2'-)diamine Diphenyl sulfide, o-toluidine, o-toluidine oxime, 4,4'-methylene-bis(2,6-diethylaniline), 4,4'-methylene-bis (2, 6-diisopropylaniline), 2,4-diamino mesitylene, 1,5-diaminonaphthalene, 4,4'-benzophenone diamine, bis-{4-(4'- Aminophenoxy)phenyl}anthracene, 2,2-bis{4-(4'-aminophenoxy)phenyl}propane, 3,3'-dimethyl-4,4'-diamine Diphenylmethane, 3,3',5,5'-tetramethyl-4,4'-diaminodiphenylmethane, bis{4-(3'-aminophenoxy)phenyl} Anthracene, 2,2-bis(4-aminophenyl)propane, diaminopolyoxyalkylene, and the like. These may be used alone or in combination of two or more.

式(1)中的R3及R4分別獨立為氫原子、碳數1~20(較佳為碳數1~10、更佳為碳數1~6)的烷基、碳數3~20(較佳為碳數5~15、更佳為碳數6~12)的環烷基、或具有碳-碳不飽和雙鍵的一價有機基。 R 3 and R 4 in the formula (1) are each independently a hydrogen atom, an alkyl group having 1 to 20 carbon atoms (preferably having 1 to 10 carbon atoms, more preferably 1 to 6 carbon atoms), and 3 to 20 carbon atoms. A cycloalkyl group (preferably having a carbon number of 5 to 15, more preferably 6 to 12 carbon atoms) or a monovalent organic group having a carbon-carbon unsaturated double bond.

作為碳數1~20的烷基,可列舉甲基、乙基、正丙基、2-丙基、正丁基等。作為碳數3~20的環烷基,可列舉環丙基、 環丁基、環戊基、環己基、金剛烷基等。 Examples of the alkyl group having 1 to 20 carbon atoms include a methyl group, an ethyl group, a n-propyl group, a 2-propyl group, and an n-butyl group. Examples of the cycloalkyl group having 3 to 20 carbon atoms include a cyclopropyl group. Cyclobutyl, cyclopentyl, cyclohexyl, adamantyl and the like.

作為具有碳-碳不飽和雙鍵的一價有機基,例如可列舉具有(甲基)丙烯醯基的有機基。具體而言,可列舉烷基的碳數為1~10的(甲基)丙烯醯氧基烷基。此外,所謂「(甲基)丙烯醯基」表示「甲基丙烯醯基」或「丙烯醯基」,所謂「(甲基)丙烯醯氧基」表示「甲基丙烯醯氧基」或「丙烯醯氧基」,「(甲基)丙烯酸酯」表示「甲基丙烯酸酯」或「丙烯酸酯」。 Examples of the monovalent organic group having a carbon-carbon unsaturated double bond include an organic group having a (meth)acryl fluorenyl group. Specifically, a (meth) acryloxyalkyl group having an alkyl group having 1 to 10 carbon atoms is exemplified. In addition, the "(meth)acryloyl group" means "methacryl fluorenyl group" or "acryloyl fluorenyl group", and the "(meth) propylene fluorenyl group" means "methacryloyloxy group" or "propylene". "Methoxy", "(meth)acrylate" means "methacrylate" or "acrylate".

作為烷基的碳數為1~10的(甲基)丙烯醯氧基烷基,可列舉(甲基)丙烯醯氧基乙基、(甲基)丙烯醯氧基丙基、(甲基)丙烯醯氧基丁基等。 Examples of the (meth)acryloxyalkyl group having 1 to 10 carbon atoms in the alkyl group include (meth)acryloxyethyl, (meth)acryloxypropyl, and (methyl) groups. Acryloxy butyl and the like.

於R3及R4的至少一者為具有碳-碳不飽和雙鍵的一價有機基的情況下,與藉由照射活性光線而產生自由基的化合物進行組合,藉此製成能夠利用自由基聚合使分子鏈間交聯的感光性樹脂組成物。 When at least one of R 3 and R 4 is a monovalent organic group having a carbon-carbon unsaturated double bond, it is combined with a compound which generates a radical by irradiation with active light, thereby making it possible to utilize freely A photosensitive resin composition which polymerizes to crosslink molecular chains.

本發明的(a)成分可使四羧酸二酐與二胺進行加成聚合而合成。另外,可藉由如下方式合成,即,於使式(5)所表示的四羧酸二酐成為二酯衍生物後,轉化為式(6)所表示的醯氯化物,並與式(7)所表示的二胺進行反應。合成方法可選自公知方法。 The component (a) of the present invention can be synthesized by subjecting tetracarboxylic dianhydride to diamine polymerization. Further, it can be synthesized by converting the tetracarboxylic dianhydride represented by the formula (5) into a diester derivative, and converting it into a hydrazine chloride represented by the formula (6), and formula (7). The diamine represented by the reaction is carried out. The synthesis method can be selected from known methods.

[化11] [11]

(式(5)、式(6)及式(7)中,R1~R4與式(1)相同) (In the formulas (5), (6) and (7), R 1 to R 4 are the same as in the formula (1))

關於(a)成分即聚醯亞胺前驅體的分子量,較佳為以聚苯乙烯換算的重量平均分子量為10000~100000,更佳為15000~100000,進而較佳為20000~85000。若重量平均分子量大於10000,則可充分降低硬化後的應力。另外,若小於100000,則可提高於溶劑中的溶解性,溶液黏度減小而操作性提高。此外,重量平均分子量可藉由凝膠滲透色譜法進行測定,可藉由使用標準聚苯乙烯校準曲線進行換算而求出。 The molecular weight of the polyimine imine precursor of the component (a) is preferably 10,000 to 100,000, more preferably 15,000 to 100,000, still more preferably 20,000 to 85,000, in terms of polystyrene. If the weight average molecular weight is more than 10,000, the stress after hardening can be sufficiently reduced. Further, when it is less than 100,000, the solubility in a solvent can be improved, the viscosity of the solution is reduced, and workability is improved. Further, the weight average molecular weight can be measured by gel permeation chromatography, and can be obtained by conversion using a standard polystyrene calibration curve.

合成(a)成分時四羧酸二酐與二胺的莫耳比通常為1.0,但就控制分子量或末端殘基的目的而言,亦可為0.7~1.3的範圍的莫耳比。於莫耳比為0.7以下或為1.3以上的情況下,有所獲得的聚醯亞胺前驅體的分子量變小,不充分地表現出硬化後的低應力性的擔憂。 The molar ratio of the tetracarboxylic dianhydride to the diamine in the synthesis of the component (a) is usually 1.0, but it may be a molar ratio in the range of 0.7 to 1.3 for the purpose of controlling the molecular weight or the terminal residue. When the molar ratio is 0.7 or less or 1.3 or more, the molecular weight of the obtained polyimide intermediate precursor is small, and the low stress property after hardening is not sufficiently exhibited.

作為將本發明的(a)成分即聚醯亞胺前驅體進行加熱處理而使醯亞胺化進行從而轉化為聚醯亞胺的加熱溫度,較佳為80℃~300℃,更佳為100℃~300℃,進而較佳為200℃~300℃。若小於80℃,則有醯亞胺化未充分進行,而耐熱性降低的擔憂,若在高於300℃的溫度下進行,則有對半導體元件造成損傷的擔憂。 The heating temperature at which the polyarsenazo precursor of the component (a) of the present invention is heat-treated to convert the oxime to a polyimine is preferably 80 to 300 ° C, more preferably 100. °C ~ 300 ° C, and further preferably 200 ° C ~ 300 ° C. When the temperature is less than 80 ° C, the ruthenium imidization may not sufficiently proceed, and the heat resistance may be lowered. If the temperature is higher than 300 ° C, the semiconductor element may be damaged.

關於將式(1)所表示的聚醯亞胺前驅體塗佈至基材上並進行加熱硬化而獲得的硬化膜的殘留應力,於硬化膜的膜厚為10μm的情況下,較佳為30MPa以下,更佳為27MPa以下,進而較佳為25MPa以下。若殘留應力為30MPa以下,則於以硬化後的膜厚成為10μm的方式形成膜的情況下,可更充分地抑制晶圓的翹曲,可進一步抑制搬送或吸附固定晶圓時產生的不良情況。 The residual stress of the cured film obtained by applying the polyimine precursor represented by the formula (1) to a substrate and heat-curing the film is preferably 30 MPa when the film thickness of the cured film is 10 μm. Hereinafter, it is more preferably 27 MPa or less, further preferably 25 MPa or less. When the residual stress is 30 MPa or less, when the film is formed so that the film thickness after hardening becomes 10 μm, the warpage of the wafer can be more sufficiently suppressed, and the occurrence of the problem of transporting or adsorbing the fixed wafer can be further suppressed. .

此外,殘留應力可藉由如下方法測定,即,使用薄膜應力測定裝置FLX-2320(科天(KLA Tencor)公司製造)測定晶圓的翹曲量後換算成應力。 In addition, the residual stress can be measured by measuring the amount of warpage of the wafer using a film stress measuring device FLX-2320 (manufactured by KLA Tencor Co., Ltd.) and converting the stress into a stress.

為了以硬化後的膜厚成為10μm的方式形成本發明中獲得的硬化膜,在將上述樹脂組成物塗佈至基板上並進行乾燥而形成塗膜的步驟後,塗膜厚度必須為20μm左右。因此,於與藉由照射活性光線而產生自由基的化合物組合而製成感光性樹脂組成物的情況下,樹脂組成物的i射線透射率越高越好。 The cured film obtained in the present invention is formed so that the film thickness after hardening becomes 10 μm, and after the step of applying the resin composition onto a substrate and drying to form a coating film, the thickness of the coating film must be about 20 μm. Therefore, when a photosensitive resin composition is produced by combining with a compound which generates radicals by irradiation with active light, the higher the i-ray transmittance of the resin composition, the better.

具體而言,於膜厚20μm時,i射線透射率較佳為5%以上,更佳為8%以上,進而較佳為15%以上。若小於5%,則i射線未到達至深部,未充分產生自由基,因此有顯影時樹脂自膜的基板側滲出等感光特性降低的擔憂。 Specifically, when the film thickness is 20 μm, the i-ray transmittance is preferably 5% or more, more preferably 8% or more, still more preferably 15% or more. When the amount is less than 5%, the i-ray does not reach the deep portion, and radicals are not sufficiently generated. Therefore, there is a concern that the photosensitive property such as bleeding of the resin from the substrate side of the film during development may be lowered.

此外,i射線透射率可使用U-3310spctrophotometer(日立(HITACHI)公司製造),根據透射紫外線(ultraviolet,UV)光譜(spectrum)進行測定。 Further, the i-ray transmittance can be measured by a transmission ultraviolet (ultraviolet) spectrum using a U-3310spctrophotometer (manufactured by Hitachi, Ltd.).

(b)成分:具有乙烯性不飽和基及異三聚氰酸環結構的光聚合性化合物 (b) Component: Photopolymerizable compound having an ethylenically unsaturated group and an iso-cyanuric acid ring structure

本發明的樹脂組成物包含具有乙烯性不飽和基及異三聚氰酸 環結構的光聚合性化合物作為(b)成分。認為上述光聚合性化合物作為交聯劑而發揮功能,且於硬化後亦殘留於膜中,藉此於聚醯亞胺硬化膜中形成交聯結構,而可抑制膨潤。另外,光聚合性化合物具有提高聚醯亞胺硬化膜的配向性的功能,亦可提高硬化後的殘膜率。 The resin composition of the present invention comprises an ethylenically unsaturated group and isomeric cyanuric acid The photopolymerizable compound having a ring structure is referred to as component (b). It is considered that the photopolymerizable compound functions as a crosslinking agent and remains in the film after curing, whereby a crosslinked structure is formed in the polyimide polyimide cured film, and swelling can be suppressed. Further, the photopolymerizable compound has a function of improving the alignment property of the polyimide film of the polyimide, and can also increase the residual film ratio after curing.

此外,作為抑制聚醯亞胺硬化膜的膨潤的添加劑,有鋁螯合化合物,但於例如300℃以下的低溫硬化時,添加鋁螯合化合物無法獲得充分的效果。藉由使用上述(b)成分,即便為300℃以下的低溫硬化,亦可獲得充分的膨潤抑制效果。 In addition, an aluminum chelate compound is used as an additive for suppressing swelling of the polyimide film. However, when the aluminum chelate compound is cured at a low temperature of, for example, 300 ° C or lower, a sufficient effect cannot be obtained by adding an aluminum chelate compound. By using the component (b) described above, a sufficient swelling suppressing effect can be obtained even at a low temperature of 300 ° C or lower.

作為上述光聚合性化合物,較佳為異氰脲酸三烯丙酯、異氰脲酸三烯丙酯預聚物、及具有下述式(4)所表示的結構的化合物。 The photopolymerizable compound is preferably a triallyl isocyanurate, a triallyl isocyanurate prepolymer, and a compound having a structure represented by the following formula (4).

(式(4)中,R24為氫原子或甲基,X為伸烷基,n為1~25的整數) (In the formula (4), R 24 is a hydrogen atom or a methyl group, X is an alkylene group, and n is an integer of 1 to 25)

具有式(4)所表示的結構的化合物較佳為下述式(5)所表示的化合物。 The compound having a structure represented by the formula (4) is preferably a compound represented by the following formula (5).

(式(5)中,R21~R23分別獨立為一價有機基,至少一者為上述式(4)所表示的基) (In the formula (5), R 21 to R 23 are each independently a monovalent organic group, and at least one of them is a group represented by the above formula (4))

作為具有式(4)所表示的結構的化合物,亦可使用下述式(6)所表示的化合物。 As the compound having a structure represented by the formula (4), a compound represented by the following formula (6) can also be used.

(式(6)中,R21~R23分別獨立為一價有機基,至少一者為下述式(9)所表示的基) (In the formula (6), R 21 to R 23 are each independently a monovalent organic group, and at least one of them is a group represented by the following formula (9))

(式(9)中,R24為氫原子或甲基,X為伸烷基,Y為伸烷基,n為1~25的整數,m為1~14的整數) (In the formula (9), R 24 is a hydrogen atom or a methyl group, X is an alkylene group, Y is an alkylene group, n is an integer of 1 to 25, and m is an integer of 1 to 14)

作為式(5)及式(6)的一價有機基,可列舉碳數1~15的烷基、縮水甘油基、乙烯基等。碳數1~15的烷基亦可如例如2,3-二溴丙基般具有鹵素原子。 Examples of the monovalent organic group of the formula (5) and the formula (6) include an alkyl group having 1 to 15 carbon atoms, a glycidyl group, and a vinyl group. The alkyl group having 1 to 15 carbon atoms may have a halogen atom as the 2,3-dibromopropyl group.

作為式(4)及式(9)的X及Y的伸烷基的碳數,並無特別限制,較佳為碳數2~7的伸烷基,更佳為碳數2~4的伸烷基,進而較佳為伸乙基或伸丙基。 The carbon number of the alkyl group of X and Y of the formulae (4) and (9) is not particularly limited, and is preferably an alkylene group having 2 to 7 carbon atoms, more preferably a carbon number of 2 to 4. The alkyl group is further preferably an ethyl group or a propyl group.

式(4)及式(9)的n為1~25的整數,較佳為1~20的整數,更佳為1~15的整數。 n in the formula (4) and the formula (9) is an integer of 1 to 25, preferably an integer of 1 to 20, and more preferably an integer of 1 to 15.

式(9)中的m為1~14的整數,較佳為1~6的整數,更佳為整數6。 m in the formula (9) is an integer of 1 to 14, preferably an integer of 1 to 6, more preferably an integer of 6.

作為(b)成分即光聚合性化合物的具體例,可列舉下述式(10)所表示的化合物,上述化合物可在商業上以A-9300(新中村化學工業股份有限公司製造)取得。 Specific examples of the photopolymerizable compound as the component (b) include a compound represented by the following formula (10), which is commercially available as A-9300 (manufactured by Shin-Nakamura Chemical Co., Ltd.).

就膨潤抑制性及膜物性的觀點而言,本發明的樹脂組成物的(b)成分的含量相對於(a)成分100重量份較佳為1重量份~50質量份,更佳為1重量份~30質量份,進而較佳為5重量份~20質量份。 The content of the component (b) of the resin composition of the present invention is preferably from 1 part by weight to 50 parts by mass, more preferably 1 part by weight based on 100 parts by weight of the component (a), from the viewpoint of the swelling inhibiting property and the film property. The amount is preferably 30 parts by mass to 20 parts by mass.

藉由將(b)成分的含量相對於(a)成分100重量份設為1質量份以上,可抑制硬化膜的由有機溶劑引起的膨潤,藉由相對於(a)成分100重量份設為50質量份以下,可抑制硬化膜的伸長率降低。 By setting the content of the component (b) to 1 part by mass or more based on 100 parts by weight of the component (a), swelling of the cured film by the organic solvent can be suppressed, and it is set to 100 parts by weight based on the component (a). When the amount is 50 parts by mass or less, the decrease in the elongation of the cured film can be suppressed.

(c)成分:藉由活性光線而產生自由基的化合物 (c) component: a compound that generates free radicals by active light

本發明的樹脂組成物較佳為含有藉由活性光線而產生自由基的化合物作為(c)成分。 The resin composition of the present invention preferably contains a compound which generates a radical by active light as the component (c).

於(a)成分的聚醯亞胺前驅體的式(1)中的R3及或R4的至少一部分為具有碳-碳不飽和雙鍵的一價有機基的情況下,藉由使樹脂組成物含有(c)成分,可將本發明的樹脂組成物製成感光 性樹脂組成物。 In the case where at least a part of R 3 and or R 4 in the formula (1) of the (a) component of the polyimine precursor is a monovalent organic group having a carbon-carbon unsaturated double bond, by using a resin The composition contains the component (c), and the resin composition of the present invention can be made into a photosensitive resin composition.

作為(c)成分,例如可列舉:下述肟酯化合物、二苯甲酮、N,N'-四甲基-4,4'-二胺基二苯甲酮(米其勒酮)等N,N'-四烷基-4,4'-二胺基二苯甲酮;2-苄基-2-二甲基胺基-1-(4-嗎啉基苯基)-丁酮-1、2-甲基-1-[4-(甲硫基)苯基]-2-嗎啉基-丙酮-1等芳香族酮;與烷基蒽醌等芳香環進行縮環而成的醌類;安息香烷基醚等安息香醚化合物、安息香、烷基安息香等安息香化合物;苯偶醯二甲基縮酮等苯偶醯衍生物。該等可單獨使用一種,亦可組合兩種以上而使用。 Examples of the component (c) include the following oxime ester compounds, benzophenone, and N,N'-tetramethyl-4,4'-diaminobenzophenone (micilenone). , N'-tetraalkyl-4,4'-diaminobenzophenone; 2-benzyl-2-dimethylamino-1-(4-morpholinylphenyl)-butanone-1 An aromatic ketone such as 2-methyl-1-[4-(methylthio)phenyl]-2-morpholinyl-acetone-1; an anthracene which is condensed with an aromatic ring such as an alkyl hydrazine; a benzoin compound such as a benzoin alkyl ether, a benzoin compound such as benzoin or an alkyl benzoin; a benzoin derivative such as benzoin dimethyl ketal. These may be used alone or in combination of two or more.

該等中,肟酯化合物由於感度優異且可賦予良好的圖案,故而較佳。 Among these, the oxime ester compound is preferred because it is excellent in sensitivity and can impart a good pattern.

肟酯化合物較佳為下述式(9)所表示的化合物、下述式(10)所表示的化合物或下述式(11)所表示的化合物。 The oxime ester compound is preferably a compound represented by the following formula (9), a compound represented by the following formula (10) or a compound represented by the following formula (11).

(式(9)中,R及R1分別表示碳數1~12的烷基、碳數4~10的環烷基、苯基或甲苯基,較佳為碳數1~8的烷基、碳數4~6的環烷基、苯基或甲苯基,更佳為碳數1~4的烷基、碳數4~6的環烷基、苯基或甲苯基,進而較佳為甲基、環戊基、苯基或甲苯基;R2表示H、OH、COOH、O(CH2)OH、O(CH2)2OH、COO(CH2)OH 或COO(CH2)2OH,較佳為H、O(CH2)OH、O(CH2)2OH、COO(CH2)OH或COO(CH2)2OH,更佳為H、O(CH2)2OH或COO(CH2)2OH) (In the formula (9), R and R 1 each represent an alkyl group having 1 to 12 carbon atoms, a cycloalkyl group having 4 to 10 carbon atoms, a phenyl group or a tolyl group, and preferably an alkyl group having 1 to 8 carbon atoms; a cycloalkyl group having 4 to 6 carbon atoms, a phenyl group or a tolyl group, more preferably an alkyl group having 1 to 4 carbon atoms, a cycloalkyl group having 4 to 6 carbon atoms, a phenyl group or a tolyl group, and further preferably a methyl group. , cyclopentyl, phenyl or tolyl; R 2 represents H, OH, COOH, O(CH 2 )OH, O(CH 2 ) 2 OH, COO(CH 2 )OH or COO(CH 2 ) 2 OH, Preferred is H, O(CH 2 )OH, O(CH 2 ) 2 OH, COO(CH 2 )OH or COO(CH 2 ) 2 OH, more preferably H, O(CH 2 ) 2 OH or COO ( CH 2 ) 2 OH)

(式(10)中,R3分別表示碳數1~6的烷基,較佳為丙基;R4表示NO2或ArCO(此處,Ar表示經取代或未經取代的芳基),作為Ar,較佳為甲苯基;R5及R6分別表示碳數1~12的烷基、苯基、或甲苯基,較佳為甲基、苯基或甲苯基) (In the formula (10), R 3 represents an alkyl group having 1 to 6 carbon atoms, preferably a propyl group; and R 4 represents NO 2 or ArCO (wherein Ar represents a substituted or unsubstituted aryl group), R is preferably a tolyl group; R 5 and R 6 each represent an alkyl group having 1 to 12 carbon atoms, a phenyl group or a tolyl group, preferably a methyl group, a phenyl group or a tolyl group)

(式(11)中,R7表示碳數1~6的烷基,較佳為乙基;R8為具有縮醛鍵的有機基,較佳為與下述式(11-1)所示的化合物所具有的R8對應的取代基;另外,R8所取代在的苯環亦可更具有取代基;R9及R10分別表示碳數1~12的烷基、苯基或甲苯基,較佳為甲基、苯基或甲苯基,更佳為甲基) (In the formula (11), R 7 represents an alkyl group having 1 to 6 carbon atoms, preferably an ethyl group; and R 8 is an organic group having an acetal bond, preferably represented by the following formula (11-1); a compound having a substituent corresponding to R 8 ; in addition, a benzene ring in which R 8 is substituted may have a more substituent; and R 9 and R 10 each represent an alkyl group having 1 to 12 carbon atoms, a phenyl group or a tolyl group; , preferably methyl, phenyl or tolyl, more preferably methyl)

作為上述式(9)所表示的化合物,例如可列舉下述式(9-1)所表示的化合物及下述式(9-2)所表示的化合物。該等中,下述式(9-1)所表示的化合物可以IRGACURE OXE-01(BASF股份有限公司製造,商品名)取得。 The compound represented by the following formula (9), for example, a compound represented by the following formula (9-1) and a compound represented by the following formula (9-2). In the above, the compound represented by the following formula (9-1) can be obtained by IRGACURE OXE-01 (manufactured by BASF Corporation, trade name).

作為上述式(10)所表示的化合物,例如可列舉下述式(10-1)所表示的化合物。該化合物可以DFI-091(DAITO CHEMIX股份有限公司製造,商品名)取得。 The compound represented by the above formula (10) is, for example, a compound represented by the following formula (10-1). This compound can be obtained by DFI-091 (manufactured by DAITO CHEMIX Co., Ltd., trade name).

作為上述式(11)所表示的化合物,例如可列舉下述式(11-1)所表示的化合物。可以Adeka Optomer N-1919(艾迪科(ADEKA)股份有限公司製造,商品名)取得。 The compound represented by the above formula (11) is, for example, a compound represented by the following formula (11-1). It can be obtained by Adeka Optomer N-1919 (manufactured by ADEKA Co., Ltd., trade name).

作為其他肟酯化合物,較佳為使用下述化合物。 As the other oxime ester compound, the following compounds are preferably used.

另外,作為(c)成分,亦可使用以下化合物。 Further, as the component (c), the following compounds can also be used.

作為含有(c)成分的情況下的含量,相對於(a)成分100質量份,較佳為0.01質量份~30質量份,更佳為0.05質量份~15質量份,進而較佳為0.1質量份~10質量份。若調配量為0.01質量份以上,則曝光部充分交聯,感光特性變得更良好,若為30質量份以下,則有硬化膜的耐熱性進一步提高的傾向。 The content in the case of containing the component (c) is preferably 0.01 parts by mass to 30 parts by mass, more preferably 0.05 parts by mass to 15 parts by mass, even more preferably 0.1% by mass based on 100 parts by mass of the component (a). ~10 parts by mass. When the amount is 0.01 parts by mass or more, the exposed portion is sufficiently crosslinked, and the photosensitive property is further improved. When the amount is 30 parts by mass or less, the heat resistance of the cured film tends to be further improved.

(d)成分:溶劑 (d) Ingredients: Solvent

本發明的樹脂組成物亦可含有溶劑作為(d)成分。 The resin composition of the present invention may further contain a solvent as the component (d).

作為(d)成分即溶劑,較佳為完全溶解聚醯亞胺前驅體的極 性溶劑,可列舉:N-甲基-2-吡咯啶酮、N,N-二甲基乙醯胺、N,N-二甲基甲醯胺、二甲基亞碸、四甲基脲、六甲基磷醯三胺、γ-丁內酯、δ-戊內酯、γ-戊內酯、環己酮、環戊酮、丙二醇單甲醚乙酸酯、碳酸丙二酯、乳酸乙酯、1,3-二甲基-2-咪唑啶酮等。 As the component (d), that is, a solvent, it is preferred to completely dissolve the pole of the polyimide precursor. The solvent may, for example, be N-methyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-dimethylformamide, dimethyl hydrazine, tetramethylurea, Hexamethylphosphonium triamine, γ-butyrolactone, δ-valerolactone, γ-valerolactone, cyclohexanone, cyclopentanone, propylene glycol monomethyl ether acetate, propylene carbonate, ethyl lactate , 1,3-dimethyl-2-imidazolidinone, and the like.

該等溶劑可單獨使用,亦可組合兩種以上而使用。 These solvents may be used singly or in combination of two or more.

本發明的樹脂組成物的(d)成分的含量相對於(a)成分100重量份較佳為50質量份~500質量份,更佳為80質量份~400質量份,進而較佳為100質量份~300質量份。 The content of the component (d) of the resin composition of the present invention is preferably 50 parts by mass to 500 parts by mass, more preferably 80 parts by mass to 400 parts by mass, even more preferably 100% by mass based on 100 parts by weight of the component (a). ~300 parts by mass.

(e)成分:除(b)成分以外的光聚合性化合物 (e) component: photopolymerizable compound other than component (b)

本發明的樹脂組成物亦可含有除(b)成分以外的光聚合性化合物作為(e)成分。作為上述光聚合性化合物,可列舉:二乙二醇二(甲基)丙烯酸酯、三乙二醇二(甲基)丙烯酸酯、四乙二醇二(甲基)丙烯酸酯、三羥甲基丙烷二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯、1,6-己二醇二(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、苯乙烯、二乙烯基苯、4-乙烯基甲苯、4-乙烯基吡啶、N-乙烯基吡咯啶酮、(甲基)丙烯酸2-羥基乙酯、1,3-(甲基)丙烯醯氧基-2-羥基丙烷、亞甲基雙丙烯醯胺、N,N-二甲基丙烯醯胺、N-羥甲基丙烯醯胺等。該等可單獨使用,亦可組合兩種以上而使用。 The resin composition of the present invention may contain a photopolymerizable compound other than the component (b) as the component (e). Examples of the photopolymerizable compound include diethylene glycol di(meth)acrylate, triethylene glycol di(meth)acrylate, tetraethylene glycol di(meth)acrylate, and trimethylol. Propane di(meth)acrylate, trimethylolpropane tri(meth)acrylate, 1,4-butanediol di(meth)acrylate, 1,6-hexanediol di(meth)acrylic acid Ester, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, styrene, divinylbenzene, 4-vinyltoluene, 4-vinylpyridine, N-vinylpyrrolidone, (A) 2-hydroxyethyl acrylate, 1,3-(methyl) propylene oxy-2-hydroxypropane, methylene bis acrylamide, N,N-dimethyl decylamine, N-hydroxyl Acrylamide and the like. These may be used singly or in combination of two or more.

含有光聚合性化合物的情況下的調配量相對於(a)成分100質量份較佳為設為1質量份~100質量份,更佳為設為10質量份~75質量份,進而較佳為設為30質量份~50質量份。若調配量為1質量份以上,則可賦予更良好的感光特性,若為100質量份以下,則可進一步提高硬化膜的耐熱性。 The amount of the photopolymerizable compound is preferably from 1 part by mass to 100 parts by mass, more preferably from 10 parts by mass to 75 parts by mass, even more preferably from 100 parts by mass to 100 parts by mass of the component (a). It is set to 30 parts by mass to 50 parts by mass. When the amount is 1 part by mass or more, more excellent photosensitivity can be imparted, and if it is 100 parts by mass or less, the heat resistance of the cured film can be further improved.

除上述(a)~(e)成分以外,為了確保良好的保存穩定性,本發明的樹脂組成物亦可包含自由基聚合禁止劑或自由基聚合抑制劑。 In addition to the above components (a) to (e), the resin composition of the present invention may contain a radical polymerization inhibiting agent or a radical polymerization inhibitor in order to ensure good storage stability.

具體而言,可列舉:對甲氧基苯酚、二苯基-對苯醌、苯醌、對苯二酚、鄰苯三酚、酚噻嗪、間苯二酚、鄰二硝基苯、對二硝基苯、間二硝基苯、菲醌、N-苯基-2-萘胺、銅鐵靈(cupferron)、2,5-甲基苯醌、丹寧酸、對苄基胺基苯酚、亞硝基胺化合物等。該等可單獨使用,亦可組合兩種以上而使用。 Specific examples thereof include p-methoxyphenol, diphenyl-p-benzoquinone, benzoquinone, hydroquinone, pyrogallol, phenothiazine, resorcinol, o-dinitrobenzene, and Dinitrobenzene, m-dinitrobenzene, phenanthrenequinone, N-phenyl-2-naphthylamine, cupferron, 2,5-methylphenylhydrazine, tannic acid, p-benzylaminophenol , nitrosamine compounds, and the like. These may be used singly or in combination of two or more.

關於樹脂組成物含有自由基聚合禁止劑或自由基聚合抑制劑的情況下的含量,相對於(a)成分100質量份,較佳為0.01質量份~30質量份,更佳為0.01質量份~10質量份,進而較佳為0.05質量份~5質量份。若調配量為0.01質量份以上,則保存穩定性變得更良好,若為30質量份以下,則可進一步提高硬化膜的耐熱性。 The content in the case where the resin composition contains a radical polymerization inhibiting agent or a radical polymerization inhibitor is preferably 0.01 parts by mass to 30 parts by mass, more preferably 0.01 parts by mass, per 100 parts by mass of the component (a). 10 parts by mass, more preferably 0.05 parts by mass to 5 parts by mass. When the amount is 0.01 parts by mass or more, the storage stability is further improved, and when the amount is 30 parts by mass or less, the heat resistance of the cured film can be further improved.

為了進一步提高對硬化後的矽基板等的密接性,本發明的樹脂組成物亦可更包含有機矽烷化合物。 In order to further improve the adhesion to the cured ruthenium substrate or the like, the resin composition of the present invention may further contain an organic decane compound.

作為上述有機矽烷化合物,可列舉:γ-胺基丙基三甲氧基矽烷、γ-胺基丙基三乙氧基矽烷、乙烯基三乙氧基矽烷、乙烯基三甲氧基矽烷、γ-縮水甘油氧基丙基三乙氧基矽烷、γ-縮水甘油氧基丙基三甲氧基矽烷、γ-(甲基)丙烯醯氧基丙基三甲氧基矽烷、3-脲基丙基三乙氧基矽烷、3-巰基丙基三甲氧基矽烷、3-異氰酸酯基丙基三乙氧基矽烷、雙(2-羥基乙基)-3-胺基丙基三乙氧基矽烷、乙基胺基甲酸三乙氧基矽烷基丙酯、3-(三乙氧基矽烷基)丙基琥珀酸酐、苯基三乙氧基矽烷、苯基三甲氧基矽烷、N-苯基-3-胺基丙基三甲 氧基矽烷、3-三乙氧基矽烷基-N-(1,3-二甲基亞丁基)丙基胺、2-(3,4-環氧環己基)乙基三甲氧基矽烷等。 Examples of the above organodecane compound include γ-aminopropyltrimethoxydecane, γ-aminopropyltriethoxydecane, vinyltriethoxydecane, vinyltrimethoxydecane, and γ-shrinkage. Glyceroxypropyltriethoxydecane, γ-glycidoxypropyltrimethoxydecane, γ-(meth)acryloxypropyltrimethoxydecane, 3-ureidopropyltriethoxylate Baseline, 3-mercaptopropyltrimethoxydecane, 3-isocyanatepropyltriethoxydecane, bis(2-hydroxyethyl)-3-aminopropyltriethoxydecane, ethylamino Triethoxy decyl propyl formate, 3-(triethoxydecyl)propyl succinic anhydride, phenyl triethoxy decane, phenyl trimethoxy decane, N-phenyl-3-aminopropyl Base three Oxaloxane, 3-triethoxydecyl-N-(1,3-dimethylbutylidene)propylamine, 2-(3,4-epoxycyclohexyl)ethyltrimethoxydecane, and the like.

有機矽烷化合物的含量只要以獲得所期望的效果的方式適當調整即可。 The content of the organic decane compound may be appropriately adjusted so as to obtain a desired effect.

<硬化膜及圖案硬化膜的製造方法> <Method for Producing Cured Film and Pattern Cured Film>

關於將本發明的組成物塗佈至基材上並進行加熱硬化而獲得的硬化膜的殘留應力,於硬化膜的膜厚為10μm的情況下,較佳為30MPa以下,更佳為27MPa以下,進而較佳為25MPa以下。若殘留應力為30MPa以下,則於以硬化後的膜厚成為10μm的方式形成膜的情況下,可更充分地抑制晶圓的翹曲,可進一步抑制搬送或吸附固定晶圓時產生的不良情況。 The residual stress of the cured film obtained by applying the composition of the present invention to a substrate and heat-hardening is preferably 30 MPa or less, and more preferably 27 MPa or less, when the film thickness of the cured film is 10 μm. More preferably, it is 25 MPa or less. When the residual stress is 30 MPa or less, when the film is formed so that the film thickness after hardening becomes 10 μm, the warpage of the wafer can be more sufficiently suppressed, and the occurrence of the problem of transporting or adsorbing the fixed wafer can be further suppressed. .

此外,殘留應力可藉由如下方法測定,即,使用薄膜應力測定裝置FLX-2320(科天(KLA Tencor)公司製造)測定晶圓的翹曲量後換算成應力。 In addition, the residual stress can be measured by measuring the amount of warpage of the wafer using a film stress measuring device FLX-2320 (manufactured by KLA Tencor Co., Ltd.) and converting the stress into a stress.

本發明的圖案硬化膜是由上述樹脂組成物所形成的圖案硬化膜。本發明的圖案硬化膜是在上述樹脂組成物含有(c)成分時形成。 The pattern cured film of the present invention is a pattern cured film formed of the above resin composition. The pattern cured film of the present invention is formed when the resin composition contains the component (c).

另外,本發明的圖案硬化膜的製造方法包括如下步驟:將上述樹脂組成物塗佈至基板上並加以乾燥而形成塗膜;於對上述塗膜照射活性光線後,進行顯影而獲得圖案樹脂膜;及對上述圖案樹脂膜進行加熱處理。 Further, the method for producing a pattern cured film of the present invention comprises the steps of: applying the resin composition onto a substrate and drying it to form a coating film; and after irradiating the coating film with active light, developing the pattern to obtain a pattern resin film And heat-treating the above-mentioned patterned resin film.

以下,首先對圖案硬化膜的製造方法的各步驟進行說明。 Hereinafter, each step of the method for producing a pattern cured film will be described.

本發明的圖案硬化膜的製造方法包括如下步驟:將上述樹脂 組成物塗佈至基板上並加以乾燥而形成塗膜。作為將樹脂組成物塗佈至基材上的方法,可列舉浸漬法、噴霧法(spray method)、網版印刷法(screen printing method)、旋轉塗佈法(spin coating method)等。作為基材,可列舉矽晶圓(silicon wafer)、金屬基板、陶瓷(ceramic)基板等。本發明的樹脂組成物可形成低應力的硬化膜,因此可適宜地用於12英吋以上的大口徑的矽晶圓。 The method for producing a pattern hardened film of the present invention comprises the steps of: the above resin The composition is applied onto a substrate and dried to form a coating film. Examples of the method of applying the resin composition onto the substrate include a dipping method, a spray method, a screen printing method, a spin coating method, and the like. Examples of the substrate include a silicon wafer, a metal substrate, and a ceramic substrate. Since the resin composition of the present invention can form a low-stress cured film, it can be suitably used for a large-diameter tantalum wafer of 12 inches or more.

藉由在乾燥步驟中加熱去除溶劑,可形成無黏著性的塗膜。乾燥步驟可使用DATAPLATE(數位式加熱板(Digital Hotplate),PMC公司製造)等裝置,作為乾燥溫度,較佳為90℃~130℃,作為乾燥時間,較佳為100秒~400秒。 By removing the solvent by heating in the drying step, a non-adhesive coating film can be formed. The drying step can be carried out using a device such as a DATAPLATE (Digital Hotplate, manufactured by PMC Co., Ltd.) as a drying temperature, preferably 90 ° C to 130 ° C, and as a drying time, preferably 100 seconds to 400 seconds.

本發明的圖案硬化膜的製造方法包括如下步驟:於對上述步驟中所形成的塗膜照射活性光線後,進行顯影而獲得圖案樹脂膜。藉此,可獲得形成有所期望的圖案的樹脂膜。本發明的樹脂組成物適宜用於i射線曝光,但作為所照射的活性光線,可使用紫外線、遠紫外線、可見光線、電子束、X射線等。 The method for producing a pattern cured film of the present invention comprises the steps of: subjecting the coating film formed in the above step to active light rays, and then developing to obtain a pattern resin film. Thereby, a resin film which forms a desired pattern can be obtained. The resin composition of the present invention is suitably used for i-ray exposure, but as the active light to be irradiated, ultraviolet rays, far ultraviolet rays, visible rays, electron beams, X-rays or the like can be used.

作為顯影液,並無特別限制,可使用:1,1,1-三氯乙烷等阻燃性溶劑、碳酸鈉水溶液、氫氧化四甲基銨水溶液等鹼性水溶液,N,N-二甲基甲醯胺、二甲基亞碸、N,N-二甲基乙醯胺、N-甲基-2-吡咯啶酮、環戊酮、γ-丁內酯、乙酸酯類等良溶劑,該等良溶劑與低級醇、水、芳香族烴等不良溶劑的混合溶劑等。於顯影後,視需要利用不良溶劑等進行沖洗(rinse)洗淨。 The developer is not particularly limited, and an alkaline aqueous solution such as a flame retardant solvent such as 1,1,1-trichloroethane, an aqueous solution of sodium carbonate or an aqueous solution of tetramethylammonium hydroxide can be used, N,N-dimethyl Good solvent such as carbamide, dimethyl hydrazine, N,N-dimethylacetamide, N-methyl-2-pyrrolidone, cyclopentanone, γ-butyrolactone, acetate, etc. A mixed solvent of such a good solvent and a poor solvent such as a lower alcohol, water or an aromatic hydrocarbon. After the development, it is washed with a poor solvent or the like as needed.

本發明的圖案硬化膜的製造方法包括對圖案樹脂膜進行加熱處理的步驟。 The method for producing a pattern cured film of the present invention includes a step of heat-treating the pattern resin film.

該加熱處理可使用縱型擴散爐(光洋林德伯格(KOYO LINDBERG)製造)等裝置,較佳為於加熱溫度80℃~300℃下進行,加熱時間較佳為5分鐘~300分鐘。藉由該步驟,可使樹脂組成物中的聚醯亞胺前驅體進行醯亞胺化而獲得含有聚醯亞胺樹脂的圖案硬化膜。 This heat treatment can use a vertical diffusion furnace (Koyo Lindbergh (KOYO) The apparatus of LINDBERG) is preferably carried out at a heating temperature of 80 ° C to 300 ° C, and the heating time is preferably 5 minutes to 300 minutes. By this step, the polyimide precursor in the resin composition can be imidized to obtain a patterned cured film containing a polyimide resin.

另外,本發明的硬化膜是由上述樹脂組成物所形成的硬化膜。即,本發明的硬化膜亦可為未形成圖案的硬化膜。 Further, the cured film of the present invention is a cured film formed of the above resin composition. That is, the cured film of the present invention may be a cured film which is not patterned.

以此方式獲得的本發明的硬化膜或圖案硬化膜可用作半導體裝置的表面保護層、層間絕緣層、再配線層等。 The cured film or patterned cured film of the present invention obtained in this manner can be used as a surface protective layer, an interlayer insulating layer, a rewiring layer, and the like of a semiconductor device.

圖1是本發明的一實施方式的具有再配線結構的半導體裝置的概略剖面圖。 1 is a schematic cross-sectional view showing a semiconductor device having a rewiring structure according to an embodiment of the present invention.

本實施方式的半導體裝置具有多層配線結構。於層間絕緣層(層間絕緣膜)1上形成有A1配線層2,於其上部更形成有絕緣層(絕緣膜)3(例如P-SiN層),更形成有元件的表面保護層(表面保護膜)4。自配線層2的焊墊(pad)部5起形成再配線層6,並延伸至與作為外部連接端子的由焊料、金等形成的導電性球(ball)7的連接部分、即芯(core)8的上部。並且,於表面保護層4上形成有面塗層(cover coat layer)9。再配線層6經由障壁金屬(barrier metal)10而連接於導電性球7,為了保持該導電性球7而設置有軸環(collar)11。於安裝此種結構的封裝體(package)時,為了進一步緩和應力,亦有介隔底膠(underfill)12的情況。 The semiconductor device of the present embodiment has a multilayer wiring structure. An A1 wiring layer 2 is formed on the interlayer insulating layer (interlayer insulating film) 1, and an insulating layer (insulating film) 3 (for example, a P-SiN layer) is further formed on the upper portion thereof, and a surface protective layer of the element is further formed (surface protection) Membrane) 4. The rewiring layer 6 is formed from the pad portion 5 of the wiring layer 2, and extends to a connection portion with a conductive ball (ball) formed of solder, gold or the like as an external connection terminal, that is, a core (core) ) The upper part of 8. Further, a cover coat layer 9 is formed on the surface protective layer 4. The rewiring layer 6 is connected to the conductive ball 7 via a barrier metal 10, and a collar 11 is provided to hold the conductive ball 7. In the case of installing a package of such a structure, in order to further alleviate the stress, there is also a case where an underfill 12 is interposed.

本發明的硬化膜或圖案硬化膜可用於上述實施方式的面塗材、再配線用芯材、焊料等的球用軸環材、底膠材等。 The cured film or the patterned cured film of the present invention can be used for the top coat material, the core material for rewiring, the ball collar material such as solder, and the base rubber of the above-described embodiment.

本發明的電子零件具有使用本發明的硬化膜或圖案硬化膜的面塗層、再配線用芯、焊料等的球用軸環、倒裝晶片(flip chip)等所使用的底膠等,除此以外並無特別限制,可採用各種結構。 The electronic component of the present invention has a surface coating layer using a cured film or a pattern cured film of the present invention, a core for rewiring, a ball collar for solder, and the like, and a flip chip (flip) The primer used in the chip or the like is not particularly limited, and various structures can be employed.

[實施例] [Examples]

以下,藉由實施例具體地說明本發明。 Hereinafter, the present invention will be specifically described by way of examples.

合成例1(均苯四甲酸-甲基丙烯酸羥基乙酯二酯的合成) Synthesis Example 1 (Synthesis of pyromellitic acid-hydroxyethyl methacrylate diester)

於0.5L的聚合物材質瓶中,將於160℃的乾燥機中乾燥24小時的均苯四甲酸二酐43.624g(200mmol)、甲基丙烯酸2-羥基乙酯54.919g(401mmol)、及對苯二酚0.220g溶解於N-甲基吡咯啶酮394g中,以觸媒量添加1,8-二氮雙環十一烯後,於室溫下(25℃)攪拌24小時而進行酯化,藉此獲得均苯四甲酸-甲基丙烯酸羥基乙酯二酯溶液。將該溶液設為均苯四甲酸二酐(pyromellitic dianhydride,PMDA)(甲基丙烯酸羥基乙酯(hydroxyethyl methacrylate,HEMA))溶液。 In a 0.5 L polymer bottle, 43.624 g (200 mmol) of pyromellitic dianhydride and 54.919 g (401 mmol) of 2-hydroxyethyl methacrylate were dried in a dryer at 160 ° C for 24 hours, and 0.220 g of benzenediol was dissolved in 394 g of N-methylpyrrolidone, and after adding 1,8-diazabicycloundecene in a catalytic amount, the mixture was stirred at room temperature (25 ° C) for 24 hours to carry out esterification. Thereby, a solution of pyromellitic acid-hydroxyethyl methacrylate diester was obtained. This solution was made into a solution of pyromellitic dianhydride (PMDA) (hydroxyethyl methacrylate (HEMA)).

合成例2(4,4'-氧雙鄰苯二甲酸二酯的合成) Synthesis Example 2 (Synthesis of 4,4'-oxydiphthalic acid diester)

於0.5L的聚合物材質瓶中,將於160℃的乾燥機中乾燥24小時的4,4'-氧雙鄰苯二甲酸49.634g(160mmol)、甲基丙烯酸2-羥基乙酯44.976g(328mmol)、及對苯二酚0.176g溶解於N-甲基吡咯啶酮378g中,以觸媒量添加1,8-二氮雙環十一烯後,於室溫下(25℃)攪拌48小時而進行酯化,獲得4,4'-氧雙鄰苯二甲酸-甲基丙烯酸羥基乙酯二酯溶液。將該溶液設為4,4'-氧雙鄰苯二甲酸酐(4,4-oxydiphthalic anhydride,ODPA)(HEMA)溶液。 In a 0.5 L polymer bottle, 49.634 g (160 mmol) of 4,4'-oxydiphthalic acid and 44.976 g of 2-hydroxyethyl methacrylate were dried in a dryer at 160 ° C for 24 hours. 328 mmol) and 0.176 g of hydroquinone were dissolved in 378 g of N-methylpyrrolidone, and after adding 1,8-diazabicycloundecene in a catalytic amount, the mixture was stirred at room temperature (25 ° C) for 48 hours. The esterification was carried out to obtain a 4,4'-oxydiphthalic acid-hydroxyethyl methacrylate diester solution. This solution was set as a 4,4'-oxydiphthalic anhydride (ODPA) (HEMA) solution.

合成例3(聚合物1的合成) Synthesis Example 3 (Synthesis of Polymer 1)

於具備攪拌機、溫度計的0.5L的燒瓶(flask)中,投入合 成例1中獲得的均苯四甲酸二酐(HEMA)溶液195.564g及合成例2中獲得的4,4'-氧雙鄰苯二甲酸酐(HEMA)溶液58.652g,其後,於水浴冷卻下,以反應溶液溫度保持為10度以下的方式使用滴液漏斗滴加亞硫醯氯25.9g(217.8mmol)。於亞硫醯氯滴加結束後,於水浴冷卻下進行2小時反應,而獲得均苯四甲酸二酐(HEMA)與4,4'-氧雙鄰苯二甲酸酐(HEMA)的醯氯的溶液。繼而,使用滴液漏斗,於水浴冷卻化,以反應溶液溫度不超過10℃的方式邊注意邊滴加2,2'-雙(三氟甲基)聯苯胺31.696g(99.0mmol)、吡啶34.457g(435.6mmol)、對苯二酚0.076g(0.693mmol)的N-甲基吡咯啶酮90.211g溶液。將該反應液滴加至蒸餾水中,將沈澱物過濾分離而收集,並進行減壓乾燥,藉此獲得聚醯胺酸酯。藉由標準聚苯乙烯換算求出的重量平均分子量為34,000。將其設為聚合物1。使1g聚合物1溶解於N-甲基吡咯啶酮1.5g中,並藉由旋轉塗佈而塗佈至玻璃基板上,於100℃的加熱板(hot plate)上加熱180秒鐘使溶劑揮發而形成厚度20μm的塗膜。此時,所獲得的塗膜的i射線透射率為30%。 In a 0.5 L flask equipped with a stirrer and a thermometer, the mixture was placed in a flask. 195.564 g of a pyromellitic dianhydride (HEMA) solution obtained in Example 1 and 58.652 g of a 4,4'-oxydiphthalic anhydride (HEMA) solution obtained in Synthesis Example 2, followed by cooling in a water bath Next, 25.9 g (217.8 mmol) of sulfite chlorine was added dropwise using a dropping funnel so that the temperature of the reaction solution was kept at 10 degrees or less. After the completion of the dropwise addition of sulfoxide, the reaction was carried out for 2 hours under cooling in a water bath to obtain ruthenium chloride of pyromellitic dianhydride (HEMA) and 4,4'-oxydiphthalic anhydride (HEMA). Solution. Then, using a dropping funnel, it was cooled in a water bath, and while the temperature of the reaction solution did not exceed 10 ° C, 2,2'-bis(trifluoromethyl)benzidine 31.696 g (99.0 mmol) and pyridine 34.457 were added dropwise. A solution of g (435.6 mmol) and hydroquinone 0.076 g (0.693 mmol) of N-methylpyrrolidone 90.211 g. The reaction liquid was added dropwise to distilled water, and the precipitate was collected by filtration and collected, and dried under reduced pressure, whereby a polyphthalate was obtained. The weight average molecular weight determined by standard polystyrene conversion was 34,000. This was designated as Polymer 1. 1 g of the polymer 1 was dissolved in 1.5 g of N-methylpyrrolidone, and applied to a glass substrate by spin coating, and heated on a hot plate at 100 ° C for 180 seconds to evaporate the solvent. A coating film having a thickness of 20 μm was formed. At this time, the obtained coating film had an i-ray transmittance of 30%.

聚合物1的藉由凝膠滲透色譜(Gel Permeation Chromatography,GPC)法標準聚苯乙烯換算而求出的重量平均分子量的測定條件如下,相對於聚合物0.5mg,使用溶劑[四氫呋喃(Tetrahydrofuran,THF)/二甲基甲醯胺(Dimethyl Formamide,DMF)=1/1(容積比)]1mL的溶液進行測定。 The measurement conditions of the weight average molecular weight of the polymer 1 obtained by standard polystyrene conversion by gel permeation chromatography (GPC) method are as follows, and a solvent [tetrahydrofuran (Tetrahydrofuran, THF) is used with respect to 0.5 mg of the polymer. / Dimethyl Formamide (DMF) = 1 / 1 (volume ratio)] 1mL solution was measured.

測定裝置:檢測器日立製作所股份有限公司製造的L4000UV Measuring device: L4000UV manufactured by Hitachi, Ltd.

泵(pump):日立製作所股份有限公司製造的L6000 Pump: L6000 manufactured by Hitachi, Ltd.

島津製作所股份有限公司製造的C-R4A Chromatopac C-R4A Chromatopac manufactured by Shimadzu Corporation

測定條件:管柱(column)Gelpack GL-S300MDT-5×2個 Measurement conditions: column Gelpack GL-S300MDT-5×2

溶析液:THF/DMF=1/1(容積比) Lysate: THF/DMF=1/1 (volume ratio)

LiBr(0.03mol/L)、H3PO4(0.06mol/L) LiBr (0.03mol/L), H3PO4 (0.06mol/L)

流速:1.0mL/min、檢測器:UV270nm Flow rate: 1.0 mL/min, detector: UV 270 nm

聚合物1的i射線透射率是使用U-3310 Spectrophotometer(日立(HITACHI)公司製造)進行測定。 The i-ray transmittance of the polymer 1 was measured using a U-3310 Spectrophotometer (manufactured by Hitachi, Ltd.).

實施例1~實施例6及比較例1~比較例4 Example 1 to Example 6 and Comparative Example 1 to Comparative Example 4

將(a)、(b)、(c)、(e)的各成分以表1所示的調配組成溶解於N-甲基吡咯啶酮中,而製備樹脂組成物,藉由下述方法評價解析度、殘留應力及膨潤率。將結果示於表1。 Each of the components (a), (b), (c), and (e) was dissolved in N-methylpyrrolidone in the formulation shown in Table 1, and a resin composition was prepared and evaluated by the following method. Resolution, residual stress, and swelling ratio. The results are shown in Table 1.

此外,表1中,(b)及(c)成分的各欄中的括號內的數字表示相對於(a)成分100質量份的添加量(質量份)。另外,溶劑使用N-甲基吡咯啶酮,使用量均以相對於(a)成分100質量份為1.5倍(150質量份)而使用。 In addition, in Table 1, the number in the brackets of each of the components (b) and (c) indicates the amount of addition (parts by mass) with respect to 100 parts by mass of the component (a). Further, N-methylpyrrolidone was used as the solvent, and the amount used was 1.5 times (150 parts by mass) based on 100 parts by mass of the component (a).

(感光特性(解析度)的評價) (Evaluation of photosensitive characteristics (resolution))

藉由旋轉塗佈法將所製備的上述樹脂組成物塗佈至6英吋矽晶圓上,於100℃的加熱板上加熱3分鐘,使溶劑揮發,而獲得膜厚10μm的塗膜。將該塗膜浸漬於γ-丁內酯:乙酸丁酯=7:3的混合溶劑中至完全溶解為止,將該時間的2倍設定為顯影時間。針對藉由相同方法所獲得的塗膜,經由光罩(photomask)使用i射線步進機(stepper)FPA-3000iW(佳能(CANON)股份有限公司製造)以i射線換算為300mJ/cm2進行曝光,將晶圓浸漬於γ-丁內酯:乙酸丁酯=7:3中進行浸置式顯影(puddle developing)後, 利用環戊酮進行沖洗洗淨。將解析出的線與間隙圖案(line and space pattern)的遮罩尺寸的最小值作為解析度進行評價。 The prepared resin composition was applied onto a 6-inch wafer by a spin coating method, and heated on a hot plate at 100 ° C for 3 minutes to volatilize the solvent to obtain a coating film having a film thickness of 10 μm. This coating film was immersed in a mixed solvent of γ-butyrolactone: butyl acetate = 7:3 until completely dissolved, and twice the time was set as the development time. The coating film obtained by the same method was exposed to an i-ray conversion of 300 mJ/cm 2 using an i-ray stepper FPA-3000iW (manufactured by Canon Inc.) via a photomask. The wafer was immersed in γ-butyrolactone: butyl acetate = 7:3 for puddle development, and then rinsed with cyclopentanone. The minimum value of the mask size of the analyzed line and space pattern was evaluated as the resolution.

(殘留應力的測定) (Measurement of residual stress)

藉由旋轉塗佈法將所獲得的樹脂組成物塗佈至6英吋矽晶圓上,於100℃的加熱板上加熱3分鐘,使溶劑揮發,而獲得硬化後膜厚成為10μm的塗膜。使用縱型擴散爐(光洋林德伯格(KOYO LINDBERG)製造)將該塗膜於氮氣環境下於270℃下進行4小時加熱硬化,而獲得聚醯亞胺膜。硬化後的聚醯亞胺膜的殘留應力是使用薄膜應力測定裝置FLX-2320(科天(KLA Tencor)公司製造)於室溫下進行測定。 The obtained resin composition was applied onto a 6-inch wafer by a spin coating method, and heated on a hot plate at 100 ° C for 3 minutes to volatilize the solvent to obtain a coating film having a film thickness of 10 μm after hardening. . The coating film was heat-hardened at 270 ° C for 4 hours under a nitrogen atmosphere using a vertical diffusion furnace (manufactured by KOYO LINDBERG) to obtain a polyimide film. The residual stress of the hardened polyimide film was measured at room temperature using a film stress measuring device FLX-2320 (manufactured by KLA Tencor Co., Ltd.).

(膨潤率的測定) (Measurement of swelling rate)

藉由旋轉塗佈法將所獲得的樹脂組成物塗佈至6英吋矽晶圓上,於100℃的加熱板上加熱3分鐘,使溶劑揮發,而獲得硬化後膜厚成為10μm的塗膜。使用縱型擴散爐(光洋林德伯格(KOYO LINDBERG)製造)將該塗膜於氮氣環境下於270℃下進行4小時加熱硬化,而獲得聚醯亞胺膜。將於基板上製作的聚醯亞胺膜浸漬於70℃的N-甲基吡咯啶酮中並進行20分鐘加熱。於利用蒸餾水對在N-甲基吡咯啶酮中浸漬過的樣品(樣品)進行沖洗後,測定膜厚。根據N-甲基吡咯啶酮浸漬前後的膜厚變化算出膨潤率(%)。 The obtained resin composition was applied onto a 6-inch wafer by a spin coating method, and heated on a hot plate at 100 ° C for 3 minutes to volatilize the solvent to obtain a coating film having a film thickness of 10 μm after hardening. . The coating film was heat-hardened at 270 ° C for 4 hours under a nitrogen atmosphere using a vertical diffusion furnace (manufactured by KOYO LINDBERG) to obtain a polyimide film. The polyimide film prepared on the substrate was immersed in N-methylpyrrolidone at 70 ° C and heated for 20 minutes. The sample (sample) immersed in N-methylpyrrolidone was washed with distilled water, and the film thickness was measured. The swelling ratio (%) was calculated from the change in film thickness before and after the N-methylpyrrolidone immersion.

表1中,(b)成分如下。 In Table 1, the component (b) is as follows.

A9300(乙氧基化異三聚氰酸三丙烯酸酯,新中村化學股份有限公司製造,商品名) A9300 (Ethoxylated isocyanuric acid triacrylate, manufactured by Shin-Nakamura Chemical Co., Ltd., trade name)

表1中,(c)成分為下述化合物。 In Table 1, the component (c) is the following compound.

C1:1,2-辛二酮,1-[4-(苯硫基)苯基-,2-(O-苯甲醯基肟)](BASF股份有限公司製造,商品名「IRGACURE OXE-01」) C1:1,2-octanedione, 1-[4-(phenylthio)phenyl-, 2-(O-benzylidene fluorenyl)] (manufactured by BASF Corporation, trade name "IRGACURE OXE-01" ")

C2:Adeka Arkls NCI-930(艾迪科(ADEKA)股份有限公司製造,商品名) C2: Adeka Arkls NCI-930 (made by ADEKA Co., Ltd., trade name)

表1中,(e)成分為四乙二醇二甲基丙烯酸酯。 In Table 1, the component (e) is tetraethylene glycol dimethacrylate.

另外,鋁螯合A(w)為三(乙醯丙酮)鋁(川研精化(KAWAKEN FINE CHEMICAL)公司製造)。 Further, the aluminum chelate A(w) is tris(acetonitrile)aluminum (manufactured by KAWAKEN FINE CHEMICAL).

於實施例中,藉由於含有氟的剛性聚醯亞胺中添加具有異三聚氰酸骨架的化合物,而於保持30MPa以下的低應力的狀態下,膨潤率成為10%以下。另一方面,於比較例中,於組成物不含具有異三聚氰酸骨架的化合物的情況下,含有氟的聚醯亞胺成為20%以上的大的膨潤率。另外,於比較例3及比較例4中,雖然添加了鋁螯合化合物,但硬化溫度低,因此未獲得化學藥液耐性改善效果。 In the examples, the compound having an isomeric cyanuric acid skeleton is added to the rigid polyimide containing fluorine, and the swelling ratio is 10% or less in a state of maintaining a low stress of 30 MPa or less. On the other hand, in the comparative example, when the composition does not contain the compound having a hetero-cyanuric acid skeleton, the fluorine-containing polyimide has a large swelling ratio of 20% or more. Further, in Comparative Example 3 and Comparative Example 4, although the aluminum chelate compound was added, the curing temperature was low, and thus the chemical solution resistance improving effect was not obtained.

[產業上的可利用性] [Industrial availability]

本發明的樹脂組成物可用於形成半導體裝置等的電子 零件的面塗材、再配線用芯材、焊料等的球用軸環材、底膠材等所謂封裝用途。 The resin composition of the present invention can be used to form an electron of a semiconductor device or the like So-called packaging applications such as a face coating material for a part, a core material for rewiring, a ball collar material such as solder, and a primer.

上文詳細說明了本發明的數個實施方式及/或實施例,但業者容易在實質上不脫離本發明的新穎啟示及效果的情況下,對該等作為例示的實施方式及/或實施例施加多種變更。因此,該等多種變更包含於本發明的範圍內。 The embodiments and/or the embodiments of the present invention are described in detail above, but the embodiments and/or embodiments of the present invention are susceptible to the embodiments and/or embodiments of the present invention without departing from the novel teachings and effects of the present invention. Apply a variety of changes. Accordingly, such various modifications are intended to be included within the scope of the present invention.

將該說明書所記載的文獻及成為本申請案的巴黎公約(Paris Convention)優先權的基礎的日本申請案說明書的全部內容引用至本文中。 The entire contents of the documents described in the specification and the Japanese Patent Application, which is the priority of the Paris Convention of the present application, are incorporated herein by reference.

Claims (15)

一種樹脂組成物,其包含下述(a)成分及(b)成分:(a)具有下述式(1)所表示的結構單元的聚醯亞胺前驅體, (式中,R1為四價有機基,R2為二價有機基;R3及R4分別獨立為氫原子、碳數1~20的烷基、碳數3~20的環烷基、或具有碳-碳不飽和雙鍵的一價有機基);(b)具有乙烯性不飽和基及異三聚氰酸環結構的光聚合性化合物。 A resin composition comprising the following component (a) and component (b): (a) a polyimide intermediate having a structural unit represented by the following formula (1), (wherein R 1 is a tetravalent organic group, and R 2 is a divalent organic group; and R 3 and R 4 each independently represent a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, a cycloalkyl group having 3 to 20 carbon atoms, Or a monovalent organic group having a carbon-carbon unsaturated double bond; (b) a photopolymerizable compound having an ethylenically unsaturated group and an iso-cyanuric acid ring structure. 如申請專利範圍第1項所述的樹脂組成物,其中上述式(1)的R2為下述式(2)所表示的二價有機基, (式中,R5~R12分別獨立為氫原子、氟原子、或一價有機基,R5~R12的至少一者為氟原子、甲基或三氟甲基)。 The resin composition of the above formula (1), wherein R 2 of the above formula (1) is a divalent organic group represented by the following formula (2), (wherein R 5 to R 12 each independently represent a hydrogen atom, a fluorine atom or a monovalent organic group, and at least one of R 5 to R 12 is a fluorine atom, a methyl group or a trifluoromethyl group). 如申請專利範圍第1項或第2項所述的樹脂組成物,其中上述式(1)的R2為下述式(3)所表示的二價有機基, (式中,R13及R14分別獨立為氟原子或三氟甲基)。 The resin composition according to the above formula (1), wherein R 2 of the above formula (1) is a divalent organic group represented by the following formula (3), (wherein R 13 and R 14 are each independently a fluorine atom or a trifluoromethyl group). 如申請專利範圍第1項或第2項所述的樹脂組成物,其中 上述光聚合性化合物包含下述式(4)所表示的結構, (式中,R24為氫原子或甲基,X為伸烷基,n為1~25的整數)。 The resin composition according to the first or second aspect of the invention, wherein the photopolymerizable compound comprises a structure represented by the following formula (4), (wherein R 24 is a hydrogen atom or a methyl group, X is an alkylene group, and n is an integer of 1 to 25). 如申請專利範圍第4項所述的樹脂組成物,其中上述光聚合性化合物為下述式(5)所表示的化合物, (式中,R21~R23分別獨立為一價有機基,至少一者為上述式(4)所表示的基)。 The resin composition according to claim 4, wherein the photopolymerizable compound is a compound represented by the following formula (5). (wherein R 21 to R 23 are each independently a monovalent organic group, and at least one is a group represented by the above formula (4)). 如申請專利範圍第1項或第2項所述的樹脂組成物,其中上述(b)成分相對於上述(a)成分100質量份而含有0.01質量份~50質量份。 The resin composition according to the first or second aspect of the invention, wherein the component (b) is contained in an amount of from 0.01 part by mass to 50 parts by mass per 100 parts by mass of the component (a). 如申請專利範圍第1項或第2項所述的樹脂組成物,其更包含藉由照射活性光線而產生自由基的化合物作為(c)成分。 The resin composition according to claim 1 or 2, further comprising a compound which generates a radical by irradiation with active light as the component (c). 如申請專利範圍第7項所述的樹脂組成物,其中上述藉由照射活性光線而產生自由基的化合物為肟酯化合物。 The resin composition according to claim 7, wherein the compound which generates a radical by irradiation with active light is an oxime ester compound. 如申請專利範圍第1項或第2項所述的樹脂組成物,其更包含除(b)成分以外的光聚合性化合物作為(e)成分。 The resin composition according to claim 1 or 2, further comprising a photopolymerizable compound other than the component (b) as the component (e). 如申請專利範圍第9項所述的樹脂組成物,其中上述光 聚合性化合物為(甲基)丙烯酸系化合物。 The resin composition according to claim 9, wherein the light is the light The polymerizable compound is a (meth)acrylic compound. 一種硬化膜的製造方法,其包括如下步驟:將如申請專利範圍第1項至第10項中任一項所述的樹脂組成物塗佈至基板上並加以乾燥而形成塗膜;及對上述塗膜進行加熱處理。 A method for producing a cured film, comprising the steps of: applying a resin composition according to any one of claims 1 to 10 to a substrate and drying to form a coating film; The coating film is heat treated. 一種圖案硬化膜的製造方法,其包括如下步驟:將如申請專利範圍第1項至第10項中任一項所述的樹脂組成物塗佈至基板上並加以乾燥而形成塗膜;於對上述塗膜照射活性光線後,進行顯影而獲得圖案樹脂膜;及對上述圖案樹脂膜進行加熱處理。 A method for producing a patterned cured film, comprising the steps of: applying a resin composition according to any one of claims 1 to 10 to a substrate and drying to form a coating film; After the coating film is irradiated with the active light, development is performed to obtain a pattern resin film; and the pattern resin film is subjected to heat treatment. 一種硬化膜,其是藉由如申請專利範圍第11項所述的硬化膜的製造方法而獲得。 A cured film obtained by the method for producing a cured film according to claim 11 of the patent application. 一種圖案硬化膜,其是藉由如申請專利範圍第12項所述的圖案硬化膜的製造方法而獲得。 A pattern hardening film obtained by the method for producing a pattern cured film according to claim 12 of the patent application. 一種電子零件,其具有如申請專利範圍第13項所述的硬化膜或如申請專利範圍第14項所述的圖案硬化膜。 An electronic component having a cured film as described in claim 13 or a patterned cured film according to claim 14 of the patent application.
TW104103820A 2014-02-10 2015-02-05 Resin composition, cured film and manufacturing method thereof, patterned cured film and manufacturing method thereof, and electronic part TW201533157A (en)

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