TW201530707A - Package substrate as well as manufacturing method thereof and semiconductor package as well as manufacturing method thereof - Google Patents

Package substrate as well as manufacturing method thereof and semiconductor package as well as manufacturing method thereof Download PDF

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Publication number
TW201530707A
TW201530707A TW103103468A TW103103468A TW201530707A TW 201530707 A TW201530707 A TW 201530707A TW 103103468 A TW103103468 A TW 103103468A TW 103103468 A TW103103468 A TW 103103468A TW 201530707 A TW201530707 A TW 201530707A
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Taiwan
Prior art keywords
positioning structure
package substrate
conductive element
package
semiconductor package
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TW103103468A
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Chinese (zh)
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TWI563606B (en
Inventor
江政嘉
王愉博
王隆源
施嘉凱
徐逐崎
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矽品精密工業股份有限公司
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Priority to TW103103468A priority Critical patent/TWI563606B/en
Priority to CN201410051570.3A priority patent/CN104810339B/en
Publication of TW201530707A publication Critical patent/TW201530707A/en
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Publication of TWI563606B publication Critical patent/TWI563606B/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

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  • Wire Bonding (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

This invention provides a package substrate, comprising: a layer-like main body; a plurality of conductive elements formed on the layer-like main body surface; and a positioning structure formed corresponding to each conductive element, so that an issue of the upper and lower packaged components positioning engaging with each other can be improved by the positioning structure, and the manufacturing yield and product quality can be enhanced. This invention further provides a manufacturing method of the package substrate, a semiconductor package and a manufacturing method thereof.

Description

封裝基板及其製法暨半導體封裝件及其製法 Package substrate, preparation method thereof and semiconductor package and preparation method thereof

本發明係有關一種封裝基板及半導體封裝件,尤指一種提高良率之封裝基板、半導體封裝件及其製法。 The present invention relates to a package substrate and a semiconductor package, and more particularly to a package substrate, a semiconductor package, and a method for fabricating the same.

隨著半導體封裝技術的演進,半導體封裝件已開發出不同的封裝型態,且各種電子產品在尺寸上是日益要求輕、薄及小,因此可節省基板平面面積並可同時兼顧處理性能之內嵌式封裝件(embedded package)愈來愈受到重視。 With the evolution of semiconductor packaging technology, semiconductor packages have been developed in different package types, and various electronic products are increasingly required to be light, thin, and small in size, thereby saving substrate planar area and simultaneously taking into consideration processing performance. Embedded packages are gaining more and more attention.

第1A至1C圖係顯示習知之內嵌式封裝件之製法。如第1A圖所示,於一下層基板1上接置晶片12,且該晶片12周圍之下層基板1表面上形成有複數如金屬柱19之導電元件。 Figures 1A through 1C show the fabrication of a conventional in-line package. As shown in FIG. 1A, the wafer 12 is attached to the lower substrate 1, and a plurality of conductive members such as metal posts 19 are formed on the surface of the lower substrate 1 around the wafer 12.

如第1B圖所示,於該下層基板1上接置一上層基板1’,其係藉由複數金屬柱19’及形成其上之銲料18進行對位接合。 As shown in Fig. 1B, an upper substrate 1' is attached to the lower substrate 1, which is joined by a plurality of metal posts 19' and solder 18 formed thereon.

最後,如第1C圖所示,形成封裝膠體17於該下層基板1與上層基板1’之間,以包覆該晶片12及該些金屬柱 19,19’及銲料18。並可於該下層基板1下表面形成複數銲球16。 Finally, as shown in FIG. 1C, an encapsulant 17 is formed between the underlying substrate 1 and the upper substrate 1' to cover the wafer 12 and the metal pillars. 19, 19' and solder 18. A plurality of solder balls 16 may be formed on the lower surface of the lower substrate 1.

惟,習知半導體封裝件之製法中,因該些金屬柱19之端面皆為平面,以致於對位不易,然而,即便於正確對位後,在進行金屬柱表面固接時,也容易發生滑動偏移之問題,最後使製造良率低下。 However, in the manufacturing method of the conventional semiconductor package, since the end faces of the metal pillars 19 are all flat, the alignment is not easy, however, even after the correct alignment, it is easy to occur when the surface of the metal pillar is fixed. The problem of sliding offset finally makes the manufacturing yield low.

因此,如何克服上述習知技術的種種問題,實已成目前亟欲解決的課題。 Therefore, how to overcome the various problems of the above-mentioned prior art has become a problem that is currently being solved.

鑑於上述習知技術之種種缺失,本發明係提供一種封裝基板,係包括:層狀本體;形成於該層狀本體表面上之複數導電元件;以及定位結構,各係形成於對應之該導電元件上。 In view of the above-mentioned various deficiencies of the prior art, the present invention provides a package substrate comprising: a layered body; a plurality of conductive elements formed on a surface of the layered body; and a positioning structure, each system being formed on the corresponding conductive element on.

本發明復提供一種封裝基板之製法,係包括:於一層狀本體上形成具有複數開口之光阻層;於該開口中形成導電元件,並於該導電元件之終端製作定位結構;以及移除該光阻層。 The invention provides a method for manufacturing a package substrate, comprising: forming a photoresist layer having a plurality of openings on a layered body; forming a conductive component in the opening, and forming a positioning structure at a terminal of the conductive component; and removing The photoresist layer.

於製法之一具體實施例中,係於該開口中電鍍形成導電元件並同時形成定位結構,且該定位結構係為凹穴或凸出部。 In one embodiment of the fabrication method, a conductive element is formed by electroplating in the opening and a positioning structure is formed at the same time, and the positioning structure is a recess or a protrusion.

於一具體實施例中,該凹穴係V形凹穴或U形凹穴。 In one embodiment, the pocket is a V-shaped pocket or a U-shaped pocket.

於一具體實施例中,當同時形成導電元件及定位結構時,該導電元件與定位結構係為一體成形。例如,該導電元件與定位結構係為金屬。 In a specific embodiment, when the conductive element and the positioning structure are simultaneously formed, the conductive element and the positioning structure are integrally formed. For example, the conductive element and the positioning structure are metal.

於又一具體實施例中,該定位結構之製作係包括:整平該導電元件與光阻層之高度;於該導電元件與光阻層上形成絕緣層;以及圖案化該導電元件上之絕緣層,並移除該光阻層上的絕緣層,以於各該導電元件上形成至少一塊體,以作為該定位結構。在此實施例中,該塊體係一環形中空塊體,以外露出該導電元件之終端表面。 In another embodiment, the positioning structure comprises: leveling the height of the conductive element and the photoresist layer; forming an insulating layer on the conductive element and the photoresist layer; and patterning the insulation on the conductive element And removing an insulating layer on the photoresist layer to form at least one body on each of the conductive elements as the positioning structure. In this embodiment, the block system is an annular hollow block that exposes the terminal surface of the conductive element.

本發明另提供一種半導體封裝件,係包括:本發明之封裝基板;電子元件,係具有複數形成於該電子元件上之金屬柱及形成於該金屬柱上之銲料,且該電子元件係藉由該銲料接置於該定位結構;以及封裝膠體,係形成於該封裝基板與電子元件之間,以包覆該導電元件、金屬柱及銲料。 The present invention further provides a semiconductor package comprising: the package substrate of the present invention; the electronic component having a plurality of metal pillars formed on the electronic component and solder formed on the metal pillar, wherein the electronic component is The solder is placed on the positioning structure; and an encapsulant is formed between the package substrate and the electronic component to encapsulate the conductive component, the metal pillar and the solder.

前述之半導體封裝件中,復可包括半導體元件,係設置並電性連接於該封裝基板上或該電子元件上。 In the foregoing semiconductor package, the semiconductor device is provided and electrically connected to the package substrate or the electronic component.

本發明並提供一種半導體封裝件之製法,係包括:提供一封裝基板,該封裝基板包含:層狀本體;形成於該層狀本體表面上之複數導電元件;對應形成於各該導電元件上之定位結構;於該定位結構上接置電子元件,其中,該電子元件表面係形成有複數金屬柱及形成於該金屬柱上之銲料,且藉由該銲料接置於該定位結構;以及於該封裝基板與電子元件之間形成封裝膠體,以包覆該導電元件、金屬柱及銲料。 The invention further provides a method for manufacturing a semiconductor package, comprising: providing a package substrate, the package substrate comprising: a layered body; a plurality of conductive elements formed on a surface of the layered body; correspondingly formed on each of the conductive elements Positioning structure; the electronic component is mounted on the positioning structure, wherein the surface of the electronic component is formed with a plurality of metal pillars and solder formed on the metal pillar, and the solder is placed on the positioning structure; An encapsulant is formed between the package substrate and the electronic component to encapsulate the conductive component, the metal post, and the solder.

於該半導體封裝件之製法之一具體實施例中,該定位結構係為凹穴或凸出部。舉例而言,該凹穴係V形凹穴或 U形凹穴。 In a specific embodiment of the method of fabricating the semiconductor package, the positioning structure is a recess or a protrusion. For example, the pocket is a V-shaped pocket or U-shaped pocket.

又,該導電元件與定位結構係可為一體成形。 Moreover, the conductive element and the positioning structure can be integrally formed.

此外,該導電元件與定位結構可同為金屬。但於另一具體實施例中,該定位結構係絕緣材。 In addition, the conductive element and the positioning structure can be the same metal. In yet another embodiment, the positioning structure is an insulating material.

於另一具體實施例中,該定位結構係一環形中空塊體,以外露出該導電元件之終端表面。 In another embodiment, the positioning structure is an annular hollow block that exposes the terminal surface of the conductive element.

由上可知,本發明之封裝基板及其製法暨半導體封裝件及其製法,係藉由在導電元件上形成定位結構,使該封裝基板具有自動定位(self alignment)之功能,且該定位結構可於上方金屬柱進行表面固接時,避免滑動偏移之發生,故而改善上下封裝元件彼此定位接合的問題,提高製造良率與產品品質。 As can be seen from the above, the package substrate of the present invention, the method for manufacturing the same, and the method for manufacturing the same, and the method for manufacturing the same by using a positioning structure on the conductive member, the package substrate has a self-alignment function, and the positioning structure can be When the surface of the upper metal post is fixed, the occurrence of sliding offset is avoided, so that the problem of positioning and joining of the upper and lower package components is improved, and the manufacturing yield and product quality are improved.

1‧‧‧下層基板 1‧‧‧Underlying substrate

1’‧‧‧上層基板 1'‧‧‧Upper substrate

12‧‧‧晶片 12‧‧‧ wafer

16‧‧‧銲球 16‧‧‧ solder balls

17‧‧‧封裝膠體 17‧‧‧Package colloid

18‧‧‧銲料 18‧‧‧ solder

19、19’‧‧‧金屬柱 19, 19’‧‧‧ metal columns

20、50‧‧‧層狀本體 20, 50‧‧‧ layered ontology

201‧‧‧導體層 201‧‧‧ conductor layer

202、302、502‧‧‧導電元件 202, 302, 502‧‧‧ conductive elements

202a、302a、303a、502a‧‧‧定位結構 202a, 302a, 303a, 502a‧‧‧ positioning structure

21‧‧‧光阻層 21‧‧‧Photoresist layer

210‧‧‧開口 210‧‧‧ openings

302a’‧‧‧跡線 302a’‧‧‧ Traces

303‧‧‧絕緣層 303‧‧‧Insulation

5‧‧‧封裝基板 5‧‧‧Package substrate

5’‧‧‧電子元件 5'‧‧‧Electronic components

52‧‧‧半導體元件 52‧‧‧Semiconductor components

56‧‧‧銲球 56‧‧‧ solder balls

57‧‧‧封裝膠體 57‧‧‧Package colloid

58‧‧‧銲料 58‧‧‧ solder

59‧‧‧金屬柱 59‧‧‧Metal column

第1A至1C圖係為習知內嵌式封裝件之製法的剖視示意圖;第2A至2C’圖係為本發明之封裝基板之製法的剖視示意圖,其中,第2B’圖係第2B圖之另一實施例,第2C’圖係根據第2B’圖而得之定位結構剖視示意圖;第3A至3E’圖係為本發明之封裝基板之另一製法的剖視示意圖,其中,第3E’圖係為第3E圖之俯視圖;第4A至4B’圖係顯示定位結構之另一實施例之示意圖;以及第5A至5C圖係為本發明之半導體封裝件之製法剖視示意圖。 1A to 1C are schematic cross-sectional views showing a method of fabricating a conventional in-line package; FIGS. 2A to 2C' are schematic cross-sectional views showing a method of manufacturing a package substrate of the present invention, wherein the 2B' is a 2B 2A to 3E' is a cross-sectional view showing another embodiment of the package substrate of the present invention, wherein, FIG. 3A to FIG. 3E are schematic cross-sectional views showing another embodiment of the package substrate of the present invention; 3E' is a plan view of FIG. 3E; FIGS. 4A to 4B' are schematic views showing another embodiment of the positioning structure; and FIGS. 5A to 5C are schematic cross-sectional views showing the semiconductor package of the present invention.

以下藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。 The other embodiments of the present invention will be readily understood by those skilled in the art from this disclosure.

須知,本說明書所附圖式所繪示之結構、比例、大小等,均僅用以配合說明書所揭示之內容,以供熟悉此技藝之人士之瞭解與閱讀,並非用以限定本發明可實施之限定條件,故不具技術上之實質意義,任何結構之修飾、比例關係之改變或大小之調整,在不影響本發明所能產生之功效及所能達成之目的下,均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時,本說明書中所引用之如“上”、及“一”等之用語,亦僅為便於敘述之明瞭,而非用以限定本發明可實施之範圍,其相對關係之改變或調整,在無實質變更技術內容下,當亦視為本發明可實施之範疇。 It is to be understood that the structure, the proportions, the size, and the like of the present invention are intended to be used in conjunction with the disclosure of the specification, and are not intended to limit the invention. The conditions are limited, so it is not technically meaningful. Any modification of the structure, change of the proportional relationship or adjustment of the size should remain in this book without affecting the effects and the objectives that can be achieved by the present invention. The technical content disclosed in the invention can be covered. In the meantime, the terms "upper" and "one" as used in the specification are merely for convenience of description, and are not intended to limit the scope of the invention, and the relative relationship is changed or adjusted. Without substantial changes to the technical content, it is also considered to be within the scope of the invention.

第2A至2C’圖係為本發明之封裝基板之製法的剖視示意圖。 2A to 2C' are schematic cross-sectional views showing a method of manufacturing the package substrate of the present invention.

如第2A圖所示,先提供一層狀本體20,該層狀本體20之實例可包括晶圓、晶片、矽中介板、電路板或其他可用於半導體結構或半導體封裝之層狀本體。該層狀本體20上形成具有複數開口210之光阻層21,該光阻層21可為乾膜,且該開口210中之層狀本體20表面具有導體層201,以供後續電鍍製程形成導電元件。 As shown in FIG. 2A, a layered body 20 is provided first. Examples of the layered body 20 may include wafers, wafers, germanium interposers, circuit boards, or other layered bodies that may be used in semiconductor structures or semiconductor packages. A photoresist layer 21 having a plurality of openings 210 is formed on the layered body 20. The photoresist layer 21 can be a dry film, and the surface of the layered body 20 in the opening 210 has a conductor layer 201 for forming a conductive process in a subsequent electroplating process. element.

如第2B圖所示,於該開口210中電鍍形成導電元件 202,且於此電鍍步驟中,於該導電元件202之終端製作定位結構202a。例如,在本實施例中,由於電鍍液體與光阻層21開口210壁面先產生化學反應,故靠近該光阻層21開口210壁的表面將先形成金屬,故該定位結構202a係為凹穴。 As shown in FIG. 2B, a conductive element is formed by electroplating in the opening 210. 202, and in the electroplating step, the positioning structure 202a is fabricated at the end of the conductive element 202. For example, in this embodiment, since the plating liquid first reacts with the wall surface of the opening 210 of the photoresist layer 21, the surface of the wall of the opening 210 of the photoresist layer 21 will form a metal first, so the positioning structure 202a is a recess. .

此外,於此步驟中,可透過變更電鍍液成分,以形成各種不同於第2B圖所示之U形凹穴,而形成如第2B’圖所示之V之凹穴。 Further, in this step, the plating liquid composition can be changed to form various U-shaped recesses different from those shown in Fig. 2B to form a V-shaped recess as shown in Fig. 2B'.

接著,如第2C及2C’圖所示,移除該光阻層21,即可得到封裝基板。 Next, as shown in Figs. 2C and 2C', the photoresist layer 21 is removed to obtain a package substrate.

根據前述之製法可知,該導電元件與定位結構係可為一體成形,且該導電元件與定位結構皆為金屬。 According to the foregoing manufacturing method, the conductive element and the positioning structure can be integrally formed, and the conductive element and the positioning structure are both metal.

請參閱第3A至3E’圖,係為本發明之封裝基板之另一製法的剖視示意圖。 Please refer to FIGS. 3A to 3E' for a cross-sectional view showing another manufacturing method of the package substrate of the present invention.

如第3A圖所示,係接續第2A圖之步驟,係於該導體層201上電鍍製程形成導電元件302,且此實施例中,該導電元件302之高度係高於該光阻層21之高度。如第3B圖所示,透過研磨的方式,整平該導電元件302與光阻層21之高度,使該導電元件302與光阻層21齊平。 As shown in FIG. 3A, the step of continuing to FIG. 2A is performed on the conductor layer 201 to form a conductive element 302. In this embodiment, the height of the conductive element 302 is higher than that of the photoresist layer 21. height. As shown in FIG. 3B, the height of the conductive member 302 and the photoresist layer 21 is leveled by grinding to make the conductive member 302 flush with the photoresist layer 21.

如第3C圖所示,於該導電元件302與光阻層21上形成絕緣層303。 As shown in FIG. 3C, an insulating layer 303 is formed on the conductive element 302 and the photoresist layer 21.

接著,利用微影蝕刻等圖案化製程,圖案化該導電元件302上之絕緣層303,並移除該光阻層21上的絕緣層303,以於各該導電元件302上形成如第3D圖所示之至少 一塊體,以作為該定位結構303a。 Then, the insulating layer 303 on the conductive element 302 is patterned by a patterning process such as lithography etching, and the insulating layer 303 on the photoresist layer 21 is removed to form a 3D pattern on each of the conductive elements 302. At least shown A block is used as the positioning structure 303a.

如第3E圖所示,最後,移除該光阻層21,即可得到封裝基板。 As shown in FIG. 3E, finally, the photoresist layer 21 is removed to obtain a package substrate.

此外,如第3E’圖所示,該塊體或該定位結構303a係一環形中空塊體,以外露出該導電元件302之終端表面。然而,當該塊體或該定位結構係絕緣材時,其尺寸必須小於該導電元件端面之面積,俾供電性連接電子元件。 Further, as shown in Fig. 3E', the block or the positioning structure 303a is an annular hollow block which exposes the terminal surface of the conductive member 302. However, when the block or the positioning structure is an insulating material, its size must be smaller than the area of the end face of the conductive member, and the electronic component is electrically connected.

當然,該塊體可為其他外型,並使該導電元件302之終端表面外露出塊體。 Of course, the block may have other shapes and expose the block surface to the end surface of the conductive member 302.

請參閱第4A圖,該定位結構亦可為其他外型之塊體,而為凸出部。例如,可圖案化第3B圖所示之該導電元件302,以得到外型為凸出部之定位結構302a。 Referring to FIG. 4A, the positioning structure may also be a block of other shapes, but is a protrusion. For example, the conductive element 302 shown in FIG. 3B can be patterned to obtain a positioning structure 302a having a convex shape.

如第4B圖所示,復可接續第3B圖所示之該導電元件302,於該導電元件302上利用電鍍法或印刷技術,形成如跡線302a’或其他外型之凸出部,以作為定位結構。而是種導電材質之凸出部,可令與凸出部對接之銲料潤濕攀附於其上,而有內聚之效果,俾產生定位之作用。 As shown in FIG. 4B, the conductive element 302 shown in FIG. 3B can be connected to the conductive element 302 to form a protrusion such as a trace 302a' or other shape by electroplating or printing technology. As a positioning structure. Instead, it is a kind of protruding portion of the conductive material, so that the solder that is butted against the protruding portion is wetted and adhered thereto, and has the effect of cohesion, and the positioning of the crucible is generated.

根據前述之製法,本發明之封裝基板,係包括層狀本體20、複數導電元件202,302及複數定位結構202a,302a,303a。 According to the foregoing method, the package substrate of the present invention comprises a layered body 20, a plurality of conductive elements 202, 302 and a plurality of positioning structures 202a, 302a, 303a.

該複數導電元件202,302係形成於該層狀本體20表面上。 The plurality of conductive elements 202, 302 are formed on the surface of the layered body 20.

而各該定位結構202a,302a,303a係形成於對應之各該導電元件202,302上,且該定位結構202a係為凹穴,該凹 穴係V形凹穴或U型凹穴,但不以此為限。或該定位結構302a,303a係為凸出部。 Each of the positioning structures 202a, 302a, 303a is formed on each of the corresponding conductive elements 202, 302, and the positioning structure 202a is a recess, the concave V-shaped pockets or U-shaped pockets, but not limited to this. Or the positioning structures 302a, 303a are projections.

至於該凸出部若為金屬,其可為跡線302a’或其他外型,俾藉由導電材質之凸出部,令與凸出部對接之銲料潤濕攀附於其上,而有內聚之效果,俾產生定位之作用。 If the protruding portion is a metal, it may be a trace 302a' or other external shape, and the solder which is butted with the protruding portion is wetted and adhered thereto by the protruding portion of the conductive material, and is cohesive. The effect, the role of positioning.

此外,該導電元件與定位結構皆為金屬時,該導電元件與定位結構係可為一體成形或分別形成。 In addition, when the conductive element and the positioning structure are both metal, the conductive element and the positioning structure may be integrally formed or separately formed.

於一具體實施例中,該定位結構係絕緣材,其材質可例如為阻銲劑。再者,該定位結構303a係絕緣材時,該定位結構303a可為一環形中空塊體,以外露出該導電元件302之終端表面。當然,該塊體可為其他外型,並使該導電元件302之終端表面外露出塊體。 In a specific embodiment, the positioning structure is an insulating material, and the material thereof can be, for example, a solder resist. Moreover, when the positioning structure 303a is an insulating material, the positioning structure 303a can be an annular hollow block, and the terminal surface of the conductive element 302 is exposed. Of course, the block may have other shapes and expose the block surface to the end surface of the conductive member 302.

請參閱第5A至5圖,係顯示本發明半導體封裝件之製法剖視示意圖。 Referring to Figures 5A through 5, there are shown schematic cross-sectional views of a semiconductor package of the present invention.

如第5A圖所示,提供一封裝基板5,該封裝基板5包含:層狀本體50;複數導電元件502,係形成於該層狀本體50表面上;及複數定位結構502a,各係形成於對應之該導電元件502上。 As shown in FIG. 5A, a package substrate 5 is provided. The package substrate 5 includes: a layered body 50; a plurality of conductive elements 502 are formed on the surface of the layered body 50; and a plurality of positioning structures 502a are formed in each Corresponding to the conductive element 502.

該定位結構可為前述本發明所述之定位結構,亦即為凹穴或凸出部。定位結構為凹穴時,可為V形凹穴、U型凹穴或其他外型,但不以此為限。 The positioning structure may be the positioning structure of the present invention described above, that is, a recess or a projection. When the positioning structure is a recess, it may be a V-shaped recess, a U-shaped recess or other appearance, but is not limited thereto.

至於該凸出部若為金屬,其可為跡線或其他外型。 If the projection is metal, it can be a trace or other shape.

此外,該導電元件與定位結構皆為金屬時,該導電元件與定位結構係可為一體成形或分別形成。 In addition, when the conductive element and the positioning structure are both metal, the conductive element and the positioning structure may be integrally formed or separately formed.

於一具體實施例中,該定位結構係絕緣材,其材質可例如為阻銲劑。再者,該定位結構係絕緣材時,該定位結構可為一環形中空塊體,以外露出該導電元件之終端表面。當然,該塊體可為其他外型,並使該導電元件之終端表面外露出塊體。 In a specific embodiment, the positioning structure is an insulating material, and the material thereof can be, for example, a solder resist. Moreover, when the positioning structure is an insulating material, the positioning structure may be an annular hollow block, and the terminal surface of the conductive element is exposed. Of course, the block may have other shapes and expose the block surface to the end surface of the conductive member.

另一方面,該封裝基板5與該導電元件502同側表面上亦可接置有半導體元件52,例如半導體晶片。 On the other hand, a semiconductor element 52, such as a semiconductor wafer, may be attached to the same side surface of the package substrate 5 and the conductive element 502.

接著,如第5B圖所示,於該定位結構502a上接置電子元件5’,該電子元件5’係可為半導體晶片、封裝結構或如本圖所示之另一封裝基板等,其中,該電子元件5’表面係形成有複數金屬柱59及形成於該金屬柱59上之銲料58,且藉由該銲料58接置於該定位結構502a。 Next, as shown in FIG. 5B, the electronic component 5' is attached to the positioning structure 502a, and the electronic component 5' can be a semiconductor wafer, a package structure, or another package substrate as shown in the figure, wherein The surface of the electronic component 5' is formed with a plurality of metal pillars 59 and solder 58 formed on the metal pillars 59, and is attached to the positioning structure 502a by the solder 58.

如第5C圖所示,於該封裝基板5與電子元件5’之間形成封裝膠體57,以包覆該導電元件502、金屬柱59、銲料58及半導體元件52。再者,復可於該封裝基板5下表面形成銲球56,以供電性連接外部元件,例如電路板。 As shown in FIG. 5C, an encapsulant 57 is formed between the package substrate 5 and the electronic component 5' to cover the conductive component 502, the metal post 59, the solder 58, and the semiconductor component 52. Furthermore, solder balls 56 are formed on the lower surface of the package substrate 5 to electrically connect external components such as a circuit board.

此外,可了解的是,具有定位結構502a之封裝基板5並非如圖示一般地置於下方,其亦可為自上方對位連接至下方的電子元件5’。 In addition, it can be understood that the package substrate 5 having the positioning structure 502a is not disposed below as shown in the drawings, and may be an electronic component 5' that is connected to the lower side from the upper side.

根據前述之製法,本發明復提供一種半導體封裝件,係包括:本發明之封裝基板5;電子元件5’,係具有複數形成於該電子元件5’上之金屬柱59及形成於該金屬柱59上之銲料58,且該電子元件5’係藉由該銲料58接置於該定位結構502a;以及封裝膠體57,係形成於該封裝基板5 與電子元件5’之間,以包覆該導電元件502、金屬柱59及銲料58。 According to the foregoing method, the present invention further provides a semiconductor package comprising: the package substrate 5 of the present invention; the electronic component 5' having a plurality of metal pillars 59 formed on the electronic component 5' and formed on the metal pillar a solder 58 on the 59, and the electronic component 5' is attached to the positioning structure 502a by the solder 58; and an encapsulant 57 is formed on the package substrate 5 The conductive member 502, the metal post 59, and the solder 58 are coated between the electronic component 5' and the electronic component 5'.

前述之半導體封裝件中,復可包括半導體元件52,係設置並電性連接於該封裝基板5上或該電子元件5’上。且該半導體封裝件復可包括銲球56,係形成於該封裝基板5下表面,以供電性連接外部元件,例如電路板。 In the foregoing semiconductor package, the semiconductor element 52 is provided and electrically connected to the package substrate 5 or the electronic component 5'. The semiconductor package may include a solder ball 56 formed on a lower surface of the package substrate 5 to electrically connect external components such as a circuit board.

上述實施例係用以例示性說明本發明之原理及其功效,而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下,對上述實施例進行修改。因此本發明之權利保護範圍,應如後述之申請專利範圍所列。 The above embodiments are intended to illustrate the principles of the invention and its effects, and are not intended to limit the invention. Any of the above-described embodiments may be modified by those skilled in the art without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present invention should be as set forth in the appended claims.

20‧‧‧層狀本體 20‧‧‧Layered ontology

201‧‧‧導體層 201‧‧‧ conductor layer

202‧‧‧導電元件 202‧‧‧Conductive components

202a‧‧‧定位結構 202a‧‧‧ Positioning structure

Claims (38)

一種封裝基板,係包括:層狀本體;複數導電元件,係形成於該層狀本體表面上;以及複數定位結構,各係形成於對應之該導電元件上。 A package substrate includes: a layered body; a plurality of conductive elements formed on a surface of the layered body; and a plurality of positioning structures each formed on the corresponding conductive element. 如申請專利範圍第1項所述之封裝基板,其中,該導電元件係金屬柱。 The package substrate of claim 1, wherein the conductive member is a metal post. 如申請專利範圍第1項所述之封裝基板,其中,該定位結構係為凹穴或凸出部。 The package substrate of claim 1, wherein the positioning structure is a recess or a protrusion. 如申請專利範圍第2項所述之封裝基板,其中,該凹穴係V形凹穴或U形凹穴。 The package substrate of claim 2, wherein the recess is a V-shaped recess or a U-shaped recess. 如申請專利範圍第1項所述之封裝基板,其中,該導電元件與定位結構係為一體成形。 The package substrate of claim 1, wherein the conductive element and the positioning structure are integrally formed. 如申請專利範圍第1項所述之封裝基板,其中,該導電元件與定位結構係為金屬。 The package substrate of claim 1, wherein the conductive element and the positioning structure are metal. 如申請專利範圍第1項所述之封裝基板,其中,該定位結構係絕緣材。 The package substrate of claim 1, wherein the positioning structure is an insulating material. 如申請專利範圍第1項所述之封裝基板,其中,該定位結構係一環形中空塊體。 The package substrate of claim 1, wherein the positioning structure is an annular hollow block. 如申請專利範圍第8項所述之封裝基板,其中,該導電元件之終端表面係外露出該環形中空塊體。 The package substrate of claim 8, wherein the end surface of the conductive element exposes the annular hollow block. 一種半導體封裝件,係包括:如申請專利範圍第1項之封裝基板; 電子元件,係具有複數形成於該電子元件上之金屬柱及形成於該金屬柱上之銲料,且該電子元件係藉由該銲料接置於該定位結構;以及封裝膠體,係形成於該如申請專利範圍第1項之封裝基板與電子元件之間,以包覆該導電元件、金屬柱及銲料。 A semiconductor package comprising: a package substrate as claimed in claim 1; The electronic component has a plurality of metal pillars formed on the electronic component and solder formed on the metal pillar, and the electronic component is placed on the positioning structure by the solder; and the encapsulant is formed on the electronic component. The package substrate and the electronic component of claim 1 are coated to coat the conductive component, the metal pillar, and the solder. 如申請專利範圍第10項所述之半導體封裝件,其中,該導電元件係金屬柱。 The semiconductor package of claim 10, wherein the conductive element is a metal post. 如申請專利範圍第10項所述之半導體封裝件,其中,該定位結構係為凹穴或凸出部。 The semiconductor package of claim 10, wherein the positioning structure is a recess or a projection. 如申請專利範圍第12項所述之半導體封裝件,其中,該凹穴係V形凹穴或U形凹穴。 The semiconductor package of claim 12, wherein the recess is a V-shaped recess or a U-shaped recess. 如申請專利範圍第10項所述之半導體封裝件,其中,該導電元件與定位結構係為一體成形。 The semiconductor package of claim 10, wherein the conductive element and the positioning structure are integrally formed. 如申請專利範圍第10項所述之半導體封裝件,其中,該導電元件與定位結構係為金屬。 The semiconductor package of claim 10, wherein the conductive element and the positioning structure are metal. 如申請專利範圍第10項所述之半導體封裝件,其中,該定位結構係絕緣材。 The semiconductor package of claim 10, wherein the positioning structure is an insulating material. 如申請專利範圍第10項所述之半導體封裝件,其中,該定位結構係一環形中空塊體。 The semiconductor package of claim 10, wherein the positioning structure is an annular hollow block. 如申請專利範圍第17項所述之半導體封裝件,其中,該導電元件之終端表面係外露出該環形中空塊體。 The semiconductor package of claim 17, wherein the end surface of the conductive element exposes the annular hollow block. 如申請專利範圍第10項所述之半導體封裝件,其中,該電子元件係半導體晶片、封裝結構或另一封裝基板。 The semiconductor package of claim 10, wherein the electronic component is a semiconductor wafer, a package structure, or another package substrate. 一種封裝基板之製法,係包括:於一層狀本體上形成具有複數開口之光阻層;於該開口中形成導電元件,並於該導電元件之終端製作定位結構;以及移除該光阻層。 A method for manufacturing a package substrate, comprising: forming a photoresist layer having a plurality of openings on a layered body; forming a conductive element in the opening, and forming a positioning structure at a terminal of the conductive element; and removing the photoresist layer . 如申請專利範圍第20項所述之封裝基板之製法,其中,係於該開口中電鍍形成導電元件並形成定位結構,且該定位結構係為凹穴或凸出部。 The method of manufacturing a package substrate according to claim 20, wherein the conductive element is plated in the opening to form a positioning structure, and the positioning structure is a recess or a protrusion. 如申請專利範圍第21項所述之封裝基板之製法,其中,該凹穴係V形凹穴或U形凹穴。 The method of manufacturing a package substrate according to claim 21, wherein the recess is a V-shaped recess or a U-shaped recess. 如申請專利範圍第20項所述之封裝基板之製法,其中,該導電元件與定位結構係為一體成形。 The method of manufacturing a package substrate according to claim 20, wherein the conductive element and the positioning structure are integrally formed. 如申請專利範圍第20項所述之封裝基板之製法,其中,該導電元件與定位結構係為金屬。 The method of manufacturing a package substrate according to claim 20, wherein the conductive element and the positioning structure are metal. 如申請專利範圍第20項所述之封裝基板之製法,其中,該定位結構之製作係包括:整平該導電元件與光阻層之高度;於該導電元件與光阻層上形成絕緣層;以及圖案化該導電元件上之絕緣層,並移除該光阻層上的絕緣層,以於各該導電元件上形成至少一塊體,以作為該定位結構。 The method for manufacturing a package substrate according to claim 20, wherein the positioning structure comprises: flattening a height of the conductive element and the photoresist layer; forming an insulating layer on the conductive element and the photoresist layer; And patterning the insulating layer on the conductive element and removing the insulating layer on the photoresist layer to form at least one body on each of the conductive elements as the positioning structure. 如申請專利範圍第20項所述之封裝基板之製法,其中,該塊體係一環形中空塊體。 The method of manufacturing a package substrate according to claim 20, wherein the block system is an annular hollow block. 如申請專利範圍第26項所述之封裝基板之製法,其 中,該導電元件之終端表面係外露出該環形中空塊體。 The method for manufacturing a package substrate according to claim 26, The end surface of the conductive element exposes the annular hollow block. 一種半導體封裝件之製法,係包括:提供一封裝基板,該封裝基板包含:層狀本體;複數導電元件,係形成於該層狀本體表面上;及複數定位結構,係對應形成於各該導電元件上;於該定位結構上接置電子元件,其中,該電子元件表面係形成有複數金屬柱及形成於該金屬柱上之銲料,且藉由該銲料接置於該定位結構;以及於該封裝基板與電子元件之間形成封裝膠體,以包覆該導電元件、金屬柱及銲料。 A method of fabricating a semiconductor package, comprising: providing a package substrate, the package substrate comprising: a layered body; a plurality of conductive elements formed on a surface of the layered body; and a plurality of positioning structures corresponding to each of the conductive layers On the component, the electronic component is mounted on the positioning structure, wherein the surface of the electronic component is formed with a plurality of metal pillars and solder formed on the metal pillar, and the solder is placed on the positioning structure; An encapsulant is formed between the package substrate and the electronic component to encapsulate the conductive component, the metal post, and the solder. 如申請專利範圍第28項所述之半導體封裝件之製法,其中,該定位結構係為凹穴或凸出部。 The method of fabricating a semiconductor package according to claim 28, wherein the positioning structure is a recess or a protrusion. 如申請專利範圍第29項所述之半導體封裝件之製法,其中,該凹穴係V形凹穴或U形凹穴。 The method of fabricating a semiconductor package according to claim 29, wherein the recess is a V-shaped recess or a U-shaped recess. 如申請專利範圍第29項所述之半導體封裝件之製法,其中,該凸出部係導電跡線。 The method of fabricating a semiconductor package according to claim 29, wherein the protrusion is a conductive trace. 如申請專利範圍第28項所述之半導體封裝件之製法,該導電元件與定位結構係為一體成形。 The method of fabricating a semiconductor package according to claim 28, wherein the conductive element and the positioning structure are integrally formed. 如申請專利範圍第28項所述之半導體封裝件之製法,其中,該導電元件與定位結構係為金屬。 The method of fabricating a semiconductor package according to claim 28, wherein the conductive element and the positioning structure are metal. 如申請專利範圍第28項所述之半導體封裝件之製法,其中,該定位結構係絕緣材。 The method of fabricating a semiconductor package according to claim 28, wherein the positioning structure is an insulating material. 如申請專利範圍第28項所述之半導體封裝件之製法, 其中,該定位結構係一環形中空塊體。 The method of manufacturing a semiconductor package as described in claim 28, Wherein, the positioning structure is an annular hollow block. 如申請專利範圍第35項所述之半導體封裝件之製法,其中,該導電元件之終端表面係外露出該環形中空塊體。 The method of fabricating a semiconductor package according to claim 35, wherein the end surface of the conductive element exposes the annular hollow block. 如申請專利範圍第28項所述之半導體封裝件之製法,其中,該如申請專利範圍第1項之封裝基板上或該電子元件上係設有半導體元件。 The method of fabricating a semiconductor package according to claim 28, wherein the semiconductor device is provided on or on the package substrate of claim 1 of the patent application. 如申請專利範圍第28項所述之半導體封裝件之製法,其中,該電子元件係半導體晶片、封裝結構或另一封裝基板。 The method of fabricating a semiconductor package according to claim 28, wherein the electronic component is a semiconductor wafer, a package structure or another package substrate.
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