TW201518024A - Manufacturing process of component mounting substrate - Google Patents

Manufacturing process of component mounting substrate Download PDF

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TW201518024A
TW201518024A TW103123616A TW103123616A TW201518024A TW 201518024 A TW201518024 A TW 201518024A TW 103123616 A TW103123616 A TW 103123616A TW 103123616 A TW103123616 A TW 103123616A TW 201518024 A TW201518024 A TW 201518024A
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resin composition
thermosetting resin
layer
substrate
resin
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TW103123616A
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TWI620613B (en
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Shigeo Nakamura
Masatoshi Watanabe
Chihiro Miyake
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Ajinomoto Kk
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0271Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/24Impregnating materials with prepolymers which can be polymerised in situ, e.g. manufacture of prepregs
    • C08J5/246Impregnating materials with prepolymers which can be polymerised in situ, e.g. manufacture of prepregs using polymer based synthetic fibres
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3494Heating methods for reflowing of solder
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/06Thermal details
    • H05K2201/068Thermal details wherein the coefficient of thermal expansion is important

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Laminated Bodies (AREA)

Abstract

The present invention provides a manufacturing process of component mounting substrate, which can suppress the warpage of a substrate even after going through the component mounting at a high temperature by a reflow process to correspond to new thinning of the component mounting substrate, and to a thermosetting resin composition suitable for formation of an insulating layer of a thin component mounting substrate. The feature of the manufacturing process of component mounting substrate of the present invention comprises the following steps: a thermal curing process of forming a cured layer by heating and curing a thermosetting resin composition layer formed on an internal layer substrate; and a reflow process of mounting a component on the substrate having the cured layer by reflow, wherein the shrinkage rate (S1) in the x-y direction after the thermal curing process of the thermosetting resin composition layer is 0.35% or smaller, the shrinkage rate (S2) in the x-y direction after the reflow process of the cured layer is 0.4% or smaller, and S1 and S2 satisfies the relation: S2 - S1 ≤ 0.08, and the thermosetting resin composition of the present invention is a thermosetting resin composition for formation of an insulating layer, whose feature is that the shrinkage rate (S2) in the x-y direction after heating a cured thermosetting resin composition, which is thermally cured under the condition that the shrinkage rate (S1) in the x-y direction after thermal curing is 0.35% or smaller, at a reflow temperature profile based on IPC/JEDEC J-STD-020C is 0.4% or smaller, and S1 and S2 satisfies the relation: S2 - S1 ≤ 0.08.

Description

零件安裝基板之製造方法 Method for manufacturing component mounting substrate

本發明係關於零件安裝基板之製造方法及用於形成零件安裝基板之絕緣層之熱硬化性樹脂組成物。 The present invention relates to a method of manufacturing a component mounting substrate and a thermosetting resin composition for forming an insulating layer of the component mounting substrate.

多層印刷基板之製造技術已知有利用於芯基板上交互重疊絕緣層與導體層而成之增層方式之製造方法。利用增層方式之製造方法中,一般絕緣層係使樹脂組成物硬化而形成。作為該樹脂組成物已知係使用環氧樹脂組成物(專利文獻1)。 A manufacturing method of a multilayer printed substrate is known to be advantageous in a method of forming a layered layer in which an insulating layer and a conductor layer are alternately overlapped on a core substrate. In the production method using the build-up method, generally, the insulating layer is formed by curing the resin composition. An epoxy resin composition is known as the resin composition (Patent Document 1).

近年來,製造多層印刷基板時,為防止因絕緣層與導體層之熱膨脹差造成之龜裂或電路變形,而傾向於將二氧化矽粒子等無機填充材大量調配於樹脂組成物中(專利文獻2)。 In recent years, in order to prevent cracking or circuit deformation caused by the difference in thermal expansion between the insulating layer and the conductor layer, a large amount of inorganic filler such as cerium oxide particles tends to be formulated in a resin composition (Patent Document) 2).

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特開2007-254709號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2007-254709

[專利文獻2]日本特開2010-202865號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2010-202865

在多層印刷基板中期望進而薄型化中,芯基板或絕緣層之厚度有逐漸變薄之傾向。然而,因芯基板或絕緣層之薄型化,絕緣層容易受到因熱收縮之影響。本發明人等於利用回焊步驟將零件安裝於基板上而製造零件安裝基板時,發現尤其關於薄型基板,因高溫下之絕緣層收縮,使基板之翹曲容易顯現化之問題。 In the multilayer printed substrate, it is desired to further reduce the thickness of the core substrate or the insulating layer. However, due to the thinning of the core substrate or the insulating layer, the insulating layer is susceptible to heat shrinkage. When the inventors of the present invention manufactured the component mounting substrate by mounting the component on the substrate by the reflow step, it was found that the thin substrate was particularly likely to be warped due to shrinkage of the insulating layer at a high temperature.

據此,本發明之課題為了對應於零件安裝基板之進而薄型化,而提供即使經歷利用回焊步驟之零件安裝之高溫後,亦不易產生基板翹曲之零件安裝基板之製造方法。再者本發明之課題係提供一種適於薄型之零件安裝基板之絕緣層形成之熱硬化性樹脂組成物。 Accordingly, the problem of the present invention is to provide a method of manufacturing a component mounting substrate which is less likely to cause warpage of the substrate even after the high temperature of the component mounted by the reflow step is applied, in order to further reduce the thickness of the component mounting substrate. Further, an object of the present invention is to provide a thermosetting resin composition suitable for forming an insulating layer of a thin component mounting substrate.

本發明人等鑒於上述課題而積極檢討之結果,著眼於零件安裝基板之絕緣層形成所使用之熱硬化性樹脂組成物中,於內層基板上形成之熱硬化性樹脂組成物層之熱硬化步驟後之收縮率,與因熱硬化形成之硬化物層(絕緣層)之回焊步驟後之收縮率及該等之差,發現該等各收縮率、及該等收縮率之差成為一定值以下時,即使是薄型基板亦可抑制回焊步驟後之基板之翹曲,因而完成本發明。亦即本發明包含以下之內容。 In the thermosetting resin composition used for forming the insulating layer of the component mounting substrate, the inventors of the present invention have been focusing on the above-mentioned problems, and have focused on the thermosetting resin composition layer formed on the inner substrate. The shrinkage ratio after the step, the shrinkage ratio after the reflow step of the cured layer (insulating layer) formed by thermal hardening, and the difference between the above, and the difference between the shrinkage ratios and the shrinkage ratios are found to be constant values. In the following, even if the thin substrate can suppress the warpage of the substrate after the reflow step, the present invention has been completed. That is, the present invention includes the following contents.

[1]一種零件安裝基板之製造方法,其特徵係包含下述步驟:使形成於內層基板上之熱硬化性樹脂組成物層加熱硬化,形成硬化物層之熱硬化步驟,及利用回焊將零件安裝於具有該硬化物層之基板上之回焊步驟;且熱硬化性樹脂組成物層之熱硬化步驟後之x-y方向之收縮率(S1)為0.35%以下,硬化物層之回焊步驟後之x-y方向之收縮率(S2)為0.4%以下,且S1與S2滿足S2-S1≦0.08之關係。 [1] A method of manufacturing a component mounting substrate, comprising the steps of: heat-hardening a thermosetting resin composition layer formed on an inner layer substrate, forming a hardening step of the cured layer, and utilizing reflow a reflowing step of mounting a component on a substrate having the cured layer; and a shrinkage ratio (S1) in the xy direction after the thermosetting step of the thermosetting resin composition layer is 0.35% or less, and reflowing of the cured layer The shrinkage ratio (S2) in the xy direction after the step is 0.4% or less, and S1 and S2 satisfy the relationship of S2-S1 ≦ 0.08.

[2]如[1]所記載之方法,其中熱硬化性樹脂組成物含有環氧樹脂、硬化劑及無機填充材。 [2] The method according to [1], wherein the thermosetting resin composition contains an epoxy resin, a curing agent, and an inorganic filler.

[3]如[2]所記載之方法,其含有二氧化矽作為無機填充材。 [3] The method according to [2], which comprises cerium oxide as an inorganic filler.

[4]如[2]所記載之方法,其含有摻雜鈦之二氧化矽作為無機填充材。 [4] The method according to [2], which comprises titanium-doped cerium oxide as an inorganic filler.

[5]如[2]~[4]中任一項所記載之方法,其中將熱硬化性樹脂組成物中之不揮發性成分設為100質量%時,熱硬化性樹脂組成物中之無機填充材之含量為40質量%以上。 [5] The method according to any one of [2] to [4] wherein, when the nonvolatile component in the thermosetting resin composition is 100% by mass, the inorganic component in the thermosetting resin composition The content of the filler is 40% by mass or more.

[6]如[1]~[5]中任一項所記載之方法,其中熱硬化步驟中之加熱溫度為120℃~240℃。 [6] The method according to any one of [1] to [5] wherein the heating temperature in the thermosetting step is from 120 ° C to 240 ° C.

[7]如[1]~[6]中任一項所記載之方法,其中回焊步驟中之峰值溫度為210℃~330℃。 [7] The method according to any one of [1] to [6] wherein the peak temperature in the reflow step is 210 ° C to 330 ° C.

[8]如[1]~[7]中任一項所記載之方法,其中熱硬化性樹脂組成物層係藉由將熱硬化性樹脂組成物含浸於纖維基 材中所成之預浸體而形成。 [8] The method according to any one of [1] to [7] wherein the thermosetting resin composition layer is impregnated with a fiber base by a thermosetting resin composition Formed from a prepreg formed in the material.

[9]如[1]~[8]中任一項所記載之方法,其中熱硬化性樹脂組成物層係於內層基板上層合接著薄膜所形成者,該接著薄膜係在載體薄膜上形成有熱硬化性樹脂粗組成物層而成。 [9] The method according to any one of [1] to [8] wherein the thermosetting resin composition layer is laminated on the inner substrate and then formed by a film formed on the carrier film. It is made of a layer of a thermosetting resin coarse composition.

[10]如[1]~[8]中任一項所記載之方法,其中熱硬化性樹脂組成物層係於內層基板上層合附載體之預浸體所形成者,該附載體之預浸體係在載體薄膜上形成有將熱硬化性樹脂組成物含浸於纖維基材上而成之預浸體者。 [10] The method according to any one of [1] to [8] wherein the thermosetting resin composition layer is formed by laminating a prepreg to the carrier on the inner substrate, and the carrier is pretreated In the impregnation system, a prepreg obtained by impregnating a fibrous substrate with a thermosetting resin composition is formed on a carrier film.

[11]如[1]~[10]中任一項所記載之方法,其中硬化物層之厚度為3~200μm。 [11] The method according to any one of [1] to [10] wherein the thickness of the cured layer is from 3 to 200 μm.

[12]如[1]~[11]中任一項所記載之方法,其中零件為半導體晶片、中介片(Interposer)或被動元件。 [12] The method according to any one of [1] to [11] wherein the component is a semiconductor wafer, an interposer or a passive component.

[13]如[12]所記載之方法,其中零件為半導體晶片。 [13] The method of [12], wherein the part is a semiconductor wafer.

[14]一種熱硬化性樹脂組成物,其係用以形成絕緣層之熱硬化性樹脂組成物,其特徵為在使熱硬化後之x-y方向之收縮率(S1)成為0.35%以下之條件下熱硬化之該熱硬化性樹脂組成物之硬化物,依據IPC/JEDEC J-STD-020C之回焊溫度分佈加熱後之x-y方向之收縮率(S2)為0.4%以下,且S1與S2滿足S2-S1≦0.08之關係。 [14] A thermosetting resin composition which is a thermosetting resin composition for forming an insulating layer, which is characterized in that the shrinkage ratio (S1) in the xy direction after heat curing is 0.35% or less The cured product of the thermosetting resin composition which is thermally hardened has a shrinkage ratio (S2) of 0.4% or less in the xy direction after heating according to the reflow temperature distribution of IPC/JEDEC J-STD-020C, and S1 and S2 satisfy S2. -S1≦0.08 relationship.

[15]如[14]所記載之熱硬化性樹脂組成物,其中回焊之峰值溫度為260℃。 [15] The thermosetting resin composition according to [14], wherein the peak temperature of the reflow is 260 °C.

[16]如[15]所記載之熱硬化性樹脂組成物,其中熱硬 化性樹脂組成物含有環氧樹脂、硬化劑及無機填充材。 [16] The thermosetting resin composition as described in [15], wherein the thermosetting resin The chemical resin composition contains an epoxy resin, a hardener, and an inorganic filler.

[17]如[16]所記載之熱硬化性樹脂組成物,其含有二氧化矽作為無機填充材。 [17] The thermosetting resin composition according to [16], which comprises cerium oxide as an inorganic filler.

[18]如[16]所記載之熱硬化性樹脂組成物,其含有摻雜鈦之二氧化矽作為無機填充材。 [18] The thermosetting resin composition according to [16], which contains titanium-doped cerium oxide as an inorganic filler.

[19]如[16]~[18]中任一項所記載之熱硬化性樹脂組成物,其中將熱硬化性樹脂組成物中之不揮發性成分設為100質量%時,熱硬化性樹脂組成物中之無機填充材之含量為40質量%以上。 [19] The thermosetting resin composition according to any one of [16], wherein the thermosetting resin is a non-volatile component in the thermosetting resin composition of 100% by mass. The content of the inorganic filler in the composition is 40% by mass or more.

[20]一種預浸體,其係將如[15]~[19]中任一項所記載之熱硬化性樹脂組成物含浸於纖維基材中而成。 [20] A prepreg obtained by impregnating a thermosetting resin composition according to any one of [15] to [19] into a fibrous base material.

[21]一種多層印刷配線板,其係由如[15]~[19]中任一項所記載之熱硬化性樹脂組成物之硬化物形成絕緣層而成。 [21] A multilayer printed wiring board obtained by forming an insulating layer of a cured product of the thermosetting resin composition according to any one of [15] to [19].

[22]一種零件安裝基板,其係由如[15]~[19]中任一項所記載之熱硬化性樹脂組成物之硬化物形成絕緣層而成。 [22] A component mounting substrate obtained by forming an insulating layer of a cured product of the thermosetting resin composition according to any one of [15] to [19].

[23]如[22]所記載之零件安裝基板,其中零件為半導體晶片、中介片或被動元件。 [23] The component mounting substrate as recited in [22], wherein the component is a semiconductor wafer, an interposer, or a passive component.

[24]如[23]所記載之零件安裝基板,其中零件為半導體晶片。 [24] The component mounting substrate according to [23], wherein the component is a semiconductor wafer.

依據本發明,係提供一種即使經歷因回焊步 驟之零件安裝之高溫後,亦不易產生基板翹曲之零件安裝基板之製造方法。再者依據本發明,係提供一種適於薄型之零件安裝基板之絕緣層形成之熱硬化性樹脂組成物。本發明尤其可適當地使用於容易產生基板翹曲之薄形零件安裝基板之製造。 According to the present invention, it is provided that even if it is subjected to a reflow step After the high temperature of the component mounting, it is also difficult to produce a method of manufacturing the component mounting substrate in which the substrate warps. Further, according to the present invention, there is provided a thermosetting resin composition suitable for forming an insulating layer of a thin component mounting substrate. The present invention is particularly suitably used for the manufacture of a thin component mounting substrate which is prone to warpage of the substrate.

圖1係顯示計算S1及S2時之A、B、C、D各點間之稱呼之圖。 Fig. 1 is a diagram showing the names between points A, B, C, and D when S1 and S2 are calculated.

圖2係說明IPC/JEDEC J-STD-020C所記載之回焊溫度分佈之圖。 Fig. 2 is a view showing the reflow temperature distribution described in IPC/JEDEC J-STD-020C.

以下,依據本發明之較佳實施形態詳細說明本發明。 Hereinafter, the present invention will be described in detail based on preferred embodiments of the present invention.

本發明之一實施形態係一種零件安裝基板之製造方法,其特徵係包含使形成於內層基板上之熱硬化性樹脂組成物層加熱硬化,形成硬化物層之熱硬化步驟,及利用回焊將零件安裝於具有該硬化物層之基板上之回焊步驟,且熱硬化性樹脂組成物層之熱硬化步驟後之x-y方向之收縮率(S1)為0.35%以下,硬化物層之回焊步驟後之x-y方向之收縮率(S2)為0.4%以下,且S1與S2滿足S2-S1≦0.08之關係。 An embodiment of the present invention provides a method of manufacturing a component mounting substrate, comprising the steps of thermally hardening a thermosetting resin composition layer formed on an inner layer substrate, forming a cured layer, and reflowing a reflowing step of mounting a component on a substrate having the cured layer, and a shrinkage ratio (S1) in the xy direction after the thermosetting step of the thermosetting resin composition layer is 0.35% or less, and reflowing of the cured layer The shrinkage ratio (S2) in the xy direction after the step is 0.4% or less, and S1 and S2 satisfy the relationship of S2-S1 ≦ 0.08.

〈熱硬化步驟〉 <Thermal hardening step>

本發明之製造方法包含熱硬化步驟,熱硬化步驟係使形成於內層基板上之熱硬化性樹脂組成物層加熱硬化而形成硬化物層。 The manufacturing method of the present invention includes a thermosetting step of thermally curing the thermosetting resin composition layer formed on the inner layer substrate to form a cured layer.

熱硬化之溫度具體而言可隨使用之熱硬化性樹脂組成物之組成而不同,但基於硬化時間之縮短化與基板之耐熱性均衡之觀點,一般為120℃~240℃,較好為140℃~210℃,更好為150℃~200℃。 The temperature of the heat curing may be different depending on the composition of the thermosetting resin composition to be used, but it is generally 120 ° C to 240 ° C, preferably 140, based on the viewpoint that the hardening time is shortened and the heat resistance of the substrate is balanced. °C~210°C, more preferably 150°C~200°C.

本發明中所謂「內層基板」係製造零件內建基板等之印刷基板時成為中間製造物之基板,係指於內層基板上進而形成絕緣層及/或導體層,且構成印刷基板之內層之基板。內層基板之一面或兩面亦可具有經圖形加工之電路配線。內層基板所用之基板列舉為例如玻璃環氧基板、金屬基板、聚酯基板、聚醯亞胺基板、BT樹脂基板、熱硬化型聚苯醚基板、無芯基板等。 In the present invention, the "inner substrate" is a substrate which is an intermediate product when a printed circuit board such as a component built-in substrate is manufactured, and an insulating layer and/or a conductor layer are formed on the inner substrate, and constitute a printed circuit board. The substrate of the layer. One or both sides of the inner substrate may also have patterned circuit wiring. The substrate used for the inner layer substrate is exemplified by, for example, a glass epoxy substrate, a metal substrate, a polyester substrate, a polyimide substrate, a BT resin substrate, a thermosetting polyphenylene ether substrate, a coreless substrate, or the like.

基板之一面或兩面具有電路配線時,該電路配線之厚度並無特別限制,但基於層之薄型化之觀點,較好為70μm以下,更好為30μm以下,又更好為20μm以下。電路配線厚度之下限並無特別限制,較好為1μm以上,更好為3μm以上,又更好為5μm以上。 When the circuit wiring is provided on one surface or both surfaces of the substrate, the thickness of the circuit wiring is not particularly limited. However, from the viewpoint of thinning the layer, it is preferably 70 μm or less, more preferably 30 μm or less, and still more preferably 20 μm or less. The lower limit of the thickness of the circuit wiring is not particularly limited, but is preferably 1 μm or more, more preferably 3 μm or more, and still more preferably 5 μm or more.

電路配線之線/間隔比並無特別限制,但為了抑制硬化體表面之起伏,較好為200/200μm以下,更好為100/100μm以下,又更好為40/40μm以下,再更好為 20/20μm以下,最好為8/8μm。電路配線之線/間隔比之下限並無特別限制,但為了使樹脂對間隔間之埋入良好,故較好為0.5/0.5μm以上,更好為1/1μm以上。 The line/space ratio of the circuit wiring is not particularly limited. However, in order to suppress the undulation of the surface of the hardened body, it is preferably 200/200 μm or less, more preferably 100/100 μm or less, still more preferably 40/40 μm or less, and even more preferably 20/20 μm or less, preferably 8/8 μm. The lower limit of the line/space ratio of the circuit wiring is not particularly limited. However, in order to facilitate the embedding of the resin between the spaces, it is preferably 0.5/0.5 μm or more, more preferably 1/1 μm or more.

本發明之熱硬化性樹脂組成物層所用之熱硬化性樹脂組成物並無特別限制,只要以其硬化物作為絕緣層,具有充分硬度與絕緣性者即可。較好使用例如含有環氧樹脂、硬化劑及無機填充材之熱硬化性樹脂組成物。 The thermosetting resin composition used for the thermosetting resin composition layer of the present invention is not particularly limited as long as the cured product is used as an insulating layer and has sufficient hardness and insulation properties. For example, a thermosetting resin composition containing an epoxy resin, a curing agent, and an inorganic filler is preferably used.

(環氧樹脂) (epoxy resin)

本發明中使用之環氧樹脂並無特別限制,列舉為雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、雙酚AF型環氧樹脂、酚酚醛清漆型環氧樹脂、第三丁基-兒茶酚型環氧樹脂、萘酚型環氧樹脂、萘型環氧樹脂、萘醚型環氧樹脂、縮水甘油胺型環氧樹脂、甲酚酚醛清漆型環氧樹脂、聯苯型環氧樹脂、蒽型環氧樹脂、線狀脂肪族環氧樹脂、具有丁二烯構造之環氧樹脂、脂環式環氧樹脂、雜環式環氧樹脂、含螺環之環氧樹脂、環己烷二甲醇型環氧樹脂、三羥甲基型環氧樹脂、鹵化環氧樹脂、二環戊二烯型環氧樹脂等。該等可使用1種或組合2種以上使用。 The epoxy resin used in the present invention is not particularly limited, and is exemplified by bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, bisphenol AF type epoxy resin, phenol novolac varnish. Epoxy resin, t-butyl-catechol epoxy resin, naphthol epoxy resin, naphthalene epoxy resin, naphthalene ether epoxy resin, glycidylamine epoxy resin, cresol novolac Epoxy resin, biphenyl type epoxy resin, bismuth type epoxy resin, linear aliphatic epoxy resin, epoxy resin with butadiene structure, alicyclic epoxy resin, heterocyclic epoxy resin, A spiro ring-containing epoxy resin, a cyclohexanedimethanol type epoxy resin, a trimethylol type epoxy resin, a halogenated epoxy resin, a dicyclopentadiene type epoxy resin, or the like. These may be used alone or in combination of two or more.

該等中,基於提高耐熱性、提高絕緣信賴性、提高與金屬箔之密著性之觀點,以雙酚A型環氧樹脂、萘酚型環氧樹脂、藥型環氧樹脂、聯苯型環氧樹脂、萘醚型環氧樹脂、蒽型環氧樹脂、具有丁二烯構造之環氧 樹脂、二環戊二烯型環氧樹脂較佳。具體而言,列舉為雙酚A型環氧樹脂(三菱化學(股)製之「EPICOTE 828EL」、「YL980」)、雙酚F型環氧樹脂(三菱化學(股)製之「jER 806H」、「YL983U」)、雙酚A型與雙酚F型之1:1混合物(新日鐵化學(股)製之「ZX1059」)、萘型2官能環氧樹脂(DIC(股)製之「HP4032」、「HP4032D」、「HP4032SS」、「EXA4032SS」)、萘型4官能環氧樹脂(DIC(股)製之「HP4700」、「HP4710」)、萘酚型環氧樹脂(東都化成(股)製之「ESN-475V」)、具有丁二烯構造之環氧樹脂(Daicel化學工業(股)製之「PB-3600」)、具有聯苯構造之環氧樹脂(日本化藥(股)製之「NC3000H」、「NC3000L」、「NC3100」、三菱化學(股)製之「YX4000」、「YX4000H」、「YX4000HK」、「YL6121」)、蒽型環氧樹脂(三菱化學(股)製之「YX8800」)、萘醚型環氧樹脂(DIC(股)製之「EXA-7310」、「EXA-7311」、「EXA-7311L」、「EXA-7311-G3」)、二環戊二烯型環氧樹脂(DIC(股)製之「HP-7200H」)等。 Among these, bisphenol A type epoxy resin, naphthol type epoxy resin, drug type epoxy resin, and biphenyl type are used in view of improving heat resistance, improving insulation reliability, and improving adhesion to metal foil. Epoxy resin, naphthalene ether type epoxy resin, bismuth type epoxy resin, epoxy having butadiene structure A resin or a dicyclopentadiene type epoxy resin is preferred. Specifically, bisphenol A type epoxy resin ("EPICOTE 828EL" and "YL980" manufactured by Mitsubishi Chemical Corporation) and bisphenol F type epoxy resin ("jER 806H" manufactured by Mitsubishi Chemical Corporation) , "YL983U"), a 1:1 mixture of bisphenol A and bisphenol F ("ZX1059" manufactured by Nippon Steel Chemical Co., Ltd.), and a naphthalene type 2-functional epoxy resin (made by DIC) HP4032", "HP4032D", "HP4032SS", "EXA4032SS"), naphthalene type 4-functional epoxy resin ("HP4700", "HP4710" made by DIC), naphthol type epoxy resin (Dongdu Huacheng) "ESN-475V"), epoxy resin with butadiene structure ("PB-3600" manufactured by Daicel Chemical Industry Co., Ltd.), epoxy resin with biphenyl structure (Nippon Chemical Co., Ltd.) "NC3000H", "NC3000L", "NC3100", "YX4000", "YX4000H", "YX4000HK" and "YL6121" made by Mitsubishi Chemical Corporation, and 蒽-type epoxy resin (Mitsubishi Chemical Co., Ltd.) "YX8800"), naphthalene ether type epoxy resin ("EXA-7310", "EXA-7311", "EXA-7311L", "EXA-7311-G3" made by DIC), and dicyclopentylene Ethylene type epoxy resin ("DIC" P-7200H") and so on.

環氧樹脂亦可併用2種以上,但以1分子中含有具有2個以上環氧基之環氧樹脂較佳。其中,更好為含有1分子中具有2個以上環氧基、在溫度20℃為液狀之芳香族系環氧樹脂(以下,稱為「液狀環氧樹脂」)、與1分子中具有3個以上環氧樹脂、在溫度20℃為固體狀之芳香族系環氧樹脂(以下稱為「固體狀環氧樹脂」)之樣 態。又,本發明中所謂芳香族系環氧樹脂係指其分子內具有芳香環構造之環氧樹脂。併用液狀環氧樹脂與固體狀環氧樹脂作為環氧樹脂時,就以接著薄膜形態使用樹脂組成物時具有適度可撓性方面或樹脂組成物之硬化物具有適度破裂強度方面而言,其調配比例(液狀環氧樹脂:固體狀環氧樹脂)以質量比計,較好為1:0.1~1:2之範圍,更好為1:0.3~1:1.8之範圍,又更好為1:0.6~1:1.5之範圍。 Epoxy resins may be used in combination of two or more kinds, but an epoxy resin having two or more epoxy groups in one molecule is preferred. In particular, it is more preferably an aromatic epoxy resin (hereinafter referred to as "liquid epoxy resin") having two or more epoxy groups in one molecule and liquid at a temperature of 20 ° C, and one molecule Three or more epoxy resins and aromatic epoxy resins (hereinafter referred to as "solid epoxy resins") which are solid at a temperature of 20 ° C state. Moreover, the aromatic epoxy resin in the present invention means an epoxy resin having an aromatic ring structure in its molecule. When a liquid epoxy resin and a solid epoxy resin are used as the epoxy resin, the resin composition is used in the form of a film, and the resin composition has moderate flexibility or a cured product of the resin composition has moderate burst strength. The blending ratio (liquid epoxy resin: solid epoxy resin) is preferably in the range of 1:0.1 to 1:2, more preferably in the range of 1:0.3 to 1:1.8, and more preferably in terms of mass ratio. 1:0.6~1:1.5 range.

至於液狀環氧樹脂,較好為雙酚A型環氧樹脂、雙酚F型環氧樹脂、酚酚醛清漆型環氧樹脂及萘型環氧樹脂,更好為雙酚A型環氧樹脂及萘型環氧樹脂。該等可使用1種或組合2種以上使用。 As for the liquid epoxy resin, it is preferably a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, a phenol novolak type epoxy resin, and a naphthalene type epoxy resin, more preferably a bisphenol A type epoxy resin. And naphthalene type epoxy resin. These may be used alone or in combination of two or more.

至於固體狀環氧樹脂較好為4官能萘型環氧樹脂、甲酚酚醛清漆型環氧樹脂、二環戊二烯型環氧樹脂、三酚環氧樹脂、萘酚酚醛清漆型環氧樹脂、聯苯型環氧樹脂或萘醚型環氧樹脂,更好為4官能萘型環氧樹脂、聯苯型環氧樹脂及萘醚型環氧樹脂。該等可使用1種或組合2種以上使用。 The solid epoxy resin is preferably a 4-functional naphthalene epoxy resin, a cresol novolak epoxy resin, a dicyclopentadiene epoxy resin, a trisphenol epoxy resin, a naphthol novolac epoxy resin. The biphenyl type epoxy resin or the naphthene ether type epoxy resin is more preferably a tetrafunctional naphthalene type epoxy resin, a biphenyl type epoxy resin or a naphthalene ether type epoxy resin. These may be used alone or in combination of two or more.

適於本發明之製造方法之樹脂組成物中,基於提高樹脂組成物之硬化物之機械強度或耐水性之觀點,將樹脂組成物中之不揮發成分設為100質量%時,環氧樹脂之含量較好為3~35質量%,更好為5~40質量%,又更好為10~45質量%。 In the resin composition of the production method of the present invention, when the non-volatile content in the resin composition is 100% by mass based on the viewpoint of improving the mechanical strength or water resistance of the cured product of the resin composition, the epoxy resin is used. The content is preferably from 3 to 35% by mass, more preferably from 5 to 40% by mass, even more preferably from 10 to 45% by mass.

(硬化劑) (hardener)

本發明所使用之硬化劑並無特別限制,列舉為例如酚系硬化劑、萘酚系硬化劑、活性酯系硬化劑、苯并噁嗪系硬化劑、氰酸酯系硬化劑、酸酐系硬化劑等,其中以酚系硬化劑、萘酚系硬化劑、活性酯系硬化劑較佳。該等可使用1種,或組合2種以上使用。 The curing agent to be used in the present invention is not particularly limited, and examples thereof include a phenol-based curing agent, a naphthol-based curing agent, an active ester-based curing agent, a benzoxazine-based curing agent, a cyanate-based curing agent, and an acid anhydride-based curing agent. Among the agents, a phenolic curing agent, a naphthol curing agent, and an active ester curing agent are preferred. These may be used alone or in combination of two or more.

酚系硬化劑、萘酚系硬化劑並無特別限制,列舉為例如具有酚醛清漆構造之酚系硬化劑或具有酚醛清漆構造之萘酚系硬化劑,較好為酚酚醛清漆樹脂、含三嗪骨架之酚酚醛清漆樹脂、萘酚酚醛清漆樹脂、萘酚芳烷基型樹脂、含三嗪骨架之萘酚樹脂、聯苯芳烷基型酚樹脂。作為,於市售品聯苯芳烷基型酚樹脂為「MEH-7700」、「MEH-7810」、「MEH-7851」、「MEH-7851-4H」(明和化成(股)製)、「GPH」(日本化藥(股)製),於萘酚酚醛清漆樹脂為「NHN」、「CBN」(日本化藥(股)製),於萘酚芳烷基型樹脂為「SN170」、「SN180」、「SN190」、「SN475」、「SN485」、「SN495」、「SN395」、「SN375」(東都化成(股)製),於酚酚醛清漆樹脂為「TD2090」(DIC(股)製)、含三嗪骨架之酚酚醛清漆樹脂「LA3018」、「LA7052」、「LA7054」、「LA1356」(DIC(股)製)等。該等可使用1種或併用2種以上。 The phenolic curing agent and the naphthol-based curing agent are not particularly limited, and examples thereof include a phenolic curing agent having a novolac structure or a naphthol curing agent having a novolac structure, preferably a phenol novolac resin and a triazine-containing curing agent. Skeletal phenol novolak resin, naphthol novolak resin, naphthol aralkyl type resin, naphthol resin containing triazine skeleton, biphenyl aralkyl type phenol resin. The commercially available biphenyl aralkyl phenol resins are "MEH-7700", "MEH-7810", "MEH-7851", "MEH-7851-4H" (Mingwa Kasei Co., Ltd.), " GPH" (Nippon Chemical Co., Ltd.), naphthol novolac resin is "NHN", "CBN" (made by Nippon Kayaku Co., Ltd.), and naphthol aralkyl type resin is "SN170", " SN180", "SN190", "SN475", "SN485", "SN495", "SN395", "SN375" (made by Tohto Kasei Co., Ltd.), and phenol novolak resin is "TD2090" (DIC system) ), phenol novolac resin "LA3018", "LA7052", "LA7054", "LA1356" (made by DIC), etc. containing a triazine skeleton. These may be used alone or in combination of two or more.

活性酯系硬化劑雖無特別限制,但較好使用一般之酚酯類、硫酚酯類、N-羥基胺酯類、雜環羥基化合物之酯類等之1分子中具有2個以上反應活性高的酯基之 化合物。該活性酯系硬化劑較好係藉由使羧酸化合物及/或硫代羧酸化合物與羥基化合物及/或硫醇化合物之縮合反應而得者。尤其就提高耐熱性之觀點而言,較好為由羧酸化合物與羥基化合物獲得之活性酯系硬化劑,更好為由羧酸化合物與酚化合物及/或萘酚化合物獲得之活性酯系硬化劑。至於羧酸化合物列舉為例如苯甲酸、乙酸、琥珀酸、馬來酸、衣康酸、鄰苯二甲酸、間苯二甲酸、對苯二甲酸、連苯四酸等。酚化合物或萘酚化合物列舉為例如氫醌、間苯二酚、雙酚A、雙酚F、雙酚S、酚酞、甲基化雙酚A、甲基化雙酚F、甲基化雙酚S、苯酚、鄰-甲酚、間-甲酚、對-甲酚、兒茶酚、α-萘酚、β-萘酚、1,5-二羥基萘、1,6-二羥基萘、2,6-二羥基萘、二羥基二苯甲酮、三羥基二苯甲酮、四羥基二苯甲酮、均苯三酚(phloroglucin)、苯三酚、二環戊二烯型之二酚化合物(聚環戊二烯型之二酚化合物)、酚酚醛清漆等。活性酯系硬化劑可使用1種或2種以上。活性酯系硬化劑亦可使用日本特開2004-277460號公報中揭示之活性酯系硬化劑,另亦可使用市售者。市售之活性酯系硬化劑較好為含二環戊二烯型二酚縮合構造者、酚酚醛清漆之乙醯化物、酚酚醛清漆之苯甲醯化物等,其中更好為含二環戊二烯型二酚縮合構造者。具體而言,作為含二環戊二烯型二酚縮合構造者列舉為EXB9451、EXB9460、EXB9460S-65T、HPC-8000-65T」(DIC(股)製,活性基當量約223),作為酚酚醛清漆之乙醯化物列舉為DC808(三菱化學(股)製,活性基當 量約149),作為酚酚醛清漆之苯甲醯化物列舉為YLH1026(三菱化學(股)製,活性基當量約200)、YLH1030(三菱化學(股)製,活性基當量約201)、YLH1048(三菱化學(股)製,活性基當量約245)等,其中基於漆料之保存安定性、硬化物之熱膨脹率之觀點,以HPC-8000-65T較佳。 The active ester-based curing agent is preferably one or more reactive in one molecule, such as a general phenolic ester, a thiophenolic ester, an N-hydroxylamine ester, or an ester of a heterocyclic hydroxy compound. High ester group Compound. The active ester-based curing agent is preferably obtained by a condensation reaction of a carboxylic acid compound and/or a thiocarboxylic acid compound with a hydroxy compound and/or a thiol compound. Particularly, from the viewpoint of improving heat resistance, an active ester-based curing agent obtained from a carboxylic acid compound and a hydroxy compound is preferred, and an active ester-based curing agent obtained from a carboxylic acid compound and a phenol compound and/or a naphthol compound is more preferred. Agent. The carboxylic acid compound is exemplified by, for example, benzoic acid, acetic acid, succinic acid, maleic acid, itaconic acid, phthalic acid, isophthalic acid, terephthalic acid, pyromellitic acid and the like. Phenolic compounds or naphthol compounds are exemplified by, for example, hydroquinone, resorcinol, bisphenol A, bisphenol F, bisphenol S, phenolphthalein, methylated bisphenol A, methylated bisphenol F, methylated bisphenol S, phenol, o-cresol, m-cresol, p-cresol, catechol, α-naphthol, β-naphthol, 1,5-dihydroxynaphthalene, 1,6-dihydroxynaphthalene, 2 , 6-dihydroxynaphthalene, dihydroxybenzophenone, trihydroxybenzophenone, tetrahydroxybenzophenone, phloroglucin, benzenetriol, dicyclopentadiene diphenol compound (polycyclopentadiene type diphenol compound), phenol novolak, and the like. One or two or more kinds of the active ester-based curing agents can be used. As the active ester-based curing agent, an active ester-based curing agent disclosed in JP-A-2004-277460 may be used, and a commercially available one may also be used. The commercially available active ester-based curing agent is preferably a dicyclopentadiene-type diphenol condensation structure, an acetal of a phenol novolac, a benzamidine of a phenol novolac, and the like, and more preferably a dicyclopentane. Diene type diphenol condensation structure. Specifically, as a dicyclopentadiene-type diphenol condensation structure, it is exemplified as EXB9451, EXB9460, EXB9460S-65T, and HPC-8000-65T" (manufactured by DIC, having an active base equivalent of about 223) as a phenol novolac. The acetate of varnish is listed as DC808 (Mitsubishi Chemical Co., Ltd., active base) Approximately 149), the benzamidine compound as a phenol novolac is exemplified by YLH1026 (manufactured by Mitsubishi Chemical Corporation, active base equivalent of about 200), YLH1030 (manufactured by Mitsubishi Chemical Corporation, active base equivalent of about 201), and YLH1048 ( Mitsubishi Chemical Co., Ltd., active base equivalent of about 245), etc., based on the preservation stability of the paint and the thermal expansion rate of the cured product, HPC-8000-65T is preferred.

至於含二環戊二烯型二酚縮合構造之活性酯系硬化劑更具體列舉為下式之化合物。 The active ester-based curing agent containing a dicyclopentadiene-type diphenol condensation structure is more specifically listed as a compound of the following formula.

(式中,R為苯基、萘基,k表示0或1,n以重複單位之平均計為0.05~2.5)。 (wherein R is a phenyl group or a naphthyl group, k is 0 or 1, and n is 0.05 to 2.5 on the average of repeating units).

就降低介電正切、提高耐熱性之觀點而言,R較好為萘基,另一方面,k較好為0,且n較好為0.25~1.5。 From the viewpoint of lowering the dielectric tangent and improving the heat resistance, R is preferably a naphthyl group, and on the other hand, k is preferably 0, and n is preferably 0.25 to 1.5.

至於苯并噁嗪系硬化劑並無特別限制,具體例列舉為F-a、P-d(四國化成工業(股)製)、HFB2006M(昭和高分子(股)製)。 The benzoxazine-based curing agent is not particularly limited, and specific examples thereof include F-a, P-d (manufactured by Shikoku Chemicals Co., Ltd.), and HFB2006M (manufactured by Showa Polymer Co., Ltd.).

至於氰酸酯系硬化劑並無特別限制,列舉為例如酚醛清漆型(酚酚醛清漆型、烷基酚酚醛清漆型等)氰 酸酯系硬化劑、二環戊二烯型氰酸酯系硬化劑、雙酚型(雙酚A型、雙酚F型、雙酚S型等)氰酸酯系硬化劑、及該等經部分三嗪化之預聚物等。氰酸酯系硬化劑之重量平均分子量並無特別限制,較好為500~4500,更好為600~3000。氰酸酯系硬化劑之具體例舉例有例如雙酚A二氰酸酯、多酚氰酸酯(寡聚(3-亞甲基-1,5-伸苯基氰酸酯))、4,4'-亞甲基雙(2,6-二甲基苯基氰酸酯)、4,4’-亞乙基二苯基二氰酸酯、六氟雙酚A二氰酸酯、2,2-雙(4-氰酸酯基)苯基丙烷、1,1-雙(4-氰酸酯基苯基甲烷)、雙(4-氰酸酯基-3,5-二甲基苯基)甲烷、1,3-雙(4-氰酸酯基苯基-1-(甲基亞乙基))苯、雙(4-氰酸酯基苯基)硫醚、雙(4-氰酸酯基苯基)醚等之2官能氰酸酯樹脂,由酚酚醛清漆、甲酚酚醛清漆、含二環戊二烯構造之酚樹脂等衍生之多官能氰酸酯樹脂,該等氰酸酯樹脂一部分經三嗪化之預聚物等。該等可使用1種或組合2種以上使用。 The cyanate-based curing agent is not particularly limited, and examples thereof include a novolak type (phenol novolak type, alkylphenol novolak type, etc.) cyanide. An acid ester curing agent, a dicyclopentadiene type cyanate curing agent, a bisphenol type (bisphenol A type, bisphenol F type, bisphenol S type, etc.) cyanate type curing agent, and the like Partially triazineated prepolymers and the like. The weight average molecular weight of the cyanate-based curing agent is not particularly limited, but is preferably from 500 to 4,500, more preferably from 600 to 3,000. Specific examples of the cyanate-based curing agent are, for example, bisphenol A dicyanate, polyphenol cyanate (oligo(3-methylene-1,5-phenylene)), 4, 4'-methylenebis(2,6-dimethylphenyl cyanate), 4,4'-ethylenediphenyl dicyanate, hexafluorobisphenol A dicyanate, 2, 2-bis(4-cyanate)phenylpropane, 1,1-bis(4-cyanatephenylmethane), bis(4-cyanate-3,5-dimethylphenyl) Methane, 1,3-bis(4-cyanate phenyl-1-(methylethylidene))benzene, bis(4-cyanate phenyl) sulfide, bis(4-cyanate) a bifunctional cyanate resin such as an ester phenyl) ether, a polyfunctional cyanate resin derived from a phenol novolak, a cresol novolak, a phenol resin having a dicyclopentadiene structure, or the like, and the cyanate ester A part of the resin is subjected to a triazine-based prepolymer or the like. These may be used alone or in combination of two or more.

市售之氰酸酯樹脂列舉為以下式等表示之酚酚醛清漆型多官能氰酸酯樹脂(日本LONZA(股)製之PT30S、氰酸酯當量124)等 The commercially available cyanate resin is a phenol novolac type polyfunctional cyanate resin (PT30S, cyanate equivalent 124 manufactured by LONZA Co., Ltd.) represented by the following formula or the like.

[式中,n作為平均值,表示任意之數(較好為0~20)]。 [In the formula, n is an average value and represents an arbitrary number (preferably 0 to 20)].

以下式表示之雙酚A二氰酸酯之一部分或全部經三嗪化之三聚物之預聚物(日本LONZA(股)製之BA230、氰酸酯當量232), a prepolymer of a triazine-formed trimer which is a part or all of a bisphenol A dicyanate represented by the following formula (BA230, cyanate equivalent 232, manufactured by LONZA Co., Ltd., Japan)

以下式表示之含有二環戊二烯構造之氰酸酯樹脂(日本LONZA(股)製之DT-4000、DT-7000), The cyanate resin containing a dicyclopentadiene structure (DT-4000, DT-7000, manufactured by LONZA Co., Ltd.) is represented by the following formula.

(式中,n作為平均值,表示0~5之數)。 (where n is the average value, indicating the number of 0 to 5).

酸酐系硬化劑並無特別限制,列舉為例如鄰苯二甲酸酐、四氫鄰苯二甲酸酐、六氫鄰苯二甲酸酐、甲基四氫鄰苯二甲酸酐、甲基六氫鄰苯二甲酸酐、甲基納迪克酸(nadic acid)酐、氫化甲基納迪克酸酐、三烷基四氫鄰苯二甲酸酐、十二碳烯基琥珀酸酐、5-(2,5-二羧酸四氫-3-呋喃基)-3-甲基-3-環己烯-1,2-二羧酸酐、偏苯三酸酐、均苯四酸酐、二苯甲酮四羧酸酐、聯苯四羧酸二酐、萘四羧酸二酐、氧基二鄰苯二甲酸二酐、3,3’,4,4’-二苯基碸四羧酸二酐、1,3,3a,4,5,9b-六氫-5-(四氫-2,5-二氧代-3-呋喃基)-萘并[1,2-C]呋喃-1,3-二酮、乙二醇雙(偏苯三酸酐)、苯乙烯與馬來酸共聚合之苯乙烯.馬來酸樹脂等聚合物型酸酐等。 The acid anhydride-based curing agent is not particularly limited, and examples thereof include phthalic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, and methylhexahydroorthophenylene. Dicarboxylic anhydride, nadic acid anhydride, hydrogenated methyl nadic anhydride, trialkyltetrahydrophthalic anhydride, dodecenyl succinic anhydride, 5-(2,5-dicarboxylate Acid tetrahydro-3-furanyl)-3-methyl-3-cyclohexene-1,2-dicarboxylic anhydride, trimellitic anhydride, pyromellitic anhydride, benzophenone tetracarboxylic anhydride, biphenyltetracarboxylic acid Anhydride, naphthalene tetracarboxylic dianhydride, oxydiphthalic dianhydride, 3,3',4,4'-diphenylphosphonium tetracarboxylic dianhydride, 1,3,3a,4,5,9b - hexahydro-5-(tetrahydro-2,5-dioxo-3-furanyl)-naphtho[1,2-c]furan-1,3-dione, ethylene glycol bis(trimellitic anhydride), Styrene copolymerized with styrene and maleic acid. A polymer type acid anhydride such as a maleic acid resin.

熱硬化性樹脂組成物中,基於提高樹脂組成物之硬化物之機械強度或耐水性之觀點,(A)環氧樹脂之環氧基之合計數,與(B)硬化劑之反應基之合計數之比,較好為1:0.2~1:2,更好為1:0.3~1:1.5,又更好為1:0.4~1:1。又所謂樹脂組成物中存在之環氧樹脂之環氧基合計數係針對各環氧樹脂之固體成分質量除以環氧當量之值之所有環氧樹脂合計之值,所謂硬化劑之反應基之合計數係針對各硬化劑之固體成分質量除以反應基當量之值之所有硬化劑合計之值。 In the thermosetting resin composition, (A) the total number of epoxy groups of the epoxy resin and the total of the reactive groups of the (B) hardener are based on the viewpoint of improving the mechanical strength or water resistance of the cured product of the resin composition. The ratio of the number is preferably 1:0.2 to 1:2, more preferably 1:0.3 to 1:1.5, and even more preferably 1:0.4 to 1:1. The epoxy group count of the epoxy resin present in the resin composition is a total value of all the epoxy resins of the solid content of each epoxy resin divided by the epoxy equivalent value, and the reaction group of the hardener The total count is the sum of all the hardeners for which the solid content of each hardener is divided by the value of the reactive base equivalent.

上述樹脂組成物中,基於提高樹脂組成物之硬化物之機械強度或耐水性之觀點,將樹脂組成物中之不 揮發成分設為100質量%時,硬化劑之含量較好為3~30質量%,更好為5~25質量%,又更好為10~20質量%。 In the above resin composition, based on the viewpoint of improving the mechanical strength or water resistance of the cured product of the resin composition, the resin composition is not When the volatile component is 100% by mass, the content of the curing agent is preferably from 3 to 30% by mass, more preferably from 5 to 25% by mass, even more preferably from 10 to 20% by mass.

(無機填充材) (inorganic filler)

本發明之熱硬化性樹脂組成物基於降低熱膨脹率之觀點,較好含有無機填充材。使用之無機填充材並無特別限制,列舉為例如二氧化矽、氧化鋁、硫酸鋇、滑石、黏土、雲母粉、氫氧化鋁、氫氧化鎂、碳酸鈣、碳酸鎂、氧化鎂、氮化硼、硼酸鋁、鈦酸鋇、鈦酸鍶、鈦酸鈣、鈦酸鎂、鈦酸鉍、氧化鈦、鋯酸鋇、鋯酸鈣等。該等中以二氧化矽較佳。另外,以無定形二氧化矽、粉碎二氧化矽、熔融二氧化矽、結晶二氧化矽、合成二氧化矽、中空二氧化矽、球形二氧化矽、摻雜鈦之二氧化矽等之二氧化矽較佳。且二氧化矽較好為球狀者。球狀二氧化矽之例列舉為Admatechs(股)製之「SOC1」、「SOC2」。無機填充材可使用1種或組合2種以上使用。本發明中熱膨脹率之調整可藉由調整熱硬化性樹脂組成物中所含成分之種類、量而進行,但由於尤其是無機填充材大有助於熱硬化樹脂組成物之低熱膨脹化,故藉由調整無機填充材之種類、量,可較好地地進行熱膨脹率之調整。又摻雜鈦之二氧化矽在無機填充材中由於特別有低熱膨脹傾向,故在本發明中特別適用以調整熱膨脹率之值。 The thermosetting resin composition of the present invention preferably contains an inorganic filler based on the viewpoint of lowering the coefficient of thermal expansion. The inorganic filler to be used is not particularly limited and is exemplified by, for example, cerium oxide, aluminum oxide, barium sulfate, talc, clay, mica powder, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, magnesium oxide, boron nitride. , aluminum borate, barium titanate, barium titanate, calcium titanate, magnesium titanate, barium titanate, titanium oxide, barium zirconate, calcium zirconate and the like. Among these, cerium oxide is preferred. In addition, the oxidation of amorphous cerium oxide, pulverized cerium oxide, molten cerium oxide, crystalline cerium oxide, synthetic cerium oxide, hollow cerium oxide, spherical cerium oxide, titanium doped cerium oxide, and the like矽 is better. And the cerium oxide is preferably spherical. Examples of the spherical cerium oxide are "SOC1" and "SOC2" manufactured by Admatechs Co., Ltd. The inorganic filler may be used alone or in combination of two or more. In the present invention, the adjustment of the coefficient of thermal expansion can be carried out by adjusting the type and amount of the components contained in the thermosetting resin composition. However, since the inorganic filler particularly contributes to the low thermal expansion of the thermosetting resin composition, By adjusting the type and amount of the inorganic filler, the thermal expansion rate can be adjusted well. Further, the titanium-doped cerium oxide has a tendency to have a low thermal expansion in the inorganic filler, and is particularly suitable for adjusting the value of the coefficient of thermal expansion in the present invention.

所謂「摻雜鈦之二氧化矽」為例如使TiO2-SiO2玻璃之玻璃形成原料的TiCl4與SiCl4各自氣化後混 合,在氧氫火焰中加熱水解(火焰加熱水解)所得之TiO2-SiO2玻璃微粒子。摻雜鈦之二氧化矽為習知,作為市售品之例,列舉為旭硝子(股)製之「AZ Filler」。無機填充材中調配摻雜鈦之二氧化矽時,將樹脂組成物中所含無機填充材之量設為100質量%,無機填充材中摻雜鈦之二氧化矽調配量較好為10質量%以上,更好為20質量%以上,又更好為30質量%以上,再更好為40質量%以上,又更好50質量%以上,又再更好為60質量%以上,又更好為70質量%以上,再更好為80質量%以上,再更好為90質量%以上,最好為100質量%。 The "titanium-doped cerium oxide" is, for example, a mixture of TiCl 4 and SiCl 4 in which a glass forming raw material of TiO 2 -SiO 2 glass is vaporized, and is heated and hydrolyzed (flame-heated and hydrolyzed) in an oxyhydrogen flame. 2 - SiO 2 glass microparticles. Titanium dioxide doped with titanium is conventionally known as an example of a commercially available product, and is described as "AZ Filler" manufactured by Asahi Glass Co., Ltd. When the titanium-doped cerium oxide is blended in the inorganic filler, the amount of the inorganic filler contained in the resin composition is set to 100% by mass, and the amount of the cerium oxide doped with titanium in the inorganic filler is preferably 10% by mass. More than %, more preferably 20% by mass or more, more preferably 30% by mass or more, even more preferably 40% by mass or more, more preferably 50% by mass or more, and even more preferably 60% by mass or more, and more preferably It is 70% by mass or more, more preferably 80% by mass or more, still more preferably 90% by mass or more, and most preferably 100% by mass.

又,作為無機填充材,為了提高耐濕性、分散性,較好為以矽烷偶合劑(環氧基矽烷系偶合劑、胺基矽烷系偶合劑、巰基矽烷系偶合劑等)、鈦酸酯系偶合劑、矽氮烷化合物等表面處理劑進行表面處理者。該等可使用1種或組合2種以上使用。 Further, as the inorganic filler, in order to improve moisture resistance and dispersibility, a decane coupling agent (epoxy decane coupling agent, amino decane coupling agent, mercapto decane coupling agent, etc.) or titanate is preferably used. A surface treatment agent such as a coupling agent or a guanidinium compound is surface-treated. These may be used alone or in combination of two or more.

環氧基矽烷系偶合劑列舉為例如縮水甘油氧基丙基三甲氧基矽烷、縮水甘油氧基丙基三乙氧基矽烷、縮水甘油氧基丙基甲基二乙氧基矽烷、縮水甘油基丁基三甲氧基矽烷、(3,4-環氧基環己基)乙基三甲氧基矽烷等,至於胺基矽烷系偶合劑列舉為例如胺基丙基甲氧基矽烷、胺基丙基三乙氧基矽烷、N-苯基-3-胺基丙基三甲氧基矽烷、N-2-(胺基乙基)胺基丙基三甲氧基矽烷等。巰基矽烷系偶合劑列舉為例如巰基丙基三甲氧基矽烷、巰基丙基三乙氧基矽烷等。該等可使用1種或組合2種以上使用。市 售之偶合劑列舉為例如信越化學工業(股)製之「KBM403」(3-縮水甘油氧基丙基三甲氧基矽烷)、信越化學工業(股)製之「KBM803」(3-巰基丙基三甲氧基矽烷)、信越化學工業(股)製之「KBE903」(3-胺基丙基三乙氧基矽烷)、信越化學工業(股)製之「KBM573」(N-苯基-3-胺基丙基三甲氧基矽烷)等。 The epoxy decane coupling agent is exemplified by, for example, glycidoxypropyltrimethoxydecane, glycidoxypropyltriethoxydecane, glycidoxypropylmethyldiethoxydecane, glycidyl group. Butyl trimethoxy decane, (3,4-epoxycyclohexyl)ethyltrimethoxy decane, etc., and the amino decane coupling agent is exemplified by, for example, an aminopropyl methoxy decane, an aminopropyl hydride Ethoxy decane, N-phenyl-3-aminopropyltrimethoxydecane, N-2-(aminoethyl)aminopropyltrimethoxydecane, and the like. The mercapto decane coupling agent is exemplified by, for example, mercaptopropyltrimethoxydecane, mercaptopropyltriethoxydecane, and the like. These may be used alone or in combination of two or more. city For example, "KBM403" (3-glycidoxypropyltrimethoxydecane) manufactured by Shin-Etsu Chemical Co., Ltd., "KBM803" (3-mercaptopropyl) manufactured by Shin-Etsu Chemical Co., Ltd. "KBE903" (3-aminopropyltriethoxydecane) manufactured by Shin-Etsu Chemical Co., Ltd., "KBM573" manufactured by Shin-Etsu Chemical Co., Ltd. (N-phenyl-3-) Aminopropyltrimethoxydecane) and the like.

無機填充材之平均粒徑並無特別限制,但無機填充材之平均粒徑上限值,基於絕緣層上進行微細配線形成之觀點,較好為5μm以下,更好為3μm以下,又更好為1μm以下,再更好為0.7μm以下,又再更好為0.5μm以下,最好為0.4μm以下,又最好為0.3μm以下。另一方面,無機填充材之平均粒徑之下限值,在將環氧樹脂組成物作成樹脂組成物漆料時,基於防止漆料黏度上升、操作性降低之觀點,較好為0.01μm以上,更好為0.03μm以上,又更好為0.05μm以上,再更好為0.07μm以上,最好為0.1μm以上。上述無機填充材之平均粒徑可基於Mie散射理論,藉由雷射繞射.散射法測定。具體而言,可藉由雷射繞射散射式粒度分佈測定裝置,以體積基準作成無機填充材之粒度分佈,以其中值直徑作為平均粒徑而測定。測定樣品可較好地使用以超音波將無機填充材分散於水中者。雷射繞射散射式粒度分佈測定裝置可使用堀場製作所股份有限公司製之LA-500、750、950等。 The average particle diameter of the inorganic filler is not particularly limited, but the upper limit of the average particle diameter of the inorganic filler is preferably 5 μm or less, more preferably 3 μm or less, and more preferably from the viewpoint of forming fine wiring on the insulating layer. It is 1 μm or less, more preferably 0.7 μm or less, still more preferably 0.5 μm or less, more preferably 0.4 μm or less, and still more preferably 0.3 μm or less. On the other hand, when the epoxy resin composition is used as a resin composition paint, the lower limit of the average particle diameter of the inorganic filler is preferably 0.01 μm or more from the viewpoint of preventing the viscosity of the paint from rising and the workability from being lowered. More preferably, it is 0.03 μm or more, more preferably 0.05 μm or more, still more preferably 0.07 μm or more, and most preferably 0.1 μm or more. The average particle size of the above inorganic filler can be based on the Mie scattering theory, by laser diffraction. Determined by scattering method. Specifically, the particle size distribution of the inorganic filler can be determined on a volume basis by a laser diffraction scattering type particle size distribution measuring apparatus, and the median diameter can be measured as an average particle diameter. The measurement sample can be preferably used in which the inorganic filler is dispersed in water by ultrasonic waves. The laser diffraction scattering type particle size distribution measuring apparatus can use LA-500, 750, 950, etc., manufactured by Horiba, Ltd.

調配無機填充材時之含量,基於降低熱膨脹率之觀點,將樹脂組成物中之不揮發成分設為100質量% 時,較好為40質量%以上,更好為50質量%以上,又更好為60質量%。無機填充材之含量太少時,有硬化物之熱膨脹率變高之傾向。無機填充材之含量過大時有硬化物變脆之傾向或剝離強度降低之傾向,故無機填充材之最大含量較好為90質量%以下,更好為85質量%以下。 When the content of the inorganic filler is adjusted, the nonvolatile content in the resin composition is set to 100% by mass based on the viewpoint of lowering the coefficient of thermal expansion. The amount is preferably 40% by mass or more, more preferably 50% by mass or more, and still more preferably 60% by mass. When the content of the inorganic filler is too small, the thermal expansion coefficient of the cured product tends to be high. When the content of the inorganic filler is too large, the cured product tends to become brittle or the peel strength tends to decrease. Therefore, the maximum content of the inorganic filler is preferably 90% by mass or less, more preferably 85% by mass or less.

本發明之樹脂組成物中可進一步調配其他成分(例如,熱可塑性樹脂、硬化促進劑、難燃劑等添加劑)。 Further, other components (for example, additives such as a thermoplastic resin, a hardening accelerator, and a flame retardant) may be further formulated in the resin composition of the present invention.

-熱可塑性樹脂- - Thermoplastic Resin -

熱可塑性樹脂列舉為例如苯氧樹脂、聚乙烯乙縮醛樹脂、聚醯亞胺樹脂、聚醯胺醯亞胺樹脂、聚醚碸樹脂、及聚碸樹脂等。熱可塑性樹脂可單獨使用1種,或亦可併用2種以上。 The thermoplastic resin is exemplified by, for example, a phenoxy resin, a polyvinyl acetal resin, a polyimide resin, a polyamidoximine resin, a polyether oxime resin, and a polyfluorene resin. The thermoplastic resin may be used singly or in combination of two or more.

熱可塑性樹脂之聚苯乙烯換算之重量平均分子量較好為8,000~70,000之範圍,更好為10,000~60,000之範圍,又更好為20,000~60,000之範圍。熱可塑性樹脂之聚苯乙烯換算之重量平均分子量係以凝膠滲透層析(GPC)法測定。具體而言,熱可塑性樹脂之聚苯乙烯換算之重量平均分子量可使用島津製作所(股)製之LC-9A/RID-6A作為測定裝置,使用昭和電工(股)製之Shodex K-800P/K-804L/K-804L作為管柱,使用氯仿作為移動相,以管柱溫度40℃進行測定,且使用標準聚苯乙烯之校正線算出。 The polystyrene-equivalent weight average molecular weight of the thermoplastic resin is preferably in the range of 8,000 to 70,000, more preferably in the range of 10,000 to 60,000, still more preferably in the range of 20,000 to 60,000. The polystyrene-equivalent weight average molecular weight of the thermoplastic resin is measured by a gel permeation chromatography (GPC) method. Specifically, the weight average molecular weight of the thermoplastic resin in terms of polystyrene is LC-9A/RID-6A manufactured by Shimadzu Corporation, and the Shodex K-800P/K manufactured by Showa Denko Co., Ltd. is used. -804L/K-804L was used as a column, and chloroform was used as a mobile phase, and the column temperature was measured at 40 ° C, and was calculated using a calibration line of standard polystyrene.

至於苯氧樹脂列舉為例如具有由雙酚A骨架、雙酚F骨架、雙酚S骨架、雙酚苯乙酮骨架、酚醛清漆骨架、聯苯骨架、茀骨架、二環戊二烯骨架、降冰片烯骨架、萘骨架、蒽骨架、金剛烷骨架、萜烯骨架、及三甲基環己烷骨架所組成群組選出之1種以上之骨架的苯氧樹脂。苯氧樹脂之末端可為酚性羥基、環氧基等之任一官能基。苯氧樹脂可單獨使用1種,或亦可併用2種以上。苯氧樹脂之具體例列舉為三菱化學(股)製之「1256」及「4250」(均為含雙酚A骨架之苯氧樹脂)、「YX8100」(含雙酚S骨架之苯氧樹脂)、及「YX6954」(含雙酚苯乙酮骨架之苯氧樹脂),此外列舉為東都化成(股)製之「FX280」及「FX293」、三菱化學(股)製之「YL7553」、「YL6794」、「YL7213」、「YL7290」及「YL7482」等。 The phenoxy resin is exemplified by, for example, having a bisphenol A skeleton, a bisphenol F skeleton, a bisphenol S skeleton, a bisphenol acetophenone skeleton, a novolak skeleton, a biphenyl skeleton, an anthracene skeleton, a dicyclopentadiene skeleton, and a descending A phenoxy resin having one or more kinds of skeletons selected from the group consisting of a borneol skeleton, a naphthalene skeleton, an anthracene skeleton, an adamantane skeleton, a terpene skeleton, and a trimethylcyclohexane skeleton. The terminal of the phenoxy resin may be any one of a phenolic hydroxyl group, an epoxy group and the like. The phenoxy resin may be used singly or in combination of two or more. Specific examples of the phenoxy resin are "1256" and "4250" (all are phenoxy resins containing a bisphenol A skeleton) and "YX8100" (phenoxy resin containing a bisphenol S skeleton) manufactured by Mitsubishi Chemical Corporation. And "YX6954" (phenoxy resin containing bisphenol acetophenone skeleton), including "FX280" and "FX293" manufactured by Dongdu Chemical Co., Ltd., "YL7553" and "YL6794" manufactured by Mitsubishi Chemical Corporation. ", YL7213", "YL7290" and "YL7482".

聚乙烯乙縮醛樹脂之具體例列舉為電化學工業(股)製之電化丁醛4000-2、5000-A、6000-C、6000-EP,積水化學工業(股)製之S-LEC BH系列、BX系列、KS系列、BL系列、BM系列等。 Specific examples of the polyethylene acetal resin are electro-chemical butyraldehyde 4000-2, 5000-A, 6000-C, 6000-EP manufactured by Electrochemical Industry Co., Ltd., S-LEC BH manufactured by Sekisui Chemical Industry Co., Ltd. Series, BX series, KS series, BL series, BM series, etc.

聚醯亞胺樹脂之具體例列舉為新日本理化(股)製之「RIKACOAT SN20」及「RIKACOAT PN20」。聚醯亞胺樹脂之具體例又列舉為使2官能性羥基末端聚丁二烯、二異氰酸酯化合物及四元酸酐反應獲得之線狀聚醯亞胺(日本特開2006-37083號公報記載者)、含聚矽氧烷骨架之聚醯亞胺(日本特開2002-12667號公報及日本特開 2000-319386號公報等所記載者)等之改質聚醯亞胺。 Specific examples of the polyimine resin are "RIKACOAT SN20" and "RIKACOAT PN20" manufactured by Nippon Chemical and Chemical Co., Ltd. Specific examples of the polyimine resin include a linear polyimine obtained by reacting a bifunctional hydroxyl-terminated polybutadiene, a diisocyanate compound, and a tetrabasic acid anhydride (Japanese Patent Laid-Open Publication No. Hei. No. 2006-37083) Polyimine containing a polyoxyalkylene skeleton (Japanese Patent Laid-Open Publication No. 2002-12667 and Japanese Patent Laid-Open The poly-imine is modified such as those described in JP-A-2000-319386.

聚醯胺醯亞胺樹脂之具體例列舉為東洋紡績(股)製之「VYLOMAX HR11NN」及「VYLOMAX HR16NN」。聚醯胺醯亞胺樹脂之具體例另列舉為日立化成工業(股)製之含有聚矽氧烷骨架之聚醯胺醯亞胺「KS9100」、「KS9300」等之改質聚醯胺醯亞胺。 Specific examples of the polyamidoximine resin are "VYLOMAX HR11NN" and "VYLOMAX HR16NN" manufactured by Toyobo Co., Ltd. Specific examples of the polyamidoximine resin are modified polyamines such as polyacrylamide skeletons "KS9100" and "KS9300" manufactured by Hitachi Chemical Co., Ltd. amine.

聚醚碸樹脂之具體例列舉為住友化學(股)製之「PES5003P」等。 Specific examples of the polyether oxime resin are "PES5003P" manufactured by Sumitomo Chemical Co., Ltd., and the like.

聚碸樹脂之具體例列舉為Solvay Advanced Polymers(股)製之聚碸「P1700」、「P3500」等。 Specific examples of the polyanthracene resin are those of the "P1700" and "P3500" manufactured by Solvay Advanced Polymers Co., Ltd.

將樹脂組成物中之不揮發成分之含量設為100%時,樹脂組成物中之熱可塑性樹脂之含量較好為0.1質量%~20質量%。藉由使熱可塑性樹脂之含量成為該範圍,可使樹脂組成物之黏度適度,可形成厚度或塊性狀之均一樹脂組成物。將樹脂組成物中之不揮發成分之含量設為100%時,樹脂組成物中之熱可塑性樹脂含量更好為1質量%~10質量%。 When the content of the nonvolatile component in the resin composition is 100%, the content of the thermoplastic resin in the resin composition is preferably from 0.1% by mass to 20% by mass. By setting the content of the thermoplastic resin to such a range, the viscosity of the resin composition can be made moderate, and a uniform resin composition having a thickness or a bulk property can be formed. When the content of the nonvolatile component in the resin composition is 100%, the content of the thermoplastic resin in the resin composition is more preferably from 1% by mass to 10% by mass.

-硬化促進劑- - hardening accelerator -

作為硬化促進劑,列舉為例如磷系硬化促進劑、胺系硬化促進劑、咪唑系硬化促進劑、胍系硬化促進劑、金屬系硬化促進劑等,較好為胺系硬化促進劑、咪唑系硬化促進劑、金屬系硬化促進劑。 Examples of the curing accelerator include a phosphorus-based curing accelerator, an amine-based curing accelerator, an imidazole-based curing accelerator, an lanthanum-based curing accelerator, and a metal-based curing accelerator, and are preferably an amine-based curing accelerator or an imidazole-based accelerator. A hardening accelerator and a metal-based hardening accelerator.

磷系硬化促進劑列舉為例如三苯膦、硼酸鏻 化合物、四苯基鏻四苯基硼酸鹽、正丁基鏻四苯基硼酸鹽、四丁基鏻癸酸鹽、(4-甲基苯基)三苯基鏻硫代氰酸鹽、四苯基鏻硫代氰酸鹽、丁基三苯基鏻硫代氰酸鹽等,較好為三苯膦、四丁基鏻癸酸鹽。 Phosphorus-based hardening accelerators are exemplified by, for example, triphenylphosphine and barium borate. Compound, tetraphenylphosphonium tetraphenylborate, n-butylphosphonium tetraphenylborate, tetrabutylphosphonate, (4-methylphenyl)triphenylphosphonium thiocyanate, tetraphenyl The thiocyanate, butyltriphenylphosphonium thiocyanate or the like is preferably triphenylphosphine or tetrabutylphosphonate.

胺系硬化促進劑列舉為例如三乙胺、三丁胺等之三烷胺,4-二甲胺基吡啶、苄基二甲胺、2,4,6-參(二甲胺基甲基)苯酚、1,8-二氮雜雙環[5.4.0]-十一碳烯等,較好為4-二甲胺基吡啶、1,8-二氮雜雙環[5.4.0]-十一碳烯。 The amine-based hardening accelerator is exemplified by a trialkylamine such as triethylamine or tributylamine, 4-dimethylaminopyridine, benzyldimethylamine, and 2,4,6-gin(dimethylaminomethyl). Phenol, 1,8-diazabicyclo[5.4.0]-undecene, etc., preferably 4-dimethylaminopyridine, 1,8-diazabicyclo[5.4.0]-undecylene Alkene.

咪唑系硬化促進劑列舉為例如2-甲基咪唑、2-十一烷基咪唑、2-十七烷基咪唑、1,2-二甲基咪唑、2-乙基-4-甲基咪唑、1,2-二甲基咪唑、2-乙基-4-甲基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑、1-苄基-2-甲基咪唑、1-苄基-2-苯基咪唑、1-氰乙基-2-甲基咪唑、1-氰乙基-2-十一烷基咪唑、1-氰乙基-2-乙基-4-甲基咪唑、1-氰乙基-2-苯基咪唑、1-氰乙基-2-十一烷基咪唑鎓偏苯三酸鹽、1-氰乙基-2-苯基咪唑鎓偏苯三酸鹽、2,4-二胺基-6-[2’-甲基咪唑基-(1’)]-乙基-s-三嗪、2,4-二胺基-6-[2’-十一烷基咪唑基-(1’)]-乙基-s-三嗪、2,4-二胺基-6-[2'-乙基-4'-甲基咪唑基-(1')]-乙基-s-三嗪、2,4-二胺基-6-[2’-甲基咪唑基-(1’)]-乙基-s-三嗪異氰尿酸加成物、2-苯基咪唑異氰尿酸加成物、2-苯基-4,5-二羥基甲基咪唑、2-苯基-4-甲基-5-羥基甲基咪唑、2,3-二氫-1H-吡咯并[1,2-a]苯并咪唑、1-十二烷基-2-甲基-3-苄基咪唑鎓氯化物、2-甲基咪唑啉、2-苯基咪唑 啉等咪唑化合物及咪唑化合物與環氧樹脂之加成物,較好為2-乙基-4-甲基咪唑、1-苄基-2-苯基咪唑。 The imidazole-based hardening accelerator is exemplified by, for example, 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1- Benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-ethyl-4-methyl Imidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazolium trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitic acid Salt, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-ten Monoalkylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')] -ethyl-s-triazine, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine isocyanuric acid adduct, 2- Phenyl imidazoisocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2,3-dihydro-1H -pyrrolo[1,2-a]benzimidazole, 1-dodecyl-2-methyl-3- Benzyl imidazolium chloride, 2-methylimidazoline, 2-phenylimidazole An imidazole compound such as a porphyrin and an adduct of an imidazole compound and an epoxy resin are preferably 2-ethyl-4-methylimidazole or 1-benzyl-2-phenylimidazole.

胍系硬化促進劑列舉為例如二氰二醯胺、1-甲基胍、1-乙基胍、1-環己基胍、1-苯基胍、1-(鄰-甲苯基)胍、二甲基胍、二苯基胍、三甲基胍、四甲基胍、五甲基胍、1,5,7-三氮雜雙環[4.4.0]癸-5-烯、7-甲基-1,5,7-三氮雜雙環[4.4.0]癸-5-烯、1-甲基雙胍、1-乙基雙胍、1-正丁基雙胍、1-正十八烷基雙胍、1,1-二甲基雙胍、1,1-二乙基雙胍、1-環己基雙胍、1-烯丙基雙胍、1-苯基雙胍、1-(鄰-甲苯基)雙胍等,較好為二氰二醯胺、1,5,7-三氮雜雙環[4.4.0]癸-5-烯。 The lanthanide hardening accelerator is exemplified by, for example, dicyandiamide, 1-methyl hydrazine, 1-ethyl hydrazine, 1-cyclohexyl hydrazine, 1-phenyl fluorene, 1-(o-tolyl) fluorene, and dimethyl Base, diphenyl hydrazine, trimethyl hydrazine, tetramethyl hydrazine, pentamethyl hydrazine, 1,5,7-triazabicyclo[4.4.0]non-5-ene, 7-methyl-1 ,5,7-triazabicyclo[4.4.0]non-5-ene, 1-methylbiguanide, 1-ethylbiguanide, 1-n-butylbiguanide, 1-n-octadecylbiguanide, 1, 1-dimethylbiguanide, 1,1-diethylbiguanide, 1-cyclohexylbiguanide, 1-allyl biguanide, 1-phenylbiguanide, 1-(o-tolyl)biguanide, etc., preferably two Cyanamide, 1,5,7-triazabicyclo[4.4.0]non-5-ene.

金屬系硬化促進劑並無特別限制,列舉為例如鈷、銅、鋅、鐵、鎳、錳、錫等之金屬之有機金屬錯合物或有機金屬鹽。有機金屬錯合物之具體例列舉為乙醯基丙酮酸鈷(II)、乙醯基丙酮酸鈷(III)等有機鈷錯合物、乙醯基丙酮酸銅(II)等之有機銅錯合物、乙醯基丙酮酸鋅(II)等有機鋅錯合物、乙醯基丙酮酸鐵(III)等有機鐵錯合物、乙醯基丙酮酸鎳(II)等有機鎳錯合物、乙醯基丙酮酸錳(II)等有機錳錯合物等。有機金屬鹽列舉為辛酸鋅、辛酸錫、環烷酸鋅(zinc naphthenate)、環烷酸鈷、硬脂酸錫、硬脂酸鋅等。該等可使用1種或亦可組合2種以上使用。 The metal-based hardening accelerator is not particularly limited, and examples thereof include organometallic complexes or organic metal salts of metals such as cobalt, copper, zinc, iron, nickel, manganese, and tin. Specific examples of the organometallic complex are organic cobalt complexes such as cobalt (II) acetylacetonate, cobalt (III) acetylate, and copper (II) acetylacetate. Organic zinc complex such as zinc acetyl phthalate (II), organic iron complex such as iron (III) acetylate pyruvate, and organic nickel complex such as nickel (II) acetyl phthalate An organic manganese complex such as manganese (II) acetate. The organic metal salt is exemplified by zinc octoate, tin octylate, zinc naphthenate, cobalt naphthenate, tin stearate, zinc stearate and the like. These may be used alone or in combination of two or more.

本發明之樹脂組成物中,金屬系硬化促進劑較好使用有機鈷錯合物,最好使用乙醯基丙酮酸鈷(III)。金屬系硬化促進劑之含量以樹脂組成物中不揮發成分作為 100質量%時,基於金屬系硬化觸媒之金屬含量較好為25ppm~500ppm之範圍,更好為30ppm~200ppm之範圍。 In the resin composition of the present invention, an organo-cobalt accelerator is preferably used as the metal-based hardening accelerator, and cobalt(III) acetylacetate is preferably used. The content of the metal-based hardening accelerator is as a non-volatile component in the resin composition When 100% by mass, the metal content based on the metal-based curing catalyst is preferably in the range of 25 ppm to 500 ppm, more preferably in the range of 30 ppm to 200 ppm.

硬化促進劑可單獨使用1種,亦可組合2種以上使用。樹脂組成物中之硬化促進劑含量,以樹脂組成物中之不揮發成分作為100質量%時,較好為0.01質量%~1質量%,更好為0.02質量%~0.5質量%,又更好為0.03質量%~0.1質量%。 The curing accelerator may be used singly or in combination of two or more. When the content of the hardening accelerator in the resin composition is 100% by mass based on the nonvolatile content in the resin composition, it is preferably 0.01% by mass to 1% by mass, more preferably 0.02% by mass to 0.5% by mass, and more preferably It is 0.03 mass% to 0.1 mass%.

-難燃劑- - Flame retardant -

難燃劑列舉為例如有機磷系難燃劑、有機系含氮磷化合物、氮化合物、聚矽氧系難燃劑、金屬氫氧化物等。較好為10-(2,5-二羥基苯基)-10-氫-9-氧雜-10-磷雜菲-10-氧化物(例如,三光(股)製之「HCA-HQ」)。難燃劑可單獨使用1種,或亦可併用2種以上。樹脂組成物層中之難燃劑之含量並無特別限制,但將樹脂組成物中之不揮發成分設為100質量%時,較好為0.5質量%~10質量%,更好為1質量%~5質量%,又更好為1.5質量%~3質量%。 The flame retardant is exemplified by, for example, an organic phosphorus-based flame retardant, an organic nitrogen-containing phosphorus compound, a nitrogen compound, a polyoxygenated flame retardant, a metal hydroxide, or the like. It is preferably 10-(2,5-dihydroxyphenyl)-10-hydro-9-oxa-10-phosphaphenanthrene-10-oxide (for example, "HCA-HQ" manufactured by Sanguang Co., Ltd.) . The flame retardant may be used singly or in combination of two or more. The content of the flame retardant in the resin composition layer is not particularly limited. However, when the nonvolatile content in the resin composition is 100% by mass, it is preferably 0.5% by mass to 10% by mass, more preferably 1% by mass. ~5 mass%, and more preferably 1.5 mass% to 3% mass%.

〈回焊步驟〉 <Reflow step>

本發明之製造方法包含回焊步驟,回焊步驟係藉由回焊將零件安裝於利用上述熱硬化步驟製造之具有硬化物層之基板上。 The manufacturing method of the present invention includes a reflow step of mounting the component on the substrate having the cured layer produced by the above-described thermosetting step by reflow soldering.

安裝之零件並無特別限制,列舉為例如半導體、中介片、被動元件等,但本發明之製造方法可特別較好地用於 半導體之安裝。 The mounted components are not particularly limited and are exemplified by, for example, a semiconductor, an interposer, a passive component, etc., but the manufacturing method of the present invention can be particularly preferably used. Semiconductor installation.

回焊步驟中之加熱溫度可能隨使用之焊料種類或安裝之零件種類等之條件而異,但一般為210℃~330℃,較好為220℃~300℃,更好為230℃~280℃。本發明之製造方法更適於使用無鉛焊料作為焊料之情況。 The heating temperature in the reflow step may vary depending on the type of solder used or the type of parts to be mounted, but is generally 210 ° C to 330 ° C, preferably 220 ° C to 300 ° C, more preferably 230 ° C to 280 ° C. . The manufacturing method of the present invention is more suitable for the case where lead-free solder is used as the solder.

本發明之製造方法包含上述熱硬化步驟及上述回焊步驟。 The manufacturing method of the present invention comprises the above-described heat hardening step and the above-described reflow step.

本發明之零件安裝基板之製造方法之特徵係熱硬化性樹脂組成物層之熱硬化步驟後之x-y方向之收縮率(S1)相較於熱硬化步驟前之熱硬化性樹脂組成物層,為0.35%以下,較好為0.3%以下,更好為0.2%以下,回焊步驟後之硬化物層之x-y方向之收縮率(S2)相較於熱硬化步驟前之熱硬化性樹脂組成物層,為0.4%以下,較好為0.3%以下,更好為0.2%以下,且S1與S2滿足S2-S1≦0.08,較好S2-S1≦0.05,更好S2-S1≦0.04之關係。 The method for producing a component mounting substrate of the present invention is characterized in that the shrinkage ratio (S1) in the xy direction after the thermosetting step of the thermosetting resin composition layer is higher than that of the thermosetting resin composition layer before the thermosetting step. 0.35% or less, preferably 0.3% or less, more preferably 0.2% or less, the shrinkage ratio (S2) of the cured layer after the reflow step is higher than that of the thermosetting resin composition before the thermosetting step It is 0.4% or less, preferably 0.3% or less, more preferably 0.2% or less, and S1 and S2 satisfy the relationship of S2-S1 ≦ 0.08, preferably S2-S1 ≦ 0.05, more preferably S2-S1 ≦ 0.04.

上述S1及S2之測定係如下般進行。 The measurement of the above S1 and S2 was carried out as follows.

〈S1之測定〉 <Measurement of S1>

(1-1)初期長度之測定 (1-1) Determination of initial length

利用沖壓而於熱硬化性樹脂組成物層(厚度40μm)之200mm方形樹脂之距離4角20mm左右之部分形成貫穿孔(孔依順時針方向暫稱為A、B、C、D),且以非接觸型圖像測定器測定所形成之各孔之中央間之長度L(LAB、LBC、LCD、LDA、LAC、LBD)(參照圖1)。 A through hole is formed in a portion of a 200 mm square resin having a thermosetting resin composition layer (thickness: 40 μm) at a distance of about 4 mm from a punch (the hole is temporarily referred to as A, B, C, and D in a clockwise direction), and is non-contacted. The image measuring device measures the length L (L AB , L BC , L CD , L DA , L AC , L BD ) between the centers of the formed holes (see Fig. 1).

(1-2)熱硬化性樹脂組成物層之熱硬化 (1-2) Thermal hardening of the thermosetting resin composition layer

對測定長度結束之熱硬化性樹脂組成物層加熱,使之熱硬化。 The thermosetting resin composition layer having the measured length is heated to be thermally cured.

(1-3)熱硬化收縮率之測定 (1-3) Determination of thermosetting shrinkage rate

熱硬化後,於已硬化之熱可塑性樹脂組成物層中,以與L相同之方式以非接觸型圖像測定器測定(1-1)中形成之各孔之中央間之硬化後之長度L’(L’AB、L’BC、L’CD、L’DA、L’AC、L’BD)。且算出 s1AB=(LAB-L’AB)/LAB After heat curing, in the cured thermoplastic resin composition layer, the length L between the centers of the respective holes formed in (1-1) is measured by a non-contact type image measuring device in the same manner as L. '(L' AB , L' BC , L' CD , L' DA , L' AC , L' BD ). And calculate s1 AB = (L AB -L' AB ) / L AB

同樣地,針對LBC與L'BC、LCD與L’CD、LDA與L’DA、LAC與L’AC、LBD與L’BD算出s1BC、s1CD、s1DA、s1AC、s1DASimilarly, s1 BC , s1 CD , s1 DA , s1 AC are calculated for L BC and L' BC , L CD and L' CD , L DA and L' DA , L AC and L' AC , L BD and L' BD . , s1 DA .

以下式算出熱硬化收縮率。 The heat curing shrinkage ratio was calculated by the following formula.

熱硬化收縮率[x-y方向之收縮率:S1](%)={(s1AB+s1BC+s1CD+s1DA+s1AC+s1DA)/6}×100 Thermal hardening shrinkage [shrinkage in xy direction: S1] (%) = {(s1 AB + s1 BC + s1 CD + s1 DA + s1 AC + s1 DA ) / 6} × 100

〈S2之測定〉 <Measurement of S2>

(1-4)回焊步驟 (1-4) Reflow step

使完成(1-3)步驟之基材進行回焊。 The substrate of the completion step (1-3) is reflowed.

(1-5)回焊收縮率之測定 (1-5) Determination of reflow shrinkage

回焊步驟後,與(1-3)完全相同,以與L相同之方式以非接觸型圖像測定器測定(1-1)中形成之各孔之中央間之回焊後之長度L”(L”AB、L”BC、L”CD、L”DA、L”AC、L”BD)。且算出s2AB=(LAB-L”AB)/LAB After the reflow step, exactly the same as (1-3), the length L after reflow between the centers of the respective holes formed in (1-1) is measured by a non-contact type image measuring device in the same manner as L. (L" AB , L" BC , L " CD , L " DA , L " AC , L " BD ) and calculate s2 AB = (L AB - L" AB ) / L AB

同樣地,針對LBC與L”BC、LCD與L”CD、LDA與L”DA、LAC與L”AC、LBD與L”BD算出s2BC、s2CD、s2DA、s2AC、s2DASimilarly, s2 BC , s2 CD , s2 DA , s2 AC are calculated for L BC and L BC , L CD and L ” CD , L DA and L ” DA , L AC and L” AC , L BD and L” BD . , s2 DA .

以下式算出回焊收縮率。 The reflow shrinkage ratio is calculated by the following formula.

回焊收縮率[x-y方向之收縮率:S2](%)={(s2AB+s2BC+s2CD+s2DA+s2AC+s2DA)/6}×100 Reflow shrinkage rate [ shrinkage rate in xy direction: S2] (%) = {(s2 AB + s2 BC + s2 CD + s2 DA + s2 AC + s2 DA ) / 6} × 100

上述參數較好可藉由使用先前記載之含有環氧樹脂、硬化劑及無機填充材之熱硬化性樹脂組成物而滿足。依據該熱硬化性樹脂組成物,可抑制絕緣層之收縮且抑制翹曲,可獲得適於不易產生基板變形之絕緣層之硬化物。該熱硬化性樹脂組成物之硬化物適於零件安裝基板(尤其半導體安裝基板)之製造,尤其適於形成基板之絕緣層。一硬化物層(一絕緣層)之厚度通常為3~200μm左右,但多層化時,絕緣層整體之厚度係比其厚,通常為10~300μm左右。 The above parameters are preferably satisfied by using a thermosetting resin composition containing an epoxy resin, a curing agent, and an inorganic filler as described above. According to the thermosetting resin composition, shrinkage of the insulating layer can be suppressed and warpage can be suppressed, and a cured product suitable for an insulating layer which is less likely to cause deformation of the substrate can be obtained. The cured product of the thermosetting resin composition is suitable for the manufacture of a component mounting substrate (particularly a semiconductor mounting substrate), and is particularly suitable for forming an insulating layer of a substrate. The thickness of a cured layer (an insulating layer) is usually about 3 to 200 μm. However, when the multilayer is formed, the thickness of the entire insulating layer is thicker than usual, and is usually about 10 to 300 μm.

〈熱硬化性樹脂組成物〉 <thermosetting resin composition>

本發明之一實施形態係提供用於形成絕緣層之熱硬化性樹脂組成物。 An embodiment of the present invention provides a thermosetting resin composition for forming an insulating layer.

上述熱硬化性樹脂組成物於以使熱硬化後之x-y方向之收縮率(S1)成為0.35%以下之條件熱硬化之該熱硬化性樹脂組成物之硬化物,依據IPC/JEDEC J-STD-020C,以回焊溫度分佈加熱後之x-y方向之收縮率(S2)為0.4%以下,且S1與S2滿足S2-S1≦0.08之關係。 The cured product of the thermosetting resin composition which is thermally cured under the condition that the shrinkage ratio (S1) in the xy direction after thermosetting is 0.35% or less is based on IPC/JEDEC J-STD- In 020C, the shrinkage ratio (S2) in the xy direction after heating by the reflow temperature distribution is 0.4% or less, and S1 and S2 satisfy the relationship of S2-S1 ≦ 0.08.

若以使熱硬化後之x-y方向之收縮率(S1)成為0.35%以下之條件熱硬化之該熱硬化性樹脂組成物之硬化物,依據IPC/JEDEC J-STD-020C,以回焊溫度分佈加熱後之x-y方向之收縮率(S2)為0.4%以下,且S1與S2滿足S2-S1≦0.08之關係,則該熱可塑性樹脂組成物即使經歷利用回焊步驟之零件安裝之高溫後,亦不易產生基板之翹曲,而為適於薄型之零件安裝基板之絕緣層形成者。 The cured product of the thermosetting resin composition which is thermally cured under the condition that the shrinkage ratio (S1) in the xy direction after thermosetting is 0.35% or less is based on IPC/JEDEC J-STD-020C, and the reflow temperature distribution is used. After the heating, the shrinkage ratio (S2) in the xy direction is 0.4% or less, and S1 and S2 satisfy the relationship of S2-S1 ≦ 0.08, the thermoplastic resin composition is subjected to the high temperature of the component mounted by the reflow step. It is not easy to cause warpage of the substrate, but is an insulator layer formed for a thin component mounting substrate.

可使用於熱可塑性樹脂組成物中之原料之較佳例係如上述。 Preferred examples of the raw materials which can be used in the thermoplastic resin composition are as described above.

S1及S2之測定方法係如上述。 The measurement methods of S1 and S2 are as described above.

IPC/JEDEC J-STD-020C所記載之回焊溫度分佈引用於圖2及表1~3中。時間可為表中所記載之範圍之任一條件,列舉為例如若Sn-Pb共晶焊料,則設為tS=90秒、tL=105秒、tP=20秒之條件,若為無Pb焊料,則設為tS=120秒、tL=105秒、tP=30秒之條件。且此處所稱之封裝在本發明中,相當於利用回焊進行零件安裝前之基板。 封裝之厚度若為Sn-Pb共晶焊料,則較好未達2.5mm,若為無Pb焊料則較好未達2.5mm,更好為未達2.5mm~1.6mm,又更好未達1.6mm。 The reflow temperature distribution described in IPC/JEDEC J-STD-020C is quoted in Figure 2 and Tables 1-3. The time may be any of the conditions described in the table, and is, for example, a condition of t S = 90 seconds, t L = 105 seconds, and t P = 20 seconds if the Sn-Pb eutectic solder is used. When there is no Pb solder, it is set to a condition of t S = 120 seconds, t L = 105 seconds, and t P = 30 seconds. The package referred to herein is equivalent to the substrate before component mounting by reflow soldering. If the thickness of the package is Sn-Pb eutectic solder, it is preferably less than 2.5 mm, and if it is no Pb solder, it is preferably less than 2.5 mm, more preferably less than 2.5 mm to 1.6 mm, and even less than 1.6. Mm.

上述熱硬化性樹脂組成物可較好地使用作為用以形成多層印刷配線板之絕緣層之樹脂組成物(內層基板上之絕緣層用樹脂組成物)。藉由使用上述熱硬化性樹脂組成物形成多層印刷配線板之絕緣層,可抑制絕緣層之收縮,可實現不易產生基板變形之絕緣層,使基板翹曲之問題獲得顯著改善。其中,可較好地使用作為利用增層方式製造多層印刷配線板中用以形成絕緣層之樹脂組成物(多層印刷配線板之增層絕緣層用樹脂組成物),進而更較好地使用作為用於形成於其上藉由鍍敷形成導體層之絕緣層之樹脂組成物(藉鍍敷形成導體層之多層印刷配線板之增層絕緣層用樹脂組成物)。此外,上述熱硬化性樹脂組成物亦可較好地使用於多層印刷配線板係零件內建電路板之情況。亦即,本發明之樹脂組成物可較好地使用作為用於埋填零件內建電路板之零件之樹脂組成物(零件埋填用樹脂組成物)。關於零件內建電路板之製造所使用之芯基板,具有用於內建零件之孔穴,且基於零件內建電路板本身之小型化之要求而有提高該孔穴密度之傾向,且有起因於芯基板之剛性不足所致之翹曲問題更加深刻之傾向,但藉由使用上述熱硬化性樹脂組成物作為零件埋填用樹脂組 成物,即使使用孔穴密度高且薄的芯基板之情況,仍可顯著緩和翹曲問題。 The thermosetting resin composition can be preferably used as a resin composition for forming an insulating layer of a multilayer printed wiring board (resin composition for an insulating layer on an inner layer substrate). By forming the insulating layer of the multilayer printed wiring board using the above-mentioned thermosetting resin composition, shrinkage of the insulating layer can be suppressed, and an insulating layer which is less likely to cause deformation of the substrate can be realized, and the problem of warpage of the substrate can be remarkably improved. Among them, a resin composition for forming an insulating layer in a multilayer printed wiring board by a build-up method (a resin composition for a build-up insulating layer of a multilayer printed wiring board) can be preferably used, and it is more preferably used as a resin composition for forming an insulating layer of a multilayer printed wiring board. A resin composition for forming an insulating layer on which a conductor layer is formed by plating (a resin composition for a build-up insulating layer of a multilayer printed wiring board on which a conductor layer is formed by plating). Further, the above-mentioned thermosetting resin composition can also be preferably used in the case where a circuit board is built in a multilayer printed wiring board component. In other words, the resin composition of the present invention can be preferably used as a resin composition (resin composition for filling a part) for a part for embedding a built-in circuit board of a part. The core substrate used for the manufacture of the built-in circuit board has a hole for the built-in component, and has a tendency to increase the density of the hole based on the miniaturization of the built-in circuit board itself, and is caused by the core. The warpage problem due to insufficient rigidity of the substrate tends to be deeper, but the thermosetting resin composition is used as a resin group for filling a part. The object can significantly alleviate the warpage problem even in the case of using a core substrate having a high hole density and a thin core.

〈預浸體〉 <Prepreg>

上述熱硬化性樹脂組成物亦可含浸於薄片狀纖維基材中作成預浸體。預浸體係將上述熱硬化性樹脂組成物含浸於薄片狀纖維基材中而成者。 The thermosetting resin composition may be impregnated into a sheet-like fibrous base material to form a prepreg. The prepreg system is obtained by impregnating the above-mentioned thermosetting resin composition into a sheet-like fibrous base material.

預浸體所用之薄片狀纖維基材並無特別限制,可使用作為玻璃布、芳醯胺不織布、液晶聚合物不織布等預浸體用基材而常用者。用於多層印刷配線板之絕緣層形成時,較好使用厚度50μm以下之薄型薄片狀纖維基材,最好係厚度為10μm~40μm之薄片狀纖維基材,更好為10μm~30μm之薄片狀纖維基材,又更好為10~20μm之薄片狀纖維基材。作為薄片狀纖維基材使用之玻璃布基材之具體例列舉為Asahi-Schwebel(股)製之「Style 1027MS」(經絲密度75條/25mm,緯絲密度75條/25mm,布重量20g/m2,厚度19μm)、Asahi-Schwebel(股)製之「Style 1037MS」(經絲密度70條/25mm,緯絲密度73條/25mm,布重量24g/m2,厚度28μm)、有澤製作所(股)製之「1078」(經絲密度54條/25mm,緯絲密度54條/25mm,布重量48g/m2,厚度43μm)、有澤製作所(股)製之「1037NS」(經絲密度72條/25mm,緯絲密度69條/25mm,布重量23g/m2,厚度21μm)、有澤製作所(股)製之「1027NS」(經絲密度75條/25mm,緯絲密度75條 /25mm,布重量19.5g/m2,厚度16μm)、有澤製作所(股)製之「1015NS」(經絲密度95條/25mm,緯絲密度95條/25mm,布重量17.5g/m2,厚度15μm)、有澤製作所(股)製之「1000NS」(經絲密度85條/25mm,緯絲密度85條/25mm,布重量11g/m2,厚度10μm)等。且液晶聚合物不織布之具體例列舉為KURARAY(股)製之芳香族聚酯不織布之以熔融吹塑法製造之「VECRUS」(單位面積量6~15g/m2)或「VECTRAN」等。 The sheet-like fibrous base material used for the prepreg is not particularly limited, and can be used as a base material for a prepreg such as glass cloth, linaloamine nonwoven fabric, or liquid crystal polymer nonwoven fabric. When forming an insulating layer for a multilayer printed wiring board, it is preferable to use a thin sheet-like fibrous base material having a thickness of 50 μm or less, preferably a sheet-like fibrous base material having a thickness of 10 μm to 40 μm, more preferably a sheet of 10 μm to 30 μm. The fibrous substrate is preferably a sheet-like fibrous substrate of 10 to 20 μm. A specific example of the glass cloth substrate used as the sheet-like fiber base material is "Style 1027MS" manufactured by Asahi-Schwebel Co., Ltd. (the warp density is 75 pieces / 25 mm, the weft density is 75 pieces / 25 mm, and the cloth weight is 20 g / m 2 , thickness 19 μm), "Style 1037MS" made by Asahi-Schwebel (manufactured by Shisha, 70 pieces / 25 mm, weft density 73 pieces / 25 mm, cloth weight 24 g / m 2 , thickness 28 μm), Azawa Manufacturing Co., Ltd. "1078" (filament density 54 pieces / 25mm, weft density 54 pieces / 25mm, cloth weight 48g / m 2 , thickness 43μm), "1037NS" made by Yoshizawa Seisakusho Co., Ltd. Strip / 25mm, weft density 69 / 25mm, cloth weight 23g / m 2 , thickness 21μm), "1027NS" made by Azawa Manufacturing Co., Ltd. (the warp density is 75 strips / 25mm, the weft density is 75 strips / 25mm, Cloth weight 19.5g/m 2 , thickness 16μm), "1015NS" made by Azawa Seisakusho Co., Ltd. (haze density 95 strips / 25mm, weft density 95 strips / 25mm, cloth weight 17.5g / m 2 , thickness 15μm) "1000NS" (mantle density 85 pieces / 25mm, weft density 85 pieces / 25mm, cloth weight 11g / m 2 , thickness 10μm) made by Azawa Seisakusho Co., Ltd. Specific examples of the liquid crystal polymer nonwoven fabric include "VECRUS" (unit area: 6 to 15 g/m 2 ) or "VECTRAN" manufactured by a melt blow molding method of an aromatic polyester nonwoven fabric manufactured by KURARAY Co., Ltd.

預浸體較好以熱熔融法、溶劑法等習知方法製造。 The prepreg is preferably produced by a conventional method such as a hot melt method or a solvent method.

本發明之一實施形態,熱硬化性樹脂組成物層係於內層基板上層合在載體薄膜上形成將上述熱硬化性樹脂組成物含浸於纖維基材上而成之預浸體之附載體之預浸體所形成之零件安裝基板。 According to an embodiment of the present invention, the thermosetting resin composition layer is laminated on the inner layer substrate to form a prepreg of the prepreg obtained by impregnating the thermosetting resin composition onto the fiber substrate. A component mounting substrate formed by the prepreg.

〈使用預浸體之多層印刷配線板〉 <Multilayer printed wiring board using prepreg>

接著,說明使用如上述製造之預浸體製造多層印刷配線板之方法之一例。將1片或視需要多片之本發明之預浸體重疊在電路基板上,且介隔脫模薄膜以金屬板夾持,在加壓.加熱之條件下真空加壓層合。加壓.加熱條件較好係壓力為5~40kgf/cm2(49×104~392×104N/m2)、溫度為120~200℃歷時20~100分鐘。且亦可與接著薄膜同樣,以真空層合法將預浸體層合於電路基板上後,加熱硬化。隨後,與上述記載之方法同樣,使硬化之預浸體表面粗化 後,以鍍敷形成導體層而製造多層印刷配線板。 Next, an example of a method of manufacturing a multilayer printed wiring board using the prepreg manufactured as described above will be described. 1 piece or as many pieces of the prepreg of the present invention are superimposed on the circuit substrate, and the release film is sandwiched by a metal plate, under pressure. The laminate was vacuum-pressed under heating. Pressurized. The heating conditions are preferably a pressure of 5 to 40 kgf/cm 2 (49 × 10 4 to 392 × 10 4 N/m 2 ) and a temperature of 120 to 200 ° C for 20 to 100 minutes. Further, similarly to the adhesive film, the prepreg may be laminated on the circuit board by vacuum lamination, and then heat-hardened. Subsequently, similarly to the method described above, the surface of the cured prepreg is roughened, and then a conductor layer is formed by plating to produce a multilayer printed wiring board.

〈接著薄膜〉 <Continue film>

使用上述熱硬化性樹脂組成物可形成接著薄膜。 The adhesive film can be formed using the above thermosetting resin composition.

於一實施形態中,本發明之接著薄膜包含支撐體、與該支撐體接合之樹脂組成物層,且樹脂組成物層係由上述熱硬化性樹脂組成物所成。 In one embodiment, the adhesive film of the present invention comprises a support and a resin composition layer bonded to the support, and the resin composition layer is formed of the thermosetting resin composition.

接著薄膜可藉由使上述熱硬化性樹脂組成物溶解於有機溶劑中調製樹脂漆料,使用模嘴塗佈器等將該樹脂漆料塗佈於支撐體上,且使樹脂漆料經乾燥而形成。 Then, the film can be prepared by dissolving the thermosetting resin composition in an organic solvent to prepare a resin paint, applying the resin paint to a support using a die coater or the like, and drying the resin paint. form.

有機溶劑可列舉為例如丙酮、甲基乙基酮(以下亦稱為「MEK」)及環己酮等酮類,乙酸乙酯、乙酸丁酯、溶纖素乙酸酯、丙二醇單甲基醚乙酸酯及卡必醇乙酸酯等乙酸酯類,溶纖素及丁基卡必醇等卡必醇類、甲苯及二甲苯等芳香族烴類、二甲基甲醯胺、二甲基乙醯胺及N-甲基吡咯啶酮等之醯胺系溶劑等。有機溶劑可單獨使用1種,或亦可併用2種以上。 Examples of the organic solvent include ketones such as acetone, methyl ethyl ketone (hereinafter also referred to as "MEK") and cyclohexanone, ethyl acetate, butyl acetate, fibrin acetate, and propylene glycol monomethyl ether. Acetate such as acetate and carbitol acetate, carbitol such as cellulolytic and butyl carbitol, aromatic hydrocarbons such as toluene and xylene, dimethylformamide, dimethyl A guanamine-based solvent such as acetamide or N-methylpyrrolidone. The organic solvent may be used singly or in combination of two or more.

樹脂漆料之乾燥可藉加熱、吹熱風等習知之乾燥方法實施。隨著樹脂漆料中之有機溶劑之沸點亦異,但例如使用含30質量%~60質量%之有機溶劑之樹脂漆料時,可藉由在50℃~150℃乾燥3分鐘~10分鐘,形成接著薄膜。 The drying of the resin paint can be carried out by a conventional drying method such as heating or blowing hot air. As the boiling point of the organic solvent in the resin paint is different, for example, when a resin paint containing 30% by mass to 60% by mass of an organic solvent is used, it can be dried at 50 ° C to 150 ° C for 3 minutes to 10 minutes. A follow-up film is formed.

接著薄膜之形成所使用之支撐體可較好地使用由塑膠材料所成之薄膜、金屬箔(銅箔、鋁箔等)、脫模 紙,較好使用由塑膠材料所成之薄膜。至於塑膠材料列舉為例如聚對苯二甲酸乙二酯(以下有時簡稱為「PET」)、聚萘二甲酸乙二酯(以下有時簡稱為「PEN」)等聚酯,聚碳酸酯(以下有時簡稱為「PC」)、聚甲基丙烯酸甲酯(PMMA)等之丙烯酸、環狀聚烯烴、三乙醯基纖維素(TAC)、聚醚硫醚(PES)、聚醚酮、聚醯亞胺等。其中,較好為聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯,最好為便宜之聚對苯二甲酸乙二酯。較佳之一實施形態中,支撐體為聚對苯二甲酸乙二酯薄膜。 Then, the support used for the formation of the film can preferably use a film made of a plastic material, a metal foil (copper foil, aluminum foil, etc.), and a mold release. For paper, it is preferred to use a film made of a plastic material. The plastic material is exemplified by polyester such as polyethylene terephthalate (hereinafter sometimes abbreviated as "PET") or polyethylene naphthalate (hereinafter sometimes abbreviated as "PEN"), and polycarbonate ( Hereinafter, it may be simply referred to as "PC"), acrylic acid such as polymethyl methacrylate (PMMA), cyclic polyolefin, triethyl fluorenyl cellulose (TAC), polyether thioether (PES), polyether ketone, Polyimine and the like. Among them, polyethylene terephthalate or polyethylene naphthalate is preferred, and polyethylene terephthalate is preferably inexpensive. In a preferred embodiment, the support is a polyethylene terephthalate film.

支撐體亦可對與樹脂組成物層接合之面施以霧面處理、電暈處理。 The support may also be subjected to a matte treatment or a corona treatment on the surface joined to the resin composition layer.

且,作為支撐體,亦可使用與樹脂組成物層接合之面具有脫模層之附脫模層之支撐體。附脫模層之支撐體之脫模層中使用之脫模劑列舉為例如選自由醇酸樹脂、聚烯烴樹脂、胺基甲酸酯樹脂及聚矽氧樹脂所組成之群之一種以上之脫模劑。 Further, as the support, a support having a release layer having a release layer on the surface joined to the resin composition layer may be used. The release agent used in the release layer of the support with the release layer is exemplified by, for example, one or more selected from the group consisting of an alkyd resin, a polyolefin resin, a urethane resin, and a polyoxymethylene resin. Moulding agent.

本發明中,附脫模層之支撐體亦可使用市售品。市售品列舉為例如具有以醇酸樹脂系脫模劑作為主成分之脫模層之PET薄膜、LINTEC(股)製之「SK-1」、「AL-5」、「AL-7」等。 In the present invention, a commercially available product can also be used as the support for the release layer. Commercially available products are, for example, a PET film having a release layer containing an alkyd resin release agent as a main component, and "SK-1", "AL-5", "AL-7" manufactured by LINTEC Co., Ltd., and the like. .

支撐體之厚度並未特別限制,較好為5μm~75μm,更好為10μm~60μm。又,支撐體為附脫模層之支撐體時,附脫模層之支撐體之整體厚度較好為上述範圍。 The thickness of the support is not particularly limited, and is preferably from 5 μm to 75 μm, more preferably from 10 μm to 60 μm. Further, when the support is a support having a release layer, the entire thickness of the support having the release layer is preferably in the above range.

如上述使用上述熱硬化性樹脂組成物製造之接著薄膜中,樹脂組成物層之厚度並未特別限制,但基於多層印刷配線板之薄型化之觀點,較好為100μm以下,更好為80μm以下,又更好為60μm以下,再更好為50μm以下。樹脂組成物層之厚度下限通常為15μm以上。 In the adhesive film produced by using the above-mentioned thermosetting resin composition, the thickness of the resin composition layer is not particularly limited, but is preferably 100 μm or less, more preferably 80 μm or less, from the viewpoint of thickness reduction of the multilayer printed wiring board. Further, it is preferably 60 μm or less, and more preferably 50 μm or less. The lower limit of the thickness of the resin composition layer is usually 15 μm or more.

如上述使用上述熱硬化性樹脂組成物製造之接著薄膜中,樹脂組成物層之未與支撐體接合之面(亦即,與支撐體相反側之面)上可進一步根據支撐體而積層保護薄膜。保護薄膜之厚度並無特別限制,但可為例如1μm~40μm。藉由積層保護薄膜,可防止污垢等附著於樹脂組成物層之表面或防止傷痕。接著薄膜可捲成滾筒狀保存,且於製造多層印刷配線板中形成絕緣層時,可藉由剝離保護薄膜而使用。 In the adhesive film produced by using the above-mentioned thermosetting resin composition, the protective film may be further laminated according to the support on the surface of the resin composition layer that is not bonded to the support (that is, the surface opposite to the support). . The thickness of the protective film is not particularly limited, but may be, for example, 1 μm to 40 μm. By laminating the protective film, it is possible to prevent dirt or the like from adhering to the surface of the resin composition layer or to prevent scratches. Then, the film can be wound up in a roll shape, and when an insulating layer is formed in the production of the multilayer printed wiring board, it can be used by peeling off the protective film.

本發明之一實施形態中,較好為熱硬化性樹脂組成物層係於內層基板上層合於載體薄膜上形成熱硬化性樹脂組成物層而成之接著薄膜而形成之零件安裝基板。 In one embodiment of the present invention, the thermosetting resin composition layer is preferably a component mounting substrate formed by laminating a film on the inner layer substrate and forming a thermosetting resin composition layer on the carrier film.

〈使用接著薄膜之多層印刷配線板〉 <Multilayer printed wiring board using a film followed by a film>

說明使用如上述製造之接著薄膜製造多層印刷配線板之方法之一例。 An example of a method of producing a multilayer printed wiring board using the adhesive film manufactured as described above will be described.

首先,使用真空層合機將接著薄膜層合於電路基板之一面或兩面上。電路基板所用之基板列舉為例如玻璃環氧樹脂基板、金屬基板、聚酯基板、聚醯亞胺基板、BT樹脂基板、熱硬化型聚苯醚板等。又,此處所謂 的電路基板係指於如上述之基板之一面或兩面上形成經圖型加工之導體層(電路)者。且交互層合導體層與絕緣層而成之多層印刷配線板中,於該多層印刷配線板之最外層之一面或兩面成為經圖型加工之導體層(電路)者亦包含於此處所稱之電路基板中。又,導體層表面上亦可藉由黑化處理、銅蝕刻處理等施以預粗化處理。 First, the adhesive film is laminated on one or both sides of the circuit substrate using a vacuum laminator. The substrate used for the circuit board is exemplified by, for example, a glass epoxy substrate, a metal substrate, a polyester substrate, a polyimide substrate, a BT resin substrate, a thermosetting polyphenylene ether plate, or the like. Again, here The circuit board refers to a conductor layer (circuit) formed by patterning on one or both sides of the substrate as described above. In the multilayer printed wiring board in which the conductor layer and the insulating layer are alternately laminated, the conductor layer (circuit) which is patterned on one or both sides of the outermost layer of the multilayer printed wiring board is also included herein. In the circuit board. Further, the surface of the conductor layer may be subjected to a pre-roughening treatment by a blackening treatment, a copper etching treatment, or the like.

上述層合中,接著薄膜具有保護薄膜時在去除該保護薄膜後,可視需要預加熱接著薄膜及電路基板,且邊加壓及加熱將接著薄膜壓著於電路基板上。本發明之接著薄膜中,較好使用以真空層合法在減壓下層合於電路基板之方法。層合條件並未特別限制,但較好在將壓著溫度(層合溫度)較好設為70~140℃、壓著壓力較好設為1~11kgf/cm2(9.8×104~107.9×104N/m2),空氣壓力20mmHg(26.7hPa)以下之減壓下進行層合。且層合方法可為批式,亦可為利用輥之連續式。此外,真空層合亦可使用市售之真空層合機進行。市售之真空層合機列舉為例如Nichigo Morton(股)製之真空塗佈機、名機製作所(股)製之真空加壓式層合機、日立工業(股)製之輥式乾燥塗佈器、日立AIC(股)製之真空層合機等。 In the above lamination, when the protective film is removed after the film has the protective film, the film and the circuit substrate may be preheated as needed, and the film may be pressed against the circuit substrate by pressurization and heating. In the adhesive film of the present invention, a method of laminating to a circuit substrate under reduced pressure by vacuum lamination is preferably used. The lamination conditions are not particularly limited, but it is preferred to set the pressing temperature (laminating temperature) to 70 to 140 ° C and the pressing pressure to preferably 1 to 11 kgf / cm 2 (9.8 × 10 4 to 107.9). ×10 4 N/m 2 ), lamination under reduced pressure at an air pressure of 20 mmHg (26.7 hPa) or less. The laminating method may be a batch type or a continuous type using a roll. In addition, vacuum lamination can also be carried out using a commercially available vacuum laminator. Commercially available vacuum laminating machines are, for example, vacuum coating machines manufactured by Nichigo Morton Co., Ltd., vacuum pressure laminating machines manufactured by Nimko Seisakusho Co., Ltd., and roll drying coatings manufactured by Hitachi Industrial Co., Ltd. , a vacuum laminator made by Hitachi AIC Co., Ltd., etc.

此外,在減壓下進行加熱及加壓之積層步驟亦可使用一般之真空熱壓機進行。例如,可藉由自支撐體層側加壓經加熱之SUS板等金屬板而進行。加壓條件係將減壓度設為1×10-2MPa以下,較好為1×10-3MPa以下之減壓下。加熱及加壓亦可以一階段進行,但就控制樹脂滲 出之觀點而言較好分成2階段以上之條件進行。例如,較好以第一階段之加壓為溫度70~150℃、壓力1~15kgf/cm2之範圍,第2階段之加壓為溫度150~200℃、壓力1~40kgf/cm2之範圍進行。各階段之時間較好以30~120分鐘進行。市售之真空熱壓機列舉為例如MNPC-V-750-5-200(名機製作所(股)製)、VH1-1603(北川精機(股)製)等。 Further, the laminating step of heating and pressurizing under reduced pressure can also be carried out using a general vacuum hot press. For example, it can be performed by pressurizing a metal plate such as a heated SUS plate from the side of the support layer. The pressurization condition is such that the degree of pressure reduction is 1 × 10 -2 MPa or less, preferably 1 × 10 -3 MPa or less. Heating and pressurization can also be carried out in one stage, but it is preferably carried out in two or more stages from the viewpoint of controlling resin bleeding. For example, it is preferred that the pressure in the first stage is in the range of 70 to 150 ° C and the pressure is 1 to 15 kgf/cm 2 , and the pressure in the second stage is in the range of 150 to 200 ° C and a pressure of 1 to 40 kgf / cm 2 . get on. The time of each stage is preferably carried out in 30 to 120 minutes. Commercially available vacuum hot presses are exemplified by, for example, MNPC-V-750-5-200 (manufactured by Nago Seiki Co., Ltd.), VH1-1603 (manufactured by Kitagawa Seiki Co., Ltd.), and the like.

熱硬化性樹脂組成物層較好為於內層基板上層合於載體薄膜上形成熱硬化性樹脂組成物層而成之接著薄膜所形成者。於電路基板上層合接著薄膜後,冷卻至室溫附近後,剝離支撐體時可藉剝離、熱硬化而於電路基板上形成絕緣層。熱硬化條件只要依據樹脂組成物中之樹脂成分種類、含量等適當選擇即可,但較好為在150℃~220℃歷時20分鐘~180分鐘,更好為在160℃~210℃歷時30~120分鐘之範圍。 The thermosetting resin composition layer is preferably formed by laminating a film formed by laminating a thermosetting resin composition layer on a carrier film on an inner layer substrate. After laminating the film on the circuit board and cooling to the vicinity of room temperature, the support layer can be peeled off and thermally cured to form an insulating layer on the circuit board. The heat curing condition may be appropriately selected depending on the type and content of the resin component in the resin composition, but it is preferably from 150 ° C to 220 ° C for 20 minutes to 180 minutes, more preferably from 160 ° C to 210 ° C for 30 minutes. 120 minutes range.

形成絕緣層後,於硬化前不剝離支撐體之情況則於此時剝離。接著視需要,在形成於電路基板上之絕緣層上進行開孔而形成通孔、貫通孔。開孔可藉由鑽孔機、雷射、電漿等習知方法,且視需要組合該等方法進行,但利用二氧化碳氣體雷射、YAG雷射等雷射進行開孔為最一般之方法。 After the insulating layer is formed, the support is not peeled off before the hardening. Then, if necessary, a hole is formed in the insulating layer formed on the circuit board to form a through hole and a through hole. The opening can be carried out by a conventional method such as a drill, a laser, a plasma, and the like, and the same method is used, but the use of a carbon dioxide gas laser, a YAG laser or the like for opening the hole is the most common method.

接著,藉由乾式鍍敷或濕式鍍敷於絕緣層上形成導體層。作為乾式鍍敷可使用蒸鍍、濺鍍、離子電鍍等習知方法。濕式鍍敷時,係藉由依序進行利用膨潤液之膨潤處理、利用氧化劑之粗化處理及利用中和液之中和處 理,使絕緣層表面形成凹凸之投錨。利用膨潤液之膨潤處理係將絕緣層浸漬於50~80℃之膨潤液中5~20分鐘而進行。至於膨潤液可列舉為鹼溶液、界面活性劑溶液等,較佳為鹼溶液,至於該鹼溶液列舉為氫氧化鈉溶液、氫氧化鉀溶液等。市售之膨潤液列舉為例如日本ATOTECH(股)製之Swelling Dip Securiganth P、Swelling Dip Securiganth SBU等。利用氧化劑之粗化處理係使絕緣層浸漬於60~80℃之氧化劑溶液中10分鐘~30分鐘而進行。至於氧化劑列舉為例如將過錳酸鉀或過錳酸鈉溶解於氫氧化鈉之水溶液中而成之鹼性過錳酸溶液、重鉻酸鹽、臭氧、過氧化氫/硫酸、硝酸等。且,鹼性過錳酸溶液中之過錳酸鹽之濃度較好為5~10重量%。市售之氧化劑列舉為例如日本ATOTECH(股)製之Concentrate.Compact CP、Doesing Solution Securiganth P等之鹼性過錳酸溶液。利用中和液之中和處理係浸漬於30~50℃之中和液中3~10分鐘而進行。中和液較好為酸性水溶液,市售品列舉為例如日本ATOTECH(股)製之Reduction Solution Securigant P。 Next, a conductor layer is formed on the insulating layer by dry plating or wet plating. As the dry plating, a conventional method such as vapor deposition, sputtering, or ion plating can be used. In the case of wet plating, the swelling treatment with the swelling liquid, the roughening treatment with the oxidizing agent, and the neutralization of the neutralizing liquid are performed in sequence. The anchoring of the surface of the insulating layer is formed by irregularities. The swelling treatment by the swelling liquid is carried out by immersing the insulating layer in a swelling liquid at 50 to 80 ° C for 5 to 20 minutes. The swelling solution may, for example, be an alkali solution, a surfactant solution or the like, preferably an alkali solution, and the alkali solution is exemplified by a sodium hydroxide solution, a potassium hydroxide solution or the like. Commercially available swelling liquids are exemplified by Swelling Dip Securiganth P, Swelling Dip Securiganth SBU, etc., manufactured by ATOTECH Co., Ltd., Japan. The roughening treatment by the oxidizing agent is performed by immersing the insulating layer in an oxidizing agent solution at 60 to 80 ° C for 10 minutes to 30 minutes. The oxidizing agent is, for example, an alkaline permanganic acid solution, dichromate, ozone, hydrogen peroxide/sulfuric acid, nitric acid or the like obtained by dissolving potassium permanganate or sodium permanganate in an aqueous solution of sodium hydroxide. Further, the concentration of the permanganate in the alkaline permanganic acid solution is preferably from 5 to 10% by weight. Commercially available oxidizing agents are listed, for example, as Concentrate manufactured by ATOTECH Co., Ltd. of Japan. Alkaline permanganic acid solution such as Compact CP, Doesing Solution Securiganth P, etc. The neutralization solution and the treatment system are immersed in 30 to 50 ° C and in the liquid for 3 to 10 minutes. The neutralizing liquid is preferably an acidic aqueous solution, and the commercial product is exemplified by Reduction Solution Securigant P manufactured by ATOTECH Co., Ltd., Japan.

接著,組合無電解鍍敷與電解鍍敷形成導體層。又所謂導體層係形成相反圖型之鍍敷抗蝕層,亦可僅以無電解鍍敷形成導體層。至於隨後之圖型形成方法可使用例如本技藝者習知之減去法、半添加法等。 Next, electroless plating and electrolytic plating are combined to form a conductor layer. Further, the conductor layer forms a plating resist of the opposite pattern, and the conductor layer may be formed only by electroless plating. As for the subsequent pattern forming method, for example, a subtractive method, a semi-additive method, or the like which is conventionally known to those skilled in the art can be used.

藉由利用使用上述熱硬化性樹脂組成物製造之多層印刷配線板,可製造安裝半導體晶片、中介片、被 動元件等零件之基板。 By using a multilayer printed wiring board manufactured using the above thermosetting resin composition, it is possible to manufacture a semiconductor wafer, an interposer, and a semiconductor wafer. A substrate for a component such as a moving component.

例示半導體安裝基板之製造方法之一例。 An example of a method of manufacturing a semiconductor package substrate is exemplified.

〈半導體安裝基板〉 <Semiconductor Mounting Substrate>

藉由將半導體晶片安裝於使用上述熱硬化性樹脂組成物製造之多層印刷配線板之導通部位,可製造半導體安裝基板。所謂「導通部位」係「多層印刷配線板中之傳送電訊號之部位」,該場所為表面,亦可為埋填之部位均可。此外,半導體晶片只要是以半導體作為材料之電路元件即無特別限制。 A semiconductor package substrate can be manufactured by mounting a semiconductor wafer on a conductive portion of a multilayer printed wiring board manufactured using the above-described thermosetting resin composition. The "conduction portion" is a "portion for transmitting an electric signal in a multilayer printed wiring board", and the site may be a surface or a buried portion. Further, the semiconductor wafer is not particularly limited as long as it is a circuit element made of a semiconductor.

製造上述半導體安裝基板時之半導體晶片之安裝方法只要能使半導體晶片有效發揮功能即可,並無特別限制,具體列舉為線黏合安裝方法、覆晶安裝方法、利用凸塊之增層(BBUL)之安裝方法、利用異向性導電薄膜(ACF)之安裝方法、利用非導電性薄膜(NCF)之安裝方法等。 The method of mounting the semiconductor wafer in the case of manufacturing the semiconductor package substrate is not particularly limited as long as the semiconductor wafer can function effectively, and specifically, it is a wire bonding mounting method, a flip chip mounting method, and a bump-added layer (BBUL). The mounting method, the mounting method using an anisotropic conductive film (ACF), the mounting method using a non-conductive thin film (NCF), and the like.

[實施例] [Examples]

以下,以實施例及比較例具體說明本發明,但本發明並不受限於以下實施例。又,以下記載中之「份」意指「質量份」。 Hereinafter, the present invention will be specifically described by way of Examples and Comparative Examples, but the present invention is not limited to the following Examples. In addition, the "parts" in the following description means "parts by mass".

首先針對本說明書之物性評價中之測定方法.評價方法加以說明。 First of all, the measurement method in the physical property evaluation of this specification. The evaluation method will be explained.

[收縮率之測定] [Measurement of shrinkage rate]

(1-1)附樹脂之聚醯亞胺薄膜之調製 (1-1) Modulation of polyimide film with resin

使用批式真空加壓層合機(Nichigo Morton(股)製 2階增層層合機CVP700),以使樹脂組成物層與聚醯亞胺薄膜(宇部興產(股)製造之UPILEX 25S、25μm厚、240mm見方)之平滑面之中央接觸之方式,將下述製作例所製作之樹脂薄片(200mm見方)層合於單面上。層合係藉由減壓30秒使氣壓成為13hPa以下後,以100℃、壓力0.74MPa下壓著30秒而進行。 A batch vacuum lamination machine (Nichigo Morton Co., Ltd., 2nd-stage build-up laminator CVP700) was used to form a resin composition layer and a polyimide film (UPILEX 25S manufactured by Ube Industries, Ltd.). A resin sheet (200 mm square) produced in the following production example was laminated on one surface so as to be in contact with the center of the smooth surface of 25 μm thick and 240 mm square. The lamination system was carried out by depressurizing for 30 seconds to bring the gas pressure to 13 hPa or less, and then pressing it at 100 ° C and a pressure of 0.74 MPa for 30 seconds.

(1-2)初期長度之測定 (1-2) Determination of initial length

使所得附樹脂之聚醯亞胺薄膜自樹脂薄片之支撐體上,利用沖壓於200mm見方狀樹脂之距4個角20mm左右之部分形成4個貫穿孔(直徑約6mm)(孔依順時針方向暫稱為A、B、C、D),剝離樹脂薄片之支撐體後,以非接觸型圖像測定器(MitsuToyo(股)製,Quick Vision型號:QVH1X606-PRO III_BHU2G)測定所形成之各孔之中央間之長度L(LAB、LBC、LCD、LDA、LAC、LBD)(參照圖1)。 The obtained polyimine film of the resin is formed on the support of the resin sheet by forming four through holes (about 6 mm in diameter) by punching at a portion of about 200 mm from a square of 200 mm square resin (the hole is temporarily called a clockwise direction). After the support of the resin sheet was peeled off by A, B, C, and D), the center of each of the formed holes was measured by a non-contact type image measuring device (manufactured by Mitsu Toyo Co., Ltd., Quick Vision model: QVH1X606-PRO III_BHU2G). The length L (L AB , L BC , L CD , L DA , L AC , L BD ) (see Fig. 1).

(1-3)樹脂組成物層之熱硬化 (1-3) Thermal hardening of the resin composition layer

將完成測定長度之附樹脂之聚醯亞胺薄膜之聚醯亞胺薄膜面設置於255mm×255mm大小之玻璃布基材環氧樹脂兩面貼銅層合板(0.7mm厚,松下電工(股)製之 「R5715ES」)上,且四邊以聚醯亞胺接著膠帶(寬度10mm)固定,在150℃加熱90分鐘,使樹脂組成物層熱硬化,獲得硬化物層。同樣地,在190℃加熱90分鐘、在200℃加熱90分鐘,分別獲得硬化物層。 The polyimide film of the polyimide film of the length of the resin was set to a 255 mm × 255 mm glass cloth substrate epoxy resin double-sided copper laminate (0.7 mm thick, manufactured by Matsushita Electric Works Co., Ltd.) It On the "R5715ES"), the four sides were fixed with a polyimide and a tape (width: 10 mm), and heated at 150 ° C for 90 minutes to thermally cure the resin composition layer to obtain a cured layer. Similarly, the cured layer was obtained by heating at 190 ° C for 90 minutes and heating at 200 ° C for 90 minutes.

(1-4)熱硬化收縮率之測定 (1-4) Determination of thermosetting shrinkage rate

熱硬化後,剝離聚醯亞胺接著膠帶,自層合板卸下附硬化物層之聚醯亞胺薄膜,進而自聚醯亞胺薄膜剝離硬化物層,且以與L相同之方式以非接觸型圖像測定器測定(1-2)中形成之各孔之中央間之硬化後長度L’(L’AB、L’BC、L’CD、L’DA、L’AC、L’BD)。且算出s1AB=(LAB-L’AB)/LAB After heat hardening, the polyimide and the tape are peeled off, the polyimine film with the cured layer is removed from the laminate, and the cured layer is peeled off from the polyimide film, and is non-contacted in the same manner as L. The image measuring device measures the length L' after hardening between the centers of the holes formed in (1-2) (L' AB , L' BC , L' CD , L' DA , L' AC , L' BD ) . And calculate s1 AB = (L AB -L' AB ) / L AB

同樣地,針對LBC與L'BC、LCD與L’CD、LDA與L’DA、LAC與L’AC、LBD與L’BD算出s1BC、s1CD、s1DA、s1AC、s1DASimilarly, s1 BC , s1 CD , s1 DA , s1 AC are calculated for L BC and L' BC , L CD and L' CD , L DA and L' DA , L AC and L' AC , L BD and L' BD . , s1 DA .

以下式算出熱硬化收縮率。 The heat curing shrinkage ratio was calculated by the following formula.

熱硬化收縮率[x-y方向之收縮率:S1](%)={(s1AB+s1BC+s1CD+s1DA+s1AC+s1DA)/6}×100 Thermal hardening shrinkage [shrinkage in xy direction: S1] (%) = {(s1 AB + s1 BC + s1 CD + s1 DA + s1 AC + s1 DA ) / 6} × 100

(1-5)回焊步驟 (1-5) Reflow step

使結束(1-3)步驟之基材通過峰值溫度260℃之回焊裝置(日本ANTOM(股)製之「HAS-6116」,溫度分佈係依據 IPC/JEDEC J-STD-020C)進行一次。 The substrate of the finishing step (1-3) is passed through a reflow soldering apparatus having a peak temperature of 260 ° C ("HAS-6116" manufactured by ANTOM Co., Ltd., Japan, and the temperature distribution is based on IPC/JEDEC J-STD-020C) is performed once.

(1-6)回焊收縮率之測定 (1-6) Determination of reflow shrinkage rate

回焊步驟後,與(1-4)完全相同,以與L相同之方式以非接觸型圖像測定器測定(1-2)中形成之各孔之中央間之回焊後之長度L”(L”AB、L”BC、L”CD、L”DA、L”AC、L”BD)。且算出s2AB=(LAB-L”AB)/LAB After the reflow step, exactly the same as (1-4), the length L after reflow between the centers of the respective holes formed in (1-2) is measured by a non-contact type image measuring device in the same manner as L. (L" AB , L" BC , L " CD , L " DA , L " AC , L " BD ) and calculate s2 AB = (L AB - L" AB ) / L AB

同樣地,針對LBC與L”BC、LCD與L”CD、LDA與L”DA、LAC與L”AC、LBD與L”BD算出s2BC、s2CD、s2DA、s2AC、s2DASimilarly, s2 BC , s2 CD , s2 DA , s2 AC are calculated for L BC and L BC , L CD and L ” CD , L DA and L ” DA , L AC and L” AC , L BD and L” BD . , s2 DA .

以下式算出回焊收縮率。 The reflow shrinkage ratio is calculated by the following formula.

回焊收縮率[x-y方向之收縮率:S2](%)={(s2AB+s2BC+s2CD+s2DA+s2AC+s2DA)/6}×100 Reflow shrinkage rate [ shrinkage rate in xy direction: S2] (%) = {(s2 AB + s2 BC + s2 CD + s2 DA + s2 AC + s2 DA ) / 6} × 100

[回焊行為評價用基板之調製] [Modulation of substrate for evaluation of reflow behavior]

(2-1)內層基板之準備 (2-1) Preparation of the inner substrate

準備玻璃布基材環氧樹脂層合板[已蝕刻除銅箔之未貼銅板(unclad-board),0.06mm厚、SUMITOMO BAKELITE(股)製之「LaXY-4785TH-B」]作為內層基板。 A glass cloth substrate epoxy resin laminate (a unclad-board having a copper foil etched, 0.06 mm thick, "LaXY-4785TH-B" manufactured by SUMITOMO BAKELITE Co., Ltd.) was prepared as an inner substrate.

(2-2)樹脂薄片之層合 (2-2) Lamination of resin sheets

使用批式真空加壓層合機(Nichigo Morton(股)製 2階增層層合機CVP700),以使樹脂組成物層與內層基板接觸之方式,將下述製作例製作之樹脂薄片層合於內層基板之兩面上。層合係藉由減壓30秒使氣壓成為13hPa以下後,藉由以100℃、壓力0.74MPa下壓著30秒而實施。接著,以100℃、壓力0.5MPa進行熱加壓60秒, A resin sheet layer produced in the following production example was used in such a manner that a resin composition layer was brought into contact with the inner layer substrate by using a batch vacuum pressure laminator (Nichigo Morton Co., Ltd. second-order build-up laminator CVP700). Cooperate on both sides of the inner substrate. The lamination system was carried out by depressurizing for 30 seconds to bring the gas pressure to 13 hPa or less, and then pressing it at 100 ° C under a pressure of 0.74 MPa for 30 seconds. Next, hot pressing was performed at 100 ° C and a pressure of 0.5 MPa for 60 seconds.

(2-3)樹脂組成物層之熱硬化 (2-3) Thermal hardening of the resin composition layer

自經層合樹脂薄片之基板剝離樹脂薄片之支撐體後,在150℃加熱90分鐘,使樹脂組成物層熱硬化,獲得硬化物層。同樣地,在190℃加熱90分鐘、在200℃加熱90分鐘,分別獲得硬化物層。 After the support of the resin sheet was peeled off from the substrate of the laminated resin sheet, it was heated at 150 ° C for 90 minutes to thermally cure the resin composition layer to obtain a cured layer. Similarly, the cured layer was obtained by heating at 190 ° C for 90 minutes and heating at 200 ° C for 90 minutes.

(2-4)回焊行為之評價 (2-4) Evaluation of reflow behavior

切出45mm見正之單片後(n=5),通過一次峰值溫度260℃之回焊裝置(日本ANTOM(股)製之「HAS-6116」(該條件亦依據IPC/JEDEC J-STD-020C)。接著,使用平坦/翹曲度量測儀(shadow moire)裝置(Akrometrix製之TherMoire AXP),依據IPC/JEDEC J-STD-020C(峰值溫度260℃)以溫度分佈自基板下部加熱,測定基板中央之10mm見方部分之翹曲行為。 After cutting a 45mm square piece (n=5), pass a reflow soldering device with a peak temperature of 260 °C ("HAS-6116" made by ANTOM Co., Ltd. (this condition is also based on IPC/JEDEC J-STD-020C). Then, using a flat/warm moire device (TherMoire AXP manufactured by Akrometrix), the temperature is distributed from the lower portion of the substrate according to IPC/JEDEC J-STD-020C (peak temperature 260 ° C). The warping behavior of the 10 mm square portion of the center of the substrate.

所得位移數據之最大高度與最少高度之差異在全部溫度範圍內於1樣品中即成為40μm以上者評價為×,全部樣品均未達40μm者評價為○。 The difference between the maximum height and the minimum height of the obtained displacement data was evaluated as × in the case of 40 μm or more in one sample in all temperature ranges, and was evaluated as ○ in all samples which did not reach 40 μm.

實施例及比較例中使用之樹脂薄片1、2、3及4係以下述順序製作。 The resin sheets 1, 2, 3, and 4 used in the examples and the comparative examples were produced in the following order.

〈製作例1(樹脂薄片1之製作)〉 <Production Example 1 (Production of Resin Sheet 1)>

將雙酚A型環氧樹脂(三菱化學(股)製之「828EL」,環氧當量約185)12份、萘型環氧樹脂(DIC(股)製之「HP4032SS」,環氧當量約144)3份、聯苯型環氧樹脂(三菱化學(股)製之「YX4000HK」,環氧當量約185)6份、聯苯型環氧樹脂(日本化藥(股)製之「NC3000H」,環氧當量約288)25份、及苯氧樹脂(三菱化學(股)製之「YX6954BH30」、固體成分30質量%之MEK/環己酮=1/1溶液)20份於溶劑石油腦(solvent naphtha)15份中邊攪拌邊加熱溶解。冷卻至室溫後,於其中混合含三嗪之酚酚醛清漆系硬化劑(DIC(股)製之「LA-7054」,羥基當量125、固體成分60%之MEK溶液)20份、萘酚系硬化劑(新日鐵化學(股)製之「SN485」,羥基當量215、固體成分60%之MEK溶液)10份、硬化促進劑(4-二甲胺基吡啶(DMAP)、固體成分5質量%之MEK溶液)0.4份、難燃劑(三光(股)製之「HCA-HQ」、10-(2,5-二羥基苯基)-10-氫-9-氧雜-10-磷雜菲-10-氧化物、平均粒徑2μm)3份、以胺基矽烷系偶合劑(信越化學工業(股)製之「KBM573」)進行表面處理之球形二氧化矽(平均粒徑0.25μm,ADMATECHS(股)製之「SOC1」,每單位表面積之碳量為0.36mg/m2)40份、以胺基矽烷系偶合劑(信越化學工業(股) 製之「KBM573」)進行表面處理之球形玻璃填料(平均粒徑0.2μm,旭硝子(股)製之「AZ Filler」,每單位表面積之碳量為0.38mg/m2)10份,以高速旋轉混練機均勻分散,調製樹脂漆料1。 A bisphenol A type epoxy resin ("828EL" manufactured by Mitsubishi Chemical Corporation, an epoxy equivalent of about 185) 12 parts, a naphthalene type epoxy resin ("HD4032SS" manufactured by DIC), an epoxy equivalent of about 144 3 parts, biphenyl type epoxy resin ("YX4000HK" manufactured by Mitsubishi Chemical Co., Ltd., epoxy equivalent: 185), 6 parts, biphenyl type epoxy resin ("NC3000H" manufactured by Nippon Kayaku Co., Ltd." Epoxy equivalent of about 288) 25 parts, and phenoxy resin ("XX6954BH30" manufactured by Mitsubishi Chemical Corporation, MEK/cyclohexanone = 1/1 solution of solid content 30% by mass) 20 parts in solvent petroleum brain (solvent) Naphtha) 15 parts of the mixture were heated and dissolved while stirring. After cooling to room temperature, a triazine-containing phenol novolak-based curing agent ("LA-7054" manufactured by DIC Co., Ltd., a hydroxyl group equivalent of 125, and a solid component 60% MEK solution) was mixed therein, and a naphthol system was added. Hardener ("SN485" made by Nippon Steel Chemical Co., Ltd., hydroxyl equivalent 215, 60% solid solution MEK solution) 10 parts, hardening accelerator (4-dimethylaminopyridine (DMAP), solid content 5 mass % MEK solution) 0.4 parts, flame retardant ("HCA-HQ", 10-(2,5-dihydroxyphenyl)-10-hydro-9-oxa-10-phosphonium, manufactured by Sanguang Co., Ltd. 3 parts of phenanthrene-10-oxide, an average particle diameter of 2 μm, and a spherical cerium oxide (average particle diameter of 0.25 μm) surface-treated with an amine decane-based coupling agent ("KBM573" manufactured by Shin-Etsu Chemical Co., Ltd.) "SOC1" manufactured by ADMATECHS Co., Ltd., having a carbon content per unit surface area of 0.36 mg/m 2 ), 40 parts, and surface-treated with an amine-based decane coupling agent ("KBM573" manufactured by Shin-Etsu Chemical Co., Ltd.) Spherical glass filler (average particle size 0.2 μm, "AZ Filler" manufactured by Asahi Glass Co., Ltd., 10 parts per unit surface area of carbon (0.38 mg/m 2 )), uniformly dispersed by a high-speed rotary kneading machine to prepare a resin paint 1 .

接著,於附醇酸樹脂系脫模層之PET薄膜(LINTEC(股)製之「AL5」,厚度38μm)之脫模層側,以使乾燥後之樹脂組成物層之厚度成為40μm之方式均勻塗佈樹脂漆料1,在80~120℃(平均100℃)乾燥5分鐘,製作樹脂薄片1。 Then, the release layer side of the PET film ("AL5" manufactured by LINTEC Co., Ltd., thickness: 38 μm) having an alkyd-based release layer was made uniform so that the thickness of the dried resin composition layer was 40 μm. The resin paint 1 was applied and dried at 80 to 120 ° C (average 100 ° C) for 5 minutes to prepare a resin sheet 1.

〈製作例2(樹脂薄片2之製作)〉 <Production Example 2 (Production of Resin Sheet 2)>

將雙酚型環氧樹脂(新日鐵化學(股)製之「ZX1059」,雙酚A型與雙酚F型之1:1混合品,環氧當量約169)5份、聯苯型環氧樹脂(三菱化學(股)製之「YX4000HK」,環氧當量約185)12份、二環戊二烯型環氧樹脂(DIC(股)製之「HP-7200H」,環氧當量約275)9份、苯氧樹脂(三菱化學(股)製之「YL7553BH30」、固體成分30質量%之MEK/環己酮=1/1溶液)16份於溶劑石油腦30份中邊攪拌邊加熱溶解。冷卻至室溫後,於其中混合活性酯系硬化劑(DIC(股)製之「HPC8000-65T」,活性基當量約223、不揮發分65質量%之甲苯溶液)40份、硬化促進劑(4-二甲胺基吡啶、固體成分5質量%之MEK溶液)3份、以胺基矽烷系偶合劑(信越化學工業(股)製之「KBM573」)進行表面處理之球形二氧化矽(平均粒徑 0.5μm,ADMATECHS(股)製之「SOC2」,每單位表面積之碳量為0.39mg/m2)100份、以胺基矽烷系偶合劑(信越化學工業(股)製之「KBM573」)進行表面處理之球形玻璃填料(平均粒徑0.2μm,旭硝子(股)製之「AZ Filler」,每單位表面積之碳量為0.38mg/m2)40份,以高速旋轉混練機均勻分散,調製樹脂漆料2。 Bisphenol type epoxy resin (ZX1059) made by Nippon Steel Chemical Co., Ltd., 1:1 mixture of bisphenol A type and bisphenol F type, epoxy equivalent of about 169) 5 parts, biphenyl type ring Oxygen resin (YX4000HK) manufactured by Mitsubishi Chemical Corporation, 12 parts epoxy equivalent: 185), dicyclopentadiene type epoxy resin (HP-7200H, manufactured by DIC), epoxy equivalent of approximately 275 9 parts, phenoxy resin ("755755BH30" manufactured by Mitsubishi Chemical Corporation, MEK/cyclohexanone = 1/1 solution of solid content 30% by mass), 16 parts, dissolved in 30 parts of solvent petroleum brain while stirring . After cooling to room temperature, 40 parts of an active ester-based curing agent ("HPC8000-65T" manufactured by DIC Co., Ltd., a toluene solution having a reactive base equivalent of about 223 and a nonvolatile content of 65% by mass), and a hardening accelerator (40 parts) were mixed therein. 3 parts of 4-dimethylaminopyridine, a solid content of 5% by mass of MEK solution), spherical cerium oxide surface-treated with an amine decane-based coupling agent ("KBM573" manufactured by Shin-Etsu Chemical Co., Ltd.) The particle size is 0.5 μm, the "SOC2" manufactured by ADMATECHS Co., Ltd., the amount of carbon per unit surface area is 0.39 mg/m 2 ), 100 parts, and the amine decane-based coupling agent (KBM573, manufactured by Shin-Etsu Chemical Co., Ltd.) A spherical glass filler (having an average particle diameter of 0.2 μm, "AZ Filler" manufactured by Asahi Glass Co., Ltd., having a carbon content per unit surface area of 0.38 mg/m 2 ) 40 parts, and uniformly dispersed by a high-speed rotary kneading machine. Modification of resin paint 2.

接著,使用樹脂漆料2,以與製造例1相同之順序製作樹脂薄片2。 Next, the resin sheet 2 was produced in the same manner as in Production Example 1 using the resin paint 2.

〈製作例3(樹脂薄片3之製作)〉 <Production Example 3 (Production of Resin Sheet 3)>

將萘型環氧樹脂(DIC(股)製之「HP4032SS」,環氧當量約144)6份、聯苯型環氧樹脂(三菱化學(股)製造之「YX4000HK」,環氧當量約185)6份、聯苯型環氧樹脂(日本化藥(股)製之「NC3000H」,環氧當量約288)20份、及苯氧樹脂(三菱化學(股)製之「YL7553BH30」、固體成分30質量%之MEK溶液)8份於溶劑石油腦15份中邊攪拌邊加熱溶解。冷卻至室溫後,於其中混合雙酚A二氰酸酯之預聚物(日本LONZA(股)製之「BA230S75」、氰酸酯當量約232、不揮發分75質量%之MEK溶液)20份、酚酚醛清漆型多官能氰酸酯樹脂(日本LONZA(股)製之「PT30S」,氰酸酯當量約133,不揮發分85質量%之MEK溶液)8份、活性酯系硬化劑(DIC(股)製之「HPC8000-65T」,活性基當量約223之不揮發分65質量%之甲苯溶液)8份、硬化促進劑(4-二甲胺基吡啶,固 體成分5質量%之MEK溶液)0.4份、硬化促進劑(東京化成(股)製之乙醯基丙酮酸鈷(III),固體成分1質量%之MEK溶液)3份、難燃劑(三光(股)製之「HCA-HQ」、10-(2,5-二羥基苯基)-10-氫-9-氧雜-10-磷雜菲-10-氧化物、平均粒徑2μm)3份、以胺基矽烷系偶合劑(信越化學工業(股)製之「KBM573」)進行表面處理之球形二氧化矽(平均粒徑0.5μm,ADMATECHS(股)製之「SOC2」,每單位表面積之碳量為0.39mg/m2)50份、以胺基矽烷系偶合劑(信越化學工業(股)製之「KBM573」)進行表面處理之球形玻璃填料(平均粒徑0.2μm,旭硝子(股)製之「AZ Filler」,每單位表面積之碳量為0.38mg/m2)50份,以高速旋轉混練機均勻分散,調製樹脂漆料3。 6 parts of naphthalene type epoxy resin ("HP4032SS" manufactured by DIC Co., Ltd., epoxy equivalent: 144), biphenyl type epoxy resin ("YX4000HK" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent: 185) 6 parts, biphenyl type epoxy resin ("NC3000H" manufactured by Nippon Kayaku Co., Ltd., epoxy equivalent: 288) 20 parts, and phenoxy resin ("LM7553BH30" manufactured by Mitsubishi Chemical Corporation), solid content 30 8 parts by mass of MEK solution) 8 parts of the solvent petroleum brain 15 parts were heated and dissolved while stirring. After cooling to room temperature, a prepolymer of bisphenol A dicyanate ("BA230S75" manufactured by LONZA Co., Ltd., a cyanate equivalent of about 232, and a nonvolatile matter of MEK solution of 20 mass%) was mixed therein. A portion, a phenol novolac type polyfunctional cyanate resin ("PT30S" manufactured by LONZA Co., Ltd., a acetonitrile ester equivalent of about 133, a nonvolatile matter of 8 mass% of MEK solution), 8 parts, an active ester-based hardener ( "HPC8000-65T" manufactured by DIC Co., Ltd., a toluene solution having a non-volatile content of about 223 and a non-volatile content of 223), 8 parts, a hardening accelerator (4-dimethylaminopyridine, a solid content of 5% by mass of MEK) 0.4 parts of the solution, a hardening accelerator (cobalt (III) acetyl sulfacetate (III), a solid content of 1% by mass of MEK solution), 3 parts, and a flame retardant (HCA, manufactured by Sanguang Co., Ltd.) -HQ", 10-(2,5-dihydroxyphenyl)-10-hydro-9-oxa-10-phosphaphenanthrene-10-oxide, average particle diameter 2 μm) 3 parts, with amine decane A coupling agent ("KBM573" manufactured by Shin-Etsu Chemical Co., Ltd.) is a surface-treated spherical cerium oxide (average particle diameter: 0.5 μm, "SOC2" manufactured by ADMATECHS Co., Ltd.), and the amount of carbon per unit surface area is 0.39 mg / m 2 ) 50 parts, with an amine decane series A spherical glass filler (having an average particle diameter of 0.2 μm, "AZ Filler" manufactured by Asahi Glass Co., Ltd.) having a surface treatment of "KBM573" manufactured by Shin-Etsu Chemical Co., Ltd., has a carbon content per unit surface area of 0.38 mg/m. 2 ) 50 parts, uniformly dispersed by a high-speed rotary kneading machine to prepare a resin paint 3.

接著,使用樹脂漆料3,以與製造例1相同之順序製作樹脂薄片3。 Next, the resin sheet 3 was produced in the same manner as in Production Example 1 using the resin paint 3.

〈製作例4(樹脂薄片4之製作)〉 <Production Example 4 (Production of Resin Sheet 4)>

將雙酚A型環氧樹脂(三菱化學(股)製之「828EL」,環氧當量約185)12份、萘型環氧樹脂(DIC(股)製之「HP4032SS」,環氧當量約144)3份、聯苯型環氧樹脂(三菱化學(股)製之「YX4000HK」,環氧當量約185)6份、聯苯型環氧樹脂(日本化藥(股)製之「NC3000H」,環氧當量約288)25份、苯氧樹脂(三菱化學(股)製之「YX6954BH30」、固體成分30質量%之MEK/環己酮=1/1溶液)20份於溶劑石油腦10份中邊攪拌邊加熱溶 解。冷卻至室溫後,於其中混合含三嗪骨架之酚酚醛清漆系硬化劑(DIC(股)製之「LA-7054」,羥基當量125、固體成分60%之MEK溶液)20份、萘酚系硬化劑(新日鐵化學(股)製之「SN485」,羥基當量215、固體成分60%之MEK溶液)10份、硬化促進劑(4-二甲胺基吡啶(DMAP)、固體成分5質量%之MEK溶液)0.4份、難燃劑(三光(股)製之「HCA-HQ」、10-(2,5-二羥基苯基)-10-氫-9-氧雜-10-磷雜菲-10-氧化物、平均粒徑2μm)3份、以胺基矽烷系偶合劑(信越化學工業(股)製之「KBM573」)進行表面處理之球形二氧化矽(平均粒徑0.25μm,ADMATECHS(股)製之「SOC1」,每單位表面積之碳量為0.36mg/m2)40份,以高速旋轉混練機均勻分散,調製樹脂漆料4。 A bisphenol A type epoxy resin ("828EL" manufactured by Mitsubishi Chemical Corporation, an epoxy equivalent of about 185) 12 parts, a naphthalene type epoxy resin ("HD4032SS" manufactured by DIC), an epoxy equivalent of about 144 3 parts, biphenyl type epoxy resin ("YX4000HK" manufactured by Mitsubishi Chemical Co., Ltd., epoxy equivalent: 185), 6 parts, biphenyl type epoxy resin ("NC3000H" manufactured by Nippon Kayaku Co., Ltd." Epoxy equivalent of about 288) 25 parts, phenoxy resin ("XX6954BH30" manufactured by Mitsubishi Chemical Corporation, MEK/cyclohexanone = 1/1 solution of solid content 30% by mass) 20 parts in 10 parts of solvent petroleum brain Heat and dissolve while stirring. After cooling to room temperature, a triphenyl skeleton-containing phenol novolak-based curing agent ("LA-7054" manufactured by DIC Co., Ltd., a hydroxyl group equivalent of 125, a solid component 60% MEK solution), and naphthol were mixed therein. Hardening agent ("SN485" manufactured by Nippon Steel Chemical Co., Ltd., hydroxyl equivalent 215, 60% solid solution of MEK solution) 10 parts, hardening accelerator (4-dimethylaminopyridine (DMAP), solid content 5 Mass % of MEK solution) 0.4 parts, flame retardant ("HCA-HQ", 10-(2,5-dihydroxyphenyl)-10-hydrogen-9-oxa-10-phosphine" Spherical cerium oxide (average particle size 0.25 μm) surface-treated with an amino decane-based coupling agent ("KBM573" manufactured by Shin-Etsu Chemical Co., Ltd.) in an amount of 3 parts by mass of phenanthrene-10-oxide "SOC1" manufactured by ADMATECHS Co., Ltd., having a carbon content per unit surface area of 0.36 mg/m 2 ), was uniformly dispersed by a high-speed rotary kneading machine to prepare a resin paint 4 .

接著,使用樹脂漆料4,以與製造例1相同之順序製作樹脂薄片4。 Next, the resin sheet 4 was produced in the same manner as in Production Example 1 using the resin paint 4.

〈製作例5(樹脂薄片5之製作)〉 <Production Example 5 (Production of Resin Sheet 5)>

將萘型環氧樹脂(DIC(股)製之「HP4032SS」,環氧當量約144)6份、聯苯型環氧樹脂(三菱化學(股)製之「YX4000HK」,環氧當量約185)6份、聯苯型環氧樹脂(日本化藥(股)製之「NC3000H」,環氧當量約288)20份、苯氧樹脂(三菱化學(股)製之「YL7553BH30」、固體成分30質量%之MEK溶液)16份於溶劑石油腦5份中邊攪拌邊加熱溶解。冷卻至室溫後,於其中混合雙酚A二氰酸酯之預聚物(日本LONZA(股)製之「BA230S75」、氰酸 酯當量約232、不揮發分75質量%之MEK溶液)20份、酚酚醛清漆型多官能氰酸酯樹脂(日本LONZA(股)製之「PT30S」,氰酸酯當量約133,不揮發分85質量%之MEK溶液)8份、活性酯系硬化劑(DIC(股)製之「HPC8000-65T」,活性基當量約223之不揮發分65質量%之甲苯溶液)8份、硬化促進劑(4-二甲胺基吡啶、固體成分5質量%之MEK溶液)0.4份、硬化促進劑(東京化成(股)製之乙醯基丙酮酸鈷(III),固體成分1質量%之MEK溶液)3份、難燃劑(三光(股)製之「HCA-HQ」、10-(2,5-二羥基苯基)-10-氫-9-氧雜-10-磷雜菲-10-氧化物、平均粒徑2μm)3份、以胺基矽烷系偶合劑(信越化學工業(股)製之「KBM573」)進行表面處理之球形二氧化矽(平均粒徑0.25μm,ADMATECHS(股)製之「SOC1」,每單位表面積之碳量為0.36mg/m2)40份,以高速旋轉混練機均勻分散,調製樹脂漆料5。 6 parts of naphthalene type epoxy resin ("HP4032SS" manufactured by DIC Co., Ltd., epoxy equivalent: 144), biphenyl type epoxy resin ("XX4000HK" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent: 185) 6 parts, biphenyl type epoxy resin ("NC3000H" manufactured by Nippon Kayaku Co., Ltd., epoxy equivalent: 288) 20 parts, phenoxy resin ("755755BH30" manufactured by Mitsubishi Chemical Corporation), solid content 30 mass 16 parts of MEK solution) 16 parts of the solvent petroleum brain 5 parts were heated and dissolved while stirring. After cooling to room temperature, a prepolymer of bisphenol A dicyanate ("BA230S75" manufactured by LONZA Co., Ltd., a cyanate equivalent of about 232, and a nonvolatile matter of MEK solution of 20 mass%) was mixed therein. A portion, a phenol novolac type polyfunctional cyanate resin ("PT30S" manufactured by LONZA Co., Ltd., a acetonitrile ester equivalent of about 133, a nonvolatile matter of 8 mass% of MEK solution), 8 parts, an active ester-based hardener ( "HPC8000-65T" manufactured by DIC Co., Ltd., a toluene solution having a non-volatile content of about 223 and a non-volatile content of 223), 8 parts, a hardening accelerator (4-dimethylaminopyridine, and a solid content of 5% by mass of MEK) 0.4 parts of the solution, a hardening accelerator (cobalt (III) acetyl sulfacetate (III), a solid content of 1% by mass of MEK solution), 3 parts, and a flame retardant (HCA, manufactured by Sanguang Co., Ltd.) -HQ", 10-(2,5-dihydroxyphenyl)-10-hydro-9-oxa-10-phosphaphenanthrene-10-oxide, average particle diameter 2 μm) 3 parts, with amine decane A coupling agent ("KBM573" manufactured by Shin-Etsu Chemical Co., Ltd.) is a surface-treated spherical cerium oxide (average particle size 0.25 μm, "SOC1" manufactured by ADMATECHS Co., Ltd.), and the carbon amount per unit surface area is 0.36 mg / m 2) 40 parts of a high speed rotating mixing Homogeneously dispersed to prepare a resin varnish 5.

接著,使用樹脂漆料5,以與製造例1相同之順序製作樹脂薄片5。 Next, the resin sheet 5 was produced in the same manner as in Production Example 1 using the resin paint 5.

樹脂薄片1至5之樹脂組成物層之組成示於表4。 The composition of the resin composition layers of the resin sheets 1 to 5 is shown in Table 4.

評價結果示於表5。 The evaluation results are shown in Table 5.

如由表2之結果所了解,即使使用相同樹脂薄片1,於熱硬化步驟之溫度為190℃(試驗例1)×90分鐘時,可獲得滿足本發明規定之組成物,相對於此,於150℃(試驗例5)×90分鐘時,無法獲得滿足本發明規定之組成物。且,使用相同樹脂薄片2亦同樣,熱硬化步驟之溫度為200℃(試驗例2)×90分鐘時,獲得滿足本發明規定之組成物,相對於此,於150℃(試驗例6)×90分鐘時,無法獲得滿足本發明規定之組成物。 As is understood from the results of Table 2, even when the same resin sheet 1 was used, when the temperature of the thermosetting step was 190 ° C (Test Example 1) × 90 minutes, a composition satisfying the requirements of the present invention was obtained, whereas At 150 ° C (Test Example 5) × 90 minutes, a composition satisfying the requirements of the present invention could not be obtained. Further, in the same manner as in the case of using the same resin sheet 2, when the temperature of the heat curing step was 200 ° C (Test Example 2) × 90 minutes, a composition satisfying the requirements of the present invention was obtained, whereas at 150 ° C (Test Example 6) × At 90 minutes, the composition satisfying the requirements of the present invention could not be obtained.

樹脂薄片1與樹脂薄片4具有類似組成,但儘管熱硬化步驟為相同條件,試驗例1係AZ Filler而能獲得滿足本發明規定之組成物,相對於此,試驗例4之情況下,無法獲得滿足本發明規定之組成物。 The resin sheet 1 and the resin sheet 4 have a similar composition, but the test piece 1 is AZ Filler, and the composition satisfying the requirements of the present invention can be obtained, although the thermal curing step is the same condition. On the other hand, in the case of the test example 4, the same cannot be obtained. A composition that satisfies the requirements of the present invention.

樹脂薄片3與樹脂薄片5具有類似組成,但儘管熱硬化步驟為相同條件,樹脂薄片3(試驗例3)仍能獲得滿足本發明規定之組成物,相對於此,樹脂薄片5(試驗例7)之情況下,無法獲得滿足本發明規定之組成物。此外,樹脂薄片5之情況,即使改變熱硬化步驟之溫度,仍無法獲得滿足本發明規定之組成物(試驗例8)。 The resin sheet 3 has a similar composition to the resin sheet 5, but the resin sheet 3 (Test Example 3) can obtain a composition satisfying the requirements of the present invention, although the thermosetting step is the same condition, whereas the resin sheet 5 (Test Example 7) In the case of the present invention, a composition satisfying the provisions of the present invention cannot be obtained. Further, in the case of the resin sheet 5, even if the temperature of the thermosetting step was changed, the composition satisfying the present invention could not be obtained (Test Example 8).

Claims (24)

一種零件安裝基板之製造方法,其特徵為包含下述步驟:使形成於內層基板上之熱硬化性樹脂組成物層加熱硬化,形成硬化物層之熱硬化步驟,及利用回焊將零件安裝於具有該硬化物層之基板上之回焊步驟;且熱硬化性樹脂組成物層之熱硬化步驟後之x-y方向之收縮率(S1)為0.35%以下,硬化物層之回焊步驟後之x-y方向之收縮率(S2)為0.4%以下,且S1與S2滿足S2-S1≦0.08之關係。 A method of manufacturing a component mounting substrate, comprising the steps of: heat-hardening a thermosetting resin composition layer formed on an inner layer substrate, forming a hardening step of the cured layer, and mounting the component by reflow soldering a reflow step on the substrate having the cured layer; and a shrinkage ratio (S1) in the xy direction after the thermosetting step of the thermosetting resin composition layer is 0.35% or less, and after the reflow step of the cured layer The shrinkage ratio (S2) in the xy direction is 0.4% or less, and S1 and S2 satisfy the relationship of S2-S1 ≦ 0.08. 如請求項1之方法,其中熱硬化性樹脂組成物含有環氧樹脂、硬化劑及無機填充材。 The method of claim 1, wherein the thermosetting resin composition contains an epoxy resin, a hardener, and an inorganic filler. 如請求項2之方法,其含有二氧化矽作為無機填充材。 The method of claim 2, which comprises cerium oxide as an inorganic filler. 如請求項2之方法,其含有摻雜鈦之二氧化矽作為無機填充材。 The method of claim 2, which comprises titanium doped ceria as an inorganic filler. 如請求項2之方法,其中將熱硬化性樹脂組成物中之不揮發性成分設為100質量%時,熱硬化性樹脂組成物中之無機填充材之含量為40質量%以上。 In the method of claim 2, when the non-volatile component in the thermosetting resin composition is 100% by mass, the content of the inorganic filler in the thermosetting resin composition is 40% by mass or more. 如請求項1之方法,其中熱硬化步驟中之加熱溫度為120℃~240℃。 The method of claim 1, wherein the heating temperature in the heat hardening step is from 120 ° C to 240 ° C. 如請求項1之方法,其中回焊步驟中之峰值溫度為210℃~330℃。 The method of claim 1, wherein the peak temperature in the reflow step is 210 ° C to 330 ° C. 如請求項1之方法,其中熱硬化性樹脂組成物層係藉由將熱硬化性樹脂組成物含浸於纖維基材中所成之預 浸體而形成。 The method of claim 1, wherein the thermosetting resin composition layer is formed by impregnating the thermosetting resin composition into the fibrous substrate Formed by dipping. 如請求項1之方法,其中熱硬化性樹脂組成物層係於內層基板上層合接著薄膜所形成者,該接著薄膜係在載體薄膜上形成有熱硬化性樹脂粗組成物層者。 The method of claim 1, wherein the thermosetting resin composition layer is formed by laminating the film on the inner layer substrate, and the film is formed on the carrier film by forming a layer of the thermosetting resin coarse composition layer. 如請求項1之方法,其中熱硬化性樹脂組成物層係於內層基板上層合附載體之預浸體所形成者,該附載體之預浸體係在載體薄膜上形成有將熱硬化性樹脂組成物含浸於纖維基材上而成之預浸體者。 The method of claim 1, wherein the thermosetting resin composition layer is formed by laminating a prepreg to the carrier on the inner substrate, and the prepreg system of the carrier is formed with a thermosetting resin on the carrier film. A prepreg formed by impregnating a fibrous substrate with a composition. 如請求項1之方法,其中硬化物層之厚度為3~200μm。 The method of claim 1, wherein the hardened layer has a thickness of from 3 to 200 μm. 如請求項1之方法,其中零件為半導體晶片、中介片(Interposer)或被動元件。 The method of claim 1, wherein the part is a semiconductor wafer, an interposer or a passive component. 如請求項12之方法,其中零件為半導體晶片。 The method of claim 12, wherein the part is a semiconductor wafer. 一種熱硬化性樹脂組成物,其係用以形成絕緣層之熱硬化性樹脂組成物,其特徵為在使熱硬化後之x-y方向之收縮率(S1)成為0.35%以下之條件下熱硬化之該熱硬化性樹脂組成物之硬化物,依據IPC/JEDEC J-STD-020C之回焊溫度分佈加熱後之x-y方向之收縮率(S2)為0.4%以下,且S1與S2滿足S2-S1≦0.08之關係。 A thermosetting resin composition which is a thermosetting resin composition for forming an insulating layer, which is characterized in that it is thermally hardened under the condition that the shrinkage ratio (S1) in the xy direction after thermosetting is 0.35% or less. The cured product of the thermosetting resin composition has a shrinkage ratio (S2) of 0.4% or less in the xy direction after heating according to the reflow temperature distribution of IPC/JEDEC J-STD-020C, and S1 and S2 satisfy S2-S1≦ The relationship of 0.08. 如請求項14之熱硬化性樹脂組成物,其中回焊之峰值溫度為260℃。 The thermosetting resin composition of claim 14, wherein the peak temperature of the reflow is 260 °C. 如請求項15之熱硬化性樹脂組成物,其中熱硬化性樹脂組成物含有環氧樹脂、硬化劑及無機填充材。 The thermosetting resin composition according to claim 15, wherein the thermosetting resin composition contains an epoxy resin, a curing agent, and an inorganic filler. 如請求項16之熱硬化性樹脂組成物,其含有二氧化矽作為無機填充材。 The thermosetting resin composition of claim 16, which comprises cerium oxide as an inorganic filler. 如請求項16之熱硬化性樹脂組成物,其含有摻雜鈦之二氧化矽作為無機填充材。 The thermosetting resin composition of claim 16, which comprises titanium doped ceria as an inorganic filler. 如請求項16之熱硬化性樹脂組成物,其中將熱硬化性樹脂組成物中之不揮發性成分設為100質量%時,熱硬化性樹脂組成物中之無機填充材之含量為40質量%以上。 The thermosetting resin composition of claim 16, wherein the non-volatile component in the thermosetting resin composition is 100% by mass, and the content of the inorganic filler in the thermosetting resin composition is 40% by mass. the above. 一種預浸體,其係將如請求項15~19中任一項之熱硬化性樹脂組成物含浸於纖維基材中而成。 A prepreg obtained by impregnating a thermosetting resin composition according to any one of claims 15 to 19 into a fibrous base material. 一種多層印刷配線板,其係由如請求項15~19中任一項之熱硬化性樹脂組成物之硬化物形成絕緣層而成。 A multilayer printed wiring board obtained by forming an insulating layer from a cured product of the thermosetting resin composition according to any one of claims 15 to 19. 一種零件安裝基板,其係由如請求項15~19中任一項之熱硬化性樹脂組成物之硬化物形成絕緣層而成。 A component mounting substrate obtained by forming an insulating layer from a cured product of the thermosetting resin composition according to any one of claims 15 to 19. 如請求項22之零件安裝基板,其中零件為半導體晶片、中介片或被動元件。 The component mounting substrate of claim 22, wherein the component is a semiconductor wafer, an interposer or a passive component. 如請求項23之零件安裝基板,其中零件為半導體晶片。 The component mounting substrate of claim 23, wherein the component is a semiconductor wafer.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI674044B (en) * 2016-10-04 2019-10-01 南韓商Kcf科技有限公司 Flexible copper clad laminate and method of manufacturing the same

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11004792B2 (en) 2018-09-28 2021-05-11 Intel Corporation Microelectronic device including fiber-containing build-up layers
CN109454955B (en) * 2018-12-19 2021-07-06 广东生益科技股份有限公司 Packaging carrier tape base material and preparation method thereof
JP7363041B2 (en) * 2019-02-08 2023-10-18 住友ベークライト株式会社 Prepreg, printed wiring boards, and semiconductor devices

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH072829B2 (en) * 1987-11-04 1995-01-18 株式会社日立製作所 Laminate
JP4792706B2 (en) * 2003-04-03 2011-10-12 旭硝子株式会社 Silica glass containing TiO2 and method for producing the same
JP4983228B2 (en) 2005-11-29 2012-07-25 味の素株式会社 Resin composition for insulating layer of multilayer printed wiring board
JP5256681B2 (en) * 2007-10-05 2013-08-07 住友ベークライト株式会社 Semiconductor device, printed wiring board for semiconductor device, and copper-clad laminate
JP2010087013A (en) * 2008-09-29 2010-04-15 Kyocera Chemical Corp Method for manufacturing inter-layer insulating sheet, built-up multilayer substrate, and circuit board
TWI477549B (en) 2009-02-06 2015-03-21 Ajinomoto Kk Resin composition
JP5703570B2 (en) * 2010-03-01 2015-04-22 住友ベークライト株式会社 Prepreg, laminated board, multilayer printed wiring board, and semiconductor device
WO2012176424A1 (en) * 2011-06-21 2012-12-27 住友ベークライト株式会社 Method for manufacturing laminated plate
KR20140038519A (en) * 2011-06-21 2014-03-28 스미토모 베이클리트 컴퍼니 리미티드 Laminated plate manufacturing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI674044B (en) * 2016-10-04 2019-10-01 南韓商Kcf科技有限公司 Flexible copper clad laminate and method of manufacturing the same

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