TW201513391A - Light emitting diode - Google Patents
Light emitting diode Download PDFInfo
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- TW201513391A TW201513391A TW102136298A TW102136298A TW201513391A TW 201513391 A TW201513391 A TW 201513391A TW 102136298 A TW102136298 A TW 102136298A TW 102136298 A TW102136298 A TW 102136298A TW 201513391 A TW201513391 A TW 201513391A
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- Prior art keywords
- emitting diode
- light
- quantum dot
- light emitting
- diode chip
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- 239000002096 quantum dot Substances 0.000 claims abstract description 61
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000005022 packaging material Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims description 19
- 239000002245 particle Substances 0.000 claims description 11
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical class [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 7
- 239000000843 powder Substances 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 238000001228 spectrum Methods 0.000 description 8
- 238000005538 encapsulation Methods 0.000 description 4
- 229910007709 ZnTe Inorganic materials 0.000 description 2
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 1
- -1 CdPo Inorganic materials 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910004262 HgTe Inorganic materials 0.000 description 1
- 229910017680 MgTe Inorganic materials 0.000 description 1
- 229910002665 PbTe Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Luminescent Compositions (AREA)
Abstract
Description
本發明涉及一種發光二極體，特別涉及一種包含量子點的白光發光二極體。The invention relates to a light-emitting diode, in particular to a white light-emitting diode comprising quantum dots.
發光二極體作為一種新的光源，目前已廣泛應用於多種場合。多年來白光發光二極體大多採用在基板底部設置藍光發光二極體晶片，然後採用包含黃色螢光粉的封裝材料封裝而成，其原理是利用藍光發光二極體晶片發出的一部分藍光用於激發黃色螢光粉發出黃光，另一部分藍光與螢光粉發出的黃光混光形成白光，最終製成白光發光二極體。As a new light source, light-emitting diodes have been widely used in many applications. For many years, white light-emitting diodes have been mostly provided with a blue light-emitting diode chip at the bottom of the substrate, and then packaged with a package material containing yellow phosphor powder. The principle is to use a part of blue light emitted by the blue light-emitting diode chip for the blue light-emitting diode. The yellow fluorescent powder is excited to emit yellow light, and the other blue light is mixed with the yellow light emitted by the fluorescent powder to form white light, and finally a white light emitting diode is formed.
然而，習知的採用藍光和黃光混光為白光的封裝方式造成白光頻譜的缺陷，這是因為紅光的頻譜太弱，導致色彩飽和度低，只能達到NTSC標準的70％，當照射多彩物品時，會欠缺部分色階，導致不能真實的呈現多彩物品的色彩。However, the conventional method of encapsulating blue light and yellow light for white light causes a defect in the white light spectrum. This is because the spectrum of red light is too weak, resulting in low color saturation, which can only reach 70% of the NTSC standard. In the case of colorful items, some color gradations are lacking, resulting in the inability to actually present the colors of colorful items.
本發明旨在提供一種發光二極體以克服上述缺陷。The present invention is directed to providing a light emitting diode to overcome the above drawbacks.
一種發光二極體，包括一具有電路結構和反射杯的基板、發光二極體晶片和封裝材料，發光二極體晶片設置於基板的反射杯的底部且與基板的電路結構電連接，封裝材料設置在所述基板的反射杯內並包覆發光二極體晶片。所述發光二極體晶片為一藍光發光二極體晶片，所述發光二極體還包括一設置於封裝材料之上的量子點薄膜，所述量子點薄膜包含兩個透明片材，以及設置在兩個透明片材之間的第一型量子點和第二型量子點，所述第一型量子點受到藍光激發發出紅光，所述第二型量子點受到藍光激發發出綠光。A light emitting diode comprising a substrate having a circuit structure and a reflective cup, a light emitting diode chip and a packaging material, wherein the light emitting diode chip is disposed at a bottom of the reflective cup of the substrate and electrically connected to the circuit structure of the substrate, the packaging material It is disposed in the reflective cup of the substrate and covers the light emitting diode wafer. The light emitting diode chip is a blue light emitting diode chip, and the light emitting diode further comprises a quantum dot film disposed on the packaging material, the quantum dot film comprises two transparent sheets, and the setting A first type of quantum dot and a second type of quantum dot between two transparent sheets, the first type of quantum dot is excited by blue light to emit red light, and the second type of quantum dot is excited by blue light to emit green light.
本發明所提供的發光二極體，在基板的凹槽底部設置藍光發光二極體晶片，以透明封裝材料封裝發光二極體晶片，然後在封裝材料之上設置包含第一型量子點和第二型量子點的量子點薄膜。由於通過控制量子點薄膜中的量子點的粒徑，可以很精準地控制量子點受藍光激發而發出的紅光和綠光的頻譜，因此綜合藍光發光二極體晶片發出的藍光後，得到三色頻譜完整的白光。本發明所提供的發光二極體在照射多彩物品時，色彩飽和度可以達到NTSC標準的100％，讓多彩物品的色彩更真實的呈現。In the light emitting diode provided by the present invention, a blue light emitting diode chip is disposed at the bottom of the groove of the substrate, the light emitting diode chip is encapsulated by a transparent packaging material, and then the first type quantum dot and the first type are disposed on the packaging material. A quantum dot film of a type II quantum dot. Since the spectrum of the quantum dots in the quantum dot film can be controlled to precisely control the spectrum of the red and green light emitted by the quantum dots excited by the blue light, the blue light emitted by the blue light emitting diode chip is integrated to obtain three The white spectrum of the complete spectrum. When the light-emitting diode provided by the invention irradiates a colorful object, the color saturation can reach 100% of the NTSC standard, and the color of the colorful item is more realistic.
圖1為本發明提供的發光二極體的示意圖。FIG. 1 is a schematic view of a light emitting diode provided by the present invention.
下面將結合附圖，對本發明作進一步的詳細說明。The invention will be further described in detail below with reference to the accompanying drawings.
請參閱圖1，本發明提供一種發光二極體，所述發光二極體包含一具有電路結構111和反射杯112的基板11、發光二極體晶片12、封裝材料13和量子點薄膜14。Referring to FIG. 1 , the present invention provides a light emitting diode comprising a substrate 11 having a circuit structure 111 and a reflective cup 112 , a light emitting diode wafer 12 , an encapsulating material 13 , and a quantum dot film 14 .
所述發光二極體晶片12設置於基板11的反射杯112的底部，並且所述發光二極體晶片12與基板11的電路結構111電連接。所述發光二極體晶片12為藍光發光二極體晶片12。The light emitting diode chip 12 is disposed at the bottom of the reflective cup 112 of the substrate 11 , and the light emitting diode wafer 12 is electrically connected to the circuit structure 111 of the substrate 11 . The light emitting diode chip 12 is a blue light emitting diode chip 12.
所述封裝材料13設置在基板11的反射杯112內，並且包覆所述發光二極體晶片12。所述封裝材料13為透明封裝材料。所述封裝材料13可選擇環氧樹脂、矽膠或聚甲基丙烯酸甲酯等材料。所述封裝材料13中不包含螢光粉或者量子點。The encapsulation material 13 is disposed in the reflective cup 112 of the substrate 11 and encapsulates the LED substrate 12 . The encapsulating material 13 is a transparent encapsulating material. The encapsulating material 13 may be selected from materials such as epoxy resin, silicone rubber or polymethyl methacrylate. The encapsulating material 13 does not contain phosphor powder or quantum dots.
所述量子點薄膜14設置於封裝材料13之上。所述量子點薄膜14包含第一透明片材141和第二透明片材142，在所述第一透明片材141和第二透明片材142之間均勻的設置有第一型和第二型量子點20。所述第一透明片材141和第二透明片材142為硬質材料，可以理解的是，所述第一透明片材141和第二透明片材142亦可以為柔性材料。The quantum dot film 14 is disposed on the encapsulation material 13. The quantum dot film 14 includes a first transparent sheet 141 and a second transparent sheet 142, and a first type and a second type are uniformly disposed between the first transparent sheet 141 and the second transparent sheet 142. Quantum dot 20. The first transparent sheet 141 and the second transparent sheet 142 are hard materials. It can be understood that the first transparent sheet 141 and the second transparent sheet 142 may also be flexible materials.
具體的，首先，提供一第一透明片材141，在所述第一透明片材141上均勻的設置量子點20，提供一第二透明片材142覆蓋於所述量子點20之上。然後，採用加熱的方法使得所述第一透明片材141和第二透明片材142貼合以得到量子點薄膜14，並且所述量子點20位於第一透明片材141和第二透明片材142之間。最後，將量子點薄膜14設置於封裝材料13之上。需要說明的是，本發明採用的封裝材料13具有熱固化性或紫外固化性，可以在所述封裝材料13固化之前將量子點薄膜14黏附於封裝材料13之上，待封裝材料13固化後，量子點薄膜14固著於封裝材料13之上。Specifically, first, a first transparent sheet 141 is provided, and quantum dots 20 are uniformly disposed on the first transparent sheet 141 to provide a second transparent sheet 142 overlying the quantum dots 20. Then, the first transparent sheet 141 and the second transparent sheet 142 are attached by heating to obtain a quantum dot film 14, and the quantum dots 20 are located on the first transparent sheet 141 and the second transparent sheet. Between 142. Finally, the quantum dot film 14 is placed on the encapsulation material 13. It should be noted that the encapsulating material 13 used in the present invention has thermal curability or ultraviolet curability, and the quantum dot film 14 can be adhered to the encapsulating material 13 before the encapsulating material 13 is cured. The quantum dot film 14 is fixed on the encapsulation material 13.
所述量子點20的材質可選擇CdS、CdSe、CdTe、CdPo、ZnS、ZnSe、ZnTe、ZnTe、ZnPo、MgS、MgSe、MgTe、PbSe、PbS、PbTe、HgS、HgSe、HgTe、CdS1-x Sex 、BaTiO3 、PbZrO3 、PbZnx Ti1-x O3 、SrTiO3 、LaMnO3 、CaMnO3 和La1-x CaxMnO3 中的一種或者幾種的配合。所述量子點20的平均粒徑小於15nm。The material of the quantum dot 20 may be selected from CdS, CdSe, CdTe, CdPo, ZnS, ZnSe, ZnTe, ZnTe, ZnPo, MgS, MgSe, MgTe, PbSe, PbS, PbTe, HgS, HgSe, HgTe, CdS 1-x Se. x, BaTiO 3, PbZrO 3, PbZn x Ti 1-x O 3, SrTiO 3, LaMnO 3, one kind of 3 CaMnO 3 and La 1-x CaxMnO or several mating. The quantum dots 20 have an average particle diameter of less than 15 nm.
所述量子點20在受到藍色發光二極體晶片12發出的藍光的激發下，能產生螢光，更重要的是，不同粒徑的量子點20在藍光的激發可以產生不同波長的光線，也即量子點20發出光線的波長與量子點20的粒徑有關，所述第一型量子點20受到藍光激發時發出紅光，所述第二型量子點20受到藍光激發時發出綠光。舉例來說，第一型量子點20為平均粒徑為9-11nm的CdSe量子點20，受到藍光激發時發出紅光，第二型量子點20為平均粒徑為4-6nm的CdSe量子點20，受到藍光激發時發出綠光。The quantum dots 20 can generate fluorescence under the excitation of blue light emitted by the blue light-emitting diode wafer 12. More importantly, the quantum dots 20 of different particle sizes can generate light of different wavelengths when excited by blue light. That is, the wavelength of the light emitted by the quantum dot 20 is related to the particle diameter of the quantum dot 20, which emits red light when excited by blue light, and emits green light when excited by the blue light. For example, the first type quantum dot 20 is a CdSe quantum dot 20 having an average particle diameter of 9-11 nm, and emits red light when excited by blue light, and the second type quantum dot 20 is a CdSe quantum dot having an average particle diameter of 4-6 nm. 20, emits green light when excited by blue light.
優選的，第一型量子點20為平均粒徑為10nm的CdSe量子點20。第二型量子點20為平均粒徑為5nm的CdSe量子點20。Preferably, the first type quantum dots 20 are CdSe quantum dots 20 having an average particle diameter of 10 nm. The second type quantum dot 20 is a CdSe quantum dot 20 having an average particle diameter of 5 nm.
本發明所提供的發光二極體，由於通過控制量子點薄膜14中的量子點20的粒徑，可以很精準地控制量子點20受藍光激發而發出的紅光和綠光的頻譜，因此綜合藍光發光二極體晶片12發出的藍光後，得到三色頻譜完整的白光。本發明所提供的發光二極體在照射多彩物品時，色彩飽和度可以達到NTSC標準的100％，讓多彩物品的色彩更真實的呈現。In the light-emitting diode provided by the present invention, since the particle diameter of the quantum dot 20 in the quantum dot film 14 is controlled, the spectrum of the red light and the green light emitted by the quantum dot 20 by the blue light can be precisely controlled, and thus the synthesis After the blue light emitted by the blue light emitting diode chip 12, a white light with a complete three-color spectrum is obtained. When the light-emitting diode provided by the invention irradiates a colorful object, the color saturation can reach 100% of the NTSC standard, and the color of the colorful item is more realistic.
本發明之技術內容及技術特點已揭示如上，然而熟悉本項技術之人士仍可能基於本發明之教示及揭示而作種種不背離本發明精神之替換及修飾。因此，本發明之保護範圍應不限於實施例所揭示者，而應包括各種不背離本發明之替換及修飾，並為以下之申請專利範圍所涵蓋。The technical and technical features of the present invention have been disclosed as above, and those skilled in the art can still make various substitutions and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the present invention should be construed as being limited by the scope of the appended claims
11‧‧‧基板11‧‧‧Substrate
111‧‧‧電路結構111‧‧‧Circuit structure
112‧‧‧反射杯112‧‧‧Reflection Cup
12‧‧‧發光二極體晶片12‧‧‧Light Emitter Wafer
13‧‧‧封裝材料13‧‧‧Packaging materials
14‧‧‧量子點薄膜14‧‧‧Quantum dot film
141‧‧‧第一透明片材141‧‧‧First transparent sheet
142‧‧‧第二透明片材142‧‧‧Second transparent sheet
20‧‧‧量子點20‧‧ ‧ quantum dots
無no
11‧‧‧基板 11‧‧‧Substrate
111‧‧‧電路結構 111‧‧‧Circuit structure
112‧‧‧反射杯 112‧‧‧Reflection Cup
12‧‧‧發光二極體晶片 12‧‧‧Light Emitter Wafer
13‧‧‧封裝材料 13‧‧‧Packaging materials
14‧‧‧量子點薄膜 14‧‧‧Quantum dot film
141‧‧‧第一透明片材 141‧‧‧First transparent sheet
142‧‧‧第二透明片材 142‧‧‧Second transparent sheet
20‧‧‧量子點 20‧‧ ‧ quantum dots
Claims (5)
The light-emitting diode according to claim 3, wherein the second-type quantum dots are CdSe quantum dots having an average particle diameter of 4-6 nm.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310450500.0A CN104518072B (en) | 2013-09-29 | 2013-09-29 | Light emitting diode |
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| Publication Number | Publication Date |
|---|---|
| TW201513391A true TW201513391A (en) | 2015-04-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102136298A TW201513391A (en) | 2013-09-29 | 2013-10-08 | Light emitting diode |
Country Status (2)
| Country | Link |
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| CN (1) | CN104518072B (en) |
| TW (1) | TW201513391A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104900787A (en) * | 2015-04-15 | 2015-09-09 | 上海大学 | Assembly type quantum dot light emitting device |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106299075B (en) * | 2015-05-18 | 2019-06-25 | 青岛海信电器股份有限公司 | A kind of quantum dot light emitting element, backlight module and display device |
| CN106299054B (en) * | 2015-05-18 | 2019-01-15 | 青岛海信电器股份有限公司 | A kind of quantum dot light emitting element, backlight module and display device |
| CN104993038B (en) * | 2015-05-26 | 2018-06-12 | 武汉华星光电技术有限公司 | Light-emitting device |
| CN106353923A (en) * | 2016-11-25 | 2017-01-25 | 江苏华功第三代半导体产业技术研究院有限公司 | Backlight source |
| CN114333614A (en) * | 2020-09-28 | 2022-04-12 | 京东方科技集团股份有限公司 | Display panel and display device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080173886A1 (en) * | 2006-05-11 | 2008-07-24 | Evident Technologies, Inc. | Solid state lighting devices comprising quantum dots |
| US8455898B2 (en) * | 2011-03-28 | 2013-06-04 | Osram Sylvania Inc. | LED device utilizing quantum dots |
| TW201332156A (en) * | 2012-01-17 | 2013-08-01 | Nan Ya Photonics Inc | Solid state lighting device |
-
2013
- 2013-09-29 CN CN201310450500.0A patent/CN104518072B/en active Active
- 2013-10-08 TW TW102136298A patent/TW201513391A/en unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104900787A (en) * | 2015-04-15 | 2015-09-09 | 上海大学 | Assembly type quantum dot light emitting device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104518072B (en) | 2017-12-05 |
| CN104518072A (en) | 2015-04-15 |
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