JP6728869B2 - Light emitting device - Google Patents

Light emitting device Download PDF

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JP6728869B2
JP6728869B2 JP2016064427A JP2016064427A JP6728869B2 JP 6728869 B2 JP6728869 B2 JP 6728869B2 JP 2016064427 A JP2016064427 A JP 2016064427A JP 2016064427 A JP2016064427 A JP 2016064427A JP 6728869 B2 JP6728869 B2 JP 6728869B2
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light emitting
emitting element
sealing material
light
phosphor
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JP2017152666A (en
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矢嶋　孝義
孝義 矢嶋
伊藤　浩史
浩史 伊藤
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Toyoda Gosei Co Ltd
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Description

本発明は、発光装置に関する。 The present invention relates to a light emitting device.

従来、ＬＥＤ（Light Emitting Diode）と蛍光体を備え、白色光を発する発光装置が知られている（例えば、特許文献１、２参照）。このような発光装置においては、ＬＥＤと蛍光体の合成発光スペクトルが白色光のスペクトルを形成している。 2. Description of the Related Art Conventionally, a light emitting device that includes an LED (Light Emitting Diode) and a phosphor and emits white light is known (see, for example, Patent Documents 1 and 2). In such a light emitting device, the combined emission spectrum of the LED and the phosphor forms a white light spectrum.

国際公開第２０１２／１０８０６５号International Publication No. 2012/108065 国際公開第２０１２／１４４０８７号International Publication No. 2012/144087

しかしながら、蛍光体はその特性上、吸収スペクトルと発光スペクトルの波長域が離れている。このため、励起光の吸収効率を高くするためには、蛍光体の発光スペクトルから離れた発光波長を有する発光素子を励起光源として用いざるを得ない。 However, due to the characteristics of the phosphor, the wavelength bands of the absorption spectrum and the emission spectrum are separated. Therefore, in order to increase the absorption efficiency of the excitation light, a light emitting element having an emission wavelength far from the emission spectrum of the phosphor has to be used as the excitation light source.

このため、発光素子と蛍光体の合成発光スペクトルであって、昼光色等の特に色温度の高い青白い白色のスペクトルにおいては、発光素子の発光波長と蛍光体の発光波長との間に深い窪み（ディップ）が存在する。このような深いディップの存在は、発光装置の発光スペクトルを太陽光（自然光）のスペクトルに近づけることの障害になる。 Therefore, in the combined emission spectrum of the light-emitting element and the phosphor, particularly in the white-white spectrum having a high color temperature such as daylight color, a deep depression (dip) between the emission wavelength of the light-emitting element and the emission wavelength of the phosphor ) Exists. The presence of such a deep dip is an obstacle to bringing the emission spectrum of the light emitting device close to the spectrum of sunlight (natural light).

本発明の目的の一つは、ディップが浅く、太陽光に近い発光スペクトルを有する発光装置を提供することにある。 One of the objects of the present invention is to provide a light emitting device having a shallow dip and an emission spectrum close to that of sunlight.

本発明の一態様は、上記目的を達成するために、下記［１］〜［７］の発光装置を提供する。 In order to achieve the above object, one aspect of the present invention provides a light emitting device of the following [1] to [7].

［１］紫又は紫外領域で第１の発光スペクトルの光を出射する第１の発光素子と、青領域で第２の発光スペクトルの光を発する青色蛍光体と、前記第１の発光スペクトルと前記第２の発光スペクトルとによって形成される合成発光スペクトルの、紫又は紫外領域のピーク波長と青領域のピーク波長の間にピーク波長を有する第３の発光スペクトルの光を出射する第２の発光素子と、を有し、前記第２の発光素子が出射する前記第３の発光スペクトルの光は、光通信用信号によって変調される、発光装置。 [1] and the first light emitting element with ultraviolet or ultraviolet region emitting a first light emission spectrum, a blue phosphor emitting a second light emission spectrum in the blue region, and the first emission spectrum the A second light emitting element that emits light of a third emission spectrum having a peak wavelength between the peak wavelength of the purple or ultraviolet region and the peak wavelength of the blue region of the combined emission spectrum formed by the second emission spectrum. When having a second light emitting element is light of the third emission spectrum emitted is modulated by signal for optical communication, a light-emitting device.

［２］前記第２の発光素子のピーク波長の前記最も深いディップの底の波長からのずれが２ｎｍ以内である、上記［１］に記載の発光装置。 [2] The light emitting device according to the above [1], wherein a deviation of a peak wavelength of the second light emitting element from a wavelength of the bottom of the deepest dip is within 2 nm.

［３］前記第２の発光素子が、異なる波長を有する複数の発光素子で構成される、上記［１］に記載の発光装置。 [3] The light emitting device according to the above [1], wherein the second light emitting element is composed of a plurality of light emitting elements having different wavelengths.

［４］前記第１の発光素子を封止する第１の封止材と、前記第２の発光素子を封止する第２の封止材と、をさらに有し、前記蛍光体が、前記第１の封止材に含まれる、上記［１］〜［３］のいずれか１項に記載の発光装置。 [4] The phosphor further includes a first encapsulant for encapsulating the first light-emitting element and a second encapsulant for encapsulating the second light-emitting element. The light-emitting device according to any one of [1] to [3], which is included in the first sealing material.

［５］前記第１の封止材と前記第２の封止材が接しており、前記第１の封止材の屈折率が、前記第２の封止材の屈折率よりも低い、上記［４］に記載の発光装置。 [5] The first sealing material and the second sealing material are in contact with each other, and the refractive index of the first sealing material is lower than the refractive index of the second sealing material. The light emitting device according to [ 4 ] .

［６］前記第１の封止材と前記第２の封止材が接しており、前記第１の封止材と前記第２の封止材の一方が環状の平面形状を有する環状封止材であり、他方が前記環状封止材に囲まれた封止材である、上記［４］又は［５］に記載の発光装置。 [6] An annular sealing in which the first sealing material and the second sealing material are in contact with each other, and one of the first sealing material and the second sealing material has an annular planar shape. The light emitting device according to the above [ 4 ] or [ 5 ], which is a material and the other is a sealing material surrounded by the annular sealing material.

［７］前記蛍光体は、緑色蛍光体及び赤色蛍光体を更に含み、前記第２の発光素子は、前記ディップとして最も深いディップを形成する、前記第１の発光素子のピークと前記青色蛍光体のピークのピーク波長の間のピーク波長を有する、上記［１］〜［６］のいずれか１項に記載の発光装置。 [7] The phosphor further includes a green phosphor and a red phosphor, and the second light emitting element forms the deepest dip as the dip. The peak of the first light emitting element and the blue phosphor. The light emitting device according to any one of [1] to [6] above, which has a peak wavelength between the peak wavelengths of the peaks .

本発明によれば、ディップが浅く、太陽光に近い発光スペクトルを有する発光装置を提供することができる。 According to the present invention, it is possible to provide a light emitting device having a shallow dip and an emission spectrum close to that of sunlight.

図１（ａ）は実施の形態に係る発光装置の上面図である。図１（ｂ）は、図１（ａ）の線分Ａ−Ａにおいて切断された発光装置の垂直断面図である。FIG. 1A is a top view of the light emitting device according to the embodiment. FIG. 1B is a vertical cross-sectional view of the light emitting device taken along the line segment AA of FIG. 図２（ａ）、（ｂ）は、第１の発光素子と蛍光体の合成発光スペクトルの例を示す。FIGS. 2A and 2B show examples of combined emission spectra of the first light emitting element and the phosphor. 図３（ａ）は、実施の形態に係る発光装置の変形例の上面図である。図３（ｂ）は、図３（ａ）の線分Ｂ−Ｂにおいて切断された発光装置の垂直断面図である。FIG. 3A is a top view of a modification of the light emitting device according to the embodiment. FIG. 3B is a vertical cross-sectional view of the light emitting device taken along the line BB of FIG. 3A. 図４（ａ）〜（ｃ）は、実施の形態に係る発光装置の製造工程を表す垂直断面図である。4A to 4C are vertical cross-sectional views showing a manufacturing process of the light emitting device according to the embodiment. 図５は、パターン形成された第１の封止材を基板に貼り合わせる場合の、貼り合わせ前の第１の封止材を示す斜視図である。FIG. 5 is a perspective view showing the first sealing material before bonding when the patterned first sealing material is bonded to the substrate. 図６（ａ）〜（ｄ）は、実施の形態に係る発光装置の製造工程の変形例を表す垂直断面図である。6A to 6D are vertical cross-sectional views showing a modified example of the manufacturing process of the light emitting device according to the embodiment. 図７（ａ）は、発光素子と蛍光体の電気信号の周波数に対する応答性の違いを概略的に示すグラフである。図７（ｂ）は、発光素子と蛍光体の応答速度の違いを概略的に示すグラフである。FIG. 7A is a graph schematically showing the difference in the responsivity of the light emitting element and the phosphor with respect to the frequency of the electric signal. FIG. 7B is a graph schematically showing the difference in response speed between the light emitting element and the phosphor.

〔実施の形態〕
（発光装置の構成）
図１（ａ）は、実施の形態に係る発光装置１の上面図である。図１（ｂ）は、図１（ａ）の線分Ａ−Ａにおいて切断された発光装置１の垂直断面図である。 [Embodiment]
(Structure of light emitting device)
FIG. 1A is a top view of the light emitting device 1 according to the embodiment. FIG. 1B is a vertical cross-sectional view of the light emitting device 1 taken along the line segment AA in FIG.

発光装置１は、基板１０と、基板１０上に設置された第１の発光素子１１及び第２の発光素子１２と、第１の発光素子１１を封止する第１の封止材１３と、第２の発光素子１２を封止する第２の封止材１４と、第１の封止材１３に含まれる粒子状の蛍光体１５と、を有する。 The light emitting device 1 includes a substrate 10, a first light emitting element 11 and a second light emitting element 12 that are installed on the substrate 10, and a first sealing material 13 that seals the first light emitting element 11. It has the 2nd sealing material 14 which seals the 2nd light emitting element 12, and the particulate fluorescent substance 15 contained in the 1st sealing material 13.

第１の発光素子１１は、蛍光体１５の励起光源として機能し、第１の発光素子１１の発光色と蛍光体１５の発光色の混色が白色になる。また、蛍光体１５は波長の異なる複数種の蛍光体から構成されてもよい。この場合、第１の発光素子１１として紫外光を発する発光素子が用いられ、複数の蛍光体の発光色の混色が白色になる構成であってもよい。 The first light emitting element 11 functions as an excitation light source for the phosphor 15, and the color mixture of the light emitting color of the first light emitting element 11 and the light emitting color of the phosphor 15 becomes white. Further, the phosphor 15 may be composed of a plurality of types of phosphors having different wavelengths. In this case, a light emitting element that emits ultraviolet light may be used as the first light emitting element 11, and the color mixture of the emission colors of the plurality of phosphors may be white.

第２の発光素子１２は、第１の発光素子１１と蛍光体１５の合成発光スペクトルにおける最も深いディップを埋めて、発光装置１の発光スペクトルを太陽光の発光スペクトルに近づけるために用いられる。 The second light emitting element 12 is used to fill the deepest dip in the combined light emission spectrum of the first light emitting element 11 and the phosphor 15 to bring the light emission spectrum of the light emitting device 1 closer to the light emission spectrum of sunlight.

このため、第２の発光素子１２は、第１の発光素子１１と蛍光体１５の合成発光スペクトルにおいて最も深いディップを形成する２つのピークのピーク波長（ピークの頂点の波長）の間のピーク波長を有する。そして、第２の発光素子１２のピーク波長の、最も深いディップの底の波長からのずれが、２ｎｍ以内であることが好ましい。 Therefore, the second light-emitting element 12 has a peak wavelength between two peak wavelengths (wavelengths at the peak peaks) that form the deepest dip in the combined emission spectrum of the first light-emitting element 11 and the phosphor 15. Have. The deviation of the peak wavelength of the second light emitting element 12 from the wavelength of the bottom of the deepest dip is preferably within 2 nm.

第２の発光素子１２は、異なる波長を有する複数の発光素子で構成されてもよい。この場合、第２の発光素子１２を構成する全ての発光素子のピーク波長が、上記の最も深いディップを形成する２つのピークのピーク波長の間のピーク波長を有する。 The second light emitting element 12 may be composed of a plurality of light emitting elements having different wavelengths. In this case, the peak wavelengths of all the light emitting elements forming the second light emitting element 12 have a peak wavelength between the peak wavelengths of the two peaks forming the deepest dip.

図２（ａ）、（ｂ）は、第１の発光素子１１と蛍光体１５の合成発光スペクトルの例を示す。 FIGS. 2A and 2B show examples of combined emission spectra of the first light emitting element 11 and the phosphor 15.

図２（ａ）は、第１の発光素子１１が発光波長４５０ｎｍの青色ＬＥＤであり、蛍光体１５がＬｕ３Ａｌ５Ｏ１２：Ｃｅ３＋からなる緑色蛍光体と、Ｙ３Ａｌ５Ｏ１２：Ｃｅ３＋からなる黄色蛍光体と、ＣａＡｌＳｉＮ３：Ｅｕ２＋からなる赤色蛍光体である場合の合成スペクトルである。 In FIG. 2A, the first light emitting element 11 is a blue LED with an emission wavelength of 450 nm, the phosphor 15 is a green phosphor made of Lu 3 Al 5 O 12 :Ce 3+ , and Y 3 Al 5 O 12 : a yellow phosphor comprising a ce 3+, CaAlSiN 3: is a synthetic spectrum when a red phosphor consisting of Eu 2+.

図２（ａ）に示される第１の発光素子１１と蛍光体１５の合成発光スペクトルにおける最も深いディップの底（矢印で示される）の波長はおよそ４８１ｎｍである。また、最も深いディップを形成する２つのピークのうちの、短波長側のピーク（第１の発光素子１１の発光スペクトルのピーク）のピーク波長はおよそ４５２ｎｍであり、長波長側のピーク（蛍光体１５の発光スペクトルのピーク）のピーク波長はおよそ５７７ｎｍである。 The wavelength of the bottom of the deepest dip (indicated by an arrow) in the combined emission spectrum of the first light emitting element 11 and the phosphor 15 shown in FIG. 2A is about 481 nm. Further, of the two peaks forming the deepest dip, the peak wavelength on the short wavelength side (the peak of the emission spectrum of the first light emitting element 11) is about 452 nm, and the peak on the long wavelength side (phosphor The peak wavelength of the emission spectrum of 15) is about 577 nm.

この場合、ピーク波長が４５２ｎｍより大きく、５７７ｎｍよりも小さい範囲Ｒ内にある発光素子が第２の発光素子１２として用いられ、ピーク波長が４８１ｎｍからのずれが２ｎｍ以内、すなわち４７９ｎｍ以上４８３ｎｍ以下である発光素子が第２の発光素子１２として用いられることが好ましい。また、第２の発光素子１２として、複数の発光波長の異なる発光素子が用いられる場合は、いずれの発光素子のピーク波長も範囲Ｒ内にある。 In this case, a light emitting element having a peak wavelength in a range R larger than 452 nm and smaller than 577 nm is used as the second light emitting element 12, and the peak wavelength deviates from 481 nm within 2 nm, that is, 479 nm or more and 483 nm or less. A light emitting element is preferably used as the second light emitting element 12. When a plurality of light emitting elements having different emission wavelengths are used as the second light emitting element 12, the peak wavelengths of all the light emitting elements are within the range R.

図２（ｂ）は、第１の発光素子１１が発光波長４０５ｎｍの紫色ＬＥＤであり、蛍光体１５が（Ｓｒ，Ｃａ，Ｂａ）１０（ＰＯ４）Ｃｌ２：Ｅｕ２＋からなる青色蛍光体と、（Ｓｉ，Ａｌ）６（Ｏ，Ｎ）８：Ｅｕ２＋からなる緑色蛍光体と、ＣａＡｌＳｉＮ３：Ｅｕ２＋からなる赤色蛍光体である場合の合成スペクトルである。 In FIG. 2B, the first light emitting element 11 is a purple LED having an emission wavelength of 405 nm, and the phosphor 15 is a blue phosphor composed of (Sr,Ca,Ba) 10 (PO 4 )Cl 2 :Eu 2+. , (Si,Al) 6 (O,N) 8 :Eu 2+ is a green phosphor and CaAlSiN 3 :Eu 2+ is a red phosphor.

図２（ｂ）に示される第１の発光素子１１と蛍光体１５の合成発光スペクトルにおける最も深いディップの底（矢印で示される）の波長はおよそ４２２ｎｍである。また、最も深いディップを形成する２つのピークのうちの、短波長側のピーク（第１の発光素子１１の発光スペクトルのピーク）のピーク波長はおよそ４０２ｎｍであり、長波長側のピーク（蛍光体１５の発光スペクトルのピーク）のピーク波長はおよそ４５４ｎｍである。 The wavelength of the bottom of the deepest dip (indicated by an arrow) in the combined emission spectrum of the first light emitting element 11 and the phosphor 15 shown in FIG. 2B is about 422 nm. Of the two peaks that form the deepest dip, the peak wavelength on the short wavelength side (the peak of the emission spectrum of the first light emitting element 11) is about 402 nm, and the peak on the long wavelength side (the phosphor). The peak wavelength of the emission spectrum of 15) is about 454 nm.

この場合、ピーク波長が４０２ｎｍより大きく、４５４ｎｍよりも小さい範囲Ｒ内にある発光素子が第２の発光素子１２として用いられ、ピーク波長が４２２ｎｍからのずれが２ｎｍ以内、すなわち４２０ｎｍ以上４２４ｎｍ以下である発光素子が第２の発光素子１２として用いられることが好ましい。また、第２の発光素子１２として、複数の発光波長の異なる発光素子が用いられる場合は、いずれの発光素子のピーク波長も範囲Ｒ内にある。 In this case, a light emitting element having a peak wavelength in a range R larger than 402 nm and smaller than 454 nm is used as the second light emitting element 12, and the peak wavelength deviates from 422 nm within 2 nm, that is, 420 nm or more and 424 nm or less. A light emitting element is preferably used as the second light emitting element 12. When a plurality of light emitting elements having different emission wavelengths are used as the second light emitting element 12, the peak wavelengths of all the light emitting elements are within the range R.

蛍光体１５は、第１の封止材１３と第２の封止材１４の両方に含まれていてもよいが、第２の封止材１４に含まれている場合、第２の発光素子１２の発する光の蛍光体１５による吸収量が増えるため、上述の最も深いディップを埋めるための第２の発光素子１２の発光波長や発光強度の設定が困難になる。このため、蛍光体１５は、第１の封止材１３にのみ含まれることが好ましい。 The phosphor 15 may be included in both the first encapsulant 13 and the second encapsulant 14, but when included in the second encapsulant 14, the second light emitting element is included. Since the amount of absorption of the light emitted by 12 by the phosphor 15 increases, it becomes difficult to set the emission wavelength and emission intensity of the second light emitting element 12 to fill the deepest dip described above. Therefore, it is preferable that the phosphor 15 is included only in the first sealing material 13.

第１の封止材１３と第２の封止材１４が接している場合、第１の封止材１３の屈折率が、第２の封止材１４の屈折率よりも低いことが好ましい。この場合、光が第２の封止材１４から第１の封止材１３へ透過しにくくなるため、第２の発光素子１２から発せられた光の第１の封止材１３に含まれる蛍光体１５による吸収量を抑えることができる。 When the first sealing material 13 and the second sealing material 14 are in contact with each other, the refractive index of the first sealing material 13 is preferably lower than the refractive index of the second sealing material 14. In this case, since it becomes difficult for light to pass from the second sealing material 14 to the first sealing material 13, the fluorescence emitted from the second light emitting element 12 is included in the first sealing material 13. The amount absorbed by the body 15 can be suppressed.

基板１０は、例えば、配線基板やリードフレームインサート基板である。 The board 10 is, for example, a wiring board or a lead frame insert board.

第１の発光素子１１及び第２の発光素子１２は、例えば、チップ基板と、発光層及びそれを挟むクラッド層を含む結晶層とを有するＬＥＤチップである。第１の発光素子１１及び第２の発光素子１２は、結晶層が上方を向いたフェイスアップ型のＬＥＤチップであってもよいし、結晶層が下方を向いたフェイスダウン型のＬＥＤチップであってもよい。また、レーザーダイオード等のＬＥＤチップ以外の発光素子であってもよい。 The first light emitting element 11 and the second light emitting element 12 are, for example, LED chips having a chip substrate and a crystal layer including a light emitting layer and a clad layer sandwiching the light emitting layer. The first light emitting element 11 and the second light emitting element 12 may be a face-up type LED chip in which the crystal layer faces upward, or a face-down type LED chip in which the crystal layer faces downward. May be. Further, it may be a light emitting element other than the LED chip such as a laser diode.

第１の発光素子１１及び第２の発光素子１２は、基板１０に含まれる配線やリードフレーム等の図示しない導電部材に接続され、その導電部材を介して第１の発光素子１１及び第２の発光素子１２にそれぞれ独立して電源が供給される。 The first light emitting element 11 and the second light emitting element 12 are connected to a conductive member (not shown) such as wiring or a lead frame included in the substrate 10, and the first light emitting element 11 and the second light emitting element 12 are connected via the conductive member. Power is supplied to each light emitting element 12 independently.

第１の封止樹脂１３及び第２の封止樹脂１４は、例えば、シリコーン系樹脂やエポキシ系樹脂等の透明樹脂からなる。 The first sealing resin 13 and the second sealing resin 14 are made of, for example, a transparent resin such as a silicone resin or an epoxy resin.

また、第１の発光素子１１と第２の発光素子１２には、それぞれ独立して電源が供給されるため、それぞれの発光強度を任意に調節することができる。このため、発光装置１の発光スペクトルをより太陽光に近づけることができる。 Further, since power is supplied to the first light emitting element 11 and the second light emitting element 12 independently of each other, it is possible to arbitrarily adjust the light emission intensity of each. Therefore, the emission spectrum of the light emitting device 1 can be made closer to sunlight.

なお、第１の発光素子１１及び第２の発光素子１２の個数、配置等、第１の封止材１３及び第２の封止材１４の個数、形状、配置等は、特に限定されない。 Note that the number, shape, arrangement, etc. of the first sealing material 13 and the second sealing material 14, such as the number and arrangement of the first light emitting element 11 and the second light emitting element 12, are not particularly limited.

図１に示される本実施の形態の発光装置の構成例では、第１の封止材１３は環状の平面形状を有する環状封止材であり、第２の封止材１４は環状の第１の封止材１３に囲まれている。 In the configuration example of the light emitting device of the present embodiment shown in FIG. 1, the first sealing material 13 is an annular sealing material having an annular planar shape, and the second sealing material 14 is an annular first sealing material. It is surrounded by the sealing material 13.

図３（ａ）は、図１に示される発光装置１における第１の発光素子１１と第２の発光素子１２の配置を逆に、かつ第１の封止材１３と第２の封止材１４の配置を逆にした構成を有する発光装置２の上面図である。図３（ｂ）は、図３（ａ）の線分Ｂ−Ｂおいて切断された発光装置１の垂直断面図である。 FIG. 3A shows the first light emitting element 11 and the second light emitting element 12 in the light emitting device 1 shown in FIG. 14 is a top view of the light emitting device 2 having a configuration in which the arrangement of 14 is reversed. FIG. FIG. 3B is a vertical cross-sectional view of the light emitting device 1 taken along the line BB of FIG. 3A.

図３に示される本実施の形態の発光装置の構成例では、第２の封止材１４は環状の平面形状を有する環状封止材であり、第１の封止材１３は環状の第２の封止材１４に囲まれている。なお、図３に示される構成に、さらに、第１の封止材１３と同じ材料からなり、第１の発光素子１１を封止する環状の封止材であって、環状の第２の封止材１４を囲む封止材を加えてもよい。さらに、その第１の発光素子１１を封止する環状の封止材を囲むように、第２の封止材１４と同じ材料からなり、第２の発光素子１２を封止する環状の封止材を形成してもよい。このように交互に設けられる第１の発光素子１１を封止する環状の封止材と第２の発光素子１２を封止する環状の封止材の個数は限定されない。 In the configuration example of the light emitting device of the present embodiment shown in FIG. 3, the second sealing material 14 is an annular sealing material having an annular planar shape, and the first sealing material 13 is an annular second sealing material. It is surrounded by the sealing material 14. It should be noted that in addition to the configuration shown in FIG. 3, a ring-shaped sealing material made of the same material as the first sealing material 13 and sealing the first light emitting element 11 is used. A sealing material surrounding the stopper 14 may be added. Further, a ring-shaped sealing member made of the same material as the second sealing member 14 so as to surround the ring-shaped sealing member that seals the first light-emitting element 11, and seals the second light-emitting element 12 The material may be formed. The number of annular sealing materials that seal the first light emitting element 11 and the annular sealing material that seal the second light emitting element 12 that are alternately provided in this manner is not limited.

例えば、第２の発光素子１２が異なる波長を有する複数の発光素子で構成される場合は、発光装置２の構成のような複数の第２の発光素子１２が含まれる構成が採用される。 For example, when the second light emitting element 12 is composed of a plurality of light emitting elements having different wavelengths, a structure including a plurality of second light emitting elements 12 like the structure of the light emitting device 2 is adopted.

（発光装置の製造工程）
以下に、発光装置１の製造工程の一例を示す。 (Manufacturing process of light emitting device)
Hereinafter, an example of a manufacturing process of the light emitting device 1 will be described.

図４（ａ）〜（ｃ）は、実施の形態に係る発光装置１の製造工程を表す垂直断面図である。 4A to 4C are vertical cross-sectional views showing a manufacturing process of the light emitting device 1 according to the embodiment.

まず、図４（ａ）に示されるように、基板１０上に第１の発光素子１１及び第２の発光素子１２を設置する。 First, as shown in FIG. 4A, the first light emitting element 11 and the second light emitting element 12 are placed on the substrate 10.

次に、図４（ｂ）に示されるように、蛍光体１５を含む第１の封止材１３で第１の発光素子１１を封止する。第１の封止材１３は、予めパターン形成された第１の封止材１３を基板１０に貼り合わせる方法や、ポッティングにより形成される。 Next, as shown in FIG. 4B, the first light emitting element 11 is sealed with the first sealing material 13 containing the phosphor 15. The first sealing material 13 is formed by a method in which the first sealing material 13 having a pattern formed in advance is attached to the substrate 10 or by potting.

図５は、パターン形成された第１の封止材１３を基板１０に貼り合わせる場合の、貼り合わせ前の第１の封止材１３を示す斜視図である。第１の封止材１３は、ＰＥＴ等からなるシート状の基材２０上にパターン形成されている。 FIG. 5 is a perspective view showing the first sealing material 13 before the bonding when the patterned first sealing material 13 is bonded to the substrate 10. The first sealing material 13 is patterned on a sheet-shaped substrate 20 made of PET or the like.

次に、図４（ｃ）に示されるように、ポッティングにより、第１の封止材１３に囲まれた領域に樹脂を埋め込み、第２の封止材１４を形成する。 Next, as shown in FIG. 4C, resin is embedded in the region surrounded by the first sealing material 13 by potting to form the second sealing material 14.

図６（ａ）〜（ｄ）は、実施の形態に係る発光装置１の製造工程の変形例を表す垂直断面図である。この変形例は、図４（ａ）〜（ｃ）に示される製造工程と比較して、第１の封止材１３と第２の封止材１４を形成する順序が逆である。 6A to 6D are vertical cross-sectional views showing a modified example of the manufacturing process of the light emitting device 1 according to the embodiment. In this modified example, the order of forming the first sealing material 13 and the second sealing material 14 is opposite to that of the manufacturing process shown in FIGS. 4A to 4C.

まず、図６（ａ）に示されるように、基板１０上に第１の発光素子１１及び第２の発光素子１２を設置する。 First, as shown in FIG. 6A, the first light emitting element 11 and the second light emitting element 12 are placed on the substrate 10.

次に、図６（ｂ）に示されるように、第２の封止材１４で第２の発光素子１２を封止する。第２の封止材１４は、予めパターン形成された第２の封止材１４を基板１０に貼り合わせる方法や、ポッティングにより形成される。 Next, as shown in FIG. 6B, the second light emitting element 12 is sealed with the second sealing material 14. The second sealing material 14 is formed by a method in which the second sealing material 14 having a pattern formed in advance is attached to the substrate 10 or by potting.

次に、図６（ｃ）に示されるように、第１の発光素子１１の設置領域を取り囲むように環状のダム１６を形成する。ダム１６は、例えば、シリコーン系樹脂やエポキシ系樹脂等の樹脂からなり、酸化チタン等の白色染料を含んでもよい。 Next, as shown in FIG. 6C, an annular dam 16 is formed so as to surround the installation region of the first light emitting element 11. The dam 16 is made of, for example, a resin such as a silicone resin or an epoxy resin, and may include a white dye such as titanium oxide.

次に、図６（ｄ）に示されるように、ポッティングにより、ダム１６と第２の封止材１４の間の領域に蛍光体１５を含む樹脂を埋め込み、第１の封止材１３を形成する。ダム１６の形成は省いてもよいが、ダム１６を形成することにより、ポッティングにより形成される第１の封止材１３の形状の制御が容易になる。 Next, as shown in FIG. 6D, the resin containing the phosphor 15 is embedded in the region between the dam 16 and the second sealing material 14 by potting to form the first sealing material 13. To do. The formation of the dam 16 may be omitted, but the formation of the dam 16 facilitates control of the shape of the first sealing material 13 formed by potting.

なお、上述の発光装置２を製造する場合には、図４（ａ）〜（ｃ）、図６（ａ）〜（ｄ）に示される工程における第１の発光素子１１と第２の発光素子１２についての工程を逆に、かつ第１の封止材１３と第２の封止材１４についての工程を逆にすればよい。 When manufacturing the light emitting device 2 described above, the first light emitting element 11 and the second light emitting element in the steps shown in FIGS. 4A to 4C and 6A to 6D. The process for 12 may be reversed, and the process for the first sealing material 13 and the second sealing material 14 may be reversed.

（発光装置の変形例）
以下、発光装置１を光通信システムの光送信器として用いる例について説明する。 (Modification of light emitting device)
Hereinafter, an example in which the light emitting device 1 is used as an optical transmitter of an optical communication system will be described.

第２の発光素子１２を光通信用の送信部として用いることができる。通信用に高速変調された信号を、例えば、発光装置１の外部の制御部から第２の発光素子１２に送り、その信号に基づいて第２の発光素子１２を発光させて通信を行う。この場合、発光装置１は、照明かつ送受信システムの光送信器として機能する。 The second light emitting element 12 can be used as a transmitter for optical communication. A high-speed modulated signal for communication is sent to the second light emitting element 12 from, for example, an external control unit of the light emitting device 1, and the second light emitting element 12 emits light based on the signal to perform communication. In this case, the light emitting device 1 functions as an illumination and an optical transmitter of the transmission/reception system.

この光通信の光検出器（受信部）としては、例えば、Ｓｉフォトダイオードや、スマートフォンに標準で搭載されるカメラ等のイメージセンサーが用いられる。具体的な実施例としては、例えば、発光装置１は店舗において用いられるダウンライトであり、第２の発光素子１２を用いた通信により、顧客の有するスマートフォンに商品情報を送信する。 As the photodetector (reception unit) of this optical communication, for example, an Si photodiode or an image sensor such as a camera mounted as a standard on a smartphone is used. As a specific example, for example, the light emitting device 1 is a downlight used in a store, and transmits product information to a smartphone owned by a customer by communication using the second light emitting element 12.

第１の発光素子１１の発光波長、すなわち蛍光体１５の励起波長が紫又は紫外領域の波長である場合、図２（ｂ）に示されるように、第２の発光素子１２の発光波長は４２０ｎｍ前後と視感度の低い領域にあるため、第２の発光素子１２を用いることにより光強度が変動しても目へのちらつき等の影響はほとんどなく、照明機能への影響を抑えた上で通信用の光信号を重ねることができる。 When the emission wavelength of the first light emitting element 11, that is, the excitation wavelength of the phosphor 15 is a wavelength in the purple or ultraviolet region, the emission wavelength of the second light emitting element 12 is 420 nm, as shown in FIG. 2B. Since it is in the front and back and in a region with low luminosity, even if the light intensity changes by using the second light emitting element 12, there is almost no effect such as flickering on the eyes, and communication is performed while suppressing the effect on the illumination function. Optical signals for can be superimposed.

図７（ａ）は、ＬＥＤチップである発光素子と蛍光体の電気信号の周波数に対する応答性の違いを概略的に示すグラフである。図７（ａ）に示されるように、発光素子が電気信号に対して応答できる限界の周波数よりも、その発光素子の発する光により励起される蛍光体の応答できる限界の周波数の方が低い。すなわち、蛍光体の方が発光素子よりもカットオフ周波数が低い。これは、蛍光体の方が発光素子よりも応答速度が遅く、通信に向かないことを示している。 FIG. 7A is a graph schematically showing the difference in the responsivity of the light emitting element, which is the LED chip, and the phosphor with respect to the frequency of the electric signal. As shown in FIG. 7A, the limit frequency at which the phosphor excited by the light emitted from the light emitting element can respond is lower than the limit frequency at which the light emitting element can respond to an electric signal. That is, the cutoff frequency of the phosphor is lower than that of the light emitting element. This indicates that the phosphor has a slower response speed than the light emitting element and is not suitable for communication.

図７（ｂ）は、ＬＥＤチップである発光素子と蛍光体の応答速度の違いを概略的に示すグラフである。図７（ｂ）に示されるように、蛍光体の波形は、発光素子の波形と比べて電気信号の波形から大きく崩れて光信号のノイズとなるため、通信に向かない。 FIG. 7B is a graph schematically showing the difference in response speed between the light emitting element which is an LED chip and the phosphor. As shown in FIG. 7( b ), the waveform of the fluorescent substance is significantly distorted from the waveform of the electric signal as compared with the waveform of the light emitting element and becomes noise of the optical signal, which is not suitable for communication.

このような理由から、通信用の第２の発光素子１２の発光に蛍光体の蛍光が混ざると通信の精度が下がるため、蛍光体１５を含まない第２の封止材１４に封止された第２の発光素子１２を通信用に用いることが好ましい。 For this reason, the accuracy of communication decreases when the fluorescence of the phosphor is mixed with the light emitted from the second light-emitting element 12 for communication, and thus the second sealing material 14 that does not include the phosphor 15 is used for sealing. It is preferable to use the second light emitting element 12 for communication.

（実施の形態の効果）
上記の実施の形態によれば、第１の発光素子１１と蛍光体１５の合成発光スペクトルにおける最も深いディップを埋めるための第２の発光素子１２を用いることにより、太陽光に近い発光スペクトルを有する発光装置１を提供することができる。また、第２の発光素子１２を光通信用の送信部として用いることもできる。 (Effects of the embodiment)
According to the above-described embodiment, by using the second light emitting element 12 for filling the deepest dip in the combined light emitting spectrum of the first light emitting element 11 and the phosphor 15, a light emitting spectrum close to sunlight is obtained. The light emitting device 1 can be provided. Also, the second light emitting element 12 can be used as a transmitter for optical communication.

以上、本発明の実施の形態を説明したが、本発明は、上記の実施の形態に限定されず、発明の主旨を逸脱しない範囲内において種々変形実施が可能である。また、発明の主旨を逸脱しない範囲内において上記実施の形態の構成要素を任意に組み合わせることができる。 Although the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the spirit of the invention. Further, the constituent elements of the above-described embodiments can be arbitrarily combined without departing from the spirit of the invention.

例えば、第１の発光素子１１と蛍光体１５の合成発光スペクトルにおける最も深いディップが、２つの蛍光体１５のピークにより形成されている場合、すなわち、最も短波長側にあるディップ以外のディップが最も深い場合であっても、上記実施の形態を適用することができる。この場合であっても、最も深いディップを埋めることのできる発光波長を有する発光素子が第２の発光素子１２として用いられる。 For example, when the deepest dip in the combined emission spectrum of the first light emitting element 11 and the phosphor 15 is formed by the peaks of the two phosphors 15, that is, the dip other than the dip on the shortest wavelength side is the most. The above-described embodiment can be applied even when the depth is deep. Even in this case, a light emitting element having an emission wavelength capable of filling the deepest dip is used as the second light emitting element 12.

また、上記の実施の形態は特許請求の範囲に係る発明を限定するものではない。また、実施の形態の中で説明した特徴の組合せの全てが発明の課題を解決するための手段に必須であるとは限らない点に留意すべきである。 Further, the above embodiment does not limit the invention according to the claims. Further, it should be noted that not all combinations of the features described in the embodiments are essential to the means for solving the problems of the invention.

１ 発光装置
１０ 基板
１１ 第１の発光素子
１２ 第２の発光素子
１３ 第１の封止樹脂
１４ 第２の封止樹脂
１５ 蛍光体 1 Light-Emitting Device 10 Substrate 11 First Light-Emitting Element 12 Second Light-Emitting Element 13 First Sealing Resin 14 Second Sealing Resin 15 Phosphor

Claims (7)

紫又は紫外領域で第１の発光スペクトルの光を出射する第１の発光素子と、
青領域で第２の発光スペクトルの光を発する青色蛍光体と、
前記第１の発光スペクトルと前記第２の発光スペクトルとによって形成される合成発光スペクトルの、紫又は紫外領域のピーク波長と青領域のピーク波長の間にピーク波長を有する第３の発光スペクトルの光を出射する第２の発光素子と、を有し、
前記第２の発光素子が出射する前記第３の発光スペクトルの光は、光通信用信号によって変調される、発光装置。 A first light emitting element for emitting a first light emission spectrum in ultraviolet or ultraviolet region,
A blue phosphor that emits light of the second emission spectrum in the blue region ,
Light of the third emission spectrum having a peak wavelength between the peak wavelength of the purple or ultraviolet region and the peak wavelength of the blue region of the synthetic emission spectrum formed by the first emission spectrum and the second emission spectrum. A second light emitting element that emits
The light of the third emission spectrum the second light-emitting element is emitted is modulated by signal for optical communication, a light-emitting device. 前記第２の発光素子のピーク波長の、前記合成発光スペクトルにおける紫又は紫外領域のピークと青領域のピークの間のディップの底の波長からのずれが２ｎｍ以内である、
請求項１に記載の発光装置。 The deviation of the peak wavelength of the second light-emitting element from the wavelength of the bottom of the dip between the peak in the purple or ultraviolet region and the peak in the blue region in the combined emission spectrum is within 2 nm.
The light emitting device according to claim 1. 前記第２の発光素子が、異なる波長を有する複数の発光素子で構成される、
請求項１に記載の発光装置。 The second light emitting element is composed of a plurality of light emitting elements having different wavelengths,
The light emitting device according to claim 1. 前記第１の発光素子を封止する第１の封止材と、
前記第２の発光素子を封止する第２の封止材と、
をさらに有し、
前記蛍光体が、前記第１の封止材に含まれる、
請求項１〜３のいずれか１項に記載の発光装置。 A first sealing material that seals the first light emitting element;
A second sealing material that seals the second light emitting element;
Further has
The phosphor is included in the first sealing material,
The light emitting device according to claim 1. 前記第１の封止材と前記第２の封止材が接しており、
前記第１の封止材の屈折率が、前記第２の封止材の屈折率よりも低い、
請求項４に記載の発光装置。 The first sealing material and the second sealing material are in contact with each other,
The refractive index of the first sealing material is lower than the refractive index of the second sealing material,
The light emitting device according to claim 4. 前記第１の封止材と前記第２の封止材が接しており、
前記第１の封止材と前記第２の封止材の一方が環状の平面形状を有する環状封止材であり、他方が前記環状封止材に囲まれた封止材である、
請求項４又は５に記載の発光装置。 The first sealing material and the second sealing material are in contact with each other,
One of the first sealing material and the second sealing material is an annular sealing material having an annular planar shape, and the other is a sealing material surrounded by the annular sealing material,
The light emitting device according to claim 4. 前記蛍光体は、緑色蛍光体及び赤色蛍光体を更に含む、
請求項１〜６のいずれか１項に記載の発光装置。 The phosphor further including a green phosphor and a red phosphor,
The light emitting device according to any one of 請 Motomeko 1-6.
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