JP2017152666A - Light-emitting device - Google Patents

Light-emitting device Download PDF

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JP2017152666A
JP2017152666A JP2016064427A JP2016064427A JP2017152666A JP 2017152666 A JP2017152666 A JP 2017152666A JP 2016064427 A JP2016064427 A JP 2016064427A JP 2016064427 A JP2016064427 A JP 2016064427A JP 2017152666 A JP2017152666 A JP 2017152666A
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light emitting
emitting element
sealing material
light
emitting device
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JP6728869B2 (en
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矢嶋 孝義
Takayoshi Yajima
孝義 矢嶋
伊藤 浩史
Hiroshi Ito
浩史 伊藤
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Toyoda Gosei Co Ltd
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Toyoda Gosei Co Ltd
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Abstract

PROBLEM TO BE SOLVED: To provide a light-emitting device with a shallow dip, which has light emission spectra close to those of solar light.SOLUTION: A light-emitting device 1 according to an embodiment of the present invention comprises: a first light-emitting element 11; a phosphor 15; and a second light-emitting element 12 having a peak wavelength between peak wavelengths of two peaks forming the deepest dip in combined light emission spectra of the first light-emitting element 11 and phosphor 15.SELECTED DRAWING: Figure 2

Description

本発明は、発光装置に関する。   The present invention relates to a light emitting device.

従来、LED(Light Emitting Diode)と蛍光体を備え、白色光を発する発光装置が知られている(例えば、特許文献1、2参照)。このような発光装置においては、LEDと蛍光体の合成発光スペクトルが白色光のスペクトルを形成している。   2. Description of the Related Art Conventionally, a light emitting device that includes an LED (Light Emitting Diode) and a phosphor and emits white light is known (see, for example, Patent Documents 1 and 2). In such a light emitting device, the combined emission spectrum of the LED and the phosphor forms a white light spectrum.

国際公開第2012/108065号International Publication No. 2012/108065 国際公開第2012/144087号International Publication No. 2012/144087

しかしながら、蛍光体はその特性上、吸収スペクトルと発光スペクトルの波長域が離れている。このため、励起光の吸収効率を高くするためには、蛍光体の発光スペクトルから離れた発光波長を有する発光素子を励起光源として用いざるを得ない。   However, due to the characteristics of phosphors, the wavelength ranges of the absorption spectrum and the emission spectrum are separated. For this reason, in order to increase the absorption efficiency of excitation light, a light emitting element having an emission wavelength far from the emission spectrum of the phosphor must be used as the excitation light source.

このため、発光素子と蛍光体の合成発光スペクトルであって、昼光色等の特に色温度の高い青白い白色のスペクトルにおいては、発光素子の発光波長と蛍光体の発光波長との間に深い窪み(ディップ)が存在する。このような深いディップの存在は、発光装置の発光スペクトルを太陽光(自然光)のスペクトルに近づけることの障害になる。   For this reason, in a synthetic emission spectrum of a light emitting element and a phosphor, and a pale white spectrum having a particularly high color temperature such as daylight color, a deep depression (dip) is formed between the emission wavelength of the light emitting element and the emission wavelength of the phosphor. ) Exists. The presence of such a deep dip becomes an obstacle to bringing the emission spectrum of the light emitting device close to the spectrum of sunlight (natural light).

本発明の目的の一つは、ディップが浅く、太陽光に近い発光スペクトルを有する発光装置を提供することにある。   One of the objects of the present invention is to provide a light-emitting device having a light emission spectrum with a shallow dip and close to sunlight.

本発明の一態様は、上記目的を達成するために、下記[1]〜[7]の発光装置を提供する。   One embodiment of the present invention provides the following light-emitting devices [1] to [7] in order to achieve the above object.

[1]第1の発光素子と、蛍光体と、前記第1の発光素子と前記蛍光体の合成発光スペクトルにおいて最も深いディップを形成する2つのピークのピーク波長の間のピーク波長を有する第2の発光素子と、を有する発光装置。 [1] A first light emitting element, a phosphor, and a second wavelength having a peak wavelength between two peak wavelengths forming the deepest dip in the combined emission spectrum of the first light emitting element and the phosphor. A light emitting device.

[2]前記第2の発光素子のピーク波長の前記最も深いディップの底の波長からのずれが2nm以内である、上記[1]に記載の発光装置。 [2] The light emitting device according to the above [1], wherein a deviation of a peak wavelength of the second light emitting element from a wavelength at a bottom of the deepest dip is within 2 nm.

[3]前記第2の発光素子が、異なる波長を有する複数の発光素子で構成される、上記[1]に記載の発光装置。 [3] The light emitting device according to [1], wherein the second light emitting element includes a plurality of light emitting elements having different wavelengths.

[4]前記第1の発光素子を封止する第1の封止材と、前記第2の発光素子を封止する第2の封止材と、をさらに有し、前記蛍光体が、前記第1の封止材に含まれる、上記[1]〜[3]のいずれか1項に記載の発光装置。 [4] A first sealing material that seals the first light-emitting element and a second sealing material that seals the second light-emitting element, and the phosphor includes: The light emitting device according to any one of [1] to [3], which is included in the first sealing material.

[5]前記第1の封止材と前記第2の封止材が接しており、前記第1の封止材の屈折率が、前記第2の封止材の屈折率よりも低い、上記[1]〜[4]のいずれか1項に記載の発光装置。 [5] The first sealing material is in contact with the second sealing material, and the refractive index of the first sealing material is lower than the refractive index of the second sealing material. The light emitting device according to any one of [1] to [4].

[6]前記第1の封止材と前記第2の封止材が接しており、前記第1の封止材と前記第2の封止材の一方が環状の平面形状を有する環状封止材であり、他方が前記環状封止材に囲まれた封止材である、上記[1]〜[5]のいずれか1項に記載の発光装置。 [6] An annular seal in which the first sealing material and the second sealing material are in contact, and one of the first sealing material and the second sealing material has an annular planar shape. The light emitting device according to any one of [1] to [5], wherein the light emitting device is a material and the other is a sealing material surrounded by the annular sealing material.

[7]前記第2の発光素子を光通信の送信部として用いる、上記[1]〜[6]のいずれか1項に記載の発光装置。 [7] The light-emitting device according to any one of [1] to [6], wherein the second light-emitting element is used as a transmission unit for optical communication.

本発明によれば、ディップが浅く、太陽光に近い発光スペクトルを有する発光装置を提供することができる。   According to the present invention, it is possible to provide a light emitting device that has a shallow dip and has an emission spectrum close to that of sunlight.

図1(a)は実施の形態に係る発光装置の上面図である。図1(b)は、図1(a)の線分A−Aにおいて切断された発光装置の垂直断面図である。FIG. 1A is a top view of the light emitting device according to the embodiment. FIG. 1B is a vertical cross-sectional view of the light-emitting device cut along the line AA in FIG. 図2(a)、(b)は、第1の発光素子と蛍光体の合成発光スペクトルの例を示す。2A and 2B show examples of a synthetic emission spectrum of the first light emitting element and the phosphor. 図3(a)は、実施の形態に係る発光装置の変形例の上面図である。図3(b)は、図3(a)の線分B−Bにおいて切断された発光装置の垂直断面図である。FIG. 3A is a top view of a modification of the light emitting device according to the embodiment. FIG. 3B is a vertical cross-sectional view of the light-emitting device cut along the line BB in FIG. 図4(a)〜(c)は、実施の形態に係る発光装置の製造工程を表す垂直断面図である。4A to 4C are vertical sectional views showing manufacturing steps of the light emitting device according to the embodiment. 図5は、パターン形成された第1の封止材を基板に貼り合わせる場合の、貼り合わせ前の第1の封止材を示す斜視図である。FIG. 5 is a perspective view showing the first sealing material before bonding when the patterned first sealing material is bonded to a substrate. 図6(a)〜(d)は、実施の形態に係る発光装置の製造工程の変形例を表す垂直断面図である。6A to 6D are vertical cross-sectional views illustrating modifications of the manufacturing process of the light emitting device according to the embodiment. 図7(a)は、発光素子と蛍光体の電気信号の周波数に対する応答性の違いを概略的に示すグラフである。図7(b)は、発光素子と蛍光体の応答速度の違いを概略的に示すグラフである。FIG. 7A is a graph schematically showing a difference in responsiveness with respect to the frequency of the electric signal between the light emitting element and the phosphor. FIG. 7B is a graph schematically showing a difference in response speed between the light emitting element and the phosphor.

〔実施の形態〕
(発光装置の構成)
図1(a)は、実施の形態に係る発光装置1の上面図である。図1(b)は、図1(a)の線分A−Aにおいて切断された発光装置1の垂直断面図である。
Embodiment
(Configuration of light emitting device)
FIG. 1A is a top view of the light emitting device 1 according to the embodiment. FIG. 1B is a vertical cross-sectional view of the light emitting device 1 cut along the line AA in FIG.

発光装置1は、基板10と、基板10上に設置された第1の発光素子11及び第2の発光素子12と、第1の発光素子11を封止する第1の封止材13と、第2の発光素子12を封止する第2の封止材14と、第1の封止材13に含まれる粒子状の蛍光体15と、を有する。   The light emitting device 1 includes a substrate 10, a first light emitting element 11 and a second light emitting element 12 installed on the substrate 10, a first sealing material 13 for sealing the first light emitting element 11, It has the 2nd sealing material 14 which seals the 2nd light emitting element 12, and the particulate-form fluorescent substance 15 contained in the 1st sealing material 13. FIG.

第1の発光素子11は、蛍光体15の励起光源として機能し、第1の発光素子11の発光色と蛍光体15の発光色の混色が白色になる。また、蛍光体15は波長の異なる複数種の蛍光体から構成されてもよい。この場合、第1の発光素子11として紫外光を発する発光素子が用いられ、複数の蛍光体の発光色の混色が白色になる構成であってもよい。   The first light emitting element 11 functions as an excitation light source for the phosphor 15, and the color mixture of the emission color of the first light emitting element 11 and the emission color of the phosphor 15 becomes white. Moreover, the fluorescent substance 15 may be comprised from several types of fluorescent substance from which a wavelength differs. In this case, a light emitting element that emits ultraviolet light may be used as the first light emitting element 11, and the mixed color of the light emission colors of the plurality of phosphors may be white.

第2の発光素子12は、第1の発光素子11と蛍光体15の合成発光スペクトルにおける最も深いディップを埋めて、発光装置1の発光スペクトルを太陽光の発光スペクトルに近づけるために用いられる。   The second light-emitting element 12 is used to fill the deepest dip in the combined emission spectrum of the first light-emitting element 11 and the phosphor 15 and to bring the emission spectrum of the light-emitting device 1 closer to the emission spectrum of sunlight.

このため、第2の発光素子12は、第1の発光素子11と蛍光体15の合成発光スペクトルにおいて最も深いディップを形成する2つのピークのピーク波長(ピークの頂点の波長)の間のピーク波長を有する。そして、第2の発光素子12のピーク波長の、最も深いディップの底の波長からのずれが、2nm以内であることが好ましい。   For this reason, the second light emitting element 12 has a peak wavelength between two peak wavelengths (wavelengths at the peak apexes) that form the deepest dip in the combined emission spectrum of the first light emitting element 11 and the phosphor 15. Have The deviation of the peak wavelength of the second light emitting element 12 from the wavelength at the bottom of the deepest dip is preferably within 2 nm.

第2の発光素子12は、異なる波長を有する複数の発光素子で構成されてもよい。この場合、第2の発光素子12を構成する全ての発光素子のピーク波長が、上記の最も深いディップを形成する2つのピークのピーク波長の間のピーク波長を有する。   The second light emitting element 12 may be composed of a plurality of light emitting elements having different wavelengths. In this case, the peak wavelengths of all the light emitting elements constituting the second light emitting element 12 have a peak wavelength between the peak wavelengths of the two peaks forming the deepest dip.

図2(a)、(b)は、第1の発光素子11と蛍光体15の合成発光スペクトルの例を示す。   2A and 2B show examples of a synthetic emission spectrum of the first light emitting element 11 and the phosphor 15.

図2(a)は、第1の発光素子11が発光波長450nmの青色LEDであり、蛍光体15がLuAl12:Ce3+からなる緑色蛍光体と、YAl12:Ce3+からなる黄色蛍光体と、CaAlSiN:Eu2+からなる赤色蛍光体である場合の合成スペクトルである。 2A, the first light-emitting element 11 is a blue LED having an emission wavelength of 450 nm, the phosphor 15 is a green phosphor made of Lu 3 Al 5 O 12 : Ce 3+ , and Y 3 Al 5 O 12 : It is a synthetic spectrum in the case of a yellow phosphor made of Ce 3+ and a red phosphor made of CaAlSiN 3 : Eu 2+ .

図2(a)に示される第1の発光素子11と蛍光体15の合成発光スペクトルにおける最も深いディップの底(矢印で示される)の波長はおよそ481nmである。また、最も深いディップを形成する2つのピークのうちの、短波長側のピーク(第1の発光素子11の発光スペクトルのピーク)のピーク波長はおよそ452nmであり、長波長側のピーク(蛍光体15の発光スペクトルのピーク)のピーク波長はおよそ577nmである。   The wavelength of the bottom of the deepest dip (indicated by an arrow) in the combined emission spectrum of the first light emitting element 11 and the phosphor 15 shown in FIG. 2A is approximately 481 nm. Of the two peaks forming the deepest dip, the peak wavelength on the short wavelength side (the peak of the emission spectrum of the first light emitting element 11) is about 452 nm, and the peak on the long wavelength side (phosphor) The peak wavelength of 15 emission spectra is approximately 577 nm.

この場合、ピーク波長が452nmより大きく、577nmよりも小さい範囲R内にある発光素子が第2の発光素子12として用いられ、ピーク波長が481nmからのずれが2nm以内、すなわち479nm以上483nm以下である発光素子が第2の発光素子12として用いられることが好ましい。また、第2の発光素子12として、複数の発光波長の異なる発光素子が用いられる場合は、いずれの発光素子のピーク波長も範囲R内にある。   In this case, a light emitting element having a peak wavelength larger than 452 nm and within a range R smaller than 777 nm is used as the second light emitting element 12, and the deviation from the peak wavelength of 481 nm is within 2 nm, that is, 479 nm to 483 nm. It is preferable that a light emitting element is used as the second light emitting element 12. When a plurality of light emitting elements having different light emission wavelengths are used as the second light emitting element 12, the peak wavelength of any light emitting element is within the range R.

図2(b)は、第1の発光素子11が発光波長405nmの紫色LEDであり、蛍光体15が(Sr,Ca,Ba)10(PO)Cl:Eu2+からなる青色蛍光体と、(Si,Al)(O,N):Eu2+からなる緑色蛍光体と、CaAlSiN:Eu2+からなる赤色蛍光体である場合の合成スペクトルである。 In FIG. 2B, the first light-emitting element 11 is a violet LED having an emission wavelength of 405 nm, and the phosphor 15 is a blue phosphor made of (Sr, Ca, Ba) 10 (PO 4 ) Cl 2 : Eu 2+. , (Si, Al) 6 ( O, N) 8: a green phosphor made of Eu 2+, CaAlSiN 3: is a synthetic spectrum when a red phosphor consisting of Eu 2+.

図2(b)に示される第1の発光素子11と蛍光体15の合成発光スペクトルにおける最も深いディップの底(矢印で示される)の波長はおよそ422nmである。また、最も深いディップを形成する2つのピークのうちの、短波長側のピーク(第1の発光素子11の発光スペクトルのピーク)のピーク波長はおよそ402nmであり、長波長側のピーク(蛍光体15の発光スペクトルのピーク)のピーク波長はおよそ454nmである。   The wavelength of the bottom of the deepest dip (indicated by an arrow) in the combined emission spectrum of the first light emitting element 11 and the phosphor 15 shown in FIG. 2B is approximately 422 nm. Of the two peaks forming the deepest dip, the peak wavelength on the short wavelength side (peak of the emission spectrum of the first light emitting element 11) is about 402 nm, and the peak on the long wavelength side (phosphor) The peak wavelength of 15 emission spectra is approximately 454 nm.

この場合、ピーク波長が402nmより大きく、454nmよりも小さい範囲R内にある発光素子が第2の発光素子12として用いられ、ピーク波長が422nmからのずれが2nm以内、すなわち420nm以上424nm以下である発光素子が第2の発光素子12として用いられることが好ましい。また、第2の発光素子12として、複数の発光波長の異なる発光素子が用いられる場合は、いずれの発光素子のピーク波長も範囲R内にある。   In this case, a light emitting element having a peak wavelength larger than 402 nm and within a range R smaller than 454 nm is used as the second light emitting element 12, and the deviation from the peak wavelength of 422 nm is within 2 nm, that is, 420 nm or more and 424 nm or less. It is preferable that a light emitting element is used as the second light emitting element 12. When a plurality of light emitting elements having different light emission wavelengths are used as the second light emitting element 12, the peak wavelength of any light emitting element is within the range R.

蛍光体15は、第1の封止材13と第2の封止材14の両方に含まれていてもよいが、第2の封止材14に含まれている場合、第2の発光素子12の発する光の蛍光体15による吸収量が増えるため、上述の最も深いディップを埋めるための第2の発光素子12の発光波長や発光強度の設定が困難になる。このため、蛍光体15は、第1の封止材13にのみ含まれることが好ましい。   The phosphor 15 may be included in both the first sealing material 13 and the second sealing material 14, but when it is included in the second sealing material 14, the second light emitting element Since the amount of absorption of the light emitted by the phosphor 15 increases, it becomes difficult to set the emission wavelength and emission intensity of the second light emitting element 12 for filling the deepest dip. For this reason, it is preferable that the phosphor 15 is included only in the first sealing material 13.

第1の封止材13と第2の封止材14が接している場合、第1の封止材13の屈折率が、第2の封止材14の屈折率よりも低いことが好ましい。この場合、光が第2の封止材14から第1の封止材13へ透過しにくくなるため、第2の発光素子12から発せられた光の第1の封止材13に含まれる蛍光体15による吸収量を抑えることができる。   When the first sealing material 13 and the second sealing material 14 are in contact with each other, the refractive index of the first sealing material 13 is preferably lower than the refractive index of the second sealing material 14. In this case, since light is less likely to be transmitted from the second sealing material 14 to the first sealing material 13, the fluorescence contained in the first sealing material 13 of the light emitted from the second light emitting element 12. The amount of absorption by the body 15 can be suppressed.

基板10は、例えば、配線基板やリードフレームインサート基板である。   The substrate 10 is, for example, a wiring substrate or a lead frame insert substrate.

第1の発光素子11及び第2の発光素子12は、例えば、チップ基板と、発光層及びそれを挟むクラッド層を含む結晶層とを有するLEDチップである。第1の発光素子11及び第2の発光素子12は、結晶層が上方を向いたフェイスアップ型のLEDチップであってもよいし、結晶層が下方を向いたフェイスダウン型のLEDチップであってもよい。また、レーザーダイオード等のLEDチップ以外の発光素子であってもよい。   The first light emitting element 11 and the second light emitting element 12 are, for example, LED chips having a chip substrate and a crystal layer including a light emitting layer and a clad layer sandwiching the light emitting layer. The first light-emitting element 11 and the second light-emitting element 12 may be face-up type LED chips with the crystal layer facing upward, or face-down type LED chips with the crystal layer facing downward. May be. Moreover, light emitting elements other than LED chips, such as a laser diode, may be used.

第1の発光素子11及び第2の発光素子12は、基板10に含まれる配線やリードフレーム等の図示しない導電部材に接続され、その導電部材を介して第1の発光素子11及び第2の発光素子12にそれぞれ独立して電源が供給される。   The first light emitting element 11 and the second light emitting element 12 are connected to a conductive member (not shown) such as a wiring or a lead frame included in the substrate 10, and the first light emitting element 11 and the second light emitting element 12 are connected via the conductive member. Power is supplied to each light emitting element 12 independently.

第1の封止樹脂13及び第2の封止樹脂14は、例えば、シリコーン系樹脂やエポキシ系樹脂等の透明樹脂からなる。   The first sealing resin 13 and the second sealing resin 14 are made of a transparent resin such as a silicone resin or an epoxy resin, for example.

また、第1の発光素子11と第2の発光素子12には、それぞれ独立して電源が供給されるため、それぞれの発光強度を任意に調節することができる。このため、発光装置1の発光スペクトルをより太陽光に近づけることができる。   In addition, since the first light-emitting element 11 and the second light-emitting element 12 are independently supplied with power, the light emission intensity can be arbitrarily adjusted. For this reason, the emission spectrum of the light emitting device 1 can be made closer to sunlight.

なお、第1の発光素子11及び第2の発光素子12の個数、配置等、第1の封止材13及び第2の封止材14の個数、形状、配置等は、特に限定されない。   Note that the number, shape, arrangement, and the like of the first sealing material 13 and the second sealing material 14 are not particularly limited, such as the number and arrangement of the first light-emitting element 11 and the second light-emitting element 12.

図1に示される本実施の形態の発光装置の構成例では、第1の封止材13は環状の平面形状を有する環状封止材であり、第2の封止材14は環状の第1の封止材13に囲まれている。   In the configuration example of the light emitting device of this embodiment shown in FIG. 1, the first sealing material 13 is an annular sealing material having an annular planar shape, and the second sealing material 14 is an annular first material. Surrounded by the sealing material 13.

図3(a)は、図1に示される発光装置1における第1の発光素子11と第2の発光素子12の配置を逆に、かつ第1の封止材13と第2の封止材14の配置を逆にした構成を有する発光装置2の上面図である。図3(b)は、図3(a)の線分B−Bおいて切断された発光装置1の垂直断面図である。   3A shows the arrangement of the first light-emitting element 11 and the second light-emitting element 12 in the light-emitting device 1 shown in FIG. 1, and the first sealing material 13 and the second sealing material. It is a top view of the light-emitting device 2 which has the structure which reversed arrangement | positioning of 14. FIG. FIG. 3B is a vertical cross-sectional view of the light emitting device 1 cut along the line BB in FIG.

図3に示される本実施の形態の発光装置の構成例では、第2の封止材14は環状の平面形状を有する環状封止材であり、第1の封止材13は環状の第2の封止材14に囲まれている。なお、図3に示される構成に、さらに、第1の封止材13と同じ材料からなり、第1の発光素子11を封止する環状の封止材であって、環状の第2の封止材14を囲む封止材を加えてもよい。さらに、その第1の発光素子11を封止する環状の封止材を囲むように、第2の封止材14と同じ材料からなり、第2の発光素子12を封止する環状の封止材を形成してもよい。このように交互に設けられる第1の発光素子11を封止する環状の封止材と第2の発光素子12を封止する環状の封止材の個数は限定されない。   In the configuration example of the light emitting device of this embodiment shown in FIG. 3, the second sealing material 14 is an annular sealing material having an annular planar shape, and the first sealing material 13 is an annular second material. Surrounded by the sealing material 14. 3 is an annular sealing material that is made of the same material as the first sealing material 13 and seals the first light-emitting element 11, and includes an annular second sealing material. A sealing material surrounding the stopper 14 may be added. Further, the annular sealing material is made of the same material as the second sealing material 14 so as to surround the annular sealing material that seals the first light emitting element 11, and seals the second light emitting element 12. A material may be formed. The number of the annular sealing material for sealing the first light emitting elements 11 and the annular sealing material for sealing the second light emitting elements 12 that are alternately provided in this way is not limited.

例えば、第2の発光素子12が異なる波長を有する複数の発光素子で構成される場合は、発光装置2の構成のような複数の第2の発光素子12が含まれる構成が採用される。   For example, when the second light emitting element 12 includes a plurality of light emitting elements having different wavelengths, a configuration including a plurality of second light emitting elements 12 such as the configuration of the light emitting device 2 is employed.

(発光装置の製造工程)
以下に、発光装置1の製造工程の一例を示す。
(Manufacturing process of light emitting device)
Below, an example of the manufacturing process of the light-emitting device 1 is shown.

図4(a)〜(c)は、実施の形態に係る発光装置1の製造工程を表す垂直断面図である。   4A to 4C are vertical cross-sectional views illustrating manufacturing steps of the light emitting device 1 according to the embodiment.

まず、図4(a)に示されるように、基板10上に第1の発光素子11及び第2の発光素子12を設置する。   First, as shown in FIG. 4A, the first light emitting element 11 and the second light emitting element 12 are installed on the substrate 10.

次に、図4(b)に示されるように、蛍光体15を含む第1の封止材13で第1の発光素子11を封止する。第1の封止材13は、予めパターン形成された第1の封止材13を基板10に貼り合わせる方法や、ポッティングにより形成される。   Next, as shown in FIG. 4B, the first light emitting element 11 is sealed with the first sealing material 13 including the phosphor 15. The first sealing material 13 is formed by a method in which the first sealing material 13 patterned in advance is bonded to the substrate 10 or by potting.

図5は、パターン形成された第1の封止材13を基板10に貼り合わせる場合の、貼り合わせ前の第1の封止材13を示す斜視図である。第1の封止材13は、PET等からなるシート状の基材20上にパターン形成されている。   FIG. 5 is a perspective view showing the first sealing material 13 before bonding when the patterned first sealing material 13 is bonded to the substrate 10. The first sealing material 13 is patterned on a sheet-like base material 20 made of PET or the like.

次に、図4(c)に示されるように、ポッティングにより、第1の封止材13に囲まれた領域に樹脂を埋め込み、第2の封止材14を形成する。   Next, as shown in FIG. 4C, the resin is embedded in the region surrounded by the first sealing material 13 by potting to form the second sealing material 14.

図6(a)〜(d)は、実施の形態に係る発光装置1の製造工程の変形例を表す垂直断面図である。この変形例は、図4(a)〜(c)に示される製造工程と比較して、第1の封止材13と第2の封止材14を形成する順序が逆である。   6A to 6D are vertical sectional views showing a modification of the manufacturing process of the light emitting device 1 according to the embodiment. In this modified example, the order of forming the first sealing material 13 and the second sealing material 14 is reversed as compared to the manufacturing steps shown in FIGS.

まず、図6(a)に示されるように、基板10上に第1の発光素子11及び第2の発光素子12を設置する。   First, as shown in FIG. 6A, the first light emitting element 11 and the second light emitting element 12 are installed on the substrate 10.

次に、図6(b)に示されるように、第2の封止材14で第2の発光素子12を封止する。第2の封止材14は、予めパターン形成された第2の封止材14を基板10に貼り合わせる方法や、ポッティングにより形成される。   Next, as shown in FIG. 6B, the second light emitting element 12 is sealed with the second sealing material 14. The second sealing material 14 is formed by a method in which the second sealing material 14 patterned in advance is bonded to the substrate 10 or potting.

次に、図6(c)に示されるように、第1の発光素子11の設置領域を取り囲むように環状のダム16を形成する。ダム16は、例えば、シリコーン系樹脂やエポキシ系樹脂等の樹脂からなり、酸化チタン等の白色染料を含んでもよい。   Next, as shown in FIG. 6C, an annular dam 16 is formed so as to surround the installation area of the first light emitting element 11. The dam 16 is made of a resin such as a silicone resin or an epoxy resin, and may include a white dye such as titanium oxide.

次に、図6(d)に示されるように、ポッティングにより、ダム16と第2の封止材14の間の領域に蛍光体15を含む樹脂を埋め込み、第1の封止材13を形成する。ダム16の形成は省いてもよいが、ダム16を形成することにより、ポッティングにより形成される第1の封止材13の形状の制御が容易になる。   Next, as shown in FIG. 6D, a resin containing phosphor 15 is embedded in a region between the dam 16 and the second sealing material 14 by potting to form the first sealing material 13. To do. The formation of the dam 16 may be omitted, but the formation of the dam 16 makes it easy to control the shape of the first sealing material 13 formed by potting.

なお、上述の発光装置2を製造する場合には、図4(a)〜(c)、図6(a)〜(d)に示される工程における第1の発光素子11と第2の発光素子12についての工程を逆に、かつ第1の封止材13と第2の封止材14についての工程を逆にすればよい。   In the case of manufacturing the light emitting device 2 described above, the first light emitting element 11 and the second light emitting element in the steps shown in FIGS. 4A to 4C and FIGS. 6A to 6D. 12 may be reversed and the steps for the first sealing material 13 and the second sealing material 14 may be reversed.

(発光装置の変形例)
以下、発光装置1を光通信システムの光送信器として用いる例について説明する。
(Modification of light emitting device)
Hereinafter, an example in which the light emitting device 1 is used as an optical transmitter of an optical communication system will be described.

第2の発光素子12を光通信用の送信部として用いることができる。通信用に高速変調された信号を、例えば、発光装置1の外部の制御部から第2の発光素子12に送り、その信号に基づいて第2の発光素子12を発光させて通信を行う。この場合、発光装置1は、照明かつ送受信システムの光送信器として機能する。   The second light emitting element 12 can be used as a transmission unit for optical communication. For example, a signal modulated at high speed for communication is sent from the controller outside the light emitting device 1 to the second light emitting element 12, and the second light emitting element 12 is caused to emit light based on the signal to perform communication. In this case, the light emitting device 1 functions as an optical transmitter of the illumination and transmission / reception system.

この光通信の光検出器(受信部)としては、例えば、Siフォトダイオードや、スマートフォンに標準で搭載されるカメラ等のイメージセンサーが用いられる。具体的な実施例としては、例えば、発光装置1は店舗において用いられるダウンライトであり、第2の発光素子12を用いた通信により、顧客の有するスマートフォンに商品情報を送信する。   For example, an Si sensor or an image sensor such as a camera mounted on a smartphone as a standard is used as the optical communication photodetector (reception unit). As a specific example, for example, the light-emitting device 1 is a downlight used in a store, and transmits product information to a customer's smartphone by communication using the second light-emitting element 12.

第1の発光素子11の発光波長、すなわち蛍光体15の励起波長が紫又は紫外領域の波長である場合、図2(b)に示されるように、第2の発光素子12の発光波長は420nm前後と視感度の低い領域にあるため、第2の発光素子12を用いることにより光強度が変動しても目へのちらつき等の影響はほとんどなく、照明機能への影響を抑えた上で通信用の光信号を重ねることができる。   When the emission wavelength of the first light emitting element 11, that is, the excitation wavelength of the phosphor 15 is a wavelength in the purple or ultraviolet region, the emission wavelength of the second light emitting element 12 is 420 nm as shown in FIG. Because it is in the region of low visibility, front and rear, there is almost no effect such as flickering on the eyes even if the light intensity fluctuates by using the second light emitting element 12, and communication is performed while suppressing the influence on the illumination function. The optical signal can be superimposed.

図7(a)は、LEDチップである発光素子と蛍光体の電気信号の周波数に対する応答性の違いを概略的に示すグラフである。図7(a)に示されるように、発光素子が電気信号に対して応答できる限界の周波数よりも、その発光素子の発する光により励起される蛍光体の応答できる限界の周波数の方が低い。すなわち、蛍光体の方が発光素子よりもカットオフ周波数が低い。これは、蛍光体の方が発光素子よりも応答速度が遅く、通信に向かないことを示している。   FIG. 7A is a graph schematically showing a difference in responsiveness with respect to the frequency of an electric signal between a light emitting element which is an LED chip and a phosphor. As shown in FIG. 7A, the limit frequency at which the phosphor excited by the light emitted by the light emitting element can respond is lower than the limit frequency at which the light emitting element can respond to an electrical signal. That is, the cutoff frequency of the phosphor is lower than that of the light emitting element. This indicates that the phosphor has a slower response speed than the light emitting element and is not suitable for communication.

図7(b)は、LEDチップである発光素子と蛍光体の応答速度の違いを概略的に示すグラフである。図7(b)に示されるように、蛍光体の波形は、発光素子の波形と比べて電気信号の波形から大きく崩れて光信号のノイズとなるため、通信に向かない。   FIG. 7B is a graph schematically showing a difference in response speed between the light emitting element which is an LED chip and the phosphor. As shown in FIG. 7B, the waveform of the phosphor is not suitable for communication because it largely collapses from the waveform of the electric signal as compared with the waveform of the light emitting element and becomes noise of the optical signal.

このような理由から、通信用の第2の発光素子12の発光に蛍光体の蛍光が混ざると通信の精度が下がるため、蛍光体15を含まない第2の封止材14に封止された第2の発光素子12を通信用に用いることが好ましい。   For this reason, when the fluorescence of the phosphor is mixed with the light emission of the second light emitting element 12 for communication, the accuracy of communication is lowered. Therefore, the second sealing material 14 that does not include the phosphor 15 is sealed. It is preferable to use the second light emitting element 12 for communication.

(実施の形態の効果)
上記の実施の形態によれば、第1の発光素子11と蛍光体15の合成発光スペクトルにおける最も深いディップを埋めるための第2の発光素子12を用いることにより、太陽光に近い発光スペクトルを有する発光装置1を提供することができる。また、第2の発光素子12を光通信用の送信部として用いることもできる。
(Effect of embodiment)
According to the above embodiment, the second light-emitting element 12 for filling the deepest dip in the combined light emission spectrum of the first light-emitting element 11 and the phosphor 15 has an emission spectrum close to sunlight. The light emitting device 1 can be provided. Further, the second light emitting element 12 can also be used as a transmission unit for optical communication.

以上、本発明の実施の形態を説明したが、本発明は、上記の実施の形態に限定されず、発明の主旨を逸脱しない範囲内において種々変形実施が可能である。また、発明の主旨を逸脱しない範囲内において上記実施の形態の構成要素を任意に組み合わせることができる。   Although the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit of the invention. In addition, the constituent elements of the above-described embodiment can be arbitrarily combined without departing from the spirit of the invention.

例えば、第1の発光素子11と蛍光体15の合成発光スペクトルにおける最も深いディップが、2つの蛍光体15のピークにより形成されている場合、すなわち、最も短波長側にあるディップ以外のディップが最も深い場合であっても、上記実施の形態を適用することができる。この場合であっても、最も深いディップを埋めることのできる発光波長を有する発光素子が第2の発光素子12として用いられる。   For example, when the deepest dip in the combined emission spectrum of the first light emitting element 11 and the phosphor 15 is formed by the peaks of the two phosphors 15, that is, the dip other than the dip on the shortest wavelength side is the most. Even in a deep case, the above embodiment can be applied. Even in this case, a light emitting element having an emission wavelength capable of filling the deepest dip is used as the second light emitting element 12.

また、上記の実施の形態は特許請求の範囲に係る発明を限定するものではない。また、実施の形態の中で説明した特徴の組合せの全てが発明の課題を解決するための手段に必須であるとは限らない点に留意すべきである。   Moreover, said embodiment does not limit the invention which concerns on a claim. In addition, it should be noted that not all the combinations of features described in the embodiments are essential to the means for solving the problems of the invention.

1 発光装置
10 基板
11 第1の発光素子
12 第2の発光素子
13 第1の封止樹脂
14 第2の封止樹脂
15 蛍光体
DESCRIPTION OF SYMBOLS 1 Light-emitting device 10 Board | substrate 11 1st light emitting element 12 2nd light emitting element 13 1st sealing resin 14 2nd sealing resin 15 Phosphor

Claims (7)

第1の発光素子と、
蛍光体と、
前記第1の発光素子と前記蛍光体の合成発光スペクトルにおいて最も深いディップを形成する2つのピークのピーク波長の間のピーク波長を有する第2の発光素子と、
を有する発光装置。
A first light emitting element;
A phosphor,
A second light emitting element having a peak wavelength between two peak wavelengths forming the deepest dip in the combined emission spectrum of the first light emitting element and the phosphor;
A light emitting device.
前記第2の発光素子のピーク波長の前記最も深いディップの底の波長からのずれが2nm以内である、
請求項1に記載の発光装置。
The deviation of the peak wavelength of the second light emitting element from the wavelength at the bottom of the deepest dip is within 2 nm.
The light emitting device according to claim 1.
前記第2の発光素子が、異なる波長を有する複数の発光素子で構成される、
請求項1に記載の発光装置。
The second light emitting element is composed of a plurality of light emitting elements having different wavelengths.
The light emitting device according to claim 1.
前記第1の発光素子を封止する第1の封止材と、
前記第2の発光素子を封止する第2の封止材と、
をさらに有し、
前記蛍光体が、前記第1の封止材に含まれる、
請求項1〜3のいずれか1項に記載の発光装置。
A first sealing material for sealing the first light emitting element;
A second sealing material for sealing the second light emitting element;
Further comprising
The phosphor is included in the first sealing material.
The light-emitting device of any one of Claims 1-3.
前記第1の封止材と前記第2の封止材が接しており、
前記第1の封止材の屈折率が、前記第2の封止材の屈折率よりも低い、
請求項1〜4のいずれか1項に記載の発光装置。
The first sealing material and the second sealing material are in contact with each other;
The refractive index of the first sealing material is lower than the refractive index of the second sealing material;
The light-emitting device of any one of Claims 1-4.
前記第1の封止材と前記第2の封止材が接しており、
前記第1の封止材と前記第2の封止材の一方が環状の平面形状を有する環状封止材であり、他方が前記環状封止材に囲まれた封止材である、
請求項1〜5のいずれか1項に記載の発光装置。
The first sealing material and the second sealing material are in contact with each other;
One of the first sealing material and the second sealing material is an annular sealing material having an annular planar shape, and the other is a sealing material surrounded by the annular sealing material.
The light emitting device according to claim 1.
前記第2の発光素子を光通信の送信部として用いる、
請求項1〜6のいずれか1項に記載の発光装置。
The second light emitting element is used as a transmission unit for optical communication.
The light emitting device according to claim 1.
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