CN106353923A - Backlight source - Google Patents
Backlight source Download PDFInfo
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- CN106353923A CN106353923A CN201611059396.2A CN201611059396A CN106353923A CN 106353923 A CN106353923 A CN 106353923A CN 201611059396 A CN201611059396 A CN 201611059396A CN 106353923 A CN106353923 A CN 106353923A
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- quantum dot
- chromaticity coordinates
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- 239000002096 quantum dot Substances 0.000 claims abstract description 142
- 230000005284 excitation Effects 0.000 claims abstract description 72
- 238000000295 emission spectrum Methods 0.000 claims abstract description 14
- 239000003086 colorant Substances 0.000 claims abstract description 9
- 238000004020 luminiscence type Methods 0.000 claims 6
- 241001062009 Indigofera Species 0.000 claims 3
- 230000000694 effects Effects 0.000 abstract description 4
- 239000012528 membrane Substances 0.000 abstract 2
- 230000003287 optical effect Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000000695 excitation spectrum Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000000747 cardiac effect Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000007850 fluorescent dye Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133617—Illumination with ultraviolet light; Luminescent elements or materials associated to the cell
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
Abstract
The embodiment of the invention discloses a backlight source. The backlight source comprises an excitation light source and a quantum dot membrane; the excitation light source is a blue light excitation light source or a purple light excitation light source and is used for generating excitation light, and the quantum dot membrane is arranged in the light emitting direction of the excitation light, comprises quantum dots with two or more colors and is used for generating an emission spectrum under irradiation of the excitation light; by controlling the center wavelength of the excitation light source and chromaticity coordinates of the quantum dots with two or more colors, the backlight source can achieve an NTSC color gamut ranging from 80% to 110%. According to the backlight source, the effect of widening the color gamut range of the backlight source is achieved.
Description
Technical field
The present embodiments relate to display technology field, more particularly, to a kind of backlight.
Background technology
Backlight is the light source supplier of liquid crystal display (liquid crystal display, lcd), liquid in lcd
Crystal display assembly itself does not light, and leans on the backlight positioned at the liquid crystal display module back side to provide light source.
Backlight is usually mainly to be made as light source with light emitting diode (light emitting diode, led) at present
With direct-light-type backlight and side-light backlight can be divided into from light emission direction and the position relationship of the exiting surface of backlight of light source
Source.And the light source used by backlight generally induces white light by way of blue light led and yellow fluorescent powder at present.
Backlight induces white light using the mode of blue light led and yellow fluorescent powder, and backlight colour gamut can reach 72%
About ntsc gamut range, but much can not meet the development of Display Technique requirement, wherein ntsc gamut range is (U.S.)
National television system committee (national television standards committee) substandard color total
With.
Content of the invention
The embodiment of the present invention provides a kind of backlight, to realize improving the effect of backlight gamut range.
Backlight provided in an embodiment of the present invention includes:
Excitation source, described excitation source is blue light excitation source or purple light excited light source, for producing exciting light；
Quantum dot diaphragm, is arranged on the light direction of described exciting light, and includes the quantum dot of two or more colors, uses
In under the irradiation of exciting light, produce emission spectrum, by control the centre wavelength of described excitation source and described two more than
The chromaticity coordinates of the quantum dot of color, so that described backlight realizes 80%～110% ntsc gamut range.
Wherein, the centre wavelength of described blue light excitation source is located between 450nm～490nm；Described purple light excited light source
Centre wavelength be located at 380nm～425nm between.
Described quantum dot diaphragm includes red quantum point, green quantum dot and blue quantum dot, by exciting described in control
The chromaticity coordinates of the quantum dot of the centre wavelength of light source and described two above color so that described backlight realize 80%～
110% ntsc gamut range.
The chromaticity coordinates of described red quantum point be r1 (x=0.63 ± 0.05, y=0.33 ± 0.05), r2 (x=0.65 ±
0.05, y=0.32 ± 0.05) or r3 (x=0.67 ± 0.05, y=0.31 ± 0.05)；
Described green quantum dot chromaticity coordinates be g1 (x=0.29 ± 0.04, y=0.59 ± 0.05), g2 (x=0.27 ±
0.04, y=0.65 ± 0.05) or g3 (x=0.20 ± 0.04, y=0.71 ± 0.05)；
Described blueness quantum dot chromaticity coordinates be b1 (x=0.17 ± 0.02, y=0.10 ± 0.002), b2 (x=0.14 ±
0.02, y=0.08 ± 0.002) or b3 (x=0.15 ± 0.02, y=0.055 ± 0.001).
Alternatively, described excitation source is blue light excitation source, and the centre wavelength of described blue light excitation source is located at 455nm
Between～490nm；The chromaticity coordinates of described red quantum point is r1 (x=0.63 ± 0.05, y=0.33 ± 0.05), described green
The chromaticity coordinates of quantum dot is g1 (x=0.29 ± 0.04, y=0.59 ± 0.05), and the chromaticity coordinates of described blueness quantum dot is b1 (x
=0.17 ± 0.02, y=0.10 ± 0.002)；Described backlight is realized at least can reach 90% ntsc gamut range.
Alternatively, described excitation source is blue light excitation source, and the centre wavelength of described blue light excitation source is located at 465nm
Between～475nm；The chromaticity coordinates of described red quantum point is r2 (x=0.65 ± 0.05, y=0.32 ± 0.05), described green
The chromaticity coordinates of quantum dot is g2 (x=0.27 ± 0.04, y=0.65 ± 0.05), and the chromaticity coordinates of described blueness quantum dot is b2 (x
=0.14 ± 0.02, y=0.08 ± 0.002)；Described backlight is realized at least can reach 100% ntsc gamut range.
Alternatively, described excitation source is blue light excitation source, and the centre wavelength of described blue light excitation source is located at 450nm
Between～465nm；The chromaticity coordinates of described red quantum point is r3 (x=0.67 ± 0.05, y=0.31 ± 0.05), described green
The chromaticity coordinates of quantum dot is g3 (x=0.20 ± 0.04, y=0.71 ± 0.05), and the chromaticity coordinates of described blueness quantum dot is b3 (x
=0.15 ± 0.02, y=0.055 ± 0.001)；Described backlight is realized can reach 110% ntsc gamut range.
Alternatively, described excitation source is purple light excited light source, and the centre wavelength of described purple light excited light source is located at 410nm
Between～425nm；The chromaticity coordinates of described red quantum point is r1 (x=0.63 ± 0.05, y=0.33 ± 0.05), described green
The chromaticity coordinates of quantum dot is g1 (x=0.29 ± 0.04, y=0.59 ± 0.05), and the chromaticity coordinates of described blueness quantum dot is b1 (x
=0.17 ± 0.02, y=0.10 ± 0.002)；Described backlight is realized at least can reach 90% ntsc gamut range.
Alternatively, described excitation source is purple light excited light source, and the centre wavelength of described purple light excited light source is located at 400nm
Between～410nm；The chromaticity coordinates of described red quantum point is r2 (x=0.65 ± 0.05, y=0.32 ± 0.05), described green
The chromaticity coordinates of quantum dot is g2 (x=0.27 ± 0.04, y=0.65 ± 0.05), and the chromaticity coordinates of described blueness quantum dot is b2 (x
=0.14 ± 0.02, y=0.08 ± 0.002)；Described backlight is realized at least can reach 100% ntsc gamut range.
Alternatively, described excitation source is purple light excited light source, and the centre wavelength of described purple light excited light source is located at 380nm
Between～400nm；The chromaticity coordinates of described red quantum point is r3 (x=0.67 ± 0.05, y=0.31 ± 0.05), described green
The chromaticity coordinates of quantum dot is g3 (x=0.20 ± 0.04, y=0.71 ± 0.05), and the chromaticity coordinates of described blueness quantum dot is b3 (x
=0.15 ± 0.02, y=0.055 ± 0.001)；Described backlight is realized can reach 110% ntsc gamut range.
The embodiment of the present invention provides a kind of backlight, by quantum dot diaphragm arrangement on the light direction of excitation source, and
Quantum dot diaphragm includes the quantum dot of two or more colors, irradiates quantum dot using blue light excitation source or purple light excited light source
Diaphragm produces the white light of wide colour gamut, solves the problems, such as that in prior art, white light gamut range can not meet Display Technique requirement, real
Show the effect improving backlight gamut range.
Brief description
Fig. 1 is the backlight working method schematic diagram that the embodiment of the present invention one provides；
Fig. 2 is the part-structure schematic diagram of the direct-light-type backlight that the embodiment of the present invention three provides；
Fig. 3 is the structural representation of the light-metering formula backlight that the embodiment of the present invention three provides.
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the present invention, rather than limitation of the invention.It also should be noted that, in order to just
Part related to the present invention rather than entire infrastructure is illustrate only in description, accompanying drawing.
Embodiment one
Embodiments provide a kind of backlight, this backlight can be used as the backlight of liquid crystal display etc., can
To apply on the products such as LCD TV, liquid crystal display, mobile phone and computer display screen or device.
Backlight provided in an embodiment of the present invention includes excitation source and quantum dot diaphragm.Excitation source is blue light exciting light
Source or purple light excited light source, for producing exciting light.Quantum dot diaphragm, is arranged on the light direction of exciting light, and includes two
Plant the quantum dot of above color, for, under the irradiation of exciting light, producing emission spectrum, by controlling the middle cardiac wave of excitation source
The chromaticity coordinates of the long quantum dot with two or more colors, so that backlight realizes 80%～110% ntsc gamut range.
Fig. 1 is backlight working method schematic diagram provided in an embodiment of the present invention, as shown in figure 1, excitation source 11 sends
Exciting light 110 be radiated on quantum dot diaphragm 12, excitation quantum point diaphragm 12 sends new light beam 120.
Quantum dot is generally made up of iib～a in the periodic table of elements or iiia～va race element material, and its particle diameter generally exists
2～20nm.Because electronics and hole are by quantum confinement, continuous band structure becomes the discrete energy with molecular characterization to quantum dot
Level structure, can launch fluorescence after being excited.Quantum dot is led in solaode, luminescent device, optical bio labelling etc. in recent years
Domain is widely used, and has special advantage in terms of for led display technology field.First, the launching light of quantum dot
Spectrum can be controlled by changing the size of quantum dot, and its emission spectrum can be made to cover whole visible region.With cdte
As a example (cadmium telluride) quantum dot, when its particle diameter grows into 4.0nm from 2.5nm, their launch wavelength can be moved from 510nm
To 660nm, its corresponding color turns to green from red change；Second, quantum dot has good light stability；Third, quantum
Point has wide excitation spectrum and narrow emission spectra, achieves that the quantum dot to different-grain diameter is carried out using same excitation source
Simultaneous shot, produces the color of multiple spectrum wavelength；Fourth, the fluorescence lifetime of quantum dot is long, it is the organic fluorescent dye fluorescence longevity
3～4 times of life, so under same excitation light irradiation, using quantum dot than bright using the induced white light of yellow fluorescent powder
Degree can improve 10%～15%.
In the embodiment of the present invention, ntsc represents (U.S.) national television system committee, and nstc gamut range is ntsc mark
The summation of the color under standard.
Alternatively, the centre wavelength of blue light excitation source is located between 450nm～490nm；The center of purple light excited light source
Wavelength is located between 380nm～425nm.Blue light excitation source and purple light excited light source can be light emitting diode.Quantum dot film
Piece includes red quantum point, green quantum dot and blue quantum dot.Red quantum point refers to that the emission spectrum of quantum dot is corresponding
Color is redness.Green quantum dot refers to that the corresponding color of the emission spectrum of quantum dot is green.Blue quantum dot refers to quantum
The corresponding color of emission spectrum of point is blueness.In other embodiments, quantum dot diaphragm can also be set and include amount of red
Son point and green quantum dot, and selective exitation light source makes backlight produce white light for blue light excitation source.
Quantum dot diaphragm can be by pressing ratio mixing by red quantum point, green quantum dot and blue quantum, with Asia
Gram force granule or silica gel stir, and form quantum dot diaphragm through low temperature and pressure.
Alternatively, the chromaticity coordinates of red quantum point is r1 (x=0.63 ± 0.05, y=0.33 ± 0.05), r2 (x=0.65
± 0.05, y=0.32 ± 0.05) or r3 (x=0.67 ± 0.05, y=0.31 ± 0.05)；The chromaticity coordinates of green quantum dot is g1
(x=0.29 ± 0.04, y=0.59 ± 0.05), g2 (x=0.27 ± 0.04, y=0.65 ± 0.05) or g3 (x=0.20 ±
0.04, y=0.71 ± 0.05)；The chromaticity coordinates of blue quantum dot is b1 (x=0.17 ± 0.02, y=0.10 ± 0.002), b2 (x
=0.14 ± 0.02, y=0.08 ± 0.002) or b3 (x=0.15 ± 0.02, y=0.055 ± 0.001).Wherein, red quantum
The chromaticity coordinates of point refers to coordinate figure in chromaticity diagram for the red quantum point emission spectrum corresponding color, the chromaticity coordinates of green quantum dot
Refer to coordinate figure in chromaticity diagram for the green quantum dot emission spectrum corresponding color, the chromaticity coordinates of blue quantum dot refers to amount of blue
Son point coordinate figure in chromaticity diagram for the emission spectrum corresponding color.
Exemplarily, the blue primary light that blue light led sends, is radiated at containing red quantum point, green quantum dot and blueness
On the quantum dot diaphragm of quantum dot.Quantum dot is cdte (cadmium telluride) quantum dot.Wherein, the blue primary sending from blue light led
In red quantum point, excitated red quantum dot produces HONGGUANG to light irradiation；The blue primary light irradiation sending from blue light led is green
During color quantum dot, green quantum dot is excited to produce green glow；The blue primary light irradiation sending from blue light led is in blue quantum dot
When, excitated blue quantum dot produces blue light.The light of three kinds of colors that three kinds of color quantum dots send, through mixing, just creates white
Light, its color gamut value is determined by the chromaticity coordinates in chromaticity diagram for the light of three kinds of colors.
The embodiment of the present invention, by provide a kind of backlight, by quantum dot diaphragm arrangement excitation source light direction
On, and quantum dot diaphragm includes the quantum dot of two or more colors, is irradiated using blue light excitation source or purple light excited light source
Quantum dot diaphragm produces the white light of wide colour gamut.Because quantum dot has good light stability, and have wide excitation spectrum and
Narrow emission spectra, so for the mode using blue light led and yellow fluorescent powder induces white light, real using the present invention
The white light applying the backlight generation of example offer has broader gamut range, solves white light gamut range in prior art and meets not
Display Technique requires problem it is achieved that improving the effect of backlight gamut range.
Embodiment two
On the basis of above-described embodiment, based on above-described embodiment, difference is the present embodiment, in above-described embodiment
On the basis of, group unification, selective exitation light source is blue light excitation source or purple light excited light source, selects the color of red quantum point to sit
It is designated as r1, the chromaticity coordinates of green quantum dot is g1, and the chromaticity coordinates of blue quantum dot is b1, make backlight realize at least can reach
90% ntsc gamut range；Combination two, selective exitation light source is blue light excitation source or purple light excited light source, selects amount of red
The chromaticity coordinates of son point is r2, and the chromaticity coordinates of green quantum dot is g2, and the chromaticity coordinates of blue quantum dot is b2, make backlight realize to
Can reach 100% ntsc gamut range less；Combination three, selective exitation light source is blue light excitation source or purple light excited light source,
The chromaticity coordinates selecting red quantum point is r3, and the chromaticity coordinates of green quantum dot is g3, and the chromaticity coordinates of blue quantum dot is b3, makes the back of the body
Light source is realized can reach 110% ntsc gamut range.
Correspondingly, in group unification, centered on excitation source, wavelength is located at blue light excitation source between 455nm～490nm.Amount
The chromaticity coordinates of red quantum point, green quantum dot and blue quantum dot that son point diaphragm comprises be respectively r1 (x=0.63 ±
0.05, y=0.33 ± 0.05), g1 (x=0.29 ± 0.04, y=0.59 ± 0.05) and b1 (x=0.17 ± 0.02, y=0.10
± 0.002), it is possible to use only comprising the red quantum point for r1 for the chromaticity coordinates and chromaticity coordinates is the green quantum dot of g1.
Excitation source can also be that centre wavelength is located at purple light excited light source between 410nm～425nm, at this time, it may be necessary to join
Close the quantum dot diaphragm comprising three kinds of color quantum dots to produce white light.Wherein, the chromaticity coordinates of red quantum point is r1, amount of green color
The chromaticity coordinates of son point is g1, and the chromaticity coordinates of blue quantum dot is b1.
In combination two, centered on excitation source, wavelength is located at blue light excitation source between 465nm～475nm.Quantum dot film
The chromaticity coordinates of red quantum point, green quantum dot and blue quantum dot that piece comprises is respectively r2 (x=0.65 ± 0.05, y=
0.32 ± 0.05), g2 (x=0.27 ± 0.04, y=0.65 ± 0.05) and b2 (x=0.14 ± 0.02, y=0.08 ±
0.002), it is possible to use only comprising the red quantum point for r2 for the chromaticity coordinates and chromaticity coordinates is the green quantum dot of g2.
Excitation source can also be that centre wavelength is located at purple light excited light source between 400nm～410nm, at this time, it may be necessary to join
Close the quantum dot diaphragm comprising three kinds of color quantum dots to produce white light.Wherein, the chromaticity coordinates of red quantum point is r2, amount of green color
The chromaticity coordinates of son point is g2, and the chromaticity coordinates of blue quantum dot is b2.
In combination three, centered on excitation source, wavelength is located at blue light excitation source between 450nm～465nm.Quantum dot film
The chromaticity coordinates of red quantum point, green quantum dot and blue quantum dot that piece comprises is respectively r3 (x=0.67 ± 0.05, y=
0.31 ± 0.05), g3 (x=0.20 ± 0.04, y=0.71 ± 0.05) and b3 (x=0.15 ± 0.02, y=0.055 ±
0.001), it is possible to use only comprising the red quantum point for r3 for the chromaticity coordinates and chromaticity coordinates is the green quantum dot of g3.
Excitation source can also be that centre wavelength is located at purple light excited light source between 380nm～400nm, at this time, it may be necessary to join
Close the quantum dot diaphragm comprising three kinds of color quantum dots to produce white light.Wherein, the chromaticity coordinates of red quantum point is r3, amount of green color
The chromaticity coordinates of son point is g3, and the chromaticity coordinates of blue quantum dot is b3.
It should be noted that above-mentioned lasing light emitter and quantum dot diaphragm can also have other combinations multiple, such as excitation source
Centered on wavelength be located at 455nm～490nm between blue light excitation source.Red quantum point that quantum dot diaphragm comprises, amount of green color
The chromaticity coordinates of son point and blue quantum dot be respectively r2 (x=0.65 ± 0.05, y=0.32 ± 0.05), g2 (x=0.27 ±
0.04, y=0.65 ± 0.05) and b2 (x=0.14 ± 0.02, y=0.08 ± 0.002).
Backlight provided in an embodiment of the present invention, the excitation source with different centre wavelength scopes is coordinated containing specific
The quantum dot diaphragm of chromaticity coordinates quantum dot, correspondingly, group unification makes backlight achieve at least to can reach 90% ntsc colour gamut
Scope, combination two make backlight realize at least can reach 100% ntsc gamut range, combination three make backlight achieve up to
To 110% ntsc gamut range, so may be selected by suitably combining meeting Display Technique to backlight gamut range
Requirement.
Embodiment three
On the basis of above-described embodiment, based on above-described embodiment, difference is the present embodiment, with above-described embodiment
Based on, the blue light led selecting specific wavelength is as excitation source, and coordinates the quantum dot film containing specific chromaticity coordinates quantum dot
Piece is producing white light.
Fig. 2 is the part-structure schematic diagram of the direct-light-type backlight that the embodiment of the present invention three provides, as shown in Fig. 2 this back of the body
Light source includes backlight base plate 21, and optical reflection film 22 is arranged on backlight base plate 21, and excitation source is blue light led24, its launching light
The centre wavelength of spectrum is 455nm, and multiple blue light led24 (not shown in Fig. 2) pasters are arranged on circuit board 23, and pass through circuit
Deposited copper wire on plate 23 is electrically connected, and a plurality of circuit board 23 is arranged on optical reflection film 22.It is provided with above blue light led24
Optical diaphragm group, optical diaphragm group includes light diffusing sheet 25, quantum dot diaphragm 26 and light increasing successively along the light direction of backlight
Bright film 27, and in quantum dot diaphragm 26, include red quantum point and green quantum dot, wherein, the chromaticity coordinates of red quantum point is
(x=0.63, y=0.33), the chromaticity coordinates of green quantum dot is (x=0.29, y=0.59).Using support 28 and base plate 21 phase
Cooperation is fixing by light diffusing sheet 25, quantum dot diaphragm 26 and light brightness enhancement film 27, forms complete backlight module.Using this backlight
92% ntsc gamut range can be obtained.
Fig. 3 is the structural representation of the light-metering formula backlight that the embodiment of the present invention three provides, as shown in figure 3, backlight bag
Include light source assembly 31 and light guide plate assembly 32, light source assembly 31 is arranged at the side of light guide plate assembly 32.For light source assembly 31,
Including light source bracket 311, the first optical reflection film 312, circuit board 313, blue light led314 and quantum dot diaphragm 315, wherein, first
Optical reflection film 312 is arranged on light source bracket 311, and excitation source is blue light led314, and the centre wavelength of its emission spectrum is
460nm, multiple blue light led314 (not shown in Fig. 3) pasters are arranged on strip circuit plate 313, circuit board 313 and blue light
Led314 is electrically connected by applying copper wire.Circuit board 313 is arranged on the first optical reflection film 312.On blue light led314
The fixing bar shaped quantum dot diaphragm 315 in side, and in quantum dot diaphragm 315, include red quantum point, green quantum dot and amount of blue
Sub-, wherein, the chromaticity coordinates of red quantum point is (x=0.65, y=0.32), the chromaticity coordinates of green quantum dot be (x=0.27,
Y=0.65), the chromaticity coordinates of blue quantum dot is (x=0.14, y=0.08).Light guide plate assembly 32 includes going out light along backlight
Backlight base plate 321, the second optical reflection film 322, light guide plate 323, light diffusing sheet 324 and light brightness enhancement film 325 that direction sets gradually.
Light guide plate 323 is provided with the second optical reflection film 322, light guide plate near the side of the side of backlight base plate 321 and non-incident illumination
323 are provided with site (not shown in Fig. 3) near the one side of backlight base plate 321, and these sites make incident from light guide plate 323 side
Light after superrefraction can from need light-emitting area send.104% ntsc gamut range can be obtained using this backlight.
Note, above are only presently preferred embodiments of the present invention and institute's application technology principle.It will be appreciated by those skilled in the art that
The invention is not restricted to specific embodiment described here, can carry out for a person skilled in the art various obvious changes,
Readjust and substitute without departing from protection scope of the present invention.Therefore although being carried out to the present invention by above example
It is described in further detail, but the present invention is not limited only to above example, without departing from the inventive concept, also
Other Equivalent embodiments more can be included, and the scope of the present invention is determined by scope of the appended claims.
Claims (10)
1. a kind of backlight is it is characterised in that include:
Excitation source, described excitation source is blue light excitation source or purple light excited light source, for producing exciting light；
Quantum dot diaphragm, is arranged on the light direction of described exciting light, and include two or more colors quantum dot, for
Under the irradiation of exciting light, produce emission spectrum, by controlling the centre wavelength of described excitation source and described two above color
Quantum dot chromaticity coordinates so that described backlight realizes 80%～110% ntsc gamut range.
2. backlight according to claim 1 is it is characterised in that the centre wavelength of described blue light excitation source is located at
Between 450nm～490nm；The centre wavelength of described purple light excited light source is located between 380nm～425nm.
3. backlight according to claim 2 is it is characterised in that described quantum dot diaphragm includes red quantum point, green
Quantum dot and blue quantum dot, by controlling the centre wavelength of described excitation source and the quantum dot of described two above color
Chromaticity coordinates, so that described backlight realizes 80%～110% ntsc gamut range.
4. backlight according to claim 3 is it is characterised in that the chromaticity coordinates of described red quantum point is r1 (x=0.63
± 0.05, y=0.33 ± 0.05), r2 (x=0.65 ± 0.05, y=0.32 ± 0.05) or r3 (x=0.67 ± 0.05, y=
0.31±0.05)；
Described green quantum dot chromaticity coordinates be g1 (x=0.29 ± 0.04, y=0.59 ± 0.05), g2 (x=0.27 ± 0.04,
Y=0.65 ± 0.05) or g3 (x=0.20 ± 0.04, y=0.71 ± 0.05)；
Described blueness quantum dot chromaticity coordinates be b1 (x=0.17 ± 0.02, y=0.10 ± 0.002), b2 (x=0.14 ±
0.02, y=0.08 ± 0.002) or b3 (x=0.15 ± 0.02, y=0.055 ± 0.001).
5. backlight according to claim 4 it is characterised in that described excitation source be blue light excitation source, described indigo plant
The centre wavelength in phot-luminescence source is located between 455nm～490nm；
The chromaticity coordinates of described red quantum point is r1 (x=0.63 ± 0.05, y=0.33 ± 0.05), described green quantum dot
Chromaticity coordinates be g1 (x=0.29 ± 0.04, y=0.59 ± 0.05), described blueness quantum dot chromaticity coordinates be b1 (x=0.17 ±
0.02, y=0.10 ± 0.002)；
Described backlight is realized at least can reach 90% ntsc gamut range.
6. backlight according to claim 4 it is characterised in that described excitation source be blue light excitation source, described indigo plant
The centre wavelength in phot-luminescence source is located between 465nm～475nm；
The chromaticity coordinates of described red quantum point is r2 (x=0.65 ± 0.05, y=0.32 ± 0.05), described green quantum dot
Chromaticity coordinates be g2 (x=0.27 ± 0.04, y=0.65 ± 0.05), described blueness quantum dot chromaticity coordinates be b2 (x=0.14 ±
0.02, y=0.08 ± 0.002)；
Described backlight is realized at least can reach 100% ntsc gamut range.
7. backlight according to claim 4 it is characterised in that described excitation source be blue light excitation source, described indigo plant
The centre wavelength in phot-luminescence source is located between 450nm～465nm；
The chromaticity coordinates of described red quantum point is r3 (x=0.67 ± 0.05, y=0.31 ± 0.05), described green quantum dot
Chromaticity coordinates be g3 (x=0.20 ± 0.04, y=0.71 ± 0.05), described blueness quantum dot chromaticity coordinates be b3 (x=0.15 ±
0.02, y=0.055 ± 0.001)；
Described backlight is realized can reach 110% ntsc gamut range.
8. backlight according to claim 4 it is characterised in that described excitation source be purple light excited light source, described purple
The centre wavelength in phot-luminescence source is located between 410nm～425nm；
The chromaticity coordinates of described red quantum point is r1 (x=0.63 ± 0.05, y=0.33 ± 0.05), described green quantum dot
Chromaticity coordinates be g1 (x=0.29 ± 0.04, y=0.59 ± 0.05), described blueness quantum dot chromaticity coordinates be b1 (x=0.17 ±
0.02, y=0.10 ± 0.002)；
Described backlight is realized at least can reach 90% ntsc gamut range.
9. backlight according to claim 4 it is characterised in that described excitation source be purple light excited light source, described purple
The centre wavelength in phot-luminescence source is located between 400nm～410nm；
The chromaticity coordinates of described red quantum point is r2 (x=0.65 ± 0.05, y=0.32 ± 0.05), described green quantum dot
Chromaticity coordinates be g2 (x=0.27 ± 0.04, y=0.65 ± 0.05), described blueness quantum dot chromaticity coordinates be b2 (x=0.14 ±
0.02, y=0.08 ± 0.002)；
Described backlight is realized at least can reach 100% ntsc gamut range.
10. backlight according to claim 4 it is characterised in that described excitation source be purple light excited light source, described purple
The centre wavelength in phot-luminescence source is located between 380nm～400nm；
The chromaticity coordinates of described red quantum point is r3 (x=0.67 ± 0.05, y=0.31 ± 0.05), described green quantum dot
Chromaticity coordinates be g3 (x=0.20 ± 0.04, y=0.71 ± 0.05), described blueness quantum dot chromaticity coordinates be b3 (x=0.15 ±
0.02, y=0.055 ± 0.001)；
Described backlight is realized can reach 110% ntsc gamut range.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611059396.2A CN106353923A (en) | 2016-11-25 | 2016-11-25 | Backlight source |
| CN201710208839.8A CN106990613A (en) | 2016-11-25 | 2017-03-31 | A kind of backlight |
| CN201710210724.2A CN107102472A (en) | 2016-11-25 | 2017-03-31 | Backlight and display device |
| CN201710210732.7A CN107180902A (en) | 2016-11-25 | 2017-03-31 | LED lamp bead and LED/light source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611059396.2A CN106353923A (en) | 2016-11-25 | 2016-11-25 | Backlight source |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106353923A true CN106353923A (en) | 2017-01-25 |
Family
ID=57862674
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611059396.2A Pending CN106353923A (en) | 2016-11-25 | 2016-11-25 | Backlight source |
| CN201710210732.7A Withdrawn CN107180902A (en) | 2016-11-25 | 2017-03-31 | LED lamp bead and LED/light source |
| CN201710210724.2A Withdrawn CN107102472A (en) | 2016-11-25 | 2017-03-31 | Backlight and display device |
| CN201710208839.8A Pending CN106990613A (en) | 2016-11-25 | 2017-03-31 | A kind of backlight |
Family Applications After (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710210732.7A Withdrawn CN107180902A (en) | 2016-11-25 | 2017-03-31 | LED lamp bead and LED/light source |
| CN201710210724.2A Withdrawn CN107102472A (en) | 2016-11-25 | 2017-03-31 | Backlight and display device |
| CN201710208839.8A Pending CN106990613A (en) | 2016-11-25 | 2017-03-31 | A kind of backlight |
Country Status (1)
| Country | Link |
|---|---|
| CN (4) | CN106353923A (en) |
Cited By (5)
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| CN111650777A (en) * | 2020-06-12 | 2020-09-11 | 京东方科技集团股份有限公司 | Eye protection method for display device, eye protection system, eye protection equipment and readable storage medium |
| WO2021232493A1 (en) * | 2020-05-19 | 2021-11-25 | Tcl华星光电技术有限公司 | Flexible color filter film and method for manufacturing same, and full-color micro light-emitting diode device |
| CN114354507A (en) * | 2021-12-30 | 2022-04-15 | 广域兴智能(南通)科技有限公司 | Spectrometer for detecting quantum optical material |
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| CN108598248A (en) * | 2018-06-13 | 2018-09-28 | 广东恒润光电有限公司 | A kind of novel light-emitting diode structure with quantum dot diaphragm |
| CN109301053A (en) * | 2018-11-09 | 2019-02-01 | 易美芯光（北京）科技有限公司 | A kind of quantum dot LED encapsulation structure and its manufacturing method |
| CN112420898A (en) * | 2019-08-23 | 2021-02-26 | 致晶科技（北京）有限公司 | Packaging method of quantum dot film, packaged quantum dot film and application |
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| KR101577300B1 (en) * | 2008-10-28 | 2015-12-15 | 삼성디스플레이 주식회사 | Light Emitting Diode Using Quantum Dot And Backlight Assembly Having The Same |
| CN101761817A (en) * | 2009-09-25 | 2010-06-30 | 苏州工业园区古电科技有限公司 | Flexible tubular strip light |
| US8294168B2 (en) * | 2010-06-04 | 2012-10-23 | Samsung Electronics Co., Ltd. | Light source module using quantum dots, backlight unit employing the light source module, display apparatus, and illumination apparatus |
| CN201836790U (en) * | 2010-09-03 | 2011-05-18 | 湖北弘毅建筑装饰工程有限公司 | Adjustable solar street lamp |
| CN202521397U (en) * | 2012-02-15 | 2012-11-07 | 青岛海信电器股份有限公司 | Backlight module |
| CN103343943A (en) * | 2013-05-08 | 2013-10-09 | 深圳市华星光电技术有限公司 | Backlight module of display device and white light LED |
| CN104518072B (en) * | 2013-09-29 | 2017-12-05 | 展晶科技(深圳)有限公司 | Light emitting diode |
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| CN105301841A (en) * | 2015-11-23 | 2016-02-03 | 青岛海信电器股份有限公司 | Backlight module and liquid crystal display equipment |
| CN206918768U (en) * | 2016-11-25 | 2018-01-23 | 惠州市华量半导体有限公司 | Backlight and display device |
-
2016
- 2016-11-25 CN CN201611059396.2A patent/CN106353923A/en active Pending
-
2017
- 2017-03-31 CN CN201710210732.7A patent/CN107180902A/en not_active Withdrawn
- 2017-03-31 CN CN201710210724.2A patent/CN107102472A/en not_active Withdrawn
- 2017-03-31 CN CN201710208839.8A patent/CN106990613A/en active Pending
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Also Published As
| Publication number | Publication date |
|---|---|
| CN107180902A (en) | 2017-09-19 |
| CN106990613A (en) | 2017-07-28 |
| CN107102472A (en) | 2017-08-29 |
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