CN115308944A - Chip structure and display module - Google Patents
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- CN115308944A CN115308944A CN202110502474.6A CN202110502474A CN115308944A CN 115308944 A CN115308944 A CN 115308944A CN 202110502474 A CN202110502474 A CN 202110502474A CN 115308944 A CN115308944 A CN 115308944A
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- 239000002096 quantum dot Substances 0.000 claims abstract description 101
- 230000005284 excitation Effects 0.000 claims abstract description 67
- 230000002093 peripheral effect Effects 0.000 claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 30
- 239000000377 silicon dioxide Substances 0.000 claims description 15
- 235000012239 silicon dioxide Nutrition 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 238000004891 communication Methods 0.000 claims description 2
- 238000005424 photoluminescence Methods 0.000 abstract description 11
- 239000010410 layer Substances 0.000 description 176
- 238000010586 diagram Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 230000001105 regulatory effect Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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Abstract
The invention discloses a chip structure and a display module, which comprise an excitation light source and a quantum dot structure arranged on the excitation light source, and are characterized in that the excitation light source is also provided with a light adjusting structure, the light adjusting structure is arranged on the side surface of the quantum dot structure in a surrounding manner, the light adjusting structure comprises a first light thinning medium layer, a light tight medium layer and a second light thinning medium layer which are sequentially stacked, the first light thinning medium layer is closer to the excitation light source than the second light thinning medium layer, and the surface of the light tight medium layer close to one side of the second light thinning medium layer or the peripheral area of the surface of the second light thinning medium layer is an uneven surface. The invention can separate the light intensity of the excitation light source from the light intensity of the quantum dot structure, avoid the light intensity of the excitation light source from being superposed on the light intensity of the quantum dot structure, and improve the photoluminescence color purity of the quantum dot structure.
Description
Technical Field
The invention relates to the technical field of semiconductor light emitting, in particular to a chip structure and a display module.
Background
Quantum dots are semiconductor nanostructures, and due to the advantages of wide color gamut, high color purity and small size, quantum dots become a key technology for new generation display applications.
However, for the application of quantum dot photoluminescence, referring to fig. 1, if the quantum dot structure 20 is superimposed on the excitation light source 10, light generated by the excitation light source 10 irradiates the quantum dot structure 20, and excites the quantum dot structure 20 to emit light, i.e. photoluminescence of the quantum dot structure 20, propagation of photoluminescence light of the quantum dot structure 20 has various directions, i.e. both the upper surface and the side surface 21 of the quantum dot structure 20 can emit light outwards, light of the excitation light source 10 mainly exits from right above the excitation light source 10, so that the light intensity of the excitation light source 10 and the light intensity of the quantum dot structure 20 are superimposed together, referring to a light propagation path marked by an arrow in fig. 1, since it is difficult to reject the light intensity of the excitation light source 10, color cast of the final display is generated, and the advantage of high color purity of the quantum dot itself cannot be exerted.
In order to solve the above problems, some technologies use short wavelength light sources such as ultraviolet light, so that human eyes cannot perceive the existence of the light source, but the preparation difficulty and cost of the light source are increased, and the short wavelength light may damage human eyes. Some techniques increase the color conversion rate by increasing the thickness of the quantum dot layer, but increase the difficulty of quantum dot coating or patterning, and decrease the display resolution.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provides a chip structure and a display module, which separate the light intensity of an excitation light source from the light intensity of a quantum dot structure, avoid the light intensity of the excitation light source from being superposed on the light intensity of the quantum dot structure and improve the photoluminescence color purity of the quantum dot structure.
In order to achieve the purpose, the technical scheme of the invention is as follows:
the utility model provides a chip architecture, is in including excitation light source and setting quantum dot structure on the excitation light source, a serial communication port, still be equipped with light regulating structure on the excitation light source, light regulating structure is around setting up the side of quantum dot structure, light regulating structure is including the first light sparse dielectric layer, the optically dense dielectric layer and the second light sparse dielectric layer that stack gradually, first light sparse dielectric layer is compared the second light sparse dielectric layer is close to the excitation light source, being close to on the optically dense dielectric layer the peripheral region on the surface of second light sparse dielectric layer one side or the peripheral region on the surface of second light sparse dielectric layer is uneven surface.
Preferably, a projection of the uneven surface on a plane where the excitation light source is located falls on an outer periphery of the excitation light source.
Preferably, the side surface of the quantum dot structure is opposite to the side surface of the optically dense medium layer.
Preferably, the arrangement scheme of the positions of the first optically thinner medium layer and the second optically thinner medium layer includes any one of the following schemes:
the first scheme is as follows: the first light-thinning medium layer is arranged below the quantum dot structure, and the second light-thinning medium layer is arranged above the quantum dot structure;
scheme II: the first light-thinning medium layer is arranged below the quantum dot structure, and the second light-thinning medium layer is arranged on the side of the quantum dot structure in a surrounding mode;
and a third scheme is as follows: the first light-thinning medium layer is arranged on the lateral side of the quantum dot structure in a surrounding mode, and the second light-thinning medium layer is arranged on the lateral side of the quantum dot structure in a surrounding mode;
and the scheme is as follows: the first light-thinning medium layer is arranged on the lateral side of the quantum dot structure in a surrounding mode, and the second light-thinning medium layer is arranged above the quantum dot structure.
Preferably, a groove is formed in the surface of the excitation light source close to one side of the quantum dot structure, the first light-lyophobic medium layer is accommodated in the groove, and the second light-lyophobic medium layer is arranged above the quantum dot structure or is arranged on the side of the quantum dot structure in a surrounding mode.
Preferably, the first optically thinner medium layer includes a silicon dioxide layer or an air layer, the second optically thinner medium layer includes a silicon dioxide layer or an air layer, and the optically denser medium layer includes a silicon nitride layer.
Preferably, the first optically hydrophobic medium layer is an air layer, the second optically hydrophobic medium layer is an air layer, and the optically dense medium layer is a silica layer.
Preferably, the excitation light source comprises an LED excitation light source, an OLED excitation light source, or an LCD excitation light source.
The invention also discloses a display module comprising the chip structure.
The embodiment of the invention has the following beneficial effects:
the embodiment of the invention arranges the light regulating structure on the side surface of the quantum dot structure, the light regulating structure comprises a first light sparse medium layer, an optically dense medium layer and a second light sparse medium layer which are sequentially stacked, photoluminescent light emitted from the side surface of the quantum dot structure enters the optically dense medium layer to be transmitted, and because the refractive index of the first light sparse medium layer or the second light sparse medium layer is smaller than that of the optically dense medium layer, when the light reaches the interface of the first light sparse medium layer or the second light sparse medium layer from the optically dense medium layer, total reflection can be generated at the interface of the first light sparse medium layer or the second light sparse medium layer, so that the photoluminescent light of the quantum dot structure is locked at the optically dense medium layer to be transmitted, namely, the light guide effect is achieved until the uneven surface is reached, the uneven surface can break the total reflection transmission path of the light, the light locked at the light propagated by the optically dense medium layer is emitted from the uneven surface, and the photoluminescent light emitted from the excitation light source right above the quantum dot structure can be separated through the light guide effect, and the luminous color purity of the quantum dot structure is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the prior art descriptions will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Wherein:
fig. 1 is a schematic structural diagram of a chip structure in the prior art.
Fig. 2 is a schematic structural diagram of a chip structure according to an embodiment of the invention.
Fig. 3 is a schematic structural diagram of a chip structure according to an embodiment of the invention.
Fig. 4 is a schematic structural diagram of a chip structure according to an embodiment of the invention.
Fig. 5 is a schematic structural diagram of a chip structure according to an embodiment of the invention.
Fig. 6 is a schematic structural diagram of a chip structure according to an embodiment of the invention.
Fig. 7 is a schematic structural diagram of a chip structure according to an embodiment of the invention.
In the figure, an excitation light source 10, a groove 11, a quantum dot structure 20, a sidewall 21 of the quantum dot structure, a first light-sparse medium layer 30, an optically dense medium layer 40, a protrusion 41, a second light-sparse medium layer 50, and a substrate 60 are shown.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without inventive step based on the embodiments of the present invention, are within the scope of protection of the present invention.
Referring to fig. 2 to 7, the present invention discloses a chip structure, which includes an excitation light source 10 and a quantum dot structure 20 disposed above the excitation light source 10, and further includes a light modulation structure disposed above the excitation light source 10, the light modulation structure is disposed around a side surface of the quantum dot structure 20, the light modulation structure includes a first optically sparse medium layer 30, an optically dense medium layer 40 and a second optically sparse medium layer 50, which are sequentially stacked, the first optically sparse medium layer 30 is close to the excitation light source 10, the second optically sparse medium layer 50 is away from the excitation light source 10, and a peripheral area of a surface of the optically dense medium layer 40 close to one side of the second optically sparse medium layer 50 or a peripheral area of a surface of the second optically sparse medium layer 50 is an uneven surface 41.
By respectively laminating the first optically thinner medium layer 30 and the second optically thinner medium layer 50 on both sides of the optically denser medium layer 40 on the side of the quantum dot structure 20, the photoluminescent light emitted from the side surface 21 of the quantum dot structure 20 enters the optically denser medium layer 40 for propagation, and since the refractive index of the first optically thinner medium layer 30 or the second optically thinner medium layer 50 is smaller than that of the optically denser medium layer 40, when the light reaches the interface of the first optically thinner medium layer 30 or the second optically thinner medium layer 50 from the optically denser medium layer 40, the photoluminescent light is totally reflected at the interface of the first optically thinner medium layer 30 or the second optically thinner medium layer 50, so that the photoluminescent light of the quantum dot structure 20 is locked at the optically denser medium layer 40 for propagation, i.e. the optical waveguide effect, until reaching the uneven surface 41, the uneven surface 41 can break the total reflection propagation path of the light, and the light locked at the optically denser medium layer 40 is emitted from the uneven surface 41, so that the photoluminescent light at the side surface of the quantum dot structure 20 can be separated from the excitation light source 10 directly above the optical waveguide effect, thereby improving the purity of the photoluminescent light emitting color point structure 20. The separation of the superimposed light intensities propagating from the upper surface of the quantum dot structure 20 to the directly above is not considered here, because there are also other functional layers directly above the quantum dot structure 20 of the chip that can block the light-induced intensity emitted from the upper surface of the quantum dot structure 20 and the light intensity emitted from the upper surface of the quantum dot structure 20 by the excitation light source 10.
The "optical phobic" in the first optically thinner medium layer 30 and the second optically thinner medium layer 50 in the present application is in a contrast relationship with the "optical density" in the optically denser medium layer 40, that is, the refractive index of the first optically thinner medium layer 30 is smaller than that of the optically denser medium layer 40, and the refractive index of the second optically thinner medium layer 50 is smaller than that of the optically denser medium layer 40.
In addition, since the photoluminescence light emitted from the side surface 21 of the quantum dot structure 20 propagates laterally in the optically denser medium layer 40 and is guided to the region other than the region directly above the excitation light source 10, the lengths of the first optically thinner medium layer 30, the optically denser medium layer 40, and the second optically thinner medium layer 50 are continuously extended from the region directly above the excitation light source 10 to the region other than the region, and the thickness of the first optically thinner medium layer 30, the thickness of the optically denser medium layer 40, and the thickness of the second optically thinner medium layer 50 may be different from each other.
In one embodiment, the projection of the uneven surface 41 on the plane of the excitation light source 10 falls on the periphery of the excitation light source 10, so that the photoluminescence light on the side of the quantum dot structure 20 can be completely separated from the light emitted from the excitation light source 10 directly above through the optical waveguide effect.
In one embodiment, referring to fig. 2 to 7, the side surface of the quantum dot structure 20 is opposite to the side surface of the optically denser medium layer 40, and the photoluminescence light emitted from the side surface 21 of the quantum dot structure 20 enters the optically denser medium layer 40 and propagates along the optically denser medium layer 40 until being emitted from the uneven surface 41.
In an embodiment, referring to fig. 2, further, the first optically thinner medium layer 30 is disposed below the quantum dot structure 20, and the second optically thinner medium layer 50 is disposed above the quantum dot structure 20, in which case, the side 21 of the quantum dot structure 20 is only opposite to the side of the optically denser medium layer 40, and all the photoluminescence light emitted from the side 21 of the quantum dot structure 20 enters the optically denser medium layer 40.
In another embodiment, referring to fig. 5, further, the first photo phobic layer 30 and the second photo phobic layer 50 are disposed around the lateral sides of the quantum dot structure 20. In addition, the preparation process is relatively simple because no recess is needed.
In another embodiment, referring to fig. 6 and fig. 7, further, the first optically phobic medium layer 30 is disposed above the quantum dot structure 20, and the second optically phobic medium layer 50 is disposed around the lateral side of the quantum dot structure 20, or the first optically phobic medium layer 30 is disposed around the lateral side of the quantum dot structure 20, and the second optically phobic medium layer 50 is disposed above the quantum dot structure 20.
In the above embodiments, further referring to fig. 3 and fig. 4, a groove 11 is disposed on a surface of the excitation light source 10 close to the quantum dot structure 20, such that the first optically phobic medium layer 30 is accommodated in the groove 11, the first optically phobic medium layer 30 is disposed around the side of the quantum dot structure 20 and below, the second optically phobic medium layer 50 is disposed above the quantum dot structure 20, or the second optically phobic medium layer 50 is disposed around the side or above of the quantum dot structure 20. Since the first light-thinning medium layer 30 occupies a position that is originally included in the excitation light source 10.
Similarly, the second optically lyophobic medium layer 50 may be disposed on a side of the quantum dot structure 20 away from the excitation light source 10, and further preferably, a groove 11 is also disposed on a component of the quantum dot structure 20 away from the excitation light source 10, so that the second optically lyophobic medium layer 50 is also accommodated in the groove 11.
It should be noted that, in the above embodiments, the first optically thinner medium layer 30 is disposed below the quantum dot structure 20, which means that there is the first optically thinner medium layer 30 directly below the quantum dot structure 20, that is, the bottom of the quantum dot structure 20 is located on the upper surface of the first optically thinner medium layer 30 or located inside the first optically thinner medium layer 30. The second light-phobic medium layer 50 is disposed above the quantum dot structure 20, which means that there is a second light-phobic medium layer 50 directly above the quantum dot structure 20, that is, the top of the quantum dot structure 20 is located on the lower surface of the second light-phobic medium layer 50 or inside the second light-phobic medium layer 50. The first light-thinning medium layer 30 or the second light-thinning medium layer 50 is disposed around the lateral side of the quantum dot structure 20, which means that there is no first light-thinning medium layer 30 or the second light-thinning medium layer 50 right below or right above the quantum dot structure 20.
In the above embodiments, since the first photo-phobic medium layer 30 and the second photo-phobic medium layer 50 are only used for providing the total reflection interface, the thickness thereof can be thinner, and the color purity of photoluminescence of the quantum dot structure 20 is not significantly reduced. Specifically, in all embodiments, the thickness of the first optically thinner medium layer 30 is less than one tenth of the thickness of the quantum dot structure 20, and the thickness of the second optically thinner medium layer 50 is less than one tenth of the thickness of the quantum dot structure 20.
In the above embodiments, the uneven surface 41 is formed by providing protrusions or recesses on the surface of the optically denser medium layer 40 close to the second optically thinner medium layer 50 or on the surface of the second optically thinner medium layer 50, and the protrusions and recesses change the surface smoothness, so that light can be emitted from the protrusions or recesses, and the light intensity of photoluminescence emitted from the side surface of the quantum dot structure 20 is separated from the light intensity emitted from the excitation light source 10 directly above.
In the above embodiments, the refractive index of the first optically thinner medium layer 30 may be 1 to 1.45, the refractive index of the second optically thinner medium layer 50 may be 1 to 1.45, and the refractive index of the optically denser medium layer 40 may be 1.45 to 3.
Further, in one embodiment, the first optically thinner medium layer 30 comprises a silicon dioxide layer or an air layer, the second optically thinner medium layer 50 comprises a silicon dioxide layer or an air layer, and the optically denser medium layer 40 comprises a silicon nitride layer. The refractive index of the air layer is 1, the refractive index of the silicon dioxide layer is 1.45, and the refractive index of the silicon nitride layer is 2.
In another embodiment, the first optically thinner medium layer 30 comprises an air layer, the second optically thinner medium layer 50 comprises an air layer, and the optically denser medium layer 40 comprises a silica layer, wherein the air layer can be formed by reserving a certain gap. Specifically, an optically-dense dielectric layer 40 may be provided, the optically-dense dielectric layer 40 is directly sleeved around the quantum dot structure, and a certain gap is reserved above and below the optically-dense dielectric layer 40, so as to obtain the structure of the present embodiment.
Of course, in other practical embodiments, the first optically thinner medium layer 30 is not limited to the above-mentioned silica layer or air layer, and the optically denser medium layer 40 is not limited to the above-mentioned silicon nitride layer or silica layer, and the optical waveguide effect can be formed by making the refractive index of the first optically thinner medium layer 30 smaller than that of the optically denser medium layer 40 and making the refractive index of the second optically thinner medium layer 50 smaller than that of the optically denser medium layer 40.
The air layer may be formed by forming a gap between the upper and lower structural layers.
In the above embodiments, the excitation light source 10 includes, but is not limited to, an LED excitation light source 10, an OLED excitation light source 10, an LCD excitation light source 10, or the like, as long as the light-emitting excitation quantum dot structure 20 can be excited.
In addition, the excitation light source 10 may include other functional structural layers such as a substrate 60, an epitaxial layer, a conductive layer, a current spreading layer, and a barrier layer, in addition to the structural layer capable of directly emitting light.
The invention also discloses a display module which comprises the LED chip structure and can be applied to products such as mobile phones, flat panels, notebook computers, televisions, AR/VR equipment, vehicle instruments and central control, outdoor displays, head-up displays (HUDs) and the like.
Taking the chip structure shown in fig. 5 as an example, a method for preparing the chip structure is specifically described below, which includes the following steps:
1) The excitation light sources 10 are prepared, including but not limited to LED excitation light sources 10, OLED excitation light sources 10, LCD excitation light sources 10, and the like.
2) A first light-thinning medium layer 30 and a light-dense medium layer 40 are sequentially prepared on the surface of the excitation light source 10.
3) The dense dielectric layer 40 is perforated to form a hole structure reaching as deep as the excitation light source 10 for placing the quantum dots.
4) Forming a patterned mask on the structure formed in the step 3), wherein the patterned mask is used for shielding structures except the hole structure, and filling the hole structure with quantum dots through the patterned mask.
Methods for preparing the patterned mask include, but are not limited to, spin-on photoresist, ink jet printing, or pressure sputtering.
5) And (3) manufacturing any structure which damages the surface flatness, such as bulges or depressions, on the surface of the optical density medium layer 40 by using a method such as etching.
6) And continuously preparing a second optically thinner medium layer 50 on the surface of the optically denser medium layer 40.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the claims. It should be noted that various changes and modifications can be made by those skilled in the art without departing from the spirit of the invention, and these changes and modifications are all within the scope of the invention. Therefore, the protection scope of the present patent should be subject to the appended claims.
Claims (9)
1. The utility model provides a chip structure, is in including excitation light source and setting quantum dot structure on the excitation light source, a serial communication port, still be equipped with light adjusting structure on the excitation light source, light adjusting structure is around setting up the side of quantum dot structure, light adjusting structure is including the first light sparse dielectric layer that stacks gradually, optically dense dielectric layer and second light sparse dielectric layer, first light sparse dielectric layer is compared the second light sparse dielectric layer is close to the excitation light source, being close to on optically dense dielectric layer the peripheral region on the surface of second light sparse dielectric layer one side or the peripheral region on the surface of second light sparse dielectric layer is uneven surface.
2. The chip structure according to claim 1, wherein a projection of the uneven surface on a plane of the excitation light source falls on an outer periphery of the excitation light source.
3. The chip structure according to claim 1 or 2, wherein a side of the quantum dot structure is directly opposite to a side of the optically denser medium layer.
4. The chip structure according to claim 3, wherein the arrangement scheme of the positions of the first optically thinner medium layer and the second optically thinner medium layer comprises any one of the following schemes:
the first scheme is as follows: the first light-thinning medium layer is arranged below the quantum dot structure, and the second light-thinning medium layer is arranged above the quantum dot structure;
scheme two is as follows: the first light-thinning medium layer is arranged below the quantum dot structure, and the second light-thinning medium layer is arranged on the side of the quantum dot structure in a surrounding mode;
and a third scheme is as follows: the first light-thinning medium layer is arranged on the lateral side of the quantum dot structure in a surrounding mode, and the second light-thinning medium layer is arranged on the lateral side of the quantum dot structure in a surrounding mode;
and the scheme is as follows: the first light-thinning medium layer is arranged on the lateral side of the quantum dot structure in a surrounding mode, and the second light-thinning medium layer is arranged above the quantum dot structure.
5. The chip structure according to any one of claims 1, 2 or 4, wherein a groove is disposed on a surface of the excitation light source near a side of the quantum dot structure, the first optically thinner medium layer is accommodated in the groove, the second optically thinner medium layer is disposed above the quantum dot structure, or the second optically thinner medium layer is disposed around a side of the quantum dot structure.
6. The chip structure according to any one of claims 1, 2 or 4, wherein the first optically thinner dielectric layer comprises a silicon dioxide layer or an air layer, the second optically thinner dielectric layer comprises a silicon dioxide layer or an air layer, and the optically denser dielectric layer comprises a silicon nitride layer; or the first light-thinning medium layer is an air layer, the second light-thinning medium layer is an air layer, and the light-tight medium layer is a silicon dioxide layer.
7. The chip structure according to claim 5, wherein the first optically thinner medium layer comprises a silicon dioxide layer or an air layer, the second optically thinner medium layer comprises a silicon dioxide layer or an air layer, and the optically denser medium layer comprises a silicon nitride layer; or the first light-thinning medium layer is an air layer, the second light-thinning medium layer is an air layer, and the light-tight medium layer is a silicon dioxide layer.
8. The chip structure according to any one of claims 1, 2, 4 or 7, wherein the excitation light source comprises an LED excitation light source, an OLED excitation light source or an LCD excitation light source.
9. A display module comprising the chip structure according to any one of claims 1 to 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110502474.6A CN115308944B (en) | 2021-05-08 | Chip structure and display module |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110502474.6A CN115308944B (en) | 2021-05-08 | Chip structure and display module |
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| CN115308944A true CN115308944A (en) | 2022-11-08 |
| CN115308944B CN115308944B (en) | 2024-06-11 |
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