CN115308944A - Chip structure and display module - Google Patents

Abstract

The invention discloses a chip structure and a display module, which comprise an excitation light source and a quantum dot structure arranged on the excitation light source, and are characterized in that the excitation light source is also provided with a light adjusting structure, the light adjusting structure is arranged on the side surface of the quantum dot structure in a surrounding manner, the light adjusting structure comprises a first light thinning medium layer, a light tight medium layer and a second light thinning medium layer which are sequentially stacked, the first light thinning medium layer is closer to the excitation light source than the second light thinning medium layer, and the surface of the light tight medium layer close to one side of the second light thinning medium layer or the peripheral area of the surface of the second light thinning medium layer is an uneven surface. The invention can separate the light intensity of the excitation light source from the light intensity of the quantum dot structure, avoid the light intensity of the excitation light source from being superposed on the light intensity of the quantum dot structure, and improve the photoluminescence color purity of the quantum dot structure.

Description

Chip structure and display module

technical field

The present invention relates to the technical field of semiconductor light emitting, more specifically, to a chip structure and a display module.

Background technique

Quantum dots are semiconductor nanostructures that have become a key technology for next-generation display applications due to their wide color gamut, high color purity, and small size.

However, for the application of quantum dot photoluminescence, referring to FIG. 1, if a quantum dot structure 20 is superimposed on the excitation light source 10, the light generated by the excitation light source 10 illuminates the quantum dot structure 20, and excites the quantum dot structure 20 to emit light, that is, the quantum dot structure 20 photoluminescence, the propagation of the photoluminescent light of the quantum dot structure 20 has anisotropy, that is, the upper surface and the side surface 21 of the quantum dot structure 20 can emit light outward, and the light of the excitation light source 10 is mainly from the excitation light source 10 is emitted directly above, causing the light intensity of the excitation light source 10 and the light intensity of the quantum dot structure 20 to be superimposed together. Referring to the light propagation path marked by the arrow in FIG. 1, since it is difficult to eliminate the light intensity of the excitation light source 10, the final The display produces color shift, which cannot take advantage of the high color purity of quantum dots.

In order to solve the above problems, some technologies use short-wavelength excitation light sources such as ultraviolet light, so that the human eye cannot perceive the existence of the excitation light source, but it will increase the difficulty and cost of the preparation of the excitation light source, and short-wavelength light may cause damage to the human eye. There are also some technologies that increase the color conversion rate by increasing the thickness of the quantum dot layer, but it will increase the difficulty of quantum dot coating or patterning, and the display resolution will decrease.

Contents of the invention

The purpose of the present invention is to overcome the above-mentioned defects in the prior art, provide a chip structure and a display module, separate the light intensity of the excitation light source from the light intensity of the quantum dot structure, and avoid superimposing the light intensity of the excitation light source on the quantum dot structure. In terms of light intensity, the photoluminescent color purity of the quantum dot structure is improved.

To achieve the above object, the technical scheme of the present invention is as follows:

A chip structure, comprising an excitation light source and a quantum dot structure arranged on the excitation light source, characterized in that the excitation light source is also provided with a light adjustment structure, and the light adjustment structure is arranged around the quantum dot structure The side of the optical adjustment structure includes a first optically thinning medium layer, an optically denser medium layer and a second optically thinning medium layer stacked in sequence, and the first optically thinning medium layer is closer to the optically thinning medium layer than the second optically thinning medium layer For the excitation light source, the peripheral area of the surface of the optically dense medium layer close to the second optically sparse medium layer or the peripheral area of the surface of the second optically sparse medium layer is an uneven surface.

Preferably, the projection of the uneven surface on the plane where the excitation light source is located falls on the periphery of the excitation light source.

Preferably, the side of the quantum dot structure is directly opposite to the side of the optically dense medium layer.

Preferably, the position setting scheme of the first optically thinning medium layer and the second optically thinning medium layer includes any of the following schemes:

Solution 1: the first optically thinning medium layer is disposed below the quantum dot structure, and the second optically thinning medium layer is disposed above the quantum dot structure;

Solution 2: the first optically thinning medium layer is arranged under the quantum dot structure, and the second optically thinning medium layer is arranged around the side of the quantum dot structure;

Scheme 3: the first optically thinning medium layer is arranged around the side of the quantum dot structure, and the second optically thinning medium layer is arranged around the side of the quantum dot structure;

Solution 4: The first optically thinning medium layer is arranged around the side of the quantum dot structure, and the second optically thinning medium layer is arranged above the quantum dot structure.

Preferably, a groove is provided on the surface of the excitation light source close to the quantum dot structure, the first optically thinning medium layer is accommodated in the groove, and the second optically thinning medium layer is arranged Above the quantum dot structure, or the second optical thinning medium layer is arranged around the side of the quantum dot structure.

Preferably, the first optically thinning medium layer includes a silicon dioxide layer or an air layer, the second optically thinning medium layer includes a silicon dioxide layer or an air layer, and the optically denser medium layer includes a silicon nitride layer.

Preferably, the first optically thinning medium layer is an air layer, the second optically thinning medium layer is an air layer, and the optically denser medium layer is a silicon dioxide layer.

Preferably, the excitation light source includes an LED excitation light source, an OLED excitation light source or an LCD excitation light source.

The present invention also discloses a display module, which includes the above-mentioned chip structure.

Implementing the embodiment of the present invention will have the following beneficial effects:

In the embodiment of the present invention, a light-regulating structure is provided on the side of the quantum dot structure. The light-regulating structure includes a first optically sparse medium layer, an optically dense medium layer, and a second optically sparse medium layer stacked in sequence, and emits light from the side of the quantum dot structure. The photoluminescent light enters the optically dense medium layer to propagate, since the refractive index of the first optically sparse medium layer or the second optically sparse medium layer is smaller than the refractive index of the optically dense medium layer, when the light reaches the optically dense medium layer When the interface of the first optically thinning medium layer or the second optically thinning medium layer, total reflection will occur at the interface of the first optically thinning medium layer or the second optically thinning medium layer, so that the photoluminescent light of the quantum dot structure is locked in Optically dense medium layer propagation, that is, the optical waveguide effect, until it reaches the uneven surface, the uneven surface can destroy the total reflection propagation path of the light, and the light locked in the optically dense medium layer is emitted from the uneven surface, so that the The photoluminescence light of the quantum dot structure is separated from the light emitted directly above the excitation light source through the optical waveguide effect, thereby improving the color purity of the photoluminescence of the quantum dot structure.

Description of drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only These are some embodiments of the present invention. Those skilled in the art can also obtain other drawings based on these drawings without creative work.

in:

FIG. 1 is a schematic structural diagram of a chip structure in the prior art.

FIG. 2 is a schematic structural diagram of a chip structure according to a specific embodiment of the present invention.

FIG. 3 is a schematic structural diagram of a chip structure according to a specific embodiment of the present invention.

FIG. 4 is a schematic structural diagram of a chip structure according to a specific embodiment of the present invention.

FIG. 5 is a schematic structural diagram of a chip structure according to a specific embodiment of the present invention.

FIG. 6 is a schematic structural diagram of a chip structure according to a specific embodiment of the present invention.

FIG. 7 is a schematic structural diagram of a chip structure according to a specific embodiment of the present invention.

Among them, in the figure, the excitation light source 10, the groove 11, the quantum dot structure 20, the side wall 21 of the quantum dot structure, the first optically thinning medium layer 30, the optically dense medium layer 40, the protrusion 41, the second optically thinning medium layer 50. Substrate 60.

Detailed ways

The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

Referring to FIGS. 2 to 7 , the present invention discloses a chip structure, including an excitation light source 10 and a quantum dot structure 20 arranged above the excitation light source 10, and a light adjustment structure is also included above the excitation light source 10, and the light adjustment structure is arranged around On the side of the quantum dot structure 20, the light adjustment structure includes a first optically sparse medium layer 30, an optically dense medium layer 40 and a second optically sparse medium layer 50 stacked in sequence, the first optically sparse medium layer 30 is close to the excitation light source 10, the second optically sparse medium layer The second optical thinning medium layer 50 is away from the excitation light source 10, and the peripheral area of the surface of the optically dense medium layer 40 near the second optical thinning medium layer 50 or the peripheral area of the surface of the second optical thinning medium layer 50 is an uneven surface 41 .

By laminating the first optically sparse medium layer 30 and the second optically sparse medium layer 50 on both sides of the optically dense medium layer 40 on the side of the quantum dot structure 20, the photoluminescence emitted from the side 21 of the quantum dot structure 20 The light enters the optically dense medium layer 40 and propagates. Since the refractive index of the first optically sparse medium layer 30 or the second optically sparse medium layer 50 is smaller than the refractive index of the optically dense medium layer 40, when the light reaches the optically dense medium layer 40 When the interface of the first optically thinning medium layer 30 or the second optically thinning medium layer 50, total reflection will occur at the interface of the first optically thinning medium layer 30 or the second optically thinning medium layer 50, so that the photoinduced quantum dot structure 20 The luminous light is locked in the optically dense medium layer 40 and propagates, that is, the optical waveguide effect, until it reaches the uneven surface 41, the uneven surface 41 can destroy the total reflection propagation path of the light, and the light locked in the optically dense medium layer 40 propagates never The light emitted from the flat surface 41 can separate the photoluminescent light from the side of the quantum dot structure 20 through the optical waveguide effect from the light emitted directly above the excitation light source 10, thereby improving the photoluminescent color purity of the quantum dot structure 20 . The separation of the superimposed light intensity propagating directly above from the upper surface of the quantum dot structure 20 is not considered here, because there will be other functional layers directly above the quantum dot structure 20 of the chip, which can block the emission from the upper surface of the quantum dot structure 20. The intensity of photoluminescence and the intensity of light emitted by the excitation light source 10 from the upper surface of the quantum dot structure 20 .

The "optical thinning" in the first optically thinning medium layer 30 and the second optically thinning medium layer 50 in this application is in contrast to the "optical density" in the optically dense medium layer 40, that is, the first optically thinning medium layer The refractive index of the second optically sparse medium layer 50 is smaller than that of the optically dense medium layer 40 .

In addition, since the photoluminescent light emitted from the side surface 21 of the quantum dot structure 20 propagates laterally in the optically dense medium layer 40, and guides the light to areas other than directly above the excitation light source 10, the first optically sparse medium layer 30 , the length of the optically dense medium layer 40 and the second optically sparse medium layer 50 continue to extend from the area directly above the excitation light source 10 to the outside, the thickness of the first optically sparse medium layer 30, the thickness of the optically dense medium layer 40 and the second The thickness of the optical thinning medium layer 50 may vary.

In a specific embodiment, the projection of the uneven surface 41 on the plane where the excitation light source 10 is located falls on the periphery of the excitation light source 10, so that the photoluminescent light on the side of the quantum dot structure 20 can be connected to the excitation light source 10 through the optical waveguide effect. The rays that exit directly above are completely separated.

In a specific embodiment, referring to FIGS. 2 to 7, the side of the quantum dot structure 20 is facing the side of the optically dense medium layer 40, and the photoluminescent light emitted from the side 21 of the quantum dot structure 20 enters the optically dense medium layer. 40 and propagates along the optically dense medium layer 40 until it emerges from the uneven surface 41.

In a specific embodiment, referring to FIG. 2 , further, the first optically thinning medium layer 30 is disposed below the quantum dot structure 20, and the second optically thinning medium layer 50 is disposed above the quantum dot structure 20. At this time, the quantum dot structure The side 21 of the dot structure 20 is only facing the side of the optically dense medium layer 40 , and all the photoluminescent light emitted from the side 21 of the quantum dot structure 20 enters the optically dense medium layer 40 .

In another specific embodiment, referring to FIG. 5 , further, the first optically thinning medium layer 30 and the second optically thinning medium layer 50 are both disposed around the sides of the quantum dot structure 20 . In addition, since no depression is required, the preparation process is relatively simple.

In another specific embodiment, referring to FIG. 6 and FIG. 7 , further, the first optically thinning medium layer 30 is disposed above the quantum dot structure 20 , and the second optically thinning medium layer 50 is disposed around the side of the quantum dot structure 20 Alternatively, the first optically rarefied medium layer 30 is disposed around the side of the quantum dot structure 20 , and the second optically sparse medium layer 50 is disposed above the quantum dot structure 20 .

In each of the above-mentioned embodiments, further, with reference to FIG. 3 and FIG. 4 , a groove 11 is provided on the surface of the exciting light source 10 close to the quantum dot structure 20, so that the first optically thinning medium layer 30 is accommodated in the groove 11, the first optically thinning medium layer 30 is arranged around and below the side of the quantum dot structure 20, the second optically thinning medium layer 50 is arranged above the quantum dot structure 20, or the second optically thinning medium layer 50 is arranged around the quantum dots The side or side of the structure 20. Since the first optical thinning medium layer 30 occupies the position originally belonging to the exciting light source 10 .

Similarly, the second optically thinning medium layer 50 can be disposed on the side of the quantum dot structure 20 away from the excitation light source 10, and further preferably, the component on the side of the quantum dot structure 20 away from the excitation light source 10 is also provided with a groove 11, The second optically thinning medium layer 50 is also accommodated in the groove 11 .

It is worth noting that, in the above-mentioned embodiments, the first optically thinning medium layer 30 is arranged under the quantum dot structure 20, which means that there is a first optically thinning medium layer 30 directly below the quantum dot structure 20, that is, the quantum dot structure 20 The bottom of is located on the upper surface of the first optically thinning medium layer 30 or inside the first optically thinning medium layer 30 . The above-mentioned second optically thinning medium layer 50 is arranged above the quantum dot structure 20, which means that there is a second optically thinning medium layer 50 directly above the quantum dot structure 20, that is, the top of the quantum dot structure 20 is located in the second optically thinning medium layer The lower surface of the second optical thinning medium layer 50 may be located on the lower surface thereof. The first optically thinning medium layer 30 or the second optically thinning medium layer 50 is arranged around the side of the quantum dot structure 20, which means that there is no first optically thinning medium layer 30 or the second optically thinning medium layer directly below or directly above the quantum dot structure 20. Two optically thinning medium layers 50 .

In each of the above-mentioned embodiments, since the first optically thinning medium layer 30 and the second optically thinning medium layer 50 are only used to provide a total reflection interface, their thicknesses can be thinner without significantly reducing the photoluminescence of the quantum dot structure 20. color purity. Specifically, in all embodiments, the thickness of the first optically sparse medium layer 30 is less than one tenth of the thickness of the quantum dot structure 20, and the thickness of the second optically sparse medium layer 50 is less than one tenth of the thickness of the quantum dot structure 20 .

In the above-mentioned embodiments, the uneven surface 41 is formed by setting the surface of the optically dense medium layer 40 close to the second optically sparse medium layer 50 or the surface of the second optically sparse medium layer 50 with protrusions or depressions, The protrusions and depressions both change the surface smoothness, so that light can exit from the protrusions or depressions, thereby distinguishing the light intensity of the photoluminescence emitted from the side of the quantum dot structure 20 from the light intensity emitted directly upward by the excitation light source 10 .

In the above-mentioned embodiments, the refractive index of the first optically thinning medium layer 30 may be 1 to 1.45, the refractive index of the second optically thinning medium layer 50 may be 1 to 1.45, and the refractive index of the optically dense medium layer 40 may be 1.45 to 1.45. 3.

Further, in a specific embodiment, the first optically thinning medium layer 30 includes a silicon dioxide layer or an air layer, the second optically thinning medium layer 50 includes a silicon dioxide layer or an air layer, and the optically denser medium layer 40 includes a nitride silicon layer. The air layer has a refractive index of 1, the silicon dioxide layer has a refractive index of 1.45, and the silicon nitride layer has a refractive index of 2.

In another specific embodiment, the first optically thinning medium layer 30 includes an air layer, the second optically thinning medium layer 50 includes an air layer, and the optically dense medium layer 40 includes a silicon dioxide layer. The air layer can be realized by reserving a certain gap. . Specifically, an optically dense medium layer 40 can be provided, and the optically dense medium layer 40 is directly sleeved around the quantum dot structure, and a certain gap is reserved above and below the optically dense medium layer 40, thereby obtaining the structure of this specific embodiment.

Of course, in other practicable embodiments, the first optically thinning medium layer 30 is not limited to the silicon dioxide layer or the air layer listed above, and the first optically thinning medium layer 30 is not limited to the silicon dioxide layer or the air layer listed above. layer, the optically dense medium layer 40 is not limited to the silicon nitride layer or silicon dioxide layer listed above, as long as the refractive index of the first optically sparse medium layer 30 is lower than the refractive index of the optically dense medium layer 40, and the second light The optical waveguide effect can be formed when the refractive index of the thin medium layer 50 is smaller than that of the optically dense medium layer 40 .

The air layer can be formed by forming a gap between the upper and lower structural layers.

In the above embodiments, the excitation light source 10 includes and is not limited to the LED excitation light source 10 , the OLED excitation light source 10 or the LCD excitation light source 10 , as long as it can emit light and excite the quantum dot structure 20 .

In addition, the excitation light source 10 may include other functional structural layers such as a substrate 60 , an epitaxial layer, a conductive layer, a current spreading layer, and a blocking layer, in addition to the structural layer capable of directly emitting light.

The present invention also discloses a display module, which includes the above-mentioned LED chip structure. The display module can be applied to mobile phones, tablets, notebook computers, TVs, AR/VR equipment, vehicle instruments and central controls, outdoor displays, and head-up displays. (HUD) and other display modules.

Taking the chip structure shown in FIG. 5 as an example, a method for preparing a chip structure is described in detail below, including the following steps:

1) Prepare excitation light source 10, including but not limited to LED excitation light source 10, OLED excitation light source 10, LCD excitation light source 10, etc.

2) Prepare the first optically thinning medium layer 30 and the optically dense medium layer 40 sequentially on the surface of the exciting light source 10 .

3) Opening holes in the optically dense medium layer 40 to form a hole structure as deep as the excitation light source 10 for placing quantum dots.

4) Forming a patterned mask on the structure formed in step 3), the patterned mask is used to shield structures other than the hole structure, and the hole structure is filled with quantum dots through the patterned mask.

The preparation methods of the patterned mask include but are not limited to methods such as spin-coating photoresist, inkjet printing or pressure sputtering.

5) Making protrusions or depressions on the surface of the optically dense medium layer 40 by means of etching or the like, and any structure that destroys the flatness of the surface.

6) Continue to prepare the second optically thinning medium layer 50 on the surface of the optically dense medium layer 40 .

The above-mentioned embodiments only express several implementation modes of the present invention, and the description thereof is relatively specific and detailed, but should not be construed as limiting the scope of the patent application. It should be pointed out that those skilled in the art can make several modifications and improvements without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent for the present invention should be based on the appended claims.

Claims (9)

1. The utility model provides a chip structure, is in including excitation light source and setting quantum dot structure on the excitation light source, a serial communication port, still be equipped with light adjusting structure on the excitation light source, light adjusting structure is around setting up the side of quantum dot structure, light adjusting structure is including the first light sparse dielectric layer that stacks gradually, optically dense dielectric layer and second light sparse dielectric layer, first light sparse dielectric layer is compared the second light sparse dielectric layer is close to the excitation light source, being close to on optically dense dielectric layer the peripheral region on the surface of second light sparse dielectric layer one side or the peripheral region on the surface of second light sparse dielectric layer is uneven surface.

2. The chip structure according to claim 1, wherein a projection of the uneven surface on a plane of the excitation light source falls on an outer periphery of the excitation light source.

3. The chip structure according to claim 1 or 2, wherein a side of the quantum dot structure is directly opposite to a side of the optically denser medium layer.

4. The chip structure according to claim 3, wherein the arrangement scheme of the positions of the first optically thinner medium layer and the second optically thinner medium layer comprises any one of the following schemes:

the first scheme is as follows: the first light-thinning medium layer is arranged below the quantum dot structure, and the second light-thinning medium layer is arranged above the quantum dot structure;

scheme two is as follows: the first light-thinning medium layer is arranged below the quantum dot structure, and the second light-thinning medium layer is arranged on the side of the quantum dot structure in a surrounding mode;

and a third scheme is as follows: the first light-thinning medium layer is arranged on the lateral side of the quantum dot structure in a surrounding mode, and the second light-thinning medium layer is arranged on the lateral side of the quantum dot structure in a surrounding mode;

and the scheme is as follows: the first light-thinning medium layer is arranged on the lateral side of the quantum dot structure in a surrounding mode, and the second light-thinning medium layer is arranged above the quantum dot structure.

5. The chip structure according to any one of claims 1, 2 or 4, wherein a groove is disposed on a surface of the excitation light source near a side of the quantum dot structure, the first optically thinner medium layer is accommodated in the groove, the second optically thinner medium layer is disposed above the quantum dot structure, or the second optically thinner medium layer is disposed around a side of the quantum dot structure.

6. The chip structure according to any one of claims 1, 2 or 4, wherein the first optically thinner dielectric layer comprises a silicon dioxide layer or an air layer, the second optically thinner dielectric layer comprises a silicon dioxide layer or an air layer, and the optically denser dielectric layer comprises a silicon nitride layer; or the first light-thinning medium layer is an air layer, the second light-thinning medium layer is an air layer, and the light-tight medium layer is a silicon dioxide layer.

7. The chip structure according to claim 5, wherein the first optically thinner medium layer comprises a silicon dioxide layer or an air layer, the second optically thinner medium layer comprises a silicon dioxide layer or an air layer, and the optically denser medium layer comprises a silicon nitride layer; or the first light-thinning medium layer is an air layer, the second light-thinning medium layer is an air layer, and the light-tight medium layer is a silicon dioxide layer.

8. The chip structure according to any one of claims 1, 2, 4 or 7, wherein the excitation light source comprises an LED excitation light source, an OLED excitation light source or an LCD excitation light source.

9. A display module comprising the chip structure according to any one of claims 1 to 8.

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