TWM501533U - Light emitting diode - Google Patents

Abstract

A light emitting diode comprises: a substrate with a circuit structure and a reflection cup, a light emitting diode chip and a packaging material. The light emitting diode chip is positioned in a bottom of the reflection cup and electrically connected with the circuit structure, the packaging material is received in the reflection cup and covers the light emitting diode chip. The light emitting diode chip is an ultraviolet light emitting diode chip. The light emitting diode also includes a quantum dot film arranged on the packaging material, the quantum dot film includes two transparent sheets, and a first quantum dot, a second quantum dot and a third quantum dot sandwiched between the two transparent sheets. The first quantum dot, the second quantum dot and the third quantum dot respectively emits red light, green light and blue light when excited by ultraviolet light.

Description

Light-emitting diode

The invention relates to a light-emitting diode, in particular to a light-emitting diode of various color lights.

As a new kind of light source, the light-emitting diode has been widely used in various occasions, and the demand for light-emitting diodes of different color lights is also increasing. The conventional process for manufacturing light-emitting diodes of different color light is to first produce a light-emitting diode wafer capable of emitting different color lights by using an epitaxial method, and fix the light-emitting diode wafer on a substrate, and then adopt a transparent package. The light-emitting diodes of different color lights are encapsulated. For example, the orange light emitting diode is a GaAsP wafer that can emit orange light and is fixed on a substrate, and then encapsulated by a transparent packaging material, and so on, and the manufacturing method of other color light emitting diodes is similar.

However, the conventional method of manufacturing a light-emitting diode of different color lights requires a light-emitting diode chip which can emit different color lights, which not only increases the production cost, but also is disadvantageous for a small-volume customized production mode.

The present invention is directed to providing a light emitting diode to overcome the above drawbacks.

A light emitting diode comprising a substrate having a circuit structure and a reflective cup, a light emitting diode chip and a packaging material, wherein the light emitting diode chip is disposed at a bottom of the reflective cup of the substrate and electrically connected to the circuit structure of the substrate, the packaging material It is disposed in the reflective cup of the substrate and covers the light emitting diode wafer. The light emitting diode chip is an ultraviolet light emitting diode chip, and the light emitting diode further includes a quantum dot film disposed on the packaging material, the quantum dot film comprising two transparent sheets, and a combination of one or more of a first type of quantum dot, a second type of quantum dot, and a third type of quantum dot disposed between two transparent sheets, the first type of quantum dot emitting red light when excited by ultraviolet light The second type quantum dot emits green light when excited by ultraviolet light, and the third type quantum dot emits blue light when excited by ultraviolet light.

Further, the encapsulating material is a transparent encapsulating material. The encapsulating material is epoxy resin, silicone rubber or polymethyl methacrylate. The encapsulating material does not contain phosphor powder or quantum dots.

The quantum dots have an average particle diameter of less than 15 nm. The first type of quantum dots are CdSe quantum dots having an average particle diameter of 9 to 11 nm. The second type of quantum dots are CdSe quantum dots having an average particle diameter of 4 to 6 nm. The third type of quantum dots are CdSe quantum dots having an average particle diameter of 1-3 nm.

In the light emitting diode provided by the present invention, an ultraviolet light emitting diode chip is disposed at the bottom of the groove of the substrate, the light emitting diode chip is encapsulated in a transparent packaging material, and then the first type quantum dot is disposed on the packaging material, A quantum dot film of a second type of quantum dot and a third type of quantum dot. By selecting the particle size of the quantum dots in the quantum dot film and the ratio of the quantum dots of different particle sizes, it is possible to present all visible light colors of nature. The light-emitting diode provided by the present invention not only has a low production cost, but also can be customized in a small batch production mode.

11‧‧‧Substrate

111‧‧‧Circuit structure

112‧‧‧Reflection Cup

12‧‧‧Light Emitter Wafer

13‧‧‧Packaging materials

14‧‧‧Quantum dot film

141‧‧‧First transparent sheet

142‧‧‧Second transparent sheet

20‧‧ ‧ quantum dots

FIG. 1 is a schematic view of a light emitting diode provided by the present invention.

The present invention will be further described in detail below with reference to the accompanying drawings.

Referring to FIG. 1 , the present invention provides a light emitting diode comprising a substrate 11 having a circuit structure 111 and a reflective cup 112 , a light emitting diode chip 12 , a packaging material 13 , and a quantum dot film 14 .

The light emitting diode chip 12 is disposed at the bottom of the reflective cup 112 of the substrate 11 , and the light emitting diode wafer 12 is electrically connected to the circuit structure 111 of the substrate 11 . The light emitting diode chip 12 is an ultraviolet light emitting diode chip 12.

The encapsulation material 13 is disposed in the reflective cup 112 of the substrate 11 and encapsulates the LED substrate 12 . The encapsulating material 13 is a transparent encapsulating material. The encapsulating material 13 may be selected from materials such as epoxy resin, silicone rubber or polymethyl methacrylate. The encapsulating material 13 does not contain phosphor powder or quantum dots.

The quantum dot film 14 is disposed on the encapsulation material 13. The quantum dot film 14 includes a first transparent sheet 141 and a second transparent sheet 142, and a first type and a second type are uniformly disposed between the first transparent sheet 141 and the second transparent sheet 142. And a combination of one or more of the third type quantum dots 20. The first transparent sheet 141 and the second transparent sheet 142 are hard materials. It can be understood that the first transparent sheet 141 and the second transparent sheet 142 may also be flexible materials.

Specifically, first, a first transparent sheet 141 is provided, and quantum dots 20 are uniformly disposed on the first transparent sheet 141 to provide a second transparent sheet 142 overlying the quantum dots 20. Then, the first transparent sheet 141 and the second transparent sheet 142 are attached by heating to obtain a quantum dot film 14, and the quantum dots 20 are located on the first transparent sheet 141 and the second transparent sheet. Between 142. Finally, the quantum dot film 14 is placed on the encapsulation material 13. It should be noted that the encapsulating material 13 used in the present invention has thermal curability or ultraviolet curability, and the quantum dot film 14 can be adhered to the encapsulating material 13 before the encapsulating material 13 is cured. The quantum dot film 14 is fixed on the encapsulation material 13.

The material of the quantum dot 20 may be selected from CdS, CdSe, CdTe, CdPo, ZnS, ZnSe, ZnTe, ZnTe, ZnPo, MgS, MgSe, MgTe, PbSe, PbS, PbTe, HgS, HgSe, HgTe, CdS _1-x Se. _{x, BaTiO 3, PbZrO 3,} PbZn x Ti 1-x O 3, SrTiO 3, LaMnO 3, one kind of ₃ CaMnO ₃ and La _1-x Ca _x MnO or several mating. The quantum dots 20 have an average particle diameter of less than 15 nm.

The quantum dots 20 can generate fluorescence under the excitation of ultraviolet light emitted from the ultraviolet light emitting diode chip 12. More importantly, the quantum dots 20 of different particle sizes can generate different wavelengths when excited by ultraviolet light. The light, that is, the wavelength at which the quantum dot 20 emits light is related to the particle diameter of the quantum dot 20, which emits red light when excited by ultraviolet light, and the second type quantum dot 20 is excited by ultraviolet light. The green light is emitted, and the third type quantum dot 20 emits blue light when excited by ultraviolet light. For example, the first type quantum dot 20 is a CdSe quantum dot 20 having an average particle diameter of 9-11 nm, and emits red light when excited by ultraviolet light, and the second type quantum dot 20 is a CdSe quantum having an average particle diameter of 4-6 nm. Point 20, which emits green light when excited by ultraviolet light, and CdSe quantum dot 20 of the third type quantum dot 20 having an average particle diameter of 1-3 nm emits blue light when excited by ultraviolet light.

Preferably, the first type quantum dots 20 are CdSe quantum dots 20 having an average particle diameter of 10 nm. The second type quantum dot 20 is a CdSe quantum dot 20 having an average particle diameter of 5 nm. The third type quantum dot 20 has a CdSe quantum dot 20 having an average particle diameter of 2 nm.

A specific embodiment of the number ratio of the first type, the second type, and the third type quantum dot 20 in the quantum dot film 14 is as follows:

First Embodiment: When only the first type quantum dot 20 is included in the quantum dot film 14, the light emitting diode manufactured by the ultraviolet light emitting diode chip 12 emits red light.

The second embodiment: the ratio of the number of the first type quantum dots 20 to the second type quantum dots 20 included in the quantum dot film 14 is 75%: 25%, and the light emitting diode manufactured by the ultraviolet light emitting diode chip 12 is used. The polar body glows orange.

The third embodiment: the ratio of the number of the first type quantum dots 20 to the second type quantum dots 20 included in the quantum dot film 14 is 50%: 50%, and the light emitting diode manufactured by the ultraviolet light emitting diode chip 12 is used. The polar body glows yellow.

Fourth Embodiment: When only the second type quantum dot 20 is included in the quantum dot film 14, the light emitting diode manufactured by the ultraviolet light emitting diode chip 12 emits green light.

Fifth Embodiment: The quantum dot film 14 includes only the third type quantum dot 20, and the light emitting diode manufactured by the ultraviolet light emitting diode chip 12 emits blue light.

Sixth embodiment: the ratio of the number of the first type quantum dots 20 to the third type quantum dots 20 included in the quantum dot film 14 is 25%: 75%, and the light emitting diode manufactured by the ultraviolet light emitting diode chip 12 is used. The polar body glows blue and purple.

Seventh embodiment: the ratio of the number of the first type quantum dots 20 to the third type quantum dots 20 included in the quantum dot film 14 is 50%: 50%, and the light emitting diode manufactured by the ultraviolet light emitting diode chip 12 is used. The polar body emits purple light.

The eighth embodiment: the ratio of the number of the first type quantum dots 20 to the third type quantum dots 20 included in the quantum dot film 14 is 75%: 25%, and the light emitting diode manufactured by the ultraviolet light emitting diode chip 12 is used. The polar body glows red and purple.

Ninth Embodiment: The ratio of the number of the first type quantum dots 20, the second type quantum dots 20, and the third type quantum dots 20 included in the quantum dot film 14 is 33%: 33%: 34%, and is combined with ultraviolet light emission. The light-emitting diode manufactured by the diode wafer 12 emits white light.

It should be noted that the different color lights emitted by the light-emitting diodes provided by the present invention are not limited to the above nine embodiments.

The present invention provides a light-emitting diode capable of emitting different color lights, and by changing the number ratio of the first type, the second type, and the third type quantum dot 20 in the quantum dot film 14, a variety of visible light colors can be produced. Light-emitting diodes can reduce production costs and meet the requirements of small-volume customized production models.

The technical content and technical features of the present invention have been disclosed as above, but those skilled in the art can still make various substitutions and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of the present invention should not be limited by the scope of the invention, but should be construed as being included in the appended claims.

11‧‧‧Substrate

111‧‧‧Circuit structure

112‧‧‧Reflection Cup

12‧‧‧Light Emitter Wafer

13‧‧‧Packaging materials

14‧‧‧Quantum dot film

141‧‧‧First transparent sheet

142‧‧‧Second transparent sheet

20‧‧ ‧ quantum dots

Claims (6)

A light emitting diode comprising a substrate having a circuit structure and a reflective cup, a light emitting diode chip and a packaging material, wherein the light emitting diode chip is disposed at a bottom of the reflective cup of the substrate and electrically connected to the circuit structure of the substrate, the packaging material The LED is disposed in the reflective cup of the substrate and encapsulates the LED chip. The improvement is that the LED is an ultraviolet light emitting diode chip, and the light emitting diode further includes a light emitting diode. a quantum dot film on the encapsulating material, the quantum dot film comprising two transparent sheets, and a first type of quantum dots, a second type of quantum dots, and a third type of quantum dots disposed between the two transparent sheets One or more combinations of the first type of quantum dots emitting red light when excited by ultraviolet light, the second type of quantum dots emitting green light when excited by ultraviolet light, and the third type of quantum dots being excited by ultraviolet light It emits blue light. The luminescent diode of claim 1, wherein the encapsulating material does not contain phosphor powder or quantum dots. The light-emitting diode according to claim 1, wherein the quantum dots have an average particle diameter of less than 15 nm. The light-emitting diode according to claim 3, wherein the first type of quantum dots are CdSe quantum dots having an average particle diameter of 9 to 11 nm. The light-emitting diode according to claim 3, wherein the second-type quantum dots are CdSe quantum dots having an average particle diameter of 4-6 nm. The light-emitting diode according to claim 3, wherein the third-type quantum dot is a CdSe quantum dot having an average particle diameter of 1-3 nm.