TW201508780A - Method for manufacturing alloy chip resistor - Google Patents
Method for manufacturing alloy chip resistor Download PDFInfo
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- TW201508780A TW201508780A TW102130508A TW102130508A TW201508780A TW 201508780 A TW201508780 A TW 201508780A TW 102130508 A TW102130508 A TW 102130508A TW 102130508 A TW102130508 A TW 102130508A TW 201508780 A TW201508780 A TW 201508780A
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Abstract
Description
本發明係有關於一種合金晶片電阻器製造方法，尤其是指一種透過以雷射切割或沖壓搭配雷射切割的方式來生產製造合金晶片電阻器，以提高合金晶片電阻器的良率。The invention relates to a method for manufacturing an alloy wafer resistor, in particular to a method for manufacturing an alloy wafer resistor by laser cutting or stamping with laser cutting to improve the yield of the alloy wafer resistor.
按，由於合金晶片電阻器在較大功率及超低電阻值時具有穩定特性，因此，常被應用於高精度的電流檢知器，也是目前電阻器選用的趨勢。又，合金晶片電阻器雖然具有上述優點，但其卻有阻值精確度較難掌控的缺點，因此，在該合金晶片電阻器之製程中通常會有阻值修整微調之步驟，以提高該合金晶片電阻器之阻值的精確度。According to the alloy chip resistors, which have stable characteristics at higher power and ultra-low resistance values, they are often used in high-precision current detectors, which is also the trend of resistors. Moreover, although the alloy wafer resistor has the above advantages, it has the disadvantage that the resistance accuracy is difficult to control. Therefore, in the process of the alloy chip resistor, there is usually a step of trimming and trimming to improve the alloy. The accuracy of the resistance of the chip resistor.
合金晶片電阻器之阻值的形成主要是依據下列公式所得：The formation of the resistance of the alloy chip resistor is mainly based on the following formula:
，其中： ,among them:
Ｒ，代表電阻值，市場需求容差主要以±１％為主。R, representing the resistance value, the market demand tolerance is mainly dominated by ±1%.
，代表導體長度，以沖壓／蝕刻方式在本體產生阻值路徑，藉由阻值路徑的差異產生出不同電阻值之產品。, representing the length of the conductor, creating a resistance path in the body by stamping/etching, and producing different resistance values by the difference of the resistance paths.
Ａ，代表截面積，因合金板材係以輾壓方式生產，板材本身即有加工公差，一般要求公差在±０.０１～±０.０３ｍｍ以內。A, representing the cross-sectional area, because the alloy sheet is produced by rolling, the sheet itself has machining tolerances, and the general tolerance is within ±0.01~±0.03mm.
ρ，代表電阻係數，每批合金板原材之電阻係數因冶煉的差異，都會有些微變化。ρ, which represents the resistivity, the resistivity of each batch of alloy plate material will vary slightly due to the difference in smelting.
由上述之公式及說明可知，合金板材的電阻係數、截面積及阻值路徑…等因素在生產過程中均為變數，在各項變數交叉變化影響之下形成成品電阻值分佈過大無法集中或偏離目標值，加上市場需求主要是以容差±１％的合金晶片電阻器產品為主力，過度分散的電阻值就無法滿足需求，也降低了產品的良品率。於是如何透過製程管理及加工技術的控制來提高電阻值的集中度及符合目標值，成了業界致力研究的課題。It can be seen from the above formula and description that the resistivity, cross-sectional area and resistance path of the alloy sheet are all variable in the production process, and the distribution of the resistance value of the finished product is too large to be concentrated or deviated under the influence of the cross-variation of various variables. The target value, plus the market demand is mainly based on the tolerance of ±1% of the alloy chip resistor products, the excessively dispersed resistance value can not meet the demand, but also reduce the product yield. Therefore, how to improve the concentration of resistance values and meet the target value through the control of process management and processing technology has become a topic of research in the industry.
目前合金晶片電阻器生產模式大致可分為二種模式：At present, the production mode of alloy chip resistors can be roughly divided into two modes:
１、未修阻（製程短／良率低）：直接以沖壓／蝕刻製程決定電阻值，不再進行任何修阻加工。而沖壓／蝕刻條件為經多次試驗，驗證得到較佳的製程條件（阻值路徑），，此一製程方式電性平均製程良率約為４０～６０％。1. Unrepaired (short process/low yield): The resistance value is determined directly by the stamping/etching process, and no repair processing is performed any more. The stamping/etching conditions are verified by multiple tests to obtain better process conditions (resistance path), and the electrical average process yield of this process mode is about 40-60%.
２、修阻（製程長／良率高）：合金板材在沖壓時設定初Ｒ值為目標值的－１０％左右，再以修阻製程分段或單顆以研磨／切割／切削…等方式進行電阻值修正（變更截面積，即令截面積變小，以使電阻值上升），令經修阻製程後之合金晶片電阻器之電阻值符合需求。此一製程之電性良率約可提昇至８０％以上。然而，此一修阻製程，必須事先增加如斷單邊、群體電阻值量測、分類…等數道製程，導致延長製程時程及增加設備、人力、耗材…等的支出。2, repair resistance (long process / high yield): alloy sheet is set at the initial R value of about -10% of the target value, and then repaired process segmentation or single grinding / cutting / cutting ... Correction of the resistance value (changing the cross-sectional area, that is, making the cross-sectional area smaller, so that the resistance value is increased), so that the resistance value of the alloy wafer resistor after the repair process is satisfactory. The electrical yield of this process can be increased to more than 80%. However, in this repair process, it is necessary to increase the number of processes such as breaking unilateral, group resistance measurement, classification, etc. in advance, resulting in prolonged process time and increased expenditure on equipment, manpower, consumables, and the like.
今，本發明人即是鑑於習知技術之缺失，故而研發提供一種合金晶片電阻器之製造方法，以使合金晶片電阻器在阻值精確度、產品良率方面，能夠符合產業的需求。Nowadays, the present inventors have developed a method for manufacturing an alloy wafer resistor in view of the lack of the prior art, so that the alloy wafer resistor can meet the industrial requirements in terms of resistance accuracy and product yield.
本發明之主要目的，係提供一種合金晶片電阻器製造方法，主要是在生產過程中適時的調整阻值路徑長度，以因應相關變數的變化，達到提高電阻值集中度與良率之目的。The main object of the present invention is to provide a method for manufacturing an alloy wafer resistor, which is mainly to adjust the resistance path length in a timely manner during the production process, so as to increase the concentration concentration and the yield of the resistance value in response to the change of the relevant variables.
上述本發明之主要目的與功效，是由以下之具體技術手段所達成：The above main objects and effects of the present invention are achieved by the following specific technical means:
一種合金晶片電阻器製造方法，係包括以下步驟：A method for manufacturing an alloy wafer resistor includes the following steps:
（ａ）依據所需之特性，選用一合金板之材料；(a) selecting an alloy sheet material depending on the desired characteristics;
（ｂ）依需求阻值預先設計一符合該需求阻值之阻值路徑的切割圖型，再以雷射切割製程於該合金板上依據該切割圖形切割出複數個合金晶片電阻器個體半成品，令該合金晶片電阻器個體半成品的中段為電阻本體區域，該合金晶片電阻器個體半成品的兩端為外露導體區域及連結相鄰之該合金晶片電阻器個體半成品的連結區域，以在合金板上形成連續之合金晶片電阻器半成品矩陣或合金晶片電阻器半成品條；(b) pre-designing a cutting pattern conforming to the resistance value of the required resistance value according to the required resistance value, and then cutting a plurality of individual semi-finished products of the alloy chip resistor according to the cutting pattern on the alloy plate by a laser cutting process, The middle section of the individual semi-finished product of the alloy wafer resistor is a resistive body region, and the two ends of the individual semi-finished products of the alloy wafer resistor are an exposed conductor region and a joint region connecting the adjacent semi-finished products of the adjacent alloy die resistor to the alloy plate. Forming a continuous alloy wafer resistor semi-finished matrix or alloy wafer resistor semi-finished strip;
（ｃ）於該合金晶片電阻器個體半成品的本體區域包覆有絕緣體；(c) covering the body region of the individual semi-finished product of the alloy wafer resistor with an insulator;
（ｄ）在合金晶片電阻器兩端外露導體區域，以電鍍方式鍍上銅金屬，以形成導電銅端電極；(d) exposing the conductor region at both ends of the alloy wafer resistor, plating copper metal by electroplating to form a conductive copper terminal electrode;
（ｅ）再以模具將原合金晶片電阻器矩陣或合金電阻條進行沖壓或切割，以形成複數個合金晶片電阻器個體［請參看第三圖］；(e) further stamping or cutting the original alloy wafer resistor matrix or alloy resistance strip by a mold to form a plurality of individual alloy wafer resistor bodies [refer to the third figure];
（ｆ）最後再於各個合金晶片電阻器個體的導電銅端極鍍上導電金屬形成電極，藉此即成為合金晶片電阻器成品。(f) Finally, a conductive metal is plated on the conductive copper terminal of each individual alloy die resistor to form an electrode, thereby becoming a finished alloy resistor.
如上所述之合金晶片電阻器製造方法的較佳實施例中，該合金板係選自鎳鉻合金、鎳鉻鋁合金、銅鎳合金、鐵鉻鋁合金或錳銅合金其中之一。In a preferred embodiment of the method of fabricating an alloy wafer resistor as described above, the alloy plate is selected from one of a nickel-chromium alloy, a nickel-chromium-aluminum alloy, a copper-nickel alloy, an iron-chromium-aluminum alloy, or a manganese-copper alloy.
如上所述之合金晶片電阻器製造方法的較佳實施例中，在步驟（ｂ）之前，於待切合金板上至少取樣一樣品，並先量測該樣品之電阻值，依該樣品量測值以程式控制調整雷射切割形狀或切割線條的長短。In a preferred embodiment of the method for manufacturing an alloy wafer resistor as described above, at least one sample is sampled on the alloy plate to be cut before the step (b), and the resistance value of the sample is first measured, and the sample is measured according to the sample. The value is programmed to adjust the length of the laser cut shape or cut line.
如上所述之合金晶片電阻器製造方法的較佳實施例中，該導電金屬為選自鎳、錫或銀其中之一或二種以上並採層疊設置。In a preferred embodiment of the method for manufacturing an alloy wafer resistor as described above, the conductive metal is one or more selected from the group consisting of nickel, tin or silver and laminated.
如上所述之合金晶片電阻器製造方法的較佳實施例中，於該合金晶片電阻器個體半成品的本體區域所包覆之絕緣體係採射出成型、塗裝、曝光顯影其中之一的方式形成。In a preferred embodiment of the method for fabricating an alloy wafer resistor as described above, the insulating system coated in the body region of the individual semi-finished product of the alloy wafer resistor is formed by one of molding, painting, exposure and development.
上述本發明之主要目的與功效，亦可由以下之具體技術手段所達成：The above main objects and effects of the present invention can also be achieved by the following specific technical means:
一種合金晶片電阻器製造方法，係包括以下步驟：A method for manufacturing an alloy wafer resistor includes the following steps:
（ａ）依據所需之特性，選用一合金板之材料；(a) selecting an alloy sheet material depending on the desired characteristics;
（ｂ）依需求阻值預先設計一切割圖型，先以模具沖壓出合金晶片電阻器之外型，以於該合金板上得到複數個合金晶片電阻器個體半成品，令該合金晶片電阻器個體半成品的中段為電阻本體區域，該合金晶片電阻器個體半成品的兩端為外露導體區域及連結相鄰之該合金晶片電阻器個體半成品的連結區域，以在合金板上形成連續之合金晶片電阻器半成品矩陣或合金晶片電阻器半成品條；(b) pre-designing a cutting pattern according to the required resistance value, first stamping out the outer shape of the alloy wafer resistor with the mold, so as to obtain a plurality of individual semi-finished products of the alloy chip resistor on the alloy plate, so that the alloy chip resistor individual The middle section of the semi-finished product is a resistive body region, and the two ends of the individual semi-finished products of the alloy chip resistor are an exposed conductor region and a joint region connecting the adjacent semi-finished products of the alloy chip resistor to form a continuous alloy wafer resistor on the alloy plate. Semi-finished matrix or semi-finished strip of alloy wafer resistor;
（ｃ）在該合金晶片電阻器個體半成品的中段電阻本體區域，再以雷射切割製程切割阻值路徑；(c) cutting the resistance path by a laser cutting process in the middle resistor body region of the individual semi-finished product of the alloy wafer resistor;
（ｄ）於該合金晶片電阻器個體半成品的本體區域包覆有絕緣體；(d) covering the body region of the individual semi-finished product of the alloy wafer resistor with an insulator;
（ｅ）在合金晶片電阻器兩端外露導體區域，以電鍍方式鍍上銅金屬，以形成導電銅端電極；(e) exposing the conductor region at both ends of the alloy wafer resistor, plating copper metal by electroplating to form a conductive copper terminal electrode;
（ｆ）以模具將原合金晶片電阻器矩陣或合金晶片電阻器條進行沖壓或切割形成合金晶片電阻器個體；(f) stamping or cutting the original alloy wafer resistor matrix or the alloy wafer resistor strip by a mold to form an alloy wafer resistor individual;
（ｇ）於合金晶片電阻器個體的導電銅端極，鍍上導電金屬以形成合金晶片電阻器之電極，藉此完成合金晶片電阻器的成品製作流程。(g) The conductive copper terminal of the individual of the alloy wafer resistor is plated with a conductive metal to form an electrode of the alloy wafer resistor, thereby completing the finished product fabrication process of the alloy wafer resistor.
如上所述之合金電阻製造方法的較佳實施例中，該合金板係選自鎳鉻合金、鎳鉻鋁合金、銅鎳合金、鐵鉻鋁合金或錳銅合金其中之一。In a preferred embodiment of the method of manufacturing an alloy resistor as described above, the alloy sheet is selected from one of a nickel-chromium alloy, a nickel-chromium-aluminum alloy, a copper-nickel alloy, an iron-chromium-aluminum alloy, or a manganese-copper alloy.
如上所述之合金電阻製造方法的較佳實施例中，該導電金屬選自銅、鎳、錫、銀其中之一或二者以上並採層疊設置。In a preferred embodiment of the method of manufacturing an alloy resistor as described above, the conductive metal is selected from one or more of copper, nickel, tin, and silver and is laminated.
如上所述之合金電阻製造方法的較佳實施例中，在步驟（ｂ）之前，於待切合金板上至少取樣一樣品，並先量測該樣品之電阻值，依該樣品量測值以程式控制調整雷射切割形狀或切割線條的長短。In a preferred embodiment of the alloy resistance manufacturing method as described above, before step (b), at least one sample is sampled on the alloy plate to be cut, and the resistance value of the sample is first measured, according to the sample measurement value. Program control adjusts the length of the laser cut shape or cut line.
（１）‧‧‧合金板(1)‧‧‧ alloy plate
（２）‧‧‧合金晶片電阻器個體半成品(2) ‧‧‧ alloy wafer resistors individual semi-finished products
（２１）‧‧‧電阻本體區域(21)‧‧‧Resistive body area
（２２）‧‧‧外露導體區域(22) ‧‧‧Exposed conductor area
（２３）‧‧‧連結區域(23)‧‧‧ Linked area
（Ｌ）‧‧‧阻值路徑(L)‧‧‧ resistance path
（Ａ）‧‧‧合金晶片電阻器半成品矩陣或合金晶片電阻器半成品條(A)‧‧‧ alloy wafer resistor semi-finished matrix or alloy wafer resistor semi-finished strip
（Ｂ）‧‧‧合金晶片電阻器(B)‧‧‧ alloy wafer resistors
第一圖：本發明其一較佳實施例之合金晶片電阻器製造方法的步驟流程圖First FIG.: Flow chart of steps of a method for manufacturing an alloy wafer resistor according to a preferred embodiment of the present invention
第二圖：本發明其一較佳實施例於實施步驟（ｂ）後之示意圖Second Figure: Schematic diagram of a preferred embodiment of the present invention after performing step (b)
第三圖：本發明其一較佳實施例於實施步驟（ｆ）後之示意圖Third Figure: Schematic diagram of a preferred embodiment of the present invention after performing step (f)
第四圖：本發明其二較佳實施例之合金晶片電阻器製造方法的步驟流程圖Fourth: Flow chart of steps of a method for manufacturing an alloy wafer resistor according to a second preferred embodiment of the present invention
第五圖：本發明其二較佳實施例於實施步驟（ｂ）後之示意圖Figure 5 is a schematic view of the second preferred embodiment of the present invention after the implementation of step (b)
第六圖：本發明其二較佳實施例於實施步驟（ｃ）後之示意圖Figure 6 is a schematic view of the second preferred embodiment of the present invention after performing step (c)
第七圖：本發明其二較佳實施例於實施步驟（ｇ）後之示意圖Figure 7 is a schematic view of the second preferred embodiment of the present invention after performing step (g)
為令本發明所運用之技術內容、發明目的及其達成之功效有更完整且清楚的揭露，茲於下詳細說明之，並請一併參閱所揭之圖式及圖號：For a more complete and clear disclosure of the technical content, the purpose of the invention and the effects thereof achieved by the present invention, it is explained in detail below, and please refer to the drawings and drawings:
請參看第一圖所示，其係本發明之其一較佳實施例的步驟流程圖。Please refer to the first figure, which is a flow chart of steps of a preferred embodiment of the present invention.
本發明其一較佳實施例之合金電阻製造方法，係包括以下步驟：The method for manufacturing an alloy resistance according to a preferred embodiment of the present invention comprises the following steps:
（ａ）依據所需之特性，選用一選自鎳鉻合金、鎳鉻鋁合金、銅鎳合金、鐵鉻鋁合金或錳銅合金其中之一的合金板（１）；(a) according to the desired characteristics, an alloy plate (1) selected from one of a nickel-chromium alloy, a nickel-chromium-aluminum alloy, a copper-nickel alloy, an iron-chromium-aluminum alloy or a manganese-copper alloy;
（ｂ）依需求阻值預先設計一符合該需求阻值之阻值路徑的切割圖形，再以雷射切割製程於該合金板上依據該切割圖形切割出複數個合金晶片電阻器個體半成品（２）［請一併參看第二圖］，令該合金晶片電阻器個體半成品（２）的中段為電阻本體區域（２１），該合金晶片電阻器個體半成品（２）的兩端為外露導體區域（２２）及連結相鄰之該合金晶片電阻器個體半成品（２）的連結區域（２３），以在合金板（１）上形成連續之合金晶片電阻器半成品矩陣或合金晶片電阻器半成品條（Ａ）；(b) pre-designing a cutting pattern conforming to the resistance value of the required resistance value according to the required resistance value, and then cutting a plurality of individual semi-finished products of the alloy chip resistor according to the cutting pattern by using a laser cutting process (2) [Please refer to the second figure together], so that the middle section of the individual semi-finished product (2) of the alloy wafer resistor is the resistive body region (21), and the ends of the individual semi-finished products (2) of the alloy wafer resistor are exposed conductor regions ( 22) and joining adjacent joint regions (23) of the individual semi-finished products (2) of the alloy wafer resistors to form a continuous alloy wafer resistor semi-finished matrix or alloy wafer resistor semi-finished strip on the alloy sheet (1) (A) );
（ｃ）於該合金晶片電阻器個體半成品（２）的電阻本體區域（２１）處以射出成型、塗裝或曝光顯影…等方式形成一包覆之絕緣體；(c) forming a coated insulator at a resistive body region (21) of the individual semi-finished product (2) of the alloy wafer resistor by injection molding, painting or exposure development;
（ｄ）在合金晶片電阻器個體半成品（２）兩端外露導體區域（２２），以電鍍方式鍍上銅金屬，以形成合金晶片電阻器（Ｂ）之導電銅端電極；(d) exposing the conductor region (22) at both ends of the individual semi-finished product (2) of the alloy wafer resistor, electroplating copper metal to form a conductive copper terminal electrode of the alloy wafer resistor (B);
（ｅ）以模具將原合金晶片電阻器矩陣或合金晶片電阻器條進行沖壓或切割，以形成複數個合金晶片電阻器個體；(e) stamping or cutting the original alloy wafer resistor matrix or the alloy wafer resistor strip with a mold to form a plurality of individual alloy wafer resistor individual;
（ｆ）在合金晶片電阻器個體兩端之導電銅端電極，以電鍍方式鍍上如鎳、錫或銀…等導電金屬，以形成複數個合金晶片電阻器（Ｂ）成品［請一併參看第三圖］。(f) Conductive copper terminal electrodes at both ends of the alloy chip resistor are electroplated with a conductive metal such as nickel, tin or silver to form a plurality of alloy wafer resistors (B). [Please refer to The third picture].
除此之外，可在步驟（ｂ）大量切割前，於待切合金板上至少取樣一樣品，並先量測該樣品之電阻值，依該樣品量測值以程式控制調整雷射切割形狀或切割線條的長短，使成品的阻值更接近預設值。In addition, at least one sample may be sampled on the alloy plate to be cut before the step (b) is cut in a large amount, and the resistance value of the sample is first measured, and the laser cutting shape is adjusted by the sample measurement according to the sample measurement value. Or the length of the cutting line, so that the resistance of the finished product is closer to the preset value.
請參看第二圖所示，其係本發明之其二較佳實施例的步驟流程圖。Please refer to the second figure, which is a flow chart of the steps of the second preferred embodiment of the present invention.
本發明其二較佳實施例之合金電阻製造方法，係包括以下步驟：The alloy resistance manufacturing method of the second preferred embodiment of the present invention comprises the following steps:
（ａ）依據所需之特性，選用一選自鎳鉻合金、鎳鉻鋁合金、銅鎳合金、鐵鉻鋁合金或錳銅合金其中之一的合金板（１）之材料；(a) selecting a material of the alloy sheet (1) selected from one of a nickel-chromium alloy, a nickel-chromium-aluminum alloy, a copper-nickel alloy, an iron-chromium-aluminum alloy or a manganese-copper alloy, depending on the desired characteristics;
（ｂ）依需求阻值預先設計一符合該需求阻值之阻值路徑的切割圖型，先以模具沖壓出電阻產品之外型［請一併參看第五圖］，以於該合金板（１）上得到複數個合金晶片電阻器個體半成品（２），令該合金晶片電阻器個體半成品（２）的中段為電阻本體區域（２１），該合金晶片電阻器個體半成品（２）的兩端為外露導體區域（２２）及連結相鄰之該合金晶片電阻器個體半成品（２）的連結區域（２３），以在合金板（１）上形成連續之合金晶片電阻器半成品矩陣或合金晶片電阻器半成品條（Ａ）；(b) pre-design a cutting pattern that conforms to the resistance value of the required resistance value according to the required resistance value, first stamping out the resistance product shape with the mold [please refer to the fifth figure together) for the alloy plate ( 1) obtaining a plurality of individual semi-finished products of the alloy chip resistors (2), so that the middle section of the individual semi-finished products (2) of the alloy chip resistors is a resistive body region (21), and the two ends of the individual semi-finished products (2) of the alloy chip resistors The exposed conductor region (22) and the joining region (23) of the adjacent semi-finished product (2) of the alloy chip resistor are connected to form a continuous alloy chip resistor semi-finished matrix or alloy chip resistor on the alloy plate (1) Semi-finished product strip (A);
（ｃ）於該合金晶片電阻器個體半成品（２）中段的電阻本體區域（２１）上，依據該切割圖形以雷射切割製程切割至少一符合該需求阻值之阻值路徑（Ｌ）［請一併參看第六圖］；(c) on the resistive body region (21) of the middle portion of the individual semi-finished product (2) of the alloy wafer resistor, according to the cutting pattern, cutting at least one resistance path (L) that meets the required resistance value by a laser cutting process [Please See also the sixth picture];
（ｄ）於該合金晶片電阻器個體半成品（２）的電阻本體區域（２１）處以射出成型、塗裝或曝光顯影…等方式形成一包覆之絕緣體；(d) forming a coated insulator in the resistive body region (21) of the individual semi-finished product (2) of the alloy wafer resistor by injection molding, painting or exposure development;
（ｅ）在合金晶片電阻器個體半成品（２）兩端外露導體區域（２２），以電鍍方式鍍上銅金屬，以形成合金晶片電阻器（Ｂ）之導電銅端電極；(e) exposing the conductor region (22) at both ends of the individual semi-finished product (2) of the alloy wafer resistor, electroplating copper metal to form a conductive copper terminal electrode of the alloy wafer resistor (B);
（ｆ）以模具將原合金晶片電阻器半成品矩陣或合金晶片電阻器半成品條（Ａ）進行沖壓或切割，以形成複數個合金晶片電阻器（Ｂ）個體；(f) stamping or cutting the original alloy wafer resistor semi-finished matrix or the alloy wafer resistor semi-finished strip (A) with a mold to form a plurality of alloy wafer resistors (B);
（ｇ）在合金晶片電阻器個體兩端之導電銅端電極，以電鍍方式鍍上如鎳、錫或銀…等導電金屬，以形成複數個合金晶片電阻器（Ｂ）成品［請一併參看第七圖］。(g) Conductive copper terminal electrodes at both ends of the alloy wafer resistor are plated with a conductive metal such as nickel, tin or silver to form a plurality of alloy wafer resistors (B). [Please refer to Figure 7].
另可在步驟（ｂ）大量切割前，於待切合金板上至少取樣一樣品，並先量測該樣品之電阻值，依該樣品量測值以程式控制調整雷射切割形狀或切割線條的長短。In addition, before step (b) a large number of cutting, at least one sample is sampled on the alloy plate to be cut, and the resistance value of the sample is first measured, and the laser cutting shape or the cutting line is adjusted according to the sample measurement value. length.
以上所舉者僅係本發明之部份實施例，並非用以限制本發明，致依本發明之創意精神及特徵，稍加變化修飾而成者，亦應包括在本專利範圍之內。The above is only a part of the embodiments of the present invention, and is not intended to limit the present invention. It is intended to be included in the scope of the present invention.
綜上所述，本發明實施例確能達到所預期之使用功效，又其所揭露之具體技術手段，不僅未曾見諸於同類產品中，亦未曾公開於申請前，誠已完全符合專利法之規定與要求，爰依法提出發明專利之申請，懇請惠予審查，並賜准專利，則實感德便。In summary, the embodiments of the present invention can achieve the expected use efficiency, and the specific technical means disclosed therein have not been seen in similar products, nor have they been disclosed before the application, and have completely complied with the patent law. The regulations and requirements, the application for invention patents in accordance with the law, and the application for review, and the grant of patents, are truly sensible.
Claims (10)
（ａ）依據所需之特性，選用一合金板之材料；
（ｂ）依需求阻值預先設計一符合該需求阻值之阻值路徑的切割圖型，以雷射切割製程於該合金板上切割出複數個合金電阻個體半成品，令該合金電阻個體半成品的中段為電阻本體區域，該合金電阻個體半成品的兩端為外露導體區域及連結相鄰之該合金電阻個體半成品的連結區域，以在合金板上形成連續之合金電阻半成品矩陣或合金電阻半成品條；
（ｃ）於該合金電阻個體半成品的本體區域射出成型、塗裝或曝光顯影其中之一的方式形成一包覆有絕緣體；
（ｄ）在合金電阻半成品兩端外露導體區域，以電鍍方式鍍上銅金屬，以形成合金電阻之導電銅端電極；
（ｅ）以模具將原合金電阻半成品矩陣或合金電阻半成品條進行沖壓或切割，以形成複數個合金電阻半成品個體；
（ｆ）在合金電阻半成品個體兩端導電銅端極處，以電鍍方式鍍上導電金屬，以形成合金電阻成品之電極。A method for manufacturing an alloy wafer resistor includes the following steps:
(a) selecting an alloy sheet material depending on the desired characteristics;
(b) pre-designing a cutting pattern conforming to the resistance value of the resistance value according to the required resistance value, and cutting a plurality of individual semi-finished alloy resistors on the alloy plate by a laser cutting process, so that the alloy resistor is semi-finished The middle part is a resistive body region, and the two ends of the alloy resistance semi-finished product are an exposed conductor region and a joint region connecting the adjacent semi-finished products of the alloy resistor to form a continuous alloy resistance semi-finished matrix or alloy resistance semi-finished strip on the alloy plate;
(c) forming an overcoated insulator in a manner of injection molding, painting or exposing one of the body regions of the individual resistors of the alloy resistor;
(d) an exposed conductor region at both ends of the alloy resistor semi-finished product, plated with copper metal to form an alloy resistance conductive copper end electrode;
(e) stamping or cutting the original alloy resistance semi-finished product matrix or the alloy resistance semi-finished product strip by a mold to form a plurality of alloy resistance semi-finished products;
(f) Electroplated metal is plated on the conductive copper end of the alloy resistance semi-finished product to form an electrode of the alloy resistance finished product.
（ａ）依據所需之特性，選用一合金板之材料；
（ｂ）依需求阻值預先設計一符合該需求阻值之阻值路徑的切割圖型，先以模具沖壓出合金晶片電阻器之外型，以於該合金板上得到複數個合金晶片電阻器個體半成品，令該合金晶片電阻器個體半成品的中段為電阻本體區域，該合金晶片電阻器個體半成品的兩端為外露導體區域及連結相鄰之該合金晶片電阻器個體半成品的連結區域，以在合金板上形成連續之合金晶片電阻器半成品矩陣或合金晶片電阻器半成品條；
（ｃ）於該合金晶片電阻器個體半成品的中段電阻本體區域，再以雷射切割製程切割符合該需求阻值之阻值路徑；
（ｄ）於該合金晶片電阻器個體半成品的本體區域以射出成型、塗裝或曝光顯影方式包覆有絕緣體；
（ｅ）在合金晶片電阻器個體半成品兩端外露導體區域，以電鍍方式鍍上銅金屬，以形成合金電阻半成品之導電銅端電極；
（ｆ）以模具將原合金晶片電阻器矩陣或合金晶片電阻器條進行沖壓或切割，以形成複數個合金晶片電阻器半成品個體；
（ｇ）在合金電阻半成品個體兩端導電銅端電極處，以電鍍方式鍍上導電金屬，以形成合金電阻成品之電極。A method for manufacturing an alloy wafer resistor includes the following steps:
(a) selecting an alloy sheet material depending on the desired characteristics;
(b) pre-designing a cutting pattern conforming to the resistance value of the required resistance value according to the required resistance value, first stamping out the outer shape of the alloy wafer resistor with the mold, so as to obtain a plurality of alloy wafer resistors on the alloy plate The individual semi-finished product, the middle section of the individual semi-finished product of the alloy chip resistor is a resistive body region, and the two ends of the individual semi-finished product of the alloy chip resistor are an exposed conductor region and a joint region connecting the adjacent semi-finished products of the alloy chip resistor to Forming a continuous alloy wafer resistor semi-finished matrix or alloy wafer resistor semi-finished strip on the alloy plate;
(c) cutting the resistance region of the intermediate resistor body of the individual semi-finished product of the alloy wafer resistor, and cutting the resistance value according to the required resistance value by a laser cutting process;
(d) covering the body region of the individual semi-finished product of the alloy wafer resistor with an insulator by injection molding, painting or exposure development;
(e) exposing the conductor region at both ends of the individual semi-finished product of the alloy wafer resistor, plating copper metal by electroplating to form a conductive copper terminal electrode of the alloy resistance semi-finished product;
(f) stamping or cutting the original alloy wafer resistor matrix or the alloy wafer resistor strip with a mold to form a plurality of alloy wafer resistor semi-finished individuals;
(g) Electroplated metal is plated at the conductive copper terminal electrode at both ends of the alloy resistance semi-finished product to form an electrode of the alloy resistance finished product.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109166680A (en) * | 2018-09-29 | 2019-01-08 | 李俊 | Production and processing system for resistance alloys |
| CN109326400A (en) * | 2018-11-29 | 2019-02-12 | 昆山厚声电子工业有限公司 | A kind of current sensing resistor and its manufacturing process |
| CN112935570A (en) * | 2021-03-22 | 2021-06-11 | 丽智电子（南通）有限公司 | Method for manufacturing alloy resistor based on laser |
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| US8242878B2 (en) * | 2008-09-05 | 2012-08-14 | Vishay Dale Electronics, Inc. | Resistor and method for making same |
| TWI473121B (en) * | 2010-07-02 | 2015-02-11 | Viking Tech Corp | The method of alloy resistor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109166680A (en) * | 2018-09-29 | 2019-01-08 | 李俊 | Production and processing system for resistance alloys |
| CN109166680B (en) * | 2018-09-29 | 2024-01-30 | 江苏聚永昶电子科技有限公司 | Production and processing system for alloy resistor |
| CN109326400A (en) * | 2018-11-29 | 2019-02-12 | 昆山厚声电子工业有限公司 | A kind of current sensing resistor and its manufacturing process |
| CN112935570A (en) * | 2021-03-22 | 2021-06-11 | 丽智电子（南通）有限公司 | Method for manufacturing alloy resistor based on laser |
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