TW201506068A - Hollow electronic device sealing sheet and production method for hollow electronic device package - Google Patents

Hollow electronic device sealing sheet and production method for hollow electronic device package Download PDF

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TW201506068A
TW201506068A TW103111490A TW103111490A TW201506068A TW 201506068 A TW201506068 A TW 201506068A TW 103111490 A TW103111490 A TW 103111490A TW 103111490 A TW103111490 A TW 103111490A TW 201506068 A TW201506068 A TW 201506068A
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electronic device
sealing
sheet
hollow
ion
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TW103111490A
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TWI664211B (en
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Eiji Toyoda
yusaku Shimizu
Hajime Sunahara
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Nitto Denko Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/10—Materials in mouldable or extrudable form for sealing or packing joints or covers
    • C09K3/1006—Materials in mouldable or extrudable form for sealing or packing joints or covers characterised by the chemical nature of one of its constituents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)

Abstract

A hollow electronic device sealing sheet in which the hollow electronic device sealing sheet is immersed in 50 ml of deionized water, and in which at least one from among the chloride ion concentration, sodium ion concentration, phosphate ion concentration, and sulfate ion concentration in the deionized water after allowing to stand for 20 hours at 121 DEG C and 2 atm is less than a given value.

Description

中空型電子裝置密封用薄片及中空型電子裝置封裝之製造方法 Hollow type electronic device sealing sheet and hollow type electronic device package manufacturing method

本發明係關於中空型電子裝置密封用薄片及中空型電子裝置封裝之製造方法。 The present invention relates to a method for manufacturing a hollow electronic device sealing sheet and a hollow type electronic device package.

以往，在將電子裝置與基板之間成為中空結構的中空型電子裝置進行樹脂密封而製作中空型電子裝置封裝時，有時使用薄片狀者作為密封樹脂(例如，參照專利文獻1)。 When a hollow type electronic device having a hollow structure between the electronic device and the substrate is resin-sealed and a hollow type electronic device package is produced, a sheet-like one may be used as the sealing resin (see, for example, Patent Document 1).

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特開2006-19714號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2006-19714

於中空型電子裝置封裝中，會有因來自密封所使用之薄片狀的密封樹脂之各種離子性雜質而使中空型電子裝 置受到影響的情況。尤其，於中空型電子裝置封裝中，若離子性雜質從薄片狀的密封樹脂滲出則容易積存於中空空間，恐有受其之影響而使作為中空型電子裝置的特性(例如，作為壓力感測器、振動感測器等使用時之感測特性、作為SAW過濾器等使用時之過濾特性等)無法充分發揮之虞。因此，期望有離子性雜質之含量少的密封樹脂。 In the hollow type electronic device package, there is a hollow type electronic device due to various ionic impurities from the sheet-like sealing resin used for sealing. Set the affected situation. In particular, in the hollow type electronic device package, if the ionic impurities ooze out from the sheet-like sealing resin, they are likely to be accumulated in the hollow space, and the characteristics of the hollow type electronic device may be affected by the influence (for example, as pressure sensing). The sensing characteristics when using the device, the vibration sensor, and the like, and the filter characteristics when used as a SAW filter or the like cannot be fully exerted. Therefore, a sealing resin having a small content of ionic impurities is desired.

本發明係鑑於上述課題而完成者，其目的為提供一種離子性雜質之滲出量少的中空型電子裝置密封用薄片、及離子性雜質之滲出量少的中空型電子裝置封裝之製造方法。 The present invention has been made in view of the above-described problems, and an object of the invention is to provide a hollow electronic device sealing sheet having a small amount of ionic impurities and a method for producing a hollow electronic device package having a small amount of ionic impurities.

本發明者們發現藉由採用下述的構成，可解決前述課題，因而完成本發明。 The present inventors have found that the above problems can be solved by adopting the following configuration, and thus the present invention has been completed.

亦即，本發明係一種中空型電子裝置密封用薄片，其特徵為滿足下述(a)~下述(d)中至少1個。 In other words, the present invention relates to a sheet for sealing a hollow electronic device, which is characterized in that at least one of the following (a) to (d) below is satisfied.

(a)將重量5g之中空型電子裝置密封用薄片浸漬於離子交換水50ml中，在121℃、2氣壓下放置20小時之後的前述離子交換水中之氯化物離子濃度，以質量基準計為低於30ppm、(b)將重量5g之中空型電子裝置密封用薄片浸漬於離子交換水50ml中，在121℃、2氣壓下放置20小時之後的前述離子交換水中之鈉離子濃度，以質量基準計為低於10ppm、 (c)將重量5g之中空型電子裝置密封用薄片浸漬於離子交換水50ml中，在121℃、2氣壓下放置20小時之後的前述離子交換水中之磷酸離子濃度，以質量基準計為低於30ppm、(d)將重量5g之中空型電子裝置密封用薄片浸漬於離子交換水50ml中，在121℃、2氣壓下放置20小時之後的前述離子交換水中之硫酸離子濃度，以質量基準計為低於5ppm。 (a) The chloride ion concentration in the ion-exchanged water after immersing the hollow-type electronic device sealing sheet having a weight of 5 g in 50 ml of ion-exchanged water at 121 ° C and 2 atmospheres for 20 hours is low on a mass basis. (b) a sodium ion concentration in the ion-exchanged water after immersing 5 g of the hollow electronic device sealing sheet in 50 ml of ion-exchanged water at 30 ° C for 2 hours at 121 ° C and 2 atmospheres, on a mass basis Less than 10ppm, (c) immersing 5 g of the hollow electronic device sealing sheet in 50 ml of ion-exchanged water, and the phosphate ion concentration in the ion-exchanged water after being left at 121 ° C and 2 atmospheres for 20 hours is lower than the mass basis. 30 ppm, (d) immersed 5 g of the hollow electronic device sealing sheet in 50 ml of ion-exchanged water, and the sulfate ion concentration in the ion-exchanged water after being left at 121 ° C and 2 atmospheres for 20 hours, on a mass basis Less than 5ppm.

依據本發明之中空型電子裝置密封用薄片，則滿足上述(a)~上述(d)中至少1個。因而，離子性雜質(氯化物離子、鈉離子、磷酸離子(PO4 3-)、及硫酸離子(SO4 2-)中至少1個)之滲出量減少。其結果，使用該中空型電子裝置密封用薄片所製造的中空型電子裝置封裝，係可抑制特性降低，而可提昇製品信賴性。 According to the hollow electronic device sealing sheet of the present invention, at least one of the above (a) to (d) is satisfied. Therefore, the amount of leaching of ionic impurities (at least one of chloride ions, sodium ions, phosphate ions (PO 4 3- ), and sulfate ions (SO 4 2- )) is reduced. As a result, the hollow type electronic device package manufactured by using the hollow type electronic device sealing sheet can suppress the deterioration of characteristics and can improve the reliability of the product.

於前述構成中，在厚度250μm時之熱硬化後的透濕度為溫度85℃、濕度85%、168小時之條件下，較佳為500g/m2．24小時以下。 In the above configuration, the moisture permeability after thermal curing at a thickness of 250 μm is preferably 500 g/m 2 under the conditions of a temperature of 85 ° C, a humidity of 85%, and 168 hours. Below 24 hours.

本發明者們，探究出即使在浸漬於離子交換水時之離子性雜質的滲出量少，若透過中空型電子裝置密封用薄片而到達中空部分的水分多，仍恐有離子性雜質融入此水分中等而流入電子裝置側，使離子性雜質蓄積於電子裝置上之虞。因此，若前述中空型電子裝置密封用薄片在厚度成為250μm時之熱硬化後的透濕度，於溫度85℃、濕度85%、168小時之條件下，為500g/m2．24小時以下，則水分難以從 外部侵入到中空部分。其結果，可抑制離子性雜質融入來自外部的水分而到達電子裝置上。 The present inventors have found that even when immersed in ion-exchanged water, the amount of leaching of ionic impurities is small, and when the hollow electronic device sealing sheet passes through the hollow electronic device, the amount of moisture reaching the hollow portion is increased, and ionic impurities are likely to be incorporated into the water. Medium and flowing into the electronic device side, so that ionic impurities accumulate on the electronic device. Therefore, the moisture permeability of the hollow electronic device sealing sheet after heat curing at a thickness of 250 μm is 500 g/m 2 under the conditions of a temperature of 85 ° C, a humidity of 85%, and a 168 hour. Below 24 hours, it is difficult for moisture to intrude into the hollow portion from the outside. As a result, it is possible to suppress the ionic impurities from entering the external moisture and reaching the electronic device.

如此一來，除使中空型電子裝置密封用薄片之離子性雜質的滲出量減少以外，亦可藉由降低透濕度，而更提昇使用該中空電子裝置密封用薄片所製造的中空型電子裝置封裝之製品信賴性。另外，將透濕度的評估條件設為溫度85℃、濕度85%、168小時的原因在於，符合在半導體封裝之耐焊錫信賴性試驗(MSL試驗)中最為嚴苛的吸濕條件之Level 1條件。 In this way, in addition to reducing the amount of bleed out of the ionic impurities in the sheet for sealing the hollow electronic device, the hollow type electronic device package manufactured by using the sheet for sealing the hollow electronic device can be further improved by reducing the moisture permeability. Product reliability. In addition, the evaluation condition of the moisture permeability was set to a temperature of 85 ° C, a humidity of 85%, and 168 hours because the level 1 condition of the most severe moisture absorption condition in the solder resistance reliability test (MSL test) of the semiconductor package was met. .

另外，於厚度非250μm時，係藉由下述式1換算，而作為在溫度85℃、濕度85%、168小時的條件下之厚度成為250μm時的透濕度。 In addition, when the thickness is not 250 μm, it is converted into the moisture permeability when the thickness is 250 μm under the conditions of a temperature of 85 ° C, a humidity of 85%, and a 168 hour.

(式1)A-(250-D)×0.101 (Formula 1) A-(250-D)×0.101

(A：透濕度、D：樣品厚度(μm)) (A: moisture permeability, D: sample thickness (μm))

於前述構成中，相對於中空型電子裝置密封用薄片全體，較佳為包含70~90體積%之無機質填充劑。若無機質填充劑之含量相對於中空型電子裝置密封用薄片全體為70體積%以上，則可容易降低透濕度。另一方面，若無機質填充劑之含量相對於中空型電子裝置密封用薄片全體為90體積%以下，則柔軟性、流動性、接著性更良好。 In the above configuration, it is preferable to contain 70 to 90% by volume of the inorganic filler for the entire sheet for sealing the hollow electronic device. When the content of the inorganic filler is 70% by volume or more based on the entire sheet for sealing the hollow electronic device, the moisture permeability can be easily lowered. On the other hand, when the content of the inorganic filler is 90% by volume or less based on the entire sheet for sealing the hollow electronic device, the flexibility, fluidity, and adhesion are further improved.

於前述構成中，較佳為含有離子捕捉劑。若含有離子捕捉劑，則可更加抑制離子性雜質到達電子裝置。 In the above configuration, it is preferred to contain an ion trapping agent. If an ion trapping agent is contained, it is possible to further suppress the ionic impurities from reaching the electronic device.

於前述構成中，前述離子捕捉劑，較佳為水滑石 系化合物。水滑石系化合物，係不含有銻等之重金屬而具有離子捕捉性。 In the above configuration, the ion trapping agent is preferably hydrotalcite. a compound. The hydrotalcite-based compound has an ion trapping property without containing a heavy metal such as ruthenium.

此外，本發明之中空型電子裝置封裝之製造方法，其特徵為包含：以被覆搭載於基板上之1或複數個中空型電子裝置的方式，將前述記載之中空型電子裝置密封用樹脂薄片層合於前述中空型電子裝置上之層合步驟，以及使前述中空型電子裝置密封用樹脂薄片硬化而形成密封體之密封體形成步驟。 Further, the method of manufacturing a hollow type electronic device package according to the present invention is characterized in that the resin sheet layer for sealing a hollow type electronic device described above is applied to cover one or a plurality of hollow type electronic devices mounted on a substrate. The laminating step of the hollow type electronic device and the sealing body forming step of curing the resin sheet for sealing the hollow type electronic device to form a sealed body.

使用前述記載之中空型電子裝置密封用樹脂薄片所製造的中空型電子裝置封裝，係離子性雜質之滲出量少。因而，使用該中空型電子裝置密封用樹脂薄片所製造的中空型電子裝置封裝，係可抑制特性降低，而可提昇製品信賴性。 The hollow type electronic device package manufactured by using the resin sheet for sealing a hollow type electronic device described above has a small amount of bleed out of ionic impurities. Therefore, the hollow type electronic device package manufactured by using the resin sheet for sealing a hollow electronic device can suppress the deterioration of characteristics and can improve the reliability of the product.

依據本發明，可提供一種離子性雜質之滲出量少的中空型電子裝置密封用薄片、及離子性雜質之滲出量少的中空型電子裝置封裝之製造方法。 According to the present invention, it is possible to provide a hollow electronic device sealing sheet having a small amount of leaching of ionic impurities and a method of manufacturing a hollow electronic device package having a small amount of ionic impurities.

11‧‧‧中空型電子裝置密封用薄片(密封薄片) 11‧‧‧Hard type electronic device sealing sheet (sealing sheet)

11a‧‧‧支撐體 11a‧‧‧Support

13‧‧‧SAW過濾器 13‧‧‧SAW filter

15‧‧‧密封體 15‧‧‧ Sealing body

18‧‧‧中空型電子裝置封裝 18‧‧‧Hard type electronic device package

[第1圖]係模式性顯示本發明之一實施形態之中空型電子裝置密封用薄片的剖面圖。 [Fig. 1] A cross-sectional view showing a sheet for sealing a hollow electronic device according to an embodiment of the present invention.

[第2圖A]係模式性顯示本發明之一實施形態之中空型電子裝置封裝的製造方法之一步驟的圖。 [Fig. 2] A diagram schematically showing one step of a method of manufacturing a hollow type electronic device package according to an embodiment of the present invention.

[第2圖B]係模式性顯示本發明之一實施形態之中空型電子裝置封裝的製造方法之一步驟的圖。 [Fig. 2B] Fig. 1 is a view schematically showing one step of a method of manufacturing a hollow type electronic device package according to an embodiment of the present invention.

[第2圖C]係模式性顯示本發明之一實施形態之中空型電子裝置封裝的製造方法之一步驟的圖。 [Fig. 2C] is a view schematically showing one step of a method of manufacturing a hollow type electronic device package according to an embodiment of the present invention.

以下，針對本發明之實施形態，一邊參照圖面一邊進行說明。但，本發明並不僅限定於此等實施形態。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention is not limited to these embodiments.

[中空型電子裝置密封用薄片] [Hollow type electronic device sealing sheet]

第1圖係模式性顯示本發明之一實施形態之中空型電子裝置密封用薄片的剖面圖。中空型電子裝置密封用薄片11(以下，亦稱為「密封用薄片11」)，係代表性地以層合於聚對苯二甲酸乙二酯(PET)薄膜等之支撐體11a上的狀態提供。另外，於支撐體11a，係可為了容易進行密封用薄片11之剝離，而實施脫模處理。 Fig. 1 is a cross-sectional view schematically showing a sheet for sealing a hollow electronic device according to an embodiment of the present invention. The hollow electronic device sealing sheet 11 (hereinafter also referred to as "sealing sheet 11") is typically laminated on a support 11a such as a polyethylene terephthalate (PET) film. provide. Further, in the support body 11a, a mold release treatment can be performed in order to facilitate the peeling of the sheet 11 for sealing.

密封用薄片11，係滿足下述(a)~下述(d)中至少1個。 The sheet 11 for sealing satisfies at least one of the following (a) to (d) below.

(a)將重量5g之中空型電子裝置密封用薄片浸漬於離子交換水50ml中，在121℃、2氣壓下放置20小時之後的前述離子交換水中之氯化物離子濃度，以質量基準計為低於30ppm、(b)將重量5g之中空型電子裝置密封用薄片浸漬於離子交換水50ml中，在121℃、2氣壓下放置20小時之後的前 述離子交換水中之鈉離子濃度，以質量基準計為低於10ppm、(c)將重量5g之中空型電子裝置密封用薄片浸漬於離子交換水50ml中，在121℃、2氣壓下放置20小時之後的前述離子交換水中之磷酸離子濃度，以質量基準計為低於30ppm、(d)將重量5g之中空型電子裝置密封用薄片浸漬於離子交換水50ml中，在121℃、2氣壓下放置20小時之後的前述離子交換水中之硫酸離子濃度，以質量基準計為低於5ppm。 (a) The chloride ion concentration in the ion-exchanged water after immersing the hollow-type electronic device sealing sheet having a weight of 5 g in 50 ml of ion-exchanged water at 121 ° C and 2 atmospheres for 20 hours is low on a mass basis. (b) 30 g of a hollow electronic device sealing sheet having a weight of 5 g was immersed in 50 ml of ion-exchanged water, and allowed to stand at 121 ° C and 2 atmospheres for 20 hours. The sodium ion concentration in the ion-exchanged water is less than 10 ppm on a mass basis, and (c) the hollow-type electronic device sealing sheet having a weight of 5 g is immersed in 50 ml of ion-exchanged water, and left at 121 ° C, 2 atmospheres for 20 hours. The concentration of the phosphate ion in the ion-exchanged water is less than 30 ppm on a mass basis, and (d) immersing 5 g of the hollow electronic device sealing sheet in 50 ml of ion-exchanged water, and placing it at 121 ° C and 2 atm. The sulfate ion concentration in the aforementioned ion-exchanged water after 20 hours was less than 5 ppm on a mass basis.

密封用薄片11，係由於滿足上述(a)~上述(d)中至少1個，因此離子性雜質(氯化物離子、鈉離子、磷酸離子、及硫酸離子中至少1個)之滲出量減少。其結果，使用該中空型電子裝置密封用薄片11所製造的中空型電子裝置封裝，係可抑制特性降低，而可提昇製品信賴性。用以滿足上述(a)~上述(d)中至少1個的方法，可例舉例如：於製造密封用薄片11時，選擇離子性雜質之含量少的材料，或含有能夠捕捉上述離子性雜質的離子捕捉劑之方法。 Since the sealing sheet 11 satisfies at least one of the above (a) to (d), the amount of leaching of ionic impurities (at least one of chloride ions, sodium ions, phosphate ions, and sulfate ions) is reduced. As a result, the hollow type electronic device package manufactured by using the hollow type electronic device sealing sheet 11 can suppress the deterioration of characteristics and can improve the reliability of the product. In order to satisfy at least one of the above-mentioned (a) to (d), for example, when the sealing sheet 11 is produced, a material having a small content of ionic impurities or containing an ionic impurity can be selected. Method of ion trapping agent.

前述氯化物離子濃度較佳為低於20ppm。此外，前述氯化物離子濃度雖越小越好，但例如為1ppm以上。 The aforementioned chloride ion concentration is preferably less than 20 ppm. Further, the chloride ion concentration is preferably as small as possible, but is, for example, 1 ppm or more.

前述鈉離子濃度較佳為低於7ppm。此外，前述鈉離子濃度雖越小越好，但例如為0.1ppm以上。 The aforementioned sodium ion concentration is preferably less than 7 ppm. Further, the sodium ion concentration is preferably as small as possible, but is, for example, 0.1 ppm or more.

前述磷酸離子濃度較佳為低於20ppm。此外，前述磷酸離子濃度雖越小越好，但例如為1ppm以上。 The aforementioned phosphate ion concentration is preferably less than 20 ppm. Further, the phosphoric acid ion concentration is preferably as small as possible, but is, for example, 1 ppm or more.

前述硫酸離子濃度較佳為低於3ppm。此外，前述硫酸離子濃度雖越小越好，但例如為0.1ppm以上。 The aforementioned sulfate ion concentration is preferably less than 3 ppm. Further, the sulfuric acid ion concentration is preferably as small as possible, but is, for example, 0.1 ppm or more.

密封用薄片11，在厚度成為250μm時之熱硬化後的透濕度，於溫度85℃、濕度85%、168小時之條件下，以500g/m2．24小時以下為佳，較佳為400g/m2．24小時以下，更佳為300g/m2．24小時以下。此外，前述透濕度雖越小越好，但例如為1g/m2．24小時以上。密封用薄片11在厚度成為250μm時之熱硬化後的透濕度，於溫度85℃、濕度85%、168小時之條件下，若為500g/m2．24小時以下，則水分難以從外部侵入到中空部分。其結果，可抑制離子性雜質融入來自外部的水分而到達電子裝置上。 The moisture-tight moisture permeability of the sheet 11 for sealing at a thickness of 250 μm was 500 g/m 2 under the conditions of a temperature of 85 ° C, a humidity of 85%, and a 168 hour. It is preferably 24 hours or less, preferably 400 g/m 2 . Below 24 hours, more preferably 300g/m 2 . Below 24 hours. Further, the above-mentioned moisture permeability is preferably as small as possible, but is, for example, 1 g/m 2 . More than 24 hours. The moisture permeability after heat-sealing of the sheet 11 for sealing at a thickness of 250 μm was 500 g/m 2 under the conditions of a temperature of 85 ° C, a humidity of 85%, and 168 hours. Below 24 hours, it is difficult for moisture to intrude into the hollow portion from the outside. As a result, it is possible to suppress the ionic impurities from entering the external moisture and reaching the electronic device.

如此一來，除使中空型電子裝置密封用薄片之離子性雜質的滲出量減少以外，亦可藉由降低透濕度，而更提昇使用該中空型電子裝置密封用薄片所製造的中空型電子裝置封裝之製品信賴性。 In this way, in addition to reducing the amount of bleed out of the ionic impurities in the sheet for sealing the hollow electronic device, the hollow type electronic device manufactured by using the sheet for sealing the hollow electronic device can be further improved by reducing the moisture permeability. The reliability of the packaged product.

接著，針對密封用薄片11之組成進行說明。 Next, the composition of the sheet 11 for sealing will be described.

密封用薄片11，較佳為包含環氧樹脂、及酚樹脂。藉此，可得到良好的熱硬化性。 The sealing sheet 11 preferably contains an epoxy resin and a phenol resin. Thereby, good thermosetting property can be obtained.

環氧樹脂並無特別限定。可使用例如：三苯基甲烷型環氧樹脂、甲酚酚醛清漆型環氧樹脂、聯苯型環氧樹脂、改質雙酚A型環氧樹脂、雙酚A型環氧樹脂、雙酚F型環氧樹脂、改質雙酚F型環氧樹脂、二環戊二烯型環氧樹脂、酚酚醛清漆型環氧樹脂、苯氧基樹脂等之各種環氧樹脂。此等環氧樹脂係可單獨使用，亦可併用2種以上。 The epoxy resin is not particularly limited. For example, triphenylmethane type epoxy resin, cresol novolak type epoxy resin, biphenyl type epoxy resin, modified bisphenol A type epoxy resin, bisphenol A type epoxy resin, bisphenol F can be used. Epoxy resin, modified bisphenol F type epoxy resin, dicyclopentadiene type epoxy resin, phenol novolak type epoxy resin, phenoxy resin and other epoxy resins. These epoxy resins may be used singly or in combination of two or more.

就確保環氧樹脂之硬化後的韌性及環氧樹脂的反應性之觀點而言，以環氧當量150~250，軟化點或熔點為50~130℃之在常溫下為固體者為佳，其中，就信賴性之觀點而言，更佳為三苯基甲烷型環氧樹脂、甲酚酚醛清漆型環氧樹脂、聯苯型環氧樹脂。 From the viewpoint of ensuring the toughness after curing of the epoxy resin and the reactivity of the epoxy resin, it is preferable that the epoxy equivalent is 150 to 250, and the softening point or melting point is 50 to 130 ° C, which is solid at normal temperature, wherein From the viewpoint of reliability, a triphenylmethane type epoxy resin, a cresol novolak type epoxy resin, and a biphenyl type epoxy resin are more preferable.

酚樹脂係只要在與環氧樹脂之間產生硬化反應者則無特別限定。例如，使用酚酚醛清漆樹脂、酚芳烷基樹脂、聯苯芳烷基樹脂、二環戊二烯型酚樹脂、甲酚酚醛清漆樹脂、可溶酚醛樹脂等。此等酚樹脂係可單獨使用，亦可併用2種以上。 The phenol resin is not particularly limited as long as it causes a curing reaction with the epoxy resin. For example, a phenol novolak resin, a phenol aralkyl resin, a biphenyl aralkyl resin, a dicyclopentadiene type phenol resin, a cresol novolak resin, a resol resin, or the like is used. These phenol resins may be used singly or in combination of two or more.

酚樹脂，就與環氧樹脂之反應性的觀點而言，以使用羥基當量為70~250，軟化點為50~110℃者為佳，其中就硬化反應性高的觀點而言，可適當使用酚酚醛清漆樹脂。此外，就信賴性的觀點而言，亦可適當使用如同酚芳烷基樹脂或聯苯芳烷基樹脂之類的低吸濕性者。 The phenol resin is preferably one having a hydroxyl group equivalent of 70 to 250 and a softening point of 50 to 110 ° C from the viewpoint of reactivity with an epoxy resin, and may be suitably used from the viewpoint of high curing reactivity. Phenolic novolac resin. Further, from the viewpoint of reliability, a low hygroscopicity such as a phenol aralkyl resin or a biphenyl aralkyl resin can be suitably used.

環氧樹脂與酚樹脂之摻合比例，就硬化反應性的觀點而言，較佳為相對於環氧樹脂中之環氧基1當量，以使酚樹脂中之羥基的合計成為0.7~1.5當量的方式摻合，更佳為0.9~1.2當量。 The blending ratio of the epoxy resin and the phenol resin is preferably from 1 equivalent to the epoxy group in the epoxy resin from the viewpoint of curing reactivity, so that the total of the hydroxyl groups in the phenol resin is 0.7 to 1.5 equivalents. The blending method is preferably 0.9 to 1.2 equivalents.

密封用薄片11中之環氧樹脂及酚樹脂的合計含量，較佳為2.0重量%以上，更佳為3.0重量%以上。若為2.0重量%以上，則良好地得到對於電子裝置、基板等之接著力。密封用薄片11中之環氧樹脂及酚樹脂的合計含量，較佳為20重量%以下，更佳為10重量%以下。若為20重量%以 下，則可減低吸濕性。 The total content of the epoxy resin and the phenol resin in the sheet 11 for sealing is preferably 2.0% by weight or more, and more preferably 3.0% by weight or more. When it is 2.0% by weight or more, the adhesion to an electronic device, a substrate, or the like is favorably obtained. The total content of the epoxy resin and the phenol resin in the sheet 11 for sealing is preferably 20% by weight or less, more preferably 10% by weight or less. If it is 20% by weight Underneath, it can reduce the hygroscopicity.

密封用薄片11，較佳為包含熱塑性樹脂。藉此，可得到未硬化時之處理性、或硬化物之低應力性。 The sheet 11 for sealing preferably contains a thermoplastic resin. Thereby, the rationality of the uncured state or the low stress of the cured product can be obtained.

熱塑性樹脂係可列舉：天然橡膠、丁基橡膠、異戊二烯橡膠、氯丁二烯橡膠、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯樹脂、聚碳酸酯樹脂、熱塑性聚醯亞胺樹脂、6-耐隆或6,6-耐隆等之聚醯胺樹脂、苯氧基樹脂、丙烯酸樹脂、PET或PBT等之飽和聚酯樹脂、聚醯胺醯亞胺樹脂、氟樹脂、苯乙烯-異丁烯-苯乙烯嵌段共聚物等。此等熱塑性樹脂係可單獨，或將2種以上合併使用。其中，就低應力性、低吸水性的觀點而言，較佳為苯乙烯-異丁烯-苯乙烯嵌段共聚物。 Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate copolymer, and polybutadiene. a resin, a polycarbonate resin, a thermoplastic polyimide resin, a polyamide resin such as 6-Nylon or 6,6-Nylon, a phenolic resin, an acrylic resin, a saturated polyester resin such as PET or PBT, Polyamidoximine resin, fluororesin, styrene-isobutylene-styrene block copolymer, and the like. These thermoplastic resins may be used singly or in combination of two or more. Among them, from the viewpoint of low stress and low water absorption, a styrene-isobutylene-styrene block copolymer is preferred.

密封用薄片11中之熱塑性樹脂的含量，較佳為1.0重量%以上，更佳為1.5重量%以上。若為1.0重量%以上，則可得到柔軟性、可撓性。密封用薄片11中之熱塑性樹脂的含量，較佳為3.5重量%以下，更佳為3重量%以下。若為3.5重量%以下，則與電子裝置或基板之接著性良好。 The content of the thermoplastic resin in the sheet 11 for sealing is preferably 1.0% by weight or more, and more preferably 1.5% by weight or more. When it is 1.0% by weight or more, flexibility and flexibility can be obtained. The content of the thermoplastic resin in the sheet 11 for sealing is preferably 3.5% by weight or less, more preferably 3% by weight or less. When it is 3.5% by weight or less, the adhesion to an electronic device or a substrate is good.

密封用薄片11，較佳為包含無機質填充劑。 The sealing sheet 11 preferably contains an inorganic filler.

無機質填充劑並無特別限定，可使用以往周知的各種填充劑，可列舉例如：石英玻璃、滑石、二氧化矽(熔融二氧化矽或結晶性二氧化矽等)、氧化鋁、氮化鋁、氮化矽、氮化硼之粉末。此等係可單獨使用，亦可併用2種以上。其中，就可良好地減低線膨脹係數的理由而言，較佳為二氧化矽、氧化鋁，更佳為二氧化矽。 The inorganic filler is not particularly limited, and various conventionally known fillers can be used, and examples thereof include quartz glass, talc, cerium oxide (melted cerium oxide or crystalline cerium oxide), alumina, and aluminum nitride. A powder of tantalum nitride or boron nitride. These may be used singly or in combination of two or more. Among them, in order to satisfactorily reduce the coefficient of linear expansion, cerium oxide, aluminum oxide, and more preferably cerium oxide are preferable.

二氧化矽，較佳為二氧化矽粉末，更佳為熔融二氧化矽粉末。熔融二氧化矽粉末，雖可列舉球狀熔融二氧化矽粉末、破碎熔融二氧化矽粉末，但就流動性的觀點而言，較佳為球狀熔融二氧化矽粉末。其中，以平均粒徑為10~30μm之範圍者為佳，以15~25μm之範圍者為更佳。 The cerium oxide is preferably a cerium oxide powder, more preferably a molten cerium oxide powder. The molten cerium oxide powder may be a spherical molten cerium oxide powder or a crushed molten cerium oxide powder. From the viewpoint of fluidity, a spherical molten cerium oxide powder is preferred. Among them, those having an average particle diameter of 10 to 30 μm are preferred, and those having a range of 15 to 25 μm are more preferred.

另外，平均粒徑，例如，可藉由使用從母體所任意萃取出的試料，並使用雷射繞射散亂式粒度分布測定裝置進行測定而導出。 Further, the average particle diameter can be derived, for example, by using a sample arbitrarily extracted from the matrix and measuring it using a laser diffraction type particle size distribution measuring apparatus.

密封用薄片11中之無機質填充劑的含量，較佳為相對於密封用薄片11全體，為70~90體積%，更佳為74~85體積%。若前述無機質填充劑的含量，相對於密封用薄片11全體為70體積%以上，則可容易地降低透濕度。另一方面，若前述無機質填充劑的含量相對於密封用薄片11全體為90體積%以下，則柔軟性、流動性、接著性更良好。 The content of the inorganic filler in the sheet 11 for sealing is preferably 70 to 90% by volume, and more preferably 74 to 85% by volume based on the entire sheet 11 for sealing. When the content of the inorganic filler is 70% by volume or more based on the entire sealing sheet 11, the moisture permeability can be easily lowered. On the other hand, when the content of the inorganic filler is 90% by volume or less based on the entire sealing sheet 11, the flexibility, fluidity, and adhesion are further improved.

無機質填充劑的含量，亦可以「重量%」為單位進行說明。代表性地針對二氧化矽之含量，以「重量%」為單位進行說明。 The content of the inorganic filler may also be described in terms of "% by weight". The content of cerium oxide is typically described in terms of "% by weight".

二氧化矽，由於通常比重為2.2g/cm3，因此二氧化矽的含量(重量%)之適當範圍係如以下所述。 As the cerium oxide, since the specific gravity is usually 2.2 g/cm 3 , the appropriate range of the content (% by weight) of cerium oxide is as follows.

亦即，密封用薄片11中之二氧化矽的含量，較佳為81重量%以上，更佳為84重量%以上。密封用薄片11中之二氧化矽的含量，較佳為94重量%以下，更佳為91重量%以下。 That is, the content of cerium oxide in the sheet 11 for sealing is preferably 81% by weight or more, and more preferably 84% by weight or more. The content of cerium oxide in the sheet 11 for sealing is preferably 94% by weight or less, and more preferably 91% by weight or less.

氧化鋁，由於通常比重為3.9g/cm3，因此氧化鋁 的含量(重量%)之適當範圍係如以下所述。 Alumina, since the specific gravity is usually 3.9 g/cm 3 , the appropriate range of the content (% by weight) of alumina is as follows.

亦即，密封用薄片11中之氧化鋁的含量，較佳為88重量%以上，更佳為90重量%以上。密封用薄片11中之氧化鋁的含量，較佳為97重量%以下，更佳為95重量%以下。 That is, the content of the alumina in the sheet 11 for sealing is preferably 88% by weight or more, and more preferably 90% by weight or more. The content of the alumina in the sheet 11 for sealing is preferably 97% by weight or less, more preferably 95% by weight or less.

密封用薄片11，較佳為包含離子捕捉劑。若含有離子捕捉劑，則可更加抑制離子性雜質到達電子裝置。 The sealing sheet 11 preferably contains an ion trapping agent. If an ion trapping agent is contained, it is possible to further suppress the ionic impurities from reaching the electronic device.

前述離子捕捉劑，可列舉例如：水滑石類化合物、氫氧化鉍、五氧化二銻等。此等係可單獨或2種以上合併使用。其中，就不含有重金屬而具有離子捕捉性的觀點而言，較佳使用水滑石類化合物。 Examples of the ion trapping agent include a hydrotalcite compound, barium hydroxide, and antimony pentoxide. These may be used alone or in combination of two or more. Among them, a hydrotalcite compound is preferably used from the viewpoint of not containing a heavy metal and having ion trapping properties.

前述離子捕捉劑之平均粒徑，就流動性的觀點而言，較佳為0.1~50μm之範圍內。另外，平均粒徑，例如，可藉由使用從母體所任意萃取出的試料，並使用雷射繞射散亂式粒度分布測定裝置進行測定而導出。 The average particle diameter of the ion scavenger is preferably in the range of 0.1 to 50 μm from the viewpoint of fluidity. Further, the average particle diameter can be derived, for example, by using a sample arbitrarily extracted from the matrix and measuring it using a laser diffraction type particle size distribution measuring apparatus.

前述離子捕捉劑之含有比例，較佳為相對於密封用薄片11全體設定為0.01~2重量%之範圍，特佳為0.01~1重量%。藉由將離子捕捉劑之含有比例設為相對於密封用薄片11全體為0.01重量%以上，可得到充分的離子捕捉性。此外，藉由將離子捕捉劑之含有比例設為相對於密封用薄片11全體為2重量%以下，可抑制成形時之封裝污染。 The content of the ion scavenger is preferably in the range of 0.01 to 2% by weight, and particularly preferably 0.01 to 1% by weight, based on the entire sheet 11 for sealing. When the content ratio of the ion scavenger is 0.01% by weight or more based on the entire sealing sheet 11, a sufficient ion trapping property can be obtained. In addition, by setting the content ratio of the ion scavenger to 2% by weight or less based on the entire sheet for sealing 11, it is possible to suppress package contamination during molding.

密封用薄片11，較佳為包含硬化促進劑。 The sheet 11 for sealing preferably contains a hardening accelerator.

硬化促進劑，係只要使環氧樹脂與酚樹脂之硬化進行者便無特別限定，可列舉例如：三苯基膦、四苯基鏻四苯基硼酸鹽等之有機磷系化合物；2-苯基-4,5-二羥甲基咪 唑、2-苯基-4-甲基-5-羥甲基咪唑等之咪唑系化合物等。其中，基於即使隨著混練時之溫度上昇硬化反應亦不急遽進行，而可良好地製作密封用薄片11的理由，較佳為2-苯基-4,5-二羥甲基咪唑。 The curing accelerator is not particularly limited as long as the epoxy resin and the phenol resin are cured, and examples thereof include an organic phosphorus compound such as triphenylphosphine or tetraphenylphosphonium tetraphenylborate; and 2-benzene. Base-4,5-dihydroxymethyl An imidazole compound such as azole or 2-phenyl-4-methyl-5-hydroxymethylimidazole. In particular, 2-block-4,5-dimethylolimidazole is preferred because the sealing sheet 11 can be produced satisfactorily without causing the curing reaction to proceed with the temperature increase during the kneading.

硬化促進劑之含量，較佳為相對於環氧樹脂及酚樹脂之合計100重量份為0.1~5重量份。 The content of the hardening accelerator is preferably 0.1 to 5 parts by weight based on 100 parts by weight of the total of the epoxy resin and the phenol resin.

密封用薄片11，較佳為包含難燃劑成分。藉此，可減低因零件短路或發熱等而起火時之燃燒擴大。難燃劑組成分，係可使用例如：氫氧化鋁、氫氧化鎂、氫氧化鐵、氫氧化鈣、氫氧化錫、複合化金屬氫氧化物等之各種金屬氫氧化物；磷腈系難燃劑等。 The sheet 11 for sealing preferably contains a flame retardant component. Thereby, it is possible to reduce the combustion expansion when the fire occurs due to a short circuit or heat generation of the component. For the flame retardant component, various metal hydroxides such as aluminum hydroxide, magnesium hydroxide, iron hydroxide, calcium hydroxide, tin hydroxide, and composite metal hydroxide can be used; Agents, etc.

就即使少量亦發揮難燃效果的觀點而言，磷腈系難燃劑所含有之磷元素的含有率，較佳為12重量%以上。 The content of the phosphorus element contained in the phosphazene-based flame retardant is preferably 12% by weight or more from the viewpoint of exhibiting a flame retardant effect even in a small amount.

密封用薄片11中之難燃劑成分的含量，於全有機成分(無機填料除外)中，較佳為10重量%以上，更佳為15重量%以上。若為10重量%以上，則可良好地得到難燃性。密封用薄片11中之熱塑性樹脂的含量，較佳為30重量%以下，更佳為25重量%以下。若為30重量%以下，則有硬化物之物性降低(具體而言，係玻璃轉移溫度或高溫樹脂強度等之物性的降低)少的傾向。 The content of the flame retardant component in the sheet 11 for sealing is preferably 10% by weight or more, and more preferably 15% by weight or more, based on the total organic component (excluding the inorganic filler). When it is 10% by weight or more, flame retardancy can be favorably obtained. The content of the thermoplastic resin in the sheet 11 for sealing is preferably 30% by weight or less, more preferably 25% by weight or less. When it is 30% by weight or less, the physical properties of the cured product tend to decrease (specifically, the decrease in physical properties such as glass transition temperature or high-temperature resin strength) tends to be small.

密封用薄片11，較佳為包含矽烷偶合劑。矽烷偶合劑並無特別限定，可列舉3-環氧丙氧基丙基三甲氧基矽烷等。 The sealing sheet 11 preferably contains a decane coupling agent. The decane coupling agent is not particularly limited, and examples thereof include 3-glycidoxypropyltrimethoxydecane.

密封用薄片11中之矽烷偶合劑的含量，較佳為 0.1~3重量%。若為0.1重量%以上，則可充分得到硬化物的強度而降低吸水率。若為3重量%以下，則可降低排氣量。 The content of the decane coupling agent in the sheet 11 for sealing is preferably 0.1 to 3% by weight. When it is 0.1% by weight or more, the strength of the cured product can be sufficiently obtained to lower the water absorption rate. If it is 3% by weight or less, the amount of exhaust gas can be reduced.

密封用薄片11，較佳為包含顏料。顏料並無特別限定，可列舉碳黑等。 The sheet 11 for sealing preferably contains a pigment. The pigment is not particularly limited, and examples thereof include carbon black.

密封用薄片11中之顏料的含量，較佳為0.1~2重量%。若為0.1重量%以上，則在以雷射標記等進行標記時得到良好的標記性。若為2重量%以下，則可充分得到硬化物強度。 The content of the pigment in the sheet 11 for sealing is preferably 0.1 to 2% by weight. When it is 0.1% by weight or more, good marking property is obtained when marking with a laser mark or the like. When it is 2% by weight or less, the strength of the cured product can be sufficiently obtained.

另外，於樹脂組成物中，除上述各成分以外，可因應需要而適當摻合其他的添加劑。 Further, in the resin composition, in addition to the above respective components, other additives may be appropriately blended as needed.

密封用薄片11，雖可為單層結構，亦可為層合了2以上之密封用薄片的多層結構，但基於無層間剝離之虞，且薄片厚的均勻性高，容易降低透濕度的理由，較佳為單層結構。 The sealing sheet 11 may have a single-layer structure or a multilayer structure in which two or more sealing sheets are laminated. However, the reason why the sheet thickness is not uniform and the uniformity of the sheet thickness is high is easy to reduce the moisture permeability. Preferably, it is a single layer structure.

密封用薄片11的厚度雖無特別限定，但就作為密封用薄片使用的觀點而言，例如為50μm~2000μm。 The thickness of the sheet 11 for sealing is not particularly limited, but is, for example, 50 μm to 2000 μm from the viewpoint of use as a sheet for sealing.

密封用薄片11之製造方法並無特別限定。可列舉例如：調製用以形成密封用薄片11的樹脂組成物之混練物，將所得到的混練物塑性加工成薄片狀的方法、或將於溶劑中溶解或分散有用以形成密封用薄片11的樹脂組成物者(清漆)塗佈於間隔物等，然後使其乾燥而得到的方法。採用將混練物塑性加工成薄片狀的方法時，由於可不使用溶劑而製作密封用薄片11，因此可抑制中空型電子裝置(例如， SAW過濾器13)因揮發的溶劑而受到影響。 The method for producing the sheet 11 for sealing is not particularly limited. For example, a kneaded product of a resin composition for forming the sealing sheet 11 may be prepared, a method of plastically processing the obtained kneaded material into a sheet shape, or a solution for dissolving or dispersing in a solvent to form the sealing sheet 11 may be mentioned. A method in which a resin composition (varnish) is applied to a spacer or the like and then dried. When the method of plastically processing the kneaded material into a sheet shape is used, since the sealing sheet 11 can be produced without using a solvent, the hollow type electronic device can be suppressed (for example, The SAW filter 13) is affected by the volatile solvent.

具體而言，藉由將後述之各成分以混合輥、加壓式捏合機、擠出機等之周知的混練機進行熔融混練而調製混練物，將所得到的混練物塑性加工成薄片狀。混練條件方面，溫度較佳為上述各成分之軟化點以上，例如為30~150℃，若考慮環氧樹脂之熱硬化性，則較佳為40~140℃，更佳為60~120℃。時間，例如為1~30分鐘，較佳為5~15分鐘。 Specifically, the kneaded material is prepared by melt-kneading each component described later by a known kneading machine such as a mixing roll, a pressure kneader, or an extruder, and the obtained kneaded product is plastically processed into a sheet shape. In the kneading conditions, the temperature is preferably at least the softening point of the above components, and is, for example, 30 to 150 ° C. When considering the thermosetting property of the epoxy resin, it is preferably 40 to 140 ° C, more preferably 60 to 120 ° C. The time is, for example, 1 to 30 minutes, preferably 5 to 15 minutes.

混練，較佳為在減壓條件下(減壓環境下)進行。藉此，可脫氣，並且可防止氣體侵入混練物。減壓條件下之壓力，較佳為0.1kg/cm2以下，更佳為0.05kg/cm2以下。減壓下之壓力的下限雖無特別限定，但例如1×10-4kg/cm2以上。 The kneading is preferably carried out under reduced pressure (under reduced pressure). Thereby, it is possible to degas and prevent gas from intruding into the kneaded material. The pressure under reduced pressure is preferably 0.1 kg/cm 2 or less, more preferably 0.05 kg/cm 2 or less. The lower limit of the pressure under reduced pressure is not particularly limited, but is, for example, 1 × 10 -4 kg / cm 2 or more.

熔融混練後之混練物，較佳為不進行冷卻而以高溫狀態直接進行塑性加工。塑性加工方法並無特別限制，可列舉平板沖壓法、T模擠出法、螺紋模擠出法、輥軋壓延法、輥軋混練法、充氣擠出法、共擠出法、壓延成形法等等。塑性加工溫度方面，較佳為上述各成分之軟化點以上，若考慮環氧樹脂之熱硬化性及成形性，則例如為40~150℃，較佳為50~140℃，更佳為70~120℃。 It is preferred that the kneaded material after the melt kneading is directly subjected to plastic working at a high temperature without cooling. The plastic working method is not particularly limited, and examples thereof include a flat press method, a T-die extrusion method, a thread die extrusion method, a roll rolling method, a roll kneading method, a pneumatic extrusion method, a co-extrusion method, a calendering method, and the like. Wait. The plastic working temperature is preferably at least the softening point of each of the above components, and considering the thermosetting property and moldability of the epoxy resin, for example, it is 40 to 150 ° C, preferably 50 to 140 ° C, more preferably 70 °. 120 ° C.

密封用薄片11，係使用於需要中空密封的電子裝置(例如，SAW(Surface Acoustic Wave)過濾器；壓力感測器、振動感測器等之MEMS(Micro Electro Mechanical Systems))之密封。其中，可特別適合使用於SAW過濾器之密封。 The sealing sheet 11 is used for sealing of an electronic device (for example, a SAW (Surface Acoustic Wave) filter; a pressure sensor, a MEMS (Micro Electro Mechanical Systems) such as a vibration sensor). Among them, it is particularly suitable for use in the sealing of SAW filters.

密封方法並無特別限定，可利用以往周知的方法進行密封。可列舉例如，以被覆基板上之中空型電子裝置的方式將未硬化之密封用薄片11層合(載置)於基板上，接著，使密封用薄片11硬化而進行密封的方法等。基板並無特別限定，可列舉例如：印刷配線基板、陶瓷基板、矽基板、金屬基板等。 The sealing method is not particularly limited, and the sealing can be carried out by a conventionally known method. For example, a method of laminating (mounting) the uncured sealing sheet 11 on a substrate so as to cover the hollow sheet electronic device on the substrate, and then sealing the sealing sheet 11 to be sealed is performed. The substrate is not particularly limited, and examples thereof include a printed wiring board, a ceramic substrate, a tantalum substrate, and a metal substrate.

[中空型電子裝置封裝之製造方法] [Manufacturing Method of Hollow Electronic Device Package]

第2圖A~第2圖C係分別模式性顯示本發明之一實施形態之中空型電子裝置封裝的製造方法之一步驟的圖。於本實施形態中，藉由密封用薄片11將搭載於印刷配基板12上之作為中空型電子裝置的SAW過濾器13進行中空密封，而製作中空型電子裝置封裝。 Figs. 2A to 2C are diagrams each schematically showing one step of a method of manufacturing a hollow type electronic device package according to an embodiment of the present invention. In the present embodiment, the SAW filter 13 as a hollow type electronic device mounted on the printed circuit board 12 is hermetically sealed by the sealing sheet 11 to produce a hollow type electronic device package.

(SAW過濾器搭載基板準備步驟) (SAW filter mounting substrate preparation step)

於SAW過濾器搭載基板準備步驟中，係準備搭載有複數之SAW過濾器13的印刷配線基板12(參照第2圖A)。SAW過濾器13，係可藉由將形成有特定的梳形電極之壓電結晶以周知的方法進行切割並予以個片化而形成。為了將SAW過濾器13搭載於印刷配線基板12，可使用倒裝晶片接合器或晶粒接合器等之周知的裝置。SAW過濾器13與印刷配線基板12，係透過凸緣等之突起電極13a而電連接。此外，SAW過濾器13與印刷配線基板12之間，係以不阻礙在SAW過濾器表面之表面彈性波的傳送之方式來維持中空部分 14。SAW過濾器13與印刷配線基板12之間的距離係可適當設定，一般而言為15~50μm左右。 In the SAW filter mounting substrate preparation step, the printed wiring board 12 on which the plurality of SAW filters 13 are mounted is prepared (see FIG. 2A). The SAW filter 13 can be formed by cutting and singulating piezoelectric crystals having a specific comb-shaped electrode by a known method. In order to mount the SAW filter 13 on the printed wiring board 12, a well-known device such as a flip chip bonder or a die bonder can be used. The SAW filter 13 and the printed wiring board 12 are electrically connected to each other via a bump electrode 13a such as a flange. Further, between the SAW filter 13 and the printed wiring board 12, the hollow portion is maintained in such a manner as not to hinder the transmission of the elastic wave on the surface of the SAW filter surface. 14. The distance between the SAW filter 13 and the printed wiring board 12 can be appropriately set, and is generally about 15 to 50 μm.

(密封步驟) (sealing step)

於密封步驟中，以被覆SAW過濾器13的方式將密封用薄片11層合於印刷配線基板12，以密封用薄片11將SAW過濾器13進行樹脂密封(參照第2圖B)。密封用薄片11，係發揮用以保護SAW過濾器13及其附帶要素以免外部環境污染之密封樹脂的功能。 In the sealing step, the sealing sheet 11 is laminated on the printed wiring board 12 so as to cover the SAW filter 13, and the SAW filter 13 is resin-sealed by the sealing sheet 11 (see FIG. 2B). The sealing sheet 11 functions as a sealing resin for protecting the SAW filter 13 and its accompanying elements from external environmental contamination.

將密封用薄片11層合於印刷配線基板12上的方法並無特別限定，可藉由熱加壓或層壓等周知的方法而進行。熱加壓條件方面，溫度例如為40~100℃，較佳為50~90℃，壓力例如為0.1~10MPa，較佳為0.5~8MPa，時間例如為0.3~10分鐘，較佳為0.5~5分鐘。藉此，可得到電子裝置埋入熱硬化性密封用薄片16的電子裝置封裝。此外，若考慮密封用薄片11對於SAW過濾器13及印刷配線基板12之密著性及追隨性的提昇，則較佳為於減壓條件下(例如0.1~5kPa)中進行加壓。 The method of laminating the sealing sheet 11 on the printed wiring board 12 is not particularly limited, and can be carried out by a known method such as hot pressing or lamination. In terms of hot pressurization conditions, the temperature is, for example, 40 to 100 ° C, preferably 50 to 90 ° C, and the pressure is, for example, 0.1 to 10 MPa, preferably 0.5 to 8 MPa, and the time is, for example, 0.3 to 10 minutes, preferably 0.5 to 5 minute. Thereby, an electronic device package in which the electronic device is embedded in the thermosetting sealing sheet 16 can be obtained. In addition, when the adhesion of the sealing sheet 11 to the SAW filter 13 and the printed wiring board 12 and the followability are improved, it is preferable to pressurize under a reduced pressure condition (for example, 0.1 to 5 kPa).

(密封體形成步驟) (sealing body forming step)

於密封體形成步驟中，將密封用薄片11進行熱硬化處理而形成密封體15(參照第2圖B)。 In the sealing body forming step, the sealing sheet 11 is thermally hardened to form a sealing body 15 (see FIG. 2B).

熱硬化處理之條件方面，加熱溫度較佳為100℃以上，更佳為120℃以上。另一方面，加熱溫度之上限較佳為 200℃以下，更佳為180℃以下。加熱時間，較佳為10分鐘以上，更佳為30分鐘以上。另一方面，加熱時間之上限較佳為180分鐘以下，更佳為120分鐘以下。此外，亦可因應需要而進行加壓，較佳為0.1MPa以上，更佳為0.5MPa以上。另一方面，上限較佳為10MPa以下，更佳為5MPa以下。 In terms of the conditions of the heat hardening treatment, the heating temperature is preferably 100 ° C or higher, more preferably 120 ° C or higher. On the other hand, the upper limit of the heating temperature is preferably Below 200 ° C, more preferably below 180 ° C. The heating time is preferably 10 minutes or longer, more preferably 30 minutes or longer. On the other hand, the upper limit of the heating time is preferably 180 minutes or shorter, more preferably 120 minutes or shorter. Further, the pressure may be applied as needed, and is preferably 0.1 MPa or more, and more preferably 0.5 MPa or more. On the other hand, the upper limit is preferably 10 MPa or less, more preferably 5 MPa or less.

(切割步驟) (cutting step)

接著，可進行密封體15之切割(參照第2圖C)。藉此，可得到SAW過濾器13單元之電子裝置封裝18。 Next, the sealing body 15 can be cut (refer to FIG. 2C). Thereby, the electronic device package 18 of the unit of the SAW filter 13 can be obtained.

(基板安裝步驟) (substrate mounting step)

可因應需要，進行基板安裝步驟，該步驟係對於電子裝置封裝18形成再配線及凸緣，而將其安裝於另外的基板(未圖示)。為了將電子裝置封裝18安裝於基板，可使用倒裝晶片接合器或晶粒接合器等之周知的裝置。 A substrate mounting step may be performed as needed. This step forms a rewiring and a flange for the electronic device package 18, and mounts it on another substrate (not shown). In order to mount the electronic device package 18 on the substrate, a well-known device such as a flip chip bonder or a die bonder can be used.

[實施例] [Examples]

以下，例示性地詳細說明此發明之較佳的實施例。但，此實施例記載的材料或摻合量等，只要無特別限定性的記載，則非為僅將本發明之範圍限定於此等的要旨者。 Hereinafter, preferred embodiments of the invention will be exemplarily described in detail. However, the materials, blending amounts, and the like described in the examples are not intended to limit the scope of the invention to those skilled in the art unless otherwise specified.

針對實施例所使用的成分進行說明。 The components used in the examples will be described.

環氧樹脂：新日鐵化學(股)製之YSLV-80XY(雙酚F型環氧樹脂、環氧當量200g/eq.軟化點80℃) Epoxy resin: YSLV-80XY manufactured by Nippon Steel Chemical Co., Ltd. (bisphenol F epoxy resin, epoxy equivalent 200g/eq. softening point 80 °C)

酚樹脂：明和化成公司製之MEH-7851-SS(具有聯苯芳 烷基骨架之酚樹脂、羥基當量203g/eq.軟化點67℃) Phenol resin: MEH-7851-SS made by Minghe Chemical Co., Ltd. (with biphenyl aryl) Alkyl skeleton phenol resin, hydroxyl equivalent 203g / eq. Softening point 67 ° C)

熱塑性樹脂：kaneka公司製之SIBSTER 072T(苯乙基-異丁烯-苯乙烯嵌段共聚物) Thermoplastic resin: SIBSTER 072T (phenethyl-isobutylene-styrene block copolymer) manufactured by kaneka

離子捕捉劑：協和化學工業公司製之DHT-4A Ion trapping agent: DHT-4A manufactured by Kyowa Chemical Industry Co., Ltd.

無機充填劑：電氣化學工業公司製之FB-9454FC(熔融球狀二氧化矽、平均粒徑20μm) Inorganic filler: FB-9454FC manufactured by Electrochemical Industry Co., Ltd. (melted spherical cerium oxide, average particle size 20 μm)

矽烷偶合劑：信越化學公司製之KBM-403(3-環氧丙氧基丙基三甲氧基矽烷) Decane coupling agent: KBM-403 (3-glycidoxypropyltrimethoxydecane) manufactured by Shin-Etsu Chemical Co., Ltd.

碳黑：三菱化學公司製之# 20 Carbon Black: Made by Mitsubishi Chemical Corporation # 20

難燃劑：伏見製藥所製之FP-100(磷腈系難燃劑：以式(4)所表示之化合物) Flame Retardant: FP-100 (phosphazene-based flame retardant: compound represented by formula (4)) manufactured by Fushimi Pharmaceutical Co., Ltd.

(式中、m係表示3~4之整數)。 (where m is an integer from 3 to 4).

硬化促進劑：四國化成工業公司製之2PHZ-PW(2-苯基-4,5-二羥甲基咪唑) Hardening accelerator: 2PHZ-PW (2-phenyl-4,5-dihydroxymethylimidazole) manufactured by Shikoku Chemical Industry Co., Ltd.

實施例1~2 Example 1~2

依照表1記載之摻合比，摻合各成分，藉由輥軋混練機 在60~120℃、10分鐘、減壓條件下(0.01kg/cm2)進行熔融混練，而調製出混練物。接著，將所得到的混練物，藉由平板沖壓法，形成為薄片狀，而製作出表1所示之厚度的密封用薄片。 Each component was blended according to the blending ratio described in Table 1, and melt-kneaded by a roll kneader at 60 to 120 ° C for 10 minutes under reduced pressure (0.01 kg/cm 2 ) to prepare a kneaded product. Next, the obtained kneaded product was formed into a sheet shape by a flat plate press method, and a sealing sheet having a thickness shown in Table 1 was produced.

實施例3 Example 3

依照表1記載的摻合，於溶劑(以重量比計，甲基乙基酮(MEK)：甲苯=1：1)中摻合各成分，而得到非溶劑成分濃度90%之塗佈液。 According to the blending described in Table 1, each component was blended in a solvent (by weight ratio, methyl ethyl ketone (MEK): toluene = 1:1) to obtain a coating liquid having a non-solvent component concentration of 90%.

以使乾燥後的厚度成為50μm的方式，藉由缺角輪塗佈機，將所得到的塗佈液塗佈成厚度50μm之聚酯薄膜A(三菱化學聚酯公司製、MRF-50)之剝離處理面上，使其乾燥。接著，將厚度38μm之聚酯薄膜B(三菱化學聚酯公司製、MRF-38)之剝離處理面貼合於乾燥後的清漆上，而調製出薄膜密封用薄片。 The obtained coating liquid was applied to a polyester film A (manufactured by Mitsubishi Chemical Polyester Co., Ltd., MRF-50) having a thickness of 50 μm by a notch wheel coater so that the thickness after drying was 50 μm. The treated surface was peeled off and dried. Then, a release-treated surface of a polyester film B (manufactured by Mitsubishi Chemical Co., Ltd., MRF-38) having a thickness of 38 μm was bonded to the dried varnish to prepare a film-sealing sheet.

然後，一邊將聚酯薄膜A及聚酯薄膜B適當剝離，一邊藉由輥式層壓機，將5片薄膜密封用薄片進行層合，藉此而製作出厚度250μm之密封用薄片。 Then, the polyester film A and the polyester film B were appropriately peeled off, and five sheets of the film-sealing sheets were laminated by a roll laminator to prepare a sealing sheet having a thickness of 250 μm.

比較例1 Comparative example 1

依照表1記載之摻合比，摻合各成分，於其中添加與各成分之總量同量的甲基乙基酮，調製出清漆。以使乾燥後的厚度成為50μm的方式，藉由缺角輪塗佈機，將所得到的清漆塗佈於厚度50μm之聚酯薄膜A(三菱化學聚酯公司製、 MRF-50)之剝離處理面上，使其乾燥。接著，將厚度38μm之聚酯薄膜B(三菱化學聚酯公司製、MRF-38)之剝離處理面貼合於乾燥後的清漆上，而調製出薄膜密封用薄片。 Each component was blended according to the blending ratio described in Table 1, and methyl ethyl ketone in the same amount as the total amount of each component was added thereto to prepare a varnish. The obtained varnish was applied to a polyester film A having a thickness of 50 μm (manufactured by Mitsubishi Chemical Polyester Co., Ltd.) by a notch wheel coater so that the thickness after drying was 50 μm. MRF-50) was dried on a release treated surface. Then, a release-treated surface of a polyester film B (manufactured by Mitsubishi Chemical Co., Ltd., MRF-38) having a thickness of 38 μm was bonded to the dried varnish to prepare a film-sealing sheet.

然後，一邊將聚酯薄膜A及聚酯薄膜B適當剝離，一邊藉由輥式層壓機，將5片薄膜密封用薄片進行層合，藉此而製作出厚度250μm之密封用薄片。 Then, the polyester film A and the polyester film B were appropriately peeled off, and five sheets of the film-sealing sheets were laminated by a roll laminator to prepare a sealing sheet having a thickness of 250 μm.

使用所得到的密封用薄片進行下述的評估。將結果顯示於表1。 The following evaluation was carried out using the obtained sealing sheet. The results are shown in Table 1.

[離子性雜質萃取濃度之測定] [Determination of ionic impurity extraction concentration]

將實施例、及比較例之密封用薄片分別切取重量5g，裝入直徑58mm、高度37mm之圓柱狀的封閉式Teflon(註冊商標)製容器中，添加離子交換水50ml。其後，在121℃、2氣壓下放置20小時。取出薄膜之後，使用DIONEX公司製、DX320及DX500，測定出離子交換水中之氯化物離子濃度、鈉離子濃度、磷酸離子濃度、及硫酸離子濃度。將結果顯示於表1。 Each of the sheets for sealing of the examples and the comparative examples was cut into a weight of 5 g, and placed in a cylindrical closed Teflon (registered trademark) container having a diameter of 58 mm and a height of 37 mm, and 50 ml of ion-exchanged water was added thereto. Thereafter, it was allowed to stand at 121 ° C under 2 atmospheres for 20 hours. After the film was taken out, the chloride ion concentration, the sodium ion concentration, the phosphate ion concentration, and the sulfate ion concentration in the ion exchange water were measured using DIONEX Corporation, DX320, and DX500. The results are shown in Table 1.

[透濕度之測定] [Measurement of moisture permeability]

使實施例、比較例所製成的密封用薄片熱硬化。熱硬化條件係以150℃進行加熱60分鐘。其後，依據JIS Z 0208(圓筒平板法(cup method))之規定，測定出實施例、比較例所製成的密封用薄片(熱硬化後)之透濕度。 The sealing sheets produced in the examples and the comparative examples were thermally cured. The heat hardening conditions were carried out by heating at 150 ° C for 60 minutes. Thereafter, the moisture permeability of the sealing sheet (after heat curing) prepared in the examples and the comparative examples was measured in accordance with JIS Z 0208 (cup method).

測定條件係如下所述。將結果顯示於表1。 The measurement conditions are as follows. The results are shown in Table 1.

(測定條件) (measurement conditions)

溫度85℃、濕度85%、168小時、密封用薄片的厚度：250μm Temperature 85 ° C, humidity 85%, 168 hours, thickness of sealing sheet: 250 μm

11‧‧‧中空型電子裝置密封用薄片(密封薄片) 11‧‧‧Hard type electronic device sealing sheet (sealing sheet)

11a‧‧‧支撐體 11a‧‧‧Support

Claims (6)

一種中空型電子裝置密封用薄片，其特徵為滿足下述(a)~下述(d)中至少1個，(a)將重量5g之中空型電子裝置密封用薄片浸漬於離子交換水50ml中，在121℃、2氣壓下放置20小時之後的前述離子交換水中之氯化物離子濃度，以質量基準計為低於30ppm；(b)將重量5g之中空型電子裝置密封用薄片浸漬於離子交換水50ml中，在121℃、2氣壓下放置20小時之後的前述離子交換水中之鈉離子濃度，以質量基準計為低於10ppm；(c)將重量5g之中空型電子裝置密封用薄片浸漬於離子交換水50ml中，在121℃、2氣壓下放置20小時之後的前述離子交換水中之磷酸離子濃度，以質量基準計為低於30ppm；(d)將重量5g之中空型電子裝置密封用薄片浸漬於離子交換水50ml中，在121℃、2氣壓下放置20小時之後的前述離子交換水中之硫酸離子濃度，以質量基準計為低於5ppm。 A sheet for sealing a hollow electronic device, which is characterized in that at least one of the following (a) to (d) is satisfied, and (a) a sheet for sealing a hollow electronic device having a weight of 5 g is immersed in 50 ml of ion-exchanged water. The chloride ion concentration in the ion-exchanged water after standing at 121 ° C and 2 atmospheres for 20 hours was less than 30 ppm on a mass basis; (b) immersing 5 g of the hollow electronic device sealing sheet in ion exchange The concentration of sodium ions in the ion-exchanged water after being allowed to stand at 121 ° C and 2 atm for 20 hours in 50 ml of water is less than 10 ppm on a mass basis; (c) immersing a sheet for sealing a hollow electronic device of 5 g by weight In 50 ml of ion-exchanged water, the concentration of phosphate ions in the ion-exchanged water after being left at 121 ° C and 2 atmospheres for 20 hours is less than 30 ppm on a mass basis; (d) a sheet for sealing a hollow electronic device having a weight of 5 g The concentration of the sulfate ion in the ion-exchanged water after being immersed in 50 ml of ion-exchanged water at 121 ° C and 2 atmospheres for 20 hours was less than 5 ppm on a mass basis. 如請求項1所記載之中空型電子裝置密封用薄片，其中成為厚度250μm時之熱硬化後的透濕度，係在溫度85℃、濕度85%、168小時的條件下，為500g/m2．24小時以下。 The hollow electronic device sealing sheet according to claim 1, wherein the moisture permeability after heat curing at a thickness of 250 μm is 500 g/m 2 under conditions of a temperature of 85 ° C, a humidity of 85%, and a 168 hour period. Below 24 hours. 如請求項1所記載之中空型電子裝置密封用薄片，其中相對於中空型電子裝置密封用薄片全體，含有70~90體積 %之無機質填充劑。 The sheet for sealing a hollow electronic device according to claim 1, wherein the sheet for sealing of the hollow electronic device contains 70 to 90 volumes. % of inorganic filler. 如請求項1所記載之中空型電子裝置密封用薄片，其係含有離子捕捉劑。 The hollow type electronic device sealing sheet according to claim 1, which contains an ion trapping agent. 如請求項4所記載之中空型電子裝置密封用薄片，其中前述離子捕捉劑係水滑石系化合物。 The hollow type electronic device sealing sheet according to claim 4, wherein the ion trapping agent is a hydrotalcite-based compound. 一種中空型電子裝置封裝之製造方法，其特徵為包含：以被覆搭載於基板上之1或複數個中空型電子裝置的方式，將如請求項1~5中任一項所記載之中空型電子裝置密封用樹脂薄片層合於前述中空型電子裝置上之層合步驟，以及使前述中空型電子裝置密封用樹脂薄片硬化而形成密封體之密封體形成步驟。 A method of manufacturing a hollow type electronic device package, comprising: hollow type electrons according to any one of claims 1 to 5, wherein one or more of the plurality of hollow type electronic devices are mounted on the substrate A laminating step of laminating a resin sheet for sealing a device to the hollow type electronic device, and a sealing body forming step of curing the resin sheet for sealing the hollow type electronic device to form a sealed body.
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