TW201503396A - 光伏裝置及製造光伏裝置之方法 - Google Patents
光伏裝置及製造光伏裝置之方法 Download PDFInfo
- Publication number
- TW201503396A TW201503396A TW103100772A TW103100772A TW201503396A TW 201503396 A TW201503396 A TW 201503396A TW 103100772 A TW103100772 A TW 103100772A TW 103100772 A TW103100772 A TW 103100772A TW 201503396 A TW201503396 A TW 201503396A
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- particles
- bus bar
- wavelength
- scattering structure
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 238000000149 argon plasma sintering Methods 0.000 claims abstract description 48
- 239000002245 particle Substances 0.000 claims description 50
- 239000006096 absorbing agent Substances 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 21
- 239000011146 organic particle Substances 0.000 claims description 15
- 239000010954 inorganic particle Substances 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 8
- 239000011230 binding agent Substances 0.000 claims description 7
- 229910010272 inorganic material Inorganic materials 0.000 claims description 3
- 239000011147 inorganic material Substances 0.000 claims description 3
- 239000011368 organic material Substances 0.000 claims description 2
- 230000004936 stimulating effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 description 23
- 239000000463 material Substances 0.000 description 13
- 229910000679 solder Inorganic materials 0.000 description 13
- 229920005549 butyl rubber Polymers 0.000 description 9
- 239000010949 copper Substances 0.000 description 9
- 239000007788 liquid Substances 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 238000012512 characterization method Methods 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 230000002745 absorbent Effects 0.000 description 3
- 239000002250 absorbent Substances 0.000 description 3
- YNLHHZNOLUDEKQ-UHFFFAOYSA-N copper;selanylidenegallium Chemical compound [Cu].[Se]=[Ga] YNLHHZNOLUDEKQ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 150000004770 chalcogenides Chemical class 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical group [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052951 chalcopyrite Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AKUCEXGLFUSJCD-UHFFFAOYSA-N indium(3+);selenium(2-) Chemical compound [Se-2].[Se-2].[Se-2].[In+3].[In+3] AKUCEXGLFUSJCD-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000417 polynaphthalene Polymers 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
- H01L31/0201—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising specially adapted module bus-bar structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
一種光伏裝置,包括一光伏面板、一匯流排及一光散射結構。光伏面板具有一上電極。匯流排係固著於上電極。光散射結構係固著於匯流排,並且具有至少一反射表面。反射表面係以一鈍角被配置於光伏面板,以將光線反射至光伏面板之上。
Description
本發明是有關於一種光伏裝置,特別是有關於一種製造光伏裝置之方法。
光伏(Photovoltaic)電池及面板包括有複數個平坦結構。在此,平坦結構具有一典型矩形之底材、被成型於底材上之一背電極、被成型於背電極上之一層光伏吸收器、被成型於光伏吸收器上之一透明緩衝層、以及被成型於透明緩衝層上之一透明上電極。在吸收器上之光線照耀會造成一電流流動於背電極與上電極之間。電流是被收集於連接於上電極之一匯流排(bus bar)之中。
由一特別結構之一光伏面板所產生之電流量一般是直接關聯於面板之面積。由於匯流排係覆蓋面板之部分,故匯流排會降低面板之有效面積,因而會降低面板之效率。
本發明基本上採用如下所詳述之特徵以為了要解決上述之問題。
本發明之一實施例提供一種光伏裝置,其包括一光伏面板,具有一上電極;一匯流排,固著於該上電極;以及一光散射結構,固著於該匯流排,並且具有至少一反射表面,
其中,該至少一反射表面係以一鈍角被配置於該光伏面板,以將光線反射至該光伏面板之上。
根據上述之實施例,該光散射結構具有複數個光反射微粒,以及該等光反射微粒係固著於該匯流排。
根據上述之實施例,該等光反射微粒包括複數個無機微粒。
根據上述之實施例,該光散射結構具有複數個有機微粒,該等有機微粒係與該等無機微粒混合,以及該等有機微粒係吸收具有一第一波長之光線,並且係發出具有一第二波長之光線。
根據上述之實施例,該等光反射微粒包括複數個有機微粒。
根據上述之實施例,該等有機微粒係吸收具有一第一波長之光線,並且係發出具有一第二波長之光線。
根據上述之實施例,該光散射結構具有複數個光反射微粒,以及該等光反射微粒係以一捆縛器黏著於該匯流排。
根據上述之實施例,該捆縛器包括丁基橡膠。
根據上述之實施例,該至少一反射表面係藉由固著於該匯流排之複數個光反射微粒所成型。
根據上述之實施例,該等光反射微粒包括一無機材料。
根據上述之實施例,該光伏裝置更包括複數個有機微粒,其中,該等有機微粒係與複數個磷光微粒混合,以及
該等磷光微粒係吸收具有一第一波長之光線,並且係發出具有一第二波長之光線。
根據上述之實施例,該等光反射微粒包括一有機材料。
根據上述之實施例,該等光反射微粒係吸收具有一第一波長之光線,並且係發出具有一第二波長之光線。
本發明之另一實施例提供一種製造光伏裝置之方法,其包括:施加一第一導電層於一底材;成型一吸收物層於該第一導電層之上;成型一緩衝層於該吸收物層之上;成型一第二導電層於該緩衝層之上;固著一匯流排於該第二導電層之上;以及固著一光散射結構於該匯流排,其中,該光散射結構具有至少一反射表面,以及該至少一反射表面係以一鈍角被配置於一光伏面板之一平面,以將光線反射至該光伏面板之上。
根據上述之實施例,該光散射結構具有複數個光反射微粒。
根據上述之實施例,該等光反射微粒包括有複數個無機微粒。
根據上述之實施例,該光散射結構具有複數個磷光微粒,該等磷光微粒係與該等無機微粒混合,以及該等磷光微粒係吸收具有一第一波長之光線,並且係發出具有一第二波長之光線。
根據上述之實施例,固著一光散射結構於該匯流排之步驟包括:印刷複數個光反射微粒於該匯流排之上。
根據上述之實施例,固著一光散射結構於該匯流
排之步驟包括:成型複數個光反射微粒與一捆縛器之一混合物;以及施加該等光反射微粒與該捆縛器之該混合物於該匯流排。
本發明之又一實施例提供一種光伏裝置,其包括一光伏面板,具有一上電極;一匯流排,固著於該上電極;以及一光散射結構,固著於該匯流排,並且具有複數個微粒,其中,該等微粒係吸收具有一第一波長之光線,並且係發出具有一第二波長之光線,以及該等微粒係被配置去導引具有該第二波長之光線至該上電極之上。
為使本發明之上述目的、特徵和優點能更明顯易懂,下文特舉較佳實施例並配合所附圖式做詳細說明。
100‧‧‧光伏裝置
101、300、400、601、701‧‧‧光伏面板
103‧‧‧匯流排
105、215、501‧‧‧光散射結構
107‧‧‧前表面
201‧‧‧底材
203‧‧‧背電極
205‧‧‧吸收物層
207‧‧‧緩衝層
209‧‧‧上電極
211‧‧‧匯流排
213、305‧‧‧條帶
217‧‧‧反射表面
219‧‧‧鈍角
301‧‧‧第二光散射結構
303‧‧‧支撐器
401‧‧‧第三光散射結構
503‧‧‧無機微粒
505‧‧‧有機微粒
600、700‧‧‧系統
603‧‧‧載架
605、711‧‧‧箭頭
607‧‧‧焊錫施加單元
609‧‧‧焊錫、焊錫條帶
611‧‧‧捲軸
613‧‧‧帶、銅帶
615‧‧‧印刷頭
617‧‧‧反射微粒
703‧‧‧液體丁基橡膠源
705‧‧‧反射微粒源
707‧‧‧混合器
709‧‧‧噴嘴
713‧‧‧層
P1‧‧‧第一圖案
P2‧‧‧第二圖案
P3‧‧‧第三圖案
第1圖係顯示根據本發明之各種實施例之一光伏面板之前視示意圖;第2圖係顯示根據第1圖之線2-2之剖面示意圖;第3圖係顯示根據本發明之各種實施例之一第二光伏面板之剖面示意圖;第4圖係顯示根據本發明之各種實施例之一第三光伏面板之剖面示意圖;第5圖係顯示根據本發明之各種實施例之一光伏面板之細部剖面示意圖;第6圖係顯示根據本發明之各種實施例之用於應用一匯流排及光散射結構於光伏面板之一製程之示意圖;
第7圖係顯示根據本發明之各種實施例之用於應用一光散射結構於一匯流排之一製程之示意圖;第8圖係顯示根據本發明之各種實施例之用於製造一光伏面板之一製程之流程圖;第9圖係顯示根據本發明之各種實施例之用於應用一光散射結構於一匯流排之一第一製程之流程圖;以及第10圖係顯示根據本發明之各種實施例之用於應用一光散射結構於一匯流排之一第二製程之流程圖。
茲配合圖式說明本發明之較佳實施例。
有關本發明之前述及其他技術內容、特點與功效,在以下配合參考圖式之一較佳實施例的詳細說明中,將可清楚的呈現。以下實施例中所提到的方向用語,例如:上、下、左、右、前或後等,僅是參考附加圖式的方向。因此,使用的方向用語是用來說明並非用來限制本發明。
請參閱第1圖,一光伏裝置100包括有一平面、矩形之光伏面板101,其具有一匯流排103及一光散射結構105,固著於其一前表面107之相對側邊。
請參閱第2圖,其係顯示根據第1圖之線2-2之剖面示意圖。面板101具有一底材201。底材201之適當材料可以包括有玻璃(例如,鈉鈣玻璃)、陶瓷、金屬(例如,不鏽鋼及鋁之薄片)、聚合物(例如,聚酰胺)、聚對苯二甲酸乙二醇酯、聚萘二甲酸、聚合烴、纖維素聚合物、聚碳酸酯、聚醚或其結合物等。由鉬所製成之一背電極203是被成型於底材201之上。一第
一圖案P1是利用雷射熔損被切割於背電極203之中向下至底材201。
一吸收物層205是被成型於背電極203及第一圖案P1之上。在一些實施例之中,吸收物層205係為一銅銦鎵二硒化物(CIGS)、一第I-III-V12族半導體材料(包括銅、銦、鎵及硒。CIGS係為銅銦硒以及銅鎵硒之一固體溶液(CIS)。CIGS係為一四面結合之半導體,具有黃銅礦晶體結構以及一能帶間隙(bandgap),能帶間隙係連續地從大約1.0eV(對於銅銦硒)變化至大約1.7eV(對於銅鎵硒)。
在一些實施例之中,吸收物層205能包括有一P-型材料。舉例來說,吸收物層205能夠是一P-型硫族材料。在一進一步的實施例之中,吸收物層205能夠是一CIGSCu(In,Ga)Se2材料。在其他實施例之中,具有Cu(In,Ga)(Se,S)2或“CIGSS,”CuInSe2、CuGaSe2、CuInS2及Cu(In,Ga)S2.之硫族材料能被使用做為一吸收物材料。適當之P-型摻雜物具有無限制硼(B)或元素週期表之第II或III族之其他元素。在另一實施例之中,吸收物層能夠包括有n-型材料,其包括有硫化鎘(CdS)。
一薄的緩衝層207能夠被成型於吸收物層205之上。緩衝層207能夠是由一透明金屬氧化物(例如,釩氧化物或氧化鉬)所構成。一第二圖案P2是利用機械切割被切割於緩衝層207之中向下至背電極203。接著,一透明導電氧化物(例如,含氧化物或氧化銦錫)之一上電極209是被成型於緩衝層207之上。最後,一第三圖案P3是再次利用機械切割被切割於上電極209、緩衝層207及吸收物層205之中向下至背電極203。
匯流排103及散射結構105具有一匯流排211及一光散射結構215。匯流排211具有藉由焊錫之一條帶213電性連接於上電極209之表面107之一銅的導電帶。光散射結構215是適當地黏著於匯流排211。光散射結構215能夠是由一反射性無機材料(例如,一金屬或一金屬氧化物)所製成。光散射結構215包括有一反射表面217。反射表面217是被配置去與面板101之平面形成一鈍角219。如上所述,反射表面217係反射入射光至吸收物層205之上,因而可增加面板101之效率。
第3圖係顯示根據本發明之實施例之具有一第二光散射結構301之一光伏面板300之剖面示意圖。就像面板101一樣,光伏面板300具有一底材201。由鉬所製成之一背電極203是被成型於底材201之上。一第一圖案P1是被切割於背電極203之中向下至底材201。一吸收物層205是被成型於背電極203及第一圖案P1之上。一薄的緩衝層207能夠被成型於吸收物層205之上。一第二圖案P2是被切割於緩衝層207及吸收物層205之中向下至背電極203。接著,一透明導電氧化物(例如,含氧化物或氧化銦錫)之一上電極209是被成型於緩衝層207之上。最後,一第三圖案P3是被切割於上電極209、緩衝層207及吸收物層205之中向下至背電極203。具有銅之一導電帶之一匯流排211是藉由焊錫之一條帶213電性連接於上電極209之表面107。
光散射結構301具有黏著於匯流排211之一三角形剖面的支撐器303。支撐器303能夠是由金屬、金屬氧化物或其他適當之支撐材料所製成。光散射結構301具有黏著於支撐器303及匯流排211之磷光材料之條帶305。除了反射入射光至吸
收物層205之上外,條帶305之磷光材料係吸收較短波長之光線,並且條帶305係發出較長波長之光線,其中一些是被導引至吸收物層205之上。條帶305能夠包括有一有機磷光材料,例如,Y3Al5O12;Ce,Y2SiO5;Ce,InBO3;或Tb,MgWO4等。
第4圖係顯示根據本發明之實施例之具有一第三光散射結構401之一光伏面板400之剖面示意圖。就像面板101、光伏面板300一樣,光伏面板400具有一底材201。由鉬所製成之一背電極203是被成型於底材201之上。一第一圖案P1是被切割於背電極203之中向下至底材201。一吸收物層205是被成型於背電極203及第一圖案P1之上。一薄的緩衝層207能夠被成型於吸收物層205之上。一第二圖案P2是被切割於緩衝層207及吸收物層205之中向下至背電極203。接著,一透明導電氧化物(例如,含氧化物或氧化銦錫)之一上電極209是被成型於緩衝層207之上。最後,一第三圖案P3是被切割於上電極209、緩衝層207及吸收物層205之中向下至背電極203。具有銅之一導電帶之一匯流排211是藉由焊錫之一條帶213電性連接於上電極209之表面107。
第三光散射結構401具有沉積及黏著於匯流排211上之複數個反射微粒。每一個反射微粒具有用於反射入射光之反射面。第三光散射結構401之微粒能夠包括有一金屬(例如,鉬)或一金屬氧化物(例如,氧化鋁)。
第5圖係顯示根據本發明之實施例之一光散射結構501之細部剖面示意圖。光散射結構501具有複數個反射性之無機微粒503(由三角形所表示)以及有機微粒505(由圓形所表
示),被分佈於匯流排213之表面上。無機微粒503具有反射表面去導引入射光。有機微粒505能夠是磷光性的去吸收短波長之光線以及發出長波長之光線。
第6圖係顯示根據本發明之一些實施例之用於應用一匯流排及一光散射結構於一光伏面板601之一系統600之示意圖。光伏面板601具有一底材201。一背電極203是被成型於底材201之上。一吸收物層205是被成型於背電極203之上。一薄的緩衝層207能夠被成型於吸收物層205之上。接著,一透明導電氧化物(例如,含氧化物或氧化銦錫)之一上電極209是被成型於緩衝層207之上。
系統600包括有一載架603。載架603是被定位於光伏面板601之上,並且載架603是被用於相對於光伏面板601移動於箭頭605之方向之中。載架603係攜載一焊錫施加單元607以及一捲軸611。焊錫施加單元607係施加熔化之焊錫609之一條帶於上電極209,以及捲軸611係塗佈銅之一帶613於焊錫條帶609以形成一匯流排。載架603最後會攜載施加一層或反射微粒617於銅帶613之一印刷頭615,因而會形成一光散射結構。
第7圖係顯示根據本發明之一些實施例之用於應用一光散射結構於一光伏面板701之一系統700之示意圖。光伏面板701具有一底材201。一背電極203是被成型於底材201之上。一吸收物層205是被成型於背電極203之上。一薄的緩衝層207能夠被成型於吸收物層205之上。接著,一透明導電氧化物(例如,含氧化物或氧化銦錫)之一上電極209是被成型於緩衝層207之上。一導體之一帶是藉由焊錫213之一層被黏著於上電極
209,以形成一匯流排。
系統700包括有一液體丁基橡膠源703及一反射微粒源705,其是連接於供應液體丁基橡膠,其是做為捆縛器以及反射微粒至一混合器707,其係混合液體丁基橡膠與反射微粒。一噴嘴709係容納來自於混合器707之液體丁基橡膠與反射微粒之混合物。系統700是被用於相對於光伏面板701移動於箭頭711之方向之中,藉此,噴嘴709係施加液體丁基橡膠與反射微粒之混合物之一層713至帶211,以形成一光散射結構。
第8圖係顯示根據本發明之實施例之用於製造光伏面板之一製程之流程圖。成型底材之玻璃是被清洗於方塊801。接著,在方塊803,下電極是被施加於玻璃。在方塊805,製程係執行背電極之P1刻畫。在方塊807,製程然後形成CIGS吸收物於下電極之上。在方塊809,一緩衝層是被成型於CIGS吸收物之上。然後,在方塊811,製程係執行CIGS吸收物及緩衝層之P2刻畫。在方塊813,製程係施加上電極於緩衝層。接著,在方塊815,製程係執行上電極、CIGS吸收物及緩衝層之P3刻畫。
在施加前述之層以及執行刻畫運作之後,製程係偵測被成型之面板之一邊緣,在方塊817。製程係施加一焊錫條帶於鄰接面板之被偵測邊緣之上電極,在方塊819。接著,製程係施加匯流排帶於焊錫條帶,在方塊821。在成型匯流排之後,製程係施加光散射結構於匯流排,在方塊823。在施加光散射結構之後,製程係層壓面板,在方塊825。在方塊827,製程係測試面板。
第9圖及第10圖係顯示根據本發明之實施例之用於應用一光散射結構於一匯流排帶之製程之流程圖。在第9圖之中,製程係混合散射微粒與液體丁基橡膠,在方塊901。接著,製程係施加液體丁基橡膠/散射微粒混合物之一層於匯流排帶,在方塊903。在第10圖之中,製程係印刷散射材料於匯流排帶之上,在方塊1001。
雖然本發明已以較佳實施例揭露於上,然其並非用以限定本發明,任何熟習此項技藝者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
100‧‧‧光伏裝置
101‧‧‧光伏面板
103‧‧‧匯流排
107‧‧‧前表面
201‧‧‧底材
203‧‧‧背電極
205‧‧‧吸收物層
207‧‧‧緩衝層
209‧‧‧上電極
211‧‧‧匯流排
213‧‧‧條帶
215‧‧‧光散射結構
217‧‧‧反射表面
219‧‧‧鈍角
P1‧‧‧第一圖案
P2‧‧‧第二圖案
P3‧‧‧第三圖案
Claims (10)
- 一種光伏裝置,包括:一光伏面板,具有一上電極;一匯流排,固著於該上電極;以及一光散射結構,固著於該匯流排,並且具有至少一反射表面,其中,該至少一反射表面係以一鈍角被配置於該光伏面板,以將光線反射至該光伏面板之上。
- 如申請專利範圍第1項所述之光伏裝置,其中,該光散射結構具有複數個光反射微粒,以及該等光反射微粒係固著於該匯流排。
- 如申請專利範圍第2項所述之光伏裝置,其中,該等光反射微粒包括複數個無機微粒,該光散射結構具有複數個有機微粒,該等有機微粒係與該等無機微粒混合,以及該等有機微粒係吸收具有一第一波長之光線,並且係發出具有一第二波長之光線。
- 如申請專利範圍第2項所述之光伏裝置,其中,該等光反射微粒包括複數個有機微粒,以及該等有機微粒係吸收具有一第一波長之光線,並且係發出具有一第二波長之光線。
- 如申請專利範圍第1項所述之光伏裝置,其中,該至少一反射表面係藉由固著於該匯流排之複數個光反射微粒所成型。
- 如申請專利範圍第5項所述之光伏裝置,其中,該等光反射微粒包括一無機材料,該等有機微粒係與複數個磷光微粒混合,以及該等磷光微粒係吸收具有一第一波長之光線, 並且係發出具有一第二波長之光線。
- 如申請專利範圍第5項所述之光伏裝置,其中,該等光反射微粒包括一有機材料,以及該等光反射微粒係吸收具有一第一波長之光線,並且係發出具有一第二波長之光線。
- 一種製造光伏裝置之方法,包括:施加一第一導電層於一底材;成型一吸收物層於該第一導電層之上;成型一緩衝層於該吸收物層之上;成型一第二導電層於該緩衝層之上;固著一匯流排於該第二導電層之上;以及固著一光散射結構於該匯流排,其中,該光散射結構具有至少一反射表面,以及該至少一反射表面係以一鈍角被配置於一光伏面板之一平面,以將光線反射至該光伏面板之上。
- 如申請專利範圍第8項所述之製造光伏裝置之方法,其中,固著一光散射結構於該匯流排之步驟包括:印刷複數個光反射微粒於該匯流排之上;成型複數個光反射微粒與一捆縛器之一混合物;以及施加該等光反射微粒與該捆縛器之該混合物於該匯流排。
- 一種光伏裝置,包括:一光伏面板,具有一上電極;一匯流排,固著於該上電極;以及一光散射結構,固著於該匯流排,並且具有複數個微粒,其中,該等微粒係吸收具有一第一波長之光線,並且係發 出具有一第二波長之光線,以及該等微粒係被配置去導引具有該第二波長之光線至該上電極之上。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/936,428 US20150007868A1 (en) | 2013-07-08 | 2013-07-08 | Enhanced photovoltaic performance with modified bus bar region |
Publications (1)
Publication Number | Publication Date |
---|---|
TW201503396A true TW201503396A (zh) | 2015-01-16 |
Family
ID=52131989
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW103100772A TW201503396A (zh) | 2013-07-08 | 2014-01-09 | 光伏裝置及製造光伏裝置之方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20150007868A1 (zh) |
KR (1) | KR20150006768A (zh) |
CN (1) | CN104282773A (zh) |
TW (1) | TW201503396A (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6425945B2 (ja) * | 2014-08-21 | 2018-11-21 | 東洋アルミニウム株式会社 | インターコネクタ用光拡散部材及びこれを備える太陽電池用インターコネクタ、並びに太陽電池モジュール |
KR20210017497A (ko) * | 2019-08-08 | 2021-02-17 | 재단법인대구경북과학기술원 | 경사형 박막 태양전지 |
USD947759S1 (en) * | 2020-01-10 | 2022-04-05 | Rec Solar Pte. Ltd. | Solar array |
CN113644153A (zh) * | 2021-08-13 | 2021-11-12 | 上海晶澳太阳能科技有限公司 | 一种光伏组件以及制备工艺 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5428249A (en) * | 1992-07-15 | 1995-06-27 | Canon Kabushiki Kaisha | Photovoltaic device with improved collector electrode |
US20070125415A1 (en) * | 2005-12-05 | 2007-06-07 | Massachusetts Institute Of Technology | Light capture with patterned solar cell bus wires |
TWI390748B (zh) * | 2007-03-09 | 2013-03-21 | Light energy of the battery efficiency film | |
JP2011517118A (ja) * | 2008-04-11 | 2011-05-26 | クォルコム・メムズ・テクノロジーズ・インコーポレーテッド | Pvの美観および効率を改善する方法 |
JP5436901B2 (ja) * | 2009-03-23 | 2014-03-05 | 三洋電機株式会社 | 太陽電池モジュールの製造方法 |
TW201227980A (en) * | 2010-12-30 | 2012-07-01 | Univ Nat Cheng Kung | Thin film solar cell and method for manufacturing the same |
CN202042504U (zh) * | 2011-05-04 | 2011-11-16 | 上海交大泰阳绿色能源有限公司 | 增加太阳能组件功率的涂锡带 |
CN102544174B (zh) * | 2012-01-06 | 2014-02-19 | 南通美能得太阳能电力科技有限公司 | 一种增加光能利用率的太阳能电池组件 |
-
2013
- 2013-07-08 US US13/936,428 patent/US20150007868A1/en not_active Abandoned
- 2013-09-11 CN CN201310412695.XA patent/CN104282773A/zh active Pending
-
2014
- 2014-01-09 TW TW103100772A patent/TW201503396A/zh unknown
- 2014-05-14 KR KR1020140057638A patent/KR20150006768A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
KR20150006768A (ko) | 2015-01-19 |
US20150007868A1 (en) | 2015-01-08 |
CN104282773A (zh) | 2015-01-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI514597B (zh) | 光電轉換裝置和其製造方法 | |
US20130306130A1 (en) | Solar module apparatus with edge reflection enhancement and method of making the same | |
TW201503396A (zh) | 光伏裝置及製造光伏裝置之方法 | |
JP5377520B2 (ja) | 光電変換セル、光電変換モジュールおよび光電変換セルの製造方法 | |
WO2016017617A1 (ja) | 光電変換装置およびタンデム型光電変換装置ならびに光電変換装置アレイ | |
TW201030994A (en) | Two sided light absorbing type solar cell | |
JP5871786B2 (ja) | 太陽電池モジュール | |
US20150270417A1 (en) | Deposition process for solar cell front contact | |
JP7124068B2 (ja) | 半透明薄膜ソーラーモジュール | |
JP5451781B2 (ja) | 光電変換装置およびその製造方法 | |
US20150255659A1 (en) | Solar module | |
KR20120085577A (ko) | 태양전지 및 그의 제조방법 | |
US20220320356A1 (en) | Photovoltaic module, back sheet of photovoltaic module and manufacturing method of photovoltaic module | |
JP2016157807A (ja) | 光電変換装置 | |
KR102009308B1 (ko) | 산화갈륨 패시베이션층이 삽입된 고효율 양면 투광형 cigs계 태양전지와 그 제조방법 및 이를 적용한 건물일체형태양광발전모듈과 탠덤태양전지 | |
JP2016122743A (ja) | 光電変換装置 | |
KR20120116806A (ko) | 태양 전지 | |
JP2016171186A (ja) | 光電変換装置 | |
KR20100051445A (ko) | 태양 전지 모듈 | |
JP6192562B2 (ja) | 太陽電池素子および太陽電池モジュール | |
KR101729338B1 (ko) | 태양전지 및 그 제조방법 | |
KR101210007B1 (ko) | 태양광 발전장치 | |
KR101449097B1 (ko) | 태양전지 | |
JP5909662B2 (ja) | 太陽電池モジュール | |
KR101219861B1 (ko) | 태양전지 및 그의 제조방법 |