CN104282773A - 利用改进的汇流条区域增强光伏性能 - Google Patents

利用改进的汇流条区域增强光伏性能 Download PDF

Info

Publication number
CN104282773A
CN104282773A CN201310412695.XA CN201310412695A CN104282773A CN 104282773 A CN104282773 A CN 104282773A CN 201310412695 A CN201310412695 A CN 201310412695A CN 104282773 A CN104282773 A CN 104282773A
Authority
CN
China
Prior art keywords
light
busbar
scattering structure
light scattering
wave length
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201310412695.XA
Other languages
English (en)
Inventor
陈世伟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TSMC Solar Ltd
Original Assignee
TSMC Solar Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TSMC Solar Ltd filed Critical TSMC Solar Ltd
Publication of CN104282773A publication Critical patent/CN104282773A/zh
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0547Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/02002Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H01L31/0201Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising specially adapted module bus-bar structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0216Coatings
    • H01L31/02161Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/055Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/073Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0749Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/52PV systems with concentrators
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/541CuInSe2 material PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/543Solar cells from Group II-VI materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Abstract

本发明提供了利用改进的汇流条区域增强光伏性能,其中,一种光伏器件包括具有顶部电极的平坦的光伏面板。汇流条被粘附于顶部电极。光散射结构被粘附于汇流条。光散射结构包括至少一个被配置为与光伏面板的平面成钝角的反射面以将光线反射至光伏面板。

Description

利用改进的汇流条区域增强光伏性能
技术领域
本发明总的来说涉及光伏电池和/或面板,更具体地,涉及具有改进的汇流条区来增强性能的光伏电池和/或面板。
背景技术
光伏电池和面板包括平坦的结构,该平坦的结构包括典型的矩形衬底、形成在衬底上的背面电极、形成在背面电极上的光伏吸收层、形成在吸收层上的透明缓冲层、以及形成在缓冲层上的透明顶部电极。照射在吸收层上的光使电流在背面电极和顶部电极之间流动。在连接至顶部电极的汇流条(bus bar)中收集电流。
由特定结构的光伏面板产生的电流量通常与面板的面积直接相关。由于汇流条覆盖了部分面板,从而阻挡部分吸收层吸收光,汇流条减少了面板的有效面积,从而降低面板的效率。
发明内容
根据本发明的一个方面,提供了一种光伏器件,包括:包括顶部电极的平坦的光伏面板;粘附于顶部电极的汇流条;以及粘附于汇流条的光散射结构,光散射结构包括被配置为与光伏面板的平面成钝角的至少一个反射面以将光反射至光伏面板。
优选地,光散射结构包括粘附于汇流条的多个光反射粒子。
优选地,光反射粒子包括无机材料。
优选地,光散射结构包括混合有无机粒子的多个有机粒子,有机粒子吸收第一波长的光并发射第二波长的光。
优选地,光反射粒子包括有机材料。
优选地,有机粒子吸收第一波长的光并发射第二波长的光。
优选地,光散射结构包括:粘附于汇流条的粘合剂中的多个光反射粒子。
优选地,粘合剂包括丁基橡胶。
优选地,由粘附于汇流条的多个光反射粒子形成至少一个反射面。
优选地,光反射粒子包括无机材料。
优选地,该光伏器件包括混合有磷光粒子的多个有机粒子,磷光粒子吸收第一波长的光并发射第二波长的光。
优选地,光反射粒子包括有机材料。
优选地,有机粒子吸收第一波长的光并发射第二波长的光。
根据本发明的另一方面,提供了一种制造光伏器件的方法,包括:将第一导电层施加于衬底;在第一导电层上形成吸收层;在吸收层上形成缓冲层;在缓冲层上形成第二导电层;将汇流条粘附于第二导电层;将光散射结构粘附于汇流条,光散射结构包括被配置为与光伏面板的平面成钝角的至少一个反射面以将光线反射至光伏面板。
优选地,光散射结构包括多个光反射粒子。
优选地,光反射粒子包括无机材料。
优选地,光散射结构包括混合有无机粒子的多个磷光粒子,磷光粒子吸收第一波长的光并发射第二波长的光。
优选地,将光散射结构粘附于汇流条包括:在汇流条上压印多个光反射粒子。
优选地,将光散射结构粘附于汇流条包括:形成光反射粒子和粘合剂的混合物;以及将光反射粒子和粘合剂的混合物施加于汇流条。
根据本发明的又一方面,提供了一种光伏器件,包括:包括顶部电极的平坦的光伏面板;粘附于顶部电极的汇流条;以及粘附于汇流条的光散射结构,光散射结构包括吸收第一波长的光并发射第二波长的光的多个粒子,粒子被配置为将所发射的第二波长的光导向至顶部电极上。
附图说明
当结合附图进行阅读时,根据下面详细的描述可以更好地理解本发明。应该强调的是,根据工业中的标准实践,对各种部件没有按比例绘制。实际上,为了清楚讨论起见,各种部件的尺寸可以被任意增大或缩小。
图1是根据本发明各个实施例的光伏面板的主视图;
图2是沿着图1中的线2-2截取的截面图;
图3是根据本发明各个实施例的第二光伏面板的截面图;
图4是根据本发明各个实施例的第三光伏面板的截面图;
图5是根据本发明各个实施例的光伏面板的详细截面图;
图6是根据本发明各个实施例的将汇流条和光散射结构施加于光伏面板的工艺的示意图;
图7是根据本发明各个实施例的将光散射结构施加于汇流条的工艺的示意图;
图8是根据本发明各个实施例的用于制造光伏面板的工艺的流程图;
图9是根据本发明各个实施例的将散射结构施加于汇流条的第一工艺的流程图;以及
图10是根据本发明各个实施例的将散射结构施加于汇流条的第二工艺的流程图。
具体实施方式
预期结合附图一起阅读示例性实施例的描述,所述附图被认为是整个说明书的一部分。在说明书中,相关术语诸如“下”、“上”、“水平”、“垂直”、“上方”、“下方”、“向上”、“向下”、“顶部”和“底部”及其派生词(例如,“水平地”、“向下地”、“向上地”等)应该被解释为是指如随后所述的或者如论述中的附图所示的方位。这些相关术语是为了便于描述,并不要求在具体方位上构造或操作装置。除非另有明确描述,关于耦合等的术语如“连接”和“互连”是指其中的器件或节点直接或间接地电连通。
应当了解为了实施本发明的不同部件,以下公开内容提供了许多不同的实施例或实例。以下描述元件和布置的特定实例以简化本发明。当然这些仅仅是实例并不旨在限定。在各个实例中本发明可以重复参考数字和/或字母。该重复是为了简明和清楚,而且其本身没有规定所述各个实施例和/或讨论的结构之间的关系
现在参考附图,首先参考图1,通常将根据本发明实施例的光伏器件指定为数字100。光伏器件100包括通常为矩形的平坦的面板101,其具有根据本发明各个实施例的粘附于其正面107的相对侧的通常被指定为数字103和105的汇流条和散射结构组合。
现在参考图2,其是沿着图1的线2-2截取的截面图,面板101包括衬底201。用于衬底201的合适材料包括,例如但不限于玻璃(如钠钙玻璃)、陶瓷、诸如不锈钢和铝的薄片的金属或诸如聚酰胺、聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二酯、聚合烃、纤维素聚合物、聚碳酸酯、聚醚、它们的组合等的聚合物。在衬底201上方形成钼等的背面电极203。通常使用激光烧蚀在背面电极203中向下切割第一图案P1至衬底201。
在背面电极203和图案P1上方形成吸收层205。在一些实施例中,吸收层205是铜铟镓(di)硒(CIGS),由铜、铟、镓和硒组成的I-III-VI2族半导体材料。CIGS是硒化铜铟(通常简称为“CIS”)和硒化铜镓的固体溶液。CIGS是四面体方式结合的具有黄铜矿晶体结构和1.0eV(对于硒化铜铟)至约1.7eV(对于硒化铜镓)之间连续变化的带隙的半导体。
在一些实施例中,吸收层205可以包括p型材料。例如,吸收层205可以是p型硫族化物材料。在另一个实施例中,吸收层205可以是CIGSCu()In,Ga)Se2材料。在其他实施例中,硫族化物材料包括但不限于Cu(In,Ga)(Se,S)2或“CIGSS”、CuInSe2、CuGaSe2、CuInS2、和Cu(In,Ga)S2。这些材料可用作吸收材料。可用于形成吸收层的合适的p型掺杂剂包括但不限于硼(B)或元素周期表中的II或III族的其他元素。在另一个实施例中,吸收层可以包括n型材料,其包括但不限于硫化镉(CdS)。
可以在吸收层205上方形成薄缓冲层207。可以由诸如氧化钒、氧化钼的透明金属氧化物形成缓冲层207。例如在缓冲层207和吸收层205中通过向下机械划线至背面电极203来切割第二图案P2。然后,在缓冲层207上形成诸如氧化锌或氧化铟锡的透明导电氧化物的顶部电极209。最后,例如在顶部电极209、缓冲层207和吸收层205中再次通过向下机械划线至背面电极203来切割第三图案P3。
汇流条和散射结构103(和105)包括汇流条211和适当地粘附至汇流条211的光散射结构215,其中汇流条211包括通过由焊料等形成的带213电连接至顶部电极209的表面107的由铜等形成的导电带。可由诸如金属或金属氧化物的反射无机材料形成光散射结构215。光散射结构包括被配置为与面板100形成的平面形成钝角219的反射面217。因此,反射面217将否则要被汇流条211阻挡的入射光反射到吸收层203,从而提高面板100的效率。
图3示出了根据本发明实施例的包括第二光散射结构301的光伏面板300的截面图。类似于光伏面板100,光伏面板300包括衬底201。在衬底201上方形成钼等的背面电极203。在背面电极203中向下切割第一图案P1至衬底201。在背面电极203和图案P1上方形成吸收层205。在吸收层205上方可形成薄缓冲层207。在缓冲层207和吸收层205中向下切割第二图案P2至背面电极203。然后,在缓冲层207上形成透明导电氧化物的顶部电极209。最后,在顶部电极209、缓冲层207和吸收层205中向下切割第三图案P3至背面电极203。包括由铜等形成的导电带的汇流条211通过由焊料等组成的带213电连接至顶部电极209的表面107。
光散射结构301包括粘附至汇流条211的三角形截面支撑件303。可以由金属、金属氧化物、或其他合适的支撑材料形成支撑件303。光散射结构301包括粘附至支撑件303和汇流条211的由磷光材料组成的带305。除了将入射光反射至吸收层205之外,带305的磷光材料还吸收短波长的光并发射出长波长的光,其中一部分被导向吸收层205。带305可包括有机磷光材料,诸如Y3Al5O12、Ce、Y2SiO5、Ce、InBO3、或Tb、MgWO4
图4示出了根据本发明的一些实施例的包括第三光散射结构401的光伏面板400的截面图。类似于光伏面板100和300,光伏面板400包括衬底201。在衬底201上方形成钼等的背面电极203。在背面电极203中向下切割第一图案P1至衬底201。在背面电极203和图案P1上方形成吸收层205。在吸收层205上方形成薄缓冲层207。在缓冲层207和吸收层205中向下切割第二图案P2至背面电极203。然后,在缓冲层207上形成透明导电氧化物的顶部电极209。最后,在顶部电极209、缓冲层207和吸收层205中向下切割第三图案P3至背面电极203。包括由铜等形成的导电带的汇流条211通过由焊料等组成的带213电连接至顶部电极209的表面107。
光散射结构401包括沉积并粘合至汇流条211的多个反射粒子。如三角形所代表的,每个粒子都包括用于朝向吸收层205反射否则要被汇流条211阻挡的入射光的反射小平面。光散射结构401的粒子可包括诸如钼的金属或诸如氧化铝(Al2O3)的金属氧化物。
图5是根据本发明实施例的光散射结构501的详细视图。光散射结构501包括分布在汇流条211的表面上的表示为三角形的多个反射无机粒子503和表示为圆形的多个有机粒子505。无机粒子503具有小平面并且它们包括反射面以直接反射入射光。有机粒子505可以是磷光材料以吸收短波长的光并发射长波长的光。
图6是根据本发明的一些实施例将汇流条和光散射结构施加于光伏面板601的系统600的示意图。光伏面板601包括衬底201。在衬底201上方形成背面电极203。在背面电极203上方形成吸收层205。在吸收层205上方形成薄缓冲层207。然后,在缓冲层207上形成透明导电氧化物的顶部电极209。
系统600包括设置在光伏面板601上方且相对于光伏面板601在箭头605的方向上移动的支架603。支架603承载:焊料施加单元607,其将软焊料带609施加于顶部电极209;以及卷轴611,其将铜带层613铺在焊料带609上以形成汇流条。支架603最终承载压印头(print head)615,其将层或反射粒子617施加于铜带613,从而形成光散射结构。
图7是根据本发明实施例的将光散射结构施加于光伏面板701的系统700的示意图。光伏面板701包括衬底201。在衬底201上方形成背面电极203。在背面电极203上方形成吸收层205。可在吸收层205上方形成薄缓冲层207。然后,在缓冲层207上形成透明导电氧化物的顶部电极209。诸如铜的导体带211通过焊料层213粘合至顶部电极209以形成汇流条。
系统700包括被连接以将用作粘合剂的液体丁基橡胶和反射粒子分别提供给混合器707的液体丁基橡胶源703和反射粒子源705,其中混合器707混合液体丁基橡胶和反射粒子。喷嘴709接收来自混合器707的液体丁基橡胶和反射粒子。系统700用于相对于光伏面板701在箭头711所示的方向移动,从而喷嘴709将液体丁基橡胶和反射粒子的混合物层713施加于带211以形成光散射结构。
图8是根据本发明的实施例用于制造光伏面板的工艺的流程图。在框801中,清洗形成衬底的玻璃。然后,在框803中,将底部电极施加于玻璃,以及在框805中,如上所述,该工艺实施背面电极的P1划线。然后如框807所示,在底部电极上形成CIGS吸收层。在框809中,可以在CIGS吸收层上形成缓冲层。在形成缓冲层的步骤之后,如框811所示,该工艺实施CIGS吸收层和缓冲层的P2划线。在实施P2划线之后,在框813中,该工艺将顶部电极施加于缓冲层。然后,如框815所示,该工艺实施顶部电极、缓冲层和CIGS吸收层的P3划线。
在施加上述层并实施划线操作之后,在框817中,该工艺检测上述形成的面板的边缘,并如框819所示,将焊料带施加于与面板的检测边缘相邻的顶部电极。然后,在框821中,该工艺将汇流条带施加于焊料带。如框823总体所示以及参考图9和图10所具体描述的,在形成汇流条之后,该工艺将光散射结构施加于汇流条带。在施加光散射结构之后,在框825中,该工艺对面板进行层压,并在框827中,对面板进行测试。
图9和图10是根据本发明实施例的将光散射结构施加于汇流条带的工艺的流程图。在图9中,在框901中,该工艺将散射粒子与液体丁基橡胶混合。然后,在框903中,该工艺将液体丁基橡胶/散射粒子混合物层施加于汇流条带。在图10中,如框1001所示,该工艺压印汇流条带上的散射材料。
在一些实施例中,光伏器件包括:平坦的光伏面板,包括顶部电极;汇流条,粘附于顶部电极;以及光散射结构,粘附至汇流条,光散射结构包括至少一个被配置为与光伏面板的平面成钝角的反射面以将光线反射至光伏面板。
在一些实施例中,光散射结构包括粘附于汇流条的多个光反射粒子。
在一些实施例中,光反射粒子包括无机材料。
在一些实施例中,光散射结构包括混合有无机粒子的多个有机粒子,有机粒子吸收第一波长的光并发射第二波长的光。
在一些实施例中,光反射粒子包括有机材料。
在一些实施例中,有机粒子吸收第一波长的光并发射第二波长的光。
在一些实施例中,光散射结构包括:粘附于汇流条的粘合剂中的多个光反射粒子。
在一些实施例中,粘合剂包括丁基橡胶。
在一些实施例中,通过粘附于汇流条的多个光反射粒子形成至少一个反射面。
在一些实施例中,光反射粒子包括无机材料。
在一些实施例中,光伏器件包括混合有磷光粒子的多个有机粒子,磷光粒子吸收第一波长的光并发射第二波长的光。
在一些实施例中,有机粒子吸收第一波长的光并发射第二波长的光。
在一些实施例中,一种制造光伏器件的方法,包括:将第一导电层施加于衬底;在第一导电层上形成吸收层;在吸收层上形成缓冲层;在缓冲层上形成第二导电层;将汇流条粘附于第二导电层;将光散射结构粘附于汇流条,光散射结构包括至少一个被配置为与光伏面板的平面成钝角的反射面以将光线反射至光伏面板。
在一些实施例中,光散射结构包括多个光反射粒子。
在一些实施例中,光反射粒子包括无机材料。
在一些实施例中,光散射结构包括混合有无机粒子的多个磷光粒子,磷光粒子吸收第一波长的光并发射第二波长的光。
在一些实施例中,将光散射结构粘附于汇流条包括:在汇流条上压印多个光反射粒子。
在一些实施例中,将光散射结构粘附于汇流条包括:形成光反射粒子和粘合剂的混合物;以及将光反射粒子和粘合剂的混合物施加于汇流条。
在一些实施例中,光伏器件包括:平坦的光伏面板,包括顶部电极;汇流条,粘附于顶部电极;以及光散射结构,粘附于汇流条,光散射结构包括吸收第一波长的光并发射第二波长的光的多个粒子,其中,粒子被配置为将所发射的第二波长的光导向顶部电极。
本发明所述的方法和系统可至少部分地体现在计算机执行程序的形式和用于实践这些程序的装置中。所公开的方法还可以至少部分地体现在有形的形式和计算机程序代码编码的非瞬态机器可读存储介质的形式。例如,媒体可以包括,RAM、ROM、CD-ROM、DVD-ROM、BD-ROM、硬盘驱动器,闪存或任何其他非瞬态机器可读存储介质,其中,当计算机程序代码装入计算机并被计算机执行,则计算机成为一种用来实践该方法的装置。该方法还可以至少部分地体现在计算机形式中,在该计算机中,计算机程序被装入和/或被执行,从而,计算机成为用于实践该方法的一种特殊用途的计算机。当在通用处理器上实施时,计算机程序代码段配置处理器来以创建特定的逻辑电路。该方法也可以可选地至少部分地体现在由用于实施该方法的专用集成电路形成的数字信号处理器中。
上述实施例仅是可能的示例性实施方式,仅对其进行说明以清楚地理解本发明的原理。在不背离本发明的精神和原理的情况下,可对本发明的上述实施例作出多种改变和修改。所有这种修改和变化预期包含在本发明的范围内并受以下权利要求保护。
此外,上面概括了若干实施例的部件,使得本领域普通技术人员可以更好地理解下面的详细说明。本领域普通技术人员应该理解,可以很容易地使用本发明作为基础来设计或更改其他用于达到与这里所介绍实施例相同的目的和/或实现相同优点的工艺和结构。本领域普通技术人员也应该意识到,这种等效构造并不背离本发明的精神和范围,并且在不背离本发明的精神和范围的情况下,可以进行多种变化、替换以及改变。
虽然已经描述了本发明主题的优选的实施例,但是应理解所描述的实施例仅仅用于说明性的并且所附权利要求应赋予等效物的全方位解释。通过熟读本文,本领域普通技术人员容易想到多种变形和改进。

Claims (10)

1.一种光伏器件,包括:
包括顶部电极的平坦的光伏面板;
粘附于所述顶部电极的汇流条;以及
粘附于所述汇流条的光散射结构,所述光散射结构包括被配置为与所述光伏面板的平面成钝角的至少一个反射面以将光反射至所述光伏面板。
2.根据权利要求1所述的光伏器件,其中,所述光散射结构包括粘附于所述汇流条的多个光反射粒子。
3.根据权利要求2所述的光伏器件,其中,所述光反射粒子包括无机材料。
4.根据权利要求3所述的光伏器件,其中,所述光散射结构包括混合有无机粒子的多个有机粒子,所述有机粒子吸收第一波长的光并发射第二波长的光。
5.根据权利要求2所述的光伏器件,其中,所述光反射粒子包括有机材料。
6.根据权利要求5所述的光伏器件,其中,有机粒子吸收第一波长的光并发射第二波长的光。
7.根据权利要求1所述的光伏器件,其中,所述光散射结构包括:粘
附于所述汇流条的粘合剂中的多个光反射粒子。
8.根据权利要求7所述的光伏器件,其中,所述粘合剂包括丁基橡胶。
9.一种制造光伏器件的方法,包括:
将第一导电层施加于衬底;
在所述第一导电层上形成吸收层;
在所述吸收层上形成缓冲层;
在所述缓冲层上形成第二导电层;
将汇流条粘附于所述第二导电层;
将光散射结构粘附于所述汇流条,所述光散射结构包括被配置为与光伏面板的平面成钝角的至少一个反射面以将光线反射至所述光伏面板。
10.一种光伏器件,包括:
包括顶部电极的平坦的光伏面板;
粘附于所述顶部电极的汇流条;以及
粘附于所述汇流条的光散射结构,所述光散射结构包括吸收第一波长的光并发射第二波长的光的多个粒子,所述粒子被配置为将所发射的第二波长的光导向至所述顶部电极上。
CN201310412695.XA 2013-07-08 2013-09-11 利用改进的汇流条区域增强光伏性能 Pending CN104282773A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/936,428 US20150007868A1 (en) 2013-07-08 2013-07-08 Enhanced photovoltaic performance with modified bus bar region
US13/936,428 2013-07-08

Publications (1)

Publication Number Publication Date
CN104282773A true CN104282773A (zh) 2015-01-14

Family

ID=52131989

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310412695.XA Pending CN104282773A (zh) 2013-07-08 2013-09-11 利用改进的汇流条区域增强光伏性能

Country Status (4)

Country Link
US (1) US20150007868A1 (zh)
KR (1) KR20150006768A (zh)
CN (1) CN104282773A (zh)
TW (1) TW201503396A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106663712A (zh) * 2014-08-21 2017-05-10 东洋铝株式会社 互连器用光漫射部件、具备其的太阳能电池用互连器、以及太阳能电池组件

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210017497A (ko) * 2019-08-08 2021-02-17 재단법인대구경북과학기술원 경사형 박막 태양전지
JP1684268S (zh) * 2020-01-10 2021-04-26
CN113644153A (zh) * 2021-08-13 2021-11-12 上海晶澳太阳能科技有限公司 一种光伏组件以及制备工艺

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080236667A1 (en) * 2007-03-09 2008-10-02 Wei-Hung Lo Photovoltaic cell, enhanced spectrum conversion film, preparation of enhanced spectrum conversion film
CN101847671A (zh) * 2009-03-23 2010-09-29 三洋电机株式会社 太阳能电池模块的制造方法
CN202042504U (zh) * 2011-05-04 2011-11-16 上海交大泰阳绿色能源有限公司 增加太阳能组件功率的涂锡带
CN102544174A (zh) * 2012-01-06 2012-07-04 南通美能得太阳能电力科技有限公司 一种增加光能利用率的太阳能电池组件
CN102569442A (zh) * 2010-12-30 2012-07-11 彭洞清 薄膜太阳能电池及其制作方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5428249A (en) * 1992-07-15 1995-06-27 Canon Kabushiki Kaisha Photovoltaic device with improved collector electrode
US20070125415A1 (en) * 2005-12-05 2007-06-07 Massachusetts Institute Of Technology Light capture with patterned solar cell bus wires
WO2009126745A2 (en) * 2008-04-11 2009-10-15 Qualcomm Mems Technologies, Inc. Method for improving pv aesthetics and efficiency

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080236667A1 (en) * 2007-03-09 2008-10-02 Wei-Hung Lo Photovoltaic cell, enhanced spectrum conversion film, preparation of enhanced spectrum conversion film
CN101847671A (zh) * 2009-03-23 2010-09-29 三洋电机株式会社 太阳能电池模块的制造方法
CN102569442A (zh) * 2010-12-30 2012-07-11 彭洞清 薄膜太阳能电池及其制作方法
CN202042504U (zh) * 2011-05-04 2011-11-16 上海交大泰阳绿色能源有限公司 增加太阳能组件功率的涂锡带
CN102544174A (zh) * 2012-01-06 2012-07-04 南通美能得太阳能电力科技有限公司 一种增加光能利用率的太阳能电池组件

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106663712A (zh) * 2014-08-21 2017-05-10 东洋铝株式会社 互连器用光漫射部件、具备其的太阳能电池用互连器、以及太阳能电池组件

Also Published As

Publication number Publication date
KR20150006768A (ko) 2015-01-19
US20150007868A1 (en) 2015-01-08
TW201503396A (zh) 2015-01-16

Similar Documents

Publication Publication Date Title
JP5891375B2 (ja) 光起電力モジュール
CN104282773A (zh) 利用改进的汇流条区域增强光伏性能
US20120273030A1 (en) Solar power generating apparatus
US20100132765A1 (en) Hermetically sealed solar cells
US20100300532A1 (en) Hermetically sealed nonplanar solar cells
JP2007287894A (ja) パターン表示機能付cis系薄膜太陽電池モジュール及びその製造方法
CN104051581A (zh) 太阳能电池激光划线方法
KR20110048730A (ko) 태양전지 및 이의 제조방법
KR20230054910A (ko) 태양 전지의 포일 기반 금속화를 위한 두꺼운 손상 버퍼
JPWO2010087333A1 (ja) 光電変換セル、光電変換モジュールおよび光電変換セルの製造方法
CN203398141U (zh) 太阳能电池模块
US20120031458A1 (en) Solar cell module provided with an edge space
CN102376785A (zh) 具有分布布拉格反射器的薄膜太阳能电池
US20170194525A1 (en) High power solar cell module
JPWO2013140623A1 (ja) 太陽電池モジュール及びその製造方法
KR101241718B1 (ko) 태양전지 모듈 및 이의 제조방법
JP5451781B2 (ja) 光電変換装置およびその製造方法
JP2010067752A (ja) 光起電力装置および光起電力装置の製造方法
US9166086B2 (en) Method for manufacturing solar cell module provided with an edge space
JP2011135027A (ja) 光電変換装置
KR20190072495A (ko) 투광 태양 에너지 전지와 그 제조방법
KR101305682B1 (ko) 태양광 발전 장치 및 이의 제조 방법
KR101283302B1 (ko) 태양전지 및 이의 제조방법
WO2015190047A1 (ja) 太陽電池モジュール
JP5909662B2 (ja) 太陽電池モジュール

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
CB02 Change of applicant information

Address after: Hsinchu, Taiwan, China

Applicant after: Taiwan Semiconductor Manufacturing Co., Ltd.

Address before: Taichung City, Taiwan, China

Applicant before: TSMC Solar Ltd.

COR Change of bibliographic data
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20150114