TW201501376A - Light-emitting-diode (LED) substrate structure having heat/electricity separation capability - Google Patents

Abstract

A light-emitting-diode (LED) substrate structure having heat/electricity separation capability. Wherein, an LED carrier plate having at least an LED die is provided. The bottom of the carrier plate is connected to an eutectic layer, so the heat generated during operations of LED die is dissipated downward through the eutectic layer. A substrate is provided on the LED carrier plate, and the substrate is provided with a first conduction layer connected electrically to the LED carrier plate. As such, the power supply driving the LED die to operate is transferred through the first conduction layer on the substrate to the LED carrier plate, to achieve heat/electricity separation of the carrier plate, and having advantages of electricity conduction and heat dissipation of LED.

Description

Thermoelectric separation of light-emitting diode substrate structure

The invention relates to a substrate structure of a light-emitting diode, in particular to a structure of a thermoelectrically separated light-emitting diode substrate.

With the significant improvement of epitaxial, process and packaging technology, the light-emitting diode (LED) of inorganic materials has surpassed the traditional application range, and has been widely applied to the LCD backlight of mobile phones from the simple indication function. Inside and outside the vehicle, warning lighting, outdoor large billboards, etc.; in the general lighting part, the light-emitting diode is gradually being developed into an important main lighting source by the current auxiliary lighting use.

In general, the recently developed light-emitting diodes are surprisingly high in luminosity and power-saving properties, but they have the disadvantage of high heat generation at the same time, and are extremely high due to poor heat dissipation of electronic components. The temperature causes the phenomenon of "electron migration". This phenomenon is affected by the following factors: First, the intensity of the current: the higher the current intensity, the more prominent the phenomenon of "electron migration". Another factor is the temperature: the high temperature contributes to "electron" The emergence of migration, so how to improve the high heat of the light-emitting diode, and with two other advantages: high luminosity and power-saving properties, making it a new generation of pioneers, is the goal of the various manufacturers.

The heat sink used in the prior art with the light-emitting diode is mostly extruded by aluminum, but the aluminum material has the characteristics of poor heat absorption and fast heat dissipation, so that the high temperature generated by the applied electronic component itself cannot be aluminum. The heat sink absorbs heat quickly, so for electronic components Heat dissipation is quite limited. There is another kind of heat sink made of copper material, which has the characteristics of fast heat absorption. Although this can improve the heat absorption efficiency of the aluminum heat sink, the heat dissipation of the copper heat sink is not as good as that of the aluminum heat sink. Due to the increase in the price of international raw materials, the manufacturing cost of copper heat sinks is higher than that of aluminum heat sinks. The economic benefits of using heat sinks for light-emitting diodes are still not high.

Therefore, how to provide a product that can solve the above problems and balance the conductivity and heat transfer of the light-emitting diode is one of the problems that need to be solved by those skilled in the art.

Therefore, the main purpose of the present invention is to prevent the light-emitting diode from being affected by the phenomenon of "electron migration" and to achieve the best heat dissipation power for heat absorption and heat dissipation in the use of heat dissipation properties, thereby designing a thermoelectric separation light-emitting diode. Body substrate structure.

Another object of the present invention is to provide a thermoelectrically separated light-emitting diode substrate structure by connecting a bottom of a light-emitting diode carrier plate to a eutectic layer to enable thermal energy generated by the operation of the light-emitting diode. It escapes downward through the eutectic layer at its bottom.

A further object of the present invention is to provide a thermoelectrically separated light-emitting diode substrate structure by sheathing a circuit board (or ceramic substrate) on a light-emitting diode carrier board and using the circuit board (or The first conductive layer on the ceramic substrate conducts power to the light emitting diode carrier to provide electrical energy required for the operation of the light emitting diode.

To achieve the above object, the present invention relates to a thermoelectrically separated light emitting diode substrate structure comprising a light emitting diode carrier and a substrate. A bottom of the light emitting diode carrier is connected to the eutectic layer, and the light emitting diode carrier has at least one light emitting diode die, and the at least one light emitting diode die is driven to emit light by a driving power. The substrate is disposed on the LED carrier and has a first conductive layer electrically connected to the LED carrier. Use this to drive The driving power of the illuminating diode illuminating light is conducted to the illuminating diode carrier via the first conductive layer, and the thermal energy generated by the operation of the illuminating diode die is downward through the eutectic layer at the bottom thereof. Dissipate.

According to an embodiment of the invention, the light emitting diode carrier has a second guide The electric layer, and the second conductive layer partially overlaps the first conductive layer, thereby guiding the driving power for driving the light emitting diode to emit light.

According to an embodiment of the invention, wherein the eutectic layer is adhered to a heat sink fin, The thermal energy generated by the operation of the light-emitting diode die is dissipated via the heat dissipation fins.

According to an embodiment of the present invention, wherein the first conductive layer has at least The inner diameter of the through hole is plated with a conductive material, and the driving power for driving the light emitting diode die is transmitted to the substrate via one of the metal fasteners penetrating through the through hole.

It is easier to explain the details of the specific embodiment with the attached drawings. The purpose, technical content, characteristics and effects achieved by the present invention are solved.

10‧‧‧Lighting diode carrier

102‧‧‧Insulation

104‧‧‧Substrate

106‧‧‧eutectic layer

12‧‧‧Light-emitting diode grains

14‧‧‧Second conductive layer

20‧‧‧Substrate

22‧‧‧First conductive layer

24‧‧‧through holes

26‧‧‧ Conductive material

28‧‧‧ openings

30‧‧‧ screws

40‧‧‧ Heat sink fins

1 is a schematic structural view of a light-emitting diode carrier according to an embodiment of the present invention.

2 is a schematic structural view of a substrate according to an embodiment of the present invention.

FIG. 3 is an exploded perspective view of a substrate disposed on a light-emitting diode carrier according to an embodiment of the invention.

FIG. 4 is an exploded perspective view of a substrate locked to a heat dissipation fin according to an embodiment of the invention.

The invention provides a thermoelectric separation light-emitting diode substrate structure, which uses a substrate disposed around a carrier plate of a light-emitting diode to conduct electric power, and the thermal energy generated by the operation of the light-emitting diode passes through the eutectic layer under the carrier plate. It is dissipated downward, thereby achieving the purpose of separating the driving power of the light-emitting diode carrier from the generated heat energy.

Please refer to FIG. 1 , which is a light emitting diode carrier according to an embodiment of the invention. The bottom of the light-emitting diode carrier 10 has a eutectic layer 106, which may be made of a copper-tin alloy.

The eutectic layer 106 has a substrate 104, which may be made of tantalum, ceramic material or glass. Glass, aluminum or copper, etc., has an insulating layer 102 on the substrate 104. The light-emitting diode carrier 10 disclosed in the present invention includes at least the above-described insulating layer 102, substrate 104, and eutectic layer 106 from top to bottom.

As shown in Figure 1, at least one light emitting diode (Light emitting diode, The LED) 12 is disposed on the insulating layer 102, and the LED die 12 can drive the light to be emitted via a driving power.

Please refer to FIG. 2 and FIG. 3 , which are schematic structural diagrams of a substrate according to an embodiment of the present invention, and an exploded view of the substrate disposed on the LED carrier. As shown in FIG. 2 and FIG. 3, the substrate 20 disclosed in the present invention has a hollowed out opening 28 in the center thereof so that the substrate 20 can be sleeved on the above-mentioned light emitting diode through the opening 28. On board 10 (as shown in Figure 3).

According to an embodiment of the invention, the substrate 20 can be a printed circuit board (PCB) or a ceramics substrate.

A first conductive layer 22 is formed on the upper surface of the substrate 20. As shown in FIG. 1 and FIG. 3, since the light-emitting diode carrier 10 is also formed with a second conductive layer 14 corresponding to the first conductive layer 22 on its surface, when the substrate 20 is sleeved by the opening 28 In the light-emitting diode carrier 10 of FIG. 1, the first conductive layer 22 of the substrate 20 is partially overlapped with the second conductive layer 14 of the LED carrier 10, and the substrate 20 is Both of the light-emitting diode carriers 10 are thereby electrically conductive.

In detail, as shown in FIGS. 2 to 3, the substrate 20 has at least a uniform through hole 24 on its surface, and the through hole 24 connecting the first conductive layer 22 is plated with a conductive material 26 in its inner diameter.

In other words, when a through hole 24 plated with a conductive material 26 is provided with a metal lock When the metal lock is made of a conductive material, a power can be conducted to the substrate 20 by the metal lock. Then, the first conductive layer 22 and the second conductive layer 14 are further electrically connected to the LED carrier 10 to drive the LED body on the LED carrier 10. The granule 12 emits light.

Figure 4 is a diagram of a substrate locked to a heat sink fin according to an embodiment of the present invention. Solution diagram. As shown in Fig. 4, the above-described metal fastener of the present invention can be implemented by a screw 30. When the screw 30 is connected to the driving power (for example, the driving power source of the backlight), and the screw 30 passes through the through hole 24 plated with the conductive material 26, the driving power can be sequentially driven by the screw 30, the first conductive The layer 22 is conductive to the second conductive layer 14 and is conducted to the light-emitting diode carrier 10 such that the light-emitting diode die 12 thereon is driven to emit light.

In addition, the screw 30 has a locking effect. As shown in Figure 4, the snail The wire 30 locks the substrate 20 to a heat dissipation fin 40, whereby the light emitting diode carrier 10 can be tightly sandwiched between the substrate 20 and the heat dissipation fins 40.

At this time, since the eutectic layer 106 of the light-emitting diode carrier 10 is adhered to the heat sink fin On the film 40. Therefore, the thermal energy generated by the operation of the LED die 12 on the LED carrier 10 can be dissipated downward through the eutectic layer 106, and finally escape to the outside through the heat dissipation fins 40.

In summary, the light emitting diode substrate structure disclosed in the present invention has thermoelectricity. The advantage of separation: the thermal energy generated by the light-emitting diode grains is transmitted to the light-emitting diode carrier, and then directly led to the heat dissipation fin by the eutectic layer; and the power supply is driven by the circuit board (or ceramic substrate). And the perforated screw on the same is turned on, wherein the screw has the function of locking the substrate structure and the conduction power source disclosed by the invention.

The embodiments described above are merely illustrative of the technical idea and features of the present invention. The purpose of the present invention is to enable those skilled in the art to understand the scope of the present invention and the scope of the invention is not limited thereto, that is, the equivalent of the spirit of the present invention. Modifications or modifications are still intended to be encompassed within the scope of the invention.

10‧‧‧Lighting diode carrier

106‧‧‧eutectic layer

12‧‧‧Light-emitting diode grains

20‧‧‧Substrate

22‧‧‧First conductive layer

24‧‧‧through holes

26‧‧‧ Conductive material

30‧‧‧ screws

40‧‧‧ Heat sink fins

Claims (10)

A light-emitting diode substrate structure comprising: a light-emitting diode carrier plate having a eutectic layer connected to the bottom thereof, the light-emitting diode carrier plate having at least one light-emitting diode die, the at least one light-emitting layer The diode die is driven by a driving power; and a substrate is disposed on the LED carrier, the substrate has a first conductive layer electrically connected to the LED carrier. The driving power is conducted to the light emitting diode carrier via the first conductive layer of the substrate, and the thermal energy generated by the at least one light emitting diode die is dissipated downward through the eutectic layer. The thermocoupled light-emitting diode substrate structure of claim 1, wherein the light-emitting diode carrier has a second conductive layer, and the second conductive layer partially overlaps the first conductive layer to The drive power is turned on. The thermoelectrically separated LED substrate structure of claim 1, wherein the first conductive layer of the substrate further has at least a uniform perforation, and the inner diameter of the through hole is plated with a conductive material, and the driving power system The metal is transferred to the substrate via one of the metal fasteners disposed in the through hole. The thermocoupled light-emitting diode substrate structure of claim 3, wherein the metal lock further locks the substrate to a heat dissipation fin, so that the light-emitting diode carrier is sandwiched between the substrate and the substrate Between heat sink fins. The thermoelectrically separated LED substrate structure of claim 3, wherein the metal fastener is a screw. The thermoelectrically separated light-emitting diode substrate structure of claim 1, wherein the eutectic layer is adhered to a heat dissipation fin, so that heat generated by the at least one light-emitting diode die is discharged through the heat dissipation fin Scattered. The thermoelectrically separated light-emitting diode substrate structure according to claim 1, wherein the eutectic layer is made of a copper-tin alloy. The thermoelectrically separated light-emitting diode substrate structure according to claim 1, wherein the substrate is a circuit board or a ceramic substrate. The thermoelectrically separated light-emitting diode substrate structure of claim 1, wherein the central portion of the substrate The substrate has a hollowed out opening, and the substrate is sleeved on the LED carrier board by the opening. The thermocoupled light-emitting diode substrate structure of claim 1, wherein the light-emitting diode carrier further comprises a substrate and an insulating layer disposed thereon, the substrate being disposed on the eutectic layer The at least one light emitting diode die is disposed on the insulating layer.