TW201446420A - Laser pad conditioning process control - Google Patents
Laser pad conditioning process control Download PDFInfo
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- TW201446420A TW201446420A TW103108421A TW103108421A TW201446420A TW 201446420 A TW201446420 A TW 201446420A TW 103108421 A TW103108421 A TW 103108421A TW 103108421 A TW103108421 A TW 103108421A TW 201446420 A TW201446420 A TW 201446420A
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- polishing pad
- adjusting
- polishing
- processing surface
- adjustment parameter
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/18—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the presence of dressing tools
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
本發明之實施例一般關於用於使用光學調節裝置(例如雷射調節裝置)來調節基板拋光墊之控制方法及裝置。 Embodiments of the present invention generally relate to methods and apparatus for controlling a substrate polishing pad using an optical conditioning device, such as a laser conditioning device.
在基板上之集成電路及其他電子裝置的製造中，導電的、半導電的以及介電材料的多個層係經沉積於基板之特徵側(也就是沉積接收表面)上或自基板之特徵側移除。隨著材料層依序沉積及移除，基板之特徵側可能變得非平面且需要平面化及/或拋光。平面化及拋光係先前沉積的材料係自基板之特徵側移除以形成大致均勻、平面或平整的表面的程序。該等程序在移除不要的表面構形及表面缺陷(例如粗糙的表面、附聚的材料、晶格損傷及刮傷)中是有用的。該等程序在藉由移除多餘的沉積材料來在基板上形成特徵中亦是有用的，該沉積材料係用以填充該等特徵以及用以提供用於隨後的沉積及處理的均勻或平整的表面。 In the fabrication of integrated circuits and other electronic devices on a substrate, multiple layers of conductive, semi-conductive, and dielectric materials are deposited on the feature side of the substrate (ie, the deposition receiving surface) or from the feature side of the substrate. Remove. As the layers of material are deposited and removed sequentially, the feature side of the substrate may become non-planar and require planarization and/or polishing. Planarization and polishing are procedures in which previously deposited material is removed from the feature side of the substrate to form a substantially uniform, planar or flat surface. These procedures are useful in removing unwanted surface topography and surface defects such as rough surfaces, agglomerated materials, lattice damage and scratches. Such procedures are also useful in forming features on a substrate by removing excess deposited material that is used to fill the features and to provide uniform or flattening for subsequent deposition and processing. surface.
在拋光處理期間，與基板特徵側接觸之墊子的拋光表面經歷變形。變形包括拋光表面之平滑化及/或拋光表面之平面中的不均勻的平滑化以及拋光表面中孔隙的堵塞或阻 止，該等孔隙可能減少了墊子適當且有效率地自基板移除材料的能力。需要拋光表面之週期性的調節以跨拋光表面維持一致的粗糙度、孔隙率及/或大致扁平的外形。 During the polishing process, the polishing surface of the mat that is in contact with the feature side of the substrate undergoes deformation. The deformation includes smoothing of the polished surface and/or uneven smoothing in the plane of the polished surface and clogging or blocking of the pores in the polished surface These apertures may reduce the ability of the mat to properly and efficiently remove material from the substrate. Periodic adjustment of the polishing surface is required to maintain consistent roughness, porosity, and/or a generally flat profile across the polished surface.
一個用以調節拋光表面的方法利用研磨調節盤，該研磨調節盤在跨拋光表面的大部分旋轉及/或橫掃時，抵著(urge against)該拋光表面。調節盤的研磨部分(這可為鑽石粒子或其他堅硬材料)一般切進墊子表面，這在拋光表面中形成了溝槽且要不然就粗糙化拋光表面。然而，當控制了向調節盤所施加之旋轉及/或下壓力時，研磨部分可能不均勻地切進拋光表面，這在跨拋光表面的粗糙度上產生了差異。此外，隨著切割動作不容易控制，墊子的壽命可能被縮短。進一步地，這些調節裝置及系統之切割動作有時候在拋光表面中產生大的凹凸體(asperity)。在凹凸體在拋光處理中是有益的同時，該等凹凸體可能在拋光期間掙脫(break loose)，這產生了可能在基板中造成缺陷的殘材。 One method for adjusting the polishing surface utilizes a grinding adjustment disk that erects against the polishing surface as it rotates and/or sweeps across most of the polishing surface. The abrasive portion of the conditioning disc (which may be diamond particles or other hard material) is typically cut into the surface of the mat, which forms a groove in the polishing surface and otherwise roughens the polishing surface. However, when the rotation and/or downforce applied to the dial is controlled, the abrasive portion may not cut evenly into the polishing surface, which causes a difference in the roughness across the polished surface. In addition, the life of the mat may be shortened as the cutting action is not easily controlled. Further, the cutting action of these adjustment devices and systems sometimes produces large asperities in the polished surface. While the reliefs are beneficial in the polishing process, the reliefs may break loose during polishing, which creates a residue that may cause defects in the substrate.
因此，對於改良的墊子調節處理及相關的控制方法存在需求。 Therefore, there is a need for improved mat conditioning and related control methods.
提供了用於調節拋光墊之方法及裝置，該方法及裝置係經利用於拋光處理中。在一個實施例中，提供了用於調節拋光墊之方法，該方法係經利用以拋光基板。方法包括：在光學裝置及拋光墊之間提供相對運動，該拋光墊具有佈置於其上之拋光媒質；以及以雷射光束掃描拋光墊之處理表面以調節處理表面，其中雷射光束具有波長，該波長係實質透 明於拋光媒質，但對於拋光墊是反應性的。 Methods and apparatus for conditioning a polishing pad are provided, the method and apparatus being utilized in a polishing process. In one embodiment, a method for conditioning a polishing pad is provided that is utilized to polish a substrate. The method includes providing relative motion between an optical device and a polishing pad having a polishing medium disposed thereon, and scanning a processing surface of the polishing pad with a laser beam to adjust a processing surface, wherein the laser beam has a wavelength, The wavelength is substantially transparent Clear to the polishing medium, but reactive to the polishing pad.
在另一實施例中，提供了用於拋光基板的方法。方法包括：將基板抵著拋光墊的處理表面，同時在基板及拋光墊之間提供相對移動；向處理表面提供拋光媒質；在相對移動期間，監測處理表面之狀態；以及以光學裝置調節處理表面，該光學裝置包括雷射發射器，該雷射發射器係經調適以發射光束，該光束具有波長範圍，該波長範圍對於拋光媒質是非反應性的，但對於拋光墊是反應性的。 In another embodiment, a method for polishing a substrate is provided. The method includes: abutting a substrate against a processing surface of the polishing pad while providing relative movement between the substrate and the polishing pad; providing a polishing medium to the processing surface; monitoring a state of the processing surface during relative movement; and adjusting the processing surface with the optical device The optical device includes a laser emitter adapted to emit a beam of light having a range of wavelengths that is non-reactive with respect to the polishing medium but reactive to the polishing pad.
在另一實施例中，提供了用於調節拋光墊的方法。方法包括：相對於拋光墊之處理表面，掃描光束，該拋光墊具有佈置於其上的水，該光束具有波長範圍，該波長範圍對於水是非反應性的，但對於拋光墊是反應性的，光束具有波長範圍，該波長對於水係實質非反應性的，但對於拋光墊是反應性的；以及調節拋光墊之拋光表面。 In another embodiment, a method for adjusting a polishing pad is provided. The method includes scanning a light beam relative to a treated surface of the polishing pad, the polishing pad having water disposed thereon, the light beam having a wavelength range that is non-reactive with respect to water, but reactive to the polishing pad, The beam has a range of wavelengths that are substantially non-reactive with respect to the water system, but are reactive to the polishing pad; and adjust the polishing surface of the polishing pad.
100‧‧‧處理站 100‧‧‧Processing Station
102‧‧‧平台 102‧‧‧ platform
104‧‧‧基座 104‧‧‧Base
106‧‧‧驅動馬達 106‧‧‧Drive motor
108‧‧‧拋光墊 108‧‧‧ polishing pad
110‧‧‧主體 110‧‧‧ Subject
112‧‧‧處理表面 112‧‧‧Processing surface
114‧‧‧托架頭 114‧‧‧ bracket head
116‧‧‧基板 116‧‧‧Substrate
118‧‧‧支持構件 118‧‧‧Support components
120‧‧‧驅動系統 120‧‧‧Drive system
122‧‧‧流體施用器 122‧‧‧Fluid applicator
124A‧‧‧第一調節器裝置 124A‧‧‧First regulator device
124B‧‧‧第二調節器裝置 124B‧‧‧Second regulator device
126‧‧‧調節器頭 126‧‧‧Regulator head
128‧‧‧光學裝置 128‧‧‧Optical device
129‧‧‧雷射發射器 129‧‧‧Laser transmitter
130‧‧‧支持構件 130‧‧‧Support components
132‧‧‧支持臂 132‧‧‧Support arm
134‧‧‧致動器 134‧‧‧Actuator
136‧‧‧訊號構件 136‧‧‧Signal components
138‧‧‧訊號產生器 138‧‧‧Signal Generator
140‧‧‧光束 140‧‧‧ Beam
142‧‧‧頂板 142‧‧‧ top board
144‧‧‧包殼 144‧‧‧Encasement
146‧‧‧開口 146‧‧‧ openings
148‧‧‧窗口 148‧‧‧ window
150‧‧‧反射元件 150‧‧‧reflecting elements
152‧‧‧致動器 152‧‧‧Actuator
154‧‧‧光束 154‧‧‧ Beam
200‧‧‧經圖形化的處理表面 200‧‧‧ Graphically processed surface
205‧‧‧痕跡 205‧‧ ‧ traces
208A‧‧‧痕跡 208A‧‧ traces
208B‧‧‧非經調節的區域 208B‧‧‧Unregulated areas
210‧‧‧刮掃圖形 210‧‧‧Scratch graphics
215‧‧‧拋光刮掃圖形 215‧‧‧ polishing sweeping graphics
300A‧‧‧第一溝槽 300A‧‧‧first trench
300B‧‧‧第二溝槽 300B‧‧‧Second trench
400‧‧‧圖表 400‧‧‧ Chart
500‧‧‧監測/反饋系統 500‧‧‧Monitoring/Feedback System
505‧‧‧第一感應器 505‧‧‧First sensor
510‧‧‧光束 510‧‧‧ Beam
515A‧‧‧傳送器 515A‧‧‧transmitter
515B‧‧‧接收器 515B‧‧‧ Receiver
520A‧‧‧第二感應器 520A‧‧‧Second sensor
520B‧‧‧第二感應器 520B‧‧‧Second sensor
525‧‧‧第三感應器 525‧‧‧ third sensor
530‧‧‧墊子耦合構件 530‧‧‧Mats coupling member
535‧‧‧感應器裝置 535‧‧‧ sensor device
540‧‧‧第四感應器 540‧‧‧fourth sensor
545‧‧‧窗口 545‧‧‧ window
600‧‧‧拋光墊 600‧‧‧ polishing pad
605‧‧‧經圖形化的處理表面 605‧‧‧ Graphically processed surface
610‧‧‧痕跡 610‧‧ traces
615A‧‧‧弧線 615A‧‧‧Arc
615B‧‧‧弧線 615B‧‧‧Arc
700A‧‧‧痕跡陣列 700A‧‧‧ Trace array
700B‧‧‧痕跡陣列 700B‧‧‧ Trace array
700C‧‧‧痕跡陣列 700C‧‧‧ Trace array
705‧‧‧痕跡 705‧‧ traces
710A‧‧‧間隔 710A‧‧‧ interval
710B‧‧‧間隔 710B‧‧‧ interval
715‧‧‧鏈 715‧‧‧ chain
800A‧‧‧痕跡陣列 800A‧‧‧ Trace array
800B‧‧‧痕跡陣列 800B‧‧‧ Trace array
800C‧‧‧痕跡陣列 800C‧‧‧ Trace array
805‧‧‧痕跡 805‧‧ traces
810A‧‧‧間隔 810A‧‧‧ interval
810B‧‧‧間隔 810B‧‧‧ interval
810C‧‧‧間隔 810C‧‧‧ interval
905A‧‧‧痕跡 905A‧‧ traces
905B‧‧‧痕跡 905B‧‧ traces
905C‧‧‧痕跡 905C‧‧‧ traces
905D‧‧‧痕跡 905D‧‧‧ traces
910‧‧‧溝槽 910‧‧‧ trench
1000‧‧‧拋光墊 1000‧‧‧ polishing pad
1005A‧‧‧經圖形化的處理表面 1005A‧‧‧ Graphically processed surface
1005B‧‧‧經圖形化的處理表面 1005B‧‧‧ Graphically processed surface
1010A‧‧‧痕跡 1010A‧‧ traces
1010B‧‧‧痕跡 1010B‧‧ traces
1100‧‧‧拋光墊 1100‧‧‧ polishing pad
使得藉由參照實施例(其中之某些係繪示於隨附的圖示中)，可具有可詳細了解本發明以上記載特徵的方式、本發明更特定的描述(以上所簡要概述的)。應注意的是，然而，所附圖示僅繪示此發明之一般實施例且因此並不視為限制此發明之範圍，因為該發明可接納其他等效實施例。 The manner in which the above-described features of the present invention can be understood in detail, and the more detailed description of the invention, which is briefly described above, may be made by reference to the accompanying drawings, which are illustrated in the accompanying drawings. It is to be understood that the appended claims are intended to
圖1為處理站的一個實施例之局部剖視圖，該處理站係經配置以執行拋光處理。 1 is a partial cross-sectional view of one embodiment of a processing station configured to perform a polishing process.
圖2為圖1之處理站的俯視圖。 2 is a top plan view of the processing station of FIG. 1.
圖3為拋光墊的部分之剖視圖。 Figure 3 is a cross-sectional view of a portion of the polishing pad.
圖4為圖示對於光的各種波長之吸收係數的圖表。 4 is a graph illustrating absorption coefficients for various wavelengths of light.
圖5為圖1處理站之局部剖視圖，圖示監控/反饋系統。 Figure 5 is a partial cross-sectional view of the processing station of Figure 1, illustrating a monitoring/feedback system.
圖6為拋光墊的俯視圖，圖示經圖形化的處理表面之另一實施例。 Figure 6 is a top plan view of a polishing pad illustrating another embodiment of a patterned processing surface.
圖7A-7C為可形成於拋光墊上之標記陣列的示意俯視圖。 7A-7C are schematic top views of an array of indicia that can be formed on a polishing pad.
圖8A-8C為可形成於拋光墊上之標記陣列之示意剖視圖。 8A-8C are schematic cross-sectional views of an array of indicia that can be formed on a polishing pad.
圖9A-9D為可形成於拋光墊中或拋光墊上標記的各種實施例之示意俯視圖。 9A-9D are schematic top views of various embodiments of indicia that may be formed in or on a polishing pad.
圖10A及10B為拋光墊的示意俯視圖，圖示經圖形化的處理表面之部分之實施例。 10A and 10B are schematic top views of a polishing pad illustrating an embodiment of a portion of a patterned processing surface.
為了促進了解，(於可能處)已使用了一致的參考標號以指定普遍用於該等圖式之一致的構件。可以預期的是，於一個實施例中所揭露的構件可有益地利用在其他實施例上而不用特別記載。 To promote understanding, consistent reference numerals have been used (where possible) to designate consistent components that are commonly used in the drawings. It is contemplated that the components disclosed in one embodiment may be beneficially utilized in other embodiments without particular reference.
圖1為處理站100的一個實施例之局部剖視圖，該處理站100係經配置以執行拋光處理(例如化學機械拋光(CMP)處理或電化學機械拋光(ECMP)處理)。處理站100可為獨立式單元或較大處理系統之部分。雖然可利用其他的拋光系統(包括來自其他製造商的那些拋光系統)，可同處理站100利用的較大處理系統的示例包括可從應用材料公司 (Applied Materials,Inc.)(位於加州聖塔克拉拉)取得之REFLEXION®、REFLEXION® GT、REFLEXION® LK、REFLEXION® LK ECMPTM、MIRRA MESA®拋光系統。其他拋光模組(包括使用其他類型處理墊、帶、可轉位網型墊(indexable web-type pad)或其組合的那些拋光模組，且包括相對於拋光表面以旋轉、直線的或其他平面運動移動基板的那些拋光模組)亦可經調適以自本文中所述之實施例受益。 1 is a partial cross-sectional view of one embodiment of a processing station 100 configured to perform a polishing process (eg, a chemical mechanical polishing (CMP) process or an electrochemical mechanical polishing (ECMP) process). Processing station 100 can be part of a stand-alone unit or a larger processing system. While other polishing systems (including those from other manufacturers) may be utilized, examples of larger processing systems that may be utilized with processing station 100 include available from Applied Materials, Inc. (located in Santa, California). Clara) REFLEXION ® , REFLEXION ® GT, REFLEXION ® LK, REFLEXION ® LK ECMP TM , MIRRA MESA ® polishing systems. Other polishing modules (including those using other types of processing pads, tapes, indexable web-type pads, or combinations thereof, and including rotating, linear, or other planes relative to the polishing surface) Those polishing modules that move the substrate can also be adapted to benefit from the embodiments described herein.
處理站100包括平台102，該平台102係可旋轉地支持於基座104上。平台102係可操作地耦合至驅動馬達106，該驅動馬達106係經調適以在旋轉軸A周圍旋轉平台102。平台102支持拋光墊108，該拋光墊108具有主體110。拋光墊108的主體110可為市售墊材(例如一般在CMP處理中利用的基於聚合物的墊材)或其他適於實施本發明的拋光製品。聚合物材料可為聚氨酯、聚碳酸酯、含氟聚合物、PTFE、PTFA、聚苯硫醚(PPS)或其組合。主體110可進一步包括開孔或閉孔的發泡聚合物、彈性體、毛氈、浸漬毛氈、塑料及與處理化學相容的類似材料。在主體110可為電介質的同時，可預期的是，具有至少部分地導電的拋光表面的拋光墊亦可自本發明受益。 The processing station 100 includes a platform 102 that is rotatably supported on a base 104. The platform 102 is operatively coupled to a drive motor 106 that is adapted to rotate the platform 102 about the axis of rotation A. The platform 102 supports a polishing pad 108 having a body 110. The body 110 of the polishing pad 108 can be a commercially available mat (such as a polymer-based mat typically utilized in CMP processing) or other polishing articles suitable for practicing the present invention. The polymeric material can be polyurethane, polycarbonate, fluoropolymer, PTFE, PTFA, polyphenylene sulfide (PPS), or combinations thereof. The body 110 can further comprise an apertured or closed cell foamed polymer, elastomer, felt, impregnated felt, plastic, and similar materials that are compatible with the processing chemistry. While the body 110 can be a dielectric, it is contemplated that a polishing pad having an at least partially electrically conductive polishing surface can also benefit from the present invention.
拋光墊108包括處理表面112，該處理表面112包括可包括微觀孔隙結構的絨毛。絨毛及/或孔隙結構自基板特徵側導致材料移除。處理表面112的屬性(例如拋光化合物滯留、拋光或移除活性及材料與流體輸送)影響移除率。為了促進自基板最佳的材料移除，處理表面112必須週期性地 調節以粗糙化及/或完全地及均勻地開啟絨毛或孔隙結構。當以此方式調節處理表面112時，處理表面112提供均勻及穩定的移除率。經粗糙化的處理表面112藉由強化墊子表面濕潤性及散佈拋光化合物來促進移除(例如自拋光化合物供應的研磨粒子)。 Polishing pad 108 includes a processing surface 112 that includes fluff that can include a microscopic pore structure. The fluff and/or pore structure results in material removal from the feature side of the substrate. The properties of the treatment surface 112 (e.g., polishing compound retention, polishing or removal activity, and material and fluid transport) affect the removal rate. In order to facilitate optimal material removal from the substrate, the processing surface 112 must be periodically The adjustment is to roughen and/or completely and evenly open the fluff or pore structure. When the treatment surface 112 is adjusted in this manner, the treatment surface 112 provides a uniform and stable removal rate. The roughened treated surface 112 facilitates removal by enhancing the surface wettability of the mat and spreading the polishing compound (eg, abrasive particles supplied from the polishing compound).
托架頭114係佈置(dispose)於拋光墊108之處理表面112之上。托架頭114固定(retain)基板116且在處理期間可控制地將基板116(沿著Z軸)抵著拋光墊108的處理表面112。托架頭114係安裝至支持構件118，該支持構件118支持托架頭114且相對於拋光墊108促進托架頭114的移動。支持構件118可以將托架頭114懸吊在拋光墊108之上的方式耦合至基座104或安裝於處理站100之上。在一個實施例中，支持構件118為安裝於處理站100之上的圓形軌道。在另一實施例中，支持構件118為耦合至中央支持構件(未圖示)的支持臂，該中央支持構件可相對於處理站100旋轉支持構件118。 The carrier head 114 is disposed above the processing surface 112 of the polishing pad 108. The carriage head 114 retains the substrate 116 and controllably urges the substrate 116 (along the Z-axis) against the processing surface 112 of the polishing pad 108 during processing. The carriage head 114 is mounted to a support member 118 that supports the carriage head 114 and facilitates movement of the carriage head 114 relative to the polishing pad 108. The support member 118 can be coupled to the base 104 or mounted on the processing station 100 in a manner that suspends the carriage head 114 over the polishing pad 108. In one embodiment, the support member 118 is a circular track mounted above the processing station 100. In another embodiment, the support member 118 is a support arm coupled to a central support member (not shown) that can rotate the support member 118 relative to the processing station 100.
托架頭114係耦合至驅動系統120，該驅動系統120至少提供托架頭114在旋轉軸B周圍的旋轉移動。驅動系統120可另外經配置以相對於拋光墊108橫向地(X及/或Y軸)沿支持構件118移動托架頭114。在一個實施例中，除了橫向移動，驅動系統120相對於拋光墊108垂直地(Z軸)移動托架頭114。例如，除了相對於拋光墊108提供基板116旋轉及/或橫向移動，驅動系統120可經利用以將基板116抵著拋光墊108。托架頭114的橫向移動可為直線的，或為弧線(arcing) 的或刮掃(sweeping)的運動(在圖2中圖示為215)。 The carriage head 114 is coupled to a drive system 120 that provides at least rotational movement of the carriage head 114 about the axis of rotation B. The drive system 120 can additionally be configured to move the carriage head 114 along the support member 118 laterally (X and/or Y-axis) relative to the polishing pad 108. In one embodiment, in addition to lateral movement, drive system 120 moves carriage head 114 vertically (Z-axis) relative to polishing pad 108. For example, in addition to providing rotation and/or lateral movement of the substrate 116 relative to the polishing pad 108, the drive system 120 can be utilized to abut the substrate 116 against the polishing pad 108. The lateral movement of the carriage head 114 can be straight or arcing Or sweeping motion (illustrated as 215 in Figure 2).
流體施用器122係圖示安置於拋光墊108之處理表面112之上。流體施用器122係經調適以向拋光墊108範圍的至少一部分提供拋光媒質(例如拋光流體或拋光化合物)。拋光流體或拋光化合物可為化學溶液、研磨液(slurry)、清洗溶液或其組合，主要包含水(例如約70%至99%(或更多)去離子水(de-ionized water,DIW)的成分)。例如，媒質可為含研磨料或不含研磨料的拋光化合物，該拋光化合物係經調適以助於自基板116的特徵側移除材料。還原劑及氧化劑(例如過氧化氫)亦可加至媒質。或者，媒質可為清洗劑(例如DIW)，該清洗劑係用以自拋光墊108的拋光材料清洗或沖洗掉拋光副產物。 Fluid applicator 122 is illustrated disposed over processing surface 112 of polishing pad 108. The fluid applicator 122 is adapted to provide a polishing medium (eg, a polishing fluid or a polishing compound) to at least a portion of the polishing pad 108 range. The polishing fluid or polishing compound can be a chemical solution, a slurry, a cleaning solution, or a combination thereof, and mainly contains water (eg, about 70% to 99% (or more) de-ionized water (DIW). ingredient). For example, the medium can be a polishing compound containing abrasive or no abrasive, the polishing compound being adapted to facilitate removal of material from the feature side of the substrate 116. A reducing agent and an oxidizing agent such as hydrogen peroxide may also be added to the medium. Alternatively, the medium can be a cleaning agent (e.g., DIW) that is used to clean or rinse away polishing by-products from the polishing material of polishing pad 108.
圖1亦圖示調節裝置的兩個不同的實施例(圖示為第一調節器裝置124A及第二調節器裝置124B)。可同處理站100利用第一調節器裝置124A及第二調節器裝置124B中之一者或兩者。 Figure 1 also illustrates two different embodiments of the adjustment device (illustrated as first regulator device 124A and second regulator device 124B). One or both of the first regulator device 124A and the second regulator device 124B can be utilized with the processing station 100.
第一調節器裝置124A一般包括調節氣頭126，該調節氣頭126耦合至處理站100的基座104。調節器頭126可包括光學裝置128。光學裝置128可為雷射發射器、透鏡、反射鏡或其他適合用於朝拋光墊108的處理表面112發射、傳送或引導光束140的裝置。在一個實施例中，光學裝置128包括雷射發射器129。雷射發射器129可替代性地自第一調節器裝置124A遠端地安置。利用此架構，光學裝置128包括光學器件(optics)，該光學器件對於向拋光墊108的處理表面112 供應光束140是必要的。調節器頭126係藉由支持臂132來耦合至支持構件130。支持構件130被佈置為通過處理站100的基座104。在基座104及支持構件130之間提供軸承(未圖示)以促進支持構件130相對於基座104在旋轉軸C周圍的旋轉。致動器134係耦合於基座104及支持構件130之間以控制支持構件130在旋轉軸C周圍的旋轉方向以允許調節器頭120以弧線或刮掃的運動在拋光墊108的處理表面112之上移動。 The first regulator device 124A generally includes an adjustment gas head 126 that is coupled to the susceptor 104 of the processing station 100. The adjuster head 126 can include an optical device 128. Optical device 128 can be a laser emitter, lens, mirror, or other device suitable for transmitting, transmitting, or directing beam 140 toward processing surface 112 of polishing pad 108. In one embodiment, optical device 128 includes a laser emitter 129. The laser emitter 129 can alternatively be remotely disposed from the first regulator device 124A. With this architecture, optical device 128 includes optics for processing surface 112 to polishing pad 108 Supply beam 140 is necessary. The regulator head 126 is coupled to the support member 130 by a support arm 132. The support member 130 is arranged to pass through the base 104 of the processing station 100. A bearing (not shown) is provided between the base 104 and the support member 130 to facilitate rotation of the support member 130 relative to the base 104 about the axis of rotation C. An actuator 134 is coupled between the base 104 and the support member 130 to control the direction of rotation of the support member 130 about the axis of rotation C to allow the adjuster head 120 to be in an arc or sweep motion at the processing surface 112 of the polishing pad 108. Move on top.
在一個實施例中，係利用雷射發射器129發射光束140，該光束140衝擊拋光墊108以調節處理表面112。例如，可利用光束140以在拋光墊108的處理表面112中或在拋光墊108的處理表面112上形成溝槽圖形。光束140可為主光束或者光束140可為自反射元件(未圖示)發射的次光束，該反射元件可為光學裝置128的部分。在拋光墊108的處理表面112中或在拋光墊108的處理表面112上所提供的溝槽圖形可在具有相對扁平或平面的處理表面的拋光墊上形成，且亦可在具有非平面處理表面的拋光墊上形成。例如，可利用光束140及/或154以調節具有非平面處理表面的拋光墊而不用扁平化該處理表面。 In one embodiment, a beam 140 is emitted using a laser emitter 129 that impacts the polishing pad 108 to condition the processing surface 112. For example, beam 140 can be utilized to form a groove pattern in processing surface 112 of polishing pad 108 or on processing surface 112 of polishing pad 108. Beam 140 may be a primary beam or beam 140 may be a secondary beam emitted from a reflective element (not shown), which may be part of optical device 128. The groove pattern provided in the processing surface 112 of the polishing pad 108 or on the processing surface 112 of the polishing pad 108 may be formed on a polishing pad having a relatively flat or planar processing surface, and may also be on a non-planar treated surface. Formed on the polishing pad. For example, beams 140 and/or 154 can be utilized to condition a polishing pad having a non-planar treated surface without flattening the treated surface.
支持構件130可收容驅動元件以相對於拋光墊108之處理表面112的平面選擇性地控制調節器頭126及光學裝置128的其中一者的垂直位置(以Z軸)及/或角度α。支持構件130及/或支持臂132亦可包含訊號構件136，該訊號構件136係耦合於訊號產生器138及光學裝置128之間。訊號 產生器138可為可控制的電源且訊號構件136可為電線或光纖。致動器134亦可(以Z方向)提供支持構件130的垂直安置以相對於拋光墊108提供調節器頭126的高度控制。 The support member 130 can receive the drive member to selectively control the vertical position (in the Z-axis) and/or the angle a of the adjuster head 126 and the optical device 128 relative to the plane of the processing surface 112 of the polishing pad 108. The support member 130 and/or the support arm 132 can also include a signal member 136 coupled between the signal generator 138 and the optical device 128. Signal Generator 138 can be a controllable power source and signal component 136 can be a wire or fiber. The actuator 134 can also provide a vertical placement of the support member 130 (in the Z direction) to provide height control of the regulator head 126 relative to the polishing pad 108.
在某些實施例中，致動器134亦可用以提供拋光墊108及調節器頭126之間的接觸以及將調節器頭126用可控制的下壓力抵著拋光墊108的處理表面112。在一個實施例(未圖示)中，調節器頭126可包括殼體，該殼體在調節期間接觸拋光墊108。殼體可耦合至真空裝置(未圖示)及/或流體源(未圖示)以促進材料的移除，該材料係在調節期間自拋光墊108的處理表面112釋放。 In some embodiments, the actuator 134 can also be used to provide contact between the polishing pad 108 and the regulator head 126 and to urge the regulator head 126 against the processing surface 112 of the polishing pad 108 with a controlled downforce. In one embodiment (not shown), the adjuster head 126 can include a housing that contacts the polishing pad 108 during adjustment. The housing may be coupled to a vacuum device (not shown) and/or a fluid source (not shown) to facilitate removal of material that is released from the processing surface 112 of the polishing pad 108 during conditioning.
第二調節器裝置124B係安置於拋光墊108的處理表面112之上，並且，在一個實施例中，該第二調節器裝置124B係由包殼144的頂板(ceiling)142所支持，該包殼144至少部分地自周圍環境隔離處理站100。第二調節器裝置124B包括光學裝置128，該光學裝置128可包括雷射發射器129及/或光學器件，該雷射發射器129及/或光學器件對於向佈置於平台102上之拋光墊108的處理表面112供應由雷射發射器129所產生的次光束154是必要的。在一個實施例中，光學裝置128係經安置以引導次光束154通過開口146，該開口146係形成為通過頂板142。開口146可包括窗口148，該窗口148對於次光束154是透明的。可利用窗口148以防止任何拋光殘材或氣體離開包殼144。在此實施例中，光學裝置128包括雷射發射器129且可可選地包括反射元件150以相對於拋光墊108之處理表面112掃描次光束154以調節拋光墊108的 處理表面112。反射元件150可為反射鏡，例如掃描反射鏡或掃描振鏡反射鏡(galvo-mirror)，該掃描反射鏡或掃描振鏡反射鏡係耦合至致動器152以在軸D周圍(X軸周圍)移動反射元件150。在另一實施例中，反射元件150可經配置以在Y軸周圍旋轉(以改變相對於拋光墊108的處理表面112的角度α)而作為在軸D周圍移動的替代方案(或者除了在軸D周圍移動之外，反射元件150可經配置以在Y軸周圍旋轉)。 The second regulator device 124B is disposed over the processing surface 112 of the polishing pad 108, and, in one embodiment, the second regulator device 124B is supported by a ceiling 142 of the cladding 144, the package The shell 144 at least partially isolates the processing station 100 from the surrounding environment. The second regulator device 124B includes an optical device 128 that can include a laser emitter 129 and/or optics for the polishing pad 108 disposed on the platform 102 It is necessary that the processing surface 112 supply the secondary beam 154 generated by the laser emitter 129. In one embodiment, the optical device 128 is positioned to direct the secondary beam 154 through the opening 146 that is formed through the top plate 142. The opening 146 can include a window 148 that is transparent to the secondary beam 154. Window 148 may be utilized to prevent any polishing residue or gas from leaving cladding 144. In this embodiment, the optical device 128 includes a laser emitter 129 and can optionally include a reflective element 150 to scan the secondary beam 154 relative to the processing surface 112 of the polishing pad 108 to adjust the polishing pad 108. The surface 112 is treated. The reflective element 150 can be a mirror, such as a scanning mirror or a galvo-mirror, which is coupled to the actuator 152 around the axis D (around the X-axis) Moving the reflective element 150. In another embodiment, the reflective element 150 can be configured to rotate about the Y-axis (to change the angle a relative to the processing surface 112 of the polishing pad 108) as an alternative to moving around the axis D (or in addition to the axis) In addition to moving around D, reflective element 150 can be configured to rotate about the Y-axis.
在一個實施例中，雷射發射器129係經調適以將光束140發射為主光束，該主光束係引導為通過窗口148而朝向拋光墊108的處理表面112以(例如，藉由在拋光墊108的處理表面112中形成溝槽圖形或在拋光墊108的處理表面112上形成溝槽圖形)調節拋光墊108的處理表面112。在另一實施例中，雷射發射器129朝反射元件150發射光束140以提供次光束154，該次光束154衝擊拋光墊108以(例如，藉由在拋光墊108的處理表面112中形成溝槽圖形或在拋光墊108的處理表面112上形成溝槽圖形)調節拋光墊108的處理表面112。 In one embodiment, the laser emitter 129 is adapted to emit the beam 140 as a main beam that is directed through the window 148 toward the processing surface 112 of the polishing pad 108 (eg, by polishing pad) A groove pattern is formed in the processing surface 112 of 108 or a groove pattern is formed on the processing surface 112 of the polishing pad 108. The processing surface 112 of the polishing pad 108 is adjusted. In another embodiment, the laser emitter 129 emits a beam 140 toward the reflective element 150 to provide a secondary beam 154 that impacts the polishing pad 108 (eg, by forming a trench in the processing surface 112 of the polishing pad 108). The groove pattern or groove pattern is formed on the processing surface 112 of the polishing pad 108) to adjust the processing surface 112 of the polishing pad 108.
圖2為圖1之處理站100的俯視圖，圖示在拋光墊108上經圖形化的處理表面200的一個實施例。經圖形化的處理表面200在處理期間促進自基板116移除材料及/或流體運輸。經圖形化的處理表面200可使用圖1之第一調節器裝置124A及/或第二調節器裝置124B來形成。經圖形化的處理表面200可包括溝槽或通道(以下稱為痕跡205，係形成於主體110中而至所需的深度)。 2 is a top plan view of the processing station 100 of FIG. 1 illustrating one embodiment of a patterned processing surface 200 on a polishing pad 108. The patterned processing surface 200 facilitates removal of material and/or fluid transport from the substrate 116 during processing. The patterned processing surface 200 can be formed using the first regulator device 124A and/or the second regulator device 124B of FIG. The patterned processing surface 200 can include grooves or channels (hereinafter referred to as traces 205 that are formed in the body 110 to a desired depth).
痕跡205之各者可包括流體留存結構，該流體留存結構係藉由圖1之第一調節器裝置124A及/或第二調節器裝置124B的光學裝置128形成於拋光墊108的主體110中。痕跡205在拋光墊108上可為直線的或曲線的、之字形(zig-zagged)以及可具有徑向、網格、螺旋形或圓形的方向。痕跡205可為相交的或非相交的。替代性地或附加地，拋光墊108的處理表面112可經壓花(emboss)。 Each of the traces 205 can include a fluid retention structure formed in the body 110 of the polishing pad 108 by the optical device 128 of the first regulator device 124A and/or the second regulator device 124B of FIG. The traces 205 may be linear or curved, zig-zagged on the polishing pad 108 and may have a radial, mesh, spiral or circular orientation. Traces 205 can be intersecting or non-intersecting. Alternatively or additionally, the treatment surface 112 of the polishing pad 108 may be embossed.
在此實施例中，經圖形化的處理表面200包括複數個痕跡205，該等痕跡205可為實質同心的。在某些實施例中，痕跡205可為間歇的以形成離散的痕跡208A，該離散的痕跡208A係藉由拋光墊108的處理表面112之非經調節的區域208B來分隔(例如不藉由(圖1中所圖示的)光學裝置128來調節的拋光墊108的處理表面112的區域)。痕跡208A之各者可為可包括流體留存結構的溝槽、通道或孔洞，該流體留存結構係藉由第一調節器裝置124A及/或第二調節器裝置124B來形成於拋光墊108的主體110中。痕跡208A在拋光墊108上亦可為直線的或曲線的、之字形的以即可具有徑向、網格、螺旋形或圓形的方向。圖2亦圖示基板116，該基板116係在拋光期間(部分地以假想物(phantom))佈置於拋光墊108的處理表面112上以在經圖形化的處理表面200上指示基板116之拋光刮掃圖形215的一個實施例實施例。 In this embodiment, the patterned processing surface 200 includes a plurality of traces 205 that may be substantially concentric. In some embodiments, the traces 205 can be intermittent to form discrete traces 208A that are separated by a non-conditioned region 208B of the processing surface 112 of the polishing pad 108 (eg, without The optical device 128 illustrated in Figure 1 adjusts the area of the processing surface 112 of the polishing pad 108). Each of the traces 208A can be a trench, channel or hole that can include a fluid retention structure formed on the body of the polishing pad 108 by the first regulator device 124A and/or the second regulator device 124B. 110. Trace 208A may also be linear or curved, zigzag on polishing pad 108 to have a radial, grid, spiral or circular orientation. 2 also illustrates a substrate 116 that is disposed on the processing surface 112 of the polishing pad 108 during polishing (partially in a phantom) to indicate polishing of the substrate 116 on the patterned processing surface 200. One embodiment embodiment of the sweep pattern 215.
為了提供自(圖1中所圖示的)光學裝置128朝拋光墊108的處理表面112引導的連續的或間歇的光束(也就是圖1中所圖示的140及/或154)，痕跡205及/或痕跡208A 之各者可藉由(在圖1中所圖示的)訊號產生器138之連續的或間歇的脈衝來形成。如圖2中所示，痕跡208A可在拋光墊108的處理表面112中定義孔洞陣列或短的、直線的或曲線的通道。 In order to provide a continuous or intermittent beam of light (i.e., 140 and/or 154 as illustrated in FIG. 1) directed from the optical device 128 (illustrated in FIG. 1) toward the processing surface 112 of the polishing pad 108, traces 205 And/or trace 208A Each of these can be formed by a continuous or intermittent pulse of signal generator 138 (illustrated in Figure 1). As shown in FIG. 2, traces 208A may define an array of holes or short, linear or curved channels in the processing surface 112 of the polishing pad 108.
在調節期間(可在拋光的同時執行調節，或在拋光處理之間執行調節)，拋光墊108可以約0.5的每分鐘轉數(revolution per minute,rpm)至約122rpm旋轉，同時在拋光墊108的處理表面112上形成痕跡及/或溝槽圖形。在拋光墊108的處理表面112上之痕跡205及/或痕跡208A的圖形可包括約50微米(μm)至約1000μm的間距。在一個實施例中，在拋光墊的處理表面112中所形成的痕跡205及/或痕跡208A的至少一部份可包括約50μm至約500μm的寬度。在拋光墊108的處理表面112中所形成的痕跡205及/或痕跡208A可包括約5μm至約250μm的深度(例如約25μm至約112μm)。在拋光墊108的處理表面112中所形成的痕跡205及/或痕跡208A的寬度及/或深度度可在拋光墊108的整個壽命時間(lifetime)期間使用光學裝置128來維持。例如，可使用光學裝置128以在拋光處理期間(或在拋光處理之間)再生痕跡205及/或痕跡208A的寬度及/或深度。在一個實施例中，光學裝置128係用以在拋光墊108上拋光的各基板116間(例如在拋光第一基板之後及在拋光第二基板之前)再生痕跡205及/或痕跡208A的寬度及/或深度。在另一實施例中，光學裝置128係用以再生痕跡205及/或208A的寬度及/或深度，根據需要，其可隨後於在多於一個基板116(例如兩個或更多個 基板)上所執行的拋光處理。 During conditioning (the adjustment can be performed while polishing, or between polishing processes), the polishing pad 108 can be rotated from about revolutions per minute (rpm) to about 122 rpm while polishing pad 108 Traces and/or groove patterns are formed on the processing surface 112. The pattern of traces 205 and/or traces 208A on the treated surface 112 of the polishing pad 108 can include a pitch of from about 50 micrometers (μm) to about 1000 μm. In one embodiment, at least a portion of the traces 205 and/or traces 208A formed in the processing surface 112 of the polishing pad can include a width of from about 50 [mu]m to about 500 [mu]m. Traces 205 and/or traces 208A formed in the processing surface 112 of the polishing pad 108 can include a depth of from about 5 [mu]m to about 250 [mu]m (eg, from about 25 [mu]m to about 112 [mu]m). The width and/or depth of the traces 205 and/or traces 208A formed in the treated surface 112 of the polishing pad 108 may be maintained using optical device 128 throughout the life of the polishing pad 108. For example, optical device 128 can be used to reproduce the width and/or depth of trace 205 and/or trace 208A during the polishing process (or between polishing processes). In one embodiment, the optical device 128 is configured to reproduce the width of the traces 205 and/or traces 208A between the substrates 116 polished on the polishing pad 108 (eg, after polishing the first substrate and before polishing the second substrate). / or depth. In another embodiment, optical device 128 is used to reproduce the width and/or depth of traces 205 and/or 208A, which may then be on more than one substrate 116 (eg, two or more, as desired) Polishing process performed on the substrate).
在第一調節器裝置124A之操作的一個實施例中，為了橫跨拋光墊108的處理表面112以刮掃圖形210在支持臂132上(同佈置在調節器頭126中之光學裝置128)移動調節器頭126，支持構件130可為可旋轉的。在一個方面中，係同來自第一調節器裝置124光學裝置128的光能之應用及/或刮掃圖形210結合來利用拋光墊108在處理期間的旋轉移動以在拋光墊108的處理表面112上形成痕跡205及/或痕跡208A的圖形。在另一方面中，係同來自第二調節器裝置124B之光學裝置128之光能應用結合來利用拋光墊108在處理期間的旋轉移動。 In one embodiment of the operation of the first regulator device 124A, in order to traverse the processing surface 112 of the polishing pad 108 with the wiping pattern 210 on the support arm 132 (the optical device 128 disposed in the regulator head 126) The adjuster head 126, the support member 130 can be rotatable. In one aspect, the application of light energy from the optical device 128 of the first regulator device 124 and/or the wipe pattern 210 are utilized in conjunction with rotational movement of the polishing pad 108 during processing to the processing surface 112 of the polishing pad 108. A pattern of traces 205 and/or traces 208A is formed thereon. In another aspect, the optical energy application from the optical device 128 from the second regulator device 124B is utilized in conjunction with the rotational movement of the polishing pad 108 during processing.
圖3為拋光墊108之部分的剖視圖，圖示了在處理表面112中經分級(graded)的溝槽圖形，該經分級的溝槽圖形係由第一調節器裝置124A及第二調節器裝置124B中之一者或兩者(皆示於圖1中)所提供。經分級的溝槽圖形包括第一溝槽300A及第二溝槽300B，該第一溝槽300A及第二溝槽300B係藉由光學裝置128在主體100中以非均勻的深度來形成。例如，當光學裝置128為雷射裝置時，功率可在低功率設定及高功率設定之間脈衝化，該低功率設定係用來以第一、較淺的深度形成第一溝槽300A，該高功率設定係用來以第二、較深的深度形成第二溝槽300B。第一溝槽300A及第二溝槽300B在處理表面112中可形成為連續的溝槽(例如圖2中所示之痕跡205)。雖未圖示，第一溝槽300A及第二溝槽300B可以陣列來形成(例如圖2中所示之痕跡208A)。 3 is a cross-sectional view of a portion of polishing pad 108 illustrating a graduated groove pattern in processing surface 112 that is defined by first regulator device 124A and second regulator device One or both of 124B (both shown in Figure 1) are provided. The graded trench pattern includes a first trench 300A and a second trench 300B formed by the optical device 128 at a non-uniform depth in the body 100. For example, when the optical device 128 is a laser device, power can be pulsed between a low power setting and a high power setting, the low power setting being used to form the first trench 300A at a first, shallower depth, The high power setting is used to form the second trench 300B at a second, deeper depth. The first trench 300A and the second trench 300B may be formed as continuous trenches (eg, traces 205 shown in FIG. 2) in the processing surface 112. Although not shown, the first trench 300A and the second trench 300B may be formed in an array (eg, the trace 208A shown in FIG. 2).
在拋光墊上使用雷射裝置形成溝槽圖形已用於新的拋光墊的製造中。在此功能中，墊子材料一般為不含水分的，且使用具有相對高之吸收係數的雷射。可對於在此無水分的媒質中之溝槽圖形利用具有約10.6μm之波長(例如遠紅外線光譜)的二氧化碳(CO2)雷射裝置。然而，在基板拋光期間的調節拋光墊的期間，拋光墊係以拋光流體或拋光化合物(水是其主要成分)來濕潤。具有容易由拋光媒質(例如水)所吸收之波長(例如10.6μm)之雷射裝置的使用帶來了挑戰。當光能由墊子材料中的水所吸收時，水的加熱就隨之而來。水的加熱可能造成水沸騰。隨著墊子材料一般為多孔的，孔隙(或局部區域的孔隙)中水的沸騰可能在墊子表面中造成破裂。橫跨墊子表面的不同區域地，此破裂一般是不可控制的，且可能產生大的凹凸體以及跨拋光表面產生不均勻的溝槽圖形，且，最後，產生不適合的基板拋光結果。 The use of a laser device to form a groove pattern on a polishing pad has been used in the manufacture of new polishing pads. In this function, the mat material is generally moisture free and uses a laser having a relatively high absorption coefficient. A carbon dioxide (CO 2 ) laser device having a wavelength of about 10.6 μm (e.g., a far infrared spectroscopy spectrum) can be utilized for the groove pattern in the moisture-free medium. However, during the polishing of the polishing pad during substrate polishing, the polishing pad is wetted with a polishing fluid or a polishing compound (water is its main component). The use of a laser device having a wavelength (e.g., 10.6 [mu]m) that is easily absorbed by a polishing medium (e.g., water) poses a challenge. When light energy is absorbed by the water in the mat material, heating of the water follows. Heating of the water may cause the water to boil. As the mat material is generally porous, boiling of water in the pores (or pores in the localized areas) may cause cracking in the mat surface. This rupture is generally uncontrollable across different regions of the surface of the mat, and may create large reliefs and create uneven groove patterns across the polished surface and, ultimately, produce unsuitable substrate polishing results.
如本文中所述之利用光學裝置128之拋光墊108的調節可利用具有不容易由拋光媒質(例如拋光流體或拋光化合物)所吸收但有效率地由墊子材料所吸收之波長的光束140及/或154。因為拋光媒質對於光束140及/或154係實質透明的，可實現墊子材料的直接削磨而沒有從墊子材料中的水分所遭遇到的問題，且可如本文中所述地在拋光墊108的處理表面112中形成可控制的溝槽圖形。 Adjustment of the polishing pad 108 utilizing the optical device 128 as described herein may utilize a beam 140 having a wavelength that is not readily absorbed by the polishing medium (e.g., polishing fluid or polishing compound) but is efficiently absorbed by the mat material and/or Or 154. Because the polishing medium is substantially transparent to the beam 140 and/or 154, direct shaving of the mat material can be achieved without the problems encountered with moisture in the mat material, and can be at the polishing pad 108 as described herein. A controllable groove pattern is formed in the processing surface 112.
圖4為圖表400，對於各種波長圖示吸收係數(1/公分(cm)或cm-1)。係將「水窗(water window)」放入圖表400上。在約200奈米(nm)及約1200奈米之間中的波 長顯示低吸收係數(低於約1.0/cm)，同時1200nm之上的波長具有高吸收係數(大於約100/cm)。因此，如圖1、2及3中所示，係同第一調節器裝置124A及第二調節器裝置124B利用具有在「水窗」內之波長範圍的雷射裝置(例如圖1中所述之雷射發射器129)。 Figure 4 is a graph 400 illustrating absorption coefficients (1/cm (cm) or cm -1 ) for various wavelengths. A "water window" is placed on the chart 400. The wavelength in the range between about 200 nanometers (nm) and about 1200 nm shows a low absorption coefficient (less than about 1.0/cm), while the wavelength above 1200 nm has a high absorption coefficient (greater than about 100/cm). Thus, as shown in Figures 1, 2 and 3, the first regulator device 124A and the second regulator device 124B utilize a laser device having a wavelength range within the "water window" (e.g., as described in FIG. Laser emitter 129).
對於雷射發射器129之合適波長的示例包括紫外線波長範圍(例如約355nm)、可見波長範圍(例如約532nm)、近紅外線波長範圍(例如約1064nm)及其組合。在一個實施例中，拋光墊108材料的吸收係數係大於約1.0/cm(例如約5.0/cm)或更大，同時拋光媒質的吸收係數係小於約1.0/cm(例如約0.5/cm)。在一個方面中，雷射發射器129的波長係實質透明(非反應性的)於基於水的拋光媒質且所發射的光束並不顯著地由拋光媒質作用。例如，拋光墊108的處理表面112上的拋光媒質層相對地薄，且所發射的光束通過該拋光媒質層且至處理表面112上而不與拋光媒質交互作用。在一個實施例中，來自雷射發射器129所發射的光束通過拋光墊108之處理表面112上空間中的空氣且不由拋光媒質所作用，使得光束特性(例如光點尺寸及/或入射角度)並不顯著地由拋光媒質所改變。在一個方面中，為了形成圖2及3中所圖示及描述的溝槽圖形，由雷射發射器129所提供的波長範圍對於在拋光處理中所利用的拋光媒質係實質非反應性的，但是對於拋光墊材料是反應性的。在另一方面中，為了形成圖2及3中所圖示及描述的痕跡及/或溝槽圖形，優先於拋光處理中所利用的拋光媒質，由雷射放射器129所提供之 波長範圍係由拋光墊材料所吸收。 Examples of suitable wavelengths for the laser emitter 129 include an ultraviolet wavelength range (eg, about 355 nm), a visible wavelength range (eg, about 532 nm), a near infrared wavelength range (eg, about 1064 nm), and combinations thereof. In one embodiment, the polishing pad 108 material has an absorption coefficient greater than about 1.0/cm (e.g., about 5.0/cm) or greater, while the polishing medium has an absorption coefficient less than about 1.0/cm (e.g., about 0.5/cm). In one aspect, the wavelength of the laser emitter 129 is substantially transparent (non-reactive) to the water-based polishing medium and the emitted light beam does not significantly act by the polishing medium. For example, the polishing medium layer on the processing surface 112 of the polishing pad 108 is relatively thin, and the emitted light beam passes through the polishing medium layer and onto the processing surface 112 without interacting with the polishing medium. In one embodiment, the light beam emitted from the laser emitter 129 passes through the air in the space on the processing surface 112 of the polishing pad 108 and is not affected by the polishing medium such that the beam characteristics (eg, spot size and/or angle of incidence) Not significantly altered by the polishing medium. In one aspect, to form the trench pattern illustrated and described in Figures 2 and 3, the wavelength range provided by the laser emitter 129 is substantially non-reactive with respect to the polishing medium utilized in the polishing process, However, it is reactive to the polishing pad material. In another aspect, in order to form the traces and/or trench patterns illustrated and described in Figures 2 and 3, prior to the polishing medium utilized in the polishing process, provided by the laser emitter 129 The wavelength range is absorbed by the polishing pad material.
在另一方面中，為了形成圖2及3中所圖示及描述的溝槽圖形，主光束140係以對於拋光處理中所利用的拋光媒質係實質非反應性的(但對於拋光墊材料是反應性的)波長範圍來提供。 In another aspect, to form the groove pattern illustrated and described in Figures 2 and 3, the primary beam 140 is substantially non-reactive with respect to the polishing medium utilized in the polishing process (but for the polishing pad material is The reactive range of wavelengths is provided.
「實質透明」可定義為光束在正常操作條件(也就是光束之波長範圍、光束之輸出功率、光束之光點尺寸、在拋光墊材料上之光束靜止時間及其組合)下，沒有能力造成拋光媒質的相位改變。「實質透明」亦可定義為光束在如本文中所述之調節處理中之正常使用下，沒有能力造成拋光媒質加熱及/或沸騰。例如，如本文中所述之雷射發射器129的波長在使用經脈衝化的光束及/或短暫靜止時間的正常操作條件下，在拋光媒質的溫度上不會造成實質升高。「實質透明」亦可定義為拋光媒質在如本文中所述之調節處理中之正常使用下，沒有能力影響自雷射發射器129所發射之光束的性質。「實質非反應性」可定義為光束在正常操作條件(也就是光束之波長範圍、光束之輸出功率、光束之光點尺寸、在拋光墊材料上之光束靜止時間及其組合)下，沒有能力造成拋光媒質的相位改變。「實質非反應性」亦可定義為光束在如本文中所述之調節處理中之正常使用下，沒有能力造成拋光媒質加熱及/或沸騰。例如，如本文中所述之雷射發射器129之波長在使用經脈衝化之光束及/或短暫靜止時間之正常操作條件下，在拋光媒質的溫度上不會造成實質上升。 "Substantial transparency" can be defined as the ability of a beam to be polished under normal operating conditions (ie, the wavelength range of the beam, the output power of the beam, the spot size of the beam, the beam rest time on the polishing pad material, and combinations thereof). The phase of the medium changes. "Substantially transparent" can also be defined as the inability of the beam to be heated and/or boiled by the polishing medium under normal use in the conditioning process as described herein. For example, the wavelength of the laser emitter 129 as described herein does not cause a substantial increase in the temperature of the polishing medium under normal operating conditions using a pulsed beam and/or a brief rest time. "Substantially transparent" may also be defined as the inability of the polishing medium to affect the properties of the beam emitted from the laser emitter 129 under normal use in the conditioning process as described herein. "Substantially non-reactive" can be defined as the inability of the beam under normal operating conditions (ie, the wavelength range of the beam, the output power of the beam, the spot size of the beam, the beam rest time on the polishing pad material, and combinations thereof). Causes a change in the phase of the polishing medium. "Substantially non-reactive" can also be defined as the inability of the beam to heat and/or boil the polishing medium under normal use in the conditioning process as described herein. For example, the wavelength of the laser emitter 129 as described herein does not cause a substantial rise in the temperature of the polishing medium under normal operating conditions using a pulsed beam and/or a brief rest time.
如上所述，為了維持最佳移除率，需要拋光墊108 的週期性調節以再生拋光墊之表面。為了保證拋光墊108之處理表面112有效率的調節(這提供了最佳移除率)，必須監測拋光墊108的狀態，且可基於拋光墊108的狀態來改變調節及/或拋光處理。在一個實施例中，可基於來自與處理站100相關聯之一個或更多個監測裝置之輸入，基於拋光墊108的處理表面112的狀態來調整調節參數。亦可利用在所處理的基板上執行之輪廓量測(profilometry)(接觸或非接觸)及干涉測量術(interferometry)技術以調整調節參數。 As noted above, in order to maintain an optimal removal rate, a polishing pad 108 is required. Periodic adjustment to regenerate the surface of the polishing pad. In order to ensure an efficient adjustment of the treated surface 112 of the polishing pad 108 (which provides an optimum removal rate), the state of the polishing pad 108 must be monitored and the conditioning and/or polishing process can be changed based on the state of the polishing pad 108. In one embodiment, the adjustment parameters may be adjusted based on the state of the processing surface 112 of the polishing pad 108 based on input from one or more monitoring devices associated with the processing station 100. Profilometry (contact or non-contact) and interferometry techniques performed on the processed substrate can also be utilized to adjust the adjustment parameters.
調節參數包括墊子調節的頻率及/或持續時間、雷射功率輸出、雷射脈衝時間、波長及/或頻率、雷射脈衝長度、光點尺寸(光束直徑)、光束之入射角度及其組合。可將調節參數中的某些利用為控制把手(control knob)以維持拋光墊108的處理表面112的一致或所需的構形。例如，時間上的脈衝形狀(光束強度輪廓)及/或空間上的光束強度輪廓(每區域單位之光束強度)可提供構形控制的即時調整。調節參數的調整可提供粗糙度計算的最佳控制以及在拋光墊108的處理表面112上之凹凸體之尺度及/或形狀的最佳控制。在一個實施例中，當在鑽孔模式中使用雷射發射器129形成凹凸體時(其中雷射發射器129係經脈衝化以在拋光墊108的處理表面112上以預定的間隔及深度來形成孔洞)，間隔及/或脈衝可以使得在墊子的邊緣及中心處形成較少的凹凸體，同時在墊子的中間範圍處形成較密且較深的凹凸體。在凹凸體之高度及密度上的這樣的變化可賦能(enable)更均勻的拋光且改善了基板的平面化。 Adjustment parameters include frequency and/or duration of mat adjustment, laser power output, laser pulse time, wavelength and/or frequency, laser pulse length, spot size (beam diameter), angle of incidence of the beam, and combinations thereof. Some of the adjustment parameters may be utilized as a control knob to maintain a uniform or desired configuration of the processing surface 112 of the polishing pad 108. For example, temporal pulse shapes (beam intensity profiles) and/or spatial beam intensity profiles (beam intensity per region unit) provide immediate adjustment of the configuration control. Adjustment of the adjustment parameters can provide optimal control of the roughness calculation and optimal control of the dimensions and/or shape of the reliefs on the treated surface 112 of the polishing pad 108. In one embodiment, when the bumps are formed using the laser emitter 129 in the drilling mode (where the laser emitters 129 are pulsed to be at predetermined intervals and depths on the processing surface 112 of the polishing pad 108 The holes are formed, and the spacing and/or the pulses may cause less irregularities to form at the edges and centers of the mat while forming denser and deeper asperities at the intermediate extent of the mat. Such variations in the height and density of the relief can enable more uniform polishing and improve planarization of the substrate.
圖5為圖1處理站100之局部剖視圖，圖示監測及控制系統的各種實施例，該監測及控制系統賦能在其上所執行的調節處理及拋光處理的閉迴路控制。監測/反饋系統500係圖示於處理站100內。為了處理站100上之處理的閉迴路控制，監測/反饋系統500的元件可與控制器通訊。 5 is a partial cross-sectional view of the processing station 100 of FIG. 1 illustrating various embodiments of a monitoring and control system that enables closed loop control of the conditioning process and polishing process performed thereon. The monitoring/feedback system 500 is illustrated within the processing station 100. In order to handle the closed loop control of the processing on station 100, the components of monitoring/feedback system 500 can communicate with the controller.
監測/反饋系統500可包括第一監測裝置，該第一監測裝置包括一個或更多個第一感應器505，該等第一感應器505係佈置在處理站100的部分上。第一感應器505之各者可為經利用以觀察拋光墊108之處理表面112的光學裝置。例如，第一感應器505可耦合至包殼144的頂板142、支持臂132上、支持構件118上、及其組合以及可觀察拋光墊108之處理表面112的其他位置。第一感應器505中之一個或更多個可為攝影機或光學裝置(例如雷射感應器)，該光學裝置發射朝拋光墊108之處理表面112引導的光束510。在一個示例中，第一感應器505(位於包殼144上)可包括發射光束510的傳送器515A及接收所反射之光束的接收器515B(未圖示)。可利用所反射光束之強度以提供拋光墊108之處理表面112之粗糙度及/或孔隙率(也就是構形)的即時測度。可使用粗糙度及/或孔隙率測度來判定可被調整的調節參數。亦可使用包括光學裝置的第一感應器505來判定拋光墊108之處理表面112的平均高度，以及判定第一溝槽300A的深度及第二溝槽300B的深度(兩者圖示於圖3中)。 The monitoring/feedback system 500 can include a first monitoring device that includes one or more first sensors 505 that are disposed on portions of the processing station 100. Each of the first inductors 505 can be an optical device that is utilized to view the processing surface 112 of the polishing pad 108. For example, the first inductor 505 can be coupled to the top plate 142 of the cladding 144, the support arm 132, the support member 118, and combinations thereof, as well as other locations at which the processing surface 112 of the polishing pad 108 can be viewed. One or more of the first sensors 505 can be a camera or optical device (e.g., a laser sensor) that emits a beam 510 that is directed toward the processing surface 112 of the polishing pad 108. In one example, the first inductor 505 (located on the cladding 144) can include a transmitter 515A that emits a beam 510 and a receiver 515B (not shown) that receives the reflected beam. The intensity of the reflected beam can be utilized to provide an immediate measure of the roughness and/or porosity (i.e., configuration) of the treated surface 112 of the polishing pad 108. Roughness and/or porosity measures can be used to determine adjustment parameters that can be adjusted. The first sensor 505 including the optical device can also be used to determine the average height of the processing surface 112 of the polishing pad 108, and to determine the depth of the first trench 300A and the depth of the second trench 300B (both shown in FIG. 3). in).
在一個實施例中，第一感應器505中之一個或更多個可為攝影機(例如CCD攝影機)或雷射表面掃描器，該攝 影機或雷射表面掃描器在調節及/或拋光期間監測拋光墊108的處理表面112。來自第一感應器505的影像可發送至控制器且可獲得拋光墊108之處理表面112的構形測度。可使用構形測度以判定可被調整的調節參數。構形測度可包括拋光墊108之處理表面112之平均高度以及可用以調整調節參數之第一溝槽300A之深度及第二溝槽300B之深度(兩者圖示於圖3中)。 In one embodiment, one or more of the first sensors 505 can be a camera (eg, a CCD camera) or a laser surface scanner. The camera or laser surface scanner monitors the processing surface 112 of the polishing pad 108 during conditioning and/or polishing. Images from the first sensor 505 can be sent to the controller and a configuration measure of the processing surface 112 of the polishing pad 108 can be obtained. A configuration measure can be used to determine adjustment parameters that can be adjusted. The configuration measure can include the average height of the processing surface 112 of the polishing pad 108 and the depth of the first trench 300A that can be used to adjust the adjustment parameters and the depth of the second trench 300B (both shown in FIG. 3).
替代性地，第一感應器505中之一個或更多個可為電容性感應器以提供表示拋光墊108之處理表面112狀態的構形資訊。利用電容性耦合的第一感應器505亦可經利用以偵測及測量接近性(proximity)及/或位移。亦可使用包括電容性感應裝置的第一感應器505以監測拋光墊108的輪廓，例如判定拋光墊108之處理表面112的平均高度及/或監測拋光墊108的厚度，以及判定第一溝槽300A的深度及第二溝槽300B的深度(兩者圖示於圖3中)。在一個實施例中，可使用厚度資訊以實施校正調節，使得在拋光墊108厚的地方作用較多調節且在拋光墊108薄的地方作用較少調節，以獲得具有最小厚度變化的平坦拋光墊108處理表面112。在另一實施例中，可使用輪廓資訊來判定拋光墊108之處理表面112的磨耗(wear)且可調整調節參數以跨拋光墊108的處理表面112提供均勻的磨耗。 Alternatively, one or more of the first inductors 505 can be capacitive sensors to provide configuration information indicative of the state of the processing surface 112 of the polishing pad 108. The first inductor 505 utilizing capacitive coupling can also be utilized to detect and measure proximity and/or displacement. A first inductor 505 including a capacitive sensing device can also be used to monitor the contour of the polishing pad 108, such as determining the average height of the processing surface 112 of the polishing pad 108 and/or monitoring the thickness of the polishing pad 108, and determining the first groove. The depth of 300A and the depth of the second trench 300B (both shown in Figure 3). In one embodiment, thickness information can be used to implement the correction adjustment such that more adjustment is applied where the polishing pad 108 is thicker and less adjustment is made where the polishing pad 108 is thin to achieve a flat polishing pad with minimal thickness variation. 108 treats surface 112. In another embodiment, profile information can be used to determine the wear of the processing surface 112 of the polishing pad 108 and the adjustment parameters can be adjusted to provide uniform wear across the processing surface 112 of the polishing pad 108.
監測/反饋系統500可包括第二監測裝置，該第二監測裝置包括一個或更多個第二感應器520A及520B。第二感應器520A及520B可為旋轉感應器，該等旋轉感應器係經利 用以感應扭矩且向控制器提供扭矩值。第二感應器520A可為平台旋轉感應器，該平台旋轉感應器係經利用以獲得表示用以在調節及/或拋光期間旋轉平台102及拋光墊108所需之力量的度測。第二感應器520A可為扭矩或其他旋轉力量感應器，該扭矩或其他旋轉力量感應器係耦合至驅動馬達106或耦合至驅動馬達106的輸出軸。同樣地，第二感應器520B可耦合至托架頭114。第二感應器520B可為對於托架頭114的旋轉感應器，該旋轉感應器係經利用以獲得用以將托架頭114以拋光刮掃圖形215(圖示於圖2中)刮掃所需之力量的度測。第二感應器520B可為耦合至驅動系統120或驅動系統120之輸出軸的扭矩感應器、剪力感應器或其他旋轉力量感應器。第二感應器520A及520B可向控制器提供扭矩值，該扭矩值係經利用以判定可被調整的調節參數。 The monitoring/feedback system 500 can include a second monitoring device that includes one or more second sensors 520A and 520B. The second inductors 520A and 520B can be rotation sensors, and the rotation sensors are Used to sense torque and provide torque to the controller. The second inductor 520A can be a platform rotation sensor that is utilized to obtain a measure of the force required to rotate the platform 102 and the polishing pad 108 during conditioning and/or polishing. The second inductor 520A can be a torque or other rotational force sensor coupled to the drive motor 106 or to the output shaft of the drive motor 106. Likewise, the second inductor 520B can be coupled to the cradle head 114. The second inductor 520B can be a rotation sensor for the carriage head 114 that is utilized to obtain a sweeping of the carriage head 114 in a polishing sweep pattern 215 (shown in Figure 2). The measurement of the strength of the need. The second inductor 520B can be a torque sensor, a shear sensor, or other rotational force sensor coupled to the output shaft of the drive system 120 or drive system 120. The second inductors 520A and 520B can provide a torque value to the controller that is utilized to determine adjustment parameters that can be adjusted.
監測/反饋系統500可包括第三監測裝置，例如第三感應器525。第三感應器525可包括墊子表面感應器，該墊子表面感應器基於墊子構形上的改變來反應。第三感應器525可為摩擦感應器，該摩擦感應器包括墊子耦合構件530及感應器裝置535。墊子耦合構件530可為一材料的圓盤或平板，該材料係經利用以騎乘於拋光墊108之處理表面112上且隨著拋光墊108旋轉而與處理表面112交互作用。墊子耦合構件530可基於處理表面中的不均勻度來移動且可由感應器裝置535來感應位移。係向控制器提供位移值且可判定及實施對於調節參數的調整。替代性地或附加地，可將墊子耦合構件530以特定負載抵著處理表面112，且可藉由感應器裝置 535感應基於摩擦的位移值、扭矩值或其他值。係向控制器提供位移值、扭矩值或其他值且可判定及實施對於調節參數的調整。雖然第三感應器525係圖示為耦合至基座104且係安置為相鄰於拋光墊108的邊緣，第三感應器525(或多個第三感應器525)可耦合至處理站100的其他部分以在不同的/多個位置處獲得拋光墊108狀態的反饋。 The monitoring/feedback system 500 can include a third monitoring device, such as a third inductor 525. The third sensor 525 can include a mat surface sensor that reacts based on changes in the mat configuration. The third inductor 525 can be a friction sensor including a mat coupling member 530 and an inductor device 535. The mat coupling member 530 can be a disc or plate of material that is utilized to ride on the treated surface 112 of the polishing pad 108 and interact with the processing surface 112 as the polishing pad 108 rotates. The mat coupling member 530 can move based on the unevenness in the processing surface and can be sensed by the sensor device 535. The displacement value is provided to the controller and the adjustment to the adjustment parameters can be determined and implemented. Alternatively or additionally, the mat coupling member 530 can be placed against the processing surface 112 with a particular load and can be by the sensor device 535 senses friction based displacement values, torque values or other values. A displacement, torque or other value is provided to the controller and adjustments to the adjustment parameters can be determined and implemented. Although the third inductor 525 is illustrated as being coupled to the pedestal 104 and disposed adjacent the edge of the polishing pad 108, the third inductor 525 (or plurality of third inductors 525) may be coupled to the processing station 100. Other portions get feedback on the status of the polishing pad 108 at different/multiple locations.
監測/反饋系統500可包括第四監測裝置，例如第四感應器540。第四感應器540可包括感應裝置，該感應裝置在拋光處理期間提供殘留在基板116上之材料的度測。第四感應器540可為佈置於平台102內窗口545下之渦流(eddy current)感應器或光學裝置(例如雷射發射器或偵測器)、或光發射裝置(例如白光源)及偵測器，該窗口545係形成於拋光墊108中。可利用第四感應器540以在拋光處理期間判定基板116的構形，其為處理表面112構形之調節程度的指示。可使用第四感應器540以判定凹陷及/或侵蝕，該凹陷及/或侵蝕表示拋光墊108的過度調節。因此，可基於基板116構形的觀察來提供調節參數的即時調整。 The monitoring/feedback system 500 can include a fourth monitoring device, such as a fourth sensor 540. The fourth inductor 540 can include an inductive device that provides a measure of the material remaining on the substrate 116 during the polishing process. The fourth inductor 540 can be an eddy current sensor or optical device (such as a laser emitter or detector) disposed under the window 545 in the platform 102, or a light emitting device (such as a white light source) and detecting The window 545 is formed in the polishing pad 108. A fourth inductor 540 can be utilized to determine the configuration of the substrate 116 during the polishing process, which is an indication of the degree of adjustment of the configuration of the processing surface 112. A fourth inductor 540 can be used to determine the depression and/or erosion that represents an over-adjustment of the polishing pad 108. Thus, an immediate adjustment of the adjustment parameters can be provided based on the observation of the configuration of the substrate 116.
在一個實施例中，可使用來自感應器505、520A、520B、525及540中之一個或更多個指示粗糙度之度測及/或剪力量測的訊號以增加或減少脈衝的數量以恢復表面粗糙度，使得維持了拋光墊108之處理表面112的最佳構形。在另一實施例中，可單獨增加或減少痕跡208A(圖示於圖2中)的間隔，或者為了更穩定的拋光效能而與來自雷射發射器129的脈衝數量結合來增加或減少痕跡208A的間隔。 In one embodiment, signals from one or more of the sensors 505, 520A, 520B, 525, and 540 indicating roughness and/or shear strength measurements may be used to increase or decrease the number of pulses to recover The surface roughness is such that the optimal configuration of the treated surface 112 of the polishing pad 108 is maintained. In another embodiment, the spacing of traces 208A (shown in FIG. 2) may be increased or decreased individually, or combined with the number of pulses from laser emitter 129 to increase or decrease trace 208A for more stable polishing performance. Interval.
圖6為拋光墊600的俯視圖，圖示藉由本文中所述之方法所提供之經圖形化之處理表面605的另一實施例。在此實施例中，係藉由光學裝置128(圖示於圖1及5中)的直線掃描來提供經圖形化的處理表面605，該直線掃描係自接近拋光墊600的幾何中心至拋光墊600的邊緣，反之亦然。例如，光學裝置128提供光束(也就是圖1及5中所圖示的光束140及/或光束154)，在拋光墊600正在旋轉的同時，該光束掃描拋光墊600的半徑。由於拋光墊600的移動，相對於在中心處拋光墊600的旋轉速度(例如在該處，旋轉速度為零)，旋轉速度在拋光墊600的邊緣處較高。如圖6中所示，結果為在經圖形化的處理表面605上之一萬花尺型(spirograph-type)的圖形。 6 is a top plan view of polishing pad 600 illustrating another embodiment of a patterned processing surface 605 provided by the methods described herein. In this embodiment, a patterned processing surface 605 is provided by linear scanning of optical device 128 (shown in Figures 1 and 5) from the geometric center of the polishing pad 600 to the polishing pad. The edge of 600 and vice versa. For example, optical device 128 provides a beam of light (i.e., beam 140 and/or beam 154 as illustrated in Figures 1 and 5) that scans the radius of polishing pad 600 while polishing pad 600 is rotating. Due to the movement of the polishing pad 600, the rotational speed is higher at the edge of the polishing pad 600 relative to the rotational speed of the polishing pad 600 at the center (e.g., where the rotational speed is zero). As shown in FIG. 6, the result is a spirograph-type graphic on the patterned processing surface 605.
經圖形化的處理表面605包括複數個痕跡610。痕跡610的深度及/或痕跡610的間隔係藉由光束(140及/或154)掃描速度、光束脈衝率以及拋光墊600旋轉速度中之一個或組合來判定。例如，經圖形化之處理表面605的萬花尺型圖形包括由痕跡610所形成的複數個弧線(僅圖示弧線615A及615B)。弧線615A可於拋光墊600中心處開始且在拋光墊600的圓周附近過渡至弧線615B，同時弧線615B在拋光墊600的中心處結束。弧線615A及615B的圓形形狀可基於拋光墊600的旋轉速度。例如，當拋光墊600的旋轉速度緩慢時，弧線615A及615B可更加橢圓。隨著光束(140及/或154)徑向地橫穿墊子，可藉由變化光束的掃描速度來提供類似的效應。可變化掃描速度以補償拋光墊600的變化 徑向速度，以維持光束及拋光墊600之間固定的相對速度以作用均勻的標線(marking)深度。 The patterned processing surface 605 includes a plurality of traces 610. The depth of the trace 610 and/or the spacing of the traces 610 are determined by one or a combination of the scanning speed of the beam (140 and/or 154), the beam pulse rate, and the rotational speed of the polishing pad 600. For example, the graphical representation of the patterned surface 605 includes a plurality of arcs formed by traces 610 (only arcs 615A and 615B are shown). Arc 615A may begin at the center of polishing pad 600 and transition to arc 615B near the circumference of polishing pad 600 while arc 615B ends at the center of polishing pad 600. The circular shape of the arcs 615A and 615B may be based on the rotational speed of the polishing pad 600. For example, when the rotational speed of the polishing pad 600 is slow, the arcs 615A and 615B may be more elliptical. As the beam (140 and/or 154) traverses the mat radially, a similar effect can be provided by varying the scanning speed of the beam. The scanning speed can be varied to compensate for changes in the polishing pad 600 The radial velocity is maintained to maintain a fixed relative velocity between the beam and the polishing pad 600 to effect a uniform marking depth.
圖7A-7C為痕跡陣列700A-700C的示意俯視圖，該等痕跡陣列700A-700C可使用如本文中所述之方法來形成於拋光墊(圖示於圖1、2、5及6中)上。圖7A圖示具有複數個痕跡705的痕跡陣列700A，該等痕跡705具有實質一致的外尺度d以及在X方向上實質相似的間隔710A。Y方向上的間隔可實質相同於間隔710A。圖7B圖示具有複數個痕跡705的痕跡陣列700B，該等痕跡705具有實質一致的外尺寸d以及在X方向上實質相似的間隔710B，該間隔710B大於間隔710A。Y方向上的間隔可實質相等於間隔710B。圖7C圖示具有複數個痕跡705的痕跡陣列700C，該等痕跡705具有實質一致的外尺度d。然而，係設定痕跡705的間隔使得痕跡705至少部分地重疊且形成痕跡705的線或鏈715。雖然圖7A-7C中的痕跡705圖示為圓形，痕跡705可為一個形狀或形狀的任何組合，例如如所示的圓形、矩形、三角形、直線圖形及其類似物。尺度d在圓形痕跡的情況中可為直徑，或為其他多邊形形狀的外尺度。可在調節期間，藉由設定光束的光點尺寸來提供尺度d。光點尺寸可約為20μm至約200μm。此外，可根據需要提供痕跡陣列700A-700C中所示的一個尺度d或尺度d的組合，以提供包含相似尺寸的痕跡705(例如相同尺度d及/或相同間隔)或不同尺寸及間隔的痕跡705之痕跡陣列。 7A-7C are schematic top views of trace arrays 700A-700C that can be formed on a polishing pad (shown in Figures 1, 2, 5, and 6) using methods as described herein. . FIG. 7A illustrates an array of traces 700A having a plurality of traces 705 having substantially uniform outer dimensions d and substantially similar intervals 710A in the X direction. The spacing in the Y direction may be substantially the same as the spacing 710A. FIG. 7B illustrates a trace array 700B having a plurality of traces 705 having substantially uniform outer dimensions d and substantially similar intervals 710B in the X direction, the spacers 710B being greater than the spacing 710A. The spacing in the Y direction can be substantially equal to the spacing 710B. Figure 7C illustrates an array of traces 700C having a plurality of traces 705 having substantially uniform outer dimensions d. However, the spacing of the traces 705 is set such that the traces 705 at least partially overlap and form a line or chain 715 of traces 705. Although the traces 705 in Figures 7A-7C are illustrated as being circular, the traces 705 can be any combination of shapes or shapes, such as circular, rectangular, triangular, linear, and the like as shown. The dimension d can be a diameter in the case of a circular trace or an external dimension of other polygonal shapes. The dimension d can be provided by setting the spot size of the beam during the adjustment. The spot size can range from about 20 [mu]m to about 200 [mu]m. In addition, a combination of one dimension d or dimension d shown in trace arrays 700A-700C can be provided as needed to provide traces 705 of similar size (eg, the same dimension d and/or the same spacing) or traces of different sizes and spacings. 705 trace array.
圖8A-8C為痕跡陣列800A-800C的示意剖視圖，該 等痕跡陣列800A-800C可使用如本文中所述之方法來形成於拋光墊(圖示於圖1、2、5及6中)之主體110上。圖8A圖示具有複數個痕跡805的痕跡陣列800A，該等痕跡805具有實質一致的間隔810A以及實質一致的高度h。圖8B圖示具有複數個痕跡805的痕跡陣列800B，該等痕跡805具有實質一致的間隔810B以及實質相似的高度h，該高度h小於圖8A中所示之痕跡805的高度h。圖8C圖示具有複數個痕跡805的痕跡陣列800C，該等痕跡805具有實質一致的間隔810C及高度h。可根據所需提供痕跡陣列800A-800C中所圖示的一個高度h或高度h的組合，以提供包含相似尺寸之痕跡805(例如相同高度h及/或相同間隔)或不同高度h及間隔的痕跡805的痕跡陣列。在調節期間，可藉由設定合適數量的光束之不連續脈衝來提供高度h。增加脈衝的數量可促進較大的痕跡深度(也就是高度h)。 8A-8C are schematic cross-sectional views of a trace array 800A-800C, The trace arrays 800A-800C can be formed on the body 110 of the polishing pad (shown in Figures 1, 2, 5 and 6) using methods as described herein. FIG. 8A illustrates an array of traces 800A having a plurality of traces 805 having substantially uniform intervals 810A and substantially uniform heights h. Figure 8B illustrates a trace array 800B having a plurality of traces 805 having substantially uniform intervals 810B and a substantially similar height h that is less than the height h of traces 805 shown in Figure 8A. FIG. 8C illustrates an array of traces 800C having a plurality of traces 805 having substantially uniform spacing 810C and height h. A combination of height h or height h as illustrated in trace arrays 800A-800C may be provided as needed to provide traces 805 of similar dimensions (eg, the same height h and/or the same spacing) or different heights h and spacing. An array of traces of traces 805. During adjustment, the height h can be provided by setting a discrete number of discrete pulses of the beam. Increasing the number of pulses promotes a larger trace depth (i.e., height h).
圖9A-9D為痕跡之各種實施例的示意俯視圖，該等痕跡可使用本文中所述之方法來形成於拋光墊中或拋光墊(圖示於圖1、2、5及6中)上。圖9A以三角形的形式描繪痕跡905A；圖9B以矩形的形式描繪痕跡905B；圖9C以圓形的形式描繪痕跡905C；以及圖9D描繪具有複數個直線溝槽910的痕跡905D。雖然圖示四個交叉的溝槽910，可使用多於四個或少於四個的溝槽910。此外，溝槽910可不交叉。可使用一個痕跡905A-905D或痕跡905A-905D的組合以如本文中所述的在拋光墊上形成經圖形化的處理表面。此外，任何的痕跡905A-905D可經尺寸化以具有自幾釐米至接近拋光 墊直徑的主要尺度。例如，痕跡905A(或痕跡905B)可經尺寸化，使得角隅相鄰於拋光墊的周緣。額外的痕跡(905A、905B或痕跡905A-905D的組合)可形成於痕跡905A(或痕跡905B)內或巢套(nested)於痕跡905A(或痕跡905B)外或痕跡905A(或痕跡905B)內。在另一示例中，痕跡905D可經形成，使得溝槽910的長度實質相等於拋光墊的直徑。 9A-9D are schematic top views of various embodiments of traces that may be formed in a polishing pad or polishing pad (shown in Figures 1, 2, 5, and 6) using the methods described herein. Figure 9A depicts trace 905A in the form of a triangle; Figure 9B depicts trace 905B in the form of a rectangle; Figure 9C depicts trace 905C in the form of a circle; and Figure 9D depicts trace 905D having a plurality of linear grooves 910. Although four intersecting trenches 910 are illustrated, more than four or fewer than four trenches 910 can be used. Further, the trenches 910 may not intersect. A combination of traces 905A-905D or traces 905A-905D can be used to form a patterned treated surface on a polishing pad as described herein. In addition, any traces 905A-905D can be sized to have a few centimeters to nearly polished The main dimension of the pad diameter. For example, trace 905A (or trace 905B) can be sized such that the corners are adjacent to the periphery of the polishing pad. Additional traces (905A, 905B or combinations of traces 905A-905D) may be formed within trace 905A (or trace 905B) or nested outside trace 905A (or trace 905B) or trace 905A (or trace 905B) . In another example, trace 905D can be formed such that the length of trench 910 is substantially equal to the diameter of the polishing pad.
圖10A及10B為拋光墊1000的示意俯視圖，分別圖示其上之經圖形化處理表面1005A、1005B之部分的實施例。在圖10A中，拋光墊1000包括形成為圓形的複數個痕跡1010A。在圖10B中，拋光墊1000包括複數個矩形形式的痕跡1010B。經圖形化之處理表面1005A及1005B之各者可形成於拋光墊1000的整個表面中或整個表面上，或可使用各者之組合。 10A and 10B are schematic top views of polishing pad 1000, each illustrating an embodiment of a portion of patterned surface 1005A, 1005B thereon. In FIG. 10A, polishing pad 1000 includes a plurality of traces 1010A formed in a circular shape. In FIG. 10B, polishing pad 1000 includes a plurality of traces 1010B in the form of a rectangle. Each of the patterned treatment surfaces 1005A and 1005B may be formed in the entire surface of the polishing pad 1000 or on the entire surface, or a combination of the others may be used.
某些或所有的痕跡1010A及1010B可與其他痕跡1010A及1010B部分地重疊。在一個示例中，經圖形化的處理表面1005A可包含重疊的複數個痕跡1010A。痕跡1010A的至少一部分可沿半徑方向以約50%(或更多)重疊另一相鄰的痕跡1010A。痕跡1010A的深度可約為50μm(或更少)。可在經圖形化的處理表面1005B上使用類似的處理以在經圖形化的處理表面1005A中形成如上所述之痕跡1010B的重疊。 Some or all of the traces 1010A and 1010B may partially overlap with other traces 1010A and 1010B. In one example, the patterned processing surface 1005A can include a plurality of overlapping traces 1010A. At least a portion of the trace 1010A may overlap another adjacent trace 1010A by about 50% (or more) in the radial direction. The depth of the trace 1010A can be about 50 μm (or less). A similar process can be used on the patterned processing surface 1005B to form an overlap of the traces 1010B as described above in the patterned processing surface 1005A.
另一調節方法包括相對於拋光墊1000以徑向的或圓周的(circumferential)方向掃描光束(140及/或154)，以在光束及拋光墊1000之間達成不同的相對速度。例如，可以拋光墊1000旋轉的方向來掃描光束以產生直線或弧線的痕 跡。 Another method of adjustment includes scanning the beam (140 and/or 154) in a radial or circumferential direction relative to the polishing pad 1000 to achieve different relative velocities between the beam and the polishing pad 1000. For example, the direction in which the polishing pad 1000 is rotated can be scanned to produce a straight or curved mark. trace.
提供了用於在拋光墊108(圖2)、600(圖6)及1000(圖10A及10B)上提供經圖形化之處理表面200(圖2)、605(圖6)、1005A(圖10A)及1005B(圖10B)之裝置及方法。經圖形化的處理表面可藉由光束來形成且以不連續圖形、重複圖形、重疊圖形或痕跡及其類似物來包括多個圖形，該等圖形包括直線、弧線或形狀、痕跡、物體及其類似物。此外，提供了用於監測/反饋系統500之裝置及方法，該監測/反饋系統500係用於利用光學調節的CMP系統之閉迴路控制。監測/反饋系統500提供調節參數的控制以獲得最佳移除率。調節參數的控制提供拋光墊處理表面的精確構形控制，這造成較低的缺陷率、較長的墊子壽命以及改良的產量(throughput)。 Provided for providing patterned processing surfaces 200 (Fig. 2), 605 (Fig. 6), 1005A (Fig. 10A) on polishing pads 108 (Fig. 2), 600 (Fig. 6), and 1000 (Figs. 10A and 10B). And apparatus and method of 1005B (Fig. 10B). The patterned processing surface may be formed by a light beam and include a plurality of graphics in a discontinuous pattern, a repeating pattern, an overlapping pattern or a trace, and the like, the lines including lines, arcs or shapes, traces, objects and their analog. In addition, apparatus and methods are provided for a monitoring/feedback system 500 for closed loop control using an optically regulated CMP system. The monitoring/feedback system 500 provides control of the adjustment parameters to achieve an optimal removal rate. Control of the conditioning parameters provides precise configuration control of the polishing pad processing surface, which results in lower defect rates, longer mat life, and improved throughput.
雖然以上所述係針對本發明之實施例，可設計出該發明之其他且進一步的實施例而不脫離該發明之基礎範圍。 While the above is directed to embodiments of the invention, other and further embodiments of the invention may be devised without departing from the scope of the invention.
100‧‧‧處理站 100‧‧‧Processing Station
102‧‧‧平台 102‧‧‧ platform
104‧‧‧基座 104‧‧‧Base
106‧‧‧驅動馬達 106‧‧‧Drive motor
108‧‧‧拋光墊 108‧‧‧ polishing pad
110‧‧‧主體 110‧‧‧ Subject
112‧‧‧處理表面 112‧‧‧Processing surface
114‧‧‧托架頭 114‧‧‧ bracket head
116‧‧‧基板 116‧‧‧Substrate
118‧‧‧支持構件 118‧‧‧Support components
120‧‧‧驅動系統 120‧‧‧Drive system
122‧‧‧流體施用器 122‧‧‧Fluid applicator
124A‧‧‧第一調節器裝置 124A‧‧‧First regulator device
124B‧‧‧第二調節器裝置 124B‧‧‧Second regulator device
126‧‧‧調節器頭 126‧‧‧Regulator head
128‧‧‧光學裝置 128‧‧‧Optical device
129‧‧‧雷射發射器 129‧‧‧Laser transmitter
130‧‧‧支持構件 130‧‧‧Support components
132‧‧‧支持臂 132‧‧‧Support arm
134‧‧‧致動器 134‧‧‧Actuator
136‧‧‧訊號構件 136‧‧‧Signal components
138‧‧‧訊號產生器 138‧‧‧Signal Generator
140‧‧‧光束 140‧‧‧ Beam
142‧‧‧頂板 142‧‧‧ top board
144‧‧‧包殼 144‧‧‧Encasement
146‧‧‧開口 146‧‧‧ openings
148‧‧‧窗口 148‧‧‧ window
150‧‧‧反射元件 150‧‧‧reflecting elements
152‧‧‧致動器 152‧‧‧Actuator
154‧‧‧光束 154‧‧‧ Beam
500‧‧‧監測/反饋系統 500‧‧‧Monitoring/Feedback System
505‧‧‧第一感應器 505‧‧‧First sensor
510‧‧‧光束 510‧‧‧ Beam
515A‧‧‧傳送器 515A‧‧‧transmitter
515B‧‧‧接收器 515B‧‧‧ Receiver
520A‧‧‧第二感應器 520A‧‧‧Second sensor
520B‧‧‧第二感應器 520B‧‧‧Second sensor
525‧‧‧第三感應器 525‧‧‧ third sensor
530‧‧‧墊子耦合構件 530‧‧‧Mats coupling member
535‧‧‧感應器裝置 535‧‧‧ sensor device
540‧‧‧第四感應器 540‧‧‧fourth sensor
545‧‧‧窗口 545‧‧‧ window
Claims (23)
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| US61/780,155 | 2013-03-13 | ||
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| US61/935,747 | 2014-02-04 |
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| TW103108421A TWI625197B (en) | 2013-03-13 | 2014-03-11 | Laser pad conditioning process control |
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| US (1) | US20140273752A1 (en) |
| TW (1) | TWI625197B (en) |
| WO (1) | WO2014164360A1 (en) |
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- 2014-03-07 US US14/200,149 patent/US20140273752A1/en not_active Abandoned
- 2014-03-11 TW TW103108421A patent/TWI625197B/en active
- 2014-04-02 WO PCT/US2014/022130 patent/WO2014164360A1/en active Application Filing
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| TWI791816B (en) * | 2018-04-17 | 2023-02-11 | 日商迪思科股份有限公司 | Shaping method of cutter |
| CN110774163A (en) * | 2018-07-31 | 2020-02-11 | 台湾积体电路制造股份有限公司 | Chemical mechanical polishing system and method thereof |
| TWI766177B (en) * | 2018-07-31 | 2022-06-01 | 台灣積體電路製造股份有限公司 | Chemical mechanical polishing system and method |
| US11738423B2 (en) | 2018-07-31 | 2023-08-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chemical mechanical polishing apparatus and method |
| TWI765186B (en) * | 2018-10-29 | 2022-05-21 | 台灣積體電路製造股份有限公司 | Apparatus for polishing substrate, method for operating polishing system, and polishing system for polishing process |
| CN115533753A (en) * | 2022-10-09 | 2022-12-30 | 湘潭大学 | Polishing apparatus and polishing apparatus on-line dressing method |
Also Published As
| Publication number | Publication date |
|---|---|
| US20140273752A1 (en) | 2014-09-18 |
| WO2014164360A1 (en) | 2014-10-09 |
| TWI625197B (en) | 2018-06-01 |
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