JP2006093180A - Method of manufacturing semiconductor device - Google Patents

Method of manufacturing semiconductor device Download PDF

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Publication number
JP2006093180A
JP2006093180A JP2004272852A JP2004272852A JP2006093180A JP 2006093180 A JP2006093180 A JP 2006093180A JP 2004272852 A JP2004272852 A JP 2004272852A JP 2004272852 A JP2004272852 A JP 2004272852A JP 2006093180 A JP2006093180 A JP 2006093180A
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Prior art keywords
polishing
value
surface temperature
polishing pad
substrate
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Satoru Matsumoto
悟 松本
Yuichi Kurimoto
優一 栗本
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Priority to JP2004272852A priority Critical patent/JP2006093180A/en
Priority to US11/228,214 priority patent/US20060063472A1/en
Publication of JP2006093180A publication Critical patent/JP2006093180A/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/015—Temperature control

Abstract

<P>PROBLEM TO BE SOLVED: To provide a polishing method for stably performing polishing even if the temperature on the surface of a polishing pad varies for each processing. <P>SOLUTION: A mechanism for supplying an abrasive 15 to the surface of the polishing pad 12 which is stuck to a surface plate 11 to perform polishing while pressing a substrate 13 comprises a mechanism 16 for measuring the surface temperatures of the polishing pad 12 during polishing, and a unit for collecting the measured surface temperatures to calculate the average value and the integration value during polishing processing. When the average and integration values fall below a predetermined reference value, the polished substrate is identified. The management of polishing amount by means of the average and integration values of the surface temperatures enables the stable polishing even with variations in the surface temperatures of the polishing pad. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、定盤上に貼り付けた研磨パッド表面に研磨剤を供給し、基盤を押し当てながら半導体ウェハなどを研磨する研磨装置に関し、研磨パッドの表面温度を測定し、研磨結果の予測、研磨時間を決定する技術に関する。   The present invention relates to a polishing apparatus for supplying a polishing agent to the surface of a polishing pad affixed on a surface plate and polishing a semiconductor wafer or the like while pressing a substrate, measuring a surface temperature of the polishing pad, and predicting a polishing result. The present invention relates to a technique for determining a polishing time.

従来の半導体ウェハの表面を研磨するCMP技術において、設備トラブルや、搬送律速により、研磨処理から次の研磨処理の間が通常よりも時間が増加した場合において、設備トラブルが軽微なものであり、停止時間が数分レベルの短い時間であった場合は、そのまま処理を継続する場合が多い。   In CMP technology for polishing the surface of conventional semiconductor wafers, equipment troubles are minor when the time between the polishing process and the next polishing process is longer than usual due to equipment troubles and transfer rate control, If the stop time is a short time of several minutes, the process is often continued as it is.

ここで、従来技術として特許文献１又は特許文献２に示されている構成について図１０を用いて説明する。研磨パッド１０２を貼りつけた定盤１０１を回転させ、研磨剤１０５を供給し、キャリア１０４で保持した基盤１０３を回転させながら、研磨パッド１０２に押し当てて研磨する機構の場合、研磨パッド１０２の表面の温度を測定するセンサー１０６を備え、接続したモニタリングツール１０７により、測定した温度を常時モニターする。この機構を用いて、メタル膜を研磨し、埋め込み配線を形成するための研磨処理を実施する際に、研磨中の研磨パッドの表面温度を計測し、研磨される膜種が変化する時の研磨パッドの表面温度が変化する点を抽出し、終点検出機構として利用している。
特開平７−９４４５２号公報 特開平８−３３０２６１号公報 Here, the configuration shown in Patent Document 1 or Patent Document 2 as the prior art will be described with reference to FIG. In the case of a mechanism in which the surface plate 101 with the polishing pad 102 attached is rotated, the abrasive 105 is supplied, and the substrate 103 held by the carrier 104 is rotated and pressed against the polishing pad 102 to polish. A sensor 106 for measuring the temperature of the surface is provided, and the measured temperature is constantly monitored by a connected monitoring tool 107. This mechanism is used to polish the metal film and measure the surface temperature of the polishing pad during polishing to perform polishing for forming embedded wiring, and polishing when the type of film being polished changes. A point where the surface temperature of the pad changes is extracted and used as an end point detection mechanism.
JP-A-7-94452 JP-A-8-330261

しかしながら、設備トラブルや、搬送律速により、研磨処理から次の研磨処理の間が通常よりも時間が増加した場合には、研磨により上昇した研磨パッドの表面温度が次の処理開始時において、通常よりも低下する。半導体ウェハの表面を研磨するCMP技術においては、CMPの化学的作用は研磨中の温度に依存するため、研磨レートに影響する。研磨パッドの表面温度と研磨レートには相関があるため、研磨パッドの表面温度が低い状態から研磨開始した場合は、研磨レートの低下につながり、製品の残膜異常を発生させる。これまで、停止時間が短い場合は、特に対象製品の確認無しに装置を稼動させており、製品の残膜異常を検知する手段が無いという問題がある。   However, if the time between the polishing process and the next polishing process increases more than usual due to equipment troubles and transfer rate control, the surface temperature of the polishing pad that has increased due to polishing will be higher than usual at the start of the next process. Also decreases. In CMP technology for polishing the surface of a semiconductor wafer, the chemical action of CMP depends on the temperature during polishing, and thus affects the polishing rate. Since there is a correlation between the surface temperature of the polishing pad and the polishing rate, when polishing is started from a state where the surface temperature of the polishing pad is low, the polishing rate is lowered and an abnormal product remaining film is generated. Up to now, when the stop time is short, there is a problem that the apparatus is operated without particularly checking the target product and there is no means for detecting a residual film abnormality of the product.

また、特許文献１及び特許文献２に示されている方法のように研磨パッドの表面温度を測定し、エンドポイントとして利用する場合においては、メタル膜の研磨において、埋め込み配線を形成する研磨に対しては有効ではあるが、絶縁膜の研磨のように、研磨される膜種が変わらない研磨処理に対しては、エンドポイントとして抽出できるレベルの温度変化が無いため、使用できない問題がある。   In addition, when the surface temperature of the polishing pad is measured and used as an end point as in the methods disclosed in Patent Document 1 and Patent Document 2, the polishing for forming the embedded wiring is performed in the polishing of the metal film. However, there is a problem that it cannot be used for a polishing process in which the type of film to be polished does not change, such as polishing of an insulating film, because there is no temperature change at a level that can be extracted as an end point.

本発明では、定盤上に貼り付けた研磨パッド表面に研磨剤を供給し、基盤を押し当てながら研磨する機構において、研磨中の研磨パッドの表面温度を測定する機構を備え、測定した前記表面温度を収集するユニットを備え、前記表面温度の平均値および積分値、微分値を算出し、前記平均値および積分値、微分値をモニターすることを特徴とする研磨方法であり、前記平均値および積分値、微分値が基準値を下回る時に研磨された基盤を識別し、警報を発する。微分値を算出する場合は、研磨開始直後の前記表面温度の上昇期間において、前記表面温度の傾きである微分値をリアルタイムで算出し、事前に設定した基準値を下回った場合に研磨された基盤を識別し、警報を発する。さらに、前記平均値および積分値があらかじめ設定した値や研磨処理対象基盤の直前に処理された１枚および数枚の基盤の研磨処理中の研磨パッドの表面温度の平均値および積分値の平均値を算出し、その値に達するまで研磨することで、必要研磨量を確保し、終点検出機構として利用する研磨方法であり、単層膜の研磨においても機能する終点検出機構である。さらに、前記の終点検出機構を用いて研磨することを特徴とするプログラムおよび記録媒体として用いる。   In the present invention, in the mechanism for supplying a polishing agent to the surface of the polishing pad affixed on the surface plate and polishing while pressing the substrate, the surface is measured by providing a mechanism for measuring the surface temperature of the polishing pad being polished. A polishing method comprising a unit for collecting temperature, calculating an average value, an integral value, and a differential value of the surface temperature, and monitoring the average value, the integral value, and the differential value, the average value and When the integral value and the differential value are below the reference value, the ground substrate is identified and an alarm is issued. When calculating the differential value, the differential value, which is the slope of the surface temperature, is calculated in real time during the increase period of the surface temperature immediately after the start of polishing, and the substrate polished when it falls below a preset reference value Is identified and an alarm is issued. Further, the average value and the integral value are preset values, and the average value of the surface temperature and the integral value of the polishing pad during the polishing process of one or several substrates processed immediately before the substrate to be polished. This is a polishing method that secures a necessary amount of polishing by polishing until it reaches that value, and is used as an end point detection mechanism, and is an end point detection mechanism that also functions in single layer film polishing. Furthermore, it is used as a program and a recording medium characterized by polishing using the end point detection mechanism.

さらに、研磨処理ユニットにおいて、基盤の研磨処理と研磨処理の間に発生する基盤の搬送待機時間を計測する機構を有し、事前に設定した基準値を上回った場合に次に研磨された基盤を識別し、警報を発することを特徴とする研磨方法である。   Furthermore, the polishing unit has a mechanism for measuring the waiting time for transferring the substrate generated between the polishing process of the substrate, and if the substrate exceeds the preset reference value, the next polished substrate is A polishing method characterized by identifying and issuing an alarm.

本発明のように、研磨処理中の研磨パッド表面温度を測定し、前記表面温度の平均値および積分値を算出し、前記平均値および積分値の推移を管理することで、研磨レートの低下が予想されるウェハを検知でき、前記ウェハを抽出し、再研磨することにより、次工程への不良流出を防止できる。さらに、研磨中の研磨パッドの表面温度の平均値もしくは積分値がある一定の値に到達するまで研磨することにより、通常よりも研磨パッドの表面温度が低い場合においても、前記研磨処理中の研磨パッドの表面温度の平均値および積分値を合わせることにより、必要研磨量を確保でき、終点検出機構として利用でき、製品の残膜異常が発生しない。   As in the present invention, the polishing pad surface temperature during the polishing process is measured, the average value and the integral value of the surface temperature are calculated, and the transition of the average value and the integral value is managed, thereby reducing the polishing rate. An expected wafer can be detected, and by extracting and re-polishing the wafer, defective outflow to the next process can be prevented. Further, by polishing until the average value or integrated value of the surface temperature of the polishing pad being polished reaches a certain value, the polishing during the polishing process is performed even when the surface temperature of the polishing pad is lower than usual. By combining the average value and integral value of the surface temperature of the pad, the required polishing amount can be ensured, and it can be used as an end point detection mechanism, so that no residual film abnormality of the product occurs.

（第１の実施の形態）
以下、本発明における第１の実施の形態について説明する。本発明では、研磨パッドの表面の温度を測定し、常時モニターする。本発明を構成する研磨機構を図１に示す。研磨パッド１２を貼りつけた定盤１１を回転させ、研磨剤１５を供給し、キャリア１４で保持した基盤１３を回転させながら、研磨パッド１２に押し当てて研磨する機構の場合、研磨パッド１２の表面の温度を測定するセンサー１６を備え、接続したモニタリングツール１８により、測定した温度を常時モニターする。研磨パッド１２の表面温度を測定する箇所は、基盤１３と研磨パッド１２が研磨によって接触する面の基盤１３の中心を通る温度測定箇所１７が望ましい。センサー１６は、非接触の放射温度計などを使用する。研磨処理時には、研磨荷重、定盤１１およびキャリア１４の回転により、基盤１３と研磨パッド１２の間に発生した摩擦力により研磨パッド１２の表面温度は増加する。図２に研磨処理時の研磨パッドの表面温度の推移を示す。研磨開始から終了の１処理分の区間２１が繰り返される。設備が正常に動作している場合、研磨処理と研磨処理の間の時間は一定になるが、図３に示すように研磨処理以外で律速する装置の場合や、軽微なトラブルなどで設備が停止した場合、研磨処理と研磨処理の間の時間が正常時では区間３３のようになるが、区間３４のように増加する。このとき、次の研磨処理時間を表す区間３２は、研磨パッドの表面温度が正常時の区間３１よりも低下した状態から研磨が開始される。図４に正常時と異常時の温度変化を示す。正常時の研磨パッド表面の温度プロファイルを示すグラフ４１よりも異常時の研磨パッド表面の温度プロファイルを示すグラフ４２の方が研磨開始時には低い温度になる。図５に１処理分の研磨パッドの表面温度の平均値と研磨レートの関係を示す。研磨パッドの表面温度の平均値が低いと研磨レートも低下する。このことから、パッドの表面温度が低い状態で研磨された被研磨物は、研磨レートが低下し、研磨残りなどの品質異常が発生している可能性がある。 (First embodiment)
Hereinafter, a first embodiment of the present invention will be described. In the present invention, the surface temperature of the polishing pad is measured and constantly monitored. The polishing mechanism constituting the present invention is shown in FIG. In the case of a mechanism in which the surface plate 11 with the polishing pad 12 attached is rotated, the polishing agent 15 is supplied, and the substrate 13 held by the carrier 14 is rotated and pressed against the polishing pad 12 to polish. A sensor 16 for measuring the temperature of the surface is provided, and the measured temperature is constantly monitored by a connected monitoring tool 18. The location where the surface temperature of the polishing pad 12 is measured is preferably a temperature measurement location 17 that passes through the center of the substrate 13 on the surface where the substrate 13 and the polishing pad 12 come into contact with each other by polishing. The sensor 16 uses a non-contact radiation thermometer or the like. During the polishing process, the surface temperature of the polishing pad 12 increases due to the frictional force generated between the substrate 13 and the polishing pad 12 due to the rotation of the polishing load and the surface plate 11 and the carrier 14. FIG. 2 shows the transition of the surface temperature of the polishing pad during the polishing process. The section 21 for one process from the start to the end of the polishing is repeated. If the equipment is operating normally, the time between the polishing processes will be constant, but as shown in Fig. 3, the equipment will stop due to equipment other than the polishing process or a minor trouble. In this case, when the time between the polishing processes is normal, it becomes like section 33, but increases like section 34. At this time, in the section 32 representing the next polishing processing time, polishing is started from a state in which the surface temperature of the polishing pad is lower than that in the section 31 when normal. FIG. 4 shows temperature changes during normal operation and abnormal operation. The graph 42 showing the temperature profile of the polishing pad surface at the time of abnormality is lower in temperature at the start of polishing than the graph 41 showing the temperature profile of the polishing pad surface at the time of normality. FIG. 5 shows the relationship between the average value of the surface temperature of the polishing pad for one treatment and the polishing rate. If the average value of the surface temperature of the polishing pad is low, the polishing rate also decreases. For this reason, there is a possibility that the polishing object is polished with the pad surface temperature being low, and the polishing rate is lowered, and quality anomalies such as polishing residue may occur.

そこで、本発明のパッド表面の温度を測定し、常時モニターすることにより、上記研磨パッドの表面温度の低下を検出し、次に処理した製品を研磨残り発生品として抽出し、別途膜厚測定等の確認を実施した上で必要な対処を実施する。研磨パッド表面温度の低下の判断は、研磨処理中の温度の平均値や積分値を使用し、研磨レートとの相関データより、異常が発生する閾値を設定し、前記閾値を下回った場合に対象となる製品を抽出する。これは、研磨装置画面への表示や通信によるアラーム等の発報により対象の製品が認識できればよい。これにより、異常が発生した製品が次工程に流出することを回避できる。   Therefore, the temperature of the pad surface of the present invention is measured and constantly monitored to detect a decrease in the surface temperature of the polishing pad, and then the processed product is extracted as an unpolished product, and the film thickness is measured separately. Perform necessary actions after confirming the above. The judgment of the decrease in the polishing pad surface temperature is made when the average value or integral value of the temperature during the polishing process is used, and a threshold value for occurrence of abnormality is set from the correlation data with the polishing rate, and the target value falls below the threshold value. Extract the product that becomes. It is sufficient that the target product can be recognized by displaying on the polishing apparatus screen or issuing an alarm such as communication. Thereby, it can avoid that the product which abnormality generate | occur | produced flows out to the following process.

リニア研磨方式の研磨機構の場合における本発明の実施の形態について述べる。図６に示すようなベルトに貼り付けた研磨パッド６１を動作させ、基盤６２を保持したキャリア６３を回転させ、研磨剤６４を供給し、研磨パッド６１に押し当てながら研磨するリニア研磨方式の研磨機構の場合、研磨パッド６１の表面の温度を測定するセンサー６５を備え、接続したモニタリングツール６７により、測定した温度を常時モニターする。研磨パッド６１の表面温度を測定する箇所は、基盤６２と研磨パッド６１が研磨によって接触する面の基盤６２の中心を通る温度測定箇所６６が望ましい。センサー６５は、非接触の放射温度計などを使用する。   An embodiment of the present invention in the case of a linear polishing type polishing mechanism will be described. The polishing pad 61 attached to the belt as shown in FIG. 6 is operated, the carrier 63 holding the base 62 is rotated, the polishing agent 64 is supplied, and polishing is performed while pressing against the polishing pad 61. In the case of the mechanism, a sensor 65 for measuring the temperature of the surface of the polishing pad 61 is provided, and the measured temperature is constantly monitored by a connected monitoring tool 67. The location where the surface temperature of the polishing pad 61 is measured is preferably a temperature measurement location 66 that passes through the center of the substrate 62 on the surface where the substrate 62 and the polishing pad 61 come into contact with each other by polishing. The sensor 65 uses a non-contact radiation thermometer or the like.

（第２の実施の形態）
以下、本発明における第２の実施の形態について説明する。本発明では、図１に示す研磨機構において、研磨パッド表面の温度を測定し、常時モニターし、研磨処理中の温度の平均値や積分値をリアルタイムで算出する。前記研磨処理中の温度の平均値や積分値と研磨レートとの相関データより、必要な研磨量を確保できる平均値や積分値をあらかじめ設定し、設定された平均値および積分値に到達するまで研磨処理を実施する。 (Second Embodiment)
Hereinafter, a second embodiment of the present invention will be described. In the present invention, in the polishing mechanism shown in FIG. 1, the temperature of the polishing pad surface is measured and constantly monitored, and the average value and integrated value of the temperature during the polishing process are calculated in real time. From the correlation data between the average value and integral value of the temperature during the polishing process and the polishing rate, an average value and an integral value that can secure the required polishing amount are set in advance, and until the set average value and integral value are reached. A polishing process is performed.

図７に本実施の形態による研磨パッドの表面温度推移を示す。グラフ７１は正常な状態での温度プロファイルであり、グラフ７２が研磨処理と研磨処理の間の時間が通常よりも増加した場合の温度プロファイルである。区間７３は正常な状態での研磨時間であり、研磨処理開始時に温度が低下した場合には、区間７４の研磨時間であらかじめ設定された温度の積分値に到達するまで研磨処理を実施している。これにより、研磨処理以外で律速した場合や、軽微なトラブルなどで設備が停止した場合に、研磨レートが低下しても必要な研磨量を確保でき、研磨残りなどの異常を発生させないことができる。   FIG. 7 shows changes in the surface temperature of the polishing pad according to the present embodiment. A graph 71 is a temperature profile in a normal state, and a graph 72 is a temperature profile in a case where the time between the polishing processes is increased than usual. A section 73 is a polishing time in a normal state. When the temperature decreases at the start of the polishing process, the polishing process is performed until the integral value of the temperature set in advance by the polishing time in the section 74 is reached. . This makes it possible to secure the necessary amount of polishing even if the polishing rate is reduced, and to prevent abnormalities such as polishing residues from occurring when the rate is controlled by other than the polishing process or when equipment is stopped due to minor troubles. .

本発明は、絶縁膜のCMPなどの被研磨膜が一種類の場合の研磨時間を決定するエンドポイントとして有効であり、研磨処理以外で律速した場合や、軽微なトラブルなどで設備が停止した場合においても、研磨レートの低下分を研磨時間で補うことができ、必要な研磨量を確保できる。また、目標となる温度の平均値および積分値については、あらかじめ設定する方法に加えて、直前に処理された数枚の製品の温度の平均値および積分値をフィードフォワードする方法もある。さらには、本発明の研磨時間を決定する方法をエンドポイントのプログラムおよび記録媒体として使用することにより、品種、工程に合わせてエンドポイントを検出することができる。   The present invention is effective as an end point for determining the polishing time when there is only one type of film to be polished, such as CMP of the insulating film. When the rate is controlled other than the polishing process, or when the equipment stops due to minor troubles, etc. In this case, the decrease in the polishing rate can be compensated by the polishing time, and the necessary polishing amount can be ensured. In addition to the method of setting the target temperature average value and integral value in advance, there is also a method of feeding forward the temperature average value and integral value of several products processed immediately before. Furthermore, by using the method for determining the polishing time of the present invention as an end point program and a recording medium, the end point can be detected according to the type and process.

（第３の実施の形態）
以下、本発明における第３の実施の形態について説明する。本発明では、研磨ユニットにおいて、研磨処理と研磨処理の間に発生する搬送待ち時間を常時モニターする。前記研磨処理と研磨処理間の待ち時間が増加すると、前述したように研磨パッドの表面温度が低下し、研磨残りなどの異常が発生する。研磨処理と研磨処理の間に発生する搬送待ち時間と研磨レートの関係を図８に示す。搬送待ち時間の増加に伴い、研磨レートが低下する。そこで、研磨処理と研磨処理の間に発生する搬送待ち時間を常時モニターし、上記搬送待ち時間の増加を検出し、次に処理した製品を研磨残り発生品として抽出し、別途膜厚測定等の確認を実施した上で必要な対処を実施する。上記搬送待ち時間の増加の判断は、研磨レートとの相関データより、異常が発生する閾値を設定し、前記閾値を上回った場合に対象となる製品を抽出する。これは、研磨装置画面への表示や通信によるアラーム等の発報により対象の製品が認識できればよい。これにより、異常が発生した製品が次工程に流出することを回避できる。 (Third embodiment)
Hereinafter, a third embodiment of the present invention will be described. In the present invention, in the polishing unit, the conveyance waiting time generated between the polishing processes is constantly monitored. When the waiting time between the polishing processes increases, as described above, the surface temperature of the polishing pad decreases, and an abnormality such as a polishing residue occurs. FIG. 8 shows the relationship between the conveyance waiting time and the polishing rate that occur between the polishing processes. As the transfer waiting time increases, the polishing rate decreases. Therefore, the waiting time for transporting between polishing processes is constantly monitored, the increase in the waiting time for transporting is detected, the next processed product is extracted as an unpolished product, and the film thickness is measured separately. Take necessary actions after checking. The determination of the increase in the waiting time for conveyance is performed by setting a threshold value at which an abnormality occurs based on correlation data with the polishing rate, and extracting a target product when the threshold value is exceeded. It is sufficient that the target product can be recognized by displaying on the polishing apparatus screen or issuing an alarm such as communication. Thereby, it can avoid that the product which abnormality generate | occur | produced flows out to the following process.

（第４の実施の形態）
以下、本発明における第４の実施の形態について説明する。本発明では、図１に示す研磨機構において、研磨パッド表面の温度を測定し、常時モニターする。図９に正常時の研磨パッド表面の温度プロファイルを示すグラフ９１と異常時の研磨パッド表面の温度プロファイルを示すグラフ９２を示す。研磨開始直後の前記研磨パッドの表面温度が上昇している区間９３において、表面温度の上昇の傾きすなわち微分値をリアルタイムで算出し、その低下を検出し、対象の製品を研磨残り発生品として抽出し、別途膜厚測定等の確認を実施した上で必要な対処を実施する。研磨開始直後の温度上昇の傾き低下の判断は、事前に取得した研磨レートとの相関データより、異常が発生する閾値を設定し、前記閾値を下回った場合に対象となる製品を抽出する。これは、研磨装置画面への表示や通信によるアラーム等の発報により対象の製品が認識できればよい。これにより、異常が発生した製品が次工程に流出することを回避できる。 (Fourth embodiment)
Hereinafter, a fourth embodiment of the present invention will be described. In the present invention, in the polishing mechanism shown in FIG. 1, the temperature of the polishing pad surface is measured and constantly monitored. FIG. 9 shows a graph 91 showing the temperature profile of the polishing pad surface at normal time and a graph 92 showing the temperature profile of the polishing pad surface at abnormal time. In the section 93 where the surface temperature of the polishing pad is increasing immediately after the start of polishing, the slope of the increase in surface temperature, that is, the differential value is calculated in real time, the decrease is detected, and the target product is extracted as the remaining polishing product. In addition, we will take necessary measures after confirming the film thickness measurement separately. In order to determine the decrease in the slope of the temperature increase immediately after the start of polishing, a threshold value at which an abnormality occurs is set based on the correlation data with the polishing rate acquired in advance, and the target product is extracted when the threshold value is below the threshold value. It is sufficient that the target product can be recognized by displaying on the polishing apparatus screen or issuing an alarm such as communication. Thereby, it can avoid that the product which abnormality generate | occur | produced flows out to the following process.

本発明にかかる研磨パッドの表面温度を測定し、プロセス結果の予測やプロセス時間を決定する半導体製造方法は、半導体ウェハ表面を平坦化するCMP工程において、研磨残りなどの異常発生ウェハの検知や研磨時間を決定するエンドポイント機能として有用である。   The semiconductor manufacturing method for measuring the surface temperature of the polishing pad according to the present invention and determining the prediction of the process result and the process time is performed in the CMP process for flattening the surface of the semiconductor wafer. Useful as an endpoint function to determine time.

本発明の第１の実施の形態における研磨装置の構成を示す図The figure which shows the structure of the grinding | polishing apparatus in the 1st Embodiment of this invention. 本発明の第１の実施の形態における正常時の研磨パッドの表面温度の推移を示す図The figure which shows transition of the surface temperature of the polishing pad at the time of normal in the 1st Embodiment of this invention 本発明の第１の実施の形態における異常発生時の研磨パッドの表面温度の推移を示す図The figure which shows transition of the surface temperature of the polishing pad at the time of abnormality generation in the 1st Embodiment of this invention 本発明の第１の実施の形態における正常時と異常時の研磨パッドの表面温度の推移を示す図The figure which shows transition of the surface temperature of the polishing pad at the time of normal and abnormal in the 1st Embodiment of this invention 本発明の第１の実施の形態における研磨パッドの表面温度の平均値と研磨レートの関係を示す図The figure which shows the relationship between the average value of the surface temperature of the polishing pad and polishing rate in the 1st Embodiment of this invention 本発明の第１の実施の形態におけるリニア駆動方式の研磨装置の構成を示す図The figure which shows the structure of the grinding | polishing apparatus of the linear drive system in the 1st Embodiment of this invention. 本発明の第２の実施の形態における研磨パッドの表面温度の推移を示す図The figure which shows transition of the surface temperature of the polishing pad in the 2nd Embodiment of this invention. 本発明の第３の実施の形態における搬送待機時間と研磨レートとの関係を示す図The figure which shows the relationship between the conveyance waiting time and the polishing rate in the 3rd Embodiment of this invention. 本発明の第４の実施の形態における正常時と異常時の研磨パッドの表面温度の推移を示す図The figure which shows transition of the surface temperature of the polishing pad at the time of normal and abnormal in the 4th Embodiment of this invention 従来技術における研磨機構を示す図Diagram showing the polishing mechanism in the prior art

符号の説明Explanation of symbols

１１ 定盤
１２ 研磨パッド
１３ 基盤
１４ キャリア
１５ 研磨剤
１６ センサー
１７ 温度測定箇所
１８ モニタリングツール
２１ 研磨処理区間
３１ 区間
３２ 区間
３３ 区間
３４ 区間
４１ グラフ
４２ グラフ
６１ 研磨パッド
６２ 基盤
６３ キャリア
６４ 研磨剤
６５ センサー
６６ 温度測定箇所
６７ モニタリングツール
７１ グラフ
７２ グラフ
７３ 区間
７４ 区間
９１ グラフ
９２ グラフ
９３ 区間
１０１ 定盤
１０２ 研磨パッド
１０３ 基盤
１０４ キャリア
１０５ 研磨剤
１０６ センサー
１０７ モニタリングツール DESCRIPTION OF SYMBOLS 11 Surface plate 12 Polishing pad 13 Base 14 Carrier 15 Polishing agent 16 Sensor 17 Temperature measurement location 18 Monitoring tool 21 Polishing process section 31 Section 32 Section 33 Section 34 Section 41 Graph 42 Graph 61 Polishing pad 62 Base 63 Carrier 64 Polishing agent 65 Sensor 66 Temperature Measurement Point 67 Monitoring Tool 71 Graph 72 Graph 73 Section 74 Section 91 Graph 92 Graph 93 Section 101 Surface Plate 102 Polishing Pad 103 Base 104 Carrier 105 Abrasive Agent 106 Sensor 107 Monitoring Tool

Claims (5)

定盤上に貼り付けた研磨パッド表面に研磨剤を供給し、基盤を押し当てながら研磨する機構において、
研磨中の研磨パッドの表面温度を測定する機構を備え、
測定した前記表面温度を収集し、研磨処理期間中の平均値および積分値を算出するユニットを備え、
前記平均値および積分値が事前に設定した基準値を下回った時に研磨された基盤を識別し、
警報を発することを特徴とする研磨方法。 In the mechanism that supplies abrasive to the surface of the polishing pad affixed on the surface plate and polishes while pressing the substrate,
Equipped with a mechanism to measure the surface temperature of the polishing pad during polishing,
A unit that collects the measured surface temperature and calculates an average value and an integral value during the polishing process,
Identify the ground substrate when the mean and integral values are below a preset reference value;
A polishing method characterized by issuing an alarm. 研磨中の研磨パッドの表面温度を測定する機構を備え、測定した前記表面温度を収集し、研磨処理期間中の微分値を算出するユニットを備え、研磨開始直後の前記表面温度の上昇期間において、前記微分値が事前に設定した基準値を下回った時に研磨された基盤を識別し、警報を発することを特徴とする研磨方法。 A mechanism for measuring the surface temperature of the polishing pad during polishing, a unit for collecting the measured surface temperature and calculating a differential value during the polishing process period, in the rising period of the surface temperature immediately after the start of polishing, A polishing method characterized by identifying a polished substrate and issuing an alarm when the differential value falls below a preset reference value. 研磨中の研磨パッドの表面温度を測定する機構を備え、測定した前記表面温度を収集し、研磨処理期間中の平均値および積分値をリアルタイムで算出するユニットを備え、前記平均値および積分値が事前に設定した基準値や直前に研磨処理された１枚もしくは数枚の基盤の平均値および積分値に達するまで研磨することを特徴とする研磨方法。 A mechanism for measuring the surface temperature of the polishing pad during polishing, a unit that collects the measured surface temperature and calculates an average value and an integrated value in a polishing process in real time, and the average value and the integrated value are A polishing method comprising polishing until reaching a reference value set in advance or an average value and an integral value of one or several substrates that have been polished immediately before. 研磨中の研磨パッドの表面温度を測定する機構を備え、測定した前記表面温度を収集し、研磨処理期間中の平均値および積分値をリアルタイムで算出するユニットを備え、前記平均値および積分値が事前に設定した基準値や直前に研磨処理された１枚もしくは数枚の基盤の平均値および積分値に達するまで研磨することを特徴とするプログラムおよび記録媒体。 A mechanism for measuring the surface temperature of the polishing pad during polishing, a unit that collects the measured surface temperature and calculates an average value and an integrated value in a polishing process in real time, and the average value and the integrated value are A program and a recording medium characterized by polishing until reaching a reference value set in advance or an average value and an integral value of one or several substrates that have been polished immediately before. 研磨処理ユニットにおいて、基盤の研磨処理と研磨処理の間に発生する基盤の搬送待機時間を計測する機構を有し、事前に設定した基準値を上回った場合に次に研磨された基盤を識別し、警報を発することを特徴とする研磨方法。 The polishing unit has a mechanism that measures the substrate transport waiting time that occurs between substrate polishing processes, and identifies the next polished substrate when it exceeds a preset reference value. A polishing method characterized by issuing an alarm.
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