TW201446387A - Laser shield component, laser process device, and laser illuminating method - Google Patents

Laser shield component, laser process device, and laser illuminating method Download PDF

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TW201446387A
TW201446387A TW103113957A TW103113957A TW201446387A TW 201446387 A TW201446387 A TW 201446387A TW 103113957 A TW103113957 A TW 103113957A TW 103113957 A TW103113957 A TW 103113957A TW 201446387 A TW201446387 A TW 201446387A
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line beam
laser light
shape
shielding member
laser
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TW103113957A
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TWI647046B (en
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Suk-Hwan Chung
Miki Sawai
Junichi Shida
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Japan Steel Works Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70Auxiliary operations or equipment
    • B23K26/702Auxiliary equipment
    • B23K26/706Protective screens

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  • Plasma & Fusion (AREA)
  • Recrystallisation Techniques (AREA)
  • Laser Beam Processing (AREA)
  • Nonlinear Science (AREA)
  • Thin Film Transistor (AREA)
  • Ceramic Engineering (AREA)
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Abstract

The invention divides a line beam in a manner ensuring a part avoiding illumination to a processed object, and the divided line beam can illuminate the processed object. The invention disposes a part or all of a shielding component to enable relative movement relative to a laser light path in a line beam shape, and along with the movement, the shape adjustment of the divided line beam can be performed to obtain the line beam. The line beam is obtained by dividing the line beam according to a shape determined by a moving position of the shielding component, and the line beam can illuminate the processed object without replacement of an optical system or adjusting time, and the laser will not be illuminated to a portion forming an obstacle for illumination or a portion unwanted for illumination. Therefore, necessary processes can be performed with a good productivity and a good quality.

Description

雷射光遮蔽部材、雷射處理裝置以及雷射光照射方法 Laser light shielding member, laser processing device, and laser light irradiation method

本發明是有關於一種將線光束(line beam)形狀的雷射光分割而獲得多個線光束的雷射光遮蔽部材、將線光束分割而對被處理體進行處理的雷射處理裝置以及雷射光照射方法。 The present invention relates to a laser light shielding member that divides a line beam shape of laser light to obtain a plurality of line beams, a laser processing device that divides a line beam and processes the object to be processed, and laser light irradiation. method.

對液晶顯示器或有機電致發光(electroluminescence,EL)顯示器中使用的加工對象物,使用線光束來進行雷射加工的方法已為人所知。 A method of performing laser processing using a line beam for a workpiece to be used in a liquid crystal display or an organic electroluminescence (EL) display is known.

此種雷射加工中,如下加工已為人所知,即,例如,對僅形成於所需的位置的穩定且高品質的半導體膜(矽膜),一邊將聚集成線狀或矩形狀(帶狀)的連續振盪雷射光導通/斷開,一邊進行掃描並退火,而改質成帶狀多結晶矽膜(參照專利文獻1)。 In such laser processing, it is known that, for example, a stable and high-quality semiconductor film (ruthenium film) formed only at a desired position is aggregated into a linear or rectangular shape ( The strip-shaped continuous oscillation laser light is turned on and off, and is scanned and annealed to be modified into a strip-shaped polycrystalline tantalum film (see Patent Document 1).

而且,在應用至玻璃上系統(system on glass,SOG)等時,如下方法已為人所知,即,為了以高水準將薄膜電晶體(Thin Film Transistor,TFT)的電晶體特性均質化,尤其在周邊電路區域實現移動度優異且可高速驅動的TFT,而在玻璃基板上將a-Si膜2 圖案化為線狀(帶(ribbon)狀)、或島狀(島嶼(island)狀),對a-Si膜的表面或玻璃基板的背面,從CW雷射3向箭頭的方向照射掃描在時間上連續輸出的能量光束,而將a-Si膜結晶化(參照專利文獻2、圖1(a)、圖1(b))。 Further, when applied to a system on glass (SOG) or the like, a method is known in which, in order to homogenize a transistor characteristic of a thin film transistor (TFT) at a high level, In particular, a TFT having excellent mobility and high-speed driving is realized in a peripheral circuit region, and an a-Si film 2 is formed on a glass substrate. Patterned in a line shape (ribbon shape), or island shape (island shape), on the surface of the a-Si film or the back surface of the glass substrate, scanning from the CW laser 3 in the direction of the arrow in time The a-Si film is crystallized by continuously outputting the energy beam (see Patent Document 2, FIG. 1(a), FIG. 1(b)).

[現有技術文獻] [Prior Art Literature]

[專利文獻] [Patent Literature]

[專利文獻1]日本專利2004-151668號公報 [Patent Document 1] Japanese Patent No. 2004-151668

[專利文獻2]日本專利2005-354087號公報 [Patent Document 2] Japanese Patent Publication No. 2005-354087

如上述般的先前的雷射退火裝置中,在將雷射光照射至雷射加工對象物而進行雷射退火處理時,為了根據雷射加工對象物的大小來調整雷射光的光束長度,並且將在光束長軸的端部產生的能量密度不均勻的部分加以去除,而在長軸方向上使用光束遮蔽材。 In the above-described laser annealing apparatus, when the laser beam is irradiated to the laser processing target and the laser annealing treatment is performed, the beam length of the laser beam is adjusted in accordance with the size of the laser processing object, and The portion of the energy density unevenness generated at the end of the long axis of the beam is removed, and the beam shielding material is used in the long axis direction.

而且,隨著基板變得大型,光束尺寸亦增大,藉由減少掃描次數來提高生產性。 Moreover, as the substrate becomes large, the beam size also increases, and productivity is improved by reducing the number of scans.

然而,基板上有不能進行照射的部分,例如有如下情況:若照射雷射光則存在退色的部分。亦有如下情況:若被雷射光照射則產生雜質等問題。因此,雖然有為了避開對該部分的照射而縮短雷射光的光束長度來加以應對的方法,但存在生產性下降的問 題。 However, there is a portion on the substrate where irradiation is impossible, and for example, there is a case where there is a discolored portion when laser light is irradiated. There are also cases where impurities are generated if exposed to laser light. Therefore, although there is a method of reducing the beam length of the laser light in order to avoid the irradiation of the portion, there is a problem that the productivity is lowered. question.

本發明是為了解決如上述般的先前的問題而完成的,其目的之一在於提供以能夠對被處理體確保避開照射的部分的方式將線光束分割,且可將經分割的線光束照射至被處理體的雷射光遮蔽部材,雷射處理裝置以及雷射光照射方法。 The present invention has been made to solve the above problems as described above, and an object of the invention is to provide a line beam splitting in such a manner as to ensure a portion to be shielded from being irradiated to a target object, and to illuminate the divided line beam Laser light shielding member to the object to be processed, laser processing device, and laser light irradiation method.

亦即,本發明的雷射光遮蔽部材中,第1本發明為一種雷射光遮蔽部材,對線光束形狀的一部分雷射光的透過進行遮蔽,形成對被處理體進行照射的多個經分割的線光束,上述雷射光遮蔽部材的特徵在於:該遮蔽部材設置成一部分或全部能夠相對於上述線光束形狀的雷射光的光路進行相對移動,伴隨上述移動,能夠進行經分割的上述線光束的形狀調整。 In the laser light shielding member of the present invention, the first aspect of the invention is a laser light shielding member that shields a part of the laser light from the linear beam shape and forms a plurality of divided lines that illuminate the object to be processed. The light beam is characterized in that the shielding member is provided so that part or all of the shielding member can be relatively moved with respect to the optical path of the linear beam shape, and the shape adjustment of the divided line beam can be performed in accordance with the movement. .

第2本發明的雷射光遮蔽部材的特徵在於:於上述第1本發明中,被賦予伴隨上述移動而遮蔽形狀發生變化的形狀。 In the first aspect of the invention, the laser light shielding member according to the second aspect of the invention is characterized in that the shape of the shielding is changed in accordance with the movement.

第3本發明的雷射光遮蔽部材的特徵在於:於上述第2本發明中,被賦予伴隨上述移動而遮蔽形狀階段性地或連續地發生變化的形狀。 According to a second aspect of the present invention, in the second aspect of the invention, the shape of the shielding shape is changed stepwise or continuously in accordance with the movement.

第4本發明的雷射光遮蔽部材的特徵在於:於上述第1本發明至第3本發明中的任一者中,上述移動包含滑動移動或/及旋轉移動。 According to a fourth aspect of the present invention, in the laser light shielding member of the first aspect of the invention, the movement includes a sliding movement and/or a rotation movement.

第5本發明的雷射光遮蔽部材的特徵在於:於上述第1本發 明至第4本發明中的任一者中,上述線光束的形狀調整為上述線光束的長軸方向的長度調整。 The laser light shielding member according to a fifth aspect of the present invention is characterized by the first present invention In any one of the fourth inventions, the shape of the line beam is adjusted to a length adjustment of the line beam in the longitudinal direction.

第6本發明的雷射處理裝置的特徵在於包括:雷射光源,輸出雷射光;光學系統,將上述雷射光整形為線光束形狀並導引至被處理體;被處理體保持部,保持上述被處理體以供上述雷射光的照射;以及如第1本發明至第5本發明中的任一者中所述的雷射光遮蔽部材, 上述雷射光遮蔽部材配置成:在設為上述線光束形狀的雷射光被導波且到達保持於上述被處理體保持部的上述被處理體的光路上,對一部分上述線光束的透過進行遮蔽而能夠形成多個經分割的線光束。 A laser processing apparatus according to a sixth aspect of the present invention includes: a laser light source that outputs laser light; and an optical system that shapes the laser light into a line beam shape and guides it to a target object; and the processed object holding portion holds the above The object to be processed is irradiated with the above-described laser light; and the laser light shielding member according to any one of the first to fifth inventions, The laser beam shielding member is disposed such that the laser light having the linear beam shape is guided to the optical path of the object to be processed held by the object holding portion, and the transmission of a part of the line beam is blocked. A plurality of divided line beams can be formed.

第7本發明的雷射處理裝置的特徵在於:於上述第6本發明中,上述遮蔽部材能夠進行滑動移動或/及旋轉移動。 According to a seventh aspect of the invention, in the laser processing apparatus of the present invention, the shielding member is capable of sliding movement and/or rotational movement.

第8本發明的雷射處理裝置的特徵在於:於上述第6本發明或第7本發明中,上述被處理體具有積層構造,進行上述被處理體的剝離加工。 According to a sixth aspect of the invention, in the sixth aspect of the invention, in the sixth aspect of the invention, the object to be processed has a laminated structure, and the object to be processed is subjected to a peeling process.

第9本發明的雷射處理裝置的特徵在於:於上述第6本發明或第7本發明中,上述被處理體為具有半導體層的基板,進行上述半導體層的結晶化或結晶的活化。 According to a ninth aspect of the invention, in the sixth aspect of the invention, the object to be processed is a substrate having a semiconductor layer, and the semiconductor layer is crystallized or crystallized.

第10本發明的雷射處理裝置的特徵在於:於上述第6本發明至第9本發明中的任一者中,上述被處理體為塑膠基板。 In a laser processing apparatus according to a tenth aspect of the present invention, the object to be processed according to the sixth aspect of the present invention, wherein the object to be processed is a plastic substrate.

第11本發明的雷射光照射方法的特徵在於:將雷射光整形為 線光束形狀,在上述線光束的光路上,配置一部分或全部能夠移動的遮蔽部材並對一部分上述線光束的透過進行遮蔽,形成多個經分割的線光束,將已進行上述分割的線光束照射至被處理體,所述經分割的線光束的形狀是對應根據上述移動的上述配置位置而決定。 The laser light irradiation method of the eleventh invention is characterized in that the laser light is shaped into In the shape of the line beam, a part or all of the movable shielding member is disposed on the optical path of the line beam, and a part of the line beam is shielded to form a plurality of divided line beams, and the line beam that has undergone the division is irradiated To the object to be processed, the shape of the divided line beam is determined in accordance with the above-described arrangement position according to the above movement.

根據本發明,藉由遮蔽部材將線光束分割,並將經分割的線光束照射至被處理體。遮蔽部材可藉由移動將分割後的線光束的形狀加以變更,從而可獲得多個針對被處理體的照射圖案。 According to the invention, the line beam is split by the shielding member, and the divided line beam is irradiated to the object to be processed. The shielding member can be changed by changing the shape of the divided linear light beam, thereby obtaining a plurality of irradiation patterns for the object to be processed.

另外,作為被處理體,以照射線光束的雷射光而進行處理的各種物體作為對象,其目的亦可列舉剝離或結晶化、活化等各種目的。為了實現上述目的,作為被處理體,可例示具有半導體層的玻璃基板或塑膠基板等。 In addition, as the object to be processed, various objects to be treated by irradiating the laser light of the line beam are used, and the object thereof is various purposes such as peeling, crystallization, and activation. In order to achieve the above object, a glass substrate or a plastic substrate having a semiconductor layer can be exemplified as the object to be processed.

而且,被整形為線光束形狀的雷射光並不限定為脈衝振盪雷射光、連續振盪雷射光等,雷射的種類亦為氣體雷射、固體雷射、半導體雷射等,並不作特別限定。 Further, the laser light that is shaped into a line beam shape is not limited to pulse-oscillation laser light, continuous-oscillation laser light, or the like, and the type of the laser is also a gas laser, a solid laser, or a semiconductor laser, and is not particularly limited.

遮蔽部材藉由移動而遮蔽形狀發生變化,可變更經分割後的線光束形狀。藉由移動而變化的遮蔽形狀可隨移動而連續地變化,而且可階段性地變化,或亦可為連續變化與階段性變化的組合。 The shielding member changes its shape by movement, and the shape of the divided line beam can be changed. The shadow shape that changes by movement can be continuously changed with the movement, and can be changed stepwise, or can be a combination of continuous change and phase change.

另外,遮蔽部材的遮蔽除完全防止雷射光的透過之外,亦能夠以使透過率降低而排除被處理體的照射面的影響的程度而使雷射光透過。 In addition, the shielding of the shielding member can completely prevent the transmission of the laser light, and can also transmit the laser light to the extent that the transmittance is lowered to remove the influence of the irradiation surface of the object to be processed.

而且,遮蔽部材的移動可藉由滑動移動或旋轉移動等來進行,在旋轉移動中亦可藉由多個旋轉軸而旋轉。滑動移動除沿遮蔽部材的面方向移動外,亦可在與遮蔽部材的面方向交叉的方向上移動。而且,亦可將上述各種移動加以組合。 Further, the movement of the shielding member can be performed by a sliding movement, a rotational movement, or the like, and can be rotated by a plurality of rotating shafts during the rotational movement. The sliding movement may be moved in a direction crossing the plane direction of the shielding member, in addition to moving in the surface direction of the shielding member. Moreover, the above various movements can also be combined.

遮蔽部材的移動可藉由手動、驅動中的任一者來進行,而且,亦可進行藉由控制實現的自動移動。另外,遮蔽部材的移動只要可相對於線光束的光路進行相對移動即可,還可為藉由線光束的移動而進行遮蔽部材的相對移動。 The movement of the shielding member can be performed by either manual or driving, and automatic movement by control can also be performed. Further, the movement of the shielding member may be relative to the optical path of the linear beam, and the relative movement of the shielding member may be performed by the movement of the linear beam.

如以上說明般,根據本申請案發明,獲得如下的線光束,即,該線光束是以根據遮蔽部材的移動位置而決定的形狀將線光束分割所得,可將該線光束照射至被處理體,且不需要更換光學系統或調整時間等,且不會將雷射光照射至對照射造成障礙的部位或不想進行照射的部位等而將線光束照射至被處理體,從而可生產性佳且品質佳地進行所需的加工。 As described above, according to the invention of the present application, the line beam is obtained by dividing the line beam by a shape determined according to the moving position of the shielding member, and the line beam can be irradiated to the object to be processed. Moreover, it is not necessary to replace the optical system, adjust the time, etc., and the laser beam is irradiated to the object to be processed without irradiating the laser beam to the portion where the irradiation is hindered or the portion where the irradiation is not desired, so that the productivity is good and the quality is good. Good to carry out the required processing.

1‧‧‧雷射處理裝置 1‧‧‧ Laser processing unit

2‧‧‧處理室 2‧‧‧Processing room

3‧‧‧掃描裝置 3‧‧‧Scanning device

4‧‧‧基台 4‧‧‧Abutment

6‧‧‧導入窗 6‧‧‧Introduction window

7‧‧‧控制部 7‧‧‧Control Department

10‧‧‧雷射光源 10‧‧‧Laser light source

11‧‧‧衰減器 11‧‧‧Attenuator

15‧‧‧雷射光 15‧‧‧Laser light

12‧‧‧光學系統 12‧‧‧Optical system

12a‧‧‧反射鏡 12a‧‧‧Mirror

12b‧‧‧均束器 12b‧‧‧both beamer

12c‧‧‧反射鏡 12c‧‧‧Mirror

12d‧‧‧聚光透鏡 12d‧‧‧ Concentrating lens

13、13a、13b、13c、13d、13e、13f、13g‧‧‧遮蔽部材 13, 13a, 13b, 13c, 13d, 13e, 13f, 13g‧‧‧ ‧ shielding materials

130、130a、130b、130c、130d、131d、130e、130f、130g‧‧‧遮蔽部 130, 130a, 130b, 130c, 130d, 131d, 130e, 130f, 130g‧‧‧

20‧‧‧長軸端部遮蔽部 20‧‧‧Long-axis end shelter

100‧‧‧半導體基板 100‧‧‧Semiconductor substrate

100a‧‧‧玻璃基板 100a‧‧‧glass substrate

100b‧‧‧非晶質的矽膜 100b‧‧‧Amorphous film

110‧‧‧被處理部 110‧‧‧Processed Department

110a‧‧‧未照射區域 110a‧‧‧Unilluminated area

111‧‧‧處理部 111‧‧‧Processing Department

150、151‧‧‧線光束 150, 151‧‧‧ line beam

150a、151a‧‧‧平坦部 150a, 151a‧‧‧ flat

150b、151b‧‧‧斜度部 150b, 151b‧‧‧ slope section

圖1是表示包含作為本發明的一實施形態的遮蔽部材的雷射處理裝置的概要的圖。 FIG. 1 is a view showing an outline of a laser processing apparatus including a shielding member according to an embodiment of the present invention.

圖2(a)、圖2(b)是表示作為本發明的一實施形態的分割前後的線光束的長軸方向剖面的光束輪廓的圖。 2(a) and 2(b) are diagrams showing a beam profile of a cross section in the longitudinal direction of a line beam before and after division as an embodiment of the present invention.

圖3(a)、圖3(b)是表示作為本發明的一實施形態的遮蔽 部材附近的光路的概略圖,是表示經分割的光束輪廓的概略圖,且是表示半導體基板的平面的圖。 3(a) and 3(b) show shielding as an embodiment of the present invention. A schematic view of the optical path in the vicinity of the member is a schematic view showing a contour of the divided light beam, and is a view showing a plane of the semiconductor substrate.

圖4(a)、圖4(b)是表示作為本發明的一實施形態的遮蔽部材的詳細形狀的平面圖以及正面圖。 4(a) and 4(b) are a plan view and a front view showing a detailed shape of a shielding member according to an embodiment of the present invention.

圖5(a)~圖5(d)是表示伴隨作為本發明的一實施形態的遮蔽部材的移動的遮蔽形狀的變化的平面圖以及正面圖。 5(a) to 5(d) are plan and front views showing changes in the shielding shape accompanying the movement of the shielding member according to the embodiment of the present invention.

圖6是表示作為本發明的一實施形態的遮蔽部材的變更例的平面圖。 Fig. 6 is a plan view showing a modified example of the shielding member according to the embodiment of the present invention.

圖7是表示作為本發明的一實施形態的遮蔽部材的另一變更例的平面圖。 Fig. 7 is a plan view showing another modified example of the shielding member according to the embodiment of the present invention.

圖8是表示作為本發明的一實施形態的遮蔽部材的又一變更例的平面圖。 Fig. 8 is a plan view showing still another modification of the shielding member according to the embodiment of the present invention.

圖9是表示作為本發明的一實施形態的遮蔽部材的又一變更例的平面圖。 Fig. 9 is a plan view showing still another modification of the shielding member according to the embodiment of the present invention.

圖10是表示作為本發明的一實施形態的遮蔽部材的又一變更例的正面圖。 FIG. 10 is a front elevational view showing still another modification of the shielding member according to the embodiment of the present invention.

圖11是表示作為本發明的一實施形態的遮蔽部材的又一變更例的正面圖。 Fig. 11 is a front elevational view showing still another modification of the shielding member according to the embodiment of the present invention.

圖12是表示作為本發明的一實施形態的遮蔽部材的又一變更例的平面圖。 Fig. 12 is a plan view showing still another modification of the shielding member according to the embodiment of the present invention.

圖13是表示先前的雷射處理裝置的長軸端部遮蔽部附近的概略圖以及光束輪廓的概要的圖。 FIG. 13 is a schematic view showing a vicinity of a long-axis end shielding portion of the conventional laser processing apparatus and an outline of a beam profile.

以下,基於圖1對包括本發明的一實施形態的遮蔽部材的雷射處理裝置進行說明。 Hereinafter, a laser processing apparatus including a shielding member according to an embodiment of the present invention will be described based on Fig. 1 .

雷射處理裝置1包括處理室2,在處理室2內設置著掃描裝置3。掃描裝置3上設置著基台4,基台4藉由掃描裝置3可沿X方向(掃描方向)移動,基台4亦可進而向Y方向移動。 The laser processing apparatus 1 includes a processing chamber 2 in which a scanning device 3 is disposed. The scanning device 3 is provided with a base 4, and the base 4 is movable in the X direction (scanning direction) by the scanning device 3, and the base 4 can be further moved in the Y direction.

而且,處理室2中設置著從外部導入線光束的導入窗6。 Further, the processing chamber 2 is provided with an introduction window 6 for introducing a line beam from the outside.

雷射處理時,在基台4上設置著半導體基板100,該半導體基板100是在玻璃基板100a等上形成非晶質的矽膜100b等而成。半導體基板100相當於被處理體。而且,被處理體並不限定於半導體基板100,例如,可將在塑膠基板上形成著半導體膜等而成者等作為被處理體。 In the laser processing, the semiconductor substrate 100 is formed on the base 4, and the semiconductor substrate 100 is formed by forming an amorphous ruthenium film 100b or the like on the glass substrate 100a or the like. The semiconductor substrate 100 corresponds to a target object. In addition, the object to be processed is not limited to the semiconductor substrate 100. For example, a semiconductor film or the like can be formed on the plastic substrate as a target object.

另外,本實施形態的雷射處理裝置,是作為關於藉由雷射處理將非晶質膜結晶化的雷射退火處理的裝置而加以說明,但作為本申請案發明,雷射處理的內容並不限定於此,例如,亦可將非單晶的半導體膜單晶化,或進行結晶半導體膜的改質。而且,還可進行被處理體的剝離。 Further, the laser processing apparatus according to the present embodiment is described as a laser annealing treatment for crystallizing an amorphous film by laser processing. However, as the invention of the present application, the contents of the laser processing are The present invention is not limited thereto. For example, the non-single-crystal semiconductor film may be single-crystallized or the crystalline semiconductor film may be modified. Moreover, peeling of the object to be processed can also be performed.

在處理室2的外部設置著雷射光源10。雷射光源10可輸出脈衝振盪雷射光、連續振盪雷射光中的任一雷射光,但本發明並不限定上述中的任一個。 A laser light source 10 is disposed outside the processing chamber 2. The laser light source 10 can output any one of pulsed oscillating laser light and continuous oscillating laser light, but the present invention is not limited to any of the above.

本實施形態中,雷射光源10輸出脈衝狀的雷射光15。雷射光15視需要而利用衰減器(attenuator)11調整能量密度,並由包含 反射鏡12a、均束器(homogenizer)12b、反射鏡12c、聚光透鏡12d等的光學系統12整形或偏向為線光束形狀等。另外,構成光學系統12的光學部材並不限定為上述,可包括各種透鏡、鏡面、導波部等。獲得藉由上述光學系統12而光束剖面形狀成為線狀的線光束150。線光束150的尺寸不作特別限定,作為被處理體表面上的形狀,可例示例如短軸寬度為0.155mm~0.450mm、長軸寬度為370mm~1300mm。 In the present embodiment, the laser light source 10 outputs pulsed laser light 15. The laser light 15 adjusts the energy density using an attenuator 11 as needed, and includes The optical system 12 of the mirror 12a, the homogenizer 12b, the mirror 12c, the collecting lens 12d, and the like are shaped or deflected into a line beam shape or the like. Further, the optical member constituting the optical system 12 is not limited to the above, and may include various lenses, mirrors, waveguides, and the like. A line beam 150 whose beam cross-sectional shape is linear by the optical system 12 described above is obtained. The size of the line beam 150 is not particularly limited, and examples of the shape on the surface of the object to be processed include, for example, a short axis width of 0.155 mm to 0.450 mm and a major axis width of 370 mm to 1300 mm.

而且,在聚光透鏡12d與導入窗6之間配置著:遮蔽部材13,位於線光束150的光路上,將線光束150分割並整形為多個線光束;以及長軸端部遮蔽部20,遮蔽線光束150的長軸端部。遮蔽部材13與長軸端部遮蔽部20可成為一體,而且,亦可分開構成。 Further, a shielding member 13 is disposed between the collecting lens 12d and the introduction window 6, and is positioned on the optical path of the line beam 150 to divide and shape the line beam 150 into a plurality of line beams; and the long-axis end shielding portion 20, The long axis end of the line beam 150 is shielded. The shielding member 13 and the long-axis end shielding portion 20 may be integrated, and may be configured separately.

遮蔽部材13可相對於線光束150的光路移動,且可藉由手動進行移動位置調整或/及藉由驅動部進行移動位置調整。移動可藉由相對於上述光路相對地滑動移動或旋轉移動來進行,而且,亦可為將該些加以組合者。遮蔽部材13可退避至線光束150的光路外且在遮蔽線光束150時移動至線光束150的光路內,亦可僅在光路內移動。本實施形態中,在光學系統12與導入窗6之間配置著遮蔽部材13,亦可構成為使遮蔽部材13位於導入窗到被處理體之間。 The shielding member 13 is movable relative to the optical path of the line beam 150, and the movement position adjustment can be performed manually or/or the movement position can be adjusted by the driving portion. The movement can be performed by sliding or rotating relative to the optical path, and it is also possible to combine the above. The shielding member 13 can be retracted to the outside of the optical path of the line beam 150 and moved into the optical path of the line beam 150 when the line beam 150 is shielded, or can be moved only in the optical path. In the present embodiment, the shielding member 13 is disposed between the optical system 12 and the introduction window 6, and the shielding member 13 may be disposed between the introduction window and the object to be processed.

而且,雷射處理裝置1中包括掃描裝置3、遮蔽部材13的驅動部(未圖示)、控制雷射光源10等的控制部7。控制部7 包含中央處理單元(Central Processing Unit,CPU)或使其運行的程式、記憶部等。 Further, the laser processing apparatus 1 includes a scanner unit 3, a drive unit (not shown) for shielding the member 13, and a control unit 7 for controlling the laser light source 10 and the like. Control unit 7 A central processing unit (CPU) or a program, a memory unit, etc. that are operated by a central processing unit (CPU).

然後,對雷射處理裝置1的動作進行說明。 Next, the operation of the laser processing apparatus 1 will be described.

雷射光源10藉由控制部7的控制而以規定的重複頻率受到脈衝振盪,以規定輸出而輸出雷射光15。雷射光15例如例示波長為400nm以下、脈衝半值寬為200ns以下者。然而,本發明並不限定於該些。 The laser light source 10 is pulse-oscillated at a predetermined repetition frequency under the control of the control unit 7, and outputs the laser light 15 at a predetermined output. The laser light 15 is exemplified by a wavelength of 400 nm or less and a pulse half value width of 200 ns or less. However, the invention is not limited to these.

雷射光15利用由控制部7控制的衰減器11來調整脈衝能量密度。衰減器11設定為規定的衰減率,以在對矽膜100b的照射面上獲得最適合於結晶化的照射脈衝能量密度的方式來調整衰減率。例如可在將非晶質的矽膜100b結晶化等的情況下,以在該照射面上能量密度為250mJ/cm2~500mJ/cm2的方式進行調整。 The laser light 15 is adjusted by the attenuator 11 controlled by the control unit 7 to adjust the pulse energy density. The attenuator 11 is set to a predetermined attenuation rate to adjust the attenuation rate such that the irradiation pulse energy density most suitable for crystallization is obtained on the irradiation surface of the ruthenium film 100b. For example, when the amorphous ruthenium film 100b is crystallized or the like, the energy density on the irradiation surface is adjusted to be 250 mJ/cm 2 to 500 mJ/cm 2 .

已透過衰減器11的雷射光15由光學系統12整形為線光束形狀,且使短軸寬度聚光而成為線光束150。線光束150例如整形為在矽膜100b上長軸側的長度為370mm~1300mm,短軸側的長度為100μm~500μm。 The laser light 15 that has passed through the attenuator 11 is shaped into a line beam shape by the optical system 12, and the short axis width is concentrated to become the line beam 150. The line beam 150 is shaped, for example, such that the length on the long axis side of the ruthenium film 100b is 370 mm to 1300 mm, and the length on the short axis side is 100 μm to 500 μm.

線光束150如圖2(a)、圖2(b)的長軸方向剖面光束輪廓所示,包括:平坦部150a,相對於最大能量強度為96%以上;以及斜度(steepness)部150b,位於長軸方向的兩端部,具有比上述平坦部150a小的能量強度,且朝向外側而能量強度逐漸降低。斜度部150b可設為最大強度的10%~90%的範圍的區域。 As shown in the long-axis cross-sectional beam profile of FIGS. 2(a) and 2(b), the line beam 150 includes a flat portion 150a having a maximum energy intensity of 96% or more, and a steepness portion 150b. Both end portions in the long axis direction have a smaller energy intensity than the flat portion 150a, and the energy intensity gradually decreases toward the outside. The slope portion 150b can be set in a range of 10% to 90% of the maximum intensity.

圖13表示先前的雷射退火處理裝置的光路的概要。該 雷射處理裝置中,亦與上述實施形態的雷射處理裝置1同樣地包括反射鏡12c、聚光透鏡12d等光學系統,在聚光透鏡12d與未圖示的導入窗之間的光路上,配置著遮蔽線光束150的長軸端部的長軸端部遮蔽部20。藉由長軸端部遮蔽部20將線光束的長軸端部切割而可減小線光束150的斜度部150b的傾斜。圖13中一併表示長軸端部已被切割的線光束150的光束輪廓。 Fig. 13 is a view showing an outline of an optical path of a conventional laser annealing treatment apparatus. The Similarly to the laser processing apparatus 1 of the above-described embodiment, the laser processing apparatus includes an optical system such as a mirror 12c and a collecting lens 12d, and an optical path between the collecting lens 12d and an introduction window (not shown). The long-axis end shield portion 20 of the long-axis end portion of the shielded-line beam 150 is disposed. The inclination of the slope portion 150b of the line beam 150 can be reduced by cutting the long-axis end portion of the line beam by the long-axis end shielding portion 20. Also shown in Fig. 13 is the beam profile of the line beam 150 whose long axis end has been cut.

本實施形態中,利用控制部7來控制遮蔽部材13的移動,獲得將線光束150的一部分遮蔽並分割而成的線光束。 In the present embodiment, the control unit 7 controls the movement of the shielding member 13, and obtains a line beam in which a part of the line beam 150 is shielded and divided.

圖3(a)、圖3(b)表示上述例。已通過遮蔽部材13以及長軸端部遮蔽部20的線光束150的長軸方向端部被長軸端部遮蔽部20所遮蔽,並且平坦部的一部分被在線光束150的長軸方向上隔開間隔而定位的遮蔽部材13的遮蔽部130所遮蔽,從而獲得長軸長度變短的多個經分割的線光束151,該線光束151被照射至半導體基板100。 3(a) and 3(b) show the above examples. The long-axis direction end portion of the line beam 150 that has passed through the shielding member 13 and the long-axis end portion shielding portion 20 is shielded by the long-axis end portion shielding portion 20, and a part of the flat portion is separated by the long-axis direction of the line beam 150. The shielding portion 130 of the shielding member 13 positioned at intervals is shielded, thereby obtaining a plurality of divided line beams 151 whose length of the long axis is shortened, and the line beam 151 is irradiated onto the semiconductor substrate 100.

圖3(a)中一併表示經分割的線光束151的光束輪廓。更詳細的光束輪廓表示於圖2(b)中。就線光束151而言,在各線光束151的每一個中具有平坦部151a與長軸方向兩側的斜度部151b,相鄰的平坦部151a彼此具有與遮蔽部130的間隔相應的間隔。 The beam profile of the divided line beam 151 is shown together in Fig. 3(a). A more detailed beam profile is shown in Figure 2(b). In the case of the line beam 151, each of the line beams 151 has a flat portion 151a and a slope portion 151b on both sides in the longitudinal direction, and the adjacent flat portions 151a have intervals corresponding to the interval of the shield portion 130.

而且,圖3(b)表示被處理部110縱橫隔開間隔而被分配的半導體基板100的平面圖。線光束151以具有與被處理部110的寬度(圖中的左右方向)一致的長軸長度的方式被分割。因此, 依據被處理部110的排列而在遮蔽部材13上排列遮蔽部130。 Further, FIG. 3(b) is a plan view showing the semiconductor substrate 100 to be distributed by the processing unit 110 at intervals. The line beam 151 is divided so as to have a major axis length that matches the width of the processed portion 110 (the horizontal direction in the drawing). therefore, The shielding portion 130 is arranged on the shielding member 13 in accordance with the arrangement of the processed portions 110.

雷射處理裝置1中,可一邊以規定的掃描速度使矽膜100b移動,一邊藉由照射線光束151而依據被處理部110的排列來進行線光束151的重疊(overlap)照射。照射規定時間後,將雷射光的照射短時間斷開(OFF),並再次照射雷射光,藉此可在掃描方向上確保未照射區域110a。藉由重複上述步驟,以被處理部110以外不照射雷射光的方式對半導體基板100進行處理,從而獲得呈島狀分佈的處理部111。 In the laser processing apparatus 1, the reticle 100b can be moved at a predetermined scanning speed, and the line beam 151 is irradiated by the irradiation of the line beam 151 in accordance with the arrangement of the processed portion 110. After the irradiation for a predetermined period of time, the irradiation of the laser light is turned off (OFF) for a short time, and the laser light is irradiated again, whereby the unirradiated area 110a can be secured in the scanning direction. By repeating the above steps, the semiconductor substrate 100 is processed so as not to irradiate the laser light other than the processed portion 110, thereby obtaining the processing portion 111 distributed in an island shape.

而且,遮蔽部材13可藉由移動而變更遮蔽部130的形狀或位置,藉此可變更經分割的線光束的形狀。以下進行說明。 Further, the shielding member 13 can change the shape or position of the shielding portion 130 by movement, whereby the shape of the divided linear light beam can be changed. The following is explained.

圖4(a)、圖4(b)表示遮蔽部材13的詳細形狀。 4(a) and 4(b) show the detailed shape of the shielding member 13.

遮蔽部材13具有沿著線光束150的短軸方向而寬度階段性地不同的遮蔽部130,在線光束150的長軸方向上,各遮蔽部130的寬度相同。各遮蔽部130以基部而連結在一起,各遮蔽部130可一體地移動。若使遮蔽部材13沿線光束150的短軸方向移動,並以規定的遮蔽寬度使遮蔽部130位於線光束150,則可根據該遮蔽寬度來調整經分割的線光束的形狀。 The shielding member 13 has a shielding portion 130 whose width is stepwise different in the short-axis direction of the line beam 150, and the width of each shielding portion 130 is the same in the longitudinal direction of the line beam 150. Each of the shielding portions 130 is coupled to each other by a base portion, and each of the shielding portions 130 is integrally movable. When the shielding member 13 is moved in the short-axis direction of the line beam 150 and the shielding portion 130 is positioned in the line beam 150 with a predetermined shielding width, the shape of the divided line beam can be adjusted according to the shielding width.

另外,就遮蔽部的形狀而言,理想的是遮蔽緣的緣方向相對於線光束的長軸方向呈垂直或任意的角度,且線光束的照射方向上的剖面朝向遮蔽緣而減小,進而更理想的是遮蔽緣為尖銳狀。藉此,可防止或抑制因遮蔽部的遮蔽緣而產生線光束150的繞射從而對半導體基板100造成不良影響。 Further, in terms of the shape of the shielding portion, it is preferable that the edge direction of the shielding edge is perpendicular or arbitrary with respect to the long-axis direction of the line beam, and the cross-section in the irradiation direction of the line beam is reduced toward the shielding edge, and further More desirably, the shadow edge is sharp. Thereby, it is possible to prevent or suppress the diffraction of the line light beam 150 due to the shielding edge of the shielding portion, thereby adversely affecting the semiconductor substrate 100.

圖5(a)~圖5(d)表示遮蔽部材13相對於光路移動而位於光路上的遮蔽部130的寬度發生變更的狀態、與經分割的線光束的光束輪廓的概略形狀。該遮蔽部材13中,可階段性地調整經分割的各線光束的長軸方向長度與間隔。 5(a) to 5(d) show a schematic shape in which the width of the shielding portion 130 on the optical path of the shielding member 13 is changed with respect to the optical path, and the outline of the beam profile of the divided linear beam. In the shielding member 13, the length and the interval in the longitudinal direction of each of the divided line beams can be adjusted stepwise.

圖6表示另一例的遮蔽部材13a。 Fig. 6 shows a shielding member 13a of another example.

遮蔽部材13a隔開間隔而具有等腰三角形狀的遮蔽部130a,該遮蔽部130a沿著線光束150的短軸方向而寬度連續地變化。另外,各遮蔽部130a可相互獨立地進行移動,藉由沿線光束150的短軸方向移動而變更遮蔽寬度,從而可調整經分割的線光束的長軸長度。而且,亦可藉由使一部分遮蔽部130a位於光路上,而其他遮蔽部130a位於光路外,來改變經分割的線光束的數量。 The shielding member 13a has a shielding portion 130a having an isosceles triangle shape with a space therebetween, and the shielding portion 130a continuously changes in width along the short-axis direction of the line beam 150. Further, each of the shielding portions 130a can move independently of each other, and the shielding width can be changed by moving in the short-axis direction of the line beam 150, whereby the long-axis length of the divided line beam can be adjusted. Moreover, the number of divided line beams can also be changed by having a part of the shielding portion 130a on the optical path and the other shielding portion 130a being located outside the optical path.

而且,該形態中,長軸端部遮蔽部20可沿著線光束150的長軸方向移動,可藉由依據光學系統12中的調整,來變更經分割的線光束的兩側端部間的大小。 Further, in this embodiment, the long-axis end shield portion 20 is movable along the long-axis direction of the line beam 150, and the between the both end portions of the divided line beam can be changed by adjustment in the optical system 12. size.

圖7表示又一例的遮蔽部材13b。 Fig. 7 shows a shielding member 13b of still another example.

遮蔽部材13b與遮蔽部材13同樣地具有如下形狀,即,沿著線光束150的短軸方向而長軸方向的寬度階段性地不同。然而,遮蔽部材13b與遮蔽部材13不同的是,各遮蔽部130b可單獨地沿上述短軸方向移動,可藉由使各遮蔽部130b沿線光束150的短軸方向移動而變更遮蔽寬度,從而調整經分割的線光束的長軸長度。而且,亦可藉由使一部分遮蔽部130b位於光路上而一部分遮蔽部130b位於光路外,來改變經分割的線光束的數量。 Similarly to the shielding member 13, the shielding member 13b has a shape in which the width in the major axis direction is different stepwise along the short-axis direction of the line beam 150. However, the shielding member 13b is different from the shielding member 13 in that each shielding portion 130b is individually movable in the short-axis direction, and the shielding portion 130b can be adjusted by moving the shielding portion 130b in the short-axis direction of the line beam 150 to adjust the shielding width. The length of the long axis of the segmented line beam. Further, the number of divided line beams may be changed by positioning a part of the shielding portion 130b on the optical path and a part of the shielding portion 130b outside the optical path.

上述各遮蔽部材中,已對如下情況進行了說明,即,沿著線光束150的短軸方向而長軸方向寬度階段性地或連續地以同一傾向(增加或減少)發生變化,但亦可不具有增加、減少的傾向而長軸方向寬度根據移動位置而不同。 In each of the above-described shielding members, the case where the width in the major axis direction is gradually or continuously changed in the same direction (increased or decreased) along the short-axis direction of the line beam 150, but may not be described. There is a tendency to increase and decrease, and the width in the long axis direction differs depending on the moving position.

圖8表示又一例的遮蔽部材13c。 Fig. 8 shows a shielding member 13c of still another example.

遮蔽部材13c在線光束長軸方向上隔開間隔而具有多個遮蔽部130c,各遮蔽部130c可單獨地沿上述短軸方向移動。遮蔽部130c在上述短軸方向位置上具有不同的長軸方向寬度,該不同並不具有固定的增加或減少傾向,可藉由使各遮蔽部130c沿線光束150的短軸方向移動而變更遮蔽寬度,從而調整經分割的線光束的長軸長度。另外,各遮蔽部130c的上述長軸方向寬度構成為如下,即,在上述短軸方向上不具有大小的傾向,而是根據短軸方向的移動位置具有適當的寬度。 The shielding member 13c has a plurality of shielding portions 130c spaced apart from each other in the longitudinal direction of the beam, and each shielding portion 130c is individually movable in the short-axis direction. The shielding portion 130c has different major axis widths in the short-axis direction position, and the difference does not have a fixed tendency to increase or decrease, and the shielding width can be changed by moving the shielding portions 130c in the short-axis direction of the line beam 150. , thereby adjusting the length of the long axis of the split line beam. Moreover, the width in the longitudinal direction of each of the shielding portions 130c is such that it does not have a size in the short-axis direction, and has a suitable width in accordance with the movement position in the short-axis direction.

而且,已對上述各遮蔽部材中的各遮蔽部彼此具有相同形狀進行了說明,但各遮蔽部亦可具有不同的形狀。 Further, although each of the shielding members in the above-described shielding members has the same shape, each of the shielding portions may have a different shape.

圖9表示又一例的遮蔽部材13d。該形態中,遮蔽部130d與遮蔽部131d在長軸方向上交替排列,且具有彼此不同的形狀。遮蔽部130d構成為沿著上述短軸方向而上述長軸方向寬度階段性地發生變化。因此,藉由沿同一方向移動,而可依次增大或減少長軸方向寬度。遮蔽部131d的長軸方向寬度的變化中並無固定的增加或減少的傾向,而是根據短軸方向位置具有適當的長軸方向寬度。 Fig. 9 shows a shielding member 13d of still another example. In this embodiment, the shielding portion 130d and the shielding portion 131d are alternately arranged in the longitudinal direction and have different shapes from each other. The shielding portion 130d is configured to gradually change in width in the longitudinal direction along the short-axis direction. Therefore, by moving in the same direction, the width in the long axis direction can be sequentially increased or decreased. The change in the width in the major axis direction of the shielding portion 131d does not have a tendency to increase or decrease in a fixed manner, but has a suitable width in the major axis direction according to the position in the short axis direction.

藉由使遮蔽部130d與遮蔽部131d適當移動,而能夠以多種長度來獲得經分割的線光束。另外,本實施形態中,已對形狀不同的遮蔽部材交替排列的情況進行了說明,但本發明中,排列方法不作特別限定,形狀不同的遮蔽部材的種類亦不作特別限定。 By appropriately moving the shielding portion 130d and the shielding portion 131d, the divided line beams can be obtained in various lengths. In the present embodiment, the case where the shielding members having different shapes are alternately arranged has been described. However, in the present invention, the arrangement method is not particularly limited, and the types of the shielding members having different shapes are not particularly limited.

另外,已對上述各遮蔽部中遮蔽部沿著短軸方向移動進行了說明,但亦可以與短軸方向具有角度的方式而在與短軸方向相同的面內進行移動,還可在與短軸方向相同的面內沿著長軸方向移動。進而,亦可在與短軸方向具有角度的面內移動。移動方向不限於一個方向,可沿多個方向進行。 Further, although the shielding portion is moved in the short-axis direction in each of the shielding portions described above, the shielding portion may be moved in the same plane as the short-axis direction so as to have an angle with the short-axis direction, and may be short and short. The planes with the same axial direction move along the long axis direction. Further, it is also possible to move in a plane having an angle with respect to the short-axis direction. The moving direction is not limited to one direction and can be performed in multiple directions.

上述各實施形態中,已對遮蔽部滑動移動而進行了說明,但遮蔽部亦可旋轉移動。以下進行說明。 In each of the above embodiments, the shielding portion has been slidably moved, but the shielding portion is also rotatable. The following is explained.

圖10表示另一遮蔽部材13e,沿長軸方向隔開間隔而配置多個遮蔽部130e。遮蔽部130e具有平板狀的形狀,且具有沿著線光束150的短軸方向的旋轉軸,可隨該旋轉軸而進行旋轉驅動。藉由該旋轉,可變更線光束150的照射方向上的長軸方向的遮蔽有效寬度。各遮蔽部130e可彼此聯動而旋轉,而且亦可一部分或全部分別獨立地旋轉。在可獨立地旋轉的情況下,可藉由一部分或全部的遮蔽部130e間的旋轉角度不同,來變更遮蔽形狀。 Fig. 10 shows another shielding member 13e in which a plurality of shielding portions 130e are arranged at intervals in the longitudinal direction. The shielding portion 130e has a flat plate shape and has a rotation axis along the short-axis direction of the line beam 150, and is rotatable and driven with the rotation axis. By this rotation, the effective width of the shielding in the long-axis direction in the irradiation direction of the line beam 150 can be changed. Each of the shielding portions 130e may be rotated in conjunction with each other, and some or all of them may be independently rotated. When the rotation is independently rotatable, the shielding shape can be changed by the difference in the rotation angle between some or all of the shielding portions 130e.

圖11表示又一例的遮蔽部材13f,沿著長軸方向隔開間隔而配置多個遮蔽部130f。遮蔽部130f具有沿著線光束150的短軸方向的旋轉軸,隨該旋轉軸而進行旋轉驅動。各遮蔽部130f的外周面的形狀在周方向位置上不同,可藉由上述旋轉,並根據旋轉位 置來變更相對於線光束150的長軸方向上的遮蔽有效寬度。而且,各遮蔽部130f與上述實施形態同樣地,可彼此聯動而旋轉,而且,亦可一部分或全部分別獨立地旋轉。在可獨立地旋轉的情況下,藉由一部分或全部的遮蔽部130f間的旋轉角度不同,而可變更遮蔽形狀。 Fig. 11 shows a shielding member 13f of still another example, in which a plurality of shielding portions 130f are arranged at intervals along the longitudinal direction. The shielding portion 130f has a rotation axis along the short-axis direction of the line beam 150, and is rotationally driven in accordance with the rotation axis. The shape of the outer peripheral surface of each of the shielding portions 130f is different in the circumferential direction, and can be rotated by the above and according to the rotational position. The effective width of the shielding relative to the long-axis direction of the line beam 150 is changed. Further, similarly to the above-described embodiment, each of the shielding portions 130f can be rotated in conjunction with each other, and some or all of them can be independently rotated. When the rotation is independently rotatable, the shielding shape can be changed by the difference in the rotation angle between some or all of the shielding portions 130f.

另外,上述實施形態中,已對旋轉軸沿著短軸方向進行了說明,但旋轉軸的方向不作特別限定,而且,亦可具有多個旋轉軸。 Further, in the above-described embodiment, the rotation axis has been described along the short axis direction, but the direction of the rotation axis is not particularly limited, and a plurality of rotation axes may be provided.

而且,主要對上述各遮蔽材的長軸方向上的左右形狀對稱者進行了說明,但左右形狀亦可不同。 Further, although the left and right shape symmetry in the longitudinal direction of each of the masking materials is mainly described, the left and right shapes may be different.

圖12表示另一例的遮蔽部材13g。 Fig. 12 shows a shielding member 13g of another example.

遮蔽部材130g在長軸方向右側,沿著線光束150的短軸方向而外側面的傾斜連續地發生變化,在長軸方向左側,外側面具有沿著短軸方向的直角三角形狀,根據短軸方向的移動位置而長軸方向寬度連續地發生變化。可藉由使該遮蔽部13g沿短軸方向移動而調整經分割的線光束的長軸方向長度,且可單側調整經分割的線光束的長軸方向的端部位置。各遮蔽部130g可聯動,而且,亦可一部分或全部的遮蔽部獨立地移動。 The shielding member 130g continuously changes in the direction of the short axis of the line beam 150 along the short axis direction of the line beam 150, and the left side of the long axis direction has a right-angled triangular shape along the minor axis direction, according to the short axis. The direction of movement of the direction changes continuously in the direction of the long axis direction. The length in the long-axis direction of the divided line beam can be adjusted by moving the shielding portion 13g in the short-axis direction, and the end position in the long-axis direction of the divided line beam can be adjusted on one side. Each of the shielding portions 130g may be interlocked, and some or all of the shielding portions may be independently moved.

上述說明的各遮蔽部材的形狀是作為例示而表示,作為本申請案發明,遮蔽部材的形狀不作特別限定,只要可根據移動來變更遮蔽形狀即可。 The shape of each of the shielding members described above is shown as an example. As the invention of the present application, the shape of the shielding member is not particularly limited, and the shielding shape may be changed according to the movement.

另外,上述說明的各遮蔽部材的至少被照射雷射光側的表面為了防止雷射光的反射,理想的是形成為粗糙面。或者,各 遮蔽部材的上表面亦可藉由賦予角度而相對於雷射光的入射角不為90度。藉由該些對策並利用雷射光的垂直反射,能夠使反射光不會回到光學系統。 Further, at least the surface of each of the shielding members to be irradiated on the side of the laser beam is preferably formed into a rough surface in order to prevent reflection of the laser light. Or each The upper surface of the shielding member may also be at an angle of incidence of 90 degrees with respect to the laser light by imparting an angle. With these countermeasures and the vertical reflection of the laser light, it is possible to prevent the reflected light from returning to the optical system.

或者,遮蔽部材的表面亦可反射線光束,且其上表面被賦予角度,從而使反射光向與光學系統不同的方向反射。設置對該反射光的強度(功率或者能量密度等)進行計測的計測器,利用計測結果來調整雷射光的能量輸出,或者調整衰減器的衰減率,藉此,可使雷射加工對象物達到固定的功率。 Alternatively, the surface of the shielding member may also reflect the line beam, and the upper surface thereof is angled so that the reflected light is reflected in a direction different from the optical system. Providing a measuring device that measures the intensity (power or energy density, etc.) of the reflected light, and adjusts the energy output of the laser light by using the measurement result, or adjusts the attenuation rate of the attenuator, thereby enabling the laser processing object to reach Fixed power.

而且,上述實施形態中,已對遮蔽部材全部移動的情況進行了說明,例如,亦可藉由固定遮蔽部與可動遮蔽部的組合來改變遮蔽形狀,從而調整經分割的線光束的形狀。 Further, in the above-described embodiment, the case where the shielding member has been completely moved has been described. For example, the shape of the divided line beam can be adjusted by changing the shielding shape by the combination of the fixed shielding portion and the movable shielding portion.

以上,基於上述實施形態對本發明進行了說明,但本申請案發明並不限定為上述實施形態的內容,只要不脫離本申請案發明的範圍則可進行適當的變更。 The present invention has been described above based on the above embodiments, but the present invention is not limited to the above-described embodiments, and may be appropriately modified without departing from the scope of the invention.

13‧‧‧遮蔽部材 13‧‧‧Shielding materials

20‧‧‧長軸端部遮蔽部 20‧‧‧Long-axis end shelter

100‧‧‧半導體基板 100‧‧‧Semiconductor substrate

110‧‧‧被處理部 110‧‧‧Processed Department

111‧‧‧處理部 111‧‧‧Processing Department

130‧‧‧遮蔽部 130‧‧ ‧Mask

Claims (11)

一種遮蔽部材,對線光束形狀的一部分雷射光的透過進行遮蔽,形成對被處理體照射的多個經分割的線光束,所述雷射光遮蔽部材的特徵在於:所述遮蔽部材設置成一部分或全部能夠相對於所述線光束形狀的雷射光的光路進行相對移動,伴隨所述移動,能夠進行經分割的所述線光束的形狀調整。 A shielding member that shields a part of the laser beam from the transmission of the linear beam shape to form a plurality of divided line beams that are irradiated to the object to be processed, the laser light shielding member being characterized in that the shielding member is set to be a part or All of the optical paths of the laser beam can be relatively moved with respect to the linear beam shape, and the shape of the divided line beam can be adjusted in accordance with the movement. 如申請專利範圍第1項所述的雷射光遮蔽部材,其被賦予伴隨所述移動而遮蔽形狀發生變化的形狀。 The laser light shielding member according to the first aspect of the invention is characterized in that the shape of the shielding is changed in accordance with the movement. 如申請專利範圍第2項所述的雷射光遮蔽部材,其被賦予伴隨所述移動而遮蔽形狀階段性地或連續地發生變化的形狀。 The laser light shielding member according to claim 2, which is provided with a shape in which the shielding shape changes stepwise or continuously in accordance with the movement. 如申請專利範圍第1項至第3項中任一項所述的雷射光遮蔽部材,其中所述移動包含滑動移動或/及旋轉移動。 The laser light shielding member according to any one of claims 1 to 3, wherein the movement comprises a sliding movement and/or a rotational movement. 如申請專利範圍第1項至第4項中任一項所述的雷射光遮蔽部材,其中所述線光束的形狀調整為所述線光束的長軸方向的長度調整。 The laser light shielding member according to any one of claims 1 to 4, wherein the shape of the line beam is adjusted to a length adjustment of a longitudinal direction of the line beam. 一種雷射處理裝置,其特徵在於包括:雷射光源,輸出雷射光;光學系統,將所述雷射光整形為線光束形狀並導引至被處理體;被處理體保持部,保持所述被處理體以供所述雷射光的照射;以及如申請專利範圍第1項至第5項中任一項所述的雷射光遮蔽部材, 所述雷射光遮蔽部材配置成如下,即,在設為所述線光束形狀的雷射光被導波且到達保持於所述被處理體保持部的所述被處理體的光路上,對一部分所述線光束的透過進行遮蔽而能夠形成多個經分割的線光束。 A laser processing apparatus, comprising: a laser light source that outputs laser light; an optical system that shapes the laser light into a line beam shape and guides it to a processed object; and the processed object holding portion holds the And a laser light shielding member according to any one of claims 1 to 5, The laser light shielding member is disposed such that the laser light having the shape of the line beam is guided to the optical path of the object to be processed held by the object holding portion, and is partially A plurality of divided line beams can be formed by shielding the transmission of the line beam. 如申請專利範圍第6項所述的雷射處理裝置,其中所述遮蔽部材能夠進行滑動移動或/及旋轉移動。 The laser processing apparatus according to claim 6, wherein the shielding member is capable of sliding movement and/or rotational movement. 如申請專利範圍第6項或第7項所述的雷射處理裝置,其中所述被處理體具有積層構造,進行所述被處理體的剝離加工。 The laser processing apparatus according to claim 6 or 7, wherein the object to be processed has a laminated structure, and the object to be processed is subjected to a peeling process. 如申請專利範圍第6項或第7項所述的雷射處理裝置,其中所述被處理體為具有半導體層的基板,進行所述半導體層的結晶化或結晶的活化。 The laser processing apparatus according to claim 6 or 7, wherein the object to be processed is a substrate having a semiconductor layer, and crystallization or crystallization of the semiconductor layer is performed. 如申請專利範圍第6項至第9項中任一項所述的雷射處理裝置,其中所述被處理體為塑膠基板。 The laser processing apparatus according to any one of claims 6 to 9, wherein the object to be processed is a plastic substrate. 一種雷射光照射方法,其特徵在於:將雷射光整形為線光束形狀,在所述線光束的光路上,配置一部分或全部能夠移動的遮蔽部材而對一部分所述線光束的透過進行遮蔽,形成多個經分割的線光束,將已進行所述分割的線光束照射至被處理體,所述經分割的線光束的形狀是對應根據所述移動的所述配置位置而決定。 A laser light irradiation method is characterized in that a laser beam is shaped into a line beam shape, and a part or all of the movable shielding member is disposed on an optical path of the line beam to shield a part of the line beam from being transmitted. The plurality of divided line beams irradiate the line beam that has undergone the division to the object to be processed, and the shape of the divided line beam is determined corresponding to the arrangement position according to the movement.
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