TWI605499B - Method for manufacturing crystalline semiconductor and apparatus for manufacturing crystalline semiconductor - Google Patents

Description

Method for producing crystalline semiconductor and system for producing crystalline semiconductor Manufacturing device

The present invention relates to a method for producing a crystalline semiconductor obtained by irradiating pulsed laser light to an amorphous semiconductor to obtain a crystalline semiconductor, and a device for producing a crystalline semiconductor.

In a thin film transistor used in a pixel switch or a pixel switch or a driving circuit of an organic electroluminescence (EL) display, as a part of a manufacturing method of a low-temperature process, a step of obtaining a crystalline semiconductor using laser light is included. . In this step, the non-single-crystal semiconductor film formed on the substrate is irradiated with laser light to be locally heated, and the semiconductor film is crystallized into a polycrystal or a single crystal during the cooling process. Since the crystallized semiconductor thin film is increased in mobility of the carrier, the thin film transistor can be improved in performance.

In the irradiation of the above-described laser light, it is necessary to perform a homogeneous treatment with a semiconductor thin film. Generally, the energy density of the pulsed laser light irradiated to the amorphous film is fixed.

For example, Patent Document 1 proposes a laser irradiation device as follows, that is, High quality crystallization can be achieved by maintaining the maximum peak height of the pulsed laser light at a fixed level.

Further, Patent Document 2 proposes a laser irradiation apparatus that combines and bundles a plurality of laser beams output from a laser light source to operate timing of a plurality of laser beams (timing) ) Control the pulse waveform.

[Previous Technical Literature]

[Patent Literature]

[Patent Document 1] Japanese Patent No. 3293136

[Patent Document 2] Japanese Patent Laid-Open Publication No. 2002-176006

When a gas such as an excimer gas is used as the pulsed laser light source, the laser light is oscillated according to the discharge method. At this time, after the discharge by the high voltage for the first time, a plurality of discharges occur due to the residual voltage, and as a result, laser light having a plurality of peak groups is generated. In the case of using a plurality of pulsed laser light output from such a pulsed laser light source, laser light may be emitted even when the pulsed laser light is irradiated to the object to be irradiated at the same energy density due to the difference in peak shape. The result of the irradiation is different.

Further, in the conventional laser irradiation apparatus, generally, the output of the laser light is controlled by an energy monitor, and the energy density of the laser light can be maintained to be the same and operated. However, in the pulsed laser light source, even if the energy density is kept constant, the peak shape changes with time due to a change in the gas mixture ratio or the like. Therefore, in the case where the amorphous semiconductor is crystallized by irradiation of laser light, there is a change in crystallization, which is difficult to obtain. The problem of quality and equivalent crystallization.

The present invention has been made in view of the above circumstances, and an object thereof is to provide a method for producing a crystalline semiconductor and a device for producing a crystalline semiconductor which can crystallize an amorphous semiconductor more uniformly.

In the method for producing a crystalline semiconductor according to the present invention, the first aspect of the invention provides a method for producing a crystalline semiconductor, which irradiates a plurality of pulsed laser beams of different path waveguides to an amorphous semiconductor to form the amorphous semiconductor. Crystallization, in the method for producing a crystalline semiconductor, characterized in that the plurality of pulsed laser light has at least a first peak group and a second peak group that appears after one pulse of the temporal intensity change, and The maximum peak intensity in the first peak group is the maximum height of the first pulse, and the ratio of the maximum peak intensity a of the first peak group to the maximum peak intensity b of the second peak group b/a The maximum peak intensity ratio is set as the reference maximum peak intensity ratio as the reference maximum peak intensity ratio, and the difference between the maximum peak intensity ratio of the plurality of pulsed laser light and the reference maximum peak intensity ratio is 4%. the following.

According to a second aspect of the invention, in the first aspect of the invention, the plurality of pulsed laser beams are irradiated on the amorphous semiconductor at different pulse generation timings.

According to a third aspect of the present invention, in the first or second aspect of the invention, the plurality of pulsed laser light is from a plurality of ray Shooting light source output.

According to a fourth aspect of the invention, in the fourth aspect of the invention, the plurality of pulsed laser light is irradiated to the amorphous region at the same energy density. On the semiconductor.

According to a fifth aspect of the present invention, in the fourth aspect of the present invention, the maximum peak intensity ratio of the plurality of pulsed laser beams is set in advance. Within the scope of the regulations.

In a method of producing a crystalline semiconductor according to the invention of the present invention, in the first aspect of the invention, the reference maximum peak intensity ratio is one of the plurality of pulsed laser lights. The maximum peak intensity ratio of pulsed laser light.

According to a seventh aspect of the present invention, in the method of the present invention, the plurality of pulsed laser light is in each of the pulsed laser beams. The maximum peak intensity ratio of one of the pulsed laser lights is set as a reference maximum peak intensity ratio, and the difference between the maximum peak intensity ratio of the other pulsed laser light and the reference maximum peak intensity ratio is 4% or less.

In a method of producing a crystalline semiconductor according to the invention of the present invention, the amorphous semiconductor is an amorphous germanium film formed on a substrate.

A device for manufacturing a crystalline semiconductor according to a ninth aspect of the present invention, comprising: one or two or more laser light sources; The optical system directs a plurality of pulsed laser light to the amorphous semiconductor, and the pulsed laser light is output from the laser light source, and has at least a first peak group and a subsequent one pulse in a temporal intensity change In the second peak group, the maximum peak intensity in the first peak group is the maximum height of the one pulse, and the plurality of pulsed laser beams are set in the following manner by different path waveguides, that is, in each pulse In the laser light, the ratio b/a of the maximum peak intensity a of the first peak group to the maximum peak intensity b of the second peak group is the maximum peak intensity ratio, and the maximum peak intensity ratio which is the reference is set. The reference maximum peak intensity ratio is such that the difference between the maximum peak intensity ratio and the reference maximum peak intensity ratio is 4% or less.

According to a ninth aspect of the invention, in the ninth aspect of the invention, the plurality of pulsed laser beams have different pulse generation timings and are irradiated to the amorphous semiconductor.

According to a ninth aspect of the present invention, in the ninth aspect of the present invention, in the ninth aspect of the present invention, the different pulse generation timing is given by the laser light source or/and the optical system.

According to a ninth aspect of the present invention, in the present invention, the aspect of the invention of the present invention, characterized in that the aspect of the present invention includes the peak intensity ratio adjusting unit, wherein the peak intensity ratio adjusting unit is The above-mentioned maximum peak intensity ratio of the laser light source output is adjusted.

A device for producing a crystalline semiconductor according to a thirteenth aspect of the present invention, characterized in that the invention of the ninth invention to the twelfth invention includes energy density In the degree setting unit, the energy density setting unit sets the energy density in order to irradiate the plurality of pulsed laser beams to the amorphous semiconductor at the same energy density.

According to a fourth aspect of the present invention, in a second aspect of the present invention, there is provided a scanning device, wherein the scanning device compares the plurality of pulsed laser lights with respect to The amorphous semiconductor is scanned and irradiated relatively.

In the present invention, when a plurality of pulsed laser beams along different path waveguides are irradiated onto an amorphous semiconductor to crystallize the amorphous semiconductor, each pulsed laser light includes one pulse in a temporal intensity change. The first peak group and the plurality of peak groups of the second peak group appearing later, the maximum peak intensity in the first peak group is the maximum height in one pulse. Further, as the present invention, three or more peak groups may appear in one pulse.

A group of peaks in a pulsed laser light refers to a group of peaks in which one or more peaks appearing close in time in one pulse, and at least two peak groups appear in one pulse. There is a minimum value of energy intensity between the crest groups.

A plurality of pulsed laser light can be outputted from a plurality of laser light sources, or can be outputted from a single laser light source and split, and can also be combined. The path of the waveguide of the plurality of pulsed laser light includes the light source and the optical system and is at least partially different, and the case of having the shared path is not excluded.

When the 2nd/1st (second/first) maximum peak intensity ratio is different, the optimum irradiation energy density for the crystallization of the amorphous semiconductor is different, which has been clarified by the inventors of the present application.

6 to 8 show photographs of the unevenness monitor of the polycrystalline germanium film (contrast strengthening treatment) which are each obtained by using the 2nd/1st maximum peak intensity ratio of 18.2%, 23.0%, and 26.2%. The irradiation of pulsed laser light of different energy densities is obtained by crystallizing an amorphous germanium film. Based on this, it can be confirmed that the optimum energy density differs greatly.

6, in the case where the 2nd / 1st maximum peak intensity ratio of 18.2%, the energy density of the irradiation ^{430mJ / cm 2, 440mJ / cm} 2, and 450 mJ / cm ² in at 440mJ / cm ² to obtain unevenness The surface of the polycrystalline silicon film is the smallest, so that 440 mJ/cm ² is the optimum irradiation energy density.

Further, as shown, in the case where the 2nd / 1st maximum peak intensity ratio of 23.0%, the irradiation energy density ⁷² and 460mJ / cm ² in 450 mJ at / cm ² to obtain 440mJ / cm ^2, 450mJ / cm The surface of the polycrystalline germanium film with the least unevenness, so that 450 mJ/cm ² is the optimum irradiation energy density.

Further, as shown, in the case where the 2nd / 1st maximum peak intensity ratio of 26.2%, the energy ^density of the irradiation, and 470mJ / cm ² 460mJ the lower ^{450mJ / cm 2, 460mJ / cm} / cm 2 is not obtained 8 The surface of the polycrystalline silicon film was the smallest, so that 460 mJ/cm ² was the best irradiation energy density.

Further, the evaluation of the unevenness of the irradiation of the crystal ruthenium film was carried out by the following method.

In each of the examples, the crystallization film is irradiated with inspection light at five locations, and the reflected light is separately received to obtain a color image, and the color component of the color image is detected, and the color image is single based on the detected color component. Colorization. Then, to the monochromated graph The image data is convolution to obtain image data that enhances image shading, and the surface unevenness is evaluated.

In the case of monochromatization, the main color component of the detected color components can be used, and the main color component can be set to a color component having a relatively large light distribution compared to other colors.

The monochromated image data is represented by matrix data in which the beam direction of the laser is set as a column and the scanning direction of the laser is set as a row, by multiplying a matrix of prescribed coefficients by a monochromated image. The matrix of the data is used for the deconvolution.

The matrix of the predetermined coefficient is obtained by using the following image data as a monitor which enhances the image shading of the beam direction by using the direction of the enhanced beam direction and the direction of enhancing the scanning direction, respectively. Image data and image data that enhances the image in the scanning direction.

Specifically, the following convolutions are performed. Further, the matrix defining the coefficients is not limited to the following.

The graph shown in Figure 9 is the best energy density that will be obtained as described above. The 2nd/1st maximum peak intensity ratio is expressed in association with each other. In addition, the graph also shows contents other than the measurement results described above. According to the graph shown in FIG. 9, as the 2nd/1st maximum peak intensity ratio increases, the optimum irradiation energy density for crystallization also increases.

As described above, when the 2nd/1st maximum peak intensity ratio is different, the optimum irradiation energy density for the crystallization of the amorphous semiconductor is also different.

Therefore, in the present invention, the ratio b/a of the maximum peak intensity a of the first peak group to the maximum peak intensity b of the second peak group is the maximum peak intensity ratio, and the maximum peak to be the reference is obtained. The intensity ratio is set as a reference maximum peak intensity ratio, and a difference between the maximum peak intensity ratio of the plurality of pulsed laser light and the reference maximum peak intensity ratio is 4% or less.

The maximum peak intensity ratio described above is difficult to adjust after output from the laser source, and is usually set at the output of the laser source. The setting of the maximum peak intensity ratio can be performed by adjusting the output of the laser light source, setting the output circuit, and adjusting the mixing ratio of the gas as the medium.

Further, in terms of the reference maximum peak intensity ratio, the initial maximum peak intensity ratio of any one of the plurality of pulsed laser beams can be used, or experimentally predetermined. Further, the maximum peak intensity ratio of the pulsed laser light in the previous irradiation may be set as the reference maximum peak intensity ratio. Furthermore, the maximum peak intensity ratio of one pulse of laser light may be set as a reference maximum peak intensity ratio between a plurality of arbitrary pulsed laser light, so that the maximum peak intensity ratio in the other pulsed laser light is maximized relative to the reference. The difference between the peak intensity ratios is 4% or less.

As described above, the difference between the maximum peak intensity ratio and the reference maximum peak intensity ratio is 4% or less for the following reasons:

As shown in FIG. 10, the energy density can be expressed in one pulse by the sum of the time X integral of the energy intensity C in the first peak group and the time 2X integral of the energy intensity B in the second peak group. Further, on the same substrate, the optimum energy density for crystallization of the amorphous semiconductor is fixed. This optimum energy density is affected by the laser pulse waveform, specifically by the maximum peak intensity ratio. The area of the pulse waveform refers to the energy density. The optimum energy density has an allowable range of about 10 mJ/cm ² in the usual amorphous tantalum film (OED range: optimum energy density range). If it is within this allowable range, the crystallization of the laser treatment proceeds in the same manner. In order to satisfy the allowable range, the difference between the maximum peak intensity ratios must be set to be within 4%. Therefore, the above difference is made 4% or less.

For example, the unit of the peak intensity is an arbitrary unit, and when the 2nd/1st maximum peak intensity ratio is 18.2%, the maximum peak intensity in the first peak group is 100 in the relative value, and the second peak group is The maximum peak intensity in the same is 18.2, and the optimum energy density is 439.5 mJ/cm ² . In the case where the 2nd/1st maximum peak intensity ratio is 23.1%, if the maximum peak intensity in the first peak group is 93 in relative terms and the maximum peak intensity in the second peak group is 21.5, the optimal energy is The density is 451.3 mJ/cm ² . In the case where the 2nd/1st maximum peak intensity ratio is 26.2%, the maximum peak intensity in the first peak group is 89 in relative terms, and the maximum peak intensity in the second peak group is 23.5. The density was 459.2 mJ/cm ² . If the linear regression by the least square method is performed based on the relationships, the linear shape A shown in Fig. 9 is obtained. Based on the linear shape A, for example, when the 2nd/1st maximum peak intensity ratio is observed to be 22.4%, the optimum energy density width (10 mJ/cm ² ) is in the range of 455 mJ/cm ² to 445 mJ/cm ² . 445mJ / cm ² associated with optimal energy density 2nd / 1st maximum peak intensity ratio is 20.44%, 455mJ / cm ² associated with optimal energy density 2nd / 1st maximum peak intensity ratio was 24.49%. If the width is expressed as the difference between the maximum peak intensity ratios, it is 24.49%-20.44%=4.05%. Therefore, if the difference between the maximum peak intensity ratios is 4% or less, it can be limited to the allowable range of the optimum energy density.

Further, when a plurality of pulsed laser beams are irradiated to the amorphous semiconductor at different pulse generation timings, the number of pulses irradiated to the amorphous semiconductor per unit time can be increased, and the pulse width can be analogously increased.

Pulse generation timings different from each other can be obtained at the output of the laser light source, and can also be obtained by giving a phase difference in the middle of the path. The phase difference can be given by the demultiplexing, but the method of demultiplexing the pulsed laser light is not particularly limited, and a beam splitter or the like can be suitably used.

When pulsed laser light is irradiated in a different pulse generating timing amorphous semiconductor, the pulses may not overlap each other, and a part of the pulses may overlap.

Moreover, a variable attenuator that adjusts the transmittance of the pulsed laser light can be provided on the path of the pulsed laser light. The variable attenuator can irradiate the pulsed laser light to the amorphous semiconductor at a desired energy density, and can irradiate the plurality of pulsed laser light to the amorphous semiconductor at a common energy density.

In addition, the energy density of the pulsed laser light can be obtained by the output of the pulsed laser source. Control and one or both of the above variable attenuators are performed.

As described above, according to the present invention, a method of manufacturing a crystalline semiconductor in which a plurality of pulsed laser beams of different path waveguides are irradiated onto an amorphous semiconductor to crystallize the amorphous semiconductor, the plurality of pulsed laser lights in time Among the one pulse in the change in the intensity, at least the first peak group and the second peak group appearing later, and the maximum peak intensity in the first peak group is the maximum height of the one pulse, The ratio b/a of the maximum peak intensity a of the first peak group to the maximum peak intensity b of the second peak group is the maximum peak intensity ratio, and the maximum peak intensity ratio to be the reference is set as the reference maximum peak intensity. The ratio of the maximum peak intensity ratio of the plurality of pulsed laser light to the reference maximum peak intensity ratio is 4% or less, so that the amorphous semiconductor can be more uniformly crystallized.

1‧‧‧Laser annealing device

2, 3‧‧‧pulse laser source

4, 5‧‧‧ Variable attenuator

6, 10, 13‧‧‧ semi-mirror

7, 11, 14‧ ‧ Measurer

7a, 11a, 14a‧‧‧Lighting Department

8‧‧‧Control Department

9‧‧‧ total reflection mirror

12‧‧‧Optical system

15‧‧‧Substrate

15a‧‧‧Amorphous semiconductor film

16‧‧‧ platform

17‧‧‧Mobile devices

A‧‧‧linear

Energy intensity in the second peak group of B‧‧‧

Energy intensity in the first peak group of C‧‧‧

Time of energy intensity C in the first peak group of X‧‧‧

Time of energy intensity B in the 2X‧‧‧2nd peak group

A1, a2‧‧‧ maximum peak intensity in the first peak group

Maximum peak intensity in the second peak group of b1, b2‧‧

P1‧‧‧1st peak group

P2‧‧‧2nd crest group

Fig. 1 is a schematic view showing a laser annealing apparatus according to an embodiment of the present invention.

Fig. 2 is a schematic view showing a measurement configuration of pulsed laser light.

Fig. 3 is also a view showing an example of a pulse waveform of pulsed laser light.

Fig. 4 is also a view for explaining the maximum peak intensity ratio of pulsed laser light output from two pulsed laser light sources.

Fig. 5 is also a view for explaining the coincidence of pulsed laser light output from two pulsed laser light sources.

Fig. 6 is also a photograph of a pattern obtained by a heterogeneous monitor of a polycrystalline germanium film obtained by crystallizing an amorphous germanium film by irradiation of pulsed laser light having an energy density at a maximum peak intensity ratio of 18.2%. .

Fig. 7 is also a substitute photograph of a polycrystalline germanium film obtained by crystallizing an amorphous germanium film by irradiation of pulsed laser light whose energy density is changed at a maximum peak intensity ratio of 23.0%. .

Fig. 8 is also a photo substitution diagram obtained by the unevenness monitor of the polycrystalline germanium film obtained by crystallizing the amorphous germanium film by irradiation of pulsed laser light whose energy density is changed at a maximum peak intensity ratio of 26.2%. .

FIG. 9 is a view showing the relationship between the ratio of the maximum peak intensity in the second peak group of the pulsed laser light to the maximum peak intensity in the first peak group, and the optimum irradiation energy density for crystallization. .

FIG. 10 is a view for explaining the reason why the difference between the maximum peak intensity ratio of the pulsed laser light other than the reference pulsed laser light and the reference maximum peak intensity ratio is set to 4% or less.

An embodiment of the present invention will be described with reference to the accompanying drawings.

First, a manufacturing apparatus of a crystalline semiconductor according to the present embodiment will be described with reference to Figs. 1 and 2 .

As shown in FIG. 1, a laser annealing apparatus 1 corresponding to a manufacturing apparatus of a crystalline semiconductor has two pulsed laser light sources 2 and a pulsed laser light source 3 that output pulsed laser light.

Pulsed laser source 2, pulsed laser source 3, for example, excimer laser oscillation The light source emits pulsed laser light having a wavelength of 308 nm and a pulse frequency of 1 Hz to 600 Hz.

On the output side of the pulsed laser light source 2, a variable attenuator 4 capable of adjusting the attenuation rate of the pulsed laser light output from the pulsed laser light source 2 is disposed. Further, on the output side of the pulsed laser light source 3, a variable attenuator 5 capable of adjusting the attenuation rate of the pulsed laser light output from the pulsed laser light source 3 is disposed.

On the output side of the variable attenuator 4 is disposed a semi-mirror 6 for transmitting a portion of the pulsed laser light output from the variable attenuator 4 for measurement and reflecting the remaining portion for processing.

As shown in FIG. 2, the light receiving portion 7a of the measuring device 7 for measuring the waveform of the pulsed laser light can be disposed on the transmission side of the half mirror surface 6. The measuring unit 7 is electrically connected to the control unit 8, and outputs the measurement result of the measuring unit 7 to the control unit 8.

A mirror surface 9 is disposed on the output side of the variable attenuator 5, and the mirror surface 9 reflects the pulsed laser light reflected by the half mirror surface 6 on the side of the optical system 12 side, and the pulsed laser light output from the variable attenuator 5 is The other side is reflected.

On the other side of the mirror surface 9, the semi-mirror 10 is disposed, and the half mirror 10 is supplied with a part of the pulsed laser light reflected by the mirror surface 9 for measurement, and the remaining portion is reflected toward the optical system 12 side for use. deal with.

As shown in FIG. 2, on the transmission side of the half mirror 10, the light receiving portion 11a of the measuring device 11 for measuring the waveform of the pulsed laser light can be disposed. The measuring unit 11 is electrically connected to the control unit 8 and outputs the measurement result of the measuring unit 11 to the control unit 8.

The optical system 12 is configured to perform two pulsed laser beams of pulsed laser light reflected by a reflecting surface of the mirror surface 9 and pulsed laser light reflected by the half mirror surface 10. The waveguide is shaped into a beam shape, and is emitted to the same path. The optical system 12 includes, for example, a mirror surface, a lens, a homogenizer, and the like.

The configuration of the optical system is not particularly limited in the present invention, and a plurality of them may be provided in accordance with the number of pulsed laser beams.

Further, the control unit 8 is controllably connected to the pulsed laser light source 2, the pulsed laser light source 3, the variable attenuator 4, and the variable attenuator 5. The control unit 8 controls the entire laser annealing apparatus 1, such as a pulse. The output of the laser light source 2, the pulsed laser light source 3, or the setting of the pulse start timing, the control of the attenuation rate in the variable attenuator 4, the variable attenuator 5, and the like.

The control unit 8 may include a central processing unit (CPU) and a program for operating the CPU, and store a read only memory (ROM) such as the program to become a random access memory of the work area. (Random Access Memory, RAM), and flash memory that keeps data non-volatile.

The control unit 8 can adjust the maximum peak intensity ratio in the pulsed laser light by adjusting the output of the pulsed laser light source 2 and the pulsed laser light source 3. Further, the gas mixture ratio of the pulsed laser light source 2 and the pulsed laser light source 3 is adjusted by the control of the control unit 8, and as a result, the maximum peak intensity ratio in the pulsed laser light can be adjusted. In these controls, the control unit 8 corresponds to a peak intensity ratio adjustment unit.

Further, the control unit 8 can adjust the output of the pulsed laser light source 2 and the pulsed laser light source 3 or adjust the attenuation ratio of the variable attenuator 4 and the variable attenuator 5 to set the amorphous state of the pulsed laser light. The energy density on a semiconductor. That is, the control unit 8, the variable attenuator 4, and the variable attenuator 5 correspond to an energy density setting unit.

On the exit side of the optical system 12 is disposed a semi-mirror surface 13 for transmitting a portion of the plurality of pulsed laser light for measurement and for reflecting the remaining portion for processing.

The light receiving portion 14a of the measuring device 14 that measures the energy density of each pulsed laser light is disposed on the transmission side of the half mirror surface 13. The measuring unit 14 is electrically connected to the control unit 8 and outputs the measurement result of the measuring unit 14 to the control unit 8.

On the reflection side of the half mirror surface 13, a stage 16 is disposed, which supports the substrate 15 on which the amorphous semiconductor film 15a is formed. The substrate 15 is, for example, a glass substrate, and the amorphous semiconductor film 15a is, for example, an amorphous germanium film.

The platform 16 is movable in the face direction (XY direction) of the platform 16. The platform 16 is provided with a moving device 17 that moves the platform 16 at a high speed in the above-described plane direction.

Next, a semiconductor manufacturing method using the laser annealing apparatus 1 and using the amorphous semiconductor film 15a as a raw material will be described.

The stage 16 mounts and supports the substrate 15, and the substrate 15 is formed with an amorphous semiconductor 15a to be crystallized in the upper layer.

In the present invention, as the amorphous semiconductor, an amorphous germanium film formed on a substrate is preferably used. A polycrystalline germanium film can be obtained by crystallizing an amorphous germanium film. The amorphous germanium film is usually formed to a thickness of 45 nm to 55 nm, but the thickness is not particularly limited in the present invention.

Further, a glass substrate is usually used in the substrate. However, the material of the substrate in the present invention is not particularly limited, and other materials may be used.

Next, the pulse laser light source 2 and the pulsed laser light source 3 are controlled by the control unit 8, and pulsed laser light is output from the pulsed laser light source 2 and the pulsed laser light source 3, respectively. Each of the pulsed laser light has the same wavelength, the same repetition frequency, and the pulse start timing is different, and has a phase difference on the amorphous semiconductor film. By setting the pulse start timing of each pulsed laser light, the pulsed light is outputted at different pulse generation timings between different pulsed laser light and having a phase difference with respect to the repetition frequency, and is irradiated to the non- Crystalline semiconductor film 15a.

Pulsed laser light source 2, such as a self-excimer laser oscillator, and pulsed laser light output by the pulsed laser light source 3, as shown in FIG. 3, has a first peak group P1 and one pulse in one of the temporal changes. The second peak group P2 that appears. Further, the maximum peak intensity a in the first peak group P1 is larger than the maximum peak intensity b in the second peak group P2, and the maximum peak intensity a becomes the maximum height in one pulse.

Fig. 3 shows pulse waveforms in the case where the same excimer laser oscillator is used and the output energies thereof are set to 850 mJ, 950 mJ, and 1050 mJ, respectively. In the case of the maximum peak intensity ratio b/a (hereinafter, appropriately referred to as "2nd/1st maximum peak intensity ratio"), the higher the output energy, the larger the ratio b/a, and the smaller the output energy, the ratio b /a is smaller.

The pulsed laser light output from the pulsed laser light source 2 and the pulsed laser light source 3 reaches the variable attenuator 4 and the variable attenuator 5, respectively, and is attenuated by a predetermined attenuation rate by the variable attenuator. The attenuation rate is controlled by the control unit 8, and is adjusted such that the pulsed laser light output from the pulsed laser light source 2 and the pulsed laser light source 3 has the same energy density on the amorphous semiconductor film 15a.

A part of the pulsed laser light outputted by the attenuation of the variable attenuator 4 passes through the half mirror 6, and the remaining portion is reflected. The pulsed laser light having passed through the half mirror 6 is received by the light receiving portion 7a, and the pulse waveform is measured by the measuring device 7. The measurement result of the pulse waveform of the measuring device 7 is sent to the control unit 8.

The remaining portion of the pulsed laser light reflected by the half mirror surface 6 is reflected by a reflecting surface of the total reflection mirror surface 9 and is introduced into the optical system 12.

The pulsed laser light outputted by the attenuation of the variable attenuator 5 is reflected by the other reflecting surface of the mirror surface 9 and is incident on the half mirror surface 10. A part of the pulsed laser light that has entered the half mirror 10 passes through the half mirror 10 and is received by the light receiving portion 11a, and the remaining portion is reflected and incident on the optical system 12. The pulsed laser light received by the light receiving unit 11a measures the pulse waveform by the measuring device 11. The measurement result of the pulse waveform of the measuring device 11 is sent to the control unit 8.

The control unit 8 calculates a ratio of the maximum peak intensity of the first peak group to the maximum peak intensity of the second peak group based on the measurement result of the pulse waveform obtained by the measuring unit 7 and the measuring unit 11 as Maximum peak intensity ratio.

Specifically, as shown in FIG. 4, with respect to the pulsed laser light output from the pulsed laser light source 2, the 2nd/1st maximum peak intensity ratio R1 is determined by the maximum peak intensity b1 in the second peak group relative to the first peak. The ratio of the maximum peak intensity a1 in the group is expressed as b1/a1. Further, the 2nd/1st maximum peak intensity ratio R2 of the pulsed laser light output from the other pulsed laser light source 3 is the maximum peak intensity b2 in the second peak group relative to the maximum peak intensity a2 in the first peak group. The ratio is expressed as b2/a2.

In this embodiment, the initial value of the maximum peak intensity ratio R1 is set as the maximum reference. The peak intensity ratio R0 is controlled so that the maximum peak intensity ratio R1 and the maximum peak intensity ratio R2 are 4% or less with respect to the reference maximum peak intensity ratio R0.

Regarding the control method, the fluctuation of the maximum peak intensity ratio can be adjusted to 4% or less by adjusting the outputs of the pulsed laser light source 2 and the pulsed laser light source 3. As shown in FIG. 3, it is understood that the output change of the pulsed laser light is expressed as the maximum peak intensity ratio.

The variation of the energy density due to the adjustment of the output of the pulsed laser light source 2 and the pulsed laser light source 3 is canceled by adjusting the attenuation rates of the variable attenuator 4 and the variable attenuator 5. The adjustment of the attenuation rate of the variable attenuator 4 and the variable attenuator 5 hardly affects the maximum peak intensity ratio, and thus the attenuation rate can be adjusted only for the purpose of adjusting the energy density.

Each of the pulsed laser beams whose maximum peak intensity ratio is limited to 4% or less with respect to the reference maximum peak intensity ratio is guided while being subjected to a desired shaping in the optical system 12, and is emitted to the same optical path. A part of the plurality of pulsed laser beams emitted from the optical system 12 is received by the light receiving portion 14a through the half mirror surface 13, and the remaining portion is reflected by the half mirror surface 13 and then irradiated onto the amorphous semiconductor film 15a. The amorphous semiconductor film 15a is moved together with the stage 16 moved by the moving device 17, whereby the pulsed laser light is irradiated while being relatively scanned.

Further, the pulsed laser light received by the light receiving unit 14a sets the attenuation rate of the variable attenuator 4 and the variable attenuator 5 so that the pulsed laser light has the same energy density in the measurement result of the measuring device 14. The light receiving position of the light receiving unit 14a is set to a position assumed to be the irradiation surface of the amorphous semiconductor film 15a.

In the amorphous semiconductor film 15a, the energy density is set to be the same, and the difference between the maximum peak intensity ratio and the reference maximum peak intensity ratio is maintained at 4% or less, whereby the amorphous film is uniformly and favorably crystallized. By adjusting the maximum peak intensity ratio described above, the difference between the maximum peak intensity ratios of the pulsed laser light outputted from the different pulsed laser light sources 2 and the pulsed laser light source 3 can be reduced, and the change over time is also reduced.

Further, the pulsed laser light source 2 and the pulsed laser light source 3 preferably output pulse pulsations at different pulse generation timings in such a manner that pulses of pulsed laser light do not overlap each other and have a predetermined phase difference with respect to the repetition frequency. Shoot light.

Specifically, for example, as shown in FIG. 5, in the case where the pulsed laser light source 2 and the pulsed laser light source 3 both output pulsed laser light at a pulse frequency of 600 Hz, the pulsed laser light source 3 is opposite to the pulsed laser light source 2 The pulsed timing of the half cycle is delayed to output the pulsed laser light. Thereby, the pulsed laser light of the pulsed laser light source 2 and the pulsed laser light source 3 twice as large as the pulsed laser light having a pulse frequency of 1200 Hz is substantially irradiated to the amorphous semiconductor film 15a.

The pulsed laser light is irradiated to the amorphous semiconductor at different pulse generation timings from each other, whereby the pulse frequency can be substantially increased, and the pulsed laser light can be irradiated with high productivity.

Further, in the above embodiment, the case where two pulsed laser light sources 2 and the pulsed laser light source 3 are used has been described. However, it is also possible to use more than two pulsed laser light sources.

Further, in the above embodiment, the pulsed laser light is relatively scanned by moving the stage 16, but the optical system for guiding the pulsed laser light can be operated at a high speed. The pulsed laser light is scanned relatively.

Further, in the above embodiment, the case where a plurality of pulsed laser beams are irradiated to the amorphous semiconductor film at the same energy density has been described, and a plurality of pulsed laser beams may be set to be irradiated to the amorphous light at different energy densities. Semiconductor.

The present invention has been described above based on the above embodiments, but the present invention is not limited to the above-described embodiments, and can be appropriately modified without departing from the scope of the invention.

1‧‧‧Laser annealing device

2, 3‧‧‧pulse laser source

4, 5‧‧‧ Variable attenuator

6, 10, 13‧‧‧ semi-mirror

8‧‧‧Control Department

9‧‧‧ total reflection mirror

12‧‧‧Optical system

14‧‧‧Measurer

14a‧‧‧Receiving Department

15‧‧‧Substrate

15a‧‧‧Amorphous semiconductor film

16‧‧‧ platform

17‧‧‧Mobile devices

Claims (12)

A method for producing a crystalline semiconductor, wherein the amorphous semiconductor is crystallized by irradiating a plurality of pulsed laser beams of different path waveguides to an amorphous semiconductor, and the method for producing the crystalline semiconductor is characterized in that the plurality of pulsed rays are The emitted light is irradiated onto the amorphous semiconductor at the same energy density, and has at least a first peak group and a second peak group appearing after one pulse in the temporal intensity change, and the first peak The maximum peak intensity in the group is the maximum height of the above-described one pulse, and the ratio b/a of the maximum peak intensity a of the first peak group to the maximum peak intensity b of the second peak group is set as the maximum peak intensity. The ratio of the maximum peak intensity ratio to be the predetermined reference is set as the reference maximum peak intensity ratio, and the difference between the maximum peak intensity ratio of the plurality of pulsed laser light and the reference maximum peak intensity ratio is 4% or less, and The plurality of pulsed laser lights are used in any one of the pulsed laser beams, and the maximum peak intensity ratio of one of the pulsed laser lights is set as a reference. A maximum peak intensity of the pulse laser beam with respect to the difference between the reference ratio of 4% or less. The method for producing a crystalline semiconductor according to the first aspect of the invention, wherein the plurality of pulsed laser beams are irradiated on the amorphous semiconductor at different pulse generation timings. The method for producing a crystalline semiconductor according to claim 1, wherein The plurality of pulsed laser lights are output from a plurality of laser light sources. The method for producing a crystalline semiconductor according to the first aspect of the invention, wherein the maximum peak intensity ratio of the plurality of pulsed laser light is within a predetermined range set in advance. The method for producing a crystalline semiconductor according to claim 1, wherein the reference maximum peak intensity ratio is a maximum peak intensity ratio of one of the plurality of pulsed laser beams. The method for producing a crystalline semiconductor according to any one of claims 1 to 5, wherein the amorphous semiconductor is an amorphous germanium film formed on a substrate. A device for manufacturing a crystalline semiconductor, comprising: one or two or more laser light sources; and an optical system for guiding a plurality of pulsed laser light to an amorphous semiconductor, wherein the pulsed laser light is from the laser The light source output has at least a first peak group and a second peak group that appears after one pulse of the temporal intensity change, and the maximum peak intensity in the first peak group is the largest of the one pulses. The plurality of pulsed laser beams are set to have a height, and the plurality of pulsed laser beams are set to be irradiated onto the amorphous semiconductor at the same energy density, and the first peak group is formed in each of the pulsed laser beams. The above-mentioned maximum peak intensity a and the second peak group described above The ratio b/a of the maximum peak intensity b is set to the maximum peak intensity ratio, and the maximum peak intensity ratio which is a predetermined reference is set as the reference maximum peak intensity ratio, and the difference between the maximum peak intensity ratio and the reference maximum peak intensity ratio is 4% or less, and the plurality of pulsed laser lights are in each of the pulsed laser lights, and the maximum peak intensity ratio of one of the pulsed laser lights is set as a reference, and the maximum peak intensity ratio of the other pulsed laser light is set. The difference from the above reference is 4% or less. The apparatus for producing a crystalline semiconductor according to claim 7, wherein the plurality of pulsed laser beams have different pulse generation timings and are irradiated to the amorphous semiconductor. The apparatus for manufacturing a crystalline semiconductor according to claim 7, wherein the different pulse generation timing is given by the laser light source or/and the optical system. The apparatus for producing a crystalline semiconductor according to any one of the seventh aspect of the present invention, comprising a peak intensity ratio adjusting unit, wherein the peak intensity ratio adjusting unit outputs the maximum peak derived from the laser light source The intensity ratio is adjusted. The apparatus for producing a crystalline semiconductor according to any one of the items of the present invention, wherein the energy density setting unit performs the plurality of pulsed laser beams at the same energy density. The energy density is set by irradiating the amorphous semiconductor. The crystalline half as described in any one of claims 7 to 9 A conductor manufacturing apparatus includes a scanning device that scans and irradiates the plurality of pulsed laser lights relative to the amorphous semiconductor.