SG11201508595SA - Laser Beam Shielding Member, Laser Processing Device And Laser Beam Irradiation Method - Google Patents

Laser Beam Shielding Member, Laser Processing Device And Laser Beam Irradiation Method

Info

Publication number
SG11201508595SA
SG11201508595SA SG11201508595SA SG11201508595SA SG11201508595SA SG 11201508595S A SG11201508595S A SG 11201508595SA SG 11201508595S A SG11201508595S A SG 11201508595SA SG 11201508595S A SG11201508595S A SG 11201508595SA SG 11201508595S A SG11201508595S A SG 11201508595SA
Authority
SG
Singapore
Prior art keywords
laser beam
laser
processing device
shielding member
irradiation method
Prior art date
Application number
SG11201508595SA
Inventor
Suk-Hwan Chung
Miki Sawai
Junichi Shida
Original Assignee
Japan Steel Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Steel Works Ltd filed Critical Japan Steel Works Ltd
Publication of SG11201508595SA publication Critical patent/SG11201508595SA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • B23K26/702—Auxiliary equipment
    • B23K26/706—Protective screens
SG11201508595SA 2013-04-17 2014-04-10 Laser Beam Shielding Member, Laser Processing Device And Laser Beam Irradiation Method SG11201508595SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013086972A JP5725518B2 (en) 2013-04-17 2013-04-17 Laser light shielding member, laser processing apparatus, and laser light irradiation method
PCT/JP2014/060374 WO2014171384A1 (en) 2013-04-17 2014-04-10 Laser light shielding member, laser processing device, and laser light irradiation method

Publications (1)

Publication Number Publication Date
SG11201508595SA true SG11201508595SA (en) 2015-11-27

Family

ID=51731327

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201508595SA SG11201508595SA (en) 2013-04-17 2014-04-10 Laser Beam Shielding Member, Laser Processing Device And Laser Beam Irradiation Method

Country Status (6)

Country Link
JP (1) JP5725518B2 (en)
KR (1) KR102214156B1 (en)
CN (1) CN105144344B (en)
SG (1) SG11201508595SA (en)
TW (1) TWI647046B (en)
WO (1) WO2014171384A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109654392B (en) * 2017-01-11 2020-09-04 哈尔滨理工大学 First shielding plate and nostril illuminating device with same
JPWO2018142958A1 (en) * 2017-02-02 2019-07-18 三菱電機株式会社 Heat treatment apparatus, heat treatment method, and method of manufacturing semiconductor device
JP2019036636A (en) * 2017-08-15 2019-03-07 株式会社ブイ・テクノロジー Laser irradiation device, thin film transistor manufacturing method and projection mask
JP6970580B2 (en) * 2017-10-03 2021-11-24 株式会社ディスコ Laser processing equipment and output confirmation method
EP3761344A1 (en) * 2019-07-05 2021-01-06 Laser Systems & Solutions of Europe System and method for spatially controlling an amount of energy delivered to a processed surface of a substrate

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05208289A (en) * 1992-01-13 1993-08-20 Toshiba Corp Laser beam irradiating device
EP0770925B1 (en) * 1995-10-11 2002-01-02 SANYO ELECTRIC Co., Ltd. Photoprocessing method and apparatus
JP3292058B2 (en) * 1996-10-01 2002-06-17 三菱電機株式会社 Method and apparatus for processing wiring substrate using laser light
US6737672B2 (en) 2000-08-25 2004-05-18 Fujitsu Limited Semiconductor device, manufacturing method thereof, and semiconductor manufacturing apparatus
JP3945805B2 (en) * 2001-02-08 2007-07-18 株式会社東芝 Laser processing method, liquid crystal display device manufacturing method, laser processing device, and semiconductor device manufacturing method
KR100424593B1 (en) * 2001-06-07 2004-03-27 엘지.필립스 엘시디 주식회사 A method of crystallizing Si
KR100796758B1 (en) 2001-11-14 2008-01-22 삼성전자주식회사 A mask for crystallizing polysilicon and a method for forming thin film transistor using the mask
JP4474108B2 (en) 2002-09-02 2010-06-02 株式会社 日立ディスプレイズ Display device, manufacturing method thereof, and manufacturing apparatus
TWI353467B (en) * 2003-01-08 2011-12-01 Samsung Electronics Co Ltd Polysilicon thin film transistor array panel and m
US7387922B2 (en) * 2003-01-21 2008-06-17 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, method for manufacturing semiconductor device, and laser irradiation system
CN1997878A (en) * 2003-07-18 2007-07-11 Uclt有限责任公司 Method for correcting critical dimension variations in photomasks
JP5072197B2 (en) * 2004-06-18 2012-11-14 株式会社半導体エネルギー研究所 Laser irradiation apparatus and laser irradiation method
JP2006013050A (en) * 2004-06-24 2006-01-12 Sharp Corp Laser beam projection mask, laser processing method using the same and laser processing system
JP2006145745A (en) * 2004-11-18 2006-06-08 Dainippon Screen Mfg Co Ltd Pattern drawing apparatus and method for drawing pattern
JP2007214527A (en) * 2006-01-13 2007-08-23 Ihi Corp Laser annealing method and laser annealer
EP2299476A4 (en) * 2008-06-26 2011-08-03 Ihi Corp Method and apparatus for laser annealing
JP2010089094A (en) * 2008-10-03 2010-04-22 Disco Abrasive Syst Ltd Laser beam machining apparatus
JP2010264471A (en) * 2009-05-14 2010-11-25 Norio Karube Thermal stress cracking for brittle material by wide region non-uniform temperature distribution
JP2012081478A (en) * 2010-10-07 2012-04-26 Ushio Inc Laser lift-off device

Also Published As

Publication number Publication date
JP5725518B2 (en) 2015-05-27
KR20150143508A (en) 2015-12-23
JP2014212178A (en) 2014-11-13
WO2014171384A1 (en) 2014-10-23
CN105144344A (en) 2015-12-09
TWI647046B (en) 2019-01-11
TW201446387A (en) 2014-12-16
KR102214156B1 (en) 2021-02-09
CN105144344B (en) 2018-03-20

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