TW201440954A - Double-sided lapping and polishing process - Google Patents

Double-sided lapping and polishing process Download PDF

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TW201440954A
TW201440954A TW102115414A TW102115414A TW201440954A TW 201440954 A TW201440954 A TW 201440954A TW 102115414 A TW102115414 A TW 102115414A TW 102115414 A TW102115414 A TW 102115414A TW 201440954 A TW201440954 A TW 201440954A
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ring module
workpiece
grinding
workpieces
grinding disc
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TW102115414A
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Chinese (zh)
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Yun-Yu Cehen
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Crystalwise Technology
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Abstract

The present invention discloses an double-sided lapping and polishing process. The major differences between the present invention and the prior art is, the rotation direction of the inner ring module and the outer ring module are adjusted to be opposite mutually so as to randomize the orbit of the template carrier and improve the flatness thereof.

Description

雙面研磨拋光方法及其系統 Double-side grinding and polishing method and system thereof

本發明係關於一種雙面研磨拋光方法及其系統,更明確的說,本發明係關於一種具有最佳化晶圓表面的總厚度變化值效果的雙面研磨拋光方法及其系統。 BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a double side abrasive polishing method and system thereof, and more particularly to a double side abrasive polishing method and system thereof having the effect of optimizing the total thickness variation of the wafer surface.

化學機械研磨(Chemical-Mechanical Polishing)係廣被應用於半導體器件製程之中之製程,其係使用化學腐蝕及機械力對加工過程中的矽晶圓或其它襯底材料進行平坦化處理。其中,有一研磨之方式為行星式雙面研磨拋光製程(Double-sided Lapping and Polishing process)。而係應用一行星式雙面研磨拋光系統來對晶圓進行雙面拋光。簡單而言,該裝置係由一上磨盤、下磨盤以及一設置於其二者之間的行星齒輪組來組成。而前述的行星齒輪組則得大致的分成外環模組、內環模組以及一工件載體。外環模組、內環模組及工件載體之外測均係具有複數個相對應的輪齒。工件載體係設置於外環模組以及內環模組之間並與其連動。在應用時,上磨盤係抵持於工件載體中的工件之上側表面並對其向下磨盤 方向施加有一下壓力。同時,外環模組及內環模組將依同一方向旋轉,如順時針方向,旋轉以帶動該工件載體進行一相對應方向之同心旋轉,以為均勻研磨之效。需知道的是,外環模組及內環模組依同一方向旋轉的目的在於減少工件載體之自轉速度,進而避免工件破片的狀況發生。前述的雙面研磨拋光系統的設計將於下部說明。 Chemical-Mechanical Polishing is widely used in the manufacturing process of semiconductor devices. It uses chemical etching and mechanical force to planarize germanium wafers or other substrate materials during processing. Among them, one grinding method is a double-sided Lapping and Polishing process. A planetary double-sided lapping and polishing system is applied to double-sidedly polish the wafer. Briefly, the apparatus consists of an upper disc, a lower disc, and a planetary gear set disposed therebetween. The aforementioned planetary gear set is roughly divided into an outer ring module, an inner ring module and a workpiece carrier. The outer ring module, the inner ring module and the workpiece carrier are all measured to have a plurality of corresponding teeth. The workpiece carrier is disposed between and interlocked with the outer ring module and the inner ring module. In application, the upper grinding disc is held against the upper side surface of the workpiece in the workpiece carrier and is ground down There is a downward pressure on the direction. At the same time, the outer ring module and the inner ring module will rotate in the same direction, such as clockwise, rotating to drive the workpiece carrier to perform a concentric rotation in a corresponding direction, so as to achieve uniform grinding effect. It should be noted that the purpose of rotating the outer ring module and the inner ring module in the same direction is to reduce the rotation speed of the workpiece carrier, thereby avoiding the occurrence of workpiece fragmentation. The design of the aforementioned double-side lapping and polishing system will be described below.

使用者在應用前述的裝置時,發明人意外地發現一簡單、可靠、週邊成本極低且得以增進現行雙面研磨拋光製程的精準度之方法。簡單來說,發明人發現,在製程進行時,若將外環模組及內環模組的轉動方向進行調整以使其二者之轉動方向為相逆時,配合適當之轉速參數以及壓力即得極明顯地改善習知製程之效果而將破片率控制在一定程度之下。在某些狀況下,應用了本發明之方法後,甚至可使標的晶圓之表面的總厚度變化(TTV)值(um)的分佈限縮為原製程的二份之一或更佳。 When the user applied the aforementioned device, the inventors unexpectedly discovered a simple, reliable method with extremely low peripheral cost and improved accuracy of the current double-side lapping and polishing process. Briefly, the inventors have found that when the process is in progress, if the direction of rotation of the outer ring module and the inner ring module is adjusted so that the directions of rotation of the outer ring module are opposite, the appropriate rotational speed parameters and pressure are It is extremely obvious to improve the effect of the conventional process and to control the fragmentation rate to a certain extent. In some cases, after applying the method of the present invention, the distribution of the total thickness variation (TTV) value (um) of the surface of the target wafer can be reduced to one-half or better of the original process.

另外,於習知技術中,使用者將外環模組及內環模組的轉動方向設為同向之目的在於控制該工件載體之自轉速度,進而防止工件因自轉速度過快而造成破片增加的情形。而相反地,本發明克服了習知技藝的刻板印象,並以與通常認知相違的方式以為晶片之研磨。 In addition, in the prior art, the user sets the rotation direction of the outer ring module and the inner ring module to be the same direction to control the rotation speed of the workpiece carrier, thereby preventing the workpiece from increasing due to the excessive rotation speed. The situation. Rather, the present invention overcomes the stereotypes of the prior art and assumes the grinding of the wafer in a manner contrary to conventional recognition.

承上,以下將對本發明之具體設計進行更進一步 的細部說明。 In the following, the specific design of the present invention will be further advanced. Detailed description.

1‧‧‧雙面研磨及抛光系統 1‧‧‧Double-side grinding and polishing system

10‧‧‧上磨盤 10‧‧‧Upper plate

11‧‧‧上研磨面 11‧‧‧Upper surface

20‧‧‧下磨盤 20‧‧‧ Lower grinding disc

21‧‧‧下研磨面 21‧‧‧ under the grinding surface

30‧‧‧行星齒輪組 30‧‧‧ planetary gear set

31‧‧‧外環模組 31‧‧‧Outer ring module

311‧‧‧甲螺齒 311‧‧‧ A screw

32‧‧‧內環模組 32‧‧‧ Inner Ring Module

321‧‧‧乙螺齒 321‧‧‧E.

33‧‧‧工件載體 33‧‧‧Workpiece carrier

331‧‧‧丙螺齒 331‧‧ ‧ screw teeth

332‧‧‧穿孔 332‧‧‧Perforation

40‧‧‧工件 40‧‧‧Workpiece

41‧‧‧上工面 41‧‧‧Working face

42‧‧‧下工面 42‧‧‧Under work

X‧‧‧共同軸線 X‧‧‧ common axis

圖一A及圖一B係繪述了本發明之本發明的行星式雙面研磨拋光系統使用期間的示意圖。 1A and 1B are schematic views showing the use of the planetary double-side lapping and polishing system of the present invention during use.

圖一C係繪述了本發明的行星式雙面研磨拋光系統中的行星齒輪組之俯視圖。 Figure 1C depicts a top view of a planetary gear set in a planetary double side grinding and polishing system of the present invention.

圖二係繪述了本發明及先前技術之效果比較圖表。 Figure 2 is a graph comparing the effects of the present invention and prior art.

承前所述,本發明係提出了一種行星式雙面研磨拋光製程。首先需說明的是,本發明之製程及方法所應用之行星式雙面研磨拋光系統在晶圓研磨的領域中己廣泛地被應用且為習知,而本發明之發明重點在於其製程的作動方式,以致使本發明得以應用在既有的裝置當中而無需更動或僅需對其軟體進行更新後,即得以被應用。更明確的說,凡外環模組及內環模組得以逆向旋轉的行星式雙面研磨拋光系統(裝置),均得為本發明之應用環境。 As described above, the present invention proposes a planetary double-side lapping polishing process. First of all, it should be noted that the planetary double-side lapping and polishing system to which the process and method of the present invention are applied has been widely used and well-known in the field of wafer grinding, and the invention of the present invention focuses on the operation of the process. The manner in which the present invention is applied to an existing device without requiring a change or simply updating its software is applied. More specifically, the planetary double-sided grinding and polishing system (device) in which the outer ring module and the inner ring module are reversely rotated can be used in the application environment of the present invention.

更明確的說,請參閱圖一A至圖一C,圖一A及圖一B係分別地繪述了本發明之本發明的行星式雙面研磨拋光系統使用期間之示意圖。而圖一C係繪述了本發明的行星式雙面研磨拋光系統中的行星齒輪組之俯視圖。 More specifically, please refer to FIG. 1A to FIG. 1C. FIG. 1A and FIG. 1B respectively illustrate schematic diagrams of the planetary double-side lapping and polishing system of the present invention during use. 1 and C are plan views of the planetary gear set in the planetary double-side lapping and polishing system of the present invention.

由圖可見,本發明之行星式雙面研磨拋光系統1 係大致地與先前技術之系統相同,同樣係包含有一其係由一上磨盤10、下磨盤20以及一設置於其二者之間的行星齒輪組30。而前述的行星齒輪組30則得大致的分成外環模組31、內環模組32以及一工件載體33。外環模組31、內環模組32及工件載體33之內側或外側係分別地具有複數個相對應的輪齒。工件載體33係設置於外環模組31以及內環模組32之間並與其連動。在應用時,上磨盤10係抵持於工件載體33中的工件之上側表面並對其向下磨盤20方向施加有一工作壓力以使工件被夾持於上磨盤10及下磨盤20之間,同時,上磨盤10及下磨盤20係分別地進行軸向旋轉以對與其接觸的工件的上、下側表面以為研磨。同時,外環模組31及內環模組32將得旋轉以帶動該工件載體33進行一相對應方向之旋轉,以驅動工件載體33以使其沿一軸公轉以使工件之表面得以被均勻的研磨。 As can be seen from the figure, the planetary double-sided grinding and polishing system 1 of the present invention The system is generally identical to the prior art system, as well as including a top disc 10, a lower disc 20, and a planetary gear set 30 disposed therebetween. The aforementioned planetary gear set 30 is roughly divided into an outer ring module 31, an inner ring module 32, and a workpiece carrier 33. The inner or outer sides of the outer ring module 31, the inner ring module 32, and the workpiece carrier 33 respectively have a plurality of corresponding teeth. The workpiece carrier 33 is disposed between and interlocked with the outer ring module 31 and the inner ring module 32. In application, the upper grinding disc 10 is abutted against the upper side surface of the workpiece in the workpiece carrier 33 and applies a working pressure to the downward grinding disc 20 to hold the workpiece between the upper grinding disc 10 and the lower grinding disc 20, while The upper grinding disc 10 and the lower grinding disc 20 are respectively axially rotated to grind the upper and lower side surfaces of the workpiece in contact therewith. At the same time, the outer ring module 31 and the inner ring module 32 are rotated to drive the workpiece carrier 33 to rotate in a corresponding direction to drive the workpiece carrier 33 to revolve along an axis to make the surface of the workpiece uniform. Grinding.

與先前技術之相異之處在,於本發明的行星式雙面研磨拋光系統1在作動時,其外環模組31與內環模組32之旋轉方向為相反,配合上磨盤10及下磨盤20之相反旋轉方向,工件載體33之研磨軌跡將較習知者更為隨機,且其工件載體33之自轉速度亦將更高,藉此提高工件之表面之加工品質。 What is different from the prior art is that when the planetary double-sided lapping and polishing system 1 of the present invention is actuated, the outer ring module 31 and the inner ring module 32 rotate in opposite directions, and cooperate with the upper disc 10 and the lower In the opposite direction of rotation of the grinding disc 20, the grinding path of the workpiece carrier 33 will be more random than the conventional one, and the rotation speed of the workpiece carrier 33 will also be higher, thereby improving the processing quality of the surface of the workpiece.

為了更明確的說明本發明,以下將以一實施例來對各元件的細部設計進行說明。首先,於本例中,本發明之程序需利用一雙面研磨拋光系統(機)1。該抛光系統(裝置)1係包含有一上磨盤10、一下磨盤20、一外環模組31(又稱環齒輪 組)以及一內環模組32(又稱中心齒輪組)。上磨盤10係具有一上研磨面11。下磨盤20係具有一下研磨面21,而上磨盤10及下磨盤20之上研磨面11以及下研磨面21係分別地相互面對且為水平設置。外環模組31之內側係具有複數個甲螺齒311,另外,其亦與一動力源(未繪示於圖)連接以為水平旋轉。而內環模組32之外側係具有複數個乙螺齒321,再者,內環模組32亦與另一動力源連接。於本例中,該等動力源得為一馬達。 In order to explain the present invention more clearly, the detailed design of each element will be described below by way of an embodiment. First, in this example, the procedure of the present invention requires the use of a double-sided lapping and polishing system (machine) 1. The polishing system (device) 1 includes an upper grinding disc 10, a lower grinding disc 20, and an outer ring module 31 (also called a ring gear). Group) and an inner ring module 32 (also known as a central gear set). The upper grinding disc 10 has an upper grinding surface 11. The lower grinding disc 20 has a lower grinding surface 21, and the upper grinding disc 10 and the lower grinding disc 20 have a grinding surface 11 and a lower grinding surface 21 which face each other and are horizontally disposed. The inner side of the outer ring module 31 has a plurality of nail teeth 311, and is also connected to a power source (not shown) for horizontal rotation. The outer ring module 32 has a plurality of teeth 321 on the outer side. Further, the inner ring module 32 is also connected to another power source. In this example, the power source is a motor.

接著,再準備有一工件載體33,於本例中,前述的工件載體33為一遊星輪(Template Carrier),該遊星輪之外側係具有複數個穿孔332及複數個丙螺齒331。等穿孔332係用於供工件40容置,而該等丙螺齒331則係用於與甲螺齒311以及乙螺齒321嚙合及連動。於本例中,該遊星輪之直徑為516公釐且具有170顆丙螺齒,該遊星輪之穿孔為一四吋大小之圓狀穿孔。 Next, a workpiece carrier 33 is prepared. In this example, the workpiece carrier 33 is a template carrier, and the outer side of the star wheel has a plurality of perforations 332 and a plurality of screw teeth 331. The through holes 332 are used for the workpiece 40, and the screw teeth 331 are used for meshing and interlocking with the nail teeth 311 and the teeth. In this example, the star wheel has a diameter of 516 mm and has 170 screw teeth, and the perforation of the star wheel is a circular perforation of a size of four inches.

隨後,準備複數個工件40,該複數個工件40之厚度係較該工件載體33之厚度略大以使工件40設置於其中時得以露出部份以與上磨盤10接觸且受研磨。於本例中,該工件之形狀係分別地與該穿孔332的形狀相對應且為一圓片狀,該複數個工件40係分別具有一上工面41及一下工面42。於本例中,遊星輪之穿孔為一直徑為四吋的圓狀穿孔。 Subsequently, a plurality of workpieces 40 are prepared, the thickness of the plurality of workpieces 40 being slightly larger than the thickness of the workpiece carrier 33 to expose portions of the workpiece 40 to be in contact with the upper grinding disc 10 and being ground. In this example, the shape of the workpiece is corresponding to the shape of the through hole 332 and is a disk shape, and the plurality of workpieces 40 respectively have an upper working surface 41 and a lower working surface 42. In this example, the perforation of the star wheel is a circular perforation having a diameter of four turns.

隨後,將該工件載體33設置於該下磨盤20之該乙表面上之外環模組31及內環模組32之間的空隙處並使該工件 載體33之丙螺齒331同時與外環模組31及內環模組32之各個甲螺齒311及乙螺齒321嚙合並與其連動。並將複數個工件40嵌入該工件載體33之該複數個穿孔332中以使該工件40之該下工面42與該下磨盤20之該下研磨面21接觸。接著,將該上磨台10往該下磨台20,或將下磨台20往上磨台10,移動以使上研磨面11與複數個工件40之該上工面41接觸,以使工件40被夾持於上磨台10及下磨台20之間以使各個工件40分別地被施加有一工作壓力。 Then, the workpiece carrier 33 is disposed on the surface of the B surface of the lower grinding disc 20 at a gap between the outer ring module 31 and the inner ring module 32 and the workpiece The screw teeth 331 of the carrier 33 simultaneously mesh with and interlock with the respective helical teeth 311 and the female teeth 321 of the outer ring module 31 and the inner ring module 32. A plurality of workpieces 40 are embedded in the plurality of perforations 332 of the workpiece carrier 33 such that the lower working surface 42 of the workpiece 40 contacts the lower abrasive surface 21 of the lower grinding disc 20. Next, the upper grinding table 10 is moved to the lower grinding table 20, or the lower grinding table 20 is moved to the upper grinding table 10, so that the upper grinding surface 11 is in contact with the upper working surface 41 of the plurality of workpieces 40, so that the workpiece 40 is It is clamped between the upper grinding table 10 and the lower grinding table 20 so that the respective workpieces 40 are respectively applied with a working pressure.

隨後,驅動該內環模組32以及外環模組31以使其 二者分別地沿一共同軸線X進行軸向旋轉以對工件之研磨路徑進行定義。需注意的是,為了能達到更隨機的路徑,內環模組32以及外環模組31之旋轉方向為相反,而其轉速則可按使用者之需求而自由調整。惟如欲取得較佳之效果,則建議其外環模組31及內環模組32之軸向旋轉速應分別地設定為每分鐘逆時針4至26轉以及每分鐘順時針10至60轉為佳。附帶一提的是,外環模組31及內環模組32之軸向旋轉速在分別介於每分鐘逆時針8至13轉以及順時針20至30轉時,其效果最佳且得以兼顧其效益。就效益的部份,更明確的說,破片率將與各元件之轉速呈正相關,而工作效率則係與各元件之轉速呈負相關,據此,前述之建議值並非無意義,反之,其係經由大量的實驗所取得之建議數值。 Subsequently, the inner ring module 32 and the outer ring module 31 are driven to The two are axially rotated along a common axis X to define the grinding path of the workpiece. It should be noted that in order to achieve a more random path, the rotation directions of the inner ring module 32 and the outer ring module 31 are opposite, and the rotation speed can be freely adjusted according to the needs of the user. For better results, it is recommended that the axial rotation speeds of the outer ring module 31 and the inner ring module 32 should be set to 4 to 26 revolutions per minute counterclockwise and 10 to 60 revolutions per minute clockwise. good. Incidentally, the axial rotation speeds of the outer ring module 31 and the inner ring module 32 are respectively 8 to 13 revolutions per minute counterclockwise and 20 to 30 revolutions clockwise, respectively, and the effect is optimal and can be taken into consideration. Its benefits. In terms of efficiency, it is more clear that the fragmentation rate will be positively correlated with the rotational speed of each component, and the work efficiency is negatively correlated with the rotational speed of each component. Accordingly, the aforementioned suggested value is not meaningless. The recommended values obtained through a large number of experiments.

除了該內環模組32及外環模組31之外,上磨盤10 以及下磨盤20亦將一併地被驅動以使該上磨盤10沿該共同軸心進行軸向旋轉以對工件進行施壓及研磨。同樣地,上磨盤10及下磨盤20之轉速亦無硬性規定,惟如欲取得較佳之研磨效果,上磨盤10及下磨盤20之轉速係建議分別地設定於每分鐘順時針5至40轉以及每分鐘逆時針10至60轉之間。附帶一提的是,當上磨盤10及下磨盤20之轉速係分別地介於每分鐘順時針10至20轉以及每分鐘逆時針20至30轉之間時,其效果最佳且得以兼顧其效益。 In addition to the inner ring module 32 and the outer ring module 31, the upper grinding wheel 10 And the lower grinding disc 20 will also be driven together to axially rotate the upper grinding disc 10 along the common axis to press and grind the workpiece. Similarly, the rotational speeds of the upper grinding disc 10 and the lower grinding disc 20 are not rigidly defined. However, if a better grinding effect is to be obtained, the rotational speeds of the upper grinding disc 10 and the lower grinding disc 20 are preferably set to be clockwise 5 to 40 revolutions per minute, respectively. Counterclockwise between 10 and 60 revolutions per minute. Incidentally, when the rotational speeds of the upper grinding disc 10 and the lower grinding disc 20 are respectively 10 to 20 revolutions per minute clockwise and 20 to 30 revolutions per minute counterclockwise, the effect is optimal and can be taken into consideration. benefit.

而前述所提及的由上磨台往該下磨台施加的工 作壓力則係以0.01至0.12 Kg/cm2為佳。而其壓力又於0.02~0.06 Kg/cm2之間時,效果最佳。 And the above-mentioned work applied from the upper grinding table to the lower grinding table The pressure is preferably 0.01 to 0.12 Kg/cm2. When the pressure is between 0.02~0.06 Kg/cm2, the effect is best.

為了說明本發明之效果,請見圖二,圖二係繪述 了本發明及先前技術之效果比較圖表。更明確的說,圖二為一盒鬚圖,其Y軸為一總厚度變化(TTV)值。圖中灰色塊體之頂端及底端之數值係表示了受測表面之上四分位數及下四分位數,亦即百份之七十五及百份之二十五之分佈區間。而下方細線則係代表小於百份之二十五之分佈區間,而其底端則為其最小值。而上方細線則係代表大於百份之七十五之分佈區間,其頂端則為其最大值。需注意的是,該等數據係排除了彎曲度過大以致無法使用之劣品之數據(Warp NG lot)以為之。由圖可見,右側之先前技術之總厚度變化之最大值、四下分位數、四上分位數以及最小值分別約為0.9 um、2.6 um、 5.6 um及10um。反觀本發明,其右側之先前技術之總厚度變化之最大值、四下分位數、四上分位數以及最小值分別約為1um、2.3 um、4 um及5.6um。 In order to illustrate the effects of the present invention, please refer to FIG. 2 and FIG. A comparison chart of the effects of the present invention and the prior art. More specifically, Figure 2 is a box of whiskers whose Y-axis is a total thickness variation (TTV) value. The values at the top and bottom of the gray block in the figure represent the quartile and the lower quartile above the surface to be tested, that is, the distribution range of seventy-five percent and twenty-five percent. The lower thin line represents the distribution interval of less than twenty-five percent, while the bottom end is the minimum. The upper thin line represents a distribution interval greater than seventy-five percent, and its top is its maximum. It should be noted that these data exclude the data of the inferior product that is too curved to be used (Warp NG lot). As can be seen from the figure, the maximum thickness variation, the fourth lower quantile, the fourth upper quantile, and the minimum value of the prior art on the right side are about 0.9 um, 2.6 um, respectively. 5.6 um and 10um. In contrast to the present invention, the maximum thickness variation, the fourth lower quantile, the fourth upper quantile, and the minimum value of the prior art on the right side are about 1 um, 2.3 um, 4 um, and 5.6 um, respectively.

簡單而言,於表面研磨的領域中,工件表面的總 In simple terms, in the field of surface grinding, the total surface of the workpiece

厚度變化實得視為工件表面之加工品質,總厚度變化值之區間愈小,代表工件表面愈平坦及均勻,反之亦然。先前技術之工件的總厚度變化值之最大值與最小值之差值約為9.1um,而本發明之差值則僅為4.6um,其平整度約為先前技術的兩倍。更明確的說,目前尚未見任一先前技術得以利用行星式雙面研磨拋光裝置/系統得出總厚度變化值(TTV)之最大值與最小值之差值小於6um之製程。藉此應得證本發明之技術貢獻且非為顯而易見的。 The thickness variation is regarded as the processing quality of the surface of the workpiece. The smaller the interval of the total thickness variation, the flatter and uniform the surface of the workpiece, and vice versa. The difference between the maximum and minimum values of the total thickness variation of the prior art workpiece is about 9.1 um, while the difference of the present invention is only 4.6 um, which is about twice as flat as the prior art. More specifically, there has not been any prior art that utilizes a planetary double-sided lapping and polishing apparatus/system to derive a process in which the difference between the maximum and minimum values of the total thickness variation (TTV) is less than 6 um. The technical contribution of the present invention should be demonstrated by this and is not obvious.

綜合而言,本發明與先前技術之主要相異之處在 於本發明的行星式雙面研磨拋光方法係藉由將內環模組以及外環模組之旋轉方向調整為相反而使設置於其中間之工件載體之行進軌跡相對較為隨機進而使工件之表面更為均勻。 In summary, the main difference between the present invention and the prior art is In the planetary double-side polishing method of the present invention, the traveling trajectory of the workpiece carrier disposed therebetween is relatively random and the surface of the workpiece is made by adjusting the rotation directions of the inner ring module and the outer ring module to be opposite. More even.

需瞭解本說明書目前所述者僅屬本發明的眾多 實例方法之其中之一,在本發明之實際使用時,可使用與本說明書所述方法及裝置相類似或等效之任何方法或手段為之。再者,本說明書中所提及之一數目以上或以下,係包含數目本身。 It should be understood that the presently described in this specification is only numerous of the present invention. Any of the example methods, in the actual use of the present invention, may be any method or means similar or equivalent to those described in the specification. Furthermore, one or more of the numbers mentioned in the specification include the number itself.

且應瞭解的是,本說明書揭示執行所揭示功能之 某些方法、流程,並不以說明書中所記載之順序為限,除說明書有明確排除或各個程序、步驟間係必然地具有因果關係,否則其執行時間之先前端看使用者之要求而自由調整。另外,考量本發明之各元件之性質為相互類似,故各元件間的說明、標號為相互適用。需注意的是,本說明書中所提及之裝置、模組、器、元件等組成部份並不以實際上相互獨立之硬體為限,其亦得以個別或整合後的軟體、韌體或硬體的方式呈現,合先述明。 It should be understood that the present disclosure discloses performing the disclosed functions. Some methods and procedures are not limited to the order described in the specification. Except that the specification is clearly excluded or the procedures and steps are necessarily causally related, otherwise the execution time is free from the requirements of the user. Adjustment. Further, since the properties of the respective elements of the present invention are considered to be similar to each other, the descriptions and reference numerals between the respective elements apply to each other. It should be noted that the components, modules, devices, components and other components mentioned in this specification are not limited to hardware that is actually independent of each other. It can also be individually or integrated with software, firmware or The hardware is presented in a way that is stated first.

藉由以上較佳具體實施例之詳述,係希望能更加 清楚描述本發明之特徵與精神,而並非以上述所揭露的較佳具體實施例來對本發明之範疇加以限制。相反地,其目的是希望能涵蓋各種改變及具相等性的安排於本發明所欲申請之專利範圍的範疇內。因此,本發明所申請之專利範圍的範疇應根據上述的說明作最寬廣的解釋,以致使其涵蓋所有可能的改變以及具相等性的安排。 With the details of the above preferred embodiments, it is hoped that The features and spirit of the invention are clearly described, and the scope of the invention is not limited by the preferred embodiments disclosed herein. On the contrary, the intention is to cover various modifications and equivalents within the scope of the invention as claimed. Therefore, the scope of the patented scope of the invention should be construed in the broadest

30‧‧‧行星齒輪組 30‧‧‧ planetary gear set

31‧‧‧外環模組 31‧‧‧Outer ring module

311‧‧‧甲螺齒 311‧‧‧ A screw

32‧‧‧內環模組 32‧‧‧ Inner Ring Module

321‧‧‧乙螺齒 321‧‧‧E.

33‧‧‧工件載體 33‧‧‧Workpiece carrier

331‧‧‧丙螺齒 331‧‧ ‧ screw teeth

332‧‧‧穿孔 332‧‧‧Perforation

40‧‧‧工件 40‧‧‧Workpiece

Claims (9)

一種雙面研磨拋光方法,其包含有以下步驟:準備一雙面研磨拋光系統,該雙面研磨拋光系統係包含有:一上磨盤,具有一上研磨面;一下磨盤,具有一下研磨面,該下研磨面係與該上研磨面相互面對且為平行;一外環模組,該外環模組之內側係具有複數個甲螺齒;以及一內環模組,該內環模組之外側係具有複數個乙螺齒;準備一工件載體,該工件載體係具有複數個穿孔及複數個丙螺齒,該複數個丙螺旋係設置於該工件載體之週邊;準備複數個工件,該複數個工件之厚度係較該工件載體之厚度大,該工件之形狀係分別地與該穿孔相對應,該複數個工件係分別具有一上工面及一下工面;將該工件載體設置於該下磨盤之該乙表面上並使該丙螺齒同時與該複數個甲螺齒及該複數個乙螺齒嚙合;將該複數個工件嵌入該工件載體之該複數個穿孔中以使該工件之該下工面與該下磨盤之該下研磨面接觸;驅動該內環模組以使其沿一共同軸線進行旋轉;驅動該外環模組以使其沿該共同軸線進行旋轉,該內環模組之旋轉方向與該外環模組相反;驅動該上磨盤以使該上磨盤沿該共同軸線進行軸向旋轉;驅動該下磨盤以使該下磨盤沿該共同軸線進行軸向旋轉;以及調整該上磨台及該下磨台間之距離以使該上研磨面及該下研磨面分別地與該複數個工件之該上工面及該下工面接觸,藉此對該複數個工件施加有一工作壓力並對該複數個工件進行研磨。 A double-side lapping and polishing method comprising the steps of: preparing a double-side lapping and polishing system, the double-side lapping and polishing system comprising: an upper grinding disc having an upper grinding surface; and a lower grinding disc having a lower grinding surface, The inner surface of the outer ring module has a plurality of nail teeth; and an inner ring module, the inner ring module The outer side has a plurality of teeth; a workpiece carrier is prepared, the workpiece carrier has a plurality of perforations and a plurality of screw teeth, the plurality of C-spirals are disposed around the workpiece carrier; preparing a plurality of workpieces, the plurality The thickness of the workpiece is larger than the thickness of the workpiece carrier, and the shape of the workpiece corresponds to the perforation respectively. The plurality of workpieces respectively have an upper working surface and a lower working surface; the workpiece carrier is disposed on the lower grinding disc The surface of the B is caused to engage the plurality of helical teeth and the plurality of helical teeth simultaneously; the plurality of workpieces are embedded in the plurality of perforations of the workpiece carrier to make the workpiece The lower working surface is in contact with the lower grinding surface of the lower grinding disc; the inner ring module is driven to rotate along a common axis; and the outer ring module is driven to rotate along the common axis, the inner ring mold The rotation direction of the set is opposite to the outer ring module; the upper grinding disk is driven to axially rotate the upper grinding disk along the common axis; the lower grinding disk is driven to axially rotate the lower grinding disk along the common axis; The distance between the upper grinding table and the lower grinding table is such that the upper grinding surface and the lower grinding surface are respectively in contact with the upper working surface and the lower working surface of the plurality of workpieces, thereby applying a work to the plurality of workpieces Pressure and grinding the plurality of workpieces. 如申請專利範圍第1項所述的方法,其中該下磨盤之軸向旋轉的方向與該上磨盤的方向相反。 The method of claim 1, wherein the direction of axial rotation of the lower grinding disc is opposite to the direction of the upper grinding disc. 如申請專利範圍第2項所述的方法,其中該工件載具包含有一遊星輪(Template Carrier),該複數個工件係分別為一圓片狀晶圓。 The method of claim 2, wherein the workpiece carrier comprises a template carrier, and the plurality of workpieces are each a wafer wafer. 如申請專利範圍第3項所述的方法,其中該工件為一直徑為4吋的圓片狀晶圓。 The method of claim 3, wherein the workpiece is a wafer wafer having a diameter of 4 。. 如申請專利範圍第4項所述的方法,其中該上磨盤之軸向旋轉速為每分鐘順時針5至40轉,該下磨盤之軸向旋轉速為每分鐘逆時針10至60轉,該外環模組之軸向旋轉速為每分鐘逆時針4至26轉,該內環模組之軸向旋轉速為每分鐘順時針10至60轉;以及該工作壓力為0.01~0.06 Kg/cm2The method of claim 4, wherein the axial rotation speed of the upper grinding disc is 5 to 40 revolutions per minute clockwise, and the axial rotation speed of the lower grinding disc is 10 to 60 revolutions per minute counterclockwise. The axial rotation speed of the outer ring module is 4 to 26 revolutions per minute counterclockwise, the axial rotation speed of the inner ring module is 10 to 60 revolutions per minute clockwise; and the working pressure is 0.01 to 0.06 Kg/cm. 2 . 如申請專利範圍第4項所述的方法,其中,該工件之總厚度變化(TTV)之最大值及最小值之差值係小於6um。 The method of claim 4, wherein the difference between the maximum value and the minimum value of the total thickness variation (TTV) of the workpiece is less than 6 um. 一種雙面研磨拋光系統,用於同時地對複數個工件進行雙面研磨,其包含有:一上磨盤,具有一上研磨面;一下磨盤,具有一下研磨面,該下研磨面係與該上研磨面相互面對且為平行;一外環模組,該外環模組之內側係具有複數個甲螺齒;以及一內環模組,該內環模組之外側係具有複數個乙螺齒;一工件載體,該工件載體係具有複數個穿孔及複數個丙螺齒,該複數個丙螺旋係設置於該工件載體之週邊;其中,在應用時,該工件載體係設置於該下磨盤之該乙表面上以使該丙螺齒同時與該複數個甲螺齒及該複數個乙螺齒嚙合, 該複數個工件係嵌設於該工件載體之該複數個穿孔中以使該工件之該下工面與該下磨盤之該下研磨面接觸,同時,該內環模組係沿一共同軸線進行旋轉,該外環模組係沿該共同軸線進行旋轉,該內環模組之旋轉方向與該外環模組相反,該上磨盤係沿該共同軸線進行軸向旋轉,該下磨盤係沿該共同軸線進行軸向旋轉,該上研磨面及該下研磨面係分別同時與該複數個工件之該上工面接觸及該下工面接觸,藉此對該複數個工件施加有一工作壓力並對該複數個工件進行研磨。 A double-side grinding and polishing system for simultaneously performing double-side grinding on a plurality of workpieces, comprising: an upper grinding disc having an upper grinding surface; and a lower grinding disc having a lower grinding surface, the lower grinding surface and the upper surface The outer surface of the outer ring module has a plurality of nail teeth; and an inner ring module, the inner ring module has a plurality of snails on the outer side of the outer ring module a workpiece carrier having a plurality of perforations and a plurality of C-threads disposed on a periphery of the workpiece carrier; wherein, in application, the workpiece carrier is disposed on the lower disc The surface of the B is such that the screw teeth are simultaneously meshed with the plurality of nail teeth and the plurality of teeth. The plurality of workpieces are embedded in the plurality of perforations of the workpiece carrier such that the lower working surface of the workpiece is in contact with the lower grinding surface of the lower grinding disc, and the inner ring module is rotated along a common axis The outer ring module rotates along the common axis, and the inner ring module rotates in a direction opposite to the outer ring module, and the upper grinding disc rotates axially along the common axis, and the lower grinding disc is along the common The axis is axially rotated, and the upper grinding surface and the lower grinding surface are respectively in contact with the upper working surface of the plurality of workpieces and the lower working surface, thereby applying a working pressure to the plurality of workpieces and the plurality of workpieces The workpiece is ground. 如申請專利範圍第7項所述的系統,其中該下磨盤之軸向旋轉的方向與該上磨盤相反。 The system of claim 7, wherein the direction of axial rotation of the lower grinding disc is opposite to the upper grinding disc. 如申請專利範圍第7項所述的系統,其中該工件載具包含有一遊星輪(Template Carrier)。 The system of claim 7, wherein the workpiece carrier comprises a Template Carrier.
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI622461B (en) * 2015-10-09 2018-05-01 Sumco股份有限公司 Carrier ring, grinding device, and grinding method
CN113183028A (en) * 2021-04-08 2021-07-30 江西钨业控股集团有限公司 Planet disc clamp, process for machining diamond-shaped blade by using planet disc clamp and diamond-shaped blade
CN113894635A (en) * 2021-11-03 2022-01-07 安徽格楠机械有限公司 Self-learning-based intelligent silicon-based wafer ultra-precision grinding and polishing machine
TWI813466B (en) * 2022-06-30 2023-08-21 大陸商西安奕斯偉材料科技股份有限公司 Grinding device and grinding method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI622461B (en) * 2015-10-09 2018-05-01 Sumco股份有限公司 Carrier ring, grinding device, and grinding method
US11052506B2 (en) 2015-10-09 2021-07-06 Sumco Corporation Carrier ring, grinding device, and grinding method
CN113183028A (en) * 2021-04-08 2021-07-30 江西钨业控股集团有限公司 Planet disc clamp, process for machining diamond-shaped blade by using planet disc clamp and diamond-shaped blade
CN113894635A (en) * 2021-11-03 2022-01-07 安徽格楠机械有限公司 Self-learning-based intelligent silicon-based wafer ultra-precision grinding and polishing machine
CN113894635B (en) * 2021-11-03 2022-06-21 安徽格楠机械有限公司 Self-learning-based intelligent silicon-based wafer ultra-precision grinding and polishing machine
TWI813466B (en) * 2022-06-30 2023-08-21 大陸商西安奕斯偉材料科技股份有限公司 Grinding device and grinding method

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