TW201438824A - Wafer cleaning method and system thereof - Google Patents
Wafer cleaning method and system thereof Download PDFInfo
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- TW201438824A TW201438824A TW102112661A TW102112661A TW201438824A TW 201438824 A TW201438824 A TW 201438824A TW 102112661 A TW102112661 A TW 102112661A TW 102112661 A TW102112661 A TW 102112661A TW 201438824 A TW201438824 A TW 201438824A
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Abstract
Description
本發明是有關於一種晶圓的清洗系統及其方法,特別是有關於一種應用切換閥適時將輸出至製程頭內液體流向切換轉向至引流系統的矽晶圓片半導體的清洗系統及其方法。 BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a wafer cleaning system and method thereof, and more particularly to a cleaning system and method for a silicon wafer semiconductor that utilizes a switching valve to timely switch a liquid flow output to a processing head to a drainage system.
目前常見應用於矽晶圓清洗製程的晶圓清洗系統如圖1所示,係將待清洗的晶圓17通過以一設置在機台上的製程頭10之上製程頭11、下製程頭12之間的間隙,再於晶圓17經過該間隙時,接受間隙內常態噴發的化學液體13、去離子水14及乾燥流體15,並由設置在該製程頭10上的迴水管路18吸取多餘流體(液體)到桶槽16內。 The wafer cleaning system currently used in the 矽 wafer cleaning process is as shown in FIG. 1 , and the wafer 17 to be cleaned is passed through a processing head 10 disposed on the machine head 10 and a lower processing head 12 . The gap between the first and second wafers 17 receives the chemical liquid 13, the deionized water 14 and the drying fluid 15 which are normally ejected in the gap, and is sucked up by the return water pipe 18 provided on the process head 10. The fluid (liquid) is inside the tank.
當上述清洗晶圓時,上製程頭11、下製程頭12分別同時供給3000 ml/m、2000 ml/m的化學液體13及3000 ml/m、2000ml/m的去離子水14,並在同時上製程頭11、下製程頭12的迴水管路18的小吸取孔無法吸取多餘流體(液體)而導致液體殘留在晶圓上,導致晶背沾濕(Backside wetting)以及拖曳痕缺陷(Exit mark defect),而殘留在晶圓表面的殘留液體致使晶圓表面氧化以及過度蝕刻,導致銅錫面遭去除。另外,為了將製程頭多餘液體(廢液)吸到桶槽內,一般會在迴水管路上設有控制閥、桶槽上設有壓力量計元件,當上述控制閥、壓力量計元件衰退時,將使更大量廢液吸收不回桶槽,導致晶圓發生沾濕(wetting)的問題。 When the wafer is cleaned, the upper processing head 11 and the lower processing head 12 simultaneously supply 3000 ml/m, 2000 ml/m of the chemical liquid 13 and 3000 ml/m, 2000 ml/m of deionized water 14 at the same time. The small suction holes of the upper process head 11 and the lower process head 12 of the return pipe 18 cannot absorb excess fluid (liquid) and cause liquid to remain on the wafer, resulting in backside wetting and drag marks (Exit mark) The residual liquid remaining on the surface of the wafer causes oxidation and over-etching of the wafer surface, resulting in the removal of the copper tin surface. In addition, in order to suck excess liquid (waste liquid) from the process head into the tank, a control valve is generally provided on the return pipe, and a pressure gauge component is arranged on the tank, when the control valve and the pressure gauge component are degraded. This will cause a larger amount of waste liquid to be absorbed into the tank, causing the wafer to become wet.
本發明目的係提供一種晶圓清洗系統及其方法,在液體供應單元與清洗製程頭之間增設以電控單元控制的液體引流單元,使該液體供應單元供給清洗製程頭之液體量可校調至合理化程度。 The object of the present invention is to provide a wafer cleaning system and a method thereof, wherein a liquid drainage unit controlled by an electronic control unit is added between the liquid supply unit and the cleaning processing head, so that the liquid supply unit can supply the cleaning processing head. To the degree of rationalization.
為達成上述目的,本發明提供之晶圓清洗系統包含:一製程頭具有一上製程頭、一下製程頭,上、下製程頭各以一個對應面彼此相對並形成一間隙,每個對應面上配置複數個噴嘴。一液體吸取單元,包含形成於該上製程頭上用以抽吸液體的外部迴水管路和內部迴水管路、形成於該下製程頭上用以抽吸液體的外部迴水管路和內部迴水管路以及與該些外部迴水管路和內部迴水管路相連通並收集液體的桶槽。一輸送單元用以應用一承載台移動該晶圓,使接近或遠離該製程頭,並保持該晶圓表面相對於該些對應面。一液體供應單元,係以一第一輸入管路與該些上製程頭的部分噴嘴相連通、以一第二輸入管路與該些下製程頭的部分噴嘴相連通、以一第三輸入管路與該些上製程頭的部分噴嘴相連通、以一第四輸入管路與該些下製程頭的部分噴嘴相連通。一液體引流單元,係分別在該第一輸入管路、第二輸入管路、第三輸入管路及第四輸入管路上設置一第一切換閥、一第二切換閥、一第三切換閥及一第四切換閥,該第一切換閥、該第二切換閥、該第三切換閥及該第四切換閥並分別以一第一引流管路、第二引流管路、第三引流管路及第四引流管路連通該桶槽或連通一回收桶槽。一電控單元根據不同的輸入訊號分別切換該第一切換閥、該第二切換閥、該第三切換閥及該第四切換閥的液體流向。 To achieve the above object, the wafer cleaning system of the present invention comprises: a process head having an upper processing head and a lower processing head, wherein the upper and lower processing heads respectively face each other with a corresponding surface and form a gap, each corresponding surface Configure multiple nozzles. a liquid suction unit comprising an external return pipe and an internal return pipe formed on the upper process head for pumping liquid, an external return pipe and an internal return pipe formed on the lower process head for pumping liquid, and A tank that communicates with the external return line and the internal return line and collects liquid. A transport unit is configured to apply a carrier to move the wafer closer to or away from the process head and to maintain the wafer surface relative to the corresponding surfaces. a liquid supply unit is connected to a part of the nozzles of the upper processing heads by a first input line, and is connected to a part of the nozzles of the lower processing heads by a second input line, and a third input tube The road is in communication with a portion of the nozzles of the upper processing heads, and is connected to a portion of the nozzles of the lower processing heads by a fourth input line. a liquid draining unit is provided with a first switching valve, a second switching valve and a third switching valve on the first input line, the second input line, the third input line and the fourth input line respectively And a fourth switching valve, the first switching valve, the second switching valve, the third switching valve and the fourth switching valve are respectively a first drainage line, a second drainage line, and a third drainage tube The road and the fourth drainage line communicate with the tank or communicate with a recovery tank. An electronic control unit switches the liquid flow directions of the first switching valve, the second switching valve, the third switching valve and the fourth switching valve according to different input signals.
為達成上述目的,本發明提供之晶圓清洗方法包含:應用該輸送單元之該承載台承載該晶圓,使其沿一第一方向行進而進入該間隙,且當該承載台位於該第一位置時,觸發該距離感測單元產生該第一訊號;該電控單元根據該第一訊號切換該第一切換閥、該第二切換閥、該第三切換閥及該第四切換閥轉向,該使該液體供應單元內之液體引流至該桶槽或該回收桶槽;該電控單元根據該第一訊號作動該第一至該第四吸液閥,以分別將其所屬區段管路內的液體吸回排水系統;當該承載台沿該第一方向的反向之一第二方向行進而進入該間隙,且當該承載台位於該第二位置時,觸發該距離感測單元產生該第二訊號;該電控單元根據該第二訊號切換該第一切換閥、該第二切換閥、該第三切換閥及該第四切換閥轉向,使該第一至第四輸入管路內的液體流向該製程頭;以及該電控單元根據該第二訊號停止該第一至該第四吸液閥之吸回動作。 In order to achieve the above object, a wafer cleaning method provided by the present invention includes: the carrier using the transport unit carries the wafer to travel in a first direction to enter the gap, and when the carrier is located at the first In the position, the distance sensing unit is triggered to generate the first signal; the electronic control unit switches the first switching valve, the second switching valve, the third switching valve and the fourth switching valve according to the first signal, Discharging the liquid in the liquid supply unit to the tank or the recovery tank; the electronic control unit actuates the first to the fourth liquid suction valve according to the first signal to respectively respectively belong to the section pipeline The liquid is sucked back into the drainage system; when the stage travels in a second direction opposite to the first direction to enter the gap, and when the stage is located in the second position, triggering the distance sensing unit to generate The second signal; the electronic control unit switches the first switching valve, the second switching valve, the third switching valve and the fourth switching valve according to the second signal to make the first to fourth input lines The liquid inside flows to the process head The electronic control unit is stopped and the second signal according to the first to the fourth back to the suction operation of the suction valve.
本發明之特點在於,本發明經旁通(引流)晶圓清洗製程時使用之化學液體(例如硫酸與氫氟酸)及去離子水(DIW),進而解決習知機台因殘餘化學液體所導致的晶背沾濕及拖曳痕缺陷問題。另外,因本發明的液體噴發量可經過適當調整,可解決迴水管路上的控制閥、桶槽上的壓力量計元件衰退時,將使更大量廢液吸收不回桶槽,導致晶圓發生沾濕(wetting)的問題。 The invention is characterized in that the chemical liquid (such as sulfuric acid and hydrofluoric acid) and deionized water (DIW) used in the bypass (drainage) wafer cleaning process are used to solve the conventional chemical solution of the conventional machine. Caused by crystal back wet and drag mark defects. In addition, since the liquid ejecting amount of the present invention can be appropriately adjusted, it can solve the problem that the control valve on the return pipe and the pressure gauge component on the tank groove are degraded, so that a larger amount of waste liquid can be absorbed without returning to the tank groove, resulting in wafer generation. Wetting problem.
10‧‧‧製程頭 10‧‧‧Process head
11‧‧‧上製程頭 11‧‧‧Upper head
12‧‧‧下製程頭 12‧‧‧Next process head
13‧‧‧化學液體 13‧‧‧Chemical liquid
14‧‧‧去離子水 14‧‧‧Deionized water
15‧‧‧乾燥流體 15‧‧‧Drying fluid
16‧‧‧桶槽 16‧‧‧ barrel
17‧‧‧晶圓 17‧‧‧ Wafer
18‧‧‧迴水管路 18‧‧‧return pipe
20‧‧‧晶圓 20‧‧‧ wafer
30‧‧‧製程頭 30‧‧‧Processing head
31‧‧‧上製程頭 31‧‧‧Upper head
311‧‧‧對應面 311‧‧‧ corresponding face
312‧‧‧噴嘴 312‧‧‧ nozzle
32‧‧‧下製程頭 32‧‧‧Down head
321‧‧‧對應面 321‧‧‧ corresponding face
322‧‧‧噴嘴 322‧‧‧Nozzles
33‧‧‧間隙 33‧‧‧ gap
34‧‧‧清洗區 34‧‧‧Clean area
35‧‧‧沖洗區 35‧‧‧washing area
36‧‧‧吹乾區 36‧‧‧Blow dry area
40‧‧‧液體吸取單元 40‧‧‧Liquid suction unit
41‧‧‧外部迴水管路 41‧‧‧External return pipe
42‧‧‧內部迴水管路 42‧‧‧Internal return line
43‧‧‧桶槽 43‧‧‧ barrel
50‧‧‧輸送單元 50‧‧‧Conveying unit
51‧‧‧承載台 51‧‧‧Loading station
52‧‧‧第一方向 52‧‧‧First direction
53‧‧‧第二方向 53‧‧‧second direction
60‧‧‧液體供應單元 60‧‧‧Liquid supply unit
61‧‧‧第一輸入管路 61‧‧‧First input line
62‧‧‧第二輸入管路 62‧‧‧Second input line
63‧‧‧第三輸入管路 63‧‧‧ third input line
64‧‧‧第四輸入管路 64‧‧‧fourth input line
70‧‧‧液體引流單元 70‧‧‧Liquid drainage unit
71‧‧‧第一切換閥 71‧‧‧First switching valve
711‧‧‧第一引流管路 711‧‧‧First drainage line
712‧‧‧第一吸液閥 712‧‧‧First suction valve
72‧‧‧第二切換閥 72‧‧‧Second switching valve
721‧‧‧第二引流管路 721‧‧‧Second drainage line
722‧‧‧第二吸液閥 722‧‧‧Second suction valve
73‧‧‧第三切換閥 73‧‧‧ Third switching valve
731‧‧‧第三引流管路 731‧‧‧ Third drainage line
732‧‧‧第三吸液閥 732‧‧‧ Third suction valve
74‧‧‧第四切換閥 74‧‧‧fourth switching valve
741‧‧‧第四引流管路 741‧‧‧fourth drainage line
742‧‧‧第四吸液閥 742‧‧‧fourth suction valve
75‧‧‧排水系統 75‧‧‧Drainage system
76‧‧‧回收桶槽 76‧‧‧Recycling tank
77‧‧‧流量控制閥 77‧‧‧Flow control valve
80‧‧‧電控單元 80‧‧‧Electronic control unit
81‧‧‧第一電磁閥 81‧‧‧First solenoid valve
82‧‧‧第二電磁閥 82‧‧‧Second solenoid valve
83‧‧‧第三電磁閥 83‧‧‧The third solenoid valve
84‧‧‧第四電磁閥 84‧‧‧fourth solenoid valve
90‧‧‧距離感測單元 90‧‧‧Distance sensing unit
91‧‧‧第一訊號 91‧‧‧First signal
92‧‧‧第二訊號 92‧‧‧second signal
A‧‧‧第一位置 A‧‧‧ first position
B‧‧‧第二位置 B‧‧‧second position
C‧‧‧虛擬分割線 C‧‧‧virtual dividing line
D‧‧‧化學液體 D‧‧‧Chemical liquid
E‧‧‧去離子水 E‧‧‧Deionized water
F‧‧‧乾燥流體 F‧‧‧Drying fluid
X‧‧‧路徑 X‧‧‧ path
Xx‧‧‧起點 Starting point of Xx‧‧
Xy‧‧‧終點 Xy‧‧‧ end point
步驟S10~步驟S60‧‧‧流程步驟 Step S10~Step S60‧‧‧ Process Step
圖1繪示先前技術之晶圓清洗系統之系統方塊圖。 1 is a block diagram of a system of a prior art wafer cleaning system.
圖2繪示本發明之晶圓清洗系統之清洗作業立體示意圖。 2 is a perspective view showing the cleaning operation of the wafer cleaning system of the present invention.
圖3繪示本發明之晶圓清洗系統一實施例的系統方塊圖。 3 is a system block diagram of an embodiment of a wafer cleaning system of the present invention.
圖4繪示本發明之晶圓清洗系統在輸入管路設置吸液閥之實施例的系統方塊圖。 4 is a system block diagram of an embodiment of a wafer cleaning system of the present invention in which an aspiration valve is disposed in an input line.
圖5繪示本發明之晶圓清洗系統之距離感測單元實施例的系統方塊圖。 5 is a system block diagram of an embodiment of a distance sensing unit of the wafer cleaning system of the present invention.
圖6繪示本發明之晶圓清洗系統之製程頭與液體引流單元、距離感測單元及電控單元協同作業示意之系統方塊圖。 6 is a system block diagram showing a schematic operation of a processing head of the wafer cleaning system of the present invention in cooperation with a liquid drainage unit, a distance sensing unit, and an electronic control unit.
圖7繪示本發明之晶圓清洗系統之製程頭與距離感測單元及輸送單元協同作業示意之系統方塊圖。 7 is a system block diagram showing a schematic operation of a process head of the wafer cleaning system of the present invention in cooperation with a distance sensing unit and a transport unit.
圖8繪示本發明之晶圓清洗方法之步驟流程圖。 FIG. 8 is a flow chart showing the steps of the wafer cleaning method of the present invention.
茲配合圖式說明本發明之實施例如下。 The embodiment of the present invention will be described with reference to the drawings.
首先請參照圖2繪示的本發明之晶圓清洗系統之清洗作業立體示意圖、圖3繪示的本發明之晶圓清洗系統一實施例的系統方塊圖以及圖4繪示的本發明之晶圓清洗系統在輸入管路設置吸液閥之實施例的系統方塊圖。本實施例中的晶圓清洗系統,包含:一製程頭30、一液體吸取單元40、一輸送單元50、一液體供應單元60、一液體引流單元70以及一電控單元80。該製程頭30係包括有一上製程頭31、一下製程頭32,該上、下製程頭(31,32)各以一個對應面(311,321)彼此相對並形成一間隙33,每個對應面(311,321)上配置複數個噴嘴(312,322)(如圖6所示)。液體吸取單元40係包含分別形成在該上製程頭31及下製程頭32上用以抽吸在間隙33內的液體的外部迴水管路41和內部迴水管路42,以及 與該些外部迴水管路41和內部迴水管路42相連通並收集液體的桶槽43。輸送單元50用以應用一承載台51移動該晶圓20,使接近或遠離該製程頭30,並在移動過程中保持該晶圓20的上、下表面相對於該些對應面(311,321)。液體供應單元60係以一第一輸入管路61與該些上製程頭31的部分噴嘴312相連通、以一第二輸入管路62與該些下製程頭32的部分噴嘴312相連通、以一第三輸入管路63與該些上製程頭31的部分噴嘴312相連通、以一第四輸入管路64與該些下製程頭32的部分噴嘴312相連通。液體供應單元60,供應給該第一輸入管路61和第三輸入管路63的液體為化學液體D、供應給該第二輸入管路62和第四輸入管路64的液體為去離子水E。液體引流單元70係分別在該第一輸入管路61、第二輸入管路62、第三輸入管路63及第四輸入管路64上設置一第一切換閥71、一第二切換閥72、一第三切換閥73及一第四切換閥74,該第一切換閥71、該第二切換閥72、該第三切換閥73及該第四切換閥74並分別以一第一引流管路711、第二引流管路721、第三引流管路731及第四引流管路741連通該桶槽43或者另外連通到一回收桶槽76,以與收集廢液的桶槽43相區隔。電控單元80根據不同的輸入訊號(例如以距離感測器依據感測的承載台51位置產生對應的偵測訊號,詳如後述)分別以第一至第四電磁閥(81,82,83,84)切換該第一切換閥71、該第二切換閥72、該第三切換閥73及該第四切換閥74的液體流向。 First, a schematic diagram of a cleaning operation of the wafer cleaning system of the present invention, a system block diagram of an embodiment of the wafer cleaning system of the present invention illustrated in FIG. 3, and a crystal of the present invention illustrated in FIG. A block diagram of an embodiment of a circular cleaning system in which an aspiration valve is placed in an input line. The wafer cleaning system in this embodiment includes a process head 30, a liquid suction unit 40, a transport unit 50, a liquid supply unit 60, a liquid drain unit 70, and an electronic control unit 80. The process head 30 includes an upper process head 31 and a lower process head 32. The upper and lower process heads (31, 32) are opposite each other with a corresponding surface (311, 321) and form a gap 33, each corresponding surface (311, 321). A plurality of nozzles (312, 322) are disposed on the substrate (as shown in FIG. 6). The liquid suction unit 40 includes an external return water line 41 and an internal return water line 42 respectively formed on the upper processing head 31 and the lower processing head 32 for sucking the liquid in the gap 33, and A tank tank 43 that communicates with the external return water line 41 and the internal return water line 42 and collects liquid. The transport unit 50 is configured to apply a loading table 51 to move the wafer 20 to be close to or away from the processing head 30, and to maintain the upper and lower surfaces of the wafer 20 relative to the corresponding surfaces (311, 321) during the moving process. The liquid supply unit 60 communicates with a portion of the nozzles 312 of the upper processing heads 31 via a first input line 61, and communicates with a portion of the nozzles 312 of the lower processing heads 32 via a second input line 62. A third input line 63 communicates with a portion of the nozzles 312 of the upper processing heads 31 and communicates with a portion of the nozzles 312 of the lower processing heads 32 via a fourth input line 64. The liquid supply unit 60, the liquid supplied to the first input line 61 and the third input line 63 is a chemical liquid D, and the liquid supplied to the second input line 62 and the fourth input line 64 is deionized water. E. The liquid draining unit 70 is provided with a first switching valve 71 and a second switching valve 72 on the first input line 61, the second input line 62, the third input line 63 and the fourth input line 64, respectively. a third switching valve 73 and a fourth switching valve 74, the first switching valve 71, the second switching valve 72, the third switching valve 73 and the fourth switching valve 74 are respectively a first drainage tube The road 711, the second drainage line 721, the third drainage line 731, and the fourth drainage line 741 communicate with the tank 43 or otherwise communicate with a recovery tank 76 to separate from the tank 43 for collecting waste liquid. . The electronic control unit 80 generates corresponding detection signals according to different positions of the input signals according to the sensed position of the load-bearing table 51, as described later, as follows: first to fourth solenoid valves (81, 82, 83) 84) switching the liquid flow direction of the first switching valve 71, the second switching valve 72, the third switching valve 73, and the fourth switching valve 74.
請對照圖5所示。另外,為調整前述液體供應單元60的液體供應量,在一實施例中,第一引流管路711、第二引流管路721、第三引流管路731及第四引流管路741之每一引流管上 設置有一流量控制閥77,以控制進入該桶槽43或該回收桶槽76的液體流量。 Please refer to Figure 5. In addition, in order to adjust the liquid supply amount of the liquid supply unit 60, in one embodiment, each of the first drainage line 711, the second drainage line 721, the third drainage line 731, and the fourth drainage line 741 Drainage tube A flow control valve 77 is provided to control the flow of liquid into the tank 43 or the recovery tank 76.
請參照圖5,在一實施例中,該第一切換閥71與該上製程頭31之間設置一第一吸液閥712、該第二切換閥72與該上製程頭31之間設置一第二吸液閥722、該第三切換閥73與該下製程頭32之間設置一第三吸液閥732、該第四切換閥74與該下製程頭32之間設置一第四吸液閥742,再於該第一至該第四吸液閥(712,722,732,742)分別連接一排水系統75以排掉迴流的液體。 Referring to FIG. 5 , in an embodiment, a first liquid suction valve 712 , a second switching valve 72 , and the upper processing head 31 are disposed between the first switching valve 71 and the upper processing head 31 . A third liquid suction valve 722 is disposed between the second liquid suction valve 722, the third switching valve 73 and the lower processing head 32, and a fourth liquid suction is disposed between the fourth switching valve 74 and the lower processing head 32. The valve 742 is further connected to the drainage system 75 by the first to the fourth liquid suction valves (712, 722, 732, 742) to drain the returned liquid.
請參照圖5繪示的本發明之晶圓清洗系統之距離感測單元實施例的系統方塊圖、圖6繪示的本發明之晶圓清洗系統之製程頭與液體引流單元、距離感測單元及電控單元協同作業示意之系統方塊圖以及圖7繪示的本發明之晶圓清洗系統之製程頭與距離感測單元及輸送單元協同作業示意之系統方塊圖。在一實施例中,可再設置一距離感測單元90用以偵測該承載台51的位置,並據以觸發對應訊號。進一步言,該距離感測單元90偵測到該承載台51位於一第一位置A時觸發一第一訊號91,該電控單元80根據該第一訊號91分別以該第一電磁閥81、該第二電磁閥82、該第三電磁閥83與該第四電磁閥84切換該第一切換閥71、該第二切換閥72、該第三切換閥73及該第四切換閥74的轉向,使該第一至第四輸入管路(61,62,63,64)內的液體分別經由該第一引流管路711、該第二引流管路721、該第三引流管路731及該第四引流管路741流向該桶槽43或該回收桶槽76,同時作動該第一至該第四吸液閥(712,722,732,742),分別將該所屬區段管路內的液體吸回排水系統75;該距離感測單元90偵測到該承載台51位於一第二 位置B時觸發一第二訊號92,該電控單元80根據該第二訊號92切換該第一至第四切換閥(71,72,73,74)的轉向,使該第一至第四輸入管路(61,62,63,64)內的液體流向該製程頭30,同時停止該第一至該第四吸液閥(712,722,732,742)之回吸動作。 Please refer to FIG. 5 , which is a system block diagram of an embodiment of a distance sensing unit of the wafer cleaning system of the present invention, and a process head and a liquid drainage unit and a distance sensing unit of the wafer cleaning system of the present invention illustrated in FIG. 6 . FIG. 7 is a system block diagram showing the cooperative operation of the electronic control unit and the system block diagram of the processing head of the wafer cleaning system of the present invention and the distance sensing unit and the transport unit. In an embodiment, a distance sensing unit 90 can be further configured to detect the position of the carrying platform 51 and trigger the corresponding signal accordingly. Further, the distance sensing unit 90 detects that the loading station 51 is in a first position A, and triggers a first signal 91. The electronic control unit 80 uses the first electromagnetic valve 81 according to the first signal 91. The second electromagnetic valve 82, the third electromagnetic valve 83 and the fourth electromagnetic valve 84 switch the steering of the first switching valve 71, the second switching valve 72, the third switching valve 73 and the fourth switching valve 74 The liquid in the first to fourth input lines (61, 62, 63, 64) is respectively passed through the first drainage line 711, the second drainage line 721, the third drainage line 731, and the The fourth drainage line 741 flows to the tank 43 or the recovery tank 76, and simultaneously activates the first to fourth suction valves (712, 722, 732, 742), respectively sucking the liquid in the associated section pipeline back to the drainage system 75. The distance sensing unit 90 detects that the carrying platform 51 is located at a second When the position B is triggered, a second signal 92 is triggered, and the electronic control unit 80 switches the steering of the first to fourth switching valves (71, 72, 73, 74) according to the second signal 92 to make the first to fourth inputs. The liquid in the line (61, 62, 63, 64) flows to the process head 30 while stopping the suckback action of the first to fourth pipetting valves (712, 722, 732, 742).
續請再參考圖7所示。上述該上、下製程頭(31,32)之該對應面(311,321)依該晶圓20進入該間隙33的順序,依序為分為清洗區34、沖洗區35及吹乾區36,該些連接該第一輸入管路61的噴嘴322與連接該第四輸入管路64的噴嘴322係位於該清洗區34,該些連接該第二輸入管路62噴嘴322與連接該第三輸入管路63噴嘴322係位於該沖洗區35,位於該沖洗區35內鄰近該沖洗區35內與該吹乾區36交界處定義有一虛擬分割線C,在該承載台51輸送該晶圓20移動的路徑X中,該承載台51末端對齊該虛擬分割線C時,該承載台51位於該第一位置A、該承載台51前端對齊該虛擬分割線C時,該承載台51位於該第二位置B。 Please refer to Figure 7 again. The corresponding surfaces (311, 321) of the upper and lower processing heads (31, 32) are sequentially divided into a cleaning area 34, a processing area 35, and a drying area 36 according to the order in which the wafer 20 enters the gap 33. The nozzle 322 connecting the first input line 61 and the nozzle 322 connecting the fourth input line 64 are located in the cleaning area 34, and the second input line 62 is connected to the nozzle 322 and connected to the third input tube. A nozzle 63 is located in the flushing zone 35, and a virtual dividing line C is defined in the flushing zone 35 adjacent to the flushing zone 35 and the blow-drying zone 36. The carrier 20 transports the wafer 20 to move. In the path X, when the end of the loading platform 51 is aligned with the virtual dividing line C, the loading platform 51 is located at the first position A, and the front end of the loading platform 51 is aligned with the virtual dividing line C, the loading platform 51 is located at the second position. B.
上述實施例中,製程頭30中也包含乾燥流體F之噴發設置,且其設置方式與係先技術相同,在本發明中未並加以變動,故不贅述。 In the above embodiment, the process head 30 also includes the ejecting arrangement of the drying fluid F, and the arrangement thereof is the same as that of the prior art, and is not changed in the present invention, and therefore will not be described again.
請參見圖8所繪示的本發明之晶圓清洗方法之步驟流程圖及圖7之本發明之晶圓清洗系統之製程頭與距離感測單元及輸送單元協同作業示意之系統方塊圖。本實施例之晶圓清洗方法,其適用於前述晶圓清洗系統實施例,而該晶圓清洗方法包括下列步驟:步驟S10,應用該輸送單元50中的承載台51承載該預備進行清洗加工的晶圓20,承載台51及晶圓20沿一第一方向 52行進而進入該間隙33,且當該承載台51位於如上述定對的該第一位置A時,即觸發該距離感測單元90以產生該第一訊號91;步驟S20,該電控單元80根據該第一訊號91的觸發,繼而進行該第一至第四切換閥(71,72,73,74)的轉向切換,使該液體供應單元60內之液體引流至該桶槽43或該回收桶槽76;步驟S30,該電控單元80根據該第一訊號91的產生,作動該第一至該第四吸液閥(712,722,732,742),以分別將其所屬區段管路內的液體吸回排水系統75,以保持管內飽管,避免異物流進管內造成污染;步驟S40,當該承載台51沿該第二方向53(與該第一方向52反向)行進而進入該間隙33,且當該承載台51位於該第二位置B時,觸發該距離感測單元90產生該第二訊號92;步驟S50,該電控單元80根據該第二訊號92的產生,進而切換該第一至第四切換閥(71,72,73,74)轉向,使該第一至第四輸入管路(61,62,63,64)內的液體流向該製程頭30;以及步驟S60,該電控單元80根據該第二訊號92停止該第一至該第四吸液閥(712,722,732,742)之吸回動作。 Please refer to FIG. 8 for a flow chart of the steps of the wafer cleaning method of the present invention and FIG. 7 for a schematic diagram of the system of the wafer cleaning system of the present invention in cooperation with the distance sensing unit and the transport unit. The wafer cleaning method of the embodiment is applicable to the foregoing wafer cleaning system embodiment, and the wafer cleaning method comprises the following steps: Step S10, applying the loading platform 51 in the conveying unit 50 to carry the cleaning processing. Wafer 20, carrier 51 and wafer 20 along a first direction 52 proceeds to enter the gap 33, and when the carrier 51 is located at the first position A as set above, the distance sensing unit 90 is triggered to generate the first signal 91; and the electronic control unit is step S20 80, according to the triggering of the first signal 91, the steering switching of the first to fourth switching valves (71, 72, 73, 74) is performed, and the liquid in the liquid supply unit 60 is drained to the tank 43 or the Recycling the tank 76; in step S30, the electronic control unit 80 activates the first to the fourth liquid suction valves (712, 722, 732, 742) according to the generation of the first signal 91 to respectively suck the liquid in the pipeline of the section to which it belongs Returning the drainage system 75 to maintain the saturation tube in the tube to avoid contamination in the foreign material inlet pipe; in step S40, when the stage 51 travels in the second direction 53 (opposite the first direction 52), enters the gap 33, and when the carrying station 51 is located in the second position B, triggering the distance sensing unit 90 to generate the second signal 92; in step S50, the electronic control unit 80 switches according to the generation of the second signal 92. The first to fourth switching valves (71, 72, 73, 74) are turned to make the first to fourth input lines (61, 62, 63) The liquid in 64) flows to the process head 30; and in step S60, the electronic control unit 80 stops the suction operation of the first to fourth liquid suction valves (712, 722, 732, 742) according to the second signal 92.
另外,在一實施例中,當該距離感測單元90產生該第一訊號91時,中斷該晶圓清洗系統之的清洗作業,使該製程頭30之該清洗區34和該沖洗區35停止噴發液體,使該間隙33的水幕作用關閉、當該距離感測單元90產生該第二訊號92時,啟動該晶圓清洗系統的清洗作業,使該製程頭30之該清洗區34和該沖洗區35噴發出液體,使該間隙33產生水幕作用。當然,與前述系統實施例相同,本方法實施例中,該液體供應單元60供應給 該第一輸入管路61和第三輸入管路63的液體為化學液體D、供應給該第二輸入管路62和第四輸入管路64的液體為去離子水E。 In addition, in an embodiment, when the distance sensing unit 90 generates the first signal 91, the cleaning operation of the wafer cleaning system is interrupted, and the cleaning area 34 and the processing area 35 of the processing head 30 are stopped. Ejecting the liquid to close the water curtain of the gap 33, and when the distance sensing unit 90 generates the second signal 92, starting the cleaning operation of the wafer cleaning system, the cleaning area 34 of the processing head 30 and the The flushing zone 35 ejects liquid, causing the gap 33 to create a water curtain effect. Of course, as in the foregoing system embodiment, in the embodiment of the method, the liquid supply unit 60 is supplied to The liquid of the first input line 61 and the third input line 63 is a chemical liquid D, and the liquid supplied to the second input line 62 and the fourth input line 64 is deionized water E.
綜上所述,本發明經引流晶圓清洗製程時使用之硫酸、氫氟酸等化學液體及去離子水,進而解決習知機台因殘餘化學液體所導致的晶背沾濕及拖曳痕缺陷問題。另,本發明的液體噴發量可經過適當調整,以解決迴水管路上的控制閥、桶槽上的壓力量計元件衰退時,將使更大量廢液吸收不回桶槽,導致晶圓發生沾濕(wetting)的問題。。 In summary, the present invention uses a chemical liquid such as sulfuric acid, hydrofluoric acid, and deionized water used in the flow-through wafer cleaning process to solve the problem of crystal back wetness and drag marks caused by residual chemical liquid in the conventional machine. problem. In addition, the liquid ejecting amount of the present invention can be appropriately adjusted to solve the problem that the control valve on the return pipe and the pressure gauge component on the tank groove are degraded, so that a larger amount of waste liquid is absorbed into the tank groove, resulting in wafer sticking. Wetting problem. .
前述舉例說明的技術手段實施方式或實施例,並非用來限定本發明專利實施之範圍。即凡與本發明專利申請範圍文義相符,或依本發明專利範圍所做的均等變化與修飾,皆為本發明專利範圍所涵蓋。 The above-described technical means embodiments or examples are not intended to limit the scope of implementation of the invention. That is, the equivalent changes and modifications made in accordance with the scope of the patent application of the present invention or the scope of the invention are covered by the scope of the invention.
20‧‧‧晶圓 20‧‧‧ wafer
30‧‧‧製程頭 30‧‧‧Processing head
31‧‧‧上製程頭 31‧‧‧Upper head
32‧‧‧下製程頭 32‧‧‧Down head
33‧‧‧間隙 33‧‧‧ gap
41‧‧‧外部迴水管路 41‧‧‧External return pipe
42‧‧‧內部迴水管路 42‧‧‧Internal return line
43‧‧‧桶槽 43‧‧‧ barrel
51‧‧‧承載台 51‧‧‧Loading station
60‧‧‧液體供應單元 60‧‧‧Liquid supply unit
61‧‧‧第一輸入管路 61‧‧‧First input line
62‧‧‧第二輸入管路 62‧‧‧Second input line
63‧‧‧第三輸入管路 63‧‧‧ third input line
64‧‧‧第四輸入管路 64‧‧‧fourth input line
71‧‧‧第一切換閥 71‧‧‧First switching valve
711‧‧‧第一引流管路 711‧‧‧First drainage line
712‧‧‧第一吸液閥 712‧‧‧First suction valve
72‧‧‧第二切換閥 72‧‧‧Second switching valve
721‧‧‧第二引流管路 721‧‧‧Second drainage line
722‧‧‧第二吸液閥 722‧‧‧Second suction valve
73‧‧‧第三切換閥 73‧‧‧ Third switching valve
731‧‧‧第三引流管路 731‧‧‧ Third drainage line
732‧‧‧第三吸液閥 732‧‧‧ Third suction valve
74‧‧‧第四切換閥 74‧‧‧fourth switching valve
741‧‧‧第四引流管路 741‧‧‧fourth drainage line
742‧‧‧第四吸液閥 742‧‧‧fourth suction valve
75‧‧‧排水系統 75‧‧‧Drainage system
76‧‧‧回收桶槽 76‧‧‧Recycling tank
77‧‧‧流量控制閥 77‧‧‧Flow control valve
80‧‧‧電控單元 80‧‧‧Electronic control unit
81‧‧‧第一電磁閥 81‧‧‧First solenoid valve
82‧‧‧第二電磁閥 82‧‧‧Second solenoid valve
83‧‧‧第三電磁閥 83‧‧‧The third solenoid valve
84‧‧‧第四電磁閥 84‧‧‧fourth solenoid valve
90‧‧‧距離感測單元 90‧‧‧Distance sensing unit
91‧‧‧第一訊號 91‧‧‧First signal
92‧‧‧第二訊號 92‧‧‧second signal
D‧‧‧化學液體 D‧‧‧Chemical liquid
E‧‧‧去離子水 E‧‧‧Deionized water
F‧‧‧乾燥流體 F‧‧‧Drying fluid
Claims (11)
Priority Applications (1)
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TW102112661A TW201438824A (en) | 2013-04-10 | 2013-04-10 | Wafer cleaning method and system thereof |
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TW102112661A TW201438824A (en) | 2013-04-10 | 2013-04-10 | Wafer cleaning method and system thereof |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI756570B (en) * | 2019-08-12 | 2022-03-01 | 南亞科技股份有限公司 | Wafer cleaning apparatus and operation method of the same |
CN114453321A (en) * | 2022-02-25 | 2022-05-10 | 上海普达特半导体设备有限公司 | Single wafer type wafer cleaning device |
-
2013
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI756570B (en) * | 2019-08-12 | 2022-03-01 | 南亞科技股份有限公司 | Wafer cleaning apparatus and operation method of the same |
CN114453321A (en) * | 2022-02-25 | 2022-05-10 | 上海普达特半导体设备有限公司 | Single wafer type wafer cleaning device |
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