TW201438291A - Manufacturing method for optical semiconductor device - Google Patents

Manufacturing method for optical semiconductor device Download PDF

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Publication number
TW201438291A
TW201438291A TW103104986A TW103104986A TW201438291A TW 201438291 A TW201438291 A TW 201438291A TW 103104986 A TW103104986 A TW 103104986A TW 103104986 A TW103104986 A TW 103104986A TW 201438291 A TW201438291 A TW 201438291A
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Taiwan
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stage
phosphor sheet
manufacturing
optical semiconductor
led
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TW103104986A
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Chinese (zh)
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Yasunari Ooyabu
Akito Ninomiya
Hisataka Ito
Shigehiro Umetani
Munehisa Mitani
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Nitto Denko Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0095Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0041Processes relating to semiconductor body packages relating to wavelength conversion elements

Abstract

This manufacturing method for an optical semiconductor device is a manufacturing method for an optical semiconductor device that covers an optical semiconductor element by a phosphor sheet. The method is provided with: a prototyping step which creates and evaluates a prototype; a determination step which, on the basis of the evaluation of the prototype, determines manufacturing conditions for manufacturing an optical semiconductor device; and a manufacturing step which manufactures the optical semiconductor device by, on the basis of the manufacturing conditions determined in the determination step, covering the optical semiconductor element by a B-stage phosphor sheet, and advancing the phosphor sheet to the C-stage. The prototyping step is provided with: a varnish preparation step which prepares varnish including phosphor and curable resin; a B-stage step which forms a B-stage phosphor sheet from the varnish; a C-stage step which advances the phosphor sheet of the stage to a C-stage; and an evaluation step which evaluates the C-stage phosphor sheet.

Description

光半導體裝置之製造方法 Optical semiconductor device manufacturing method

本發明係關於一種光半導體裝置之製造方法,詳細而言,係關於一種藉由螢光體片材被覆光半導體元件之光半導體裝置之製造方法。 The present invention relates to a method of fabricating an optical semiconductor device, and more particularly to a method of fabricating an optical semiconductor device in which an optical semiconductor device is coated with a phosphor sheet.

先前,已知藉由包含螢光體之螢光體片材將LED(Light-Emitting Diode,發光二極體)被覆並密封,從而製造LED裝置。 Conventionally, it has been known to manufacture an LED device by coating and sealing an LED (Light-Emitting Diode) with a phosphor sheet containing a phosphor.

於此種LED裝置中,藉由螢光體片材使自LED發出之光進行波長轉換,將經波長轉換之光照射至外部。 In such an LED device, the light emitted from the LED is wavelength-converted by the phosphor sheet, and the wavelength-converted light is irradiated to the outside.

自LED裝置照射之光之色溫除依存LED之發光波長以外,進而,較大地依存例如螢光體片材之光學特性,具體而言,為螢光體片材之形狀、螢光體片材對於LED之配置、螢光體片材中之螢光體之含有比率等。 The color temperature of the light irradiated from the LED device is different from the light-emitting wavelength of the LED, and further depends on, for example, the optical characteristics of the phosphor sheet, specifically, the shape of the phosphor sheet, and the phosphor sheet. The arrangement of the LEDs, the ratio of the phosphors in the phosphor sheet, and the like.

因此,作為可照射所期望之色溫之光之LED裝置的製造方法,提出以下之方法(例如,參照下述專利文獻1)。 Therefore, the following method is proposed as a method of manufacturing an LED device that can illuminate light of a desired color temperature (for example, refer to Patent Document 1 below).

即,於下述專利文獻1中,由注入螢光體之柔軟之膠囊材料預形成螢光體片材,使該螢光體片材覆蓋安裝於基板上之LED,其後,對LED施加電壓,使LED發光,從而測定色溫並進行檢查。 That is, in Patent Document 1 below, a phosphor sheet is preliminarily formed from a soft capsule material into which a phosphor is injected, and the phosphor sheet is covered with an LED mounted on the substrate, and thereafter, a voltage is applied to the LED. The LED is illuminated to determine the color temperature and to check.

於檢查中,若色溫適當,則於檢查後,藉由加熱,使螢光體片材硬化,並對LED及基板進行永久性層壓處理。 During the inspection, if the color temperature is appropriate, the phosphor sheet is cured by heating after the inspection, and the LED and the substrate are permanently laminated.

另一方面,於檢查中,若色溫不適當,則於檢查後,將螢光體 片材自LED及基板剝離,繼而,使其他種類之螢光體片材再次覆蓋安裝於基板上之LED,其後,以與上述相同之方式,進行檢查。 On the other hand, if the color temperature is not appropriate during the inspection, the phosphor will be used after the inspection. The sheet is peeled off from the LED and the substrate, and then another type of phosphor sheet is overlaid on the LED mounted on the substrate, and then inspected in the same manner as described above.

對於下述專利文獻1所提出之方法,若色溫不適當,則將螢光體片材更換為其他螢光體片材,另一方面,安裝於基板上之LED可直接再利用,故而提高基板及LED之良率。 In the method proposed in the following Patent Document 1, if the color temperature is not appropriate, the phosphor sheet is replaced with another phosphor sheet, and the LED mounted on the substrate can be directly reused, thereby improving the substrate. And the yield of LED.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利特開2007-123915號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2007-123915

然而,於上述專利文獻1所提出之方法中,硬化前之螢光體層藉由硬化,易於產生伴隨硬化收縮之翹曲等變形,若如此,則自LED發出之光之螢光體層中之光程長度發生變化。因此,硬化之螢光體層之光學特性、及檢查時之硬化前之螢光體層之光學特性產生較大之偏差(變動)。 However, in the method proposed in the above Patent Document 1, the phosphor layer before curing is hardened, and deformation such as warpage accompanying hardening shrinkage is apt to occur, and if so, light in the phosphor layer of light emitted from the LED is obtained. The length of the process changes. Therefore, the optical characteristics of the cured phosphor layer and the optical characteristics of the phosphor layer before curing at the time of inspection are largely deviated (varied).

其結果,有不易於獲得目標LED裝置之異常。 As a result, there is an abnormality in that the target LED device is not easily obtained.

又,於上述專利文獻1所提出之方法中,若使硬化前之螢光體片材於檢查之前硬化,則於檢查中,於色溫不適當之情形時,C階段化之螢光體片材接著於基板及LED,故而有無法再利用基板及LED之異常。 Further, in the method proposed in Patent Document 1, if the phosphor sheet before curing is cured before the inspection, the C-staged phosphor sheet is used when the color temperature is not appropriate during the inspection. After the substrate and the LED, there is an abnormality in the substrate and the LED that cannot be reused.

進而,根據上述專利文獻1所提出之方法,歸根究底,檢查每個製品,判斷色溫是否適當,於不適當之情形時,隨時更換螢光體片材,故而有無法充分提高LED裝置之製造效率之異常。 Further, according to the method proposed in the above Patent Document 1, in the final analysis, each product is inspected to determine whether the color temperature is appropriate, and the phosphor sheet is replaced at any time when it is not appropriate, so that the LED device cannot be sufficiently improved. Abnormal efficiency.

本發明之目的在於提供一種半導體裝置之製造方法,其可藉由一面使用B階段之螢光體片材,一面謀求製造效率之提高,並且提高製造條件之精度,而獲得發光可靠性優異之光半導體裝置。 An object of the present invention is to provide a method for producing a semiconductor device which can improve the manufacturing efficiency and improve the precision of manufacturing conditions by using a B-stage phosphor sheet while obtaining a light having excellent light-emitting reliability. Semiconductor device.

本發明之光半導體裝置之製造方法之特徵在於:其係藉由螢光體片材被覆光半導體元件者,其具備:試製步驟,其試製試製品並進行評價;決定步驟,其基於上述試製品之評價,決定用以製造上述光半導體裝置之製造條件;及製造步驟,其基於上述決定步驟所決定之上述製造條件,製造藉由B階段之上述螢光體片材被覆上述光半導體元件,並使該螢光體片材進行C階段化之上述光半導體裝置,上述試製步驟具備製備包含螢光體及硬化性樹脂之清漆之清漆製備步驟,由上述清漆形成B階段之上述螢光體片材之B階段化步驟,使B階段之上述螢光體片材進行C階段化之C階段化步驟,及評價C階段之上述螢光體片材之評價步驟。 A method of manufacturing an optical semiconductor device according to the present invention is characterized in that the photo-semiconductor element is coated with a phosphor sheet, and the photo-semiconductor element is provided with a trial production step for trial-manufacturing and evaluation of the prototype, and a determination step based on the prototype The evaluation determines a manufacturing condition for manufacturing the optical semiconductor device, and a manufacturing step of coating the optical semiconductor element by the phosphor sheet of the B stage based on the manufacturing condition determined by the determining step. In the optical semiconductor device in which the phosphor sheet is C-staged, the trial production step includes a varnish preparation step of preparing a varnish containing a phosphor and a curable resin, and the phosphor sheet is formed into a B-stage from the varnish. In the B-stage step, the C-stage step of the C-stage of the phosphor sheet of the B stage is performed, and the evaluation step of the phosphor sheet of the C stage is evaluated.

根據該方法,決定步驟係基於包含C階段之螢光體片材之試製品之評價,決定製造條件。並且,製造步驟係基於決定步驟所決定之製造條件,製造光半導體裝置。 According to this method, the determination step determines the manufacturing conditions based on the evaluation of the prototype containing the C-stage phosphor sheet. Further, the manufacturing process is based on the manufacturing conditions determined by the determining step, and the optical semiconductor device is manufactured.

若如此,則成為評價對象之試製品之螢光體片材為C階段。因此,於製造條件中,考慮到於螢光體片材中,由上述C階段化所引起之光學特性之變動。 In this case, the phosphor sheet of the prototype to be evaluated is in the C stage. Therefore, in the production conditions, variations in optical characteristics caused by the above-described C-stage are considered in the phosphor sheet.

其結果,於製造步驟中,可製造發光可靠性優異之光半導體裝置。 As a result, in the manufacturing step, an optical semiconductor device excellent in light-emitting reliability can be manufactured.

並且,基於根據試製品之評價而決定之製造條件,而製造光半導體裝置,故而可以優異之精度量產光半導體裝置。因此,可充分地提高光半導體裝置之製造效率。 Further, since the optical semiconductor device is manufactured based on the manufacturing conditions determined based on the evaluation of the prototype, the optical semiconductor device can be mass-produced with excellent precision. Therefore, the manufacturing efficiency of the optical semiconductor device can be sufficiently improved.

又,於本發明之光半導體裝置之製造方法中,較佳為於上述C階段化步驟中,藉由上述螢光體片材被覆上述光半導體元件,於上述評價步驟中,評價藉由上述螢光體片材被覆上述光半導體元件之上述光半導體裝置。 Further, in the method of manufacturing an optical semiconductor device according to the present invention, preferably, in the step of step C, the photo-semiconductor element is coated on the phosphor sheet, and in the evaluation step, the firefly is evaluated. The optical sheet is coated with the optical semiconductor device of the optical semiconductor element.

根據該方法,於C階段化步驟中,藉由螢光體片材被覆光半導體元件。即,可將藉由螢光體片材被覆光半導體元件之試製品與作為實際製品之光半導體裝置設為相同之構成。 According to this method, in the C-stage step, the optical semiconductor element is coated with the phosphor sheet. That is, the prototype of the optical semiconductor element coated with the phosphor sheet can be configured in the same manner as the optical semiconductor device as the actual product.

因此,可基於構成與實際製品相同之試製品的評價,決定實際製品之製造條件。 Therefore, the manufacturing conditions of the actual product can be determined based on the evaluation of the prototype which constitutes the same product as the actual product.

其結果,可更進一步高精度地決定製造條件,可製造發光可靠性更進一步優異之光半導體裝置。 As a result, the manufacturing conditions can be determined with higher precision, and an optical semiconductor device having further excellent light-emitting reliability can be manufactured.

又,於本發明之光半導體裝置之製造方法中,較佳為上述試製步驟進而具備試製條件決定步驟,其基於在本次以前試製上述試製品之試製條件及評價之資訊,決定用以本次試製上述試製品之試製條件。 Further, in the method of manufacturing an optical semiconductor device according to the present invention, it is preferable that the trial production step further includes a trial condition determining step, which is determined based on the trial production conditions and evaluation information of the prototype before the current trial. Trial production conditions for the above prototypes.

根據該方法,基於在本次以前試製試製品之試製條件及評價之資訊,決定用以本次試製試製品之試製條件,故而可累積於本次以前進行試製之試製條件,可基於累積之試製條件及評價,提高製造條件之精度。因此,可獲得發光可靠性優異之光半導體裝置。 According to this method, based on the trial conditions and evaluation information of the prototypes produced in the previous trial, the trial production conditions for the trial production of the prototypes are determined, so that the trial production conditions for the trial production before this time can be accumulated, and the trial production conditions based on the accumulation can be performed. Conditions and evaluation to improve the accuracy of manufacturing conditions. Therefore, an optical semiconductor device excellent in light emission reliability can be obtained.

根據本發明,可更進一步高精度地決定製造條件,可獲得發光可靠性更優異之光半導體裝置。又,可充分地提高光半導體裝置之製造效率。 According to the present invention, the manufacturing conditions can be determined with higher precision, and an optical semiconductor device having more excellent light-emitting reliability can be obtained. Moreover, the manufacturing efficiency of the optical semiconductor device can be sufficiently improved.

1‧‧‧LED裝置(雷射二極體裝置) 1‧‧‧LED device (laser diode device)

2‧‧‧螢光體片材 2‧‧‧Fuel sheet

3‧‧‧LED(雷射二極體) 3‧‧‧LED (Laser Diode)

4‧‧‧脫模片材 4‧‧‧Release sheets

5‧‧‧基板 5‧‧‧Substrate

6‧‧‧試製品 6‧‧‧Prototypes

7‧‧‧清漆 7‧‧‧ Varnish

13‧‧‧分配器 13‧‧‧Distributor

20‧‧‧壓製機 20‧‧‧ Press

21‧‧‧平板 21‧‧‧ tablet

51‧‧‧攪拌機 51‧‧‧Mixer

52‧‧‧容器 52‧‧‧ Container

54‧‧‧加熱器 54‧‧‧heater

55‧‧‧烘箱 55‧‧‧ oven

S1‧‧‧試製步驟 S1‧‧‧Prototype steps

S2‧‧‧決定步驟 S2‧‧‧Decision steps

S3‧‧‧製造步驟 S3‧‧‧Manufacturing steps

S4‧‧‧試製條件決定步驟 S4‧‧‧Prototype conditions determination steps

S5‧‧‧清漆製備步驟 S5‧‧‧ varnish preparation steps

S6‧‧‧B階段化步驟 S6‧‧‧B staged steps

S7‧‧‧C階段化步驟 S7‧‧‧C stage step

S8‧‧‧評價步驟 S8‧‧‧Evaluation steps

S9‧‧‧記錄步驟 S9‧‧‧ Recording steps

S11‧‧‧清漆製備步驟 S11‧‧‧ Varnish preparation steps

S12‧‧‧B階段化步驟 S12‧‧‧B staged steps

S13‧‧‧C階段化步驟 S13‧‧‧C stage step

圖1表示作為本發明之光半導體裝置之製造方法之一實施形態的LED裝置之製造方法之流程圖。 Fig. 1 is a flow chart showing a method of manufacturing an LED device as an embodiment of a method of manufacturing an optical semiconductor device according to the present invention.

圖2表示圖1所示之試製步驟之流程圖。 Figure 2 is a flow chart showing the trial production steps shown in Figure 1.

圖3表示圖1所示之製造步驟之流程圖。 Figure 3 is a flow chart showing the manufacturing steps shown in Figure 1.

圖4係說明圖2之試製步驟中之清漆製備步驟之圖式。 Figure 4 is a diagram showing the steps of preparing the varnish in the trial production step of Figure 2.

圖5係說明圖2之試製步驟中之B階段化步驟之清漆之塗佈的圖 式。 Figure 5 is a view showing the coating of the varnish of the B-stage step in the trial production step of Figure 2. formula.

圖6係說明圖2之試製步驟中之B階段化步驟之清漆之加熱的圖式。 Figure 6 is a diagram showing the heating of the varnish of the B-stage step in the trial production step of Figure 2.

圖7係說明圖2之試製步驟中之C階段化步驟,即藉由B階段之螢光體片材被覆LED前之狀態的圖式。 Fig. 7 is a view showing a C-stage step in the trial production step of Fig. 2, that is, a state before the LED sheet is coated with the B-stage phosphor sheet.

圖8係說明圖2之試製步驟中之C階段化步驟,即藉由B階段之螢光體片材被覆LED後之狀態的圖式。 Fig. 8 is a view for explaining a C-stage step in the trial production step of Fig. 2, that is, a state in which the LED is covered by the B-stage phosphor sheet.

圖9係圖2所示之試製步驟之變化例。 Fig. 9 is a modification of the trial production step shown in Fig. 2.

參照圖1~圖8,說明作為本發明之光半導體裝置之製造方法之一實施形態的LED裝置1之製造方法。 A method of manufacturing the LED device 1 as an embodiment of the method of manufacturing an optical semiconductor device according to the present invention will be described with reference to Figs. 1 to 8 .

LED裝置1之製造方法為參照圖8所示,製造作為藉由螢光體片材2被覆作為光半導體元件之LED3之光半導體裝置的LED裝置1之方法。 In the method of manufacturing the LED device 1, as shown in FIG. 8, a method of manufacturing the LED device 1 as an optical semiconductor device of the LED 3 as an optical semiconductor element by the phosphor sheet 2 is manufactured.

LED裝置1之製造方法如圖1所示,具備試製步驟S1,其試製試製品6並進行評價;決定步驟S2,其基於試製品6之評價,決定用以製造LED裝置1之製造條件;及製造步驟S3,其基於決定步驟所決定之製造條件,製造藉由B階段之螢光體片材2被覆LED3,並使該螢光體片材2進行C階段化之LED裝置1。 As shown in FIG. 1 , the manufacturing method of the LED device 1 includes a trial production step S1 in which the prototype 6 is experimentally produced and evaluated, and a determination step S2 in which the manufacturing conditions for manufacturing the LED device 1 are determined based on the evaluation of the prototype 6; In the manufacturing step S3, based on the manufacturing conditions determined by the determining step, the LED device 1 in which the LED 3 is covered by the B-stage phosphor sheet 2 and the phosphor sheet 2 is C-staged is manufactured.

[試製步驟S1] [Trial production step S1]

試製步驟S1利用與繼而說明之製造步驟S3相同之製造裝置(製造設備)。又,試製步驟S1係試製相較於製造步驟S3中量產之LED裝置1相對少量之試製品6。於試製步驟S1中試製之LED裝置1之個數例如為100個以下,較佳為10個以下,例如為1個以上。即,於試製步驟S1中,以小規模試製試製品6。再者,LED裝置1之個數與LED3之個數無關,對應1塊基板5,數作1個。 The trial production step S1 uses the same manufacturing apparatus (manufacturing equipment) as the manufacturing step S3 described later. Further, in the trial production step S1, a relatively small amount of the prototype 6 is produced in comparison with the LED device 1 mass-produced in the manufacturing step S3. The number of the LED devices 1 which are experimentally produced in the trial production step S1 is, for example, 100 or less, preferably 10 or less, for example, one or more. That is, in the trial production step S1, the prototype 6 was experimentally produced on a small scale. Further, the number of the LED devices 1 is different from the number of the LEDs 3, and corresponds to one substrate 5, and the number is one.

試製步驟S1如圖2所示,具備試製條件決定步驟S4、製備包含螢光體及硬化性樹脂之清漆之清漆製備步驟S5、由清漆形成B階段之螢光體片材2之B階段化步驟S6、使B階段之螢光體片材2進行C階段化之C階段化步驟S7、及評價C階段之螢光體片材2之評價步驟S8。 As shown in FIG. 2, the trial production step S1 includes a trial condition determination step S4, a varnish preparation step S5 for preparing a varnish containing a phosphor and a curable resin, and a B-stage step of forming a B-stage phosphor sheet 2 from a varnish. S6, a C-stage step S7 of performing the C-stage of the B-stage phosphor sheet 2, and an evaluation step S8 of evaluating the C-stage phosphor sheet 2.

於試製步驟S1中,清漆製備步驟S5、B階段化步驟S6及C階段化步驟S7係分別基於試製條件決定步驟S4所決定之試製條件而實施。 In the trial production step S1, the varnish preparation step S5, the B-stage step S6, and the C-stage step S7 are carried out based on the trial production conditions determined in the step S4 by the trial production conditions.

<試製條件決定步驟S4> <Prototype conditions determination step S4>

試製條件決定步驟S4為基於在本次以前試製試製品6之試製條件及評價之資訊,決定用以本次試製試製品6之試製條件之步驟。 The trial condition determination step S4 is a step of determining the trial production conditions for the trial production of the prototype 6 based on the trial conditions and evaluation information of the prototype 6 before the trial.

作為試製條件之資訊,例如可列舉關於清漆之資訊、關於基板5之資訊、關於螢光體片材2之資訊等。作為關於清漆之資訊,可列舉例如螢光體之調配比率、最大長度之平均值(於球狀之情形時,平均粒徑)、吸收峰波長,例如A階段之硬化性樹脂之種類、黏度、調配比率等。作為關於基板5之資訊,可列舉例如基板5之外形形狀、尺寸、表面形狀(凹部之有無),例如安裝於基板5上之LED3之形狀、尺寸、發光峰波長、基板5上之每單位面積之LED3之安裝數、每塊基板5上之LED3之安裝數等。作為關於螢光體片材2之資訊,可列舉例如清漆7之塗佈條件(具體而言,清漆7之形狀、厚度等)、B階段化中之清漆7之加熱條件、活性能量線之照射條件,例如C階段化中之螢光體片材2之加熱條件、活性能量線之照射條件、壓製條件、C階段之螢光體片材2之厚度等。 As information on the trial production conditions, for example, information on the varnish, information on the substrate 5, information on the phosphor sheet 2, and the like can be cited. As information about the varnish, for example, the blending ratio of the phosphor, the average value of the maximum length (the average particle diameter in the case of a spherical shape), and the absorption peak wavelength, for example, the type and viscosity of the curable resin in the A-stage, Ratio of blending, etc. The information on the substrate 5 may, for example, be a shape, a size, or a surface shape (the presence or absence of a concave portion) of the substrate 5, for example, the shape, size, luminescence peak wavelength, and per unit area of the LED 5 mounted on the substrate 5. The number of LEDs 3 to be mounted, the number of LEDs 3 mounted on each substrate 5, and the like. The information on the phosphor sheet 2 includes, for example, the coating conditions of the varnish 7 (specifically, the shape and thickness of the varnish 7), the heating conditions of the varnish 7 in the B-stage, and the irradiation of the active energy ray. The conditions are, for example, the heating conditions of the phosphor sheet 2 in the C-stage, the irradiation conditions of the active energy ray, the pressing conditions, the thickness of the C-stage phosphor sheet 2, and the like.

作為評價之資訊,例如可列舉試製品6之色溫、試製品6之總光通量等。 The information of the evaluation includes, for example, the color temperature of the prototype 6 and the total luminous flux of the prototype 6.

為了決定試製條件,基於過去之試製條件及評價之資訊,以成為本次試製之LED裝置1中之目標色溫及/或總光通量之方式,決定用以本次試製之試製條件。 In order to determine the trial production conditions, based on the past trial conditions and evaluation information, the trial production conditions for the trial production are determined in such a manner as to be the target color temperature and/or total luminous flux in the LED device 1 of the prototype.

再者,於本次以前進行試製之試製條件及評價之資訊記憶於管理該製造方法之步驟之電腦的記憶體等中。 Further, the information on the trial production conditions and evaluations which have been subjected to the trial production before this time is stored in the memory of the computer or the like which manages the steps of the manufacturing method.

<清漆製備步驟S5> <varnish preparation step S5>

於清漆製備步驟S5中,首先,分別準備螢光體及硬化性樹脂,將該等加以混合,製備清漆作為含螢光體之硬化性樹脂組合物。 In the varnish preparation step S5, first, a phosphor and a curable resin are separately prepared, and these are mixed to prepare a varnish as a phosphor-containing curable resin composition.

螢光體具有波長轉換功能,例如可列舉可將藍光轉換為黃光之黃色螢光體、可將藍光轉換為紅光之紅色螢光體等。 The phosphor has a wavelength conversion function, and examples thereof include a yellow phosphor that converts blue light into yellow light, a red phosphor that converts blue light into red light, and the like.

作為黃色螢光體,可列舉例如(Ba,Sr,Ca)2SiO4:Eu、(Sr,Ba)2SiO4:Eu(正矽酸鋇(BOS))等矽酸鹽螢光體,例如Y3Al5O12:Ce(YAG(釔-鋁-石榴石):Ce)、Tb3Al3O12:Ce(TAG(鋱-鋁-石榴石):Ce)等具有石榴石型結晶構造之石榴石型螢光體,例如Ca-α-SiAlON等氮氧化物螢光體等。 Examples of the yellow phosphor include a phthalate phosphor such as (Ba, Sr, Ca) 2 SiO 4 :Eu, (Sr,Ba) 2 SiO 4 :Eu (BOS); Y 3 Al 5 O 12 :Ce (YAG (yttrium-aluminum-garnet):Ce), Tb 3 Al 3 O 12 :Ce (TAG (鋱-aluminum-garnet):Ce) has a garnet-type crystal structure A garnet-type phosphor, for example, an oxynitride phosphor such as Ca-α-SiAlON.

作為紅色螢光體,例如可列舉CaAlSiN3:Eu、CaSiN2:Eu等氮化物螢光體等。 Examples of the red phosphor include a nitride phosphor such as CaAlSiN 3 :Eu or CaSiN 2 :Eu.

作為螢光體之形狀,例如可列舉球狀、板狀、針狀等。就流動性之觀點而言,較佳可列舉球狀。 Examples of the shape of the phosphor include a spherical shape, a plate shape, and a needle shape. From the viewpoint of fluidity, a spherical shape is preferred.

螢光體之最大長度之平均值(於球狀之情形時,平均粒徑)例如為0.1μm以上,較佳為1μm以上,又,例如為2μm以下,較佳為100μm以下。 The average value of the maximum length of the phosphor (the average particle diameter in the case of a spherical shape) is, for example, 0.1 μm or more, preferably 1 μm or more, and is, for example, 2 μm or less, preferably 100 μm or less.

螢光體之吸收峰波長例如為300nm以上,較佳為430nm以上,又,例如為550nm以下,較佳為470nm以下。 The absorption peak wavelength of the phosphor is, for example, 300 nm or more, preferably 430 nm or more, and is, for example, 550 nm or less, preferably 470 nm or less.

螢光體可單獨使用,或可併用。 The phosphors can be used alone or in combination.

螢光體之調配比率相對於硬化性樹脂100質量份,例如為0.1質量份以上,較佳為0.5質量份以上,例如為80質量份以下,較佳為50質量份以下。 The blending ratio of the phosphor is, for example, 0.1 part by mass or more, preferably 0.5 part by mass or more, for example, 80 parts by mass or less, and preferably 50 parts by mass or less, based on 100 parts by mass of the curable resin.

作為硬化性樹脂,例如可列舉具有2階段之反應機制,且利用第 1階段之反應進行B階段化(半硬化),利用第2階段之反應進行C階段化(完全硬化)之2階段硬化型樹脂。 Examples of the curable resin include a two-stage reaction mechanism, and the use of the first The first-stage reaction is carried out in a B-stage (semi-hardening), and a two-stage hardening type resin in which C-stage (completely hardening) is carried out by the second-stage reaction.

作為2階段硬化型樹脂,可列舉例如藉由加熱而硬化之2階段硬化型熱硬化性樹脂,例如藉由活性能量線(例如,紫外線、電子束等)之照射而硬化之2階段硬化型活性能量線硬化性樹脂等。較佳可列舉2階段硬化型熱硬化性樹脂。 The two-stage curing type resin is, for example, a two-stage curing type thermosetting resin which is cured by heating, for example, a two-stage curing type which is hardened by irradiation with an active energy ray (for example, ultraviolet rays, electron beams, etc.). Energy line curable resin or the like. Preferably, a two-stage hardening type thermosetting resin is mentioned.

具體而言,作為2階段硬化型熱硬化型樹脂,例如可列舉聚矽氧樹脂、環氧樹脂、聚醯亞胺樹脂、酚樹脂、尿素樹脂、三聚氰胺樹脂、不飽和聚酯樹脂等。就透光性及耐久性之觀點而言,較佳可列舉2階段硬化型聚矽氧樹脂。 Specifically, examples of the two-stage curing thermosetting resin include a polyoxymethylene resin, an epoxy resin, a polyimide resin, a phenol resin, a urea resin, a melamine resin, and an unsaturated polyester resin. From the viewpoint of light transmittance and durability, a two-stage curable polydecane resin is preferred.

作為2階段硬化型聚矽氧樹脂,例如可列舉具有縮合反應與加成反應此2種反應系之縮合反應/加成反應硬化型聚矽氧樹脂等。 Examples of the two-stage curable polydecane resin include a condensation reaction/addition reaction hardening type polyoxo resin having a condensation reaction and an addition reaction.

作為此種縮合反應/加成反應硬化型聚矽氧樹脂,可列舉:例如含有矽烷醇基兩封端之聚矽氧烷、含烯基之三烷氧基矽烷、有機氫聚矽氧烷、縮合觸媒及矽氫化觸媒之第1縮合反應/加成反應硬化型聚矽氧樹脂,例如含有矽烷醇基兩封端聚矽氧烷(參照下述式(1))、含乙烯系不飽和烴基之矽化物(參照下述式(2))、含乙烯系不飽和烴基之矽化物(參照下述式(3))、有機氫聚矽氧烷、縮合觸媒及矽氫化觸媒之第2縮合反應/加成反應硬化型聚矽氧樹脂,例如含有兩封端之矽烷醇型矽油、含烯基之二烷氧基烷基矽烷、有機氫聚矽氧烷、縮合觸媒及矽氫化觸媒之第3縮合反應/加成反應硬化型聚矽氧樹脂,例如含有於1分子中具有至少2個烯矽烷基之有機聚矽氧烷、於1分子中具有至少2個矽氫基之有機聚矽氧烷、矽氫化觸媒及硬化延遲劑之第4縮合反應/加成反應硬化型聚矽氧樹脂,例如含有於1分子中併有至少2個乙烯系不飽和烴基與至少2個矽氫基之第1有機聚矽氧烷、不含乙烯系不飽和烴基且於1分子中具有至少2個矽氫基之第2有機聚矽氧烷、矽氫化觸 媒及矽氫化抑制劑之第5縮合反應/加成反應硬化型聚矽氧樹脂,例如含有於1分子中併有至少2個乙烯系不飽和烴基與至少2個矽烷醇基之第1有機聚矽氧烷、不含乙烯系不飽和烴基且於1分子中具有至少2個矽氫基之第2有機聚矽氧烷、矽氫化抑制劑、及矽氫化觸媒之第6縮合反應/加成反應硬化型聚矽氧樹脂,例如含有矽化物、及硼化物或鋁化合物之第7縮合反應/加成反應硬化型聚矽氧樹脂,例如含有聚鋁矽氧烷及矽烷偶合劑之第8縮合反應/加成反應硬化型聚矽氧樹脂等。 Examples of such a condensation reaction/addition reaction-curable polysulfonated resin include, for example, a polyoxyalkylene group containing a decyl alcohol group, an alkenyl group-containing trialkoxysilane, an organic hydrogen polyoxyalkylene group, and the like. The first condensation reaction/addition reaction hardening type polyoxynoxy resin of the condensation catalyst and the rhodium hydrogenation catalyst, for example, a decyl alcohol-based two-end polyoxyalkylene (see the following formula (1)), and an ethylene-containing system a telluride of a saturated hydrocarbon group (refer to the following formula (2)), a telluride containing an ethylenically unsaturated hydrocarbon group (refer to the following formula (3)), an organohydrogenpolyoxyalkylene oxide, a condensation catalyst, and a rhodium hydrogenation catalyst. The second condensation reaction/addition reaction hardening type polyoxyxylene resin, for example, a two-blocked stanol type eucalyptus oil, an alkenyl group-containing dialkoxyalkyl decane, an organic hydrogen polyoxy siloxane, a condensation catalyst, and a hydrazine The third condensation reaction/addition reaction hardening type polyoxymethylene resin of the hydrogenation catalyst contains, for example, an organic polyoxane having at least two olefin alkyl groups in one molecule, and at least two hydrogen groups in one molecule. 4th condensation reaction/addition reaction hardening type polyoxygen tree of organic polyoxyalkylene, hydrazine hydrogenation catalyst and hardening retarder The lipid is, for example, a first organopolyoxyalkylene having at least two ethylenically unsaturated hydrocarbon groups and at least two anthracene hydrogen groups in one molecule, no ethylenically unsaturated hydrocarbon group, and at least two in one molecule. Hydrogen-based second organic polyoxane, hydrazine hydrogenation The fifth condensation reaction/addition reaction hardening type polyoxyxylene resin of the medium and the hydrazine hydrogenation inhibitor, for example, the first organic polymerization containing at least two ethylene-based unsaturated hydrocarbon groups and at least two stanol groups in one molecule a 6th condensation reaction/addition of a phthalic oxide, a second organopolyoxane having no at least two anthracene hydrogen groups in one molecule, a hydrazine hydrogenation inhibitor, and a hydrazine hydrogenation catalyst The reaction-curable polydecene oxide resin, for example, a seventh condensation reaction/addition reaction hardening type polyoxyxylene resin containing a telluride, and a boride or an aluminum compound, for example, an eighth condensation containing a polyaluminoxane and a decane coupling agent Reaction/addition reaction hardening type polyoxyxylene resin or the like.

作為縮合反應/加成反應硬化型聚矽氧樹脂,較佳可列舉第2縮合反應/加成反應硬化型聚矽氧樹脂,具體而言,詳細記載於日本專利特開2010-265436號公報等中,例如含有矽烷醇基兩封端之聚二甲基矽氧烷、乙烯基三甲氧基矽烷、(3-縮水甘油氧基丙基)三甲氧基矽烷、二甲基聚矽氧烷-共聚-甲基氫聚矽氧烷、氫氧化四甲基銨及鉑-羰基錯合物。具體而言,第2縮合反應/加成反應硬化型聚矽氧樹脂例如藉由首先,一次性加入作為縮合原料之含乙烯系不飽和烴基之矽化物及含乙烯系不飽和烴基之矽化物、及縮合觸媒,其次,加入作為加成原料之有機氫聚矽氧烷,其後,加入矽氫化觸媒(加成觸媒),而進行製備。 The condensation reaction/addition reaction-curable polydecane resin is preferably a second condensation reaction/addition reaction-curable polysulfonated resin, and is specifically described in Japanese Laid-Open Patent Publication No. 2010-265436, and the like. For example, polydimethyl methoxy oxane, vinyltrimethoxy decane, (3-glycidoxypropyl) trimethoxy decane, dimethyl polyoxy siloxane-copolymer copolymerized with a decyl alcohol group - methylhydrogenpolysiloxane, tetramethylammonium hydroxide and platinum-carbonyl complex. Specifically, the second condensation reaction/addition reaction hardening type polyfluorene oxide resin, for example, by first adding a telluride containing a vinyl unsaturated hydrocarbon group as a condensation raw material and a telluride containing an ethylenically unsaturated hydrocarbon group, Further, a condensation catalyst is added, followed by addition of an organohydrogenpolyoxyalkylene as an addition raw material, followed by addition of a ruthenium hydrogenation catalyst (addition catalyst).

藉此,製備A階段之2階段硬化型樹脂。 Thereby, the A-stage 2-stage hardening type resin was prepared.

A階段之2階段硬化型樹脂之黏度例如為3000mPa.s以上,較佳為5000mPa.s以上,又,例如為20000mPa.s以下,較佳為11000mPa.s以下。再者,A階段之2階段硬化型樹脂之黏度係將A階段之2階段硬化型樹脂溫度調節為25℃,使用E型圓錐,於旋轉數99s-1下進行測定。以下之黏度藉由與上述相同之方法進行測定。 The viscosity of the A stage 2-stage hardening resin is, for example, 3000 mPa. Above s, preferably 5000 mPa. Above s, again, for example, 20000 mPa. Below s, preferably 11000 mPa. s below. Further, the viscosity of the two-stage hardening type resin of the A stage was adjusted to 25 ° C in the second-stage hardening type resin of the A stage, and the measurement was carried out at a number of revolutions of 99 s -1 using an E-shaped cone. The following viscosity was measured by the same method as described above.

2階段硬化型樹脂之調配比率相對於含螢光體之硬化性樹脂組合物(清漆),例如為30質量%以上,較佳為40質量%以上,更佳為50質量%以上,又,例如為98質量%以下,較佳為95質量%以下,更佳為 90質量%以下。 The blending ratio of the second-stage curable resin is, for example, 30% by mass or more, preferably 40% by mass or more, more preferably 50% by mass or more, based on the curable resin composition (varnish) containing a phosphor, for example, 98% by mass or less, preferably 95% by mass or less, more preferably 90% by mass or less.

又,含螢光體之硬化性樹脂組合物中,根據需要,亦可含有填充劑及/或溶劑。 Further, the curable resin composition containing a phosphor may contain a filler and/or a solvent as needed.

作為填充劑,可列舉例如聚矽氧粒子(具體而言,包含聚矽氧橡膠粒子)等有機微粒子,例如二氧化矽(例如,煙熏二氧化矽等)、滑石、氧化鋁、氮化鋁、氮化矽等無機微粒子。又,填充劑之最大長度之平均值(於球狀之情形,平均粒徑)例如為0.1μm以上,較佳為1μm以上,又,例如為200μm以下,較佳為100μm以下。填充劑可單獨使用或併用。填充劑之調配比率相對於硬化性樹脂100質量份,例如為0.1質量份以上,較佳為0.5質量份以上,又,例如為70質量份以下,較佳為50質量份以下。 Examples of the filler include organic fine particles such as polyfluorene oxide particles (specifically, polyfluorene oxide rubber particles), such as cerium oxide (for example, smoked cerium oxide), talc, alumina, and aluminum nitride. Inorganic fine particles such as tantalum nitride. Further, the average value of the maximum length of the filler (in the case of a spherical shape, the average particle diameter) is, for example, 0.1 μm or more, preferably 1 μm or more, and further, for example, 200 μm or less, preferably 100 μm or less. The fillers may be used singly or in combination. The blending ratio of the filler is, for example, 0.1 part by mass or more, preferably 0.5 part by mass or more, and further, for example, 70 parts by mass or less, preferably 50 parts by mass or less, based on 100 parts by mass of the curable resin.

作為溶劑,可列舉例如己烷等脂肪族烴,例如二甲苯等芳香族烴,例如乙烯基甲基環狀矽氧烷、兩封端之乙烯基聚二甲基矽氧烷等矽氧烷等。溶劑以含螢光體之硬化性樹脂組合物成為下述黏度之調配比率,調配為含螢光體之硬化性樹脂組合物。 The solvent may, for example, be an aliphatic hydrocarbon such as hexane, for example, an aromatic hydrocarbon such as xylene, for example, a vinyl methyl cyclic siloxane or a fluorene gas such as a two-terminal vinyl polydimethyl siloxane. . The solvent is blended into a curable resin composition containing a phosphor in a curable resin composition containing a phosphor to have a viscosity ratio of the following.

為了製備含螢光體之硬化性樹脂組合物,將2階段硬化型樹脂、螢光體、根據需要調配之填充劑及/或填充劑加以調配並進行混合。 In order to prepare a curable resin composition containing a phosphor, a two-stage curable resin, a phosphor, a filler and/or a filler prepared as needed are prepared and mixed.

為了製備含螢光體之硬化性樹脂組合物,具體而言,如圖4所示,於具備攪拌機51之混合容器52內,基於決定步驟S2中所決定之關於清漆之資訊,具體而言,基於例如螢光體之調配比率、螢光體之吸收峰波長、最大長度之平均值(於球狀之情形時,平均粒徑),例如A階段之硬化性樹脂之種類、黏度、調配比率等,將上述各成分進行調配。繼而,使用攪拌機51將該等混合。 In order to prepare a curable resin composition containing a phosphor, specifically, as shown in FIG. 4, in the mixing container 52 provided with the agitator 51, based on the information regarding the varnish determined in the step S2, specifically, For example, based on the blending ratio of the phosphor, the absorption peak wavelength of the phosphor, and the average value of the maximum length (average particle diameter in the case of a spherical shape), for example, the type, viscosity, blending ratio, etc. of the curable resin in the A stage. , the above components are formulated. Then, the mixture is mixed using a stirrer 51.

藉此,製備清漆作為A階段之含螢光體之硬化性樹脂組合物。 Thereby, a varnish was prepared as the phosphor-containing curable resin composition of the A stage.

清漆之於25℃、1氣壓之條件下之黏度例如為1,000mPa.s以上,較佳為4,000mPa.s以上,又,例如為1,000,000mPa.s以下, 較佳為100,000mPa.s以下。 The viscosity of the varnish at 25 ° C, 1 atmosphere is, for example, 1,000 mPa. Above s, preferably 4,000 mPa. Above s, again, for example, 1,000,000 mPa. s below, Preferably it is 100,000 mPa. s below.

<B階段化步驟S6> <B-stage step S6>

於如圖2所示之B階段化步驟S6中,由清漆形成B階段之螢光體片材2。 In the B-stage step S6 shown in Fig. 2, the B-stage phosphor sheet 2 is formed of a varnish.

為了形成B階段之螢光體片材2,如圖5所示,例如,首先,將清漆塗佈於脫模片材4之表面。 In order to form the B-stage phosphor sheet 2, as shown in FIG. 5, for example, first, a varnish is applied to the surface of the release sheet 4.

作為脫模片材4,可列舉例如聚乙烯膜、聚酯膜(PET(Polyethylene Terephthalate,聚對苯二甲酸乙二酯)等)等聚合物膜,例如陶瓷片材,例如金屬箔等。較佳可列舉聚合物膜。又,亦可於脫模片材4之表面,實施氟處理等剝離處理。又,脫模片材4之形狀並無特別限定,例如,形成為俯視大致矩形狀(包含短條狀、長條狀)等。 The release sheet 4 may, for example, be a polymer film such as a polyethylene film or a polyester film (PET (polyethylene terephthalate)), for example, a ceramic sheet such as a metal foil. A polymer film is preferred. Further, a release treatment such as fluorine treatment may be performed on the surface of the release sheet 4. Moreover, the shape of the release sheet 4 is not particularly limited, and for example, it is formed in a substantially rectangular shape (including a short strip shape or a long strip shape) in plan view.

為了將清漆塗佈於脫模片材4之表面,例如,使用分配器、敷料器、狹縫式塗佈機等塗佈裝置。較佳為使用圖5所示之分配器13。 In order to apply the varnish to the surface of the release sheet 4, for example, a coating device such as a dispenser, an applicator, or a slit coater is used. Preferably, the dispenser 13 shown in Figure 5 is used.

又,以螢光體片材2之厚度例如成為10μm以上,較佳為成為50μm以上,又,例如成為2000μm以下,較佳為成為1000μm以下之方式,將清漆塗佈於脫模片材4上。 In addition, the thickness of the phosphor sheet 2 is, for example, 10 μm or more, preferably 50 μm or more, and is, for example, 2000 μm or less, preferably 1000 μm or less, and the varnish is applied onto the release sheet 4 . .

清漆7塗佈為於俯視下例如大致矩形狀(包含短條狀、長條狀),例如圓形狀等適當之形狀。構成上述形狀之清漆7亦可相互隔開間隔而形成。 The varnish 7 is applied in a substantially rectangular shape (including a short strip shape or a long strip shape) in a plan view, for example, a circular shape or the like. The varnish 7 constituting the above shape may be formed at a distance from each other.

又,可將清漆7塗佈於例如俯視大致矩形狀(長條狀除外)之脫模片材4上,藉由繼而說明之B階段化,製成單片式之螢光體片材2,或者亦可連續地塗佈於長條狀之脫模片材4上,藉由繼而說明之B階段化,製成連續式之螢光體片材2。再者,將螢光體片材2設為單片式之情形,即於相同之脫模片材4中,製造複數片螢光體片材2之情形時,將清漆7斷續地塗佈。 Further, the varnish 7 can be applied to, for example, a release sheet 4 having a substantially rectangular shape (excluding a long shape) in a plan view, and a B-stage of the single-piece phosphor sheet 2 can be produced by the step B described above. Alternatively, it may be continuously applied to the strip-shaped release sheet 4, and the B-stage described later may be used to form a continuous phosphor sheet 2. Further, in the case where the phosphor sheet 2 is a one-piece type, that is, in the case where a plurality of pieces of the phosphor sheet 2 are produced in the same release sheet 4, the varnish 7 is intermittently coated. .

其後,使所塗佈之清漆7進行B階段化(半硬化)。 Thereafter, the applied varnish 7 is subjected to B-stage (semi-hardening).

於清漆7含有2階段硬化型熱硬化性樹脂之情形時,例如,對塗佈之清漆7進行加熱。 When the varnish 7 contains a two-stage hardening type thermosetting resin, for example, the applied varnish 7 is heated.

為了加熱清漆7,例如,如圖6所示,使用具備對向配置於脫模片材4之上側及/或下側之加熱器54之烘箱55。 In order to heat the varnish 7, for example, as shown in Fig. 6, an oven 55 having a heater 54 disposed opposite to the upper side and/or the lower side of the release sheet 4 is used.

關於加熱條件,加熱溫度例如為40℃以上,較佳為80℃以上,更佳為100℃以上,又,例如為200℃以下,較佳為150℃以下,更佳為140℃以下。加熱時間例如為1分鐘以上,較佳為5分鐘以上,更佳為10分鐘以上,又,例如為24小時以下,較佳為1小時以下,更佳為0.5小時以下。 The heating temperature is, for example, 40 ° C or higher, preferably 80 ° C or higher, more preferably 100 ° C or higher, and is, for example, 200 ° C or lower, preferably 150 ° C or lower, more preferably 140 ° C or lower. The heating time is, for example, 1 minute or longer, preferably 5 minutes or longer, more preferably 10 minutes or longer, and for example, 24 hours or shorter, preferably 1 hour or shorter, more preferably 0.5 hours or shorter.

或者,於清漆7含有2階段硬化型活性能量線硬化性樹脂之情形時,對清漆7照射活性能量線。具體而言,使用紫外線燈等對清漆7照射紫外線。 Alternatively, when the varnish 7 contains a two-stage curable active energy ray-curable resin, the varnish 7 is irradiated with an active energy ray. Specifically, the varnish 7 is irradiated with ultraviolet rays using an ultraviolet lamp or the like.

藉此,清漆7一方面進行B階段化(半硬化),另一方面不進行C階段化(完全硬化),即,形成C階段化(完全硬化)前之螢光體片材2,即,B階段之螢光體片材2。 Thereby, the varnish 7 is subjected to B-stage (semi-hardening) on the one hand, and not C-staged (completely hardened) on the other hand, that is, the phosphor sheet 2 before the C-stage (completely hardened) is formed, that is, B-stage phosphor sheet 2.

藉此,如圖6所示,製造積層於脫模片材4之表面之B階段之螢光體片材2。 Thereby, as shown in FIG. 6, the B-stage phosphor sheet 2 laminated on the surface of the release sheet 4 is manufactured.

具體而言,基於決定步驟S2中所決定之清漆7之塗佈條件(具體而言,清漆7之形狀、厚度等)、B階段化中之清漆7之加熱條件、活性能量線之照射條件,由清漆7形成B階段之螢光體片材2。 Specifically, based on the coating conditions (specifically, the shape and thickness of the varnish 7) determined in the step S2, the heating conditions of the varnish 7 in the B-stage, and the irradiation conditions of the active energy ray, The B-stage phosphor sheet 2 is formed from the varnish 7.

該片材製造步驟S3中所製造之螢光體片材2之於25℃時之壓縮彈性模數例如為0.040MPa以上,較佳為0.050MPa以上,更佳為0.075MPa以上,進而較佳為0.100MPa以上,又,例如為0.145MPa以下,較佳為0.140MPa以下,更佳為0.135MPa以下,進而較佳為0.125MPa以下。 The compressive elastic modulus of the phosphor sheet 2 produced in the sheet production step S3 at 25 ° C is, for example, 0.040 MPa or more, preferably 0.050 MPa or more, more preferably 0.075 MPa or more, and still more preferably Further, it is 0.100 MPa or more, and is, for example, 0.145 MPa or less, preferably 0.140 MPa or less, more preferably 0.135 MPa or less, still more preferably 0.125 MPa or less.

若壓縮彈性模數超出上述上限,則於C階段化步驟S7中,在藉由螢光體片材2被覆LED3之時,LED3打線結合連接於基板5之情形時,有線(未圖示)發生變形之情形。 When the compression elastic modulus exceeds the above upper limit, in the C-staged step S7, when the LED 3 is covered by the phosphor sheet 2, when the LED 3 is bonded and connected to the substrate 5, a wire (not shown) occurs. The situation of deformation.

另一方面,若壓縮彈性模數未達上述下限,則變得難以確保螢光體片材2之形狀。即,有清漆7不形成螢光體片材2之形狀之情形。 On the other hand, if the compression elastic modulus is less than the above lower limit, it becomes difficult to secure the shape of the phosphor sheet 2. That is, there is a case where the varnish 7 does not form the shape of the phosphor sheet 2.

其後,亦可根據需要,將連續式之B階段之螢光體片材2與連續之脫模片材4一起,切斷為特定形狀,製成單片式之螢光體片材2。 Thereafter, the continuous B-stage phosphor sheet 2 may be cut into a specific shape together with the continuous release sheet 4 as needed to form a one-piece phosphor sheet 2.

<C階段化步驟S7> <C-stage step S7>

於圖2所示之C階段化步驟S7中,如圖7及圖8所示,首先,藉由B階段之螢光體片材2被覆LED3,其次,使B階段之螢光體片材2進行C階段化。 In the C-stage step S7 shown in FIG. 2, as shown in FIGS. 7 and 8, first, the LED 3 is covered by the B-stage phosphor sheet 2, and secondly, the B-stage phosphor sheet 2 is made. Perform C-stage.

為藉由B階段之螢光體片材2被覆LED3,如圖7所示,首先,準備安裝有LED3之基板5。 In order to cover the LED 3 by the B-stage phosphor sheet 2, as shown in Fig. 7, first, the substrate 5 on which the LED 3 is mounted is prepared.

基板5例如包含矽基板、陶瓷基板、聚醯亞胺樹脂基板、於金屬基板上積層有絕緣層之積層基板等絕緣基板。 The substrate 5 includes, for example, a tantalum substrate, a ceramic substrate, a polyimide substrate, and an insulating substrate such as a laminated substrate in which an insulating layer is laminated on the metal substrate.

又,於基板5之表面,形成有具備用以與繼而說明之LED3之端子(未圖示)電性連接之電極(未圖示)、及與其連接之配線之導體圖案(未圖示)。導體圖案例如由金、銅、銀、鎳等導體形成。 Further, on the surface of the substrate 5, a conductor pattern (not shown) including an electrode (not shown) electrically connected to a terminal (not shown) of the LED 3 to be described later, and a wiring connected thereto is formed. The conductor pattern is formed of, for example, a conductor such as gold, copper, silver, or nickel.

又,基板5之表面形成為平坦狀。或者,雖未圖示,亦可於基板5之安裝有LED3之表面上,形成朝下方凹下之凹部。 Further, the surface of the substrate 5 is formed in a flat shape. Alternatively, although not shown, a concave portion recessed downward may be formed on the surface of the substrate 5 on which the LED 3 is mounted.

基板5之外形形狀並無特別限定,例如,可列舉俯視大致矩形狀、俯視大致圓形狀等。適當選擇基板5之尺寸,例如最大長度例如為2mm以上,較佳為10mm以上,又,例如為300mm以下,較佳為100mm以下。 The shape of the outer shape of the substrate 5 is not particularly limited, and examples thereof include a substantially rectangular shape in plan view and a substantially circular shape in plan view. The size of the substrate 5 is appropriately selected. For example, the maximum length is, for example, 2 mm or more, preferably 10 mm or more, and for example, 300 mm or less, preferably 100 mm or less.

LED3係將電能轉換為光能之光半導體元件,例如,形成為厚度較面方向長度(對於厚度方向之正交方向長度)更短之剖面觀察大致矩 形狀。 The LED 3 is an optical semiconductor element that converts electric energy into light energy, for example, a thickness of a section having a thickness in a face-to-face direction (length in the direction orthogonal to the thickness direction) is shorter. shape.

作為LED3,例如可列舉發藍光之藍色LED(發光二極體元件)。LED3之尺寸根據用途及目的而適當設定,具體而言,厚度例如為10~1000μm,最大長度例如為0.05mm以上,較佳為0.1mm以上,又,例如為5mm以下,較佳為2mm以下。 As the LED 3, for example, a blue LED (light emitting diode element) that emits blue light can be cited. The size of the LED 3 is appropriately set depending on the use and purpose, and specifically, the thickness is, for example, 10 to 1000 μm, and the maximum length is, for example, 0.05 mm or more, preferably 0.1 mm or more, and further, for example, 5 mm or less, preferably 2 mm or less.

LED3之發光峰波長例如為400nm以上,較佳為430nm以上,又,例如為500nm以下,較佳為470nm以下。 The emission peak wavelength of the LED 3 is, for example, 400 nm or more, preferably 430 nm or more, and is, for example, 500 nm or less, preferably 470 nm or less.

LED3對於基板5,例如,進行倒裝晶片安裝,或者進行打線結合連接。 The LED 3 is flip-chip mounted to the substrate 5, for example, or is bonded by wire bonding.

又,可對於1塊基板5,如圖5所示,安裝複數個(圖7中為3個)LED3。每塊基板5之LED3之安裝數例如為1個以上,較佳為4個以上,又,例如為2000個以下,較佳為400個以下。 Further, as shown in FIG. 5, a plurality of (three in FIG. 7) LEDs 3 can be mounted on one substrate 5. The number of LEDs 3 to be mounted on each of the substrates 5 is, for example, one or more, preferably four or more, and for example, 2,000 or less, preferably 400 or less.

並且,安裝有LED3之基板5係基於決定步驟S2中所決定之關於上述基板5之資訊,例如,基板5之外形形狀、尺寸、表面形狀(凹部之有無),例如,安裝於基板5上之LED3之形狀、尺寸、LED3之發光峰波長、基板5之每單位面積之LED3之安裝數、每塊基板5之LED3之安裝數等,進行選擇並準備。 Further, the substrate 5 on which the LEDs 3 are mounted is based on the information on the substrate 5 determined in the step S2, for example, the shape, size, and surface shape of the substrate 5 (the presence or absence of the recess), for example, mounted on the substrate 5. The shape and size of the LED 3, the illuminating peak wavelength of the LED 3, the number of LEDs 3 per unit area of the substrate 5, the number of LEDs 3 mounted per substrate 5, and the like are selected and prepared.

其次,於該方法中,將安裝有LED3之基板5設置於圖7所示之壓製機20中。 Next, in this method, the substrate 5 on which the LEDs 3 are mounted is placed in the press machine 20 shown in FIG.

作為壓製機20,例如,採用具備於上下方向上隔開間隔而對向配置之2片平板21之平板壓製機等。 As the press machine 20, for example, a flat press having two flat plates 21 arranged to face each other at an interval in the vertical direction is used.

將安裝有LED3之基板5設置於如圖7所示之壓製機20時,具體而言,係將安裝有LED3之基板5設置於下側之平板21上。 When the substrate 5 on which the LEDs 3 are mounted is placed on the press machine 20 as shown in FIG. 7, specifically, the substrate 5 on which the LEDs 3 are mounted is placed on the lower plate 21 of the lower side.

繼而,將積層於脫模片材4之上表面之螢光體片材2(參照圖6)上下反轉,對向配置於LED3之上側。即,以使螢光體片材2朝向LED3之方式,進行配置。 Then, the phosphor sheet 2 (see FIG. 6) laminated on the upper surface of the release sheet 4 is vertically inverted and placed on the upper side of the LED 3 in the opposing direction. That is, the phosphor sheet 2 is placed so as to face the LEDs 3.

其次,如圖8所示,藉由螢光體片材2被覆LED3。具體而言,藉由螢光體片材2埋設LED3。 Next, as shown in FIG. 8, the LED 3 is covered by the phosphor sheet 2. Specifically, the LED 3 is buried by the phosphor sheet 2.

又,基於決定步驟S2中所決定之壓製條件,藉由螢光體片材2被覆LED3。 Further, the LED 3 is covered by the phosphor sheet 2 based on the pressing conditions determined in the step S2.

具體而言,如圖7之箭頭所示,使螢光體片材2下降(下壓)。詳細而言,對於安裝有LED3之基板5壓製螢光體片材2。 Specifically, as shown by the arrow in Fig. 7, the phosphor sheet 2 is lowered (pressed down). In detail, the phosphor sheet 2 is pressed against the substrate 5 on which the LED 3 is mounted.

壓製壓力例如為0.05MPa以上,較佳為0.1MPa以上,又,例如為1MPa以下,較佳為0.5MPa以下。 The pressing pressure is, for example, 0.05 MPa or more, preferably 0.1 MPa or more, and is, for example, 1 MPa or less, preferably 0.5 MPa or less.

藉此,藉由螢光體片材2被覆LED3。即,LED3埋設於螢光體片材2內。 Thereby, the LED 3 is covered by the phosphor sheet 2. That is, the LED 3 is embedded in the phosphor sheet 2.

藉此,藉由螢光體片材2密封LED3。 Thereby, the LED 3 is sealed by the phosphor sheet 2.

其後,使螢光體片材2進行C階段化。 Thereafter, the phosphor sheet 2 is C-staged.

例如,基於決定步驟S2中所決定之C階段化中之螢光體片材2之加熱條件、活性能量線之照射條件,使螢光體片材2進行C階段化。 For example, the phosphor sheet 2 is C-staged based on the heating conditions of the phosphor sheet 2 and the irradiation conditions of the active energy ray in the C-stage determination determined in the step S2.

具體而言,於2階段硬化型樹脂為2階段硬化型熱硬化性樹脂之情形時,對螢光體片材2進行加熱。具體而言,一面維持利用平板21之對螢光體片材2之壓製狀態,一面投入烘箱內。藉此,加熱螢光體片材2。 Specifically, when the two-stage curable resin is a two-stage curable thermosetting resin, the phosphor sheet 2 is heated. Specifically, while the pressed state of the phosphor sheet 2 by the flat plate 21 is maintained, it is placed in the oven. Thereby, the phosphor sheet 2 is heated.

加熱溫度例如為80℃以上,較佳為100℃以上,又,例如為200℃以下,較佳為180℃以下。又,加熱時間例如為10分鐘以上,較佳為30分鐘以上,又,例如為10小時以下,較佳為5小時以下。 The heating temperature is, for example, 80 ° C or higher, preferably 100 ° C or higher, and is, for example, 200 ° C or lower, preferably 180 ° C or lower. Further, the heating time is, for example, 10 minutes or longer, preferably 30 minutes or longer, and for example, 10 hours or shorter, preferably 5 hours or shorter.

藉由螢光體片材2之加熱,使螢光體片材2進行C階段化(完全硬化)。 The phosphor sheet 2 is C-staged (completely hardened) by heating of the phosphor sheet 2.

再者,於2階段硬化型樹脂為2階段硬化型活性能量線硬化性樹脂之情形時,藉由對螢光體片材2照射活性能量線,使螢光體片材2進行C階段化(完全硬化)。具體而言,使用紫外線燈等對螢光體片材2照 射紫外線。 In the case where the two-stage curable resin is a two-stage curable active energy ray-curable resin, the phosphor sheet 2 is C-staged by irradiating the phosphor sheet 2 with an active energy ray ( Completely hardened). Specifically, the phosphor sheet 2 is irradiated with an ultraviolet lamp or the like. Shoot ultraviolet light.

藉此,試製具備螢光體片材2、藉由螢光體片材2密封之LED3、及安裝有LED3之基板5之試製品6。 Thereby, a prototype 6 including the phosphor sheet 2, the LED 3 sealed by the phosphor sheet 2, and the substrate 5 on which the LED 3 is mounted is experimentally produced.

於圖8中,於1個試製品6中,設有複數個(3個)LED3。 In FIG. 8, a plurality of (three) LEDs 3 are provided in one prototype 6.

其後,將脫模片材4如圖8之假想線所示般,自螢光體片材2剝離。 Thereafter, the release sheet 4 is peeled off from the phosphor sheet 2 as shown by the imaginary line of FIG.

再者,其後,根據需要,於複數個LED3安裝於1塊基板5上之情形時,亦可對應於各LED3,將螢光體片材2切斷並單片化。 Further, when a plurality of LEDs 3 are mounted on one substrate 5 as needed, the phosphor sheet 2 may be cut and singulated in accordance with each of the LEDs 3.

<評價步驟S8> <Evaluation step S8>

於評價步驟S8中,為了評價C階段之螢光體片材2,例如,實施對試製品6(具體而言,藉由螢光體片材2被覆LED3之試製品6)之基板5之導體圖案(未圖示)流過電流,使LED3發光之點燈試驗。 In the evaluation step S8, in order to evaluate the phosphor sheet 2 of the C stage, for example, a conductor of the substrate 5 of the prototype 6 (specifically, the prototype 6 of the LED 3 coated with the phosphor sheet 2) is applied. A pattern (not shown) flows a current to cause the LED 3 to illuminate the lighting test.

具體而言,於點燈試驗中,對試製品6之基板5流過電流,測定剛流過電流後之光之色溫及/或總光通量。 Specifically, in the lighting test, a current flows through the substrate 5 of the prototype 6, and the color temperature and/or the total luminous flux of the light immediately after the current flows are measured.

具體而言,將試製品6供於點燈試驗時,光之色溫之測定值作為試製品6之評價,於圖2所示之記錄步驟S9中被記錄。 Specifically, when the prototype 6 is subjected to the lighting test, the measured value of the color temperature of light is recorded as the evaluation of the prototype 6, and is recorded in the recording step S9 shown in FIG.

具體而言,於記錄步驟S9中,記錄試製品6之試製條件及評價,作為過去(以前)之試製品6之資訊而保管。 Specifically, in the recording step S9, the trial production conditions and evaluation of the prototype 6 are recorded and stored as information of the past (previous) prototype 6 .

[決定步驟S2] [Decision Step S2]

決定步驟S2為於試製步驟S1之後實施之步驟。於決定步驟S2中,基於試製品6之評價,決定用以製造LED裝置1之製造條件。 The decision step S2 is the step performed after the trial production step S1. In the decision step S2, based on the evaluation of the prototype 6, the manufacturing conditions for manufacturing the LED device 1 are determined.

例如,基於試製步驟S1中所記錄之試製條件及評價,決定製造條件。 For example, the manufacturing conditions are determined based on the trial conditions and evaluations recorded in the trial production step S1.

具體而言,若試製品6之光之色溫之測定值在目標範圍內,則於記錄步驟S9中所記錄之試製條件直接成為製造條件。 Specifically, if the measured value of the color temperature of the light of the prototype 6 is within the target range, the trial conditions recorded in the recording step S9 directly become the manufacturing conditions.

於目標光之顏色為晝白色之情形時,目標色溫例如為4600 K以 上,又,例如為5500 K以下。又,於目標光之顏色為溫白色之情形時,目標色溫例如為3250 K以上,又,例如為3800 K以下。 When the color of the target light is 昼 white, the target color temperature is, for example, 4600 K. Above, again, for example, 5500 K or less. Further, when the color of the target light is warm white, the target color temperature is, for example, 3250 K or more, and is, for example, 3800 K or less.

另一方面,若試製品6之光之色溫之測定值在目標範圍外,則根據於記錄步驟S9中所記錄之試製條件及評價,以成為目標色溫之方式決定製造條件。具體而言,以成為目標色溫之方式,修正試製條件,從而設為製造條件。例如,如上所述,修正關於清漆之資訊、關於基板5之資訊、關於螢光體片材2之資訊,較佳為修正關於清漆之資訊,更佳為修正螢光體之調配比率、螢光體之形狀、螢光體之最大長度之平均值、螢光體之吸收峰波長等,從而設為製造條件。 On the other hand, if the measured value of the color temperature of the light of the prototype 6 is outside the target range, the manufacturing conditions are determined so as to be the target color temperature based on the trial conditions and evaluations recorded in the recording step S9. Specifically, the trial production conditions are corrected so as to be the target color temperature, and the manufacturing conditions are set. For example, as described above, the information on the varnish, the information on the substrate 5, and the information on the phosphor sheet 2 are corrected, and it is preferable to correct the information on the varnish, and it is more preferable to correct the blending ratio of the phosphor and the fluorescence. The shape of the body, the average value of the maximum length of the phosphor, the wavelength of the absorption peak of the phosphor, and the like are set as manufacturing conditions.

[製造步驟S3] [manufacturing step S3]

參照圖1,製造步驟S3為於決定步驟S2之後實施之步驟。製造步驟S3為基於決定步驟S2所決定之製造條件,製造LED裝置1之步驟。 Referring to Fig. 1, the manufacturing step S3 is a step performed after the decision step S2. The manufacturing step S3 is a step of manufacturing the LED device 1 based on the manufacturing conditions determined in the decision step S2.

製造步驟S3如圖3所示,具備清漆製備步驟S11、B階段化步驟S12及C階段化步驟S13。 As shown in FIG. 3, the manufacturing step S3 includes a varnish preparation step S11, a B-stage step S12, and a C-stage step S13.

於製造步驟S3(圖1)中,除使清漆製備步驟S11、B階段化步驟S12及C階段化步驟S13分別基於決定步驟S2所決定之製造條件以外,以分別與試製步驟S1中之清漆製備步驟S5、B階段化步驟S6及C階段化步驟S7(圖2)相同之方式實施。 In the manufacturing step S3 (FIG. 1), in addition to the varnish preparation step S11, the B-stage step S12, and the C-stage step S13, respectively, based on the manufacturing conditions determined in the decision step S2, respectively, the varnish preparation in the trial production step S1 is performed. Step S5, the B-stage step S6 and the C-stage step S7 (Fig. 2) are carried out in the same manner.

藉此,製造構造與試製品6相同之LED裝置1。 Thereby, the LED device 1 having the same structure as the prototype 6 is manufactured.

製造步驟S3中量產之LED裝置1之個數例如為100個以上,較佳為500個以上,更佳為1000個以上,又,例如為100000個以下。 The number of the LED devices 1 mass-produced in the manufacturing step S3 is, for example, 100 or more, preferably 500 or more, more preferably 1,000 or more, and for example, 100,000 or less.

並且,根據該方法,決定步驟S2係基於包含C階段之螢光體片材2之試製品6之評價,決定製造條件。並且,製造步驟S3係基於決定步驟所決定之製造條件,製造LED裝置1。 According to this method, the determination step S2 determines the manufacturing conditions based on the evaluation of the prototype 6 including the phosphor sheet 2 of the C stage. Further, in the manufacturing step S3, the LED device 1 is manufactured based on the manufacturing conditions determined by the determining step.

若如此,則成為評價對象之試製品6之螢光體片材2為C階段。因此,於製造條件中,考慮到螢光體片材2中,因上述C階段化所引起 之光學特性之變動。具體而言,於製造條件中,藉由階段化,會預先導入因伴隨硬化收縮之翹曲等變形所引起之螢光體片材2之光學特性之變動。 In this case, the phosphor sheet 2 of the prototype 6 to be evaluated is in the C stage. Therefore, in the manufacturing conditions, it is considered that the phosphor sheet 2 is caused by the above-described C-stage formation. Changes in optical characteristics. Specifically, in the production conditions, the phase characteristics are introduced into the fluctuation of the optical characteristics of the phosphor sheet 2 due to deformation such as warpage due to hardening shrinkage.

其結果,於製造步驟S3中,可製造發光可靠性優異之LED裝置1。 As a result, in the manufacturing step S3, the LED device 1 excellent in light emission reliability can be manufactured.

而且,基於根據試製品6之評價而決定之製造條件,而製造LED裝置1,故而可以優異精度量產(即,大量生產)LED裝置1。因此,可充分提高LED裝置1之製造效率。 Moreover, since the LED device 1 is manufactured based on the manufacturing conditions determined based on the evaluation of the prototype 6, the LED device 1 can be mass-produced (that is, mass-produced) with excellent precision. Therefore, the manufacturing efficiency of the LED device 1 can be sufficiently improved.

再者,試製步驟S1及決定步驟S2於用以量產不同類型之LED裝置1之製造步驟S3之前實施。進而,試製步驟S1及決定步驟S2係於螢光體及/或LED3被批量變更之情形時,於每次該等變更時,具體而言,於螢光體之最大長度之平均值、吸收峰波長、或LED3之發光峰波長每次變更時實施。 Furthermore, the trial production step S1 and the determination step S2 are performed before the manufacturing step S3 for mass production of different types of LED devices 1. Further, in the case where the phosphor and/or the LED 3 are changed in batches, the trial production step S1 and the determination step S2 are, in particular, the average value of the maximum length of the phosphor and the absorption peak. The wavelength or the luminescence peak wavelength of the LED 3 is changed every time.

(變化例) (variation)

於圖8所示之實施形態中,於C階段化步驟S7中,首先,藉由B階段之螢光體片材被覆LED3,其次,使B階段之螢光體片材2進行C階段化。然而,例如,參照圖6,亦可使積層於脫模片材4之B階段之螢光體片材2直接進行C階段化。 In the embodiment shown in FIG. 8, in the C-stage step S7, first, the LED 3 is coated with the B-stage phosphor sheet, and then the B-stage phosphor sheet 2 is C-staged. However, for example, referring to Fig. 6, the phosphor sheet 2 laminated in the B-stage of the release sheet 4 may be directly C-staged.

於該情形時,於評價步驟S8中,測定C階段之螢光體片材2之伴隨硬化收縮之翹曲量。翹曲量係以螢光體片材2中之中央部向下側凹下之凹下量與周端部向上側突出之突出量之差而獲得。 In this case, in the evaluation step S8, the amount of warpage accompanying the hardening shrinkage of the phosphor sheet 2 of the C stage is measured. The amount of warpage is obtained by the difference between the amount of depression of the central portion of the phosphor sheet 2 and the amount of protrusion of the peripheral end portion to the upper side.

較佳為如圖8所示之實施形態般,於C階段化步驟S7中,首先,藉由B階段之螢光體片材2被覆LED3,其次,使B階段之螢光體片材2進行C階段化。 Preferably, in the C-stage step S7, first, the LED 3 is coated by the B-stage phosphor sheet 2, and then the B-stage phosphor sheet 2 is subjected to the second step. C-stage.

根據此種方法,可將藉由螢光體片材2被覆LED3之試製品6與作為實際之製品之LED裝置1設為相同之構成。 According to this method, the prototype 6 in which the LED 3 is covered by the phosphor sheet 2 can be configured in the same manner as the LED device 1 as the actual product.

因此,可基於構成與實際之製品(LED裝置1)相同之試製品6之評價,決定實際之製品(LED裝置1)之製造條件。 Therefore, the manufacturing conditions of the actual product (LED device 1) can be determined based on the evaluation of the prototype 6 which is the same as the actual product (LED device 1).

其結果,可更進一步高精度地決定製造條件,可製造發光可靠性更進一步優異之LED裝置1。 As a result, the manufacturing conditions can be determined with higher precision, and the LED device 1 having further excellent light-emitting reliability can be manufactured.

又,於圖2之實施形態中,試製條件決定步驟S4係基於過去之試製條件及評價之資訊,決定試製條件,但亦可例如,如圖9所示,不基於過去之試製條件及評價之資訊,而基於記錄步驟S9中所記錄之試製條件及評價,於圖1所示之決定步驟S2中,預測製造條件而進行決定。 Further, in the embodiment of Fig. 2, the trial condition determination step S4 determines the trial production condition based on the past trial production conditions and the evaluation information, but may be, for example, as shown in Fig. 9, not based on the past trial conditions and evaluation. Based on the information, the trial conditions and evaluations recorded in the recording step S9 are determined in the decision step S2 shown in FIG. 1 by predicting the manufacturing conditions.

較佳為於試製條件決定步驟S4中,基於過去之試製條件及評價之資訊,決定試製條件。 Preferably, in the trial condition determination step S4, the trial production conditions are determined based on past trial conditions and evaluation information.

根據此種方法,可累積本次以前進行試製之試製條件,可基於累積之試製條件及評價,提高製造條件之精度。因此,可獲得發光可靠性優異之LED裝置1。 According to this method, the trial production conditions of the previous trial production can be accumulated, and the accuracy of the manufacturing conditions can be improved based on the accumulated trial production conditions and evaluation. Therefore, the LED device 1 excellent in light emission reliability can be obtained.

又,於圖7及圖8之實施形態中,C階段化步驟S7(參照圖2)中,首先,藉由B階段之螢光體片材2被覆LED3,其次,使B階段之螢光體片材2進行C階段化,例如,亦可同時實施B階段之螢光體片材2之對LED3之被覆與C階段化。 Further, in the embodiment of FIGS. 7 and 8, in the C-stage step S7 (see FIG. 2), first, the LED 3 is covered by the phosphor sheet 2 of the B-stage, and secondly, the phosphor of the B-stage is made. The sheet 2 is C-staged, and for example, the coating and C-stage of the LED 3 of the B-stage phosphor sheet 2 can be simultaneously performed.

又,於圖8中,於1個LED裝置1上設有複數個LED3,雖未圖示,例如,亦可設有單數個LED3。 Further, in FIG. 8, a plurality of LEDs 3 are provided in one LED device 1. Although not shown, for example, a single LED 3 may be provided.

又,於圖8之實施形態中,作為本發明之光半導體元件及光半導體裝置,分別將LED3及LED裝置1作為一例進行說明,例如,亦可分別設為LD(雷射二極體)3及雷射二極體裝置1。 Further, in the embodiment of FIG. 8, the LED 3 and the LED device 1 are described as an example of the optical semiconductor device and the optical semiconductor device of the present invention, and for example, LD (Laser Diode) 3 may be used. And a laser diode device 1.

[實施例] [Examples]

以下所示之實施例及比較例中之數值可由上述實施形態中所記載之對應數值(即,上限值或下限值)代替。 The numerical values in the examples and comparative examples shown below may be replaced by the corresponding numerical values (i.e., the upper limit value or the lower limit value) described in the above embodiments.

實施例1 Example 1 [試製步驟S1] [Trial production step S1] <清漆製備步驟S5> <varnish preparation step S5>

首先,對於加溫至40℃之矽烷醇基兩封端之聚二甲基矽氧烷[以下述式(1)中之R1全部為甲基,n=155所表示之化合物,平均分子量11,500]2031g(0.177mol),將乙烯基三甲氧基矽烷[以下述式(2)中之R2為乙烯基,X1全部為甲氧基所表示之化合物]15.76g(0.106mol)作為含乙烯系不飽和烴基之矽化物,及(3-縮水甘油氧基丙基)三甲氧基矽烷[以下述式(3)中之R3為3-縮水甘油氧基丙基,X2全部為甲氧基所表示之化合物]2.80g(0.0118mol)作為含乙烯系不飽和烴基之矽化物[矽烷醇基兩封端之聚二甲基矽氧烷之SiOH基之莫耳數與含乙烯系不飽和烴基之矽化物之SiX1基及含乙烯系不飽和烴基之矽化物之SiX2基之總莫耳數的比[SiOH/(SiX1+SiX2)=1/1],加以攪拌並進行混合後,加入氫氧化四甲基銨甲醇溶液(濃度10質量%)0.97mL(觸媒量:0.88mol,相對於矽烷醇基兩封端之聚二甲基矽氧烷100莫耳為0.50莫耳,相對於縮合原料100g為4.0mg)作為縮合觸媒,於40℃下攪拌1小時。將所獲得之油一面於40℃下攪拌1小時,一面進行減壓(10mmHg),除去揮發成分。其次,使反應液恢復至常壓後,以烯基相對於矽氫基之莫耳比成為SiR2/SiH=1/3.0之方式加入有機氫聚矽氧烷(二甲基聚矽氧烷-共聚-甲基氫聚矽氧烷),於40℃下攪拌1小時。其後,加入鉑-羰基錯合物(鉑濃度2.0質量%)0.038mL(鉑含量相對於有機聚矽氧烷為0.375ppm,即,相對於縮合原料100g為0.375×10-4g)作為矽氫化觸媒,於40℃下攪拌10分鐘,從而製備A階段之聚矽氧樹脂組合物(第2縮合反應/加成反應硬化型聚矽氧樹脂)。A階段之聚矽氧樹脂組合物之於25℃、1氣壓之條件下之黏度為8000mPa.s。 First, for the decyl alcohol-terminated polydimethyloxane heated to 40 ° C [the compound of the following formula (1) wherein R 1 is all methyl, n = 155, the average molecular weight is 11,500. 2,031 g (0.177 mol) of vinyltrimethoxydecane [a compound represented by the following formula (2) wherein R 2 is a vinyl group and X 1 is a methoxy group] 15.76 g (0.106 mol) as ethylene-containing a halide of an unsaturated hydrocarbon group, and (3-glycidoxypropyl)trimethoxydecane [wherein R 3 in the following formula (3) is 3 -glycidoxypropyl group, and X 2 is all methoxy a compound represented by a group] 2.80 g (0.0118 mol) as a telluride containing an ethylenically unsaturated hydrocarbon group [the molar number of the SiOH group of the sulfoalkyl group-terminated polydimethyloxane and the ethylenic unsaturation the molar ratio of the total number of hydrocarbon groups silicide SiX 1 SiX-containing vinyl group and unsaturated hydrocarbon group of 2 of the silicide [SiOH / (SiX 1 + SiX 2) = 1/1], and mixed with stirring Thereafter, a solution of tetramethylammonium hydroxide in methanol (concentration: 10% by mass) of 0.97 mL (catalyst amount: 0.88 mol, relative to the decyl alcohol-terminated polydimethyl methoxyalkane 100 mol is 0.50 mol. ,phase The condensation raw material was 4.0 mg (4.0 mg) as a condensation catalyst, and the mixture was stirred at 40 ° C for 1 hour. The obtained oil was stirred at 40 ° C for 1 hour while being depressurized (10 mmHg) to remove volatile components. Next, after returning the reaction solution to normal pressure, an organohydrogenpolyoxyalkylene (dimethylpolyoxane) was added in such a manner that the molar ratio of the alkenyl group to the hydrazine group became SiR 2 / SiH = 1/ 3.0. Copolymer-methylhydrogenpolyoxyalkylene) was stirred at 40 ° C for 1 hour. Thereafter, 0.038 mL of a platinum-carbonyl complex (platinum concentration: 2.0% by mass) was added (the platinum content was 0.375 ppm with respect to the organopolysiloxane, that is, 0.375 × 10 -4 g with respect to 100 g of the condensation raw material). The hydrogenation catalyst was stirred at 40 ° C for 10 minutes to prepare a phase A polyoxyxylene resin composition (second condensation reaction / addition reaction hardening type polyoxyl resin). The polyoxyxyl resin composition of the A stage has a viscosity of 8000 mPa at 25 ° C and 1 atm. s.

[化1] [Chemical 1]

[化2]R2-Si-(X1)3 (2) [Chemical 2] R 2 -Si-(X 1 ) 3 (2)

[化3]R2-Si-(X1)3 (2) [Chemical 3] R 2 -Si-(X 1 ) 3 (2)

將聚矽氧樹脂組合物100質量份、聚矽氧橡膠粒子(球狀,平均粒徑7μm)20質量份、及作為黃色螢光體之YAG粒子(球狀,平均粒徑7μm)10質量份投入具備攪拌機之混合容器中,使用攪拌機將該等混合。藉此,製備A階段之清漆。清漆之於25℃、1氣壓之條件下之黏度為20000mPa.s。 100 parts by mass of the polyoxyxylene resin composition, 20 parts by mass of polyoxyxylene rubber particles (spherical shape, average particle diameter: 7 μm), and 10 parts by mass of YAG particles (spherical shape, average particle diameter: 7 μm) as a yellow phosphor The mixture was placed in a mixing vessel equipped with a stirrer and mixed using a stirrer. Thereby, the varnish of the stage A was prepared. The varnish has a viscosity of 20000 mPa at 25 ° C and 1 atmosphere. s.

<B階段化步驟S6> <B-stage step S6>

其次,利用分配器(參照圖5)將清漆於包含PET之脫模片材之表面上塗佈為俯視矩形狀(尺寸:10mm×100mm),繼而,利用135℃之烘箱加熱15分鐘,藉此製造積層於脫模片材之厚度600μm之B階段之密封片材。 Next, the varnish was applied to the surface of the release sheet containing PET by a dispenser (refer to FIG. 5) in a rectangular shape in plan view (size: 10 mm × 100 mm), and then heated in an oven at 135 ° C for 15 minutes. A B-stage sealing sheet having a thickness of 600 μm laminated on the release sheet was produced.

測定剛製造後之B階段之密封片材之於25℃時之壓縮彈性模數,為0.040MPa(參照表1)。具體而言,藉由Aikoh Engineering公司製造 之精密荷重測定機,算出25℃時之壓縮彈性模數。 The compression elastic modulus of the sealing sheet of the B-stage immediately after the production at 25 ° C was measured and found to be 0.040 MPa (refer to Table 1). Specifically, manufactured by Aikoh Engineering The precision load measuring machine calculates the compressive elastic modulus at 25 °C.

<C階段化步驟S7> <C-stage step S7>

準備俯視為矩形狀之厚度150μm之安裝有LED之基板(參照圖7)。LED及基板之形狀、個數及尺寸記載於以下。 A substrate on which an LED is mounted having a rectangular shape and a thickness of 150 μm is prepared (see FIG. 7). The shape, number and size of the LED and the substrate are described below.

基板之形狀:俯視正方形狀 Shape of the substrate: square shape in plan

基板之尺寸:1邊8mm,最大長度11mm The size of the substrate: 1 side 8mm, maximum length 11mm

LED之形狀:俯視正方形狀 LED shape: overlooking the square shape

LED之尺寸:1邊0.3mm,最大長度0.4mm LED size: 1 side 0.3mm, maximum length 0.4mm

LED之安裝數:9 Number of LED installations: 9

LED之密度:基板之每單位面積(mm2)之LED之安裝數為0.14個/mm2 Density of LED: The number of LEDs per unit area (mm 2 ) of the substrate is 0.14 / mm 2

:每塊基板之LED之安裝數為9 : The number of LEDs installed per substrate is 9

LED之發光峰波長:452nm LED luminescence peak wavelength: 452nm

繼而,將安裝有LED之基板設置於壓製機中(參照圖7)。 Then, the substrate on which the LED is mounted is placed in the press (refer to FIG. 7).

另外,將B階段之密封片材配置於設置有基板之壓製機中(參照圖7)。 Further, the B-stage sealing sheet was placed in a press machine provided with a substrate (see FIG. 7).

繼而,藉由密封片材密封LED(參照圖8)。 Then, the LED is sealed by a sealing sheet (refer to FIG. 8).

具體而言,藉由平板壓製,於室溫下將密封片材壓下,以壓力0.2Mpa,利用密封片材埋設LED。藉此,藉由密封片材密封LED。 Specifically, the sealing sheet was pressed at room temperature by flat pressing, and the LED was buried with a sealing sheet at a pressure of 0.2 MPa. Thereby, the LED is sealed by the sealing sheet.

其後,將壓製密封片材及基板之平板投入烘箱中,將密封片材於150℃下加熱30分鐘,使密封片材進行C階段化。 Thereafter, the flat sheet for pressing the sealing sheet and the substrate was placed in an oven, and the sealing sheet was heated at 150 ° C for 30 minutes to C-stage the sealing sheet.

其後,將脫模片材自密封片材剝離(參照圖8之箭頭)。 Thereafter, the release sheet is peeled off from the sealing sheet (see an arrow in Fig. 8).

藉此,試製試製品。 Thereby, the prototype is trial-produced.

再者,試製品之個數為1個。 Furthermore, the number of prototypes is one.

<評價步驟S8> <Evaluation step S8> A.色溫 A. Color temperature

其後,評價試製品之螢光體片材。 Thereafter, the phosphor sheet of the prototype was evaluated.

具體而言,於試製品之基板上流過100mA之電流,實施藉由Intensified Multichannel Photodetector(MCPD-9800,大塚電子公司製造)測定剛流過電流後之光之色溫之點燈試驗。 Specifically, a current of 100 mA was passed through the substrate of the prototype, and a lighting test of the color temperature of the light immediately after the current was passed by an Intensified Multichannel Photodetector (MCPD-9800, manufactured by Otsuka Electronics Co., Ltd.) was carried out.

將其結果示於表1。 The results are shown in Table 1.

B.翹曲量 B. Warpage amount

又,測定試製品之螢光體片材之翹曲量。 Further, the amount of warpage of the phosphor sheet of the prototype was measured.

將其結果示於表1。 The results are shown in Table 1.

[決定步驟S2] [Decision Step S2]

已知試製品之光之色溫之測定值大致達到作為目標範圍之5450 K,故而使螢光體之調配比率相對於聚矽氧樹脂組合物100質量份,保持為10質量份,而決定製造條件。 It is known that the measured value of the color temperature of the light of the sample is approximately 5,450 K as the target range, so that the blending ratio of the phosphor is kept at 10 parts by mass with respect to 100 parts by mass of the polyoxynoxy resin composition, and the manufacturing conditions are determined. .

[製造步驟S3] [manufacturing step S3]

於製造步驟S3中,於決定步驟S2所決定之製造條件(螢光體之調配比率相對於聚矽氧樹脂組合物100質量份為10質量份)下,以分別與試製步驟S1中之清漆製備步驟S5、B階段化步驟S6及C階段化步驟S7相同之方式實施。藉此,製造LED裝置。 In the manufacturing step S3, the manufacturing conditions determined in the step S2 (the blending ratio of the phosphor is 10 parts by mass based on 100 parts by mass of the polyoxyxene resin composition) are separately prepared from the varnish in the trial production step S1. Step S5, the B-stage step S6 and the C-stage step S7 are carried out in the same manner. Thereby, an LED device is manufactured.

再者,LED裝置之個數為1000個。 Furthermore, the number of LED devices is 1000.

[製品之評價] [Product evaluation]

測定所製造之LED裝置之色溫,色溫成為作為目標之5450 K,其偏差亦在作為目標範圍之5425~5475 K之內。 The color temperature of the manufactured LED device was measured, and the color temperature became the target of 5,450 K, and the deviation was also within the target range of 5,425 to 5,475 K.

比較例1 Comparative example 1

除於<B階段化步驟S6>後,對較<C階段化步驟S7>前之B階段之螢光體片材實施<評價步驟S8>以外,以與實施例1相同之方式實施。 Except for the <B-stage step S6>, the same procedure as in the first embodiment is carried out except that the phosphor sheet of the B-stage before the <C-stage step S7> is subjected to the evaluation step S8.

如將<評價步驟S8>中之B階段之螢光體片材之「A.色溫」及 「B.翹曲量」的結果示於表1般,無法判斷製造之LED裝置之色溫是否達到目標值。 For example, the "A. Color temperature" of the B-stage phosphor sheet in <Evaluation Step S8> and The results of "B. Warpage amount" are shown in Table 1. It is impossible to judge whether or not the color temperature of the manufactured LED device has reached the target value.

(考察) (examine)

實施例1及比較例1之色溫(Tc)之差約為18 K,可知原因為因伴隨C階段化之硬化收縮所引起之翹曲量較大。 The difference in color temperature (Tc) between Example 1 and Comparative Example 1 was about 18 K, and it was found that the amount of warpage caused by the hardening shrinkage accompanying the C-stage was large.

因此,實施例1之決定步驟中所決定之製造條件中,考慮到因翹曲量較大所引起之色溫之變動,藉此,作為製品之LED裝置之色溫在目標範圍內。 Therefore, in the manufacturing conditions determined in the determining step of the first embodiment, the color temperature due to the large amount of warpage is considered, whereby the color temperature of the LED device as the product is within the target range.

另一方面,比較例1之決定步驟中所決定之製造條件中,未考慮因翹曲量較大所引起之色溫之變動,因此,作為製品之LED裝置之色溫在目標範圍外。 On the other hand, in the manufacturing conditions determined in the determining step of Comparative Example 1, the fluctuation of the color temperature due to the large amount of warpage was not considered. Therefore, the color temperature of the LED device as the product was outside the target range.

再者,上述發明係作為本發明之例示之實施形態而提供,但其僅為例示,不可限定性地解釋。由該技術領域之業者明確之本發明之變化例包含於下述申請專利範圍中。 Furthermore, the above invention is provided as an exemplified embodiment of the present invention, but it is merely illustrative and is not to be construed as limiting. Variations of the invention that are apparent to those skilled in the art are included in the scope of the following claims.

[產業上之可利用性] [Industrial availability]

光半導體裝置之製造方法用於製造LED裝置或LD裝置。 A method of manufacturing an optical semiconductor device is used to manufacture an LED device or an LD device.

S4‧‧‧試製條件決定步驟 S4‧‧‧Prototype conditions determination steps

S5‧‧‧清漆製備步驟 S5‧‧‧ varnish preparation steps

S6‧‧‧B階段化步驟 S6‧‧‧B staged steps

S7‧‧‧C階段化步驟 S7‧‧‧C stage step

S8‧‧‧評價步驟 S8‧‧‧Evaluation steps

S9‧‧‧記錄步驟 S9‧‧‧ Recording steps

Claims (3)

一種光半導體裝置之製造方法,其特徵在於:其係藉由螢光體片材被覆光半導體元件者,其具備:試製步驟,其試製試製品並進行評價;決定步驟,其基於上述試製品之評價,決定用以製造上述光半導體裝置之製造條件;及製造步驟,其基於上述決定步驟所決定之上述製造條件,製造藉由B階段之上述螢光體片材被覆上述光半導體元件,並使該螢光體片材進行C階段化之上述光半導體裝置,上述試製步驟具備製備包含螢光體及硬化性樹脂之清漆之清漆製備步驟,由上述清漆形成B階段之上述螢光體片材之B階段化步驟,使B階段之上述螢光體片材進行C階段化之C階段化步驟,及評價C階段之上述螢光體片材之評價步驟。 A method of manufacturing an optical semiconductor device, comprising: coating a photo-semiconductor element with a phosphor sheet, comprising: a trial production step of trial-manufacturing a prototype product; and a determining step based on the prototype product The evaluation determines the manufacturing conditions for manufacturing the optical semiconductor device, and the manufacturing step of manufacturing the optical semiconductor element by the B-stage phosphor sheet based on the manufacturing conditions determined by the determining step. In the optical semiconductor device in which the phosphor sheet is C-staged, the trial production step includes a varnish preparation step of preparing a varnish containing a phosphor and a curable resin, and the phosphor sheet of the B-stage is formed from the varnish. In the B-stage step, the C-stage step of the C-stage of the phosphor sheet of the B stage is performed, and the evaluation step of the phosphor sheet of the C stage is evaluated. 如請求項1之光半導體裝置之製造方法,其中於上述C階段化步驟中,藉由上述螢光體片材被覆上述光半導體元件,於上述評價步驟中,評價藉由上述螢光體片材被覆上述光半導體元件之上述光半導體裝置。 The method of manufacturing an optical semiconductor device according to claim 1, wherein in the step of step C, the photo-semiconductor element is coated on the phosphor sheet, and in the evaluating step, the phosphor sheet is evaluated The optical semiconductor device covering the above optical semiconductor element. 如請求項1之光半導體裝置之製造方法,其中上述試製步驟進而具備試製條件決定步驟,其基於在本次以前試製上述試製品之試製條件及評價之資訊,決定用以本次試製上述試製品之試製條件。 The method for manufacturing an optical semiconductor device according to claim 1, wherein the trial production step further includes a trial condition determining step, which is determined based on the trial production conditions and evaluation information of the prototype before the current trial. Trial conditions.
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