TW201407294A - Printing device, exposure printing device, printing method and storage medium - Google Patents

Printing device, exposure printing device, printing method and storage medium Download PDF

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Publication number
TW201407294A
TW201407294A TW102117818A TW102117818A TW201407294A TW 201407294 A TW201407294 A TW 201407294A TW 102117818 A TW102117818 A TW 102117818A TW 102117818 A TW102117818 A TW 102117818A TW 201407294 A TW201407294 A TW 201407294A
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Taiwan
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substrate
exposed
coordinate data
correction amount
pattern
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TW102117818A
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Chinese (zh)
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TWI620999B (en
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Hiroaki Kikuchi
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Fujifilm Corp
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0005Apparatus or processes for manufacturing printed circuits for designing circuits by computer
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4644Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4679Aligning added circuit layers or via connections relative to previous circuit layers
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/16Inspection; Monitoring; Aligning
    • H05K2203/166Alignment or registration; Control of registration
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341Surface mounted components

Abstract

A coordinate data representing designing first positions of a plurality of reference marks established in an exposed substrate, a coordinate data representing a printing pattern printed to the exposed substrate defined on the basis of the first positions, and a coordinate data representing an actual second position of each of the reference marks are obtained; a strain correction quantity for correcting a deviation of the first position and the second position for each of the reference marks is derived; each derived strain correction quantity is reduced at a rate defined beforehand; the coordinate data representing the printing pattern is corrected based on the reduced strain correction quantity when printing the printing pattern to the exposed substrate based on the coordinate data representing the printing pattern on the basis of the coordinate data representing the second position.

Description

微影裝置、曝光微影裝置、微影方法、記憶程式之記錄媒體 Recording medium for lithography device, exposure lithography device, lithography method, memory program

本發明是有關於一種描繪裝置、曝光描繪裝置、描繪方法及記憶程式的記錄媒體,尤其是有關於一種對基板描繪描繪圖案(pattern)的描繪裝置、藉由曝光對基板描繪描繪圖案的曝光描繪裝置、對基板描繪描繪圖案的描繪方法、以及記憶由上述描繪裝置執行的程式的記錄媒體。 The present invention relates to a drawing device, an exposure drawing device, a drawing method, and a memory recording medium, and more particularly to a drawing device for drawing a drawing pattern on a substrate, and an exposure drawing for drawing a drawing pattern on the substrate by exposure. A device, a method of drawing a drawing pattern on a substrate, and a recording medium that memorizes a program executed by the drawing device.

先前,眾所周知有如下多層配線基板,該多層配線基板是將對玻璃布進行含浸處理並加以乾燥的預浸體(prepreg)、或剛性功能優異的金屬板等作為核心基板,且具有於該等核心基板上將樹脂層與配線層多層堆積而成的多層配線構造。此外,近年來,對該多層配線基板要求薄型化及省空間化,因此提出有一種不具有核心層的薄型的多層配線基板。 In the prior art, a multilayer wiring board which is a prepreg which is impregnated with a glass cloth and dried, or a metal plate excellent in rigidity, is known as a core substrate, and has such a core. A multilayer wiring structure in which a resin layer and a wiring layer are stacked in a plurality of layers on a substrate. Further, in recent years, the multilayer wiring board has been required to be thinner and space-saving, and therefore, a thin multilayer wiring board having no core layer has been proposed.

於該等多層配線基板中,存在如下情況:由於化學處理而使基板產生翹曲、或由於強度不足而使基板產生變形,故而描繪於各層的電路圖案(配線圖案)的層間的位置對準變得困難。儘管如此,但藉由電路圖案的高密度化,電路圖案的焊盤徑(land diameter)及孔徑得以微細化,因此要求高精度的層間的位置對準。 In the multilayer wiring board, the substrate is warped due to chemical treatment, or the substrate is deformed due to insufficient strength. Therefore, the positional alignment between the layers of the circuit pattern (wiring pattern) drawn on each layer is changed. Difficult. However, by the high density of the circuit pattern, the pad diameter of the circuit pattern (land The diameter and the aperture are miniaturized, so high-precision alignment of the layers is required.

為了滿足該要求,提出有如下技術:相應於由基板的翹曲及變形所產生的基板的應變而使電路圖案變形後,於基板進行描繪。根據該技術,雖然層間的位置對準的精度提高,但每重疊一層會蓄積應變,因此有如下之虞:描繪於上位層的電路圖案的形狀與設計上的電路圖案的形狀背離,於基板上的電子零件的安裝變得困難。 In order to satisfy this requirement, there has been proposed a technique in which a circuit pattern is deformed in response to strain of a substrate caused by warpage and deformation of a substrate, and then drawn on a substrate. According to this technique, although the accuracy of the positional alignment between the layers is improved, strain is accumulated for each overlapping layer, and therefore, there is a case where the shape of the circuit pattern drawn on the upper layer deviates from the shape of the designed circuit pattern on the substrate. The installation of electronic parts has become difficult.

此外,亦提出有如下技術:將表示電路圖案的圖像分割成多個區域,針對每個分割區域,相應於基板的應變使上述圖像旋轉移動。根據該技術,於各分割區域,設計上的電路圖案的形狀與實際描繪的電路圖案的形狀的偏移量(amount of deviation)得以減少。然而,於該技術中,存在如下問題:由於將圖像分割成多個區域,故而圖像處理變得複雜;以及必需相對於各分割區域形成用以於層間連接電路圖案的定位孔的機構。 Further, a technique has been proposed in which an image indicating a circuit pattern is divided into a plurality of regions, and for each of the divided regions, the image is rotationally moved in accordance with the strain of the substrate. According to this technique, the amount of deviation of the shape of the design circuit pattern from the shape of the actually drawn circuit pattern is reduced in each divided region. However, in this technique, there is a problem that image processing becomes complicated by dividing an image into a plurality of regions; and a mechanism for forming positioning holes for connecting circuit patterns between the layers must be formed with respect to each divided region.

作為用以解決該等問題的技術,於日本專利特開2005-157326號公報及日本專利特開2011-95742號公報中,揭示有一種描繪裝置,其圖像處理不會變得複雜,並可以抑制所描繪的電路圖案自設計上的電路圖案的偏移。 As a technique for solving such problems, Japanese Patent Laid-Open Publication No. Hei. No. 2005-157326 and Japanese Patent Laid-Open No. 2011-95742 disclose a drawing device in which image processing is not complicated and can be The offset of the depicted circuit pattern from the designed circuit pattern is suppressed.

即,上述日本專利特開2005-157326號公報的描繪裝置是預先取得基板的變形資訊,基於該變形資訊,以記錄於變形後的基板的電路圖案成為與由光柵資料(raster data)表示的電路圖案相同的形狀的方式,更換該光柵資料。接著,基於經更換的光柵資料而於變形前的基板記錄電路圖案。 In the drawing device of Japanese Laid-Open Patent Publication No. 2005-157326, the deformation information of the substrate is obtained in advance, and based on the deformation information, the circuit pattern recorded on the deformed substrate becomes a circuit represented by raster data. Replace the raster data in the same way as the pattern. Next, the circuit pattern is recorded on the substrate before the deformation based on the replaced grating data.

此外,上述日本專利特開2011-95742號公報的描繪裝置 是使用描繪資料,而基於基板的位置座標的位移形態而修正基準點的位置,其中上述描繪資料包含規定作為描繪對象的對象區域的位置座標、以及設於上述對象區域的基準點的位置。接著,基於經修正的基準點的位置,以維持上述對象區域的形狀的狀態修正上述對象區域內的各座標。 Further, the drawing device of the above-mentioned Japanese Patent Laid-Open Publication No. 2011-95742 The position of the reference point is corrected based on the displacement pattern of the position coordinates of the substrate, wherein the drawing data includes a position coordinate defining a target region to be drawn and a position of a reference point provided in the target region. Next, each coordinate in the target region is corrected in a state in which the shape of the target region is maintained based on the position of the corrected reference point.

此處,於在多層配線基板的各層描繪電路圖案時,存在於描繪對象層的上位側與下位側分別設置有電路圖案層的情況。於此情況下,存在如下問題:若進行相應於基板的應變的電路圖案的變形,則有可能於上位側或下位側,安裝用焊墊(pad)的間距(pitch)自電子零件的電極的間距而偏移,最終於基板上的電子零件的安裝變得困難。此外,於在描繪於基板的電路圖案上描繪用以保護電路的阻焊(solder resist)圖案時,產生與相應於基板的應變進行阻焊圖案的變形同樣的問題。 Here, when the circuit pattern is drawn on each layer of the multilayer wiring board, the circuit pattern layer may be provided on the upper side and the lower side of the drawing target layer, respectively. In this case, there is a problem that if the deformation of the circuit pattern corresponding to the strain of the substrate is performed, there is a possibility that the pitch of the pad is mounted on the upper or lower side from the electrode of the electronic component. Offset by the pitch, the final mounting of the electronic components on the substrate becomes difficult. Further, when a solder resist pattern for protecting a circuit is drawn on a circuit pattern drawn on a substrate, the same problem as the deformation of the solder resist pattern corresponding to the strain of the substrate is generated.

然而,於日本專利特開2005-157326號公報所揭示的技術中,基於預先把握的變形狀態而使電路圖案變形,因此於已經在下位側層設置有電路圖案的情況下,用以連接下位側的層間的配線的位置對準的精度惡化。於此情況下,存在於基板上的電子零件的安裝變得困難的可能性。 However, in the technique disclosed in Japanese Laid-Open Patent Publication No. 2005-157326, the circuit pattern is deformed based on the deformation state that is grasped in advance, and therefore, when the circuit pattern is already provided on the lower side layer, the lower side is connected. The accuracy of the alignment of the wiring between the layers is deteriorated. In this case, the mounting of the electronic components existing on the substrate becomes difficult.

此外,於日本專利特開2011-95742號公報所揭示的技術中,存在隨著各對象區域的大小自修正前的對象區域的大小變化,而安裝用焊墊的間距自設定上的數值大幅變化的可能性。於此情況下,於基板上的電子零件的安裝亦變得困難。 Further, in the technique disclosed in Japanese Laid-Open Patent Publication No. 2011-95742, the size of each target region changes from the size of the target region before the correction, and the pitch of the mounting pads is largely changed from the set value. The possibility. In this case, the mounting of the electronic components on the substrate also becomes difficult.

本發明是鑒於上述問題而提出,其目的在於提供一種描繪裝置、曝光描繪裝置、描繪方法、記憶程式的記錄媒體,即便於相應於基板的應變使描繪圖案變形的情況下,亦可以高精度將電子零件安裝於基板上。 The present invention has been made in view of the above problems, and an object of the invention is to provide a drawing device, an exposure drawing device, a drawing method, and a memory recording medium, which can be accurately performed even when the drawing pattern is deformed in accordance with the strain of the substrate. The electronic components are mounted on the substrate.

為了達成上述目的,本發明的描繪裝置包括:取得構件,取得表示第一位置的座標資料、表示描繪圖案的座標資料以及表示第二位置的座標資料,上述第一位置為設於被曝光基板的多個基準標記的設計上的位置,上述描繪圖案描繪於以上述第一位置為基準而規定的上述被曝光基板,上述第二位置為上述多個基準標記各自的實際位置;導出構件,針對上述多個基準標記的各者,導出用以修正上述第一位置與上述第二位置的偏移的偏移修正量;減少構件,按預先規定的比例減少由上述導出構件導出的各偏移修正量;以及修正構件,於以表示上述第二位置的座標資料為基準而於上述被曝光基板描繪上述描繪圖案的情況下,基於經上述減少構件所減少的偏移修正量,而修正表示上述描繪圖案的座標資料。 In order to achieve the above object, the drawing device of the present invention includes: an acquisition member that acquires coordinate data indicating a first position, coordinate data indicating a drawing pattern, and coordinate data indicating a second position, wherein the first position is provided on the substrate to be exposed a design position of the plurality of fiducial marks, wherein the drawing pattern is drawn on the exposed substrate defined by the first position, wherein the second position is an actual position of each of the plurality of reference marks; and the deriving member is Each of the plurality of reference marks derives an offset correction amount for correcting a deviation between the first position and the second position; and the reducing means reduces the offset correction amount derived by the deriving means by a predetermined ratio And a correction means for correcting and indicating the drawing pattern based on the offset correction amount reduced by the reducing member when the drawing pattern is drawn on the exposed substrate with reference to the coordinate data indicating the second position Coordinate information.

根據本發明的描繪裝置,藉由取得構件,取得表示第一位置的座標資料、表示描繪圖案的座標資料以及表示第二位置的座標資料,其中上述第一位置為設於被曝光基板的多個基準標記的設計上的位置,上述描繪圖案描繪於以上述第一位置為基準而規定的上述被曝光基板,上述第二位置為上述多個基準標記各自的實際位置;藉由導出構件,針對上述多個基準標記的各者,導出用以修正上述第一位置與上述第二位置的偏移的偏移修正量。 According to the drawing device of the present invention, the coordinate data indicating the first position, the coordinate data indicating the drawing pattern, and the coordinate data indicating the second position are obtained by the acquiring means, wherein the first position is a plurality of substrates provided on the exposed substrate a design position of the fiducial mark, wherein the drawing pattern is drawn on the exposed substrate defined by the first position, wherein the second position is an actual position of each of the plurality of reference marks; and the deriving means is Each of the plurality of reference marks derives an offset correction amount for correcting the offset between the first position and the second position.

此處,於本發明的描繪裝置中,藉由減少構件,按預先 規定的比例減少由上述導出構件所導出的各偏移修正量。 Here, in the drawing device of the present invention, by reducing the member, pressing in advance The predetermined ratio reduces the amount of offset correction derived by the above-described deriving means.

此外,於本發明的描繪裝置中,藉由修正構件,於以表示上述第二位置的座標資料為基準,而於上述被曝光基板描繪上述描繪圖案的情況下,基於經上述減少構件所減少的偏移修正量而修正表示上述描繪圖案的座標資料。 Further, in the drawing device of the present invention, when the drawing pattern is drawn on the exposed substrate with reference to the coordinate data indicating the second position, the correction means is reduced by the reducing member. The coordinate data indicating the above-described drawing pattern is corrected by shifting the correction amount.

即,本發明的描繪裝置是於相應於被曝光基板的應變而修正表示描繪的描繪圖案的座標資料的情況下,於減少由被曝光基板的應變所產生的偏移修正量後,基於該偏移修正量而修正表示描繪圖案的座標資料。本發明的描繪裝置是以此方式來降低相對於由被曝光基板的應變所產生的基準標記的偏移的位置對準(變形)的程度。 That is, in the drawing device of the present invention, when the coordinate data indicating the drawing pattern to be drawn is corrected corresponding to the strain of the substrate to be exposed, after the offset correction amount due to the strain of the substrate to be exposed is reduced, based on the deviation The coordinate amount indicating the drawing pattern is corrected by shifting the correction amount. The drawing device of the present invention is in this way to reduce the degree of positional alignment (deformation) with respect to the offset of the fiducial mark generated by the strain of the substrate to be exposed.

如此,根據本發明的描繪裝置,使相對於由被曝光基板的應變所產生的基準標記的偏移的位置對準的程度降低,且使形狀性(shapeability)提高,因此與未應用本發明的情況相比,即便於相應於基板的應變而使描繪圖案變形的情況下,亦可以高精度將電子零件安裝於基板上。進而,藉由將本發明應用於對多層配線基板的描繪圖案的形成,每重疊一層則逐漸修正為保持形狀性的描繪圖案,最終可以實現精度更高的零件安裝。 As described above, according to the drawing device of the present invention, the degree of alignment with respect to the offset of the reference mark caused by the strain of the substrate to be exposed is lowered, and the shapeability is improved, and thus the present invention is not applied. In contrast, even when the drawing pattern is deformed in accordance with the strain of the substrate, the electronic component can be mounted on the substrate with high precision. Further, by applying the present invention to the formation of a drawing pattern for a multilayer wiring board, each layer is gradually corrected to a shape drawing pattern, and finally, a highly accurate component mounting can be realized.

此外,本發明的描繪裝置亦可為,上述減少構件藉由進行如下者中的至少一者,而按預先規定的比例減少上述導出的各偏移修正量,即:以上述偏移修正量乘以小於1的值、以上述偏移修正量除以大於1的值、以及自上述偏移修正量減去預先規定的量。藉此,雖位置對準的程度變差,但可以減輕圖案變形。 Further, in the drawing device of the present invention, the reducing means may reduce the derived offset correction amount by a predetermined ratio by performing at least one of the following, that is, multiplying by the offset correction amount The value is less than 1, the value of the offset correction is divided by a value greater than 1, and the predetermined amount is subtracted from the offset correction amount. Thereby, although the degree of positional alignment is deteriorated, pattern distortion can be alleviated.

此外,本發明的描繪裝置亦可為,上述描繪圖案是表示 電子配線的電路圖案,上述比例是以於上述描繪圖案的焊盤的內部收容導通孔(via)的方式規定的比例。藉此,可以防止成為製品不良的原因的焊盤缺損(導通孔向焊盤外的伸出)。 In addition, in the drawing device of the present invention, the drawing pattern may be represented by The circuit pattern of the electronic wiring has a ratio that is defined in such a manner that a via is accommodated inside the pad of the drawing pattern. Thereby, it is possible to prevent the pad defect (the extension of the via hole to the outside of the pad) which is a cause of the product defect.

此外,本發明的描繪裝置亦可為,上述描繪圖案是表示阻焊層的零件安裝用的開口孔的阻焊圖案,上述比例是以將上述開口孔收容於用以與零件接合的導體焊墊的內部的方式規定的比例。藉此,可以防止成為製品不良的導體焊墊與開口孔的偏移。 Further, in the drawing device of the present invention, the drawing pattern may be a solder resist pattern indicating an opening hole for mounting a component of the solder resist layer, and the ratio is such that the opening hole is received in a conductor pad for bonding with a component. The way the internal way is prescribed. Thereby, it is possible to prevent the offset of the conductor pad and the opening hole which are defective products.

此外,本發明的描繪裝置亦可為,上述導出構件自將上述被曝光基板的平行移動所致的偏移、旋轉所致的偏移、以及伸縮所致的偏移中的至少一者去除所得的偏移量,而導出上述偏移修正量。藉此,可以更準確地導出由被曝光基板的應變所產生的偏移量。 Further, in the drawing device of the present invention, the deriving member may be removed from at least one of an offset due to parallel movement of the exposed substrate, an offset due to rotation, and an offset due to expansion and contraction. The offset is derived while the above offset correction is derived. Thereby, the amount of shift due to the strain of the substrate to be exposed can be more accurately derived.

此外,本發明的描繪裝置亦可為,上述描繪圖案描繪於上述被曝光基板的多個區域的各者,上述基準標記設於描繪有上述描繪圖案的上述多個區域的各者,上述減少構件針對上述多個區域的各者而減少上述各偏移修正量。藉此,作為功能的複雜度雖增加,但相對於應變而變得穩固,能以更高的精度將電子零件安裝於基板上。 Further, in the drawing device of the present invention, the drawing pattern may be drawn on each of the plurality of regions of the exposed substrate, and the reference mark may be provided in each of the plurality of regions in which the drawing pattern is drawn, and the reducing member may be The above-described offset correction amount is reduced for each of the plurality of regions. As a result, although the complexity of the function is increased, it is stabilized with respect to strain, and the electronic component can be mounted on the substrate with higher precision.

此外,本發明的描繪裝置亦可更包括接收構件,該接收構件是接收用以減少由上述導出構件導出的各偏移修正量的調整參數的輸入,上述減少構件是基於經上述接收構件所接收的調整參數而算出上述比例。藉此,可以進一步提高使用者的便利性。 Furthermore, the drawing device of the present invention may further include a receiving member that receives an input of an adjustment parameter for reducing each offset correction amount derived by the deriving member, the reducing member being received based on the receiving member The above ratio is calculated by adjusting the parameters. Thereby, the convenience of the user can be further improved.

此外,本發明的描繪裝置亦可為,上述導出構件於在上述被曝光基板積層多個描繪圖案而進行描繪的情況,且於上述被 曝光基板的最上位層描繪描繪圖案的情況下,將上述偏移修正量設為0。藉此,可以更確實地將電子零件安裝於基板上。 Further, in the drawing device of the present invention, the deriving member may draw a plurality of drawing patterns on the exposed substrate, and may be drawn as described above. When the drawing pattern is drawn on the uppermost layer of the exposure substrate, the offset correction amount is set to zero. Thereby, the electronic component can be mounted on the substrate more reliably.

另一方面,為了達成上述目的,本發明的曝光描繪裝置包括本發明的描繪裝置以及曝光構件,該曝光構件是基於經上述描繪裝置的上述修正構件所修正的座標資料,而於上述被曝光基板曝光上述描繪圖案而進行描繪。 On the other hand, in order to achieve the above object, the exposure drawing apparatus of the present invention includes the drawing device of the present invention and an exposure member which is based on the coordinate data corrected by the correction member of the drawing device, and is exposed to the substrate to be exposed. The above-described drawing pattern is exposed and drawn.

因此,根據本發明的曝光描繪裝置,與本發明的描繪裝置同樣地發揮作用,因此與該描繪裝置同樣地,即便於相應於基板的應變而使描繪圖案變形的情況下,亦可以高精度將電子零件安裝於基板上。 Therefore, the exposure drawing device according to the present invention functions in the same manner as the drawing device of the present invention. Therefore, even in the case where the drawing pattern is deformed in accordance with the strain of the substrate, it is possible to accurately perform the same as the drawing device. The electronic components are mounted on the substrate.

此外,為了達成上述目的,本發明的程式是使電腦作為如下構件發揮功能:取得構件,取得表示設於被曝光基板的多個基準標記的設計上的第一位置的座標資料、表示描繪於以上述第一位置為基準而規定的上述被曝光基板的描繪圖案的座標資料、以及表示上述多個基準標記各自的實際的第二位置的座標資料;導出構件,針對上述多個基準標記的各者,導出用以修正上述第一位置與上述第二位置的偏移的偏移修正量;減少構件,按預先規定的比例減少由上述導出構件所導出的各偏移修正量;以及修正構件,於以表示上述第二位置的座標資料為基準而於上述被曝光基板描繪上述描繪圖案的情況下,基於經上述減少構件所減少的偏移修正量,而修正表示上述描繪圖案的座標資料。 Further, in order to achieve the above object, the program of the present invention causes a computer to function as a member for acquiring a coordinate data indicating a first position on a design of a plurality of reference marks provided on a substrate to be exposed, and a coordinate data of a drawing pattern of the substrate to be exposed defined by the first position and a coordinate data indicating an actual second position of each of the plurality of reference marks; and a deriving member for each of the plurality of reference marks Deriving an offset correction amount for correcting an offset between the first position and the second position; reducing a component, reducing each offset correction amount derived by the deriving member by a predetermined ratio; and correcting the component When the drawing pattern is drawn on the exposed substrate with reference to the coordinate data indicating the second position, the coordinate data indicating the drawing pattern is corrected based on the offset correction amount reduced by the reducing member.

因此,根據本發明的程式,可使電腦與本發明的描繪裝置同樣地發揮作用,因此與該描繪裝置同樣地,即便於相應於基板的應變而使描繪圖案變形的情況下,亦可以高精度將電子零件 安裝於基板上。 Therefore, according to the program of the present invention, the computer can be made to function similarly to the drawing device of the present invention. Therefore, even in the case where the drawing pattern is deformed in accordance with the strain of the substrate, the drawing can be made to be high. Electronic parts Mounted on the substrate.

進而,為了達成上述目的,本發明的描繪方法包括:取得步驟,取得表示設於被曝光基板的多個基準標記的設計上的第一位置的座標資料、表示描繪於以上述第一位置為基準而規定的上述被曝光基板的描繪圖案的座標資料、以及表示上述多個基準標記各自的實際的第二位置的座標資料;導出步驟,針對上述多個的基準標記的各者,導出用以修正上述第一位置與上述第二位置的偏移的偏移修正量;減少步驟,按預先規定的比例減少由上述導出步驟所導出的各偏移修正量;以及修正步驟,於以表示上述第二位置的座標資料為基準而於上述被曝光基板描繪上述描繪圖案的情況下,基於經上述減少步驟所減少的偏移修正量,而修正表示上述描繪圖案的座標資料。 Further, in order to achieve the above object, the drawing method of the present invention includes the obtaining step of acquiring coordinate data indicating a first position of a design of a plurality of reference marks provided on an exposed substrate, and indicating that the drawing is based on the first position. a coordinate data of a predetermined drawing pattern of the exposed substrate and coordinate data indicating an actual second position of each of the plurality of reference marks; and a deriving step of deriving the correction for each of the plurality of reference marks An offset correction amount of the offset between the first position and the second position; a decreasing step of reducing each offset correction amount derived by the deriving step by a predetermined ratio; and a correcting step to indicate the second When the drawing pattern is drawn on the exposed substrate based on the coordinate data of the position, the coordinate data indicating the drawing pattern is corrected based on the offset correction amount reduced by the reducing step.

因此,根據本發明的描繪方法,與本發明的描繪裝置同樣地發揮作用,因此與該描繪裝置同樣地,即便於相應於基板的應變而使描繪圖案變形的情況下,亦可以高精度將電子零件安裝於基板上。 Therefore, according to the drawing method of the present invention, similarly to the drawing device of the present invention, even in the case where the drawing pattern is deformed in accordance with the strain of the substrate, the drawing can be performed with high precision. The parts are mounted on a substrate.

根據本發明,發揮如下效果:即便於相應於基板的應變而使描繪圖案變形的情況下,亦可以高精度將電子零件安裝於基板上。 According to the present invention, even when the drawing pattern is deformed in accordance with the strain of the substrate, the electronic component can be mounted on the substrate with high precision.

10‧‧‧曝光描繪裝置 10‧‧‧Exposure drawing device

12‧‧‧平台 12‧‧‧ platform

14‧‧‧基體 14‧‧‧ base

16‧‧‧基台 16‧‧‧Abutment

18‧‧‧導軌 18‧‧‧ rails

20、32‧‧‧閘門 20, 32‧‧ ‧ gate

22‧‧‧曝光部 22‧‧‧Exposure Department

22a‧‧‧曝光頭 22a‧‧‧Exposure head

24‧‧‧光源單元 24‧‧‧Light source unit

26‧‧‧光纖 26‧‧‧ fiber optic

28‧‧‧圖像處理單元 28‧‧‧Image Processing Unit

30‧‧‧信號線纜 30‧‧‧Signal cable

34‧‧‧拍攝部 34‧‧‧Photography Department

34a‧‧‧軌道 34a‧‧ Track

40‧‧‧系統控制部 40‧‧‧System Control Department

42‧‧‧平台驅動部 42‧‧‧ Platform Drivers

44‧‧‧操作裝置 44‧‧‧Operating device

46‧‧‧拍攝驅動部 46‧‧‧ Shooting Drive Department

48‧‧‧外部輸入輸出部 48‧‧‧External input and output

62‧‧‧圖像 62‧‧‧ Images

62A、62B、62C、62D‧‧‧電路圖案 62A, 62B, 62C, 62D‧‧‧ circuit pattern

64‧‧‧對象區域 64‧‧‧Target area

66‧‧‧焊盤 66‧‧‧ pads

68‧‧‧導通孔 68‧‧‧through holes

C‧‧‧被曝光基板 C‧‧‧ exposed substrate

d‧‧‧孔徑 D‧‧‧ aperture

D‧‧‧焊盤徑 D‧‧‧ pad diameter

L‧‧‧孔環的寬度 The width of the L‧‧‧ hole ring

M、M1、M2、M3、M4‧‧‧基準標記 M, M1, M2, M3, M4‧‧‧ benchmark marks

P1‧‧‧圖像區域 P1‧‧‧ image area

P2‧‧‧完成曝光區域 P2‧‧‧Complete exposure area

S101~S123、S201~S207、S301、S303、S401、S403‧‧‧步驟 S101~S123, S201~S207, S301, S303, S401, S403‧‧‧ steps

SA0、SA1、SA2、SA3‧‧‧面積 SA0, SA1, SA2, SA3‧‧‧ area

X、Y、Z‧‧‧方向 X, Y, Z‧‧ Direction

圖1是表示實施方式的曝光描繪裝置的外觀的立體圖。 FIG. 1 is a perspective view showing an appearance of an exposure drawing device according to an embodiment.

圖2是表示實施方式的曝光描繪裝置的主要部分的構成的立體圖。 FIG. 2 is a perspective view showing a configuration of a main part of an exposure drawing device according to an embodiment.

圖3是表示實施方式的曝光描繪裝置的曝光頭(exposure head)的構成的立體圖。 3 is a perspective view showing a configuration of an exposure head of the exposure drawing device of the embodiment.

圖4是表示實施方式的曝光描繪裝置中形成於被曝光基板的完成曝光區域的平面圖。 4 is a plan view showing a completed exposure region formed on an exposed substrate in the exposure drawing device of the embodiment.

圖5是表示實施方式的曝光描繪裝置的電氣系統的構成的方塊圖。 Fig. 5 is a block diagram showing a configuration of an electrical system of an exposure drawing device according to an embodiment.

圖6A是供於說明實施方式的曝光描繪裝置中的曝光控制處理的原理的平面圖。 Fig. 6A is a plan view for explaining the principle of exposure control processing in the exposure drawing device of the embodiment.

圖6B是供於說明實施方式的曝光描繪裝置中的曝光控制處理的原理的平面圖。 Fig. 6B is a plan view for explaining the principle of exposure control processing in the exposure drawing device of the embodiment.

圖7A是表示於第一實施方式及第二實施方式的曝光描繪裝置中,成為相應於被曝光基板的應變之座標變換的對象的區域的平面圖。 FIG. 7A is a plan view showing a region to be subjected to coordinate conversion corresponding to the strain of the substrate to be exposed in the exposure drawing device according to the first embodiment and the second embodiment.

圖7B是表示於第一實施方式及第二實施方式的曝光描繪裝置中,成為相應於被曝光基板的應變之座標變換的對象的區域的平面圖。 FIG. 7B is a plan view showing a region to be subjected to coordinate conversion corresponding to the strain of the substrate to be exposed in the exposure drawing device according to the first embodiment and the second embodiment.

圖8是表示第一實施方式的曝光控制處理程式的處理流程的流程圖。 FIG. 8 is a flowchart showing a flow of processing of the exposure control processing program of the first embodiment.

圖9是表示第一實施方式的曝光控制處理中的設計上的標記的位置與所測量的標記的位置的平面圖。 9 is a plan view showing the position of the design mark and the position of the measured mark in the exposure control process of the first embodiment.

圖10是供於說明第一實施方式的曝光控制處理中的相應於被曝光基板的應變之座標變換的方法的平面圖。 FIG. 10 is a plan view for explaining a method of coordinate conversion corresponding to strain of an exposed substrate in the exposure control process of the first embodiment. FIG.

圖11A是表示第一實施方式的曝光描繪裝置的座標變換後的圖像的一例的平面圖,且表示未進行相應於被曝光基板的應變之座標變換的情況。 11A is a plan view showing an example of an image after coordinate conversion of the exposure drawing device according to the first embodiment, and shows a case where coordinate conversion corresponding to strain of the substrate to be exposed is not performed.

圖11B是表示第一實施方式的曝光描繪裝置的座標變換後的圖像的一例的平面圖,且表示減少應變修正量而進行相應於被曝光基板的應變之座標變換的情況。 11B is a plan view showing an example of an image after coordinate conversion of the exposure drawing device according to the first embodiment, and shows a case where the strain correction amount is reduced and the coordinate conversion corresponding to the strain of the substrate to be exposed is performed.

圖11C是表示第一實施方式的曝光描繪裝置的座標變換後的圖像的一例的平面圖,且表示不減少應變修正量而進行相應於被曝光基板的應變之座標變換的情況。 11C is a plan view showing an example of an image after the coordinate conversion of the exposure drawing device according to the first embodiment, and shows a case where the coordinate conversion corresponding to the strain of the substrate to be exposed is performed without reducing the strain correction amount.

圖12是表示於第一實施方式的曝光描繪裝置中,於被曝光基板多層地描繪電路圖案的情況之被曝光基板一例的剖面圖。 FIG. 12 is a cross-sectional view showing an example of an exposed substrate in a case where a circuit pattern is drawn in a plurality of layers on an exposed substrate in the exposure drawing device according to the first embodiment.

圖13是表示於第一實施方式的曝光描繪裝置中,於被曝光基板多層地描繪電路圖案的情況下之描繪於各層的圖像的一例的平面圖。 FIG. 13 is a plan view showing an example of an image drawn on each layer in the case where the circuit pattern is multi-layered on the substrate to be exposed in the exposure drawing device according to the first embodiment.

圖14是供於說明孔環(annular ring)的平面圖。 Figure 14 is a plan view for explaining an annular ring.

圖15是表示第二實施方式的曝光控制處理程式的處理流程的流程圖。 Fig. 15 is a flowchart showing the flow of processing of the exposure control processing program of the second embodiment.

圖16A是表示第二實施方式的曝光描繪裝置的座標變換後的圖像的一例的平面圖,且表示未進行相應於被曝光基板的應變之座標變換的情況。 16A is a plan view showing an example of an image after coordinate conversion of the exposure drawing device according to the second embodiment, and shows a case where coordinate conversion corresponding to strain of the substrate to be exposed is not performed.

圖16B是表示第二實施方式的曝光描繪裝置的座標變換後的圖像的一例的平面圖,且表示設置基於孔環的限制而進行相應於被曝光基板的應變之座標變換的情況。 16B is a plan view showing an example of an image after the coordinate conversion of the exposure drawing device according to the second embodiment, and shows a case where coordinate conversion corresponding to the strain of the substrate to be exposed is performed based on the restriction of the hole ring.

圖16C是表示第二實施方式的曝光描繪裝置的座標變換後的 圖像的一例的平面圖,且表示不設置上述限制而進行相應於被曝光基板的應變之座標變換的情況。 Fig. 16C is a diagram showing the coordinate conversion of the exposure drawing device of the second embodiment; A plan view of an example of an image shows a case where the coordinate conversion corresponding to the strain of the substrate to be exposed is performed without providing the above limitation.

圖17是供於說明第二實施方式的曝光控制處理中的相應於被曝光基板的應變之座標變換的方法的平面圖。 17 is a plan view for explaining a method of coordinate conversion corresponding to strain of an exposed substrate in the exposure control process of the second embodiment.

圖18是表示第三實施方式的曝光控制處理程式的處理流程的流程圖。 FIG. 18 is a flowchart showing a flow of processing of the exposure control processing program of the third embodiment.

圖19A是表示於第四實施方式的曝光描繪裝置中成為相應於被曝光基板的應變之座標變換的對象的區域的平面圖。 19A is a plan view showing a region to be an object of coordinate conversion corresponding to strain of a substrate to be exposed in the exposure drawing device of the fourth embodiment.

圖19B是表示於第四實施方式的曝光描繪裝置中成為相應於被曝光基板的應變之座標變換的對象的區域的平面圖。 19B is a plan view showing a region to be an object of coordinate conversion corresponding to the strain of the substrate to be exposed in the exposure drawing device of the fourth embodiment.

圖19C是表示於第四實施方式的曝光描繪裝置中成為相應於被曝光基板的應變之座標變換的對象的區域的平面圖。 19C is a plan view showing a region which is an object of coordinate conversion corresponding to the strain of the substrate to be exposed in the exposure drawing device of the fourth embodiment.

圖20A是表示於第四實施方式的曝光描繪裝置中成為相應於被曝光基板的應變之座標變換的對象的區域的平面圖。 FIG. 20A is a plan view showing a region to be an object of coordinate conversion corresponding to strain of an exposed substrate in the exposure drawing device of the fourth embodiment.

圖20B是表示於第四實施方式的曝光描繪裝置中成為相應於被曝光基板的應變之座標變換的對象的區域的平面圖。 FIG. 20B is a plan view showing a region to be an object of coordinate conversion corresponding to the strain of the substrate to be exposed in the exposure drawing device of the fourth embodiment.

圖20C是表示於第四實施方式的曝光描繪裝置中成為相應於被曝光基板的應變之座標變換的對象的區域的平面圖。 FIG. 20C is a plan view showing a region to be an object of coordinate conversion corresponding to the strain of the substrate to be exposed in the exposure drawing device of the fourth embodiment.

圖21是表示第四實施方式的曝光控制處理程式的處理流程的流程圖。 21 is a flow chart showing the flow of processing of the exposure control processing program of the fourth embodiment.

[第一實施方式] [First Embodiment]

以下,使用附圖對實施方式的曝光描繪裝置進行詳細說 明。此外,本實施方式中,列舉將本發明應用於曝光描繪裝置的情況作為例子進行說明,該曝光描繪裝置是對被曝光基板(下述被曝光基板C)曝光光束而描繪電路圖案、表示阻焊層的零件安裝用開口孔的阻焊圖案等描繪圖案。此外,被曝光基板C是印刷電路板(printed circuit board)、平板顯示器(flat panel display)用玻璃基板等平板基板。 Hereinafter, the exposure drawing device of the embodiment will be described in detail with reference to the drawings. Bright. Further, in the present embodiment, a case where the present invention is applied to an exposure drawing device that exposes a light beam to an exposed substrate (the substrate to be exposed C below) and draws a circuit pattern to indicate solder resist is described as an example. A pattern is drawn by a solder resist pattern or the like of the opening hole for the component mounting of the layer. Further, the substrate C to be exposed is a flat substrate such as a printed circuit board or a glass substrate for a flat panel display.

如圖1及圖2所示,本實施方式的曝光描繪裝置10包括用以固定被曝光基板C的平板狀的平台(stage)12。於平台12的上表面設置有吸入空氣的多個吸入孔。藉此,於在平台12的上表面載置被曝光基板C時,藉由吸入被曝光基板C與平台12間的空氣,而將被曝光基板C真空吸附於平台12。 As shown in FIGS. 1 and 2, the exposure drawing device 10 of the present embodiment includes a flat plate stage 12 for fixing the substrate C to be exposed. A plurality of suction holes for taking in air are provided on the upper surface of the platform 12. Thereby, when the exposed substrate C is placed on the upper surface of the stage 12, the exposed substrate C is vacuum-adsorbed to the stage 12 by sucking air between the exposed substrate C and the stage 12.

此外,以下,將平台12移動的方向規定為Y方向,將相對於該Y方向而於水平面內正交的方向規定為X方向,將與Y方向於鉛垂面內正交的方向規定為Z方向。 Further, hereinafter, the direction in which the stage 12 is moved is defined as the Y direction, the direction orthogonal to the horizontal direction in the horizontal direction is defined as the X direction, and the direction orthogonal to the Y direction in the vertical plane is defined as Z. direction.

此外,平台12支撐於平板狀的基台16,該基台16設置為可於桌狀的基體14的上表面移動。即,於基體14的上表面設置有1根或多根(本實施方式中為2根)導軌18。基台16是以可沿導軌18在Y方向自由地移動的方式支撐,藉由包含馬達等的驅動機構(下述平台驅動部42)而驅動,從而進行移動。平台12連動於基台16的移動而沿導軌18在Y方向移動。 Further, the platform 12 is supported by a flat base 16 which is arranged to be movable on the upper surface of the table-like base 14. That is, one or a plurality of (two in the present embodiment) guide rails 18 are provided on the upper surface of the base 14. The base 16 is supported so as to be freely movable in the Y direction along the guide rail 18, and is driven by a drive mechanism (such as the following stage drive unit 42) including a motor or the like to move. The platform 12 moves in the Y direction along the guide rail 18 in conjunction with the movement of the base 16.

於基體14的上表面設置有以跨越2根導軌18的方式立設的閘門20。載置於平台12的被曝光基板C是以沿護軌18進出閘門20的開口部的方式移動。於閘門20的開口部的上部,安裝有朝向該開口部曝光光束的曝光部22。藉由該曝光部22,於平台 12沿導軌18移動而位於上述開口部的情況下,對載置於平台12的被曝光基板C的上表面曝光光束。 A shutter 20 that is erected across the two rails 18 is provided on the upper surface of the base 14. The exposed substrate C placed on the stage 12 moves in such a manner that the guard rail 18 enters and exits the opening of the shutter 20. An exposure portion 22 that exposes a light beam toward the opening is attached to an upper portion of the opening of the shutter 20. By the exposure unit 22, on the platform When the guide rail 18 moves along the guide portion 18, the light beam is exposed to the upper surface of the substrate C to be exposed placed on the stage 12.

本實施方式的曝光部22是包含多個(本實施方式中為10個)曝光頭22a而構成。此外,於曝光部22分別連接有光纖26與信號線纜30,該光纖26是自下述光源單元24抽出,該信號線纜30是自下述圖像處理單元28抽出。 The exposure unit 22 of the present embodiment is configured by including a plurality of (ten in the present embodiment) exposure heads 22a. Further, an optical fiber 26 and a signal cable 30 are connected to the exposure unit 22, and the optical fiber 26 is taken out from the light source unit 24, which is extracted from the image processing unit 28 described below.

各曝光頭22a具有作為反射型的空間光調變元件的數位微鏡裝置(Digital Micro-mirror Device,DMD)。曝光頭22a是藉由基於自圖像處理單元28所輸入的圖像資訊來控制DMD,而調變來自光源單元24的光束。曝光描繪裝置10藉由將該經調變的光束照射至被曝光基板C而對被曝光基板C進行曝光。此外,空間光調變元件並不限定於反射型,亦可為液晶等透射型的空間光調變元件。 Each of the exposure heads 22a has a digital micro-mirror device (DMD) as a reflective spatial light modulation element. The exposure head 22a modulates the light beam from the light source unit 24 by controlling the DMD based on the image information input from the image processing unit 28. The exposure drawing device 10 exposes the substrate C to be exposed by irradiating the modulated light beam to the substrate C to be exposed. Further, the spatial light modulation element is not limited to the reflection type, and may be a transmissive spatial light modulation element such as a liquid crystal.

於基體14的上表面,進而設置有以跨越2根導軌18的方式立設的閘門32。載置於平台12的被曝光基板C是以沿護軌18進出閘門32的開口部的方式移動。 On the upper surface of the base 14, a shutter 32 that is erected across the two guide rails 18 is further provided. The exposed substrate C placed on the stage 12 moves in such a manner that the guard rail 18 enters and exits the opening of the shutter 32.

於閘門32的開口部的上部,安裝有用以拍攝開口部的1個或多個(本實施方式中為2個)拍攝部34。拍攝部34是內設有1次發光時間極短的閃光儀(stroboscope)的電荷耦合器件(Charge Coupled Device,CCD)相機等。此外,於閘門32的開口部的上部,在水平面內沿相對於平台12的移動方向(Y方向)垂直的方向(X方向)設置有軌道34a,各個拍攝部34由軌道34a導引而可移動地設置。藉由該拍攝部34,於平台12沿導軌18移動而位於上述開口部的情況下,拍攝載置於平台12的被曝光基板C的上 表面。 One or a plurality of (two in the present embodiment) imaging units 34 for imaging the opening are attached to the upper portion of the opening of the shutter 32. The imaging unit 34 is a charge coupled device (CCD) camera or the like in which a single-stroke flashlight is provided. Further, in the upper portion of the opening portion of the shutter 32, a rail 34a is provided in a horizontal direction (X direction) perpendicular to the moving direction (Y direction) of the stage 12 in the horizontal plane, and each of the photographing portions 34 is guided by the rail 34a to be movable. Ground setting. By the imaging unit 34, when the stage 12 moves along the guide rail 18 and is located at the opening, the image is placed on the exposed substrate C placed on the stage 12. surface.

其次,對本實施方式的利用曝光頭22a的曝光處理進行說明。 Next, the exposure processing by the exposure head 22a of the present embodiment will be described.

如圖3所示,由曝光頭22a曝光的區域,即,圖像區域P1,其是一邊相對於平台12的移動方向(Y方向)而以預先規定的傾斜角傾斜的矩形狀。此外,若平台12於在閘門20的開口部移動時藉由曝光頭22a曝光光束,則隨著平台12的移動,而於被曝光基板C,相對於每個曝光頭22a形成帶狀的完成曝光區域P2。 As shown in FIG. 3, the region exposed by the exposure head 22a, that is, the image region P1, is a rectangular shape in which one side is inclined at a predetermined inclination angle with respect to the moving direction (Y direction) of the stage 12. Further, if the stage 12 exposes the light beam by the exposure head 22a while moving in the opening portion of the shutter 20, the strip-shaped finish exposure is formed with respect to each of the exposure heads 22a with respect to the substrate C to be exposed as the stage 12 moves. Area P2.

此外,如圖4所示,矩陣(matrix)狀排列的各個曝光頭22a是於X方向以圖像區域P1的長邊的長度的自然數倍(本實施方式中為1倍)的距離逐一地偏移配置。而且,各個完成曝光區域P2是與鄰接的完成曝光區域P2局部地重疊而形成。 Further, as shown in FIG. 4, each of the exposure heads 22a arranged in a matrix shape is one by one in the X direction with a natural multiple of the length of the long side of the image region P1 (one time in the present embodiment). Offset configuration. Further, each of the completed exposure regions P2 is formed to partially overlap the adjacent completed exposure region P2.

其次,對本實施方式的曝光描繪裝置10的電氣系統的構成進行說明。 Next, the configuration of the electric system of the exposure drawing device 10 of the present embodiment will be described.

如圖5所示,於曝光描繪裝置10中設置有系統控制部40,該系統控制部40分別電性連接於裝置各部,藉由該系統控制部40而統一地控制曝光描繪裝置10的各部。此外,曝光描繪裝置10包括平台驅動部42、操作裝置44、拍攝驅動部46以及外部輸入輸出部48。 As shown in FIG. 5, the exposure drawing device 10 is provided with a system control unit 40 that is electrically connected to each unit of the apparatus, and the system control unit 40 collectively controls the respective units of the exposure drawing apparatus 10. Further, the exposure drawing device 10 includes a stage driving unit 42, an operation device 44, an imaging driving unit 46, and an external input/output unit 48.

系統控制部40包括中央處理單元(Central Processing Unit,CPU)、隨機存取記憶體(Random Access Memory,RAM)、唯讀記憶體(Read Only Memory,ROM)、以及硬碟驅動器(Hard Disk Drive,HDD)。此外,系統控制部40藉由上述CPU使光束自光源單元24出射,並且於對應平台12的移動的時序(timing) 藉由圖像處理單元28輸出對應的圖像資訊,藉此控制對被曝光基板C的光束的曝光。 The system control unit 40 includes a central processing unit (CPU), a random access memory (RAM), a read only memory (ROM), and a hard disk drive (Hard Disk Drive, HDD). Further, the system control unit 40 causes the light beam to be emitted from the light source unit 24 by the CPU, and the timing of the movement of the corresponding stage 12 (timing) The corresponding image information is output by the image processing unit 28, thereby controlling exposure of the light beam to the substrate C to be exposed.

平台驅動部42具有包含馬達或油壓泵等的驅動機構,藉由系統控制部40的控制而驅動平台12。 The platform drive unit 42 has a drive mechanism including a motor or a hydraulic pump, and the platform 12 is driven by the control of the system control unit 40.

操作裝置44包括顯示部與輸入部,該顯示部是藉由系統控制部40的控制而顯示各種資訊,該輸入部是藉由使用者操作而輸入各種資訊。 The operation device 44 includes a display unit that displays various kinds of information under the control of the system control unit 40, and an input unit that inputs various kinds of information by a user operation.

拍攝驅動部46具有包含馬達或油壓泵等的驅動機構,藉由系統控制部40的控制而驅動拍攝部34。 The imaging drive unit 46 includes a drive mechanism including a motor or a hydraulic pump, and the imaging unit 34 is driven by the control of the system control unit 40.

外部輸入輸出部48是與連接於曝光描繪裝置10的個人電腦等資訊處理裝置之間進行各種資訊的輸入輸出。 The external input/output unit 48 inputs and outputs various kinds of information to and from an information processing device such as a personal computer connected to the exposure drawing device 10.

此處,本實施方式的曝光描繪裝置10如上所述般,對被曝光基板C描繪由圖像資訊表示的描繪圖案等圖像。另一方面,如圖2所示,於被曝光基板C設置有作為描繪圖像時之定位的基準的對準標記(以下稱為「基準標記」)M。曝光描繪裝置10是於對被曝光基板C曝光光束前,藉由拍攝部34拍攝基準標記M,根據所拍攝的圖像測量基準標記M的位置。接著,曝光描繪裝置10根據所測量的位置而決定描繪圖像的區域。 Here, the exposure drawing device 10 of the present embodiment draws an image such as a drawing pattern indicated by image information on the substrate C to be exposed as described above. On the other hand, as shown in FIG. 2, an alignment mark (hereinafter referred to as "reference mark") M as a reference for positioning when an image is drawn is provided on the substrate C to be exposed. The exposure drawing device 10 captures the reference mark M by the imaging unit 34 before exposing the light beam to the substrate C to be exposed, and measures the position of the reference mark M based on the captured image. Next, the exposure drawing device 10 determines the region in which the image is drawn based on the measured position.

即,如圖6A所示,於本實施方式的被曝光基板C設置有上述的4個基準標記M1至M4(以下,亦將4個基準標記統稱為基準標記M)。此外,於被曝光基板C,通常相對於基準標記M1至M4而於預先規定的相對位置描繪圖像62。此外,本實施方式中,分別於圖6A及圖6B的正視左上的位置設置有基準標記M1,於右上的位置設置有基準標記M2,於左下的位置設置有基 準標記M3,以及於右下的位置設置有基準標記M4。曝光描繪裝置10是基於所測量的基準標記M1至M4的各個位置自設計上的基準標記M1至M4的位置的偏移量,而推測被曝光基板C的應變。而且,曝光描繪裝置10相應於所推測的被曝光基板C的應變,作為一例,如圖6B所示般使圖像62變形,並將變形的圖像62描繪於被曝光基板C。 That is, as shown in FIG. 6A, the above-described four reference marks M1 to M4 are provided in the substrate C to be exposed of the present embodiment (hereinafter, four reference marks are also collectively referred to as reference marks M). Further, on the substrate C to be exposed, the image 62 is usually drawn at a predetermined relative position with respect to the reference marks M1 to M4. Further, in the present embodiment, the reference mark M1 is provided at the position on the upper left side in the front view of FIG. 6A and FIG. 6B, the reference mark M2 is provided on the upper right position, and the base is provided at the lower left position. The reference mark M3 and the position mark M4 are provided at the lower right position. The exposure drawing device 10 estimates the strain of the substrate C to be exposed based on the offset amount of each of the measured reference marks M1 to M4 from the positions of the design reference marks M1 to M4. Further, the exposure drawing device 10 corresponds to the estimated strain of the substrate C to be exposed, and as an example, the image 62 is deformed as shown in FIG. 6B, and the deformed image 62 is drawn on the substrate C to be exposed.

此外,於本實施方式的曝光描繪裝置10中,於相應於被曝光基板C的應變而使圖像變形時,作為一例,如圖7A所示,可將作為描繪對象的區域整體設為座標變換的對象,即,對象區域(圖7A及圖7B中以點花紋表示的區域)64。然而,上述對象區域64並不限定於此,若預先知悉相對於基準標記M1至M4的相對位置,則可設為任意大小及形狀。例如,如圖7B所示,亦可將由4個基準標記M1至M4包圍的矩形狀區域設為對象區域64。 Further, in the exposure drawing device 10 of the present embodiment, when the image is deformed in accordance with the strain of the substrate C to be exposed, as an example, as shown in FIG. 7A, the entire region to be drawn can be set as a coordinate transformation. The object, that is, the object area (the area indicated by the dot pattern in FIGS. 7A and 7B) 64. However, the target region 64 is not limited thereto, and may be any size and shape if the relative positions with respect to the reference marks M1 to M4 are known in advance. For example, as shown in FIG. 7B, a rectangular region surrounded by four reference marks M1 to M4 may be referred to as a target region 64.

此外,於在被曝光基板C的端部等描繪被曝光基板C的識別編號等電路圖案以外的圖像的情況下,可不對該圖像的描繪區域進行座標變換而僅對電路圖案的描繪區域進行座標變換。其原因在於,例如,於對表示被曝光基板C的識別編號的圖像進行曝光描繪的情況等,相應於被曝光基板C的應變而不使該圖像變形更容易確認描繪內容。 In addition, when an image other than the circuit pattern such as the identification number of the exposed substrate C is drawn at the end portion of the substrate C to be exposed, or the like, the drawing region of the image is not subjected to coordinate conversion but only the drawing region of the circuit pattern. Perform coordinate transformation. This is because, for example, in the case of performing exposure drawing on an image indicating the identification number of the substrate C to be exposed, it is easier to confirm the drawing content in accordance with the strain of the substrate C to be exposed without deforming the image.

其次,參照圖8,對本實施方式的曝光描繪裝置10的作用進行說明。此外,圖8是表示於經由操作裝置44輸入執行指示時,藉由曝光描繪裝置10的系統控制部40執行的曝光控制處理程式的處理流程的流程圖。該程式是預先記憶於設於系統控制部40的ROM的預定區域中。 Next, the operation of the exposure drawing device 10 of the present embodiment will be described with reference to Fig. 8 . In addition, FIG. 8 is a flowchart showing a flow of processing of an exposure control processing program executed by the system control unit 40 of the exposure drawing device 10 when an execution instruction is input via the operation device 44. This program is stored in advance in a predetermined area of the ROM provided in the system control unit 40.

首先,於步驟S101中,取得表示描繪於被曝光基板C的圖像(本實施方式中為表示外廓形狀設為矩形狀的描繪圖案的圖像)的座標資料(本實施方式中為向量資料),即,圖像資訊。此時,系統控制部40讀出HDD中所記憶的圖像資訊,或者藉由經由外部輸入輸出部48而自外部輸入圖像資訊,而取得圖像資訊。本實施方式中,由圖像資訊表示的圖像的外廓形狀為矩形狀,但並不限定於此,亦可為任意形狀。此外,本實施方式中,上述圖像資訊為表示描繪圖案等的向量資料,但並不限定於此,亦可為光柵資料。 First, in step S101, coordinate data indicating that the image is drawn on the substrate C to be exposed (in the present embodiment, an image showing a drawing pattern having a rectangular outer shape) is acquired (in this embodiment, vector data) ), that is, image information. At this time, the system control unit 40 reads the image information stored in the HDD or acquires the image information by externally inputting the image information via the external input/output unit 48. In the present embodiment, the outline of the image represented by the image information is rectangular, but the shape is not limited thereto, and may be any shape. Further, in the present embodiment, the image information is vector data indicating a drawing pattern or the like, but is not limited thereto, and may be raster data.

於接下來的步驟S103中,取得表示被曝光基板C的設計上的基準標記M1至M4的位置(第一位置)的位置資訊作為座標資料。此時,系統控制部40讀出HDD中預先記憶的位置資訊,或者藉由經由外部輸入輸出部48而自外部輸入位置資訊,而取得該位置資訊。 In the next step S103, position information indicating the position (first position) of the design reference marks M1 to M4 of the substrate C to be exposed is acquired as coordinate data. At this time, the system control unit 40 reads the position information previously stored in the HDD, or acquires the position information by externally inputting the position information via the external input/output unit 48.

或者,亦可於HDD中預先記憶對應表,該對應表是將被曝光基板C的識別資訊與表示設計上的基準標記M1至M4的位置的位置資訊建立關聯,基於該對應表而導出設計上的基準標記M1至M4的位置。更具體而言,亦可根據藉由下述步驟S107的標記測量所獲得的基準標記M1至M4的位置,而識別被曝光基板C,並且取得與藉由識別所獲得的被曝光基板C的識別資訊建立有關聯的位置資訊。 Alternatively, the correspondence table may be pre-memorized in the HDD, and the correspondence table associates the identification information of the exposed substrate C with the position information indicating the position of the design reference marks M1 to M4, and derives the design based on the correspondence table. The position of the reference marks M1 to M4. More specifically, the exposed substrate C can be identified based on the positions of the reference marks M1 to M4 obtained by the mark measurement of the following step S107, and the identification of the exposed substrate C obtained by the recognition can be obtained. The information establishes associated location information.

於接下來的步驟S105中,使平台12移動,直至被曝光基板C位於底下位置為止,即,各個基準標記M1至M4包含於拍攝部34的拍攝區域的位置。 In the next step S105, the stage 12 is moved until the substrate C to be exposed is positioned at the bottom position, that is, the respective reference marks M1 to M4 are included in the position of the imaging region of the imaging unit 34.

於接下來的步驟S107中,測量實際的基準標記M1至M4的位置(第二位置)。此時,系統控制部40自拍攝部34所拍攝的圖像而提取對應基準標記M1至M4的區域,導出基準標記M的位置座標。本實施方式中,將上述所拍攝的圖像中的基準標記M的區域的重心座標作為基準標記M1至M4的位置座標。此外,本實施方式中,自所拍攝的圖像而導出基準標記M的位置座標,但並不限定於此,亦可自外部輸入表示利用測量而獲得的基準標記M的位置座標的資訊。 In the next step S107, the positions (second positions) of the actual reference marks M1 to M4 are measured. At this time, the system control unit 40 extracts the regions corresponding to the reference marks M1 to M4 from the image captured by the imaging unit 34, and derives the position coordinates of the reference mark M. In the present embodiment, the coordinates of the center of gravity of the region of the reference mark M in the above-described captured image are used as the position coordinates of the reference marks M1 to M4. Further, in the present embodiment, the position coordinates of the reference mark M are derived from the captured image. However, the present invention is not limited thereto, and information indicating the position coordinates of the reference mark M obtained by the measurement may be input from the outside.

作為一例,如圖9所示,所測量的基準標記M1至M4的位置存在分別自設計上的基準標記M1至M4的位置偏移的情況。此外,圖9中,將所測量的基準標記M1至M4的位置以實線表示,將設計上的基準標記M1至M4的位置以虛線表示。此外,以下,如圖9所示,將被曝光基板C的正視左右方向設為x方向,將正視上下方向設為y方向而進行說明。 As an example, as shown in FIG. 9, the positions of the measured reference marks M1 to M4 are shifted from the positions of the design reference marks M1 to M4, respectively. Further, in Fig. 9, the positions of the measured reference marks M1 to M4 are indicated by solid lines, and the positions of the design reference marks M1 to M4 are indicated by broken lines. In the following, as shown in FIG. 9 , the front and rear directions of the substrate C to be exposed are referred to as the x direction, and the vertical direction is referred to as the y direction.

於接下來的步驟S109中,根據步驟S103中取得的設計上的基準標記M1至M4的位置與步驟S107中測量的基準標記M1至M4的位置的偏移量,來導出被曝光基板C的旋轉量、偏位(offset)量、伸縮倍率中的至少一者。此外,此處所謂的上述旋轉量,是指預先規定的正交座標系(本實施方式中,作為一例,為圖9所示的x-y座標系)中,自設計上的基準標記M的位置至對應的實際的基準標記M的位置的旋轉角度。此外,此處所謂的上述偏位量,是指上述正交座標系中,自設計上的基準標記M的位置至對應的實際的基準標記M的位置的平行移動量。而且,此處所謂的上述伸縮倍率,是指上述正交座標系中,自設計上的基 準標記M的位置至對應的實際的基準標記M的位置的擴大或縮小倍率。本實施方式中,導出所有的被曝光基板C的旋轉量、偏位量、伸縮倍率。此時,藉由使用4個基準標記M1至M4的各座標的最小平方法,導出關於被曝光基板C的x方向的偏位量ofsx、y方向的偏位量ofsy、x方向的伸縮倍率kx、y方向的伸縮倍率ky、旋轉量θ等各參數。 In the next step S109, the rotation of the exposed substrate C is derived based on the offset of the position of the design reference marks M1 to M4 obtained in step S103 and the positions of the reference marks M1 to M4 measured in step S107. At least one of a quantity, an offset amount, and a telescopic magnification. In addition, the above-mentioned amount of rotation means a predetermined orthogonal coordinate system (in the present embodiment, as an example, the xy coordinate system shown in FIG. 9), from the position of the design reference mark M to The rotation angle of the position of the corresponding actual reference mark M. Here, the above-described offset amount refers to a parallel movement amount from the position of the design reference mark M to the position of the corresponding actual reference mark M in the orthogonal coordinate system. Further, the above-described expansion ratio refers to a self-design basis in the above-described orthogonal coordinate system. The enlargement or reduction magnification of the position of the quasi-marker M to the position of the corresponding actual fiducial mark M. In the present embodiment, the amount of rotation, the amount of deflection, and the expansion/contraction ratio of all the substrates C to be exposed are derived. At this time, by using the least square method of each of the four reference marks M1 to M4, the amount of deviation of the x in the x direction of the substrate C to be exposed, the amount of deviation of the y direction of the sound, and the expansion and contraction magnification kx in the x direction are derived. Each parameter such as the expansion/contraction ratio ky and the rotation amount θ in the y direction.

即,於導出上述各參數時,設計上的基準標記M1至M4的位置與由步驟S107的處理所測量的基準標記M1至M4的位置包含上述各參數而具有明確的關係。於此情況下,以上述各參數的平均偏差達到最小的方式決定上述各參數(作為一例,參照日本專利特開昭61-44429號公報等)。決定該上述各參數的方法是仿射轉換(affine transformation)等中所使用的已知的方法,因此此處省略其以外的說明。 That is, when the above parameters are derived, the positions of the design reference marks M1 to M4 and the positions of the reference marks M1 to M4 measured by the processing of step S107 include the above-described respective parameters and have a clear relationship. In this case, the above-described respective parameters are determined such that the average deviation of the above-described parameters is the smallest (for example, refer to JP-A-61-44429, etc.). The method of determining each of the above parameters is a known method used in affine transformation or the like, and thus the description thereof is omitted here.

於接下來的步驟S111中,導出用以修正被曝光基板C的應變的應變修正量(dx,dy)。此外,被曝光基板C的應變量是由4個基準標記M1至M4的各偏移量表示。因此,將用以修正該被曝光基板C的應變的應變修正量相對於各個基準標記M1至M4分別表示為(dx0,dy0)至(dx3,dy3)。本實施方式中,將各基準標記M1至M4的應變修正量設為下述殘差(偏移量),即,基於步驟S109中導出的偏位量、伸縮倍率及旋轉量進行修正後之設計上的基準標記M1至M4的位置與所測量的基準標記M1至M4的位置的殘差(偏移量)。 In the next step S111, the strain correction amount (dx, dy) for correcting the strain of the substrate C to be exposed is derived. Further, the amount of strain of the substrate C to be exposed is represented by the respective offset amounts of the four reference marks M1 to M4. Therefore, the strain correction amount for correcting the strain of the exposed substrate C is expressed as (dx0, dy0) to (dx3, dy3) with respect to the respective reference marks M1 to M4, respectively. In the present embodiment, the strain correction amount of each of the reference marks M1 to M4 is the following residual (offset amount), that is, the design based on the amount of deviation, the expansion and contraction magnification, and the amount of rotation derived in step S109. The residual (offset) of the position of the upper reference marks M1 to M4 and the positions of the measured reference marks M1 to M4.

於接下來的步驟S113中,將表示相應於被曝光基板C的應變修正量,而修正上述圖像資訊中的各座標時的調整參數 (Mx,My)(0<Mx<1,0<My<1)的資訊自上述HDD讀出。此外,Mx為x方向的調整參數,My為y方向的調整參數。藉由本實施方式中的調整參數(Mx,My),而決定相對於由被曝光基板C的應變所產生的基準標記M1至M4的偏移的位置對準的程度。本實施方式中,將該調整參數設為使應變修正量減少的比例(以下亦稱為「修正比例」)。即,於調整參數(Mx,My)=(0,0)的情況下,不進行相應於被曝光基板C的應變的修正,於調整參數為(Mx,My)=(1,1)的情況下,不減少修正量而進行相應於被曝光基板C的應變的修正。此外,於調整參數大於0且小於1的情況下,根據調整參數減少應變修正量,並且減少相應於被曝光基板C的應變的修正。 In the next step S113, the adjustment parameter corresponding to the coordinate correction amount of the substrate C to be exposed is corrected while the coordinates in the image information are corrected. Information of (Mx, My) (0 < Mx < 1, 0 < My < 1) is read from the above HDD. In addition, Mx is an adjustment parameter in the x direction, and My is an adjustment parameter in the y direction. The degree of alignment with respect to the offset of the reference marks M1 to M4 caused by the strain of the substrate C to be exposed is determined by the adjustment parameters (Mx, My) in the present embodiment. In the present embodiment, the adjustment parameter is a ratio at which the strain correction amount is reduced (hereinafter also referred to as "correction ratio"). That is, in the case where the adjustment parameter (Mx, My) = (0, 0), the correction corresponding to the strain of the substrate C to be exposed is not performed, and the adjustment parameter is (Mx, My) = (1, 1). Next, the correction corresponding to the strain of the substrate C to be exposed is performed without reducing the correction amount. Further, in the case where the adjustment parameter is greater than 0 and less than 1, the strain correction amount is reduced according to the adjustment parameter, and the correction corresponding to the strain of the substrate C to be exposed is reduced.

本實施方式中,表示該調整參數的資訊由使用者預先經由操作裝置44而輸入,並記憶於上述HDD中。此外,於該步驟S113中,亦可接收表示經由操作裝置44的調整參數的資訊的輸入。此外,本實施方式中,設為0<Mx<1,0<My<1。然而,並不限定於此,亦可包含不進行相應於被曝光基板C的應變的修正的情況、及不減少修正量而進行該修正的情況,設為0≦Mx≦1,0≦My≦1。 In the present embodiment, the information indicating the adjustment parameter is input by the user via the operation device 44 in advance, and is stored in the HDD. Further, in this step S113, an input indicating information indicating an adjustment parameter via the operation device 44 may be received. Further, in the present embodiment, it is assumed that 0 < Mx < 1, and 0 < My < 1. However, the present invention is not limited thereto, and may include a case where correction of the strain corresponding to the substrate C to be exposed is not performed, and a case where the correction is performed without reducing the correction amount, and is set to 0≦Mx≦1, 0≦My≦. 1.

於接下來的步驟S115中,基於步驟S113中讀出的調整參數(Mx,My)而減少被曝光基板C的應變修正量(dx,dy)。此外,本實施方式中,藉由如下(1)式,算出經減少應變修正量(dx,dy)的應變修正量(dx',dy')。 In the next step S115, the strain correction amount (dx, dy) of the substrate C to be exposed is reduced based on the adjustment parameters (Mx, My) read in step S113. Further, in the present embodiment, the strain correction amount (dx', dy') of the reduced strain correction amount (dx, dy) is calculated by the following formula (1).

[數1] (dx,dy)={(dx0,dy0),(dx1,dy1),(dx2,dy2),(dx3,dy3)} dx'=Mx×dx dy'=Mx×dy...(1) [Number 1] ( dx , dy )={( dx 0, dy 0), ( dx 1, dy 1), ( dx 2, dy 2), ( dx 3, dy 3)} dx '= Mx × dx dy '= Mx × dy ...(1)

於接下來的步驟S117中,使用藉由步驟S115的處理所獲得的應變修正量(dx',dy'),將上述圖像資訊中作為座標變換的對象的座標(x1,y1)變換為相應於被曝光基板C的應變而修正的座標(xm,ym)。 In the next step S117, the coordinates (x1, y1) of the object of the coordinate transformation in the image information are converted into corresponding values using the strain correction amount (dx', dy') obtained by the processing of step S115. A coordinate (xm, ym) corrected for the strain of the substrate C to be exposed.

此時,本實施方式中,作為一例如圖10所示,藉由系統控制部40,基於作為座標變換的對象的座標,將由上述圖像資訊所表示的圖像分割成多個(本實施方式中為4個)區域,導出各分割區域的面積SA0至SA3。此處,於進行該分割時,如圖10所示,於由上述圖像資訊表示的圖像中,藉由繪製平行於上述圖像的各邊且通過作為上述變換對象的座標的直線,分割成上述4個區域。本實施方式中,關於各分割區域,分別將圖10的正視左上區域的面積表示為SA0,將右上區域的面積表示為SA1,將左下區域的面積表示為SA2,將右下區域的面積表示為SA3。 At this time, in the present embodiment, as shown in FIG. 10, the system control unit 40 divides the image represented by the image information into a plurality of pieces based on the coordinates of the coordinate conversion target (this embodiment). In the middle of the four regions, the areas SA0 to SA3 of each divided region are derived. Here, when the division is performed, as shown in FIG. 10, in the image represented by the image information, by drawing a line parallel to each side of the image and passing through the coordinates of the transformation target, the division is performed. Into the above four areas. In the present embodiment, the area of the upper left area of the front view of FIG. 10 is represented by SA0, the area of the upper right area is represented by SA1, the area of the lower left area is represented by SA2, and the area of the lower right area is represented by SA3.

此外,系統控制部40是將以此方式獲得的分割區域的面積SA0至SA3、與由步驟S115的處理獲得的應變修正量(dx',dy')代入如下(2)式中。藉此,所獲得的值為上述圖像資訊中作為座標變換的對象的各座標(x1,y1)的應變修正量(ddx,ddy)。 Further, the system control unit 40 substitutes the areas SA0 to SA3 of the divided regions obtained in this way and the strain correction amount (dx', dy') obtained by the processing of step S115 into the following formula (2). Thereby, the obtained value is the strain correction amount (ddx, ddy) of each coordinate (x1, y1) which is the object of the coordinate transformation in the above image information.

例如,如圖10所示,於dx0'=1、dx1'=2、dx2'=5、dx3'=10、SA0=1、SA1=3、SA2=3、SA3=9、SS=16的情況下,ddx=(10×9+5×3+2×3+1×1)/16=7。 For example, as shown in FIG. 10, in the case of dx0'=1, dx1'=2, dx2'=5, dx3'=10, SA0=1, SA1=3, SA2=3, SA3=9, SS=16 Next, ddx = (10 × 9 + 5 × 3 + 2 × 3 + 1 × 1) / 16 = 7.

此外,應變修正量(ddx,ddy)的導出方法並不限定於此。即,於將作為描繪對象的圖像的座標資料中的位置座標設為P(x,y)的情況下,求出相對於基準矩形的各邊的內分比。亦可對修正後的圖像規定對應於該內分比的位置P',將位置P與位置P'的偏移量設定為應變修正量(ddx,ddy)。 Further, the method of deriving the strain correction amount (ddx, ddy) is not limited to this. In other words, when the position coordinates in the coordinate data of the image to be drawn are P(x, y), the internal division ratio with respect to each side of the reference rectangle is obtained. The position P' corresponding to the internal division ratio may be defined for the corrected image, and the offset amount of the position P and the position P' may be set as the strain correction amount (ddx, ddy).

進而,系統控制部40將上述圖像資訊中的各座標的應變修正量(ddx,ddy)、x方向的偏位量ofsx、y方向的偏位量ofsy、x方向的伸縮倍率kx、y方向的伸縮倍率ky、旋轉量θ代入如下(3)式中。藉此,所獲得的值成為基於被曝光基板C的應變修正量而修正各座標(x1,y1)所得的座標(xm,ym)。 Further, the system control unit 40 sets the strain correction amount (ddx, ddy) of each coordinate in the image information, the offset amount ofsx in the x direction, the offset amount ofsy in the y direction, and the expansion and contraction magnification kx and y directions in the x direction. The expansion ratio ky and the rotation amount θ are substituted into the following formula (3). Thereby, the obtained value becomes a coordinate (xm, ym) obtained by correcting each coordinate (x1, y1) based on the strain correction amount of the substrate C to be exposed.

[數3]xm=(kx×x1+ddx)×cos θ-(ky×y1+ddy)×sin θ+ofsx ym=(kx×x1+ddx)×sin θ+(ky×y1+ddy)×cos θ+ofsy...(3) [Number 3] xm = (kx × x 1+ ddx) × cos θ - (ky × y 1+ ddy) × sin θ + ofsx ym = (kx × x 1+ ddx) × sin θ + (ky × y 1 + ddy )×cos θ + ofsy ...(3)

於接下來的步驟S119中,控制平台驅動部42,以使平台12移動至下述位置,即,藉由自曝光部22出射的光束曝光被曝光基板C的上表面的位置。 In the next step S119, the stage driving portion 42 is controlled to move the stage 12 to a position where the position of the upper surface of the exposed substrate C is exposed by the light beam emitted from the exposure portion 22.

於接下來的步驟S121中,以使用由上述步驟S117的處理所獲得的座標(xm,ym),使由上述圖像資訊表示的圖像描繪於被曝光基板C的方式,經由光源單元24及圖像處理單元28來控制曝光頭22a。此時,系統控制部40一面藉由以使平台12按預先規定的速度移動的方式來控制平台驅動部42,而使被曝光基板 C移動,一面以使上述圖像描繪於被曝光基板C的方式來控制曝光頭22a。 In the next step S121, the image represented by the image information is drawn on the substrate C to be exposed by using the coordinates (xm, ym) obtained by the process of the above step S117, via the light source unit 24 and The image processing unit 28 controls the exposure head 22a. At this time, the system control unit 40 controls the stage driving unit 42 so that the stage 12 moves at a predetermined speed to expose the substrate to be exposed. When C moves, the exposure head 22a is controlled such that the image is drawn on the substrate C to be exposed.

於接下來的步驟S123中,移動平台12至被曝光基板C能自平台12卸除的位置,從而結束本曝光控制處理程式的執行。 In the next step S123, the mobile platform 12 is moved to the position where the exposed substrate C can be removed from the platform 12, thereby ending the execution of the exposure control processing program.

例如,於曝光控制處理程式的步驟S113中所讀出的調整參數為0%(Mx=0,My=0)的情況下,即未進行相應於被曝光基板C的應變的修正的情況下,如圖11A所示,無關於被曝光基板C的應變而描繪矩形狀的描繪圖案。 For example, in the case where the adjustment parameter read in step S113 of the exposure control processing program is 0% (Mx=0, My=0), that is, if the correction corresponding to the strain of the substrate C to be exposed is not performed, As shown in FIG. 11A, a rectangular drawing pattern is drawn regardless of the strain of the substrate C to be exposed.

此外,於上述調整參數為50%(一半)的情況下,作為一例,如圖11B所示,將基準標記M的應變修正量設為50%後,基於該應變修正量使描繪圖案變形而進行描繪。 In the case where the adjustment parameter is 50% (half), as an example, as shown in FIG. 11B, after the strain correction amount of the reference mark M is 50%, the drawing pattern is deformed based on the strain correction amount. Depiction.

進而,於上述調整參數為100%(Mx=1,My=1)的情況下,作為一例,如圖11C所示,使用基準標記M的應變修正量本身使圖像變形而進行描繪。於此情況下,由於對應基準標記M1至M4的位置使圖像變形,故而描繪圖案變形為相應於被曝光基板C的應變的形狀而描繪。 Further, when the adjustment parameter is 100% (Mx=1, My=1), as an example, as shown in FIG. 11C, the image is deformed and drawn using the strain correction amount itself of the reference mark M. In this case, since the image is deformed by the position corresponding to the reference marks M1 to M4, the drawing pattern is deformed into a shape corresponding to the strain of the substrate C to be exposed.

此外,例如,如圖12所示,於在被曝光基板C自下位側依序積層多層(例如4層)電路圖案62A至62D而描繪的情況下,於每次各層的描繪結束時進行顯影、蝕刻、剝離等化學處理。進而,為了重疊層,而進行預浸體層的積層、導通孔的加工、填孔(filled via)鍍敷、粗化處理、乾膜光阻(Dry Film photoResist,DFR)的層壓(lamination)等。因此,如圖13所示,設想對於第一層電路圖案62A、第二層電路圖案62B、第三層電路圖案62C、第四層電路圖案62D,每重疊一層,被曝光基板C的應變增大。 Further, for example, as shown in FIG. 12, when the substrate C to be exposed is sequentially formed by stacking a plurality of (for example, four) circuit patterns 62A to 62D from the lower side, development is performed every time the drawing of each layer is completed. Chemical treatment such as etching and peeling. Further, in order to laminate the layers, lamination of the prepreg layer, processing of via holes, filled via plating, roughening treatment, lamination of dry film photoresist (DFR), etc. are performed. . Therefore, as shown in FIG. 13, it is assumed that for each of the first layer circuit pattern 62A, the second layer circuit pattern 62B, the third layer circuit pattern 62C, and the fourth layer circuit pattern 62D, the strain of the exposed substrate C increases. .

此外,於圖11A至圖11C中,於作為描繪對象的電路圖案上,為了使焊盤66與導通孔68的位置關係容易理解,而於作為描繪對象的層的基準標記M的位置設置有焊盤66,於另一層的基準標記M的位置設置有導通孔68。本實施方式中,於描繪電路圖案時,相對於每層,以將導通孔68收容在被曝光基板C的焊盤66的內部的方式,使相應於被曝光基板C的應變的修正的修正量減少。藉此,即便於相應於被曝光基板C的應變而使電路圖案變形的情況下,亦可將電子零件以高精度安裝於基板上。 In addition, in FIG. 11A to FIG. 11C, in order to make the positional relationship of the pad 66 and the via hole 68 easy to understand, the position of the reference mark M of the layer to be drawn is provided in the circuit pattern to be drawn. The disk 66 is provided with a via hole 68 at a position of the reference mark M of the other layer. In the present embodiment, when the circuit pattern is drawn, the correction amount corresponding to the strain of the substrate C to be exposed is corrected so that the via hole 68 is housed inside the pad 66 of the substrate C to be exposed. cut back. Thereby, even when the circuit pattern is deformed in accordance with the strain of the substrate C to be exposed, the electronic component can be mounted on the substrate with high precision.

此外,本實施方式中,藉由對各基準標記M1至M4的應變修正量乘以小於1的值(調整參數(Mx,My)),而使上述應變修正量減少,但並不限定於此。即,亦可藉由以上述應變修正量除以超過1的值、或自上述應變修正量減去預先規定的量,而使上述應變修正量減少。或者,亦可組合多個上述乘算、除算、減算而使上述應變修正量減少。 Further, in the present embodiment, the strain correction amount is reduced by multiplying the strain correction amount of each of the reference marks M1 to M4 by a value smaller than 1 (adjustment parameter (Mx, My)), but the present invention is not limited thereto. . In other words, the strain correction amount may be reduced by dividing the strain correction amount by a value exceeding 1 or by subtracting a predetermined amount from the strain correction amount. Alternatively, the plurality of multiplications, divisions, and subtractions may be combined to reduce the strain correction amount.

進而,於在被曝光基板C積層多個電路圖案而描繪的情況、且在被曝光基板C的最上位層描繪電路圖案的情況下,亦可將應變修正量(dx',dy')設為(0,0)而進行上述(2)式的計算。即,於在多層配線基板的最上位層積載預先規定之形狀(例如矩形狀)的電子零件的情況下,若描繪於最上位的電路圖案的應變修正量較大,則有描繪的電路圖案大幅變形而導致無法安裝該電子零件的可能性。然而,藉由於最上位層中不修正應變,而可避免最上位層的電路圖案的變形,並將該電子零件確實地安裝於被曝光基板C。 Further, when a plurality of circuit patterns are stacked on the exposed substrate C and the circuit pattern is drawn on the uppermost layer of the exposed substrate C, the strain correction amount (dx', dy') may be set to The calculation of the above formula (2) is performed at (0, 0). In other words, when an electronic component having a predetermined shape (for example, a rectangular shape) is stacked on the uppermost layer of the multilayer wiring board, if the strain correction amount of the circuit pattern drawn at the highest position is large, the circuit pattern to be drawn is large. The possibility of deformation that could not install the electronic part. However, since the strain is not corrected in the uppermost layer, the deformation of the circuit pattern of the uppermost layer can be avoided, and the electronic component can be surely mounted on the substrate C to be exposed.

而且,本實施方式中,對將本發明應用於在被曝光基板 C曝光光束而描繪電路圖案的曝光描繪裝置10的情況進行了說明,但並不限定於此。即,可以將本發明應用於任意的描繪裝置,此描繪裝置是用以基於設於被描繪體的基準標記的位置而描繪作為描繪對象的圖像。此外,亦可將本發明應用於用以形成導通孔等的雷射加工裝置及鑽孔加工裝置,上述導通孔用以電性連接描繪電路圖案的各層的層間。此外,亦可應用於用以形成用以保護基板的電路圖案的阻焊層中的零件安裝用孔的曝光裝置及加工裝置。藉此,可以更確實地將電子零件安裝於基板上。 Moreover, in the present embodiment, the present invention is applied to the substrate to be exposed Although the case where the exposure light drawing device 10 which draws a circuit pattern is exposed by C light beam was demonstrated, it is not limited to this. That is, the present invention can be applied to an arbitrary drawing device for drawing an image to be drawn based on the position of the reference mark provided on the object to be drawn. Further, the present invention can also be applied to a laser processing apparatus and a drilling processing apparatus for forming a via hole or the like, and the via hole is electrically connected between layers of each layer in which a circuit pattern is drawn. Further, it can also be applied to an exposure apparatus and a processing apparatus for forming a component mounting hole in a solder resist layer for protecting a circuit pattern of a substrate. Thereby, the electronic component can be mounted on the substrate more reliably.

[第二實施方式] [Second Embodiment]

以下,對本發明的第二實施方式的曝光描繪裝置10進行說明。 Hereinafter, the exposure drawing device 10 according to the second embodiment of the present invention will be described.

第二實施方式的曝光描繪裝置10是與第一實施方式的曝光描繪裝置10同樣地設為圖1至圖6B所示的構成。 The exposure drawing device 10 of the second embodiment is configured as shown in FIGS. 1 to 6B in the same manner as the exposure drawing device 10 of the first embodiment.

第二實施方式的曝光描繪裝置10是於相應於被曝光基板C的應變而進行修正時,對應孔環(annular ring)值而對應變修正量(dx,dy)設置限制。如圖14所示,孔環是包圍於如下所述的環狀區域,即,在焊盤66的內部空出導通孔68的情況下的導通孔68之整周的環狀區域,將焊盤徑設為D、將孔徑設為d的情況下的環狀區域的寬度,即,孔環的寬度L,以L=(D-d)/2表示。 In the exposure drawing device 10 of the second embodiment, when the correction is performed in accordance with the strain of the substrate C to be exposed, the amount of change corresponding to the amount of correction (dx, dy) is set in accordance with the value of the annular ring. As shown in FIG. 14, the hole ring is an annular region surrounding the entire circumference of the via hole 68 in the case where the via hole 68 is left inside the pad 66, and the pad is formed. The width of the annular region in the case where the diameter is D and the aperture is d, that is, the width L of the orifice ring is represented by L = (Dd)/2.

其次,參照圖15,說明本實施方式的曝光描繪裝置10的作用。此外,圖15是表示於經由操作裝置44輸入執行指示時,藉由第二實施方式的曝光描繪裝置10的系統控制部40而執行的曝光控制處理程式的處理流程的流程圖。該程式是預先記憶於系 統控制部40的ROM的預定區域中。此外,對圖15中之與圖8進行相同處理的步驟標附與圖8相同的步驟編號,原則上省略其說明。 Next, the operation of the exposure drawing device 10 of the present embodiment will be described with reference to Fig. 15 . In addition, FIG. 15 is a flowchart showing a flow of a process of the exposure control processing program executed by the system control unit 40 of the exposure drawing device 10 of the second embodiment when an execution instruction is input via the operation device 44. The program is pre-memorized in the system The control unit 40 is in a predetermined area of the ROM. Incidentally, the steps in FIG. 15 that are the same as those in FIG. 8 are denoted by the same step numbers as those in FIG. 8, and the description thereof is omitted in principle.

首先,於步驟S101至步驟S111中,分別進行與第一實施方式的步驟S101至步驟S111同樣的處理。 First, in steps S101 to S111, the same processing as step S101 to step S111 of the first embodiment is performed.

於接下來的步驟S201中,導出孔環的寬度L。本實施方式中,取得表示焊盤66的焊盤徑D及導通孔68的孔徑d的資訊,將焊盤徑D及孔徑d代入如下(4)式中,藉此獲得孔環的寬度L。 In the next step S201, the width L of the aperture ring is derived. In the present embodiment, information indicating the pad diameter D of the pad 66 and the aperture d of the via hole 68 is obtained, and the pad diameter D and the aperture d are substituted into the following equation (4), thereby obtaining the width L of the aperture ring.

此外,焊盤徑D及孔徑d亦可基於電路圖案的設計值,而由使用者經由操作裝置44輸入。此外,孔環的寬度L的導出方法並不限定於此,例如,亦可自連接於外部的資訊處理裝置經由外部輸入輸出部48而輸入,亦可預先記憶於RAM、HDD等記憶構件中。此外,亦可考慮到描繪誤差而將孔環的寬度L設定為比實際小,設置裕度以使導通孔68不會自焊盤66突出。 Further, the pad diameter D and the aperture d may be input by the user via the operating device 44 based on the design value of the circuit pattern. Further, the method of deriving the width L of the eyelet is not limited thereto. For example, the information processing device connected to the outside may be input via the external input/output unit 48, or may be stored in advance in a memory member such as a RAM or an HDD. Further, the width L of the eyelet ring may be set smaller than the actual value in consideration of the drawing error, and the margin may be set so that the via hole 68 does not protrude from the pad 66.

於接下來的步驟S203中,判定由如下(5)式所示的由被曝光基板C的應變所產生的基準標記M1至M4任意偏移量dE是否比孔環的寬度L大。 In the next step S203, it is determined whether or not the arbitrary offset amount dE of the reference marks M1 to M4 caused by the strain of the substrate C to be exposed as shown in the following formula (5) is larger than the width L of the eyelet.

於在步驟S203中判定為基準標記M1至M4的偏移量dE大於孔環的寬度L的情況下,移行至步驟S205,將導通孔68收容至焊盤66,並且以成為儘可能地保持形狀性的應變修正量(dx,dy)的方式限制應變修正量(dx,dy)。如此處理的目的在於,於被曝光基板C以多層來描繪電路圖案時,避免層間的焊盤66與導通孔68的位置偏移,並且儘可能地保持形狀性。本實施方式中,藉由將偏移量dE、孔環的寬度L、上述應變修正量(dx,dy)代入如下(6)式中,而將由步驟S111的處理所導出的應變修正量(dx,dy)修正為應變修正量(dx',dy')。藉此,應變修正量(dx,dy)被修正為於導通孔68收容至焊盤66的內部的範圍內最大的應變修正量(dx',dy')。此外,作為描繪圖案,於描繪表示阻焊層的零件安裝用開口孔的阻焊圖案的情況下,亦可以將開口孔收容至用以與零件接合的導體焊墊的內部的方式來限制應變修正量(dx,dy)。 In the case where it is determined in step S203 that the offset amount dE of the reference marks M1 to M4 is larger than the width L of the eyelet, the process proceeds to step S205, the via hole 68 is housed to the pad 66, and the shape is maintained as much as possible. The amount of strain correction (dx, dy) limits the amount of strain correction (dx, dy). The purpose of such processing is to avoid the positional deviation of the pads 66 and the via holes 68 between the layers when the circuit pattern is drawn in multiple layers on the substrate C to be exposed, and to maintain the shape as much as possible. In the present embodiment, the strain correction amount (dx) derived from the processing of step S111 is substituted by shifting the offset dE, the width L of the orifice ring, and the strain correction amount (dx, dy) into the following equation (6). , dy) is corrected to the strain correction amount (dx', dy'). Thereby, the strain correction amount (dx, dy) is corrected to the maximum strain correction amount (dx', dy') in the range in which the via hole 68 is housed inside the pad 66. Further, when the solder resist pattern indicating the component mounting opening hole of the solder resist layer is drawn as the drawing pattern, the strain correction may be restricted so that the opening hole is housed inside the conductor pad for bonding to the component. Quantity (dx, dy).

另一方面,於在步驟S203中判定為基準標記M1至M4的偏移量dE為小於或等於孔環的寬度L的情況下,移行至步驟S207,對用於修正的應變修正量(dx,dy)不會設置限制。即,使用如下(7)式,將步驟S111中所導出的應變修正量(dx,dy)直接替換為應變修正量(dx',dy')。 On the other hand, if it is determined in step S203 that the offset amount dE of the reference marks M1 to M4 is less than or equal to the width L of the aperture ring, the process proceeds to step S207, and the strain correction amount (dx, for correction) is performed. Dy) does not set a limit. That is, the strain correction amount (dx, dy) derived in step S111 is directly replaced with the strain correction amount (dx', dy') using the following formula (7).

[數7] dx'=dx dy'=dy...(7) [Number 7] dx '= dx dy '= dy ...(7)

於接下來的步驟S117至步驟S123中,分別進行與第一實施方式的步驟S117至步驟S123同樣的處理,而結束本曝光控制處理程式的執行。 In the next steps S117 to S123, the same processing as that of step S117 to step S123 of the first embodiment is performed, and the execution of the exposure control processing program is ended.

例如,於未進行相應於被曝光基板C的應變的修正的情況下,如圖16A所示,無關於被曝光基板C的應變而描繪矩形狀圖像。於此情況下,即便產生被曝光基板C的應變,所描繪的圖像亦不變形,因此未必可將導通孔68收容至焊盤66的內部。此外,與圖11A至圖11C同樣地,於圖16A至圖16C中,亦於作為描繪對象的電路圖案上,為了使焊盤66與導通孔68的位置關係容易理解,而於作為描繪對象的層的基準標記M的位置設置有焊盤66,於另一層的基準標記M的位置設置有導通孔68。 For example, in the case where the correction corresponding to the strain of the substrate C to be exposed is not performed, as shown in FIG. 16A, a rectangular image is drawn regardless of the strain of the substrate C to be exposed. In this case, even if the strain of the substrate C to be exposed occurs, the image to be drawn is not deformed, so that the via hole 68 is not necessarily accommodated inside the pad 66. In addition, as shown in FIG. 11A to FIG. 11C, in the circuit pattern to be drawn, the positional relationship between the pad 66 and the via hole 68 is easily understood, and is used as a drawing target. The pad 66 is provided at the position of the reference mark M of the layer, and the via 68 is provided at the position of the reference mark M of the other layer.

此外,於步驟S207中所導出的孔環的寬度L為預定值(例如20μm),且上述偏移量大於孔環的寬度L的情況下,作為一例,如圖16B所示,減少基準標記M的應變修正量後,基於該應變修正量使圖像變形而進行描繪。此時,如圖17所示,以於焊盤66的內部收容導通孔68的方式,限制相對於應變修正量(dx,dy)的修正量後,相應於被曝光基板C的應變而使圖像變形。藉此,可以將導通孔68收容至焊盤66的內部,且可以將電子零件確實地安裝於被曝光基板C上。 Further, in the case where the width L of the aperture ring derived in step S207 is a predetermined value (for example, 20 μm) and the offset amount is larger than the width L of the aperture ring, as an example, as shown in FIG. 16B, the reference mark M is reduced. After the strain correction amount, the image is deformed based on the strain correction amount and rendered. At this time, as shown in FIG. 17, the correction amount with respect to the strain correction amount (dx, dy) is restricted so that the inside of the pad 66 accommodates the via hole 68, and the strain corresponding to the substrate C to be exposed is caused. Like deformation. Thereby, the via hole 68 can be housed inside the pad 66, and the electronic component can be surely mounted on the exposed substrate C.

進而,於上述孔環的寬度L為預定值(例如20μm),且上述偏移量小於或等於孔環的寬度L的情況下,作為一例,如圖16C所示,使用基準標記M的應變修正量本身使圖像變形而進行 描繪。於此情況下,相應於被曝光基板C的應變而使所描繪的圖像變形,因此可以將導通孔68確實地收容至焊盤66的內部,但於上述應變較大的情況等下,藉由使電子零件的安裝區域變形,未必可以將電子零件安裝於被曝光基板C上。 Further, when the width L of the hole ring is a predetermined value (for example, 20 μm) and the offset amount is less than or equal to the width L of the eyelet ring, as an example, strain correction using the reference mark M is performed as shown in FIG. 16C. The amount itself causes the image to be deformed Depiction. In this case, the image to be drawn is deformed in accordance with the strain of the substrate C to be exposed. Therefore, the via hole 68 can be surely accommodated in the inside of the pad 66. However, when the strain is large, the borrowing is performed. It is not always possible to mount the electronic component on the substrate C to be exposed by deforming the mounting region of the electronic component.

[第三實施方式] [Third embodiment]

以下,對本發明的第三實施方式的曝光描繪裝置10進行說明。 Hereinafter, the exposure drawing device 10 according to the third embodiment of the present invention will be described.

第三實施方式的曝光描繪裝置10是與第一實施方式及第二實施方式的曝光描繪裝置10同樣地設為圖1至圖6B所示的構成。 The exposure drawing device 10 of the third embodiment is configured as shown in FIGS. 1 to 6B in the same manner as the exposure drawing device 10 of the first embodiment and the second embodiment.

第三實施方式的曝光描繪裝置10是於相應於被曝光基板C的應變進行修正時,根據調整參數(Mx,My)減少應變修正量(dx,dy),並且根據孔環的寬度L對應變修正量(dx,dy)設置限制。 The exposure drawing device 10 of the third embodiment reduces the strain correction amount (dx, dy) according to the adjustment parameter (Mx, My) when the strain is corrected corresponding to the strain of the substrate C to be exposed, and changes according to the width L of the aperture ring. The correction amount (dx, dy) sets the limit.

其次,參照圖18,說明本實施方式的曝光描繪裝置10的作用。此外,圖18是表示於經由操作裝置44輸入執行指示時,藉由曝光描繪裝置10的系統控制部40而執行的曝光控制處理程式的處理流程的流程圖。該程式是預先記憶於系統控制部40的ROM的預定區域中。 Next, the operation of the exposure drawing device 10 of the present embodiment will be described with reference to Fig. 18 . In addition, FIG. 18 is a flowchart showing a flow of a process of an exposure control processing program executed by the system control unit 40 of the exposure drawing device 10 when an execution instruction is input via the operation device 44. This program is stored in advance in a predetermined area of the ROM of the system control unit 40.

此外,對圖18中與圖8或圖15進行相同的處理的步驟標附與圖8或圖15相同的步驟編號,原則上省略其說明。 Incidentally, the steps of the same processing as those of FIG. 8 or FIG. 15 in FIG. 18 are denoted by the same step numbers as those in FIG. 8 or FIG. 15, and the description thereof will be omitted in principle.

首先,步驟S101至步驟S113中,分別進行與第一實施方式的步驟S101至步驟S113同樣的處理。於接下來的步驟S201及步驟S203中,進行與第二實施方式的步驟S201及步驟S203同 樣的處理。 First, in steps S101 to S113, the same processing as step S101 to step S113 of the first embodiment is performed. In the next step S201 and step S203, the same as step S201 and step S203 of the second embodiment. Kind of processing.

於在步驟S203中判定為基準標記M1至M4的偏移量dE大於孔環的寬度L的情況下,移行至步驟S301,將導通孔68收容至焊盤66,並且以成為儘可能地保持形狀性的應變修正量(dx,dy)的方式限制應變修正量(dx,dy)。本實施方式中,藉由將應變修正量(dx,dy)、偏移量dE、孔環的寬度L及步驟S113中所讀出的調整參數(Mx,My)代入如下(8)式中,將步驟S111中所導出的應變修正量(dx,dy)修正為應變修正量(dx',dy')。藉此,應變修正量(dx,dy)被修正為導通孔68收容至焊盤66的內部、且形狀性經調整的應變修正量(dx',dy')。 In the case where it is determined in step S203 that the offset amount dE of the reference marks M1 to M4 is larger than the width L of the eyelet, the process proceeds to step S301, the via hole 68 is housed to the pad 66, and the shape is maintained as much as possible. The amount of strain correction (dx, dy) limits the amount of strain correction (dx, dy). In the present embodiment, the strain correction amount (dx, dy), the offset amount dE, the width L of the orifice ring, and the adjustment parameter (Mx, My) read in the step S113 are substituted into the following formula (8). The strain correction amount (dx, dy) derived in step S111 is corrected to the strain correction amount (dx', dy'). Thereby, the strain correction amount (dx, dy) is corrected to the shape-adjusted strain correction amount (dx', dy') in which the via hole 68 is housed inside the pad 66.

另一方面,於在步驟S203中判定為基準標記M1至M4的偏移量dE為小於或等於孔環的寬度L的情況下,移行至步驟S303,對用於修正的應變修正量(dx,dy)不會設置限制。即,將步驟S113中所讀出的調整參數(Mx,My)代入如下(9)式中,而將步驟S111中所導出的應變修正量(dx,dy)修正為應變修正量(dx',dy')。 On the other hand, if it is determined in step S203 that the offset amount dE of the reference marks M1 to M4 is less than or equal to the width L of the aperture ring, the process proceeds to step S303, and the strain correction amount (dx, for correction) is performed. Dy) does not set a limit. That is, the adjustment parameter (Mx, My) read in step S113 is substituted into the following formula (9), and the strain correction amount (dx, dy) derived in step S111 is corrected to the strain correction amount (dx', Dy').

[數9]dx'=Mx×dx dy'=My×dy...(9) [Number 9] dx '= Mx × dx dy '= My × dy ...(9)

於接下來的步驟S117至步驟S123中,分別進行與第一 實施方式的步驟S117至步驟S123同樣的處理,而結束本曝光控制處理程式的執行。 In the next step S117 to step S123, respectively, and the first The same processing as step S117 to step S123 of the embodiment ends the execution of the exposure control processing program.

[第四實施方式] [Fourth embodiment]

以下,對本發明的第四實施方式的曝光描繪裝置10進行說明。 Hereinafter, the exposure drawing device 10 of the fourth embodiment of the present invention will be described.

第四實施方式的曝光描繪裝置10是與第一實施方式至第三實施方式的曝光描繪裝置10同樣地設為圖1至圖6B所示的構成。 The exposure drawing device 10 of the fourth embodiment is configured as shown in FIGS. 1 to 6B in the same manner as the exposure drawing device 10 of the first to third embodiments.

第一實施方式至第三實施方式的曝光描繪裝置10是於1個對象區域64中,基於4個基準標記M1至M4,進行相應於被曝光基板C的應變的座標變換。另一方面,第四實施方式的曝光描繪裝置10是對多個對象區域64,分別基於不同的基準標記M,進行相應於被曝光基板C的應變的座標變換。 The exposure drawing device 10 of the first embodiment to the third embodiment performs coordinate conversion corresponding to the strain of the substrate C to be exposed based on the four reference marks M1 to M4 in one target region 64. On the other hand, the exposure drawing device 10 of the fourth embodiment performs coordinate conversion on the strain corresponding to the substrate C to be exposed based on the different reference marks M for the plurality of target regions 64.

例如,如圖19A所示,上述多個對象區域64可以作為將由圖像資訊表示的圖像分割成多個(例如4個)區域而成的各個區域。此外,於分割上述圖像時,以如下方式進行分割:以排列成格子狀的方式所設置的基準標記M中之排列成兩列兩行的4個基準標記M包含於各分割區域中。 For example, as shown in FIG. 19A, the plurality of target regions 64 may be used as each region in which an image represented by image information is divided into a plurality of (for example, four) regions. Further, when dividing the image, the division is performed in such a manner that four reference marks M arranged in two rows and two rows in the reference mark M provided in a lattice pattern are included in each divided region.

或者,如圖19B所示,亦可於將上述圖像的外周部設為非對象區域後,將自上述圖像去除非對象區域後的區域分割成多個(例如4個)區域而成的區域設為對象區域64。此外,於分割上述圖像時,以如下方式進行分割:由以排列成矩陣狀的方式所設置的基準標記M中之排列成兩列兩行的4個基準標記M包圍的區域,作為各分割區域。 Alternatively, as shown in FIG. 19B, after the outer peripheral portion of the image is set as a non-target region, the region obtained by removing the non-target region from the image may be divided into a plurality of (for example, four) regions. The area is set to the object area 64. Further, when dividing the image, the division is performed by dividing the area surrounded by the four reference marks M arranged in two rows and two rows in the reference mark M arranged in a matrix form as each division. region.

或者,如圖19C所示,亦可提取多個上述圖像中的部分區域(例如4個),將所提取的各個區域設為對象區域64。此外,可以如下方式提取上述各個部分區域:各對象區域64的角部分別位於,以排列成矩陣狀的方式所設置的基準標記M中之排列成兩列兩行的4個基準標記M的每一個附近。 Alternatively, as shown in FIG. 19C, a part of the plurality of images (for example, four) may be extracted, and each of the extracted regions may be the target region 64. Further, each of the partial regions may be extracted in such a manner that the corner portions of the respective target regions 64 are located, respectively, in each of the four reference marks M arranged in two rows and two rows in the fiducial mark M arranged in a matrix. One nearby.

或者,如圖20A所示,上述多個對象區域64亦可設為將由圖像資訊表示的圖像分割成多個(例如4個)區域而成的各個區域。此外,以上述多個對象區域64的各者包含排列成兩列兩行的4個基準標記M的方式進行分割。 Alternatively, as shown in FIG. 20A, the plurality of target regions 64 may be formed as a region in which an image represented by image information is divided into a plurality of (for example, four) regions. Further, each of the plurality of target regions 64 is divided so as to include four reference marks M arranged in two rows and two rows.

或者,如圖20B所示,亦可於將上述圖像的外周部設為非對象區域後,將自上述圖像去除非對象區域後的區域分割成多個(例如4個)區域而成的區域,設為對象區域64。此外,以上述多個對象區域64的各者包含排列成兩列兩行的4個基準標記M的方式進行分割。 Alternatively, as shown in FIG. 20B, after the outer peripheral portion of the image is set as a non-target region, the region obtained by removing the non-target region from the image may be divided into a plurality of (for example, four) regions. The area is set as the object area 64. Further, each of the plurality of target regions 64 is divided so as to include four reference marks M arranged in two rows and two rows.

或者,如圖20C所示,亦可提取多個上述圖像中的部分區域(例如4個),將所提取的各個區域設為對象區域64。此外,根據各對象區域64的形狀或大小,而於各對象區域64的內部或各對象區域64的外周附近形成排列成兩列兩行的4個基準標記M。 Alternatively, as shown in FIG. 20C, a part of the plurality of images (for example, four) may be extracted, and each of the extracted regions may be the target region 64. Further, four reference marks M arranged in two rows and two rows are formed in the interior of each of the target regions 64 or in the vicinity of the outer periphery of each of the target regions 64 in accordance with the shape or size of each of the target regions 64.

其次,參照圖21,說明本實施方式的曝光描繪裝置10的作用。此外,圖21是表示於經由操作裝置44輸入執行指示時,藉由曝光描繪裝置10的系統控制部40而執行的曝光控制處理程式的處理流程的流程圖。該程式是預先記憶於系統控制部40的ROM的預定區域中。 Next, the operation of the exposure drawing device 10 of the present embodiment will be described with reference to Fig. 21 . In addition, FIG. 21 is a flowchart showing a flow of a process of an exposure control processing program executed by the system control unit 40 of the exposure drawing device 10 when an execution instruction is input via the operation device 44. This program is stored in advance in a predetermined area of the ROM of the system control unit 40.

此外,對圖21中與圖8進行相同的處理的步驟標附與圖8相同的步驟編號,原則上省略其說明。 Incidentally, the steps of the same processing as those of FIG. 8 in FIG. 21 are denoted by the same step numbers as those in FIG. 8, and the description thereof will be omitted in principle.

首先,步驟S101至步驟S107中,分別進行與第一實施方式的步驟S101至步驟S107同樣的處理。 First, in steps S101 to S107, the same processing as steps S101 to S107 of the first embodiment is performed.

於接下來的步驟S401中,對與多個對象區域64中的1個對象區域64對應的基準標記M,以與步驟S109同樣的方法導出被曝光基板C的旋轉量、偏位量、伸縮倍率。 In the next step S401, the reference mark M corresponding to one of the plurality of target regions 64 is used to derive the amount of rotation, the amount of deviation, and the expansion ratio of the substrate C to be exposed in the same manner as in step S109. .

於接下來的步驟S111至步驟S117中,分別進行與第一實施方式的步驟S111至步驟S117同樣的處理。 In the next step S111 to step S117, the same processing as step S111 to step S117 of the first embodiment is performed.

於接下來的步驟S403中,對與多個對象區域64中的所有對象區域64對應的基準標記M,判定是否進行步驟S117中的座標變換。於在步驟S117中為否定判定的情況下,返回至步驟S401。 In the next step S403, it is determined whether or not the coordinate conversion in step S117 is performed on the reference mark M corresponding to all the target regions 64 in the plurality of target regions 64. If the determination is negative in step S117, the process returns to step S401.

另一方面,於在步驟S403中為肯定判定的情況下,移行至步驟S119。於步驟S119至步驟S123中,分別進行與第一實施方式的步驟S119至步驟S123同樣的處理,而結束本曝光控制處理程式的執行。 On the other hand, in the case of affirmative determination in step S403, the process proceeds to step S119. In steps S119 to S123, the same processes as steps S119 to S123 of the first embodiment are performed, and the execution of the exposure control processing program is ended.

此外,於使描繪於被曝光基板C中的多個區域的各者的電路圖案變形的情況下,亦可以鄰接的區域間所描繪的電路圖案不重疊的方式,藉由平行移動或旋轉移動而調整電路圖案的描繪區域。 Further, when the circuit pattern of each of the plurality of regions drawn on the substrate C to be exposed is deformed, the circuit patterns drawn between the adjacent regions may be overlapped or rotated by the parallel or rotational movement. Adjust the drawing area of the circuit pattern.

此外,第四實施方式是將如下構成應用於第一實施方式的實施方式,即,於被曝光基板C中的多個區域的各者描繪電路圖案,並且於多個區域的各者減少應變修正量的構成,但應用上 述構成的實施方式並不限定於此。即,亦可將第四實施方式的構成應用於第二實施方式或第三實施方式。 Further, the fourth embodiment is a configuration in which the following configuration is applied to each of the plurality of regions in the substrate C to be exposed, and the strain correction is reduced for each of the plurality of regions. Quantitative composition, but applied The embodiment of the configuration is not limited to this. That is, the configuration of the fourth embodiment can be applied to the second embodiment or the third embodiment.

關於日本專利申請案2012-1779935號的揭示,其全文通過引用而併入至本說明書中。 The disclosure of Japanese Patent Application No. 2012-1779935 is incorporated herein by reference in its entirety.

本說明書中所記載的所有文獻、專利申請案以及技術標準是與具體且逐一記載藉由參照引用各個文獻、專利申請案以及技術標準的情況程度相同地藉由參照併入本說明書中。 All documents, patent applications, and technical standards described in the specification are incorporated in the specification as the

S101~S123‧‧‧步驟 S101~S123‧‧‧Steps

Claims (11)

一種描繪裝置,包括:取得構件,取得表示第一位置的座標資料、表示描繪圖案的座標資料以及表示第二位置的座標資料,其中上述第一位置為設於被曝光基板的多個基準標記的設計上的位置,上述描繪圖案描繪於以上述第一位置為基準而規定的上述被曝光基板,上述第二位置為上述多個基準標記各自的實際位置;導出構件,針對每一上述多個基準標記,導出用以修正上述第一位置與上述第二位置的偏移的偏移修正量;減少構件,按預先規定的比例減少由上述導出構件導出的每一偏移修正量;以及修正構件,於以表示上述第二位置的座標資料為基準而於上述被曝光基板描繪上述描繪圖案的情況下,基於經上述減少構件減少的偏移修正量而修正表示上述描繪圖案的座標資料。 A drawing device includes: an acquisition member that acquires coordinate data indicating a first position, coordinate data indicating a drawing pattern, and coordinate data indicating a second position, wherein the first position is a plurality of reference marks provided on the substrate to be exposed In the design position, the drawing pattern is drawn on the exposed substrate defined by the first position, the second position is an actual position of each of the plurality of reference marks, and the deriving means is for each of the plurality of references Marking, deriving an offset correction amount for correcting an offset between the first position and the second position; reducing a component, reducing each offset correction amount derived by the deriving member by a predetermined ratio; and correcting the component, When the drawing pattern is drawn on the exposed substrate with reference to the coordinate data indicating the second position, the coordinate data indicating the drawing pattern is corrected based on the offset correction amount reduced by the reducing member. 如申請專利範圍第1項所述的描繪裝置,其中上述減少構件是藉由進行下者中的至少一者,而按預先規定的比例減少上述導出的每一偏移修正量,即:以上述偏移修正量乘以小於1的值、以上述偏移修正量除以大於1的值、以及自上述偏移修正量減去預先規定的量。 The drawing device according to claim 1, wherein the reducing member reduces each of the derived offset correction amounts by a predetermined ratio by performing at least one of the following, that is, by the above The offset correction amount is multiplied by a value smaller than 1, the offset correction amount is divided by a value larger than 1, and a predetermined amount is subtracted from the offset correction amount. 如申請專利範圍第1項或第2項所述的描繪裝置,其中上述描繪圖案是表示電子配線的電路圖案,上述比例是以於上述描繪圖案的焊盤的內部收容導通孔的方式規定的比例。 The drawing device according to the first or second aspect of the invention, wherein the drawing pattern is a circuit pattern indicating an electronic wiring, and the ratio is a ratio defined by a method of accommodating a via hole in a pad of the drawing pattern. . 如申請專利範圍第1項或第2項所述的描繪裝置,其中 上述描繪圖案是表示阻焊層的零件安裝用的開口孔的阻焊圖案,上述比例是以將上述開口孔收納於用以與零件接合的導體焊墊的內部的方式規定的比例。 A drawing device as described in claim 1 or 2, wherein The drawing pattern is a solder resist pattern indicating an opening hole for mounting a component of the solder resist layer, and the ratio is a ratio defined by accommodating the opening hole in the inside of the conductor pad to be bonded to the component. 如申請專利範圍第1項或第2項所述的描繪裝置,其中上述導出構件是自將上述被曝光基板的平行移動所致的偏移、旋轉所致的偏移、以及伸縮所致的偏移中的至少一者去除所得的偏移量,而導出上述偏移修正量。 The drawing device according to claim 1 or 2, wherein the deriving member is an offset caused by parallel movement of the exposed substrate, a shift due to rotation, and a bias caused by expansion and contraction. At least one of the shifts removes the resulting offset and derives the offset correction. 如申請專利範圍第1項或第2項所述的描繪裝置,其中上述描繪圖案是描繪於上述被曝光基板的多個區域的各者,上述基準標記是設於描繪有上述描繪圖案的上述多個區域的各者,上述減少構件是針對每一上述多個區域,減少每一上述偏移修正量。 The drawing device according to claim 1 or 2, wherein the drawing pattern is each of a plurality of regions drawn on the substrate to be exposed, and the reference mark is provided on the plurality of the drawing patterns. Each of the plurality of regions, the reducing member is configured to reduce each of the offset correction amounts for each of the plurality of regions. 如申請專利範圍第1項或第2項所述的描繪裝置,更包括:接收構件,接收調整參數的輸入,上述調整參數是用以減少由上述導出構件導出的每一上述偏移修正量,且上述減少構件是基於經上述接收構件接收的調整參數而算出上述比例。 The drawing device according to claim 1 or 2, further comprising: a receiving member that receives an input of an adjustment parameter, wherein the adjustment parameter is used to reduce each of the offset correction amounts derived by the deriving member, And the reducing member calculates the ratio based on the adjustment parameter received by the receiving member. 如申請專利範圍第1項或第2項所述的描繪裝置,其中上述導出構件於在上述被曝光基板積層多個描繪圖案而進行描繪的情況,且於上述被曝光基板的最上位層描繪描繪圖案的情況下,將上述偏移修正量設為0。 The drawing device according to claim 1 or 2, wherein the deriving member draws a plurality of drawing patterns on the exposed substrate, and draws and draws on an uppermost layer of the exposed substrate. In the case of a pattern, the offset correction amount described above is set to zero. 一種曝光描繪裝置,包括: 如申請專利範圍第1項或第2項所述的描繪裝置;以及曝光構件,基於經上述描繪裝置的上述修正構件修正的座標資料,於上述被曝光基板曝光上述描繪圖案而進行描繪。 An exposure drawing device comprising: The drawing device according to the first or second aspect of the invention, wherein the exposure member exposes the drawing pattern on the exposed substrate based on the coordinate data corrected by the correction member of the drawing device. 一種描繪方法,包括:(a)取得表示第一位置的座標資料、表示描繪圖案的座標資料以及表示第二位置的座標資料,其中上述第一位置為設於被曝光基板的多個基準標記的設計上的位置,上述描繪圖案描繪於以上述第一位置為基準而規定的上述被曝光基板,上述第二位置為上述多個基準標記各自實際的位置;(b)針對每一上述多個基準標記,導出用以修正上述第一位置與上述第二位置的偏移的偏移修正量;(c)按預先規定的比例減少由上述(b)導出的每一偏移修正量;(d)於以表示上述第二位置的座標資料為基準而於上述被曝光基板描繪上述描繪圖案的情況下,基於經上述減少步驟減少的偏移修正量而修正表示上述描繪圖案的座標資料。 A drawing method includes: (a) acquiring coordinate data indicating a first position, coordinate data indicating a drawing pattern, and coordinate data indicating a second position, wherein the first position is a plurality of reference marks provided on the substrate to be exposed In the design position, the drawing pattern is drawn on the exposed substrate defined by the first position, wherein the second position is an actual position of each of the plurality of reference marks; and (b) for each of the plurality of references Marking, deriving an offset correction amount for correcting an offset of the first position and the second position; (c) reducing each offset correction amount derived by the above (b) by a predetermined ratio; (d) When the drawing pattern is drawn on the exposed substrate with reference to the coordinate data indicating the second position, the coordinate data indicating the drawing pattern is corrected based on the offset correction amount reduced by the reducing step. 一種記錄媒體,其是記憶有用以使電腦執行描繪程序的程式的電腦可讀取記錄媒體,且上述描繪程序包括:(a)取得表示第一位置的座標資料、表示描繪圖案的座標資料以及表示第二位置的座標資料,其中上述第一位置為設於被曝光基板的多個基準標記的設計上的位置,上述描繪圖案描繪於以上述第一位置為基準而規定的上述被曝光基板,上述第二位置為上述多個基準標記各自的實際的位置; (b)針對每一上述多個基準標記,導出用以修正上述第一位置與上述第二位置的偏移的偏移修正量;(c)按預先規定的比例減少由上述(b)導出的每一偏移修正量;(d)於以表示上述第二位置的座標資料為基準而於上述被曝光基板描繪上述描繪圖案的情況下,基於經上述減少構件減少的偏移修正量而修正表示上述描繪圖案的座標資料。 A recording medium, which is a computer readable recording medium for storing a program for causing a computer to execute a drawing program, and the drawing program includes: (a) acquiring coordinate data indicating a first position, coordinate data indicating a drawing pattern, and expressing The coordinate data of the second position, wherein the first position is a design position of the plurality of reference marks provided on the substrate to be exposed, and the drawing pattern is drawn on the exposed substrate defined by the first position, wherein The second position is an actual position of each of the plurality of reference marks; (b) deriving an offset correction amount for correcting the offset of the first position and the second position for each of the plurality of reference marks; (c) reducing the amount derived from the above (b) by a predetermined ratio (d) in the case where the drawing pattern is drawn on the exposed substrate with reference to the coordinate data indicating the second position, based on the offset correction amount reduced by the reducing member The above-mentioned coordinate data of the pattern is drawn.
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