TW201405695A - Substrate processing device - Google Patents

Abstract

The invention relates to a substrate processing device. The substrate processing device disclosed in the embodiment of the invention includes: a chamber with a cavity; a body in the chamber for placing a substrate, wherein the top surface of the body and the substrate bend in opposite directions; a vacuum part in the chamber for absorbing the substrate and the top surface of body; and a heating part in the body for heating the substrate.

Description

Substrate processing device

The present invention relates to a substrate processing apparatus.

Usually, each wafer can form tens or hundreds of wafers on average. However, such an article is not only unable to receive power from the outside but also receives telecommunications, and it is easy to external due to the built-in fine circuit. Damaged by rushing. Therefore, the packaging technology that electrically connects the wafer and protects it from external rushing is rapidly developed.

In recent years, the high integration of semiconductor devices, the increase in memory capacity, the need for multi-function and high-density mounting have been rapidly increasing, and in order to meet these requirements, wire bonding has been performed. The structure is expanded to a joint structure using a Flip Chip Bump; among these, a structure having a high level function is realized, and bumps are formed on the substrate in order to improve assembly yield.

On the other hand, when the semiconductor package member is lighter and thinner, the thermal expansion coefficient between the layers constituting the substrate is poor, and warpage or the like is generated when the substrate is heated. When a substrate warpage phenomenon like this occurs, the semiconductor wafer mounted on the substrate is embossed and a bump of a uniform size cannot be formed, so that there is a problem that an electrical connection error occurs between the semiconductor wafer and the substrate.

In order to solve such a problem, various methods of correcting a deformed substrate, etc., as disclosed in U.S. Patent No. 20070181644, have been developed.

An object of the present invention is to provide a substrate processing apparatus capable of correcting warpage of a substrate.

According to an embodiment of the present invention, a substrate processing apparatus may be provided, including: a chamber in which a cavity is formed; a cavity in the cavity, and a top surface and the substrate a body in which an opposite direction is formed; a vacuum portion formed inside the body and adsorbing the substrate on a top surface of the body; and a heating portion formed inside the body to heat the substrate.

The top surface of the aforementioned body may be concave.

The top surface of the body may be convex.

The vacuum portion may include: a vacuum generating portion for generating a vacuum; and a vacuum line formed to penetrate the top surface of the body, coupled to the vacuum generating portion, and adsorbing the substrate to an upper portion of the body .

The heating unit can heat the substrate to a glass transition temperature (Tg) of the insulating material or the solder resist.

The method further includes: a cooling portion located in the cavity and cooling the heated substrate.

The cooling portion may be formed separately from the body Around the aforementioned body.

The cooling unit may be configured to cool the substrate by using a cooling gas.

The aforementioned cooling gas may contain nitrogen or argon.

The cooling unit can cool the heated substrate to room temperature.

According to the substrate processing apparatus of the embodiment of the present invention, the warpage of the substrate can be effectively corrected by using the body formed in a direction opposite to the warpage direction of the substrate.

100‧‧‧Substrate processing unit

110‧‧‧ chamber

111‧‧‧ Cavity

120‧‧‧ body

130‧‧‧vacuum

131‧‧‧ Vacuum Generation Department

132‧‧‧vacuum pipeline

140‧‧‧heating department

150‧‧‧The Ministry of Cooling

200‧‧‧Substrate

1 is a diagram related to a substrate processing apparatus in accordance with an embodiment of the present invention.

2 is a view showing an example of a procedure for correcting warpage of a substrate in a substrate processing apparatus according to an embodiment of the present invention.

3 is a view showing an example of a procedure for correcting warpage of a substrate in a substrate processing apparatus according to an embodiment of the present invention.

4 is a view showing an example of a procedure for correcting warpage of a substrate in a substrate processing apparatus according to an embodiment of the present invention.

Fig. 5 is a view showing an example of a procedure for correcting warpage of a substrate in a substrate processing apparatus according to an embodiment of the present invention.

(to implement the best aspect of the invention)

The object, specific advantages and novel features of the present invention can be The following detailed description and preferred embodiments of the invention will be apparent. In this specification, when a reference number is attached to each component of each drawing, as long as it is the same component, even if it is displayed on a different drawing, the same number is attached as much as possible. Please pay attention to this point. In addition, terms such as "one side", "other side", "first", and "second" are used to distinguish one component from another, but the components are not limited by the above terms. . In the following, in the description of the present invention, detailed descriptions of known related art that have the possibility of causing the gist of the present invention are omitted.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a substrate processing apparatus relating to an embodiment of the present invention.

Referring to FIG. 1 , the substrate processing apparatus 100 may include a chamber 110 , a body 120 , a vacuum unit 130 , a heating unit 140 , and a cooling unit 150 .

The substrate processing apparatus 100 is a device for correcting warpage of a substrate (not shown) caused by a process of forming a bump or a circuit. According to the embodiment of the present invention, the substrate processing apparatus 100 can correct the warpage of the substrate (not shown) by vacuum-adhering and fixing the substrate (not shown), followed by heating and cooling.

The chamber 110 can provide an environment that corrects the warpage of the substrate (not shown). The chamber 110 is formed in a form in which a cavity 111 is formed inside and can be sealed. In the cavity 111 formed inside the chamber 110, the body 120 for warping of the substrate (not shown), the vacuum portion 130, the heating portion 140, and the cooling portion 150 can be placed.

A substrate (not shown) may be mounted on the body 120. Placing the substrate The top surface of the body 120 (not shown) may be formed in a direction opposite to a substrate (not shown). In an embodiment of the invention, the top surface of the body 120 may be concave. However, the form of the top surface of the body 120 is not limited to this. For example, in the case where the substrate (not shown) is warped into a concave shape, the top surface of the body 120 may be convex. Alternatively, in a case where the substrate (not shown) is warped into a convex shape, the top surface of the body 120 may be formed in a concave shape. That is, the shape of the top surface of the body 120 may depend on the warping direction of the substrate (not shown), and those skilled in the art can easily adapt the application.

The vacuum unit 130 can adsorb a substrate (not shown) attached to the top surface of the main body 120 to the top surface of the main body 120.

The vacuum portion 130 may include a vacuum generating portion 131 and a vacuum line 132.

The vacuum generating portion 131 can supply a vacuum pressure to the vacuum line 132. The vacuum generating portion 131 may be formed inside the body 120. However, the position at which the vacuum generating portion 131 is formed is not limited and can be easily changed by those skilled in the art.

A vacuum line 132 may be formed inside the body 120. Also, the vacuum line 132 can be formed in a manner that penetrates the top surface of the body 120. One side of the vacuum line 132 may extend through the top surface of the body 120, and the other side of the vacuum line 132 may be coupled to the vacuum generating portion 131. The vacuum line 132 can serve as a passage through which the vacuum pressure generated in the vacuum generating portion 131 passes. In other words, the vacuum pressure generated by the vacuum generating unit 131 is applied to the substrate (not shown) through the vacuum line 132, so that the substrate (not shown) can be adsorbed and fixed to the top surface of the main body 120.

The heating portion 140 may be formed inside the body 120. Heating department The substrate 140 (not shown) that is adsorbed and fixed to the top surface of the main body 120 can be heated. That is, the heating unit 140 can heat the substrate (not shown) to remove the warpage of the substrate (not shown) that is adsorbed and fixed to the top surface of the main body 120. For example, the heating portion 140 may be formed by a heater.

The cooling portion 150 may be located within the cavity 111 formed in the chamber 110. The cooling portion 150 may be formed separately from the body 120 and may be located around the body 120. According to an embodiment of the present invention, the cooling portion 150 may be formed at an upper portion of the body 120. However, the number and position of the cooling portion 150 are not limited, and it can be easily changed by those skilled in the art. The cooling unit 150 can cool the substrate (not shown) heated by the heating unit 140. The cooling unit 150 can cool the substrate (not shown) using a cooling gas. The cooling unit 150 can cool the substrate (not shown) to a temperature close to room temperature using a cooling gas. The cooling gas used for cooling the substrate (not shown) can be used to suppress oxidation of solder bumps formed on a substrate (not shown). For example, the cooling gas may also contain an inert gas of nitrogen or argon.

According to an embodiment of the present invention, the substrate may be adsorbed and fixed on the top surface of the body 120 processed in a direction opposite to the warping direction of the substrate (not shown) generated at room temperature, and removed for removal. The warp is heated and cooled to room temperature to correct the warpage of the substrate (not shown).

2 to 5 are views showing an example of a procedure for correcting warpage of a substrate in a substrate processing apparatus according to an embodiment of the present invention.

Referring to FIG. 2, the substrate processing apparatus 100 may be mounted with a substrate 200.

The substrate processing apparatus 100 may include a chamber 110, a body 120, a vacuum portion 130, a heating portion 140, and a cooling portion 150.

The chamber 110 may be internally formed with a cavity 111 and formed in a sealed form.

In the body 120, a substrate 200 on which warpage has been generated may be mounted. The top surface of the body 120 at the position where the substrate 200 is located may be formed in a direction opposite to the substrate 200. In an embodiment of the invention, the top surface of the body 120 may be concave.

As shown in FIG. 2, the substrate 200 on which bumps or circuits are formed may be mounted on the top surface of the body 120. The substrate 200 may also be in a state of being warped due to most of the previous processes. For example, the substrate 200 may also be one having a property of causing a convex warp at room temperature. That is, the substrate 200 which is convexly warped at room temperature can be mounted on the body 120 having the concave top surface.

Referring to FIG. 3, the substrate processing apparatus 100 can perform warpage correction on the substrate 200.

The substrate 200 mounted on the top surface of the body 120 can be adsorbed and fixed by the vacuum portion 130.

The vacuum portion 130 may include a vacuum generating portion 131 and a vacuum line 132. The vacuum generating portion 131 and the vacuum line 132 may be formed inside the body 120. Also, the vacuum line 132 may be formed to penetrate the top surface of the body 120. One side of the vacuum line 132 may extend through the top surface of the body 120, and the other side of the vacuum line 132 may be coupled to the vacuum generating portion 131. According to an embodiment of the present invention, the vacuum pressure generated in the vacuum generating portion 131 can be transmitted through the vacuum line 132 to adsorb and fix the substrate 200 on the top surface of the body 120. At this time, the substrate 200 can be fixed to the top surface of the body 120 in a corresponding manner. That is, the substrate 200 can be on the body 120 via the concave top surface of the body 120. It is fixed in a concave shape.

The substrate 200 fixed to the concave shape on the top surface of the body 120 by the vacuum portion 130 can be heated via the heating portion 140. Here, the heating portion 140 may be formed inside the body 120. The heating unit 140 can heat the substrate 200 to a temperature equal to or higher than a glass transition temperature (Tg) such as an insulating material of the substrate 200 or a solder resist. For example, the heating portion 140 can heat the substrate 200 to 150 ° C or higher. The matters relating to the heating temperature of the heating portion 140 will be described later with reference to Fig. 4 .

The substrate 200 heated by the heating unit 140 can be cooled by the cooling unit 150. In the embodiment of the present invention, the cooling portion 150 may be formed in such a manner as to be fixed to the inner wall of the upper portion of the chamber 110. The cooling unit 150 can cool the substrate 200 heated via the heating unit 140 using a cooling gas. At this time, the cooling unit 150 can cool the substrate 200 to a temperature close to room temperature. As the cooling gas used when cooling the substrate 200, a type that can suppress oxidation of solder bumps or the like formed on the substrate 200 can be used. For example, the cooling gas may also be an inert gas containing nitrogen or argon.

When referring to FIG. 4, it can be confirmed that the warpage-producing substrate 200 improves the degree of warpage with the heating temperature.

In order to confirm the degree of warpage of the substrate 200 in accordance with an embodiment of the present invention, first, the substrate 200 is heated at a heating temperature of 50 ° C, 100 ° C, 150 ° C, 200 ° C, and 220 ° C for 1 minute. After the substrate 200 is heated, the heated substrate 200 is cooled using a cooling gas. At this time, the temperature of the cooling gas was maintained at 15 °C. Further, the cooling gas is nitrogen. After the substrate 200 is subjected to a warpage improvement process like this, when it is associated with the initial substrate 200 When the degree of warpage is compared and the degree of warpage of the substrate 200 is improved, it is possible to confirm such a curve as shown in FIG. When FIG. 4 was confirmed, it was confirmed that when the substrate 200 was heated at a heating temperature of 150 ° C or higher, the warpage of the substrate 200 was greatly improved. Here, 150 ° C which greatly improves warpage occurs, which is a temperature close to a glass transition temperature (Tg) of an insulating material or a solder resist formed on the substrate 200. That is, when the substrate 200 is heated to a temperature higher than the glass transition temperature (Tg) of the insulating material or the solder resist, the degree of warpage can be improved. Therefore, in order to improve the warpage of the substrate 200 upward, the heating portion 140 of the substrate processing apparatus 100 according to the embodiment of the present invention can heat the substrate 200 at a heating temperature of 150 ° C or higher.

Referring to Fig. 5, it was confirmed that a substrate having improved warpage (200 in Fig. 3) was obtained after cooling to room temperature.

The substrate processing apparatus (100 of FIG. 3) can be fixed to the substrate 200 which is convexly warped at room temperature, and heated. The substrate 200, which is fixed in a concave shape and heated, can be cooled again to room temperature by a substrate processing apparatus (100 of FIG. 3). When the substrate 200 thus fixed in a concave shape is cooled to room temperature, it may be warped to be convex at room temperature. That is, the substrate 200 whose center is warped downward is warped upward, and as a result, the warpage of the substrate 200 can be removed, so that the substrate 200 can be flat.

According to the substrate processing apparatus of the embodiment of the present invention, since the body formed in a form opposite to the warpage direction of the substrate is used, the warpage of the substrate can be effectively corrected.

The present invention has been described in detail above based on the specific embodiments, but the present invention is specifically described, and the present invention is not limited thereto, as long as it is generally known in the art. There can be various modifications and improvements within the spirit of the technology of the present invention.

It is to be understood that the scope of the present invention is defined by the scope of the appended claims.

100‧‧‧Substrate processing unit

110‧‧‧ chamber

111‧‧‧ Cavity

120‧‧‧ body

130‧‧‧vacuum

131‧‧‧ Vacuum Generation Department

132‧‧‧vacuum pipeline

140‧‧‧heating department

150‧‧‧The Ministry of Cooling

Claims (10)

A substrate processing apparatus comprising: a chamber having a cavity formed therein; and a body formed in the cavity and capable of mounting a substrate and having a top surface in a direction opposite to the substrate a vacuum portion formed inside the body and adsorbing the substrate to a top surface portion of the body, and a heating portion formed inside the body to heat the substrate. The substrate processing apparatus according to claim 1, wherein the top surface of the body is formed in a concave shape. The substrate processing apparatus according to claim 1, wherein the top surface of the body is formed in a convex shape. The substrate processing apparatus according to claim 1, wherein the vacuum unit includes: a vacuum generating unit that generates the vacuum; and a vacuum line that is formed to penetrate the top surface of the body and the vacuum generating unit The substrate is bonded to the upper portion of the body. The substrate processing apparatus according to claim 1, wherein the heating unit is configured to heat the substrate to a glass transition temperature (Tg) of an insulating material or a solder resist. The substrate processing apparatus according to claim 1, further comprising: a cooling portion that is located in the cavity and cools the heated substrate. The substrate processing apparatus according to claim 6, wherein the cooling unit is separated from the body and formed around the body. The substrate processing apparatus according to claim 6, wherein the cooling unit cools the substrate by using a cooling gas. The substrate processing apparatus according to claim 8, wherein the cooling gas contains nitrogen or argon. The substrate processing apparatus according to claim 6, wherein the cooling unit is configured to cool the heated substrate to room temperature.