TW201349280A - 自動頻率調諧源和偏置射頻電源的電感耦合等離子處理室 - Google Patents

自動頻率調諧源和偏置射頻電源的電感耦合等離子處理室 Download PDF

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TW201349280A
TW201349280A TW101151245A TW101151245A TW201349280A TW 201349280 A TW201349280 A TW 201349280A TW 101151245 A TW101151245 A TW 101151245A TW 101151245 A TW101151245 A TW 101151245A TW 201349280 A TW201349280 A TW 201349280A
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source
power source
processing chamber
circuit
bias
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TW101151245A
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Chinese (zh)
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TWI484527B (https=
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wei-yi Lou
Songlin Xu
Tu-Qiang Ni
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Advanced Micro Fab Equip Inc
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  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
TW101151245A 2012-05-31 2012-12-28 自動頻率調諧源和偏置射頻電源的電感耦合等離子處理室 TW201349280A (zh)

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CN201210175897.2A CN103456591B (zh) 2012-05-31 2012-05-31 自动频率调谐源和偏置射频电源的电感耦合等离子处理室

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TWI647735B (zh) * 2013-03-15 2019-01-11 Lam Research Corporation 使用模型化以建立與電漿系統相關的離子能量
CN106298418B (zh) * 2015-05-18 2018-10-16 中微半导体设备(上海)有限公司 电感耦合等离子体处理系统及处理方法
CN106298419B (zh) * 2015-05-18 2018-10-16 中微半导体设备(上海)有限公司 电感耦合等离子体处理系统及处理方法
CN104849598B (zh) * 2015-05-25 2018-04-10 上海美诺福科技股份有限公司 一种射频发生器的控制电路与检测系统
US10347464B2 (en) * 2015-09-15 2019-07-09 Lam Research Corporation Cycle-averaged frequency tuning for low power voltage mode operation
TWI667487B (zh) * 2016-09-29 2019-08-01 美商超精細研究股份有限公司 射頻線圈調諧方法及裝置
CN110416047B (zh) 2018-04-27 2021-03-02 北京北方华创微电子装备有限公司 射频阻抗匹配的方法及装置、半导体处理设备
US11355325B2 (en) 2020-05-28 2022-06-07 Applied Materials, Inc. Methods and systems for monitoring input power for process control in semiconductor process systems
CN113065237B (zh) * 2021-03-19 2022-11-08 四川英杰电气股份有限公司 一种自动设置调频边界的方法和射频电源
CN114446758B (zh) * 2022-01-21 2024-04-12 北京北方华创微电子装备有限公司 半导体工艺腔室及半导体工艺方法
CN114724945A (zh) * 2022-05-18 2022-07-08 北京屹唐半导体科技股份有限公司 等离子体氮化掺杂方法和装置及半导体器件

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KR0170387B1 (ko) * 1989-10-03 1999-03-30 제임스 조셉 드롱 고주파 반도체 웨이퍼 가공장치 및 방법
US5688357A (en) * 1995-02-15 1997-11-18 Applied Materials, Inc. Automatic frequency tuning of an RF power source of an inductively coupled plasma reactor
TW200300649A (en) * 2001-11-27 2003-06-01 Alps Electric Co Ltd Plasma processing apparatus, its driving method, matching circuit design system, and plasma processing method
US20030192646A1 (en) * 2002-04-12 2003-10-16 Applied Materials, Inc. Plasma processing chamber having magnetic assembly and method
EP1689907A4 (en) * 2003-06-19 2008-07-23 Plasma Control Systems Llc METHOD AND DEVICE FOR PRODUCING PLASMA, AND RF ATTACK CIRCUIT WITH ADJUSTABLE USE FACTOR
JP5426811B2 (ja) * 2006-11-22 2014-02-26 パール工業株式会社 高周波電源装置
TW200903625A (en) * 2007-07-04 2009-01-16 Advanced Micro Fab Equip Inc Multi-station decoupled reactive ion etch chamber
KR101641130B1 (ko) * 2008-10-09 2016-07-20 어플라이드 머티어리얼스, 인코포레이티드 대형 플라즈마 처리 챔버를 위한 ｒｆ 복귀 경로
TWI416995B (zh) * 2009-08-17 2013-11-21 Advanced Micro Fab Equip Inc A plasma processing chamber having a switchable bias frequency, and a switchable matching network
CN102598876B (zh) * 2009-11-17 2018-05-04 应用材料公司 具有电极处rf匹配的大面积等离子体处理腔室
CN201962350U (zh) * 2010-11-09 2011-09-07 中微半导体设备(上海)有限公司 一种原位清洁第iii族元素和第v族元素化合物沉积反应腔的装置

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CN103456591A (zh) 2013-12-18
TWI484527B (https=) 2015-05-11
CN103456591B (zh) 2016-04-06

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